JP2018048044A - PRODUCTION METHOD OF SiC SINGLE CRYSTAL - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a production method of a SiC single crystal capable of growing stably a 4H-SiC single crystal.SOLUTION: There is provided a production method of a SiC single crystal for performing crystal growth of the SiC single crystal by bringing a seed crystal substrate held by a seed crystal holding shaft into contact with Si-C solution having a temperature gradient in which a temperature is lowered gradually from an inner part toward a liquid surface. In the production method of the SiC single crystal, the seed crystal substrate is 4H-SiC, and has (000-1) plane and {1-10k} plane (k is an integer of 1-4) on the periphery of the (000-1) plane, and performs crystal growth from the (000-1) plane and the {1-10k} plane.SELECTED DRAWING: Figure 3

Description

  The present disclosure relates to a method for producing a SiC single crystal.

  SiC single crystals are very thermally and chemically stable, excellent in mechanical strength, resistant to radiation, and have excellent physical properties such as higher breakdown voltage and higher thermal conductivity than Si single crystals. . Therefore, it is possible to realize high power, high frequency, withstand voltage, environmental resistance, etc. that cannot be realized with existing semiconductor materials such as Si single crystal and GaAs single crystal, and power devices that enable high power control and energy saving. Expectations are growing as next-generation semiconductor materials in a wide range of materials, high-speed and large-capacity information communication device materials, in-vehicle high-temperature device materials, radiation-resistant device materials and the like.

  Conventionally, as a method for growing a SiC single crystal, a gas phase method, an Acheson method, and a solution method are typically known. Among the vapor phase methods, for example, the sublimation method has drawbacks such as the formation of lattice defects such as hollow through defects called micropipe defects and stacking faults and heterogeneous polytypes (crystal polymorphism) in the grown single crystal. However, many of SiC bulk single crystals have been conventionally produced by a sublimation method, and attempts have been made to reduce defects in grown crystals. In the Atchison method, since silica and coke are used as raw materials and heated in an electric furnace, it is impossible to obtain a single crystal with high crystallinity due to impurities in the raw materials.

  In the solution method, a Si melt formed by melting a Si melt or a metal other than Si in a graphite crucible, C is dissolved in the melt, and a SiC crystal layer is formed on a seed crystal substrate placed in a low temperature portion. It is a method of growing by precipitation. In the solution method, crystal growth is performed in a state close to thermal equilibrium as compared with the gas phase method, so that it is possible to reduce the number of defects and hardly produce different types of polytype. For this reason, several methods for producing SiC single crystals by the solution method have recently been proposed (Patent Document 1).

JP 2009-249192 A

  For example, Patent Document 1 proposes a method of growing a single crystal by adding a specific element to a Si melt for the purpose of stably flatly growing a 4H—SiC single crystal. However, in the conventional method such as Patent Document 1, it is still difficult to stably increase the 4H maintenance rate.

The present disclosure relates to a SiC single crystal in which a SiC single crystal is grown by bringing a seed crystal substrate held on a seed crystal holding shaft into contact with a Si-C solution having a temperature gradient that decreases from the inside toward the liquid surface. A manufacturing method comprising:
The seed crystal substrate is 4H—SiC and has a (000-1) plane and a {1-10k} plane (k is an integer of 1 to 4) around the (000-1) plane, and (000 -1) crystal growth from the plane and {1-10k} plane,
The manufacturing method of the SiC single crystal containing is included.

  According to the method of the present disclosure, the 4H maintenance rate of the SiC single crystal to be grown can be increased.

FIG. 1 is a schematic external view of a generally used disc-shaped seed crystal substrate. FIG. 2 is a schematic cross-sectional view showing an aspect of crystal growth from a seed crystal substrate having a (000-1) plane and a {1-10k} plane. FIG. 3 is a schematic external view of a seed crystal substrate used in the method of the present disclosure. FIG. 4 is a schematic cross-sectional view illustrating an example of an SiC single crystal manufacturing apparatus that can be used in the method of the present disclosure. FIG. 5 is a schematic cross-sectional view showing the positional relationship between the seed crystal substrate and the Si—C solution. FIG. 6 is a schematic cross-sectional view showing the positional relationship between the seed crystal substrate and the Si—C solution. FIG. 7 is a schematic cross-sectional view showing the positional relationship between the seed crystal substrate and the Si—C solution. FIG. 8 is an appearance photograph of the seed crystal substrate used in the example observed from the (000-1) plane. FIG. 9 is an appearance photograph of the grown crystal obtained in the example observed from the side. FIG. 10 is an external view photograph of the grown crystal obtained in the example observed from the growth surface.

