JP2018142691A5 - - Google Patents
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- JP2018142691A5 JP2018142691A5 JP2017201978A JP2017201978A JP2018142691A5 JP 2018142691 A5 JP2018142691 A5 JP 2018142691A5 JP 2017201978 A JP2017201978 A JP 2017201978A JP 2017201978 A JP2017201978 A JP 2017201978A JP 2018142691 A5 JP2018142691 A5 JP 2018142691A5
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- JP
- Japan
- Prior art keywords
- gas
- conductive layer
- vapor pressure
- low vapor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims description 12
- 210000002381 Plasma Anatomy 0.000 claims description 7
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N iso-propanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
Description
上記課題を解決するために、一の態様によれば、被処理体の導電層の上の絶縁膜をマスクのパターンにエッチングし、形成した前記絶縁膜の凹部に前記導電層を露出させる第１の工程と、前記導電層が露出した絶縁膜の凹部に有機膜を形成する第２の工程と、を含み、前記第２の工程は、チャンバの内部を所定の圧力に保持し、ステージを−２０℃以下の温度に冷却し、該ステージの上に被処理体を設置する工程と、前記チャンバの内部に低蒸気圧材料のガスを含むガスを供給する工程と、供給した前記低蒸気圧材料のガスを含むガスからプラズマを生成し、該プラズマによって前記低蒸気圧材料から生成されるプリカーサを前記導電層に堆積させ、前記有機膜を形成する工程と、を有する半導体製造方法が提供される。 In order to solve the above problems, according to one aspect, an insulating film on a conductive layer of an object to be processed is etched into a mask pattern to expose the conductive layer in a recess of the formed insulating film. And a second step of forming an organic film in the concave portion of the insulating film where the conductive layer is exposed. The second step holds the inside of the chamber at a predetermined pressure and Cooling to a temperature of 20° C. or lower, placing an object to be processed on the stage, supplying a gas containing a low vapor pressure material gas into the chamber, and supplying the low vapor pressure material Plasma is generated from a gas containing the gas described above, and a precursor generated from the low vapor pressure material by the plasma is deposited on the conductive layer to form the organic film. ..
Claims (9)
前記導電層が露出した絶縁膜の凹部に有機膜を形成する第２の工程と、を含み、
前記第２の工程は、
チャンバの内部を所定の圧力に保持し、ステージを−２０℃以下の温度に冷却し、該ステージの上に被処理体を設置する工程と、
前記チャンバの内部に低蒸気圧材料のガスを含むガスを供給する工程と、
供給した前記低蒸気圧材料のガスを含むガスからプラズマを生成し、該プラズマによって前記低蒸気圧材料から生成されるプリカーサを前記導電層に堆積させ、前記有機膜を形成する工程と、
を有する半導体製造方法。 A first step of etching the insulating film on the conductive layer of the object to be processed into a mask pattern to expose the conductive layer in the recesses of the formed insulating film;
A second step of forming an organic film in the recess of the insulating film where the conductive layer is exposed,
The second step is
Holding the inside of the chamber at a predetermined pressure, cooling the stage to a temperature of −20° C. or lower, and installing the object to be treated on the stage;
Supplying a gas containing a gas of a low vapor pressure material to the inside of the chamber;
Generating plasma from the gas containing the gas of the supplied low vapor pressure material , depositing a precursor generated from the low vapor pressure material by the plasma on the conductive layer , and forming the organic film,
A method of manufacturing a semiconductor having.
請求項１に記載の半導体製造方法。 The semiconductor manufacturing method according to claim 1.
請求項１又は２に記載の半導体製造方法。 In the second step, the fluid organic film having a film thickness of 4 nm or more is formed.
The semiconductor manufacturing method according to claim 1 .
請求項１〜３のいずれか一項に記載の半導体製造方法。 The semiconductor manufacturing method according to claim 1.
前記洗浄装置は、前記有機膜を除去する、
請求項４に記載の半導体製造方法。 After performing the second step, the object to be processed is transported to the cleaning device under an atmospheric environment,
The cleaning device removes the organic film,
The semiconductor manufacturing method according to claim 4 .
請求項５に記載の半導体製造方法。 The semiconductor manufacturing method according to claim 5.
請求項１〜６のいずれか一項に記載の半導体製造方法。 The low vapor pressure material gas is a carbon-containing gas,
Semiconductor manufacturing method according to any one of claims 1 to 6.
請求項１〜７のいずれか一項に記載の半導体製造方法。 The gas of the low vapor pressure material is any one of C 4 F 8 , C 4 F 6 , and isopropyl alcohol (IPA),
Semiconductor manufacturing method according to any one of claims 1-7.
