JP2018087699A - Silicon penetration via formation production management system, silicon penetration via production management method, recording medium, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a system and a method of a silicon penetration via production management, a recording medium, and a program capable of performing a non-destructive inspection of a TSV.SOLUTION: A silicon penetration via formation production management system includes: a X ray inspection device 10 for obtaining an image showing a shape of a silicon penetration via formed on a silicon substrate and a state of the plating film inside the silicon penetration via; a void defect classification part 21 for determining the presence or absence of a void defect inside the plating film from the obtained image and classifying the void defect into a predetermined plurality of detect patterns when the void defect is detected; a defect processing specifying part 22 for specifying defect processing which is a cause of the void defect according to the classified predetermined defect pattern; and a control part 23 for instructing a processing device which performs change processing for correcting the defect processing and performs the defect processing.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a through silicon via formation production management system, a through silicon via formation production management method, a recording medium, and a program.

  Conventionally, three-dimensional high integration technology (3DI, Three Dimensional Integration, hereinafter referred to as “TSV”) in which LSI chips are stacked and upper and lower devices are connected by through silicon vias (hereinafter referred to as “TSV”). "3DI technology") is known. In such 3DI technology, it is being recognized that inspecting the formation process of CuTSV or the like with a metal film formed in the previous process is important for increasing the yield rate in the subsequent process.

  However, in the conventional 3DI technology, there is no method for detecting defects in TSVs in a non-destructive manner in-line.

  On the other hand, there is a CT (Computed Tomography) technique as a technique for handling a transmission image as a three-dimensional image, but the CT technique requires an imaging mechanism that rotates a wafer to be measured 360 degrees. The increase in the size of the imaging mechanism increases the cost of the inspection apparatus, and further requires a large computer capacity and work time to construct a stereoscopic image. Typically, about 900 transmitted images per inspection object. And it takes about 16 hours to reconstruct a 3D image, so that it is difficult to introduce it into an in-line inspection.

  In addition, X-ray laminography is an improved method of CT technology, but this method does not provide elaborate 3D information like CT technology and can only be used for simple inspection and measurement of specific parts. It is not suitable for in-line inspection of TSV and CuTSV.

  On the other hand, X-ray inspection is also known as a technique for performing non-destructive inspection, and in semiconductor device inspection, it was sometimes used for inspection in the post-process, but in general in the manufacturing line inspection in the pre-process. It was not right. In the process of manufacturing CuTSV or the like in the previous process, the size of the inspection object is about several μm to 10 μmφ, and the conventional X-ray apparatus can cope with an area where reproducibility of about 1% of the size is required. There was no device available.

  As an X-ray non-destructive inspection apparatus that can be used for a part of semiconductor device inspection, an X-ray non-destructive inspection apparatus that can inspect the thickness of only an inspection target member in a non-destructive state is known (for example, , See Patent Document 1). In the X-ray nondestructive inspection apparatus described in Patent Document 1, two points of X-ray transmission dose determined based on design information are detected, and the thickness dimension of the measurement object is calculated from the detected X-ray dose. To do. According to the X-ray nondestructive inspection apparatus described in Patent Document 1, the depth dimension of the trench, the thickness of the circuit layer inside the insulating layer of the film substrate, the thickness of the electrode layer inside the insulating film, etc. are nondestructive. It becomes possible to measure.

JP2013-130392A

  In the configuration described in Patent Document 1 described above, since the method of introduction into the in-line inspection of the semiconductor device production line is not taken into consideration, it is difficult to introduce the semiconductor device production line as an in-line inspection device. In addition, since the inspection target is limited to the thickness, it cannot be applied as it is to the inspection of TSV or CuTSV.

  Therefore, an object of the present invention is to provide a through-silicon via formation production management system, a through-silicon via formation production management method, a recording medium, and a program capable of performing non-destructive inspection of TSVs in-line.

In order to achieve the above object, the through silicon via formation production management system according to one aspect of the present invention acquires an image showing the shape of the through silicon via formed in the silicon substrate and the state of the plating film in the through silicon via. An X-ray inspection device,
Determining the presence or absence of void defects in the plating film from the acquired image, when detecting the void defects, defect pattern determination means for classifying the void defects into a predetermined defect pattern;
In accordance with the classified predetermined defect pattern, a defect processing specifying means for specifying a defect process that causes the void defect;
Control means for instructing a processing apparatus performing the defect processing to perform a change process for correcting the defect processing.

In the through silicon via formation production management method according to another aspect of the present invention, an image showing the shape of the through silicon via formed in the silicon substrate and the state of the plating film in the through silicon via is obtained by X-ray inspection, A defect detection step of detecting void defects in the plating film from the acquired image;
A defect pattern determination step for classifying the detected void defect into a predetermined defect pattern;
In accordance with the classified predetermined defect pattern, a defect process specifying step for specifying a defect process that causes the void defect;
A control process for instructing a processing apparatus performing the defect processing to perform a change process for correcting the defect processing.

A computer-readable recording medium in which a through silicon via formation production management program according to another aspect of the present invention is recorded includes a shape of a through silicon via formed in a silicon substrate obtained by an X-ray inspection, and the inside of the through silicon via. Using the image showing the state of the plating film,
Defect detection means for detecting void defects in the plating film from the acquired image,
A defect pattern judging means for classifying the detected void defect into a predetermined defect pattern;
According to the classified predetermined defect pattern, the defect process causing the defect is identified, and a change process for correcting the defect process is instructed to the processing apparatus performing the defect process. It functions as a control means.

The through-silicon via formation production management program according to another aspect of the present invention uses an image showing the shape of the through-silicon via formed in the silicon substrate and the state of the plating film in the through-silicon via obtained by X-ray inspection. Computer
Defect detection means for detecting void defects in the plating film from the acquired image,
A defect pattern judging means for classifying the detected defect into a predetermined defect pattern;
According to the classified predetermined defect pattern, the defect process causing the defect is identified, and a change process for correcting the defect process is instructed to the processing apparatus performing the defect process. It functions as a control means.

  According to the present invention, it is possible to reflect a process for inspecting a defect related to a through-silicon via in a nondestructive manner and correcting the defect in a manufacturing process in operation without delaying the process.

It is the figure which showed the system configuration | structure of an example of the through silicon via formation production management system which concerns on embodiment of this invention. It is the figure which showed an example of the imaging method of the imaging part of the X-ray inspection apparatus of the TSV formation production management system which concerns on embodiment of this invention. It is a figure for demonstrating in detail the significance which acquires a top image. FIG. 3A is a diagram illustrating an example of a relative position between the X-ray source and the camera. FIG. 3B is a diagram showing an example of a top image of TSV on which a plating film containing voids is formed. It is a figure for demonstrating acquisition of the positional information on the void defect which generate | occur | produced in the plating film. It is a figure for demonstrating in detail the significance which acquires an inclination image. FIG. 5A is a diagram illustrating an example of the relative positions of the X-ray source, the silicon substrate, and the camera when acquiring the tilt image. FIG. 5B is a diagram showing an example of the relationship between the camera position and the obtained tilted image. This is a model for obtaining an X-ray transmission image in the vertical direction when X-rays advance parallel to the inclination angle θ. It is a figure for demonstrating an example of the extraction method of TSV. FIG. 7A is a diagram showing a state where an arbitrary TSV is selected from the X-ray transmission image. FIG. 7B is a diagram illustrating an example of a TSV from which a contour is extracted. FIG. 7C is a diagram illustrating a state in which only the TSV that is the ROI is cut out and extracted from the contour portion. FIG. 7D is a diagram illustrating an image obtained by performing binarization processing on the cut-out TSV. It is a figure for demonstrating correlation with a X-ray transmittance and a line profile. It is the 1st figure showing the example of the defect pattern generated depending on Cu embedding process. It is the 2nd figure showing the example of the void pattern generated depending on Cu embedding process. It is the figure which showed an example of the X-ray transmissive amount characteristic in case a void defect does not exist in a plating film. It is the figure which showed the X-ray transmissive amount characteristic of two defect patterns. FIG. 12A is a diagram showing the X-ray transmission amount characteristic A of the bottomless pattern of type A in FIG. FIG. 12B is a diagram showing an X-ray transmission amount characteristic E of the type E trunk cut-off pattern of FIG. It is the figure which showed an example of the X-ray transmission amount characteristic I in the defect pattern of Type I. It is the figure which showed an example of the X-ray transmissive amount characteristic A of the bottomless pattern of type A. It is the figure which showed an example of the X-ray transmissive amount characteristic B of the bubble pattern in TSV of type B. It is the figure which showed an example of the X-ray transmissive amount characteristic C of the vertically long bubble pattern in TSV of type C. It is the figure which showed an example of the X-ray transmissive amount characteristic D of the wall surface bubble pattern of type D. It is the figure which showed an example of the X-ray transmissive amount characteristic E of the type-C body cut-out pattern. It is the figure which showed an example of the X-ray transmission characteristic F of the bottom corner missing pattern of type F of FIG. It is the figure which showed an example of the X-ray transmissive amount characteristic G of the type G donut omission pattern. It is the figure which showed an example of the X-ray transmissive amount characteristic H of the type H tear-drop pattern. It is the figure which showed an example of the X-ray transmission amount characteristic I of the bullet pattern of type I. It is the figure which showed an example which carried out the pseudo three-dimensional model of the void defect by the 3 direction transmission image, and extracted the void defect. It is the figure which showed the application example of the void defect extraction by a 3 direction transmission image. It is the figure which enumerated nine defect patterns shown in FIG.9 and FIG.10. It is the figure which showed the 1st process example of the classification recognition by a feature-value. FIG. 26A shows an image before processing. FIG. 26B shows an image after processing. (Outline extraction) It is the figure which showed the 2nd process example of classification recognition by the feature-value. FIG. 27A shows an image before processing. FIG. 27B shows an image after processing. (Void defect contour extraction) It is the figure which showed the example of recognition for classification. It is the figure which showed the example which performed the edge emphasis process with respect to the X-ray transmissive image of TSV and a void defect. It is the figure which showed an example of the whole scheme of the method of estimating the volume of a void using MBL method. It is the figure which showed an example of the processing flow of the volume estimation of a void defect. It is the figure which showed an example of the model which simplified the void. FIG. 32A is a diagram showing an example of a void and TSV to be modeled. FIG. 32B is a diagram illustrating an example of a void volume modeling method. It is a figure for demonstrating the mechanism of the void defect pattern classification | category of MBL method. It is the figure which showed an example of the series of processes for TSV formation. It is the figure which showed an example of the high quality management production system by a test | inspection, feedback, and feedforward. It is the figure which classified and showed what kind of phenomenon appears according to the result in the plating process in a series of processes of TSV formation. It is a figure for demonstrating an example of the feedback / feedforward control method with respect to the opening part shape of a barrier / seed layer. FIG. 37A is a cross-sectional view of an example of the barrier / seed layer. FIG. 37B is a top view of an example of a barrier / seed layer having a wide opening. FIG. 37C is a top view of an example of a barrier / seed layer having a narrow opening. FIG. 37 (d) is a diagram showing an example of the defect processing specifying process. It is a figure for demonstrating the defect process specific process in case the void by overhang has generate | occur | produced. It is a figure for demonstrating an example of the defect process specific process when the void resulting from a plating process generate | occur | produces. It is a figure for demonstrating an example of the defect process specific process when a void generate | occur | produces in a side wall surface. It is a figure for demonstrating the process for specifying the defect process which induces in-plane variation. It is a figure for demonstrating the process for determining an overplate defect. It is the figure which showed an example of the processing flow of the TSV formation production management method which concerns on embodiment of this invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram showing a system configuration of an example of a through silicon via formation production management system (hereinafter referred to as “TSV formation production management system”) according to an embodiment of the present invention. As shown in FIG. 1, the TSV formation production management system according to the embodiment of the present invention includes an X-ray inspection apparatus 10 and a TSV formation production management apparatus 20. The TSV formation production management system includes a processing device 40 as a related component. Further, a recording medium 30 may be provided as necessary. The processing device 40 is provided with a processing device that is required and used in the TSV manufacturing process. The processing apparatus 40 includes, for example, an etching apparatus 41 used in a via formation process for forming a TSV on a substrate, and a barrier / seed layer formation apparatus 42 used in a barrier / seed formation process for forming a barrier layer / seed layer on the surface of the TSV. , A plating apparatus 43 that performs metal plating such as copper plating on the TSV, and a CMP (Chemical Mechanical Polishing) apparatus 44 that planarizes the plating film.

