JP2018141195A - Apparatus and method for manufacturing laminated film and method for manufacturing thin film inductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a laminated film, capable of efficiently manufacturing a laminated film having only a specific thin film formed to be thinner than other films by a smaller-sized apparatus, and a method for manufacturing a thin film inductor.SOLUTION: A method for manufacturing a laminated film comprises: increasing the pressure of a second chamber 8 higher than that of a first chamber 6 in a sealable chamber 4 including the first chamber 6 and second chamber 8 communicably separated by a partition 10 in the inside; moving a substrate 12 from the first chamber 6 to the second chamber 8 in the inside of the chamber 4 to deposit an insulator film 32 on a magnetic film 31a formed in the first chamber 6 in the inside of the second chamber 8; and moving the substrate 12 from the second chamber 8 to the first chamber 6 in the inside of the chamber 4 to deposit a magnetic film 31a different from the magnetic film 31a positioned in the lower part on the insulator film 31a in the inside of the first chamber 6.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a multilayer film manufacturing apparatus and manufacturing method using a thin film forming apparatus such as a sputtering apparatus, and a thin film inductor manufacturing method.

  In order to realize a high-frequency compatible thin-film inductor, as a countermeasure against eddy current loss, the magnetic core is laminated with an electric insulating layer sandwiched between it, an inductance that depends on the magnetic properties of the magnetic material and the total thickness of the magnetic material, Current loss countermeasures must be compatible.

In the magnetic core of a general thin film inductor, the total thickness of the magnetic material is 2 to 5 μm, and it is manufactured by dividing it into 2 to 5 layers with an electric insulator film such as SiO ₂ . In this case, the film thickness per magnetic layer is 0.5 to 2 μm.

However, in order to cope with a high frequency exceeding 200 MHz, the thickness per magnetic layer needs to be 0.2 μm or less. A laminated structure of a magnetic layer (for example, CoZrTa) and an insulating layer (for example, SiO ₂ ) of a thin film inductor is generally obtained by sputtering.

  A method commonly used as a sputtering apparatus for forming a laminated structure is a so-called sheet type, in which each material is sequentially deposited in a dedicated sputtering chamber via a robot chamber. In this method, for example, there is no problem as long as the structure has two magnetic layers and one insulating layer.

  However, in this method, for example, if the configuration is 20 magnetic layers + 19 insulating layers, each layer goes through a robot chamber, so it takes a long time to make a laminated structure on one substrate. It is difficult to mass-produce.

  Therefore, it is also conceivable to form a laminated film using the apparatus shown in Patent Document 1. In the apparatus shown in Patent Document 1, a stacked structure of a plurality of types of materials can be made by arranging sputter targets concentrically and turning the substrate concentrically.

  However, in this method, for example, when a plurality of targets are arranged concentrically and a substrate is rotated to form a film thereon, only the thickness of the insulating layer constituting a part of the laminated film is thinned. Difficult to do. For example, it is assumed that four targets are arranged concentrically and a substrate is rotated to form a film thereon.

  When the deposition rate of the magnetic layer and the deposition rate of the insulating layer are the same, assuming that three targets are targets for the magnetic layer and one target is a target for the insulating layer The ratio of the thickness of the magnetic layer and the insulating layer is 3: 1. For this reason, when the laminated film is made to function as a core, the saturation magnetic flux density is only 75% when the entire core formed of a magnetic material is taken as 100%. For example, in order to increase the saturation magnetic flux density of the core to 95% of the magnetic substance alone, the ratio of the number of targets for the magnetic layer and the number of targets for the insulating layer needs to be 19: 1. There is a problem that the apparatus becomes large.

JP-A-62-060865

  The present invention has been made in view of such a situation, and an object of the present invention is to provide a laminated film in which only a specific thin film is formed thinner than the others, and can be efficiently manufactured with a relatively small apparatus. A film manufacturing apparatus and method, and a thin film inductor manufacturing method are provided.

