JP2018043898A - PRODUCING METHOD OF SiC SINGLE CRYSTAL - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a SiC single crystal producing method capable of reducing a void density in a SiC single crystal to be grown, even if a melt back is performed.SOLUTION: A SiC single crystal producing method for growing a SiC single crystal by bringing a seed crystal substrate into contact with a Si-C solution introduced into a crucible and having a temperature gradient lowering from the inside to a liquid level, resides: in that a material poured into a crucible is heated to form a Si solution by using a heater arranged around the crucible; in that melt back of the seed crystal substrate is performed by dipping the seed crystal substrate in the Si-C solution of an unsaturated carbon state, after the lapse of 47 minutes after the formation of the Si solution; and in that the SiC single crystal is grown from the seed crystal substrate after the melt back.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a method for producing a SiC single crystal.

  SiC single crystals are very thermally and chemically stable, excellent in mechanical strength, resistant to radiation, and have excellent physical properties such as higher breakdown voltage and higher thermal conductivity than Si single crystals. . Therefore, it is possible to realize high power, high frequency, withstand voltage, environmental resistance, etc. that cannot be realized with existing semiconductor materials such as Si single crystal and GaAs single crystal, and power devices that enable high power control and energy saving. Expectations are growing as next-generation semiconductor materials in a wide range of materials, high-speed and large-capacity information communication device materials, in-vehicle high-temperature device materials, radiation-resistant device materials and the like.

  Conventionally, as a method for growing a SiC single crystal, a gas phase method, an Acheson method, and a solution method are typically known. Among the vapor phase methods, for example, the sublimation method has defects such as a hollow through-hole defect called a micropipe defect and a lattice defect such as a stacking defect, which has been disadvantageous in the grown single crystal. Most of these are manufactured by a sublimation method, and attempts have been made to reduce defects in the grown crystal. In the Atchison method, since silica and coke are used as raw materials and heated in an electric furnace, it is impossible to obtain a single crystal with high crystallinity due to impurities in the raw materials.

  In the solution method, a Si melt formed by melting a Si melt or a metal other than Si in a graphite crucible, C is dissolved in the melt, and a SiC crystal layer is formed on a seed crystal substrate placed in a low temperature portion. It is a method of growing by precipitation. Since the crystal growth is performed in the solution method in a state close to thermal equilibrium as compared with the gas phase method, it can be expected to reduce defects. For this reason, several methods for producing SiC single crystals by the solution method have recently been proposed (Patent Document 1).

International Publication No. 2011/007458

  Patent Document 1 proposes a method for preventing defects caused by seed touch by bringing a SiC seed crystal substrate into contact with an Si melt in which C (carbon) is unsaturated and performing meltback. . However, in the prior art such as Patent Document 1, it has been found that even if meltback is performed to prevent generation of defects due to seed touch, voids can be generated in the grown SiC single crystal.

  Therefore, there is a demand for a method for producing a SiC single crystal that can reduce the void density in the grown SiC single crystal even when meltback is performed.

The present disclosure relates to manufacturing a SiC single crystal in which a SiC single crystal is grown by bringing a seed crystal substrate into contact with a Si-C solution having a temperature gradient that decreases in temperature from the inside toward the liquid surface. A method,
Using a heating device arranged around the crucible, heating the raw material charged into the crucible to form a Si melt,
The Si melt is further heated to form a Si-C solution, and after the elapse of 47 minutes or more from the formation of the Si melt, the seed crystal substrate is allowed to land on the Si-C solution in an unsaturated carbon state. Performing a meltback of the seed crystal substrate, and, after performing the meltback, growing a SiC single crystal from the seed crystal substrate,
The manufacturing method of the SiC single crystal containing is included.

  According to the method of the present disclosure, it is possible to reduce the void density in the grown SiC single crystal even when meltback is performed.

FIG. 1 is a graph illustrating an example of a temperature rise profile of the method of the present disclosure. FIG. 2 is a schematic cross-sectional view illustrating an example of a single crystal manufacturing apparatus that can be used in the method of the present disclosure. FIG. 3 is a photomicrograph of the grown crystal obtained in the example observed from the growth surface. FIG. 4 is a photomicrograph of the grown crystal obtained in the comparative example observed from the growth surface.

  In this specification, “−1” in the notation of the (000-1) plane or the like is a place where “−1” is originally written with a horizontal line on the number.