  The X-ray inspection apparatus 10 is an apparatus for nondestructively inspecting defects related to TSVs formed on a silicon substrate using X-rays. More specifically, the X-ray inspection apparatus 10 performs an X-ray transmission inspection of the TSV and its peripheral processes, and forms the TSV and the size of defects generated in the barrier layer / seed layer process or plating process formed on the TSV. And the image containing position information is acquired and the defect information which generate | occur | produced in each process is acquired.

  The X-ray inspection apparatus 10 may be provided as an in-line inspection apparatus, and may be provided between processes that require inspection in the production line so that the silicon substrate can be inspected when the silicon substrate moves between processes. Good. In the example of FIG. 1, one X-ray inspection apparatus 11 is provided between the barrier / seed layer forming apparatus 42 and the plating apparatus 43, and one X-ray inspection apparatus is provided between the plating apparatus 43 and the CMP apparatus 44. 12 is provided. In the following description, when the two X-ray inspection apparatuses 11 and 12 are individually indicated, they are expressed as the X-ray inspection apparatuses 11 and 12, but apply to both of the two X-ray inspection apparatuses 11 and 12. When there is no need to perform the above, it is expressed as an X-ray inspection apparatus 10. The X-ray inspection apparatuses 11 and 12 may be shared by the same apparatus.

  The X-ray inspection apparatus 10 includes an imaging unit 13 and an inspection / measurement unit 16. The imaging unit 13 has an X-ray source and a camera and plays a role of acquiring an X-ray transmission image to be inspected. A specific configuration of the imaging unit 13 will be described later. The inspection / measurement unit 16 performs necessary image processing on the X-ray transmission image captured by the image capturing unit 13 and measures and calculates the shape, position, necessary parameters, and the like. Therefore, the inspection / measurement unit 16 is configured as an arithmetic processing unit capable of performing image processing and arithmetic processing. For example, an ASIC (Application Specific Integrated Circuit) that is an integrated circuit designed and manufactured for a specific application. Alternatively, it may be configured as a CPU (Central Processing Unit) that operates by reading a program.

  The X-ray inspection apparatus 10 may be provided as a dedicated inspection apparatus, or may be configured as an inspection module incorporated in the apparatus. As long as the above-described imaging unit 13 and inspection / measurement unit 16 are substantially provided, the mode thereof is not limited. Further, the function of the inspection / measurement unit 16 may be realized by a part of another arithmetic processing device, for example, the TSV formation production management device 20, and it is sufficient that the imaging unit 13 is provided at a minimum.

  Since the X-ray inspection apparatus 11 provided between the barrier / seed layer forming apparatus 42 and the plating apparatus 43 inspects the shapes of the TSV and the barrier / seed layer, the imaging unit 13 is configured as a shape imaging unit 131. The inspection / measurement unit 16 is configured as a shape inspection unit 161. In addition, since the X-ray inspection apparatus 12 provided between the plating apparatus 43 and the CMP apparatus 44 is subject to void defects generated in the plating film and excess film thickness of the plating film, the imaging unit 13 The void defect imaging unit 132 is configured, and the inspection / measurement unit 16 includes a void defect measurement unit 162 and a Cu laminated film thickness measurement unit 163. However, even if the inspection objects of the X-ray inspection apparatuses 11 and 12 are different, only the processing object of the inspection / measurement unit 16 is different, and both use the X-ray inspection apparatus 10 having the same structure and function. Can do.

  The TSV formation production management device 20 is a device for overall and comprehensive management of the production line in the TSV formation process. The TSV formation production management apparatus 20 is configured as an arithmetic processing means in order to perform various arithmetic processes related to TSV formation production management. For example, the TSV formation production management device 20 is an ASIC (Application Specific Integrated Circuit) that is an integrated circuit designed and manufactured for a specific application, or a CPU (Central Processing Unit) that operates by reading a program. It may be configured as. Further, the TSV formation production management device 20 may include various storage means such as a ROM (Read Only Memory) and a RAM (Random Access Memory) as necessary. In FIG. 1, the storage unit 24 is shown as an internal component as an example of the storage unit. The TSV formation production management device 20 may be configured as a computer as a whole.

  The TSV formation production management device 20 includes a void defect classification unit 21, a defect processing identification unit 22, a control unit 23, and a storage unit 24 as functional block components.

  The void defect classification unit 21 is a defect pattern determination unit for classifying the void defect acquired by the X-ray inspection apparatus 12 into a predetermined defect pattern. Specific classification contents and classification methods will be described later.

  The defect processing specifying unit 22 is a means for specifying a defect process that causes a void defect that has occurred according to the predetermined defect pattern classified by the void defect classifying unit 21. The defect processing specifying unit 22 uses classified defect pattern data, through-silicon via spec (specification) data, characteristic data indicating a correlation between processing and void defects, and the like as necessary. The void defect detected from the image acquired by the X-ray inspection apparatus 12 is collated, and the defect process that causes the detected void defect is specified. Note that the identification of the defective process is not necessarily limited to one, and may be identification of a plurality of processes that may cause the defect. In FIG. 1, defect processing specifying units 222 to 224 are provided on the downstream side of the void defect classification unit 21. The void defect classification unit 21 classifies the void defect, and determines that it corresponds to any of the overhang void, the void in the via, and the void on the side wall, and classifies the detected void defect. When it is determined as an overhang void, the defect processing specifying unit 222 compares the via specification 241, the opening shape measurement value data 242 and the defect pattern data 243 with the detected void defect, A deviation amount is obtained, and a control module and / or a processing step (defect processing) that causes the deviation amount is specified. In FIG. 1, an example specified for two failure processes is shown. The “defect” referred to here is not limited to a large defect, but includes a deviation amount to the extent that adjustment is made with respect to via specifications.

  Similarly, when the void defect classification unit 21 determines that the defect pattern is a void in the via, the defect processing specifying unit 223 detects the void defect detected by the X-ray detection apparatus 12 as the via spec 241 and the via. Compared with the defect pattern data 244 of the voids inside and the stirring speed characteristic 245, the deviation amount from the via spec is obtained, and the defect processing that causes the deviation amount is specified. In FIG. 1, an example specified for two failure processes is shown.

  Similarly, when the void defect classification unit 21 determines that the defect pattern is a void on the side wall surface, the defect processing specifying unit 224 identifies the void defect detected by the X-ray detection device 12 as the via spec 241 and the via. Compared with the defect pattern data 246 of the voids inside and the stirring speed characteristic 245, the amount of deviation from the via specification is obtained, and the defective process causing the amount of deviation is specified. In FIG. 1, an example specified for four defect processes is shown.

  As described above, the defect processing specifying unit 22 uses various data as necessary according to the predetermined defect pattern classified by the void defect classifying unit 21, and performs defect processing that causes the generated void defect ( Identify the control module and / or processing step that causes the deviation from the via spec. In FIG. 1, defect processing specifying units 222 to 224 are provided for each classified defect pattern and are individually processed. However, one defect processing specifying unit 22 corresponds to a predetermined defect pattern. Then, various kinds of data necessary for specifying the defect may be called and the defect specifying process corresponding to the defect pattern may be performed. Moreover, the defect pattern shown in FIG. 1 is only an example, and the number and content of the defect patterns can be variously set according to the application. Further, the identification of the defect processing may include not only items but also specific qualitative contents and quantitative contents. The specific details of such defect processing related to the actual process will be described later.

