JP2018014792A - Connector coupling type gate parallel connection substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To equalize wiring lengths between a drive circuit and a plurality of semiconductor elements only by connection electrodes of adjacent connectors and correspond to increase/decrease of the number of semiconductor elements when the plurality of semiconductor elements are connected in parallel in the drive circuit.SOLUTION: A connector coupling type gate parallel connection substrate which has one end side connector 2, the other end side connector 3, an electrode 4 for gate connection and an electrode 5 for emitter connection provided on a substrate body 1, where one end side electrode 11 for forward wiring connection, one end side electrode 12 for backward wiring connection and one end side electrode 13 for output wiring connection of the one end side connector 2, and the other end side electrode 14 for forward wiring connection, the other end side electrode 15 for backward wiring connection and the other end side electrode 16 for output wiring connection of the other end side connector 3 are connected to each other by a forward connection wiring 17, a backward connection wiring 18 and an output wiring 19, the backward connection wiring 18 and the electrode 4 for gate connection are connected to each other by an element connection wiring 61, and the output wiring 19 and the electrode 5 for emitter connection are connected to each other by a connection wiring 71 for output.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a connector-connected gate parallel connection substrate for driving a plurality of semiconductor elements in parallel by a single drive circuit.

Conventionally, when a plurality of voltage-driven semiconductor elements such as IGBTs and MOSFET modules are driven in parallel by a single drive circuit, the drive circuit and the gate and emitter of each element are minimized in order to minimize the switching time deviation of each element. I tried to make the wiring length of as much as possible.
For this reason, it is necessary to balance the position of the drive circuit and the distance between the elements, and there are significant restrictions on the position where the drive circuit is disposed, which may hinder downsizing of the device.
Further, the wiring harness connecting the drive circuit, the gate and the emitter becomes long, and it is necessary to insulate the wiring harness from the outside, which increases the cost.

For example, in Patent Document 1 (Japanese Patent Laid-Open No. 9-261948), in a power converter for turning on / off each of a plurality of voltage-controlled semiconductor elements connected in parallel, an IGBT (11) to a drive circuit (13) Are disclosed in which the lengths of the stranded cable (31) of the path up to and the length of the stranded cable (32) of the path from the IGBT (12) to the drive circuit (13) are substantially equal (see FIG. 1 and (See paragraph 0012).
Further, in Patent Document 2 (Japanese Patent Laid-Open No. 2000-60148), in a switching module configured by using a plurality of switching elements (11) to (13) in parallel, (A) switching elements (11) to (13) ) Is a semiconductor element such as an IGBT, the terminals (14) and (17), the terminals (15) and (18), and the terminals (16) and (19) are respectively switching elements (11) and (12). And (13) a pair of collector and emitter terminals (see in particular FIG. 1 and paragraph 0011), (B) the first wiring conductor 35 and the second wiring conductor 36 are respectively connected to the terminal (14). ~ (16) and connection terminals (17) ~ (19) are connected in common, and the second wiring conductor (36) and the third wiring conductor (37) are connected by the folded portion (5), Terminal (41) -Terminal (14) -Terminal (17) -Folded part (5) -Terminal part (43) path, Terminal part (41) -Terminal (15) -Terminal (18) -Folded part (5 ) −Terminal part (43) The path and terminal part (41) -terminal (16) -terminal (19) -folded part (5) -terminal part (43) are described in such a way that they all have the same length. 1 and 2 and paragraphs 0012-0014).

However, in the power conversion device of Patent Document 1, the drive circuit (13) and the IGBTs (11) and (12) are separately connected by the stranded cables (31) and (32), and the terminal of the drive circuit (13) ( G), (E) and stranded cable (31), (32) need to be connected to each other, so the length of the stranded cable (31), (32) becomes longer. There is a problem that the arrangement of (11) and (12) is restricted.
Further, in the switching module of Patent Document 2, the first wiring conductor (35) is composed of the first and fifth flat conductor portions (351) and (352), and the second wiring conductor (36) and the third wiring conductor (36). Since the wiring conductor (37) is composed of the second and third flat plate conductor portions (371) and (372), there is a problem that it cannot cope with an increase in the number of switching elements.

Japanese Patent Laid-Open No. 9-261948 JP 2000-60148 A

The present invention solves such problems, and when a plurality of semiconductor elements are connected in parallel to one drive circuit, the wiring length between the drive circuit and each semiconductor element can be simply connected by connecting electrodes of adjacent connectors. It has been made as a first problem to be able to match the increase and decrease of the number of semiconductor elements.
Moreover, this invention is made | formed by making it easy to connect between the semiconductor elements connected in parallel as a 2nd subject.

The invention according to claim 1 is a connector-connected gate parallel connection substrate for driving a plurality of semiconductor elements in parallel with one drive circuit,
One end side electrode for outbound wiring connection and the other end side electrode for outbound wiring connection;
One end side electrode for return line connection and the other end side electrode for return line connection;
One end side electrode for output wiring connection and the other end side electrode for output wiring connection;
An element connection electrode;
An output wiring connection electrode;
Outbound connection wiring connecting the one end side electrode for outbound wiring connection and the other end side electrode for outbound wiring connection;
A return connection wiring for connecting the one end side electrode for the return path connection and the other end side electrode for the return path connection;
An output wiring for connecting the one end side electrode for output wiring connection and the other end side electrode for output wiring connection;
An element connection circuit portion for connecting the return connection wiring and the element connection electrode;
An output circuit portion for connecting the output wiring and the output wiring connecting electrode is provided.

The invention according to claim 2 is the connector-coupled gate parallel connection substrate according to claim 1,
The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
Whether the element connection circuit section and the output circuit section are element connection wiring that connects the return connection wiring and the gate connection electrode, and output connection wiring that connects the output wiring and the emitter connection electrode. And an emitter wiring for connecting the return connection wiring and the emitter connection electrode, and a gate wiring for connecting the output wiring and the gate connection electrode.

