JP2018201061A - Solid state image sensor - Google Patents

Abstract

To inhibit generation of ghost in a solid state image sensor including an on-chip lens.SOLUTION: A solid state image sensor includes multiple first lenses, multiple second lenses, and multiple photoelectric conversion parts. The multiple first lenses are placed on the upper surface of multiple pixels arranged two-dimensionally. The multiple second lenses have sizes different from those of the multiple first lenses. The multiple second lenses are placed below the multiple first lenses. More than one of the multiple second lenses are arranged for each of the multiple pixels. The multiple photoelectric conversion parts are arranged for each of the multiple pixels below the multiple second lenses.SELECTED DRAWING: Figure 1

Description

  The present technology relates to a solid-state imaging device. Specifically, the present invention relates to a solid-state imaging device including an on-chip lens.

  In a conventional solid-state imaging device, a microlens is provided as an on-chip lens through an interlayer insulating film in order to collect incident light on a photoelectric conversion unit included in a silicon substrate. In such a conventional solid-state imaging device, for example, a back-surface-receiving type solid-state imaging device that takes in light from a surface opposite to the wiring layer is proposed so that a part of the collected light is not bounced by the wiring. (For example, refer to Patent Document 1).

JP 2003-031785 A

  In the above-described prior art, light incident on the pixels is reflected by the surface of the on-chip lens and the surface of the silicon substrate, and the reflected light is reflected by a seal glass or the like on the surface of the package and reenters the solid-state imaging device. When the re-incident light is photoelectrically converted, a false signal called a ghost is generated. Here, the diffraction angle of the reflected light is defined by the arrangement interval between the photoelectric conversion unit and the on-chip lens. When light incident on the device is reflected, the intensity of the reflected light is distributed on the spot. When an on-chip lens is arranged with the same size as the pixel, the reflected light diffraction angles from the on-chip lens and the silicon substrate are the same angle, so these reflected lights strengthen each other, and reflected light with high intensity Is reflected from the solid-state imaging device. A strong ghost is generated when this is reflected on the sealing glass or the like and re-enters the device.

  The present technology has been created in view of such a situation, and an object thereof is to suppress the occurrence of a ghost in a solid-state imaging device including an on-chip lens.

  The present technology has been made to solve the above-described problems, and a first side surface of the present technology includes a plurality of first lenses arranged on top surfaces of a plurality of pixels arranged in a two-dimensional manner, A plurality of second lenses which are different in size from the plurality of first lenses and are arranged at a ratio of at least two for each of the plurality of pixels below the plurality of first lenses; A solid-state imaging device comprising: a plurality of photoelectric conversion units disposed for each of the plurality of pixels below the plurality of second lenses. Thereby, the effect | action that the reflected light which arises in a solid-state imaging device is disperse | distributed with the 1st and 2nd lens from which the pitch from which it arrange | positions differs is brought.

  In the first aspect, the plurality of second lenses are densely arranged on a plane parallel to the plurality of first lenses. As a result, the diffraction angles of the reflected light generated in the solid-state imaging device are made different from each other, and an effect of suppressing intensification is brought about.

  In the first aspect, the plurality of second lenses may be arranged such that any one of the plurality of second lenses coincides with the center of each of the plurality of pixels. This brings about the effect of reducing the dependence of the sensitivity on the incident angle.

  In the first aspect, the plurality of photoelectric conversion units may include an organic photoelectric conversion film provided between the upper electrode and the lower electrode.

  In the first aspect, the plurality of pixels include a pixel for acquiring a phase difference signal, and the lower electrode corresponding to the pixel for acquiring the phase difference signal is an optical axis of incident light. A first lower electrode having a formation region in a direction biased with respect to the optical axis, and a second lower electrode having a formation region in a direction biased to the side opposite to the first lower electrode with respect to the optical axis. It may be divided and formed. This brings about the effect | action of acquiring the phase difference signal sensitive to the change of an incident angle. In this case, it is desirable that the lower electrode corresponding to the pixel for obtaining the phase difference signal has the focal position of the incident light on the surface thereof.

