JP2018007167A - Switch circuit and semiconductor device employing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-reliability switch circuit which implements an ideal connection of an input line and an output line.SOLUTION: A switch circuit comprises: multiple changeover switches for which the numbers of input lines and the numbers of output lines are equal to each other; and at least either first selectors for selecting input lines or second selectors for selecting output lines among the multiple changeover switches. In each of the changeover switches, the input lines are connected to the first selectors that are different from each other, and the output lines are connected to the second selectors that are different from each other. The first selector and the second selector select an input line and an output line connected to switch elements turning on the switch element connected to the input line and the output line that should be connected, and do not select an input line and an output line connected to switch elements turning on the switch elements connected to an input line and an output line that should not be connected. In a case where both the first selector and the second selector are included, the first selector and the second selector select an input line and an output line of the same changeover switch.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device equipped with a switch circuit such as a crossbar switch using a nonvolatile variable resistance element.

  An FPGA (Field Programmable Gate Array) that allows a user to program functions has a problem that the number of transistors is larger and the chip size is larger than a custom-designed ASIC (Application Specific Integrated Circuit). In particular, an SRAM (Static Random Access Memory) for storing program information and a number of pass transistors for switching signals are required. Non-Patent Document 1 discloses that the chip area can be reduced by replacing the SRAM and the pass transistor with a small area nonvolatile resistance change element (hereinafter referred to as a resistance change switch).

  Patent Document 1 discloses a resistance change switch 9 using metal ion migration and an electrochemical reaction in a resistance change layer 91 as shown in FIG. 9A. The resistance change switch 9 has a three-layer structure of an active electrode 92, a resistance change layer 91, and an indifferent electrode 93. The active electrode 92 supplies the metal of the active electrode 92 as metal ions to the resistance change layer 91 according to the applied voltage. On the other hand, the indifferent electrode 93 does not supply metal ions to the resistance change film 91.

  In Patent Document 1, copper is used as an example of the active electrode. Since copper is used as a material for the multilayer wiring of the integrated circuit, one of the copper multilayer wiring can be used as an active electrode of the resistance change switch. This simplifies the structure and reduces the manufacturing process.

  The operation of the resistance change switch 9 is as follows. First, when the active electrode 92 is grounded and a negative voltage is applied to the indifferent electrode 93, a metal such as copper of the active electrode 92 is dissolved into the resistance change layer 91 as metal ions. The metal ions are deposited as a metal in the resistance change layer 91, and a metal bridge that connects the active electrode 92 and the indifferent electrode 93 is formed by the deposited metal. When the active electrode 92 and the indifferent electrode 93 are electrically connected by metal bridge, the resistance change switch 9 changes from the high resistance state to the low resistance state.

  Next, when the active electrode 92 of the resistance change switch 9 in the low resistance state is grounded and a positive voltage is applied to the indifferent electrode 93, the metal bridge is dissolved in the resistance change layer 91 as metal ions, and the metal A part of the bridge is cut. Thereby, the electrical connection by the metal bridge | crosslinking of the active electrode 92 and the indifferent electrode 93 is lose | eliminated, and the resistance change switch 9 returns to a high resistance state. It should be noted that the electrical characteristics have changed since the resistance between the active electrode 92 and the indifferent electrode 93 has increased or the capacitance between the electrodes has changed since the stage before the electrical connection was completely cut off. Connection is lost. In order to change the resistance change switch 9 from the high resistance state to the low resistance state, a negative voltage may be applied to the indifferent electrode 93 again.

  Patent Document 1 also discloses a complementary resistance change switch 90 in which two resistance change switches as shown in FIG. 9B are connected in series. The complementary resistance change switch 90 can improve the reliability when the switch is off, and can lower the program voltage.

  In the resistance change switch, the low resistance state is turned on and the high resistance state is turned off. The complementary resistance change switch 90 can be turned on when the two resistance change switches are in the low resistance state, and can be turned off when at least one of the two resistance change switches is in the high resistance state. The program voltage refers to a voltage necessary for changing the resistance change switch from the high resistance state to the low resistance state, and is preferably 2 V or less. When the resistance change switch is applied to a programmable logic circuit such as an FPGA, it is necessary that the resistance change does not occur even when an operating voltage (for example, 1 V) of the integrated circuit is applied.

  That is, even when 1 V corresponding to the operating voltage is applied to the resistance change switch in the high resistance state for 10 years, which is the lifetime of the integrated circuit, the off-state reliability that does not change to the low resistance state is required. The complementary resistance change switch solves this problem by the following configuration, and succeeds in obtaining high off-time reliability while reducing the program voltage.

  The metal deposition type resistance change switch has bipolar characteristics. In a complementary resistance change switch, indifferent electrodes or active electrodes are connected in series. FIG. 9B shows a configuration in which indifferent electrodes are connected to each other. When a voltage is applied between the active electrodes 92a and 92b at both ends of the complementary resistance change switch 90, regardless of the polarity of the voltage, one of the two resistance change switches has a voltage that does not cause a resistance change. Will be applied. With this configuration, it is possible to maintain a high resistance state for 10 years or more when an operating voltage of 1 V is applied to the integrated circuit. Furthermore, when programming the complementary resistance change switch 90, it is possible to program at a low voltage of about 2V by applying a voltage to each resistance change element independently. The same applies when the active electrodes are connected to each other.

  When the complementary resistance change switch is applied to a programmable logic circuit such as an FPGA, as a crossbar switch in which switch cells 900 in which the complementary resistance change switch 90 and the selection transistor shown in FIG. 9C are connected are arranged in a two-dimensional array. Used. In the switch cell 900, the indifferent electrode is connected to the selection transistor via the control line, and the two active electrodes are connected to the input line and the output line, respectively.

  FIG. 10 shows a configuration of a 2 × 2 crossbar switch disclosed in Patent Document 2 in which switch cells are two-dimensionally arranged. In the crossbar switch of FIG. 10, 2 × 2 switch cells (switch cells 1000 to 1003) corresponding to the switch cell 900 of FIG. 9C are arranged. Each switch cell is connected to an input line 1040, an input line 1041, an input line 1050, an input line 1051, a control line 1060, and a control line 1061, respectively.

  The input line 1040 is connected to the column selection transistor 1020, and the input line 1041 is connected to the column selection transistor 1021. The output line 1050 is connected to the row selection transistor 1010, and the output line 1051 is connected to the row selection transistor 1011. The control line 1060 is connected to the control line selection transistor 1030, and the control line 1061 is connected to the control line selection transistor 1031. Each select transistor is connected to a voltage generation driver 1005, and each complementary resistance change switch can be programmed by controlling the gate voltage of each transistor.

  For example, when the switch cell 1000 and the switch cell 1003 are programmed to be in the on state and the switch cell 1001 and the switch cell 1002 are in the off state, the input line 1040 is electrically connected to the output line 1050 through the switch cell 1000. Is done. The input line 1041 is electrically connected to the output line 1051 through the switch cell 1003. As described above, signal routing becomes possible.