  Conventionally, when performing meltback, the raw material in the crucible is heated and melted to form an Si melt, and the Si melt is heated to dissolve C to form an Si-C solution. Usually, the seed crystal substrate is deposited on the Si—C solution (hereinafter also referred to as seed touch). However, immediately after the Si melt is formed, gas bubbles are present in the Si melt. If the seed touch is performed immediately after the Si melt is formed, the gas growth is performed in the subsequent crystal growth process. It was found that bubbles were taken into the growing crystal. In particular, when the meltback thickness is increased, the seed touch is performed in a relatively short time after the Si melt is formed, so that it has also been found that the amount of gas taken into the grown crystal increases.

  The inventor has conducted intensive research on a method for producing a SiC single crystal that can reduce the void density even when meltback is performed or the thickness of the meltback is increased. As a result, after the raw material in the crucible was melted to form a Si melt and allowed to elapse for a predetermined time, the seed crystal substrate was deposited in a Si-C solution in which carbon was not saturated. It has been found that if meltback is performed and then crystal growth is performed, the void density in the grown crystal can be reduced even if the meltback is performed or the meltback thickness is increased.

  The present disclosure relates to manufacturing a SiC single crystal in which a SiC single crystal is grown by bringing a seed crystal substrate into contact with a Si-C solution having a temperature gradient that decreases in temperature from the inside toward the liquid surface. In this method, using a heating device arranged around the crucible, the raw material charged in the crucible is heated to form a Si melt, and the Si melt is further heated to form a Si-C solution. And after 47 minutes or more have elapsed from the formation of the Si melt, the seed crystal substrate is deposited on a Si-C solution in which carbon is unsaturated, and the seed crystal substrate is melted back; and The present invention is directed to a method for producing a SiC single crystal including growing a SiC single crystal from a seed crystal substrate after performing meltback.

  In the method of the present disclosure, after the elapse of 47 minutes or more from the formation of the Si melt, the seed crystal substrate is placed in a Si-C solution in which carbon is unsaturated, and the seed crystal substrate is melt-backed. Then, a SiC single crystal is grown from the crystal substrate. According to the method of the present disclosure, the void density in the grown crystal can be reduced regardless of whether the meltback is performed or the thickness of the meltback is increased.

  Melt back means that the surface layer of the seed crystal substrate is removed by dissolving in a Si-C solution. The meltback thickness, that is, the thickness for dissolving the surface layer of the seed crystal substrate varies depending on the processing state of the surface of the seed crystal substrate, but is preferably 20 μm or more in order to sufficiently remove the work-affected layer and the natural oxide film. Preferably it is 40 micrometers or more, More preferably, it is 80 micrometers or more.

  A void is a gap in a SiC single crystal to be grown. Voids are considered to be generated when fine bubbles of gas (gas) contained in the Si-C solution are taken into the grown crystal.

  The void density in the grown crystal can be measured by observing the grown crystal with a microscope from the growth surface or the like.

The void density in the SiC single crystal to be grown is preferably 0.1 piece / cm ² or less, more preferably 0.0 piece cm ² .

  The open pores on the inner wall surface of the crucible and the closed pores near the inner wall contain gas, but the gas in the open pores and in the closed pores dissolves C (carbon) in the Si melt and the Si melt. It is thought that it is taken in by the formed Si-C solution.

  Regarding the gas in the closed pores near the inner wall of the crucible, when the crucible is heated and the C component of the crucible melts into the Si melt to form a Si-C solution, It is believed that it can be incorporated into the C solution.

  The ratio of the gas taken into the Si—C solution to the total amount of the gas is considered to be mostly from the open pores, and the amount of the gas from the closed pores is relatively small.

  The method of the present disclosure uses a solution method in which an SiC single crystal is grown by bringing a seed crystal substrate into contact with a Si-C solution having a temperature gradient that decreases in temperature from the inside toward the liquid surface. .

  In the solution method, an SiC seed crystal substrate is brought into contact with an Si—C solution having a temperature gradient that decreases in the direction perpendicular to the liquid surface from the inside (deep part) to the liquid surface (surface), and SiC is obtained. Single crystals can be grown. By forming a temperature gradient in which the temperature decreases from the inside of the Si-C solution toward the liquid surface, the surface region of the Si-C solution is supersaturated, and the seed crystal substrate brought into contact with the Si-C solution is used as a base point. A SiC single crystal can be grown.