  Further, in the first aspect, a silicon substrate provided below the plurality of photoelectric conversion units, and a plurality of other photoelectric conversion units provided in the silicon substrate and different from the plurality of photoelectric conversion units. Furthermore, you may comprise. In a structure that enables signal output in a plurality of wavelength ranges from a single pixel, the reflected light generated in the solid-state imaging device is dispersed.

  In the first aspect, the plurality of first lenses may be arranged in a ratio of at least two for each of the plurality of pixels. Thereby, the arrangement | positioning pitch of a 1st lens is adjusted and the effect | action of disperse | distributing the reflected light which arises in a solid-state imaging device is brought about.

  According to the present technology, it is possible to achieve an excellent effect that ghosting can be suppressed in a solid-state imaging device including an on-chip lens. Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.

It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 1st Embodiment of this technique. It is a top view showing an example of arrangement of a plurality of intralayer lenses 141 in a 1st embodiment of this art. It is a mimetic diagram showing an example of intensity distribution of reflected light in a 1st embodiment of this art. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 2nd Embodiment of this technique. It is a mimetic diagram showing an example intensity distribution of reflected light in a 2nd embodiment of this art. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 3rd Embodiment of this technique. It is a top view showing an example of arrangement of a plurality of inner lens 141 in a 3rd embodiment of this art. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 4th Embodiment of this technique. It is a top view showing an example of arrangement of a plurality of intralayer lenses 141 in a 4th embodiment of this art. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 5th Embodiment of this technique. It is sectional drawing which shows an example of the ideal condensing state of the solid-state imaging device in 5th Embodiment of this technique. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 6th Embodiment of this technique. It is sectional drawing which shows an example of the pixel structure of the solid-state imaging device in 7th Embodiment of this technique. It is a top view showing an example of arrangement of a plurality of on-chip lenses 162 in a 7th embodiment of this art.

Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described. The description will be made in the following order.
1. First embodiment (an example in which an in-layer lens is provided on a photoelectric conversion unit)
2. Second embodiment (example in which an intralayer lens is provided on an organic photoelectric conversion film)
3. Third Embodiment (Example in which an intralayer lens is arranged at the center position of a pixel)
4). Fourth embodiment (example in which the number of intra-layer lenses per pixel is changed)
5). Fifth embodiment (example in which an intralayer lens is provided in a phase difference detection pixel)
6). Sixth embodiment (an example in which an organic photoelectric conversion film and a photoelectric conversion unit in a silicon substrate are provided)
7). Seventh embodiment (example in which the number of on-chip lenses per pixel is changed)

<1. First Embodiment>
[Configuration of solid-state imaging device]
FIG. 1 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the first embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. The pixel structure in the first embodiment has a plurality of photoelectric conversion units 121 in a silicon substrate 111. The plurality of photoelectric conversion units 121 convert incident light into an electrical signal, and each pixel forms each pixel. The photoelectric conversion unit 121 is an example of the photoelectric conversion unit described in the claims. The silicon substrate 111 is an example of a silicon substrate described in the claims.

  This solid-state imaging device includes a plurality of on-chip lenses 161 arranged on the top surfaces of a plurality of pixels. The plurality of on-chip lenses 161 allow incident light to enter the solid-state imaging device. The on-chip lens 161 is an example of a first lens described in the claims.

  In addition, the solid-state imaging device includes a plurality of intra-layer lenses 141 inside. The plurality of intra-layer lenses 141 causes incident light received by the plurality of on-chip lenses 161 to enter the plurality of photoelectric conversion units 121. The in-layer lens 141 is an example of a second lens described in the claims.

  In the pixel structure according to the first embodiment, an intra-layer lens 141 is formed on a silicon substrate 111 via a first interlayer insulating film 131, and an on-chip lens is further interposed via a second interlayer insulating film 151. 161 is formed.

  The in-layer lens 141 is different in size from the on-chip lens 161. The plurality of intralayer lenses 141 are arranged densely (that is, without a gap) at a rate of at least two in a single pixel on a plane parallel to the plurality of on-chip lenses 161.

