JP2018182100A - Substrate machining device, and substrate machining method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate machining device capable of detecting contact between a machining part and a substrate before machining of the substrate is advanced.SOLUTION: The substrate machining device is provided, including: a holding part that holds a substrate; a machining part that comes in contact with the substrate held by the holding part and machines the substrate; a driving part that rotates the machining part, and causes the machining part to come close to the substrate held by the holding part; a ring type periodic pattern part that rotates together with the machining part; a detection part that reads the periodic pattern of the periodic pattern part and outputs a pulse signal in accordance with the number of rotations of the periodic pattern part; a driving control part that controls the driving part; and a contact detection part that detects the contact of the substrate with the machining part on the basis of a period of the pulse signal output from the detection part when the driving control part causes the machining part to rotate and to come close to the substrate held by the holding part.SELECTED DRAWING: Figure 7

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

In recent years, for example, in the process of manufacturing a semiconductor device, a technology has been proposed for thinning a substrate by grinding the surface of a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer with a rotating grindstone (for example, see Patent Document 1) .

JP, 2015-019053, A

  The substrate processing apparatus includes a holding unit for holding the substrate, a processing unit for processing the substrate by contacting the substrate held by the holding unit, a substrate for rotating the processing unit and holding the processing unit by the holding unit. And a drive unit for making it approach.

  Conventionally, when the processing unit is rotated and the processing unit is brought close to the substrate held by the holding unit, the force, torque, or pressure acting on the processing unit is detected in order to detect contact between the processing unit and the substrate. Sensors and sensors that detect the vibration of the processing unit have been used.

  When these sensors are used, there is a problem that the processing of the substrate proceeds because the processing portion is strongly pressed against the substrate before the contact between the processing portion and the substrate is detected.

  The present invention has been made in view of the above problems, and has as its main object to provide a substrate processing apparatus capable of detecting contact of a processing unit with a substrate before processing of the substrate proceeds.

According to one aspect of the present invention, in order to solve the above problems,
A holding unit that holds the substrate;
A processing unit configured to process the substrate by contacting the substrate held by the holding unit;
A driving unit that rotates the processing unit and causes the processing unit to approach the substrate held by the holding unit;
A ring-shaped periodic pattern unit that rotates with the processing unit;
A detection unit that reads a periodic pattern of the periodic pattern unit and outputs a pulse signal according to the number of rotations of the periodic pattern unit;
A drive control unit that controls the drive unit;
When the drive control unit rotates the processing unit and causes the processing unit to approach the substrate held by the holding unit, the pulse output from the detection unit is a contact between the processing unit and the substrate. There is provided a substrate processing apparatus having a contact detection unit that detects based on a period of a signal.

  According to an aspect of the present invention, there is provided a substrate processing apparatus capable of detecting contact of a processing unit with a substrate before processing of the substrate proceeds.

FIG. 1 is a plan view of a substrate processing system according to one embodiment. FIG. 2A is a side view of a substrate processed by a substrate processing system according to one embodiment. 5 is a flowchart illustrating a substrate processing method according to an embodiment. It is a side view showing a substrate processing device by one embodiment. It is a side view which shows the principal part of the substrate processing apparatus by one Embodiment, Comprising: It is a side view which shows the state at the time of descent | fall start of a process part. It is a side view which shows the principal part of the substrate processing apparatus by one Embodiment, Comprising: It is a side view which shows the state at the time of reaching the speed switching position of a process part. It is a side view showing an important section of a substrate processing device by one embodiment, and is a side view showing a state at the time of contact with a substrate of a processing part. FIG. 7 is a diagram showing a pulse signal of a detection unit according to one embodiment. FIG. 2 is a functional block diagram showing components of a control device according to one embodiment. 5 is a flowchart illustrating a substrate processing method according to an embodiment. It is a flowchart which shows a substrate processing method following FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and the description thereof will be omitted.

<Substrate processing system>
FIG. 1 is a plan view of a substrate processing system according to one embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis orthogonal to one another are defined, and the positive direction of the Z axis is the vertically upward direction.

  The substrate processing system 1 processes the substrate W, and, for example, reduces the thickness of the substrate W. As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged in the order of the loading / unloading station 2 and the processing station 3 in the X-axis positive direction.

  The loading / unloading station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. A carrier C that accommodates a plurality of substrates W in a horizontal state is mounted on each mounting plate 11.

  The carrier C on one mounting plate 11 may accommodate the substrate W before processing, and the carrier C on the other one mounting plate 11 may accommodate the substrate W after processing. The number of mounting plates 11 is not limited to that illustrated. In addition to the carrier C, a carrier or the like for collecting a substrate having a defect may be placed on the placement plate 11.

  The transport region 20 is disposed adjacent to the X-axis positive direction side of the mounting table 10. In the transport region 20, a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21 are provided. The transport device 22 is also movable in the X-axis direction and pivotable about the Z-axis, between the carrier C mounted on the mounting plate 11 and a third processing block G3 of the processing station 3 described later. , Transport the substrate W.

  The processing station 3 has a first processing block G1, a second processing block G2, and a third processing block G3. For example, the first processing block G1 is provided on the back side (the Y-axis positive direction side in FIG. 1) of the processing station 3, and the second processing block G1 is provided on the front side (the Y-axis negative direction side in FIG. A processing block G2 is provided. A third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (X-axis negative direction side in FIG. 1).

  The first processing block G1 has a rough grinding device 31 and a finish grinding device 32.

  The rough grinding device 31 performs rough grinding of the substrate W. The rough grinding apparatus 31 has, for example, a holding unit for holding the substrate W, and a processing unit for processing the substrate W in contact with the substrate W held by the holding unit. A rotary grindstone is used as the processing unit. The configuration of the rough grinding apparatus 31 will be described later.

  The finish grinding device 32 performs finish grinding of the substrate W. The configuration of the finish grinding device 32 is substantially the same as the configuration of the rough grinding device 31. However, the average particle diameter of the abrasive grains of the grindstone of the finish grinding device 32 is smaller than the average particle diameter of the abrasive grains of the grindstone of the rough grinding device 31.