  FIG. 11 shows a cross-sectional structure of the complementary resistance change switch disclosed in Patent Document 1. The first resistance change switch 1101a that constitutes the complementary resistance change switch 1100 includes a first copper wiring 1103a, a resistance change film 1106, and an upper electrode 1107. Here, the first copper wiring 1101a, the resistance change film 1106, and the upper electrode 1107 correspond to the active electrode 92a, the resistance change layer 91a, and the indifferent electrode 93 in FIG. 9B, respectively.

  The second resistance change switch 1101b includes a first copper wiring 1103b, a resistance change film 1106, and an upper electrode 1107. Here, the first copper wiring 1103b, the resistance change film 1106, and the upper electrode 1107 correspond to the active electrode 92b, the resistance change layer 91b, and the indifferent electrode 93 in FIG. 9B, respectively.

  The first copper wiring 1103 a and the first copper wiring 1103 b are covered with the first barrier metal 1104 a and the first barrier metal 1104 b except for the upper surface, and are embedded in the first interlayer insulating film 1102. The upper surfaces of the first copper wirings 1103 a and 1103 b are covered with a first barrier insulating film 1105 and are in contact with the resistance change film 1106 through an opening provided in the first barrier insulating film 1105.

  The resistance change film 1106 covers the opening of the first barrier insulating film 1105, and a part thereof is in contact with the upper surface of the first barrier insulating film 1105. The resistance change film 1106 is in contact with the upper electrode 1107. The upper electrode 1107 is in contact with a copper plug 1110 whose surface is covered with a second barrier metal 1109. Plug 1110 is in contact with second copper wiring 1111. The plug 1110 and the second copper wiring 1111 are embedded in the second interlayer insulating film 1108, and the upper surface of the second copper wiring 1111 is covered with the second barrier insulating film 1112.

  Non-Patent Document 1 discloses that an FPGA using a crossbar switch by a complementary resistance change switch is superior in low power consumption performance and low signal delay performance compared to an FPGA using an SRAM and a pass transistor. Yes.

International Publication No. 2012/043502 International Publication No. 2013/190741

M.M. Miyamura et al. , “0.5-V Highly Power-Efficient Programmable Logic using Nonvolatile Configuration Switch in BEOL”, Proceedings of the Propagation 15 ACM / SIGDA International Symposium.

  However, the crossbar switch using the complementary resistance change switch disclosed in Patent Document 1, Patent Document 2, and Non-Patent Document 1 has the following problems. That is, if the resistance change switch that should be programmed to the low resistance state is in the high resistance state, and if the resistance change switch that should be in the high resistance state is in the low resistance state, the input line is output correctly. Cannot connect to the line. As a result, a correct operation cannot be performed due to an incorrect connection, and a failure such as a breakage of an integrated circuit due to a signal collision occurs.

  As a cause of the above-described malfunction of the complementary resistance change switch, a malfunction due to a noise signal at the time of programming, environmental temperature, high energy cosmic rays, or the like is assumed. The crossbar switch using the complementary resistance change switch disclosed in Patent Literature 1, Patent Literature 2, and Non-Patent Literature 1 cannot prevent the above-described problems of the complementary resistance change switch.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a switch circuit such as a crossbar switch with high reliability capable of realizing a connection between an input line and an output line. is there.

  The switch circuit according to the present invention includes an input line, an output line, and a switch element that is connected to the input line and the output line to enable signal transmission by the input line and the output line. A plurality of change-over switches having the same number of input lines and the same number of output lines; a first selector for selecting the input line among the plurality of change-over switches; and the selection of the output line At least one of the second selectors, wherein each of the input lines of each of the changeover switches is connected to a different first selector, and each of the output lines is different from each other. The first selector and the second selector are connected to a selector, and the input line to be connected and the input line to be connected to the switch element in which the switch element to be connected to the output line is ON Each of the output lines is selected, and the input line that should not be connected and the switch element that is connected to the output line are turned on. When both the selector and the second selector are provided, the first selector and the second selector respectively select the input line and the output line of the same changeover switch.

  A semiconductor device according to the present invention includes an input line, an output line, and a switch element that is connected to the input line and the output line to enable signal transmission through the input line and the output line. A plurality of change-over switches having the same number of input lines and the same number of output lines; a first selector for selecting the input line among the plurality of change-over switches; and the selection of the output line At least one of the second selectors, wherein each of the input lines of each of the changeover switches is connected to a different first selector, and each of the output lines is different from each other. The first selector and the second selector are connected to a selector, and the input line to be connected to the switch element in which the switch element to be connected to the input line and the output line to be connected is ON Selecting each of the force lines, and not selecting the input line and the output line connected to the switch element in which the switch element connected to the input line and the output line, which should not be connected, is on. When both the selector and the second selector are included, the first selector and the second selector each include a switch circuit that selects the input line and the output line of the same selector switch.

  According to the present invention, it is possible to provide a switch circuit such as a highly reliable crossbar switch that can realize a desired connection between an input line and an output line.

It is a figure which shows the structure of the switch circuit of the 1st Embodiment of this invention. It is a figure which shows the structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows a part (1st crossbar switch) of the structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows a part (2nd crossbar switch) of a structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows a part of structure of the crossbar switch circuit of the 2nd Embodiment of this invention (another example of a 1st crossbar switch). It is a figure which shows the structure of the resistance change switch of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows the structure of the complementary resistance change switch of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows the structure of the switch cell of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows the circuit structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows a part of circuit structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is sectional drawing which shows the device structure of the crossbar switch circuit of the 2nd Embodiment of this invention. It is a figure which shows the structure of the crossbar switch circuit of the 3rd Embodiment of this invention. It is a figure which shows the truth table of the majority logic circuit of the crossbar switch circuit of the 3rd Embodiment of this invention. It is sectional drawing which shows the device structure of the crossbar switch circuit of the 3rd Embodiment of this invention. It is a figure which shows the structure of a related resistance change switch. It is a figure which shows the structure of a related complementary resistance change switch. It is a figure which shows the structure of a related switch cell. It is a figure which shows the circuit structure of the related crossbar switch circuit. It is sectional drawing which shows the device structure of the related complementary resistance change switch.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the preferred embodiments described below are technically preferable for carrying out the present invention, but the scope of the invention is not limited to the following.
(First embodiment)
FIG. 1 is a diagram illustrating a configuration of a switch circuit according to a first embodiment of the present invention. The switch circuit 1 according to this embodiment includes an input line 11, an output line 12, and a switch element 13 that enables signal transmission between the input line 11 and the output line 12 by being connected to the input line 11 and the output line 12 and turned on. And a plurality of changeover switches 14. The plurality of changeover switches 14 have the same number of input lines 11 and the same number of output lines 12.

  Further, at least one of a first selector 15 for selecting the input line 11 and a second selector 16 for selecting the output line 12 is provided between the plurality of changeover switches 14. Furthermore, each input line 11 of each changeover switch 14 is connected to a different first selector 15, and each output line 12 is connected to a different second selector 16.