  The defect processing specifying unit 22 further includes a defect processing specifying unit 221 having in-plane uniformity on the downstream side of the void defect classifying unit 21. In-plane uniformity requires comparison of TSV data at a plurality of locations within the surface of the silicon substrate, and therefore, defect processing is specified using a plurality of measurement pattern data 247 in addition to the via specifications 241. Since the defective process is an uneven process in the plane rather than the content of the process, the data specified to indicate the process imbalance in the plane is specified as the defective process.

  The TSV formation production management system is a processing unit similar to the defect processing specifying unit 22 that does not exist on the downstream side of the void defect classifying unit 21, and includes a defect processing specifying unit 225 for opening shape inspection, and a defect processing for overplate film thickness calculation. You may provide the specific part 226 as needed. After forming the TSV, the defect shape specifying unit 225 for opening shape inspection specifies the defect processing in the shape inspection of the TSV in which the barrier / seed layer is formed in the TSV but the plating film is not formed. The content of the defect processing is a defect in the opening shape of the TSV, and the item itself is determined, but the defect processing specifying unit 225 is used to compare the via spec 241 and the pass / fail determination data 248 with the detected defect.

  Similarly, no void defect was detected in the TSV, but when the plating film thickness was too large and an overplating defect was detected, the detected plating film thickness was compared with the via specification 241; For example, it may be used for feedback to the plating process and feedback to the CMP process.

  As described above, the defect processing specifying unit 22 can be applied not only to the void defect in the plating film but also to the identification of the defect processing in various defects. If necessary, the defect processing specifying unit 22 may be used to specify such various defect processes.

  The control unit 23 plays a role of instructing the processing device 40 that is performing the failure process to perform a change process for correcting the failure process. The control unit 23 may issue an instruction to change a specific processing condition of the processing performed by the processing device 40. In this case, the control unit 23 calculates a parameter of the processing condition and instructs the processing device 40 to change the calculated parameter. Take control. In FIG. 1, a shape parameter calculation unit 231 and a film-attached parameter calculation unit 232 are shown. However, the shape parameter calculation unit 231 can be used when the etching process (via formation process) performed by the etching apparatus 41 is defective. A parameter for determining the shape is changed, a shape parameter is calculated so that the via has an appropriate shape, and a change to the calculated parameter is instructed. Further, when the failure processing specifying unit 22 determines that there is a defect in the formation of the seed layer, the parameter calculation unit 232 with a film calculates an appropriate parameter with the film of the seed layer, The change is instructed to the barrier / seed layer forming apparatus 42.

  Further, the stirring speed condition determining unit 233 determines an appropriate stirring speed condition when the defect processing specifying unit 22 determines that adjustment of the stirring speed of the plating solution is necessary. Similarly, the plating solution condition determining unit 234 determines an appropriate plating solution condition when the defect processing specifying unit 22 determines that adjustment of the plating solution condition is necessary. The plating current density condition determining unit determines an appropriate plating current density condition when the defect processing specifying unit 22 determines that adjustment of the plating current density is necessary.

  The conditions calculated by the stirring speed condition determining unit 233, the plating solution condition determining unit 234, and the plating current density condition determining unit 235 are sent to the plating condition parameter calculating unit 236. The plating condition parameter calculation unit calculates and sets appropriate plating condition parameters based on the conditions received from the stirring speed condition determination unit 233, the plating solution condition determination unit 234, and the plating current density condition determination unit 235. As long as the received conditions are independent, the plating condition parameter may be a parameter obtained by adding them for each item as they are, or may be a parameter that has been modified in consideration of the mutual influences. . The calculated plating condition parameter is sent to the plating apparatus 43, and the plating apparatus 43 changes the plating condition in accordance with the instructed plating condition parameter.

  In this way, the control unit 23 calculates specific processing conditions and instructs each processing device 40 to perform change processing. At that time, as described above, specific parameters may be calculated and an instruction including them may be given.

  The overplate control unit 237 instructs the CMP apparatus 44 to perform a planarization process corresponding to the overplate. This is not a process to correct the overplating of the plating process, but if an overplate occurs, it is necessary to remove the excess plating film in the CMP process, so a flattening process corresponding to such an overplate is instructed. To do.

  In this way, the control unit 23 specifically instructs the processing contents so that each processing device 40 can perform processing that falls within the management range, and performs control so that high-quality TSV formation can be performed.

  The storage unit 24 is a storage unit for storing data necessary for various processes performed by the TSV formation production management apparatus 20 in addition to a program for executing the process and a recipe describing the process conditions. In FIG. 1, the storage unit 24 is comprehensively shown as one, but data having different properties such as a program, a recipe, and data used for processing may be stored in a plurality of storage units as necessary. . Therefore, the storage unit 24 may include a plurality of storage units.

  The recording medium 30 is a medium capable of recording programs, recipes, data necessary for processing performed by the TSV formation production management apparatus 20, and various media such as CD and HDD can be used. Moreover, it is good also as a structure which can install a program and data required for a memory | storage part from a network irrespective of a recording medium.

  As described above, the processing apparatus 40 shows the etching apparatus 41, the barrier / seed layer forming apparatus 42, the plating apparatus 43, and the CMP apparatus 44 as the processing apparatus 40 related to TSV formation. The processing apparatus 40 is not restricted to these, You may provide the other processing apparatus 40 according to a use. The barrier / seed layer forming apparatus 42 may be a PVD (Physical Vapor Deposition) apparatus including a sputtering apparatus. Moreover, although the plating apparatus 43 may be comprised as the plating apparatus 43 which can plate various plating metals, for example, you may be comprised as a copper plating apparatus which mainly performs copper plating. Hereinafter, although the plating apparatus 43 may be referred to as a copper plating apparatus 43 and the plating process may be referred to as a copper plating process, these are examples and are not intended to be limited to copper plating.

  Next, a more detailed description of each component shown in FIG. 1 will be given.

  FIG. 2 is a diagram illustrating an example of an imaging method of the imaging unit 13 of the X-ray inspection apparatus 10 of the TSV formation production management system according to the embodiment of the present invention. As shown in FIG. 2, the imaging unit 13 includes an X-ray source 14 and a camera 15. The camera 15 is radiated from the X-ray source 14 toward the silicon substrate 60 and is disposed behind the silicon substrate 60 as a sample with respect to the X-ray source 14 in order to capture an X-ray image transmitted therethrough. The Thus, the silicon substrate 60 is sandwiched between the X-ray source 14 and the camera 15. Further, the imaging surface of the camera 15 faces the silicon substrate 60.

  As shown in FIG. 2, the imaging unit 13 has two images captured from two different angles, that is, an inclined image captured from an oblique direction and a top image captured from directly above the surface 61 of the silicon substrate 60. Get an image. Here, from the top image, it is possible to grasp the TSV70 and the horizontal cross-sectional shape of the void defect of the plating film formed in the TSV70, and from the inclined image, the external shape of the TSV as the vertical cross section and the void defect The shape in the vertical direction can be grasped.

  FIG. 3 is a diagram for explaining the significance of acquiring the top image in more detail. FIG. 3A is a diagram showing an example of the relative position of the X-ray source 14 and the camera 15, and FIG. 3B is a diagram showing an example of a top image of the TSV 70 on which a plating film containing voids is formed. It is.

  As shown in FIGS. 3A and 3B, after the plating process, the size of the void defect 90 can be measured as the area of the maximum width in the horizontal direction. That is, as shown in FIG. 3A, when acquiring the top image (upper surface image) of the TSV 70 and the plating film 80, the X-ray source 14 is disposed immediately above the TSV 70 and the plating film 80. In this way, the camera 15 is arranged directly below the X-ray source 14, the TSV 70, and the plating film 80. Thereby, the image of the horizontal direction cross section of TSV70 and the plating film 80 is acquirable, and shows the diameter of the plating film 80 with which the diameter of TSV70 and the TSV70 were filled as shown by the lower part of Fig.3 (a). be able to.

  As shown in the upper part of FIG. 3B, when the void defect 90 is generated in the plating film 80, the X-ray source is generated even when the void defect 90 is generated in the central portion of the plating film 80. As shown in the lower part of FIG. 3 (b), the diameter of the void defect 90 is shown transparently, and the size of the void defect 90 is set to the maximum in the horizontal direction. It can be measured as a large area.

  Thus, the X-ray transmission image is effective as a means for converting the size of the opening shape of the TSV 70 and the size of the void shape into information.

  FIG. 4 is a diagram for explaining acquisition of position information of the void defect 90 generated in the plating film 80. As shown in FIG. 4, the void defect 90 due to plating does not necessarily occur at the center position, but in addition to a pattern in which a void is generated at the center, a void defect 90 is generated inside the plating film 80 that is not the center. There are patterns and patterns in which void defects 90 are generated on the side wall portions. These various patterns can be grasped by acquiring a top image, and position information can be acquired by measuring the relative positional relationship of the TSV cross section of the void defect 90.

  As described above, acquiring the top image is also effective in acquiring the horizontal position information of the void defect 90.

  FIG. 5 is a diagram for explaining the significance of acquiring the tilted image in more detail. FIG. 5A is a diagram showing an example of the relative positions of the X-ray source, the silicon substrate, and the camera when acquiring the tilt image, and FIG. 5B is the tilt image obtained with the position of the camera. It is the figure which showed an example of this relationship.

  As shown in FIG. 5A, as a geometric meaning, the position to which the camera 15 has moved is parameterized as a value of the tilt angle θ with respect to the Z axis (vertical axis).

  As shown in FIG. 5B, when the camera 15 is relatively distant from the X-ray source 14, the inclination angle θ with respect to the Z axis increases, and information on the vertical direction of the silicon substrate 60 is easily obtained. .

  FIG. 6 is a model for obtaining an X-ray transmission image in the vertical direction when X-rays advance parallel to the inclination angle θ. Note that since the actual X-ray is a cone beam, X-rays are irradiated radially, but in FIG. 6, a simplified linear X-ray beam is considered.