  In the method of the present disclosure, the raw material charged in the crucible is heated using a heating device disposed around the crucible to form a Si melt.

  In the present application, the Si melt refers to a melt of Si or Si / X (X is one or more metals other than Si). The Si—C solution refers to a solution in which C is dissolved using a melt of Si or Si / X (X is one or more metals other than Si) as a solvent. X is one or more kinds of metals, and is not particularly limited as long as it can form a liquid phase (solution) in thermodynamic equilibrium with SiC (solid phase). Examples of suitable metals X include Ti, Mn, Cr, Ni, Ce, Co, V, Fe and the like.

  In the present application, the formation of the Si melt refers to the time when the raw material in the crucible is heated and all the raw material is melted.

  The Si-C solution is prepared by charging a raw material into a crucible and dissolving C in a Si or Si / X melt prepared by heating and melting. By making the crucible a carbonaceous crucible such as a graphite crucible or an SiC crucible, C is dissolved in the melt by melting the crucible, and an Si-C solution can be formed. In this way, undissolved C does not exist in the Si—C solution, and SiC can be prevented from being wasted due to precipitation of the SiC single crystal in the undissolved C. The supply of C may be performed by, for example, a method of injecting hydrocarbon gas or charging a solid C supply source together with the melt raw material, or combining these methods with melting of a crucible. Also good. In the present application, the Si—C solution refers to a Si melt in which C is dissolved regardless of the amount of C dissolved and the degree of saturation.

  As the Si—C solution, a Si—C solution using a melt of Si / Cr / X (X is one or more metals other than Si and Cr) as a solvent is preferable because the amount of C dissolved can be increased. Furthermore, the Si-C solution which uses the melt of Si: Cr: X = 30-80: 20-60: 0-10 by the atomic composition percentage as a solvent is preferable. For example, in addition to Si, Cr, Ni, or the like can be charged into the crucible to form a Si—Cr solution, a Si—Cr—Ni solution, or the like.

  The size of the crucible is not particularly limited. For example, the inner diameter may be 70 to 120 mm, the wall thickness may be 10 to 25 mm, and the depth from the crucible bottom inner wall to the crucible top may be 30 to 50 mm.

  The heating device can be a high frequency coil or a graphite heater. A heating device such as a high-frequency coil is arranged around the side surface of the crucible, and the raw material charged in the crucible can be heated to form a Si melt.

  In the method of the present disclosure, the Si melt is further heated to form a Si-C solution, and after 47 minutes or more have elapsed since the formation of the Si melt, the seed crystal substrate is made into Si-unsaturated carbon. The seed crystal substrate is melt-backed by landing on the -C solution.

  In FIG. 1, the graph showing an example of the temperature rising profile of the method of this indication is shown. FIG. 1 shows a temperature rise profile of the temperature of the outer wall of the crucible bottom. When the raw material in the crucible is heated at a predetermined rate of temperature rise, the raw material starts to melt and the temperature becomes substantially constant. Thereafter, when all the raw materials are melted to form the Si melt, the temperature starts to rise again. Based on the time point of disclosure of this temperature rise, after time t has passed, seed touch is performed for landing the seed crystal substrate on the Si-C solution.

  During the passage of 47 minutes or more after the formation of the Si melt, C dissolves in the Si melt to form a Si—C solution. During that time, gas is released from the surface of the Si—C solution. You can get out. Therefore, after 47 minutes or more have passed since the formation of the Si melt, and preferably after 87 minutes or more, the seed crystal substrate is deposited in an Si-C solution in which carbon is unsaturated, thereby seed crystals. The substrate can be melted back, and thereafter crystal growth can be performed while suppressing the generation of voids. If gas bubbles are included in the Si—C solution, the gas bubbles adhere to the seed crystal substrate that has been deposited, and the gas cannot escape from the liquid surface of the Si—C solution. Therefore, it is effective to let the gas escape from the surface of the Si-C solution before the seed crystal substrate is deposited.