  Further, the first selector 15 and the second selector 16 respectively connect the input line 11 and the output line 12 connected to the switch element 13 in which the switch element 13 connected to the input line 11 and the output line 12 to be connected is ON. select. The first selector 15 and the second selector 16 do not select the input line 11 and the output line 12 connected to the switch element 13 in which the switch element 13 connected to the input line 11 and the output line 12 that should not be connected is ON. . Further, when both the first selector 15 and the second selector 16 are provided, the first selector 15 and the second selector 16 respectively select the input line 11 and the output line 12 of the same selector switch 14.

  According to the switch circuit 1 of the present embodiment, it is possible to select the input line 11 and the output line 12 connected to the switch element 13 that is correctly turned on. Thereby, the signal of the input line 11 can be guided to the correct output line 12.

As described above, according to the present embodiment, it is possible to provide a highly reliable switch circuit that can realize the desired connection between the input line and the output line.
(Second Embodiment)
FIG. 2A is a diagram illustrating a configuration of a crossbar switch circuit 2 that is a switch circuit according to a second embodiment of the present invention. FIG. 2B is a diagram illustrating a configuration of the first crossbar switch 21 included in the crossbar switch circuit 2 of the present embodiment. FIG. 2C is a diagram showing a configuration of the second crossbar switch 22 constituting the crossbar switch circuit 2 of the present embodiment.

  The crossbar switch circuit 2 includes a first crossbar switch 21, a second crossbar switch 22 that overlaps the first crossbar switch 21, a selector 25, a selector 26, and an information providing unit 27.

  The first crossbar switch 21 includes first input lines 211a, 211b, and 211c that extend in substantially the same direction in the plane, and a first input line that intersects these in a plan view and extends in the same direction in the same plane. Output lines 212a, 212b, and 212c. The first input line 211 and the first output line 212 are, for example, substantially orthogonal. Further, the first input line 211 and the first output line 212 are provided at intersections in plan view, and are connected to the first input line 211 and the first output line 212. First switch cells 213a to 213i for turning on / off the connection between the line 211 and the first output line 212 are provided.

  The second crossbar switch 22 includes second input lines 221a, 221b, and 221c that extend in substantially the same direction in the plane, and a second input line 221a, 221b, and 221c that intersects these in plan view and extends in the same direction in the same plane Output lines 222a, 222b, and 222c. For example, the second input line 221 and the second output line 222 are substantially orthogonal to each other. Further, the second input line 221 and the second output line 222 are provided at intersections in plan view, and are connected to the second input line 221 and the second output line 222, and these second input lines are connected. Second switch cells 223a to 223i for turning on / off the connection between the line 221 and the second output line 222 are provided.

  The selector 25 includes a set of the first input line 211a and the second input line 221a, a set of the first input line 211b and the second input line 221b, and a set of the first input line 211c and the second input line 221c. It is provided for each group. The incoming line 23 is connected to the first input line 211 or the second input line 221 selected by the selector 25.

  The selector 26 includes a set of the first output line 212a and the second output line 222a, a set of the first output line 212b and the second output line 222b, and a set of the first output line 212c and the second output line 222c. It is provided for each group. The outgoing line 24 is connected to the first output line 212 or the second output line 222 selected by the selector 26.

  The selector 26 also monitors the output signals from the first output line 212 and the second output line 222 of the signals input to the first input line 211 and the second input line 221, respectively. Can do.

  In addition, a detector (not shown) is provided separately from the selector 26 to monitor each output signal from the first output line 212 and the second output line 222 and provide the result of monitoring to each selector 26. You may do it. That is, the selector 26 may incorporate the detector, or the detector may be provided separately.

  The selector 25 and the selector 26 are a set of the first input line 211 and the first output line 212 of the first crossbar switch 21 or the second input line 221 and the second output of the second crossbar switch 22. Either one of the set of lines 222 is selected. When the first switch cell 213 that turns on / off the connection between the first input line 211 and the first output line 212 is in the correct on state, the selector 25 and the selector 26 are connected to the first input line 211 and the first output line 212. A set of output lines 212 is selected. Further, when the second switch cell 223 for turning on / off the connection between the second input line 221 and the second output line 222 is in the correct on state, the set of the second input line 221 and the second output line 222 is set. Select.

  When both the ON state of the first switch cell 213 and the ON state of the second switch cell 223 are correct, the selector 25 and the selector 26 select one of the predetermined groups. Alternatively, both sets may be selected. Also, if both are in the wrong OFF state, by resetting at least one of the first switch cell 213 and the second switch cell 223 to the ON state, a pair connected to the switch cell in the correct ON state is obtained. You can choose.

  The information providing unit 27 holds on / off setting information for each switch cell when the on / off of the switch cell is set (programmed) in advance, and provides the information to the selector 25 and the selector 26. That is, the information providing unit 27 includes a memory that holds on / off setting information and a circuit that provides the memory to the selector 25 and the selector 26.

  Based on the on / off setting information, the selector 25 and the selector 26 are a pair of the first input line 211 and the first output line 212 or the second input line 221 connected to the switch cell in the correct on state. And the second output line 222 can be selected.

  For example, in the on / off setting information, the first switch cell 213a and the second switch cell 223a are assumed to be on (●). When the selector 25a and the selector 26a select a pair of the first input line 211a and the first output line 212a, the first switch cell 213a is erroneously turned off (O). 23 cannot receive a signal input from the terminal 23. Therefore, the selector 26a selects the second output line 222a based on this result. The selector 26a notifies the selector 25a that the second output line 222a has been selected. Upon receiving this notification, the selector 25a selects the second input line 221a.

  Since the second switch cell 223 a is correctly turned on (●), the selector 26 a can receive a signal input from the incoming line 23. The selector 26a notifies this result to the selector 25a. Thus, the selector 25a and the selector 26a decide to select a pair of the second input line 221a and the second output line 222a. A signal input from the input line 23 is output from the output line 24 through a set of the second input line 221a and the second output line 222a of the second crossbar switch 22.

  2D shows a case where the first switch cell 213d is erroneously turned on (●) in the first crossbar switch 21, unlike FIG. 2B. Here, in the on / off setting information, the first switch cell 213a and the second switch cell 223a are on (●), the first switch cell 213d and the second switch cell 223d are off (◯), Assume that the first switch cell 213e and the second switch cell 223e are on (●).

  When the selector 25a and the selector 26a select the pair of the first input line 211a and the first output line 212a of the first crossbar switch 21, the first switch cell 213a is correctly turned on (●). The selector 26 a can receive a signal input from the incoming line 23. However, at this time, if the selector 25b and the selector 26b select the pair of the first input line 211b and the first output line 212b, the first switch cell 213d is erroneously turned on (●). The selector 26b receives the signal of the first input line 211a.

  When the selector 26b confirms that the signal of the first input line 211a is received from the characteristics of the signal of the first input line 211a such as the timing of the clock, for example, one of the following first and second operations is performed. Is possible.