The invention according to claim 3 is the connector coupled gate parallel connection substrate according to claim 1,
The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
The element connection circuit unit and the output circuit unit are connected to the return circuit wiring and the gate connection electrode via a gate resistor, and to the output circuit for connecting the output wiring and the emitter connection electrode. It is a connection wiring, or an emitter wiring that connects the return connection wiring and the emitter connection electrode, and an output gate resistance circuit that connects the output wiring and the gate connection electrode via a gate resistance. It is characterized by.

The invention according to claim 4 is the connector coupled gate parallel connection substrate according to claim 1,
The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
The element connection circuit section and the output circuit section include a primary side coil connection circuit that connects the return path connection wiring and the gate connection electrode via a primary side coil of a common mode choke coil, and the output wiring and the emitter connection. A secondary-side coil connection circuit for connecting a connection electrode via a secondary-side coil of the common-mode choke coil, or connecting the return-connection wiring and the emitter-connection electrode to the primary-side coil of the common-mode choke coil A primary-side coil connection circuit for connecting via a secondary coil connection circuit and a secondary-side coil connection circuit for connecting the output wiring and the gate connection electrode via a secondary coil of the common mode choke coil. .

The invention according to claim 5 is the connector coupled gate parallel connection substrate according to claim 1,
The element connecting electrode is a collector connecting one end side electrode and a collector connecting other end side electrode,
The output wiring connection electrode is an emitter connection one end side electrode and an emitter connection other end side electrode,
A substrate-mounted semiconductor element, a collector terminal connection wiring for connecting the one end electrode for collector connection and the other end electrode for collector connection, and an emitter for connecting the one end electrode for emitter connection and the other end electrode for emitter connection Further provided with terminal connection wiring,
The element connection circuit unit is a gate collector connection circuit that connects the return connection wiring and the collector terminal connection wiring through a gate and a collector of the substrate-mounted semiconductor element,
The output circuit section is an emitter output wiring that connects the output wiring and the emitter terminal connection wiring, and an emitter connection wiring that connects the emitter of the substrate-mounted semiconductor element and the emitter terminal connection wiring. To do.

The invention according to claim 6 is the connector-coupled gate parallel connection substrate according to claim 1,
The element connection electrode is an emitter connection one end side electrode and an emitter connection other end side electrode,
The output wiring connection electrode is a collector connection one end side electrode and a collector connection other end side electrode,
A substrate-mounted semiconductor element, a collector terminal connection wiring for connecting the one end electrode for collector connection and the other end electrode for collector connection, and an emitter for connecting the one end electrode for emitter connection and the other end electrode for emitter connection Further provided with terminal connection wiring,
The element connection circuit section is an emitter connection wiring that connects the return path connection wiring and the emitter terminal connection wiring, and an emitter connection wiring that connects the emitter of the substrate-mounted semiconductor element and the emitter terminal connection wiring,
The output circuit section is a gate collector output connection circuit that connects the output wiring and the collector terminal connection wiring via a gate and a collector of the substrate-mounted semiconductor element.

The connector-connected gate parallel connection substrate (hereinafter referred to as “connection substrate”) of the invention according to claim 1 includes one end side electrode for forward wiring connection, the other end side electrode for forward wiring connection, and one end side electrode for return wiring connection. And the other end side electrode for return wiring connection, one end side electrode for output wiring connection and the other end side electrode for output wiring connection, an element connection electrode, and an output wiring connection electrode,
One end side electrode for outbound wiring connection and the other end side electrode for outbound wiring connection are connected by outbound connection wiring, one end side electrode for outbound wiring connection and the other end side electrode for inbound wiring connection are connected by inbound connection wiring, and output wiring The one end electrode for connection and the other end electrode for output wiring connection are connected by the output wiring, and the element connection circuit portion for connecting the return connection wiring and the element connection electrode, and the output wiring and the output wiring connection electrode Is provided.
Therefore, as shown in FIG. 2 or 6, the positive output terminal of the drive circuit and the one end side electrode for connecting the forward wiring of the connection board adjacent to the drive circuit and the negative output terminal of the drive circuit and the output of the connection board Connect one end electrode for wiring connection with connecting wires of the same length, and connect the other end electrode for forward wiring and the other end electrode for outgoing wiring connection, the other end side electrode for return wiring connection and the return wiring for adjacent connection boards. One end side electrode for connection and the other end side electrode for output wiring connection and one end side electrode for output wiring connection are connected to each other by the same length of connecting line, and the other end side electrode for connecting the forward wiring of the connection board farthest from the drive circuit A plurality of semiconductor elements can be easily connected in parallel by connecting the semiconductor element to the other end side electrode for connecting the return wiring with the short-circuit line.
In addition, for all semiconductor elements, the wiring length from the positive output terminal of the drive circuit to the negative output terminal of the drive circuit via the short circuit line of the connection substrate C and the semiconductor element may be the same length. it can.
In addition, since all of the connection substrates used for connecting a plurality of semiconductor elements in parallel may have the same structure, even if the required semiconductor elements are increased or decreased, it can be easily handled and the cost can be reduced.

  According to the invention according to claim 2, in addition to the effect of the connection substrate of the invention according to claim 1, the element connection circuit section and the output circuit section include an element connection wiring that connects the return connection wiring and the gate connection electrode, and It is an output connection wiring that connects the output wiring and the emitter connection electrode, or an emitter wiring that connects the return connection wiring and the emitter connection electrode, and a gate wiring that connects the output wiring and the gate connection electrode. For this reason, the connection board is composed of only eight electrodes and five wires, and the manufacturing cost of the connection board can be reduced.