  The arrangement positions of the rough grinding device 31 and the finish grinding device 32 shown in FIG. 1 are merely illustrative and not limitative. That is, for example, the rough grinding apparatus 31 may be disposed in the second processing block G2 or the third processing block G3. Furthermore, for example, a new station is provided between the position on the X-axis positive direction side of the processing station 3 and between the loading / unloading station 2 and the processing station 3, and the rough grinding apparatus 31 etc. is disposed at the new station. May be

  The rough grinding device 31 and the finish grinding device 32 are separate devices, but may be combined into one device. Further, the type of grinding performed on the substrate W is not limited to two types, and may be only one type or three or more types.

  Further, the first processing block G1 may have a polishing apparatus for polishing the substrate W, instead of or in addition to the grinding apparatus for polishing the substrate W. The configuration of the polishing apparatus is substantially the same as the configuration of the rough grinding apparatus 31. As a polishing process, CMP (Chemical Mechanical Polishing) etc. are mentioned, for example.

  The second processing block G2 includes a damaged layer removing device 33 and a cleaning device 34. The damaged layer removing device 33 removes the damaged layer formed on the processed surface W1 of the substrate W by grinding. For example, the damage layer removing device 33 has a holding unit for holding the substrate W inside, and while rotating the holding unit and the substrate W, the processing solution is supplied to the substrate W to perform the wet etching process, and the damage layer Remove

  The cleaning device 34 includes, for example, a holding unit for holding the substrate W, and supplies cleaning liquid such as DIW (Deionized Water) to the processed surface W1 or the back surface of the substrate W while rotating the holding unit and the substrate W. . Thereby, the to-be-processed surface W1 etc. of the substrate W are cleaned. The damaged layer removing device 33 and the cleaning device 34 are not limited to the configurations described above.

  The third processing block G3 has a transition device 35 for the substrate W. A transport area 40 is formed in the area surrounded by the first processing block G1 to the third processing block G3 configured as described above. In the transport region 40, the transport device 41 is disposed.

  The transport device 41 has, for example, a transport arm which is movable in the vertical direction, in the horizontal direction, and around the vertical axis. The transfer device 41 moves in the transfer area 40 and transfers the substrate W to a predetermined device in the first processing block G1, the second processing block G2 and the third processing block G3 adjacent to the transfer area 40.

  The arrangement and the number of the rough grinding device 31, the finish grinding device 32, the damaged layer removing device 33 and the cleaning device 34 are not limited to the arrangement and the number shown in FIG. 1 and can be arbitrarily selected.

  In FIG. 1, the rough grinding apparatus 31, the finish grinding apparatus 32, the damaged layer removing apparatus 33 and the cleaning apparatus 34 are separate apparatuses, but two or more of them may be combined into one apparatus. .

  The substrate processing system 1 includes a control device 100. The control device 100 is configured by, for example, a computer, and includes a CPU (Central Processing Unit) 101, a storage medium 102 such as a memory, an input interface 103, and an output interface 104 as shown in FIG. The control device 100 performs various controls by causing the CPU 101 to execute a program stored in the storage medium 102. Further, the control device 100 receives an external signal at the input interface 103 and transmits the signal to the external at the output interface 104.

  The program of the control device 100 is stored in the information storage medium and installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical desk (MO), a memory card and the like. The program may be downloaded from a server via the Internet and installed.

<Board>
FIG. 2 is a side view of a substrate processed by a substrate processing system according to one embodiment. The substrate W processed by the substrate processing system 1 is, for example, a polymerized substrate having a substrate 4 to be processed, a support substrate 5, and a bonding layer 6 for bonding the substrate 4 to be processed 4 and the support substrate 5.

  The processing substrate 4 is a device on which elements, circuits, terminals and the like are formed. A surface on which an element, a circuit, a terminal, and the like are formed is a bonding surface. The surface on the opposite side to the bonding surface of the processing target substrate 4 is the processing surface W1 to be processed by the substrate processing system 1.

  The support substrate 5 is bonded to the target substrate 4 to temporarily reinforce the target substrate 4. The support substrate 5 is peeled off from the processing substrate 4 after the processing of the processing substrate 4. The peeled supporting substrate 5 may be bonded to another target substrate 4 after being cleaned.

  The bonding layer 6 bonds the processing substrate 4 and the support substrate 5. The bonding layer 6 may have a single layer structure or a multilayer structure. The bonding layer 6 has, for example, a protective agent layer 7, a release agent layer 8, and an adhesive layer 9 in this order from the substrate 4 to be treated to the supporting substrate 5.

  The protective agent layer 7 protects elements and the like formed on the bonding surface of the substrate 4 to be processed. The protective agent layer 7 is formed, for example, by applying a coating liquid composed of a protective agent and an organic solvent that dissolves the protective agent on the bonding surface of the substrate 4 to be treated and then heat treating it.

  The release agent layer 8 is for smoothly peeling the substrate 4 to be processed and the support substrate 5. The release agent layer 8 is formed, for example, by applying a coating solution composed of a release agent and an organic solvent for dissolving the release agent to the protective agent layer 7 or the adhesive layer 9 and then heat treating it. Release agents have lower adhesion than protective agents and adhesives.

  The adhesive layer 9 is formed, for example, by applying a coating liquid composed of an adhesive and an organic solvent that dissolves the adhesive on the bonding surface of the support substrate 5 and then performing heat treatment. The adhesive may be either a thermosetting resin or a thermoplastic resin.

  The structure of the bonding layer 6 is not particularly limited. For example, the bonding layer 6 may have a single-layer structure of only the adhesive layer 9 or a two-layer structure of the release agent layer 8 and the adhesive layer 9. In the case of the two-layer structure, the arrangement of the release agent layer 8 and the adhesive layer 9 may be reverse to that of FIG. 2, the release agent layer 8 is disposed on the support substrate 5 side, and the adhesive layer 9 is the substrate to be treated 4. It may be arranged on the side.

  Although the substrate W shown in FIG. 2 is a superposed substrate T, it may be configured of only the target substrate 4. Further, the type of the substrate 4 to be processed may be various, and in addition to the substrate for semiconductor, for example, a substrate for FPD (flat panel display) or a substrate for a mask reticle for photomask may be used.

<Substrate processing method>
Next, a substrate processing method using the substrate processing system 1 configured as described above will be described with reference to FIG. FIG. 3 is a flowchart illustrating a substrate processing method according to an embodiment. The substrate processing shown in FIG. 3 is performed under the control of the control device 100. Prior to step S101 of FIG. 3, the substrate W is taken out of the carrier C by the transfer device 22 and transferred to the transition device 35, and subsequently transferred from the transition device 35 to the rough grinding device 31 by the transfer device 41.

