JP2018046476A - Piezoelectric vibration device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device having a sandwich structure, in which the device is able to avoid a connection failure resulting from deposition of plated metal.SOLUTION: In a crystal oscillator 101, a crystal diaphragm 2 in which a first excitation electrode and a second excitation electrode are formed, a first sealing member 3 for covering the first excitation electrode of the crystal diaphragm 2, and a second sealing member 4 for covering the second excitation electrode of the crystal diaphragm 2 are joined, and an internal space 13 hermetically sealing the vibration part of the crystal diaphragm 2 including the first excitation electrode and the second excitation electrode is formed. Joint materials 15a, 15b for hermetically sealing the vibration part of the crystal diaphragm 2, joint materials 16a to 16d, 17a to 17d provided on the respective outer periphery sides of the joint materials 15a, 15b, respectively, and joint materials 15c, 15d annularly formed on the further outer peripheral side from the joint materials 16a to 16d, 17a to 17d, respectively, are formed between the first sealing member 3 and the crystal diaphragm 2, and between the crystal diaphragm 2 and the second sealing member 4.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a piezoelectric vibration device.

  In recent years, the operating frequency of various electronic devices has been increased, and the size of packages has been reduced (especially low profile). For this reason, piezoelectric vibration devices (for example, crystal resonators, crystal oscillators, etc.) are also required to respond to higher frequencies and smaller packages with higher frequencies and smaller packages.

  In this type of piezoelectric vibration device, the casing is formed of a substantially rectangular parallelepiped package. This package is composed of a first sealing member and a second sealing member made of, for example, glass or quartz, and a piezoelectric vibration plate made of, for example, quartz and having excitation electrodes formed on both main surfaces thereof. And the second sealing member are laminated and bonded via the piezoelectric diaphragm. And the vibration part (excitation electrode) of the piezoelectric diaphragm arrange | positioned inside the package (internal space) is airtightly sealed (for example, patent document 1). Hereinafter, such a laminated form of piezoelectric vibration devices is referred to as a sandwich structure.

  In addition, the piezoelectric vibration device mounting method includes wire bonding and solder mounting. As an external electrode terminal suitable for solder mounting, there is a method in which a sputtered film is plated. In particular, electroless plating does not require a lead electrode and is suitable for application to a miniaturized device.

JP 2010-252051 A

  In the piezoelectric vibration device having the sandwich structure, an annular bonding pattern made of metal is formed between the first sealing member and the piezoelectric vibration plate to be bonded and between the piezoelectric vibration plate and the second sealing member. The inner peripheral portion of the bonding pattern is hermetically sealed.

  When an external electrode terminal is to be formed by electroless plating on a sandwich structure piezoelectric vibration device, after the three wafers of the first sealing member, the second sealing member, and the piezoelectric vibration plate are bonded, It is appropriate to immerse this in a plating solution for plating.

  However, when the device after the wafer is bonded is immersed in the plating solution, the plating solution also enters the gap between the bonded wafers. At this time, if there is a conductive portion that becomes a part of the wiring on the outer peripheral side of the bonding pattern, metal may be deposited from the plating solution that has entered the periphery of the conductive portion, which may cause connection failure.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a piezoelectric vibration device having a sandwich structure that can avoid poor connection due to deposition of plated metal.

  In order to solve the above problems, according to the present invention, a first excitation electrode is formed on one main surface of a substrate, and a second excitation electrode paired with the first excitation electrode is formed on the other main surface of the substrate. A piezoelectric diaphragm, a first sealing member that covers the first excitation electrode of the piezoelectric diaphragm, and a second sealing member that covers the second excitation electrode of the piezoelectric diaphragm, and The piezoelectric diaphragm including the first excitation electrode and the second excitation electrode, wherein the first sealing member and the piezoelectric diaphragm are joined, the second sealing member and the piezoelectric diaphragm are joined, and In the piezoelectric vibration device in which an internal space in which the vibration part is hermetically sealed is formed, at least one of the first sealing member and the second sealing member is provided on a surface opposite to the bonding surface with the piezoelectric vibration plate. A plating film is formed, between the first sealing member and the piezoelectric diaphragm, and before Between the piezoelectric diaphragm and the second sealing member, a first annular part that is formed in an annular shape so as to surround the vibrating part in a plan view and hermetically seals the vibrating part of the piezoelectric diaphragm, and A conductive pattern provided on the outer peripheral side of the first annular portion at a predetermined distance from the first annular portion; and an annular shape so as to surround the conductive pattern on the outer peripheral side of the conductive pattern; And a second annular portion provided at a predetermined interval.

  In the piezoelectric vibration device having a sandwich structure, when the device is immersed in a plating solution to form a plating film for solder mounting, the piezoelectric vibration plate and the second seal are interposed between the first sealing member and the piezoelectric vibration plate. The plating solution enters between the stop member. And when a conductive pattern exists in the outer peripheral side of a 1st annular part, a metal deposits around this conductive pattern and there exists a possibility of producing a connection defect. According to the above configuration, the second annular portion is provided further on the outer peripheral side of the conductive pattern, and the second annular portion can prevent the plating solution from entering the periphery of the conductive pattern. Defects can also be prevented.

  In the piezoelectric vibration device, the conductive pattern electrically connects a through hole formed in the first sealing member and a through hole formed in the piezoelectric vibration plate, or the piezoelectric vibration. The through hole formed in the plate and the through hole formed in the second sealing member can be electrically coupled.

  According to the above configuration, for example, when the IC chip is mounted on the first sealing member, the IC chip mounting terminal in the first sealing member and the external electrode terminal in the second sealing member are connected by the through hole. Can be connected. Further, by using a through-hole instead of a castellation for connecting the IC chip mounting terminal and the external electrode terminal, it is possible to avoid an increase in the vertical and horizontal dimensions of the device due to an increase in the thickness of the castellation due to plating.

  In the piezoelectric vibration device, the first annular part and the second annular part may be formed so as to partially overlap each other.

  According to the above configuration, by allowing the first annular portion and the second annular portion to overlap, an increase in the size of the piezoelectric vibration device due to the formation of the second annular portion can be minimized. Contributes to miniaturization of devices.

