JP2018207024A - Optical power generation element - Google Patents

Optical power generation element Download PDF

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Publication number
JP2018207024A
JP2018207024A JP2017113100A JP2017113100A JP2018207024A JP 2018207024 A JP2018207024 A JP 2018207024A JP 2017113100 A JP2017113100 A JP 2017113100A JP 2017113100 A JP2017113100 A JP 2017113100A JP 2018207024 A JP2018207024 A JP 2018207024A
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Japan
Prior art keywords
photoelectric conversion
conversion cell
layer
electrode
cell
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JP2017113100A
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Japanese (ja)
Inventor
岩崎 孝
Takashi Iwasaki
孝 岩崎
和正 鳥谷
Kazumasa Toritani
和正 鳥谷
充 稲垣
Makoto Inagaki
充 稲垣
斉藤 健司
Kenji Saito
健司 斉藤
義哉 安彦
Yoshiya Abiko
義哉 安彦
永井 陽一
Yoichi Nagai
陽一 永井
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住友電気工業株式会社
Sumitomo Electric Ind Ltd
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Priority to JP2017113100A priority Critical patent/JP2018207024A/en
Publication of JP2018207024A publication Critical patent/JP2018207024A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687Multiple junction or tandem solar cells

Abstract

A technique capable of suppressing a decrease in power generation efficiency is provided. A photovoltaic device including at least a first photoelectric conversion cell and a second photoelectric conversion cell, wherein the first photoelectric conversion cell and the second photoelectric conversion cell are: The first photoelectric conversion cell 11 and the second photoelectric conversion cell 12 are stacked via a first insulating layer 15 that insulates. [Selection] Figure 2

Description

  The present invention relates to a photovoltaic device.

In recent years, a multi-junction solar cell element in which a plurality of photoelectric conversion cells are stacked may be used as a photovoltaic element for a photovoltaic power generation apparatus.
This multi-junction solar cell element can absorb sunlight in a wide wavelength range by making the band gaps of the plurality of photoelectric conversion cells different, and high power generation efficiency is realized.
For example, Patent Document 1 discloses a three-junction solar cell element in which a Ge cell, a GaAs cell, and an AlInGaP cell are joined by a tunnel junction layer.

JP 2005-136333 A

In the multi-junction type solar cell element, each cell is bonded and laminated by a tunnel junction layer, and power is supplied from a surface electrode provided on the surface of the solar cell element and a back electrode provided on the back surface of the solar cell element. Are output, and each cell is connected in series.
Therefore, the current value output by the multi-junction solar cell element is limited to the smallest current value among the current values output by each cell.
For this reason, the multi-junction solar cell element is designed so that there is as little difference as possible in the current output by each cell.

Here, the sunlight that reaches the solar cell element increases or decreases due to changes in the surrounding environment such as changes in solar altitude due to time and season, atmospheric conditions, and the presence of aerosols. For this reason, the current output from each cell varies depending on changes in the surrounding environment.
At this time, the components in the short wavelength region among the components contained in the sunlight are greatly affected by changes in the surrounding environment, and therefore, relative to the components in other wavelength regions before reaching the solar cell element. May decrease significantly.

For this reason, in each cell that mainly absorbs components in the short wavelength region, the amount of decrease in current value due to changes in the surrounding environment is relatively greater than the amount of decrease in current value of other cells.
Therefore, the difference between the currents output by each cell increases, and the power generation efficiency of the entire multi-junction solar cell element may decrease.

  As described above, in the conventional multi-junction photovoltaic device, each cell is connected in series, so that the current value of the entire photovoltaic device is the smallest current value among the current values output by each cell. Therefore, power generation efficiency may be reduced due to environmental changes.

  This invention is made | formed in view of such a situation, and it aims at provision of the photovoltaic device which can suppress the fall of electric power generation efficiency.

  The photovoltaic device which is one embodiment is a photovoltaic device including at least a first photoelectric conversion cell and a second photoelectric conversion cell, wherein the first photoelectric conversion cell, the second photoelectric conversion cell, Are stacked via an insulating layer that insulates the first photoelectric conversion cell from the second photoelectric conversion cell.

  According to the present invention, it is possible to suppress a decrease in power generation efficiency.