  FIG. 2 is a plan view illustrating an arrangement example of the plurality of intralayer lenses 141 according to the first embodiment of the present technology.

  In this example, a plurality of intra-layer lenses 141 are arranged in a single pixel region 190 in a total of 4 pieces of 2 × 2 in width. On the other hand, a plurality of on-chip lenses 161 are arranged in each pixel in this example. That is, the in-layer lens 141 and the on-chip lens 161 are arranged at different pitches. By forming the in-layer lens 141 in this way, the reflected light from the surface of the silicon substrate 111 can be dispersed and the ghost intensity can be weakened.

  In the first embodiment, 2 × 2 intra-layer lenses 141 are arranged per unit pixel. When this arrangement number is expressed as M × N, one of M or N is 2 It is the above integer, and the other may be an integer of 1 or more.

[Intensity distribution of reflected light]
FIG. 3 is a schematic diagram illustrating an example of an intensity distribution of reflected light according to the first embodiment of the present technology. In the figure, a indicates the reflected light from the on-chip lens 161. B in the figure shows the reflected light from the silicon substrate 111. C in the same figure shows the reflected light as the whole solid-state imaging device.

  The light incident on the solid-state imaging device is reflected on each of the surface of the on-chip lens 161 and the surface of the silicon substrate 111. At this time, the reflected light from the silicon substrate 111 becomes an angle larger than the reflection diffraction angle of the reflected light from the on-chip lens 161 by arranging the inner lens 141 smaller than the pixel size.

Here, the diffraction angle θ can be obtained by the following equation from Huygens' principle. Here, n is the interference order (positive integer), λ is the wavelength of light, and d is the pitch of the repetitive pattern.
sin θ = nλ / d

  That is, since the diffraction angles of the reflected light from the surface of the on-chip lens 161 and the surface of the silicon substrate 111 are different, the reflected light does not strengthen each other, and the intensity of the reflected light can be reduced. As a result, it is possible to prevent the reflected light from the seal glass or the like used for the package from re-entering the solid-state imaging device, and to weaken the intensity of the ghost generated by the photoelectric conversion of the re-incident light.

  As described above, according to the first embodiment of the present technology, when the plurality of photoelectric conversion units 121 are included in the silicon substrate 111, the ghost intensity is obtained by dispersing the reflected light using the intralayer lens 141. Can be weakened.

<2. Second Embodiment>
[Configuration of solid-state imaging device]
FIG. 4 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the second embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. In the pixel structure in the second embodiment, an organic photoelectric conversion film 122 sandwiched between a lower electrode 124 and an upper electrode 123 is disposed on a silicon substrate 111. In addition, an in-layer lens 141 is disposed on the upper electrode 123. The organic photoelectric conversion film 122 is an example of the photoelectric conversion unit and the organic photoelectric conversion film described in the claims.

  That is, the second embodiment is different from the first embodiment described above in that the organic photoelectric conversion film 122 is used as the photoelectric conversion unit. On the other hand, the arrangement of the plurality of in-layer lenses 141 and the plurality of on-chip lenses 161 is the same as that in the first embodiment. For example, in the single pixel region 190, a plurality of intra-layer lenses 141 are arranged in a total of four, 2 vertical × 2 horizontal, and a plurality of on-chip lenses 161 are arranged for each pixel. In this way, by forming the inner lens 141 with an arrangement pitch different from the on-chip lens 161, similarly to the first embodiment described above, the reflected light from the surface of the silicon substrate 111 is dispersed, Ghost strength can be weakened.

  When the organic photoelectric conversion film 122 is used as in the second embodiment, the main reflection surface of the light incident on the solid-state imaging device is the surface of the on-chip lens 161, the surface of the upper electrode 123 (inside the layer). These are three surfaces: the back surface of the lens 141, and the surface of the silicon substrate 111. Therefore, the dispersion mode of reflected light in the second embodiment is different from that of the first embodiment described above, as will be described below.