  In another piezoelectric vibration device of the present invention, a first excitation electrode is formed on one main surface of the substrate, and a second excitation electrode paired with the first excitation electrode is formed on the other main surface of the substrate. A piezoelectric diaphragm; a first sealing member that covers the first excitation electrode of the piezoelectric diaphragm; and a second sealing member that covers the second excitation electrode of the piezoelectric diaphragm. The sealing member and the piezoelectric diaphragm are joined, the second sealing member and the piezoelectric diaphragm are joined, and the vibration of the piezoelectric diaphragm including the first excitation electrode and the second excitation electrode In the piezoelectric vibration device in which an internal space in which a part is hermetically sealed is formed, between the first sealing member and the piezoelectric vibration plate, and between the piezoelectric vibration plate and the second sealing member, It is formed in an annular shape so as to surround the vibration part in plan view, and hermetically seals the vibration part of the piezoelectric diaphragm. A first annular portion, a conductive pattern provided on the outer peripheral side of the first annular portion at a predetermined distance from the first annular portion, and an annular shape so as to surround the conductive pattern on the further outer peripheral side of the conductive pattern And a second annular portion formed at a predetermined interval from the conductive pattern.

  The piezoelectric vibration device according to the present invention prevents the plating solution from entering the periphery of the conductive pattern on the outer peripheral side of the first annular portion when the plating film is formed on the sandwich structure device. There is an effect that connection failure due to metal deposition around the substrate can be prevented.

It is the schematic block diagram which showed typically each structure of the crystal resonator which concerns on this Embodiment. It is the schematic block diagram which showed typically each structure of the crystal oscillator which concerns on this Embodiment. It is a schematic plan view of the 1st sealing member of a crystal oscillator. It is a schematic back view of the 1st sealing member of a crystal oscillator. It is a schematic plan view of the crystal diaphragm of a crystal resonator. It is a schematic back view of the crystal diaphragm of a crystal resonator. It is a schematic plan view of the 2nd sealing member of a crystal oscillator. It is a schematic back view of the 2nd sealing member of a crystal oscillator. It is a schematic back view which shows the modification of the 1st sealing member of a crystal oscillator. It is a schematic plan view which shows the modification of the crystal diaphragm of a crystal oscillator. It is a schematic back view which shows the modification of the crystal diaphragm of a crystal oscillator. It is a schematic plan view which shows the modification of the 2nd sealing member of a crystal oscillator.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic configuration diagram schematically showing the configuration of the crystal resonator 101, and FIG. 2 is a schematic configuration diagram schematically showing the configuration of the crystal oscillator 102. A crystal oscillator 102 shown in FIG. 2 has an IC chip 5 mounted on the upper surface of the crystal resonator 101 shown in FIG. The IC chip 5 as an electronic component element is a one-chip integrated circuit element that constitutes an oscillation circuit together with the crystal resonator 101. The piezoelectric vibration device of the present invention is a concept including both a crystal resonator and a crystal oscillator. First, the configuration of the crystal unit 101 according to the present embodiment will be described.

-Crystal resonator-
In the crystal resonator 101 according to the present embodiment, as shown in FIG. 1, a crystal diaphragm (piezoelectric diaphragm) 2, a first sealing member 3, and a second sealing member 4 are provided. In the crystal unit 101, the crystal diaphragm 2 and the first sealing member 3 are joined, and the crystal diaphragm 2 and the second sealing member 4 are joined to form a sandwich-structured package 12. The first sealing member 3 is joined to the crystal vibrating plate 2 so as to cover the first excitation electrode 221 (see FIG. 5) formed on the one main surface 211 of the crystal vibrating plate 2. The second sealing member 4 is joined to the crystal diaphragm 2 so as to cover the second excitation electrode 222 (see FIG. 6) formed on the other main surface 212 of the crystal diaphragm 2.

  In the crystal unit 101, the first sealing member 3 and the second sealing member 4 are bonded to both main surfaces (one main surface 211 and the other main surface 212) of the crystal vibration plate 2, so that the package 12 An internal space 13 is formed, and the vibrating portion 22 (see FIGS. 5 and 6) including the first excitation electrode 221 and the second excitation electrode 222 is hermetically sealed in the internal space 13. The crystal resonator 101 according to the present embodiment has a package size of, for example, 1.0 × 0.8 mm, and is intended to be reduced in size and height.

  Next, each configuration of the above-described crystal resonator 101 will be described with reference to FIGS. Here, the structure of a single member will be described for each of the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4.

  The quartz vibrating plate 2 is a piezoelectric substrate made of quartz, and as shown in FIGS. 5 and 6, both main surfaces 211 and 212 are formed as flat smooth surfaces (mirror finish). In the present embodiment, an AT-cut quartz plate that performs thickness shear vibration is used as the quartz plate 2. In the crystal diaphragm 2 shown in FIGS. 5 and 6, both main surfaces 211 and 212 of the crystal diaphragm 2 are XZ ′ planes. In this XZ ′ plane, the short side direction (short side direction) of the crystal diaphragm 2 is the X-axis direction, and the long direction (long side direction) of the crystal diaphragm 2 is the Z′-axis direction. The AT cut is an angle of 35 ° around the X axis with respect to the Z axis among the electric axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis), which are the three crystal axes of artificial quartz. This is a processing method of cutting at an angle inclined by 15 '. In an AT cut quartz plate, the X axis coincides with the crystal axis of the quartz crystal. The Y ′ axis and the Z ′ axis coincide with axes inclined at 35 ° 15 ′ from the Y axis and the Z axis of the crystal axis of the quartz crystal, respectively. The Y′-axis direction and the Z′-axis direction correspond to the cutting direction when cutting the AT-cut quartz plate.

  A pair of excitation electrodes (a first excitation electrode 221 and a second excitation electrode 222) are formed on both main surfaces 211 and 212 of the crystal diaphragm 2. The crystal diaphragm 2 has a vibrating portion 22 formed in a substantially rectangular shape, an outer frame portion 23 that surrounds the outer periphery of the vibrating portion 22, and a connecting portion 24 that connects the vibrating portion 22 and the outer frame portion 23. The vibration part 22, the connecting part 24, and the outer frame part 23 are integrally provided. In the present embodiment, the connecting part 24 is provided only at one place between the vibrating part 22 and the outer frame part 23, and the place where the connecting part 24 is not provided is a space (gap) 22b. Yes. Although not shown, the vibrating portion 22 and the connecting portion 24 are formed thinner than the outer frame portion 23. Due to the difference in thickness between the outer frame portion 23 and the connecting portion 24, the natural frequency of the piezoelectric vibration of the outer frame portion 23 and the connecting portion 24 is different. As a result, the outer frame portion 23 is less likely to resonate with the piezoelectric vibration of the connecting portion 24.