FIG. 1 is a plan view of the photovoltaic device according to the first embodiment. FIG. 2 is a diagram illustrating a part of a cross section taken along line II-II in FIG. 1. FIG. 3A is a diagram for explaining a method for manufacturing a photovoltaic device, and is a partial cross-sectional view of a Ge substrate used for the photovoltaic device 1, and FIG. 3B is a diagram in which each semiconductor layer is formed. FIG. 3C is a partial cross-sectional view of the first stacked body after etching. Fig.4 (a) is a figure for demonstrating the other manufacturing method of a photovoltaic device, Comprising: Partial sectional drawing of the laminated body corresponding to each photoelectric conversion cell, FIG.4 (b) is each laminated body. It is a partial sectional view of the 1st layered product obtained by joining. FIG. 5 is a plan view of the photovoltaic device according to the second embodiment. FIG. 6 is a diagram showing a part of a cross section taken along line VI-VI in FIG.

[Description of Embodiment]
First, the contents of the embodiment will be listed and described.
(1) A photovoltaic device according to an embodiment is a photovoltaic device including at least a first photoelectric conversion cell and a second photoelectric conversion cell, wherein the first photoelectric conversion cell and the second photoelectric conversion cell are included. The conversion cell is laminated through an insulating layer that insulates the first photoelectric conversion cell and the second photoelectric conversion cell.

According to the photovoltaic device having the above configuration, since the first photoelectric conversion cell and the second photoelectric conversion cell are stacked via the insulating layer, the first photoelectric conversion cell and the second photoelectric conversion cell are independently photovoltaic. It can be used as an element.
As a result, the first photoelectric conversion cell and the second photoelectric conversion cell can be connected in parallel, or can be connected to independent paths. Thereby, it is possible to output current in an optimal state for each cell. As a result, it is possible to suppress a decrease in power generation efficiency as a whole photovoltaic power generation element.

(2) In the photovoltaic device, it is preferable that a p-side electrode and an n-side electrode are provided in each of the first photoelectric conversion cell and the second photoelectric conversion cell.
In this case, a 1st photoelectric conversion cell and a 2nd photoelectric conversion cell can also be connected in parallel, and can also be connected to a mutually independent path | route.

(3) In the photovoltaic device, between the one of the first photoelectric conversion cell and the second photoelectric conversion cell and the insulating layer, either the p-side electrode or the n-side electrode It is preferable that an electrode layer constituting either of them is provided.
Thereby, even if a 1st photoelectric conversion cell and a 2nd photoelectric conversion cell are laminated | stacked through an insulating layer, an electrode can be provided with respect to one photoelectric conversion cell.

(4) In the photovoltaic device, the insulating layer may be a non-doped layer.
In this case, an insulating layer can be easily provided between the first photoelectric conversion cell and the second photoelectric conversion cell.

(5) In the photovoltaic device, at least one of the first photoelectric conversion cell and the second photoelectric conversion cell may be configured by joining a plurality of subcells.
In this case, the freedom degree of the combination of a photoelectric conversion cell can be raised.

(6) In the photovoltaic device, at least one of the first photoelectric conversion cell and the second photoelectric conversion cell may be made of a compound semiconductor.
In this case, one of the photoelectric conversion cells can be formed together with the insulating layer by a vapor deposition method or the like, and the manufacture becomes easy.

[Details of the embodiment]
Hereinafter, preferred embodiments will be described with reference to the drawings.
Note that at least a part of each embodiment described below may be arbitrarily combined.

[About the first embodiment]
FIG. 1 is a plan view of the photovoltaic device according to the first embodiment, and FIG. 2 is a diagram showing a part of the section taken along the line II-II in FIG. Is shown.
The photovoltaic device 1 is an element that generates electricity by photoelectric conversion by receiving light such as sunlight. As shown in FIG. 1, the photovoltaic device 1 has a rectangular shape in plan view.
As shown in FIG. 2, the photovoltaic element 1 is configured by stacking a first photoelectric conversion cell 11, a second photoelectric conversion cell 12, and a third photoelectric conversion cell 13. At the end of the photovoltaic device 1, a step is formed by the end of each photoelectric conversion cell 11, 12, 13.
Here, the photoelectric conversion cell is a semiconductor layer that includes a pn junction and generates power by photoelectric conversion based on incident light.

A first insulating layer 15 is interposed between the first photoelectric conversion cell 11 and the second photoelectric conversion cell 12.
Further, a second insulating layer 16 is interposed between the second photoelectric conversion cell 12 and the third photoelectric conversion cell 13.
In FIG. 2, the light incident direction is a direction from the upper direction to the lower direction in the drawing, and in the following description, in each layer, the light incident side surface is referred to as the front surface and the opposite surface is referred to as the rear surface.