In order to achieve the above object, a laminated film manufacturing apparatus according to the present invention comprises:
A chamber capable of sealing the interior;
A partition wall separating the inside of the chamber into a first chamber and a second chamber which can communicate with each other;
A gas inlet provided in the second chamber, the pressure of the second chamber being higher than the pressure of the first chamber;
A moving mechanism for movably holding a substrate between the first chamber and the second chamber inside the chamber;
A first thin film forming means provided in the first chamber for depositing the first thin film on the surface of the substrate;
A second thin film forming means provided in the second chamber for depositing a second thin film on the surface of the substrate.

  In the laminated film manufacturing apparatus according to the present invention, the pressure in the second chamber is set higher than the pressure in the first chamber. For example, in forming a thin film by a thin film method such as sputtering, the film forming speed decreases as the gas pressure increases. Therefore, the deposition rate is reduced inside the second chamber as compared to the inside of the first chamber. Therefore, the thickness of the thin film formed within the same time is thin inside the second chamber and thick inside the first chamber. Therefore, according to the laminated film manufacturing apparatus of the present invention, a laminated film in which only a specific thin film is formed thinner than the others can be efficiently manufactured with a relatively small apparatus.

  In addition, when a thin film is formed by a thin film method such as sputtering, the discharge limit power decreases as the gas pressure increases. Therefore, according to the laminated film manufacturing apparatus of the present invention, the first thin film can be formed with low power consumption.

  Preferably, the partition wall is provided with a gas flow control mechanism for controlling a gas flow from the second chamber toward the first chamber. By restricting the gas flow with the gas flow control mechanism, the differential pressure between the second chamber and the first chamber can be controlled. As a result, the second thin film formed inside the second chamber can be controlled. The thickness can be controlled.

Preferably, the laminated film manufacturing apparatus is
A first pressure sensor provided inside the first chamber for detecting the pressure inside the first chamber;
A second pressure sensor provided inside the second chamber for detecting the pressure inside the second chamber;
A control device that receives a detection signal of the first pressure sensor and a detection signal of the second pressure sensor, and controls a differential pressure between the pressure of the second chamber and the pressure of the first chamber within a predetermined range; And further.

  With this configuration, the differential pressure between the second chamber and the first chamber can be automatically controlled, and as a result, the thickness of the second thin film formed inside the second chamber can be accurately determined. Can be controlled.

The method for producing the laminated film of the present invention comprises:
A step of making the pressure of the second chamber higher than the pressure of the first chamber in a sealable chamber having a first chamber and a second chamber separated so as to communicate with each other by a partition wall;
The substrate is moved from the first chamber to the second chamber inside the chamber, and a second thin film is deposited on the first thin film formed in the first chamber inside the second chamber. A process of
The substrate is moved from the second chamber to the first chamber inside the chamber, and a first thin film is deposited on the second thin film inside the first chamber separately from the first thin film. And a step of causing.

  In the method for manufacturing a laminated film according to the present invention, the pressure in the second chamber is set higher than the pressure in the first chamber. For example, in forming a thin film by a thin film method such as sputtering, the film forming speed decreases as the gas pressure increases. Therefore, the deposition rate is reduced inside the second chamber as compared to the inside of the first chamber. Therefore, the thickness of the thin film formed within the same time is thin inside the second chamber and thick inside the first chamber. Therefore, according to the method for producing a laminated film of the present invention, a laminated film in which only a specific thin film is formed thinner than the others can be efficiently produced with a relatively small apparatus.

  In addition, when a thin film is formed by a thin film method such as sputtering, the discharge limit power decreases as the gas pressure increases. Therefore, according to the laminated film manufacturing method of the present invention, the first thin film can be formed with lower input power (deposition rate).

  Preferably, in the first chamber, the first thin film is formed in a plurality of layers, and thereafter, in the second chamber, a single layer of the second thin film is formed. By comprising in this way, the 1st thin film comprised by the multiple film | membrane pinched | interposed by a 2nd thin film while being able to form into a thin film the 2nd thin film of the single layer formed in the middle in a laminated film The thickness of can be further increased.