  As the first operation, the selector 25b and the selector 26b switch to a pair of the second input line 221b and the second output line 222b. Accordingly, the selector 26b can receive only the signal of the second input line 221b without receiving the signal of the first input line 211a. The selector 26a can receive the signal of the first input line 211a.

  As the second operation, when the selector 26a receives a notification from the selector 26b that the selector 26b has received the signal of the first input line 211a, the selector 25a and the selector 26a are connected to the second crossbar switch 22. Switch to the set of the input line 221a and the second output line 222a. Thereby, the selector 26b can receive only the signal of the first input line 211b without receiving the signal of the first input line 211a. Further, the selector 26a can receive the signal of the second input line 221a.

  As described above, the selector 25 and the selector 26 can realize the connection between the incoming line 23 and the outgoing line 24 via the switch cell having the correct on / off state based on the on / off setting information. .

  There are cases where the connection between the incoming line 23 and the outgoing line 24 is preset as one-to-many correspondence or many-to-one correspondence instead of one-to-one correspondence. In this case, the connection between the incoming line 23 and the outgoing line 24 via the switch cell having the correct on / off state may be realized so that the signal of each incoming line 23 is supplied to the predetermined outgoing line 24. .

  The crossbar switch circuit 2 in FIG. 2A has a two-layer configuration in which the first crossbar switch 21 and the second crossbar switch 22 are stacked. However, the configuration is not limited to this, and the number of stacks is arbitrary. be able to. The first crossbar switch 21 and the second crossbar switch 22 both have three input lines and three output lines. However, the present invention is not limited to this, and any one or more input lines can be used. And any one or more output lines.

  The crossbar switch circuit 2 sets the same on / off for the first crossbar switch 21 and the second crossbar switch 22 and selects the correct one when there is an error. This is not a limitation. The crossbar switch 2 sets separate on / off for the first crossbar switch 21 and the second crossbar switch 22, and the first crossbar switch 21 and the second crossbar switch 22 are set in accordance with the operation of the logic circuit connected to the crossbar switch. Any one of the crossbar switches 22 may be selected.

  In the crossbar switch circuit 2, the selector 25 can be omitted. That is, even if the signal input from the input line 23 is supplied to both the first input line 211 and the second input line 221, the first output line connected to the switch cell in which the selector 26 is correctly turned on. By selecting 212 or the second output line 222, the signal input from the incoming line 23 can be output to the correct outgoing line 24. At this time, the selector 26 only needs to be able to identify each signal input from each input line. For identifying each signal input from each input line, for example, the timing of the clock of each signal input from each input line can be used.

  Further, the crossbar switch circuit 2 can omit the selector 26. At this time, a detector (not shown) that monitors each output signal of the first output line 212 and the second output line 222 and provides the result of monitoring to each selector 25 is provided. The selector 25 receives the result of monitoring by the detector, selects the first input line 211 or the second input line 221 connected to the switch cell in the correct ON state, and thereby receives a signal input from the input line 23. A correct output line 24 can be output. Each selector 25 may incorporate the detector.

  A resistance change switch can be used for the switch cell of the crossbar switch circuit 2. FIG. 3A is a diagram illustrating a basic configuration of the resistance change switch 3 of the crossbar switch circuit 2. The resistance change switch 3 has a three-layer structure including an active electrode 32, a resistance change layer 31, and an indifferent electrode 33. The resistance change switch 3 can be a metal deposition type switch that utilizes metal ion migration and electrochemical reaction in the resistance change layer 31. The state where the active electrode 32 and the indifferent electrode 33 are connected by the metal deposition to become low resistance is turned on, and a part or all of the metal deposition disappears, and the connection between the active electrode 32 and the indifferent electrode 33 is cut to become high resistance. Turn off the state.

  For the resistance change layer 31, an oxide such as tantalum oxide or titanium oxide used for CBRAM (Conductive Bridge Random Access Memory) or ReRAM (Resistance Random Access Memory), or a chalcogenide material such as copper sulfide or silver sulfide is used. it can.

  For the active electrode 32, for example, copper can be used as a metal that can supply metal ions to the resistance change layer 31. Since copper is used as a material for the multilayer wiring of the integrated circuit, one of the copper multilayer wiring can be used as an active electrode of the resistance change switch. This simplifies the structure and reduces the manufacturing process.

  For the indifferent electrode 33, it is preferable to use a metal that is difficult to diffuse or ion-conduct, and to be a metal material having a smaller absolute value of the free energy of oxidation than the metal component (for example, tantalum) of the resistance change layer 31. For the indifferent electrode 33, for example, ruthenium, platinum, and a ruthenium alloy can be used.

  FIG. 3B is a diagram illustrating a configuration of the complementary resistance change switch 30 of the crossbar switch 2. The complementary resistance change switch 30 has a structure in which the resistance change switches 3 are connected in series. Since the resistance change switch 3 has bipolar characteristics, the complementary resistance change switch 30 connects the indifferent electrodes or the active electrodes in series. FIG. 3B shows a configuration in which indifferent electrodes are connected to each other. When a voltage is applied between the active electrodes 32a and 32b at both ends of the complementary resistance change switch 30, regardless of the polarity of the voltage, one of the two resistance change switches has a voltage that does not cause a resistance change. Will be applied.

  Thereby, in the complementary resistance change switch 30, compared with the simple resistance change switch 3, the switch-off reliability is improved and the program voltage required to change from the high resistance state to the low resistance state is lowered. be able to. For example, it is possible to achieve both a low program voltage of 2 V or less and off-state reliability that does not change to a low resistance state even when 1 V, which is the operating voltage of the integrated circuit, is applied for 10 years, which is the lifetime of the integrated circuit. .

  FIG. 3C is a diagram illustrating a configuration of the switch cell 300 of the crossbar switch circuit 2. In the switch cell 300, one active electrode 32a of the complementary resistance change switch 30 is connected to the input line 301, the other active electrode 32b is connected to the output line 302, and the indifferent electrode 33 is connected to the selection transistor 304 via the control line 303. It has the structure to do. The first crossbar switch 21 and the second crossbar switch 22 have a configuration in which switch cells 300 are two-dimensionally arrayed and connected.

  FIG. 4A is a diagram illustrating a circuit configuration of the crossbar switch circuit according to the present embodiment. FIG. 4A shows a crossbar switch circuit having a 2 × 2 crossbar switch. 4B shows a part of the circuit configuration of the crossbar switch circuit of FIG. 4A, and shows a 2 × 2 crossbar switch that overlaps FIG. 4A. The scale of the crossbar switch is not limited to 2 × 2.

  C00, C10, C01, C11, PL0L0 ′, PL1, PL1, PL1 ′, PH0 ′, PH1 ′, IN0 ′, IN1 ′, OUT0 ′, and OUT1 ′ in FIG. 4B are C00, C10, and C01 in FIG. 4A. , C11, PL0 ′, PL1 ′, PH0 ′, PH1 ′, IN0 ′, IN1 ′, OUT0 ′, and OUT1 ′. As a result, a multilayer crossbar switch in which 2 × 2 crossbar switches are stacked can be configured.