  In step S101 of FIG. 3, the rough grinding apparatus 31 performs rough grinding of the substrate W. The rough grinding apparatus 31 grinds the to-be-processed surface W1 of the substrate W with a rotating grindstone while supplying the grinding liquid to the to-be-processed surface W1 of the substrate W. The substrate W roughly ground is conveyed from the rough grinding device 31 to the finishing grinding device 32 by the conveyance device 41.

  Subsequently, in step S102, the finish grinding device 32 performs finish grinding of the substrate W. The finish grinding apparatus 32 grinds the surface to be processed W1 of the substrate W with a rotary grindstone while supplying the grinding fluid to the surface to be processed W1 of the substrate W. The average particle diameter of the abrasive grains of the rotary grindstone used in the finish grinding is smaller than the average particle diameter of the abrasive grains of the rotary grindstone used in the rough grinding. The substrate W subjected to finish grinding is transferred by the transfer device 41 from the finish grinding device 32 to the damaged layer removing device 33.

  Subsequently, in step S103, the damaged layer removing device 33 removes the damaged layer formed on the processing surface W1 of the substrate W. For example, wet etching is used to remove the damaged layer. The substrate W from which the damaged layer has been removed is transferred by the transfer device 41 from the damaged layer removal device 33 to the cleaning device 34.

  Subsequently, in step S104, the cleaning device 34 cleans the substrate W. The cleaning device 34 supplies the cleaning liquid to the rotating substrate W to clean the processing surface W1 and the like of the substrate W. The cleaned substrate W is transferred from the cleaning device 34 to the transition device 35 by the transfer device 41 and carried from the transition device 35 to the carrier C by the transfer device 22. Thus, a series of substrate processing ends.

<Board processing device>
FIG. 4 is a side view showing a substrate processing apparatus according to one embodiment. FIG. 5 is a side view showing the main part of the substrate processing apparatus according to one embodiment, and is a side view showing a state at the start of descent of the processing part. FIG. 6 is a side view showing the main part of the substrate processing apparatus according to one embodiment, and is a side view showing the state when the processing part has reached the speed switching position. FIG. 7 is a side view showing the main part of the substrate processing apparatus according to one embodiment, and is a side view showing a state when the processing unit is in contact with the substrate.

  The substrate processing apparatus 200 shown in FIG. 4 and the like is used as a rough grinding apparatus 31. As described above, since the finish grinding apparatus 32 is configured substantially the same as the rough grinding apparatus 31, the substrate processing apparatus 200 may be used as the finish grinding apparatus 32. The substrate processing apparatus 200 may also be used as a polishing apparatus.

  The substrate processing apparatus 200 has a holding unit 210 for holding the substrate W, and a processing unit 220 for processing the substrate W in contact with the substrate W held by the holding unit 210. The substrate processing apparatus 200 also includes a drive unit 230 that rotates the processing unit 220 and causes the processing unit 220 to approach the substrate W held by the holding unit 210. The substrate processing apparatus 200 further includes a grinding fluid supply unit 240 that supplies the grinding fluid to the substrate W held by the holding unit 210, and a collection cup 250 that collects the grinding fluid. Furthermore, the substrate processing apparatus 200 has a chamber 260 that forms a processing space for the substrate W inside. Hereinafter, each component of the substrate processing apparatus 200 will be described. However, for convenience of explanation, the chamber 260, the grinding liquid supply unit 240, the recovery cup 250, the holding unit 210, the processing unit 220, and the drive unit 230 will be described in order. .

  The chamber 260 forms a processing space for the substrate W inside. An FFU (Fan Filter Unit) 261 is provided on the ceiling of the chamber 260. An inert gas supply source 263 is connected to the FFU 261 via a valve 262. Then, the FFU 261 discharges an inert gas such as N 2 gas supplied from the inert gas supply source 263 into the chamber 260 to form a downflow in the chamber 260.

  The grinding fluid supply unit 240 supplies the grinding fluid to the substrate W held by the holding unit 210. The grinding fluid supply unit 240 is a nozzle 241 for discharging the grinding fluid from above to the substrate W held by the holding unit 210, a horizontal arm 242 for supporting the nozzle 241, and a pivot for pivoting and raising and lowering the horizontal arm 242. A lifting mechanism 243 is provided. The nozzle 241 is provided inside the chamber 260. The grinding fluid supply source 245 is connected to the nozzle 241 via a valve 244. For example, DIW is used as the grinding fluid.

  The recovery cup 250 is disposed so as to surround the substrate W held by the holder 210, and collects the grinding fluid scattered from the substrate W by the rotation of the substrate W. The recovery cup 250 is provided inside the chamber 260. A drainage port 251 is formed at the bottom of the recovery cup 250, and the grinding fluid collected by the recovery cup 250 is drained from the drainage port 251 to the outside of the substrate processing apparatus 200. In addition, an exhaust port 252 for discharging the gas supplied from the FFU 261 to the outside of the substrate processing apparatus 200 is formed at the bottom of the recovery cup 250. An exhaust facility is connected to the exhaust port 252, and the exhaust facility makes the inside of the chamber 260 of the substrate processing apparatus 200 negative pressure as compared with atmospheric pressure.

  The holding unit 210 holds the substrate W. For example, the holding unit 210 includes a chuck 211 which holds the substrate W horizontally, a support 212 which extends downward from the chuck 211, and a driving device 213 which rotates the support 212. The chuck 211 is provided inside the chamber 260. The chuck 211 is, for example, a vacuum chuck, adsorbs the back surface W2 opposite to the processing surface W1 of the substrate W, and holds the substrate W horizontally. The driving device 213 rotates the support 212 to rotate the substrate W held by the chuck 211 or the chuck 211. The drive device 213 is configured by an electric motor or the like.

  The processing unit 220 contacts the substrate W held by the holding unit 210 to process the substrate W. The processing unit 220 is configured of a rotary grindstone or the like. The processing unit 220 is provided inside the chamber 260. The processing unit 220 has, for example, a base 221 provided horizontally and a grinding stone 222 provided on the surface (for example, the lower surface) of the base 221 facing the substrate W, as shown in FIGS. A plurality of grinding wheels 222 are provided along the outer peripheral edge of the lower surface of the base 221, and contact the substrate W to grind the substrate W.