  As shown in FIG. 6, the obtained X-ray transmission image is a transmission image in a situation where X-rays come from the tilt direction, so when viewing the rod-shaped TSV 70, as shown in the lower figure, There is a relationship such that the degree of X-ray absorption approximated to the normal distribution can be seen in the X-ray absorption distribution. That is, since X-rays do not come from the side surface of the TSV 70, it is not an environmental state in which uniform X-ray intensity can be obtained as a whole. Therefore, in order to accurately obtain the information in the vertical direction of the TSV 70 and the plating film 80, it is necessary to correct using the X-ray absorption distribution characteristic in consideration of the X-ray irradiation from the inclined direction. . In the TSV formation production management system and the TSV formation production management system according to the present embodiment, information on the vertical direction in the TSV 70 is acquired from the tilt image using such a correction method, for example.

  FIG. 7 is a diagram for explaining an example of the TSV 70 extraction method. In FIG. 7, an example of an image processing method for selecting an arbitrary TSV 70 from an X-ray transmission image and extracting an individual TSV 70 will be described.

  FIG. 7A is a diagram showing a state in which an arbitrary TSV 70 is selected from the X-ray transmission image. At the stage of acquiring the X-ray transmission image, a plurality of TSVs 70 are included in the X-ray transmission image, but the TSV 70 to be extracted is selected. Then, edge enhancement processing is performed on the selected TSV 70.

  FIG. 7B is a diagram illustrating an example of the TSV 70 from which the contour is extracted. As shown in FIG. 7B, the contour of the X-ray transmission image is enhanced, and then the region of interest (ROI) is measured using the enhanced contour. Note that the ROI is recorded as the area of the TSV 70 as shown in the right figure.

  FIG. 7C is a diagram showing a state in which only the TSV 70 that is the ROI is cut out and extracted from the contour portion. In this way, only the TSV 70 is extracted.

  FIG. 7D is a diagram illustrating an image obtained by performing binarization processing on the cut-out TSV 70. By performing the binarization process, the cut out TSV 70 can be displayed as a gray scale histogram. If there is one peak on the grayscale histogram, it means that a defect is not found, and if there are two or more peaks, it indicates that there is something that seems to be a defect. Primary determination of the presence or absence of the void defect 90 is possible.

  FIG. 8 is a diagram for explaining the relationship between the X-ray transmittance and the line profile. As an example of a technique for finding the void defect 90 generated in the plating film 80 in the TSV 70, it is conceivable to use characteristics that differ in the amount of X-ray energy absorbed in the material. Here, consider a case where the silicon substrate 60 is made of silicon (Si) and the plating film 80 is made of copper (Cu). Further, since the void defect 90 can be regarded as a void, it is basically considered that there is no energy absorption.

  The difference in absorption capacity can be represented by a mass absorption coefficient, and it can be seen from the mass absorption coefficient table that there is a relationship of Si (0.7) <Cu (4.8). This relationship is that, in a region where Cu, that is, TSV is present, the mass absorption coefficient is larger than that of Si, so that the transmission amount is low. In other words, the X-ray transmission image means that the Cu region is darker than the Si region. Therefore, in TSV70 without the void defect 90, a columnar dark image is drawn in Si.

  On the other hand, in TSV70 with voids (voids) 90, since there are voids in Cu, the amount of energy absorption of X-rays passing only through Cu and X-rays passing through the voids is different. Appears as a slight shading.

  FIG. 8 shows an X-ray transmission image having such shading and a result of a gray profile in gray scale. Since the line shape of the line profile is different at a location where the void defect 90 is present, the void defect 90 can be detected by calculating the difference from the line shape of the normal line profile.

  As described above, hereinafter, the material constituting the TSV 70 will be basically described by taking as an example the case of Si and Cu.

  By the way, it has been found that the generation pattern of the void defect 90 in Cu has a deep causal relationship with factors due to conditions in the Cu filling process. Therefore, by performing defect pattern shape recognition, it is possible to perform inline inspection for monitoring and managing the Cu embedding process. Hereinafter, the defect pattern will be described.

  FIG. 9 is a first diagram showing an example of a defect pattern generated depending on the Cu embedding process, and FIG. 10 is a second diagram showing an example of a void pattern generated depending on the Cu embedding process. FIG. 9 and 10 show nine defect patterns of types A to I that occur under predetermined conditions in the Cu filling process.

  As shown in FIGS. 9 and 10, the nine defect patterns are classified in consideration of the size, position, shape, and the like of the void defect 90. Here, nine typical defect patterns that can be distinguished by image processing, that is, recognizable, are listed rather than relevance to processing. The details of the correlation between the defect pattern of the void defect 90 and the process will be described later. First, how to distinguish and recognize these shapes will be described first.

  As described with reference to FIG. 6, an X-ray energy attenuation curve (transmission amount characteristic) is used to grasp the void defect 90. The attenuation of the X-ray energy can be identified from the relationship between the material and the distance. In the TSV defect inspection of the TSV formation production management system according to the present embodiment, first, a characteristic of the X-ray transmission amount as a standard TSV is made into a library.

  FIG. 11 is a diagram illustrating an example of the X-ray transmission amount characteristic when the void defect 90 does not exist in the plating film 80. In FIG. 11, the pan-shaped characteristic recessed in the center is shown as the X-ray transmission characteristic S, and each object TSV70 is inspected with reference to the standard characteristics made into such a library. Will do.

  FIG. 12 is a diagram showing X-ray transmission amount characteristics of two defect patterns. FIG. 12A is a diagram showing the X-ray transmission amount characteristic A of the bottomless pattern of type A in FIG. 9, and FIG. 12B is the X of the trunk cutout pattern of type E in FIG. It is the figure which showed the line transmission amount characteristic E. Also, in FIGS. 12A and 12B, the reference characteristic S of the library shown in FIG. 11 is shown superimposed for easy comparison.

  As shown in FIG. 12A, the X-ray transmission amount characteristic A of the bottom-through pattern of type A has a lower rate of X-ray absorption than the reference X-ray transmission amount characteristic S, and X-ray transmission The amount is increasing. Since this indicates that the content of TSV 70 is hollow rather than the reference, void defect 90 is present.

  The same can be said for the X-ray transmission amount characteristic E of the type E cut-off pattern shown in FIG. In other words, the X-ray transmission amount characteristic E indicates that the rate of X-ray absorption is suppressed and the X-ray transmission amount is increased more than the reference X-ray transmission amount characteristic S, and the void defect 90 is present. Has been.

  The type E X-ray transmission amount characteristic E is different in shape from the type A X-ray transmission amount characteristic A and has a sharply depressed shape. The difference between the type E and type A measurement lines is due to the difference in the shape of the space. However, only such X-ray transmission characteristics A, E, and S can be understood up to the existence of the void defect 90, but the exact shape of the void defect 90 cannot be recognized. Therefore, in order to recognize the shape, the outer shape of the void defect 90 is raised by image processing.

  FIG. 13 is a diagram showing an example of the X-ray transmission amount characteristic I in the type I defect pattern. In addition to comparing this type I X-ray transmission characteristic I with the standard X-ray transmission characteristic S, the void shape in the Cu plating film 80 can be identified by three-dimensionalization using contrast information. become. As described with reference to FIGS. 5 to 8, the void shape can be identified by using an inclined image and X-ray absorption characteristics and using image processing together.

  Next, the X-ray transmission characteristics of the nine patterns of types A to I shown in FIGS. 9 and 10 will be described. The transmission characteristic pattern of nine defects and the standard transmission characteristic pattern of TSV70 are registered in the standard library. Note that the nine patterns are exemplary patterns, and various patterns may be added or deleted depending on the application.

  FIG. 14 is a diagram showing an example of an X-ray transmission amount characteristic A of a type A bottomless pattern. Type A is a pattern showing the characteristic that the amount of X-ray transmission is reduced by the amount of the bottom from the normal pattern.

  FIG. 15 is a diagram illustrating an example of the X-ray transmission amount characteristic B of the bubble pattern in the type B TSV. Type B is a pattern having a characteristic of having a mountain (projection) corresponding to a reduced amount of transmission on the bottom of the pan due to an elliptical void defect 90.

  FIG. 16 is a diagram showing an example of the X-ray transmission amount characteristic C of the vertically long bubble pattern in the type C TSV. Type C is one of the variations of type B. Like type B, type C is a pattern having a characteristic of having a peak (projection) of the amount of permeation reduced on the bottom of the pan due to an elliptical void defect 90. The height of the mountain is increased as the defect 90 is increased in length and the amount of transmitted light is decreased.

  FIG. 17 is a diagram showing an example of the X-ray transmission amount characteristic D of the type D wall surface bubble pattern. Type D is a defect in which a bubble-like void defect 90 generated on the side wall surface of TSV 70 is generated, and a pattern showing a characteristic in which a side surface of a pan-shaped characteristic of a normal pattern is distorted.

  FIG. 18 is a diagram showing an example of an X-ray transmission amount characteristic E of a type E trunk cut-off pattern. Type E is one of the variations of type A, and is a pattern in which void defects 90 are formed over the entire horizontal direction. However, the X-ray transmission characteristic E has a shape of a slightly pointed depression convex downward. The pattern shows the characteristics.

  FIG. 19 is a diagram showing an example of the X-ray transmission amount characteristic F of the bottom corner pattern of type F in FIG. Type F is a pattern having a void defect 90 at the corner of the pan bottom, and the absorption characteristics at the corner of the pan bottom differ from a normal pattern depending on the size of the defect.

  FIG. 20 is a diagram showing an example of the X-ray transmission amount characteristic G of the type G donut omission pattern. Type G has a donut-shaped void defect 90 in the middle of the height direction of the TSV 70, and the X-ray absorption varies depending on the size of the donut, so the pattern of the side wall of the pan is different.