  In this specification, “−1” in the notation of the (000-1) plane or the like is a place where “−1” is originally written with a horizontal line on the number.

  FIG. 1 shows a schematic external view of a disc-shaped seed crystal substrate that is generally used for growing a SiC single crystal using a solution method. Conventionally, crystal growth is generally performed in the c-axis direction from the (000-1) plane 15 (also referred to as C plane) using the disc-shaped SiC seed crystal substrate 14 shown in FIG. Has been done.

  However, since there are various polytypes of SiC crystals and there is almost no difference in free energy, 6H, 15R, and the like may grow crystal even when using a SiC seed crystal substrate with a polytype of 4H. It was difficult to stably obtain 4H—SiC single crystals.

  The present inventor has conducted intensive research on a method for stably obtaining a 4H—SiC single crystal. A grown crystal capable of maintaining 4H has a {1-10k} plane (k is an integer of 1 to 4) at the growth end. It has been found that a grown crystal that has 4H and cannot maintain 4H does not have a {1-10k} plane at the growth end.

  The present inventor further used a 4H-SiC single-crystal substrate in which the (000-1) plane and the {1-10k} plane (k is an integer of 1 to 4) around the (000-1) plane are exposed. By using crystals to grow crystals from the (000-1) plane and the {1-10k} plane, it is possible to suppress the generation of polytypes other than 4H and stably grow 4H-SiC single crystals. I found.

  The present disclosure relates to a SiC single crystal in which a SiC single crystal is grown by bringing a seed crystal substrate held on a seed crystal holding shaft into contact with a Si-C solution having a temperature gradient that decreases from the inside toward the liquid surface. In the manufacturing method, the seed crystal substrate is 4H—SiC, and {1-10k} planes (k is an integer of 1 to 4) around the (000-1) plane and the (000-1) plane. And a method for producing a SiC single crystal including crystal growth from a (000-1) plane and a {1-10k} plane.

  In the method of the present disclosure, the (000-1) plane of the seed crystal substrate and the {1-10k} plane (k is an integer of 1 to 4) around the (000-1) plane are used as growth planes. Generation | occurrence | production of polytypes other than 4H can be suppressed, and the 4H rate of the SiC single crystal to grow can be made higher than before.

  FIG. 2 is a schematic cross-sectional view showing a mode of crystal growth from the seed crystal substrate 14 having the (000-1) plane 15 and the {1-10k} plane 16. Although not bound by theory, as shown in FIG. 2, since the {1-10k} plane 16 of the seed crystal substrate 14 is a plane oblique to the (000-1) plane 15, the grown crystal It is considered that the crystal structure of the 4H—SiC seed crystal substrate 14 can be inherited so that the 40-diameter enlarged portion has the {1-10k} plane 16 ′, and the crystal can be grown while maintaining 4H.

  FIG. 3 shows a schematic external view of a seed crystal substrate used in the method of the present disclosure. The seed crystal substrate 14 has a polytype of 4H, has a (000-1) plane 15 (C plane), and further has a {1-10k around the (000-1) plane 15 as shown in FIG. } The surface 16 is provided. By performing crystal growth from the (000-1) plane 15 and the {1-10k} plane 16, the generation of polytypes other than 4H is suppressed, and the 4H rate of the SiC single crystal to be grown is more stable than before. Can be increased. Further, from the viewpoint of increasing the 4H maintenance rate, k on the {1-10k} plane is preferably 1 or 2, and more preferably 2. That is, seed crystal substrate 14 preferably has a {1-101} plane or a {1-102} plane around (000-1) plane, and more preferably has a {1-102} plane.

  According to the method of the present disclosure, a SiC single crystal having a 4H ratio of preferably 80% or more, more preferably 90% or more, and further preferably 100% can be obtained.