A method of manufacturing a thin film inductor according to the present invention includes:
A step of making the pressure of the second chamber higher than the pressure of the first chamber in a sealable chamber having a first chamber and a second chamber separated so as to communicate with each other by a partition wall;
The substrate is moved from the first chamber to the second chamber inside the chamber, and an insulator film is deposited on the magnetic film formed in the first chamber inside the second chamber. A process of
The substrate is moved from the second chamber to the first chamber inside the chamber, and a magnetic film is deposited on the insulator film in the first chamber separately from the magnetic film. And a step of causing.

  According to the method of manufacturing a thin film inductor of the present invention, an insulator film sandwiched between magnetic films in the stacking direction is an extremely thin multilayer magnetic film compared to a magnetic film. Can be manufactured automatically. In addition, according to the method for manufacturing a thin film inductor of the present invention, an insulator film can be formed with low power consumption. Furthermore, in the multilayer magnetic film obtained by the method of the present invention, since a thin insulator film exists at a predetermined pitch in the stacking direction in the multilayer magnetic film, eddy currents in the magnetic core can be prevented.

  Preferably, in the first chamber, the magnetic film is formed of a plurality of layers, and thereafter, in the second chamber, a single-layer insulator film is formed. With this configuration, a single-layer insulator film formed in the middle of the multilayer magnetic film can be formed thinner, and it is composed of a plurality of films sandwiched between insulator films in the stacking direction. It is possible to further increase the thickness of the magnetic film. As a result, a multilayer magnetic core that is multilayer and has a high ratio of the magnetic layer in the core can be provided at high speed and at low cost.

FIG. 1 is a schematic cross-sectional view of a laminated film manufacturing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along the line II-II shown in FIG. FIG. 3 is a schematic sectional view taken along line III-III shown in FIG. FIG. 4 is a schematic cross-sectional view showing an example of a laminated film obtained by the manufacturing method according to one embodiment of the present invention. FIG. 5 is a graph showing the relationship between the gas pressure and the deposition rate (deposition rate). FIG. 6 is a graph showing the relationship between gas pressure and discharge limit power. FIG. 7 is a graph showing the relationship between the number of laminated magnetic films and μ ′ / μ ″. FIG. 8 is a graph showing the relationship between the number of targets for forming the magnetic film and Bs of the laminated film.

Hereinafter, the present invention will be described based on embodiments shown in the drawings.
As shown in FIG. 1, a laminated film manufacturing apparatus 2 according to an embodiment of the present invention is a kind of sputtering apparatus, for example, and includes a chamber 4 that can be sealed inside. The interior of the chamber 4 is divided by a partition wall 10 into a first chamber 6 having a relatively large volume and a second chamber 8 having a relatively small volume.

  Inside the chamber 4, the first chamber 6 and the second chamber are not sealed and separated from each other by the partition wall 10 but separated from each other so as to communicate with each other. That is, the partition wall 10 may be provided with a single or a plurality of flow holes (gas flow control mechanisms) 10a, and the first chamber 6 and the second chamber 8 communicate with each other through the flow holes 10a. Yes.

  In addition, a rotary table (moving mechanism) on which a plurality of substrates 12 can be installed is installed inside the chamber 10 so as to be rotatable in the direction of arrow A shown in FIG. The turntable 14 rotates around its rotation center, and the substrate 12 arranged on the upper surface of the table 14 can be moved from the first chamber 6 to the second chamber 8. Alternatively, the rotary table 14 can be rotated about its rotation center, and the substrate 12 disposed on the upper surface of the table 14 can be moved from the second chamber 8 to the first chamber 6.