  FIG. 21 is a diagram illustrating an example of an X-ray transmission amount characteristic H of a type H tear-drop pattern. Type H is a void defect 90 generated inside the plating film 80 of TSV 70, and is one of variations of the characteristics of the pan bottom ridge (projection) similar to types B and C in terms of absorption characteristics.

  FIG. 22 is a diagram showing an example of the X-ray transmission characteristic I of the Eiffel tower missing pattern. Type I is one of the variations of type H. From the viewpoint of absorption characteristics, type I is one of variations of the characteristic pattern of the pan (projection) on the bottom of the pan, similar to types B, C, and H.

  In this way, some of the nine defect patterns are grouped into similar groups. These are also related to the cause of the defective processing, and details thereof will be described later. Next, a method for extracting the outline of an X-ray transmission image for recognizing these defect patterns will be described.

  FIG. 23 is a first diagram for explaining an example of an X-ray transmission image contour extraction method. Ultimately, the following procedure is required to make information about the size of the void defect 90 in the plating film 80 of the TSV 70.

  As shown in FIG. 23, in this method, the shape of the TSV 70 and the shape of the void defect 90 are informatized from three images (a plan view, a front view, and a side view) for the inspection object. Here, the plan view is a view from the Z-axis direction and is a view viewed from directly above. Information on which position of the void defect 90 exists on the horizontal sectional coordinate axis of the TSV 70 is acquired from the plan view.

  The front view is a diagram in which the TSV 70 is visually recognized along the Y-axis direction, and information on the height direction of the TSV 70 can be acquired. This also applies to the side view. The side view is a view of the TSV 70 viewed along the X-axis direction, and the height information obtained by changing the 90 ° camera angle from the front view is acquired.

  FIG. 24 is a second diagram for explaining an example of an X-ray transmission image contour extraction method. When three X-ray transmission images are acquired, the obtained X-ray transmission image is subjected to image processing to extract a contour. Note that image processing realized by general functions is sufficient for image processing. As shown in FIG. 24, by reading information from the image from which the contour has been extracted, it is possible to calculate the shape of the void defect 90 including the external size of the TSV 70, the plane coordinate position of the void defect 90, and the height information. .

  Specifically, FIG. 24 shows a state in which X-ray inspection is performed on the TSV 70 in which the void defect 90 of the type I bullet pattern is generated in the plating film 80, but the plan view shows the TSV 70. In addition, the plane coordinates of the void defect 90 can be specified. In FIG. 24, the void defect 90 exists near the center. Further, from the front view and the side view, the shape including the height information of the void defect 90 is calculated from the X-ray transmission amount characteristic.

  In this manner, X-ray transmission images from three directions are acquired, and information on the TSV 70 and the void defect 90 can be obtained based on the acquired X-ray transmission images.

  Next, how the defect process is specified after the defect pattern of the void defect 90 is recognized will be described.

  FIG. 25 is a table listing the nine defect patterns shown in FIGS. 9 and 10. The defect pattern depends on the process conditions, and specifically depends on, for example, the liner layer coverage, the seed layer coverage, and the electroplating condition change.

  For each of the nine defect patterns shown in FIG. 25, the relationship with the process conditions that cause the defects is caused. In the case of Type A, the void defect 90 is caused by the non-electrodeposition at the bottom, and the conduction is caused. There is a risk of failure. The type B and C void defects 90 are caused by pinch-off due to the influence of the amount of current during electrodeposition, and B and C are distinguished by differences in size and position. Type D is a void defect 90 attached to the wall surface, and Type E is a void due to electrodeposition loss due to a coverage defect in the seed layer. Type F is generation of void defect 90 at the bottom due to non-uniform electrodeposition due to coverage defects in the seed layer. Type G is a void defect 90 generated in a strip shape along the wall surface. Type H is a teardrop type in which the void defect 90 is confined. Type I is a bullet-like void defect 90.

  The relevance of these causes and results, such as process conditions and plating bath conditions, can generally be inferred.

  FIG. 26 is a diagram illustrating a first processing example of classification recognition based on feature amounts. FIG. 26A shows an image before processing, and FIG. 26B shows an image after processing. It is shown that after the feature amount is extracted, the outer shape of the TSV 70 and the outer shape of the void defect 90 can be clearly classified and recognized.

  FIG. 27 is a diagram illustrating a second processing example of classification recognition based on feature amounts. FIG. 27A shows an image before processing, and FIG. 27B shows an image after processing. It is shown that after the feature amount is extracted, the outer shapes of the plurality of I-type TSVs 70 and the outer shapes of the void defects 90 can be clearly classified and recognized.

  FIG. 28 is a diagram showing recognition examples for classification. As shown in FIG. 28, by extracting feature amounts from an X-ray transmission image, the outlines of the TSV 70 and the void defect 90 can be clearly recognized, and examples of classification into types C, B, and I are shown. Yes. As described above, the defect pattern of the void defect 90 can be accurately classified by extracting the feature amount. Specifically, edge enhancement processing is performed on the X-ray transmission image, and binarization and blob processing are performed, so that the outline, area, and peripheral length of the void defect 90 portion and the plating film 80 portion are obtained. Further, the circularity, the center of gravity position in the elliptical approximation, the relative position, and the like are calculated as feature amounts.

  FIG. 29 is a diagram illustrating an example in which edge enhancement processing is performed on the X-ray transmission images of the TSV 70 and the void defect 90. In FIG. 29, the edge line L of the TSV 70 and the edge line M of the void defect 90 are shown. Further, the barycentric coordinates (X, Y) of the void defect 90 are shown. The feature amount is extracted by converting various parameters into data.

  For example, a Parent number is assigned to each TSV 70 as an ID number. Then, the closed edge line M in the edge line L of the TSV 70 is recognized as a void defect 90 in each parent number, and the number of void defects 90 is counted. Both of these are extracted as feature amounts. Further, the area of the inner portion of the edge line M normalized by the area in the edge line L can be extracted as a feature amount called the area of the normalized void defect 90. Further, both the edge lines L and M are approximated as ellipses, and the relative values for the long side and short side values of the frame of the edge line L at the centroid coordinates (X, Y) of the edge line M can be extracted as feature amounts. . Further, the difference value between the inclination angles of the approximate ellipse of the edge line M and the approximate ellipse of the edge line L can also be extracted as the feature amount. Further, the roundness of the void defect 90 and the pixel value of the length of the edge line M (peripheral length of the void defect 90) can also be extracted as feature amounts. As described above, various parameters related to the position, shape, and size of the TSV 70 and the void defect 90 can be calculated as the feature amount. It should be noted that the contents shown here are merely examples, and various feature amounts may be set according to the application, and parameters corresponding thereto may be calculated.

  Classification of the calculated feature amount is performed by supervised learning. Various algorithms may be used as the supervised learning algorithm. For example, an algorithm such as K-NN (k-Nearest Neighbor algorithm) or SVM (Support Vector Machine) is used. Also good. Such classification recognition is performed by the void defect classification unit 21.

  Even if a plurality of types of void defects 90 are mixed in one TSV 70, the defect patterns of the respective void defects 90 can be classified and recognized by applying the method described so far.

  Next, a method for estimating the void volume using the MBL method (ModelBasedLibraryt) will be described. In order to do this, the MBL library is constructed by classifying the shape of the void defect 90 and modeling for each classification. Then, the shape of the CuTSV 70 including the void defect 90 is measured.

  FIG. 30 is a diagram illustrating an example of an overall scheme of a method for estimating the void volume using the MBL method.

  As shown in FIG. 30, as an overall scheme, defects are defined (S200), X-ray transmission images are acquired and image processing is performed (S210, S220), void defects 90 are recognized, classified, and data live. A library is created (S230), and supervised learning is performed to model each cluster type to create a library 240 (S240). In the defect inspection, an X-ray transmission image is acquired (S100), feature amounts are extracted (S110), defect recognition is performed using the created library 240 (S120), and classified data is output ( S130). In S140, the volume of the void defect 90 is estimated.

  FIG. 31 is a diagram showing an example of a processing flow for estimating the volume of the void defect 90. In FIG. 31, types A to C, H, and I are listed as void types to be subjected to volume measurement.

  Explaining the processing flow, in step S300, a rough model of the void defect 90 is created.

  In step S310, simulation is performed and a library is created.

  In step S320, a conversion function is created.

  In step S330, the volume of the void defect 90 is measured using the created function, and the result is output.

  FIG. 32 is a diagram illustrating an example of a model in which voids are simplified. FIG. 32A is a diagram illustrating an example of a void and TSV to be modeled, and FIG. 32B is a diagram illustrating an example of a void to be modeled.

  As shown in FIG. 32 (b), the void defect 90 is modeled as a three-dimensional ellipsoid, and an ellipsoidal void defect 90 having a major axis c and a minor axis b and a height c is formed. Approximated. At this time, the volume V of the void defect 90 is estimated as V = (4/3) πabc.

  As shown in FIGS. 32A and 32B, it is estimated that the axis of the ellipse coincides with the Z-axis of TSV70, and the image obtained as shown in FIG. The volume V can be obtained by approximation with the indicated values.

  FIG. 33 is a diagram for explaining the mechanism of void defect agglomeration estimation in the MBL method. As shown in FIG. 33, the void defect inspection includes four steps S100 to S130. In defect inspection, image pre-stage processing is first performed (step S100), and then feature values are extracted (step S110). The feature amount is recognized by learning (step S120) to improve efficiency. In the finishing, an estimation result is output by a pattern matching function for selecting a similar pattern (step S130). At this time, it is possible to improve the recognition efficiency by learning so that the feature amount is appropriately arranged by the defect pattern library 240 so that it can be efficiently used. Since steps S200 to S240 correspond to the contents described in FIG. 30, the same steps as those in FIG. 30 are denoted by the same step numbers and description thereof is omitted.

  Next, the TSV formation process production technique will be described.

  FIG. 34 is a diagram showing an example of a series of steps for forming a TSV. As shown in FIG. 34, the elements of the TSV formation process include a trenching (etching) step S400, a barrier / seed layer formation (PVD) step S410, a plating step S420, and a planarization (CMP) step S430. Including. Although the TSV formation process may include other processes, in the present embodiment, for convenience of explanation, the TSV formation process will be described with an example including the above-described four processes.

