JP2018107321A5 - - Google Patents

Claims (12)

On the first substrate, forming a semiconductor layer contact and the first metal layer including a light-emitting layer in this order,
Forming a second metal layer on the second substrate;
Bonding the first substrate and the second substrate by bonding the first metal layer and the second metal layer to each other;
Removing the first substrate after the bonding;
Forming a surface electrode selectively on the surface of the semiconductor layer after removing the first substrate;
After the formation of the surface electrode, the step of thinning the second substrate from the back side;
After the thinning step, a step of attaching a support substrate to the surface side of the semiconductor layer;
Forming a back electrode on the back surface of the second substrate in a state where the semiconductor layer is supported by the support substrate;
Forming a fine concavo-convex structure on the surface of the semiconductor layer by removing the support substrate and subjecting the surface of the semiconductor layer to a frost treatment.   2. The semiconductor light emitting device according to claim 1, wherein the second substrate has a thickness of 300 μm to 600 μm before the thinning step, and is processed to a thickness of 35 μm to 80 μm by the thinning step. Device manufacturing method.   3. The method of manufacturing a semiconductor light emitting device according to claim 1, further comprising a step of performing a continuity test of the surface electrode by bringing a probe into contact with the surface electrode after the formation of the surface electrode and before the thinning step. 4. Method.   The said frost process is a manufacturing method of the semiconductor light-emitting device as described in any one of Claims 1-3 including the process of carrying out the wet etching of the surface of the said semiconductor layer.   The step of forming the semiconductor layer and the first metal layer on the first substrate includes a step of forming a translucent conductive layer between the semiconductor layer and the first metal layer. The manufacturing method of the semiconductor light-emitting device as described in any one of these. A substrate having a thickness of 35 μm to 80 μm;
A metal layer on the substrate,
Formed prior Symbol metal layer, light emitting layer, a first conductivity type layer disposed on the substrate side with respect to the light emitting layer, and a second conductive disposed on the opposite side of the substrate to the light-emitting layer A semiconductor layer including a mold layer;
A surface electrode selectively formed on the surface of the semiconductor layer;
A back electrode formed on the back surface of the substrate;
A semiconductor light emitting device including a fine concavo-convex structure selectively formed on a surface of the semiconductor layer. The semiconductor light emitting device according to claim 6 , wherein a total thickness of the substrate and the semiconductor layer is 250 μm to 600 μm. A translucent conductive layer between the metal layer and the semiconductor layer;
8. The semiconductor light emitting device according to claim 6 , wherein an optical film thickness of the translucent conductive layer is 0.125λ to 0.5λ (where emission wavelength λ = 750 nm to 1000 nm). The second conductivity type layer includes a second conductivity type cladding layer, a second conductivity type window layer, and a second conductivity type contact layer, which are sequentially stacked on the light emitting layer,
The second conductivity type window layer has an exposed surface selectively exposed from the second conductivity type contact layer;
The fine concavo-convex structure is formed on the exposed surface of the second conductivity type window layer,
The semiconductor light-emitting device according to claim 6 , wherein the second conductivity type window layer has a thickness of 2 μm to 6 μm. The semiconductor light emitting device according to any one of claims 6 to 9 , wherein the metal layer has a thickness of 4000 to 10,000 mm. The semiconductor light emitting device according to claim 6 , wherein the metal layer includes Au. The semiconductor light-emitting device according to claim 6 , wherein the substrate includes a silicon substrate.