JP2018107456A - 太陽放射変換装置のためのTm2+発光材料 - Google Patents
太陽放射変換装置のためのTm2+発光材料 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 126
- 230000005855 radiation Effects 0.000 title claims abstract description 79
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 63
- 238000010521 absorption reaction Methods 0.000 claims abstract description 63
- 239000010409 thin film Substances 0.000 claims description 43
- 229910010272 inorganic material Inorganic materials 0.000 claims description 37
- 239000011147 inorganic material Substances 0.000 claims description 37
- 239000000203 mixture Substances 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 25
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 229910052740 iodine Inorganic materials 0.000 claims description 13
- 239000002178 crystalline material Substances 0.000 claims description 12
- 150000008040 ionic compounds Chemical class 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 239000002096 quantum dot Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 4
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 3
- 230000005283 ground state Effects 0.000 claims description 3
- 229910001410 inorganic ion Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000010189 synthetic method Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 31
- 238000000295 emission spectrum Methods 0.000 abstract description 12
- 230000009102 absorption Effects 0.000 description 54
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 52
- 239000011780 sodium chloride Substances 0.000 description 26
- 238000000862 absorption spectrum Methods 0.000 description 16
- 239000000975 dye Substances 0.000 description 16
- 239000003708 ampul Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 8
- 238000000695 excitation spectrum Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 238000005090 crystal field Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- -1 rare earth compounds Chemical class 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 241001289141 Babr Species 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PHPKKGYKGPCPMV-UHFFFAOYSA-N [SeH-]=[Se].[In+3].[SeH-]=[Se].[SeH-]=[Se] Chemical compound [SeH-]=[Se].[In+3].[SeH-]=[Se].[SeH-]=[Se] PHPKKGYKGPCPMV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Inorganic materials [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