  The configuration of the processing unit 220 is not particularly limited. For example, instead of the grinding wheel 222, a non-woven fabric containing abrasive grains may be used. Further, instead of being provided in a ring shape along the outer periphery of the lower surface of the base 221, a grinding member such as a non-woven fabric containing abrasive grains or a grinding stone is provided in a disk shape on substantially the entire lower surface of the base 221 It is also good.

  The driving unit 230 (see FIGS. 5 to 7) rotates the processing unit 220 and brings the processing unit 220 into contact with or away from the substrate W held by the holding unit 210. The contact / separation direction is, for example, the vertical direction. The drive unit 230 brings the processing unit 220 closer to the substrate W by lowering the processing unit 220. Further, the driving unit 230 lifts the processing unit 220 to separate the processing unit 220 from the substrate W.

  The drive unit 230 includes, for example, a spindle 231 to which the processing unit 220 is attached, a spindle motor 232 that rotates the spindle 231, and an elevating device 233 that raises and lowers the spindle motor 232 with respect to the holding unit 210. The drive unit 230 also has a position sensor 237 that detects the arrival of the processing unit 220 at the speed switching position during approach of the processing unit 220 to the holding unit 210 (for example, during descent of the processing unit 220).

  The spindle 231 may be provided such that the axial direction is vertical. The processing unit 220 is attached to the lower end of the spindle 231. As the processing unit 220 wears, it is removed from the spindle 231 and replaced with a new one. On the other hand, a spindle motor 232 is connected to an upper end portion of the spindle 231.

  The spindle motor 232 rotates the processing unit 220 by rotating the spindle 231. The spindle motor 232 may be an induction motor to obtain high torque. The induction motor forms a rotating magnetic field by supplying an alternating current to the windings of the stator, and causes the rotor to rotate by the rotating magnetic field. The processing unit 220 is rotated at the number of rotations according to the frequency of the alternating current supplied to the winding of the stator.

  The lifting and lowering device 233 raises and lowers the processing unit 220 with respect to the holding unit 210 by raising and lowering the spindle motor 232 with respect to the holding unit 210. The lifting and lowering device 233 has, for example, a servomotor 234 and a motion conversion mechanism 235 for converting the rotational motion of the servomotor 234 into a linear motion of the spindle motor 232. The motion conversion mechanism 235 is configured by, for example, a ball screw. The lifting and lowering device 233 may further include a reduction gear that decelerates the rotation of the servomotor 234 and transmits it to the motion conversion mechanism 235.

  The position sensor 237 detects the arrival of the processing unit 220 at the speed switching position while the processing unit 220 approaches the holding unit 210 (for example, while the processing unit 220 is being lowered). The position sensor 237 is configured such that a sufficient gap is formed between the processing unit 220 and the substrate W held by the holding unit 210 when the processing unit 220 reaches the speed switching position (see FIG. 6). Provided.

  The position sensor 237 is configured of, for example, a proximity sensor that detects the presence of the detection object 238. The detection object 238 is attached to, for example, a housing of the spindle motor 232, and moves up and down with the processing unit 220 with respect to the holding unit 210. On the other hand, the position sensor 237 can not move up and down with respect to the holding unit 210, for example. The position sensor 237 outputs a signal when it detects the presence of the detection object 238. The arrangement of the detection object 238 and the position sensor 237 may be reversed, and the detection object 238 may be fixed, and the position sensor 237 may move up and down together with the processing unit 220.

  The substrate processing apparatus 200 detects a contact between the processing unit 220 and the substrate W when the processing unit 220 is rotated and the processing unit 220 approaches the substrate W held by the holding unit 210. The substrate processing apparatus 200 sets the position of the processing unit 220 when the contact with the substrate W is detected as the processing start position (origin).

  The substrate processing apparatus 200 according to the present embodiment reads the periodic pattern of the ring-shaped periodic pattern unit 270 and the periodic pattern unit 270, which rotate together with the processing unit 220, in order to detect contact between the processing unit 220 and the substrate W. And a detection unit 280 for outputting a pulse signal according to the number of rotations of the pattern unit 270.

  The periodic pattern unit 270 rotates with the processing unit 220, and contacts and separates from the holding unit 210 together with the processing unit 220. The periodic pattern unit 270 may be provided in a ring shape around the rotation center line of the processing unit 220. The rotation center line of the periodic pattern unit 270 and the rotation center line of the processing unit 220 coincide with each other.

  The periodic pattern unit 270 may be provided in the processing unit 220, but may be provided in the middle of the spindle 231 as shown in FIG. For example, the rotating disk 236 is horizontally provided in the middle of the spindle 231, and the periodic pattern portion 270 is provided along the outer periphery of the rotating disk 236. By setting a distance between the periodic pattern portion 270 and the processing portion 220, adhesion of the grinding fluid to the periodic pattern portion 270 can be suppressed. Thereby, damage to the periodic pattern portion 270 can be suppressed, and the reading accuracy of the periodic pattern by the detection unit 280 can be improved.

  The periodic pattern portion 270 has, for example, a periodic pattern formed by alternately arranging high reflectance portions 271 and low reflectance portions 272 having different light reflectances in the circumferential direction. The periodic pattern portion 270 is formed, for example, by sticking a zebra tape on the outer periphery of the rotating disk 236. A pulse signal can be output to the detection unit 280 with a simple configuration.

  The detection unit 280 contacts and separates with the processing unit 220 and the holding unit 210 without rotating with the processing unit 220. The detection unit 280 is formed of, for example, a photoelectric sensor, and includes a light transmitting unit that irradiates the periodic pattern unit 270 with light and a light receiving unit that receives the light reflected by the periodic pattern unit 270. The light receiving unit outputs a signal according to the amount of light received. The photoelectric sensor may be a fiber sensor, and a light guiding portion for guiding light emitted from the light transmitting portion toward the periodic pattern portion 270 and a light guiding portion for guiding light reflected by the periodic pattern portion 270 toward the light receiving portion And may be further included.

