JP2018527742A - 光子を放射し検出するためのデバイスおよびそれを製造する方法 - Google Patents
光子を放射し検出するためのデバイスおよびそれを製造する方法 Download PDFInfo
- Publication number
- JP2018527742A JP2018527742A JP2017567242A JP2017567242A JP2018527742A JP 2018527742 A JP2018527742 A JP 2018527742A JP 2017567242 A JP2017567242 A JP 2017567242A JP 2017567242 A JP2017567242 A JP 2017567242A JP 2018527742 A JP2018527742 A JP 2018527742A
- Authority
- JP
- Japan
- Prior art keywords
- active material
- layer
- mode
- examples
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000011149 active material Substances 0.000 claims abstract description 84
- 230000006870 function Effects 0.000 claims abstract description 31
- 239000002096 quantum dot Substances 0.000 claims description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910021389 graphene Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 145
- 239000000463 material Substances 0.000 description 40
- 238000004590 computer program Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- -1 polyethylene Polymers 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 230000015654 memory Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- VBSAGAKIMFPMFV-UHFFFAOYSA-N 4h-dithieno[3,2-d:3',2'-e]pyrrole Chemical compound C1=CSC2=C1NC1=C2SC=C1 VBSAGAKIMFPMFV-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 2
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 2
- 206010052428 Wound Diseases 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 230000036772 blood pressure Effects 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001126 phototherapy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 description 1
- JRNVQLOKVMWBFR-UHFFFAOYSA-N 1,2-benzenedithiol Chemical compound SC1=CC=CC=C1S JRNVQLOKVMWBFR-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229920006169 Perfluoroelastomer Polymers 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 210000001736 capillary Anatomy 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 229920005560 fluorosilicone rubber Polymers 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 201000001441 melanoma Diseases 0.000 description 1
- 229920006343 melt-processible rubber Polymers 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- 229920006344 thermoplastic copolyester Polymers 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- 229920006342 thermoplastic vulcanizate Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229940035024 thioglycerol Drugs 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
- A61B5/0077—Devices for viewing the surface of the body, e.g. camera, magnifying lens
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02416—Detecting, measuring or recording pulse rate or heart rate using photoplethysmograph signals, e.g. generated by infrared radiation
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/74—Details of notification to user or communication with user or patient ; user input means
- A61B5/7475—User input or interface means, e.g. keyboard, pointing device, joystick
- A61B5/748—Selection of a region of interest, e.g. using a graphics tablet
- A61B5/7485—Automatic selection of region of interest
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0233—Special features of optical sensors or probes classified in A61B5/00
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2576/00—Medical imaging apparatus involving image processing or analysis
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16H—HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA
- G16H30/00—ICT specially adapted for the handling or processing of medical images
- G16H30/40—ICT specially adapted for the handling or processing of medical images for processing medical images, e.g. editing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Heart & Thoracic Surgery (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Biomedical Technology (AREA)
- Veterinary Medicine (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- Biophysics (AREA)
- Public Health (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Cardiology (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Physiology (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
(a)ハードウェアのみの回路実装(例えば、アナログおよび/またはデジタル回路だけでの実装)および
(b)回路およびソフトウェア(および/またはファームウェア)の組み合わせ、例えば(該当するとき):(i)1つまたは複数のプロセッサの組み合わせ、または(ii)1つまたは複数のプロセッサ/ソフトウェアの部分(協同して携帯電話もしくはサーバ等の装置に種々の機能を実行させる1つもしくは複数のデジタル信号処理装置、ソフトウェア、または1つもしくは複数のメモリを含む)および
(c)たとえそのソフトウェアまたはファームウェアが物理的に存在しなくても、動作するためにソフトウェアまたはファームウェアを必要とする回路、例えば1つもしくは複数のマイクロプロセッサまたは1つもしくは複数のマイクロプロセッサの部分。
"回路"のこの定義は、どの請求項における使用をも含めて本出願においてはこの用語のあらゆる使用に当てはまる。さらなる例として、本出願で使用されるとき、"回路"という用語は、単なる1つのプロセッサ(または複数のプロセッサ)もしくは1つのプロセッサの部分ならびにそれに(もしくは、それらに)付随するソフトウェアおよび/またはファームウェアの実装をも含むであろう。"回路"という用語は、例えば、特定の請求項要素に当てはまるならば、携帯電話用のベースバンド集積回路もしくはアプリケーション・プロセッサ集積回路、または、サーバ、セルラ・ネットワーク・デバイス、もしくは他のネットワーク・デバイス内の類似する集積回路をも含むであろう。
Claims (15)
- 半導電層と導電層との間に位置する活性材料を有する装置であって、
前記半導電層と前記導電層とは、第1動作モードにおいては前記活性材料が光子放射器として機能し第2動作モードにおいては前記活性材料が光子検出器として機能するように構成される、
装置。 - 前記第1動作モードにおいて前記半導電層と前記導電層との間に電場が加えられる、先行するいずれかの請求項に記載の装置。
- 前記第2動作モードにおいて前記半導電層が電界効果トランジスタ内にチャネルを提供するように前記半導電層はソース電極およびドレイン電極に接続される、先行するいずれかの請求項に記載の装置。
- 前記半導電層および前記導電層は、前記装置が第1時点で前記第1動作モードに設定され、第2の、異なる時点で前記第2動作モードに設定され得るように、構成される、先行するいずれかの請求項に記載の装置。
- 前記活性材料は量子ドットを有する、先行するいずれかの請求項に記載の装置。
- 前記半導電層はグラフェンを有し、前記グラフェンはグラフェン電界効果トランジスタを形成する、先行するいずれかの請求項に記載の装置。
- 誘電体層が前記活性材料と前記導電層との間に設けられる、先行するいずれかの請求項に記載の装置。
- 前記活性材料と前記半導電層との間に正孔輸送層が設けられる、先行するいずれかの請求項に記載の装置。
- 前記活性材料と前記導電層との間に電子輸送層が設けられる、先行するいずれかの請求項に記載の装置。
- 隣接する装置からの照明を妨げるように構成されたバリア、マイクロレンズ・アレイまたは光ファイバ・フェースプレートのうちの少なくとも1つを有する、先行するいずれかの請求項に記載の装置。
- 前記装置の動作モードを制御するように構成された制御回路を有する、先行するいずれかの請求項に記載の装置。
- 先行するいずれかの請求項に記載の複数の装置を有するアレイ。
- 前記複数の装置の第1サブセットは前記第1動作モードに設定され、前記複数の装置の第2サブセットは前記第2動作モードに設定される、請求項12に記載のアレイ。
- 少なくとも1つの装置は、異なる時点で異なるサブセット内に配置され得る、請求項13に記載のアレイ。
- 半導電層と導電層との間に活性材料を設けることと、
第1動作モードにおいては前記活性材料が光子放射器として機能し第2動作モードにおいては前記活性材料が光子検出器として機能するように前記半導電層および前記導電層を構成することと、
を有する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15173574.3A EP3109907B1 (en) | 2015-06-24 | 2015-06-24 | Device for emitting and detecting photons and method of producing the same |
EP15173574.3 | 2015-06-24 | ||
PCT/FI2016/050332 WO2016207483A1 (en) | 2015-06-24 | 2016-05-18 | Device for emitting and detecting photons and method of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018527742A true JP2018527742A (ja) | 2018-09-20 |
JP6595014B2 JP6595014B2 (ja) | 2019-10-23 |
Family
ID=53491302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017567242A Active JP6595014B2 (ja) | 2015-06-24 | 2016-05-18 | 光子を放射し検出するためのデバイスおよびそれを製造する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10347785B2 (ja) |
EP (1) | EP3109907B1 (ja) |
JP (1) | JP6595014B2 (ja) |
WO (1) | WO2016207483A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020121710A1 (ja) * | 2018-12-14 | 2020-06-18 | パナソニックIpマネジメント株式会社 | 光センサ |
JPWO2021002114A1 (ja) * | 2019-07-01 | 2021-01-07 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10454016B2 (en) * | 2017-05-19 | 2019-10-22 | Raytheon Bbn Technologies Corp. | Number-resolving photon detector with graphene-insulating-superconducting junction |