  The connecting portion 24 extends (projects) from only one corner portion 22a located in the + X direction and the −Z ′ direction of the vibrating portion 22 to the outer frame portion 23 in the −Z ′ direction. Thus, since the connection part 24 is provided in the corner | angular part 22a in which the displacement of a piezoelectric vibration is comparatively small among the outer peripheral edge parts of the vibration part 22, a part other than the corner | angular part 22a (center of a side) Compared with the case where it is provided in the part), it is possible to suppress the piezoelectric vibration from leaking to the outer frame part 23 via the connecting part 24, and to vibrate the vibration part 22 more efficiently.

  The first excitation electrode 221 is provided on one main surface side of the vibration part 22, and the second excitation electrode 222 is provided on the other main surface side of the vibration part 22. An extraction electrode (first extraction electrode 223, second extraction electrode 224) is connected to the first excitation electrode 221 and the second excitation electrode 222. The first extraction electrode 223 is extracted from the first excitation electrode 221, and is connected to the connection bonding pattern 131 formed on the outer frame portion 23 via the connection portion 24. The second extraction electrode 224 is extracted from the second excitation electrode 222, and is connected to the connection bonding pattern 115 c formed on the outer frame portion 23 via the connection portion 24. The first excitation electrode 221 and the first extraction electrode 223 are formed by stacking a base PVD film formed by physical vapor deposition on one main surface 211 and a physical vapor deposition on the base PVD film. Electrode PVD film. The second excitation electrode 222 and the second extraction electrode 224 are formed by stacking a base PVD film formed by physical vapor deposition on the other main surface 212 and a physical vapor deposition on the base PVD film. Electrode PVD film.

  On both main surfaces 211 and 212 of the crystal diaphragm 2, vibration side sealing portions 25 for joining the crystal diaphragm 2 to the first sealing member 3 and the second sealing member 4 are provided. The vibration-side sealing portion 25 includes a vibration-side first bonding pattern 251 and a vibration-side third bonding pattern 253 formed on the one main surface 211 of the crystal diaphragm 2 and a vibration-side second formed on the other main surface 212. It consists of a bonding pattern 252 and a vibration-side fourth bonding pattern 254. The vibration side first joining pattern 251 and the vibration side second joining pattern 252 are provided on the outer frame portion 23 and are formed in an annular shape in plan view. The vibration side third bonding pattern 253 and the vibration side fourth bonding pattern 254 are provided further on the outer peripheral side of the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 in the outer frame portion 23, and are viewed in a plan view. It is formed in an annular shape. The first excitation electrode 221 and the second excitation electrode 222 are not electrically connected to the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252.

  The vibration-side first bonding pattern 251 and the vibration-side third bonding pattern 253 are a base PVD film formed by physical vapor deposition on one main surface 211 and a physical vapor deposition on the base PVD film. And an electrode PVD film formed in a laminated manner. The vibration-side second bonding pattern 252 and the vibration-side fourth bonding pattern 254 are formed by physical vapor deposition on the base PVD film formed by physical vapor deposition on the other main surface 212 and on the base PVD film. And an electrode PVD film formed in a laminated manner.

  That is, the vibration side first bonding pattern 251 to the vibration side fourth bonding pattern 254 have the same configuration, and a plurality of layers are stacked on both main surfaces 211 and 212, and Ti (titanium) is formed from the lowermost layer side. ) Layer and an Au (gold) layer are formed by vapor deposition. Thus, in the vibration side first bonding pattern 251 to the vibration side fourth bonding pattern 254, the base PVD film is made of a single material (Ti), and the electrode PVD film is made of a single material (Au). The electrode PVD film is thicker than the PVD film. In addition, the first excitation electrode 221, the vibration side first bonding pattern 251, and the vibration side third bonding pattern 253 formed on one main surface 211 of the crystal diaphragm 2 have the same thickness, and these surfaces are the same metal. Consists of. Similarly, the second excitation electrode 222, the vibration-side second bonding pattern 252 and the vibration-side fourth bonding pattern 254 formed on the other main surface 212 of the crystal diaphragm 2 have the same thickness, and their surfaces are the same. Made of metal. Moreover, the vibration side 1st joining pattern 251-the vibration side 4th joining pattern 254 are non-Sn patterns.

  Here, the first excitation electrode 221, the first extraction electrode 223, the vibration side first bonding pattern 251 and the vibration side third bonding pattern 253 have the same configuration, so that they are collectively formed in the same process. be able to. Similarly, by forming the second excitation electrode 222, the second extraction electrode 224, the vibration side second bonding pattern 252 and the vibration side fourth bonding pattern 254 in the same configuration, they are collectively formed in the same process. be able to. Specifically, by forming a base PVD film or an electrode PVD film by a PVD method such as vacuum deposition, sputtering, ion plating, MBE, laser ablation (for example, a film forming method for patterning in processing such as photolithography). It is possible to perform film formation in a lump and reduce manufacturing man-hours and contribute to cost reduction.

  In addition, as shown in FIGS. 5 and 6, the crystal diaphragm 2 has five through holes (first to fifth through holes 111 to 115) penetrating between the one main surface 211 and the other main surface 212. Is formed. The first to fourth through holes 111 to 114 are the outer frame portion 23 of the crystal vibrating plate 2 and are provided in regions of four corners (corner portions) of the crystal vibrating plate 2. The fifth through-hole 115 is the outer frame portion 23 of the crystal diaphragm 2, and is on one side of the vibration section 22 of the crystal diaphragm 2 in the Z′-axis direction (the −Z ′ direction side in FIGS. 5 and 6). Is provided.

  The first through hole 111 is connected to the sixth through hole 116 of the first sealing member 3 and the twelfth through hole 122 of the second sealing member 4. The second through hole 112 is connected to the seventh through hole 117 of the first sealing member 3 and the thirteenth through hole 123 of the second sealing member 4. The third through hole 113 is connected to the eighth through hole 118 of the first sealing member 3 and the fourteenth through hole 124 of the second sealing member 4. The fourth through hole 114 is connected to the ninth through hole 119 of the first sealing member 3 and the fifteenth through hole 125 of the second sealing member 4. The fifth through hole 115 is connected to the second extraction electrode 224 extracted from the second excitation electrode 222 and the tenth through hole 120 of the first sealing member 3 through the wiring pattern 33.

  In the first to fifth through holes 111 to 115, through electrodes 111 a to 115 a for conducting the electrodes formed on the one main surface 211 and the other main surface 212 are provided in the first to fifth through holes 111 to 115. 115 is formed along the inner wall surface of each. And the center part of each of the 1st-5th through-holes 111-115 becomes the penetration part 111b-115b of the hollow state penetrated between the one main surface 211 and the other main surface 212. Connection joint patterns 111c to 115c are formed on the outer peripheries of the first to fifth through holes 111 to 115, respectively. The connection bonding patterns 111 c to 115 c are provided on both main surfaces 211 and 212 of the crystal diaphragm 2.

