JP2018141720A - Sensing device, sensing system and manufacturing method of sensing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sensing device, a sensing system and a manufacturing method of the sensing device in which a measurement range is widened.SOLUTION: A sensing device comprises: a beam layer at least one end of which is supported by a spacer; a functional fluid layer which contacts with the beam layer in which functional fluid is encapsulated in an elastic body; an application part which applies an electromagnetic field to the functional fluid; and a detection part which detects an amount of deflection of the beam layer. The electromagnetic field is constructed so as to determine a spring constant of the functional fluid layer, and configure, when external force is applied to the beam, a measurement range of the external force based on the amount of deflection detected by the detection part.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a sensing device, a sensing system, and a method for manufacturing the sensing device.

  Sensing devices such as tactile sensors are used in various fields. For example, in the case of a tactile sensor provided on an arm of a robot, for example, pressure or shear force applied to the contact surface of the object is detected so that the arm does not damage surrounding objects or humans. Such a tactile sensor can detect pressure or shear force in a relatively wide measurement range, for example, from a relatively small force for determining the presence or absence of contact to a relatively large force for crushing an object, for example. Is desirable. Note that the measurement range of the tactile sensor or the like is sometimes called a measurement range.

  An example of a tactile sensor includes a cantilever that deforms when an external force is applied, and a piezoresistive element provided near the base of the cantilever. In the case of this tactile sensor, the measurement range in which an external force can be detected is determined according to the spring constant of the cantilever. That is, if the spring constant of the cantilever is relatively small to detect a relatively small force and the cantilever is easily bent, the sensitivity of the tactile sensor is improved. However, if a relatively large force is applied to the cantilever beam that is easily bent, the cantilever beam is deformed relatively greatly, and the strength of the cantilever beam may be insufficient and may be damaged. On the other hand, if the spring constant of the cantilever is relatively large to detect a relatively large force and the cantilever is difficult to bend, the sensitivity of the tactile sensor decreases. In addition, when a relatively small force is applied to a cantilever beam that is difficult to bend, the cantilever beam is hardly deformed, and therefore a relatively small force may not be accurately detected. As described above, in the case of this tactile sensor, since the strength of the cantilever and the sensitivity of the tactile sensor are in a trade-off relationship, it is not possible to widen the measurement range without sacrificing one of the strength and the sensitivity. difficult.

  An example of a cantilever of a scanning probe microscope has means for changing a spring constant (see, for example, Patent Document 2). In the case of this cantilever, the spring constant is changed by deforming the piezoelectric layer on the cantilever to give the cantilever compression or tensile stress. However, even when a voltage is applied to the piezoelectric layer, the rigidity of the piezoelectric layer itself hardly changes. Therefore, the change in the rigidity of the cantilever, that is, the spring constant is relatively small, and it is difficult to widen the measurement range.

JP 2011-169749 A JP 2006-78219 A JP 2010-157299 A JP 2002-372095 A

  In the conventional sensing device, it is difficult to widen the measurement range.

  Therefore, an object of one aspect is to provide a sensing device, a sensing system, and a manufacturing method of the sensing device that can widen the measurement range.

  According to one proposal, a beam layer having at least one end supported by a spacer, a functional fluid layer in contact with the beam layer, in which a functional fluid is sealed in an elastic body, and an electromagnetic field applied to the functional fluid. An application means; and a detection means for detecting a deflection amount of the beam layer, wherein the electromagnetic field determines a spring constant of the functional fluid layer, and the detection is performed when an external force is applied to the beam layer. There is provided a sensing device that sets a measurement range of the external force based on a deflection amount detected by the means.

  According to one aspect, the measurement range can be widened.

It is sectional drawing which shows typically Example 1 of a sensing apparatus. It is sectional drawing which shows the modification of Example 1 typically. It is a schematic diagram explaining the 1st example of the application part which applies a magnetic field. It is sectional drawing which shows the application part of FIG. 3 in detail. It is a top view of the cross section along the AA line of FIG. It is a top view of the cross section along the BB line of FIG. It is a schematic diagram explaining the 2nd example of the application part which applies a magnetic field. It is sectional drawing which shows the application part of FIG. 6 in detail. It is a top view of the cross section along the AA line of FIG. It is a top view of the cross section along the BB line of FIG. It is a schematic diagram explaining the 3rd example of the application part which applies a magnetic field. It is sectional drawing which shows the application part of FIG. 9 in detail. It is a top view of the cross section along the AA line of FIG. It is a top view of the cross section along the BB line of FIG. It is a schematic diagram explaining the 4th example of the application part which applies a magnetic field. It is sectional drawing which shows the application part of FIG. 12 in detail. It is a top view of the cross section along the AA line of FIG. It is a top view of the cross section along the BB line of FIG. It is a figure explaining an example of the manufacturing method of the sensing apparatus in Example 1. FIG. It is a figure explaining an example of the manufacturing method of the sensing apparatus in Example 1. FIG. It is a figure which shows the silicone tube which is an example of a beam layer. It is a figure which shows an example of the result of having measured the deformation and reaction force when different force is applied to the compression direction. It is a figure which shows an example of the result of having measured the deformation | transformation amount and reaction force when different force is applied to a shear direction. It is a figure which shows an example of the relationship between the force applied to a cantilever beam, and the deflection amount of a beam layer about the different external magnetic field applied to MR fluid layer. It is a flowchart explaining an example of a measurement process. It is a figure which shows an example of the relationship between the magnitude | size of an external magnetic field, and the measurement range of external force. It is sectional drawing which shows typically Example 2 of a sensing apparatus. It is sectional drawing which shows the modification of Example 2 typically. It is sectional drawing which shows typically Example 3 of a sensing apparatus. FIG. 6 is a cross-sectional view schematically showing a modification of Example 3. It is sectional drawing which shows typically Example 4 of a sensing apparatus. It is sectional drawing which shows typically Example 5 of a sensing apparatus. It is a figure which shows typically Example 6 of a sensing apparatus. FIG. 10 is a diagram schematically showing a modification of Example 6. FIG. 10 is a diagram illustrating an example of a manufacturing method of a sensing device in a modification example of Example 6. FIG. 10 is a diagram illustrating an example of a manufacturing method of a sensing device in a modification example of Example 6. It is a block diagram explaining one Example of a sensing system. It is sectional drawing which shows typically Example 7 of a sensing apparatus. FIG. 10 is a diagram illustrating an example of a sensor main body of a sensing device according to a seventh embodiment. FIG. 20 is a diagram illustrating an example of a sensing device package according to a seventh embodiment. It is a figure explaining an example of the manufacturing method of the sensing apparatus in Example 7. FIG. It is a figure explaining an example of the manufacturing method of the sensing apparatus in Example 7. FIG.

  In the disclosed sensing device, sensing system, and manufacturing method of the sensing device, an electromagnetic field is applied to the functional fluid in the functional fluid layer in which at least one end is in contact with the beam layer supported by the spacer and the functional fluid is sealed in the elastic body. Apply. The electromagnetic field determines the spring constant of the functional fluid layer, and sets the measurement range of the external force based on the amount of deflection of the beam layer that is detected when an external force is applied to the beam layer.

  Hereinafter, embodiments of the disclosed sensing device, sensing system, and manufacturing method of the sensing device will be described with reference to the drawings.

