JP2018037636A - Semiconductor package and semiconductor package manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package capable of improving conductivity between a substrate and a semiconductor chip through an intermediate layer.SOLUTION: A semiconductor package of an embodiment comprises a substrate, a semiconductor chip, an intermediate layer and a molecular junction layer. The substrate has a first conductive part and a first insulation part. The semiconductor chip has a second conductive part and a second insulation part. The intermediate layer has a third conductive part and a third insulation part. The molecular junction layer is provided between at least either one of the first conductive part and the second conductive part and the third conductive part. At least part of the molecular junction layer is chemically bonded with resin contained in the third conductive part. At least part of the molecular junction layer is chemically bonded with at least either one of a first conductive material included in the first conductive part and a second conductive material included in the second conductive part.SELECTED DRAWING: Figure 1

Description

Embodiments described herein relate generally to a semiconductor package and a semiconductor package manufacturing method.

A semiconductor package including a base substrate, a semiconductor chip, and an intermediate layer provided between the base substrate and the semiconductor chip is known.

JP 2016-1111026 A

The problem to be solved by the present invention is to provide a semiconductor package capable of enhancing the conductivity between a substrate and a semiconductor chip through an intermediate layer.

The semiconductor package of the embodiment includes a substrate, a semiconductor chip, an intermediate layer, and a molecular bonding layer. The substrate has a first conductive part and a first insulating part. The semiconductor chip has a second conductive part and a second insulating part. The intermediate layer has a third conductive portion and a third insulating portion. The third conductive part includes a plurality of conductive particles and a resin, and is provided between the first conductive part and the second conductive part to electrically connect the first conductive part and the second conductive part. Connected to. The third insulating portion is provided between the first insulating portion and the second insulating portion. The molecular bonding layer is provided between at least one of the first conductive portion and the second conductive portion and the third conductive portion. At least a part of the molecular bonding layer is chemically bonded to the resin of the third conductive portion. At least a part of the molecular bonding layer is chemically bonded to at least one of the first conductive material included in the first conductive portion and the second conductive material included in the second conductive portion.

Sectional drawing which shows the semiconductor package of 1st Embodiment. FIG. 3 is a cross-sectional view schematically showing the configuration of the semiconductor package of the first embodiment. The figure which shows typically an example of a composition of the molecular junction layer of 1st Embodiment. Sectional drawing which follows the F4-F4 line | wire of the molecular junction layer shown in FIG. Sectional drawing which shows an example of the flow of the manufacturing method of the semiconductor package of 1st Embodiment. Sectional drawing which shows the semiconductor package of 2nd Embodiment. Sectional drawing which follows the F7-F7 line | wire of the molecular junction layer shown in FIG. Sectional drawing which shows an example of the flow of the manufacturing method of the semiconductor package of 2nd Embodiment. The top view which shows the mask of 2nd Embodiment. Sectional drawing which shows the semiconductor package of 3rd Embodiment. Sectional drawing which expands and shows the circumference | surroundings of the 1st electroconductive part of 3rd Embodiment. The top view which shows the mask of 3rd Embodiment. Sectional drawing which shows the semiconductor package of 4th Embodiment. The top view which shows the mask of 4th Embodiment. Sectional drawing which shows a part of semiconductor package of the modification of 4th Embodiment. Sectional drawing which shows the semiconductor package of 5th Embodiment. Sectional drawing which expands and shows the periphery of the heat conductive sheet of 5th Embodiment. FIG. 7 is a perspective view illustrating an example of an electronic apparatus according to an embodiment.

Hereinafter, a semiconductor package and a method for manufacturing the semiconductor package of the embodiment will be described with reference to the drawings. In the following description, the same reference numerals are given to configurations having the same or similar functions. And those overlapping descriptions may be omitted. The drawings are schematic, and the number, thickness, width, ratio, and the like of each component may be different from actual ones.

(First embodiment)
First, the first embodiment will be described with reference to FIGS.

  FIG. 1 is a cross-sectional view showing a semiconductor package 10 of the first embodiment.

The semiconductor package 10 of the present embodiment is, for example, a semiconductor component used as a vehicle-mounted component or a power semiconductor. However, the semiconductor package 10 is not limited to a vehicle-mounted component or a power semiconductor, and may be a semiconductor component used for other purposes.

As shown in FIG. 1, the semiconductor package 10 of this embodiment includes a base substrate 20, a semiconductor chip 30, a molecular bonding layer 40, and an intermediate layer 50.

The base substrate 20 is an example of a “substrate”. The base substrate 20 includes a base substrate body 21, a first insulating part 22, and a plurality of first conductive parts 23. The base substrate body 21 is formed of, for example, an organic substrate or an inorganic substrate. The base substrate body 21 may be made of a material having high thermal conductivity. By using a material having high thermal conductivity, heat dissipation during operation of the semiconductor package 10 is enhanced. For example, the base substrate body 21 is made of an insulator such as an organic compound,
It is formed of a conductor such as a semiconductor or a partially insulated metal. For example, base substrate body 2
1 includes a wiring pattern. The wiring pattern of the base substrate body 21 includes a semiconductor chip 30.
At least one of the electric signal from the signal and the electric signal to the semiconductor chip 30 flows. The base substrate body 21 may be a multilayer substrate. For example, a part of the base substrate body 21 may be formed of metal. By forming a part of the base substrate body 21 from metal, the thermal conductivity of the semiconductor package 10 can be further increased. Examples of the metal material of a part of the base substrate body 21 include Cu, Mo, Ag, W, and alloys thereof. For example, it is preferable to use Cu or an alloy of Cu and Mo as such a material. By using these as a part of the material of the base substrate 20, the thermal conductivity is further increased.

The first conductive portion 23 is, for example, a conductive pad (that is, a connection portion, an electrical connection portion, or a terminal) formed on the surface of the base substrate body 21. The first conductive portion 23 forms part of the circuit formed on the base substrate body 21. The first conductive portion 23 is formed of a first conductive material 23m. For example, the first conductive portion 23 is metal plating formed on a part of the surface of the base substrate body 21 by the first conductive material 23m. As the first conductive material 23m, for example, Au, N
i, Cu, Pt, Sn, Pd or the like is used. In the present embodiment, the first conductive portion 23 is formed on the Ni plating (that is, the second plating layer) 23 on the Cu plating (that is, the first plating layer) 23A.
B, Au plating (that is, third plating layer) 23C is sequentially laminated (see FIG. 2)
. For example, the Cu plating 23 </ b> A is the base of the first conductive portion 23. The first conductive portion 23 is formed, for example, in a circular shape when the base substrate body 21 is viewed in plan. In the present embodiment, the first conductive material 23m is, for example, Au that forms the surface layer of the first conductive portion 23.

The first insulating portion 22 is, for example, a resist layer (for example, a solder resist) formed on the surface of the base substrate body 21 and is formed on the base substrate body 21 by the first insulating material 22m. For example, the first insulating portion 22 includes the first conductive portion 23 on the surface of the base substrate body 21.
It is formed by providing the first insulating material 22m in a part where no is provided. The first insulating portion 22 electrically insulates a portion on the base substrate 20 where the first conductive portion 23 is not provided. Therefore, the 1st insulating part 22 can prevent the short circuit between the some 1st electroconductive parts 23, for example. As the first insulating material 22m, for example, an acrylic resin, an oxetane resin, or an epoxy resin is used. In the present embodiment, the first insulating portion 22 is formed by providing an epoxy resin on the base substrate body 21 after the first conductive portion 23 is provided.

The semiconductor chip (for example, a bare chip) 30 includes a semiconductor chip main body 31, a second insulating part 32, and a plurality of second conductive parts 33. The semiconductor chip body 31 is, for example, GaN or S
These include HFET (Heterojunction F or ld Effect Transistor) using iC or the like, or LDMOS (Lateral Double Diffuse MOS Transistor) using Si or the like.
Other examples of the semiconductor chip body 31 include an optical semiconductor element, a piezoelectric element, a memory element, a microcomputer element, a sensor element, or a wireless communication element. The “semiconductor chip (or semiconductor chip body)” referred to in the present application is not limited to a semiconductor chip for a specific application as long as it is a component including an electric circuit.

The second conductive portion 33 is, for example, a conductive pad (that is, a connection portion, an electrical connection portion, or a terminal) formed on the surface of the semiconductor chip body 31. The second conductive portion 33 forms part of the circuit formed in the semiconductor chip body 31. The second conductive portion 33 is formed of the second conductive material 33m. For example, the second conductive portion 33 is formed of the semiconductor chip body 31 by the second conductive material 33m.
It is the metal plating formed in a part of surface of this. As the second conductive material 33m, for example, A
u, Ni, Cu or the like is used. In the present embodiment, the second conductive portion 33 is formed by sequentially laminating a Ni plating (ie, the second plating layer) 33B and an Au plating (ie, the third plating layer) 33C on the Cu plating (ie, the first plating layer) 33A. (See FIG. 2). For example. C
The u plating 33 </ b> A is the base of the second conductive portion 33. The second conductive portion 33 is formed, for example, in a circular shape when the semiconductor chip body 31 is viewed in plan. In this embodiment, the second
The conductive material 33m is, for example, Au that forms the surface layer of the second conductive portion 33. The second conductive material 33m may be the same as or different from the first conductive material 23m.

The second insulating portion 32 is, for example, a resist layer (for example, a solder resist) formed on the surface of the semiconductor chip body 31, and is formed on the semiconductor chip body 31 by the second insulating material 32m. For example, the second insulating portion 32 is formed by providing the second insulating material 32m in a portion of the surface of the semiconductor chip body 31 where the second conductive portion 33 is not provided. The second insulating part 32 electrically insulates the part where the second conductive part 33 is not provided on the semiconductor chip body 31, and can prevent a short circuit between the plurality of second conductive parts 33, for example. As the second insulating material 32m, for example, a polyimide resin or the like can be used. In the present embodiment, the second insulating portion 32 is provided after the second conductive portion 33 is provided by metal plating.
It is formed by providing a polyimide resin on the semiconductor chip body 31. The second insulating material 32m may be the same as or different from the first insulating material 22m.

