JP2018194718A - Manufacturing method for led display panel - Google Patents

Abstract

To provide an LED display panel manufacturing method which manufactures an LED display panel efficiently.SOLUTION: An LED display panel manufacturing method includes the steps of: preparing an LED wafer split by a planned split line and having a plurality of LEDs arranged, via a buffer layer, on a surface of an epitaxy substrate; preparing a display substrate including electrodes arranged in rows and columns; positioning the LED wafer to face the electrodes of the display substrate; irradiating the display substrate or the LED wafer arranged facing each other by the LED wafer positioning step with a laser beam having a transparent wavelength, to connect electrodes of the LEDs to the electrodes of the display substrate corresponding to the LED electrodes; and irradiating the buffer layer of the LED with the laser beam having the transparent wavelength with respect to the display substrate or the LED wafer, to destroy the buffer layer, and separates the LED from the epitaxy substrate to be arranged in the display substrate.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing an LED display panel using LEDs.

  An epitaxial layer such as a buffer layer, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer, and an N-type semiconductor layer and a P-type semiconductor layer are disposed on the upper surface of an epitaxial substrate such as a sapphire substrate or SiC substrate by epitaxial growth. A wafer formed by dividing a plurality of LEDs configured by the divided electrodes by the planned dividing lines is cut into the individual LEDs by cutting the planned dividing lines together with the epitaxy substrate by a laser beam or the like (for example, Patent Documents). 1).

  In addition, a technique for irradiating a laser beam from the back surface of the epitaxy substrate to break the buffer layer and peeling the epitaxial layer from the epitaxy substrate has been proposed (see, for example, Patent Document 2).

  The peeled LEDs are assembled as an integrated module chip including red LEDs, green LEDs, blue LEDs, and LEDs that emit other colors, and used for monitors formed as an assembly of module chips. Is done.

JP-A-10-305420 JP 2002-314053 A

  According to a conventionally known configuration, when an individual LED is incorporated in a module chip, the epitaxial layer constituting the LED is first peeled off from the epitaxy substrate, and each LED is separated into individual LEDs. In order to mount the LED on the module, it is necessary to perform rearrangement at a predetermined interval on the substrate that is temporarily held, and then, for example, to incorporate the LED rearranged on the substrate into the module side. It takes a lot of time to obtain individual module chips equipped with a plurality of types of LEDs. In particular, in order to produce a monitor that uses a micro LED, a large amount of module chips are required, and a small module chip is integrated to assemble an LED display panel. Therefore, an LED display panel is efficiently manufactured. This is difficult, and further improvement in the efficiency of manufacturing LED display panels is desired. The “micro LED” referred to in the present invention refers to an LED having a side dimension of the LED of the order of μm (less than 1000 μm, for example, 10 μm × 10 μm).

  This invention is made | formed in view of the said fact, The main technical subject is to provide the manufacturing method of the LED display panel which manufactures an LED display panel efficiently.

  In order to solve the above main technical problem, according to the present invention, there is provided an LED display panel manufacturing method for manufacturing an LED display panel, wherein a plurality of LEDs are partitioned on a surface of an epitaxy substrate through a buffer layer. An LED wafer preparation process for preparing the provided LED wafer, a display board preparation process for preparing a display substrate in which a plurality of electrodes are arranged in rows and columns, and an LED wafer facing the electrodes of the display substrate LED wafer positioning step for positioning, and a display substrate or a display substrate corresponding to the LED electrode by irradiating a laser beam having a wavelength that is transparent to the display substrate or the LED wafer faced by the LED wafer positioning step Electrode connection to connect with other electrodes Then, a laser beam having a wavelength that is transparent to the display substrate or the LED wafer is irradiated to the buffer layer of the LED positioned on the display substrate to break the buffer layer, and the LED is peeled off from the epitaxy substrate to form the display substrate. There is provided a method for manufacturing an LED display panel including at least an LED disposing step.

According to the present invention, there is also provided an LED display panel manufacturing method for manufacturing an LED display panel. An LED wafer preparation step for preparing at least a second LED wafer having a plurality of second LEDs on a surface of an epitaxy substrate that is partitioned by a division line and having a plurality of second LEDs on a surface thereof;
A display substrate preparation step of preparing a display substrate in which a plurality of electrodes are arranged in rows and columns, and a first LED wafer or a second LED wafer facing each other in correspondence with the electrodes of the display substrate LED wafer positioning step for positioning, and a laser beam having a wavelength having transparency to the display substrate or the LED wafer faced by the LED wafer positioning step corresponds to the LED electrode and the LED electrode An electrode connecting step for connecting the electrodes of the display substrate, and a laser beam having a wavelength that is transmissive to the display substrate or the LED wafer is irradiated to the buffer layer of the LED positioned on the display substrate to destroy the buffer layer. Is removed from the epitaxy substrate and the first LE At least includes method for producing configured LED display panel and LED disposed step, the disposing a second LED on the display substrate.

  The display substrate includes at least a first display substrate and a second display substrate, and in the electrode connecting step, the surface of the first LED wafer faces the surface of the first display substrate, and has a predetermined interval. Position the electrodes of the first LED corresponding to the electrodes disposed in the rows and columns of the first display substrate to the electrodes of the first display substrate, with respect to the first display substrate or the first LED wafer. And irradiating a transparent laser beam to connect the electrode of the first LED and the electrode of the first display substrate, and performing the LED disposing step to connect the first LED to the first display substrate. A step disposed on the surface of the second LED wafer and the surface of the second LED wafer face the surface of the second display substrate. The second LED electrode corresponding to the electrodes arranged in the rows and columns of the substrate is positioned on the electrode of the second display substrate and transmitted to the second display substrate or the second LED wafer. The second LED is disposed on the second display substrate by irradiating the second LED electrode and the second display substrate electrode by irradiating a laser beam having a property and performing the LED disposing step. B step, and the second LED wafer used in the B step is faced to the surface of the first display substrate on which the first LEDs are arranged at a predetermined interval in the A step. The electrodes of the second LED corresponding to the electrodes arranged in the rows and columns of the display substrate are positioned on the electrodes of the first display substrate, and the first display substrate or the second L A laser beam having transparency to the D wafer is irradiated to connect the electrode of the second LED and the electrode of the first display substrate, and at the same time, the LED arranging step is performed to connect the second LED to the first LED. The first LED wafer used in the A step is made to face the surface of the second display substrate in which the second LED is disposed at a predetermined interval in the B step and the C step disposed on the display substrate. The second display substrate or the first LED wafer is positioned by positioning the electrodes of the first LED corresponding to the electrodes arranged in the rows and columns of the second display substrate at predetermined intervals on the electrodes of the second display substrate. The first LED electrode and the second display substrate electrode are connected to each other by irradiating a laser beam having transparency to the LED, and the LED arranging step is performed. In addition, it is preferable to include at least a D step of disposing the first LED on the second display substrate.

The display substrate includes at least a first display substrate, a second display substrate, a third display substrate, and a fourth display substrate. In the electrode connecting step, the surface of the first LED wafer is the first display substrate. The electrodes of the first LED corresponding to the electrodes arranged in rows and columns of the first display substrate with a predetermined interval facing the surface of the display substrate are positioned on the electrodes of the first display substrate. A laser beam having transparency to the first display substrate or the first LED wafer is irradiated to connect the electrode of the first LED and the electrode of the first display substrate, and the LED arranging step And a first step of disposing the first LED on the first display substrate and the surface of the second LED wafer on the second display. The electrodes of the second LED corresponding to the electrodes arranged in rows and columns of the second display substrate with a predetermined interval facing the surface of the substrate are positioned on the electrodes of the second display substrate. A laser beam having transparency to the second display substrate or the second LED wafer is irradiated to connect the electrode of the second LED and the electrode of the second display substrate, and the LED arranging step And a second step of arranging the second LED on the second display substrate, and the surface of the second LED wafer used in the second step is made to face the surface of the third display substrate. The electrodes of the second LED corresponding to the electrodes arranged in rows and columns of the third display substrate with a predetermined interval are positioned on the electrodes of the third display substrate. A laser beam having transparency to the play substrate or the second LED wafer is irradiated to connect the electrode of the second LED and the electrode of the third display substrate, and the LED arranging step is performed. A third step of disposing a second LED on the third display substrate; a surface of the third LED wafer facing the surface of the fourth display substrate; The electrodes of the third LED corresponding to the electrodes arranged in rows and columns are positioned on the electrodes of the fourth display substrate so as to be transparent to the fourth display substrate or the third LED wafer. The third LED is connected to the electrode of the fourth display substrate by irradiating a laser beam having the third LED, and the third LED is connected to the fourth display by performing the LED disposing step. A fourth step disposed on the spray substrate, and a second step used in the third step on the surface of the first display substrate in which the first LEDs are disposed at a predetermined interval in the first step. The electrode of the second LED corresponding to the electrodes arranged in rows and columns of the first display substrate with a predetermined interval facing each other is positioned on the electrode of the first display substrate, and the first display substrate is positioned. A laser beam having transparency to the substrate or the second LED wafer is irradiated to connect the electrode of the second LED and the electrode of the first display substrate, and the LED arranging step is performed to perform the second step. In the fifth step of arranging the LEDs on the first display substrate, and in the second step or the third step, the second LED is arranged at a predetermined interval. One of the display substrates or the third display substrate is selected, and the third LED wafer used in the fourth step is made to face the surface of the selected one display substrate with a predetermined interval. The electrode of the third LED is positioned on the electrode arranged in the row and the column of one display substrate, and a laser beam having transparency to the one display substrate or the third LED wafer is irradiated to form a third LED. A sixth step of connecting the electrode of the LED and the electrode of the one display substrate and performing the LED disposing step to dispose a third LED on the one display substrate;
The second LED that was not selected in the sixth step is placed on the surface of the other display substrate on which the second LED is arranged at a predetermined interval, and the first LED wafer used in the first step is made to face the predetermined LED. The electrode of the first LED is positioned on the electrode arranged in the row and column of the other display substrate, and the first display wafer or the first LED wafer is irradiated with a laser beam having transparency. A seventh step of connecting the electrode of the LED to the electrode of the other display substrate and performing the LED disposing step to dispose the first LED on the other display substrate; In the step, the second LED wafer used in the fifth step is opposed to the surface of the fourth display substrate in which the third LEDs are arranged at a predetermined interval. The electrode of the second LED is positioned on the electrodes arranged in rows and columns of the fourth display substrate at a predetermined interval, and is transparent to the fourth display substrate or the second LED wafer. A laser beam is irradiated to connect the electrode of the second LED and the electrode of the fourth display substrate, and the LED disposing step is performed to dispose the second LED on the fourth display substrate. In the eighth step and the fifth step, the third LED wafer used in the sixth step is faced to the first display substrate on which the first LED and the second LED are arranged. The electrodes of the third LED are positioned on the electrodes arranged in the rows and columns of the first display substrate with a distance of and are transparent to the first display substrate or the third LED wafer. A laser beam is applied to connect the electrode of the third LED and the electrode of the first display substrate, and the LED disposing step is performed to dispose the third LED on the first display substrate. A ninth step;
The first LED wafer used in the seventh step is made to face the one display substrate in the sixth step in which the second LED and the third LED are arranged, and the one display is provided at a predetermined interval. The electrodes of the first LED are positioned on the electrodes arranged in the rows and columns of the substrate and irradiated with a laser beam having transparency to the one display substrate or the first LED wafer. In the tenth step and the eighth step, the third LED is disposed on the one display substrate by performing the LED disposing step and connecting the electrode of the one display substrate to the electrode of the one display substrate. The first LED wafer used in the tenth step faces the fourth display substrate on which the second LED and the third LED are arranged, and the first LED wafer used in the tenth step is faced to the fourth LED substrate. The electrodes of the first LED are positioned on the electrodes arranged in the rows and columns of the display substrate, and a laser beam having transparency to the fourth display substrate or the first LED wafer is irradiated to the first LED. An eleventh step of connecting the electrode of the LED and the electrode of the fourth display substrate and performing the LED disposing step to dispose the first LED on the fourth display substrate; The third LED wafer used in the ninth step is made to face the other display substrate in the seventh step in which the LED of the first and the first LED are arranged, and the other display substrate of the other display substrate is placed at a predetermined interval. Position the third LED electrode on the electrodes arranged in rows and columns and irradiate the other display substrate or the third LED wafer with a laser beam having transparency. At least a twelfth step of connecting the electrodes of the three LEDs and the electrodes of the other display substrate and performing the LED disposing step to dispose the third LED on the other display substrate. It may be included.