The first photoelectric conversion cell 11 includes a p-type Ge layer provided on the back surface side and an n-type Ge layer provided on the p-type Ge layer and pn-junctioned with the p-type Ge layer.
The thickness of the first photoelectric conversion cell 11 is, for example, about 100 μm to 200 μm.
The 1st photoelectric conversion cell 11 is laminated | stacked on the surface of the 1st electrode 21 formed in the layer form. The first electrode 21 is made of, for example, an AuGeNi alloy.
The surface of the first photoelectric conversion cell 11 includes a laminated surface 23 on which the first insulating layer 15 is laminated and an exposed surface 24 exposed in the light incident direction.

As shown in FIG. 1, the exposed surface 24 is provided on both edges along two sides parallel to each other on the surface of the first photoelectric conversion cell 11.
A second electrode 25 is provided on the exposed surface 24. The second electrode 25 is formed on the exposed surfaces 24 on both sides, and is formed linearly along the longitudinal direction of the exposed surface 24. The second electrode 25 is made of, for example, an AuGeNi alloy.
The second electrode 25 forms an n-side electrode of the first photoelectric conversion cell 11 by being provided on the exposed surface 24 of the first photoelectric conversion cell 11.
Moreover, the 1st electrode 21 comprises the p side electrode of the 1st photoelectric conversion cell 11 by laminating | stacking the 1st photoelectric conversion cell 11 on the surface.

  The second photoelectric conversion cell 12 is stacked on the surface of the first electrode layer 31 stacked on the surface of the first insulating layer 15. That is, the first electrode layer 31 is stacked between the second photoelectric conversion cell 12 and the first insulating layer 15. Therefore, the first insulating layer 15 and the first electrode layer 31 are interposed between the second photoelectric conversion cell 12 and the first photoelectric conversion cell 11.

The first electrode layer 31 is a semiconductor layer, and is composed of, for example, a p-type InGaAsP layer doped with Zn at a high concentration of about 10 19 to 10 20 cm −3 .
Since the first electrode layer 31 is doped at a high concentration, the incident light may be attenuated. For this reason, it is preferable that the thickness of the 1st electrode layer 31 is 0.1 micrometer or less. Thereby, attenuation of incident light by the first electrode layer 31 can be suppressed.

The surface of the first electrode layer 31 includes a stacked surface 33 on which the second photoelectric conversion cells 12 are stacked and an exposed surface 34 exposed in the light incident direction.
As shown in FIG. 1, the exposed surface 34 is provided on both edges of the two sides along the exposed surface 24 on the surface of the first electrode layer 31.
A third electrode 35 is provided on the exposed surface 34. The third electrode 35 is formed on the exposed surfaces 34 on both sides, and is formed linearly along the longitudinal direction of the exposed surface 34. The third electrode 35 is made of, for example, an AuGeNi alloy.

The second photoelectric conversion cell 12 includes a p-type InGaAs layer provided on the surface of the first electrode layer 31, and an n-type InGaAs layer provided on the p-type InGaAs layer and pn-junctioned with the p-type InGaAs layer. . That is, the second photoelectric conversion cell 12 constitutes a photoelectric conversion cell made of a compound semiconductor using InGaAs.
The thickness of the second photoelectric conversion cell 12 is, for example, about 2 μm to 5 μm.
The surface of the second photoelectric conversion cell 12 includes a stacked surface 36 on which the second insulating layer 16 is stacked and an exposed surface 37 exposed in the light incident direction.
As shown in FIG. 1, the exposed surface 37 is provided on both edges of the two sides along the exposed surface 34 on the surface of the second photoelectric conversion cell 12.
A fourth electrode 38 is provided on the exposed surface 37. The fourth electrode 38 is formed on the exposed surfaces 37 on both sides, and is formed in a linear shape along the longitudinal direction of the exposed surface 37. The fourth electrode 38 is made of, for example, an AuGeNi alloy.

The fourth electrode 38 forms an n-side electrode of the second photoelectric conversion cell 12 by being provided on the exposed surface 37 of the second photoelectric conversion cell 12.
The first electrode layer 31 constitutes a p-type semiconductor layer in a state where the second photoelectric conversion cell 12 is laminated on the surface thereof. Therefore, the first electrode layer 31 and the third electrode 35 constitute a p-side electrode of the second photoelectric conversion cell 12.

  Thus, in this embodiment, since the 1st electrode layer 31 is provided between the 2nd photoelectric conversion cell 12 and the 1st insulating layer 15, the 1st photoelectric conversion cell 11 and the 2nd photoelectric conversion are provided. Even if the cell 12 is stacked via the first insulating layer 15, a p-side electrode can be provided for the second photoelectric conversion cell 12.