According to the invention of claim 3, in addition to the effect of the connection substrate of the invention of claim 1, the element connection circuit section and the output circuit section connect the return connection wiring and the gate connection electrode via the gate resistance. A gate resistor circuit and an output connection line connecting the output line and the emitter connection electrode, or an emitter line and output line connecting the return connection line and the emitter connection electrode, and the gate and the gate connection electrode. This is an output gate resistor circuit connected through a resistor, and since there is an individual gate resistor near the gate of each semiconductor element, a resonance phenomenon between adjacent gates hardly occurs.
Therefore, the oscillation phenomenon of the semiconductor element can be suppressed.

  According to the invention of claim 4, in addition to the effect of the connection substrate of the invention of claim 1, the element connection circuit section and the output circuit section are configured to connect the return connection wiring and the gate connection electrode to the primary of the common mode choke coil. Primary side coil connection circuit connected via the side coil and the output wiring and the emitter connection electrode are connected to the secondary side coil connection circuit via the secondary side coil of the common mode choke coil, or the return connection wiring A primary side coil connection circuit for connecting the emitter connection electrode via the primary side coil of the common mode choke coil, and a secondary side for connecting the output wiring and the gate connection electrode via the secondary side coil of the common mode choke coil Because it is a side coil connection circuit, noise generated by driving the power converter without changing the connection mode between the connection board and the semiconductor element Flow can be prevented that the semiconductor device to malfunction by flowing in the driving wiring.

  According to the inventions according to claims 5 and 6, in addition to the effect of the connection substrate of the invention according to claim 1, a semiconductor element is mounted on the connection substrate itself, one end electrode for collector connection, the other end for collector connection Side electrode, one end electrode for emitter connection, the other end electrode for emitter connection, one end side electrode for collector connection and the other end side electrode for collector connection, and one end side electrode for emitter connection and emitter connection Since the emitter terminal connection wiring for connecting the other end side electrode is provided, as shown in FIG. 6, the drive circuit and the connection board adjacent thereto are connected, and the other end side for the forward wiring connection of the connection board located at the end. A plurality of semiconductor elements can be easily connected in parallel simply by short-circuiting the electrode and the other end side electrode for connecting the return wiring and connecting the five pairs of electrodes facing each other on the adjacent connection substrate.

FIG. 2 is a schematic view of a connector-coupled gate parallel connection substrate of Example 1; The circuit diagram at the time of connecting three semiconductor elements in parallel to one gate drive circuit board | substrate using the connector connection type gate parallel connection board | substrate of Example 1. FIG. Schematic of the connector connection type gate parallel connection board | substrate of Example 2, etc. FIG. FIG. 5 is a schematic view of a connector-coupled gate parallel connection substrate of Example 3; FIG. 6 is a schematic diagram of a connector-coupled gate parallel connection substrate of Example 4. The circuit diagram at the time of connecting three semiconductor elements in parallel to one gate drive circuit board | substrate using the connector connection type gate parallel connection board | substrate of Example 4. FIG. FIG. 6 is a schematic diagram of a connector-coupled gate parallel connection substrate and the like according to a modification of Example 1; Schematic of the connector connection type gate parallel connection board etc. concerning the modification of Example 2. FIG. FIG. 10 is a schematic view of a connector-coupled gate parallel connection substrate and the like according to a modification of Example 3; FIG. 10 is a schematic view of a connector-coupled gate parallel connection substrate according to a modification of Example 4; The example of the circuit diagram using the connection board which integrated two connection boards of Example 1. FIG.

Hereinafter, embodiments of the present invention will be described by way of examples.
For convenience, in this specification, the left side of the drawing is referred to as one end side, and the right side of the drawing is referred to as the other end side, but it does not necessarily mean the left side and right side of the substrate. It can be anywhere.

As shown in FIG. 1, the connector-coupled gate parallel connection substrate of the first embodiment (hereinafter referred to as “connection substrate of the first embodiment”, the same applies to the second embodiment) is provided on one end side of the substrate body 1. The one end side connector 2 is provided, and the other end side connector 3, the gate connection electrode 4 and the emitter connection electrode 5 are provided on the other end side of the substrate body 1.
Further, the one end side connector 2 has one end side electrode 11 for outgoing line connection, one end side electrode 12 for return line connection, and one end side electrode 13 for output line connection, and the other end side connector 3 has an outgoing line connection. The other end side electrode 14 for return wiring, the other end side electrode 15 for connecting return wiring, and the other end side electrode 16 for connecting output wiring are provided.
The forward wiring connection one end electrode 11 and the forward wiring connection other end electrode 14 are connected by the forward connection wiring 17, and the backward wiring connection one end electrode 12 and the backward wiring connection other end electrode 15 are connected backward. Connected by the wiring 18, the output wiring connecting one end side electrode 13 and the output wiring connecting other end side electrode 16 are connected by the output wiring 19, and the return path connecting wiring 18 and the gate connecting electrode 4 are connected by the element connection wiring 61. The output wiring 19 and the emitter connection electrode 5 are connected by an output connection wiring 71.
The semiconductor package 8 includes a semiconductor element 81 and a gate electrode 82, an auxiliary emitter electrode 83, a main emitter electrode 84, and a collector electrode 85.
The auxiliary emitter electrode 83 is for driving current and the main emitter electrode 84 is for flowing main current. However, in the case of a small current semiconductor package (rated current is approximately 75 A or less), the emitter electrode is divided into two. Some are not.

FIG. 2 is a diagram illustrating a circuit in which three semiconductor elements are connected in parallel to a gate drive circuit using the connection substrate of the first embodiment. The gate drive circuit substrate 25, three connection substrates A to C, and three semiconductors are illustrated. Elements A to C are used.
The gate drive circuit board 25 includes a gate drive circuit 21, a positive output terminal 22, a negative output terminal 23, and a gate resistor 24.