The intermediate layer 50 is provided between the base substrate 20 and the semiconductor chip 30. For example,
The intermediate layer 50 electrically and physically connects the base substrate 20 and the semiconductor chip 30 (
For example, a connecting member to be joined. The intermediate layer 50 includes a third insulating part 51 and a plurality of third conductive parts 52.

The third conductive portion 52 is a first conductive portion 23 provided on the base substrate 20 in the intermediate layer 50.
And at a position corresponding to the second conductive portion 33 provided on the semiconductor chip 30.
The third conductive portion 52 is provided between the first conductive portion 23 of the base substrate 20 and the second conductive portion 33 of the semiconductor chip 30, and is sandwiched between the first conductive portion 23 and the second conductive portion 33. It is. The third conductive part 52 electrically connects the first conductive part 23 and the second conductive part 33.

The third conductive portion 52 includes a plurality of conductive particles 52a and a resin 52b (that is, a resin portion such as a synthetic resin) (see FIG. 2). The third conductive portion 52 has conductivity when a plurality of conductive particles 52 a included in the third conductive portion 52 are in contact with each other and are electrically connected to each other. In other words, the plurality of conductive particles 52 a electrically connect the first conductive portion 23 and the second conductive portion 33. The conductive particles 52a are particles that include a conductive material as a constituent material. The conductive particles 52a are, for example, elliptical spheres, rectangular parallelepipeds, scales, etc., and the shape is not limited. The conductive material contained in the conductive particles 52a can be selected as appropriate. For example, a metal having high conductivity is used for the conductive particles 52a. For example, Ag, Cu, Ni, or Ag is used as the conductive particles 52a. The conductive particles 52a may be particles made of a conductive material in which a plurality of the above metals are mixed. For example, the conductive particle 52a forms a layer of metal by coating another particle with a particle that includes one of the plurality of metals as a constituent material, and further forms a layer by coating with another metal. For example, particles having a plurality of metal layers may be used. As a guideline, the diameter of the conductive particles 52a is 2
It is not less than μm, preferably not less than 5 μm, not more than 50 μm, preferably not more than 30 μm.
For example, the conductive particles 52a may have a diameter of 2 μm to 30 μm or 5 μm to 50 μm depending on the material. For example, the content of the conductive particles 52a with respect to the entire mass of the third conductive portion 52 is
50-95 mass% may be sufficient. For example, the conductivity of the third conductive portion 52 is good in the above range. In the present embodiment, the third conductive portion 53 is formed of a silver paste in which Ag particles are used as the conductive particles 52a.

The resin 52b of the third conductive portion 52 can be selected as appropriate. For example, a resin that shrinks during curing is used. For example, an acrylic resin, an epoxy resin, a silicone resin, a phenol resin, an imide resin, an amide resin, an elastomer, or the like is used for the resin 52b of the third conductive portion 52. In the present embodiment, an epoxy resin is used for the resin 52 b of the third conductive portion 52. In the present embodiment, the third conductive portion 52 is a cured product obtained by curing a silver paste in which Ag particles as the conductive particles 52a are dispersed in the resin 52b. The third conductive portion 52 is formed, for example, in a circular shape when the intermediate layer 50 is viewed in plan.

The third insulating portion 51 is a first insulating portion 22 provided on the base substrate 20 in the intermediate layer 50.
, And at a position corresponding to the second insulating portion 32 provided on the semiconductor chip 30.
The third insulating portion 51 is provided between the first insulating portion 22 of the base substrate 20 and the second insulating portion 32 of the semiconductor chip 30, and is sandwiched between the first insulating portion 22 and the second insulating portion 32. It is. The third insulating portion 51 is joined to the first insulating portion 22 and the second insulating portion 32 by, for example, an anchor effect.

The third insulating part 51 is formed of a third insulating material 51m. For example, the third insulating portion 51 is formed in a portion of the intermediate layer 50 where the third conductive portion 52 is not provided.
The third insulating part 51 electrically insulates the plurality of third conductive parts 52. The third insulating portion 51 is
A short circuit between the plurality of electrical connection paths provided by the plurality of third conductive portions 52 can be prevented. For example, as the third insulating material 51m, various NCP (Non-Conductive Paste),
NCF (Non-Conductive Film) or the like is used. In the present embodiment, the third insulating portion 51 is formed of an epoxy resin. The third insulating material 51m is the first insulating material 22
m and the second insulating material 32m may be the same or different.

As described above, in the present embodiment, the first conductive portion 23 of the base substrate 20 and the second conductive portion 33 of the semiconductor chip 30 are electrically connected via the third conductive portion 52. That is, the base substrate 20 and the semiconductor chip 30 are stacked with the intermediate layer 50 interposed therebetween, whereby the first conductive portion 23 and the second conductive portion 33 are electrically connected via the third conductive portion 52. Has been.

Similarly, the first insulating portion 22 and the second insulating portion 32 are joined to the third insulating portion 51, respectively. That is, the base substrate 20 and the semiconductor chip 30 are overlapped with the intermediate layer 50 interposed therebetween, whereby the first insulating portion 22 and the second insulating portion 32 are joined via the third insulating portion 51. .

For example, the third conductive portion 52 and the third insulating portion 51 are supplied in a flexible state and are cured between the base substrate 20 and the semiconductor chip 30.

  Next, the molecular bonding layer 40 will be described.

  FIG. 2 is a cross-sectional view schematically showing the configuration of the semiconductor package 10.

As shown in FIGS. 1 and 2, the semiconductor package 10 of this embodiment includes a molecular bonding layer 40.
It has. The molecular bonding layer 40 is provided between at least one of the first conductive portion 23 and the second conductive portion 33 and the third conductive portion 52. From another viewpoint, the molecular bonding layer 40 is provided between at least one of the first insulating portion 22 and the second insulating portion 32 and the third insulating portion 51. The molecular bonding layer 40 is actually very thin, but for convenience of explanation, it is shown with a certain thickness in each figure.

As shown in FIG. 1, in the present embodiment, the molecular bonding layer 40 includes a first molecular bonding layer 41 and a second molecular bonding layer 41.
And a molecular bonding layer 42. The first molecular bonding layer 41 is provided on the surface of the first conductive portion 23 and the surface of the first insulating portion 22. The second molecular bonding layer 42 is provided on the surface of the second conductive portion 33 and the surface of the second insulating portion 32.

In other words, the first molecular bonding layer 41 is provided between the base substrate 20 and the intermediate layer 50. The first molecular bonding layer 41 includes a plurality of first portions 41 a provided between the plurality of first conductive portions 23 and the plurality of third conductive portions 52, the first insulating portion 22, the third insulating portion 51, and the like. And a second portion 41b provided between the two. The first portion 41 a of the first molecular bonding layer 41 is the first conductive portion 23.
And the third conductive part 52 are chemically bonded, and the first conductive part 23 and the third conductive part 52 are joined via the chemical bond. The second portion 41b of the first molecular bonding layer 41 is chemically bonded to both the first insulating portion 22 and the third insulating portion 51, and the first insulating portion 22 and the third insulating portion 51 are connected to each other through the chemical bond. Join. The first portion 41a and the second portion 41b are, for example, formed integrally with each other (that is, continuously).

On the other hand, the second molecular bonding layer 42 is provided between the semiconductor chip 30 and the intermediate layer 50. The second molecular bonding layer 42 includes a plurality of first portions 42 a provided between the plurality of second conductive portions 33 and the plurality of third conductive portions 52, the second insulating portion 32, the third insulating portion 51, and the like. And a second portion 42b provided between the two. The first portion 42a of the second molecular bonding layer 42 is chemically bonded to both the second conductive portion 33 and the third conductive portion 52, and the second conductive portion 33 and the third conductive portion 52 are connected through the chemical bond.
And join. The second portion 42 b of the second molecular bonding layer 42 includes the second insulating portion 32 and the third insulating portion 5.
The second insulating part 32 and the third insulating part 51 are joined to each other through the chemical bond. The first portion 42a and the second portion 42b are, for example, formed integrally with each other (that is, in a row).

  Hereinafter, the first molecular bonding layer 41 and the second molecular bonding layer 42 will be described in detail.

The molecular bonding layer 40 of the present embodiment bonds the intermediate layer 50 and the base substrate 20,
The intermediate layer 50 and the semiconductor chip 30 are joined. The molecular bonding layer 40 includes a molecular bonding body 40r (see FIG. 3) formed by a molecular bonding agent. The molecular bonding agent is a compound that can form a chemical bond (for example, a covalent bond) with, for example, a resin and a metal. Note that the term “covalent bond” in the present application broadly means a bond having a covalent bond, and includes a coordination bond and a quasicovalent bond. The term “molecular conjugate” as used in the present application refers to a substance that remains at the junction after the chemical bonding (ie, chemical reaction) of the molecular bonding agent.

Examples of the molecular bonding agent include compounds such as triazine derivatives. Examples of the triazine derivative include compounds represented by the following general formula (C1).