  The Si melt is formed at about 1400 to 1500 ° C., depending on the composition. Whether the Si melt has been formed can be determined by measuring the temperature of the crucible bottom outer wall while heating the raw material in the crucible. Until the raw material in the crucible is heated and the Si melt is formed, the temperature of the outer wall of the crucible bottom increases, but when the raw material starts to melt, the temperature of the outer wall of the crucible bottom becomes constant and all the raw material is melted. When the Si melt is formed, the temperature of the crucible bottom outer wall begins to rise again. It is determined that the Si melt is formed when the temperature of the outer wall of the crucible bottom begins to rise from a constant state.

  Preferably, heating is continued so that the temperature of the Si melt or Si—C solution continues to rise during the period from the formation of the Si melt to the seed touch. The heating rate is preferably 3 to 12 ° C./min. As a result, it is possible to allow 47 minutes or more to pass while the C of the Si—C solution remains unsaturated, and more reliably suppress the growth of crystals from the seed crystal substrate immediately after the seed touch, thereby preventing the meltback. You can start immediately. Furthermore, since the C content in the Si-C solution can be increased, crystal growth can be performed immediately after seed-touching and performing meltback. In addition, when heating is continued so that the temperature of the Si melt or Si-C solution continues to rise, the inner wall of the crucible melts and C melts out, which can occur when the temperature is raised to the crystal growth temperature. The gas in the closed pores can also escape from the liquid surface of the Si—C solution.

  Preferably, heating is continued so that the temperature of the Si-C solution continues to rise after the seed touch. The heating rate is preferably 2 to 8 ° C./min. As a result, the meltback can be stably continued even after the seed touch and the C is kept in an unsaturated state more reliably. Further, the meltback thickness of the seed crystal substrate is increased or the meltback is increased. Can be performed in a shorter time.

  The meltback can be performed by bringing C in the surface region of the Si—C solution directly under the seed crystal substrate into an unsaturated state. In order to bring the C in the surface region of the Si—C solution into an unsaturated state, the temperature of the surface region of the Si—C solution is continuously increased, or the surface region of the Si—C solution is directed from the inside toward the liquid level of the solution. Thus, a temperature gradient in which the temperature increases, that is, a temperature gradient in the direction opposite to the SiC single crystal growth can be formed in the Si—C solution. The temperature of the Si-C solution may be continuously increased by a heating device such as a high-frequency coil arranged around the crucible, or the reverse temperature gradient may be formed by controlling the output of the high-frequency coil. Good.

  The meltback time, that is, the time from the seed touch to the end of the meltback may be adjusted according to the meltback thickness, and can be, for example, 5 to 30 minutes.

  In the method of the present disclosure, a SiC single crystal is grown from a seed crystal substrate after performing meltback. A SiC single crystal can be grown from the seed crystal substrate by forming a vertical temperature gradient in which the temperature decreases from the inside (deep part) of the Si—C solution toward the liquid surface. A SiC single crystal can be grown from a seed crystal substrate by supersaturating the amount of C dissolved in the surface region of the Si-C solution.

  FIG. 2 shows an example of an SiC single crystal manufacturing apparatus that can implement the method of the present disclosure. The illustrated SiC single crystal manufacturing apparatus 100 includes a crucible 10 containing a Si-C solution 24 in which C is dissolved in a Si or Si / X melt, and is attached to the tip of a seed crystal holding shaft 12 that can be raised and lowered. The held seed crystal substrate 14 can be maintained in contact with the Si-C solution 24, and a temperature gradient is formed in which the temperature decreases from the inside of the Si-C solution toward the liquid surface of the solution, thereby forming a seed crystal. A SiC single crystal can be grown from the substrate 14.

  As a seed crystal substrate that can be used in the method of the present disclosure, for example, a SiC single crystal generally created by a sublimation method can be used. The overall shape of the seed crystal substrate can be any shape such as a plate shape, a disk shape, a columnar shape, a prism shape, a truncated cone shape, or a truncated pyramid shape.

  The seed crystal holding shaft 12 can hold the seed crystal substrate 14 by adhering the upper surface of the seed crystal substrate 14 to the lower end surface of the seed crystal holding shaft 12 using an adhesive or the like.

  The diameter of the SiC grown single crystal obtained by the method of the present disclosure is preferably 50 mm or more. According to the method of the present disclosure, it is possible to obtain an SiC single crystal with a void density reduced over the entire diameter range.

  The growth thickness of the SiC grown single crystal obtained by the method of the present disclosure is preferably 5 mm or more. According to the method of the present disclosure, it is possible to obtain a SiC single crystal with a reduced void density over the entire thickness range.