  Since the table 14 needs to be rotated, the lower end portion of the partition wall 10 is not in contact with the surface of the table 14, and a gap 10 b is generated between them. Even through the gap 10b, the first chamber 6 and the second chamber 8 communicate with each other. Therefore, the partition wall 10 is not necessarily provided with the flow hole 10a.

  As shown in FIG. 2, in this embodiment, four disk-shaped substrates 12 are detachably fixed to the upper surface of the turntable 14 at substantially equal intervals in the circumferential direction. At least one substrate 12 is positioned inside the second chamber 8 at the rotation stop position of the turntable 14. The other three substrates 12 are positioned inside the first chamber 6.

  A vacuum pump 20 is connected to the outside of the chamber 4 so as to communicate with the inside of the first chamber 6. It is preferable that an exhaust port (valve) in contact with the vacuum pump 20 is installed outside the closed chamber 4.

  The vacuum pump 20 operates so as to reduce the pressure inside the first chamber 6. Since the first chamber 6 and the second chamber 8 communicate with each other, when the pressure in the first chamber 6 is reduced, the pressure in the second chamber 78 is also reduced. A gas inlet 22 is provided in a part of the chamber 4 constituting the second chamber 8. A gas such as argon, krypton, or other rare gas can be introduced into the second chamber 8 from the gas inlet 22.

  The gas introduced into the second chamber 8 fills the inside of the second chamber 8, and then is introduced into the first chamber 6 through the flow hole 10a and the gap 10b. Therefore, the pressure in the second chamber 8 is, for example, 1.5 times or more, preferably 2 times or more, more preferably 4 times or more as compared with the pressure in the first chamber 6. However, the pressures in the first chamber 6 and the second chamber 8 are both preferably in the pressure range in which film formation by sputtering or the like is possible, and preferably in the range of 0.1 to 2.0 Pa. . The pressure in the second chamber 8 is preferably 2 to 4 times the pressure in the first chamber.

  In the present embodiment, in the first chamber 6, the first target (first) shown in FIG. 1 corresponds to the predetermined position where the rotary table 14 shown in FIG. 2 stops and the upper position corresponding to the three substrates 12. 1 thin film forming means) 31 is detachably fixed to the cathode located on the ceiling inner wall of the chamber 4. In the present embodiment, the three first targets 31 are all made of the same magnetic material, but may be made of different materials. Examples of the magnetic material constituting the first target 31 include a Co—Zr—Ta magnetic material, a nanocrystalline material such as NiFe, Sendust, Fe amorphous, and FeSiBNbCu.

  In the second chamber 8, the second target 32 (second thin film forming means) shown in FIG. 1 corresponds to the upper position corresponding to the single substrate 12 at a predetermined position where the turntable 14 shown in FIG. 2 stops. Is detachably fixed to the cathode located on the ceiling inner wall of the chamber 4. In the present embodiment, the second target 32 is made of an insulator different from the magnetic material. Examples of the insulator constituting the second target 32 include silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, boron nitride, tantalum oxide, and DLC.

  In the present embodiment, as shown in FIG. 3, the partition wall 10 is formed with a plurality of flow holes 10 a, and the flow holes 10 a are slidably mounted on the partition wall 10. The plate (gas flow control mechanism) 11 can be closed. The valve plate 11 is moved by a driving mechanism such as a motor, and can block some or all of the plurality of flow holes 10a. The movement of the valve plate 11 is controlled by a control device 50 that controls a driving mechanism such as a motor. By moving the valve plate 11, the flow of gas introduced from the second chamber 8 to the first chamber 6 is controlled, and the pressure difference between the second chamber 8 and the first chamber 6 can be controlled.

  As shown in FIG. 1, detection signals from the first pressure sensor 40 and the second pressure sensor 42 can be input to the control device 50. The first pressure sensor 40 can detect the internal pressure of the first chamber 6. The second pressure sensor 42 can detect the internal pressure of the second chamber 8. Detection signals detected by these sensors 40 and 42 are input to the control device 50. These sensors 40 and 42 are not particularly limited, and a vacuum gauge or the like is used.