（式中、Ｒは、炭化水素基又は異種原子もしくは官能基が介在してもよい炭化水素基を
示し、Ｘは、水素原子又は炭化水素基を示し、Ｙは、アルコキシ基を示し、
Ｚは、塩を形成していてもよい、チオール基、アミノ基もしくはアジド基、又は異種原子
もしくは官能基が介在してもよい炭化水素基を示し、ｎ１は１〜３までの整数であり、ｎ
２は１〜２までの整数である。）
上記一般式（１）において、Ｒは、好ましくは炭素数１〜７の炭化水素基、又はこれら
の主鎖に窒素原子が介在するものを示す。Ｘは、炭素数１〜３の炭化水素基を示す。Ｙは
、炭素数１〜３のアルコキシ基を示す。ｎ１は、好ましくは３である。ｎ２は、好ましく
は２である。Ｚは、好ましくは塩を形成していてもよい、チオール基、アミノ基もしくは
アジド基、又はアルキル基を示す。塩を形成するカチオンの元素としては、アルカリ金属
が好ましく、中でもＬｉ、Ｎａ、Ｋ又はＣｓがさらに好ましい。なお、ｎ２が２である場
合は、少なくとも１つのＺは、塩を形成している、チオール基、アミノ基又はアジド基を
示すことが好ましい。 (C1)

(In the formula, R represents a hydrocarbon group or a hydrocarbon group in which a hetero atom or a functional group may intervene, X represents a hydrogen atom or a hydrocarbon group, Y represents an alkoxy group,
Z represents a thiol group, an amino group or an azide group which may form a salt, or a hydrocarbon group which may be intervened by a hetero atom or a functional group, n1 is an integer from 1 to 3, n
2 is an integer from 1 to 2. )
In the above general formula (1), R preferably represents a hydrocarbon group having 1 to 7 carbon atoms, or a group in which a nitrogen atom is interposed in these main chains. X shows a C1-C3 hydrocarbon group. Y shows a C1-C3 alkoxy group. n1 is preferably 3. n2 is preferably 2. Z preferably represents a thiol group, an amino group or an azide group, or an alkyl group, which may form a salt. As an element of the cation forming the salt, an alkali metal is preferable, and Li, Na, K, or Cs is more preferable among them. In addition, when n2 is 2, it is preferable that at least 1 Z shows the thiol group, amino group, or azide group which forms the salt.

At least a part of the first part 41 a of the first molecular bonding layer 41 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 41) is chemically bonded to the first conductive material 23 m of the first conductive part 23. (For example, covalent bond). Similarly, at least a part of the first part 41a of the first molecular bonding layer 41 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 41) is the third part.
It is chemically bonded (for example, covalently bonded) to the resin 52b of the conductive portion 52. Further, at least a part of the first part 41 a of the first molecular bonding layer 41 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 41) is chemically bonded to the conductive particles 52 a of the third conductive part 52. (For example, covalent bond)
doing. Accordingly, the first portion 41a of the first molecular bonding layer 41 is connected to the first conductive portion 23 and the third portion.
The conductive portion 52 is joined.

  FIG. 3 is a diagram schematically illustrating an example of the composition of the molecular bonding layer 40.

As illustrated in FIG. 3, the first molecular bonding layer 41 includes, for example, a plurality of molecular bonding bodies 40r.
In the molecular conjugate 40r, the above-described molecular junction agent is an object to be joined (first member and second member).
) And a molecular bonding agent residue formed by chemical reaction. For example, the molecular conjugate 40r includes a molecular junction residue formed by the chemical reaction of the molecular junction agent with the first conductive portion 23 and the third conductive portion 52. The molecular bonding agent residue is, for example, a triazine dithiol residue as shown in FIG. The molecular conjugate 40r may include “S” and “Z” in FIG. An example of “Z” in FIG. 3 is an aminohydrocarbylsiloxy group.

For example, at least one molecular conjugate 40r included in the first molecular junction layer 41 is chemically bonded (for example, covalently bonded) to both the first conductive material 23m of the first conductive portion 23 and the resin 52b of the third conductive portion 52. )doing. Further, at least one other molecular conjugate 40r included in the first molecular junction layer 41 includes the first conductive material 23m of the first conductive portion 23 and the conductive particles 52 of the third conductive portion 52.
It is chemically bonded (for example, covalent bond) to both a.

As shown in FIG. 1, at least a part of the second portion 41 b of the first molecular bonding layer 41 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 41) 1 It is chemically bonded (for example, covalently bonded) to the insulating material 22m. Similarly, at least a part of the second part 41 b of the first molecular bonding layer 41 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 41) is the third insulating material 51 m of the third insulating part 51. And a chemical bond (for example, a covalent bond). Thereby, the second portion 41 b of the first molecular bonding layer 41 joins the first insulating portion 22 and the third insulating portion 51.

For example, at least one molecular assembly 40r included in the first molecular bonding layer 41 is chemically bonded to both the first insulating material 22m of the first insulating part 22 and the third insulating material 51m of the third insulating part 51 ( (For example, covalent bond).

Similarly, at least a part of the first portion 42 a of the second molecular bonding layer 42 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 42) is the second conductive material 33 of the second conductive portion 33.
It is chemically bonded to m (for example, covalent bond). Similarly, the first portion 42 of the second molecular bonding layer 42.
at least a part of a (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 42)
Are chemically bonded (for example, covalently bonded) to the resin 52b of the third conductive portion 52. Further, at least a part of the first part 42 a of the second molecular bonding layer 42 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 42) is chemically bonded to the conductive particles 52 a of the third conductive part 52. (For example, covalent bond). As a result, the first portion 42a of the second molecular bonding layer 42 becomes the second conductive portion 3.
3 and the third conductive portion 52 are joined.

For example, at least one molecular conjugate 40r included in the second molecular junction layer 42 is chemically bonded (for example, covalently bonded) to both the second conductive material 33m of the second conductive portion 33 and the resin 52b of the third conductive portion 52. )doing. In addition, at least one other molecular conjugate 40r included in the second molecular junction layer 42 includes the second conductive material 33m of the second conductive portion 33 and the conductive particles 52 of the third conductive portion 52.
It is chemically bonded (for example, covalent bond) to both a.

At least a part of the second portion 42 b of the second molecular bonding layer 42 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 42) is chemically bonded to the second insulating material 32 m of the second insulating portion 32. (For example, covalent bond). Similarly, at least a part of the second part 42b of the second molecular bonding layer 42 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 42) is the third part.
It is chemically bonded (for example, covalently bonded) to the third insulating material 51m of the insulating portion 51. This
The second part 42 b of the second molecular bonding layer 42 joins the second insulating part 32 and the third insulating part 51.

For example, at least one molecular assembly 40r included in the second molecular bonding layer 42 is chemically bonded to both the second insulating material 32m of the second insulating portion 32 and the third insulating material 51m of the third insulating portion 51 ( (For example, covalent bond).

In other words, the molecular bonding agent is the first conductive portion in the first conductive portion 23 provided with the first molecular bonding layer 41 or the second conductive portion 33 provided with the second molecular bonding layer 42. 2
3 or the chemical composition (for example, covalent bond) with the constituent material included in the second conductive portion 33. Therefore, the intermediate layer 50, the base substrate 20, and the semiconductor chip 30 are firmly adhered.

The adhesion strength between the intermediate layer 50 and the base substrate 20 or between the intermediate layer 50 and the semiconductor chip 30 is preferably 2 MPa or more, more preferably 5 MPa or more, and 6 MPa or more. Is more preferable, and more preferably 10 MPa or more. Moreover, it is preferable that the destruction mode at the time of the measurement is a mode in which the intermediate layer 50 is broken rather than the bonding interface. The adhesion strength can be measured by, for example, a die shear test. As a specific example of the tensile test, MIL-STD 883G, that is, C-60749-
19, or a method defined in EIAJ ED-4703 or the like.

The molecular bonding agent is a resin 5 of the first conductive material 23m or the second conductive material 33m and the third conductive part 52.
The first conductive part 23 or the second conductive part 33 and the resin 52b of the third conductive part 52 are joined by being covalently bonded to 2b. Since the molecular bonding agent described above can be chemically bonded (for example, covalently bonded) to both the conductive material and the resin, the first conductive portion 23 or the second conductive portion 33 and the resin 52b of the third conductive portion 52 are in close contact with each other. Can be joined with high strength. In addition, the molecular bonding agent is chemically bonded (for example, covalently bonded) to the first conductive material 23m or the second conductive material 33m and the resin 52b of the third conductive portion 52, whereby the first conductive portion 23 or the second conductive portion 33. And the third conductive part 52 are close to each other, and it is easy to secure a stable electrical connection between the conductive particles 52a of the third conductive part 52 and the first conductive part 23 or the second conductive part 33. Become.

That is, when there is no molecular bonding layer, the resin 52 with respect to the size of the semiconductor package 10 is used.
When the area occupied by b increases, the intermediate layer 50 may be easily peeled off from the first conductive portion 23 or the second conductive portion 33 due to the shrinkage of the resin 52b. On the other hand, in this embodiment, the molecular bonding layer 40 is chemically bonded (for example, covalently bonded) to at least one of the first conductive material 23m and the second conductive material 33m. Conductive portion 23 and second conductive portion 3
3 is hardly peeled off. Therefore, it is suppressed that the adhesive force is reduced and the electrical connectivity is reduced.

For example, the first molecular bonding layer 41 provided on the surface of the first conductive portion 23 is made of the first conductive material 23.
m and the resin 52b of the third conductive portion 52 are chemically bonded (for example, covalently bonded), and the second molecular bonding layer 42 provided on the surface of the second conductive portion 33 is connected to the second conductive material 33m and the third conductive material. Part 52
When the resin 52b is chemically bonded (for example, covalently bonded), the first conductive portion 23 and the third conductive portion 5
Since the distance between the second conductive portion 33 and the second conductive portion 33 is reduced by the molecular bonding agent, the conductive particles 52a, the first conductive material 23m, and the second conductive material 33m are electrically connected more satisfactorily. The electrical connection between the substrate 20 and the semiconductor chip 30 is further ensured stably.

In the present embodiment, the conductive particles 52 a of the third conductive portion 52 are chemically bonded (for example, covalently bonded) to at least one of the first molecular bonding layer 41 and the second molecular bonding layer 42. Conductive particle 52a
And the molecular bonding layer 40 are chemically bonded (for example, covalently bonded), so that adhesion and conductivity are further ensured.