  The liquid surface (surface) temperature of the Si—C solution for crystal growth is preferably 1800 to 2200 ° C. with little variation in the amount of C dissolved in the Si—C solution.

  The temperature of the crucible bottom outer wall can be measured using a radiation thermometer. Temperature measurement of the liquid surface (surface) and surface region of the Si—C solution can be performed using a thermocouple, a radiation thermometer, or the like. Regarding the thermocouple, from the viewpoint of high temperature measurement and prevention of impurity contamination, a thermocouple in which a tungsten-rhenium strand coated with zirconia or magnesia glass is placed in a graphite protective tube is preferable.

  In order to keep warm, the outer periphery of the crucible 10 is covered with a heat insulating material 18. These are collectively accommodated in the quartz tube 26. A high-frequency coil 22 is disposed on the outer periphery of the quartz tube 26 as a heating device. The high frequency coil 22 may be composed of an upper coil 22A and a lower coil 22B, and the upper coil 22A and the lower coil 22B can be independently controlled.

  Since the crucible 10, the heat insulating material 18, the quartz tube 26, and the high frequency coil 22 become high temperature, they are disposed inside the water cooling chamber. The water cooling chamber includes a gas introduction port and a gas exhaust port in order to enable adjustment of the atmosphere in the apparatus.

  When crystal growth is performed, the seed crystal substrate 14 is formed in the Si-C solution 24 by adjusting the number and interval of the high-frequency coil 22, the positional relationship in the height direction between the high-frequency coil 22 and the crucible 10, and the output of the high-frequency coil. A temperature gradient in the vertical direction can be formed on the liquid surface of the Si-C solution 24 so that the upper part of the solution in contact with the solution is at a low temperature and the lower part of the solution (inside) is at a high temperature. For example, the output of the upper coil 22A can be made smaller than the output of the lower coil 22B, and a temperature gradient can be formed in the Si—C solution 24 such that the upper part of the solution is cold and the lower part of the solution is hot. The temperature gradient can be 10 to 50 ° C./cm, for example, when the depth of the solution from the liquid surface is approximately 1 cm.

  C dissolved in the Si-C solution 24 is dispersed by diffusion and convection. When C dissolved in the solution having high solubility at high temperature reaches the vicinity of the seed crystal substrate having low solubility at low temperature, a supersaturated state is reached, and SiC crystals can be grown on the seed crystal substrate 14 using this supersaturation as a driving force. .

Example 1
A SiC single crystal having a diameter of 50.8 mm and a thickness of 0.5 mm, which is a disc-shaped 4H—SiC single crystal and having a lower surface having a (000-1) plane, is prepared. Used as.

  A cylindrical graphite shaft having a diameter of 12 mm and a length of 20 cm was prepared as a seed crystal holding shaft 12.

  The upper surface of the prepared seed crystal substrate 14 was bonded to the end surface of the seed crystal holding shaft 12 using a carbon adhesive.

  Using a single crystal production apparatus 100 shown in FIG. 2, Si / Cr / Ni is charged into a graphite crucible 10 having an inner diameter of 100 mm as a melt raw material at an atomic composition percentage of Si: Cr: Ni = 55: 40: 5. It is.

  The air inside the single crystal manufacturing apparatus 100 was replaced with argon. The high-frequency coil 22 disposed around the graphite crucible 10 was energized, and the raw material in the graphite crucible 10 was heated by heating. The temperature of the raw material was measured as the temperature of the crucible bottom outer wall. The temperature of the crucible bottom outer wall was measured using a radiation thermometer.

  Heat until the temperature of the outer wall of the crucible bottom increases at about 40 ° C./min until the raw material starts to melt, and then continue to heat the Si melt (Si / Cr / Ni alloy melt). Formed. When the temperature of the crucible bottom outer wall became constant, it was judged that the melting of the raw material started, and when the temperature of the crucible bottom outer wall started to rise from a constant state, it was judged that the Si melt was formed. The temperature of the outer wall of the crucible bottom when the Si melt was formed was 1400 ° C.