  The control device 50 calculates the pressures of the chambers 6 and 8 and the pressure ratio or pressure difference of the second chamber 8 with respect to the first chamber 6 from the pressure signals detected by these sensors 40 and 42, and these numerical values. Is controlled within the predetermined range, the movement of the valve plate 11, the amount of gas supplied from the gas inlet 22, and / or the internal pressure of the chamber 4 by the vacuum pump 20 is controlled.

  In the present embodiment, the rotary table 14 shown in FIG. 2 is stopped so that the substrate 12 disposed thereon is positioned directly below the targets 31 and 32 shown in FIG. Sputtering on each substrate 12 by the above and 32 is performed for a predetermined time. As a result, the first thin film 31 a shown in FIG. 4 made of the material of the first target 31 is deposited on the surface of the substrate 12 located in the first chamber 6. Further, a second thin film 32 a shown in FIG. 4 made of the material of the second target 32 is deposited on the surface of the substrate 12 located in the second chamber 8.

  After that, the sputtering film formation is temporarily stopped, and the turntable 14 shown in FIG. 2 is rotated in the direction of arrow A or in the opposite direction so that the substrate 12 disposed thereon has the target 31 and the target shown in FIG. It stops so that it may be located just below 32. Thereafter, sputtering on each substrate 12 by these targets 31 and 32 is resumed at a predetermined time. In this embodiment, these operations are repeated.

  In the laminated film manufacturing method by the laminated film manufacturing apparatus 2 according to the present embodiment shown in FIG. 1, the pressure in the second chamber 8 is set higher than the pressure in the first chamber 6. For example, in forming a thin film by a thin film method such as sputtering, as shown in FIG. 5, the film forming speed (film forming rate) decreases as the gas pressure increases. For example, when the gas pressure increases from 0.2 Pa to 1 Pa, the film formation rate decreases by about 20% or more.

  Therefore, the film forming speed is reduced in the second chamber 8 as compared with the inside of the first chamber 6. Therefore, the thickness of the thin film formed in the same time is thin in the second chamber 8 and thick in the first chamber 6. Therefore, according to the laminated film manufacturing apparatus 2 of the present embodiment, as shown in FIG. 4, the laminated film 30 in which only the second thin film 32 a that is an insulator thin film that is a specific thin film is formed thinner than the others. Can be efficiently manufactured with a relatively small apparatus 2.

  Further, in the case of forming a thin film by a thin film method such as sputtering, for example, as shown in FIG. 6, the discharge limit power decreases as the gas pressure increases. Therefore, according to the laminated film manufacturing apparatus 2 of the present embodiment, the first thin film 32a can be formed at lower power, that is, at a lower deposition rate.

  Furthermore, in this embodiment, as shown in FIG. 1, the partition wall 10 is provided with a flow hole 10a for controlling the flow of gas from the second chamber 8 to the first chamber 6, and flows through the flow hole 10a. The flow rate of the gas to be controlled is controlled by the movement of the valve plate 11 driven by the control device 50. The control device 50 can detect the pressures in the first chamber 6 and the second chamber 8 based on detection signals from the pressure sensors 40 and 42.

  In the present embodiment, the control device 50 controls the movement of the valve plate 11 to control the flow of gas from the second chamber 8 to the first chamber 6, and the difference between the second chamber 8 and the first chamber 6. The pressure (including the pressure ratio) can be controlled automatically. As a result, the thickness t1 (see FIG. 4) of the first thin film 31a formed inside the first chamber 6 and the thickness t2 of the second thin film 32a formed inside the second chamber 8 (see FIG. 4). ) Can be accurately controlled.

  Further, in the present embodiment, in the first chamber 6, the first thin film 31 a shown in FIG. 4 can be formed in a plurality of layers by the plurality of first targets 31 shown in FIG. 1, and then in the second chamber 8. Then, a single-layer second thin film 32a is formed. By configuring in this way, the single-layer second thin film 32a formed in the middle of the laminated film can be formed to be thinner, and the second thin film 32a is composed of a plurality of films sandwiched between the second thin films 32a. The thickness of one thin film 31a can be further increased.