  The third photoelectric conversion cell 13 is stacked on the surface of the second electrode layer 41 stacked on the surface of the second insulating layer 16. That is, the second electrode layer 41 is stacked between the third photoelectric conversion cell 13 and the second insulating layer 16. Therefore, the second insulating layer 16 and the second electrode layer 41 are interposed between the third photoelectric conversion cell 13 and the second photoelectric conversion cell 12.

The second electrode layer 41 is a semiconductor layer, and is composed of a p-type InGaAsP layer doped with Zn at a high concentration of about 10 19 to 10 20 cm −3 , for example, like the first electrode layer 31. Yes.
Similarly to the first electrode layer 31, the second electrode layer 41 is also doped at a high concentration, so that there is a possibility that incident light may be attenuated. For this reason, it is preferable that the thickness of the 2nd electrode layer 41 is 0.1 micrometer or less. Thereby, attenuation of incident light by the first electrode layer 31 can be suppressed.

The surface of the second electrode layer 41 includes a stacked surface 43 on which the third photoelectric conversion cells 13 are stacked and an exposed surface 44 exposed in the light incident direction.
As shown in FIG. 1, the exposed surface 44 is provided on both edges of the two sides along the exposed surface 37 on the surface of the second electrode layer 41.
A fifth electrode 45 is provided on the exposed surface 44. The fifth electrode 45 is formed on the exposed surfaces 44 on both sides, and is formed linearly along the longitudinal direction of the exposed surface 44. The fifth electrode 45 is made of, for example, an AuGeNi alloy.

The third photoelectric conversion cell 13 includes a p-type InGaP layer provided on the surface of the second electrode layer 41, and an n-type InGaP layer provided on the p-type InGaP layer and pn-junctioned with the p-type InGaP layer. . That is, the third photoelectric conversion cell 13 constitutes a photoelectric conversion cell made of a compound semiconductor using InGaP.
The thickness of the third photoelectric conversion cell 13 is, for example, about 2 μm to 5 μm.
A sixth electrode 46 is provided on the surface 47 of the third photoelectric conversion cell 13. The sixth electrode 46 includes a plurality of linear electrode portions that extend in parallel to two sides along the exposed surfaces 44 on both sides and are arranged on the surface 47 at a predetermined interval. The sixth electrode 46 is made of, for example, an AuGeNi alloy.

The sixth electrode 46 constitutes the n-side electrode of the third photoelectric conversion cell 13 by being provided on the surface 47 of the third photoelectric conversion cell 13.
The second electrode layer 41 constitutes a p-type semiconductor layer in a state where the third photoelectric conversion cell 13 is laminated on the surface thereof. Therefore, the second electrode layer 41 and the fifth electrode 45 constitute a p-side electrode of the third photoelectric conversion cell 13.

  Thus, in this embodiment, since the 2nd electrode layer 41 is provided between the 3rd photoelectric conversion cell 13 and the 2nd insulating layer 16, the 2nd photoelectric conversion cell 12 and the 3rd photoelectric conversion are provided. Even if the cell 13 is stacked via the second insulating layer 16, a p-side electrode can be provided for the third photoelectric conversion cell 13.

The first insulating layer 15 is a semiconductor layer and is composed of a non-doped (not including dopant) InGaAs layer. Note that non-doped means that the semiconductor layer was formed without intentionally adding a dopant. For example, the non-doped InGaAs layer has a thickness of 0.01 μm to 0.2 μm and a dopant concentration of about 10 14 cm −3 . Thereby, the first insulating layer 15 insulates between the first photoelectric conversion cell 11 and the first electrode layer 31 of the second photoelectric conversion cell 12.

The second insulating layer 16 is a semiconductor layer and is composed of a non-doped (not including dopant) InGaP layer. Similarly to the first insulating layer 15, the non-doped InGaP layer has a thickness of 0.01 μm to 0.2 μm and a dopant concentration of about 10 14 cm −3 . Thereby, the second insulating layer 16 insulates between the second photoelectric conversion cell 12 and the second electrode layer 41 of the third photoelectric conversion cell 13.

  In the photovoltaic device 1 of the present embodiment, the first photoelectric conversion cell 11 and the second photoelectric conversion cell 12 are stacked via the first insulating layer 15. Further, the second photoelectric conversion cell 12 and the third photoelectric conversion cell 13 are stacked via the second insulating layer 16. Therefore, each of the first photoelectric conversion cell 11, the second photoelectric conversion cell 12, and the third photoelectric conversion cell 13 can be used as an independent photovoltaic device.