  The connection bonding patterns 111c to 115c have the same configuration as the vibration-side first bonding pattern 251 to the vibration-side fourth bonding pattern 254, and the same process as the vibration-side first bonding pattern 251 to the vibration-side fourth bonding pattern 254. Can be formed. Specifically, the connection bonding patterns 111c to 115c are formed by forming a base PVD film formed by physical vapor deposition on both main surfaces 211 and 212 of the crystal diaphragm 2, and a physical pattern on the base PVD film. The electrode PVD film is formed by vapor deposition.

  The connection bonding patterns 111 c to 114 c formed on the one main surface 211 and the other main surface 212 of the crystal vibration plate 2 are arranged on the outer peripheral side of the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252. The vibration side first joining pattern 251 and the vibration side second joining pattern 252 are provided at a predetermined interval. The vibration side third bonding pattern 253 and the vibration side fourth bonding pattern 254 are arranged on the outer peripheral side of the connection bonding patterns 111c to 114c, and are separated from the connection bonding patterns 111c to 114c by a predetermined interval. It is formed to surround. The connection bonding pattern 115 c formed on the other main surface 212 of the crystal diaphragm 2 extends along the X-axis direction in the outer frame portion 23 of the crystal diaphragm 2 and is extracted from the second excitation electrode 222. It is formed integrally with the second extraction electrode 224.

  In addition, a connection bonding pattern 131 formed integrally with the first extraction electrode 223 extracted from the first excitation electrode 221 is provided on one main surface 211 of the crystal diaphragm 2. The connection bonding pattern 131 is provided on the outer frame portion 23 of the crystal vibrating plate 2 and on the −Z ′ direction side of the vibrating portion 22 of the crystal vibrating plate 2. In addition, a connection bonding pattern 132 is provided on one main surface 211 of the crystal diaphragm 2 at a position opposite to the connection portion 131 in the Z′-axis direction with respect to the connection portion 131 of the crystal vibration plate 2. It has been. That is, the connection bonding patterns 131 and 132 are provided on both sides in the Z′-axis direction of the vibration part 22. The connection bonding pattern 132 extends along the X-axis direction in the outer frame portion 23 of the crystal diaphragm 2.

  Further, on one main surface 211 of the crystal diaphragm 2, connection joint patterns 133 and 134 are provided on the both sides of the outer frame portion 23 of the crystal diaphragm 2 in the X-axis direction of the vibration section 22. . The connection bonding patterns 133 and 134 are provided in the vicinity of the long side along the long side of the crystal diaphragm 2 and extend along the Z′-axis direction. The connection bonding pattern 133 is provided between the connection bonding pattern 111c formed on the one main surface 211 of the crystal diaphragm 2 and the connection bonding pattern 113c. The connection bonding pattern 134 is provided between the connection bonding pattern 112c and the connection bonding pattern 114c.

  On the other main surface 212 of the crystal diaphragm 2, a connection pattern 135 for connection is provided at a position opposite to the Z′-axis direction with respect to the connection portion 115c of the crystal plate 2 with the vibration portion 22 of the crystal plate 2 interposed therebetween. Yes. In other words, the connection bonding patterns 115 c and 135 are provided on both sides of the vibrating portion 22 in the Z′-axis direction. Further, on the other main surface 212 of the crystal diaphragm 2, connection joint patterns 136 and 137 are provided on the outer frame portion 23 of the crystal diaphragm 2 on both sides in the X-axis direction of the vibration section 22. . The joint patterns for connection 136 and 137 are provided in the vicinity of the long side along the long side of the crystal diaphragm 2 and extend along the Z′-axis direction. The connection bonding pattern 136 is provided between the connection bonding pattern 111c formed on the other main surface 212 of the crystal diaphragm 2 and the connection bonding pattern 113c. The connection bonding pattern 137 is provided between the connection bonding pattern 112c and the connection bonding pattern 114c.

  In the quartz crystal resonator 101, the first to fourth through holes 111 to 114 and the connecting bonding patterns 111 c to 114 c, 133, 134, 136, and 137 are from the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252. Are also provided on the outer peripheral side and on the inner peripheral side of the vibration side third bonding pattern 253 and the vibration side fourth bonding pattern 254. The fifth through-hole 115 and the connecting bonding patterns 115 c, 131, 132, 135 are provided on the inner peripheral side of the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252. The connection bonding patterns 111c to 115c and 131 to 137 are not electrically connected to the vibration side first bonding pattern 251 to the vibration side fourth bonding pattern 254.

The first sealing member 3 is made of a material having a bending rigidity (secondary moment of section × Young's modulus) of 1000 [N · mm ² ] or less. Specifically, as shown in FIGS. 3 and 4, the first sealing member 3 is a rectangular parallelepiped substrate formed from one glass wafer, and the other main surface 312 ( The surface to be bonded to the quartz diaphragm 2 is formed as a flat smooth surface (mirror finish).

  The other main surface 312 of the first sealing member 3 is provided with a sealing-side first sealing portion 32 for joining to the crystal diaphragm 2. The sealing side first sealing part 32 is formed with a sealing side first bonding pattern 321 and a sealing side third bonding pattern 322 for bonding to the crystal vibrating plate 2. The sealing side first bonding pattern 321 is formed in an annular shape in plan view. The sealing-side third bonding pattern 322 is disposed on the outer peripheral side of the sealing-side first bonding pattern 321 and is formed in an annular shape in plan view.

  The sealing-side first bonding pattern 321 and the sealing-side third bonding pattern 322 include a base PVD film formed by physical vapor deposition on the first sealing member 3 and a physical layer on the base PVD film. The electrode PVD film is formed by the chemical vapor deposition. In this embodiment, Ti is used for the base PVD film, and Au is used for the electrode PVD film. Moreover, the sealing side first bonding pattern 321 and the sealing side third bonding pattern 322 are non-Sn patterns.

  On one main surface 311 (surface on which the IC chip 5 is mounted) of the first sealing member 3, as shown in FIGS. 3 and 4, six electrodes including mounting pads on which the IC chip 5 that is an oscillation circuit element is mounted. A pattern 37 is formed. In FIG. 3, the mounting area of the IC chip 5 is virtually indicated by a broken line. The six electrode patterns 37 are individually connected to the sixth to eleventh through holes 116 to 121, respectively.

