JP2018022149A - Manufacturing method of display device, display device, display module and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a display device with low power consumption.SOLUTION: A manufacturing method of a display device includes the steps of: forming a first common electrode 113 on a first substrate 361; forming a resin layer with a thickness of 0.1 μm to 3 μm on the prepared substrate; forming a thin region on the resin layer; forming a first pixel electrode 311a on the resin layer; forming a conductive layer 311b covering a second region simultaneously with the step of forming the first pixel electrode; forming a first insulating layer 220 on the first pixel electrode; forming a second display element 170 on the insulating layer; bonding the prepared substrate to the second substrate 351 using an adhesive 142; irradiating the resin layer with a laser beam; separating the prepared substrate from the first pixel electrode; disposing liquid crystal 112 between the first common electrode and the first pixel electrode, and bonding the first substrate to the second substrate using an adhesive 141, thus forming a first display element 180.SELECTED DRAWING: Figure 3

Description

One embodiment of the present invention relates to a method for manufacturing a display device.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, a driving method thereof, Alternatively, the production method thereof can be given as an example.

In recent years, display devices are expected to be applied to various uses. As a display device, for example, a light emitting device having a light emitting element, a liquid crystal display device having a liquid crystal element, and the like have been developed.

For example, Patent Document 1 discloses a flexible light emitting device to which an organic EL (Electroluminescence) element is applied.

Patent Document 2 has a region that reflects visible light and a region that transmits visible light, and can be used as a reflective liquid crystal display device in an environment where sufficient external light is obtained. A transflective liquid crystal display device that can be used as a transmissive liquid crystal display device in an environment where the above cannot be obtained is disclosed.

JP 2014-197522 A JP 2011-191750 A

An object of one embodiment of the present invention is to provide a method for manufacturing a display device with low power consumption. An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high visibility regardless of ambient brightness. An object of one embodiment of the present invention is to provide a method for manufacturing an all-weather display device. An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high convenience. Another object of one embodiment of the present invention is a method for manufacturing a display device that is reduced in thickness or weight. Another object of one embodiment of the present invention is to provide these manufacturing methods more simply.

Note that the description of these problems does not disturb the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Issues other than these can be extracted from the description, drawings, and claims.

One embodiment of the present invention is a method for manufacturing a display device including a first display element, a second display element, a first insulating layer, and a conductive layer, and the first display element has a function of reflecting visible light. A first pixel electrode having liquid crystal, a first common electrode having a function of transmitting visible light, and a second display element having a function of transmitting visible light, a second pixel electrode having a function of transmitting visible light, and light emission A first region having a layer and a second common electrode having a function of reflecting visible light and having a thickness of 0.1 μm to 3 μm using a thermosetting material; Forming a resin layer having a second region thinner than the first region on the manufacturing substrate, the first region on the resin layer, and the second region thinner than the first region. Forming a first pixel electrode on the resin layer, forming a first pixel electrode, and At the same time, a step of forming a conductive layer covering the second region, a step of forming a first insulating layer over the first pixel electrode, a second pixel electrode, a light emitting layer, and a first layer over the insulating layer By forming the two common electrodes in this order, a step of forming the second display element, a step of bonding the manufacturing substrate and the second substrate with an adhesive, and irradiating the resin layer with laser light A step of separating the manufacturing substrate and the first pixel electrode, a liquid crystal is disposed between the first common electrode and the first pixel electrode, and an adhesive is used to form the first substrate A method for manufacturing a display device including a step of forming a first display element by bonding to a second substrate.

According to another embodiment of the present invention, in the step of separating the manufacturing substrate and the first pixel electrode in the above manufacturing method, the separation is performed at the interface between the resin layer and the manufacturing substrate. It is a method for manufacturing a display device further including a step of exposing.

According to another embodiment of the present invention, in the step of separating the manufacturing substrate and the first pixel electrode in the manufacturing method, the separation is performed between the manufacturing substrate, the pixel electrode, and the conductive layer in the resin layer. Is a method for manufacturing a display device, which further includes a step of exposing the conductive layer.

Another embodiment of the present invention is a method for manufacturing a display device, further including a step of forming an insulating layer over a resin layer after forming the second region in the resin layer in the above manufacturing method.

According to another embodiment of the present invention, in the above manufacturing method, a step of forming an insulating layer over the resin layer after forming the second region in the resin layer, and a step of separating the manufacturing substrate and the first pixel electrode In this method, the separation is performed inside the resin layer and at the interface between the resin layer and the insulating layer, and after the separating step, the method further includes the step of exposing the conductive layer.

Another embodiment of the present invention is a method for manufacturing a display device in which the material of the insulating layer is an inorganic insulating material in the above manufacturing method.

Another embodiment of the present invention is a manufacturing method of a display device in which the separation is performed in the resin layer and the interface between the resin layer and the conductive layer in the step of separating the manufacturing substrate and the first pixel electrode in the manufacturing method. Is the method.

Another embodiment of the present invention is a method for manufacturing a display device, which includes a step of connecting a wiring for inputting a signal or power to a conductive layer exposed in the above manufacturing method through a connection layer.

Another embodiment of the present invention is a method for manufacturing a display device in which in the above manufacturing method, a conductive layer exposed through a connection body is connected to the first common electrode.

Another embodiment of the present invention is a method for manufacturing a display device in which a resin layer is formed using a solution having a viscosity of 5 cP or more and less than 100 cP in the above manufacturing method.

Another embodiment of the present invention is a method for manufacturing a display device in which the resin layer is formed using a solution having a viscosity of 10 cP or more and less than 50 cP in the above manufacturing method.

Another embodiment of the present invention is a method for manufacturing a display device in which a resin layer is formed using a spin coater in the above manufacturing method.

According to another embodiment of the present invention, in the above manufacturing method, a transistor including an oxide semiconductor in a channel formation region is provided between the step of forming the first pixel electrode and the step of forming the second pixel electrode. It is a method for manufacturing a display device including a step of forming, and heating a resin layer in a step of forming a resin layer at a temperature higher than a temperature of heating in a step of forming a transistor.

Another embodiment of the present invention is a method for manufacturing a display device, in which the material for forming the resin layer is a photosensitive material.

One embodiment of the present invention can provide a method for manufacturing a display device with low power consumption. One embodiment of the present invention can provide a method for manufacturing a display device with high visibility regardless of ambient brightness. One embodiment of the present invention can provide a method for manufacturing an all-weather display device. One embodiment of the present invention can provide a method for manufacturing a display device with high convenience. One embodiment of the present invention can provide a method for manufacturing a thin display device or a light display device.

Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. The perspective view which shows an example of a display apparatus. Sectional drawing which shows an example of a display apparatus. FIG. 10 is a cross-sectional view illustrating an example of a transistor. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a display device and an example of a method for manufacturing the display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a display device and an example of a method for manufacturing the display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a display device and an example of a method for manufacturing the display device. FIG. 11 is a block diagram illustrating an example of a display device. The figure which shows an example of a pixel unit. The figure which shows an example of a pixel unit. The figure which shows an example of a pixel unit. FIG. 10 illustrates an example of a display device and an example of a pixel. FIG. 10 is a circuit diagram illustrating an example of a pixel circuit of a display device. FIG. 6 is a circuit diagram illustrating an example of a pixel circuit of a display device, and a diagram illustrating an example of a pixel. The figure which shows an example of a display module. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

In addition, the position, size, range, and the like of each component illustrated in the drawings may not represent the actual position, size, range, or the like for easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, range, or the like disclosed in the drawings.

Note that the terms “film” and “layer” can be interchanged with each other depending on circumstances or circumstances. For example, the term “conductive layer” can be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” can be changed to the term “insulating layer”.

In this specification and the like, a metal oxide is a metal oxide in a broad expression. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply OS), and the like. For example, in the case where a metal oxide is used for a semiconductor layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, in the case of describing as an OS FET, it can be said to be a transistor including a metal oxide or an oxide semiconductor.

In this specification and the like, metal oxides containing nitrogen may be collectively referred to as metal oxides. Further, a metal oxide containing nitrogen may be referred to as a metal oxynitride.

Moreover, in this specification etc., it may describe as CAAC (c-axis aligned crystal) and CAC (cloud-aligned composite). Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or a material structure.

An example of a crystal structure of an oxide semiconductor or a metal oxide will be described. Note that in the following, an example of an oxide semiconductor film formed by a sputtering method using an In—Ga—Zn oxide target (In: Ga: Zn = 4: 2: 4.1 [atomic ratio]) is described. Will be described. An oxide semiconductor formed by a sputtering method with a substrate temperature of 100 ° C. to 130 ° C. using the target is referred to as sIGZO, and the substrate temperature is set to room temperature (RT) using the target. An oxide semiconductor formed by the method is referred to as tIGZO. For example, sIGZO has a crystal structure of one or both of nc (nano crystal) and CAAC. TIGZO has an nc crystal structure. Note that the room temperature (RT) here includes a temperature when the substrate is not intentionally heated.

In this specification and the like, a CAC-OS or a CAC-metal oxide has a function of a conductor in part of a material and a function of a dielectric (or insulator) in part of the material. As a whole, it has a function as a semiconductor. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a semiconductor layer of a transistor, the conductor has a function of flowing electrons (or holes) serving as carriers, and the dielectric does not flow electrons serving as carriers. It has a function. By causing the function as a conductor and the function as a dielectric to act complementarily, a switching function (function to turn on / off) can be given to the CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

In this specification and the like, a CAC-OS or a CAC-metal oxide includes a conductor region and a dielectric region. The conductor region has the above-described conductor function, and the dielectric region has the above-described dielectric function. In the material, the conductor region and the dielectric region may be separated at the nanoparticle level. In addition, the conductor region and the dielectric region may be unevenly distributed in the material, respectively. In addition, the conductor region may be observed with the periphery blurred and connected in a cloud shape.

That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

In CAC-OS or CAC-metal oxide, the conductor region and the dielectric region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.

(Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

The display device of this embodiment includes a first display element that reflects visible light and a second display element that emits visible light.

The display device of this embodiment has a function of displaying an image using one or both of light reflected by the first display element and light emitted by the second display element.

As the first display element, an element that reflects external light for display can be used. Since such an element does not have a light source, power consumption during display can be extremely reduced.

As the first display element, a reflective liquid crystal element can be typically used. Alternatively, as a first display element, in addition to a shutter-type MEMS (Micro Electro Mechanical System) element, an optical interference-type MEMS element, a microcapsule type, an electrophoretic method, an electrowetting method, and an electronic powder fluid (registered trademark) An element to which a method or the like is applied can be used.

A light-emitting element is preferably used for the second display element. The light emitted from such a display element is not affected by external light in brightness or chromaticity, so that it has high color reproducibility (wide color gamut), high contrast, and vivid display. Can do.

For the second display element, a self-luminous light emitting element such as an OLED (Organic Light Emitting Diode), an LED (Light Emitting Diode), or a QLED (Quantum-Dot Light Emitting Diode) can be used.

The display device of the present embodiment includes a first mode for displaying an image using only the first display element, a second mode for displaying an image using only the second display element, and a first mode There is a third mode in which an image is displayed using the display element and the second display element, and these modes can be used by switching automatically or manually.

In the first mode, an image is displayed using the first display element and external light. Since the first mode does not require a light source, it is an extremely low power consumption mode. For example, when external light is sufficiently incident on the display device (for example, in a bright environment), display can be performed using light reflected by the first display element. For example, it is effective when the external light is sufficiently strong and the external light is white light or light in the vicinity thereof. The first mode is a mode suitable for displaying characters. In the first mode, light that reflects external light is used, so that it is possible to perform display that is kind to the eyes, and there is an effect that the eyes are less tired.

In the second mode, an image is displayed using light emission by the second display element. Therefore, an extremely vivid display (high contrast and high color reproducibility) can be performed regardless of illuminance and chromaticity of external light. For example, it is effective when the illuminance is extremely low, such as at night or in a dark room. When the surroundings are dark, the user may feel dazzled when performing bright display. In order to prevent this, it is preferable to perform display with reduced luminance in the second mode. Thereby, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying vivid images (still images and moving images).

In the third mode, display is performed using both reflected light from the first display element and light emission from the second display element. While displaying more vividly than in the first mode, it is possible to suppress power consumption as compared with the second mode. For example, it is effective when the illuminance is relatively low, such as under room lighting or in the morning or evening hours, or when the chromaticity of outside light is not white. Further, by using light in which reflected light and light emission are mixed, it is possible to display an image that makes it feel as if you are looking at a painting.