  4 obtained by the manufacturing method using the manufacturing apparatus 2 shown in FIGS. 1 to 3, the first thin film 31a is made of a magnetic material, and the second thin film 32a is made of an insulator. It is. Therefore, this laminated body 30 can be used as a thin film inductor. In the multilayer body 30 obtained by the thin film inductor manufacturing method of the present embodiment, since a thin insulator film is present in the multilayer direction at a predetermined pitch in the multilayer magnetic film, eddy currents in the magnetic core can be prevented. . According to the method of the present embodiment, it is possible to provide a multilayer magnetic core (laminated body 30) that is multilayer and has a high ratio of magnetic layers in the core at high speed and at low cost.

  7 shows the case where the first thin film 31a shown in FIG. 4 is made of a Co—Zr—Ta based magnetic material, the second thin film 32a is made of silicon dioxide, and the number of stacked first thin films 31a is increased. Shows the result of measuring the ratio of the magnetic permeability μ ′ and the magnetic permeability μ ″ of the laminate 30. In order to ensure the characteristics of the thin film inductor in the high frequency region, μ ′ / μ ″ is larger than 15. For this purpose, as shown in FIG. 7, it is preferable to stack the first thin film 31a in five or more layers.

  According to the apparatus 2 and the manufacturing method using the apparatus 2 of the present embodiment, the sputtering table is formed by rotating the turntable 14 and stopping the turntable 14 at the position shown in FIG. It is easy to laminate the thin film 31a into five or more layers.

  The present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention.

  For example, the substrate 12 is not particularly limited, and for example, a silicon wafer, a ferrite substrate, an ALTIC substrate, a barium titanate substrate, a metal substrate, or the like is used.

  Further, the gas flow control mechanism for adjusting the pressure difference (including the pressure ratio) between the first chamber 6 and the second chamber 8 is not limited to the above-described embodiment, and is any mechanism. May be.

  Furthermore, in another embodiment of the present invention, at the initial stage of film formation, sputtering film formation is performed only on the substrate 12 positioned first in the rotation direction A on the rotary table 14 in the chamber 4 shown in FIG. A first first thin film 31a is formed. Thereafter, the rotary table 14 is rotated by 1 / n (n is the total number of substrates 12 along the rotation direction), and sputtering film formation is performed on the two substrates 12 from the beginning in the rotation direction A, and the second from the rotation direction. The first thin film 31a of the second layer is formed on this substrate, and the first thin film 31a of the first layer is formed on the first substrate 12 from the rotation direction. Thereafter, the turntable 14 is further rotated by 1 / n to perform sputtering film formation on the three substrates from the beginning in the rotation direction A.

  Thus, the third first thin film 31a is formed on the third substrate from the rotation direction, and the second first thin film 31a is formed on the second substrate from the rotation direction. A first thin film 31a of the first layer can be formed on the first substrate 12 from the direction. In this way, the first thin film 31a and the second thin film 32a can be formed on all the substrates 12 on the turntable 14 in the same order and with the same thickness.

  In the above-described example, the first thin film 31 a is formed on the substrate 12. However, the second thin film 32 a can be formed first on the substrate 12 located in the second chamber 8. It is.

  Hereinafter, although this invention is demonstrated based on a more detailed Example, this invention is not limited to these Examples.

  FIG. 8 is a graph showing the relationship between the number of first targets and the saturation magnetic flux density Bs of the stacked body 30 in the comparative example and the example. In the embodiment, the apparatus 2 shown in FIG. 1 is used to form the first thin film 31a made of a single or a plurality of Co—Zr—Ta based magnetic films by the method described above, and the silicon dioxide insulator film. A thin film inductor having a multilayer body 30 was obtained by forming a second thin film 32a made of In the comparative example, an inductor was configured in the same manner as in the example except that the partition wall 10 was not provided.