  In the method of the present disclosure, a solution method is used. In the solution method, an SiC seed crystal substrate held on the lower end face of the seed crystal holding shaft is brought into contact with an Si—C solution having a temperature gradient that decreases in temperature from the inside (deep part) toward the liquid level (surface), and SiC is added. This is a method for producing a SiC single crystal by growing a single crystal. By forming a temperature gradient in which the temperature decreases from the inside of the Si-C solution toward the surface of the Si-C solution, the surface region of the Si-C solution is supersaturated, and the seed crystal is brought into contact with the Si-C solution. A SiC single crystal can be grown from the substrate.

  The seed crystal substrate used in the method of the present disclosure may be a 4H—SiC single crystal in which the {1-10k} plane is exposed around the (000-1) plane and the (000-1) plane. A single crystal of a quality generally used in the manufacture of can be used as a seed crystal substrate. For example, a SiC single crystal having a (000-1) plane generally prepared by a sublimation method was prepared, and a {1-10k} plane was provided around the (000-1) plane by processing such as mirror polishing. One can be used as a seed crystal substrate.

  As shown in FIG. 3, the seed crystal substrate has a shape in which a {1-10k} surface 16 that is six-fold symmetric is exposed around a substantially hexagonal (000-1) surface 15. All the side surfaces are constituted by {1-10k} planes 16.

  In FIG. 4, an example of the cross-sectional schematic diagram of the SiC single crystal manufacturing apparatus which can be used for the manufacturing method of this indication is shown. The illustrated SiC single crystal manufacturing apparatus 100 includes a crucible 10 containing a Si-C solution 24 in which C is dissolved in a melt of Si or Si / X (X is one or more metals other than Si). The seed crystal substrate 14 held at the tip of the seed crystal holding shaft 12 that forms a temperature gradient that decreases in temperature from the inside of the Si—C solution toward the liquid surface of the solution and that can be moved up and down in the vertical direction is used as the Si—C solution. 24, the SiC single crystal can be grown from the seed crystal substrate 14.

  Contact of the seed crystal substrate 14 with the Si-C solution 24 (hereinafter also referred to as seed touch) causes the seed crystal holding shaft 12 holding the seed crystal substrate 14 to descend toward the liquid surface of the Si-C solution 24, The (000-1) plane 15, which is the lower surface of the seed crystal substrate 14, is brought into contact with the Si—C solution 24 in parallel with the liquid surface of the Si—C solution 24, and The {1-10k} surface 16 can also be formed by bringing it into contact with the Si—C solution 24. The SiC single crystal can be grown by holding the seed crystal substrate 14 at a predetermined position with respect to the liquid surface of the Si—C solution 24.

  As long as the (000-1) plane 15 and the {1-10k} plane 16 of the seed crystal substrate 14 are in contact with the Si—C solution, the holding position of the seed crystal substrate 14 is the lower surface of the seed crystal substrate 14. The position of the (000-1) plane 15 coincides with the liquid level of the Si-C solution 24 as shown in FIG. 5, or is above the liquid level of the Si-C solution 24 as shown in FIG. Alternatively, as shown in FIG. 7, it may be on the lower side with respect to the liquid surface of the Si—C solution 24.

  As shown in FIGS. 5 and 6, the (000-1) plane 15 and the surrounding {1-10k} plane 16 of the seed crystal substrate 14 and the Si—C solution 24 come into contact with each other, so that the seed crystal substrate 14 and Si The SiC single crystal may be grown while forming the meniscus 34 between the -C solution 24.

  As shown in FIGS. 5 and 6, the meniscus refers to a concave curved surface 34 formed on the liquid surface (surface) of the Si—C solution 24 wetted on the seed crystal substrate 14 by surface tension. 5 and 6, the Si—C solution 24 wets not only the (000-1) plane 15 of the seed crystal substrate 14 but also the surrounding {1-10k} plane 16.

  Since the temperature of the meniscus portion formed on the outer peripheral portion of the growth surface is likely to decrease due to radiation heat, the temperature of the Si-C solution in the outer peripheral portion is higher than the central portion immediately below the interface of the crystal growth surface by forming the meniscus. A SiC single crystal having a concave growth surface can be grown by forming a temperature gradient that lowers the temperature. When a SiC single crystal is grown so as to have a concave growth surface, it is possible to grow a high-quality SiC single crystal while suppressing the occurrence of inclusion.