  Furthermore, in order to operate the crossbar switch, a decoder (row selection decoders 410 and 411 and column selection decoders 420 and 421) for selecting a program line when turning on / off the switch cell, and a selector for selecting an input line 440 and 441 and selectors 450 and 451 for selecting an output line.

  In addition, switch cells overlapping at the same address of the 2 × 2 crossbar switch share the selection transistors T00, T10, T01, and T11, respectively. Thereby, when the scale of the crossbar switch becomes M × N (M and N are positive integers), the area of the peripheral circuit and the selection transistor for selecting and programming (on / off setting) each switch cell is as follows. Except for the voltage generation driver 460, it is possible to suppress the increase in scale by about (M + N) times. This means that the area to be increased is small compared to the case where the number of switch cells becomes M × N times. That is, by sharing the selection transistor, there is an advantage that the area efficiency of the crossbar switch increases as the scale of the crossbar switch increases. Note that the area of the crossbar switch can be reduced by sharing the selection transistors T00, T01, T01, and T11. However, one selection transistor may be provided in one switch cell without sharing.

  Further, since the complementary resistance change switch is formed in the wiring layer, each crossbar switch can be physically stacked. Therefore, even if the scale of the crossbar switch is increased, the area increase is greatly suppressed.

  The crossbar switch circuit of FIGS. 4A and 4B has two layers of crossbar switches in which 2 × 2 switch cells of FIG. 3C are arranged. The switch cell in FIG. 4A is connected to input lines IN0 and IN1, output lines OUT0 and OUT1, and control lines PGH0 and PGH1. 4B is connected to input lines IN0 'and IN1', output lines OUT0 'and OUT1', and control lines PGH0 and PGH1.

  Focusing on the switch cell 400, the input line IN0 is connected to the column selection decoder 420 and the selector 440, the output line OUT0 is connected to the row selection decoder 410 and the selector 450, and the complementary resistance change switch control line C00 is connected to the PR0 via the selection transistor T00. Connect to. PR0 is further connected to the voltage generation driver 460 (C) via the control line selection transistor 430. The column selection decoders 420 and 421 are connected to the voltage generation driver 460 (X), and the row selection decoders 410 and 411 are connected to the voltage generation driver 460 (Y).

  The row selection decoder 410 selects a crossbar switch layer by selecting PH0 or PH0 '. The row selection decoder 411 selects the layer of the crossbar switch by selecting PH1 or PH1 '. The row selection decoder 410 and the row selection decoder 411 select a switch cell in the Y direction.

  The column selection decoder 420 selects a crossbar switch layer by selecting PL0 or PL0 '. The column selection decoder 421 selects a crossbar switch layer by selecting PL1 or PL1 '. The column selection decoder 420 and the column selection decoder 421 select a switch cell in the X direction.

  The selector 440 selects the layer of the crossbar switch by selecting IN0 or IN0 'based on a signal that can select the switch cell having the correct on / off from the selection line (SL). Similarly, the selector 441 selects a crossbar switch layer by selecting IN1 or IN1 '.

  The selector 450 selects the layer of the crossbar switch by selecting OUT0 or OUT0 'based on a signal that can select the switch cell having the correct on / off from the selection line (SL). Similarly, the selector 451 selects the crossbar switch layer by selecting OUT1 or OUT1 '.

  A case where the switch cell 400 is programmed from the off state to the on state will be described. Hereinafter, the high potential state is “HIGH” and the low potential state is “LOW”. “HIGH” can be a potential higher than the operating potential of the transistor, and “LOW” can be a ground potential.

First, the resistance change element between C00 and X00 is programmed from the off state to the on state by the following procedure.
(1) By setting PGV0 to “HIGH” and PGV1 to “LOW”, the control line selection transistor 430 is turned on, the control line selection transistor 431 is turned off, and “HIGH” is set to the column selection decoder 420. input.
(2) By setting PGH0 to “HIGH” and PGH1 to “LOW”, the selection transistor T00 related to the switch cell 400 is turned on, and “HIGH” is input to the row selection decoder 410.
(3) PL0 is selected by the column selection decoder 420 based on the signal on the selection line SL and the signal on PGV0, and the ground potential is applied to the DX line and PL0 by the voltage generation driver 460. PL0 ′, PL1, and PL1 ′ are not selected and opened.
(4) The voltage generation driver 460 applies a program voltage V _SET for programming the variable resistance element from the off state to the on state to the DC line. Since the control line selection transistor 430 and the selection transistor T00 are in the on state, V _SET is applied to C00. At the same time, the row selection decoder 410 selects PH0 based on the signals of PGH0 and the selection line SL. Further, when DY is opened by the voltage generation driver 460, Y00 is opened. By the above operation, a potential difference of V _SET is generated between C00 and X00 (C00 is a positive high potential), a potential difference of about ½ V _SET is generated between C00 and Y00, and between C00 and X00. The resistance change switch is programmed from the off state to the on state.

Next, the variable resistance element between C00 and Y00 is programmed from the off state to the on state by the following procedure.
(1) By setting PGV0 to “HIGH” and PGV1 to “LOW”, the control line selection transistor 430 is turned on, the control line selection transistor 431 is turned off, and “HIGH” is set to the column selection decoder 420. input.
(2) By setting PGH0 to “HIGH” and PGH1 to “LOW”, the selection transistor T00 related to the switch cell 400 is turned on, and “HIGH” is input to the row selection decoder 410.
(3) PL0 is selected by the column selection decoder 420 based on the signal on the selection line SL and the signal on PGV0, and the DX line and PL0 are opened by the voltage generation driver 460. PL0 ′, PL1, and PL1 ′ are also not selected and opened.
(4) The program voltage V _SET is applied to the DC line by the voltage generation driver 460. Since the control line selection transistor 430 and the selection transistor T00 are in the on state, V _SET is applied to C00. At the same time, the row selection decoder 410 selects PH0 based on the signals of PGH0 and the selection line SL. Further, by applying the program voltage V _SET to DY by the PH0 voltage generation driver 460, the potential of Y00 becomes V _SET . By the above operation, a potential difference of V _SET is generated between C00 and Y00 (C00 is a positive high potential), a potential of about ½ V _SET is generated between C00 and X00, and between C00 and Y00. The resistance change switch is programmed from the off state to the on state.

  As described above, when both the resistance change switch between C00 and X00 and the resistance change switch between C00 and Y00 are programmed to the on state, the switch cell 400 is turned on.