And the connection state of each board | substrate and semiconductor element AC is as follows (refer FIG.1 and FIG.2).
(1) The positive side output terminal 22 of the gate drive circuit board 25 and the one end side electrode 11 for connecting the forward wiring of the connection board A, and the negative side output terminal 23 and the one end side electrode 13 for connecting the output wiring have the same length. Connected by a line 26.
(2) Outward wiring connection other end electrode 14, forward wiring connection one end side electrode 11, return wiring connection other end side electrode 15 of adjacent connection boards (connection boards A and B and connection boards B and C) The return wiring connection one end side electrode 12, the output wiring connection other end side electrode 16, and the output wiring connection one end side electrode 13 are connected by a second connection line 27 having the same length.
(3) The forward wiring connection other end side electrode 14 and the return wiring connection other end side electrode 15 of the connection substrate C are connected by a short-circuit line 28 and are short-circuited.
(4) The gate electrode 82 of the semiconductor package 8 on which the semiconductor elements A to C are mounted is a conductive wire having the same length as the gate connection electrode 4 of the connection substrates A to C, direct screw tightening, soldering, press fitting, etc. Connected by.
(5) The auxiliary emitter electrode 83 of the semiconductor package 8 on which the semiconductor elements A to C are mounted is the same length as the emitter connection electrode 5 of the connection substrates A to C, directly screwed, soldered or press-fitted Etc. are connected.
(6) The main emitter electrode 84 of the semiconductor package 8 on which the semiconductor elements A to C are mounted is connected by a conducting wire.
(7) The collector electrode 85 of the semiconductor package 8 on which the semiconductor elements A to C are mounted is connected by a conducting wire.

Therefore, there are the following three paths from the positive output terminal 22 to the negative output terminal 23 via the semiconductor elements A to C.
(A) Positive output terminal 22-first connection line 26-outward connection wiring 17 of connection boards A to C and two second connection lines 27-short circuit 28- [return connection wiring 18 of connection board C-second Connection line 27-Return connection line 18 of connection board B-Second connection line 27-Return connection line 18 and element connection line 61 of connection board A-Semiconductor element A-Output connection line 71 and output line 19 of connection board A ] -First connection line 26-negative output terminal 23
(B) Positive side output terminal 22-first connection line 26-forward connection wiring 17 of connection boards A to C and two second connection lines 27-short circuit line 28-[return connection wiring 18 of connection board C-second Connection line 27-Return connection wiring 18 and element connection wiring 61 of connection board B-Semiconductor device B-Output connection wiring 71 and output wiring 19 of connection board B-Second connection line 27-Output wiring 19 of connection board A] First connection line 26 Negative output terminal 23
(C) Positive output terminal 22-first connection line 26-outward connection wiring 17 of connection boards A to C and two second connection lines 27-short-circuit line 28- [return connection wiring 18 of connection board C and element connection Wiring 61-Semiconductor element C-Output connection wiring 71 and output wiring 19 of connection board C-Second connection line 27-Output wiring 19 of connection board B-Second connection line 27-Output wiring 19 of connection board A]- First connection line 26-negative output terminal 23
In the paths (A) to (C), what is different is a portion surrounded by square brackets, but the two second connection lines 27 are common and the return connection wiring 18 of the connection boards A to C. In addition, the lengths of the element connection wiring 61, the output connection wiring 71, and the output wiring 19 are the same in any of the connection substrates, and the semiconductor elements A to C are connected to the connection substrates A to C in a similar manner. The difference is that the return connection wiring 18 of the connection board C and the return connection wiring 18 of the connection board B for the path (A), and the return connection wiring 18 of the connection board C and the output wiring of the connection board A for the path (B). 19, the path (C) is the output wiring 19 of the connection board B and the output wiring 19 of the connection board A.
However, since the lengths of the return connection wiring 18 and the output wiring 19 of each connection board are the same, the total length of the path (A), the total length of the path (B), and the total length of the path (C) are the same.

Accordingly, all the semiconductor elements A to C can have the same wiring length from the positive output terminal of the drive circuit to the negative output terminal of the drive circuit via the semiconductor element.
Further, the lengths of the three second connection lines 27 connecting the adjacent connection substrates are the same, and the lengths of the conductive lines connecting the gate electrode 82 and the gate connection electrode 4 are the same, and the auxiliary emitter electrode 83 and the emitter connection If the lengths of the conductive wires connecting the electrodes 5 are the same, the number of connection substrates and semiconductor elements is not limited to three, and the same relationship as described above can be established with two or four or more.
Note that the lengths of the two first connection lines 26 do not have to be the same.

FIG. 3 shows the connection board of the second embodiment.
The only difference from the connection substrate of the first embodiment is that the return connection wiring 18 and the gate connection electrode 4 are connected via a gate resistor 20 and the element connection wiring 61 is a gate resistance circuit 62.
According to the connection substrate of the second embodiment, it is not necessary to provide the gate drive circuit substrate 25 with the gate resistor 24 as shown in FIG. 2, and when using a drive circuit without the gate resistor, the gate connection circuit is used. There is no need to connect a gate resistor between the electrode 4 and the gate electrode 82.

FIG. 4 shows a connection board of the third embodiment.
The difference from the connection substrate of the first embodiment is that the return connection wiring 18 and the gate connection electrode 4 are connected via the primary side coil of the common mode choke coil, and the element connection wiring 61 is connected to the primary side coil connection circuit 63. The output wiring and the emitter connection electrode are connected via the secondary side coil of the common mode choke coil, and the output connection wiring 71 is used as the secondary side coil connection circuit 73.
And according to the connection board of Example 3, a semiconductor element malfunctions because the noise current generated by the drive of the power converter flows in the drive wiring without changing the connection mode between the connection board and the semiconductor package 8. Can be suppressed.