With such a configuration, it is possible to realize a highly visible and highly convenient display device or an all-weather display device regardless of ambient brightness.

FIG. 1 shows a cross-sectional view of the display device 10. The display device 10 includes a liquid crystal element 180 as a first display element and a light emitting element 170 as a second display element.

A display device 10 illustrated in FIG. 1 includes a liquid crystal element 180, a light-emitting element 170, a transistor 41, a transistor 42, and the like between a pair of substrates (a substrate 351 and a substrate 361).

The liquid crystal element 180 includes an electrode 311 having a function of reflecting visible light, a liquid crystal 112, and an electrode 113 having a function of transmitting visible light. The liquid crystal 112 is located between the electrode 311 and the electrode 113.

The liquid crystal element 180 has a function of reflecting visible light. The liquid crystal element 180 emits the reflected light 22 to the substrate 361 side.

The electrode 311 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 220. The electrode 311 has a function as a pixel electrode. The electrode 113 is electrically connected to the conductive layer 235 through the connection body 243. The electrode 311 and the conductive layer 235 can be obtained by processing the same conductive film.

The light-emitting element 170 includes an electrode 191, an EL layer 192, and an electrode 193. The EL layer 192 is located between the electrode 191 and the electrode 193. The EL layer 192 includes at least a light-emitting substance. The electrode 191 has a function of transmitting visible light. The electrode 193 preferably has a function of reflecting visible light.

The light-emitting element 170 has a function of emitting visible light. Specifically, the light-emitting element 170 is an electroluminescent element that emits light (light emission 21) to the substrate 361 side by applying a voltage between the electrode 191 and the electrode 193.

The electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The electrode 191 has a function as a pixel electrode. An end portion of the electrode 191 is covered with an insulating layer 216.

The light emitting element 170 is preferably covered with an insulating layer 194. In FIG. 1, the insulating layer 194 is provided in contact with the electrode 193. By providing the insulating layer 194, impurities can be prevented from entering the light-emitting element 170, and the reliability of the light-emitting element 170 can be improved. A substrate 351 is attached to the insulating layer 194 with an adhesive layer 142.

The transistor 41 and the transistor 42 are located on the same plane. The transistor 41 has a function of controlling driving of the liquid crystal element 180. The transistor 42 has a function of controlling driving of the light-emitting element 170.

The circuit electrically connected to the liquid crystal element 180 is preferably formed on the same plane as the circuit electrically connected to the light emitting element 170. Thereby, the thickness of the display device can be reduced as compared with the case where the two circuits are formed on different surfaces. Further, since the two transistors can be manufactured in the same process, the manufacturing process can be simplified as compared with the case where the two transistors are formed over different surfaces.

The electrode 311 which is a pixel electrode of the liquid crystal element 180 is positioned opposite to the electrode 191 which is a pixel electrode of the light-emitting element 170 with the gate insulating layer included in the transistors 41 and 42 interposed therebetween.

Here, the liquid crystal element 180 is used in the case where the transistor 41 which includes an oxide semiconductor in the channel formation region and has extremely low off-state current or a memory element which is electrically connected to the transistor 41 is used. Thus, even when the writing operation to the pixel is stopped when displaying a still image, the gradation can be maintained. That is, display can be maintained even if the frame rate is extremely small. In one embodiment of the present invention, the frame rate can be extremely small, and driving with low power consumption can be performed.

Next, a configuration example of the display device of this embodiment will be described with reference to FIGS.

<Configuration example 1>
FIG. 2 is a schematic perspective view of the display device 300. The display device 300 has a structure in which a substrate 351 and a substrate 361 are attached to each other. In FIG. 2, the substrate 361 is clearly indicated by a broken line.

The display device 300 includes a display portion 362, a circuit 364, a wiring 365, and the like. FIG. 2 shows an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on the display device 300. Therefore, the structure illustrated in FIG. 2 can also be referred to as a display module including the display device 300, an IC, and an FPC.

As the circuit 364, for example, a scan line driver circuit can be used.

The wiring 365 has a function of supplying a signal and power to the display portion 362 and the circuit 364. The signal and power are input to the wiring 365 from the outside through the FPC 372 or from the IC 373.

FIG. 2 illustrates an example in which the IC 373 is provided on the substrate 351 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. For example, an IC having a scan line driver circuit or a signal line driver circuit can be used as the IC 373. Note that the display device 300 and the display module may have no IC. Further, the IC may be mounted on the FPC by a COF method or the like.

FIG. 2 shows an enlarged view of a part of the display unit 362. In the display portion 362, electrodes 311b included in the plurality of display elements are arranged in a matrix. The electrode 311b has a function of reflecting visible light, and functions as a reflective electrode of the liquid crystal element 180.

As shown in FIG. 2, the electrode 311b has an opening 451. Further, the display portion 362 includes the light-emitting element 170 on the substrate 351 side of the electrode 311b. Light from the light emitting element 170 is emitted to the substrate 361 side through the opening 451 of the electrode 311b.

FIG. 3 illustrates an example of a cross section of the display device 300 illustrated in FIG. 2 when a part of the region including the FPC 372, a part of the region including the circuit 364, and a part of the region including the display portion 362 are cut. Indicates.

3 includes a transistor 201, a transistor 203, a transistor 205, a transistor 206, a liquid crystal element 180, a light-emitting element 170, an insulating layer 220, a colored layer 131, a colored layer 134, and the like between a substrate 351 and a substrate 361. Have The substrate 361 and the insulating layer 220 are bonded via an adhesive layer 141. The substrate 351 and the insulating layer 220 are bonded through an adhesive layer 142.

The substrate 361 is provided with a coloring layer 131, a light shielding layer 132, an insulating layer 121, an electrode 113 functioning as a common electrode of the liquid crystal element 180, an alignment film 133b, an insulating layer 117, and the like. A polarizing plate 135 is provided on the outer surface of the substrate 361. The insulating layer 121 may function as a planarization layer. Since the surface of the electrode 113 can be substantially flattened by the insulating layer 121, the alignment state of the liquid crystal 112 can be made uniform. The insulating layer 117 functions as a spacer for maintaining the cell gap of the liquid crystal element 180.

The liquid crystal element 180 is a reflective liquid crystal element. The liquid crystal element 180 has a stacked structure in which the electrode 311a, the liquid crystal 112, and the electrode 113 are stacked. An electrode 311b that reflects visible light is provided in contact with the substrate 351 side of the electrode 311a. The electrode 311b has an opening 451. The electrode 311a and the electrode 113 transmit visible light. An alignment film 133a is provided between the liquid crystal 112 and the electrode 311a. An alignment film 133 b is provided between the liquid crystal 112 and the electrode 113.

In the liquid crystal element 180, the electrode 311b has a function of reflecting visible light, and the electrode 113 has a function of transmitting visible light. Light incident from the substrate 361 side is polarized by the polarizing plate 135, passes through the electrode 113 and the liquid crystal 112, and is reflected by the electrode 311b. Then, the light passes through the liquid crystal 112 and the electrode 113 again and reaches the polarizing plate 135. At this time, the alignment of the liquid crystal can be controlled by the voltage applied between the electrode 311b and the electrode 113, and the optical modulation of light can be controlled. That is, the intensity of light emitted through the polarizing plate 135 can be controlled. In addition, light that is not in a specific wavelength region is absorbed by the colored layer 131, so that the extracted light is, for example, red light.

As shown in FIG. 3, the opening 451 is preferably provided with an electrode 311a that transmits visible light. Accordingly, since the liquid crystal 112 is aligned in the region overlapping with the opening 451 as well as the other regions, it is possible to suppress the occurrence of unintended light leakage due to the alignment failure of the liquid crystal at the boundary between these regions.

In the connection portion 207, the electrode 311b is electrically connected to the conductive layer 222a included in the transistor 206 through the conductive layer 221b. The transistor 206 has a function of controlling driving of the liquid crystal element 180.

A connection portion 252 is provided in a part of the region where the adhesive layer 141 is provided. In the connection portion 252, the conductive layer 311 e obtained by processing the same conductive film as the electrode 311 a and a part of the electrode 113 are electrically connected to each other through the connection body 243. Therefore, a signal or a potential input from the FPC 372 connected to the substrate 351 side can be supplied to the electrode 113 formed on the substrate 361 side through the connection portion 252.

The connection portion 252 covers the recesses provided in the resin layer 62a and the insulating layer 63, and forms the conductive layer 311e and the conductive layer 311f with the same material as the electrode 311a and the electrode 311b. The conductive layer 311e exposed from the connection body 243 Is touching by the surface. By forming the conductive layer 311e and the conductive layer 311f so as to cover the concave portions provided in the resin layer 62a and the insulating layer 63, the conductive layer 311e can be easily exposed.

As the connection body 243, for example, conductive particles can be used. As the conductive particles, those obtained by coating the surface of particles such as organic resin or silica with a metal material can be used. It is preferable to use nickel or gold as the metal material because the contact resistance can be reduced. In addition, it is preferable to use particles in which two or more kinds of metal materials are coated in layers, such as further coating nickel with gold. Further, it is preferable to use a material that is elastically deformed or plastically deformed as the connection body 243. At this time, the connection body 243, which is a conductive particle, may have a shape crushed in the vertical direction as shown in FIG. By doing so, the contact area between the connection body 243 and the conductive layer electrically connected to the connection body 243 can be increased, the contact resistance can be reduced, and the occurrence of problems such as connection failure can be suppressed.

The connection body 243 is preferably disposed so as to be covered with the adhesive layer 141. For example, the connection body 243 may be dispersed in the adhesive layer 141 before curing.

The light emitting element 170 is a bottom emission type light emitting element. The light-emitting element 170 has a stacked structure in which the electrode 191, the EL layer 192, and the electrode 193 are stacked in this order from the insulating layer 220 side. The electrode 191 is connected to the conductive layer 222 b included in the transistor 205 through an opening provided in the insulating layer 214. The transistor 205 has a function of controlling driving of the light-emitting element 170. An insulating layer 216 covers the end portion of the electrode 191. The electrode 193 includes a material that reflects visible light, and the electrode 191 includes a material that transmits visible light. An insulating layer 194 is provided to cover the electrode 193. Light emitted from the light-emitting element 170 is emitted to the substrate 361 side through the coloring layer 134, the insulating layer 220, the opening 451, the electrode 311a, and the like.

The liquid crystal element 180 and the light emitting element 170 can exhibit various colors by changing the color of the colored layer depending on the pixel. The display device 300 can perform color display using the liquid crystal element 180. The display device 300 can perform color display using the light-emitting element 170.

The transistors 201, 203, 205, and 206 are all formed on the surface of the insulating layer 220 on the substrate 351 side. These transistors can be manufactured using the same process.

The transistor 203 is a transistor (also referred to as a switching transistor or a selection transistor) that controls pixel selection / non-selection. The transistor 205 is a transistor (also referred to as a drive transistor) that controls a current flowing through the light-emitting element 170.

Insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are provided on the substrate 351 side of the insulating layer 220. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. The insulating layer 212 is provided so as to cover the transistor 206 and the like. The insulating layer 213 is provided so as to cover the transistor 205 and the like. The insulating layer 214 functions as a planarization layer. Note that the number of insulating layers covering the transistor is not limited, and may be a single layer or two or more layers.

It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse for at least one of the insulating layers covering each transistor. Thereby, the insulating layer can function as a barrier film. With such a structure, impurities can be effectively prevented from diffusing from the outside with respect to the transistor, and a highly reliable display device can be realized.

The transistor 201, the transistor 203, the transistor 205, and the transistor 206 include a conductive layer 221a that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a conductive layer 222a and a conductive layer 222b that function as a source and a drain, and a semiconductor layer 231. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film.

In addition to the structures of the transistor 203 and the transistor 206, the transistor 201 and the transistor 205 include a conductive layer 223 that functions as a gate.

A structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistor 201 and the transistor 205. With such a structure, the threshold voltage of the transistor can be controlled. The transistor may be driven by connecting two gates and supplying the same signal thereto. Such a transistor can have higher field-effect mobility than other transistors, and can increase on-state current. As a result, a circuit that can be driven at high speed can be manufactured. Furthermore, the area occupied by the circuit portion can be reduced. By applying a transistor with a large on-state current, even if the number of wirings increases when the display device is enlarged or high-definition, signal delay in each wiring can be reduced, and display unevenness is suppressed. can do.

Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other of the two gates.

There is no limitation on the structure of the transistor included in the display device. The transistor included in the circuit 364 and the transistor included in the display portion 362 may have the same structure or different structures. The plurality of transistors included in the circuit 364 may have the same structure, or two or more structures may be used in combination. Similarly, the plurality of transistors included in the display portion 362 may have the same structure, or two or more structures may be used in combination.

For the conductive layer 223, a conductive material containing an oxide is preferably used. When the conductive film included in the conductive layer 223 is formed, oxygen can be supplied to the insulating layer 212 by being formed in an atmosphere containing oxygen. The proportion of oxygen gas in the film forming gas is preferably in the range of 90% to 100%. Oxygen supplied to the insulating layer 212 is supplied to the semiconductor layer 231 by a later heat treatment, so that oxygen vacancies in the semiconductor layer 231 can be reduced.

In particular, the conductive layer 223 is preferably formed using a low-resistance oxide semiconductor. At this time, an insulating film from which hydrogen is released, for example, a silicon nitride film or the like is preferably used for the insulating layer 213. Hydrogen is supplied into the conductive layer 223 during the formation of the insulating layer 213 or by a subsequent heat treatment, so that the electrical resistance of the conductive layer 223 can be effectively reduced.

A colored layer 134 is provided in contact with the insulating layer 213. The colored layer 134 is covered with the insulating layer 214.

A connection portion 204 is provided in a region of the substrate 351 that does not overlap with the substrate 361. In the connection portion 204, the wiring 365 is electrically connected to the FPC 372 through the connection layer 242. A conductive layer 311c and a conductive layer 311d are formed of the same material as the electrodes 311a and 311b so as to cover the concave portions provided in the resin layer 62a and the insulating layer 63 in the connection portion 204. The conductive layer 311c is exposed. Accordingly, the connection unit 204 and the FPC 372 can be electrically connected via the connection layer 242. By forming the conductive layer 311c and the conductive layer 311d so as to cover the recesses provided in the resin layer 62a and the insulating layer 63, the conductive layer 311c can be easily exposed on the upper surface of the connection portion 204.

A linear polarizing plate may be used as the polarizing plate 135 disposed on the outer surface of the substrate 361, but a circular polarizing plate may also be used. As a circularly-polarizing plate, what laminated | stacked the linearly-polarizing plate and the quarter wavelength phase difference plate, for example can be used. Thereby, external light reflection can be suppressed. In addition, a desired contrast may be realized by adjusting a cell gap, an alignment, a driving voltage, and the like of the liquid crystal element used for the liquid crystal element 180 in accordance with the type of the polarizing plate.

Various optical members can be arranged outside the substrate 361. Examples of the optical member include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a light collecting film. Further, on the outside of the substrate 361, an antistatic film that suppresses adhesion of dust, a water-repellent film that makes it difficult to adhere dirt, a hard coat film that suppresses generation of scratches due to use, and the like may be arranged.

For the substrate 351 and the substrate 361, glass, quartz, ceramic, sapphire, organic resin, or the like can be used, respectively. When a flexible material is used for the substrate 351 and the substrate 361, the flexibility of the display device can be increased.

As the liquid crystal element 180, for example, a liquid crystal element to which a vertical alignment (VA) mode is applied can be used. As the vertical alignment mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.

As the liquid crystal element 180, liquid crystal elements to which various modes are applied can be used. For example, in addition to the VA mode, a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetrical Aligned Micro-cell) mode Further, a liquid crystal element to which an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (Antiferroelectric Liquid Crystal) mode, or the like is applied can be used.

The liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal. The optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). As the liquid crystal used in the liquid crystal element, a thermotropic liquid crystal, a low-molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC), a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used. . These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.

As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used, and an optimal liquid crystal material may be used according to an applied mode or design.

In order to control the alignment of the liquid crystal, an alignment film can be provided. Note that in the case of employing a horizontal electric field mode, liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used. The blue phase is one of the liquid crystal phases. When the temperature of the cholesteric liquid crystal is increased, the blue phase appears immediately before the transition from the cholesteric phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with several percent by weight or more of a chiral agent is used for the liquid crystal in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and is optically isotropic. In addition, a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since it is not necessary to provide an alignment film, a rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .

In the case of using a reflective liquid crystal element, a polarizing plate 135 is provided on the display surface side. Separately from this, it is preferable to arrange a light diffusing plate on the display surface side because the visibility can be improved.

A front light may be provided outside the polarizing plate 135. As the front light, an edge light type front light is preferably used. It is preferable to use a front light including an LED (Light Emitting Diode) because power consumption can be reduced.

As the adhesive layer, various curable adhesives such as an ultraviolet curable photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like. In particular, a material with low moisture permeability such as epoxy resin is preferable. Alternatively, a two-component mixed resin may be used. Further, an adhesive sheet or the like may be used.

As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

The light emitting element 170 includes a top emission type, a bottom emission type, a dual emission type, and the like. A conductive film that transmits visible light is used for the electrode from which light is extracted. In addition, a conductive film that reflects visible light is preferably used for the electrode from which light is not extracted.

The EL layer 192 includes at least a light-emitting layer. The EL layer 192 is a layer other than the light-emitting layer and is a substance having a high hole-injecting property, a substance having a high hole-transporting property, a hole blocking material, a substance having a high electron-transporting property, a substance having a high electron-injecting property, or a bipolar property A layer containing a substance (a substance having a high electron transporting property and a high hole transporting property) or the like may be further included.

For the EL layer 192, either a low molecular compound or a high molecular compound can be used, and an inorganic compound may be included. The layers constituting the EL layer 192 can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.

The EL layer 192 may include an inorganic compound such as a quantum dot. For example, a quantum dot can be used for a light emitting layer to function as a light emitting material. As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used. Alternatively, a material including an element group of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 may be used. Alternatively, a quantum dot material containing an element such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, or aluminum may be used.

Note that light with high color purity can be extracted from the display device by applying a combination of a color filter (colored layer) and a microcavity structure (optical adjustment layer). The film thickness of the optical adjustment layer is changed according to the color of each pixel.

In addition to the gate, source, and drain of the transistor, materials that can be used for conductive layers such as various wirings and electrodes constituting the display device include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, A metal such as tantalum or tungsten, or an alloy containing the same as a main component can be given. A film containing any of these materials can be used as a single layer or a stacked structure.

As the light-transmitting conductive material, conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride (eg, titanium nitride) of the metal material may be used. Note that in the case where a metal material or an alloy material (or a nitride thereof) is used, it may be thin enough to have a light-transmitting property. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased. These can also be used for conductive layers such as various wirings and electrodes constituting the display device and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) included in the display element.

Examples of the insulating material that can be used for each insulating layer include inorganic insulating materials such as resins such as acrylic and epoxy, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.

<Configuration example 2>
A display device 300A illustrated in FIG. 4 is mainly different from the display device 300 in that it does not include the transistor 201, the transistor 203, the transistor 205, and the transistor 206 but includes the transistor 281, the transistor 284, the transistor 285, and the transistor 286. .

Like the transistor 284 and the transistor 285, two transistors included in the display device may be partially stacked. Thereby, since the area occupied by the pixel circuit can be reduced, the definition can be increased. In addition, the light emitting area of the light emitting element 170 can be increased and the aperture ratio can be improved. If the light-emitting element 170 has a high aperture ratio, the current density for obtaining necessary luminance can be reduced, so that reliability is improved.

The transistor 281, the transistor 284, and the transistor 286 each include a conductive layer 221a, an insulating layer 211, a semiconductor layer 231, a conductive layer 222a, and a conductive layer 222b. The conductive layer 221a overlaps with the semiconductor layer 231 with the insulating layer 211 interposed therebetween. The conductive layer 222 a and the conductive layer 222 b are electrically connected to the semiconductor layer 231. The transistor 281 includes a conductive layer 223.

The transistor 285 includes a conductive layer 222b, an insulating layer 217, a semiconductor layer 261, a conductive layer 223, an insulating layer 212, an insulating layer 213, a conductive layer 263a, and a conductive layer 263b. The conductive layer 222b overlaps with the semiconductor layer 261 with the insulating layer 217 interposed therebetween. The conductive layer 223 overlaps with the semiconductor layer 261 with the insulating layer 212 and the insulating layer 213 interposed therebetween. The conductive layer 263a and the conductive layer 263b are electrically connected to the semiconductor layer 261.

The conductive layer 221a functions as a gate. The insulating layer 211 functions as a gate insulating layer. The conductive layer 222a functions as one of a source and a drain. The conductive layer 222b included in the transistor 286 functions as the other of the source and the drain.

The conductive layer 222b shared by the transistor 284 and the transistor 285 includes a portion functioning as the other of the source and the drain of the transistor 284 and a portion functioning as the gate of the transistor 285. The insulating layer 217, the insulating layer 212, and the insulating layer 213 function as gate insulating layers. One of the conductive layer 263a and the conductive layer 263b functions as a source, and the other functions as a drain. The conductive layer 223 functions as a gate.

<Configuration example 3>
FIG. 5A is a cross-sectional view of a display portion of the display device 300B.

The display device 300B is different from the display device 300 in that the display device 300B does not include the colored layer 131. Since other configurations are the same as those of the display device 300, detailed description thereof is omitted.

The liquid crystal element 180 exhibits white. Since the colored layer 131 is not included, the display device 300 can perform display in black and white or gray scale using the liquid crystal element 180.

<Configuration example 4>
A display device 300C illustrated in FIG. 5B is different from the display device 300B in that the EL layer 192 is separately applied and the coloring layer 134 is not provided. Since other configurations are the same as those of the display device 300B, detailed description thereof is omitted.

In the light-emitting element 170 to which the separate coating method is applied, it is sufficient that at least one layer (typically, the light-emitting layer) of the EL layer 192 is coated, and all the layers constituting the EL layer are coated. It may be divided.

In one embodiment of the present invention, the structure of the transistor included in the display device is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor may be used. Further, any transistor structure of a top gate structure or a bottom gate structure may be employed. Alternatively, gate electrodes may be provided above and below the channel.

6A to 6E illustrate structural examples of transistors.

A transistor 110a illustrated in FIG. 6A is a top-gate transistor.

The transistor 110a includes a conductive layer 221, an insulating layer 211, a semiconductor layer 231, an insulating layer 212, a conductive layer 222a, and a conductive layer 222b. The semiconductor layer 231 is provided over the insulating layer 151. The conductive layer 221 overlaps with the semiconductor layer 231 with the insulating layer 211 interposed therebetween. The conductive layers 222 a and 222 b are electrically connected to the semiconductor layer 231 through openings provided in the insulating layers 211 and 212.

The conductive layer 221 functions as a gate. The insulating layer 211 functions as a gate insulating layer. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

In the transistor 110a, the physical distance between the conductive layer 221 and the conductive layer 222a or the conductive layer 222b can be easily increased, so that the parasitic capacitance between them can be reduced.

A transistor 110b illustrated in FIG. 6B includes a conductive layer 223 and an insulating layer 218 in addition to the structure of the transistor 110a. The conductive layer 223 is provided over the insulating layer 151 and overlaps with the semiconductor layer 231. The insulating layer 218 is provided so as to cover the conductive layer 223 and the insulating layer 151.

The conductive layer 223 functions as one of a pair of gates. Therefore, the on-state current of the transistor can be increased, the threshold voltage can be controlled, and the like.

6C to 6E illustrate examples of structures in which two transistors are stacked. The structures of the two stacked transistors can be determined independently, and are not limited to the combinations of FIGS.

FIG. 6C illustrates a structure in which the transistor 110c and the transistor 110d are stacked. The transistor 110c has two gates. The transistor 110d has a bottom gate structure. Note that the transistor 110c may include one gate (top gate structure). The transistor 110d may have two gates.

The transistor 110c includes a conductive layer 223, an insulating layer 218, a semiconductor layer 231, a conductive layer 221, an insulating layer 211, a conductive layer 222a, and a conductive layer 222b. The conductive layer 223 is provided over the insulating layer 151. The conductive layer 223 overlaps with the semiconductor layer 231 with the insulating layer 218 interposed therebetween. The insulating layer 218 is provided so as to cover the conductive layer 223 and the insulating layer 151. The conductive layer 221 overlaps with the semiconductor layer 231 with the insulating layer 211 interposed therebetween. 6C illustrates an example in which the insulating layer 211 is provided only in a portion overlapping with the conductive layer 221, but the insulating layer 211 covers an end portion of the semiconductor layer 231 as illustrated in FIG. 6B and the like. It may be provided as follows. The conductive layer 222 a and the conductive layer 222 b are electrically connected to the semiconductor layer 231 through an opening provided in the insulating layer 212.