Next, the case where the switch cell 400 is programmed from the on state to the off state will be described. First, the variable resistance element between C00 and X00 is programmed from the on state to the off state by the following procedure.
(1) By setting PGV0 to “HIGH” and PGV1 to “LOW”, the control line selection transistor 430 is turned on, the control line selection transistor 431 is turned off, and “HIGH” is set to the column selection decoder 420. input.
(2) By setting PGH0 to “HIGH” and PGH1 to “LOW”, the selection transistor T00 related to the switch cell 400 is turned on, and “HIGH” is input to the row selection decoder 410.
(3) Program voltage for selecting PL0 by the column selection decoder 420 based on the signal on the selection line SL and the signal on PGV0, and further programming the resistance change element from the on state to the off state on the DX line and PL0 by the voltage generation driver 460. Give V _RESET . PL0 ′, PL1, and PL1 ′ are not selected and opened.
(4) A ground potential is applied to the DC line by the voltage generation driver 460. Since the control line selection transistor 430 and the selection transistor T00 are in the on state, the ground potential is applied to C00. At the same time, the row selection decoder 410 selects PH0 based on the signals of PGH0 and the selection line SL. Further, when DY is opened by the voltage generation driver 460, Y00 is opened. By the above operation, a potential difference of V _RESET is generated between C00 and X00 (X00 is a positive high potential), and a potential difference of about ½ V _RESET is generated between C00 and Y00. The resistance change switch is programmed from the on state to the off state.

Next, the variable resistance element between C00 and Y00 is programmed from the on state to the off state by the following procedure.
(1) By setting PGV0 to “HIGH” and PGV1 to “LOW”, the control line selection transistor 430 is turned on, the control line selection transistor 431 is turned off, and “HIGH” is set to the column selection decoder 420. input.
(2) By setting PGH0 to “HIGH” and PGH1 to “LOW”, the selection transistor T00 related to the switch cell 400 is turned on, and “HIGH” is input to the row selection decoder 410.
(3) PL0 is selected by the column selection decoder 420 based on the signal on the selection line SL and the signal on PGV0, and the DX line and PL0 are opened by the voltage generation driver 460. PL0 ′, PL1, and PL1 ′ are also not selected and opened.
(4) A ground potential is applied to the DC line by the voltage generation driver 460. Since the control line selection transistor 430 and the selection transistor T00 are in the on state, the ground potential is applied to C00. At the same time, the row selection decoder 410 selects PH0 based on the signals of PGH0 and the selection line SL. Further, by applying the program voltage V _RESET to DY by the voltage generation driver 460, the potential of Y00 becomes V _RESET . By the above operation, a potential difference of V _RESET is generated between C00 and Y00 (Y00 is a positive high potential), and a potential difference of about ½ V _RESET is generated between C00 and X00. The resistance change switch is programmed from the on state to the off state.

  As described above, when both the resistance change switch between C00 and X00 and the resistance change switch between C00 and Y00 are programmed to the off state, the switch cell 400 is turned off.

  FIG. 5 is a cross-sectional view showing a part of the device structure of the crossbar switch circuit of this embodiment. The crossbar switch can be formed in a multilayer copper wiring on a silicon substrate on which a transistor is formed. 5 corresponds to the complementary resistance change switch included in the first switch cell 213 of the first crossbar switch 21 shown in FIG. 2A. The complementary resistance change switch 510 corresponds to a complementary resistance change switch included in the second switch cell 223 of the second crossbar switch 22.

  The complementary resistance change switch 500 is formed across the first copper wiring layer 550 and the second copper wiring layer 560. The complementary resistance change switch 510 is formed across the second copper wiring layer 560 and the third copper wiring layer 570.

  The complementary resistance change switch 500 includes a copper wiring 501 and a copper wiring 502 serving as active electrodes, a resistance change layer 503, and an upper electrode 504 serving as an indifferent electrode. The upper electrode 504 is connected to the via 506, the copper wiring 507, the via 508, and the copper wiring 505. For the resistance change layer 503, a metal oxide such as tantalum oxide, a polymer solid electrolyte, or the like can be used. For the upper electrode 504 to be an indifferent electrode, a laminated film of tantalum and ruthenium can be used.

  The resistance change layer 503 is in contact with the copper electrodes 501 and 502 at the opening of the protective film 509 containing silicon oxide or the like. The copper wiring 501, the resistance change layer 503 and the upper electrode 504 constitute one resistance change switch, and the copper wiring 502, the resistance change layer 503 and the upper electrode 504 constitute the other resistance change switch. Since these two resistance change switches share the upper electrode 504, the complementary resistance change switch 500 is configured.

  Terminals X00, Y00, and C00 in the circuit diagram of FIG. 4A correspond to the copper wiring 501, the copper wiring 502, and the copper wiring 505 (via the via 506, the copper wiring 507, and the via 508), respectively. Further, the copper wiring 505 serving as the common terminal C00 also corresponds to the terminal C00 of the complementary resistance change switch 510 via the copper wiring 507 and the via 508. Similar to the complementary resistance change switch 500, the complementary resistance change switch 510 can be formed across the second copper wiring layer 560 and the third copper wiring layer 570.

  For example, the copper wiring 501 and the copper wiring 502 can be connected to copper wirings provided in different copper wiring layers (not shown) through vias to form an array configuration that intersects in plan view. .

  As described above, in the crossbar switch circuit 2, the selector 25 and the selector 26 are connected to the input lines (first and second input lines 211 and 221) to be connected and the output lines (first and second output lines 212, 222), the input line and the output line connected to the switch cell in which the switch cells (the first and second switch cells 213 and 223) connected to the switch cell are ON are respectively selected. Further, the selector 25 and the selector 26 do not select an input line and an output line connected to a switch cell in which a switch cell connected to an input line and an output line that should not be connected is ON. Further, when both the selector 25 and the selector 26 are provided, the selector 25 and the selector 26 select the same crossbar switch input line and output line, respectively.

  As described above, according to the crossbar switch circuit 2, even if there is an error in the ON / OFF state of the switch cell of a certain crossbar switch, the input line and output line connected to the switch cell having the correct ON state of another crossbar switch Can be selected. Thereby, the signal of the input line can be guided to the correct output line.

  The present embodiment is not limited to the crossbar switch circuit, and may be various switch circuits having multiple inputs and multiple outputs, or one input and multiple outputs, or multiple inputs and one output.

As described above, according to the present embodiment, it is possible to provide a switch circuit such as a highly reliable crossbar switch that can realize the connection between the input line and the output line.
(Third embodiment)
FIG. 6 is a diagram showing a configuration of a crossbar switch circuit 6 which is a switch circuit according to a third embodiment of the present invention. The crossbar switch circuit 6 includes a first crossbar switch 61, a second crossbar switch 62, a third crossbar switch 63, a selector 66, a majority logic circuit 67, and a selection line 68. The first crossbar switch 61, the second crossbar switch 62, and the third crossbar switch 63 overlap each other so that switch cells at the same address of the switch cells included in each switch face each other. The number of layers of the crossbar switch is not limited to 3, but may be an odd number of 3 or more.

  The crossbar switch circuit 6 of this embodiment is different from the crossbar switch circuit 2 of the second embodiment in that the crossbar switch circuit 6 has a majority logic circuit 67 that also has a selector function, and the number of layers of the crossbar switch is different. It is an odd number of 3 or more. Other configurations are the same as those of the crossbar switch circuit 2 of the second embodiment.