  As shown in FIG. 8, if the total lamination thickness is the same, in this embodiment, even when a single first target 31 is arranged in the first chamber 6 shown in FIG. 1, Bs = 1. A thin film inductor composed of the laminate 30 of 25T or more was obtained. On the other hand, in the comparative example, since there is no partition wall 10 and a pressure difference cannot be created inside the chamber 4, a laminated body having satisfactory Bs is manufactured unless four or more first targets are arranged. I couldn't. This indicates that according to the present embodiment, it is possible to prevent the device 2 from becoming large and expensive.

2 ... laminated film manufacturing apparatus 4 ... chamber 6 ... first chamber 8 ... second chamber 10 ... partition wall 10a ... flow hole (gas flow control mechanism)
10b ... Clearance 11 ... Valve plate (gas flow control mechanism)
12 ... Substrate 14 ... Rotary table (moving mechanism)
20 ... Vacuum pump 22 ... Gas inlet 30 ... Laminated film 31 ... First target (first thin film forming means)
31a ... Magnetic film (first thin film)
32 ... Second target (second thin film forming means)
32a ... Insulator film (second thin film)
40 ... 1st pressure sensor 42 ... 2nd pressure sensor 50 ... Control device

Claims (7)

A chamber capable of sealing the interior;
A partition wall separating the inside of the chamber into a first chamber and a second chamber which can communicate with each other;
A gas inlet provided in the second chamber, the pressure of the second chamber being higher than the pressure of the first chamber;
A moving mechanism for movably holding a substrate between the first chamber and the second chamber inside the chamber;
A first thin film forming means provided in the first chamber for depositing the first thin film on the surface of the substrate;
A laminated film manufacturing apparatus, comprising: a second thin film forming unit provided in the second chamber for depositing a second thin film on the surface of the substrate.   2. The laminated film manufacturing apparatus according to claim 1, wherein the partition wall includes a gas flow control mechanism that controls a gas flow from the second chamber toward the first chamber. A first pressure sensor provided inside the first chamber for detecting the pressure inside the first chamber;
A second pressure sensor provided inside the second chamber for detecting the pressure inside the second chamber;
A control device that receives a detection signal of the first pressure sensor and a detection signal of the second pressure sensor, and controls a differential pressure between the pressure of the second chamber and the pressure of the first chamber within a predetermined range; The apparatus for producing a laminated film according to claim 1, further comprising: A step of making the pressure of the second chamber higher than the pressure of the first chamber in a sealable chamber having a first chamber and a second chamber separated so as to communicate with each other by a partition wall;
The substrate is moved from the first chamber to the second chamber inside the chamber, and a second thin film is deposited on the first thin film formed in the first chamber inside the second chamber. A process of
The substrate is moved from the second chamber to the first chamber inside the chamber, and a first thin film is deposited on the second thin film inside the first chamber separately from the first thin film. A process of
The manufacturing method of the laminated film which has this.   5. The method of manufacturing a laminated film according to claim 4, wherein in the first chamber, the first thin film is formed of a plurality of layers, and thereafter, the single second layer of the second thin film is formed in the second chamber. A step of making the pressure of the second chamber higher than the pressure of the first chamber in a sealable chamber having a first chamber and a second chamber separated so as to communicate with each other by a partition wall;
The substrate is moved from the first chamber to the second chamber inside the chamber, and an insulator film is deposited on the magnetic film formed in the first chamber inside the second chamber. A process of
The substrate is moved from the second chamber to the first chamber inside the chamber, and a magnetic film is deposited on the insulator film in the first chamber separately from the magnetic film. A process of
A method of manufacturing a thin film inductor having   The method of manufacturing a thin film inductor according to claim 6, wherein the magnetic film is formed in a plurality of layers in the first chamber, and then the single-layer insulator film is formed in the second chamber.

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