FIG. 5 shows the connection board of the fourth embodiment.
In the connection substrate of Example 4, the semiconductor element 86 is mounted on the substrate body 1, and instead of the gate connection electrode 4, one end electrode 41 for collector connection, the other end electrode 42 for collector connection, and one end electrode for collector connection. 41 and a collector terminal connection wiring 43 for connecting the other end electrode 42 for collector connection are provided, and instead of the emitter connection electrode 5, one end electrode 51 for emitter connection, the other end electrode 52 for emitter connection, and an emitter An emitter terminal connection wiring 53 is provided for connecting the one end electrode 51 for connection and the other end electrode 52 for emitter connection.
The return connection wiring 18 and the collector terminal connection wiring 43 are connected by a gate collector connection circuit 64 connected via the gate and collector of the semiconductor element 86, and the output wiring 19 and the emitter terminal connection wiring 53 are used for emitter output. The emitter of the semiconductor element 86 and the emitter terminal connection wiring 53 are connected by an emitter connection wiring 75.

FIG. 6 is a diagram showing a circuit in which three semiconductor elements are connected in parallel to a gate driving circuit using the connection substrate of Example 4 (hereinafter, referred to as “element substrate” to be distinguished from the connection substrate of Example 1). The gate drive circuit substrate 25 and the three element substrates A to C are used.
The gate drive circuit board 25 includes a gate drive circuit 21, a positive output terminal 22, a negative output terminal 23, and a gate resistor 24, as in FIG.

The connection state of the gate drive circuit substrate 25 and the three element substrates A to C is as follows (see FIGS. 5 and 6).
(1) The positive output terminal 22 of the gate drive circuit board 25 and the one end side electrode 11 for connecting the forward wiring of the element substrate A, and the negative output terminal 23 and the one end side electrode 13 for connecting the output wiring have the same length. Connected by a line 26.
(2) Outward wiring connection other end electrode 14 of the adjacent element substrates (element substrates A and B and element substrates B and C), one end electrode 11 for forward wiring connection, and the other end electrode 15 for return wiring connection The return wiring connection one end side electrode 12, the output wiring connection other end side electrode 16, and the output wiring connection one end side electrode 13 are connected by a second connection line 27 having the same length.
(3) The other end side electrode 14 for connecting the forward wiring of the element substrate C and the other end side electrode 15 for connecting the backward wiring are connected by the short-circuit line 28 and are short-circuited.
(4) The collector connection other end side electrode 42 and the collector connection one end side electrode 41 of adjacent element substrates (element substrates A and B and element substrates B and C) are connected by a conductive wire.
(5) The emitter connection other end side electrode 52 and the emitter connection one end side electrode 51 of adjacent element substrates (element substrates A and B and element substrates B and C) are connected by a conductive wire.

Also in FIG. 6, since the relationship of the path from the positive output terminal 22 to the negative output terminal 23 via the semiconductor elements A to C is the same as that in FIG. 2, the drive circuit for all of the semiconductor elements A to C is provided. The wiring length from the positive output terminal 22 to the negative output terminal 23 of the drive circuit via the semiconductor element can be made the same.
Further, the number of element substrates and semiconductor elements is not limited to three, but may be two or four or more as in the case of FIG.
Then, according to the element substrate of Example 4, the drive circuit and the element substrate A are connected, the other end side electrode 14 for the forward wiring connection and the other end side electrode 15 for the return path connection of the element substrate C are short-circuited. A plurality of semiconductor elements can be easily connected in parallel simply by connecting the opposing five pairs of electrodes of the element substrates (element substrates A and B and element substrates B and C) with the second connection lines 27 and the conductive wires. it can.

The modification of an Example is listed.
(1) FIG. 7 is a view showing a modification of the connection board of the first embodiment.
The difference from the first embodiment is that the positions of the gate connection electrode 4 and the emitter connection electrode 5 are reversed.
The auxiliary emitter electrode 83 of the semiconductor package 8 is connected to the return connection wiring 18 via the emitter connection electrode 5 and the emitter wiring 66, and the gate electrode 82 of the semiconductor package 8 is connected to the gate connection electrode 4 and the gate wiring. The output wiring 19 is connected via the wiring 72.
The drive circuit and the plurality of connection substrates are connected in the same manner as in FIG. 2, but the positive side of the gate drive circuit substrate 25 is an emitter output and the negative side is a gate output, and the gate resistor 24 is inserted on the negative side. The

(2) FIG. 8 is a view showing a modification of the connection board of the second embodiment.
The difference from the second embodiment is that the positions of the gate connection electrode 4 and the emitter connection electrode 5 are reversed, and the return connection wiring 18 and the emitter connection electrode 5 are connected by the emitter wiring 66 and output. The wiring 19 and the gate connection electrode 4 are connected by an output gate resistance circuit 76 having a gate resistance 20.
The auxiliary emitter electrode 83 of the semiconductor package 8 is connected to the return connection wiring 18 via the emitter connection electrode 5 and the emitter wiring 66, and the gate electrode 82 of the semiconductor package 8 is connected to the gate connection electrode 4 and the output wiring. It is connected to the output wiring 19 through the gate resistance circuit 76.
The drive circuit and the plurality of connection substrates are connected in substantially the same manner as in FIG. 2, but the positive side of the gate drive circuit substrate 25 is the emitter output and the negative side is the gate output, and the gate resistor 24 is not necessary.