  Even after the Si melt is formed, heating is continued so that the temperature of the bottom outer wall of the crucible 10 is increased at about 10 ° C./min, and C is dissolved in the Si melt from the graphite crucible 10 to obtain an Si—C solution. 24 was formed. 47 minutes after forming the Si melt, the lower surface of the seed crystal substrate 14 adhered to the seed crystal holding shaft 12 is made parallel to the liquid surface of the Si-C solution 24, and the position of the lower surface of the seed crystal substrate 14 is A seed that is arranged at a position that coincides with the liquid surface of the Si-C solution 24 and that contacts the lower surface of the seed crystal substrate 14 with the Si-C solution 24 so that the Si-C solution does not come into contact with the seed crystal holding shaft. Touched. The temperature of the bottom outer wall of the crucible 10 when the lower surface of the seed crystal substrate was brought into contact with the Si—C solution 24 was 1935 ° C.

  Even after the lower surface of the seed crystal substrate was brought into contact with the Si—C solution, heating was continued so that the temperature of the outer wall of the crucible bottom portion was increased at about 8 ° C./min, and meltback was performed. The meltback thickness was 87 μm.

  After performing the meltback, the output of the upper coil 22A and the lower coil 22B was adjusted to form a temperature gradient in which the temperature decreased from the inside of the Si—C solution 24 toward the liquid surface. Confirmation that the predetermined temperature gradient was formed was performed by measuring the temperature of the Si-C solution 24 using a thermocouple capable of moving up and down. The temperature at the liquid surface of the Si—C solution 24 was set to 2000 ° C. by the output control of the high frequency coils 22A and 22B. The temperature of the liquid level of the Si-C solution with the liquid level of the Si-C solution being the low temperature side, and the temperature at a position of a depth of 1 cm in the vertical direction from the liquid level of the Si-C solution 24 toward the inside of the solution. The difference was 25 ° C. This state was maintained for 10 hours to grow a crystal.

Next, the temperature in the crucible was cooled to room temperature, and the seed crystal substrate 14 and the grown crystal were separated from the seed crystal holding shaft 12 and collected. The obtained grown crystal had a diameter of 52 mm and a thickness of 2.3 mm. The diameter of the obtained growth crystal is the diameter of the growth surface. The obtained grown crystal was observed from the growth surface with a microscope, and the void density was measured. The void density was 0.1 / cm ² .

(Example 2)
The crucible bottom outer wall is heated at a temperature of about 40 ° C./min until the raw material begins to melt, and after 87 minutes from forming the Si melt at 1439 ° C., the crucible bottom outer wall temperature is 1963 ° C. Except that the seed touch was performed at this time, meltback and crystal growth were performed in the same manner as in Example 1, and the grown crystals were recovered. The meltback thickness was 83 μm, and the void density was 0.0 pieces / cm ² . FIG. 3 shows a photomicrograph of the obtained grown crystal observed from the growth surface.

(Comparative Example 1)
The crucible bottom outer wall is heated at a temperature of about 40 ° C./min until the raw material starts to melt, and after forming the Si melt at 1412 ° C., the crucible bottom outer wall temperature is 1932 ° C. Except for occasionally performing seed touch, meltback and crystal growth were performed in the same manner as in Example 1, and the grown crystals were recovered. The meltback thickness was 105 μm and the void density was 0.5 / cm ² . FIG. 4 shows a micrograph obtained by observing the obtained grown crystal from the growth surface.

Table 1 shows the time from formation of the Si melt to seed touch, meltback thickness, and void density in Examples 1 and 2 and Comparative Example 1.

DESCRIPTION OF SYMBOLS 100 Single crystal manufacturing apparatus 10 Crucible 12 Seed crystal holding shaft 14 Seed crystal substrate 18 Heat insulating material 22 High frequency coil 22A Upper high frequency coil 22B Lower high frequency coil 24 Si-C solution 26 Quartz tube

Claims (1)

A method for producing a SiC single crystal, wherein a seed crystal substrate is brought into contact with a Si-C solution having a temperature gradient that decreases in temperature from the inside toward the liquid surface, and the SiC single crystal is grown by crystal growth. ,
Using a heating device arranged around the crucible, heating the raw material charged into the crucible to form a Si melt;
The Si melt is further heated to form a Si-C solution, and 47 minutes or more after the formation of the Si melt, the seed crystal substrate is changed to the Si-C solution in a carbon-unsaturated state. Making the seeded solution melt-back the seed crystal substrate, and after performing the melt-back, growing a SiC single crystal from the seed crystal substrate,
The manufacturing method of the SiC single crystal containing this.