In the present embodiment, one molecule (for example, molecular conjugate 40r) of the molecular bonding agent in the first molecular bonding layer 41 is chemically bonded (for example, shared) to both the resin 52b of the third conductive portion 52 and the first conductive material 23m. Are combined). In addition, one molecule (for example, molecular conjugate 40r) of the molecular bonding agent in the second molecular bonding layer 42 is chemically bonded (for example, covalently bonded) to both the resin 52b of the third conductive portion 52 and the second conductive material 33m. ing. First conductive material 23m through one molecule of molecular bonding agent
Alternatively, the second conductive material 33m and the resin 52b are joined to further increase the adhesion and conductivity. In the present embodiment, one molecule (for example, molecular conjugate 40r) of the molecular bonding agent in the first molecular bonding layer 41 is chemically bonded (for example, shared) to both the conductive particles 52a of the third conductive portion 52 and the first conductive material 23m. Are combined). Further, 1 of the molecular bonding agent in the second molecular bonding layer 42
The molecules (for example, the molecular conjugate 40r) are formed by the conductive particles 52a of the third conductive portion 52 and the second conductive material 3
Both 3m are chemically bonded (for example, covalently bonded). With this configuration, the base substrate 20
The electrical connection between the semiconductor chip 30 and the semiconductor chip 30 is further ensured.

Each of the first molecular bonding layer 41 and the second molecular bonding layer 42 may have a thickness of 1 nm to 20 nm. The covering density of the molecular bonding agent with respect to the area of the first conductive part 23 or the second conductive part 33 (that is, the coating density of the molecular bonding layer 40) is 20% or more and 80% or less. The film density is 30
% Or more and 70% or less, more preferably 40% or more and 60% or less. In addition, when the coating density of the molecular bonding agent is 100 area%, it is defined that the molecular bonding agent is theoretically closest packed to the surface of the object to be coated. The coating density of the molecular bonding agent is
It can obtain | require from the measurement result by a X ray diffraction method.

The coating density of the molecular bonding agent on the first conductive part 23 or the second conductive part 33 (that is, the molecular bonding layer 4
When the coating density of 0 is equal to or higher than the lower limit, the adhesion between the first conductive portion 23 or the second conductive portion 33 and the third conductive portion 52 can be further increased. Further, the first conductive portion 23 or the second conductive portion 3
When the coating density of the molecular bonding agent with respect to 3 (that is, the coating density of the molecular bonding layer 40) is equal to or less than the upper limit, electrical connection between the first conductive portion 23 or the second conductive portion 33 and the third conductive portion 52 is established. It can be secured easily.

  4 is a cross-sectional view taken along line F4-F4 of the molecular bonding layer 40 shown in FIG.

As shown in FIG. 4, the molecular conjugate 40r of the molecular junction layer 40 is not completely uniformly dispersed, for example. The conductive particles 52a of the third conductive portion 52 are in contact with the first conductive portion 23 or the second conductive portion 33 at a position between the plurality of molecular conjugates 40r (that is, a region where the molecular conjugate 40r does not exist). As a result, the conductive particles 52a of the third conductive portion 52 are transferred to the first conductive portion 23 or the second conductive portion 33.
And electrically connected.

In the present embodiment, the first molecular bonding layer 41 extends to the first insulating part 22 in addition to the first conductive part 23. In addition to the second conductive portion 33, the second molecular bonding layer 42 extends to the second insulating portion 32. That is, the first molecular bonding layer 41 including the molecular bonded body 40 r is provided on the surface of the first insulating portion 22. The surface of the second insulating part 32 includes a second molecular assembly 40r.
A molecular bonding layer 42 is provided. At least a part of the first molecular bonding layer 41 is chemically bonded (for example, covalently bonded) to the first insulating material 22 m included in the first insulating portion 22. At least a part of the second molecular bonding layer 42 is chemically bonded (for example, covalently bonded) to the second insulating material 32 m included in the second insulating portion 32. At least a part of the first molecular bonding layer 41 or the second molecular bonding layer 42 is chemically bonded (for example, covalently bonded) to the third insulating material 51 m included in the third insulating portion 51. A molecular bonding layer 40, a first insulating material 22m and / or a second insulating material 32m, and a third
By being chemically bonded (for example, covalently bonded) to the insulating material 51m, adhesion between the first insulating portion 22 and / or the second insulating portion 32 and the third insulating portion 51 is increased. 1st insulation part 22, 2nd
By increasing the adhesion between the insulating part 32 and the third insulating part 51, the mutual adhesion between the first, second, and third conductive parts 23, 33, and 52 is also increased, and the conductivity is increased. Also contribute.

For example, at least a part of the first molecular bonding layer 41 and the second molecular bonding layer 42 is a monomolecular film. In the present embodiment, all of the first molecular bonding layer 41 and the second molecular bonding layer 42 are monomolecular films. In the portion of the first molecular bonding layer 41 and the second molecular bonding layer 42 formed in a monomolecular film shape, one molecular bonding agent (that is, the molecular bonding body 40r) is both the first conductive material 23m and the resin 52b. Are chemically bonded (for example, covalently bonded). Alternatively, one molecule of the molecular bonding agent is chemically bonded (for example, covalently bonded) to both the second conductive material 33m and the resin 52b. Therefore,
The adhesion between the first conductive portion 23 and the second conductive portion 33 and the intermediate layer 50 can be further increased.
In addition, the electrical connection between the first conductive portion 23 and the second conductive portion 33 and the intermediate layer 50 can be easily ensured. Furthermore, the increase in the thickness of the semiconductor package 10 due to the first molecular bonding layer 41 and the second molecular bonding layer 42 is minimized.

The portion occupying a large area of the first molecular bonding layer 41 and the second molecular bonding layer 42 is preferably a monomolecular film. For example, a portion corresponding to 30 to 100% of the area covered by the first molecular bonding layer 41 and the second molecular bonding layer 42 on the surface of the first conductive portion 23 or the second conductive portion 33 is a monomolecular film. More preferably. Since the area of the monomolecular film is in this condition, the first
Adhesion and electrical connection by the molecular bonding layer 41 and the second molecular bonding layer 42 are further ensured.

For example, an insulating part such as an epoxy resin is difficult to be joined to a conductor part such as Au plating as it is. For this reason, when the 1st electroconductive part 23 and the 2nd electroconductive part 33 are large area conductor patterns, the adhesive force of a large area conductor pattern and an insulating part becomes easy to fall. However, according to the configuration of the present embodiment, the insulating portion can be adhered to the large-area conductor pattern by the molecular bonding layer 40. The “large-area conductor pattern” referred to in the present application refers to, for example, a heat-dissipating conductor pattern (for example, a heat-dissipating pad), a ground pattern (for example, a ground pad) electrically connected to the ground of the semiconductor chip 30, pattern(
For example, a power pad). The shape of the conductor pattern is not particularly limited, and may be polygonal or circular. When the conductor pattern is polygonal, one side of the conductor pattern is larger than the thickness of the semiconductor chip 30, for example. Similarly, when the conductor pattern is circular, the diameter of the conductor pattern is larger than the thickness of the semiconductor chip 30, for example. From another viewpoint, one side (or diameter) of the conductor pattern is longer than, for example, half the length of one side of the semiconductor chip 30.

  Next, a method for manufacturing the semiconductor package 10 of this embodiment will be described.

  FIG. 5 is a cross-sectional view showing an example of the flow of the manufacturing method of the semiconductor package 10.

In the present embodiment, first, a base substrate 20 including a base substrate body 21, a first insulating portion 22, and a first conductive portion 23 is prepared ((a) in FIG. 5). As a means for providing the first insulating portion 22 and the first conductive portion 23 on the surface of the base substrate body 21, a conventionally known technique can be used.

Then, the surface of the first conductive portion 23 is covered with a molecular bonding agent (that is, the first conductive portion 23
The first molecular bonding layer 41 is formed by applying a molecular bonding agent to the surface of (in FIG.
b)). The “molecular bonding layer” in the description of the manufacturing method of the present application is chemically reacted (
In addition to a molecular bonding layer (for example, chemically bonded), it may mean a molecular bonding layer at least partially before a chemical reaction (for example, not chemically bonded). The molecular bonding layer at least partially before the chemical reaction may be read as “molecular bonding agent”.

The formation of the first molecular bonding layer 41 is performed, for example, by applying a molecular bonding agent solution containing the above-described molecular bonding agent to the surface of the base substrate 20. Examples of the method for applying the molecular bonding agent solution include a method in which the base substrate 20 is immersed in the molecular bonding agent solution, or a method in which the molecular bonding agent solution is sprayed on the base substrate 20.

When coating the surface of the base substrate 20 with a molecular bonding agent, it is preferable to use a molecular bonding agent solution. The molecular bonding agent solution can be prepared by dissolving the above-described molecular bonding agent in a solvent.

Examples of the solvent include alcohols such as methanol, ethanol, isopropanol, ethylene glycol, propylene glycol, cellosolve and carbitol; ketones such as acetone, methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as benzene, toluene and xylene; hexane Aliphatic hydrocarbons such as ethyl, octane, decane, dodecane and octadecane; esters such as ethyl acetate, methyl propionate and methyl phthalate; and ethers such as tetrahydrofuran, ethyl butyl ether and anisole. Moreover, the mixed solvent which mixed these solvents can also be used.

The concentration of the molecular bonding agent solution is 0.001 for the molecular bonding agent with respect to the total mass of the molecular bonding agent solution.
The content is preferably from 1% by mass to 1% by mass, and more preferably from 0.01% by mass to 0.1% by mass. When the concentration of the molecular bonding agent solution is equal to or higher than the lower limit, the coating density of the molecular bonding agent can be increased and the adhesion between the members can be further increased. When the concentration of the molecular bonding agent solution is equal to or lower than the above upper limit value, it is difficult to contain a molecular bonding agent that does not chemically bond (for example, covalent bonding). Therefore, the first conductive portion 23 or the second conductive portion 33 and the third conductive portion 52 Can be easily secured. In addition, an increase in the thickness of the semiconductor package 10 due to the first molecular bonding layer 41 can be suppressed.