  In addition, the first LED emits red, the second LED emits green, and the third LED emits blue, and the electrode connection structure is transparent to the display substrate. A laser beam of a wavelength having a wavelength is irradiated from the back side of the display substrate to connect the LED electrode and the corresponding electrode of the display substrate. The LED buffer layer positioned on the display substrate may be irradiated from the back surface of the LED to destroy the buffer layer, and the LED may be peeled off from the epitaxy substrate to dispose the LED on the display substrate.

  The present invention relates to an LED display panel manufacturing method for manufacturing an LED display panel, and an LED wafer preparation step for preparing an LED wafer having a plurality of LEDs on a surface of an epitaxy substrate, which is partitioned by lines to be divided, via a buffer layer. A display substrate preparation step of preparing a display substrate in which a plurality of electrodes are arranged in rows and columns, an LED wafer positioning step of positioning the LED wafer so as to face the electrodes of the display substrate, and positioning the LED wafer An electrode connecting step of connecting the electrode of the LED and the electrode of the display substrate corresponding to the LED electrode by irradiating the display substrate or LED wafer faced by the step with a laser beam having a wavelength that is transparent; Display substrate or LED way LED disposing step of irradiating the buffer layer of the LED positioned on the display substrate with a laser beam having a wavelength transmissive to the LED substrate, destroying the buffer layer, peeling the LED from the epitaxy substrate, and disposing the LED on the display substrate; Therefore, it is possible to arrange the LED directly on the display panel, and it is possible to manufacture the LED display panel much more efficiently than in the past.

It is a perspective view which shows the laser processing apparatus for enforcing the LED display panel manufacturing method comprised based on this invention. It is a partial perspective view for demonstrating the holding means and its operation | movement of the laser processing apparatus described in FIG. It is a perspective view of the LED wafer applied to the LED display panel manufacturing method of this invention. It is a perspective view of a display substrate applied to the LED display panel manufacturing method of the present invention. It is a conceptual diagram for demonstrating the LED wafer positioning process of this invention. It is a conceptual diagram for demonstrating the 1st step (A step) of this invention. FIG. 7 is an enlarged perspective view of a part of a display substrate obtained by performing the first step shown in FIG. 6. It is a conceptual diagram for demonstrating the 2nd step (B step) of this invention. It is a conceptual diagram for demonstrating the 3rd step of this invention. It is a conceptual diagram for demonstrating the 4th step of this invention. It is a conceptual diagram for demonstrating the 5th step (C step) of this invention. It is a conceptual diagram for demonstrating the 6th step of this invention. It is a conceptual diagram for demonstrating the 7th step (D step) of this invention. It is a conceptual diagram for demonstrating the 8th step of this invention. It is a conceptual diagram for demonstrating the 9th step of this invention. It is a conceptual diagram for demonstrating the 10th step of this invention. It is a conceptual diagram for demonstrating the 11th step of this invention. It is a conceptual diagram for demonstrating the 12th step of this invention. It is the perspective view which expanded some display substrates acquired by implementing the 1st-12th step of the present invention.

  Hereinafter, a method for manufacturing an LED display panel according to the present invention will be described in detail with reference to the accompanying drawings.

  First, an embodiment of a laser processing apparatus suitable for carrying out an LED display panel manufacturing method of the present invention will be described.

  FIG. 1 shows a laser processing apparatus 40. A laser processing apparatus 40 shown in the figure includes a base 41, a holding means 42 for holding a display substrate to be processed, a moving means 43 for moving the holding means 42, a laser beam irradiation means 44 for irradiating a laser beam, A frame 45 containing a laser beam irradiation means 44 extending upward from the upper surface of the base 41 and then extending substantially horizontally, and control means (not shown) constituted by a computer are provided. It is configured to be controlled. Further, a concentrator 44a including an fθ lens constituting the laser beam irradiation means 44 and a concentrator 44a are arranged in the direction indicated by the arrow X in FIG. The LED wafer holding means 50 for holding the LED wafer and the imaging means 48 for imaging the processing area of the workpiece are provided.

  The holding means 42 includes a rectangular X-direction movable plate 60 that is mounted on the base 41 so as to be movable in the X direction indicated by an arrow X in the figure, and an X direction that is freely movable in the Y direction indicated by an arrow Y in the figure. A rectangular Y-direction movable plate 61 mounted on the movable plate 60, a cylindrical column 62 fixed to the upper surface of the Y-direction movable plate 61, and a rectangular holding table 63 fixed to the upper end of the column 62 including. A holding frame 64 composed of a rectangular frame is disposed in the center of the holding table 63, and the holding frame 64 sucks and holds the outer periphery of the first display substrate, which is a workpiece. It is configured. Inside the support 62, similarly to the laser beam irradiation means 44 described above, laser beam irradiation means (not shown) having a configuration such as a condenser including an fθ lens is provided (not shown), and on the holding frame 64. It is configured to be able to irradiate a laser beam toward a work piece that is sucked and held by the laser beam. In this embodiment, the X direction is a direction indicated by an arrow X in FIG. 1, and the Y direction is a direction indicated by an arrow Y in FIG. 1 and is a direction orthogonal to the X direction. The plane defined by the X direction and the Y direction is substantially horizontal.

  The moving means 43 includes an X direction moving means 80 and a Y direction moving means 82. The X direction moving means 80 converts the rotational motion of the motor into a linear motion and transmits it to the X direction movable plate 60, and moves the X direction movable plate 60 along the guide rail on the base 41. Advance and retreat in the X direction. The Y-direction moving means 82 converts the rotational motion of the motor into a linear motion, transmits it to the Y-direction movable plate 61, and advances and retracts the Y-direction movable plate 61 in the Y direction along the guide rail on the X-direction movable plate 60. . Although not shown, the X direction moving means 80 and the Y direction moving means 82 are provided with position detecting means, respectively, and the holding table is positioned in the X direction, the Y direction, and the circumferential direction. The position is accurately detected, and the X-direction moving means 80 and the Y-direction moving means 82 are driven based on a signal instructed by the control means described later, so that the holding table can be accurately positioned at an arbitrary position and angle. It has become.

  The image pickup means 48 includes an optical system and an image pickup device (CCD) constituting a microscope, and is configured to send a picked up image signal to the control means and display it on a display means (not shown). Note that the imaging unit 48 may include an infrared light irradiation unit and an imaging element capable of imaging infrared light as necessary. The control means is constituted by a computer, and a central processing unit (CPU) that performs arithmetic processing according to a control program, a read-only memory (ROM) that stores a control program, and the like, and temporarily detects detected values and arithmetic results. A random access memory (RAM) that can be read and written, an input interface, and an output interface (details are not shown).

  The LED wafer holding means 50 will be described in detail with reference to FIG. As shown in FIG. 2A, an LED wafer holding means 50 for holding three color LED wafers, that is, a red LED wafer 20, a green LED wafer 22, and a blue LED wafer 24, includes a wafer holding ring 52 and a wafer holding ring. The holding arm 54 supports the holding base 56 disposed on the lower surface of the distal end portion of the horizontally extending frame 45 through the opening hole 56 a of the holding base 56. It is connected to driving means (not shown) built in the holding base 56. The wafer holding ring 52 has an annular opening 58 formed in accordance with the dimensions of the LED wafer, and an annular stepped portion 52 a on which the LED wafer is placed is located inside the wafer holding ring 52. It is arranged along. In the upper surface of the stepped portion 52a, a plurality of suction holes 52b for sucking and holding the LED wafer to be placed are arranged at a predetermined interval in the circumferential direction. When holding the LED wafer, for example, As shown in FIG. 2B, the surface 20a of the LED wafer 20 is positioned upward with respect to the opening 58 and placed on the stepped portion 52a. At this time, the direction of the LED wafer 20 held by the substrate holding means 52 is accurately determined by placing the orientation flat OF of the LED wafer 20 so as to face the linear portion 52c formed in the wafer holding ring 52. Can be specified. The suction hole 52b is connected to a suction means (not shown) via a suction passage formed inside the wafer holding ring 52 and the holding arm 54. By operating the suction means, the LED wafer 20 is sucked and held. To do.

  The wafer holding ring 52 holding the LED wafer 20 can rotate the holding arm 54 in the direction indicated by the arrow 54 a in FIG. 2C by the driving means disposed on the holding base 56. Thus, both the front surface 20a and the back surface 20b of the LED wafer 20 can be directed upward. Further, the wafer holding ring 52 can be moved in the vertical direction indicated by the arrow 54b in accordance with a command from the control means, and can be accurately controlled to a desired height position.

  The laser processing apparatus 40 is generally provided with the above-described configuration, and the LED display panel manufacturing method of the present invention that is executed using the laser processing apparatus 40 will be described below.

  First, a first LED wafer (hereinafter referred to as “red LED wafer”) including a plurality of first LEDs (hereinafter referred to as “red LEDs”) and a second LED (hereinafter referred to as “green LEDs”). A plurality of second LED wafers (hereinafter referred to as “green LED wafers”) and a third LED wafer (hereinafter referred to as “blue LED wafers”) including a plurality of third LEDs (hereinafter referred to as “blue LEDs”). The LED wafer preparation process for preparing is performed.

  3A shows a red LED wafer 20 on which the red LED 21 prepared in the LED wafer preparation step of the present invention is formed, and FIG. 3B shows a green LED wafer on which the green LED 23 is formed. 22 and FIG. 3C show an LED wafer 24 on which a blue LED 25 is formed, and partially enlarged sectional views AA, BB, and CC are also shown. As shown in the figure, each LED wafer has a substantially disk shape and is configured with a diameter of 4 inches≈100 mm. Each LED wafer emits red light on the upper surface of an epitaxial substrate 201, 221, 241 such as a sapphire substrate or SiC substrate via a buffer layer BF made of a Ga compound (eg, gallium nitride: GaN). LED layers constituting the LED 21, the green LED 23 that emits green light, and the blue LED 25 that emits blue light are formed. The red LED 21, the green LED 23, and the blue LED 25 include an epitaxial layer composed of an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer, and an electrode composed of a P-type semiconductor and an N-type semiconductor disposed on the upper surface of the epitaxial layer. (Illustration is omitted). In each LED wafer, adjacent LEDs are partitioned and formed at predetermined intervals 202, 222, and 242. The size of a region in which each LED is arranged is 10 μm × 10 μm in plan view. Is set to In regions where predetermined intervals 202, 222, and 242 constituting the LEDs are formed, the epitaxy substrates 201, 221, and 241 are exposed.