Furthermore, in the photovoltaic device 1, each of the photoelectric conversion cells 11, 12, and 13 is provided with a p-side electrode and an n-side electrode.
Therefore, the first photoelectric conversion cell 11 can output the current generated from the first electrode 21 and the second electrode 25. Further, the second photoelectric conversion cell 12 can output a current generated from the third electrode 35 and the fourth electrode 38. Further, the third photoelectric conversion cell 13 can output a current generated from the fifth electrode 45 and the sixth electrode 46.

As a result, the first photoelectric conversion cell 11, the second photoelectric conversion cell 12, and the third photoelectric conversion cell 13 can be connected in parallel to each other.
In addition, as shown in FIG. 2, inverters I1, I2, and I3 are prepared for the photoelectric conversion cells 11, 12, and 13, respectively, and the photoelectric conversion cells 11, 12, and 13 are connected to independent paths to supply current. Can be output.

  Thus, in this embodiment, each photoelectric conversion cell 11, 12, 13 can be used as an independent photovoltaic device, and a current is output in an optimal state for each photoelectric conversion cell 11, 12, 13. be able to. As a result, it is possible to suppress a decrease in power generation efficiency as a whole of the photovoltaic device 1.

  Moreover, in this embodiment, since the 2nd photoelectric conversion cell 12 and the 3rd photoelectric conversion cell 13 consist of compound semiconductors, the 2nd photoelectric conversion cell 12 and the 3rd photoelectric conversion cell 13 are insulated so that it may mention later. It can be formed together with the layers 15 and 16 by vapor phase epitaxy and is easy to manufacture.

In the photovoltaic device 1 of the present embodiment, the first insulating layer 15, the first electrode layer 31, the second insulating layer 16, and the second insulating layer 16 are provided between the photoelectric conversion cells 11, 12, and 13. Since it is interposed, attenuation of incident light can be considered.
However, since the first insulating layer 15 and the second insulating layer 16 are non-doped, the light transmittance is higher than that of the semiconductor layer doped. For this reason, incident light is not greatly attenuated.
The first electrode layer 31 and the second insulating layer 16 can suppress the attenuation of incident light by setting the thickness to 0.1 μm or less.
As described above, the photovoltaic device 1 according to this embodiment can suppress the attenuation of incident light due to the insulating layers 15 and 16 and the electrode layers 31 and 41 provided.

Next, a method for manufacturing the photovoltaic device 1 according to this embodiment will be described.
FIG. 3A is a diagram for explaining a method for manufacturing the photovoltaic device 1, and is a partial cross-sectional view of a Ge substrate used for the photovoltaic device 1. In FIG. 3A, the right side of the drawing shows the end of the Ge substrate.
First, as shown in FIG. 3A, a Ge substrate 52 having an AuGeNi alloy layer 51 laminated on the back surface is prepared. The Ge substrate 52 is previously configured to include a p-type Ge layer on the back surface side and an n-type Ge layer on the front surface side.

  Each semiconductor layer is sequentially stacked on the surface of the Ge substrate 52 by a metal organic chemical vapor deposition method using MOCVD (Metal Organic Chemical Vapor Deposition).

FIG. 3B is a partial cross-sectional view of the first stacked body in which each semiconductor layer is formed. In FIG. 3B, the right side of the drawing shows the end of the Ge substrate (first stacked body).
On the Ge substrate 52 to be the first photoelectric conversion cell 11, a non-doped InGaAs layer that is the first insulating layer 15, a p-type InGaAsP layer that is the first electrode layer 31, and an InGaAs layer that is the second photoelectric conversion cell 12. (P-type InGaAs layer and n-type InGaAs layer), a non-doped InGaP layer that is the second insulating layer 16, a p-type InGaAsP layer that is the second electrode layer 41, and an InGaP layer that is the third photoelectric conversion cell 13 (p Type InGaP layer and n-type InGaP layer) are sequentially laminated.

In this manner, by forming each semiconductor layer on the surface of the Ge substrate 52, the first stacked body 55 in which the respective semiconductor layers are stacked is obtained.
Next, etching is performed on each layer of the first stacked body 55 to form exposed surfaces 24, 34, 37, and 44 at end portions of the respective layers.

FIG. 3C is a partial cross-sectional view of the first stacked body 55 after etching. In FIG. 3C, the right side of the drawing shows the end of the first stacked body 55.
As shown in FIG. 3C, the exposed first layer 55 is formed with an exposed surface 24 on the surface of the first photoelectric conversion cell 11 and an exposed surface 34 on the surface of the first electrode layer 31. The exposed surface 37 is formed on the surface of the second photoelectric conversion cell 12, and the exposed surface 44 is formed on the surface of the second electrode layer 41.