In the cross-sectional view, top view, and plan view described below, each part of the apparatus is schematically shown so that it can be easily seen. Therefore, the dimensions including the film thickness of each part accurately indicate the relationship between the relative dimensions of each part. It is not a thing.
Example 1
FIG. 1 is a cross-sectional view schematically showing a first embodiment of the sensing device. As shown in FIG. 1, the sensing device 1-1 includes a substrate 2, a spacer 3 provided on the substrate 2, a beam layer 4 provided on the spacer 3, and a magnetic material provided on the beam layer 4. (MR: Magneto Rheological) It has the fluid layer 5 and the detection part 7 which detects the deflection amount of the beam layer 4. As shown in FIG. The material of the substrate 2 is not particularly limited. The beam layer 4 and the spacer 3 can be formed of a resin such as polyimide or epoxy. The beam layer 4 may be formed of Si, for example. The MR fluid layer 5 includes, for example, an insulating elastic body 5a such as parylene, polyimide, or silicone resin, and an MR fluid 5b sealed in the elastic body 5a. The MR fluid 5b is an example of a functional fluid whose rheology behavior (or viscosity) is reversibly changed by applying a magnetic field that is an example of an electromagnetic field. The MR fluid layer 5 is a functional fluid layer. It is an example.

  In this example, one end of the beam layer 4 is supported by the spacer 3, and the MR fluid layer 5 is in contact with the beam layer 4. Therefore, the beam layer 4 and the MR fluid layer 5 form a cantilever beam 8 supported by the spacer 3, and when the external force F is applied to the tip portion of the cantilever beam 8, the cantilever beam 8 is broken by a broken line in FIG. Deforms as shown in. The detection unit 7 is an example of a detection unit that detects the amount of bending of the beam layer 4. In this example, the detection unit 7 is provided at the base portion of the cantilever beam 8 on the beam layer 4 and can be formed by, for example, a piezoresistive element (or a piezoelectric element). When an external force F is applied to the beam layer 4 and the cantilever beam 8 is deformed as shown by a broken line in FIG. 1 and the beam layer 4 is bent, the detection unit 7 expands as indicated by an arrow, and the piezoresistive element Resistance changes. Note that when the bending occurs in the direction opposite to the bending indicated by the broken line in FIG. 1, the detection unit 7 is compressed, and the resistance of the piezoresistive element changes. Thus, when a piezoresistive element is used, the bending amount of the beam layer 4 can be detected as a resistance value. The magnetic field applied to the MR fluid 5b determines the spring constant of the MR fluid layer 5, and the measurement range of the external force F based on the amount of deflection detected by the detection unit 7 when the external force F is applied to the cantilever 8 Set.

  FIG. 2 is a cross-sectional view schematically showing a modification of the first embodiment. In FIG. 2, the same parts as those of FIG. In this modification, an elastic material layer 9 that is in contact with the MR fluid layer 5 of the sensing device 1-1A is provided. That is, the MR fluid layer 5 is provided between the elastic material layer 9 and the beam layer 4. The thermal expansion coefficient and the film thickness of the elastic material layer 9 may be different from the thermal expansion coefficient and the film thickness of the beam layer 4. Further, when the external force F is applied to the tip portion of the elastic material layer 9, the cantilever 8 and the elastic material layer 9 are deformed as indicated by broken lines in FIG. That is, the external force F is transmitted to the cantilever 8 through the elastic material layer 9. Therefore, the elastic material layer 9 can function as a protective layer for protecting the MR fluid layer 5 and the like.

  Thus, in the sensing devices 1-1 and 1-1A, the cantilever 8 including the beam layer 4 and the MR fluid layer 5 can be formed using the vicinity of the detection unit 7 as a fulcrum.

  FIG. 3 is a schematic diagram illustrating a first example of an application unit that applies a magnetic field. As shown in FIG. 3, the MR fluid layer 5 has a structure in which an MR fluid 5b is enclosed in an elastic body 5a. In addition, magnetic bodies 21A and 21B formed by, for example, Ni foil or Ni plating are provided at opposite positions at both ends of the MR fluid 5b. Magnetic body 21A. A magnetic field can be applied to the MR fluid 5b between the magnetic bodies 21A and 21B by causing a current to flow through a coil 23 wound around a yoke 22 formed of, for example, Ni connected between 21B. The coil 23 is an example of the application unit 6 that applies a magnetic field to the MR fluid 5b. In this example, the application unit 6 applies a magnetic field in the length direction of the MR fluid layer 5 (left and right direction in FIG. 3). The application unit 6 is an example of an application unit that applies a magnetic field, which is an example of an electromagnetic field, to the MR fluid 5b.

  FIG. 4 is a cross-sectional view showing the application unit of FIG. 3 in more detail. 5A is a top view of a cross section taken along the line AA of FIG. 4, and FIG. 5B is a top view of a cross section taken along the line BB of FIG. FIG. 4 corresponds to a cross section taken along line CC in FIGS. 5A and 5B. As shown in FIG. 4, the coil 23 is wound around the yoke 22 and has a lower electrode 23A shown in FIG. 5A and an upper electrode 23B shown in FIG. 5B. Further, as shown in FIGS. 5A and 5B, the detection unit 7 formed of, for example, a Cu—Ni-based piezoresistive element or the like has a pair of detection electrodes 7A and 7B. One end of the yoke 22 is connected to the magnetic body 21A, and the other end of the yoke 22 is connected to the magnetic body 21B. The lower electrode 23A, the upper electrode 23B, and the detection electrodes 7A and 7B can be formed of, for example, an Au / Cu laminated film. The magnetic field applied to the MR fluid 5b between the magnetic bodies 21A and 21B provided at the opposing positions, which determines the spring constant of the MR fluid layer 5, can be controlled by the current flowing between the lower electrode 23A and the upper electrode 23B. It is. Further, the deflection amount of the beam layer 4 can be detected from the resistance value between the detection electrodes 7A and 7B.

  FIG. 6 is a schematic diagram illustrating a second example of an application unit that applies a magnetic field. In FIG. 6, the same parts as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted. As shown in FIG. 6, magnetic bodies 21B and 21A are provided in the elastic body 5a so as to sandwich the top and bottom of the MR fluid 5b. In this example, the application unit 6 applies a magnetic field in the thickness direction of the MR fluid layer 5 (vertical direction in FIG. 6).

  FIG. 7 is a cross-sectional view showing the application unit of FIG. 6 in more detail. 8A is a top view of a cross section taken along the line AA of FIG. 7, and FIG. 8B is a top view of a cross section taken along the line BB of FIG. FIG. 7 corresponds to a cross section taken along line CC in FIGS. 8A and 8B. 7, 8A and 8B, the same parts as those in FIGS. 4, 5A and 5B are denoted by the same reference numerals, and the description thereof is omitted. One end of the yoke 22 is connected to the magnetic body 21A, and the other end of the yoke 22 is connected to the magnetic body 21B. The magnetic field applied to the MR fluid 5b between the magnetic bodies 21A and 21B, which determines the spring constant of the MR fluid layer 5, can be controlled by the current flowing between the lower electrode 23A and the upper electrode 23B. Further, the deflection amount of the beam layer 4 can be detected from the resistance value between the detection electrodes 7A and 7B.