[Intensity distribution of reflected light]
FIG. 5 is a schematic diagram illustrating an example of an intensity distribution of reflected light according to the second embodiment of the present technology. In the figure, a indicates the reflected light from the on-chip lens 161. B in the figure shows the reflected light from the in-layer lens 141. “C” in the figure indicates the reflected light from the silicon substrate 111. D in the same figure shows the reflected light as the whole solid-state imaging device.

  Of the three surfaces, the diffraction angle of the reflected light from the surface of the upper electrode 123 is the same as the diffraction angle of the reflected light from the surface of the on-chip lens 161 and the surface of the silicon substrate 111 by disposing the in-layer lens 141. It can be different. Thereby, the intensity of the reflected light from the solid-state imaging device can be dispersed.

  In addition, by arranging the in-layer lens 141, when reflected light from the surface of the silicon substrate 111 enters from below the in-layer lens 141, the reflected light is refracted by the curvature of the in-layer lens 141. Therefore, it is possible to disperse the reflected light from the surface of the silicon substrate 111.

  As described above, according to the second embodiment of the present technology, when the organic photoelectric conversion film 122 is arranged on the silicon substrate 111, the reflected light is dispersed using the intralayer lens 141, whereby the ghost intensity is obtained. Can be weakened.

<3. Third Embodiment>
[Configuration of solid-state imaging device]
FIG. 6 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the third embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. In the pixel structure in the third embodiment, the arrangement of the in-layer lenses 141 is different compared to the second embodiment described above. On the other hand, the other structures are the same as those in the second embodiment.

  FIG. 7 is a plan view illustrating an arrangement example of the plurality of intralayer lenses 141 according to the third embodiment of the present technology.

  In this example, 2 × 2 intra-layer lenses 141 are arranged with respect to a single pixel, and the position of the intra-layer lens 141 is shifted by a distance that is half the diameter of the intra-layer lens 141 to obtain the center of the pixel. The in-layer lens 141 is disposed at the position. In other words, the arrangement pitch for the single pixel region 190 is 2 × 2 in-layer lenses 141 each, but is shifted so that the in-layer lens 141 is disposed at the center of the pixel. .

  In the third embodiment, the intralayer lens 141 located at the center of the pixel is present in the densely arranged intralayer lenses 141. Therefore, the light condensed by the on-chip lens 161 passes through the intralayer lens 141 disposed at the center of the pixel. Thereby, the dependence of the sensitivity on the incident angle can be reduced.

  At this time, it is desirable that the diameter of the focused spot by the on-chip lens 161 is smaller than the diameter of the in-layer lens 141. Therefore, the curvature and height of the on-chip lens 161 should satisfy this condition.

  In this example, the structure in which the arrangement of the in-layer lenses 141 is shifted with respect to the second embodiment is shown, but the same arrangement may be applied to the first embodiment.

  As described above, according to the third embodiment of the present technology, by arranging the center of the intralayer lens 141 at the center of the pixel, not only the reflected light is dispersed but also the sensitivity depends on the incident angle. Can be reduced.

<4. Fourth Embodiment>
[Configuration of solid-state imaging device]
FIG. 8 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the fourth embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. The pixel structure in the fourth embodiment is obtained by changing the number of arranged intralayer lenses 141 with respect to the pixel structure of the second embodiment described above. On the other hand, the other structures are the same as those in the second embodiment.

  FIG. 9 is a plan view illustrating an arrangement example of the plurality of intra-layer lenses 141 according to the fourth embodiment of the present technology.

  In this example, 3 × 3 intra-layer lenses 141 are arranged in a single pixel region 190, and nine intra-layer lenses 141 are arranged per unit pixel. In this arrangement example, the in-layer lens 141 is arranged at the center of the pixel without arranging the in-layer lens 141 in the boundary region between the pixels.

  In the fourth embodiment, the intralayer lens 141 located at the center of the pixel is present in the intralayer lenses 141 arranged densely. As a result, the dependency of the sensitivity on the incident angle can be reduced, and the intra-layer lens 141 does not exist in the boundary area between the pixels, so that even when light enters this area, crosstalk occurs between adjacent pixels. It has the advantage of being difficult.