At this time, if the first electrode layer 31 and the second electrode layer 41 are InGaAsP layers, they can function as an etching stop layer. That is, the etching rate can be adjusted by adjusting the ratio of P, and the first electrode layer 31 and the second electrode layer 41 that are InGaAsP layers can be used as the etching stop layer.
Thereby, the 1st electrode layer 31 and the 2nd electrode layer 41 of this embodiment can be functioned as an etching stop layer while functioning as an electrode.

After the exposed surfaces 24, 34, 37, 44 are formed by etching, the second electrode 25, the third electrode 35, the fourth electrode 38, the fifth electrode 45, and the sixth electrode 46 are formed by vapor deposition or the like. .
As described above, the photovoltaic element 1 of this embodiment can be manufactured.

Moreover, the photovoltaic device 1 of this embodiment can also be manufactured by the following method.
That is, the first photoelectric conversion cell 11, the second photoelectric conversion cell 12, and the third photoelectric conversion cell 13 can be individually formed and manufactured by joining them.

  Fig.4 (a) is a figure for demonstrating the other manufacturing method of the photovoltaic device 1, Comprising: It is a partial cross section figure of the laminated body corresponding to each photoelectric conversion cell.

In FIG. 4A, the second stacked body 57 corresponding to the first photoelectric conversion cell 11 includes an AuGeNi alloy layer 61 that becomes the first electrode 21 and a Ge substrate 62 that becomes the first photoelectric conversion cell 11. It is configured. The Ge substrate 62 includes a p-type Ge layer and an n-type Ge layer.
The third stacked body 58 corresponding to the second photoelectric conversion cell 12 includes a non-doped InGaAs layer 71 to be the first insulating layer 15, a p-type InGaAsP layer 72 to be the first electrode layer 31, the second photoelectric conversion cell 12, and The InGaAs layer 73 is formed. The InGaAs layer 73 includes a p-type InGaAs layer and an n-type InGaAs layer.
The fourth stacked body 59 corresponding to the third photoelectric conversion cell 13 includes a non-doped InGaP layer 81 serving as the second insulating layer 16, a p-type InGaAsP layer 82 serving as the second electrode layer 41, and the third photoelectric conversion cell 13. The InGaP layer 83 is formed. The InGaP layer 83 includes a p-type InGaP layer and an n-type InGaP layer.

  The stacked bodies 58 and 59 can be formed by sequentially stacking each semiconductor layer by a metal organic chemical vapor deposition method or the like, similarly to the method described above.

Next, annealing is performed in a state where these stacked bodies 57, 58, and 59 are stacked, thereby bonding the stacked bodies 57, 58, and 59 to each other.
By this. As shown in FIG. 4B, a first stacked body 55 in which the respective semiconductor layers are stacked is obtained.
Thereafter, the photovoltaic element 1 can be obtained by the same method as the manufacturing method shown in FIG.

  As described above, the photovoltaic device 1 of the present embodiment is also manufactured by individually forming the first photoelectric conversion cell 11, the second photoelectric conversion cell 12, and the third photoelectric conversion cell 13, and joining them. can do.

[About the second embodiment]
FIG. 5 is a plan view of the end portion of the photovoltaic device according to the second embodiment, and FIG. 6 is a diagram showing a part of a cross section taken along line VI-VI in FIG. The cross section is shown.
In the present embodiment, as shown in FIG. 6, the first photoelectric conversion cell 111 and the second photoelectric conversion cell 112 that are two photoelectric conversion cells are stacked, and the first photoelectric conversion cell 111 is the first photoelectric conversion cell. The second embodiment is different from the first embodiment in that the subcell 122 and the second subcell 129 are configured.

In FIG. 6, an insulating layer 115 is interposed between the first photoelectric conversion cell 111 and the second photoelectric conversion cell 112.
Similar to the first embodiment, this photovoltaic element 1 is also rectangular in plan view, and at its end, a step is formed by the ends of the photoelectric conversion cells 111 and 112 as shown in FIG. ing.

The first photoelectric conversion cell 111 includes a first subcell 122 provided on the back surface side, a second subcell 129 stacked on the first subcell 122, and a tunnel junction layer 128 that joins both the subcells 122 and 129. .
The 1st photoelectric conversion cell 111 is laminated | stacked on the surface of the 1st electrode 121 formed in the layer form. The first electrode 121 is made of, for example, an AuGeNi alloy.