  FIG. 9 is a schematic diagram illustrating a third example of an application unit that applies a magnetic field. 9, parts that are the same as those shown in FIG. 3 are given the same reference numerals, and explanation thereof is omitted. As shown in FIG. 9, by closing the magnetic path with the yoke 22, a magnetic field can be efficiently applied by the MR fluid 5b. In this example, the application unit 6 applies a magnetic field in the length direction of the MR fluid layer 5 (left and right direction in FIG. 9).

  FIG. 10 is a cross-sectional view showing the application unit of FIG. 9 in more detail. 11A is a top view of a cross section taken along the line AA of FIG. 10, and FIG. 11B is a top view of a cross section taken along the line BB of FIG. FIG. 10 corresponds to a cross section taken along line CC in FIGS. 9A and 9B. 10, FIG. 11A and FIG. 11B, the same parts as those in FIG. 4, FIG. 5A and FIG. As shown in FIG. 11B, one end of the closed-loop yoke 22 is connected to the magnetic body 21A, and the other end of the yoke 22 is connected to the magnetic body 21B, so that a closed magnetic path can be formed. The magnetic field applied to the MR fluid 5b between the magnetic bodies 21A and 21B, which determines the spring constant of the MR fluid layer 5, can be controlled by the current flowing between the lower electrode 23A and the upper electrode 23B. Further, the deflection amount of the beam layer 4 can be detected from the resistance value between the detection electrodes 7A and 7B.

  FIG. 12 is a schematic diagram illustrating a fourth example of an application unit that applies a magnetic field. In FIG. 12, the same parts as those of FIG. As shown in FIG. 12, by closing the magnetic path with the yoke 22, a magnetic field can be efficiently applied by the MR fluid 5b. In this example, the application unit 6 applies a magnetic field in the thickness direction of the MR fluid layer 5 (vertical direction in FIG. 12).

  FIG. 13 is a cross-sectional view showing the application unit of FIG. 12 in more detail. 14A is a top view of a cross section taken along the line AA of FIG. 13, and FIG. 14B is a top view of a cross section taken along the line BB of FIG. FIG. 13 corresponds to a cross section taken along line CC in FIGS. 14A and 14B. 13, FIG. 14A, and FIG. 14B, the same code | symbol is attached | subjected to FIG. 4, FIG. 5A, and the same part as FIG. 5B, and the description is abbreviate | omitted. As shown in FIG. 14B, one end of the closed-loop yoke 22 is connected to the magnetic body 21A, and the other end of the yoke 22 is connected to the magnetic body 21B, so that a closed magnetic path can be formed. The magnetic field applied to the MR fluid 5b between the magnetic bodies 21A and 21B, which determines the spring constant of the MR fluid layer 5, can be controlled by the current flowing between the lower electrode 23A and the upper electrode 23B. Further, the deflection amount of the beam layer 4 can be detected from the resistance value between the detection electrodes 7A and 7B.

  Next, an example of the manufacturing method of the sensing apparatus in Example 1 is demonstrated with FIG.15 and FIG.16. For convenience of explanation, in this example, a case where a sensing device using the fourth example of the application unit is manufactured will be described. 15 and FIG. 16, the same parts as those in FIG. 13, FIG. 14A and FIG.

  First, as shown in FIG. 15, the spacer 3 and the beam layer 4 are sequentially formed on the substrate 2. Next, the detection part 7 is formed by implanting impurities into a part of the beam layer 4 made of, for example, Si. Next, the lower electrode 23 </ b> A of the coil 23 and the detection electrodes 7 </ b> A and 7 </ b> B of the detection unit 7 are formed on the beam layer 4. Next, the yoke 22 is formed on the lower electrode 23A.

  Next, as shown in FIG. 16, a coil 23 that spirally covers the periphery of the yoke 22 is formed between the lower electrode 23A and the upper electrode 23B. Next, the MR fluid layer 5 is formed on the detection unit 7. The MR fluid layer 5 includes an elastic body 5a, an MR fluid 5b and magnetic bodies 21A and 21B provided in the elastic body 5a. The magnetic bodies 21B and 21A are provided in the elastic body 5a so as to sandwich the top and bottom of the MR fluid 5b. The magnetic bodies 21 </ b> A and 21 </ b> B partially protrude outward from the elastic body 5 a, the magnetic body 21 </ b> A is connected to one end of the yoke 22, and the magnetic body 21 </ b> B is connected to the other end of the yoke 22. Next, a part of the spacer 3 (in this example, the right side portion in FIG. 16) is removed to form a cantilever 8 having the vicinity of the detection unit 7 as a fulcrum, as shown in FIGS. 13, 14A, and 14B. The sensing device shown is obtained.

  When manufacturing a sensing device using the first to third examples of the application unit, at least one of the MR fluid layer 5 and the yoke 22 may be changed as appropriate.

  Next, the relationship between the magnetic field applied to the MR fluid and the spring constant of the MR fluid layer will be described with reference to FIGS. Note that the spring constant of the MR fluid layer is smaller than that of the beam layer when no magnetic field is applied.

  FIG. 17 is a view showing a silicone tube as an example of a beam layer. As shown in FIG. 16, the deformation of the silicone tube 300 when a magnetic field is applied to the MR fluid 305 enclosed between the magnetic bodies 321A and 321b in the silicone tube 300 and a force is applied in the compression direction Fz and the shearing direction Fs. The amount and reaction force were measured. FIG. 18 is a diagram illustrating an example of a result of measuring a deformation amount and a reaction force when a force of 0 mT, 40 mT, and 66 mT is applied in the compression direction Fz. FIG. 19 is a diagram illustrating an example of a result of measuring a deformation amount and a reaction force when a force of 0 mT, 40 mT, and 66 mT is applied to the shear direction Fs. 18 and FIG. 19, the graph indicated by a broken line indicates a case where a force of 0 mT is applied, the graph indicated by a one-dot chain line indicates a case where a force of 40 mT is applied, and the graph indicated by a two-dot chain line indicates a case where a force of 66 mT is applied. . 18 and 19, the slope of the graph indicates the spring constant, and it has been confirmed that the spring constant of the MR fluid layer 5 varies greatly depending on the magnitude of the applied magnetic field.

  Next, an example of external force measurement processing by the sensing device will be described with reference to FIGS.

  FIG. 20 is a diagram showing an example of the relationship between the external force F (arbitrary unit) applied to the cantilever 8 and the deflection amount l (arbitrary unit) of the beam layer 4 with respect to the external magnetic field M applied to the MR fluid layer 5. is there. In FIG. 20, the values F0 to F2 of the external force F are F0 <F1 <F2, the values l0 to l3 of the deflection amount l of the beam layer 4 are l3 <l2 <l1 <l0, and the value of the external magnetic field M. M0 to M3 are M0 <M1 <M2 <M3.

  FIG. 21 is a flowchart for explaining an example of the measurement process. In FIG. 21, in step S <b> 1, for example, a processor (not shown) described later with FIG. 33 sets n to n = 3. In step S2, the processor controls the application unit 6 to apply the external magnetic field Mn to the MR fluid 5b. In step S3, it is determined whether or not the bending amount l of the beam layer 4 is smaller than the lower limit value ln. If the determination result is Yes, the process proceeds to step S4. If the determination result is No, the process proceeds to step S5. move on. In step S4, the processor decrements n to n = n−1, and the process returns to step S2. On the other hand, in step S5, the processor outputs a measured value of the external force F applied to the beam layer 4 detected by a predetermined arithmetic expression based on the deflection amount l.