  On the outer periphery of each LED wafer, a linear portion indicating the crystal orientation, so-called orientation flat OF is formed. The red LED 21, green LED 23, and blue LED 25 formed on the upper surface of each LED wafer are based on the crystal orientation. Arranged in a predetermined direction. It is known that red, green, and blue light emission in the red LED 21, green LED 23, and blue LED 25 is obtained by changing the material constituting the light emitting layer. For example, the red LED 21 is made of aluminum gallium arsenide (AlGaAs), green The LED 23 uses gallium phosphide (GaP), and the blue LED 25 uses gallium nitride (GaN). In addition, the material which forms red LED21 of this invention, green LED23, and blue LED25 is not limited to this, The well-known material for light-emitting each color can be employ | adopted, and each color is light-emitted using another material. It is also possible. Furthermore, the present invention is not limited to the three colors described above, and other color LEDs such as yellow LEDs may be used. Moreover, in this embodiment, as shown to Fig.3 (a)-(c), LED wafer 20,22,24 provided with red LED21, green LED23, and blue LED25 on the surface has the same number of LED devices. Arranged in an array.

  In combination with the LED wafer preparation step described above, a display substrate preparation step of preparing a display substrate in which a plurality of electrodes are arranged in rows and columns is performed. In the present embodiment, for example, four display substrates (first to fourth display substrates 10 </ b> A to 10 </ b> A to 10 </ b> A to 4 </ b> A) having the same configuration with a 4-inch size (horizontal 4.98 cm, vertical 8.84 cm) made of a glass plate. 10D) FIG. 4 shows a first display substrate 10A prepared by the display substrate preparation step. On the upper surface of each display substrate of this embodiment, as can be understood from the enlarged portion 11a showing an enlarged part of the display substrate, a plurality of two electrodes 124 arranged in the row direction are arranged in the column direction and the row direction. When each LED is disposed, the anode electrode and cathode electrode of each LED are connected to two electrodes 124 arranged in the row direction. The two electrodes 124 are arranged at intervals of about 10 μm in three sets (124a, 124b, 124c) in the column direction, and a red LED 21, a green LED 23, and a blue LED 25 are arranged respectively. A plurality of sets of the three sets of electrodes 124 are arranged on each display substrate, and an interval is set so that the three LEDs are accommodated at the same interval. Any of the LED wafer preparation step and the display substrate preparation step may be performed first.

  Based on the drawings, a process following the LED wafer preparation process and the display substrate preparation process will be described. When the LED wafer preparation step and the display substrate preparation step are performed, the LED wafer is positioned on the display substrate using the laser processing apparatus 40 shown in FIG. An LED wafer positioning process is performed to face and position the LED wafer.

  More specifically, first, the holding table 63 in the laser processing apparatus 40 shown in FIG. 1 is moved to the front substrate mounting region in the figure by operating the moving means 43. If the holding table 63 is moved to the position shown in FIG. 1, the electrode 124 of the first display substrate 10A is formed on the stepped portion 64a of the holding frame 64 on the upper surface of the holding table 63 as shown in FIG. The surface 10Aa thus placed is placed upward, and suction means (not shown) is operated to apply suction force to the suction hole 64b to hold it by suction. If the first display substrate 10A is sucked and held on the holding frame 64, the first display substrate 10A is picked up and held on the holding frame 64, and the first display substrate 10A is imaged using the imaging means 48 described above. Alignment is performed to align the optical device 44a with the processing position of the first display substrate 10A.

  When the alignment is completed by completing the alignment, the LED wafer holding means 50 is brought into the state shown in FIG. Placed on the part 52a. As described above, when the red LED wafer 20 is held on the wafer holding ring 52, the orientation flat OF of the red LED wafer 20 is positioned and placed on the straight portion 52c of the wafer holding ring 52 as described above. By doing so, it is possible to accurately position the wafer holding ring 52 in a desired direction (see FIG. 2B).

  When the red LED wafer 20 is placed on the stepped portion 52a, a suction means (not shown) is operated to suck the red LED wafer 20 from the suction hole 52b and bring the red LED wafer 20 into a suction holding state. When the red LED wafer 20 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the rear surface 20b side of the red LED wafer 20 is exposed upward, and the direction is changed so that the front surface 20a on which the red LED 21 is formed faces downward. If the red LED wafer 20 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the first display substrate 10A held on the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the first display substrate 10A is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the first display substrate 10A by a predetermined amount is moved. Lower (see FIG. 5). FIG. 5 also shows an enlarged view of a part 11a of the first display substrate 10A. At this time, as can be understood from FIG. 6A which specifically shows the positional relationship when the red LED wafer 20 and the first display substrate 10A are viewed from the side in the column direction, the red LED wafer 20 is the first one. The electrode on the red LED 21 side of the red LED wafer 20 is positioned at a position facing the corresponding electrode 124a on the surface 10Aa of the first display substrate 10A by being lowered toward the surface 10Aa of the display substrate 10A. Then, the LED wafer holding means 50 is operated and lowered from this state, and the electrode on the red LED 21 side is brought into contact with the corresponding electrode 124a on the surface 10Aa of the first display substrate 10A. This is the positioning process of the present invention. In FIG. 6, the wafer holding ring 52 for holding the LED wafer and the holding frame 64 for holding the first display substrate 10A are omitted for convenience of explanation.

  Through the LED wafer positioning step, the red LED 21 of the red LED wafer 20 is positioned on the electrode 124a of the first display substrate 10A, and the anode electrode and the cathode electrode on the red LED 21 side are the two electrodes of the first display substrate 10A. If it is made to contact | abut to 124a, an electrode connection process will be implemented. More specifically, the position of the laser oscillator and the galvano mirror (not shown) built in the support 62 is controlled by the command from the control means to adjust the incident position of the laser beam on the fθ lens. 6 (c), from the back surface 10Ab side of the first display substrate 10A, the first display substrate 10A has a transmission wavelength and the electrode 124 has an absorption wavelength ( For example, a laser beam LB1 of 1030 nm is irradiated with adjustment so that the focal point is in the vicinity of the position of the electrode 124a. As described above, since each LED has two electrodes, the irradiation position of the laser beam LB1 is adjusted in the column direction and irradiated twice. As a result, the electrode of the red LED 21 serving as the target and the electrode 124a of the first display substrate 10A are melted and connected. In this embodiment, the interval between the electrodes 124a arranged at equal intervals in the column direction on the first display substrate 10A side is the same as that between the red LEDs 21 arranged at equal intervals on the red LED wafer 20. The number of red LEDs 21 that are arranged in the column direction is set to face the electrode 124a every six. Therefore, if the leftmost electrode of the red LED 21 and the electrode 124a on the first display substrate 10A side are electrically connected by the method described above, then the incident position of the laser beam LB1 on the fθ lens is adjusted. Then, six adjacent red LEDs 21 as viewed in the column direction are irradiated with the laser beam LB1, and the electrode of the next red LED 21 is connected to the facing electrode 124a. In this way, the laser beam LB1 is irradiated to the red LEDs 21 corresponding to all the electrodes 124a arranged in the column direction and the row direction of the first display substrate 10A, and the electrodes of the red LED 21 are applied to the first display substrate 10A. The electrode connection process is completed by connecting to all the electrodes 124a.

  When the electrode connecting step is completed, a laser beam LB2 having a wavelength that is transparent to the epitaxy substrate 201 of the red LED wafer 20 and absorbable to the buffer layer BF is then displayed. An LED arrangement in which the buffer layer BF of the red LED 21 subjected to the electrode connecting step on the substrate 10A is irradiated to destroy the buffer layer BF, and the red LED 21 is peeled off from the epitaxy substrate 201 and disposed on the first display substrate 10A. The installation process is carried out.

  The LED placement process will be described more specifically. In response to a command from the control means, a command is sent to a laser oscillator (not shown) of the laser beam irradiation means 44. Furthermore, the galvanometer mirror is controlled to adjust the incident position with respect to the fθ lens. From the back surface 20b side of the red LED wafer 20, the epitaxy substrate 201 is transparent and the buffer layer BF is absorptive. A laser beam LB2 having a wavelength (for example, 1030 nm) is irradiated toward the buffer layer BF located on the back surface of the red LED 21 in which the electrode is connected to the electrode 124a of the first display substrate 10A by the electrode connecting step described above. (See FIG. 6D.) As a result, the buffer layer BF is destroyed, a gas layer is formed at the interface between the epitaxy substrate 201 and the red LED 21, the red LED 21 is peeled off from the epitaxy substrate 201, and the red LED 21 is completely separated from the red LED 20. , The first display substrate 10A is fixed. The spot diameter of the laser beam LB2 can be adjusted as appropriate. For example, once the spot diameter (for example, 8 to 9 μm) covers the substantially entire back surface of the red LED 21 where the buffer layer BF is formed. Fθ lens so that the entire surface of the buffer layer BF on the back surface of the red LED 21 is destroyed if the pulse laser beam has a smaller spot diameter (for example, 4 μm). The red LED 21 can be peeled from the red wafer 220 by changing the incident position of the laser beam incident on the laser beam and irradiating the pulse laser beam LB2 about four times. Such irradiation with the laser beam LB2 is performed on all the red LEDs 21 connected to the electrode 124a on the first display substrate 10A side, and the wafer holding ring 52 is raised (see FIG. 6E). .), The LED arrangement process is completed, and each electrode 124a on the first display substrate 10A is enlarged as shown in FIG. 7 showing an enlarged part (11a) of the first display substrate 10A. In this state, the red LED 21 is disposed. The electrode connection process for arranging the red LED 21 on the first display substrate 10A and the LED arrangement process are referred to as a “first step”.

  In the embodiment described above, the laser beam LB1 used in the electrode connecting step is the red LED wafer 20 from the back surface side (lower side in the drawing) of the first display substrate 10A and the laser beam LB2 used in the buffer layer LED arranging step. Irradiation was performed from the back side (upper side in the figure). However, the present invention is not limited to this, and the laser beam irradiation means 44 disposed in the frame 45 is used to emit the laser beam LB1 from the upper side of the red LED wafer 20 from the upper side even in the electrode connecting step. Irradiation is also possible. In that case, the laser beam oscillated by the laser beam oscillator can be switched between LB1 and LB2, and the wavelength of the laser beam LB1 used is transparent to the epitaxy substrate 201 of the red LED wafer 20. The wavelength at which the electrode can be melted is selected. Similarly, it is possible to irradiate both the laser beams LB1 and LB2 using the laser beam irradiation means disposed in the support column 62, and to perform the electrode connecting process and the LED arranging process from below the holding frame 64. Good. This is the same in the second and subsequent steps described below, and the direction in which the laser beam is irradiated is not particularly limited. However, in consideration of the influence on the LED, it is preferable to irradiate the laser beam when performing the electrode connecting process from the lower side of the display substrate held by the holding frame 64 in order to destroy the buffer layer BF. It is preferable to irradiate the laser beam from above the LED wafer.

  When the first step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the front substrate mounting region in the figure by operating the moving means 43. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, the first display substrate 10A used in the first step is removed, and the holding frame 64 is removed. The second display substrate 10B on which no LED is arranged is placed on the stepped portion 64a with the side on which the electrode 124 is formed facing upward, and suction force is applied to the suction hole 64b for suction holding. To do. If the second display substrate 10B is sucked and held on the holding frame 64, the second display substrate 10B sucked and held on the holding frame 64 is imaged using the above-described imaging means 48, and the laser beam irradiation means 44 is collected. Alignment is performed to align the optical device 44a with the processing position of the second display substrate 10B.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. Then, the LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, the red LED wafer 20 held in the first step is taken out, and the green The LED wafer 22 is placed on the stepped portion 52 a of the wafer holding ring 52. As described above, when the green LED wafer 22 is held on the wafer holding ring 52, the orientation flat OF of the green LED wafer 22 is positioned and placed on the straight portion 52c of the wafer holding ring 52 as described above. By doing so, it is possible to accurately position the wafer holding ring 52 in a desired direction.

  When the green LED wafer 22 is placed on the stepped portion 52a, a suction means (not shown) is operated to bring the green LED wafer 22 into a suction holding state. When the green LED wafer 22 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 22b side of the green LED wafer 22 is exposed upward, and the direction is changed so that the front surface 22a on which the green LED 23 is formed faces downward. If the green LED wafer 22 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the second display substrate 10B held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. When the second display substrate 10B is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher by a predetermined amount than the height position of the second display substrate 10B is moved. Lower. At this time, as can be understood from FIG. 8A showing the positional relationship when the green LED wafer 22 and the second display substrate 10B are viewed from the side in the column direction, the green LED wafer 22 is replaced with the second LED substrate 22 as shown in FIG. The electrode on the green LED 23 side of the green LED wafer 20 faces the corresponding electrode 124b on the surface 10Ba of the second display substrate 10B by being lowered toward the surface 10Ba of the display substrate 10B. (LED wafer positioning step).

  By the LED wafer positioning step, the green LED 23 of the green LED wafer 22 is positioned on the electrode 124b of the second display substrate 10B, and the anode electrode and the cathode electrode on the green LED 23 side are the two electrodes of the second display substrate 10B. If it is made to contact | abut to 124b, an electrode connection process will be implemented similarly to the said 1st step (refer FIG.8 (c)). Note that the first step is the first step except that the LED to which the electrode is connected is the green LED 23 and that the electrode on the second display substrate 10B side to which the electrode of the green LED 23 is connected is the electrode 124b. Since this is the same as the electrode connecting step in step, detailed description is omitted. In this way, the laser beam LB1 is applied to the green LEDs 23 corresponding to all the electrodes 124b arranged in the column direction and the row direction of the second display substrate 10B, and the electrodes of the green LED 23 are applied to the second display substrate 10B. It connects with all the electrodes 124b (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 8D, the wavelength of the green LED wafer 22 is such that it has transparency to the epitaxy substrate 221 and absorbs to the buffer layer BF. The buffer layer BF of the green LED 23 positioned on the second display substrate 10B is irradiated with the laser beam LB2 to destroy the buffer layer BF, and the green LED 23 is peeled off from the epitaxy substrate 221 and disposed on the second display substrate 10B. The LED disposing step is performed. The LED disposing step is the same as the first step except that the target LED is the green LED 23, and therefore a detailed description thereof will be omitted. If the irradiation of the laser beam LB2 is performed on all the green LEDs 23 connected to the electrode 124b, the wafer holding ring 52 is raised (see FIG. 8E). As a result, the LED disposing step is completed, and the green LED 23 is disposed on each electrode 124b on the second display substrate 10B. The electrode connection process for disposing the green LED 23 on the second display substrate 10B and the LED disposition process are referred to as a “second step”.

  When the second step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the front substrate mounting region in the figure by operating the moving means 43. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, the second display substrate 10B provided with the green LED 23 is taken out, and the holding frame 64 is removed. The third display substrate 10C on which no LED is arranged is placed on the stepped portion 64a with the side where the electrode 124 is formed facing upward, and a suction means (not shown) is operated to suck the suction hole 64b. A suction force is applied to and held. If the third display substrate 10C is sucked and held on the holding frame 64, the third display substrate 10C sucked and held on the holding frame 64 is imaged using the above-described imaging means 48, and the laser beam irradiation means 44 is collected. Alignment for aligning the optical device 44a with the processing position of the third display substrate 10C is executed.

  Here, in this step, since the green LED wafer 22 held by the holding ring 52 in the second step is used as it is, the state shown in FIG. 8E is maintained. That is, the back surface 22b side of the green LED wafer 22 is exposed upward, and the front surface 22a on which the green LED 23 is formed is maintained facing downward. In this state, the moving means 43 is operated based on the position information obtained by executing the alignment, and the third display substrate 10 </ b> C held by the holding frame 64 is moved to the condenser 44 a and the wafer holding ring 52. Position directly below. When the third display substrate 10C is moved directly below the wafer holding ring 52, the wafer holding ring 52 maintained at a position higher by a predetermined amount than the height position of the third display substrate 10C is lowered. (See FIGS. 9A and 9B). The green LED 23 of the green LED wafer 22 is understood from FIG. 9 (a), which specifically shows the positional relationship when the green LED wafer 22 and the third display substrate 10C are viewed from the side in the column direction. Are already arranged on the second display substrate 10B every six, and are lowered toward the surface 10Ca of the third display substrate 10C, whereby the green LEDs 23 remaining on the green LED wafer 22 are removed. Among them, the electrode of the leftmost green LED 23 in the drawing is positioned so as to face and contact the corresponding leftmost electrode 124b on the surface 10Ba of the third display substrate 10C (LED wafer positioning step).

  Through the LED wafer positioning step, the green LED 23 of the green LED wafer 22 is positioned on the electrode 124b of the third display substrate 10C, and the anode electrode and the cathode electrode on the green LED 23 side are the two electrodes of the third display substrate 10C. If it is made to contact | abut to 124b, an electrode connection process will be implemented like a 2nd step (refer FIG.9 (c)). In addition, since it is the same as that of the electrode connection process of a 2nd step except the position of the green LED 23 to which an electrode is connected with respect to the said 2nd step, specific description is abbreviate | omitted. In this way, the laser beam LB1 is applied to the green LEDs 23 corresponding to all the electrodes 124b arranged in the column direction and the row direction of the third display substrate 10C, and the electrodes of the green LED 23 are applied to the third display substrate 10C. It connects with all the electrodes 124b (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 9 (d), the wavelength of the green LED wafer 22 is such that it has transparency to the epitaxy substrate 221 and absorbs to the buffer layer BF. The laser beam LB2 is irradiated to the buffer layer BF of the green LED 23 positioned on the second display substrate 10B to destroy the buffer layer BF, and the green LED 23 is peeled off from the epitaxy substrate 221 and disposed on the third display substrate 10C. An LED arrangement process is performed. In addition, since this LED arrangement | positioning process is the same as that of a 2nd step except the position of the green LED 23 used as object, specific description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed on all the green LEDs 23 connected to the electrode 124b on the third display substrate 10C side, the wafer holding ring 52 is raised (FIG. 9 ( See e).). As a result, the LED arrangement process is completed, and the green LED 23 is arranged on each electrode 124b on the third display substrate 10C. The electrode connecting step and the LED disposing step for disposing the green LED 23 on the third display substrate 10C are referred to as a “third step”. At this point, the second display substrate 10B obtained by the second step and the third display substrate 10C obtained by the third step have the same configuration.

  When the third step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, the third display substrate 10C is removed, and the step 64a of the holding frame 64 is The fourth display substrate 10D on which no LED is arranged is placed with the side where the electrode 124 is formed facing upward, and a suction means (not shown) is operated to apply a suction force to the suction hole 64b. Hold by suction. If the fourth display substrate 10D is sucked and held on the holding frame 64, the fourth display substrate 10D sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the collection of the laser beam irradiation means 44 is performed. Alignment is performed to align the optical device 44a with the processing position of the fourth display substrate 10D.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The green LED held when the LED wafer holding means 50 is in the state shown in FIG. 2B and the suction means acting on the wafer holding ring 52 is stopped and the third step is executed. The wafer 22 is taken out and a blue LED wafer 24 is placed.

  When the blue LED wafer 24 is placed on the stepped portion 52a, a suction unit (not shown) is operated to suck the blue LED wafer 24 by suction from the suction hole 52b. When the blue LED wafer 24 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 24b side of the blue LED wafer 24 is exposed upward, and the direction is changed so that the front surface 24a on which the blue LED 24 is formed faces downward. If the blue LED wafer 24 is rotated in this way, the moving means 43 is operated based on the positional information obtained by executing the alignment, and the fourth display substrate 10D held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the fourth display substrate 10D is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the fourth display substrate 10D by a predetermined amount is moved. Lower. At this time, the blue LED wafer 24 and the fourth display substrate 10D are seen from the side in the column direction, and as shown in FIGS. 10 (a) and 10 (b), the blue LED wafer is understood. 24 is lowered toward the surface 10Da of the fourth display substrate 10D, so that the electrodes on the blue LED 25 side of the blue LED wafer 24 face the corresponding electrodes 124c on the surface 10Da of the fourth display substrate 10D. It is positioned in contact (LED wafer positioning step).

  By the LED wafer positioning step, the blue LED 25 of the blue LED wafer 24 is positioned on the electrode 124c of the fourth display substrate 10D, and the anode electrode and the cathode electrode on the blue LED 25 side are the two electrodes of the fourth display substrate 10D. If it is made to contact | abut to 124c, an electrode connection process will be implemented like said each step (refer FIG.10 (c)). For each of the steps described above, the LED is connected to the blue LED 25, and the electrode on the fourth display substrate 10D to which the electrode of the blue LED 25 is connected is the electrode 124c. Since it is the same as the electrode connection process of each step, detailed description is abbreviate | omitted. In this way, the laser beam LB1 is applied to the blue LEDs 25 corresponding to all the electrodes 124c arranged in the column direction and the row direction of the fourth display substrate 10D, and the electrodes of the blue LED 25 are applied to the fourth display substrate 10D. It connects with all the electrodes 124c (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 10D, the wavelength of the blue LED wafer 24 is such that it is transmissive to the epitaxy substrate 241 and absorbs to the buffer layer BF. The laser beam LB2 is irradiated to the buffer layer BF of the blue LED 25 positioned on the fourth display substrate 10D to destroy the buffer layer BF, and the blue LED 25 is peeled off from the epitaxy substrate 241 and disposed on the fourth display substrate 10D. An LED arrangement process is performed. In addition, about this LED arrangement | positioning process, since the LED used as object is the blue LED25, it is the same as that of said each step, Therefore Detailed description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed for all the blue LEDs 25 connected to the electrode 124c on the fourth display substrate 10D side, the wafer holding ring 52 is raised (FIG. 10 ( See e).). Thereby, the LED arrangement process is completed, and the blue LEDs 25 are arranged on all the electrodes 124c on the fourth display substrate 10D. The electrode connection process for arranging the blue LED 25 on the fourth display substrate 10D and the LED arrangement process are referred to as a “fourth step”.

  When the fourth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, the fourth display substrate 10D is removed, and the stepped portion 64a of the holding frame 64 is In the first step, the first display substrate 10A on which the red LEDs 21 are arranged is placed, and a suction means (not shown) is operated to suck and hold the suction holes 64b by applying a suction force. If the first display substrate 10A is sucked and held on the holding frame 64, the first display substrate 10A sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the laser beam irradiation means 44 is collected. Alignment is performed to align the optical device 44a with the processing position of the first display substrate 10A.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. Then, the LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, and the blue color held when the fourth step is executed. The LED wafer 24 is taken out, and the green LED wafer 22 to which the green LED 23 is transferred in the second and third steps is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the green LED wafer 22 is placed on the stepped portion 52a, a suction means (not shown) is operated to suck the green LED wafer 22 from the suction hole 52b and bring the green LED wafer 22 into a suction holding state. When the green LED wafer 22 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 22b side of the green LED wafer 22 is exposed upward, and the direction is changed so that the front surface 22a on which the green LED 22 is formed faces downward. If the green LED wafer 22 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the first display substrate 10A held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the first display substrate 10A is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the first display substrate 10A by a predetermined amount is moved. Lower. At this time, as understood from FIGS. 11 (a) and 11 (b) that specifically show the positional relationship when the green LED wafer 22 and the first display substrate 10A are viewed from the side in the column direction, the green LED wafer is understood. 22, two rows of green LEDs 23 from the left, and two rows of green LEDs 23 are already transferred to the display substrate every four rows when viewed in the row direction. Therefore, the green LED 23 on the left side among the remaining four rows of green LEDs 23 is positioned so as to be in contact with the electrode 124b of the surface 10Aa of the first display substrate 10A, thereby lowering the green color of the green LED wafer 22. The electrode on the LED 23 side is positioned in a state where it faces and contacts the corresponding electrode 124b on the surface 10Aa of the first display substrate 10A (LED wafer positioning step).

  Through the LED wafer positioning step, the green LED 23 of the green LED wafer 22 is positioned on the electrode 124b of the first display substrate 10A, and the anode electrode and the cathode electrode on the green LED 23 side are the two electrodes of the first display substrate 10A. If it is made to contact | abut to 124b, an electrode connection process will be implemented like said each step (refer FIG.11 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the green LEDs 23 corresponding to all the electrodes 124b arranged in the column direction and the row direction of the first display substrate 10A, and the electrodes of the green LED 23 are applied to the first display substrate 10A. It connects with all the electrodes 124b (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 11 (d), the wavelength of the green LED wafer 23 is transmissive to the epitaxy substrate 221 and absorbs to the buffer layer BF. The buffer layer BF of the green LED 23 positioned on the first display substrate 10A is irradiated with the laser beam LB2 to destroy the buffer layer BF, and the green LED 23 is peeled off from the epitaxy substrate 221 and disposed on the first display substrate 10A. An LED arrangement process is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed on all the green LEDs 23 connected to the electrode 124b on the first display substrate 10A side, the wafer holding ring 52 is raised (FIG. 11 ( See e).). As a result, the LED disposing step is completed, and the green LEDs 23 are disposed on all the electrodes 124b on the first display substrate 10A. As a result, the red LED 21 and the green LED 23 are disposed on the first display substrate 10A. Is in a state of being disposed. The electrode connecting step and the LED disposing step for disposing the green LED 23 on the first display substrate 10A are referred to as “fifth step”.

  When the fifth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the first display substrate 10A is removed. Here, the display substrate mounted next on the stepped portion 64a of the holding frame 64 is the second display substrate 10B on which the green LED 23 is disposed in the second step or the third step described above, or One of the third display substrates 10C is selected and the one display substrate is placed. As described above, since the second and third display substrates 10B and 10C obtained by the second step and the third step have the same configuration, any one is selected. Therefore, in the present embodiment, the second display substrate 10B is selected as “one display substrate”, placed on the holding frame 64, the suction means is operated, and suction is applied to the suction holes 64b to perform suction. Hold. If the second display substrate 10B is sucked and held on the holding frame 64, the second display substrate 10B sucked and held on the holding frame 64 is imaged using the above-described imaging means 48, and the laser beam irradiation means 44 is collected. Alignment is performed to align the optical device 44a with the processing position of the second display substrate 10B.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The LED wafer holding means 50 is set to the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, and the green LED wafer 22 used in the fifth step is taken out. The blue LED wafer 24 held during the execution of step 4 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the blue LED wafer 24 is placed on the stepped portion 52a, a suction unit (not shown) is operated to suck the blue LED wafer 24 from the suction hole 52b. When the blue LED wafer 24 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 24b side of the blue LED wafer 24 is exposed upward, and the direction is changed so that the front surface 24a on which the blue LED 25 is formed faces downward. If the blue LED wafer 24 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the second display substrate 10B held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. When the second display substrate 10B is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher by a predetermined amount than the height position of the second display substrate 10B is moved. Lower. At this time, the blue LED wafer 24 and the second display substrate 10B are seen from the side in the column direction, and as shown in FIGS. 12A and 12C, the blue LED wafer is understood. Twenty-four blue LEDs 25 are already disposed on the fourth display substrate 10D every six in the fourth step, and the blue LEDs 25 are lowered toward the surface 10Ba of the second display substrate 10B. Of the blue LEDs 25 remaining on the LED wafer 24, the electrode of the leftmost blue LED 25 in the figure is positioned in a state where it faces and contacts the corresponding leftmost electrode 124c on the surface 10Ba of the second display substrate 10B ( LED wafer positioning step).

  By the LED wafer positioning step, the blue LED 25 of the blue LED wafer 24 is positioned on the electrode 124c of the second display substrate 10B, and the anode electrode and the cathode electrode on the blue LED 25 side are the two electrodes of the second display substrate 10B. If it is made to contact | abut to 124c, an electrode connection process will be implemented like said each step (refer FIG.12 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the blue LEDs 25 corresponding to all the electrodes 124c arranged in the column direction and the row direction of the second display substrate 10B, and the electrodes of the blue LED 25 are applied to the second display substrate 10B. It connects with all the electrodes 124c (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 12 (d), the wavelength of the blue LED wafer 24 is such that it is transparent to the epitaxy substrate 241 and absorbs to the buffer layer BF. The laser beam LB2 is irradiated to the buffer layer BF of the blue LED 25 positioned on the second display substrate 10B to destroy the buffer layer BF, and the blue LED 25 is peeled off from the epitaxy substrate 241 and disposed on the second display substrate 10B. An LED arrangement process is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed on all the blue LEDs 25 connected to the electrode 124c on the second display substrate 10B side, the wafer holding ring 52 is raised (FIG. 12 ( See e).). Thus, the LED disposing step is completed, and the blue LEDs 25 are disposed on all the electrodes 124c on the second display substrate 10B. As a result, the green LEDs 23 and the blue LEDs 25 are disposed on the second display substrate 10B. Is in a state of being disposed. The electrode connecting step and the LED disposing step for disposing the blue LED 25 on the second display substrate 10B are referred to as “sixth step”.

  When the sixth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the second display substrate 10A placed thereon is removed. Here, the display substrate mounted on the stepped portion 64a of the holding frame 64 is not selected from the second display substrate 10B and the third display substrate 10C in the sixth step. The third display substrate 10C is selected as “the other display substrate”, and the third display substrate 10C is placed thereon. When the third display substrate 10C is placed on the holding frame 64, the suction means is operated to suck and hold the suction holes 64b by applying a suction force. If the third display substrate 10C is selected instead of the second display substrate 10B in the sixth step, the second display substrate 10B is selected as the other display substrate in this step. Is done.

  If the third display substrate 10C is sucked and held on the holding frame 64, the third display substrate 10B sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the collection of the laser beam irradiation means 44 is performed. Alignment is performed to align the optical device 44a with the processing position of the second display substrate 10B.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, and the blue LED wafer 24 used in the sixth step is taken out. The red LED wafer 20 held during the execution of step 1 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the red LED wafer 20 is placed on the stepped portion 52a, a suction means (not shown) is operated to suck the red LED wafer 20 from the suction hole 52b and bring the red LED wafer 20 into a suction holding state. When the red LED wafer 20 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the rear surface 20b side of the red LED wafer 20 is exposed upward, and the direction is changed so that the front surface 20a on which the red LED 21 is formed faces downward. If the red LED wafer 20 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the third display substrate 10C held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the third display substrate 10C is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the third display substrate 10C by a predetermined amount. Lower. At this time, the red LED 21 of the red LED wafer 20 is understood as shown in FIG. 13A, which specifically shows the positional relationship when the red LED wafer 20 and the third display substrate 10C are viewed from the side in the column direction. Is after having already been disposed on the first display substrate 10A every six in the first step. That is, one row is skipped on the red LED wafer 20 and the red LEDs 21 remain in five rows. Here, since the green LED 23 is already arranged on the surface 10Ba of the third display substrate 10C corresponding to the electrode 124b, the leftmost red LED 21 of the red LED wafer 20 is the third display substrate 10C. Cannot be positioned on the leftmost electrode 124a. Therefore, among the leftmost five rows of red LEDs 21 remaining on the red LED wafer 20, the right red LED 21 is positioned on the leftmost electrode 124a of the third display substrate 10C as shown in FIG. . By lowering the wafer holding ring 52 in such a state, the red LED 21 remaining on the red LED wafer 20 corresponds to the surface 10Aa without overlapping with the green LED 23 already arranged on the third display substrate 10C. Each electrode 124a is positioned so as to face and contact each other (LED wafer positioning step).

  Through the LED wafer positioning step, the red LED 21 of the red LED wafer 20 is positioned on the electrode 124a of the third display substrate 10C, and the anode electrode and the cathode electrode on the red LED 21 side are the two electrodes of the third display substrate 10C. If it is made to contact | abut to 124a, an electrode connection process will be implemented like said each step (refer FIG.13 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the red LEDs 21 corresponding to all the electrodes 124a arranged in the column direction and the row direction of the third display substrate 10C, and the electrodes of the red LED 21 are applied to the third display substrate 10C. It connects with all the electrodes 124a (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 13 (d), the wavelength of the red LED wafer 20 is transmissive to the epitaxy substrate 201 and has absorption to the buffer layer BF. The laser beam LB2 is applied to the buffer layer BF of the red LED 21 positioned on the third display substrate 10C to destroy the buffer layer BF, and the red LED 21 is peeled off from the epitaxy substrate 201 and disposed on the third display substrate 10C. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed on all the red LEDs 21 connected to the electrode 124a on the third display substrate 10C side, the wafer holding ring 52 is raised (FIG. 13 ( See e).). As a result, the LED disposing step is completed, and the red LEDs 21 are disposed on all the electrodes 124a on the third display substrate 10C. As a result, the red LEDs 21 and the green LEDs 23 are disposed on the third display substrate 10C. It will be in the state where it was arranged. The electrode connecting step for arranging the red LED 21 on the third display substrate 10C and the LED arranging step are referred to as “seventh step”.

  When the seventh step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the third display substrate 10C placed thereon is removed. When the third display substrate 10C is removed, the fourth display substrate 10D used in the fourth step is placed. As described above, the blue LED 25 is already disposed on the electrode 124c of the fourth display substrate 10D. The fourth display substrate 10D is placed on the holding frame 64, the suction means is operated, and a suction force is applied to the suction hole 64b to hold it by suction.

  If the fourth display substrate 10D is sucked and held on the holding frame 64, the fourth display substrate 10D sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the collection of the laser beam irradiation means 44 is performed. Alignment is performed to align the optical device 44a with the processing position of the fourth display substrate 10D.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The LED wafer holding means 50 is set to the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, the red LED wafer 21 used in the seventh step is taken out, and the first The green LED wafer 22 used in step 5 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the green LED wafer 22 is placed on the stepped portion 52a, a suction means (not shown) is operated to suck the green LED wafer 22 from the suction hole 52b and bring the green LED wafer 22 into a suction holding state. When the green LED wafer 22 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 22b side of the green LED wafer 22 is exposed upward, and the direction is changed so that the front surface 22a on which the green LED 23 is formed faces downward. If the green LED wafer 22 is thus rotated, the moving means 43 is operated based on the position information obtained by executing the alignment, and the fourth display substrate 10D held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the fourth display substrate 10D is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the fourth display substrate 10D by a predetermined amount is moved. Lower. At this time, the green LED 23 of the green LED wafer 22 is understood as shown in FIG. Is after the first to third display substrates 10A to 10C have already been arranged in the second, third and fifth steps. That is, on the green LED wafer 22, three rows are skipped, and the green LED 23 remains in three rows. Here, since the blue LED 25 is already disposed on the surface 10Da of the fourth display substrate 10D corresponding to the electrode 124c, the leftmost green LED 23 of the green LED wafers 23 arranged in the three rows is arranged. It cannot be positioned as it is on the leftmost electrode 124b of the fourth display substrate 10D. Accordingly, among the leftmost three rows of green LEDs 23 remaining on the green LED wafer 22, the right green LED 23 is positioned above the leftmost electrode 124b of the fourth display substrate 10D as shown in FIG. Position. By lowering the wafer holding ring 52 in such a state (see FIG. 14B), the green LEDs 23 remaining on the green LED wafer 22 are made to correspond to each other on the surface 10Da of the fourth display substrate 10D. The electrode 124b can be positioned facing the electrode 124b (LED wafer positioning step).

  Through the LED wafer positioning step, the green LED 23 of the green LED wafer 22 is positioned on the electrode 124b of the fourth display substrate 10D, and the anode electrode and the cathode electrode on the green LED 23 side are the two electrodes of the fourth display substrate 10D. If it is made to contact | abut to 124b, an electrode connection process will be implemented like said each step (refer FIG.14 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the green LEDs 23 corresponding to all the electrodes 124b arranged in the column direction and the row direction of the fourth display substrate 10D, and the electrodes of the green LED 23 are applied to the fourth display substrate 10D. It connects with all the electrodes 124b (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 14 (d), the wavelength of the green LED wafer 22 is such that it has transparency to the epitaxy substrate 221 and absorbs to the buffer layer BF. The laser beam LB2 is applied to the buffer layer BF of the green LED 23 positioned on the fourth display substrate 10D to destroy the buffer layer BF, and the green LED 23 is peeled off from the epitaxy substrate 221 and disposed on the fourth display substrate 10D. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation with the laser beam LB2 is performed on all the green LEDs 23 connected to the electrode 124b on the fourth display substrate 10D side, the wafer holding ring 52 is raised (FIG. 14 ( See e).). As a result, the LED disposing step is completed, and the green LEDs 23 are disposed on all the electrodes 124b on the fourth display substrate 10D. As a result, the green LED 23 and the blue LED 25 are disposed on the fourth display substrate 10D. It will be in the state where it was arranged. The electrode connection process for arranging the green LED 23 and the LED arrangement process for the fourth display substrate 10D described above are referred to as an “eighth step”.

  When the eighth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the mounted fourth display substrate 10D is removed. If the fourth display substrate 10D is removed, the first display substrate 10A used in the fifth step is placed. As described above, the red LED 21 and the green LED 23 are already arranged on the electrodes 124a and 124b of the first display substrate 10A. The first display substrate 10A is placed on the holding frame 64, the suction means is operated, and the suction force is applied to the suction holes 64b to be sucked and held.

  If the first display substrate 10A is sucked and held on the holding frame 64, the first display substrate 10A sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the laser beam irradiation means 44 is collected. Alignment is performed to align the optical device 44a with the processing position of the first display substrate 10A.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. Then, the LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, and the green LED wafer 22 used in the eighth step is taken out, The blue LED wafer 24 used in step 6 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the blue LED wafer 24 is placed on the stepped portion 52a, a suction unit (not shown) is operated to suck the blue LED wafer 24 from the suction hole 52b. When the blue LED wafer 24 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the back surface 24b side of the blue LED wafer 24 is exposed upward, and the direction is changed so that the front surface 24a on which the blue LED 25 is formed faces downward. If the blue LED wafer 24 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the first display substrate 10A held on the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the first display substrate 10A is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the first display substrate 10A by a predetermined amount is moved. Lower. At this time, the blue LED 25 of the blue LED wafer 24 is understood as shown in FIG. 15A, which specifically shows the positional relationship when the blue LED wafer 24 and the first display substrate 10A are viewed from the side in the column direction. Is after the second and fourth display substrates 10B and 10D have already been disposed in the fourth and sixth steps. That is, two rows are skipped on the blue LED wafer 24, and the blue LEDs 25 remain in four rows. Here, the red LED 21 and the green LED 23 are already arranged on the surface 10Aa of the first display substrate 10A corresponding to the electrodes 124a and 124b. Therefore, among the leftmost four rows of blue LEDs 25 remaining on the blue LED wafer 24, the left blue LED 25 is positioned above the leftmost electrode 124c of the first display substrate 10A as shown in FIG. Position. By lowering the wafer holding ring 52 in such a state, the blue LED 25 remaining on the blue LED wafer 24 is brought into contact with and in contact with the corresponding electrode 124c on the surface 10Aa of the first display substrate 10A. It can be positioned (LED wafer positioning step).

  By the LED wafer positioning step, the blue LED 25 of the blue LED wafer 24 is positioned on the electrode 124c of the first display substrate 10A, and the anode electrode and the cathode electrode on the blue LED 25 side are the two electrodes of the first display substrate 10A. If it is made to contact | abut to 124c, an electrode connection process will be implemented like said each step (refer FIG.15 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the blue LEDs 25 corresponding to all the electrodes 124c arranged in the column direction and the row direction of the first display substrate 10A, and the electrodes of the blue LED 25 are applied to the first display substrate 10A. It connects with all the electrodes 124c (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 15D, the wavelength of the blue LED wafer 24 is transmissive to the epitaxy substrate 241 and absorbs to the buffer layer BF. The laser beam LB2 is applied to the buffer layer BF of the blue LED 25 positioned on the first display substrate 10A to destroy the buffer layer BF, and the blue LED 25 is peeled off from the epitaxy substrate 241 and disposed on the first display substrate 10A. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation with the laser beam LB2 is performed on all the blue LEDs 25 connected to the electrode 124c on the first display substrate 10A side, the wafer holding ring 52 is raised (FIG. 15 ( See e).). As a result, the LED disposing step is completed, and the blue LEDs 25 are disposed on all the electrodes 124c on the first display substrate 10A. As a result, the red LED 21, the green LED 23, And blue LED25 will be in the state arrange | positioned. That is, as is clear from FIG. 19 showing an enlarged portion 11a of the first display substrate 10A, predetermined LEDs are arranged on all of the electrodes 124a, 124b, and 124c of the first display substrate 10A. One display substrate 10A is completed as a display panel having LED light sources of three colors. The above-described electrode connection process for arranging the blue LED 25 on the first display substrate 10A and the LED arrangement process are referred to as a “ninth step”.

  When the ninth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the placed first display substrate 10A is removed. When the first display substrate 10A is removed, the second display substrate 10B used in the sixth step is placed. As described above, the green LED 23 and the blue LED 25 are already arranged on the electrodes 124b and 124c of the second display substrate 10B. The second display substrate 10B is placed on the holding frame 64, the suction means is operated, and the suction force is applied to the suction holes 64b to be sucked and held.

  If the second display substrate 10B is sucked and held on the holding frame 64, the second display substrate 10B sucked and held on the holding frame 64 is imaged using the above-described imaging means 48, and the laser beam irradiation means 44 is collected. Alignment is performed to align the optical device 44a with the processing position of the second display substrate 10B.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, the blue LED wafer 24 used in the ninth step is taken out, The red LED wafer 20 used in step 7 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the red LED wafer 20 is placed on the stepped portion 52a, a suction means (not shown) is operated to suck the red LED wafer 20 from the suction hole 52b and bring the red LED wafer 20 into a suction holding state. When the red LED wafer 20 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. Then, the rear surface 20b side of the red LED wafer 20 is exposed upward, and the direction is changed so that the front surface 20a on which the red LED 21 is formed faces downward. If the red LED wafer 20 is rotated in this way, the moving means 43 is operated based on the positional information obtained by executing the alignment, and the second display substrate 10B held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. When the second display substrate 10B is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher by a predetermined amount than the height position of the second display substrate 10B is moved. Lower. At this time, the red LED 21 of the red LED wafer 20 can be understood from FIG. 16 (a), which specifically shows the positional relationship when the red LED wafer 20 and the second display substrate 10B are viewed from the side in the column direction. Is after the first and third display substrates 10A and 10C have already been disposed. That is, on the red LED wafer 20, two rows are skipped and the red LEDs 21 remain in four rows. Here, since the green LED 23 and the blue LED 25 are already arranged on the surface 10Ba of the second display substrate 10B in correspondence with the electrodes 124b and 124c, the leftmost of the red LED wafers 20 arranged in the four rows. The red LED 21 cannot be positioned on the leftmost electrode 124a of the second display substrate 10B. Therefore, among the leftmost four rows of red LEDs 21 remaining on the red LED wafer 20, the right red LED 21 is positioned above the leftmost electrode 124a of the second display substrate 10B as shown in FIG. Position. By lowering the wafer holding ring 52 in such a state, the red LED 21 remaining on the red LED wafer 20 is brought into contact with and in contact with the corresponding electrodes 124a on the surface 10Ba of the second display substrate 10B. It can be positioned (LED wafer positioning step).

  In the LED wafer positioning step, the red LED 2 of the red LED wafer 20 is positioned on the electrode 124a of the second display substrate 10B, and the anode electrode and the cathode electrode on the red LED 21 side are the two electrodes of the second display substrate 10B. If it is made to contact | abut to 124a, an electrode connection process will be implemented like said each step (refer FIG.16 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the red LEDs 21 corresponding to all the electrodes 124a arranged in the column direction and the row direction of the second display substrate 10B, and the electrodes of the red LED 21 are applied to the second display substrate 10B. It connects with all the electrodes 124a (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 16D, the wavelength of the red LED wafer 20 is transmissive to the epitaxy substrate 201 and absorbs to the buffer layer BF. LED which irradiates the buffer layer BF of the red LED 21 positioned on the second display substrate 10B with the laser beam LB2 to break the buffer layer BF, peels the red LED 21 from the epitaxy substrate 201, and is disposed on the second display substrate 10B. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation with the laser beam LB2 is performed on all the red LEDs 21 connected to the electrode 124a on the second display substrate 10B side, the wafer holding ring 52 is raised (FIG. 16 ( See e).). Thus, the LED disposing step is completed, and the red LEDs 21 are disposed on all the electrodes 124a on the second display substrate 10B. As a result, the red LED 21, the green LED 23, And blue LED25 will be in the state arrange | positioned. That is, three-color LEDs are arranged on all the electrodes 124a, 124b, and 124c of the second display substrate 10B, and the second display substrate 10B is completed as a display panel having three-color LED light sources ( See FIG. The electrode connecting step for arranging the red LED 25 on the second display substrate 10B and the LED arranging step are referred to as “tenth step”.

  When the tenth step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the second display substrate 10B placed thereon is removed. When the second display substrate 10B is removed, the fourth display substrate 10D used in the eighth step is placed. As described above, the green LED 23 and the blue LED 25 are already arranged on the electrodes 124b and 124c of the fourth display substrate 10D. The fourth display substrate 10D is placed on the holding frame 64, the suction means is operated, and a suction force is applied to the suction hole 64b to hold it by suction.

  If the fourth display substrate 10D is sucked and held on the holding frame 64, the fourth display substrate 10D sucked and held on the holding frame 64 is imaged using the imaging means 48 described above, and the collection of the laser beam irradiation means 44 is performed. Alignment is performed to align the optical device 44a with the processing position of the fourth display substrate 10D.