  In the first sealing member 3, six through holes (sixth to eleventh through holes 116 to 121) penetrating between the one main surface 311 and the other main surface 312 are formed. The sixth to ninth through holes 116 to 119 are provided in regions of the four corners (corner portions) of the first sealing member 3. The tenth and eleventh through holes 120 and 121 are provided on both sides in the A2 direction of FIG.

  The sixth through hole 116 is connected to the first through hole 111 of the crystal diaphragm 2. The seventh through hole 117 is connected to the second through hole 112 of the crystal diaphragm 2. The eighth through hole 118 is connected to the third through hole 113 of the crystal diaphragm 2. The ninth through hole 119 is connected to the fourth through hole 114 of the crystal diaphragm 2. The tenth through hole 120 is connected to the fifth through hole 115 of the crystal diaphragm 2 via the wiring pattern 33. The eleventh through hole 121 is connected to the first extraction electrode 223 extracted from the first excitation electrode 221.

  In the sixth to eleventh through holes 116 to 121, through electrodes 116a to 121a for conducting the electrodes formed on the one main surface 311 and the other main surface 312 are provided. 121 is formed along each inner wall surface. The center portions of the sixth to eleventh through holes 116 to 121 are hollow through portions 116 b to 121 b that penetrate between the one main surface 311 and the other main surface 312. Connection joining patterns 116c to 121c are formed on the outer peripheries of the sixth to eleventh through holes 116 to 121, respectively. The connecting bonding patterns 116 c to 121 c are provided on the other main surface 312 of the first sealing member 3.

  The connection bonding patterns 116c to 121c have the same configuration as the sealing-side first bonding pattern 321 and the sealing-side third bonding pattern 322, and the sealing-side first bonding pattern 321 and the sealing-side third bonding pattern 322. Can be formed by the same process. Specifically, the connecting bonding patterns 116c to 121c are formed on the base PVD film formed by physical vapor deposition on the other main surface 312 of the first sealing member 3, and on the base PVD film. The electrode PVD film is formed by vapor deposition.

  The connection bonding patterns 116c to 119c formed on the other main surface 312 of the first sealing member 3 are at the four corners (corner portions) of the first sealing member 3 on the outer peripheral side of the sealing side first bonding pattern 321. It is provided in the region and is provided at a predetermined interval from the sealing-side first bonding pattern 321. The sealing-side third bonding pattern 322 is disposed on the outer peripheral side of the connection bonding patterns 116c to 119c, and is formed so as to surround the connection bonding patterns 116c to 119c with a predetermined interval. Yes. The connection bonding pattern 120 c of the tenth through hole 120 extends along the direction of the arrow A 1 in FIG. 4 and is formed integrally with the wiring pattern 33. In addition, the other main surface 312 of the first sealing member 3 is provided with a connection bonding pattern 138 at a position opposite to the arrow A2 direction across the wiring pattern 33 with respect to the connection bonding pattern 120c. . That is, the connection bonding pattern 120c is connected to one end side of the wiring pattern 33 in the arrow A2 direction, and the connection bonding pattern 138 is connected to the other end side. Note that the A1 direction and the A2 direction in FIG. 4 coincide with the X-axis direction and the Z′-axis direction in FIG. 5, respectively.

  Further, on the other main surface 312 of the first sealing member 3, connection bonding patterns 139 and 140 are provided in the vicinity of the long side along the long side of the first sealing member 3. The connecting joint patterns 139 and 140 extend along the direction of the arrow A2 in FIG. The connection bonding pattern 139 is provided between the connection bonding pattern 116 c formed on the other main surface 312 of the first sealing member 3 and the connection bonding pattern 118 c. The connection bonding pattern 140 is provided between the connection bonding pattern 117c and the connection bonding pattern 119c.

  In the crystal unit 101, the sixth to ninth through holes 116 to 119 and the connecting bonding patterns 116 c to 119 c, 139, and 140 are arranged on the outer peripheral side of the sealing side first bonding pattern 321 and on the sealing side third. Provided on the inner peripheral side of the bonding pattern 322. The tenth and eleventh through holes 120 and 121 and the connecting joint patterns 120c, 121c, and 138 are provided on the inner peripheral side with respect to the sealing-side first joint pattern 321. The connection bonding patterns 116 c to 121 c and 138 to 140 are not electrically connected to the sealing side first bonding pattern 321 and the sealing side third bonding pattern 322. Also, the wiring pattern 33 is not electrically connected to the sealing side first bonding pattern 321 and the sealing side third bonding pattern 322.

For the second sealing member 4, a material having a bending rigidity (secondary moment of section × Young's modulus) of 1000 [N · mm ² ] or less is used. Specifically, as shown in FIGS. 7 and 8, the second sealing member 4 is a rectangular parallelepiped substrate formed from one glass wafer, and one main surface 411 ( The surface to be bonded to the quartz diaphragm 2 is formed as a flat smooth surface (mirror finish).

  The main surface 411 of the second sealing member 4 is provided with a sealing-side second sealing portion 42 for joining to the crystal diaphragm 2. The sealing-side second sealing part 42 is formed with a sealing-side second bonding pattern 421 and a sealing-side fourth bonding pattern 422 for bonding to the crystal vibrating plate 2. The sealing-side second bonding pattern 421 is formed in an annular shape in plan view. The sealing-side fourth bonding pattern 422 is disposed further on the outer peripheral side of the sealing-side second bonding pattern 421 and is formed in an annular shape in plan view.

  The sealing-side second bonding pattern 421 and the sealing-side fourth bonding pattern 422 include a base PVD film formed by physical vapor deposition on the second sealing member 4 and a physical layer on the base PVD film. The electrode PVD film is formed by the chemical vapor deposition. In this embodiment, Ti is used for the base PVD film, and Au is used for the electrode PVD film. Further, the sealing side second bonding pattern 421 and the sealing side fourth bonding pattern 422 are non-Sn patterns.

  On the other main surface 412 of the second sealing member 4 (the outer main surface not facing the crystal diaphragm 2), there are four external electrode terminals (first to fourth external electrode terminals 433) that are electrically connected to the outside. ˜436). The first to fourth external electrode terminals 433 to 436 are respectively located at the four corners (corner portions) of the second sealing member 4. These external electrode terminals (first to fourth external electrode terminals 433 to 436) are a base PVD film formed by physical vapor deposition on the other main surface 412, and a physical vapor deposition on the base PVD film. And an electrode PVD film formed in a stacked manner.