  When the (000-1) plane 15 which is the lower surface of the seed crystal substrate is held at a position above the liquid surface of the Si-C solution 24, the seed crystal is touched and then the lower surface of the seed crystal substrate (000-1). ) It is preferable to hold the surface 15 at a position 0.5 to 3 mm above the liquid surface of the Si—C solution 24. By holding the lower surface of the seed crystal substrate in such a position, the meniscus can be stably formed, and the Si—C solution can be prevented from coming into contact with the seed crystal holding shaft. Occurrence can be prevented.

  Although the position of the (000-1) plane 15 which is the lower surface of the seed crystal substrate 14 may be lower than the liquid level of the Si-C solution 24 as shown in FIG. 7, the generation of polycrystals is prevented. Therefore, it is preferable that the Si—C solution 24 does not contact the seed crystal holding shaft 12.

  In the method of the present disclosure, the Si—C solution 24 refers to a solution in which C is dissolved using a melt of Si or Si / X (X is one or more metals other than Si) as a solvent. X is one or more kinds of metals, and is not particularly limited as long as it can form a liquid phase (solution) in thermodynamic equilibrium with SiC (solid phase). Examples of suitable metals X include Ti, Mn, Cr, Ni, Ce, Co, V, Fe and the like.

  The Si—C solution 24 is preferably an Si—C solution using a melt of Si / Cr / X (X is one or more metals other than Si and Cr) as a solvent. Si- with a melt of 30 to 80, Cr of 20 to 60, and X of 0 to 10 (Si: Cr: X = 30 to 80:20 to 60: 0 to 10) in atomic composition percentage as a solvent The C solution is more preferable because the variation in the dissolved amount of C is small. For example, in addition to Si, Cr, Ni, or the like can be charged into the crucible to form a Si—Cr solution, a Si—Cr—Ni solution, or the like.

  The Si-C solution 24 is prepared by charging a raw material into a crucible and dissolving C in a melt of Si or Si / X prepared by heating and melting. By making the crucible 10 a carbonaceous crucible such as a graphite crucible or a SiC crucible, C is dissolved in the melt by melting the crucible 10, and an Si—C solution 24 can be formed. In this way, undissolved C does not exist in the Si—C solution 24, and waste of SiC due to precipitation of the SiC single crystal in the undissolved C can be prevented. The supply of C may be performed by, for example, a method of injecting hydrocarbon gas or charging a solid C supply source together with the melt raw material, or combining these methods with melting of a crucible. Also good.

  The temperature of the Si-C solution 24 usually has a temperature distribution in which the temperature of the liquid surface is lower than the inside of the Si-C solution 24 due to radiation or the like. By adjusting the positional relationship with the crucible 10 in the height direction and the output of the high-frequency coil 22, the upper part of the solution where the seed crystal substrate 14 contacts the Si—C solution 24 becomes low temperature, and the lower part (inside) of the solution becomes high temperature. Thus, a temperature gradient in the vertical direction can be formed on the liquid surface of the Si—C solution 24. For example, the output of the upper coil 22A can be made smaller than the output of the lower coil 22B, and a temperature gradient can be formed in the Si—C solution 24 such that the upper part of the solution is cold and the lower part of the solution is hot. The temperature gradient can be 10 to 50 ° C./cm, for example, when the depth of the solution from the liquid surface is approximately 1 cm.

  C dissolved in the Si-C solution 24 is dispersed by diffusion and convection. The vicinity of the lower surface of the seed crystal substrate 14 is more than the inside of the Si—C solution 24 due to output control of the heating device, heat radiation from the liquid surface of the Si—C solution 24, heat removal through the seed crystal holding shaft 12, and the like. A temperature gradient can be formed that results in a low temperature. When C dissolved in the solution having high solubility at high temperature reaches the vicinity of the seed crystal substrate having low solubility at low temperature, a supersaturated state is reached, and SiC crystals can be grown on the seed crystal substrate 14 using this supersaturation as a driving force. .

  The liquid surface (surface) temperature of the Si—C solution 24 is preferably 1800 to 2200 ° C. with little variation in the amount of C dissolved in the Si—C solution.

  The temperature measurement of the Si—C solution 24 can be performed using a thermocouple, a radiation thermometer, or the like. Regarding the thermocouple, from the viewpoint of high temperature measurement and prevention of impurity contamination, a thermocouple in which a tungsten-rhenium strand coated with zirconia or magnesia glass is placed in a graphite protective tube is preferable.