(3) FIG. 9 is a view showing a modification of the connection board of the third embodiment.
The difference from the third embodiment is that the positions of the gate connection electrode 4 and the emitter connection electrode 5 are reversed, and the return connection wiring 18 and the emitter connection electrode 5 include the primary coil including the primary side coil of the common mode choke coil. In addition to being connected by the side coil connection circuit 63, the output wiring 19 and the gate connection electrode 4 are connected by a secondary side coil connection circuit 73 including a secondary side coil of a common mode choke coil.
The auxiliary emitter electrode 83 of the semiconductor package 8 is connected to the return connection wiring 18 via the emitter connection electrode 5 and the primary side coil connection circuit 63, and the gate electrode 82 of the semiconductor package 8 is connected to the gate connection electrode 4 and The output wiring 19 is connected via the secondary coil connection circuit 73.
The drive circuit and the plurality of connection substrates are connected in the same manner as in FIG. 2, but the positive side of the gate drive circuit substrate 25 is an emitter output and the negative side is a gate output, and the gate resistor 24 is inserted on the negative side. The

(4) FIG. 10 is a view showing a modification of the connection board of the fourth embodiment.
The difference from the fourth embodiment is that the return connection wiring 18 and the emitter terminal connection wiring 53 are connected, the emitter output wiring 74 is not provided, and the output wiring 19 and the collector terminal connection wiring instead of the gate collector connection circuit 64. 43 has a gate collector output connection circuit 77 that connects the semiconductor element 86 via the gate and collector of the semiconductor element 86, and an emitter connection wiring 67 that connects the return connection wiring 18 and the emitter terminal connection wiring 53. This is the point.
The drive circuit and the plurality of connection substrates are connected in substantially the same manner as in FIG. 6, except that the positive side of the gate drive circuit substrate 25 is an emitter output and the negative side is a gate output, and the gate resistor 24 is inserted on the negative side. The

(5) FIG. 11 shows a case where two connection board configurations of the first embodiment are integrated to form one connection board, and three integrated connection boards are used to form a bridge configuration of three semiconductor elements connected in parallel. The circuit diagram of is shown.
When such a connection substrate is used, the bridge-structured semiconductor elements can be easily connected in parallel.
In addition, although what integrated the structure 2 of the connection board of Example 1 was shown in FIG. 11, the structure 2 of the connection board which concerns on the modification of Example 2-4 or Example 1-4 is integrated. Alternatively, three or more may be integrated to increase the number of bridge configurations in the series direction.
Further, two or more gate drive circuit boards may be integrated, or a single one may be connected separately.

(6) In the third and fourth embodiments and their modifications, the connection substrate is not provided with a gate resistor. However, in the third embodiment, between the return connection wiring 18 and the gate connection electrode 4, For the modified example, between the output wiring 19 and the gate connection electrode 4, for the fourth example, between the return connection wiring 18 and the gate of the semiconductor element 86, and for the modified example of the fourth example, the output wiring 19 and the semiconductor element A gate resistor may be provided between the gate 86.

(7) In the first to third embodiments and their modifications, the auxiliary emitter electrode 83 of the semiconductor package 8 is connected to the emitter connection electrode 5 and the main emitter electrodes 84 are connected to each other by a conducting wire. When a semiconductor package that is not divided into the electrode 83 and the main emitter electrode 84 is used, the emitter electrode may be connected to the emitter connection electrode 5 and the emitter electrodes may be connected to each other by a conducting wire.
(8) Although the lengths of the return connection wiring 18 and the output wiring 19 are the same in the first to fourth embodiments and the modifications thereof, they may not be the same length.
When the lengths of the return connection wiring 18 and the output wiring 19 are not the same, the return wiring connection other end electrode 15, the return wiring connection one end side electrode 12, the output wiring connection other end side electrode 16 and the output Instead of connecting the wiring connection one end side electrode 13 with the second connection line 27 of the same length, the return wiring connection is made so that the difference in length between the return connection wiring 18 and the output wiring 19 is offset. The length of the wiring connecting the other end side electrode 15 and the return wiring connecting one end side electrode 12 and the wiring connecting the output wiring connecting other end electrode 16 and the output wiring connecting one end side electrode 13 are adjusted and connected. It ’s fine.
In each of the embodiments, the other end electrode 14 for forward wiring connection and the one end electrode 11 for forward wiring connection are also connected by the second connection line 27 having the same length, but the forward connection wiring 17 and the forward wiring The length of the wiring connecting the other end-side electrode 14 for connection and the one-end side electrode 11 for connecting the forward wiring is the length of all paths from the positive output terminal 22 to the negative output terminal 23 via the semiconductor elements A to C. Since they are common, any length can be used.

(9) In the first to third embodiments, the configuration for connecting the return connection wiring 18 and the gate connection electrode 4 includes the element connection wiring 61 (first embodiment), the gate resistance circuit 62 (second embodiment), and the primary side. A coil connection circuit 63 (Example 3) is used, and in Example 4, a configuration for connecting the return connection wiring 18 to the collector connection one end side electrode 41 and the collector connection other end side electrode 42 is referred to as a gate collector connection circuit 64. did.
Further, in the modification examples of the first to third embodiments, the configuration for connecting the return connection wiring 18 and the emitter connection electrode 5 includes the emitter wiring 66 (modified example of the first and second embodiments) and the primary side coil connection circuit. 63 (modified example of the third embodiment), and in the modified example of the fourth embodiment, the configuration for connecting the return connection wiring 18 to the emitter connecting one end side electrode 51 and the emitter connecting other end side electrode 52 is used for emitter connection. The wiring 67 and the emitter connection wiring 75 were used.
However, the present invention is not limited to the first to fourth embodiments and the modifications thereof, and as described in the modification (6), the connection substrate of the present invention can take various modes. Electrode 4, collector connection one end side electrode 41 and collector connection other end side electrode 42, emitter connection electrode 5 in the modifications of Examples 1 to 3 and emitter connection in the modification of Example 4 The one end side electrode 51 and the other end electrode 52 for emitter connection are collectively referred to as an element connection electrode. The element connection wiring 61, the gate resistance circuit 62, the primary coil connection circuit 63, the gate collector connection circuit 64, and the emitter wiring 66 are used. The emitter connection wiring 67 and the emitter connection wiring 75 are collectively referred to as an element connection circuit section.
Then, it can be said that the element connection circuit portion connects the return connection wiring 18 and the element connection electrode.