  As shown in FIGS. 7 and 8, the second sealing member 4 has four through-holes (12th to 15th through-holes 122 to 125) penetrating between one main surface 411 and the other main surface 412. Is formed. The twelfth to fifteenth through holes 122 to 125 are provided in the four corner (corner) regions of the second sealing member 4. The twelfth through hole 122 is connected to the first external electrode terminal 433 and the first through hole 111 of the crystal diaphragm 2. The thirteenth through hole 123 is connected to the second external electrode terminal 434 and the second through hole 112 of the crystal diaphragm 2. The fourteenth through hole 124 is connected to the third external electrode terminal 435 and the third through hole 113 of the crystal diaphragm 2. The fifteenth through-hole 125 is connected to the fourth external electrode terminal 436 and the fourth through-hole 114 of the crystal diaphragm 2.

  In the twelfth to fifteenth through holes 122 to 125, through electrodes 122 a to 125 a for conducting the electrodes formed on the one main surface 411 and the other main surface 412 are provided in the twelfth to fifteenth through holes 122 to 125. 125 is formed along the inner wall surface of each. The central portions of the twelfth to fifteenth through holes 122 to 125 are hollow through portions 122 b to 125 b that penetrate between the one main surface 411 and the other main surface 412. Connection joint patterns 122c to 125c are formed on the outer peripheries of the twelfth to fifteenth through holes 122 to 125, respectively. The connection bonding patterns 122 c to 125 c are provided on one main surface 411 of the second sealing member 4.

  The connection bonding patterns 122c to 125c have the same configuration as the sealing-side second bonding pattern 421 and the sealing-side fourth bonding pattern 422, and the sealing-side second bonding pattern 421 and the sealing-side fourth bonding pattern 422. Can be formed by the same process. Specifically, the connection bonding patterns 122c to 125c are formed on the base PVD film formed by physical vapor deposition on the main surface 411 of the second sealing member 4 and on the base PVD film. The electrode PVD film is formed by vapor deposition.

  The connection bonding patterns 122c to 125c formed on the one main surface 411 of the second sealing member 4 are at the four corners (corner portions) of the second sealing member 4 on the outer peripheral side of the sealing-side second bonding pattern 421. It is provided in the region and is provided at a predetermined interval from the sealing-side second bonding pattern 421. The sealing-side fourth bonding pattern 422 is disposed further on the outer peripheral side of the connection bonding patterns 122c to 125c, and is formed so as to surround the connection bonding patterns 122c to 125c with a predetermined interval. Further, on one main surface 411 of the second sealing member 4, connection bonding patterns 141 and 142 are provided in a region near the long side along the long side of the second sealing member 4. The connection bonding patterns 141 and 142 extend along the direction of the arrow B2 in FIG. The connection bonding pattern 141 is provided between the connection bonding pattern 122 c formed on the one main surface 411 of the second sealing member 4 and the connection bonding pattern 124 c. The connection bonding pattern 142 is provided between the connection bonding pattern 123c and the connection bonding pattern 125c.

  Further, on one main surface 411 of the second sealing member 4, connection joint patterns 143 and 144 extending in the direction of arrow B <b> 1 in FIG. 7 are provided. The connecting joint patterns 143 and 144 are provided in regions on both ends in the direction of arrow B2 in FIG. The connection bonding pattern 143 is provided between the connection bonding pattern 122 c formed on the one main surface 411 of the second sealing member 4 and the connection bonding pattern 123 c. The connection bonding pattern 144 is provided between the connection bonding pattern 124c and the connection bonding pattern 125c. Note that the B1 direction and the B2 direction in FIG. 7 coincide with the X-axis direction and the Z′-axis direction in FIG. 5, respectively.

  In the crystal unit 101, the twelfth to fifteenth through holes 122 to 125 and the connecting joint patterns 122 c to 125 c, 141, and 142 are arranged on the outer peripheral side of the sealing side second joint pattern 421 and on the sealing side fourth. Provided on the inner peripheral side with respect to the bonding pattern 422. The connecting bonding patterns 143 and 144 are provided on the inner peripheral side with respect to the sealing-side second bonding pattern 421. The connection bonding patterns 122c to 125c and 141 to 144 are not electrically connected to the sealing-side second bonding pattern 421 and the sealing-side fourth bonding pattern 422.

  In the quartz resonator 101, the quartz diaphragm 2, the first sealing member 3, and the second sealing member 4 are joined as follows to manufacture a package 12 having a sandwich structure. That is, the crystal diaphragm 2 and the first sealing member 3 overlap the vibration side first bonding pattern 251 and the sealing side first bonding pattern 321, and the vibration side third bonding pattern 253 and the sealing side third bonding are overlapped. Diffusion bonding is performed with the pattern 322 overlaid. Then, the crystal vibrating plate 2 and the second sealing member 4 overlap the vibration side second bonding pattern 252 and the sealing side second bonding pattern 421 so that the vibration side fourth bonding pattern 254 and the sealing side fourth bonding are overlapped. Diffusion bonding is performed with the pattern 422 superimposed. As a result, the internal space 13 of the package 12, that is, the accommodation space of the vibration part 22 is hermetically sealed without using a special bonding material such as an adhesive.

  As shown in FIG. 1, between the crystal diaphragm 2 and the first sealing member 3, the vibration side first bonding pattern 251 and the sealing side first bonding pattern 321 themselves are bonded after diffusion bonding. The vibration side third bonding pattern 253 and the sealing side third bonding pattern 322 themselves become the bonding material 15c generated after diffusion bonding. And between the quartz-crystal diaphragm 2 and the 2nd sealing member 4, the vibration side 2nd joining pattern 252 and the sealing side 2nd joining pattern 421 itself become the joining material 15b produced | generated after a diffusion joining, and vibration side 1st The 4 bonding pattern 254 and the sealing side fourth bonding pattern 422 itself become the bonding material 15d generated after diffusion bonding. Here, the bonding materials 15a and 15b are formed as the first annular portion described in the claims. The bonding materials 15c and 15d are formed as the second annular portion described in the claims.

  The bonding materials 15a to 15d are provided at positions that substantially coincide with each other in plan view. In other words, the bonding materials 15a to 15d are provided at positions where the inner peripheral edge and the outer peripheral edge substantially coincide. In addition, it is possible to improve the joining strength of joining material 15a-15d by performing in the state which pressurized each joining pattern.