  The 4H ratio in the grown crystal can be measured by performing Raman spectroscopic analysis on the growth surface of the grown crystal. A specific example of the procedure for measuring the 4H rate will be described in the examples described later.

  The crucible 10 is preferably a carbonaceous crucible such as a graphite crucible or a SiC crucible. The crucible is preferably cylindrical. The inner diameter of the crucible can be appropriately set according to the size of the single crystal manufacturing apparatus to be used, and can be set to 30 to 200 mm, 40 to 120 mm, or the like, for example.

  The seed crystal substrate 14 can be installed in the single crystal manufacturing apparatus 100 by holding the upper surface of the seed crystal substrate 14 on the seed crystal holding shaft 12. A carbon adhesive can be used for holding the seed crystal substrate 14 on the seed crystal holding shaft 12.

  The seed crystal holding shaft 12 is an axis that holds the seed crystal substrate 14 on its end face, can be a graphite shaft, and can have any shape such as a columnar shape or a prismatic shape.

  In order to keep warm, the outer periphery of the crucible 10 is covered with a heat insulating material 18. The crucibles 10 covered with the heat insulating material 18 are collectively accommodated in the quartz tube 26. On the outer periphery of the quartz tube 26, a high frequency coil 22 is disposed as a heating device. The high frequency coil 22 may be composed of an upper coil 22A and a lower coil 22B, and the upper coil 22A and the lower coil 22B can be independently controlled.

  Since the crucible 10, the heat insulating material 18, the quartz tube 26, and the high frequency coil 22 become high temperature, they are disposed inside the water cooling chamber. The water cooling chamber includes a gas introduction port and a gas exhaust port in order to enable adjustment of the atmosphere in the apparatus.

  Calculation of the 4H ratio in the following examples and comparative examples was performed by the following method.

  The growth surface of the grown crystal was equally divided into 1 mm intervals, and Raman spectroscopic analysis (manufactured by Photon Design, PLIS-200TS) was performed on the approximate center of each section. The analysis conditions are as follows: excitation wavelength of 532 nm, 20 mW, laser irradiation diameter of 2.7 μm, backscattering arrangement, exposure time of 2 seconds, number of integrations, diffraction grating of 1600 gr / mm, confocal hole diameter of 10 μm, room temperature, in the air.

  When all the sections of the growth surface analyzed by Raman spectroscopy were 4H, the grown crystal was determined to be 4H—SiC. The determination of whether each block is 4H was determined to be 4H if a Raman peak of only 4H was obtained, and was determined not to be 4H if a Raman peak other than 4H was observed. In each example and comparative example, a plurality of grown crystals were obtained under the same conditions to obtain a plurality of grown crystals, and the growth surfaces of the plurality of grown crystals were analyzed by Raman spectroscopy, and determined to be 4H-SiC. The ratio of the number of grown crystals to the number of the plurality of grown crystals was 4H rate. That is, the 4H rate is 100%, for example, when 10 growth crystals, all the sections of each growth surface of 10 growth crystals are determined to be 4H-SiC, and the 4H rate is 50%. For example, among the 10 grown crystals, all the sections on the growth surface of each of the 5 grown crystals are determined to be 4H—SiC, and the remaining 5 grown crystals are not determined to be 4H—SiC. When at least one of all the sections of the growth surface was not determined to be 4H—SiC, it was determined that the grown crystal was not 4H—SiC.

Example 1
A SiC single crystal having a diameter of 50.8 mm and a thickness of 700 μm, which is a disc-shaped 4H—SiC single crystal and having a lower surface having a (000-1) plane, is prepared. A 6-fold symmetrical {1-102} plane is formed by mirror polishing around the (000-1) plane so that the diagonal is 50.0 mm, and a seed crystal substrate having a shape as shown in FIG. 3 is produced. did. FIG. 8 shows a photograph of the appearance of the seed crystal substrate observed from the (000-1) plane.

  A cylindrical graphite seed crystal holding shaft 12 having a diameter of 12.7 mm was prepared. The upper surface of the seed crystal substrate 14 was bonded to the substantially central portion of the end surface of the seed crystal holding shaft 12 using a graphite adhesive so that the lower surface of the seed crystal substrate 14 became the (000-1) plane.