US11177411B2 (en) | 2017-10-26 | 2021-11-16 | Emberion Oy | Photosensitive field-effect transistor |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247193A (en) * | 1991-02-01 | 1993-09-21 | Olympus Optical Co., Ltd. | Semiconductor insulated gate device with four electrodes |
EP1840983A2 (en) * | 2006-03-31 | 2007-10-03 | Interuniversitair Microelektronica Centrum | Organic semiconductor photo-detecting device |
JP2010153793A (ja) * | 2008-11-26 | 2010-07-08 | Hitachi Ltd | グラフェン層が成長された基板およびそれを用いた電子・光集積回路装置 |
JP2011168473A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Ltd | グラフェン膜が成長された基板およびそれを用いた電子・光集積回路装置 |
JP2012138451A (ja) * | 2010-12-27 | 2012-07-19 | Hitachi Ltd | グラフェン膜と金属電極とが電気的接合した回路装置 |
JP2013129548A (ja) * | 2011-12-20 | 2013-07-04 | Nippon Telegr & Teleph Corp <Ntt> | ナノワイヤの作製方法 |
JP2014522117A (ja) * | 2011-08-02 | 2014-08-28 | フンダシオ インスティチュート デ サイエンセズ フォトニクス | 炭素系伝導体と量子ドットとを有するフォトトランジスタ |
US20140264275A1 (en) * | 2013-03-13 | 2014-09-18 | The Regents Of The University Of Michigan | Photodetectors based on double layer heterostructures |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391896A (en) * | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
US6987259B2 (en) | 2002-05-30 | 2006-01-17 | Dmetrix, Inc. | Imaging system with an integrated source and detector array |
KR20040076330A (ko) * | 2003-02-25 | 2004-09-01 | 삼성전자주식회사 | 실리콘 광소자 및 이를 적용한 광신호 입출력장치 |
GB0408960D0 (en) | 2004-04-22 | 2004-05-26 | Cambridge Display Tech Ltd | Displays, drivers and related methods |
US7598949B2 (en) | 2004-10-22 | 2009-10-06 | New York University | Multi-touch sensing light emitting diode display and method for using the same |
KR100836425B1 (ko) | 2007-02-05 | 2008-06-09 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 및 그 구동방법 |
US20100065834A1 (en) | 2008-09-16 | 2010-03-18 | Plextronics, Inc. | Integrated organic photovoltaic and light emitting diode device |
KR101594471B1 (ko) | 2009-02-10 | 2016-02-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
GB2473240A (en) | 2009-09-04 | 2011-03-09 | Cambridge Display Tech Ltd | A touch screen device using correlated emitter-detector pairs |
US8410474B2 (en) | 2010-01-21 | 2013-04-02 | Hitachi, Ltd. | Graphene grown substrate and electronic/photonic integrated circuits using same |
US8320423B2 (en) | 2010-08-24 | 2012-11-27 | Alvin Gabriel Stern | Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays |
KR101481000B1 (ko) * | 2013-05-13 | 2015-01-14 | 경희대학교 산학협력단 | 그래핀 양자점 광 검출기 및 이의 제조 방법 |
JP2014224904A (ja) | 2013-05-16 | 2014-12-04 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 電気光学装置およびその駆動方法 |
-
2015
- 2015-06-24 EP EP15173574.3A patent/EP3109907B1/en active Active
-
2016
- 2016-05-18 US US15/736,967 patent/US10347785B2/en active Active
- 2016-05-18 JP JP2017567242A patent/JP6595014B2/ja active Active
- 2016-05-18 WO PCT/FI2016/050332 patent/WO2016207483A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247193A (en) * | 1991-02-01 | 1993-09-21 | Olympus Optical Co., Ltd. | Semiconductor insulated gate device with four electrodes |
EP1840983A2 (en) * | 2006-03-31 | 2007-10-03 | Interuniversitair Microelektronica Centrum | Organic semiconductor photo-detecting device |
JP2010153793A (ja) * | 2008-11-26 | 2010-07-08 | Hitachi Ltd | グラフェン層が成長された基板およびそれを用いた電子・光集積回路装置 |