The first subcell 122 includes a p-type Ge layer provided on the back surface side, and an n-type Ge layer provided on the p-type Ge layer and pn-junctioned with the p-type Ge layer.
The second subcell 129 includes a p-type InGaAs layer provided on the back surface side, and an n-type InGaAs layer provided on the p-type InGaAs layer and pn-junctioned with the p-type InGaAs layer.
The tunnel junction layer 128 is interposed and joined between the first subcell 122 and the second subcell 129. Tunnel junction layer 128 includes an n-type InGaAs layer provided on the first subcell 122 side and a p-type InGaAs layer provided on the second subcell 129 side.

The surface of the first photoelectric conversion cell 111 includes a laminated surface 123 on which the insulating layer 115 is laminated and an exposed surface 124 exposed in the light incident direction.
As shown in FIG. 5, the exposed surface 124 is provided on both edges along two sides parallel to each other on the surface of the first photoelectric conversion cell 111.
A second electrode 125 is provided on the exposed surface 124. The second electrode 125 is formed on the exposed surfaces 124 on both sides, and is formed in a linear shape along the longitudinal direction of the exposed surface 124. The second electrode 125 is made of, for example, an AuGeNi alloy.
The second electrode 125 constitutes an n-side electrode of the first photoelectric conversion cell 111 by being provided on the exposed surface 124 of the first photoelectric conversion cell 111.
Moreover, the 1st electrode 121 comprises the p side electrode of the 1st photoelectric conversion cell 111 by laminating | stacking the 1st photoelectric conversion cell 111 on the surface.

  The second photoelectric conversion cell 112 is stacked on the surface of the first electrode layer 131 stacked on the surface of the insulating layer 115. That is, the second photoelectric conversion cell 112 and the first photoelectric conversion cell 111 are stacked with the insulating layer 115 and the first electrode layer 131 interposed therebetween.

The first electrode layer 131 is composed of a p-type InGaAsP layer doped at a high concentration. The first electrode layer 131 has the same configuration as the first electrode layer 31 of the first embodiment.
The surface of the first electrode layer 131 includes a stacked surface 133 on which the second photoelectric conversion cells 112 are stacked, and an exposed surface 134 exposed in the light incident direction.
As shown in FIG. 5, the exposed surface 134 is provided on both edges of the two sides along the exposed surface 124 on the surface of the first electrode layer 131.
A third electrode 135 is provided on the exposed surface 134. The third electrode 135 is formed on the exposed surfaces 134 on both sides, and is formed in a linear shape along the longitudinal direction of the exposed surface 134. The third electrode 135 is made of, for example, an AuGeNi alloy.

The second photoelectric conversion cell 112 includes a p-type InGaP layer provided on the surface of the first electrode layer 131, and an n-type InGaP layer provided on the p-type InGaP layer and pn-junctioned with the p-type InGaP layer. .
A fourth electrode 138 is provided on the surface 139 of the second photoelectric conversion cell 112. The fourth electrode 138 includes a plurality of linear electrode portions that extend parallel to two sides along the exposed surfaces 134 on both sides and are arranged on the surface 139 at a predetermined interval. The fourth electrode 138 is made of, for example, an AuGeNi alloy.

The fourth electrode 138 forms the n-side electrode of the second photoelectric conversion cell 112 by being provided on the surface 139 of the second photoelectric conversion cell 112.
The first electrode layer 131 forms a p-type semiconductor layer with the second photoelectric conversion cell 112 stacked on the surface thereof. Therefore, the first electrode layer 131 and the third electrode 135 constitute a p-side electrode of the second photoelectric conversion cell 112.

  The insulating layer 115 is composed of a non-doped InGaP layer. Thereby, the first insulating layer 15 insulates between the first photoelectric conversion cell 11 and the first electrode layer 31 of the second photoelectric conversion cell 12. The insulating layer 115 has the same configuration as the first insulating layer 15 and the second insulating layer 16 of the first embodiment.

  Also in the photovoltaic device 1 of this embodiment, the 1st photoelectric conversion cell 111 and the 2nd photoelectric conversion cell 112 are laminated | stacked through the insulating layer 115 similarly to 1st Embodiment. Therefore, each of the first photoelectric conversion cell 111 and the second photoelectric conversion cell 112 can be used as an independent photovoltaic device.

  Moreover, in this embodiment, since the 1st photoelectric conversion cell 11 was comprised by the 1st subcell 122 and the 2nd subcell 129, the freedom degree of the combination of a photoelectric conversion cell can be raised.