In the first to third embodiments, the configuration for connecting the output wiring 19 and the emitter connection electrode 5 is an output connection wiring 71 (first and second embodiments) and a secondary coil connection circuit 73 (third embodiment). In the fourth embodiment, the configuration for connecting the output wiring 19 to the emitter connecting one end side electrode 51 and the emitter connecting other end side electrode 52 is the emitter output wiring 74 and the emitter connecting wiring 75.
Further, in the modification examples of the first to third embodiments, the configuration for connecting the output wiring 19 and the gate connection electrode 4 includes a gate wiring 72 (modified example of the first embodiment) and an output gate resistance circuit 76 (implemented). The modified example 2) and the secondary coil connection circuit 73 (modified example 3). In the modified example 4, the output wiring 19, the collector connecting one end electrode 41, and the collector connecting other end side are used. A configuration for connecting the electrode 42 is a gate collector output connection circuit 77.
However, as described above, since the connection substrate of the present invention can take various modes, the emitter connection electrode 5 in the first to third embodiments, the one end electrode 51 for emitter connection and the other end side for emitter connection in the fourth embodiment. The electrode 52, the gate connection electrode 4 in the modification of the first to third embodiments, and the collector connection one end side electrode 41 and the collector connection other end side electrode 42 in the modification of the fourth embodiment are collectively referred to as output wiring connection electrodes. The output connection line 71, the gate line 72, the secondary coil connection circuit 73, the emitter output line 74 and the emitter connection line 75, the output gate resistance circuit 76, and the gate collector output connection circuit 77 are provided as an output circuit unit. Collectively.
Then, it can be said that the output circuit unit connects the output wiring 19 and the output wiring connecting electrode.

DESCRIPTION OF SYMBOLS 1 Board | substrate body 2 One end side connector 3 Other end side connector 4 Gate connection electrode 5 Emitter connection electrode 8 Semiconductor package 11 One end side electrode 12 for outgoing wiring connection One end side electrode 13 for return wiring connection One end side electrode 14 for output wiring connection Outward wiring connection other end side electrode 15 Return path wiring other end side electrode 16 Output wiring connection other end side electrode 17 Outward connection wiring 18 Return path connection wiring 19 Output wiring 20 Gate resistor 21 Gate drive circuit 22 Positive output terminal 23 Negative side output terminal 24 Gate resistance 25 Gate drive circuit board 26 First connection line 27 Second connection line 28 Short-circuit line 41 One end side electrode for collector connection 42 Other end side electrode for collector connection 43 Collector terminal connection wiring 51 One end for emitter connection Side electrode 52 Emitter connection other end side electrode 53 Emitter terminal connection wiring
61 Element connection wiring 62 Gate resistance circuit 63 Primary coil connection circuit 64 Gate collector connection circuit 66 Emitter wiring 71 Output connection wiring 72 Gate wiring 73 Secondary coil connection circuit 74 Emitter output wiring 75 Emitter connection wiring 76 Output Gate resistor circuit 77 Gate collector output connection circuit 81 Semiconductor element 82 Gate electrode 83 Auxiliary emitter electrode 84 Main emitter electrode 85 Collector electrode 86 Semiconductor element

The invention according to claim 2 is the connector-coupled gate parallel connection substrate according to claim 1,
The element connection electrode and the output wiring connection electrode are a gate connection electrode and an emitter connection electrode, or an emitter connection electrode and a gate connection electrode ,
The element connection circuit section and the output circuit section include an element connection wiring for connecting the return connection wiring and a gate connection electrode as the element connection electrode, and an emitter connection as the output wiring and the output wiring connection electrode. An output connection wiring for connecting an electrode for output, or an emitter wiring for connecting the return connection wiring and an emitter connection electrode as the element connection electrode, and the output wiring and the output wiring connection electrode as It is a gate wiring that connects the gate connection electrode.

The invention according to claim 3 is the connector coupled gate parallel connection substrate according to claim 1,
The element connection electrode and the output wiring connection electrode are a gate connection electrode and an emitter connection electrode, or an emitter connection electrode and a gate connection electrode ,
The element connection circuit section and the output circuit section connect the return connection wiring and the gate connection electrode as the element connection electrode via a gate resistor, and the output wiring and the output wiring connection. An emitter connection wire connecting the emitter connection electrode as an electrode, or an emitter wire connecting the return connection wire and the emitter connection electrode as the element connection electrode, and the output wire and the output wire. It is an output gate resistance circuit that connects a gate connection electrode as a connection electrode via a gate resistor.

The invention according to claim 4 is the connector coupled gate parallel connection substrate according to claim 1,
The element connection electrode and the output wiring connection electrode are a gate connection electrode and an emitter connection electrode, or an emitter connection electrode and a gate connection electrode ,
The element connection circuit unit and the output circuit unit include a primary side coil connection circuit that connects the return connection wiring and a gate connection electrode as the element connection electrode via a primary side coil of a common mode choke coil, and It is a secondary coil connection circuit for connecting an output wiring and an emitter connection electrode as the output wiring connection electrode via a secondary coil of the common mode choke coil, or the return connection wiring and the element connection A primary side coil connection circuit for connecting an emitter connection electrode as a common electrode via a primary side coil of the common mode choke coil, and the output line and a gate connection electrode as the output line connection electrode. It is a secondary side coil connection circuit connected via the secondary side coil of a mode choke coil.

According to the invention of claim 2, in addition to the effect of the connection substrate of the invention of claim 1, the element connection circuit section and the output circuit section include a return connection wiring and a gate connection electrode as an element connection electrode. An element connection wiring to be connected and an output connection wiring for connecting an output wiring and an emitter connection electrode as an output wiring connection electrode, or a return connection wiring and an emitter connection electrode as an element connection electrode are connected. Since it is a gate wiring for connecting the emitter wiring and the output wiring to the gate connection electrode as the output wiring connection electrode , the connection substrate is composed of only eight electrodes and five wirings. Manufacturing costs can be reduced.