In this way, the maximum deflection amount l _max of the beam layer 4 is determined in advance, and the lower limit value ln of the deflection amount l of the beam layer 4 is set according to the external magnetic field Mn. In this example, the value when the external magnetic field M is the largest is M3, the values become M2 and M1 as the external magnetic field M becomes smaller than M3, and the value when there is no external magnetic field M (= 0) becomes M0. . First, if the largest magnetic field M3 is applied and the deflection amount l of the beam layer 4 at the time of contact with the object is smaller than the lower limit l3 of the beam layer 4 when the magnetic field M3 is applied, the magnetic field is reduced. Then, it is compared again with the lower limit value in the magnetic field. When the deflection amount l of the beam layer 4 becomes smaller than the lower limit value in the magnetic field, the value of the external force F detected by a predetermined arithmetic expression corresponding to the magnitude of the magnetic field is output.

  FIG. 22 is a diagram illustrating an example of the relationship between the magnitude of the external magnetic field and the external force measurement range. In this example, the measurement range of the external force F when the external magnetic field M0 is applied is 0 ≦ F <F0, and the measurement range of the external force F when the external magnetic field M1 is applied is F0 ≦ F <F1, and the external magnetic field M2 is applied. In this case, the measurement range of the external force F is F1 ≦ F <F2,. It was confirmed that by changing the external magnetic field M as described above, a sensing device with high sensitivity and a wide measurement range can be provided.

According to the first embodiment and the modification, the measurement range can be widened. Moreover, the measurement range can be widened without sacrificing one of the strength of the cantilever and the sensitivity of the sensing device.
(Example 2)
In the first embodiment, the sensing device has a structure in which the MR fluid layer is stacked on the beam layer. On the other hand, Example 2 has a structure in which the MR fluid layer is laminated below the beam layer, or the MR fluid layer forms a part of the beam layer.

  FIG. 23 is a cross-sectional view schematically illustrating Embodiment 2 of the sensing device. In FIG. 23, the same parts as those in FIG. In FIG. 23, the MR fluid layer 5 of the sensing device 1-2 is disposed between the substrate 2 and the beam layer 4 so as to be adjacent to the spacer 3. That is, the MR fluid layer 5 is provided below the beam layer 4 and forms a cantilever 8 together with the beam layer 4.

  FIG. 24 is a cross-sectional view schematically showing a modification of the second embodiment. In FIG. 24, the same parts as those in FIG. In FIG. 24, the beam layer 4 of the sensing device 1-2 </ b> A is bridged between the pair of spacers 3. In FIG. 24, the detection unit 7 is disposed in the vicinity of the left spacer 3 on the beam layer 4. Further, the MR fluid layer 5 is disposed in the vicinity of the spacer 3 on the right side of the beam layer 4 and forms a cantilever 8 together with the beam layer 4. Thus, the MR fluid layer 5 that forms a part of the beam layer 4 is embedded on the lower surface side of the beam layer 4 or embedded in the beam layer 4, whether it is embedded on the upper surface side of the beam layer 4. It may be embedded.

  As described above, in the sensing devices 1-2 and 1-2A, the cantilever 8 including the beam layer 4 and the MR fluid layer 5 can be formed using the vicinity of the detection unit 7 as a fulcrum.

According to the second embodiment and the modification, the measurement range can be widened. Moreover, the measurement range can be widened without sacrificing one of the strength of the cantilever and the sensitivity of the sensing device.
(Example 3)
In the first and second embodiments, the cantilever is formed using the beam layer and the MR fluid layer. On the other hand, in Example 3, a doubly supported beam or a membrane is formed using a beam layer and an MR fluid layer. Thus, it is only necessary that at least one end of the beam layer is supported by the spacer.

  FIG. 25 is a cross-sectional view schematically illustrating Example 3 of the sensing device. In FIG. 25, the same parts as those in FIG. In FIG. 25, the beam layer 4 of the sensing device 1-3 is bridged between the pair of spacers 3. That is, both ends of the beam layer 4 are supported by the spacer 3, and the MR fluid layer 5 is in contact with the beam layer 4. The pair of detection units 7 are arranged in the vicinity of the left and right spacers 3 on the beam layer 4. The MR fluid layer 5 is provided on the beam layer 4 and forms a cantilever beam (or membrane) 18 together with the beam layer 4.

  FIG. 26 is a cross-sectional view schematically showing a modification of the third embodiment. In FIG. 26, the same parts as those in FIG. 25 are denoted by the same reference numerals, and the description thereof is omitted. In FIG. 26, the MR fluid layer 5 of the sensing device 1-3 </ b> A is disposed between the substrate 2 and the beam layer 4 between the pair of spacers 3. That is, the MR fluid layer 5 is provided below the beam layer 4 and forms a cantilever beam (or membrane) 18 together with the beam layer 4.

  As described above, in the sensing devices 1-3 and 1-3 A, the cantilever beam 18 including the beam layer 4 and the MR fluid layer 5 can be formed using the vicinity of the detection unit 7 as a fulcrum.

According to the third embodiment and the modification, the measurement range can be widened. In addition, the measurement range can be widened without sacrificing one of the strength of the doubly supported beam and the sensitivity of the sensing device.
(Example 4)
In Examples 1 to 3, the spring constant of the MR fluid layer is smaller than the spring constant of the beam layer when no magnetic field is applied. On the other hand, Example 4 further includes an elastic material layer having the same thermal expansion coefficient as the beam layer, and the spring constant of the elastic material layer is smaller than the spring constant of the beam layer.

  FIG. 27 is a cross-sectional view schematically showing a fourth embodiment of the sensing device. In FIG. 27, the same parts as those in FIG. In FIG. 27, the sensing device 1-4 is provided with an elastic material layer 31 having the same thermal expansion coefficient as that of the beam layer 4 and in contact with the MR fluid layer 5. In this example, the thickness of the elastic material layer 31 is the same as the thickness of the beam layer 4. That is, the MR fluid layer 5 is provided between the beam layer 4 and the elastic material layer 31 (or a pair of beam layers) having the same thermal expansion coefficient. Further, the spring constant of the elastic material layer 31 is smaller than the spring constant of the beam layer 4. Thereby, it is possible to provide a sensing device 1-4 that has excellent temperature characteristics by suppressing the occurrence of a stress difference due to a temperature change between the beam layer 4 and the MR fluid layer 5. The material, film thickness, structure, and characteristics (including the thermal expansion coefficient) of the elastic material layer 31 may be the same as the material, film thickness, structure, and characteristics of the beam layer 4.

  As described above, in the sensing device 1-4, the cantilever 8 including the beam layer 4, the MR fluid layer 5, and the elastic material layer 31 can be formed using the vicinity of the detection unit 7 as a fulcrum.

According to the fourth embodiment, the measurement range can be widened. Moreover, the measurement range can be widened without sacrificing one of the strength of the cantilever and the sensitivity of the sensing device.
(Example 5)
In the first to fourth embodiments, the detection unit is formed of a piezoresistive element. On the other hand, in Example 5, the detection part is formed of a capacitive element.