  The first crossbar switch 61 includes a first input line 611 extending in substantially the same direction in the plane, and a first output line 612 that intersects these in a plan view and extends in the same direction in the same plane. Have Further, a first switch cell 613 is provided at each intersection of the first input line and the first output line in plan view and turns on / off the connection between the first input line and the first output line. Have

  The second crossbar switch 62 includes a second input line 621 extending in substantially the same direction in the plane, and a second output line 622 that intersects these in a plan view and extends in the same direction in the same plane. Have Further, a second switch cell 623 is provided at each intersection of the second input line and the second output line in plan view and turns on / off the connection between the second input line and the second output line. Have

  The third crossbar switch 63 includes a third input line 631 that extends in substantially the same direction in the plane, and a third output line 632 that intersects these in a plan view and extends in the same direction in the same plane. Have Further, a third switch cell 633 is provided at each intersection of the third input line and the third output line in plan view and turns on / off the connection between the third input line and the third output line. Have

  The selector 66 is provided for each pair of the first input line 611, the second input line 621, and the third input line 631 in the same order of each crossbar switch. The incoming line 64 is connected to the first input line 611, the second input line 621, or the third input line 631 selected by the selector 66.

  The majority logic circuit 67 is provided for each set of the first output line 612, the second output line 622, and the third output line 632 in the same order of each crossbar switch. The output line 65 is connected to the first output line 612, the second output line 622, or the third output line 632 selected by the majority logic circuit 67.

  The selector 66 and the majority logic circuit 67 include a first input line 611 and a first output line 612, a second input line 621 and a second output line 622, or a third input line 623. One of the third output lines 623 is selected. At this time, the selector 66 and the majority logic circuit 67 can select the set as described above by sharing the selection information via the selection line 68.

  The selector 66 and the majority logic circuit 67 first designate a set of the first input line 611 and the first output line 612 of the first crossbar switch 61, and the signal from the first input line 611 is designated by this designation. It is determined whether the majority logic circuit 67 is reached via the first output line 612. In FIG. 6, since the first switch cell 613 is on (●), the majority logic circuit 67 can receive a signal. The same applies to the combination of the second input line 621 and the second output line 622 of the second crossbar switch 62 and the combination of the third input line 631 and the third output line 632 of the third crossbar switch 63. And repeat. In FIG. 6, it is assumed that the correct ON / OFF state of the first switch cell 613, the second switch cell 623, and the third switch cell 633 is ON (●).

  The majority logic circuit 67 determines whether there are many ons (●) or many offs (◯) based on the result of the above repetition. FIG. 7 shows a truth table in this majority vote. Based on this truth table, the majority logic circuit 67 selects the output line of the crossbar switch having the switch cell in the larger state. That is, in FIG. 6, since there are many ON (●), the first output line 612 or the third output line 632 is selected. Here, for example, if priority is given to the crossbar switch in the previous order in advance, the majority logic circuit 67 selects the first output line 612. Next, the majority logic circuit 67 notifies the selector 66 via the selection line 68 that the first output line 612 has been selected. Upon receiving this notification, the selector 66 selects the first input line 611 of the first crossbar switch 61 that is the same as the first output line 612.

  Note that the selector 66 and the majority logic circuit 67 can select a plurality of pairs of input lines and output lines to be connected to the switch cells that are majority in the majority, as described above.

  As described above, the selector 66 and the majority logic circuit 67 are configured so that even if the second switch cell 623 of the second crossbar switch 62 is erroneous due to the majority, the input line of the crossbar switch having the correct switch cell is turned on. A set of output lines can be selected.

  In the case of a complementary resistance change switch, if the majority due to the majority of the switch cells is in the wrong on / off state, it is rare due to the high reliability of the switch, so the above decision by majority is effective. is there.

  FIG. 8 is a cross-sectional view showing a part of the device structure of the crossbar switch circuit of this embodiment. The crossbar switch can be formed in a multilayer copper wiring on a silicon substrate on which a transistor is formed. 8 corresponds to the complementary resistance change switch included in the first switch cell 613 of the first crossbar switch 61 shown in FIG. The complementary resistance change switch 810 corresponds to a complementary resistance change switch included in the second switch cell 623 of the second crossbar switch 62. The complementary resistance change switch 820 corresponds to a complementary resistance change switch included in the third switch cell 633 of the third crossbar switch 63.

  The complementary resistance change switch 800 is formed across the first copper wiring layer 850 and the second copper wiring layer 860. The complementary resistance change switch 810 is formed across the second copper wiring layer 860 and the third copper wiring layer 870. The complementary resistance change switch 820 is formed across the third copper wiring layer 760 and the fourth copper wiring layer 880.

  The complementary resistance change switch 800 includes a copper wiring 801 and a copper wiring 802 that are active electrodes, a resistance change layer 803, and an upper electrode 804 that is an indifferent electrode. The upper electrode 804 is connected to the via 806, the copper wiring 807, the via 808, and the copper wiring 805. For the resistance change layer 803, a metal oxide such as tantalum oxide, a polymer solid electrolyte, or the like can be used. For the upper electrode 804 to be an indifferent electrode, a laminated film of tantalum and ruthenium can be used.

  The resistance change layer 803 is in contact with the copper electrodes 801 and 802 at the opening of the protective film 809 containing silicon oxide or the like. The copper wiring 801, the resistance change layer 803, and the upper electrode 804 constitute one resistance change switch, and the copper wiring 802, the resistance change layer 803, and the upper electrode 804 constitute the other resistance change switch. Since these two resistance change switches share the upper electrode 804, a complementary resistance change switch 800 is configured.

  Similar to the complementary resistance change switch 800, the complementary resistance change switch 810 extends over the second copper wiring layer 860 and the third copper wiring layer 870, and the complementary resistance change switch 820 is connected with the third copper wiring layer 760. Each layer can be formed over the fourth copper wiring layer 880.

  As described above, in the crossbar switch circuit 6, the selector 66 and the majority logic circuit 67 are connected to each of the input lines connected to the selector 67 and each of the output lines connected to the majority logic circuit 67 (the first cell). To the third switch cells 613 to 633). As a result, when ON is more than OFF, the selector 66 and the majority logic circuit 67 respectively select an input line and an output line connected to the switch cell that is ON. Further, when OFF is more than ON, the selector 66 and the majority logic circuit 67 do not select the input line and the output line connected to the switch cell that is ON. Further, the selector 66 and the majority logic circuit 67 respectively select the input line and the output line of the same crossbar switch.

  As described above, according to the crossbar switch circuit 6, even if there is an error in the ON / OFF state of the switch cell of a certain crossbar switch, the input line and output line connected to the switch cell having the correct ON state of another crossbar switch Can be selected. Thereby, the signal of the input line can be guided to the correct output line.

  The present embodiment is not limited to the crossbar switch circuit, and may be various switch circuits having multiple inputs and multiple outputs, or one input and multiple outputs, or multiple inputs and one output.