前記制御部は、
被処理体の導電層の上の絶縁膜をマスクのパターンにエッチングし、形成した前記絶縁膜の凹部に前記導電層を露出させ、
前記導電層が露出した絶縁膜の凹部に有機膜を形成し、
前記有機膜の形成では、
チャンバの内部を所定の圧力に保持し、ステージを−２０℃以下の温度に冷却し、該ステージの上に被処理体を設置し、
前記チャンバの内部に低蒸気圧材料のガスを含むガスを供給し、
供給した前記低蒸気圧材料のガスを含むガスからプラズマを生成し、該プラズマに含まれ、前記低蒸気圧材料から生成されるプリカーサを前記導電層に堆積させ、前記有機膜を形成することを制御する、
プラズマ処理装置。 A plasma processing apparatus having a stage on which an object to be processed is mounted, a gas supply unit for supplying gas, and a control unit,
The control unit is
The insulating film on the conductive layer of the object to be processed is etched into a mask pattern to expose the conductive layer in the recesses of the formed insulating film,
An organic film is formed in the recess of the insulating film where the conductive layer is exposed,
In the formation of the organic film,
The inside of the chamber is maintained at a predetermined pressure, the stage is cooled to a temperature of −20° C. or lower, and the object to be processed is placed on the stage,
A gas containing a low vapor pressure material gas is supplied to the inside of the chamber,
A plasma is generated from the supplied gas containing the low vapor pressure material gas, and a precursor contained in the plasma and generated from the low vapor pressure material is deposited on the conductive layer to form the organic film. Control,
Plasma processing equipment.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107105617A TWI761455B (en) | 2017-02-28 | 2018-02-14 | Semiconductor manufacturing method and plasma processing apparatus |
| KR1020180021733A KR102526306B1 (en) | 2017-02-28 | 2018-02-23 | Semiconductor manufacturing method and plasma processing apparatus |
| US15/903,466 US10504741B2 (en) | 2017-02-28 | 2018-02-23 | Semiconductor manufacturing method and plasma processing apparatus |
| CN201810167763.3A CN108511389B (en) | 2017-02-28 | 2018-02-28 | Semiconductor manufacturing method and plasma processing apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017036891 | 2017-02-28 | ||
| JP2017036891 | 2017-02-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018142691A JP2018142691A (en) | 2018-09-13 |
| JP2018142691A5 true JP2018142691A5 (en) | 2020-07-16 |
| JP6742287B2 JP6742287B2 (en) | 2020-08-19 |
Family
ID=63526829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017201978A Active JP6742287B2 (en) | 2017-02-28 | 2017-10-18 | Semiconductor manufacturing method and plasma processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6742287B2 (en) |
| KR (1) | KR102526306B1 (en) |
| TW (1) | TWI761455B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7410065B2 (en) | 2020-03-19 | 2024-01-09 | 信越化学工業株式会社 | Bioelectrode, bioelectrode manufacturing method, and biosignal measurement method |
| JP7096279B2 (en) | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, board processing devices, programs, and board processing methods |
| JP2022075544A (en) | 2020-11-05 | 2022-05-18 | 信越化学工業株式会社 | Bioelectrode composition, bioelectrode, and manufacturing method of bioelectrode |
| JP2022164579A (en) | 2021-04-16 | 2022-10-27 | 信越化学工業株式会社 | Bio-electrode composition, bio-electrode and manufacturing method of bio-electrode |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270586A (en) * | 2001-03-08 | 2002-09-20 | Tokyo Electron Ltd | Etching method of organic based insulating film and dual damascene process |
| KR20050055074A (en) * | 2003-10-07 | 2005-06-13 | 삼성전자주식회사 | Method of manufacturing shallow trench isolation with hf vapor etching process |
| WO2007095972A1 (en) * | 2006-02-24 | 2007-08-30 | Freescale Semiconductor, Inc. | Semiconductordevice including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprissing multiple organic components for use in a semiconductor device |
| WO2009060541A1 (en) * | 2007-11-09 | 2009-05-14 | Canon Anelva Corporation | Inline-type wafer conveyance device |
| JP2011151057A (en) * | 2010-01-19 | 2011-08-04 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device |
| JP5490753B2 (en) * | 2010-07-29 | 2014-05-14 | 東京エレクトロン株式会社 | Trench filling method and film forming system |
| JP6022490B2 (en) | 2013-08-27 | 2016-11-09 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing system, and storage medium |
| JP6140576B2 (en) | 2013-08-27 | 2017-05-31 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing system, and storage medium |
| JP5937632B2 (en) | 2014-02-06 | 2016-06-22 | 東京エレクトロン株式会社 | Substrate processing method, pre-processing apparatus, post-processing apparatus, substrate processing system, and storage medium |
| TWI739285B (en) * | 2014-02-04 | 2021-09-11 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | Selective deposition of metals, metal oxides, and dielectrics |
| US10049921B2 (en) * | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
| JP6425517B2 (en) | 2014-11-28 | 2018-11-21 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus and storage medium |
-
2017
- 2017-10-18 JP JP2017201978A patent/JP6742287B2/en active Active
-
2018
- 2018-02-14 TW TW107105617A patent/TWI761455B/en active
- 2018-02-23 KR KR1020180021733A patent/KR102526306B1/en active IP Right Grant
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