  The combination of the periodic pattern unit 270 and the detection unit 280 is not particularly limited. For example, the periodic pattern portion 270 may be formed in a gear shape, and may have a periodic pattern formed by alternately arranging the convex portions and the concave portions in the circumferential direction. In this case, the detection unit 280 is configured of, for example, a proximity sensor or an eddy current displacement sensor. The detection unit 280 may output a pulse signal according to the rotation number of the periodic pattern unit 270.

  FIG. 8 is a diagram showing a pulse signal of a detection unit according to an embodiment. In FIG. 8, the solid line represents the waveform of the pulse signal output from the detection unit 280 when the processing unit 220 is slowly lowered while rotating at a low rotational speed, and the dashed-dotted line is a reference to be compared with the waveform of the pulse signal indicated by the solid line. Represents a waveform. The reference waveform is created based on, for example, the period of the periodic pattern unit 270, the target number of rotations of the spindle motor 232, and the like. The waveform of the pulse signal and the reference waveform are, for example, rectangular waves as shown in FIG.

  When the processing part 220 is slowly lowered while rotating at a low rotational speed, no frictional resistance acts on the processing part 220 from the substrate W until the processing part 220 contacts the substrate W, so the rotational speed of the processing part 220 is stable doing. Therefore, the period of the waveform of the pulse signal is also stable, and the waveform of the pulse signal matches the reference waveform.

  Thereafter, when the processing unit 220 comes in contact with the substrate W, a frictional resistance acts on the processing unit 220 from the substrate W, so the number of rotations of the processing unit 220 decreases. The reduction of the rotational speed is particularly remarkable when using an induction motor as the spindle motor 232. When the number of rotations of the processing unit 220 decreases, the period of the waveform of the pulse signal output from the detection unit 280 becomes longer, so the waveform of the pulse signal and the reference waveform deviate.

  Therefore, whether or not the processing unit 220 and the substrate W are in contact can be detected depending on whether the magnitude of the deviation between the waveform of the pulse signal and the reference waveform is equal to or greater than the threshold. The threshold is set based on the repetition accuracy of the periodic pattern of the periodic pattern portion 270, the stability of the rotation number of the processing unit 220 when not in contact with the substrate W, and the like. In addition to the magnitude of the deviation, the direction of the deviation may be taken into account.

  In FIG. 8, the contact between the processing unit 220 and the substrate W is detected based on the deviation between the rising of the waveform of the pulse signal and the rising of the reference waveform. The contact between the processing unit 220 and the substrate W may be detected based on the difference between the falling of the waveform of the pulse signal and the falling of the reference waveform.

  FIG. 9 is a functional block diagram showing components of a control device according to one embodiment. Each functional block illustrated in FIG. 9 is conceptual and does not necessarily have to be physically configured as illustrated. All or part of each functional block can be functionally or physically distributed and integrated in any unit. Each processing function performed in each functional block may be realized by a program executed by the CPU, in whole or any part thereof, or may be realized as hardware by wired logic. The control device 100 is provided separately from the rough grinding device 31 and the like in FIG. 1, but may be provided as a part of the rough grinding device 31. That is, the control device 100 may be part of the substrate processing apparatus 200.

  As shown in FIG. 9, the control device 100 includes a drive control unit 111 that controls the drive unit 230. The drive control unit 111 controls the drive unit 230 to control the rotation of the processing unit 220 and the elevation of the processing unit 220 (contact and separation of the processing unit 220 with respect to the holding unit 210).

  The drive control unit 111 controls, for example, the frequency of the alternating current supplied to the spindle motor 232 so that the rotation speed of the processing unit 220 becomes the target rotation speed. The drive control unit 111 may control an inverter that changes the frequency of the alternating current supplied to the spindle motor 232.

  The drive control unit 111 performs feedback control of the servomotor 234 so that the position in the vertical direction of the processing unit 220 becomes the target position or the speed of the processing unit 220 becomes the target speed. The vertical position of the processing unit 220 is monitored using an encoder 239. The encoder 239 may be, for example, a rotary encoder that detects the rotation of the servomotor 234. The encoder 239 may be a linear encoder.

  As shown in FIG. 9, the control device 100 includes a contact detection unit 112 that detects the contact between the processing unit 220 and the substrate W based on the cycle of the pulse signal output from the detection unit 280. When the processing unit 220 contacts the substrate W, the rotational speed of the processing unit 220 decreases due to frictional resistance, and the cycle of the pulse signal output from the detection unit 280 becomes long.

  The contact detection unit 112 detects the contact between the processing unit 220 and the substrate W based on the cycle of the pulse signal output from the detection unit 280. The contact detection unit 112 may detect the contact between the processing unit 220 and the substrate W before the processing unit 220 completely stops due to frictional resistance. The contact between the processing unit 220 and the substrate W can be detected before the processing of the substrate W proceeds.

  While the contact detection unit 112 detects the presence or absence of contact between the processing unit 220 and the substrate W, the substrate W and the holding unit 210 that holds the substrate W may not rotate. This is because the change in the rotational speed of the processing unit 220 due to the frictional resistance can be easily understood.

  The position of the processing unit 220 when contacting the substrate W is detected by the encoder 239 and stored in the storage medium 102 as the processing start position of the processing unit 220.

  As shown in FIG. 9, the control device 100 starts the processing start position of the processing unit 220 when processing the m (m is a natural number of 1 or more) th substrate W, and n (n is 2 or more larger than m) A natural number of N) is a displacement calculation unit 113 that calculates a displacement from the processing start position of the processing unit 220 when processing the first substrate W. Here, the cumulative number of processed substrates W is reset to 1 each time the processing unit 220 attached to the spindle 231 is replaced.

  The displacement calculation unit 113 calculates the magnitude of the displacement and the direction of the displacement. By calculating the displacement by the displacement calculation unit 113, although it will be described in detail later, determination of the presence or absence of abnormality and calculation of the wear amount of the processing unit 220 become possible.

  As shown in FIG. 9, the control device 100 may have an abnormality determination unit 114 that determines the presence or absence of an abnormality based on the displacement calculated by the displacement calculation unit 113. An abnormality in the thickness of the substrate W before processing can be detected or an abnormal wear of the processing unit 220 can be detected from the size and the direction of displacement of the processing start position. When the processing start position of the processing unit 220 and the nth substrate W are processed when processing the n−1th substrate W so that the presence or absence of abnormality can be determined each time the processing of the substrate W is performed. The displacement with the processing start position of the processing unit 220 may be calculated.