  In addition, as described above, an in-line inspection process is provided, and the in-line inspection process is a non-destructive inspection and uses an ultra-high resolution X-ray inspection apparatus 10 that generates a nano-level X-ray transmission image. And

  In FIG. 34, the groove digging step of step S400 is a process of digging holes of TSV 70 in the silicon substrate 60 by etching. In the grooving process, inspection and measurement for confirming that the shape and dimensions of the opening are within the specified values are performed using an X-ray transmission image. Here, as an inspection method, a wafer to be inspected is selected from a wafer in a lot by a sampling method. Measurement is performed on several TSVs in the selected wafer.

  Here, when the shape and dimension of the opening of TSV70 are wider or narrower than the specification standard, the problem of the grooving process is pointed out by reporting it as a measured value. Note that an in-line inspection by the X-ray inspection apparatus 10 may be performed immediately after the grooving process.

  In the inspection after the barrier / seed layer forming step in step S410, the seed layer film overhang in this process is inspected with reference to the dimension information of the opening in the measurement after the trenching process.

  In order to inspect the overhang, the opening of the TSV 70 from the Z-axis direction (directly above) is inspected and image processing using the transmittance of the seed material from the oblique direction (X-axis and Y-axis) is used. Then, an estimated value of the film thickness is obtained. Information for pass / fail judgment of the barrier / seed layer forming process is presented from the obtained estimated value and shape.

  In the inspection after the plating process in step S420, the presence / absence of the void defect 90 in the plating film 80 and the information on the position and size of the void defect 90 are inspected and measured.

  From the binarization based on the presence / absence of the void defect 90 and the image analysis of the defect information in the presence of the void defect 90, calculation is made as a detailed feature amount into defect classification, defect position information, defect shape, and size information. . Based on these results, if the production standard value is exceeded, it is determined that the inspection has failed, and if it is within the standard, an inspection pass determination is made.

  In the TSV formation production management system and the TSV formation production management method according to the present embodiment, feedback from the defect type, position, and size information to the barrier layer and seed layer process, plating bath conditions (additive material, Cu in the plating process) Control is performed to feed back and / or feed forward the amount of ions, etc.) and plating conditions (current density, plating bath stirring speed, etc.).

  Further, if necessary, it is grasped by measuring the plating film thickness whether or not an excessive plating film is formed on the wafer surface layer by overplating, and as film thickness information to the next CMP process S430. Simultaneously with the feedforward, it notifies the plating apparatus 43 that is its own process that it is necessary to adjust the process conditions.

  FIG. 35 is a diagram showing an example of a high quality management production system based on inspection, feedback, and feedforward. The description in FIG. 35 corresponds to the above description, and it is possible to optimize the production cost by executing the TSV formation process in synchronization with the inspection process and progressing the wafer. A mechanism. In FIG. 35, the sampling inspection of the grooving process is not shown, but the sampling inspection may be performed using the X-ray inspection apparatus also in the grooving process.

  More specifically, by adopting such a structure and utilizing inspection / measurement result information for wafer processing, it is possible to save useless wafer processing time and lead to optimization of manufacturing cost as a product. The TSV formation production management system and the TSV formation production management method according to this embodiment are characterized by destructive inspection used in the conventional wafer manufacturing process and FIB (Focus Ion Beam Micorscopy, focusing that requires a high vacuum state). An ultra-high resolution X-ray inspection that is not destructive and does not require high vacuum, and can be inspected in a short time, rather than an inspection that requires a long time using an ion beam microscope) or SEM (Scanning Electron Microscopy). It is meaningful to combine the devices 10. That is, destructive inspection and inspection using SEM cannot be reflected in wafer processing of the same lot that is actually flowing, and can only be used for long-term process condition inspection. In the TSV formation production management system and the TSV formation production management method according to the present embodiment, it is possible to correct a defective process found by inspection within the same lot without stopping the process.

  By handling the fine structure of the X-ray tube (mechanism for generating an electron gun and X-rays) that is a key component of the ultra-high resolution X-ray inspection apparatus 10 as X-ray transmission information from the characteristics of the material, From the measurement of defect shape, position information, film thickness, etc., it can be converted into information as inspection results. Thereby, the TSV formation production management system and the TSV formation production management method according to the present embodiment establish a mechanism as a TSV production technology system.

  The mechanism of the TSV production technology system is compatible even if the X-ray inspection apparatus 10 is mounted as an in-situ module as an inspection module of the barrier / seed formation apparatus 42 or positioned as a stand-alone inspection apparatus. .

  Further, the X-ray inspection apparatus 10 can be implemented as an in-situ module as an inspection module of an etching apparatus, a barrier / seed layer forming apparatus, or a plating apparatus 43, or positioned as a stand-alone inspection apparatus. The mechanism is compatible. Therefore, as shown in FIG. 1, two X-ray inspection apparatuses 11 and 12 may be provided, or only one may be provided as necessary.

  FIG. 36 is a diagram showing classification of what phenomenon appears depending on the result of the plating step in a series of TSV formation steps. In FIG. 36, overhangs, overplating, and void defects are shown as defect treatments. The void defect is a failure process that has been mainly described so far. In addition to the void defect, there are failure processes such as overhang and overplating. In the following, these defective processes in general will be described. Note that the void defects 90 described so far are given symbols of types A to I. The pattern of the void defect 90 newly shown in FIG. 36 is marked with type J and K symbols. Type J is a void defect 90 formed in the upper part of the plating film 80, and type K is a void defect 90 formed in the lower layer of the plating film 80.

  Overhang is a phenomenon that occurs mainly due to a defect in the seed layer, and void defects appearing in the plating process, such as types I, C, and B, that are close to a conical shape such as a bullet shape are centered on the central axis. Appear in

  Overplating is a phenomenon in which the plating film 80 is unnecessarily deposited on the wafer surface in the plating process, and is caused by insufficient plating time and plating solution management as process control. Overplating does not cause the void defect 90 in the plating film 80, but causes the production cost to increase because the plating solution is wasted.

  The plating solution management is very important from the viewpoint of production cost, and in particular, the plating solution management is an important factor in the TSV forming process. Depending on the shape of the plating film 80 embedded in the TSV 70 after the plating process, there are defects due to overplating and underplating. Ford back and correct it.

  It has been found that void defects 90 occur due to subtle differences in the current density of the current supplied to the wafer in the plating bath during the plating process. In the case of the void defect 90 generated at the bottom of the TSV 70, since the current density mainly at the bottom is low, adjustment such as stirring is necessary as a process. Further, in the case of the void defect 90 generated in the side wall portion, since the current density in the side wall portion is mainly low, adjustment such as stirring is necessary as the process.

  The void defect 90 such as type K generated in the lower layer portion of the TSV 70 that is not overhang is caused by poor plating solution and stirring conditions in the plating tank.

  Like the types E and G, the void defect 90 generated on the low wall surface of the TSV 70 is considered to be a poor coverage of the seed layer in the side wall portion. Another factor is due to poor stirring in the plating process.

  As in types A and F, the void defect 90 generated on the bottom wall surface may have a poor seed layer coverage on the bottom wall portion. Another factor is a poor agitation in the plating process.

  Next, a feedback / feedforward control method to the process by inspection using an X-ray transmission image will be described.

  FIG. 37 is a diagram for explaining an example of a feedback / feedforward control method for the opening shape of the barrier / seed layer.

  FIG. 37A is a cross-sectional view of an example of the barrier / seed layer, and FIG. 37B is a top view of an example of the barrier / seed layer having a wide opening. FIG. 37C is a top view of an example of the barrier / seed layer having a narrow opening, and FIG. 37D is a diagram showing an example of the defect processing specifying step. FIG. 37 (d) corresponds to FIG.

  It has been found that if the shape of the opening of the TSV 70 after the barrier / seed layer process is defective, a void defect 90 is generated in the TSV 70 in the plating process. Therefore, a TSV opening shape inspection is performed as an inspection for determining whether to proceed to the plating process from the barrier / seed layer forming process or not.

  In the TSV opening shape inspection, after the barrier / seed layer formation step, the opening of the TSV 70 is imaged from directly above with the X-ray inspection apparatus 11 (built-in module). A non-defective product / defective product is determined by calculating the shape of the opening from the acquired X-ray transmission image.

  As shown in FIG. 37A, the seed layer 75 closes the opening of the TSV 70 and protrudes toward the center side.

  As shown in FIG. 37B, if the opening is wide, the void defect 90 is unlikely to occur in the plating process. On the other hand, as shown in FIG. 37 (c), if the opening is closed and narrowed by the seed layer 75, void defects 90 are likely to occur in the plating process.

  As shown in FIG. 37D, in the defect processing specifying step, the shape of the opening of the seed layer 75 is measured from the acquired X-ray transmission image of the upper surface. The measured opening shape is input to the defect identification processing unit 225. The defect processing specifying unit refers to the data of the via specification 241 and the pass / fail determination data 248 to determine whether the input opening shape is a non-defective product or a defective product. At the time of defect determination, the process conditions of the barrier / seed layer forming step are changed based on the shape information of the opening. Specifically, the control unit 23 instructs the barrier / seed layer forming apparatus 42 to perform change processing for changing the process condition to increase the opening diameter of the opening.

  FIG. 38 is a diagram for explaining a defect processing specifying step when a void due to an overhang occurs. FIG. 38 corresponds to FIG.

  As described with reference to FIG. 37, it can be seen from the shape of the opening of the TSV 70 after the barrier / seed layer formation step whether or not the void defect 90 occurs in the plating step. This is because, even when the void defect 90 is detected by an X-ray transmission inspection after plating (by a dedicated inspection apparatus or a built-in inspection module), the defect caused by the narrowness of the opening of the TSV 70 from the shape of the void defect 90. It turns out that it is. Such a defect is determined as a void defect 90 due to an overhang.