  Using the single crystal manufacturing apparatus shown in FIG. 4, Si, Cr, and Ni are added to a graphite crucible having an inner diameter of 100 mm at an atomic composition ratio of Si: Cr: Ni = 55: 40: 5 (at%). The melt was prepared as a raw material for forming a solution.

The inside of the single crystal manufacturing apparatus was evacuated to 1 × 10 ⁻³ Pa, and then argon gas was introduced until the pressure became 1 atm. The air inside the single crystal manufacturing apparatus was replaced with argon. The raw material in the graphite crucible was melted by energizing and heating the high frequency coil to form a Si / Cr / Ni alloy melt. Then, a sufficient amount of C was dissolved in the melt of the Si / Cr / Ni alloy from the graphite crucible to form a Si—C solution.

  The graphite crucible 10 was heated by adjusting the outputs of the upper coil 22A and the lower coil 22B to form a temperature gradient in which the temperature decreased from the inside of the Si—C solution 24 toward the solution surface. Confirmation that the predetermined temperature gradient was formed was performed by measuring the temperature of the Si-C solution 24 using a thermocouple capable of moving up and down. By controlling the output of the high-frequency coils 22A and 22B, the temperature at the liquid level of the Si-C solution 24 is raised to 1950 ° C., and the temperature is lowered from the inside of the solution toward the liquid level of the solution within a range of 1 cm from the liquid level of the solution. The output of the high-frequency coil 22 was adjusted so that the temperature gradient to be performed was 20 ° C./cm.

  The seed crystal holding shaft 12 is moved vertically downward so that the (000-1) plane, which is the lower surface of the seed crystal substrate bonded to the seed crystal holding shaft 12, is kept parallel to the Si-C solution surface. The seed touch was performed so that the entire {1-102} plane around the (000-1) plane was brought into contact with the Si-C solution 24. Immediately after the seed touch, the graphite axis is pulled upward in the vertical direction so that the position of the (000-1) plane, which is the lower surface of the seed crystal substrate, is positioned 2.0 mm above the liquid level of the Si—C solution. A meniscus having a shape as shown in FIG. 6 was formed. A SiC single crystal was grown by holding for 40 hours while forming a meniscus at a position where it was lifted by 2.0 mm.

  After the completion of the crystal growth, the seed crystal holding shaft 12 was raised, and the SiC single crystal grown from the seed crystal substrate 14 and the seed crystal substrate was separated from the Si—C solution 24 and the seed crystal holding shaft 12 and recovered. 9 and 10 show external appearance photographs of the grown crystal observed from the side surface and the growth surface. The growth thickness of the grown crystal was 4.4 mm. Next, crystal growth was performed 9 times under the same conditions, and a total of 10 grown crystals were obtained.

  When the polytype of the grown crystal was examined by Raman spectroscopic analysis, the 4H ratio of the 10 grown crystals obtained was 100%. The 4H rate was calculated using the method described above.

(Comparative Example 1)
A SiC single crystal is grown under the same conditions as in Example 1 except that a disc-shaped SiC single crystal having a shape shown in FIG. And recovered. The growth thickness of the grown crystal was 4.3 mm.

  When the polytype of the grown crystal was examined by Raman spectroscopic analysis, the 4H ratio of the 10 grown crystals obtained was 40%.

DESCRIPTION OF SYMBOLS 100 Single crystal manufacturing apparatus 10 Crucible 12 Seed crystal holding shaft 14 Seed crystal substrate 15 (000-1) surface 16 (1-10k) surface of seed crystal substrate 16 '(1-10k) surface of grown crystal 18 Heat insulating material 22 High frequency Coil 22A Upper high frequency coil 22B Lower high frequency coil 24 Si-C solution 26 Quartz tube 34 Meniscus 40 Growth crystal

Claims (2)

A SiC single crystal manufacturing method in which a SiC single crystal is grown by bringing a seed crystal substrate held on a seed crystal holding shaft into contact with a Si-C solution having a temperature gradient that decreases from the inside toward the liquid surface. And
The seed crystal substrate is 4H—SiC, and has a (000-1) plane and a {1-10k} plane (k is an integer of 1 to 4) around the (000-1) plane; and Crystal growth from the (000-1) plane and the {1-10k} plane;
The manufacturing method of the SiC single crystal containing this.   The method for producing a SiC single crystal according to claim 1, wherein the {1-10k} plane is a {1-102} plane.