The transistor 110d includes a conductive layer 222b, an insulating layer 213, a semiconductor layer 261, a conductive layer 263a, and a conductive layer 263b. The conductive layer 222 b includes a region overlapping with the semiconductor layer 261 with the insulating layer 213 interposed therebetween. The insulating layer 213 is provided so as to cover the conductive layer 222b. The conductive layer 263a and the conductive layer 263b are electrically connected to the semiconductor layer 261.

The conductive layer 221 and the conductive layer 223 each function as a gate of the transistor 110c. The insulating layer 218 and the insulating layer 211 function as a gate insulating layer of the transistor 110c. The conductive layer 222a functions as one of a source and a drain of the transistor 110c.

The conductive layer 222b includes a portion functioning as the other of the source and the drain of the transistor 110c and a portion functioning as the gate of the transistor 110d. The insulating layer 213 functions as a gate insulating layer of the transistor 110d. One of the conductive layer 263a and the conductive layer 263b functions as a source of the transistor 110d, and the other functions as a drain of the transistor 110d.

The transistors 110c and 110d are preferably applied to the pixel circuit of the light-emitting element 170. For example, the transistor 110c can be used as a selection transistor, and the transistor 110d can be used as a driving transistor.

The conductive layer 263b is electrically connected to an electrode 191 functioning as a pixel electrode of the light-emitting element through an opening provided in the insulating layer 217 and the insulating layer 214.

FIG. 6D illustrates a structure in which the transistor 110e and the transistor 110f are stacked. The transistor 110e has a bottom gate structure. The transistor 110f has two gates. The transistor 110e may have two gates.

The transistor 110e includes a conductive layer 221, an insulating layer 211, a semiconductor layer 231, a conductive layer 222a, and a conductive layer 222b. The conductive layer 221 is provided over the insulating layer 151. The conductive layer 221 overlaps with the semiconductor layer 231 with the insulating layer 211 interposed therebetween. The insulating layer 211 is provided to cover the conductive layer 221 and the insulating layer 151. The conductive layer 222 a and the conductive layer 222 b are electrically connected to the semiconductor layer 231.

The transistor 110f includes a conductive layer 222b, an insulating layer 212, a semiconductor layer 261, a conductive layer 223, an insulating layer 218, an insulating layer 213, a conductive layer 263a, and a conductive layer 263b. The conductive layer 222 b includes a region overlapping with the semiconductor layer 261 with the insulating layer 212 interposed therebetween. The insulating layer 212 is provided so as to cover the conductive layer 222b. The conductive layers 263 a and 263 b are electrically connected to the semiconductor layer 261 through openings provided in the insulating layer 213. The conductive layer 223 overlaps with the semiconductor layer 261 with the insulating layer 218 provided therebetween. The insulating layer 218 is provided in a portion overlapping with the conductive layer 223.

The conductive layer 221 functions as the gate of the transistor 110e. The insulating layer 211 functions as a gate insulating layer of the transistor 110e. The conductive layer 222a functions as one of a source and a drain of the transistor 110e.

The conductive layer 222b includes a portion functioning as the other of the source and the drain of the transistor 110e and a portion functioning as the gate of the transistor 110f. The conductive layer 223 functions as the gate of the transistor 110f. The insulating layer 212 and the insulating layer 218 each function as a gate insulating layer of the transistor 110f. One of the conductive layer 263a and the conductive layer 263b functions as a source of the transistor 110f, and the other functions as a drain of the transistor 110f.

The conductive layer 263b is electrically connected to an electrode 191 functioning as a pixel electrode of the light-emitting element through an opening provided in the insulating layer 214.

FIG. 6E illustrates a structure in which the transistor 110g and the transistor 110h are stacked. The transistor 110g has a top gate structure. The transistor 110h has two gates. Note that the transistor 110g may include two gates.

The transistor 110g includes a semiconductor layer 231, a conductive layer 221, an insulating layer 211, a conductive layer 222a, and a conductive layer 222b. The semiconductor layer 231 is provided over the insulating layer 151. The conductive layer 221 overlaps with the semiconductor layer 231 with the insulating layer 211 interposed therebetween. The insulating layer 211 is provided so as to overlap with the conductive layer 221. The conductive layer 222 a and the conductive layer 222 b are electrically connected to the semiconductor layer 231 through an opening provided in the insulating layer 212.

The transistor 110h includes a conductive layer 222b, an insulating layer 213, a semiconductor layer 261, a conductive layer 223, an insulating layer 218, an insulating layer 217, a conductive layer 263a, and a conductive layer 263b. The conductive layer 222 b includes a region overlapping with the semiconductor layer 261 with the insulating layer 213 interposed therebetween. The insulating layer 213 is provided so as to cover the conductive layer 222b. The conductive layers 263 a and 263 b are electrically connected to the semiconductor layer 261 through openings provided in the insulating layer 217. The conductive layer 223 overlaps with the semiconductor layer 261 with the insulating layer 218 provided therebetween. The insulating layer 218 is provided in a portion overlapping with the conductive layer 223.

The conductive layer 221 functions as the gate of the transistor 110g. The insulating layer 211 functions as a gate insulating layer of the transistor 110g. The conductive layer 222a functions as one of a source and a drain of the transistor 110g.

The conductive layer 222b includes a portion functioning as the other of the source and the drain of the transistor 110g and a portion functioning as the gate of the transistor 110h. The conductive layer 223 functions as the gate of the transistor 110h. The insulating layer 213 and the insulating layer 218 each function as a gate insulating layer of the transistor 110h. One of the conductive layer 263a and the conductive layer 263b functions as a source of the transistor 110h, and the other functions as a drain of the transistor 110h.

The conductive layer 263b is electrically connected to an electrode 191 functioning as a pixel electrode of the light-emitting element through an opening provided in the insulating layer 214.

Hereinafter, a method for manufacturing the display device of this embodiment will be specifically described with reference to FIGS.

Note that a thin film (an insulating film, a semiconductor film, a conductive film, or the like) included in the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, or a pulse laser deposition (PLD: Pulse Laser Deposition). ) Method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like. The CVD method may be a plasma enhanced chemical vapor deposition (PECVD) method or a thermal CVD method. As an example of the thermal CVD method, a metal organic chemical vapor deposition (MOCVD) method may be used.

Thin films (insulating films, semiconductor films, conductive films, etc.) constituting display devices are spin coat, dip, spray coating, ink jet, dispense, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain coat, knife It can be formed by a method such as coating.

When a thin film included in the display device is processed, the thin film can be processed using a lithography method or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like. As a photolithography method, a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. After forming a photosensitive thin film, exposure and development are performed. And a method for processing the thin film into a desired shape.

When light is used in the lithography method, for example, light used for exposure can be i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or light in which these are mixed. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Further, exposure may be performed by an immersion exposure technique. Further, extreme ultraviolet light (EUV: Extreme Ultra-violet) or X-rays may be used as light used for exposure. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.

For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.

<Example of manufacturing method of display device>
Hereinafter, an example of a method for manufacturing the display device 300 illustrated in FIG. 3 will be described. 7 to 23, the manufacturing method will be described with particular attention to the display portion 362 and the external connection portion of the display device 300.

First, the colored layer 131 is formed over the substrate 361 (FIG. 7A). The colored layer 131 can be processed into an island shape by a photolithography method or the like by being formed using a photosensitive material. Note that in the circuit 364 and the like illustrated in FIG. 3, the light-blocking layer 132 is provided over the substrate 361.

Next, the insulating layer 121 is formed over the colored layer 131.

The insulating layer 121 preferably functions as a planarization layer. Examples of the insulating layer 121 include acrylic resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, and phenol resin.

An inorganic insulating film may be applied to the insulating layer 121. In the case where an inorganic insulating film is used as the insulating layer 121, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Two or more of the above insulating films may be stacked.

Next, the electrode 113 is formed. The electrode 113 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask. The electrode 113 is formed using a conductive material that transmits visible light.

Next, the insulating layer 117 is formed over the electrode 113. An organic insulating film is preferably used for the insulating layer 117.

Next, an alignment film 133b is formed over the electrode 113 and the insulating layer 117 (FIG. 7A). The alignment film 133b can be formed by performing a rubbing process after forming a thin film such as a resin.

In addition, the steps shown in FIGS. 7B to 10B are performed independently of the steps described with reference to FIG.

First, the resin layer 62 having a recess is formed over the manufacturing substrate 61, and the insulating layer 63 is formed over the resin layer 62 (FIGS. 7B and 7C).

In this step, a material that causes separation in the interface between the manufacturing substrate 61 and the resin layer 62, the interface between the resin layer 62 and the insulating layer 63, or the resin layer 62 when the manufacturing substrate 61 is peeled is selected. In this embodiment, the case where separation occurs at the interface between the insulating layer 63 and the resin layer 62 is illustrated, but the present invention is not limited to this depending on the combination of materials used for the resin layer 62 and the insulating layer 63.

The manufacturing substrate 61 is rigid to such an extent that it can be easily transported, and has heat resistance against the temperature required for the manufacturing process. Examples of a material that can be used for the manufacturing substrate 61 include glass, quartz, ceramic, sapphire, resin, semiconductor, metal, and alloy. Examples of the glass include alkali-free glass, barium borosilicate glass, and alumino borosilicate glass.

The resin layer 62 is formed using a thermosetting material. The material may have photosensitivity at the same time.

A material that can be used for the resin layer 62 is preferably a polyimide resin. In addition, examples of materials that can be used for the resin layer 62 include acrylic resins, epoxy resins, polyamide resins, polyimide amide resins, siloxane resins, benzocyclobutene resins, and phenol resins. In addition, it is preferable that these have photosensitivity.

The resin layer 62 is formed by forming a film having a thickness of 0.1 μm to 3 μm and heating. By heating, degassing components (for example, hydrogen, water, etc.) in the resin layer 62 can be reduced. The heating is preferably performed at a temperature higher than the manufacturing temperature of each layer formed on the resin layer 62. For example, in the case where the transistor manufacturing temperature is up to 350 ° C., it is preferable that the film to be the resin layer 62 be heated at a temperature higher than 350 ° C. Thereby, degassing from the resin layer 62 in the transistor manufacturing process can be significantly suppressed.

Specifically, the heating is preferably performed at 350 ° C. or more and 450 ° C. or less, and the upper limit temperature of heating is more preferably 400 ° C. or less, further preferably less than 400 ° C., and further preferably less than 375 ° C.

In one embodiment of the present invention, a material having photosensitivity is preferably used; in this case, part of the material can be removed by a lithography method using light. Specifically, heat treatment (also referred to as pre-bake treatment) for removing the solvent is performed after the material is formed, and then exposure is performed using a photomask. Subsequently, unnecessary portions can be removed by performing development processing. In addition, it is preferable to perform heat treatment (also referred to as post-bake treatment) thereafter. In the post-bake treatment, it is preferable to heat at a temperature higher than the production temperature of each layer formed on the resin layer 62 as described above.

Although the resin layer 62 has flexibility, the resin layer 62 can be easily transported by using a manufacturing substrate 61 having a lower flexibility than the resin layer 62.

Examples of the method for forming the resin layer 62 include spin coating, dip coating, spray coating, ink jet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, and the like.

The resin layer 62 is preferably formed using a spin coater. By using the spin coating method, a thin film can be uniformly formed on a large substrate.

The resin layer 62 is preferably formed using a solution having a viscosity of 5 cP to less than 500 cP, preferably a viscosity of 5 cP to less than 100 cP, and preferably a viscosity of 10 cP to 50 cP. The lower the viscosity of the solution, the easier the application. In addition, the lower the viscosity of the solution, the more air bubbles can be prevented and the better the film can be formed.

The thickness of the resin layer 62 is preferably 0.01 μm or more and less than 10 μm, more preferably 0.1 μm or more and 3 μm or less, and further preferably 0.5 μm or more and 1 μm or less. By using a low viscosity solution, it becomes easy to form the resin layer 23 thin.

Further, the thermal expansion coefficient of the resin layer 62 is preferably 0.1 ppm / ° C. or more and 20 ppm / ° C. or less, and more preferably 0.1 ppm / ° C. or more and 10 ppm / ° C. or less. As the thermal expansion coefficient of the resin layer 62 is lower, the transistor or the like can be prevented from being damaged by heating.