  In this case, there are two possible factors, one is poor opening shape and the other is poor adjustment of additive / accelerator. In this case, the defect processing specifying step is performed as follows.

  As shown in FIG. 38, after the X-ray transmission image is input to the defect processing specifying unit 222, the defect processing specifying unit 222 performs inspection in the barrier / seed layer forming process and uses the opening shape measurement value 242. Compare with shape data from imaging data. Next, the defect processing specifying unit 222 calculates a void particle shape from the X-ray transmission image using an MBL method or the like. The calculated data value is compared with the pattern data 243 including types C and I, and when it is determined that the pattern corresponds to the pattern, it is determined as a void defect 90 due to the shape of the opening of the seed layer 75. In this case, the control unit 23 instructs the barrier / seed layer forming apparatus 42 to perform a changing process for increasing the opening diameter of the seed layer 75.

  On the other hand, when the additive / accelerator adjustment is poor, the void particle shape is calculated from the X-ray transmission image using the MBL method, and the calculated data value is compared with the pattern data 243 and corresponds to the pattern. It is the same as the overhang until the point of determination. Next, from the trend information (SPC) due to sequential processing in the plating apparatus 43 and the bathtub and the trend (trend information) due to the additive / accelerator, it is recognized that similar void defects 90 frequently occur in recent processing. Therefore, it is determined as an additive / accelerator adjustment failure.

  Thereafter, the controller 23 instructs the plating solution management device (not shown) to perform the additive / promoter adjustment process, thereby performing the additive / promoter adjustment process to reduce the void defect 90. Do.

  FIG. 39 is a diagram for explaining an example of the defect processing specifying process when a void resulting from the plating process occurs. FIG. 39 corresponds to FIG.

  In FIG. 39, by detecting the void defect 90 by the X-ray transmission inspection after the plating process (by a dedicated inspection apparatus or a built-in inspection module) and identifying the cause of the poor adjustment of the process conditions in the plating apparatus 43, the plating apparatus 43 shows a mechanism for automatically instructing process condition change control.

  If a void defect 90 such as types K and H as shown in FIG. 39 is detected in the shape determination of the void defect 90, it is recognized as a void defect 90 in the TSV 70 for classification. Depending on the shape of the void defect 90, it may lead to poor pH control or poor stirring speed. The stirring speed is characterized not by the speed alone but by the relationship with the filling. By reading from the graph 245g showing the relationship between the stirring speed and the filling, the filling failure is confirmed and adjusted in the next process. It will be. On the other hand, if it is not a problem of the stirring speed, it is considered that the pH control is poorly adjusted, so that the plating solution is managed. These correspondences are automatically performed by the control unit 23 based on the determination of the defect processing specifying unit 223.

  FIG. 40 is a diagram for explaining an example of the defect processing specifying step when a void is generated on the side wall surface. FIG. 40 corresponds to FIG.

  The main cause of the void defect 90 in contact with the side wall surface is a process failure due to unevenness of the seed layer 75. Further, as a secondary factor, there is a poor balance between the additive and the accelerator. Therefore, the cause of the void defect 90 in contact with the side wall surface can be determined by the position and shape of occurrence.

  Since the stirring speed is characterized not by the stirring speed alone but by the relationship with the filling, the filling failure is confirmed by reading the graph 245g showing the relationship between the stirring speed and the filling ratio. When it originates in the stirring speed, the control unit 23 instructs the plating apparatus 43 to adjust the stirring speed of the plating apparatus 43 in the next process.

  In the case of the additive / accelerator adjustment failure, the void particle shape is calculated from the X-ray transmission image input to the failure processing specifying unit 224 using the MBL method or the like. The calculated data is compared with the pattern data 246 including types D, F, A, E, and G, and if applicable, the pattern is determined. Next, by recognizing that the same void defect 90 frequently occurs in the recent process from the trend information (SPC) by the sequential processing in the plating apparatus 43 and the bathtub and the trend (trend information) by the additive / accelerator. Therefore, it is determined that the additive / accelerator adjustment is poor. And the control part 23 will instruct | indicate to perform the adjustment process which adjusts an additive / accelerator appropriately to a plating solution management apparatus (not shown).

  The void defect 90 resulting from the dissolution of the seed layer 75 is caused by the fact that the seed layer 75 is not included in the plating solution in the TSV 70 if the stirring speed is slow when the plating process is performed in a state where Cu is thinly deposited on the seed layer 75. The part is melted, and a void defect 90 is formed on a part of the side wall surface. In this case, the control unit 23 instructs the barrier / seed layer forming apparatus 42 to make the conditions of the seed layer 75 appropriate.

  The void defect 90 caused by the seed layer unevenness is in contact with the TSV wall surface even if the processing conditions are appropriate in the plating process when Cu is uniformly coated on the wall surface of the TSV 70 in the process step of the seed layer 75. Occur. This is because the conditions for the process step of the seed layer 75 are inappropriate. Therefore, the control unit 23 issues an instruction to change the process condition so as to optimize the process step of the seed layer 75. This is performed on the forming apparatus 42.

  Thus, according to the position and shape of the void defect 90, the defect processing identifying unit 22 identifies the defect process that causes the void defect 90, whereby appropriate feedback / feedforward control can be performed.

  FIG. 41 is a diagram for explaining a process for specifying a defective process that induces in-plane variation. FIG. 41 corresponds to FIG.

  In order to detect in-plane variation, the TSV 70 void defect occurrence status at a plurality of points in the wafer surface is grasped. Specifically, as shown in the example of the measurement pattern data 247, a plurality of measurement locations are designated within the surface of the silicon substrate 60, and several TSVs 70 are selected at the designated locations. The selected TSV 70 is inspected and aggregated as a statistical value per area. This is measured for several points in the plane, and the tabulated results of the in-plane inspection and the in-plane variation are output as a three-dimensional information on a three-dimensional map. In addition, the defect processing specifying unit 221 uses the measurement pattern data 247 at a plurality of points to calculate the void grain standard deviation value at each point, the classification of the void defect 90 at each point, and the like as necessary. And when the situation where in-plane nonuniformity has occurred is confirmed from a three-dimensional map or the like, it is presumed that the current (electric field) distribution in the plating tank is uneven. Adjustments are made to return the current (electric field) distribution to normal. In order to calculate the adjustment amount for returning to normal, the particle shape of the void defect 90 is quantified in the measurement of in-plane uniformity. The adjustment control is performed by the control unit 23 in the same manner as in the above example.

  FIG. 42 is a diagram for explaining processing for determining an overplate failure. FIG. 42 corresponds to FIG.

  Even if the void defect 90 is not detected in the plating process, if the stacking amount of the plating film 80 is larger than the spec, the time for the CMP apparatus 44 to polish Cu in the planarization process, which is the next process, becomes long, and the plating process is performed. The process time of the plating treatment in the process becomes long, and the process cost increases. Therefore, in the X-ray transmission inspection after the completion of the plating process, optimization of the plating process time can be performed by measuring the overplate as necessary.

  The law used here obtains the cross-sectional area S1 of TSV70 obtained from the X-ray transmission image from the relationship between the cross-sectional area of TSV70 and the plating time, and feeds back the optimum value as the plating time to the plating apparatus 43 from this characteristic. Further, the CMP apparatus 44 can feed forward a necessary polishing amount.

  Next, the processing flow of the TSV formation production management method according to the present embodiment will be described with reference to FIG. FIG. 43 is a diagram showing an example of a processing flow of the TSV formation production management method according to the embodiment of the present invention.

  In step S500, the etching process is performed by the etching apparatus 41. As a result, the TSV 70 is formed on the silicon substrate 60.

  In step S <b> 510, the barrier / seed layer forming apparatus 42 forms a barrier layer and a seed layer 75 on the surface of the TSV 70.

  In step S520, shape imaging of the TSV 70 is performed. The shape imaging of the TSV 70 is performed by acquiring an X-ray transmission image by the X-ray inspection apparatus 11.

  In step S530, the shape inspection of the TSV 70 and the seed layer 75 is performed. Specifically, the shape of the seed layer 75 in the opening of the TSV 70 is inspected.

  In step S540, the shapes of the TSV 70 and the seed layer 75 are determined, and it is determined whether or not the shape is defective. This determination is performed by the defect processing specifying unit 225. In this step, if it is determined that the shape of the TSV 70 itself is defective, the process proceeds to step S550, and if it is determined that the seed layer 75 is defective, the process proceeds to step S560. On the other hand, if it is determined that the TSV 70 and the seed layer 75 are non-defective, the process proceeds to step S570.

  In step S550, the control unit 23 instructs the etching apparatus 41 so that the processing conditions of the etching process are changed and the shape of the TSV 70 is optimized. Thereby, the etching process by the etching apparatus 41 is optimized.

  In step S560, the control unit 23 instructs the barrier / seed layer forming apparatus 42 to change the processing conditions of the barrier / seed layer forming process so that the seed layer 75 does not overhang. Thereby, the overhang of the seed layer 75 is eliminated.

  In step S <b> 570, a plating process for embedding the Cu plating film 80 in the TSV 70 is performed by the plating apparatus 43.

  In step S580, it is inspected whether or not the void defect 90 exists in the TSV 70 filled with the plating film 80. Void defect imaging is performed by the X-ray inspection apparatus 12.

  In step S590, void defect measurement is performed. By extracting the feature amount of the void defect 90, the position and size of the void defect 90 are measured.

  In step S600, the void defect 90 is classified. The void defect classification is performed by the void classification unit 21, and then, the defect processing specifying unit 22 classifies the void defect 90 in more detail including the relationship with the defect processing.

  In step S <b> 610, the control unit 23 calculates a plating condition parameter in order to correct the defect process specified by the defect process specifying unit 22, and instructs the plating apparatus 43 to perform a change process for correcting the defect process. That is, a process in which the process condition is changed is instructed. Thereby, the process of the plating apparatus 43 is optimized.