【解決手段】UVおよび/または可視および/または赤外の太陽光スペクトルの少なくとも一部の太陽放射を、赤外太陽放射に、好ましくは約1138nmの波長を有する前記赤外太陽放射に変換するためのTm2+無機材料と、前記赤外太陽放射の少なくとも一部を、電力に変換するための光起電力装置とを含む太陽放射変換装置。
【選択図】図9A
Description
・N2で満たされたグローブボックス内で1.425gのCaI2と0.063gのTmI2とを混合し、
・乾燥した石英アンプル内に当該混合物を移し、
・N2で満たされたバルブを用いてグローブボックス内でアンプルを閉じ、
・混合物およびN2ガスが中にあるアンプルを真空ポンプに接続し、
・アンプルを真空排気し、
・真空排気の間、当該混合物が融解するまで(一般的には、1〜2分間)、バーナーでアンプルを加熱する。
・加熱を止め、アンプルを融解することによりアンプルを閉じ、石英が冷却してからアンプルをポンプから外す。
・グローブボックス中で石英を破ることによりアンプルを開け、
・結晶材料の粉末を形成する。
本明細書の開示内容は、以下の態様を含む。
態様1:
UVおよび/または可視および/または赤外の太陽放射の少なくとも一部を、赤外放射に、好ましくは約1138nmの波長を有する前記赤外放射に変換するための発光Tm 2+ 無機材料と、
前記赤外放射の少なくとも一部を、電力に変換するための光起電力装置と
を含む太陽放射変換装置。
態様2:
発光(放出)が、Tm 2+ イオンからであり、好ましくは、0.1〜100%、または好ましくは1%〜50%、または好ましくは1%〜30%、または好ましくは0.2%〜11%の濃度で存在する前記Tm 2+ イオンからである前記発光材料が、2成分、3成分および/または4成分の無機結晶ホスト材料を含む態様1に記載の太陽放射変換装置。
態様3:
前記2成分の無機ホスト材料が、一般式MLで規定され、ここで、M=Na、K、Rb、Csで、L=Cl、Br、I、Fであり、または一般式NL 2 で規定され、ここで、N=Mg、Ca、Sr、Baで、L=Cl、Br、I、Fであり、好ましくは一般式NI 2 で規定され、ここで、N=Mg、Ca、Sr、Baで、L=Cl、Br、I、Fであり、または一般式MNL 3 で規定される無機ホスト材料で規定され、
または前記無機ホスト材料が、M、Nおよび/若しくはLの合金若しくは混合物である、態様1または2に記載の太陽放射変換装置。
態様4:
前記発光Tm 2+ ドープ無機材料が、(多)結晶薄膜層または結晶粒子、好ましくはナノスケール粒子を含み、前記粒子がマトリクス材料に埋め込まれている態様1〜3のいずれかに記載の太陽放射変換装置。
態様5:
前記発光Tm 2+ 系無機材料が、所定の波長の前記太陽放射を前記光起電力装置に導くための導波路構造の一部である、または当該導波路構造と関連する態様1〜4のいずれかに記載の太陽放射変換装置。
態様6:
前記導波路構造が、第1(上部)の表面と第2(底部)の表面とを含み、発光Tm 2+ 層が、前記第1および/または第2の表面の少なくとも一部に亘って設けられており、好ましくは前記層が、(多)結晶薄膜層、または結晶(ナノスケール)粒子が組み込まれたマトリクス材料の層を含む態様5に記載の太陽放射変換装置。
態様7:
前記導波路構造が、第1(上部)の表面と第2(底部)の表面とを含み、前記発光Tm 2+ 材料が、前記導波路構造に埋め込まれている態様5に記載の太陽放射変換装置。
態様8:
前記マトリクス材料が、透明有機ポリマー、好ましくはポリメチルメタクリレート(PMMA)またはポリカーボネートである態様1〜7のいずれかに記載の太陽放射変換装置。
態様9:
前記発光Tm 2+ 無機材料を含む波長変換層が、前記光起電力装置の受光面に亘って設けられている態様1〜4のいずれかに記載の太陽放射変換装置。
態様10:
光起電力装置が前記発光Tm 2+ 無機材料を含み、好ましくは前記光起電力装置が前記発光Tm 2+ 無機材料を含む薄膜層を含んでいる態様1〜4のいずれかに記載の太陽放射変換装置。
態様11:
前記光起電力装置が、赤外吸収活性層を含み、より好ましくは、タイプIV、III−V若しくはII−VI半導体化合物、銅インジウムガリウムジセレニド(CIGS)、銅インジウムジセレニド(CIS)、赤外吸収量子ドット、赤外吸収ポリマー、グラフェンまたはカーボンナノチューブの少なくとも1つを含む前記赤外吸収層を含む態様1〜10のいずれかに記載の太陽放射変換装置。
態様12:
Tm 2+ 系発光材料において、太陽放射の吸収が、Tm 2+ の5d配置(5d状態)で起こり、一方、放出(発光)が、Tm 2+ の4f 13 (2F 5/2 )からTm 2+ の4f 13 (2F 7/2 )基底状態までである態様1〜11のいずれかに記載の太陽放射変換装置。
態様13:
発光太陽エネルギー集光器または太陽電池セルにおける発光Tm 2+ 無機結晶材料の使用。
態様14:
Tm 2+ がドープされた第1の無機イオン化合物を形成するために、Tm 2+ またはTm 3+ カチオンを含む第2の無機イオン化合物と共に、ある量の少なくとも第1の無機イオン化合物を溶解する工程と、
前記溶解の間、5×10 −4 mbarより低い、好ましくは1×10 −4 mbarより低い圧力を維持する工程と
を含む発光Tm 2+ ドープ無機結晶材料の合成方法。
態様15:
第1のスパッタリングターゲットに、第1の無機イオン化合物を含む第1のスパッタリング材料を提供し、第2のスパッタリングターゲットにツリウムである第2のスパッタリング材料を提供する工程と、
スパッタリングチャンバ内にガスを導入する工程と、
前記基材を、10〜700℃、好ましくは10〜600℃の温度に加熱する工程と、