  At this time, it is desirable that the diameter of the focused spot by the on-chip lens 161 is smaller than the diameter of the in-layer lens 141. Therefore, the curvature and height of the on-chip lens 161 should satisfy this condition.

  As for the number of arranged intra-layer lenses 141, the effect of dispersing the reflected light can be improved as the number is increased. On the other hand, when there are a large number of minute intra-layer lenses 141, the inner lenses Light passing through 141 is likely to be scattered. Therefore, an optimal lens design that combines the on-chip lens 161 and the in-layer lens 141 should be performed.

  In this example, the structure in which the arrangement of the in-layer lenses 141 is shifted with respect to the second embodiment is shown, but the same arrangement may be applied to the first embodiment.

  As described above, according to the fourth embodiment of the present technology, the inner lens 141 is arranged at the center of the pixel by adjusting the number of the inner lenses 141 arranged in the single pixel region. Can be. As a result, not only the reflected light is dispersed but also the dependency of the sensitivity on the incident angle can be reduced. Furthermore, crosstalk between adjacent pixels can be suppressed.

<5. Fifth embodiment>
[Configuration of solid-state imaging device]
FIG. 10 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the fifth embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. In the pixel structure in the fifth embodiment, the solid-state imaging device using the organic photoelectric conversion film 122 has a phase difference detection pixel. On the other hand, the planar arrangement of the plurality of intralayer lenses 141 is the same as that in the fourth embodiment.

  In the fifth embodiment, the lower electrode 125 in the phase difference detection pixel is divided into two parts in a single pixel region, and a signal output from one of the two divided lower electrodes 125 is output. . Separately, assuming the signal output of another phase difference detection pixel that performs signal output from the lower electrode on the opposite side (not shown), these are paired and output from the output of the phase difference detection pixel having different incident angle characteristics. By obtaining the phase difference signal, automatic focus alignment can be performed.

  FIG. 11 is a cross-sectional view illustrating an example of an ideal condensing state of the solid-state imaging device according to the fifth embodiment of the present technology. Incident light 201 when collimated light is incident is collected by the on-chip lens 161 and further focused on the surface of the lower electrode 124 by the in-layer lens 141.

  From this state, when the incident light angle changes, the focal position in the phase difference detection pixel moves in the horizontal direction of the drawing, the output voltage of the lower electrode 125 divided into the left and right largely fluctuates, and is sensitive to changes in the incident angle. It is possible to acquire a correct phase difference signal. Thereby, highly accurate focus position alignment can be performed.

  In this example, the height and curvature of the on-chip lens 161 and the inner lens 141 are appropriately formed, and the focal position of the light after passing through the inner lens 141 is designed to be the surface of the lower electrode 125. There is a need to.

  As described above, according to the fifth embodiment of the present technology, by providing the divided lower electrode 125 in the phase difference detection pixel, not only the reflected light is dispersed but also the change in the incident angle is sensitive. A phase difference signal can be acquired and high-precision focus alignment can be performed.

<6. Sixth Embodiment>
[Configuration of solid-state imaging device]
FIG. 12 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the sixth embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. In the pixel structure in the sixth embodiment, an organic photoelectric conversion film 122 is provided, and photoelectric conversion parts 126 and 127 are also formed in the silicon substrate 111. On the other hand, the planar arrangement of the plurality of intralayer lenses 141 is the same as that in the fourth embodiment.

  In the sixth embodiment, a first in-silicon substrate photoelectric conversion unit 126 and a second in-silicon substrate photoelectric conversion unit 127 are stacked and arranged in a silicon substrate 111. An organic photoelectric conversion film 122 sandwiched between the lower electrode 124 and the upper electrode 123 is provided on the silicon substrate 111. On the upper electrode 123, an in-layer lens 141 is provided. An on-chip lens 161 is disposed on the in-layer lens 141 with an interlayer insulating film 151 interposed therebetween. The photoelectric conversion units 126 and 127 are examples of other photoelectric conversion units described in the claims.