  In step S620, the film thickness measurement of the Cu plating film 80 is performed in parallel with the void defect measurement in step S590. Thereby, it can be determined whether or not there is an overplate.

  In step S630, if it is determined in step S620 that there is an overplate, the excess film thickness is calculated. The calculated excess film thickness is sent to the CMP apparatus 44 and used as polishing amount data in the CMP apparatus 44.

  In step S640, a planarization process is performed by the CMP apparatus 44. In the planarization step, the plating film 80 is polished and planarized.

  As described above, the TSV formation production management method according to the embodiment of the present invention can quickly change and adjust the processing conditions of the processing apparatus 40 when there is a defect processing by providing the X-ray inspection process in-line. It becomes possible to perform high-quality TSV formation.

  In addition, the TSV formation production management system and the TSV formation production management method according to the embodiment of the present invention include a CPU and a computer program, or a recording medium 30 on which the computer program is recorded and the CPU, as described with reference to FIG. It is feasible.

  It is a well-known fact that the cost of the plating process accounts for 40% in the production of a product type having a TSV forming step, and it is extremely important to perform the plating process at a low cost while maintaining the high quality of the product. .

  According to the TSV formation production management system, the TSV formation production management method, and the recording medium and program using these according to the present embodiment, it is possible to avoid useless wafer processing and to suppress useless consumption of the plating solution. And the total production cost can be reduced. In addition, since it can automatically correct the TSV defects, it can also play an expert system role, and even if it is not an operator who is familiar with the TSV formation process, the TSV formation process can be operated appropriately. It also has the advantage that it can be done.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present invention. Can be added.

DESCRIPTION OF SYMBOLS 10, 11, 12 X-ray inspection apparatus 13 Imaging part 14 X-ray source 15 Camera 20 TSV production management apparatus 21 Void defect classification | category part 22 Defect process specific | specification part 23 Control part 24 Storage part 30 Recording medium 40 Processing apparatus 41 Etching apparatus 42 Barrier / Seed layer forming device 43 Plating device 44 CMP device 60 Silicon substrate 61 Surface 70 TSV
80 Plating film 90 Void defect

Claims (23)

An X-ray inspection apparatus that acquires an image showing the shape of the through silicon via formed in the silicon substrate and the state of the plating film in the through silicon via, and detects void defects in the plating film from the acquired image;
A defect pattern determination means for classifying the detected void defect into a predetermined defect pattern;
In accordance with the classified predetermined defect pattern, a defect processing specifying means for specifying a defect process that causes the void defect;
A through silicon via formation production management system comprising: control means for instructing a processing apparatus performing the defect processing to perform a modification process for correcting the defect processing. The X-ray inspection apparatus acquires the image including the size and position information of the void defect generated in the plating film in the through silicon via,
2. The through silicon via formation production management system according to claim 1, wherein the defect pattern determination unit performs classification of the predetermined defect pattern based on the acquired image including the size and position information of the void defect. The X-ray inspection apparatus has an X-ray source that emits X-rays, and a camera that images the shape of the through-silicon via and the state of the plating film in the through-silicon via,
The camera is moved in a horizontal direction relative to the silicon substrate, and an upper surface image and an inclined image of the void defect generated in the through silicon via and the plated film in the through silicon via of the silicon substrate are taken. The through silicon via formation production management system according to claim 1, wherein an image including size and position information of the through silicon via and the void defect in a horizontal plane and a vertical plane is acquired.   In the X-ray inspection apparatus, the shape of the through silicon via, the plating film and the void defect are indicated by the difference in shading due to the difference in X-ray absorption rate of silicon, metal and air, and the shape of the through silicon via and 4. The silicon according to claim 1, wherein the image indicating the state of the plating film in the through silicon via is acquired, and the defect is detected based on the difference in shading of the acquired image. Through via formation production management system. The X-ray inspection apparatus expresses the difference between the shades by an X-ray transmission amount characteristic,
5. The through silicon via formation production management system according to claim 4, wherein the defect pattern determination unit forms a library of characteristics of the X-ray transmission amount characteristics and classifies and registers the characteristics as the predetermined defect pattern.   The X-ray inspection apparatus performs image processing for extracting a contour of the image acquired by the X-ray inspection apparatus, acquires the shape of the through silicon via, the size and position information of the void defect, and removes the defect. The through silicon via formation production management system according to any one of claims 1 to 5 to be detected.   The through silicon via formation production management system according to any one of claims 1 to 6, wherein the predetermined defect pattern is classified based on a position and a size of the void defect in the through silicon via.   The predetermined defect pattern includes a void pattern in which the void defect has a shape approximate to a conical shape in the vicinity of the center in the through silicon via, and a void pattern in which the void defect occurs on a bottom wall surface in the through silicon via. The silicon penetration according to claim 7, comprising at least one of a pattern in which the void defect occurs along a side surface in the through silicon via and a void pattern in which the void defect occurs in a lower layer portion in the through silicon via. Via formation production management system. The X-ray inspection apparatus extracts feature quantities of the through silicon via and the void,
9. The through silicon via formation production management system according to claim 1, wherein the defect pattern determination unit recognizes and classifies the extracted feature amount using a supervised learning algorithm. 10.   The defect processing specifying unit specifies the defect processing by comparing the specification of the through silicon via, the data of the defect pattern, and the detected void defect. The through silicon via formation production management system according to item.   11. The through silicon via formation production management system according to claim 10, wherein the defect processing specifying unit is further used for comparison with the detected void defect in which data indicating characteristics of a predetermined parameter of processing conditions is also detected.   12. The control unit according to claim 1, wherein the control unit performs the change process by performing feedback control and / or feedforward control during processing of a silicon substrate of the same lot as the inspected silicon substrate. Through silicon via formation production management system. The X-ray inspection apparatus is provided as an in-line inspection apparatus on the downstream side of the plating apparatus for performing the plating treatment of the silicon substrate,
The processing device in which the control means instructs the change processing is the plating device, a seed layer forming device that forms a seed layer on the surface of the through silicon via, and / or the plating film after the plating treatment is planarized 11. The through-silicon via formation production management system according to claim 10, further comprising a CMP apparatus that performs the process. The processing device instructing the change processing by the control means is a plating processing device,
The change process includes a process for increasing the current density at the location where the void is generated, a process for adjusting the stirring speed during the plating process, a process for adjusting the pH value of the plating solution, an additive and / or acceleration of the plating solution. The through silicon via formation production management system according to claim 11, comprising at least one of processes for adjusting the agent. The X-ray inspection apparatus acquires the image including the size and position information of the void generated in the plating film in the plurality of through silicon vias formed at a plurality of points on the silicon substrate,
The defect pattern determination means classifies the voids of the through silicon vias at the plurality of points into the predetermined defect patterns, respectively.
The control means calculates an in-plane variation in the plating process of the silicon substrate based on the classified predetermined defect pattern, and corrects the in-plane variation by adjusting a current distribution during the plating process. The through silicon via formation production management system according to claim 12, wherein the changing process is instructed to the plating apparatus. The defect processing specifying means measures the thickness of the plating film formed on the surface of the silicon substrate from the image acquired by the X-ray inspection apparatus,
The control means specifies the failure processing as overplating when the thickness of the plating film is larger than a predetermined value, and feedforward controls the change processing for polishing the overfilm thickness in the CMP apparatus. 12. The through silicon via formation production management system according to 12. The processing device that the control means instructs the change processing is the seed layer forming device,
The through silicon via formation production management system according to claim 12, wherein the change process is a process of reducing thickness unevenness of the seed layer. A second X-ray inspection apparatus that acquires an image showing the shape of the through silicon via and the state of the seed layer in the through silicon via before the plating film is formed in the through silicon via;
Based on the image showing the shape of the through-silicon via and the state of the seed layer in the through-silicon via, the defect processing specifying means determines the shape defect of the through-silicon via and / or the seed layer of the through-silicon via. Identify overhangs that are filmed more above the bottom as seed layer defects,
18. The through silicon via formation according to claim 1, wherein the control unit instructs the change process to an etching apparatus for forming the through silicon via or a seed layer forming apparatus for forming the seed layer. Management system.   The through-silicon via formation system according to any one of claims 1 to 18, wherein the control unit calculates a parameter necessary for the change process when instructing the change process. Defect detection in which an image showing the shape of the through silicon via formed in the silicon substrate and the state of the plating film in the through silicon via is obtained by X-ray inspection, and the void defect in the plating film is detected from the obtained image Process,
A defect pattern determination step for classifying the detected void defect into a predetermined defect pattern;
In accordance with the classified predetermined defect pattern, a defect process specifying step for specifying a defect process that causes the void defect;
A through silicon via formation production management method comprising: a control step of instructing a processing apparatus performing the defect processing to perform a changing process for correcting the defect processing.   The control step is performed by feedback control or feedforward control instructing the processing apparatus to perform the change processing during processing of a silicon substrate of the same lot as the silicon substrate from which the image is acquired by the X-ray inspection. 20. The through silicon via formation production management method according to 20. Using the image showing the shape of the through silicon via formed in the silicon substrate acquired by the X-ray inspection and the state of the plating film in the through silicon via, the computer
Defect detection means for detecting void defects in the plating film from the acquired image,
A defect pattern judging means for classifying the detected void defect into a predetermined defect pattern;
According to the classified predetermined defect pattern, the defect process causing the defect is identified, and a change process for correcting the defect process is instructed to the processing apparatus performing the defect process. A computer-readable recording medium recording a through silicon via formation production management program for functioning as a control means. Using the image showing the shape of the through silicon via formed in the silicon substrate acquired by the X-ray inspection and the state of the plating film in the through silicon via, the computer
Defect detection means for detecting void defects in the plating film from the acquired image,
A defect pattern judging means for classifying the detected defect into a predetermined defect pattern;
According to the classified predetermined defect pattern, the defect process causing the defect is identified, and a change process for correcting the defect process is instructed to the processing apparatus performing the defect process. Through silicon via formation production management program for functioning as control means.