  At this time, diffusion bonding is performed in a state where the above-described bonding patterns for connection are also overlapped. Specifically, the connection bonding patterns 111 c to 114 c at the four corners of the crystal diaphragm 2 and the connection bonding patterns 116 c to 119 c at the four corners of the first sealing member 3 are diffusion bonded. The connection bonding patterns 111c to 114c and the connection bonding patterns 116c to 119c themselves become the bonding materials 16a to 16d generated after diffusion bonding. Further, the connection bonding patterns 133 and 134 in the vicinity of the long side of the crystal diaphragm 2 and the connection bonding patterns 139 and 140 in the vicinity of the long side of the first sealing member 3 are diffusion bonded. The connection bonding pattern 115c of the crystal diaphragm 2 and the connection bonding pattern 138 of the first sealing member 3 are diffusion bonded. The connection bonding pattern 131 of the crystal diaphragm 2 and the connection bonding pattern 121c of the first sealing member 3 are diffusion bonded. The connection bonding pattern 132 of the crystal diaphragm 2 and the connection bonding pattern 120c of the first sealing member 3 are diffusion bonded. The bonding material generated after the bonding pattern for connection itself is diffusion bonded serves to conduct the through electrode of the through hole and to hermetically seal the bonding portion.

  Similarly, the connection bonding patterns 111c to 114c at the four corners of the crystal vibrating plate 2 and the connection bonding patterns 122c to 125c at the four corners of the second sealing member 4 are diffusion bonded. The connection bonding patterns 111c to 114c and the connection bonding patterns 122c to 125c themselves become the bonding materials 17a to 17d generated after diffusion bonding. Further, the connection bonding patterns 136 and 137 in the vicinity of the long side of the crystal diaphragm 2 and the connection bonding patterns 141 and 142 in the vicinity of the long side of the second sealing member 4 are diffusion bonded. The connection bonding pattern 115c of the crystal diaphragm 2 and the connection bonding pattern 144 of the second sealing member 4 are diffusion bonded. The connection bonding pattern 135 of the crystal diaphragm 2 and the connection bonding pattern 143 of the second sealing member 4 are diffusion bonded.

  The crystal resonator 101 according to the present embodiment is premised on applying solder mounting when mounting on an electric circuit board. As shown in FIG. Plating film 51 is formed on first to fourth external electrode terminals 433 to 436 formed on main surface 412. Moreover, it is only the 1st-4th external electrode terminal 433-436 that formation of a plating film is needed from a viewpoint of the solder mounting to an electric circuit board | substrate. However, in the crystal unit 101 according to the present embodiment, the plating film 52 may also be formed on the electrode pattern 37 formed on the one main surface 311 of the first sealing member 3.

  A crystal oscillator 102 shown in FIG. 2 has an IC chip 5 mounted on a crystal resonator 101. At this time, the electrode pattern 37 is used as a mounting terminal and wiring for mounting the IC chip 5, and the IC chip 5 is bonded to the electrode pattern 37 using a metal bump (for example, Au bump) 38. In a conventional crystal oscillator, an FCB (Flip chip Bonding) method is generally used for mounting an IC chip on a crystal resonator. In the crystal oscillator 102, the plating film 52 is formed on the electrode pattern 37. However, when the IC chip 5 is mounted on the crystal resonator 101 by the FCB method, the presence of the plating film 52 is not particularly problematic.

  The plating films 51 and 52 are preferably formed by electroless plating after the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 are joined. That is, plating is performed by immersing the crystal resonator 101 to which the crystal vibrating plate 2, the first sealing member 3, and the second sealing member 4 are bonded in a plating solution. At this time, the first to fourth external electrode terminals 433 to 436 and the electrode pattern 37 can be plated simultaneously by immersing the entire crystal unit 101 in the plating solution.

  When the quartz crystal resonator 101 is immersed in the plating solution in this manner, the plating solution also enters the gaps between the joined members (the crystal vibrating plate 2, the first sealing member 3, and the second sealing member 4). In the crystal resonator 101 according to the present embodiment, since the bonding materials 15c and 15d, which are the second annular portions, are formed, it is possible to prevent poor connection due to the deposition of plated metal.

  In the crystal unit 101, the bonding materials 16a to 16d and the bonding materials 17a to 17d are formed as the conductive patterns described in the claims on the outer peripheral side of the bonding materials 15a and 15b which are the first annular portions. The bonding materials 16 a to 16 d and the bonding materials 17 a to 17 d are the electrode pattern 37 on the one main surface 311 of the first sealing member 3 and the first to fourth external electrode terminals on the other main surface 412 of the second sealing member 4. It functions as part of wiring that electrically connects 433 to 436. In other words, the bonding materials 16a to 16d and the bonding materials 17a to 17d are the through holes (first to fourth through holes 111 to 114) formed in the quartz crystal plate 2 and the first or second sealing members 3 and 4. The through holes (sixth to ninth through holes 116 to 119, twelfth to fifteenth through holes 122 to 125) formed in the first and second holes are electrically coupled.

  In this case, if the bonding materials 15c and 15d are not formed on the crystal unit 101, the plating solution enters the bonding materials 16a to 16d and 17a to 17d in the gaps between the members. When the plating solution enters the periphery of the bonding materials 16a to 16d and 17a to 17d, metal is precipitated from the plating solution, and for example, a connection failure such as a short circuit between the bonding materials 16a to 16d and 17a to 17d and the bonding materials 15a and 15b. Can cause

  On the other hand, when the bonding materials 15c and 15d are formed, it is possible to prevent the plating solution from entering around the bonding materials 16a to 16d and the bonding materials 17a to 17d. As a result, poor connection due to metal deposition around the bonding materials 16a to 16d and 17a to 17d can be prevented.

  Note that the bonding materials 15a and 15b, which are the first annular portions, hermetically seal the vibration portion 22 of the crystal diaphragm 2, and are required to have high sealing properties, whereas the bonding materials 15a, 15b are the second annular portions. The materials 15c and 15d only need to have a sealing property that can prevent the plating solution from entering. For this reason, the line widths of the bonding materials 15c and 15d may be narrower than the line widths of the bonding materials 15a and 15b.

  In a piezoelectric vibration device, a castellation is generally formed on a side surface of the device in order to conduct an electrode. However, in the quartz crystal resonator 101, the conduction of the electrodes is achieved using the through holes (first to fifteenth through holes 111 to 125) without forming a castellation. This is because in a structure in which castellation exists, the film thickness of the castellation increases due to electroless plating, and the vertical and horizontal dimensions of the device increase. In the crystal unit 101, it is possible to avoid an increase in the vertical and horizontal dimensions of the device by using a through-hole for electrode conduction and omitting castellation.