  For example, the processing start position of the processing unit 220 when processing the nth substrate W is displaced upward as compared to the processing start position of the processing unit 220 when processing the n−1th substrate W. When the magnitude of the displacement exceeds a threshold, it is determined that there is an abnormality. Specifically, it is determined that the thickness of the nth substrate W is abnormally thick.

  Similarly, the processing start position of the processing unit 220 when processing the nth substrate W is displaced downward compared to the processing start position of the processing unit 220 when processing the n−1th substrate W. If the magnitude of the displacement exceeds a threshold, it is determined that there is an abnormality. Specifically, it is determined that the thickness of the nth substrate W is abnormally thin or abnormal wear has occurred in the processed portion 220 when the n-1th substrate W is processed.

  On the other hand, compared with the processing start position of the processing unit 220 when processing the n-1th substrate W, the magnitude of the displacement of the processing start position of the processing unit 220 when processing the nth substrate W is If it is below the threshold value, it is judged that there is no abnormality. The threshold value used to determine the presence or absence of an abnormality is set based on an error in the thickness of the substrate W before processing, a standard amount of wear of the processing unit 220 per substrate W, and the like.

  When the abnormality determination unit 114 determines that there is no abnormality, the drive control unit 111 continues processing of the n-th substrate W. On the other hand, when the abnormality determination unit 114 determines that there is an abnormality, the drive control unit 111 may interrupt the processing of the n-th substrate W. When the processing of the nth substrate W is interrupted, an alarm or the like may be output. The alarm is output in the form of an image or sound.

  When the abnormality determination unit 114 determines that there is no abnormality, the drive control unit 111 processes the processing unit 220 for the (n + 1) th substrate W based on the processing start position of the processing unit 220 when processing the nth substrate W. You may control the approach speed of The processing unit 220 can be brought close to the substrate W at a high speed up to near the (n + 1) th substrate W, and the throughput can be improved.

  As shown in FIG. 9, the control device 100 may have a wear amount estimation unit 115 that estimates the wear amount of the processing unit 220 based on the displacement calculated by the displacement calculation unit 113. For example, the wear amount estimation unit 115 displaces the processing start position of the processing unit 220 when processing the first substrate W and the processing start position of the processing unit 220 when processing the nth substrate W. The amount of wear is the amount of wear of the processing unit 220. If the wear amount is equal to or more than a predetermined value, an alarm or the like is output. Thereby, replacement of the processing unit 220 can be promoted.

<Board processing method>
FIG. 10 is a flowchart showing a substrate processing method according to an embodiment. The process after step S201 shown in FIG. 10 is a process for processing the first substrate W, and is started when the first substrate W is held by the holding unit 210. In the description of FIG. 10, lowering the processing unit 220 means bringing the processing unit 220 closer to the substrate W held by the holding unit 210.

  In step S201, the drive control unit 111 causes the processing unit 220 to descend at high speed. At this time, the drive control unit 111 may or may not rotate the processing unit 220. The substrate W may not rotate until the contact detection unit 112 detects the contact between the processing unit 220 and the substrate W.

  In the subsequent step S202, the drive control unit 111 determines, using the position sensor 237, whether or not the processing unit 220 has reached the speed switching position. A position sensor 237 is provided such that a sufficient gap is formed between the processing unit 220 and the substrate W held by the holding unit 210 when the processing unit 220 reaches the speed switching position.

  If the processing unit 220 has not reached the speed switching position (No at Step S202), the process returns to Step S201, and the processing after Step S201 is continued.

  On the other hand, if the processing unit 220 has reached the speed switching position (Yes at step S202), the process proceeds to step S203.

  In step S203, the drive control unit 111 lowers the processing unit 220 at a low speed, and rotates the processing unit 220 at a low speed. The lowering speed and the number of rotations of the processing unit 220 are set so that the processing unit 220 and the substrate W are not damaged by an impact when the processing unit 220 and the substrate W are in contact with each other. The descent speed of the processing unit 220 is set to be smaller than that in step S201. The rotation speed of the processing unit 220 is not particularly limited, but is set to, for example, about 0.5 rpm.

  In the subsequent step S204, it is checked whether the contact detection unit 112 has detected a contact between the processing unit 220 and the substrate W. When the processing unit 220 contacts the substrate W, the rotational speed of the processing unit 220 decreases due to frictional resistance, and the cycle of the pulse signal output from the detection unit 280 becomes long. The contact detection unit 112 detects the contact between the processing unit 220 and the substrate W based on the cycle of the pulse signal output from the detection unit 280.

  If the contact between the processing unit 220 and the substrate W is not detected yet (No at Step S204), the process returns to Step S203, and the processing after Step S203 is continued.

  On the other hand, when the contact between the processing unit 220 and the substrate W is detected (step S204, Yes), the process proceeds to step S205.

  In step S205, the drive control unit 111 sets the position of the processing unit 220 when contacting the substrate W to the processing start position of the first sheet. The first processing start position of the processing unit 220 is detected by the encoder 239 and stored in the storage medium 102.

  In the subsequent step S206, the drive control unit 111 raises the processing unit 220 to a position separated upward by a predetermined distance from the processing start position.

  In the subsequent step S207, the drive control unit 111 rotates the processing unit 220 at a high speed, and lowers the processing unit 220. Thereby, the processing unit 220 contacts the substrate W to process the substrate W. At this time, the substrate W also rotates with the chuck 211.

  In the subsequent step S208, the drive control unit 111 determines whether or not the processing unit 220 has reached the processing end position. The processing end position of the processing unit 220 may be set such that the thickness of the substrate W after processing falls within a preset allowable range.

  If the processing unit 220 has not reached the processing end position (No at Step S208), the process returns to Step S207, and the processing after Step S207 is continued.

  On the other hand, when the processing unit 220 has reached the processing end position (Yes in step S208), the process proceeds to step S209.

  In step S209, the drive control unit 111 raises the processing unit 220 and stops the rotation of the processing unit 220. Thereafter, the present processing is finished. Thus, the processing of the first substrate W is performed.

  In addition, the order of each step S201 to S209 is not limited to the order of FIG.