Tm 2+ カチオンでドープされた前記第1の無機イオン化合物の(多)結晶薄膜を成長させるために、RF電位を前記第1のスパッタリングターゲットに付加し、DC電位を前記第2のスパッタリングターゲットに付加し、それにより前記第1および前記第2のターゲットから前記基材上に前記第1および前記第2の材料のスパッタリングを引き起こす工程と
を含む、真空チャンバ内に取り付けられた基材上への、発光Tm 2+ ドープ無機多結晶薄膜の形成方法。
Claims (15)
- UVおよび/または可視および/または赤外の太陽放射の少なくとも一部を、赤外放射に、好ましくは約1138nmの波長を有する前記赤外放射に変換するための発光Tm2+無機材料と、
前記赤外放射の少なくとも一部を、電力に変換するための光起電力装置と
を含む太陽放射変換装置。 - 発光(放出)が、Tm2+イオンからであり、好ましくは、0.1〜100%、または好ましくは1%〜50%、または好ましくは1%〜30%、または好ましくは0.2%〜11%の濃度で存在する前記Tm2+イオンからである前記発光材料が、2成分、3成分および/または4成分の無機結晶ホスト材料を含む請求項1に記載の太陽放射変換装置。
- 前記2成分の無機ホスト材料が、一般式MLで規定され、ここで、M=Na、K、Rb、Csで、L=Cl、Br、I、Fであり、または一般式NL2で規定され、ここで、N=Mg、Ca、Sr、Baで、L=Cl、Br、I、Fであり、好ましくは一般式NI2で規定され、ここで、N=Mg、Ca、Sr、Baで、L=Cl、Br、I、Fであり、または一般式MNL3で規定される無機ホスト材料で規定され、
または前記無機ホスト材料が、M、Nおよび/若しくはLの合金若しくは混合物である、請求項1または2に記載の太陽放射変換装置。 - 前記発光Tm2+ドープ無機材料が、(多)結晶薄膜層または結晶粒子、好ましくはナノスケール粒子を含み、前記粒子がマトリクス材料に埋め込まれている請求項1〜3のいずれか1項に記載の太陽放射変換装置。
- 前記発光Tm2+系無機材料が、所定の波長の前記太陽放射を前記光起電力装置に導くための導波路構造の一部である、または当該導波路構造と関連する請求項1〜4のいずれか1項に記載の太陽放射変換装置。
- 前記導波路構造が、第1(上部)の表面と第2(底部)の表面とを含み、発光Tm2+層が、前記第1および/または第2の表面の少なくとも一部に亘って設けられており、好ましくは前記層が、(多)結晶薄膜層、または結晶(ナノスケール)粒子が組み込まれたマトリクス材料の層を含む請求項5に記載の太陽放射変換装置。
- 前記導波路構造が、第1(上部)の表面と第2(底部)の表面とを含み、前記発光Tm2+材料が、前記導波路構造に埋め込まれている請求項5に記載の太陽放射変換装置。
- 前記マトリクス材料が、透明有機ポリマー、好ましくはポリメチルメタクリレート(PMMA)またはポリカーボネートである請求項1〜7のいずれか1項に記載の太陽放射変換装置。
- 前記発光Tm2+無機材料を含む波長変換層が、前記光起電力装置の受光面に亘って設けられている請求項1〜4のいずれか1項に記載の太陽放射変換装置。
- 光起電力装置が前記発光Tm2+無機材料を含み、好ましくは前記光起電力装置が前記発光Tm2+無機材料を含む薄膜層を含んでいる請求項1〜4のいずれか1項に記載の太陽放射変換装置。
- 前記光起電力装置が、赤外吸収活性層を含み、より好ましくは、タイプIV、III−V若しくはII−VI半導体化合物、銅インジウムガリウムジセレニド(CIGS)、銅インジウムジセレニド(CIS)、赤外吸収量子ドット、赤外吸収ポリマー、グラフェンまたはカーボンナノチューブの少なくとも1つを含む前記赤外吸収層を含む請求項1〜10のいずれか1項に記載の太陽放射変換装置。
- Tm2+系発光材料において、太陽放射の吸収が、Tm2+の5d配置(5d状態)で起こり、一方、放出(発光)が、Tm2+の4f13(2F5/2)からTm2+の4f13(2F7/2)基底状態までである請求項1〜11のいずれか1項に記載の太陽放射変換装置。
- 発光太陽エネルギー集光器または太陽電池セルにおける発光Tm2+無機結晶材料の使用。
- Tm2+がドープされた第1の無機イオン化合物を形成するために、Tm2+またはTm3+カチオンを含む第2の無機イオン化合物と共に、ある量の少なくとも第1の無機イオン化合物を溶解する工程と、
前記溶解の間、5×10−4mbarより低い、好ましくは1×10−4mbarより低い圧力を維持する工程と
を含む発光Tm2+ドープ無機結晶材料の合成方法。 - 第1のスパッタリングターゲットに、第1の無機イオン化合物を含む第1のスパッタリング材料を提供し、第2のスパッタリングターゲットにツリウムである第2のスパッタリング材料を提供する工程と、
スパッタリングチャンバ内にガスを導入する工程と、
前記基材を、10〜700℃、好ましくは10〜600℃の温度に加熱する工程と、
Tm2+カチオンでドープされた前記第1の無機イオン化合物の(多)結晶薄膜を成長させるために、RF電位を前記第1のスパッタリングターゲットに付加し、DC電位を前記第2のスパッタリングターゲットに付加し、それにより前記第1および前記第2のターゲットから前記基材上に前記第1および前記第2の材料のスパッタリングを引き起こす工程と
を含む、真空チャンバ内に取り付けられた基材上への、発光Tm2+ドープ無機多結晶薄膜の形成方法。
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