  In addition, the manufacturing method of this embodiment can be manufactured by the method similar to the manufacturing method of 1st Embodiment.

[Others]
The embodiment disclosed this time should be considered as illustrative in all points and not restrictive.
In each of the embodiments described above, the case where three photoelectric conversion cells are used has been described. However, the photovoltaic device 1 may be configured by two photoelectric conversion cells, or photovoltaic power generation using four or more photoelectric conversion cells. The element 1 may be configured.

  Further, in each of the above embodiments, the insulating layers 15, 16, and 115 are exemplified by a non-doped semiconductor layer (InGaAs layer or InGaP layer). However, the present invention is not limited to this. The composition of the insulating layer can be appropriately set according to the composition of the adjacent semiconductor layer. For example, in the first embodiment, the second insulating layer 16 is composed of a non-doped InGaP layer, but may be composed of an InGaAs layer having the same composition as that of the second photoelectric conversion cell 12 adjacent to the second insulating layer 16. .

  Further, in each of the above embodiments, the case where a semiconductor layer that is non-doped is used as the insulating layer is exemplified, but the insulating layer only needs to be able to insulate the photoelectric conversion cells on both sides, for example, Fe The insulating layer can also be constituted by a doped semiconductor layer.

  In each of the above embodiments, the case where a Ge cell using a Ge layer, an InGaAs cell using an InGaAs layer, or an InGaP cell using an InGaP layer is used as the photoelectric conversion cell. However, the present invention is not limited to this. A photoelectric conversion cell made of a semiconductor material can also be used.

  In each of the above embodiments, the electrode layers 31, 41 and 131 are exemplified by the semiconductor layer (InGaAsP layer) doped at a high concentration. For example, the electrode layer is formed of a metal such as an AuGeNi alloy. Also good.

  The scope of the present invention is defined by the terms of the claims, rather than the meanings described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

DESCRIPTION OF SYMBOLS 1 Photoelectric power generation element 11 1st photoelectric conversion cell 12 2nd photoelectric conversion cell 13 3rd photoelectric conversion cell 15 1st insulating layer 16 2nd insulating layer 21 1st electrode 23 Laminated surface 24 Exposed surface 25 2nd electrode 31 1st electrode Layer 33 Laminated surface 34 Exposed surface 35 Third electrode 36 Laminated surface 37 Exposed surface 38 Fourth electrode 41 Second electrode layer 43 Laminated surface 44 Exposed surface 45 Fifth electrode 46 Sixth electrode 47 Surface 51 AuGeNi alloy layer 52 Ge substrate 55 First laminated body 57 Second laminated body 58 Third laminated body 59 Fourth laminated body 61 AuGeNi alloy layer 62 Ge substrate 111 First photoelectric conversion cell 112 Second photoelectric conversion cell 115 Insulating layer 121 First electrode 122 First subcell 123 Laminated surface 124 Exposed surface 125 Second electrode 128 Tunnel junction layer 129 Second subcell 131 First electrode layer 133 Laminated surface 13 Exposed surface 135 third electrode 138 fourth electrode 139 surface I1, I2, I3 inverter

Claims (6)

  1. A photovoltaic device including at least a first photoelectric conversion cell and a second photoelectric conversion cell,
    The first photoelectric conversion cell and the second photoelectric conversion cell are photovoltaic elements that are stacked via an insulating layer that insulates the first photoelectric conversion cell and the second photoelectric conversion cell.
  2. The photovoltaic device according to claim 1, wherein a p-side electrode and an n-side electrode are provided in each of the first photoelectric conversion cell and the second photoelectric conversion cell.
  3. An electrode layer constituting either the p-side electrode or the n-side electrode is provided between any one of the first photoelectric conversion cell and the second photoelectric conversion cell and the insulating layer. The photovoltaic device according to claim 2.
  4. The photovoltaic device according to any one of claims 1 to 3, wherein the insulating layer is a non-doped layer.
  5. 5. The photovoltaic power generation according to claim 1, wherein at least one of the first photoelectric conversion cell and the second photoelectric conversion cell is configured by joining a plurality of subcells. 6. element.
  6. 6. The photovoltaic device according to claim 1, wherein at least one of the first photoelectric conversion cell and the second photoelectric conversion cell is made of a compound semiconductor.

JP2017113100A 2017-06-08 2017-06-08 Optical power generation element Pending JP2018207024A (en)

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US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US20120180854A1 (en) * 2011-01-18 2012-07-19 Bellanger Mathieu Mechanical stacking structure for multi-junction photovoltaic devices and method of making
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