  FIG. 11 is a flowchart of the substrate processing method, following FIG. 10. The process after step S301 shown in FIG. 11 is a process for processing the n-th substrate W, and is started when the n-th substrate W is held by the holding unit 210. n is, as described above, a natural number of 2 or more larger than m. In the description of FIG. 11, lowering the processing unit 220 means bringing the processing unit 220 closer to the substrate W held by the holding unit 210.

  In step S301, the drive control unit 111 causes the processing unit 220 to descend at high speed. At this time, the drive control unit 111 may or may not rotate the processing unit 220. The substrate W may not rotate until the contact detection unit 112 detects the contact between the processing unit 220 and the substrate W.

  In the subsequent step S302, the drive control unit 111 determines, using the encoder 239, whether or not the position of the processing unit 220 has reached the speed switching position. Here, unlike the step S202, a position above the processing start position when processing the substrate W for m (m is n−1, for example) times is used as the speed switching position. The speed switching position is set such that a slight gap is formed between the processing unit 220 and the substrate W held by the holding unit 210 when the processing unit 220 reaches the speed switching position. The speed switching position is set based on an error in the thickness of the substrate W before processing, a standard amount of wear of the processing unit 220 per substrate W, and the like. As compared with the case where the position sensor 237 is used as in step S202, the processing unit 220 can be brought close to the substrate W at high speed up to the nth substrate W, and the throughput can be improved.

  If the processing unit 220 has not yet reached the speed switching position (No at step S302), the process returns to step S301, and the processing after step S301 is continued.

  On the other hand, when the processing unit 220 has reached the speed switching position (Yes in step S302), the process proceeds to step S303.

  In step S303, the drive control unit 111 lowers the processing unit 220 at a low speed, and rotates the processing unit 220 at a low speed. The lowering speed and the number of rotations of the processing unit 220 are set so that the processing unit 220 and the substrate W are not damaged by an impact when the processing unit 220 and the substrate W are in contact with each other. The descent speed of the processing unit 220 is set to be smaller than that in step S301. The rotation speed of the processing unit 220 is not particularly limited, but is set to, for example, about 0.5 rpm.

  In the subsequent step S304, it is checked whether the contact detection unit 112 has detected a contact between the processing unit 220 and the substrate W. When the processing unit 220 contacts the substrate W, the rotational speed of the processing unit 220 decreases due to frictional resistance, and the cycle of the pulse signal output from the detection unit 280 becomes long. The contact detection unit 112 detects the contact between the processing unit 220 and the substrate W based on the cycle of the pulse signal output from the detection unit 280.

  If the contact between the processing unit 220 and the substrate W is not detected yet (No at Step S304), the process returns to Step S303, and the processing after Step S303 is continued.

  On the other hand, when the contact between the processing unit 220 and the substrate W is detected (step S304, Yes), the process proceeds to step S305.

  In step S305, the drive control unit 111 sets the position of the processing unit 220 when contacting the substrate W as the n-th processing start position. The n-th processing start position of the processing unit 220 is detected by the encoder 239 and stored in the storage medium 102.

  In step S305, the displacement calculation unit 113 starts the processing start position of the processing unit 220 when processing the n−1th substrate W and the processing of the processing unit 220 when processing the n th substrate W. Calculate the displacement with the start position. The reference processing start position for calculating the displacement is not limited to the n-1st processing start position, and may be, for example, the n-2th processing start position.

  In the subsequent step S306, the drive control unit 111 raises the processing unit 220 to a position separated upward by a predetermined distance from the processing start position.

  In the following step S307, the abnormality determination unit 114 determines the presence or absence of an abnormality based on the displacement calculated in step S305. If the displacement falls within a predetermined allowable range, it is determined that there is no abnormality, and if the displacement falls outside the predetermined allowable range, it is determined that there is an abnormality.

  In the subsequent step S308, the control device 100 checks whether or not the abnormality determination unit 114 determines that there is no abnormality.

  If it is determined by the abnormality determination unit 114 that there is an abnormality (No at step S308), there is a possibility that there is an abnormality in the thickness of the substrate W before processing or abnormal wear of the processing unit 220 has occurred. The apparatus 100 interrupts the processing of the n-th substrate W and ends the present processing.

  On the other hand, when it is determined by the abnormality determination unit 114 that there is no abnormality (Yes in step S308), the process proceeds to step S309.

  In step S309, the drive control unit 111 rotates the processing unit 220 at high speed, and lowers the processing unit 220. Thereby, the processing unit 220 contacts the substrate W to process the substrate W. At this time, the substrate W also rotates with the chuck 211.

  In the subsequent step S310, the drive control unit 111 determines whether or not the processing unit 220 has reached the processing end position. The processing end position of the processing unit 220 may be set such that the thickness of the substrate W after processing falls within a preset allowable range.

  If the processing unit 220 has not reached the processing end position (No at Step S310), the process returns to Step S309, and the processing after Step S309 is continued.

  On the other hand, when the processing unit 220 has reached the processing end position (Yes in step S310), the process proceeds to step S311.

  In step S311, the drive control unit 111 raises the processing unit 220 and stops the rotation of the processing unit 220. Thereafter, the present processing is finished. Thus, the processing of the nth substrate W is performed.

  Thereafter, processing of the (n + 1) th substrate W is performed in the same manner as processing of the nth substrate. In the processing of the (n + 1) th substrate W, the approaching speed of the processing unit 220 to the (n + 1) th substrate W based on the processing start position of the processing unit 220 when processing the nth substrate W in step S301. You may control The processing unit 220 can be brought close to the substrate W at a high speed up to near the (n + 1) th substrate W, and the throughput can be improved.

  Note that the order of steps S301 to S311 is not limited to the order shown in FIG. For example, although the setting of the processing start position and the calculation of the displacement of the processing start position are simultaneously performed in the step S305, the calculation of the displacement may be performed by the step S307.

<Summary>
As described above, according to the present embodiment, when the processing unit 220 is rotated and the processing unit 220 is brought closer to the substrate W held by the holding unit 210, the ring-shaped cycle rotates with the processing unit 220. The periodic pattern of the pattern unit 270 is read by the detection unit 280. Further, a pulse signal corresponding to the number of rotations of the processing unit 220 is output by the detection unit 280, and the contact between the processing unit 220 and the substrate W is detected based on the cycle of the pulse signal. When the processing unit 220 contacts the substrate W, the rotational speed of the processing unit 220 decreases due to frictional resistance, and the cycle of the pulse signal output from the detection unit 280 becomes long. Therefore, the contact between the processing unit 220 and the substrate W can be detected before the processing of the substrate W proceeds with a simple configuration.