  FIG. 28 is a cross-sectional view schematically illustrating the fifth embodiment of the sensing device. In FIG. 28, the same parts as those in FIG. In FIG. 28, the detection unit 7 of the sensing device 1-5 is formed of a capacitor which is an example of a capacitive element. In FIG. 28, the capacitor has a well-known structure in which, for example, a pair of electrodes provided on the lower surface portion of the beam layer 4 and the upper surface portion of the substrate 2 facing the lower surface portion sandwich the elastic dielectric. The elastic dielectric may be air. In this example, when an external force F is applied to the beam layer 4 and the cantilever beam 8 is deformed as shown by a broken line in FIG. 28 and the beam layer 4 is bent, the distance between the pair of electrodes of the capacitor changes. The capacity changes. Thus, when a capacitor is used, the deflection amount of the beam layer 4 can be detected as a capacitance value.

  Thus, in the sensing device 1-5, the cantilever 8 including the beam layer 4 and the MR fluid layer 5 can be formed using the vicinity of the detection unit 7 as a fulcrum.

  According to the fifth embodiment, the measurement range can be widened. Moreover, the measurement range can be widened without sacrificing one of the strength of the cantilever and the sensitivity of the sensing device.

Needless to say, also in the first to fourth embodiments and the sixth embodiment described later, the detection unit 7 can be formed of a capacitive element. Accordingly, the measurement range can be widened without sacrificing one of the strength of the both-end supported beam and the sensitivity of the sensing device.
(Example 6)
In Examples 1 to 5, the functional fluid is an MR fluid, but the functional fluid may be an electrorheological (ER) fluid. The ER fluid is an example of a functional fluid whose rheological behavior (or viscosity) is reversibly changed by applying an electric field that is an example of an electromagnetic field.

  FIG. 29 is a diagram schematically illustrating a sixth embodiment of the sensing device. In FIG. 29, the ER fluid layer 50 of the sensing device 1-6 includes an insulating elastic body 50a such as parylene, polyimide, or silicone resin, and an ER fluid 50b sealed in the elastic body 50a. In addition, electrodes 201A and 210B formed of carbon, Au plating, or the like are provided at opposite positions at both ends of the ER fluid 50b. Thus, the structure of the ER fluid layer 50 in FIG. 29 is similar to the structure of the MR fluid layer 5 in FIG. The voltage source 51 is an example of an application unit 60 that applies an electric field to the ER fluid 50b via the electrodes 210A and 210B. The application unit 60 is an example of an application unit that applies an electric field, which is an example of an electromagnetic field, to the ER fluid 50b. In this example, the application unit 60 applies an electric field in the length direction of the ER fluid layer 50 (left and right direction in FIG. 29). In FIG. 29, the substrate, the spacer, the beam layer, and the detection unit are not shown, but for example, the same substrate, spacer, beam layer, and detection unit as in the first to fifth embodiments can be used. The electric field applied to the ER fluid 50b between the electrodes 210A and 210B, which determines the spring constant of the ER fluid layer 50, can be controlled by the voltage applied between the electrodes 210A and 210B. Further, the amount of bending of the beam layer 4 (not shown) can be detected from the resistance value between the detection electrodes 7A and 7B of the detection unit 7 (not shown) formed of, for example, a piezoresistive element.

  FIG. 30 is a diagram schematically illustrating a modification of the sixth embodiment. In FIG. 30, the sensing device 1-6A is provided with electrodes 210B and 210A at the upper and lower opposing positions of the ER fluid 50b. Thus, the structure of the ER fluid layer 50 of FIG. 30 is similar to the structure of the MR fluid layer 5 of FIG. The voltage source 51 is an example of an application unit 60 that applies an electric field to the ER fluid 50b via the electrodes 210A and 210B. In this example, the application unit 60 applies an electric field in the thickness direction of the ER fluid layer 50 (vertical direction in FIG. 30). The electric field applied to the ER fluid 50b between the electrodes 210A and 210B, which determines the spring constant of the ER fluid layer 50, can be controlled by the voltage applied between the electrodes 210A and 210B. Further, the amount of deflection of the beam layer 4 (not shown) can be detected from the resistance value between the detection electrodes 7A and 7B of the detection unit 7 (not shown).

  Note that the spring constant of the ER fluid layer 50 is smaller than the spring constant of the beam layer 4 when no electric field is applied.

  Next, an example of the manufacturing method of the sensing device in the modification of Example 6 is demonstrated with FIG.31 and FIG.32. 31 and 32, the same parts as those in FIGS. 15 and 16 are denoted by the same reference numerals, and the description thereof is omitted.

  First, as shown in FIG. 31, the spacer 3 and the beam layer 4 are sequentially formed on the substrate 2. Next, the detection part 7 is formed by implanting impurities into a part of the beam layer 4 made of, for example, Si. Next, a pair of control electrodes 230 </ b> A and 230 </ b> B made of, for example, an Au / Cu laminated film and detection electrodes 7 </ b> A and 7 </ b> B of the detection unit 7 are formed on the beam layer 4.

  Next, as shown in FIG. 32, the ER fluid layer 50 is formed on the detection unit 7. The ER fluid layer 50 includes an elastic body 50a, an ER fluid 50b and electrodes 210A and 210B provided in the elastic body 50a. The electrodes 210B and 210A are provided in the elastic body 50a so as to sandwich the upper and lower sides of the ER fluid 50b. The electrode 210A is in contact with the control electrode 230A, and the electrode 210B is in contact with the control electrode 230B. Next, a part of the spacer 3 (in this example, the right part in FIG. 32) is removed to form the cantilever 8 having the vicinity of the detection unit 7 as a fulcrum, and the sensing device 1-6A is obtained.

  In addition, what is necessary is just to change the ER fluid layer 50 suitably, when manufacturing the sensing apparatus 1-6 in Example 6. FIG.

  In addition, in the said Example 6 and a modification, it cannot be overemphasized that the structure of the said Examples 1 thru | or 5 and a modification may be combined suitably.

According to the sixth embodiment and the modification, the measurement range can be widened. In addition, the measurement range can be widened without sacrificing one of the strength of the cantilever or the double-supported beam and the sensitivity of the sensing device.
(Sensing system)
FIG. 33 is a block diagram illustrating an embodiment of the sensing system. A sensing system 100 illustrated in FIG. 33 includes a processor 101, a memory 102, an application unit 6, and the sensing device 1. The processor 101 executes a program stored in the memory 102 to control the electromagnetic field applied to the sensing device 1 by the applying unit 6 and the amount of bending of the beam layer of the sensing device 1 detected by the detecting unit 7. Based on this, it is possible to execute processing for measuring external force. The processor 101 can also execute the measurement process shown in FIG. The memory 102 is not particularly limited as long as it is a computer-readable recording medium, and can be formed by, for example, a semiconductor storage device, a magnetic recording medium, an optical recording medium, a magneto-optical recording medium, or the like. In this example, the application unit 6 is separate from the sensing device 1 and is provided outside the sensing device 1. However, at least a part of the application unit 6 may be provided in the sensing device 1.

  When the functional fluid sealed in the functional fluid layer of the sensing device 1 is an MR fluid, the processor 101 applies the application unit 6 to the MR fluid so that the MR fluid layer has a target spring constant. Control the magnetic field. In this case, the processor 101 controls, for example, a current that flows through a coil that forms the application unit 6. The processor 101 measures the external force applied to the beam layer by a predetermined arithmetic expression based on the bending amount of the beam layer detected by the detection unit 7 of the sensing device 1.