  In the sixth embodiment, by arranging the photoelectric conversion units 126 and 127 in the silicon substrate 111, the light in the wavelength region excluding the light in the wavelength region photoelectrically converted by the organic photoelectric conversion film 122 is further converted into silicon. Detection can be performed in the substrate 111.

  As shown in this example, in the case where the photoelectric conversion units 126 and 127 are arranged in two layers in the silicon substrate 111, a three-layer photoelectric conversion unit is stacked together with the organic photoelectric conversion film 122. That's right. Therefore, it is possible to output photoelectric conversion signals in different three wavelength regions from a single pixel.

  As described above, in the sixth embodiment of the present technology, in addition to the organic photoelectric conversion film 122, the photoelectric conversion units 126 and 127 are also formed in the silicon substrate 111, so that a single pixel has a plurality of wavelength ranges. Enable signal output. Even in such a structure that enables signal output in a plurality of wavelength regions from a single pixel, the reflected light can be dispersed using the intralayer lens 141.

<7. Seventh Embodiment>
[Configuration of solid-state imaging device]
FIG. 13 is a cross-sectional view illustrating an example of a pixel structure of a solid-state imaging device according to the seventh embodiment of the present technology. This solid-state imaging device has a plurality of pixels arranged two-dimensionally. In the pixel structure according to the seventh embodiment, a photoelectric conversion unit 121 is provided in a silicon substrate 111. An in-layer lens 142 is formed on the photoelectric conversion unit 121 via a first interlayer insulating film 131. An on-chip lens 162 is formed on the inner lens 142 via a second interlayer insulating film 151.

  The on-chip lens 162 is different in size from the in-layer lens 142. The plurality of on-chip lenses 162 are densely arranged at a ratio of at least two in a single pixel on a plane parallel to the plurality of intralayer lenses 142. The on-chip lens 162 is an example of a first lens described in the claims. The inner lens 142 is an example of a second lens described in the claims.

  FIG. 14 is a plan view illustrating an arrangement example of the plurality of on-chip lenses 162 according to the seventh embodiment of the present technology.

  In this example, a plurality of on-chip lenses 162 in a single pixel region 190 are arranged in a total of nine vertical 3 × horizontal 3 pieces. On the other hand, a plurality of intra-layer lenses 142 are arranged for each pixel in this example. That is, the inner lens 142 and the on-chip lens 162 are arranged at different pitches.

  The light that has entered the solid-state imaging device is reflected by each of the surface of the on-chip lens 162 and the surface of the silicon substrate 111. By arranging the on-chip lens 162 smaller than the pixel size, the reflected light from the surface of the on-chip lens 162 becomes an angle larger than the reflection diffraction angle of the reflected light from the in-layer lens 142. That is, since the diffraction angles of the reflected light from the surface of the on-chip lens 162 and the surface of the silicon substrate 111 are different, the reflected light does not strengthen each other, and the intensity of the reflected light can be reduced.

  In the seventh embodiment, 3 × 3 on-chip lenses 162 are arranged per unit pixel, but the present invention is not limited to this. That is, when this arrangement number is expressed as K × L, one of K or L can be an integer of 2 or more, and the other can be an integer of 1 or more.

  In the seventh embodiment, the example applied to the solid-state imaging device in which the photoelectric conversion unit 121 is provided in the silicon substrate 111 has been described. However, as described in the second to sixth embodiments, the organic photoelectric sensor is used. You may apply to the solid-state imaging device which provided the conversion film.

  As described above, according to the seventh embodiment of the present technology, by arranging the on-chip lens 162 smaller than the pixel size, the intensity of the reflected light can be reduced and the ghost intensity can be reduced.

  The above-described embodiment shows an example for embodying the present technology, and the matters in the embodiment and the invention-specific matters in the claims have a corresponding relationship. Similarly, the invention specific matter in the claims and the matter in the embodiment of the present technology having the same name as this have a corresponding relationship. However, the present technology is not limited to the embodiment, and can be embodied by making various modifications to the embodiment without departing from the gist thereof.

  In addition, the effect described in this specification is an illustration to the last, Comprising: It does not limit and there may exist another effect.