Note that in one embodiment of the present invention, a part of the resin layer 62 corresponding to the external connection portion in the thickness direction is removed, and the resin layer 62 includes the first region and the second region whose heat is lower than that of the first region. The resin layer 62 having the region (also referred to as a recess) is formed.

When a photosensitive material is used as the material of the resin layer 62, a heat treatment (also referred to as a pre-bake treatment) for removing the solvent is performed under the above-described conditions after the material is formed, and then a photomask is used. Perform exposure. Subsequently, unnecessary portions can be removed by performing development processing. Next, the film processed into a desired shape is heated (also referred to as post-baking treatment) to form the resin layer 62 (FIG. 7B). When the exposure is performed, the resin layer 62 having a concave portion can be formed by reducing the exposure amount as compared with the condition for providing an opening in the resin layer 62. For example, methods such as shortening the exposure time, weakening the light intensity, and shifting the focus of light than the exposure conditions for forming the opening in the resin layer 62 can be mentioned. A multi-tone mask may be used.

Further, after forming the material of the resin layer 62, before the pre-bake process or after the pre-bake process and before the post-bake process, the concave portion is formed by pressing the mold having a desired shape against the formed film. May be formed.

When the side surface of the concave portion of the resin layer 62 is tapered, the coverage of the film formed on the concave portion of the resin layer 62 is improved. Therefore, when a photosensitive resin is used, a positive type resin is used. When pushing, it is preferable to use a die having a tapered shape.

By providing the resin layer 62 with a second region that is thinner than the first region, and further disposing the conductive layer so as to cover the second region, the conductive layer can be easily exposed in a later step. Further, even if the resin layer is removed until the conductive layer is exposed, a part of the resin layer remains, so that the remaining resin layer can be used as a protective layer.

The insulating layer 63 is formed at a temperature not higher than the heat resistance temperature of the resin layer 62 (FIG. 7C). Moreover, it is preferable to form at the temperature lower than the heating temperature in the heating process of the above-mentioned resin layer 62.

The insulating layer 63 can be used as a barrier layer that prevents impurities contained in the resin layer 62 from diffusing into transistors and display elements to be formed later. For example, the insulating layer 63 preferably prevents diffusion of moisture or the like contained in the resin layer 62 to the transistor or the display element when the resin layer 62 is heated. Therefore, it is preferable that the insulating layer 63 has a high barrier property.

As the insulating layer 63, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Two or more of the above insulating films may be stacked. In particular, it is preferable to form a silicon nitride film on the resin layer 23 and form a silicon oxide film on the silicon nitride film. The inorganic insulating film is denser and has a higher barrier property as the deposition temperature is higher, and thus it is preferable to form the inorganic insulating film at a high temperature.

When an inorganic insulating film is used for the insulating layer 63, the formation temperature is preferably room temperature (25 ° C.) or higher and 350 ° C. or lower, more preferably 100 ° C. or higher and 300 ° C. or lower.

When the surface of the resin layer 62 has irregularities, the insulating layer 63 preferably covers the irregularities. The insulating layer 63 may have a function as a planarization layer that planarizes the unevenness. For example, the insulating layer 63 is preferably used by stacking an organic insulating material and an inorganic insulating material. Examples of the organic insulating material include resins that can be used for the resin layer 62.

When an organic insulating film is used for the insulating layer 63, the temperature at the time of formation is preferably room temperature to 350 ° C., more preferably room temperature to 300 ° C.

Note that by forming the insulating layer 63, it is possible to suppress the expansion and contraction of the resin layer 62 due to the subsequent display device manufacturing process, and the yield can be improved.

Next, the electrode 311a and the conductive layer 311c are formed over the insulating layer 63, and the electrode 311b and the conductive layer 311d are formed over the electrode 311a (FIG. 7D). The electrode 311b has an opening 451 on the electrode 311a. The electrode 311a, the electrode 311b, the conductive layer 311c, and the conductive layer 311d can each be formed by forming a resist film after forming a conductive film, etching the conductive film, and then removing the resist mask. The electrode 311a is formed using a conductive material that transmits visible light. The electrode 311b is formed using a conductive material that reflects visible light. The conductive layer 311c is formed using the same material as the electrode 311a, and the conductive layer 311d is formed using the same material as the electrode 311b.

Next, the insulating layer 220 is formed (FIG. 8A). Then, an opening reaching the electrode 311b and the conductive layer 311d is provided in the insulating layer 220.

The insulating layer 220 can be used as a barrier layer that prevents impurities contained in the resin layer 62 from diffusing into transistors and display elements to be formed later. In the case where an organic material is used for the resin layer 62, the insulating layer 220 preferably prevents diffusion of moisture or the like contained in the resin layer 62 to the transistor or the display element when the resin layer 62 is heated. Therefore, the insulating layer 220 preferably has a high barrier property.

As the insulating layer 220, an inorganic insulating film, a resin, or the like that can be used for the insulating layer 121 can be used.

Next, the transistor 203, the transistor 205, and the transistor 206 are formed over the insulating layer 220.

A semiconductor material used for the transistor is not particularly limited, and for example, a Group 14 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

Here, the case where a bottom-gate transistor including an oxide semiconductor layer as the semiconductor layer 231 is manufactured as the transistor 203 and the transistor 206 is described. The transistor 205 has a structure in which a conductive layer 223 and an insulating layer 212 are added to the structures of the transistor 203 and the transistor 206, and includes two gates.

An oxide semiconductor is preferably used for the semiconductor of the transistor. When a semiconductor material having a wider band gap and lower carrier density than silicon is used, current in an off state of the transistor can be reduced.

Specifically, first, the conductive layer 221a, the conductive layer 221b, and the conductive layer 221c are formed over the insulating layer 220. The conductive layers 221a, 221b, and 221c can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask. Here, the conductive layer 221b and the electrode 311b, and the conductive layer 221c and the conductive layer 311d are connected to each other through the opening of the insulating layer 220.

Subsequently, the insulating layer 211 is formed.

As the insulating layer 211, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Two or more of the above insulating films may be stacked.

The inorganic insulating film is denser and has a higher barrier property as the deposition temperature is higher, and thus it is preferable to form the inorganic insulating film at a high temperature. The substrate temperature during the formation of the inorganic insulating film is preferably room temperature (25 ° C.) or higher and 350 ° C. or lower, more preferably 100 ° C. or higher and 300 ° C. or lower.

Subsequently, the semiconductor layer 231 is formed. In this embodiment, an oxide semiconductor layer is formed as the semiconductor layer 231. The oxide semiconductor layer can be formed by forming an oxide semiconductor film, forming a resist mask, etching the oxide semiconductor film, and then removing the resist mask.

The substrate temperature at the time of forming the oxide semiconductor film is preferably 350 ° C. or lower, more preferably room temperature or higher and 200 ° C. or lower, and further preferably room temperature or higher and 130 ° C. or lower. The substrate temperature is preferably lower than the temperature heated when forming the resin layer 62 because the influence of degassing from the resin layer 62 can be reduced. The same applies to the case where the insulating layer 220 is formed of resin.

The oxide semiconductor film can be formed using either an inert gas or an oxygen gas. Note that there is no particular limitation on the oxygen flow rate ratio (oxygen partial pressure) in forming the oxide semiconductor film. However, in the case of obtaining a transistor with high field-effect mobility, the flow rate ratio of oxygen (oxygen partial pressure) during formation of the oxide semiconductor film is preferably 0% or more and 30% or less, and is preferably 5% or more and 30% or less. Is more preferably 7% or more and 15% or less.

The oxide semiconductor film preferably contains at least indium or zinc. In particular, it is preferable to contain indium and zinc.

The oxide semiconductor preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. More preferably, it is 3 eV or more. In this manner, off-state current of a transistor can be reduced by using an oxide semiconductor with a wide energy gap.

The oxide semiconductor film can be formed by a sputtering method. In addition, for example, a PLD method, a PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like may be used.

Note that an example of an oxide semiconductor is described in Embodiment 4.

Subsequently, a conductive layer 222a and a conductive layer 222b are formed. The conductive layers 222a and 222b can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask. The conductive layer 222a and the conductive layer 222b are each connected to the semiconductor layer 231. Here, the conductive layer 222a included in the transistor 206 is electrically connected to the conductive layer 221b. Accordingly, in the connection portion 207, the electrode 311b and the conductive layer 222a can be electrically connected.

Note that when the conductive layers 222a and 222b are processed, part of the semiconductor layer 231 which is not covered with the resist mask may be thinned by etching.

As described above, the transistor 206 can be manufactured (FIG. 8A). In the transistor 206, part of the conductive layer 221a functions as a gate, part of the insulating layer 211 functions as a gate insulating layer, and the conductive layer 222a and the conductive layer 222b each function as either a source or a drain. . The transistor 203 can be formed in a similar manner.

Next, the insulating layer 212 that covers the transistor 206 is formed, and the conductive layer 223 is formed over the insulating layer 212.

The insulating layer 212 can be formed by a method similar to that of the insulating layer 211.

The conductive layer 223 included in the transistor 205 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

As described above, the transistor 205 can be manufactured (FIG. 8A). In the transistor 205, part of the conductive layer 221a and part of the conductive layer 223 function as a gate, part of the insulating layer 211 and part of the insulating layer 212 function as a gate insulating layer, and the conductive layer 222a and the conductive layer Each of 222b functions as either a source or a drain.

Next, the insulating layer 213 is formed (FIG. 8A). The insulating layer 213 can be formed by a method similar to that of the insulating layer 211.

For the insulating layer 212, an oxide insulating film such as a silicon oxide film or a silicon oxynitride film formed in an atmosphere containing oxygen is preferably used. Further, an insulating film that hardly diffuses and transmits oxygen such as a silicon nitride film is preferably stacked as the insulating layer 213 over the silicon oxide film or the silicon oxynitride film. An oxide insulating film formed in an atmosphere containing oxygen can be an insulating film from which a large amount of oxygen is easily released by heating. By performing heat treatment in a state where such an oxide insulating film that releases oxygen and an insulating film that hardly diffuses and transmits oxygen are stacked, oxygen can be supplied to the oxide semiconductor layer. As a result, oxygen vacancies in the oxide semiconductor layer and defects at the interface between the oxide semiconductor layer and the insulating layer 212 can be repaired, and the defect level can be reduced. Thereby, a display device with extremely high reliability can be realized.

Next, the coloring layer 134 is formed over the insulating layer 213 (FIG. 8A), and then the insulating layer 214 is formed (FIG. 8B). The colored layer 134 is disposed so as to overlap with the opening 451 of the electrode 311b.

The colored layer 134 can be formed by a method similar to that of the colored layer 131. The insulating layer 214 is a layer having a formation surface of a display element to be formed later, and thus preferably functions as a planarization layer. As the insulating layer 214, a resin or an inorganic insulating film that can be used for the insulating layer 121 can be used.

Next, an opening reaching the conductive layer 222b included in the transistor 205 is formed in the insulating layer 212, the insulating layer 213, and the insulating layer 214.

Next, the electrode 191 is formed (FIG. 8B). The electrode 191 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask. Here, the conductive layer 222b included in the transistor 205 and the electrode 191 are connected. The electrode 191 is formed using a conductive material that transmits visible light.

Next, an insulating layer 216 that covers an end portion of the electrode 191 is formed (FIG. 9A). As the insulating layer 216, a resin or an inorganic insulating film that can be used for the insulating layer 121 can be used. The insulating layer 216 has an opening in a portion overlapping with the electrode 191.

Next, an EL layer 192 and an electrode 193 are formed (FIG. 9A). A part of the electrode 193 functions as a common electrode of the light-emitting element 170. The electrode 193 is formed using a conductive material that reflects visible light.

The EL layer 192 can be formed by a method such as an evaporation method, a coating method, a printing method, or a discharge method. In the case where the EL layer 192 is separately formed for each pixel, the EL layer 192 can be formed by an evaporation method using a shielding mask such as a metal mask, an inkjet method, or the like. In the case where the EL layer 192 is not formed for each pixel, an evaporation method that does not use a metal mask can be used.

For the EL layer 192, either a low molecular compound or a high molecular compound can be used, and an inorganic compound may be included.

Each step performed after the formation of the EL layer 192 is performed so that the temperature applied to the EL layer 192 is equal to or lower than the heat resistant temperature of the EL layer 192. The electrode 193 can be formed by an evaporation method, a sputtering method, or the like.

As described above, the light-emitting element 170 can be formed (FIG. 9A). The light-emitting element 170 has a structure in which an electrode 191 that partially functions as a pixel electrode, an EL layer 192, and an electrode 193 that partially functions as a common electrode are stacked. The light-emitting element 170 is manufactured so that the light-emitting region overlaps with the colored layer 134 and the opening 451 of the electrode 311b.

Although an example in which a bottom emission light-emitting element is manufactured as the light-emitting element 170 is described here, one embodiment of the present invention is not limited thereto.

The light emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode from which light is extracted. In addition, a conductive film that reflects visible light is preferably used for the electrode from which light is not extracted.

Next, an insulating layer 194 is formed so as to cover the electrode 193 (FIG. 9A). The insulating layer 194 functions as a protective layer that suppresses diffusion of impurities such as water into the light-emitting element 170. The light emitting element 170 is sealed with the insulating layer 194. After the electrode 193 is formed, the insulating layer 194 is preferably formed without being exposed to the atmosphere.

As the insulating layer 194, for example, an inorganic insulating film that can be used for the above-described insulating layer 121 can be used. In particular, an inorganic insulating film having a high barrier property is preferably included. Alternatively, an inorganic insulating film and an organic insulating film may be stacked.

The substrate temperature when the insulating layer 194 is formed is preferably equal to or lower than the heat resistance temperature of the EL layer 192. The insulating layer 194 can be formed by an ALD method, a sputtering method, or the like. The ALD method and the sputtering method are preferable because they can be formed at a low temperature. Use of the ALD method is preferable because coverage of the insulating layer 194 is favorable.

Next, the substrate 351 is attached to the surface of the insulating layer 194 with the use of the adhesive layer 142 (FIG. 9B).

For the adhesive layer 142, various curable adhesives such as an ultraviolet curable photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Further, an adhesive sheet or the like may be used.

Examples of the substrate 351 include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES). ) Resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) Resin, ABS resin, cellulose nanofiber, etc. can be used. Various materials such as glass, quartz, resin, metal, alloy, and semiconductor may be used for the substrate 351. For the substrate 351, various materials such as glass, quartz, resin, metal, alloy, and semiconductor having a thickness enough to be flexible may be used.

Next, the resin layer 62 is irradiated with laser light through the manufacturing substrate 61.

The resin layer 62 is weakened by the laser light irradiation. Alternatively, the adhesion between the resin layer 62 and the manufacturing substrate 61 is reduced by irradiation with laser light.

As the laser light, light having a wavelength that is at least partially transmitted through the manufacturing substrate 61 and absorbed by the resin layer 62 is selected and used. The laser light is preferably light in the wavelength region from visible light to ultraviolet light. For example, light with a wavelength of 200 nm to 400 nm, preferably light with a wavelength of 250 nm to 350 nm can be used. In particular, it is preferable to use an excimer laser having a wavelength of 308 nm because the productivity is excellent. Since the excimer laser is also used for laser crystallization in LTPS, an existing LTPS production line device can be used, and new equipment investment is not required, which is preferable. Alternatively, a solid-state UV laser (also referred to as a semiconductor UV laser) such as a UV laser having a wavelength of 355 nm, which is the third harmonic of the Nd: YAG laser, may be used. Since a solid-state laser does not use gas, the running cost can be reduced to about 1/3 compared to an excimer laser, which is preferable. Further, a pulse laser such as a picosecond laser may be used.

In the case where a linear laser beam is used as the laser beam, the laser beam is scanned by moving the manufacturing substrate 61 and the light source relatively, and the laser beam is irradiated over a region to be peeled off.

Since a solid-state laser does not use gas, the running cost can be reduced to about 1/3 compared to an excimer laser, which is preferable.

Next, the manufacturing substrate 61 and the insulating layer 63 are separated (FIG. 10A). FIG. 10A shows an example in which separation occurs in the resin layer 62. A part of the resin layer (resin layer 62a) remains on the manufacturing substrate 61. The resin layer 62b remaining on the insulating layer 31 side is thinner than the resin layer 62 in FIG.

The separation surface can be in various positions depending on the material and the forming method of the resin layer 62 and the manufacturing substrate 61, the light irradiation conditions, and the like.

Although FIG. 10A shows an example in which separation occurs in the resin layer 62, separation may occur in the resin layer 62 and at the interface between the insulating layer 63 and the resin layer 62. A part of the resin layer (resin layer 62a) remains on the manufacturing substrate 61. The insulating layer 63 is exposed by the separation. The resin layer 62b remaining on the insulating layer 63 side is thinner than the resin layer 62 in FIG. 9B.

In addition, separation may occur at the interface between the manufacturing substrate 61 and the resin layer 62. When the resin layer 62 is exposed due to the separation, separation may occur in the resin layer 62.

Thus, by forming the conductive layer 311c in the recess of the resin layer 62, the conductive layer 311c can be easily exposed. Further, since the insulating layer 63 and / or the resin layer 62b can remain even after the conductive layer 311c is exposed, contamination of the transistor can be reduced.

The thickness of the resin layer 62a remaining on the manufacturing substrate 61 side can be set to, for example, 100 nm or less, specifically, about 40 nm to 70 nm. By removing the resin layer 62a, the manufacturing substrate 61 can be reused. For example, when glass is used for the manufacturing substrate 61 and polyimide resin is used for the resin layer 62, the resin layer 62a can be removed using fuming nitric acid. Further, the resin layer 62 may be formed again on the resin layer 62a remaining on the manufacturing substrate 61 by using a material having photosensitivity and thermosetting property.

For example, the manufacturing substrate 61 can be peeled by applying a pulling force to the resin layer 62 in the vertical direction. Specifically, the manufacturing substrate 61 can be peeled off by sucking a part of the upper surface of the substrate 351 and pulling it upward. At this time, it is preferable to form a separation starting point by inserting a sharp tool such as a blade between the manufacturing substrate 61 and the insulating layer 63.

In this embodiment mode, since the conductive layer 311c is not exposed at the time of separation from the manufacturing substrate 61, in the configuration in which the remaining insulating layer 63 and the resin layer 62b remain, each of the resin layer 62b and the insulating layer 63 is further provided. Part of the conductive layer 311c is exposed by removing a part thereof. (FIG. 10B).

The method for removing the resin layer 62 is not particularly limited. For example, a wet etching method, a dry etching method, or the like can be used, but it is preferable to remove by ashing using oxygen plasma. Ashing has advantages such as high controllability, good in-plane uniformity, and suitable for processing using a large substrate. The insulating layer 63 can be removed using, for example, a dry etching method.

Next, an alignment film 133a is formed on the exposed surface of the electrode 311a (FIG. 11). The alignment film 133a can be formed by performing a rubbing process after forming a thin film of resin or the like. In this embodiment, the alignment film is formed separately. However, the remaining resin layer 62b may be rubbed to be used as the alignment film.

Then, the substrate 351 formed up to the alignment film 133a and the substrate 361 after the steps up to FIG. 7A are bonded with the adhesive layer 141 with the liquid crystal 112 interposed therebetween (FIG. 11). A material that can be used for the adhesive layer 142 can be used for the adhesive layer 141.

A liquid crystal element 180 illustrated in FIG. 11 has a structure in which an electrode 311a (and an electrode 311b) partly functioning as a pixel electrode, a liquid crystal 112, and an electrode 113 partly functioning as a common electrode are stacked. The liquid crystal element 180 is manufactured so as to overlap with the colored layer 131.

Through the above steps, the display device 300 can be manufactured.

12 to 16 are diagrams showing different configurations of the display device 300. FIG. 12 to 16 are substantially the same as FIGS. 7 to 11, but the shape of the insulating layer 63 is different because the method of forming the recesses of the insulating layer 62 is different. As a manufacturing method, after the resin layer 62 is formed, the insulating layer 63 is formed before the recess is formed (FIG. 12B). Then, the insulating layer 63 and the resin layer 62 are continuously etched to form a recess (FIG. 12C). The etching may be finished with the resin layer 62 left after the insulating layer 63 is opened. Thereby, the resin layer 62 having a recess can be formed. The etching may be performed by dry etching. In this case, the resin layer 62 can be formed of a material having no photosensitivity.

Further, as shown in FIG. 17A, all of the resin layer 62 may be removed. In this case, since the conductive layer 311c protrudes, it is preferable to provide the connection layer 242 so as to have an anchor effect. Thereby, the adhesiveness of the connection layer 242 and the conductive layer 311c can be improved (FIG. 18). Note that a structure in which the conductive layer 311c protrudes while leaving the resin layer 62 may be employed.

19 to 23 are diagrams showing different configurations of the display device 300. FIG. 19 to 23 are almost the same as FIGS. 7 to 11 except that the insulating layer 63 is not formed. As a manufacturing method, after forming the resin layer 62, a recess is formed without forming the insulating layer 63 (FIGS. 19B and 19C), and the electrode 311a and the conductive layer 311c are formed (FIG. 19 ( D)). After separating the manufacturing substrate 61, the conductive layer 311c is exposed by removing the resin layer 62b. Due to the absence of the insulating layer 63, it is possible to save time and labor for film formation and removal.

As described above, a display device that can be easily manufactured according to this embodiment includes two types of display elements and can be used by switching between a plurality of display modes. Regardless of this, a display device with high visibility and high convenience can be obtained.

This embodiment can be combined with any of the other embodiments as appropriate. In this specification, in the case where a plurality of structure examples are given in one embodiment, any of the structure examples can be combined as appropriate.

(Embodiment 2)
In this embodiment, a display device that can be manufactured according to one embodiment of the present invention will be described with reference to FIGS.

FIG. 24 shows a block diagram of the display device 10. The display device 10 includes a display unit 14.

The display unit 14 includes a plurality of pixel units 30 arranged in a matrix. The pixel unit 30 includes a first pixel 31p and a second pixel 32p.

FIG. 24 shows an example in which the first pixel 31p and the second pixel 32p each have a display element corresponding to three colors of red (R), green (G), and blue (B).

Each of the display elements included in the first pixel 31p is a display element that utilizes reflection of external light. The first pixel 31p includes a first display element 31R corresponding to red (R), a first display element 31G corresponding to green (G), and a first display element 31B corresponding to blue (B). .

Each of the display elements included in the second pixel 32p is a light emitting element. The second pixel 32p includes a second display element 32R corresponding to red (R), a second display element 32G corresponding to green (G), and a second display element 32B corresponding to blue (B). .

FIGS. 25A to 25C are schematic diagrams illustrating a configuration example of the pixel unit 30. FIG.

The first pixel 31p includes a first display element 31R, a first display element 31G, and a first display element 31B. The first display element 31R reflects external light and emits red light Rr to the display surface side. Similarly, the first display element 31G and the first display element 31B respectively emit green light Gr or blue light Br to the display surface side.

The second pixel 32p includes a second display element 32R, a second display element 32G, and a second display element 32B. The second display element 32R emits red light Rt to the display surface side. Similarly, the second display element 32G and the second display element 32B each emit green light Gt or blue light Bt to the display surface side.

FIG. 25A corresponds to a mode (third mode) in which display is performed by driving both the first pixel 31p and the second pixel 32p. The pixel unit 30 can emit light 35tr of a predetermined color to the display surface side using reflected light (light Rr, light Gr, light Br) and transmitted light (light Rt, light Gt, light Bt). it can.

FIG. 25B corresponds to a mode (first mode) in which display is performed using reflected light by driving only the first pixel 31p. The pixel unit 30 uses only light (light Rr, light Gr, and light Br) from the first pixel 31p without driving the second pixel 32p, for example, when external light is sufficiently strong. The light 35r can be emitted to the display surface side. Thereby, driving with extremely low power consumption can be performed.

FIG. 25C corresponds to a mode (second mode) in which display is performed using light emission (transmitted light) by driving only the second pixels 32p. The pixel unit 30 uses only light (light Rt, light Gt, and light Bt) from the second pixel 32p without driving the first pixel 31p, for example, when the external light is extremely weak. Light 35t can be emitted to the display surface side. Thereby, a vivid display can be performed. Further, by reducing the luminance when the surroundings are dark, it is possible to suppress glare that the user feels and to reduce power consumption.

The color and the number of display elements included in the first pixel 31p and the second pixel 32p are not limited.

26A to 26C and FIGS. 27A to 27C show configuration examples of the pixel unit 30, respectively. Here, a schematic diagram corresponding to a mode (third mode) in which display is performed by driving both the first pixel 31p and the second pixel 32p is shown. Display can also be performed in a mode in which only the first pixel 31p or the second pixel 32p is driven (first mode and second mode).

In addition to the second display element 32R, the second display element 32G, and the second display element 32B, the second pixel 32p illustrated in FIGS. A second display element 32W exhibiting W).

The second pixel 32p shown in FIGS. 26B and 27C exhibits yellow (Y) in addition to the second display element 32R, the second display element 32G, and the second display element 32B. A second display element 32Y is included.

The configurations illustrated in FIGS. 26A to 26C, FIGS. 27A and 27B, the second pixel is compared with the configuration without the second display element 32W and the second display element 32Y. The power consumption in the display mode (second mode and third mode) using 32p can be reduced.

The first pixel 31p illustrated in FIG. 26C includes a first display element 31W that exhibits white (W) in addition to the first display element 31R, the first display element 31G, and the first display element 31B. Have

The structure illustrated in FIG. 26C reduces power consumption in the display mode (the first mode and the third mode) using the first pixel 31p as compared to the structure illustrated in FIG. Can do.

The first pixel 31p shown in FIGS. 27A to 27C includes only the first display element 31W that exhibits white. At this time, in the display mode (first mode) using only the first pixel 31p, black-and-white display or grayscale display can be performed, and the display mode using the second pixel 32p (second mode). In the mode and the third mode, color display can be performed.

With such a configuration, since the aperture ratio of the first pixel 31p can be increased, the reflectance of the first pixel 31p can be improved and brighter display can be performed.

The first mode is suitable for displaying information that does not require color display, such as document information.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
In this embodiment, a more specific structure example of the display device described in Embodiment 1 will be described with reference to FIGS.

FIG. 28A is a block diagram of the display device 400. The display device 400 includes a display unit 362, a circuit GD, and a circuit SD. The display portion 362 includes a plurality of pixels 410 arranged in a matrix.

The display device 400 includes a plurality of wirings G1, a plurality of wirings G2, a plurality of wirings ANO, a plurality of wirings CSCOM, a plurality of wirings S1, and a plurality of wirings S2. The plurality of wirings G1, the plurality of wirings G2, the plurality of wirings ANO, and the plurality of wirings CSCOM are electrically connected to the plurality of pixels 410 and the circuit GD arranged in the direction indicated by the arrow R, respectively. The plurality of wirings S1 and the plurality of wirings S2 are electrically connected to the plurality of pixels 410 and the circuit SD arranged in the direction indicated by the arrow C, respectively.

Note that, here, for the sake of simplicity, a configuration including one circuit GD and one circuit SD is shown; however, the circuit GD and the circuit SD that drive the liquid crystal element and the circuit GD and the circuit SD that drive the light emitting element are separately provided. May be provided.

The pixel 410 includes a reflective liquid crystal element and a light-emitting element.

28B1 to 28B4 illustrate structural examples of the electrode 311 included in the pixel 410. FIG. The electrode 311 functions as a reflective electrode of the liquid crystal element. An opening 451 is provided in the electrode 311 in FIGS. 28B1 and 28B2.

In FIGS. 28B1 and 28B2, the light-emitting element 360 located in a region overlapping with the electrode 311 is indicated by a broken line. The light emitting element 360 is disposed so as to overlap with the opening 451 included in the electrode 311. Thereby, the light emitted from the light emitting element 360 is emitted to the display surface side through the opening 451.

In FIG. 28 (B1), the pixels 410 adjacent in the direction indicated by the arrow R are pixels corresponding to different colors. At this time, as shown in FIG. 28B1, in two pixels adjacent to each other in the direction indicated by the arrow R, it is preferable that the openings 451 are provided at different positions so as not to be arranged in a line. Accordingly, the two light-emitting elements 360 can be separated from each other, and a phenomenon (also referred to as crosstalk) in which light emitted from the light-emitting elements 360 enters the colored layer of the adjacent pixel 410 can be suppressed. In addition, since the two adjacent light emitting elements 360 can be arranged apart from each other, a display device with high definition can be realized even when the EL layer of the light emitting element 360 is separately formed using a shielding mask or the like.

In FIG. 28 (B2), adjacent pixels 410 in the direction indicated by arrow C are pixels corresponding to different colors. Similarly in FIG. 28 (B2), it is preferable that openings 451 are provided at different positions in the electrode 311 so that the two pixels adjacent in the direction indicated by the arrow C are not arranged in a line.

The smaller the value of the ratio of the total area of the openings 451 to the total area of the non-openings, the brighter the display using the liquid crystal element. In addition, as the value of the ratio of the total area of the openings 451 to the total area of the non-openings is larger, the display using the light emitting element 360 can be brightened.

The shape of the opening 451 can be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. Moreover, it is good also as an elongated streak shape, a slit shape, and a checkered shape. Further, the opening 451 may be arranged close to adjacent pixels. Preferably, the opening 451 is arranged close to other pixels displaying the same color. Thereby, crosstalk can be suppressed.

28B3 and 28B, the light-emitting region of the light-emitting element 360 may be located in a portion where the electrode 311 is not provided. Thereby, the light emitted from the light emitting element 360 is emitted to the display surface side.

In FIG. 28 (B3), the light emitting elements 360 are not arranged in a line in the two pixels 410 adjacent in the direction indicated by the arrow R. In FIG. 28 (B4), the light emitting elements 360 are arranged in a line in two pixels adjacent to each other in the direction indicated by the arrow R.

Various sequential circuits such as a shift register can be used for the circuit GD. A transistor, a capacitor, or the like can be used for the circuit GD. A transistor included in the circuit GD can be formed in the same process as the transistor included in the pixel 410.

The circuit SD is electrically connected to the wiring S1. For the circuit SD, for example, an integrated circuit can be used. Specifically, an integrated circuit formed on a silicon substrate can be used for the circuit SD.

For example, the circuit SD can be mounted on a pad electrically connected to the pixel 410 by using a COG (Chip on glass) method, a COF method, or the like. Specifically, an integrated circuit can be mounted on the pad using an anisotropic conductive film.

FIG. 29 is an example of a circuit diagram of the pixel 410. In FIG. 29, two adjacent pixels 410 are shown.

The pixel 410 includes a switch SW1, a capacitor C1, a liquid crystal element 340, a switch SW2, a transistor M, a capacitor C2, a light emitting element 360, and the like. In addition, a wiring G1, a wiring G2, a wiring ANO, a wiring CSCOM, a wiring S1, and a wiring S2 are electrically connected to the pixel 410. In FIG. 29, a wiring VCOM1 electrically connected to the liquid crystal element 340 and a wiring VCOM2 electrically connected to the light emitting element 360 are illustrated.

FIG. 29 shows an example in which transistors are used for the switch SW1 and the switch SW2.

The gate of the switch SW1 is connected to the wiring G1. One of the source and the drain of the switch SW1 is connected to the wiring S1, and the other is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element 340. The other electrode of the capacitive element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

The gate of the switch SW2 is connected to the wiring G2. One of the source and the drain of the switch SW2 is connected to the wiring S2, and the other is connected to one electrode of the capacitor C2 and the gate of the transistor M. The other electrode of the capacitor C2 is connected to one of the source and the drain of the transistor M and the wiring ANO. The other of the source and the drain of the transistor M is connected to one electrode of the light emitting element 360. The other electrode of the light emitting element 360 is connected to the wiring VCOM2.

FIG. 29 shows an example in which the transistor M has two gates sandwiching a semiconductor and these are connected. As a result, the current that can be passed by the transistor M can be increased.

A signal for controlling the switch SW1 to be in a conductive state or a non-conductive state can be supplied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal included in the liquid crystal element 340 can be supplied to the wiring S1. A predetermined potential can be applied to the wiring CSCOM.

A signal for controlling the switch SW2 to be in a conductive state or a non-conductive state can be supplied to the wiring G2. The wiring VCOM2 and the wiring ANO can each be supplied with a potential at which a potential difference generated by the light emitting element 360 emits light. A signal for controlling the conduction state of the transistor M can be supplied to the wiring S2.

For example, in the case of performing reflection mode display, the pixel 410 illustrated in FIG. 29 is driven by a signal supplied to the wiring G1 and the wiring S1, and can display using optical modulation by the liquid crystal element 340. In the case where display is performed in the transmissive mode, display can be performed by driving the light-emitting element 360 by driving with signals supplied to the wiring G2 and the wiring S2. In the case of driving in both modes, the driving can be performed by signals given to the wiring G1, the wiring G2, the wiring S1, and the wiring S2.

Note that although FIG. 29 illustrates an example in which one pixel 410 includes one liquid crystal element 340 and one light emitting element 360, the present invention is not limited thereto. FIG. 30A illustrates an example in which one pixel 410 includes one liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, and 360w). A pixel 410 illustrated in FIG. 30A can display full color using a light-emitting element in one pixel, unlike FIG.

In FIG. 30A, in addition to the example of FIG. 29, a wiring G3 and a wiring S3 are connected to the pixel 410.

In the example illustrated in FIG. 30A, for example, light emitting elements that exhibit red (R), green (G), blue (B), and white (W) can be used for the four light emitting elements 360, respectively. As the liquid crystal element 340, a reflective liquid crystal element exhibiting white can be used. Thereby, when displaying in reflection mode, white display with high reflectance can be performed. In addition, when display is performed in the transmissive mode, display with high color rendering properties can be performed with low power.

FIG. 30B illustrates a configuration example of the pixel 410 corresponding to FIG. The pixel 410 includes a light-emitting element 360 w that overlaps with an opening included in the electrode 311, and a light-emitting element 360 r, a light-emitting element 360 g, and a light-emitting element 360 b that are disposed around the electrode 311. The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b preferably have substantially the same light emitting area.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, a structure of a CAC (Cloud-Aligned Composite) -OS that can be used for the transistor disclosed in one embodiment of the present invention will be described.

The CAC-OS is one structure of a material in which an element included in an oxide semiconductor is unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. Note that in the following, in an oxide semiconductor, one or more metal elements are unevenly distributed, and a region including the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. The state mixed with is also referred to as a mosaic or patch.

Note that the oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter Also referred to as a cloud-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite oxide semiconductor having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and may refer to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

On the other hand, CAC-OS relates to a material structure of an oxide semiconductor. CAC-OS refers to a region observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn and O, and nanoparticles mainly composed of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

In place of gallium, aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium are selected. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

The CAC-OS is characterized in that no clear peak is observed when it is measured using a θ / 2θ scan by the out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and each region is mainly composed of each element. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.

On the other hand, areas such as _{GaO X3} is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, a region containing GaO _X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment, a display module and an electronic device of one embodiment of the present invention will be described.

A display module 8000 illustrated in FIG. 31 includes a touch panel 8004 connected to the FPC 8003, a display panel 8006 connected to the FPC 8005, a frame 8009, a printed board 8010, and a battery 8011 between an upper cover 8001 and a lower cover 8002. .

The display device of one embodiment of the present invention can be used for the display panel 8006, for example. Accordingly, a display module with high visibility can be manufactured regardless of the surrounding brightness. In addition, a display module with low power consumption can be manufactured. In addition, a display module with a wide viewing angle can be manufactured.

The shapes and dimensions of the upper cover 8001 and the lower cover 8002 can be changed as appropriate in accordance with the sizes of the touch panel 8004 and the display panel 8006.

As the touch panel 8004, a resistive film type or capacitive type touch panel can be used by being overlapped with the display panel 8006. Alternatively, the touch panel 8004 may be omitted, and the display panel 8006 may have a touch panel function.

The frame 8009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed board 8010 in addition to a protective function of the display panel 8006. The frame 8009 may have a function as a heat sink.

The printed board 8010 includes a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal. As a power supply for supplying power to the power supply circuit, an external commercial power supply may be used, or a power supply using a battery 8011 provided separately may be used. The battery 8011 can be omitted when a commercial power source is used.

The display module 8000 may be additionally provided with a member such as a polarizing plate, a retardation plate, or a prism sheet.

The display device of one embodiment of the present invention can achieve high visibility regardless of the intensity of external light. Therefore, it can be suitably used for a portable electronic device, a wearable electronic device (wearable device), an electronic book terminal, and the like.

A portable information terminal 800 illustrated in FIGS. 32A and 32B includes a housing 801, a housing 802, a display portion 803, a display portion 804, a hinge portion 805, and the like.

The housing 801 and the housing 802 are connected by a hinge portion 805. The portable information terminal 800 can be developed from the folded state (FIG. 32A) as shown in FIG.

The display device of one embodiment of the present invention can be used for at least one of the display portion 803 and the display portion 804. Accordingly, a highly visible portable information terminal can be manufactured regardless of the surrounding brightness. In addition, a portable information terminal with low power consumption can be manufactured. In addition, a portable information terminal with a wide viewing angle can be manufactured.

Each of the display unit 803 and the display unit 804 can display at least one of document information, a still image, a moving image, and the like. When displaying document information on the display unit, the portable information terminal 800 can be used as an electronic book terminal.

Since the portable information terminal 800 can be folded, it has high portability and excellent versatility.

The housing 801 and the housing 802 may include a power button, an operation button, an external connection port, a speaker, a microphone, and the like.

A portable information terminal 810 illustrated in FIG. 32C includes a housing 811, a display portion 812, operation buttons 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, and the like.

The display device of one embodiment of the present invention can be used for the display portion 812. Accordingly, a highly visible portable information terminal can be manufactured regardless of the surrounding brightness. In addition, a portable information terminal with low power consumption can be manufactured. In addition, a portable information terminal with a wide viewing angle can be manufactured.

The portable information terminal 810 includes a touch sensor in the display unit 812. Any operation such as making a call or inputting characters can be performed by touching the display portion 812 with a finger or a stylus.

In addition, by operating the operation button 813, the power can be turned on and off, and the type of image displayed on the display portion 812 can be switched. For example, the mail creation screen can be switched to the main menu screen.

Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the portable information terminal 810, the orientation (portrait or landscape) of the portable information terminal 810 is determined, and the screen display orientation of the display unit 812 is changed. It can be switched automatically. The screen display orientation can also be switched by touching the display portion 812, operating the operation buttons 813, or inputting voice using the microphone 816.

The portable information terminal 810 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, or the like. Specifically, it can be used as a smartphone. The portable information terminal 810 can execute various applications such as mobile phone, electronic mail, text browsing and creation, music playback, video playback, Internet communication, and games.

A camera 820 illustrated in FIG. 32D includes a housing 821, a display portion 822, operation buttons 823, a shutter button 824, and the like. A removable lens 826 is attached to the camera 820.

The display device of one embodiment of the present invention can be used for the display portion 822. The convenience of the camera can be enhanced by having a display portion with high visibility regardless of ambient brightness. In addition, a camera with low power consumption can be manufactured. In addition, a camera with a wide viewing angle can be manufactured.

Here, the camera 820 is configured such that the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing 821 may be integrated.

The camera 820 can capture a still image or a moving image by pressing the shutter button 824. In addition, the display portion 822 has a function as a touch panel and can capture an image by touching the display portion 822.

The camera 820 can be separately attached with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 821.

33A to 33E are diagrams illustrating electronic devices. These electronic devices include a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), a connection terminal 9006, and a sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, Includes functions to measure rotation speed, distance, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared ), A microphone 9008 and the like.

The display device of one embodiment of the present invention can be favorably used for the display portion 9001. Accordingly, an electronic device having a display portion with high visibility can be manufactured regardless of ambient brightness. In addition, an electronic device with low power consumption can be manufactured. In addition, an electronic device with a wide viewing angle can be manufactured.

The electronic devices illustrated in FIGS. 33A to 33E can have various functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for controlling processing by various software (programs), Wireless communication function, function for connecting to various computer networks using the wireless communication function, function for transmitting or receiving various data using the wireless communication function, and reading and displaying the program or data recorded on the recording medium It can have a function of displaying on the section. Note that the functions of the electronic devices illustrated in FIGS. 33A to 33E are not limited to these, and may have other functions.

FIG. 33A is a perspective view showing a wristwatch-type portable information terminal 9200, and FIG. 33B is a perspective view showing a wristwatch-type portable information terminal 9201.

A portable information terminal 9200 illustrated in FIG. 33A can execute various applications such as a mobile phone, electronic mail, text browsing and creation, music playback, Internet communication, and computer games. Further, the display portion 9001 is provided with a curved display surface, and can perform display along the curved display surface. In addition, the portable information terminal 9200 can execute short-range wireless communication with a communication standard. For example, it is possible to talk hands-free by communicating with a headset capable of wireless communication. In addition, the portable information terminal 9200 includes a connection terminal 9006 and can directly exchange data with other information terminals via a connector. Charging can also be performed through the connection terminal 9006. Note that the charging operation may be performed by wireless power feeding without using the connection terminal 9006.

A mobile information terminal 9201 illustrated in FIG. 33B is different from the mobile information terminal illustrated in FIG. 33A in that the display surface of the display portion 9001 is not curved. In addition, the external shape of the display portion of the portable information terminal 9201 is a non-rectangular shape (a circular shape in FIG. 33B).

33C to 33E are perspective views showing a foldable portable information terminal 9202. FIG. Note that FIG. 33C is a perspective view of a state in which the portable information terminal 9202 is expanded, and FIG. 33D is a state in which the portable information terminal 9202 is expanded or changed from one of the folded state to the other. FIG. 33E is a perspective view of the portable information terminal 9202 folded.

The portable information terminal 9202 is excellent in portability in the folded state, and in the expanded state, the portable information terminal 9202 is excellent in display listability due to a seamless wide display area. A display portion 9001 included in the portable information terminal 9202 is supported by three housings 9000 connected by a hinge 9055. By bending between the two housings 9000 via the hinge 9055, the portable information terminal 9202 can be reversibly deformed from the expanded state to the folded state. For example, the portable information terminal 9202 can be bent with a curvature radius of 1 mm to 150 mm.

This embodiment can be combined with any of the other embodiments as appropriate.

ANO wiring C1 capacitive element C2 capacitive element CSCOM wiring G1 wiring G2 wiring G3 wiring GD circuit S1 wiring S2 wiring S3 wiring SD circuit SW1 switch SW2 switch VCOM1 wiring VCOM2 wiring X1 distance X2 distance 10 display device 14 display unit 21 light emission 22 reflected light 30 Pixel unit 31B First display element 31G First display element 31p Pixel 31R First display element 31W First display element 32B Second display element 32G Second display element 32p Pixel 32R Second display element 32W First Second display element 32Y Second display element 35r Light 35t Light 35tr Light 41 Transistor 42 Transistor 61 Fabrication substrate 62 Resin layer 63 Insulating layer 100 Display device 110a Transistor 110b Transistor 110c Transistor 110d Transistor 110e To Transistor 110f Transistor 110g Transistor 110h Transistor 112 Liquid crystal 113 Electrode 117 Insulating layer 121 Insulating layer 131 Colored layer 132 Light shielding layer 133a Oriented film 133b Oriented film 134 Colored layer 135 Polarizing plate 141 Adhesive layer 142 Adhesive layer 151 Insulating layer 170 Light emitting element 180 Liquid crystal element 191 Electrode 192 EL layer 193 Electrode 194 Insulating layer 201 Transistor 203 Transistor 204 Connection part 205 Transistor 206 Transistor 207 Connection part 211 Insulating layer 212 Insulating layer 213 Insulating layer 214 Insulating layer 216 Insulating layer 218 Insulating layer 220 Insulating layer 221 Conductive Layer 221a Conductive layer 221b Conductive layer 222a Conductive layer 222b Conductive layer 223 Conductive layer 231 Semiconductor layer 235 Conductive layer 242 Connection layer 243 Connection body 252 Connection portion 26 1 Semiconductor layer 263a Conductive layer 263b Conductive layer 281 Transistor 284 Transistor 285 Transistor 286 Transistor 300 Display device 300A Display device 300B Display device 300C Display device 311 Electrode 311a Electrode 311b Electrode 311c Conductive layer 311d Conductive layer 311e Conductive layer 311f Conductive layer 340 Liquid crystal element 351 Substrate 360 Light-emitting element 360b Light-emitting element 360g Light-emitting element 360r Light-emitting element 360w Light-emitting element 361 Substrate 362 Display unit 364 Circuit 365 Wiring 372 FPC
373 IC
400 Display device 410 Pixel 451 Opening 800 Portable information terminal 801 Case 802 Case 803 Display unit 804 Display unit 805 Hinge unit 810 Portable information terminal 811 Case 812 Display unit 813 Operation button 814 External connection port 815 Speaker 816 Microphone 817 Camera 820 Camera 821 Housing 822 Display unit 823 Operation button 824 Shutter button 826 Lens 8000 Display module 8001 Upper cover 8002 Lower cover 8003 FPC
8004 Touch panel 8005 FPC
8006 Display panel 8009 Frame 8010 Printed circuit board 8011 Battery 9000 Housing 9001 Display unit 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hinge 9200 Portable information terminal 9201 Portable information terminal 9202 Portable information terminal

Claims (14)

A method for manufacturing a display device having a first display element, a second display element, a first insulating layer, and a conductive layer,
The first display element includes a first pixel electrode having a function of reflecting visible light, a liquid crystal, and a first common electrode having a function of transmitting visible light.
The second display element includes a second pixel electrode having a function of transmitting visible light, a light emitting layer, and a second common electrode having a function of reflecting visible light,
Forming the first common electrode on a first substrate;
A resin layer having a first region having a thickness of 0.1 μm or more and 3 μm or less and a second region having a thickness smaller than that of the first region is formed over a manufacturing substrate using a thermosetting material. Forming the step,
Forming the first pixel electrode on the resin layer;
Forming the conductive layer so as to cover the second region simultaneously with the step of forming the first pixel electrode;
Forming the first insulating layer on the first pixel electrode;
Forming the second display element by forming the second pixel electrode, the light emitting layer, and the second common electrode in this order on the insulating layer;
Bonding the production substrate and the second substrate using an adhesive;
Irradiating the resin layer with laser light;
Separating the fabrication substrate and the first pixel electrode;
The liquid crystal is disposed between the first common electrode and the first pixel electrode, and the first substrate and the second substrate are bonded to each other using an adhesive. A display device manufacturing method for forming the display element. In claim 1,
In the step of separating the manufacturing substrate and the first pixel electrode, separation is performed at an interface between the resin layer and the manufacturing substrate;
A method for manufacturing a display device, further comprising a step of exposing the conductive layer after the step of separating. In claim 1, in the step of separating the manufacturing substrate and the first pixel electrode, separation is performed between the manufacturing substrate, the pixel electrode, and the conductive layer in the resin layer.
A method for manufacturing a display device, further comprising a step of exposing the conductive layer after the step of separating. In Claim 1 thru / or Claim 3, after forming the 2nd field in the resin layer,
A manufacturing method of a display device further including a step of forming an insulating layer on the resin layer. In claim 1,
Forming an insulating layer on the resin layer after forming the second region in the resin layer;
In the step of separating the fabrication substrate and the first pixel electrode, the separation is performed inside the resin layer and at the interface between the resin layer and the insulating layer, and the conductive layer is exposed after the step of separating. The manufacturing method of the display apparatus further including the process to make. In claim 4 or claim 5,
A method for manufacturing a display device, wherein a material of the insulating layer is an inorganic insulating material. In claim 1,
The method for manufacturing a display device, wherein in the step of separating the manufacturing substrate and the first pixel electrode, the separation is performed inside the resin layer and at an interface between the resin layer and the conductive layer. In any one of Claims 2 thru | or 7,
A method for manufacturing a display device, including a step of connecting a wiring for inputting a signal or power to the exposed conductive layer through a connection layer. In any one of Claims 2 thru | or 7,
A method for manufacturing a display device, wherein the exposed conductive layer is connected to the first common electrode through a connection body. 10. The method for manufacturing a display device according to claim 1, wherein the resin layer is formed using a solution having a viscosity of 5 cP or more and less than 100 cP. The method for manufacturing a display device according to any one of claims 1 to 10, wherein the resin layer is formed using a solution having a viscosity of 10 cP or more and less than 50 cP. In any one of Claims 1 to 11,
A method for manufacturing a display device, in which the resin layer is formed using a spin coater. In any one of Claims 1 to 12,
A step of forming a transistor including an oxide semiconductor in a channel formation region between the step of forming the first pixel electrode and the step of forming the second pixel electrode;
A method for manufacturing a display device, in which the resin layer is heated in a step of forming the resin layer at a temperature higher than a temperature of heating in the step of forming the transistor. 14. The method for manufacturing a display device according to claim 1, wherein a material for forming the resin layer is a photosensitive material.

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