  On the other hand, when the functional fluid sealed in the functional fluid layer of the sensing device 1 is an ER fluid, the processor 101 sets the application unit 6 to the ER fluid so that the ER fluid layer has a target spring constant. Control the applied electric field. In this case, the processor 101 controls, for example, the voltage applied between the electrodes or the magnetic material sandwiching the ER fluid from the voltage source forming the application unit 6. The processor 101 measures the external force applied to the beam layer by a predetermined arithmetic expression based on the bending amount of the beam layer detected by the detection unit 7 of the sensing device 1.

  Thus, the electromagnetic field determines the spring constant of the functional fluid layer, and sets the measurement range of the external force based on the deflection amount detected by the detection unit 7 when the external force is applied to the beam layer. Therefore, the processor 101 controls the spring constant of the functional fluid layer by controlling the electromagnetic field, and the external force measurement range based on the amount of deflection detected by the detection unit 7 when an external force is applied to the beam layer can be varied. An example of control means for setting is formed.

  According to such a sensing system 100, the measurement range of the sensing device can be widened. In addition, the measurement range can be widened without sacrificing one of the strength and sensitivity of the cantilever or the double-supported beam of the sensing device.

In addition, although the sensing apparatus in the said Example 1 thru | or 6 is an example of a tactile sensor, a sensing apparatus may form a semiconductor strain gauge, an acceleration sensor, a force sensor, a gyro sensor, etc.
(Example 7)
In the first to sixth embodiments, the functional fluid is disposed on the upper side or the lower side of the beam layer. In contrast, in Example 7, the functional fluid is disposed above and below the beam layer. A part of the beam layer is surrounded by the functional fluid.

  FIG. 34 is a cross-sectional view schematically showing a seventh embodiment of the sensing device. In FIG. 34, the left diagram is a transverse section of the sensing device, and the right diagram is a longitudinal section of the sensing device along line DD in the left diagram. In FIG. 34, the same parts as those in FIG. The seventh embodiment of the sensing device can form an example of a semiconductor strain gauge that uses the piezoresistance effect in which the electrical resistivity of the semiconductor changes due to stress.

  As illustrated in FIG. 34, the sensing device 1-7 includes a package 71 having a storage portion 71A and an elastic material layer 72 that seals the package 71. The package 71 and the elastic material layer 72 are formed of an insulating elastic material, and can be formed of, for example, parylene, polyimide, silicone resin, or the like. The package 71 and the elastic material layer 72 may be formed of the same elastic material or different elastic materials. For example, the package 71 and the elastic material layer 72 have the same thermal expansion coefficient.

In the accommodating portion 71A of the package 71, the spacer 3, the oxide film 73, the beam layer 4, the detecting portion 7, the functional fluid 75, and the like are accommodated. The spacer 3 is made of, for example, Si. An oxide film 73 made of, for example, SiO ₂ is provided on the spacer 3. The beam layer 4 is made of Si, for example, and is supported on the spacer 3 via an oxide film 73. In this example, the beam layer 4 / oxide film 73 / spacer 3 is Si / SiO ₂ / Si, and forms an example of a semiconductor strain gauge having an SOI structure.

  The detection unit 7 is a piezoresistive element formed of, for example, doped Si. The detection electrodes 7A and 7B of the detection unit 7 are connected to the terminals 77A and 77B by wire bonding 76A and 76B. The conductor portions exposed on the beam layer 4 including the wire bondings 76A and 76B are covered and insulated by an insulating molding material 78 formed of, for example, epoxy. Terminals 77A and 77B include lead electrodes extending in the vertical direction in FIG. 34 through the package 71 from portions connected to wire bonding 76A and 76B.

  The electrode plates 310A and 310B form a magnetic pole when the functional fluid 75 is an MR fluid, and form an electrode when the functional fluid 75 is an ER fluid. The electrode plates 310A and 310B are provided along the longitudinal direction in the diagram on the left side of FIG. Further, the electrode plates 310A and 310B include a terminal portion extending left and right on the lower surface of the package 71 in the right side view of FIG. Therefore, when the functional fluid 75 is an MR fluid, for example, the electrode plates 310A and 310B forming a Ni magnetic material are arranged so as to sandwich the MR fluid. Similarly, when the functional fluid 75 is an ER fluid, for example, electrode plates 310A and 310B forming a stainless steel electrode are arranged so as to sandwich the ER fluid.

  The electrode plates 310A and 310B are provided, for example, so that the functional fluid 75 is sandwiched between the bottom surface of the storage portion 71A (that is, the upper surface in the storage portion 71A of the package 71) and the lower surface of the elastic material layer 72. May be.

  The functional fluid 75 is disposed at least above and below the beam layer 4, and a part of the beam layer 4 is surrounded by the functional fluid 75. In this example, the functional fluid 75 is also arranged on the left and right of the beam layer 4 in the right side of FIG. However, the surfaces of the beam layer 4, the detection unit 7, and the detection electrodes 7A and 7B are covered with an insulating film 73A by a certain area so that the functional fluid 75 does not contact the detection electrodes 7A and 7B. .

  The package 71 is provided with an injection port 71B used when injecting the functional fluid 75 into the storage portion 71A. After the injection of the functional fluid 75, for example, a sealing material 79 formed of an epoxy resin is provided. It is blocked by The functional fluid 75 may be an MR fluid or an ER fluid. In this example, the application unit 6 that applies a magnetic field when the functional fluid 75 is an MR fluid, or the application unit 60 that applies an electric field when the functional fluid 75 is an ER fluid is provided outside the package 71. Is provided. However, at least a part of the application unit 6 or the application unit 60 may be provided in the package 71.

  The elastic material layer 72 covers the storage portion 71A and seals the spacer 3, the oxide film 73, the beam layer 4, the detection portion 7, the functional fluid 75, the electrode plates 310A, 310B, and the like in the package 71. Stop. The elastic material layer 72 is bonded to the package 71 with an adhesive, for example. Since the package 71 and the elastic material layer 72 enclose the functional fluid 75 in the accommodating portion 71A, the elastic body 5a enclosing the MR fluid 5b in the first to fifth embodiments or the ER fluid 50b in the sixth embodiment. Corresponds to the elastic body 50a.

  In this example, the beam layer 4 forms a cantilever beam, but the beam layer 4 may form a cantilever beam. Further, the shape of the sensing device 1-7 is not limited to the rectangular parallelepiped as shown in FIG.

  The electromagnetic field applied to the functional fluid 75 by the application unit 6 or the application unit 60 determines the spring constant of the sealed package formed by the package 71 and the elastic material layer 72, and applies to the sealed package (and the beam layer 4). A measurement range of the external force based on the amount of deflection detected by the detection unit 7 when an external force is applied is set.

  FIG. 35 is a diagram illustrating an example of a sensor main body of the sensing device according to the seventh embodiment, and FIG. 36 is a diagram illustrating an example of a package of the sensing device according to the seventh embodiment. 37 and 38 are diagrams for explaining an example of the manufacturing method of the sensing device in the seventh embodiment. 35 to 38, the same portions as those in FIG. 34 are denoted by the same reference numerals, and the description thereof is omitted.