JP2011168473A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Ltd | グラフェン膜が成長された基板およびそれを用いた電子・光集積回路装置 |
JP2012138451A (ja) * | 2010-12-27 | 2012-07-19 | Hitachi Ltd | グラフェン膜と金属電極とが電気的接合した回路装置 |
JP2014522117A (ja) * | 2011-08-02 | 2014-08-28 | フンダシオ インスティチュート デ サイエンセズ フォトニクス | 炭素系伝導体と量子ドットとを有するフォトトランジスタ |
JP2013129548A (ja) * | 2011-12-20 | 2013-07-04 | Nippon Telegr & Teleph Corp <Ntt> | ナノワイヤの作製方法 |
US20140264275A1 (en) * | 2013-03-13 | 2014-09-18 | The Regents Of The University Of Michigan | Photodetectors based on double layer heterostructures |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020121710A1 (ja) * | 2018-12-14 | 2020-06-18 | パナソニックIpマネジメント株式会社 | 光センサ |
US11777050B2 (en) | 2018-12-14 | 2023-10-03 | Panasonic Intellectual Property Management Co., Ltd. | Optical sensor |
JPWO2021002114A1 (ja) * | 2019-07-01 | 2021-01-07 | ||
WO2021002114A1 (ja) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | 光検出素子、光検出素子の製造方法およびイメージセンサ |
JP7348283B2 (ja) | 2019-07-01 | 2023-09-20 | 富士フイルム株式会社 | 光検出素子、光検出素子の製造方法およびイメージセンサ |
Also Published As
Publication number | Publication date |
---|---|
EP3109907B1 (en) | 2023-08-23 |
EP3109907A1 (en) | 2016-12-28 |
US10347785B2 (en) | 2019-07-09 |
US20180190854A1 (en) | 2018-07-05 |
WO2016207483A1 (en) | 2016-12-29 |
JP6595014B2 (ja) | 2019-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6595014B2 (ja) | 光子を放射し検出するためのデバイスおよびそれを製造する方法 | |
Ouyang et al. | Photocurrent polarity controlled by light wavelength in self-powered ZnO nanowires/SnS photodetector system | |
US10374115B2 (en) | Microfluidic system and method for driving the same | |
US10311316B2 (en) | Apparatus, method and computer program for identifying biometric features | |
JP6532175B2 (ja) | 装置からの情報の読み取りを可能にする装置、方法、およびコンピュータプログラム | |
US11233098B2 (en) | Display array substrate, method for manufacturing the same and display including the same | |
JP2024103516A (ja) | 表示装置 | |
EP3410490A3 (en) | Display device | |
US20190051681A1 (en) | A quantum dot photodetector apparatus and associated methods | |
CA3005818C (en) | A quantum dot photodetector apparatus and associated methods | |
JPWO2020075009A5 (ja) | センサ装置 | |
Anabestani et al. | Advances in flexible organic photodetectors: Materials and applications | |
Bilgaiyan et al. | Enhancing small-molecule organic photodetector performance for reflectance-mode photoplethysmography sensor applications | |
Li et al. | Photo-triggered logic circuits assembled on integrated illuminants and resonant nanowires | |
KR20180018688A (ko) | 방사선 감지 디바이스 | |
Li et al. | Solution-processed organic–inorganic semiconductor heterostructures for advanced hybrid phototransistors | |
Prevot et al. | An all-organic active pixel photosensor featuring ion-gel transistors | |
Chen et al. | Artificial multisensory system with optical feedback for multimodal perceptual imaging | |
JP2019134030A (ja) | 光検出器 | |
US20240260340A1 (en) | Display apparatus and electronic device | |
Devnath et al. | Ultralow-Power Circuit and Sensing Applications Based on Subthermionic Threshold Switching Transistors | |
JP2023030471A (ja) | 検出装置 | |
KR20210066098A (ko) | 생체신호 감지 시스템 | |
JP2020058645A (ja) | Ct装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180216 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180216 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190909 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190925 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6595014 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |