JP2018186257A - Method for manufacturing optical component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture an optical component having reduced absorption of light from a light-emitting element or the like in a simple and convenient manner.SOLUTION: A method for manufacturing an optical component for an optical semiconductor according to an embodiment comprises the steps of: preparing an assembly in which a first member and a second member 2 are joined to each other through a metal connecting member 3 by directly bonding together a first metal film 3a formed on the translucent first member having at least one of oxygen, fluorine and nitrogen, and a second metal film 3b formed on the translucent or non-translucent second member 2; and applying a laser beam to the connecting member 3 or applying a microwave to the connecting member 3, thereby making a transmittance of the connecting member 3 for light of a predetermined wavelength higher than a transmittance in its original state.SELECTED DRAWING: Figure 2A

Description

  The present invention relates to a method for manufacturing an optical component for an optical semiconductor.

  As in the LED element described in Patent Document 1, a light-transmitting member and a light-emitting element may be joined (for example, see FIG. 11).

JP2011-233939A

  In Patent Document 1, the translucent member and the light emitting element are joined by thermocompression bonding. In addition, as a method of joining the light-transmitting member and the light emitting element, for example, a method of joining the two through a resin or a method of directly joining the two by a surface activated joining method can be considered. However, when both are joined by thermocompression bonding, since relatively high-temperature heat is applied to each member, each member may be damaged. Moreover, when joining both through resin, there exists a possibility that a characteristic may fall as an optical component by the deterioration of the resin by light absorption by resin and long-time use. Furthermore, when both are joined by the surface activated activation method, it may be difficult to join depending on the surface state of each member and the material of each member.

  According to one aspect of the present invention, there is provided a method for manufacturing an optical component for an optical semiconductor, comprising: a first metal film formed on a light-transmitting first member having at least one of oxygen, fluorine, and nitrogen; The first member and the second member are bonded via a bonding member made of metal by directly bonding the second metal film formed on the light-transmissive or non-light-transmissive second member. A step of preparing a joined body, and irradiating the joining member with laser light or irradiating the joining member with microwaves, thereby making the transmittance of the joining member with respect to light of a predetermined wavelength from the original transmittance. And a step of increasing the height.

  Thereby, the optical component which reduced that the light from a light emitting element etc. is absorbed by a joining member can be manufactured simply.

FIG. 1A is a diagram for explaining a method of manufacturing an optical component according to the first embodiment. FIG. 1B is a view for explaining the method of manufacturing the optical component according to the first embodiment. FIG. 1C is a view for explaining the method of manufacturing the optical component according to the first embodiment. FIG. 2A is a cross-sectional view of an optical component obtained by the optical component manufacturing method of the first embodiment. FIG. 2B is a top view of the joining member included in the optical component of the first embodiment. FIG. 3A is a diagram for explaining a method of manufacturing an optical component according to the second embodiment. FIG. 3B is a view for explaining the method of manufacturing the optical component according to the second embodiment. FIG. 3C is a view for explaining the method of manufacturing the optical component according to the second embodiment. FIG. 4A is a cross-sectional view of an optical component obtained by the optical component manufacturing method of the second embodiment. FIG. 4B is a top view of the joining member included in the optical component of the second embodiment. FIG. 5 is a diagram of a light emitting device in which an optical component and a light emitting element according to the second embodiment are combined. FIG. 6A is a cross-sectional view of an optical component obtained by the method for manufacturing an optical component according to the third embodiment. FIG. 6B is a top view of the joining member included in the optical component of the third embodiment. FIG. 7 is a diagram of a light-emitting device that combines an optical component and a light-emitting element according to the third embodiment. FIG. 8A is a diagram for explaining the method of manufacturing the optical component according to the example. FIG. 8B is a diagram for explaining the method of manufacturing the optical component according to the example. FIG. 8C is a diagram for explaining the method of manufacturing the optical component according to the example. FIG. 9A is a cross-sectional view of an optical component obtained by the optical component manufacturing method according to the example. FIG. 9B is a top view of the joining member included in the optical component according to the example. FIG. 10 is a photograph of the optical component obtained by the optical component manufacturing method according to the example observed from the upper surface side. FIG. 11 is an analysis result of the joined body according to the example. FIG. 12 is an analysis result of the optical component according to the example. FIG. 13 is an analysis result of the joined body according to the example. FIG. 14 is an analysis result of the optical component according to the example. FIG. 15A is a scanning transmission electron microscope view in the vicinity of a bonding member of a bonded body according to another example. FIG. 15B is an analysis result in the vicinity of the joining member in another example. FIG. 16A is a loss spectrum diagram of a joining member in another example. FIG. 16B is a diagram showing a loss spectrum of TiO. FIG. 16C is a diagram showing a loss spectrum of rutile TiO ₂ .

  A mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below is for embodying the technical idea of the present invention, and does not limit the present invention. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation.

<First Embodiment>
1A to 1C show a method for manufacturing the optical component 10 according to the first embodiment. FIG. 2A is a cross-sectional view of the optical component 10 obtained by the present embodiment, and FIG. 2B is a top view of the joining member 3 included in the optical component 10. In FIG. 2B, a hatched region X is a region having a high transmittance for light of a predetermined wavelength.

  The manufacturing method of the optical component 10 includes: a first metal film 3a formed on the light-transmissive first member 1 having oxygen; and a second metal film 3b formed on the light-transmissive second member 2. A step of preparing a joined body in which the first member 1 and the second member 2 are joined via the joining member 3 made of metal by directly bonding together, and by irradiating the joining member 3 with laser light, predetermined And a step of making the transmittance of the bonding member 3 with respect to the light of the wavelength higher than the transmittance of the original state.

  According to the method for manufacturing the optical component 10, the optical component 10 in which light having a predetermined wavelength emitted from a light emitting element or the like is reduced from being absorbed by the bonding member 3 can be easily manufactured.

  In a joined body in which the first member and the second member are joined via a joining member made of metal, light from the light emitting element or the like is absorbed by the joining member, so that the light extraction efficiency is lowered. Therefore, in this embodiment, after preparing the joined body, the joining member 3 made of metal contained in the joined body is irradiated with laser light. Thereby, the transmittance | permeability of the joining member 3 with respect to the light of the predetermined wavelength after irradiating a laser beam is made higher than the transmittance | permeability of the joining member 3 with respect to the light of the predetermined wavelength before irradiating a laser beam. This is considered to occur for the reason described below. The joining member 3 is heated by irradiating the joining member 3 with laser light. At this time, oxygen contained in the first member 1 is bonded to the metal of the bonding member 3. As a result, in the region irradiated with the laser light, the bonding member 3 changes from a metal to a compound containing oxygen, and thus it is considered that the transmittance for light of a predetermined wavelength is high.

  In this specification, the “transmittance of the bonding member 3” refers to a ratio of transmitting light from a light emitting element or the like. For example, when a semiconductor light emitting element is included in a part of the optical component (that is, when the first member and the translucent second member included in the light emitting element are bonded), “the transmittance of the bonding member 3” The ratio which transmits the light of the peak wavelength of the light emitting element containing the 2nd member 2 is pointed out. Further, when a light emitting element is not included in a part of the optical component (that is, when the optical component and the light emitting element are combined to form a light emitting device), the “transmittance of the bonding member 3” is light emission combined with the optical component. The ratio of transmitting light of the peak wavelength of the element.

  Below, the manufacturing method of the optical component 10 is explained in full detail.

(Step of preparing the joined body)
First, as shown in FIG. 1A, a first metal film 3a is formed on a light-transmissive first member 1 containing oxygen, and a second metal film 3b is formed on a light-transmissive second member 2. Then, as shown in FIG. 1B, the first member 1 and the second member 2 are bonded via the bonding member 3 made of metal by directly bonding the first metal film 3a and the second metal film 3b together. Prepare a bonded assembly. Specifically, in this embodiment, a sapphire substrate is used as the first member 1, and a sapphire substrate included in the light emitting element 6 is used as the second member 2.

  In the present embodiment, a bonded body is prepared using an atomic diffusion bonding method. Specifically, the formation of the first metal film 3a, the formation of the second metal film 3b, and the bonding of the first metal film 3a and the second metal film 3b are performed in an ultra-high vacuum. Thereby, since it is not necessary to heat the 1st member 1 and the 2nd member 2 excessively at the time of joining of the 1st metal film 3a and the 2nd metal film 3b, the 1st member 1 and the 2nd member 2 by the heat at the time of joining are carried out. Can be prevented. Moreover, it can suppress that the substance contained in air | atmosphere adheres to the lower surface of the 1st metal film 3a, and the upper surface of the 2nd metal film 3b. That is, it is possible to prevent substances other than the first metal film 3a and the second metal film 3b from entering between the first metal film 3a and the second metal film 3b. Thereby, the joining force between the 1st metal film 3a and the 2nd metal film 3b can be made high. Further, since no extra material enters between the first metal film 3a and the second metal film 3b, light absorption can be easily suppressed. The first metal film 3a and the second metal film 3b are formed by a known method such as a sputtering method, and then the surface of each metal film is activated by using a surface activated bonding method to thereby form the first metal film. The film 3a and the second metal film 3b may be bonded together. Even when the surface activated bonding method is used, the first member 1 and the second member can be bonded to each other without excessively heating the first member 1 and the second member 2. 2 deterioration can be prevented.

  Here, the first member 1 containing oxygen is used as the first member 1, but at least one of oxygen, fluorine, and nitrogen (hereinafter also referred to as “oxygen or the like”) is used as the first member 1. The member which has can be used. In the case of using these members, similarly to the case of using a member containing oxygen, the transmittance with respect to the wavelength of the predetermined light can be increased by irradiating the laser beam.

  As the first member 1, a laser that is a heating source and a material that does not absorb microwaves can be used. In addition to the sapphire substrate, for example, a glass plate, a phosphor-containing plate containing a phosphor, and a lens can be used. As a fluorescent substance containing board, you may use what contains a fluorescent substance as a whole, and as shown to FIG. 4A etc., the side surface of the fluorescent part 1a so that the fluorescent part 1a containing a fluorescent substance and the fluorescent part 1a may be surrounded It is also possible to use one including the light reflecting portion 1b provided in the. Thus, even if the non-translucent region (in FIG. 4A, the light reflecting portion 1b) is included in a part of the first member 1, the translucent region (FIG. 4A) is included in a part of the first member. Then, if the fluorescent portion 1a) is included, it is included in the first member 1 of the present specification. As the phosphor contained in the phosphor-containing plate, a material containing a known phosphor such as a YAG phosphor or a LAG phosphor can be used. Moreover, as the light reflection part 1b, ceramics containing aluminum oxide can be used, for example.

  As the second member 2, it is preferable to use a material containing a material having at least one of oxygen, fluorine, and nitrogen in a region where the second metal film 3 b of the second member 2 is formed. Thereby, since oxygen etc. contained not only in the first member 1 but also in the second member 2 can be bonded to the metal of the bonding member 3, the transmittance of the bonding member 3 can be easily increased.

  In the present embodiment, a light emitting diode (LED) including a substrate and the light emitting structure 4 is used as the light emitting element 6. And the sapphire substrate located in the light emission surface side of LED is made into the 2nd member 2, and the 2nd metal film 3b is formed in the main surface different from the main surface in which the light emission structure 4 of a sapphire substrate is provided. Thereby, oxygen contained in the sapphire substrate can be bonded to the bonding member 3. In addition, since the light absorption at the electrode 5 can be reduced, the light extraction efficiency as the optical component 10 can be expected to be improved. This point will be described in detail below. When the semiconductor wafer is separated into LEDs, it is difficult to divide the wafer if the thickness of the substrate located on the light emitting surface side of the LEDs is increased. However, when the thickness of the substrate is reduced, light reflected from the upper surface of the light emitting element among the light from the active layer is likely to hit the electrode, so that the light may be absorbed and attenuated by the electrode. On the other hand, by joining the first member 1 to the substrate located on the light emitting surface side of the LED 6, the light is repeatedly reflected (the light emitting structure 4, the substrate that is the second member 2, and the first member 1. The thickness of the combined portion) can be increased. Thereby, it is considered that the number of times the light from the active layer 4b is irradiated to the n-electrode 5a and the p-electrode 5b can be reduced, and the light absorption at the electrode 5 can be reduced.

  In this embodiment, the substrate located on the light extraction surface side of the LED 6 is the second member 2 and the light emitting structure 4 is an optical semiconductor, but does not have a substrate on the light extraction surface side of the LED (that is, When a part of the light emitting structure 4 is used as the second member), a part of the light emitting structure 4 located on the light extraction surface side may be used as the second member. For example, in FIG. 1A, when the substrate 2 is not located on the light emitting surface side of the light emitting element 6, a part of the n-side semiconductor layer 4a functions as the second member 2 and the other one of the n-side semiconductor layer 4a. The part functions as a part of the light emitting structure 4. As the translucent second member 2, in addition to the substrate included in the light emitting element 6, the same materials as those described for the first member 1 can be used.

  In the present embodiment, a translucent second member is used as the second member 2, but a non-translucent second member may be used as the second member. As the non-light-transmitting second member, for example, a semiconductor wafer having a small energy band gap such as a metal plate, resin, or Si can be used.

  As the first metal film 3a and the second metal film 3b, a material that increases the transmittance for light of a predetermined wavelength by being combined with oxygen or the like contained in the first member 1 can be used. When oxygen is contained in the first member 1, for example, a metal having a large standard free energy for generation such as Al, Ti, Ta, or the like can be used. Moreover, when the 1st member 1 contains a fluorine, Mg, Li, and Ca can be used, for example. Further, when the first member 1 contains nitrogen, for example, Si, Al, Zn can be used. The first metal film 3a and the second metal film 3b are preferably made of the same material. Thereby, since it can suppress that a refractive index difference is made between the 1st metal film 3a and the 2nd metal film 3b, the fall of light extraction efficiency can be reduced.

  The film thickness of the bonding member 3 varies depending on the material, but is preferably 0.2 nm or more and 5 nm or less, and more preferably 0.4 nm or more and 2 nm or less. By forming the film with a thickness of 0.2 nm or more, the bonding strength between the bonding member 3, the first member 1, and the second member 2 can be increased. Moreover, by setting the film thickness to 5 nm or less, the transmittance of the bonding member 3 can be easily increased in the step of irradiating the bonding member 3 with laser light or irradiating the bonding member 3 with microwaves.

  When sapphire or glass is used as the first member 1 and the second member 2 and Al or Ti is used as the first metal film 3a and the second metal film 3b, the first metal film 3a and the second metal film 3b are formed. Before, it is preferable that the surface on which the first metal film 3a is formed and the surface on which the second metal film 3b is formed are hydrophilic surfaces. For example, the surface of the first member 1 on which the first metal film 3a is formed and the surface of the second member 2 on which the second metal film 3b is formed may be washed with water so that the surfaces become hydrophilic surfaces. it can. Thereby, since the quantity of the oxygen which can be taken in into the joining member 3 can be increased, the transmittance | permeability of the joining member 3 in the process of preparing a conjugate | zygote can be made high. Therefore, it is possible to further increase the transmittance of the bonding member 3 after irradiation with laser light described later or after irradiation with microwaves.

The analysis of the joined body according to another example shown in FIGS. 15A and 15B can increase the amount of oxygen taken into the joining member 3 by making the surface hydrophilic before irradiating the laser beam or the microwave. It can be confirmed from the result. FIG. 15A shows a dark field image obtained by observing the vicinity of the joining member 3 with a scanning transmission electron microscope (STEM). Here, quartz glass is used as the first member 1 and the second member 2, and each surface is washed with an acid and water to make a hydrophilic surface. A two-metal film 3b was formed, and a joined body in which the first metal film 3a and the second metal film 3b were joined was prepared. FIG. 15B shows the result of mapping measurement of silicon, titanium, and oxygen within the frame line of FIG. 15A by electron energy loss spectroscopy (EELS). The white area in the left figure of FIG. 15B is an area where silicon is strongly detected, and the black area is an area where the bonding member 3 is located. In the central view of FIG. 15B, titanium is detected in the white region corresponding to the black region in the left diagram, and in the right diagram in FIG. 15B, oxygen is detected in the region corresponding to the black region in the left diagram. It can be seen that the member 3 contains titanium and oxygen. This is also apparent from the energy loss spectrum (hereinafter referred to as “EELS spectrum”) of the bonding member 3 (within the broken line frame in the central view of FIG. 15B) shown in FIG. 16A. FIG. 16B is an EELS spectrum of TiO, and FIG. 16C is an EELS spectrum of rutile TiO ₂ . 16A to 16C, the spectrum near 460 eV shows the L shell of Ti, and the spectrum near 530 eV shows the K shell of O. The spectral shapes of the Ti L shell and the O K shell in the EELS spectrum shown in FIG. 16A are similar to the spectral shapes of the Ti L shell and the O K shell in TiO, and Ti in the EELS spectrum shown in FIG. 16A. The peak wavelength of the L shell is close to the peak wavelength of rutile TiO ₂ . Also from this, it is thought that the joining member 3 contains titanium and oxygen.

  In addition, before forming the 1st metal film 3a and the 2nd metal film 3b, when making the surface of the 1st member 1 and the 2nd member 2 into a hydrophilic surface, a metal atom and an oxygen atom are in the joining member 3. May be included. Even in this case, when the main component is a metal, it is included in the “joining member 3 made of metal” in this specification.

  Further, when the surfaces of the first member 1 and the second member 2 are hydrophilic surfaces, for example, when the thicknesses of the first metal film 3a and the second metal film 3b are relatively thin, The joining member 3 may contain oxygen atoms at a certain rate. Even in this case, it is common to the case where the main component of the bonding member is metal in that the bonding member 3 in the bonded body contains metal atoms. In any case, according to the present embodiment, by irradiating laser light, the transmittance of the bonding member 3 with respect to light of a predetermined wavelength can be made higher than the transmittance in the original state.

(Step of irradiating the joining member 3 with laser light or irradiating the joining member 3 with microwaves)
Next, as shown in FIG. 1C and FIG. 2A, the joining member 3 is irradiated with laser light, so that the transmittance of the joining member 3 with respect to light of a predetermined wavelength is made higher than the original transmittance. Thereby, since it can reduce that the light from the light emitting element 6 is absorbed by the joining member 3, it can be set as the optical component 10 with the high transmittance | permeability with respect to the light of a predetermined wavelength. For example, in the joined body in which the first member 1 and the second member 2 are made of quartz glass and the joining member 3 is made of Al of 0.8 nm, the transmittance with respect to light of 400 nm was about 87%. In contrast, an optical component irradiated with laser light so that a plurality of rows are formed by shifting an irradiation region having a width of 130 μm by 20 μm on the joined body obtained under the same conditions has a transmittance of about 400 nm. It was confirmed that it was 98%. By irradiating laser light as in the present embodiment, only the bonding member 3 and the vicinity thereof can be heated. Therefore, the deterioration of the first member 1 and the second member 2 can be reduced. For example, when the first member 1 and the light emitting element 6 are bonded as in the present embodiment, when the entire light emitting element 6 is heated, the electrode 5 included in the light emitting element 6 is heated to function as an electrode. There is a risk that it will not be fulfilled, but this can be avoided. Note that when an optical component that does not include a material that deteriorates when irradiated with microwaves is used as the optical component, microwave irradiation may be performed instead of laser light irradiation.

As the laser beam, for example, a solid-state laser such as a YAG laser, a gas laser such as a KrF excimer laser or a CO ₂ laser, a semiconductor laser, or the like can be used. In this embodiment, since it is easy to condense a laser beam, a laser beam is irradiated from the 1st member 1 side. Not only this but when both the 1st member 1 and the 2nd member 2 consist of a translucent material, you may irradiate a laser beam from the 2nd member 2 side. For example, when a phosphor-containing plate is used as the first member 1 and a sapphire substrate is used as the second member 2, it is preferable to irradiate laser light from the second member 2 side. Thereby, since the laser beam is irradiated to the bonding member 3 without being scattered, it is possible to concentrate and irradiate the bonding member 3 with high-density energy.

  In the case where the transmittance for light of a predetermined wavelength is increased by irradiating laser light, it is preferable that the transmittance of only a partial region in the bonding member 3 is higher than the transmittance in the original state. That is, it is preferable to leave a metal region partially in the joining member 3. Even if the adhesion force between the first member 1 and the bonding member 3 is reduced due to bonding of oxygen or the like contained in the first member 1 with the bonding member 3, the region where the laser beam is not irradiated (metal This is because the adhesion can be maintained in the region. In this embodiment, as shown in FIG. 2B, the laser beam is irradiated in a vertical stripe shape when viewed from above, but the present invention is not limited to this. Note that the width of the irradiation region formed by one laser light irradiation can be controlled by changing the distance from the upper surface of the bonding member 3 to the focal point of the laser light.

  As the microwave, for example, a microwave annealing apparatus can be used. Also in the case of irradiating with microwaves, as in the case of irradiating with laser light, the bonding member 3 is heated, and oxygen or the like contained in the first member 1 is combined with the bonding member 3 to increase the transmittance. It is guessed.

Second Embodiment
3A to 3C show a method for manufacturing the optical component 20 according to the second embodiment. FIG. 4A is a cross-sectional view of the optical component 20 obtained by the present embodiment, and FIG. 4B is a top view of the joining member 3 included in the optical component 20. In FIG. 4B, a hatched region X is a region where the transmittance for light of a predetermined wavelength is high. FIG. 5 is a diagram of a light emitting device 30 that combines the optical component 20 and the light emitting element 9 used as an optical semiconductor. The optical component 20 is substantially the same as the items described in the optical component 10 except the items described below.

  In this embodiment, in the step of preparing the joined body, a joined body having the second member 2, the joining member 3, the first member 1, the second joining member 8, and the third member 7 is prepared in order from the bottom. Yes. Specifically, first, as shown in FIG. 3A, the first metal film 3a is formed on the lower surface of the first member 1, the third metal film 8a is formed on the upper surface of the first member 1, and the second metal is formed on the upper surface of the second member 2. A fourth metal film 8b is formed on the lower surface of the film 3b and the third member 7, respectively. Then, the lower surface of the first metal film 3a, the upper surface of the second metal film 3b, the upper surface of the third metal film 8a, and the lower surface of the fourth metal film 8b are directly bonded to each other, whereby a joined body as shown in FIG. 3B. Are preparing. In the present embodiment, a phosphor-containing plate is used as the first member 1, a sapphire substrate is used as the second member 2, and a sapphire substrate is used as the third member 7. Then, in the step of irradiating the joining member 3 with laser light or irradiating the joining member 3 with microwaves, microwaves are emitted. At this time, as shown in FIG. 3C, not only the bonding member 3 but also the second bonding member 8 is irradiated with microwaves. Therefore, as shown in the region Y of FIG. The light rate is high.

  Also in the manufacturing method of the optical component 20, the optical component 20 with reduced light absorption by the bonding member 3 can be easily manufactured. Further, by irradiating the bonding member 3 with microwaves, the transmittance of the bonding member 3 can be increased in a wide range in a relatively short time. Furthermore, since the 3rd member 7 is joined to the upper surface side of the 1st member 1, it can make it easy to radiate the heat which arises with the fluorescent substance contained in a fluorescent substance containing board.

  In the present embodiment, the phosphor-containing plate that is the first member 1 includes a fluorescent part 1a and a light reflecting part 1b provided on a side surface of the fluorescent part 1a so as to surround the fluorescent part 1a.

  In this embodiment, the transmittance of the entire region of the joining member 3 and the second joining member 8 is increased. However, as in the first embodiment, when the laser beam is irradiated to increase the transmittance for light of a predetermined wavelength, the bonding member 3 and the second bonding member 8 are above and below the light reflecting portion 1b. It is preferable that the light transmittance of the located region remains the original transmittance. That is, it is preferable to irradiate only the region located above and below the fluorescent portion 1a with the laser beam. Thereby, in the joining member 3 and the second joining member 8, the region that does not affect the light extraction can be left as a metal, so that the heat from the phosphor toward the light reflecting portion 1 b is transferred to the second member. Heat can be easily exhausted to the second and third members 7.

  In the light emitting device 30, as shown in FIG. 5, a laser diode (Laser Diode, LD) is used as the light emitting element 9. This is because when the LD is used as the light emitting element 9, the necessity for improving the heat dissipation of the phosphor is large, and the necessity for joining the second member 2 is increased. Not only this but LED can also be used as the light emitting element 9. FIG.

<Third Embodiment>
FIG. 6A is a cross-sectional view of the optical component 40 obtained by the method for manufacturing the optical component 40 according to the third embodiment. FIG. 6B is a top view of the bonding member 3 included in the optical component 40. In FIG. 6B, the hatched region X is a region where the transmittance for light of a predetermined wavelength is high. Further, FIG. 7 is a schematic view of a light emitting device 50 in which an optical component 40 and a light emitting element 9 used as an optical semiconductor are combined. The optical component 40 is substantially the same as the items described in the optical component 10 except the items described below.

  In the present embodiment, a non-translucent member is used as the second member 2. Specifically, a phosphor-containing plate is used as the first member 1 and a metal plate is used as the second member 2. Further, in the step of irradiating the joining member 3 with laser light or irradiating the joining member 3 with microwaves, the region near the center is irradiated with laser light as viewed from above, and the surrounding region has the original transmittance. Leave it.

  Also in this embodiment, it is possible to easily manufacture the optical component 40 in which light from the light emitting element or the like is reduced from being absorbed by the bonding member 3. Further, when the second member 2 is made of a metal plate, the light from the light emitting element 9 is easily absorbed by the upper surface of the second member 2, but the first member 1 and the second member 2 as in this embodiment. The light absorbed by the second member 2 can be reduced by interposing the bonding member 3 having a high transmittance between the two. This is because light incident at a shallow angle out of light incident from the first member 1 side can be extracted by being totally reflected by the bonding member 3 having a high transmittance.

  In FIG. 6A, as the phosphor-containing plate, a plate containing a phosphor as a whole is used, but a plate containing a fluorescent portion and a light reflecting portion may be used.

  For example, as shown in FIG. 7, the optical component 40 can be combined with an LD that is a light emitting element 9 to form a light emitting device 50. In FIG. 7, light from the light emitting element 9 is irradiated on the upper surface of the first member 1, and light such as fluorescence is extracted from the same surface (upper surface) side.

<Example>
The optical component 60 was produced by the following manufacturing method. First, both surfaces of two sapphire substrates were polished to prepare a first member 1 made of a sapphire substrate having a thickness of 100 μm and a second member 2 made of a sapphire substrate having a thickness of 550 μm. And the joined body by which the 1st member 1 and the 2nd member 2 were bonded together through the joining member 3 was prepared using the atomic diffusion joining method. Specifically, first, as shown in FIG. 8A, a first metal film 3a made of Al is formed on the lower surface of the first member 1 with a film thickness of 0.5 nm, and a second metal film 3b made of Al is set to 0. It was formed on the upper surface of the second member 2 with a film thickness of 5 nm. Then, as shown in FIG. 8B, the lower surface of the first metal film 3a and the upper surface of the second metal film 3b were directly joined. At this time, the formation of the first metal film 3a, the formation of the second metal film 3b, and the bonding of the first metal film 3a and the second metal film 3b were performed in an ultrahigh vacuum.

  Next, as shown in FIG. 8C, laser light was irradiated from the upper surface side of the first member 1 so that the transmittance of the bonding member 3 was higher than the original transmittance. As the laser beam, a pulse YAG laser beam having a wavelength of 355 nm was used. At this time, the repetition frequency of the pulse laser beam was 60 kHz, and the pulse width was about 25 nanoseconds. Further, the output of the laser beam was constant at 400 mW, and the feeding speed of the joined body was 1 mm / sec. Furthermore, the focal position of the laser beam was set to a position of about 100 μm from the upper surface of the joined body. Then, the laser beam was scanned in the vertical direction as viewed from above. This scanning was performed a plurality of times while shifting by 20 μm in the direction perpendicular to the scanning direction.

  A cross-sectional view of the optical component 60 obtained in this manner is shown in FIG. 9A, and a top view of the joining member 3 included in the optical component 60 is shown in FIG. 9B. Moreover, the photograph observed from the upper surface side while irradiating white light from the lower surface side of the optical component 60 is shown in FIG. In FIG. 10, a bright color area is an area irradiated with laser light, and a dark color area is an area not irradiated with laser light (original transmittance of the bonding member 3). From this result, it was confirmed that the transmittance of the bonding member 3 in the portion irradiated with the laser light was higher than the transmittance of the bonding member 3 in the portion not irradiated with the laser light.

  11 and 12 show the results of mapping measurement of oxygen and aluminum in the vicinity of the joining member 3 by energy dispersive X-ray analysis. FIG. 11 shows a state before laser light irradiation, and FIG. 12 shows a state after laser light irradiation. Moreover, in FIG.11 and FIG.12, the joining member 3 is located in the center vicinity. In FIG. 11, compared with the first member 1 and the second member 2, the amount of aluminum in the joining member 3 is large and the amount of oxygen is small. This is because the first member 1 and the second member 2 are made of sapphire, whereas the bonding member 3 is made of metallic aluminum. On the other hand, in FIG. 12, it can be seen that the distribution of aluminum and oxygen is uniform throughout the first member 1, the joining member 3, and the second member 2. That is, from FIG. 12, it can be reasonably understood that the translucency is increased because the metal aluminum is changed to aluminum oxide by the laser light irradiation.

  Further, in each of FIGS. 13 and 14, a TEM image (left figure) in the vicinity of the joining member 3, an electron diffraction image (center figure) in the left part A, and an electron diffraction image (right figure) in the left part B are shown. Indicates. FIG. 13 shows a state before irradiation with laser light, and FIG. 14 shows a state after irradiation with laser light. From FIG. 13 and FIG. 14, it was confirmed that the bonding member 3 and the vicinity thereof are in a single crystal state regardless of before and after the laser beam irradiation. From this result, it was found that the bonding member 3 maintained the crystallinity without being changed to the amorphous state even when the laser beam was irradiated.

  The optical component described in each embodiment can be used for illumination, in-vehicle use, and the like.

DESCRIPTION OF SYMBOLS 1 ... 1st member 1a ... Fluorescence part 1b ... Light reflection part 2 ... 2nd member 3 ... Joining member 3a ... 1st metal film 3b ... 2nd metal film 4 ... Light-emitting structure 4a ... N side semiconductor layer 4b ... Active layer 4c ... p-side semiconductor layer 5 ... electrode 5a ... n electrode 5b ... p electrode 6 ... light emitting element 7 ... third member 8 ... second bonding member 8a ... third metal film 8b ... fourth metal film 9 ... light emitting element 10, 20 , 40, 60... Optical parts 30, 50... Light emitting device X, Y.

Claims (8)

A first metal film formed on a translucent first member having at least one of oxygen, fluorine, and nitrogen; and a second metal formed on a translucent or non-translucent second member. A step of preparing a joined body in which the first member and the second member are joined via a joining member made of metal by directly laminating a film;
Irradiating the bonding member with laser light or irradiating the bonding member with microwaves to increase the transmittance of the bonding member with respect to light of a predetermined wavelength from the original transmittance. A method for producing an optical component for an optical semiconductor.   The method of manufacturing an optical component according to claim 1, wherein in the step of irradiating the bonding member with laser light or irradiating the bonding member with microwaves, the bonding member is irradiated with laser light.   3. The method of manufacturing an optical component according to claim 1, wherein a translucent second member is used as the second member in the step of preparing the joined body.   The step of preparing the joined body uses a second member having at least one of oxygen, fluorine, and nitrogen as the second member. Of manufacturing optical parts.   5. The method of manufacturing an optical component according to claim 1, wherein in the step of preparing the joined body, a first member including a phosphor is used as the first member.   In the step of irradiating the joining member with laser light or irradiating the joining member with microwaves, the transmittance of only a partial region of the joining member is made higher than the transmittance in the original state. The method for manufacturing an optical component according to any one of claims 3 to 5, wherein Item 2 or Claim 2 is cited. A step of preparing a semiconductor light emitting element including the light transmissive second member and a light emitting structure provided as the optical semiconductor on one main surface of the light transmissive second member;
In the step of preparing the joined body,
Forming the first metal film on the first member, forming the second metal film on the other main surface of the second member;
The first metal film and the second metal film are directly bonded to each other, and any one of claims 3 to 5 or any one of claims 6 to 6 is cited. The manufacturing method of the optical component of description.   In the process of preparing the said conjugate | zygote, a conjugate | zygote is prepared using an atomic diffusion bonding method, The manufacturing method of the optical component of any one of Claims 1-7 characterized by the above-mentioned.

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