In addition, this technique can also take the following structures.
(1) a plurality of first lenses disposed on the top surfaces of a plurality of pixels arranged two-dimensionally;
A plurality of second lenses that are different in size from the plurality of first lenses and are arranged at a ratio of at least two for each of the plurality of pixels below the plurality of first lenses;
A solid-state imaging device comprising: a plurality of photoelectric conversion units arranged for each of the plurality of pixels below the plurality of second lenses.
(2) The solid-state imaging device according to (1), wherein the plurality of second lenses are densely arranged on a plane parallel to the plurality of first lenses.
(3) In the (1) or (2), the plurality of second lenses are arranged so that the centers of any of the plurality of second lenses coincide with the centers of the plurality of pixels. The solid-state imaging device described.
(4) The solid-state imaging device according to any one of (1) to (3), wherein the plurality of photoelectric conversion units include an organic photoelectric conversion film provided between an upper electrode and a lower electrode.
(5) The plurality of pixels include pixels for obtaining a phase difference signal,
The lower electrode corresponding to the pixel for acquiring the phase difference signal includes a first lower electrode having a formation region in a direction biased with respect to an optical axis of incident light, and the first electrode with respect to the optical axis. The solid-state imaging device according to (4), wherein the solid-state imaging device is formed by being divided into a second lower electrode having a formation region in a direction biased to the opposite side to the lower electrode.
(6) The solid-state imaging device according to (5), wherein the lower electrode corresponding to the pixel for acquiring the phase difference signal has a focal position of the incident light on a surface thereof.
(7) a silicon substrate provided below the plurality of photoelectric conversion units;
The solid-state imaging device according to any one of (1) to (4), further including a plurality of other photoelectric conversion units provided in the silicon substrate and different from the plurality of photoelectric conversion units.
(8) The solid-state imaging device according to any one of (1) to (7), wherein the plurality of first lenses are arranged at a ratio of at least two for each of the plurality of pixels.

111 Silicon substrate 121, 126, 127 Photoelectric conversion part 122 Organic photoelectric conversion film 123 Upper electrode 124, 125 Lower electrode 131, 151 Interlayer insulating film 141, 142 In-layer lens 161, 162 On-chip lens 190 Single pixel region

Claims (8)

A plurality of first lenses disposed on the top surfaces of a plurality of pixels arranged in a two-dimensional manner;
A plurality of second lenses that are different in size from the plurality of first lenses and are arranged at a ratio of at least two for each of the plurality of pixels below the plurality of first lenses;
A solid-state imaging device comprising: a plurality of photoelectric conversion units arranged for each of the plurality of pixels below the plurality of second lenses. The solid-state imaging device according to claim 1, wherein the plurality of second lenses are densely arranged on a plane parallel to the plurality of first lenses. 2. The solid-state imaging device according to claim 1, wherein the plurality of second lenses are arranged such that any one of the plurality of second lenses coincides with a center of each of the plurality of pixels. The solid-state imaging device according to claim 1, wherein the plurality of photoelectric conversion units include an organic photoelectric conversion film provided between an upper electrode and a lower electrode. The plurality of pixels include pixels for acquiring a phase difference signal,
The lower electrode corresponding to the pixel for acquiring the phase difference signal includes a first lower electrode having a formation region in a direction biased with respect to an optical axis of incident light, and the first electrode with respect to the optical axis. 5. The solid-state imaging device according to claim 4, wherein the solid-state imaging device is divided and formed into a second lower electrode having a formation region in a direction biased to the opposite side of the lower electrode. The solid-state imaging device according to claim 5, wherein the lower electrode corresponding to the pixel for acquiring the phase difference signal has a focal position of the incident light on a surface thereof. A silicon substrate provided below the plurality of photoelectric conversion units;
The solid-state imaging device according to claim 1, further comprising a plurality of other photoelectric conversion units provided in the silicon substrate and different from the plurality of photoelectric conversion units. The solid-state imaging device according to claim 1, wherein the plurality of first lenses are arranged in a ratio of at least two for each of the plurality of pixels.

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