  According to the present embodiment, the position of the processing unit 220 when coming into contact with the substrate W held by the holding unit 210 is set as the processing start position. In addition, the processing start position of the processing unit 220 when processing the m (m is a natural number of 1 or more) th substrate W, and the processing start position of the n (n is a natural number larger than m) substrate W The displacement with respect to the processing start position of the processing unit 220 is calculated. Specifically, the magnitude of the displacement of the processing start position and the direction of the displacement are calculated. By calculating the displacement of the processing start position, it is possible to determine the presence or absence of abnormality and to calculate the wear amount of the processing unit 220.

  According to this embodiment, the presence or absence of abnormality is determined based on the displacement of the processing start position. An abnormality in the thickness of the substrate W before processing can be detected or an abnormal wear of the processing unit 220 can be detected from the size and the direction of displacement of the processing start position. When the processing start position of the processing unit 220 and the nth substrate W are processed when processing the n−1th substrate W so that the presence or absence of abnormality can be determined each time the processing of the substrate W is performed. The displacement with the processing start position of the processing unit 220 may be calculated.

  According to the present embodiment, when it is determined that there is no abnormality, the approaching speed of the processing unit 220 to the (n + 1) th substrate W based on the processing start position of the processing unit 220 when processing the nth substrate W Control. The processing unit 220 can be brought close to the substrate W at a high speed up to near the (n + 1) th substrate W, and the throughput can be improved. When it is determined that there is an abnormality, the processing of the nth substrate W may be interrupted. When the processing of the nth substrate W is interrupted, an alarm or the like may be output. The alarm is output in the form of an image or sound.

  According to this embodiment, the wear amount of the processing unit 220 is estimated based on the displacement of the processing start position. For example, the size of the displacement between the processing start position of the processing unit 220 when processing the first substrate W and the processing start position of the processing unit 220 when processing the nth substrate W The amount of wear is 220. If the wear amount is equal to or more than a predetermined value, an alarm or the like is output. Thereby, replacement of the processing unit 220 can be promoted.

  According to the present embodiment, an induction motor is used as the spindle motor 232 for rotating the processing unit 220. When the processing unit 220 and the substrate W are in contact with each other, the rotation speed of the processing unit 220 is significantly reduced, so that the contact between the processing unit 220 and the substrate W can be detected before the processing of the substrate W proceeds.

<Deformation, improvement>
As mentioned above, although embodiment, such as a substrate processing device and a substrate processing method, was described, the present invention is not limited to the above-mentioned embodiment etc., within the range of the gist of the present invention indicated in the claim, various modification , Improvement is possible.

100 control device 111 drive control unit 112 contact detection unit 113 displacement calculation unit 114 abnormality determination unit 115 wear amount estimation unit 200 substrate processing apparatus 210 holding unit 220 processing unit 230 drive unit 231 spindle 232 spindle motor 270 periodic pattern unit 280 detection unit

Claims (12)

A holding unit that holds the substrate;
A processing unit configured to process the substrate by contacting the substrate held by the holding unit;
A driving unit that rotates the processing unit and causes the processing unit to approach the substrate held by the holding unit;
A ring-shaped periodic pattern unit that rotates with the processing unit;
A detection unit that reads a periodic pattern of the periodic pattern unit and outputs a pulse signal according to the number of rotations of the periodic pattern unit;
A drive control unit that controls the drive unit;
When the drive control unit rotates the processing unit and causes the processing unit to approach the substrate held by the holding unit, the pulse output from the detection unit is a contact between the processing unit and the substrate. A substrate processing apparatus, comprising: a contact detection unit that detects based on a cycle of a signal. The position of the processing unit when coming into contact with the substrate held by the holding unit is taken as a processing start position,
The processing start position of the processing portion when processing the m (m is a natural number of 1 or more) first substrate, and the processing start position of the n (n is a natural number larger than m) second substrate The substrate processing apparatus according to claim 1, further comprising a displacement calculation unit configured to calculate a displacement of the processing unit with the processing start position.   The substrate processing apparatus according to claim 2, further comprising an abnormality determination unit that determines the presence or absence of an abnormality based on the displacement calculated by the displacement calculation unit.   When the abnormality determination unit determines that there is no abnormality, the drive control unit performs the processing on the (n + 1) th substrate based on the processing start position of the processing unit when processing the nth substrate. The substrate processing apparatus of Claim 3 which controls the approach speed of a part.   The substrate processing apparatus according to any one of claims 2 to 4, further comprising a wear amount estimation unit configured to estimate a wear amount of the processing unit based on the displacement calculated by the displacement calculation unit.   The substrate processing apparatus according to any one of claims 1 to 5, wherein the drive unit has an induction motor that rotates the processing unit. A substrate processing method for bringing a substrate held by a holding unit into contact with a processing unit and processing the substrate by the processing unit,
When rotating the processing unit and making the processing unit approach the substrate held by the holding unit, the detection unit reads a periodic pattern of a ring-shaped periodic pattern unit that rotates with the processing unit, and detects the detection The substrate processing method which outputs a pulse signal according to the rotation speed of the said process part by the part, and detects the contact of the said process part and the said board | substrate based on the period of the said pulse signal. The position of the processing unit when contacting the substrate held by the holding unit is a processing start position,
The processing start position of the processing portion when processing the m (m is a natural number of 1 or more) first substrate, and the processing start position of the n (n is a natural number larger than m) second substrate The substrate processing method according to claim 7, wherein a displacement of the processing unit from the processing start position is calculated.   The substrate processing method according to claim 8, wherein the presence or absence of an abnormality is determined based on the displacement.   When it is determined that there is no abnormality, the approach speed of the processing unit to the (n + 1) th substrate is controlled based on the processing start position of the processing unit when processing the nth substrate. 10. A substrate processing method according to item 9.   The substrate processing method according to any one of claims 8 to 10, wherein the wear amount of the processing portion is estimated based on the displacement.   The substrate processing method according to any one of claims 7 to 11, wherein an induction motor is used as a spindle motor for rotating the processing unit.

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