  Here, in this step, since the red LED wafer 20 held in the holding ring 52 in the tenth step is used as it is, the red LED wafer 20 is not taken out from the holding ring 52, and the state shown in FIG. Maintained. That is, the back surface 20b side of the red LED wafer 20 is exposed upward, and the front surface 20a on which the red LED 21 is formed is maintained in a state of facing downward. In this state, the moving means 43 is operated based on the positional information obtained by executing the alignment, and the fourth display substrate 10D held by the holding frame 64 is collected by the condenser 44a and the wafer holding ring 52. Position directly below.

  If the fourth display substrate 10D is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher by a predetermined amount than the height position of the fourth display substrate 10D is lowered. . At this time, the red LED 21 of the red LED wafer 20 is understood as shown in FIG. 17A which specifically shows the positional relationship of the red LED wafer 20 and the fourth display substrate 10D as viewed from the side in the column direction. Is after the first to third display substrates 10A to 10C are already disposed in the first, seventh and tenth steps. That is, on the red LED wafer 20, three rows are skipped, and the red LED 21 remains in three rows. Here, since the green LED 23 and the blue LED 25 are already arranged on the surface 10Da of the fourth display substrate 10D corresponding to the electrodes 124b and 124c, the leftmost of the red LED wafers 20 arranged in the three rows. The red LED 21 cannot be positioned on the leftmost electrode 124a of the fourth display substrate 10D. Therefore, among the leftmost three rows of red LEDs 21 remaining on the red LED wafer 20, the right red LED 21 is positioned above the leftmost electrode 124a of the fourth display substrate 10D as shown in FIG. Position. By lowering the wafer holding ring 52 in such a state (see FIG. 17B), the red LEDs 21 remaining on the red LED wafer 20 correspond to the corresponding surfaces 10Ba of the fourth display substrate 10D. It can be positioned in a state where it faces the electrode 124a and abuts the already arranged LED without overlapping (LED wafer positioning step).

  By the LED wafer positioning step, the red LED 21 of the red LED wafer 20 is positioned on the electrode 124a of the fourth display substrate 10D, and the anode electrode and the cathode electrode on the red LED 21 side are the two electrodes of the fourth display substrate 10D. If it is made to contact | abut to 124a, an electrode connection process will be implemented like said each step (refer FIG.17 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the red LEDs 21 corresponding to all the electrodes 124a arranged in the column direction and the row direction of the fourth display substrate 10D, and the electrodes of the red LED 21 are applied to the fourth display substrate 10D. It connects with all the electrodes 124a (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 17 (d), the wavelength of the red LED wafer 20 is such that it has transparency to the epitaxy substrate 201 and absorbs to the buffer layer BF. The laser beam LB2 is applied to the buffer layer BF of the red LED 21 positioned on the fourth display substrate 10D to destroy the buffer layer BF, and the red LED 21 is peeled off from the epitaxy substrate 201 and disposed on the fourth display substrate 10D. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation of the laser beam LB2 is performed on all the red LEDs 21 connected to the electrode 124a on the fourth display substrate 10D side, the wafer holding ring 52 is raised (FIG. 17 ( See e).). Thereby, the LED disposing step is completed, and the red LEDs 21 are disposed on all the electrodes 124a on the fourth display substrate 10D. As a result, the red LED 21, the green LED 23, And blue LED25 will be in the state arrange | positioned. That is, three-color LEDs are arranged on all the electrodes 124a, 124b, and 124c of the fourth display substrate 10D, and the fourth display substrate 10D is completed as a display panel having three-color LED light sources ( See FIG. The electrode connecting step for arranging the red LED 21 and the LED arranging step for the fourth display substrate 10D described above are referred to as “eleventh step”.

  When the eleventh step is performed, the holding table 63 in the laser processing apparatus 40 is moved to the substrate mounting area on the near side in FIG. If the holding table 63 is moved to the position shown in FIG. 1, the suction means acting on the holding frame 64 is stopped, and the mounted fourth display substrate 10D is removed. When the fourth display substrate 10D is removed, the third display substrate 10C used in the seventh step is placed. As described above, the red LED 21 and the green LED 23 are already arranged on the electrodes 124a and 124b of the third display substrate 10C. The third display substrate 10C is placed on the holding frame 64, the suction means is operated, and the suction force is applied to the suction holes 64b to be sucked and held.

  If the third display substrate 10C is sucked and held on the holding frame 64, the third display substrate 10C sucked and held on the holding frame 64 is imaged using the above-described imaging means 48, and the laser beam irradiation means 44 is collected. Alignment for aligning the optical device 44a with the processing position of the third display substrate 10C is executed.

  When the alignment is completed by performing the alignment, the wafer holding ring 52 is moved upward by a command from a control means (not shown) and further rotated in the direction indicated by the arrow 54a in FIG. The LED wafer holding means 50 is brought into the state shown in FIG. 2B, the suction means acting on the wafer holding ring 52 is stopped, and the red LED wafer 20 used in the eleventh step is taken out. The blue LED wafer 24 used in step 9 is placed on the stepped portion 52 a of the wafer holding ring 52.

  When the blue LED wafer 24 is placed on the stepped portion 52a, a suction unit (not shown) is operated to suck the blue LED wafer 24 from the suction hole 52b. When the blue LED wafer 24 is sucked and held by the wafer holding ring 52, the driving means of the holding base 56 is operated to rotate the wafer holding ring 52 by 180 ° in the direction of the arrow 54a in the drawing as shown in FIG. The rear surface 20b side of the blue LED wafer 24 is exposed upward, and the direction is changed so that the front surface 24a on which the blue LED 25 is formed faces downward. If the blue LED wafer 24 is rotated in this way, the moving means 43 is operated based on the position information obtained by executing the alignment, and the third display substrate 10C held by the holding frame 64 is moved. It is positioned directly under the condenser 44a and the wafer holding ring 52. Then, if the third display substrate 10C is moved directly below the wafer holding ring 52, the wafer holding ring 52 moved to a position higher than the height position of the third display substrate 10C by a predetermined amount. Lower. At this time, the blue LED 25 of the blue LED wafer 24 is understood as shown in FIG. 18A, which specifically shows the positional relationship of the blue LED wafer 24 and the third display substrate 10C as viewed from the side in the column direction. Is after the first, second and fourth display substrates 10A, 10B and 10D have already been disposed in the fourth, sixth and ninth steps. That is, three rows are skipped on the blue LED wafer 24, and the blue LEDs 25 remain in three rows. Here, the red LED 21 and the green LED 23 are already arranged on the surface 10Ca of the third display substrate 10C corresponding to the electrodes 124a and 124b, and the leftmost of the blue LED wafers 24 arranged in the three rows. The blue LED 25 can be positioned on the leftmost electrode 124a of the third display substrate 10C. Therefore, among the three rows of blue LEDs 25 remaining on the blue LED wafer 24, the left blue LED 25 is positioned above the leftmost electrode 124a of the third display substrate 10C, as shown in FIG. By lowering the wafer holding ring 52 in this state (see FIG. 18B), the blue LEDs 25 remaining on the blue LED wafer 24 correspond to the respective surfaces 10Ca of the third display substrate 10C. It can be positioned in a state where it faces the electrode 124c and abuts on the already disposed LED without overlapping (LED wafer positioning step).

  By the LED wafer positioning step, the blue LED 25 of the blue LED wafer 24 is positioned on the electrode 124c of the third display substrate 10C, and the anode electrode and the cathode electrode on the blue LED 25 side are the two electrodes of the third display substrate 10C. If it is made to contact | abut to 124c, an electrode connection process will be implemented like said each step (refer FIG.18 (c)). In addition, since the specific procedure of an electrode connection process is the same as the electrode connection process of each said step, it abbreviate | omits about specific description. In this way, the laser beam LB1 is applied to the blue LEDs 25 corresponding to all the electrodes 124c arranged in the column direction and the row direction of the third display substrate 10C, and the electrodes of the blue LED 25 are applied to the third display substrate 10C. It connects with all the electrodes 124c (electrode connection process).

  When the electrode connecting step is completed, as shown in FIG. 18 (d), the wavelength of the blue LED wafer 24 is such that it is transparent to the epitaxy substrate 241 and absorbs to the buffer layer BF. The laser beam LB2 is irradiated on the buffer layer BF of the blue LED 25 positioned on the third display substrate 10C to destroy the buffer layer BF, and the blue LED 25 is peeled off from the epitaxy substrate 241 and disposed on the third display substrate 10C. An arrangement step is performed. In addition, since it is the same as said each step also about this LED arrangement | positioning process, detailed description is abbreviate | omitted. If such irradiation with the laser beam LB2 is performed on all the blue LEDs 25 connected to the electrode 124c on the third display substrate 10C side, the wafer holding ring 52 is raised (FIG. 18 ( See e).). Thus, the LED disposing step is completed, and the blue LEDs 25 are disposed on all the electrodes 124c on the third display substrate 10C. As a result, the red LED 21, the green LED 23, And blue LED25 will be in the state arrange | positioned. That is, three-color LEDs are arranged on all the electrodes 124a, 124b, and 124c of the third display substrate 10C, and the third display substrate 10C is completed as a display panel having three-color LED light sources ( See FIG. The electrode connecting step for arranging the blue LED 25 on the third display substrate 10C and the LED arranging step are referred to as a “twelfth step”.

  According to the above-described embodiment, four display panels having three color LED light sources can be efficiently manufactured by sequentially executing the first to twelfth steps. Furthermore, although LEDs of each color remain in two rows on the red LED wafer 20, the green LED wafer 22, and the blue LED wafer 24, these can be used for manufacturing a separate display panel.

  The present invention is not limited to the above-described embodiments, and various modifications can be assumed as long as they are included in the technical scope of the present invention.

  In the above-described embodiment, an example in which a display panel having three color LED light sources is manufactured has been shown. However, the present invention is not limited to this, and only one color, only two colors, or four or more color LED light sources are provided. It may be a method of manufacturing a display panel. When manufacturing a display panel equipped with a single color LED light source, only the first step, only the second step, or only the fourth step of the first to twelfth steps described above is executed. There may be.

  When manufacturing a display panel having two color LED light sources, for example, a red LED and a green LED, the red LED wafer 20, the green LED wafer 22, the first display substrate 10A, and the second display substrate 10B are provided. After the preparation, the first step is executed as “A step” (see FIG. 6), and then the second step is executed as “B step” (see FIG. 8). Then, the fifth step is executed as the “C step” using the green wafer 22 which has been subjected to the B step as it is, and then the seventh step is performed using the second display substrate 10B used in the B step as it is. Is executed as a “D step”, so that a red LED 21 and a green LED 23, that is, a disk equipped with a two-color LED light source. Repaneru it is possible to manufacture two.

  In the above-described embodiment, the first LED is a red LED, the second LED is a green LED, and the third LED is a blue LED. However, the present invention is not limited to this, and the first to third LEDs are not limited thereto. Any color LED light source may be assigned to the light source.

  In the above-described embodiment, a plurality of three sets of electrodes 124a, 124b, and 124d in which a red LED, a green LED, and a blue LED are arranged on the display substrate are set, and the dimension between the three sets of adjacent electrodes is just Although the dimensions corresponding to the electrodes corresponding to the three LEDs are set, the present invention is not limited thereto, and the interval can be arbitrarily set. Even in this case, it is preferable that the dimension between three adjacent electrodes is an integer multiple of the dimension when one LED is provided. In addition, if the interval in which the LEDs are arranged on the display substrate side and the interval in which the LEDs are arranged on the LED wafer side are matched, when the LED wafer is brought into contact with the display substrate by the LED positioning step, All the electrodes on the LED side corresponding to the electrodes on the display substrate side can be brought into contact at the same time.