  The upper view, the lower view, and the lower right view in FIG. 35 are a plane, a transverse section, and a longitudinal section of the sensor body including the beam layer 4 and the like, respectively. Further, the left side view and the right side view of FIG. 36 are a transverse section and a longitudinal section of the package, respectively. In the package 71 shown in FIG. 36, electrode plates 310A and 310B are formed.

  In the manufacturing method of the sensing device in the first embodiment, the MR fluid layer 5 in which the MR fluid 5b is sealed in advance by the elastic body 5a is used. In the sensing device manufacturing method according to the modification of the sixth embodiment, the ER fluid layer 50 in which the ER fluid 50b is sealed in advance by the elastic body 50a is used. That is, in the manufacturing method described above, a functional fluid layer in which a functional fluid is sealed in advance by an elastic body is used. On the other hand, in the manufacturing method of the sensing device according to the seventh embodiment, the functional fluid is sealed in the packaging process.

  First, a sensor body as shown in FIG. 35 and a package as shown in FIG. 36 are prepared and prepared.

  Next, as shown in FIG. 37, the sensor main body shown in FIG. 35 is fixed in the accommodating portion 71A of the package 71 shown in FIG. In FIG. 37, as in the case of FIG. 34, the left side is a cross section of the sensing device, and the right side is a longitudinal section of the sensing device in the left side (along the same line as the DD line in FIG. 34). Surface.

  Next, the detection electrodes 7A and 7B of the detection unit 7 and the terminals 77A and 77B are electrically connected by wire bonding 76A and 76B. Further, the surfaces of the beam layer 4, the detection unit 7, and the detection electrodes 7A and 7B are covered with an insulating film 73A by a certain area.

  Next, the conductor material exposed on the beam layer 4 such as the regions of the wire bonding 76A and 76B, the detection electrodes 7A and 7B to which the wire bonding 76A and 76B are connected, and the regions of the terminals 77A and 77B are connected by the molding material 78. Cover and insulate. In this state, the surfaces of the detection unit 7 and the detection electrodes 7A and 7B are covered with the insulating film 73A, the regions of the detection electrodes 7A and 7B to which the wire bonding 76A and 76B and the wire bonding 76A and 76B are connected, and the terminals 77A, The region 77B is covered with a molding material 78. Accordingly, since the detection unit 7, the detection electrodes 7A and 7B, the wire bondings 76A and 76B, and the terminals 77A and 77B are not exposed on the surface of the beam layer 4, the functional fluid 75 is placed in the storage unit 71A as described later. Even if injected, it does not come into contact with the functional fluid 75.

  Next, as shown in FIG. 38, the elastic material layer 72 is bonded to the package 71 with, for example, an adhesive so as to cover the storage portion 71A. Next, the functional fluid 75 is injected into the storage portion 71A from the inlet 71B of the package 71. In this state, a part of the beam layer 4 is surrounded by the functional fluid 75. Further, the functional fluid 75 is sandwiched between the opposing inner surfaces of the storage portion 71A by electrode plates 310A and 310B provided along the longitudinal direction in the left side view of FIG. After the functional fluid 75 is injected, the inlet 71 </ b> B is closed with a sealing material 79. As a result, the sensor main body and the functional fluid 75 are sealed in the storage portion 71A by the package 71 and the elastic material layer 72 to form a sealed package.

  According to the seventh embodiment, the measurement range can be widened. In addition, the measurement range can be widened without sacrificing one of the strength of the cantilever or the double-supported beam and the sensitivity of the sensing device.

  Needless to say, in the seventh embodiment, the structures of the first to sixth embodiments and the modified examples may be appropriately combined.

  For example, the acceleration of a weight attached to the other end of a spring with one end fixed can be measured by detecting the displacement of the weight if the spring constant and the weight mass are known. For measuring the displacement of the weight, a change in electrical resistance due to the piezoresistance effect, a change in capacitance, or the like can be used. Further, when a spring with a weight is vibrated at a resonance frequency and acceleration occurs in the weight, the stress applied to the spring changes, so that the resonance frequency of the spring changes. Therefore, the acceleration may be detected by detecting a change in the resonance frequency of the spring. In the seventh embodiment of the sensing device, an example of such an acceleration sensor can be formed by forming the spring in a sealed package. Furthermore, a triaxial acceleration sensor can be formed by providing the seventh embodiment of the sensing device for each of the three axes orthogonal to each other.

  Similarly, the seventh embodiment of the sensing device can form an example of a force sensor that measures a part of a tactile sensation that indicates the magnitude and direction of force and torque (moment) by a three-dimensional space vector. In this case, if the detectors 7 are provided at corresponding positions on both surfaces of the beam layer 4, the detector 7 on the other surface of the beam layer 4 is compressed when the detector 7 on one surface of the beam layer 4 expands. Is done. In this case, since the sign of the amount of deflection detected by the pair of detection units 7 is reversed, the amount of displacement is measured using a bridge circuit or the like, and the shearing force applied to the sensing device 1-7 is detected. Can do.

  Similarly, the seventh embodiment of the sensing device can form an example of a gyro sensor that detects an angle (or posture), angular velocity, angular acceleration, or the like of an object. For example, in a tuning fork-type gyro sensor that vibrates a pair of tuning forks that operate in resonance and detects a deviation from the vibration surface to generate an angular velocity signal, two orthogonal vibration modes are electrically driven independently. To detect. Accordingly, in the seventh embodiment of the sensing device, a tuning fork gyro sensor can be formed by forming a pair of tuning forks with a pair of sealed packages.