The prepared molecular bonding agent solution is applied to the surface of the first conductive portion 23 in the base substrate 20. By leaving the base substrate 20 coated with the molecular bonding agent solution, the first conductive portion 23 is placed.
The chemical bond (for example, covalent bond) between the first conductive material 23m and the molecular bonding agent is promoted.
Furthermore, an operation of applying energy (for example, heat or light (for example, ultraviolet rays)) to the first molecular bonding layer 41 may be performed. By the operation of applying energy, the molecular bonding agent and the first conductive material 23
A chemical bond (eg, a covalent bond) with m is further promoted. For example, heat can be used as the energy. When using heat, heating at about 150 ° C. to 200 ° C. for 5 minutes or more,
Preferably 60 minutes or longer, more preferably 80 minutes or longer, 120 minutes or longer, preferably 2
It can be performed for 40 minutes or less. For example, depending on the material of the molecular bonding layer, 5 minutes to 120 minutes, 6 minutes
You may select from 0 minute-240 minutes, Preferably it is 80 minutes-240 minutes. Thereafter, the base substrate 20 may be washed and then dried to remove excess molecular bonding agent or solution. The cleaning liquid can be selected from, for example, the same solvents as those described above used for the molecular bonding agent solution. Drying can be performed at 150 to 200 ° C. By these operations, the first conductive portion 2
Thus, the base substrate 20 whose surface is coated with a molecular bonding agent (for example, the molecular bonded body 40r) is obtained.

The first conductive material 23m of the first conductive portion 23 covered with the molecular bonding agent forms a chemical bond (that is, a covalent bond) with the molecular bonding agent (for example, the molecular bonded body 40r). That is, the first molecular bonding layer 41 including a molecular bonding agent (for example, molecular bonded body 40r) chemically bonded (that is, covalently bonded) to the first conductive material 23m included in the first conductive portion 23 is formed on the first conductive portion 23. Formed on the surface.

The molecular bonding agent solution may be applied not only to the surface of the first conductive part 23 but also to the surface of the first insulating part 22. By covering both the surface of the first conductive portion 23 and the surface of the first insulating portion 22 with a molecular bonding agent, the first conductive material 23m included in the first conductive portion 23 and the first conductive portion 23 included in the first insulating portion 22 are covered. The molecular bonding layer 40 including a molecular bonding agent (for example, a molecular bonded body 40r) chemically bonded (that is, covalently bonded) to the insulating material 22m is formed on both the surface of the first conductive portion 23 and the surface of the first insulating portion 22. Can be formed.

The thickness of the first molecular bonding layer 41 can be adjusted by conditions such as the concentration and the coating amount of the molecular bonding agent solution, and the time and number of times of cleaning.

Similarly, a semiconductor chip 30 including a semiconductor chip body 31, a second insulating part 32, and a second conductive part 33 is prepared ((c) in FIG. 5). And the surface of the second conductive portion 33 and the second
By covering the surface of the insulating part 32 with a molecular bonding agent (that is, the surface of the second conductive part 33 and the second
The second molecular bonding layer 42 is formed by applying a molecular bonding agent to the surface of the insulating portion 32 (see FIG.
(D) in FIG. In the present embodiment, the second molecular bonding layer 42 is formed by applying the molecular bonding agent solution described above to the surface of the semiconductor chip 30 in the same manner as the operation performed on the base substrate 20. You may perform the operation similar to the above-mentioned, operation which gives energy, washing | cleaning, and drying. In the present embodiment, in this process, the molecular bonding agent chemically bonds (for example, covalently bonds) with the second conductive material 33m and the second insulating material 32m. As a result, the surface of the second conductive portion 33 and the second insulating portion 32 is covered with the molecular bonding agent, and the second conductive material 33m included in the second conductive portion 33 is covered.
And a second molecular bonding layer 42 containing a molecular bonding agent (for example, a molecular bonded body 40r) chemically bonded (for example, covalently bonded) to the second insulating material 32m included in the second insulating portion 32, It is formed on both the surface and the surface of the second insulating portion 32.

Next, the paste P including the resin 52b and the conductive particles 52a, which are constituent materials of the third conductive portion 52, is placed on the first conductive portion 23 on the base substrate 20 ((e) in FIG. 5). Thereby, at least a part of the first molecular bonding layer 41 (that is, the molecular bonding agent forming the first molecular bonding layer 41) is brought into contact with the resin 52b and the conductive particles 52a of the third conductive portion 52. Thereby, the resin 52b and the conductive particles 52a of the third conductive portion 52 and the first molecular bonding layer 41 may be chemically bonded (for example, covalently bonded). Furthermore, in the present embodiment, a third material that is a constituent material of the third insulating portion 51 is used.
The insulating material 51 m is placed on the first insulating portion 22 on the base substrate 20. Thereby, at least a part of the first molecular bonding layer 41 (that is, the molecular bonding agent forming the first molecular bonding layer 41) is brought into contact with the third insulating material 51m of the third insulating portion 51. Thereby, the third insulating material 51m of the third insulating portion 51 and the first molecular bonding layer 41 may be chemically bonded (for example, covalently bonded).

Furthermore, in this embodiment, after placing the third insulating material 51m and the paste P on the base substrate 20, the base substrate 20 is placed on the heated metal stage. The subsequent operation is performed on the metal stage in order to apply preheating prior to the curing of the resin 52b and the operation of applying energy to the molecular bonding layer 40, which will be described later. Specifically, a metal stage having a temperature of 150 ° C. to 170 ° C. is prepared, and the base substrate 20 is placed on the metal stage for 10 seconds to 240 seconds.

Next, the semiconductor chip 30 is provided on the paste P and the third insulating material 51m. That is, the semiconductor chip 30 is placed so that the second conductive portion 33 is located on the paste P and the second insulating portion 32 is located on the third insulating portion 51 ((f) in FIG. 5). That is, the first conductive part 2
3 and the second conductive part 33, the third conductive part 52 is sandwiched between the resin 52 b of the third conductive part 52.
In addition, at least a part of the second molecular bonding layer 42 (that is, the molecular bonding agent forming the second molecular bonding layer 42) is brought into contact with the conductive particles 52a. Thereby, the resin 52b and the conductive particles 52a of the third conductive portion 52 and the second molecular bonding layer 42 may be chemically bonded (for example, covalently bonded). Further, by sandwiching the third insulating portion 51 between the first insulating portion 22 and the second insulating portion 32, the second molecular bonding layer 42 (that is, the second molecular layer) is formed on the third insulating material 51m of the third insulating portion 51. At least a part of the molecular bonding agent that forms the bonding layer 42 is brought into contact. Accordingly, the third insulating material 51m of the third insulating portion 51 is obtained.
And the second molecular bonding layer 42 may be chemically bonded (for example, covalently bonded).

In this embodiment, the semiconductor chip 30 is heated to a higher temperature while the semiconductor chip 30 is heated.
Is pressed toward the base substrate 20 to make the semiconductor package 10 have an arbitrary thickness. For example, the pressing is performed by using the pressing member from the semiconductor chip 30 on the semiconductor package 10.
Press. As conditions for heating to high temperature, the metal stage and the pressing member are 180 ° C. to 20 ° C.
Increase the temperature to 0 ° C. By this operation, the third insulating material 51m is cured at the portion sandwiched between the first insulating portion 22 and the second insulating portion 32, and the third insulating portion 51 is formed. Resin 52b is first
It hardens | cures in the site | part pinched by the electroconductive part 23 and the 2nd electroconductive part 33, and the 3rd electroconductive part 52 is formed.
The intermediate layer 50 is formed by the third insulating portion 51 and the third conductive portion 52.

By this operation, energy by heat is further applied to the first molecular bonding layer 41 and the second molecular bonding layer 42, and chemical bonding (for example, covalent bonding) between the resin 52 b and the conductive particles 52 a and the molecular bonding agent is promoted. The For example, a chemical bond (for example, a covalent bond) between the resin 52b and the conductive particles 52a included in the third conductive portion 52 and the molecular bonding agent included in the first molecular bonding layer 41
Is promoted. The chemical bond (for example, covalent bond) between the third insulating material 51m included in the third insulating part 51 and the molecular bonding agent included in the first molecular bonding layer 41 is promoted. The third conductive portion 5
2 promotes chemical bonding (for example, covalent bonding) between the resin 52b and the conductive particles 52a included in 2 and the molecular bonding agent included in the second molecular bonding layer 42. Chemical bond (for example, covalent bond) between the third insulating material 51m included in the third insulating portion 51 and the molecular bonding agent included in the second molecular bonding layer 42.
Is promoted. As a result, the molecular bonding agent is composed of the first and second conductive materials 23m and 33m, the resin 5
2b and the conductive particles 52a are chemically bonded (for example, covalently bonded), and the first insulating material 2
2m, the second insulating material 32m, and the third insulating material 51m are chemically bonded (for example, covalently bonded).

The chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed without applying energy such as heat or light. Alternatively, chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed by applying energy such as heat or light.

(Second Embodiment)
Next, a second embodiment will be described with reference to FIGS. This embodiment is the first
The second embodiment is different from the first embodiment in that the molecular bonding layer 40 is not provided at a position corresponding to the conductive portion 23 and the second conductive portion 33. Configurations other than those described below are the same as those in the first embodiment.

  FIG. 6 is a cross-sectional view showing the semiconductor package 10 of the second embodiment.

As shown in FIG. 6, in the first molecular bonding layer 41 of the present embodiment, the first molecular bonding layer 41 does not exist at least at a part of the boundary between the first conductive portion 23 and the third conductive portion 52. A bonding layer non-existing portion (ie, a bonding layer non-existing region) 61 is formed. For example, the first molecular bonding layer 41 forms the bonding layer non-existing portion 61 at the entire boundary between the first conductive portion 23 and the third conductive portion 52.
The conductive particles 52 a of the third conductive portion 52 are provided in the bonding layer nonexisting portion 61 of the first molecular bonding layer 41 and are in contact with the surface of the first conductive portion 23. Thereby, the 3rd electroconductive part 52 and the 1st electroconductive part 23 are electrically connected still more reliably.

Similarly, the second molecular bonding layer 42 of the present embodiment has no bonding layer in which the second molecular bonding layer 42 does not exist at least at a part of the boundary between the second conductive portion 33 and the third conductive portion 52. Part 61 is formed. For example, the second molecular bonding layer 42 forms the bonding layer nonexisting portion 61 at the entire boundary between the second conductive portion 33 and the third conductive portion 52. The conductive particles 52a of the third conductive portion 52 are
It is provided in the bonding layer non-existing portion 61 of the second molecular bonding layer 42 and is in contact with the surface of the second conductive portion 33. Thereby, the 3rd electroconductive part 52 and the 2nd electroconductive part 33 are electrically connected more reliably.