  4 and 5, the other main surface 312 of the first sealing member 3 and the one main surface 211 of the crystal diaphragm 2 are the sealing-side first bonding pattern 321 and the vibration-side first that become the bonding material 15a. The bonding pattern 251, the sealing side third bonding pattern 322, and the vibration side third bonding pattern 253 are formed separately from each other. Similarly, on the other main surface 212 of the quartz crystal plate 2 and the one main surface 411 of the second sealing member 4 shown in FIGS. 6 and 7, the vibration side second bonding pattern 252 and the sealing side first surface serving as the bonding material 15b are used. The two bonding patterns 421, the vibration side fourth bonding pattern 254, and the sealing side fourth bonding pattern 422 are formed separately from each other. Therefore, also in the crystal unit 101, the bonding materials 15a and 15b as the first annular portion and the bonding materials 15c and 15d as the second annular portion are formed separately from each other.

  However, the present invention is not limited to this, and the bonding materials 15a and 15b that are the first annular portions and the bonding materials 15c and 15d that are the second annular portions are formed so as to partially overlap each other. May be. On the other main surface 312 of the first sealing member 3 and the one main surface 211 of the crystal diaphragm 2 shown in FIGS. 9 and 10, the sealing-side first bonding pattern 321 and the vibration-side first bonding pattern that become the bonding material 15a. 251 and the sealing-side third bonding pattern 322 and the vibration-side third bonding pattern 253 are formed so as to overlap each other. Similarly, on the other main surface 212 of the quartz crystal plate 2 and the one main surface 411 of the second sealing member 4 shown in FIGS. 11 and 12, the vibration side second bonding pattern 252 and the sealing side first surface serving as the bonding material 15b are used. The second bonding pattern 421 is formed so that a part of the vibration side fourth bonding pattern 254 and the sealing side fourth bonding pattern 422 overlap each other. In this case, also in the crystal unit 101, the bonding materials 15a and 15b as the first annular portion and the bonding materials 15c and 15d as the second annular portion are formed so as to partially overlap each other. In this way, by allowing the first annular portion and the second annular portion to overlap, an increase in the size of the crystal resonator 101 due to the formation of the second annular portion can be minimized, and the crystal resonator 101 Contributes to downsizing.

  9 to 12, the first annular portion and the second annular portion are superimposed in the vicinity of the short side along the short side of the crystal unit 101, but the present invention is not limited to this. Instead, the superposition may be generated in the long-side vicinity region, or the superposition may be generated in both the short-side vicinity region and the long-side vicinity region.

  The embodiments disclosed herein are illustrative in all respects and do not serve as a basis for limited interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments, but is defined based on the description of the scope of claims. Further, all modifications within the meaning and scope equivalent to the scope of the claims are included.

101 Crystal resonator (piezoelectric vibration device)
102 Crystal oscillator (piezoelectric vibration device)
2 Quartz diaphragm (piezoelectric diaphragm)
3 First sealing member 4 Second sealing member 5 IC chip 12 Package 13 Internal space 15a, 15b Bonding material (first annular portion)
15c, 15d bonding material (second annular portion)
16a to 16d, 17a to 17d Bonding material (conductive pattern)
111 to 125 First to fifteenth through holes 22 Vibration part 23 Outer frame part 24 Connection part 221 First excitation electrode 222 Second excitation electrode 251 Vibration side first joint pattern 252 Vibration side second joint pattern 253 Vibration side third joint Pattern 254 Vibration side fourth bonding pattern 37 Electrode pattern 321 Sealing side first bonding pattern 322 Sealing side third bonding pattern 421 Sealing side second bonding pattern 422 Sealing side fourth bonding pattern 433 to 436 First to first 4 External electrode terminal 51, 52 Plating film

Claims (4)

A piezoelectric diaphragm in which a first excitation electrode is formed on one main surface of the substrate and a second excitation electrode paired with the first excitation electrode is formed on the other main surface of the substrate;
A first sealing member that covers the first excitation electrode of the piezoelectric diaphragm;
A second sealing member that covers the second excitation electrode of the piezoelectric diaphragm,
The piezoelectric vibration including the first excitation electrode and the second excitation electrode, wherein the first sealing member and the piezoelectric diaphragm are joined, and the second sealing member and the piezoelectric diaphragm are joined. In the piezoelectric vibration device in which an internal space in which the vibration part of the plate is hermetically sealed is formed,
On at least one of the first sealing member and the second sealing member, a plating film is formed on the surface opposite to the bonding surface with the piezoelectric diaphragm,
Between the first sealing member and the piezoelectric diaphragm, and between the piezoelectric diaphragm and the second sealing member,
A first annular part formed in an annular shape so as to surround the vibration part in plan view, and hermetically sealing the vibration part of the piezoelectric diaphragm;
A conductive pattern provided on the outer peripheral side of the first annular portion and spaced apart from the first annular portion;
Piezoelectric vibrations, characterized in that the conductive pattern is formed in an annular shape so as to surround the conductive pattern on the outer peripheral side, and is formed with a second annular portion provided at a predetermined interval from the conductive pattern. device. The piezoelectric vibration device according to claim 1,
The conductive pattern electrically connects a through-hole formed in the first sealing member and a through-hole formed in the piezoelectric diaphragm, or a through-hole formed in the piezoelectric diaphragm. A piezoelectric vibration device characterized in that it electrically couples with a through hole formed in the second sealing member. The piezoelectric vibration device according to claim 1 or 2,
The piezoelectric vibration device according to claim 1, wherein the first annular portion and the second annular portion are partially overlapped. A piezoelectric diaphragm in which a first excitation electrode is formed on one main surface of the substrate and a second excitation electrode paired with the first excitation electrode is formed on the other main surface of the substrate;
A first sealing member that covers the first excitation electrode of the piezoelectric diaphragm;
A second sealing member that covers the second excitation electrode of the piezoelectric diaphragm,
The piezoelectric vibration including the first excitation electrode and the second excitation electrode, wherein the first sealing member and the piezoelectric diaphragm are joined, and the second sealing member and the piezoelectric diaphragm are joined. In the piezoelectric vibration device in which an internal space in which the vibration part of the plate is hermetically sealed is formed,
Between the first sealing member and the piezoelectric diaphragm, and between the piezoelectric diaphragm and the second sealing member,
A first annular part formed in an annular shape so as to surround the vibration part in plan view, and hermetically sealing the vibration part of the piezoelectric diaphragm;
A conductive pattern provided on the outer peripheral side of the first annular portion and spaced apart from the first annular portion;
Piezoelectric vibrations, characterized in that the conductive pattern is formed in an annular shape so as to surround the conductive pattern on the outer peripheral side, and is formed with a second annular portion provided at a predetermined interval from the conductive pattern. device.

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