  In the above-described embodiment, the LED disposing step is performed after performing the electrode connecting step, but the present invention is not necessarily limited to this, and both are performed simultaneously or before and after. It does not exclude doing.

  In the above-described embodiment, there is one LED wafer that can be held by the wafer holding ring 52, and there is also one display substrate that can be held by the holding table 63. However, for example, four holding frames are installed on the holding table 63 so that four display substrates can be held, and the LED wafer holding means 50 can hold the three wafers simultaneously. If the three wafer holding rings 52 are prepared and can be automatically switched, the replacement required in each step can be omitted.

10A: first display substrate 10B: second display substrate 10C: third display substrate 10D: fourth display substrate 20: red LED wafer 21: red LED
22: Green LED wafer 23: Green LED
24: Blue LED wafer 25: Blue LED
40: Laser processing apparatus 42: Holding means 43: Moving means 44: Laser beam irradiation means 45: Frame 48: Imaging means 50: LED wafer holding means 52: Wafer holding ring 52a: Step portion 52b: Suction hole 54: Holding arm 56 : Holding base 58: Opening 63: Holding table 64: Holding frame 80: X direction moving means 82: Y direction moving means 124a, 124b, 124c: Electrodes

Claims (6)

An LED display panel manufacturing method for manufacturing an LED display panel,
An LED wafer preparation step of preparing an LED wafer having a plurality of LEDs which are partitioned by a division line and provided on the surface of the epitaxy substrate via a buffer layer;
A display substrate preparing step of preparing a display substrate in which a plurality of electrodes are arranged in rows and columns;
An LED wafer positioning step for positioning the LED wafer facing the electrode of the display substrate;
An electrode for connecting the LED electrode and the corresponding electrode of the display substrate by irradiating the LED substrate with the laser beam having a wavelength that is transparent to the display substrate or the LED wafer faced by the LED wafer positioning step A connecting step;
A laser beam having a wavelength transparent to the display substrate or the LED wafer is irradiated to the buffer layer of the LED positioned on the display substrate to break the buffer layer, and the LED is peeled off from the epitaxy substrate and disposed on the display substrate. LED placement process;
The manufacturing method of the LED display panel comprised at least. An LED display panel manufacturing method for manufacturing an LED display panel,
A first LED wafer having a plurality of first LEDs on the surface of the epitaxy substrate, which is defined by the division lines, and a second layer via the buffer layer on the surface of the epitaxy substrate, which is defined by the division lines. An LED wafer preparation step of preparing at least a second LED wafer having a plurality of LEDs;
A display substrate preparing step of preparing a display substrate in which a plurality of electrodes are arranged in rows and columns;
LED wafer positioning step for positioning the LED wafer of either the first LED wafer or the second LED wafer so as to correspond to the electrodes of the display substrate,
An electrode that connects the electrode of the LED and the electrode of the display substrate corresponding to the LED electrode by irradiating a laser beam having a wavelength that is transparent to the display substrate or the LED wafer faced by the LED wafer positioning step A connecting step;
A laser beam having a wavelength that is transparent to the display substrate or the LED wafer is irradiated to the buffer layer of the LED positioned on the display substrate to destroy the buffer layer, and the LED is peeled off from the epitaxy substrate to form the first LED, LED disposing step of disposing the second LED on the display substrate;
The manufacturing method of the LED display panel comprised at least. The display substrate includes at least a first display substrate and a second display substrate,
In the electrode connecting step,
The surface of the first LED wafer faces the surface of the first display substrate, and the electrodes of the first LED corresponding to the electrodes arranged in rows and columns of the first display substrate with a predetermined interval Positioning the electrode on the first display substrate and irradiating a laser beam having transparency to the first display substrate or the first LED wafer, the electrode of the first LED and the electrode of the first display substrate are A step of arranging the first LED on the first display substrate by performing the LED arranging step,
The surface of the second LED wafer faces the surface of the second display substrate, and the electrodes of the second LED corresponding to the electrodes arranged in rows and columns of the second display substrate with a predetermined interval are provided Positioning the electrode on the second display substrate and irradiating a laser beam having transparency to the second display substrate or the second LED wafer, the electrode of the second LED and the electrode of the second display substrate are formed. And B step of performing the LED disposing step and disposing the second LED on the second display substrate,
In the step A, the second LED wafer used in the step B is made to face the surface of the first display substrate on which the first LEDs are arranged at a predetermined interval. A second LED electrode corresponding to the electrodes arranged in a row is positioned on the first display substrate and irradiated with a laser beam having transparency to the first display substrate or the second LED wafer. And connecting the electrode of the second LED and the electrode of the first display substrate and performing the LED disposing step to dispose the second LED on the first display substrate;
In the B step, the first LED wafer used in the A step is made to face the surface of the second display substrate on which the second LEDs are arranged at a predetermined interval, and the second display substrate row at a predetermined interval. The first LED electrode corresponding to the electrode arranged in a row is positioned on the electrode of the second display substrate, and a laser beam having transparency to the second display substrate or the first LED wafer is irradiated. D step of connecting the electrode of the first LED and the electrode of the second display substrate and performing the LED disposing step to dispose the first LED on the second display substrate;
The manufacturing method of the LED display panel of Claim 2 comprised at least. The display substrate includes at least a first display substrate, a second display substrate, a third display substrate, and a fourth display substrate,
In the electrode connecting step,
The surface of the first LED wafer faces the surface of the first display substrate, and the electrodes of the first LED corresponding to the electrodes arranged in rows and columns of the first display substrate with a predetermined interval Positioning the electrode on the first display substrate and irradiating a laser beam having transparency to the first display substrate or the first LED wafer, the electrode of the first LED and the electrode of the first display substrate are A first step of connecting and implementing the LED disposition step to dispose the first LED on the first display substrate;
The surface of the second LED wafer faces the surface of the second display substrate, and the electrodes of the second LED corresponding to the electrodes arranged in rows and columns of the second display substrate with a predetermined interval are provided An electrode of the second LED and an electrode of the second display substrate are irradiated with a laser beam which is positioned on the electrode of the second display substrate and is transmissive to the second display substrate or the second LED wafer. And the second step of disposing the second LED on the second display substrate by performing the LED disposing step;
The surface of the second LED wafer used in the second step is made to face the surface of the third display substrate, and corresponds to the electrodes arranged in rows and columns of the third display substrate with a predetermined interval. The electrode of the second LED is positioned on the electrode of the third display substrate and irradiated with a laser beam having transparency to the third display substrate or the second LED wafer. And a third step of connecting the electrode of the third display substrate to the third display substrate and performing the LED disposing step to dispose the second LED on the third display substrate;
The surface of the third LED wafer is opposed to the surface of the fourth display substrate, and the electrodes of the third LED corresponding to the electrodes arranged in the rows and columns of the fourth display substrate with a predetermined interval are provided. A third LED electrode and an electrode of the fourth display substrate are irradiated with a laser beam that is positioned on the electrode of the fourth display substrate and is transmissive to the fourth display substrate or the third LED wafer. And a fourth step of performing the LED disposing step to dispose a third LED on the fourth display substrate;
In the first step, the second LED wafer used in the third step is faced to the surface of the first display substrate on which the first LEDs are arranged at a predetermined interval, and the first LED is formed at a predetermined interval. The electrode of the second LED corresponding to the electrode arranged in the row and column of the display substrate is positioned on the electrode of the first display substrate and is transparent to the first display substrate or the second LED wafer. The electrode of the second LED and the electrode of the first display substrate are connected by irradiating a laser beam having the above, and the second LED is disposed on the first display substrate by performing the LED disposing step. A fifth step;
In the second step or the third step, one of the second display substrate and the third display substrate in which the second LEDs are arranged at a predetermined interval is selected and selected. The third LED wafer used in the fourth step faces the surface of one display substrate, and the electrodes of the third LED are positioned on the electrodes arranged in the rows and columns of the one display substrate with a predetermined interval. And irradiating a laser beam having transparency to the one display substrate or the third LED wafer to connect the electrode of the third LED and the electrode of the one display substrate, and A sixth step of performing and disposing a third LED on the one display substrate;
The second LED that was not selected in the sixth step is placed on the surface of the other display substrate on which the second LED is arranged at a predetermined interval, and the first LED wafer used in the first step is made to face the predetermined LED. The electrode of the first LED is positioned on the electrode arranged in the row and column of the other display substrate, and the first display wafer or the first LED wafer is irradiated with a laser beam having transparency. A seventh step of connecting the electrode of the LED to the electrode of the other display substrate and performing the LED disposing step to dispose the first LED on the other display substrate;
In the fourth step, the second LED wafer used in the fifth step is opposed to the surface of the fourth display substrate on which the third LEDs are arranged at a predetermined interval, and the second LED wafer used in the fifth step is opposed to the second LED wafer. The electrodes of the second LED are positioned on the electrodes arranged in the rows and columns of the fourth display substrate, and the second display substrate or the second LED wafer is irradiated with a laser beam having transparency. And connecting the electrode of the LED and the electrode of the fourth display substrate, and performing the LED disposing step to dispose the second LED on the fourth display substrate,
In the fifth step, the third LED wafer used in the sixth step is opposed to the first display substrate on which the first LED and the second LED are arranged, and the first LED is disposed at a predetermined interval. A third LED electrode is positioned on the electrodes arranged in the rows and columns of the display substrate, and a third laser beam is applied to the first display substrate or the third LED wafer. A ninth step of connecting the electrode of the LED and the electrode of the first display substrate and performing the LED disposition step to dispose a third LED on the first display substrate;
The first LED wafer used in the seventh step is made to face the one display substrate in the sixth step in which the second LED and the third LED are arranged, and the one display is provided at a predetermined interval. The electrodes of the first LED are positioned on the electrodes arranged in the rows and columns of the substrate and irradiated with a laser beam having transparency to the one display substrate or the first LED wafer. And an electrode of the one display substrate, and a tenth step of performing the LED disposing step to dispose a third LED on the one display substrate;
In the eighth step, the first LED wafer used in the tenth step is opposed to the fourth display substrate on which the second LED and the third LED are arranged, and the first LED wafer used in the tenth step is opposed to the fourth LED. The electrodes of the first LED are positioned on the electrodes arranged in the rows and columns of the fourth display substrate, and the first display wafer or the first LED wafer is irradiated with a laser beam having transparency. An eleventh step of connecting the electrode of the LED and the electrode of the fourth display substrate and performing the LED disposing step to dispose the first LED on the fourth display substrate;
A third LED wafer used in the ninth step is made to face the other display substrate in the seventh step in which the second LED and the first LED are arranged, and the other display is provided at a predetermined interval. The electrode of the third LED is positioned on the electrode arranged in the row and column of the substrate, and the third LED electrode is irradiated with a laser beam having transparency to the other display substrate or the third LED wafer. And the electrode of the other display substrate, and a twelfth step of performing the LED disposing step to dispose a third LED on the other display substrate;
The manufacturing method of the LED display panel of Claim 2 comprised at least.   The method of manufacturing an LED display panel according to claim 4, wherein the first LED emits red, the second LED emits green, and the third LED emits blue. In the electrode connection structure, a laser beam having a wavelength transmissive to the display substrate is irradiated from the back side of the display substrate to connect the LED electrode and the corresponding display substrate electrode,
In the LED placement process, a laser beam having a wavelength transmissive to the LED wafer is irradiated from the back surface of the LED wafer to the LED buffer layer positioned on the display substrate to break the buffer layer and peel the LED from the epitaxy substrate. The method for manufacturing an LED display panel according to claim 1, wherein the LEDs are arranged on a display substrate.