  FIG. 7 is a cross-sectional view taken along the line F7-F7 of the molecular bonding layer 40 shown in FIG.

As shown in FIG. 7, the molecular conjugate 40r of the molecular junction layer 40 of the present embodiment is relatively uniformly dispersed. According to such a molecular bonding layer 40, as compared with the first embodiment, between the first insulating part 22 and the third insulating part 51 and between the second insulating part 32 and the third insulating part 51. It is possible to increase the bonding strength. On the other hand, if the molecular conjugate 40r is relatively uniformly distributed between the first conductive portion 23 and the third conductive portion 52 and between the second conductive portion 33 and the third conductive portion 52, the first The conductive particles 52a of the three conductive portions 52 are obstructed by the molecular conjugate 40r and are less likely to contact the first conductive portion 23 and the second conductive portion 33. For this reason, there is a possibility that the electrical connection strength between the first conductive portion 23 and the third conductive portion 52 and between the second conductive portion 33 and the third conductive portion 52 is weakened.

Therefore, in the present embodiment, the molecular bonding layer 40 has at least one of the boundary between the first conductive part 23 and the third conductive part 52 and the boundary between the second conductive part 33 and the third conductive part 52. A bonding layer non-existing portion 61 in which the molecular bonding layer 40 does not exist is formed in at least a part thereof. The conductive particles 52a of the third conductive portion 52 are provided in the bonding layer non-existing portion 61, and the first conductive portion 23 or the second conductive portion 52a.
It is in contact with the conductive portion 33. Thereby, between the 1st electroconductive part 23 and the 3rd electroconductive part 52, or 2nd
The electrical connection strength between the conductive portion 33 and the third conductive portion 52 is increased. The molecular bonding layer 40 of the present embodiment is not limited to the one in which the molecular bonding bodies 40r as shown in FIG. 7 are relatively uniformly dispersed, and the molecular bonding bodies 40r as shown in FIG. It may be distributed.

FIG. 8 is a cross-sectional view showing an example of the flow of the manufacturing method of the semiconductor package 10 of the present embodiment. Below, only a different part is demonstrated with respect to 1st Embodiment.

In the present embodiment, before the molecular bonding agent is applied to the base substrate 20, a mask (for example, a resist) 70 is provided on the surface of the base substrate 20 ((b1) in FIG. 8). For example, the mask 70 is provided so as to cover the first conductive portion 23. The mask 70 may be preferably formed of, for example, a fluorine-based material to which the molecular bonding agent is difficult to stick. However, mask 7
The material of 0 is not particularly limited.

  FIG. 9 is a plan view showing the mask 70 of the present embodiment.

As illustrated in FIG. 9, the mask 70 includes, for example, a plurality of covers 71 and a plurality of connecting portions 72. The plurality of covers 71 are provided corresponding to the plurality of first conductive portions 23,
The conductive portion 23 is covered. The plurality of connecting portions 72 extend between the plurality of covers 71 and connect the plurality of covers 71. Thereby, the mask 70 having the plurality of covers 71 can be integrally attached to or removed from the base substrate 20.

Next, a molecular bonding agent is applied to the surface of the first insulating portion 22 of the base substrate 20 with the plurality of first conductive portions 23 of the base substrate 20 covered with the mask 70 (that is, the first insulating portion 22). Is coated with a molecular bonding agent) ((b2) in FIG. 8). Thereafter, the mask 70 is removed from the base substrate 20 ((b3) in FIG. 8). Accordingly, the first molecular bonding layer 41 can be formed in the first insulating portion 22 and the bonding layer nonexisting portion 61 can be formed in the first conductive portion 23.

Similarly, before the molecular bonding agent is applied to the semiconductor chip 30, a mask (for example, a resist) 70 is provided on the surface of the semiconductor chip 30 ((d1) in FIG. 8). For example, mask 70
Is provided so as to cover the second conductive portion 33. For example, the mask 70 includes a plurality of covers 71 and a plurality of connecting portions 72, similarly to the mask 70 shown in FIG. 9. Multiple covers 7
1 is provided corresponding to the plurality of second conductive portions 33 and covers the plurality of second conductive portions 33.

Next, a molecular bonding agent is applied to the surface of the second insulating portion 32 of the semiconductor chip 30 in a state where the plurality of second conductive portions 33 of the semiconductor chip 30 are covered with the mask 70 (that is, the second insulating portion 32). Is coated with a molecular bonding agent) ((d2) in FIG. 8). Thereafter, the semiconductor chip 3
The mask 70 is removed from 0 ((d3) in FIG. 8). Thereby, the second molecular bonding layer 42 can be formed in the second insulating portion 32, and the bonding layer nonexisting portion 61 can be formed in the second conductive portion 33.

  The subsequent steps are the same as those in the first embodiment.

(Third embodiment)
Next, a third embodiment will be described with reference to FIGS. This embodiment
The second embodiment is different from the second embodiment in that a bonding layer non-existing portion 61 is formed corresponding to a part of the first conductive part 23 and a part of the second conductive part 33. The configurations other than those described below are the same as those in the second embodiment.

  FIG. 10 is a cross-sectional view showing the semiconductor package 10 of the present embodiment.

As shown in FIG. 10, in this embodiment, the first molecular bonding layer 41 includes the first conductive portion 23 and the third conductive portion 23.
A bonding layer nonexistent portion 61 is formed at a part of the boundary with the conductive portion 52. In other words,
The first molecular bonding layer 41 is provided at a part of the boundary between the first conductive part 23 and the third conductive part 52, and joins the first conductive part 23 and the third conductive part 52. As a result, both the electrical connection strength and the physical connection strength between the first conductive portion 23 and the third conductive portion 52 are increased.

  FIG. 11 is an enlarged sectional view showing the periphery of the first conductive portion 23.

As shown in FIG. 11, the conductive particles 52 a included in the third conductive portion 52 are formed of the bonding layer non-existing portion 6.
1 is in contact with the first conductive portion 23. In other words, the conductive particles 52 a included in the third conductive portion 52 are in contact with the first conductive portion 23 in a region where the first molecular bonding layer 41 is not provided. Thereby, the electrical connection strength between the conductive particles 52a and the first conductive portion 23 is more reliably ensured.

Similarly, in the present embodiment, the second molecular bonding layer 42 forms the bonding layer nonexistent portion 61 at a part of the boundary between the second conductive portion 33 and the third conductive portion 52. In other words, the second molecular bonding layer 42 is provided at a part of the boundary between the second conductive portion 33 and the third conductive portion 52 to bond the second conductive portion 33 and the third conductive portion 52. ing. Thus, the second conductive portion 33 and the third conductive portion 5
Both the electrical connection strength and the physical connection strength between the two are increased.

  FIG. 12 is a plan view showing the mask 70 of the present embodiment.

As shown in FIG. 12, each cover 71 of the mask 70 of this embodiment has a plurality of openings 75. The plurality of openings 75 face at least a part of the first conductive portion 23 (or the second conductive portion 33). A molecular bonding agent is applied to the portion corresponding to the opening 75 in the first conductive portion 23 and the second conductive portion 33 to form the molecular bonding layer 40 through the opening 75. On the other hand, in the part where the opening 75 is not provided, the molecular bonding agent is not applied, and the bonding layer non-existing part 61 is formed.

The opening ratio of the opening 75 with respect to the entire area of the cover 71 is set smaller than the ratio (for example, volume ratio or mass ratio) of the resin 52b with respect to the entire third conductive portion 52. For example,
The third conductive portion 52 has a volume or mass of the conductive particles 52a of 60% and the resin 52b of 40%.
%, The opening ratio of the opening 75 to the cover 71 is set to a value (for example, 20%) smaller than 40%. Thereby, the conductive particles 52a and the first conductive portion 2
3 or the 2nd electroconductive part 33 can be made to contact more reliably.

(Fourth embodiment)
Next, a fourth embodiment will be described with reference to FIGS. 13 and 14. This embodiment
The third is that the bonding layer non-existing portion 61 is formed at a position different from the edge portion 52e of the third conductive portion 52.
This is different from the embodiment. The configurations other than those described below are the same as those in the third embodiment.

  FIG. 13 is a cross-sectional view showing the semiconductor package 10 of the present embodiment.

As shown in FIG. 13, in the present embodiment, the first molecular bonding layer 41 includes an edge portion (for example, a peripheral portion) 23e of the first conductive portion 23 and an edge portion (for example, a peripheral portion) 52e of the third conductive portion 52. The bonding layer non-existing portions 61 are formed at different positions. In other words, at least a part of the first molecular bonding layer 41 is provided at a position corresponding to the edge (for example, peripheral edge) 23e of the first conductive portion 23 and the edge (for example, peripheral edge) 52e of the third conductive portion 52. It has been. Thereby, the semiconductor package 1
The edge portion (for example, the peripheral edge portion) 23e and the third portion of the first conductive portion 23 where force is easily applied at the time of zero thermal expansion.
The bonding strength between the first conductive portion 23 and the third conductive portion 52 is increased by the first molecular bonding layer 41 at the edge portion (for example, the peripheral portion) 52 e of the conductive portion 52. Thereby, the reliability and lifetime of the semiconductor package 10 can be improved. As used herein, “corresponding position” means
It means a position that overlaps when the base substrate 20 is viewed in plan (that is, when viewed from the thickness direction of the base substrate 20, when the molecular bonding layers 41 and 42 are viewed in plan). For example, the first molecular bonding layer 4
1 includes at least a part (for example, a peripheral edge) 52e of the third conductive part 52 and the first conductive part 23.
And are joined.

Similarly, in the present embodiment, the second molecular bonding layer 42 is located at a position different from the edge (for example, peripheral edge) 33e of the second conductive portion 33 and the edge (for example, peripheral edge) 52e of the third conductive portion 52. A bonding layer non-existing portion 61 is formed. In other words, at least a part of the second molecular bonding layer 42 includes an edge portion (for example, a peripheral portion) 33e of the second conductive portion 33 and an edge portion (for example, a peripheral portion) of the third conductive portion 52.
52e is provided at a position corresponding to 52e. As a result, the second molecular bonding layer is formed at the edge portion (for example, the peripheral portion) 33e of the second conductive portion 33 and the edge portion (for example, the peripheral portion) 52e of the third conductive portion 52, which are easily subjected to force when the semiconductor package 10 is thermally expanded. 42 increases the bonding strength between the second conductive portion 33 and the third conductive portion 52. Thereby, the reliability and lifetime of the semiconductor package 10 can be improved. For example, at least a part of the second molecular bonding layer 42 is the third molecular bonding layer 42.
The edge part (for example, peripheral part) 52e of the electroconductive part 52 and the 2nd electroconductive part 33 are joined.

  FIG. 14 is a plan view showing the mask 70 of the present embodiment.

As shown in FIG. 14, the mask 70 of this embodiment has a plurality of openings 75. In the present embodiment, the plurality of openings 75 include the edge portion (for example, the peripheral portion) 23e of the first conductive portion 23 and the third portion.
The conductive portion 52 is provided at a position corresponding to an edge (for example, a peripheral edge) 52e. For example, the at least one opening 75 (for example, the plurality of openings 75) is the edge 23e of the first conductive portion 23.
And provided at a position overlapping the edge 52e of the third conductive portion 52. Thereby, the edge part (for example, peripheral part) 23e of the 1st conductive part 23 and the edge part (for example, peripheral part) 52e of the 3rd conductive part 52 are obtained.
The first molecular bonding layer 41 is formed at a position corresponding to.

From another point of view, the plurality of openings 75 are formed at the edge (for example, the peripheral edge) of the second conductive portion 33.
33e and the edge part (for example, peripheral part) 52e of the 3rd electroconductive part 52 are provided in the position corresponding to. For example, at least one opening 75 (for example, a plurality of openings 75) is formed in the second conductive portion 3.
The third edge portion 33e and the edge portion 52e of the third conductive portion 52 are provided so as to overlap with each other. As a result, the second molecular bonding layer 42 is formed at positions corresponding to the edge (for example, the peripheral edge) 33e of the second conductive portion 33 and the edge (for example, the peripheral edge) 52e of the third conductive portion 52.

In the present embodiment, the plurality of openings 75 are the third conductive portions 52 when the mask 70 is viewed in plan.
Compared to the region corresponding to the central portion 52c of the third conductive portion 52, the edge portion (for example, the peripheral portion) 52e of the third conductive portion 52
Many are distributed in the area corresponding to. As a result, the third conductive portion 52 is formed at the edge portion (e.g., the peripheral portion) 52e of the third conductive portion 52 where a force is easily applied when the semiconductor package 10 is thermally expanded.
The bonding strength of is increased. Thereby, the reliability and lifetime of the semiconductor package 10 can be further increased.

From another viewpoint, when the mask 70 is viewed in plan, the plurality of openings 75 are compared with a region corresponding to the central portion 23c of the first conductive portion 23 or the central portion 33c of the second conductive portion 33. Many of the first conductive portions 23 are distributed in a region corresponding to the edge portion (for example, the peripheral portion) 23e of the first conductive portion 23 or the edge portion (for example, the peripheral portion) 33e of the second conductive portion 33. Accordingly, the first conductive portion 23 is formed at the edge portion (for example, the peripheral portion) 23e of the first conductive portion 23 or the edge portion (for example, the peripheral portion) 33e of the second conductive portion 33, to which a force is easily applied when the semiconductor package 10 is thermally expanded. Alternatively, the bonding strength of the second conductive portion 33 is increased. Thereby, the reliability and lifetime of the semiconductor package 10 can be further increased.

FIG. 15 is a cross-sectional view showing a part of a semiconductor package 10 according to a modification of the present embodiment. As shown in FIG. 15, the bonding layer non-existing portion 61 is located at a position corresponding to the central portion 23 c of the first conductive portion 23.
May be formed, and the first molecular bonding layer 41 may be provided at a position corresponding to the edge portion (for example, the peripheral edge portion) 23e of the first conductive portion 23. Similarly, the bonding layer non-existing portion 61 is formed at a position corresponding to the central portion 33c of the second conductive portion 33, and the second portion is positioned at a position corresponding to the edge portion (for example, the peripheral portion) 33e of the second conductive portion 33. A molecular bonding layer 42 may be provided. Accordingly, the first conductive portion 23 is formed at the edge portion (for example, the peripheral portion) 23e of the first conductive portion 23 and the edge portion (for example, the peripheral portion) 33e of the second conductive portion 33, to which force is easily applied when the semiconductor package 10 is thermally expanded. And the joining strength of the 2nd electroconductive part 33 is raised. Thereby, the reliability and lifetime of the semiconductor package 10 can be further increased. In at least this modification, the third conductive portion 52 may be a solder connection portion (for example, a solder bump or a solder ball).

(Fifth embodiment)
Next, a fifth embodiment will be described with reference to FIGS. 16 and 17. This embodiment
This is different from the first embodiment in that a molecular bonding layer 90 is added between the semiconductor chip 30 and the heat dissipation member 82. Configurations other than those described below are the same as those in the first embodiment.

  FIG. 16 is a cross-sectional view showing the semiconductor package 10 of the present embodiment.

As shown in FIG. 16, the semiconductor package 10 includes, for example, a base substrate 20, a semiconductor chip 30, a plurality of third conductive portions 52, an underfill 81, a molecular bonding layer 40, a heat dissipation member 82,
A heat conductive sheet 83 and a molecular bonding layer 90 are provided.

The base substrate 20 of the present embodiment includes a base substrate main body 21 and a first conductive portion 23 provided on the surface of the base substrate main body 21. For example, the first conductive portion 23 is a conductive pad (that is, a connection portion, an electrical connection portion, a terminal portion).

The semiconductor chip 30 of the present embodiment includes a semiconductor chip body 31 and a second conductive portion 33 provided on the surface of the semiconductor chip body 31. For example, the second conductive portion 33 is a conductive pad (
That is, a connection part, an electrical connection part, and a terminal part).

The third conductive portion 52 is provided between the first conductive portion 23 of the base substrate 20 and the second conductive portion 33 of the semiconductor chip 30, and electrically connects the first conductive portion 23 and the third conductive portion 52. doing. For example, the third conductive portion 52 is a solder connection portion (for example, a solder bump or a solder ball).

The underfill 81 (that is, the insulating portion) is provided between the base substrate 20 and the semiconductor chip 30. At least a part of the underfill 81 is provided between the plurality of third conductive portions 52 to electrically insulate the plurality of third conductive portions 52 from each other. Underfill 81 is
It is formed of a thermosetting or thermoplastic insulating resin.

The molecular bonding layer 40 of the present embodiment includes a first molecular bonding layer 41, a second molecular bonding layer 42, and a third molecular bonding layer 43. The first molecular bonding layer 41 is provided between the first conductive portion 23 and the third conductive portion 52 and between the surface of the base substrate body 21 and the underfill 81.
The second molecular bonding layer 42 is provided between the second conductive portion 33 and the third conductive portion 52 and between the surface of the semiconductor chip body 31 and the underfill 81. The third molecular bonding layer 43 is provided between the peripheral surface 52 s of the third conductive portion 52 and the underfill 81, and bonds between the peripheral surface 52 s of the third conductive portion 52 and the underfill 81. Similar to the first molecular bonding layer 41 or the second molecular bonding layer 42, the third molecular bonding layer 43 is formed of a molecular bonding agent (for example, a triazine derivative) as described above. Here, the underfill 81 may expand due to heat generated by the semiconductor chip 30. Therefore, in the present embodiment, the molecular bonding agent 40 causes the underfill 81 and the base substrate 20 to be interposed between the underfill 81 and the semiconductor chip 3.
Strength between zero and between the underfill 81 and the third conductive portion 52 is increased.

The heat radiating member 82 (for example, a heat sink or a heat spreader) is, for example, a heat radiating plate.
The heat radiating member 82 is located on the opposite side of the base substrate 20 with respect to the semiconductor chip 30 and is thermally connected to the semiconductor chip 30 via a heat conductive sheet 83 to be described later. Heat dissipation member 82
Causes at least part of the heat generated by the semiconductor chip 30 to be dissipated outside the semiconductor package 10. The heat radiating member 82 is made of, for example, metal and has rigidity.

The heat conductive sheet 83 (that is, the heat connection sheet) is a heat connection member having flexibility, and is formed of a resin material having good heat conductivity. The heat conductive sheet 83 is sandwiched between the semiconductor chip 30 and the heat dissipation member 82. The heat conductive sheet 83 can be deformed following the unevenness and inclination of the surface of the semiconductor chip 30 and the unevenness and inclination of the surface of the heat dissipation member 82. Thereby, the heat conductive sheet 83 thermally connects the heat dissipation member 82 to the semiconductor chip 30.

The molecular bonding layer 90 includes a first molecular bonding layer 91 and a second molecular bonding layer 92. The first molecular bonding layer 91 and the second molecular bonding layer 92 are similar to the first molecular bonding layer 41 and the second molecular bonding layer 42,
It is formed by the molecular bonding agent (for example, triazine derivative) as described above.

The first molecular bonding layer 91 is provided between the semiconductor chip 30 and the heat conductive sheet 83. The first molecular bonding layer 91 bonds the semiconductor chip 30 and the heat conductive sheet 83. At least a part of the first molecular bonding layer 91 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 91) is chemically bonded (for example, covalently bonded) to the material 30m included in the semiconductor chip 30. Similarly, at least a part of the first molecular bonding layer 91 (that is, at least a part of the molecular bonding agent forming the first molecular bonding layer 91) is chemically bonded to the material 83m included in the heat conductive sheet 83 (
(For example, covalent bond). For example, at least one molecular bonded body 40r included in the first molecular bonding layer 91 is chemically bonded (for example, covalently bonded) to both the material 30m of the semiconductor chip 30 and the material 83m of the heat conductive sheet 83. Thereby, adhesiveness is improved between the semiconductor chip 30 and the heat conductive sheet 83, and the thermal connectivity between the semiconductor chip 30 and the heat conductive sheet 83 is improved. The material 83 is, for example, a resin material.

On the other hand, the second molecular bonding layer 92 is provided between the heat dissipation member 82 and the heat conductive sheet 83. The second molecular bonding layer 92 bonds the heat radiating member 82 and the heat conductive sheet 83. At least a part of the second molecular bonding layer 92 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 92) is chemically bonded (for example, covalently bonded) to the material 82m included in the heat dissipation member 82.
Similarly, at least a part of the second molecular bonding layer 92 (that is, at least a part of the molecular bonding agent forming the second molecular bonding layer 92) is chemically bonded (for example, covalently bonded) to the material 83m included in the heat conductive sheet 83. )doing. For example, at least one molecular conjugate 40r included in the second molecular junction layer 92 is chemically bonded (for example, covalently bonded) to both the material 82m of the heat dissipation member 82 and the material 83m of the heat conductive sheet 83. Thereby, adhesiveness is improved between the heat radiating member 82 and the heat conductive sheet 83, and the thermal connectivity between the heat radiating member 82 and the heat conductive sheet is improved.

FIG. 17 is a partially enlarged cross-sectional view of the periphery of the heat conductive sheet 83 of the present embodiment. As shown in FIG. 17, the surface of the semiconductor chip 30 has a fine recess 30a as the surface roughness. At least a part of the first molecular bonding layer 91 is provided inside the recess 30a. In the present embodiment, the heat conductive sheet 83 is deformed according to the shape of the recess 30a, so that the recess 30a.
Also inside, the semiconductor chip 30 and the heat conductive sheet 83 are bonded by the first molecular bonding layer 91.

Similarly, the surface of the heat dissipation member 82 has a fine recess 82a as the surface roughness. At least a part of the second molecular bonding layer 92 is provided inside the recess 82a. In this embodiment,
The heat conductive sheet 83 is deformed according to the shape of the recess 82a, so that the heat radiating member 82 and the heat conductive sheet 83 are bonded by the second molecular bonding layer 92 also inside the recess 82a.

FIG. 18 is a perspective view illustrating an example of the electronic apparatus 100 according to the embodiment. The electronic device 100 is mounted with the semiconductor package 10 according to the first to fifth embodiments and their modifications. The electronic device 100 is, for example, an electronic device compatible with IOT (Internet Of Things), and can be connected to the Internet by wire or wireless. The electronic device 100 is
It is not limited to the above example. The electronic device 100 may be a vehicle-mounted electronic device or various electronic devices for other purposes.

According to at least one embodiment described above, the adhesion strength between at least one of the substrate and the semiconductor chip and the resin of the intermediate layer is improved by the molecular bonding layer, and the conductivity between the substrate and the semiconductor chip through the intermediate layer is improved. A semiconductor package that can be increased can be provided.

Although the above embodiment was described, the above-mentioned embodiment is not the only embodiment. The above-described embodiments are presented as examples, and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope of the present invention and the gist thereof, and are also included in the invention described in the claims and the equivalent scope thereof.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor package, 20 ... Base substrate, 30 ... Semiconductor chip, 40 ... Molecular junction layer, 50 ... Intermediate layer.

Claims (20)

A substrate having a first conductive portion and a first insulating portion;
A semiconductor chip having a second conductive portion and a second insulating portion;
A third conductive part including a plurality of conductive particles and a resin, provided between the first conductive part and the second conductive part and electrically connecting the first conductive part and the second conductive part; An intermediate layer having a third insulating portion provided between the first insulating portion and the second insulating portion;
A molecular bonding layer provided between at least one of the first conductive portion and the second conductive portion and the third conductive portion;
With
At least a part of the molecular bonding layer is chemically bonded to the resin of the third conductive portion,
At least a portion of the molecular bonding layer is chemically bonded to at least one of the first conductive material included in the first conductive portion and the second conductive material included in the second conductive portion;
Semiconductor package. The molecular bonding layer includes a molecular bonded body that is covalently bonded to both the resin of the third conductive portion and the first conductive material of the first conductive portion, and the resin of the third conductive portion and the first conductive material. The semiconductor package according to claim 1, comprising at least one of molecular junctions covalently bonded to both the second conductive material of the two conductive portions. At least a part of the molecular bonding layer is chemically bonded to at least one conductive particle included in the plurality of conductive particles of the third conductive part.
The semiconductor package according to claim 1. The molecular bonding layer includes a molecular bonded body that is covalently bonded to both one conductive particle included in the plurality of conductive particles of the third conductive portion and the first conductive material of the first conductive portion, and the first 3
4. The semiconductor package according to claim 3, comprising at least one of molecular junctions covalently bonded to both one conductive particle included in the plurality of conductive particles of the conductive portion and the second conductive material of the second conductive portion. . The molecular bonding layer includes: a first portion provided between at least one of the first conductive portion and the second conductive portion and the third conductive portion; and the first insulating portion and the second insulating portion. A second portion provided between at least one and the third insulating portion,
At least a part of the molecular bonding layer is chemically bonded to at least one of the first insulating material included in the first insulating portion and the second insulating material included in the second insulating portion,
The semiconductor package according to claim 1, wherein at least a part of the molecular bonding layer is chemically bonded to a third insulating material included in the third insulating portion. The molecular bonding layer includes a molecular bonded body that is covalently bonded to both the third insulating material of the third insulating portion and the first insulating material of the first insulating portion, and the third insulating portion. The semiconductor package according to claim 5, comprising at least one of a molecular bonded body that is covalently bonded to both the insulating material and the second insulating material of the second insulating portion. The molecular bonding layer is provided between the first conductive part and the third conductive part, and is chemically bonded to both the first conductive part and the third conductive part. The semiconductor according to claim 1, further comprising: a second molecular bonding layer provided between the second conductive portion and the third conductive portion and chemically bonded to both the second conductive portion and the third conductive portion. package. The semiconductor package according to claim 1, wherein the molecular bonding layer includes a triazine dithiol residue. The semiconductor package according to claim 1, wherein a covering density of the molecular bonding layer with respect to the first conductive portion or the second conductive portion is 20% or more and 80% or less. The semiconductor package according to claim 1, wherein at least a part of the molecular bonding layer has a monomolecular film shape. The molecular bonding layer is formed on at least a part of at least one of a boundary between the first conductive part and the third conductive part and a boundary between the second conductive part and the third conductive part. Forming a bonding layer non-existing portion in which no molecular bonding layer exists,
The at least one conductive particle included in the plurality of conductive particles of the third conductive portion is provided in the bonding layer non-existing portion and is in contact with the first conductive portion or the second conductive portion. The semiconductor package described. The bonding layer non-existing portion is provided at a position different from the edge of the third conductive portion,
At least a part of the molecular bonding layer is provided at a position corresponding to an edge of the third conductive part, and an edge of the third conductive part and at least one of the first conductive part and the second conductive part The semiconductor package according to claim 11. A molecular bonding layer is formed by applying a molecular bonding agent to at least one surface of the first conductive portion of the substrate and the second conductive portion of the semiconductor chip,
By sandwiching a third conductive part including a plurality of conductive particles and a resin between the first conductive part and the second conductive part, at least a part of the molecular bonding layer is formed on the resin of the third conductive part. Contact,
A method for manufacturing a semiconductor package. The method for manufacturing a semiconductor package according to claim 13, wherein at least a part of the molecular bonding layer is brought into contact with at least one conductive particle included in the plurality of conductive particles of the third conductive portion. The method of manufacturing a semiconductor package according to claim 13, wherein the molecular bonding agent includes a triazine derivative. The triazine derivative is a compound represented by the general formula (C1).
(C1)

(In the formula, R represents a hydrocarbon group or a hydrocarbon group in which a hetero atom or a functional group may intervene, X represents a hydrogen atom or a hydrocarbon group, Y represents an alkoxy group,
Z represents a thiol group, an amino group or an azide group which may form a salt, or a hydrocarbon group which may be intervened by a hetero atom or a functional group, n1 is an integer from 1 to 3, n
2 is an integer from 1 to 2. )
The method for manufacturing a semiconductor package according to claim 15. Molecular bonding to at least one surface of the first insulating portion of the substrate and the second insulating portion of the semiconductor chip in a state where at least a part of the first conductive portion of the substrate and the second conductive portion of the semiconductor chip is covered with a mask The molecular bonding layer is formed by applying the agent,
Remove the mask,
A third conductive portion disposed between the first conductive portion and the second conductive portion; and a third insulating portion disposed between the first insulating portion and the second insulating portion. By sandwiching the intermediate layer between the substrate and the semiconductor chip, at least a part of the molecular bonding layer is brought into contact with the third insulating portion,
A method for manufacturing a semiconductor package. The mask has an opening facing at least a part of at least one of the first conductive portion and the second conductive portion;
At least a part of the molecular bonding agent passes through the opening and the first conductive part and the second conductive part.
The method for manufacturing a semiconductor package according to claim 17, wherein the method is applied to at least one surface of the conductive portion. The opening is provided at a position corresponding to an edge of the third conductive portion;
The method of manufacturing a semiconductor package according to claim 17, wherein at least a part of the molecular bonding agent is applied to a position corresponding to an edge portion of the third conductive portion through the opening. The mask has a plurality of openings facing at least a part of the first conductive portion and the second conductive portion;
At least a part of the molecular bonding agent is applied to at least one surface of the first conductive part and the second conductive part through the plurality of openings,
The plurality of openings are distributed more in a region corresponding to the edge of the third conductive portion than in a region corresponding to the central portion of the third conductive portion when the mask is viewed in plan. A method for manufacturing a semiconductor package according to claim 17.

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