According to the invention of claim 3, in addition to the effect of the connection substrate of the invention of claim 1, the element connection circuit section and the output circuit section include a return connection wiring and a gate connection electrode as an element connection electrode. A gate resistor circuit connected via a gate resistor and an output connection wire connecting an output wire and an emitter connection electrode as an output wire connection electrode, or an emitter connection as a return connection wire and an element connection electrode An output gate resistor circuit for connecting an emitter wiring for connecting electrodes and an output wiring to a gate connecting electrode as an output wiring connecting electrode via a gate resistor, and an individual gate close to the gate of each semiconductor element Since there is a resistance, a resonance phenomenon between adjacent gates hardly occurs.
Therefore, the oscillation phenomenon of the semiconductor element can be suppressed.

According to the invention of claim 4, in addition to the effect of the connection substrate of the invention of claim 1, the element connection circuit portion and the output circuit portion include the return connection wiring and the gate connection electrode as the element connection electrode. The primary side coil connection circuit connected via the primary side coil of the common mode choke coil and the output wiring and the emitter connection electrode as the output wiring connection electrode are connected via the secondary side coil of the common mode choke coil. Primary coil connection circuit that connects the return connection wiring and the emitter connection electrode as the element connection electrode via the primary coil of the common mode choke coil, and the output wiring and output wiring connection. since a secondary-side coil connection circuit for connecting through the secondary side coil of the common mode choke coil and a gate connecting electrode as use electrodes Without any change at all connection mode between the connection substrate and the semiconductor element can be noise current generated by the driving of the power converter to prevent the semiconductor device to malfunction by flowing in the driving wiring.

Claims (6)

A connector-coupled gate parallel connection substrate for driving a plurality of semiconductor elements in parallel with one drive circuit,
One end side electrode for outbound wiring connection and the other end side electrode for outbound wiring connection;
One end side electrode for return line connection and the other end side electrode for return line connection;
One end side electrode for output wiring connection and the other end side electrode for output wiring connection;
An element connection electrode;
An output wiring connection electrode;
Outbound connection wiring connecting the one end side electrode for outbound wiring connection and the other end side electrode for outbound wiring connection;
A return connection wiring for connecting the one end side electrode for the return path connection and the other end side electrode for the return path connection;
An output wiring for connecting the one end side electrode for output wiring connection and the other end side electrode for output wiring connection;
An element connection circuit portion for connecting the return connection wiring and the element connection electrode;
An output circuit portion for connecting the output wiring and the output wiring connection electrode is provided. A connector-connected gate parallel connection substrate, wherein: The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
Whether the element connection circuit section and the output circuit section are element connection wiring that connects the return connection wiring and the gate connection electrode, and output connection wiring that connects the output wiring and the emitter connection electrode. 2. The connector connection according to claim 1, comprising: an emitter wiring that connects the return connection wiring and the emitter connection electrode; and a gate wiring that connects the output wiring and the gate connection electrode. Type gate parallel connection board. The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
The element connection circuit unit and the output circuit unit are connected to the return circuit wiring and the gate connection electrode via a gate resistor, and to the output circuit for connecting the output wiring and the emitter connection electrode. An emitter wiring that connects the return connection wiring and the emitter connection electrode, and an output gate resistance circuit that connects the output wiring and the gate connection electrode via a gate resistor. The connector-coupled gate parallel connection substrate according to claim 1. The element connection electrode is a gate connection electrode or an emitter connection electrode,
The output wiring connection electrode is an emitter connection electrode or a gate connection electrode,
The element connection circuit section and the output circuit section include a primary side coil connection circuit that connects the return path connection wiring and the gate connection electrode via a primary side coil of a common mode choke coil, and the output wiring and the emitter connection. A secondary-side coil connection circuit for connecting a connection electrode via a secondary-side coil of the common-mode choke coil, or connecting the return-connection wiring and the emitter-connection electrode to the primary-side coil of the common-mode choke coil A primary side coil connection circuit that is connected via a secondary side coil connection circuit that connects the output wiring and the gate connection electrode via a secondary side coil of the common mode choke coil. The connector-connected gate parallel connection board according to claim 1. The element connecting electrode is a collector connecting one end side electrode and a collector connecting other end side electrode,
The output wiring connection electrode is an emitter connection one end side electrode and an emitter connection other end side electrode,
A substrate-mounted semiconductor element, a collector terminal connection wiring for connecting the one end electrode for collector connection and the other end electrode for collector connection, and an emitter for connecting the one end electrode for emitter connection and the other end electrode for emitter connection Further provided with terminal connection wiring,
The element connection circuit unit is a gate collector connection circuit that connects the return connection wiring and the collector terminal connection wiring through a gate and a collector of the substrate-mounted semiconductor element,
The output circuit section is an emitter output wiring that connects the output wiring and the emitter terminal connection wiring, and an emitter connection wiring that connects the emitter of the substrate-mounted semiconductor element and the emitter terminal connection wiring. The connector-coupled gate parallel connection board according to claim 1. The element connection electrode is an emitter connection one end side electrode and an emitter connection other end side electrode,
The output wiring connection electrode is a collector connection one end side electrode and a collector connection other end side electrode,
A substrate-mounted semiconductor element, a collector terminal connection wiring for connecting the one end electrode for collector connection and the other end electrode for collector connection, and an emitter for connecting the one end electrode for emitter connection and the other end electrode for emitter connection Further provided with terminal connection wiring,
The element connection circuit section is an emitter connection wiring that connects the return path connection wiring and the emitter terminal connection wiring, and an emitter connection wiring that connects the emitter of the substrate-mounted semiconductor element and the emitter terminal connection wiring,
The connector according to claim 1, wherein the output circuit unit is a gate collector output connection circuit that connects the output wiring and the collector terminal connection wiring via a gate and a collector of the substrate-mounted semiconductor element. Connected gate parallel connection board.

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