The following additional notes are further disclosed with respect to the embodiment including the above examples.
(Appendix 1)
A beam layer having at least one end supported by a spacer;
A functional fluid layer in contact with the beam layer, in which a functional fluid is sealed in an elastic body;
Applying means for applying an electromagnetic field to the functional fluid;
Detecting means for detecting the amount of bending of the beam layer;
With
The electromagnetic field determines a spring constant of the functional fluid layer and sets a measurement range of the external force based on a deflection amount detected by the detection means when an external force is applied to the beam layer. A sensing device.
(Appendix 2)
The functional fluid layer has a pair of magnetic bodies provided at opposing positions in the elastic body,
The functional fluid is a magnetic fluid sandwiched between the pair of magnetic bodies,
The sensing device according to appendix 1, wherein the applying means applies a magnetic field to the functional fluid via the pair of magnetic bodies.
(Appendix 3)
The functional fluid layer has a pair of electrodes provided at opposing positions in the elastic body,
The functional fluid is an electrorheological fluid sandwiched between the pair of electrodes,
The sensing device according to claim 1, wherein the applying means applies an electric field to the functional fluid via the pair of electrodes.
(Appendix 4)
Any one of Supplementary notes 1 to 3, wherein the detection means includes a piezoresistive element that is provided in the vicinity of a fulcrum of the beam layer and detects the deflection amount from a physical change of the functional fluid layer. The sensing device according to 1.
(Appendix 5)
The sensing device according to any one of appendices 1 to 3, wherein the detection means includes a capacitive element that detects the deflection amount from a change in capacitance of the functional fluid layer.
(Appendix 6)
An elastic material layer in contact with the functional fluid layer;
The sensing device according to any one of appendices 1 to 5, wherein the functional fluid layer is provided between the beam layer and the elastic material layer.
(Appendix 7)
The elastic material layer has the same thermal expansion coefficient as the beam layer, and has a spring constant smaller than that of the beam layer,
The sensing device according to claim 6, wherein a spring constant of the functional fluid layer is smaller than a spring constant of the beam layer when the electromagnetic field is not applied.
(Appendix 8)
The sensing device according to any one of appendices 1 to 7, wherein the beam layer and the functional fluid layer have a cantilever beam supported by a single spacer.
(Appendix 9)
The sensing device according to any one of appendices 1 to 7, wherein the beam layer and the functional fluid layer include a doubly supported beam or a membrane supported by a pair of spacers.
(Appendix 10)
A package having a storage section for storing the spacer, the beam layer, the functional fluid, and the detection means;
An elastic material layer that is bonded to the package so as to cover the storage portion and encloses the functional fluid in the storage portion;
The sensing device according to appendix 8 or 9, further comprising:
(Appendix 11)
The sensing device according to appendix 10, wherein a part of the beam layer is surrounded by the functional fluid.
(Appendix 12)
Further comprising a substrate,
The spacer is provided on the substrate;
The sensing device according to any one of appendices 1 to 9, wherein the functional fluid layer is provided between the beam layer and the substrate so as to be adjacent to the spacer.
(Appendix 13)
A beam layer having at least one end supported by a spacer; a functional fluid layer in contact with the beam layer and having a functional fluid sealed in an elastic body; an application means for applying an electromagnetic field to the functional fluid; and the beam layer A sensing means for detecting the amount of deflection of
Control means for controlling the electromagnetic field applied by the application means to the functional fluid;
With
The control means controls the spring constant of the functional fluid layer by controlling the electromagnetic field, and measures the external force based on a deflection amount detected by the detection means when an external force is applied to the beam layer. Sensing system characterized by variably setting range.
(Appendix 14)
The functional fluid of the sensing device is a magnetic fluid,
The sensing system according to appendix 13, wherein the applying means of the sensing device applies a magnetic field to the functional fluid.
(Appendix 15)
The functional fluid of the sensing device is an electrorheological fluid,
The sensing system according to appendix 13, wherein the applying means of the sensing device applies an electric field to the functional fluid.
(Appendix 16)
The sensing system according to any one of appendices 13 to 15, wherein the detection means of the sensing device includes a piezoresistive element that detects the amount of deflection from a physical change of the functional fluid layer. .
(Appendix 17)
The sensing system according to any one of appendices 13 to 15, wherein the detection means of the sensing device includes a capacitive element that detects the amount of deflection from a change in capacitance of the functional fluid layer.
(Appendix 18)
A spacer and a beam layer are sequentially formed on the substrate,
On the beam layer, a detection unit for detecting the deflection amount of the beam layer, an electrode of the detection unit and a functional fluid layer are sequentially formed,
The functional fluid layer has an elastic body and a functional fluid sealed in the elastic body,
A part of the spacer is removed and the vicinity of the detection unit is used as a fulcrum to form a cantilever or a cantilever beam including the beam layer and the functional fluid layer.
A method for manufacturing a sensing device.
(Appendix 19)
A beam layer at least one end of which is supported by a spacer; a detection unit provided on the beam layer for detecting a deflection amount of the beam layer; and an electrode of the detection unit; and the beam layer, the detection unit, and a surface of the electrode A sensor body having an insulating film covering only a certain area,
Create a package with a storage part, terminals, inlets, and opposing electrode plates,
Fixing the sensor body in the housing of the package;
Electrically connecting the terminal and the electrode;
Covering and insulating the conductive portion exposed on the beam layer including the electrically connected portion with a molding material,
Adhering an elastic material layer to the package;
Injecting a functional fluid from the inlet into the storage portion to surround a part of the beam layer with the functional fluid, and sandwiching the functional fluid between the opposing electrode plates,
Sealing the injection port with a sealing material and enclosing the functional fluid in the storage portion to form a sealed package;
A method for manufacturing a sensing device.
(Appendix 20)
20. The method for manufacturing a sensing device according to appendix 18 or 19, wherein the functional fluid is a magnetic fluid or an electrorheological fluid.

  Although the disclosed sensing device, sensing system, and method for manufacturing the sensing device have been described above, the present invention is not limited to the above-described embodiments, and various modifications and improvements can be made within the scope of the present invention. Needless to say.

1-1 to 1-7, 1-1A to 1-3A, 1-6A Sensing device 2 Substrate 3 Spacer 4 Beam layer 5 MR fluid layer 5a, 50a Elastic body 5b MR fluid 6, 60 Application unit 7 Detection unit 8 Piece Cantilever 9, 31 Elastic material layer 18 Dual-supported beam 50 ER fluid layer 50 b ER fluid 71 Package 71 A Storage portion 72 Elastic material layer 75 Functional fluid 100 Sensing system 101 Processor 102 Memory 310 A, 310 B Electrode plate

Claims (5)

A beam layer having at least one end supported by a spacer;
A functional fluid layer in contact with the beam layer, in which a functional fluid is sealed in an elastic body;
Applying means for applying an electromagnetic field to the functional fluid;
Detecting means for detecting the amount of bending of the beam layer;
With
The electromagnetic field determines a spring constant of the functional fluid layer and sets a measurement range of the external force based on a deflection amount detected by the detection means when an external force is applied to the beam layer. A sensing device. The functional fluid layer has a pair of magnetic bodies provided at opposing positions in the elastic body,
The functional fluid is a magnetic fluid sandwiched between the pair of magnetic bodies,
The sensing device according to claim 1, wherein the applying unit applies a magnetic field to the functional fluid via the pair of magnetic bodies. The functional fluid layer has a pair of electrodes provided at opposing positions in the elastic body,
The functional fluid is an electrorheological fluid sandwiched between the pair of electrodes,
The sensing device according to claim 1, wherein the applying unit applies an electric field to the functional fluid through the pair of electrodes. A beam layer having at least one end supported by a spacer; a functional fluid layer in contact with the beam layer and having a functional fluid sealed in an elastic body; an application means for applying an electromagnetic field to the functional fluid; and the beam layer A sensing means for detecting the amount of deflection of
Control means for controlling the electromagnetic field applied by the application means to the functional fluid;
With
The control means controls the spring constant of the functional fluid layer by controlling the electromagnetic field, and measures the external force based on a deflection amount detected by the detection means when an external force is applied to the beam layer. Sensing system characterized by variably setting range. A beam layer at least one end of which is supported by a spacer; a detection unit provided on the beam layer for detecting a deflection amount of the beam layer; and an electrode of the detection unit; and the beam layer, the detection unit, and a surface of the electrode A sensor body having an insulating film covering only a certain area,
Create a package with a storage part, terminals, inlets, and opposing electrode plates,
Fixing the sensor body in the housing of the package;
Electrically connecting the terminal and the electrode;
Covering and insulating the conductive portion exposed on the beam layer including the electrically connected portion with a molding material,
Adhering an elastic material layer to the package;
Injecting a functional fluid from the inlet into the storage portion to surround a part of the beam layer with the functional fluid, and sandwiching the functional fluid between the opposing electrode plates,
Sealing the injection port with a sealing material and enclosing the functional fluid in the storage portion to form a sealed package;
A method for manufacturing a sensing device.

Images