  As described above, according to the present embodiment, it is possible to provide a switch circuit such as a highly reliable crossbar switch that can realize the desired connection between the input line and the output line.

  The present invention is not limited to the above embodiment, and various modifications are possible within the scope of the invention described in the claims, and these are also included in the scope of the present invention.

Moreover, although a part or all of said embodiment may be described also as the following additional remarks, it is not restricted to the following.
(Appendix 1)
An input line, an output line, and a switch element that is connected to the input line and the output line to enable signal transmission by the input line and the output line, and the number of the input lines is A plurality of changeover switches that are equal to each other and have the same number of output lines;
A first selector that selects the input line, and a second selector that selects the output line, among the plurality of changeover switches, and
Each of the input lines of the changeover switch is connected to the different first selector, and each of the output lines is connected to the different second selector,
The first selector and the second selector respectively select the input line and the output line connected to the switch element in which the switch element connected to the input line and the output line to be connected is ON. The switch element connected to the input line and the output line that should not be connected does not select the input line and the output line connected to the switch element,
When both the first selector and the second selector are included, the first selector and the second selector respectively select the input line and the output line of the same changeover switch.
(Appendix 2)
The switch circuit according to appendix 1, wherein the input line and the output line to be connected are specified based on predetermined setting information of on / off of the switch element.
(Appendix 3)
The changeover switch is an odd number,
The input line to be connected and the output line are connected to the input line connected to the first selector and the switch element connected to the output line connected to the second selector is turned off. The switch circuit according to appendix 1, wherein the switch circuit is specified by the input line and the output line connected to the switch element that is turned on when there are many.
(Appendix 4)
A detector for monitoring an output signal for each output line to detect on / off of the switch element connected to the output line and providing the detection result to the first selector and the second selector; The switch circuit according to one of items 1 to 3, wherein:
(Appendix 5)
The switch circuit according to appendix 4, wherein at least one of the first selector and the second selector includes the detector.
(Appendix 6)
The input line extends in a first direction in the plane;
The output line extends in a second direction within a plane substantially parallel to the plane and intersects the input line in plan view;
6. The switch circuit according to claim 1, wherein the switch element is provided at each intersection of the input line and the output line in plan view.
(Appendix 7)
7. The switch circuit according to one of appendices 1 to 6, wherein the switch element includes a resistance change element.
(Appendix 8)
The switch element includes a selection transistor, the variable resistance element includes a first electrode, a second electrode, and a third electrode, the first electrode is connected to the input line, and the second electrode The switch circuit according to appendix 7, wherein is connected to the output line, and a third electrode is connected to the selection transistor.
(Appendix 9)
The switch circuit according to appendix 8, wherein the selection transistor is shared between the changeover switches.
(Appendix 10)
The variable resistance element includes variable resistance layers between the first electrode and the third electrode, and between the second electrode and the third electrode, respectively, The second electrode is an active electrode and the third electrode is an indifferent electrode, or the first electrode and the second electrode are indifferent electrodes and the third electrode is an active electrode. 9. The switch circuit according to 9.
(Appendix 11)
A first wiring layer, a second wiring layer, and a third wiring layer are provided in order from the substrate surface side, and the first change-over switch among the plurality of change-over switches includes the first wiring layer and the first wiring layer. 11. The one of Supplementary Notes 1 to 10, wherein the second changeover switch that exists in the second wiring layer and overlaps the first changeover switch exists in the second wiring layer and the third wiring layer. Switch circuit.
(Appendix 12)
The switch circuit according to appendix 11, wherein the first wiring layer, the second wiring layer, and the third wiring layer have copper wiring.
(Appendix 13)
13. A semiconductor device having the switch circuit according to one of appendices 1 to 12.

DESCRIPTION OF SYMBOLS 1 Switch circuit 11 Input line 12 Output line 13 Switch element 14 Changeover switch 15 1st selector 16 2nd selector 2, 6 Crossbar switch circuit 21, 61 1st crossbar switch 22, 62 2nd crossbar switch 63 3rd Crossbar switch 23, 64 In-line 24, 65 Out-line 25, 26, 66 Selector 27 Information provider 67 Majority logic circuit 211, 611 First input line 221, 621 Second input line 631 Third input line 212, 612 First output line 222, 622 Second output line 632 Third output line 213, 613 First switch cell 223, 623 Second switch cell 633 Third switch cell 68 Selection line 3, 9 Resistance change Switch 31, 91 Resistance change layer 30, 90 Complementary resistance change switch 32, 92 Electrode 33, 93 Indifferent electrode 300, 900 Switch cell 301 Input line 302 Output line 303 Control line 304 Selection transistor 400 Switch cell 410, 411 Row selection decoder 420, 421 Column selection decoder 430, 431 Control line selection transistor 440, 441, 450, 451 Selector 460 Voltage generation driver 500, 510, 800, 810, 820 Complementary resistance change switch 501, 502, 505, 507, 801, 802, 805, 807 Copper wiring 503, 803 Resistance change layer 504, 804 Upper electrode 506, 508, 806, 808 Via 509, 809 Protective film 550, 850 First copper wiring layer 560, 860 Second copper wiring layer 570, 870 Third copper wiring layer 880 Fourth copper wiring layer 1000, 1001 , 1002 , 1003 switch cell 1005 voltage generation driver 1010, 1011 row selection transistor 1020, 1021 column selection transistor 1030, 1031 control line selection transistor 1040, 1041 input line 1050, 1051 output line 1060, 1061 control line 1100 complementary resistance change switch 1101a first 1 resistance change switch 1101b second resistance change switch 1102 first interlayer insulating film 1103a, 1103b first copper wiring 1104a, 1104b first barrier metal 1105 first barrier insulating film 1106 resistance changing film 1107 upper electrode 1108 second interlayer insulating film Film 1109 Second barrier metal 1110 Plug 1111 Second copper wiring 1112 Second barrier insulating film

Claims (10)

An input line, an output line, and a switch element that is connected to the input line and the output line to enable signal transmission by the input line and the output line, and the number of the input lines is A plurality of changeover switches that are equal to each other and have the same number of output lines;
A first selector that selects the input line, and a second selector that selects the output line, among the plurality of changeover switches, and
Each of the input lines of the changeover switch is connected to the different first selector, and each of the output lines is connected to the different second selector,
The first selector and the second selector respectively select the input line and the output line connected to the switch element in which the switch element connected to the input line and the output line to be connected is ON. The switch element connected to the input line and the output line that should not be connected does not select the input line and the output line connected to the switch element,
When both the first selector and the second selector are included, the first selector and the second selector respectively select the input line and the output line of the same changeover switch.   The switch circuit according to claim 1, wherein the input line and the output line to be connected are specified based on predetermined setting information of ON / OFF of the switch element. The changeover switch is an odd number,
The input line to be connected and the output line are connected to the input line connected to the first selector and the switch element connected to the output line connected to the second selector is turned off. The switch circuit according to claim 1, wherein the switch circuit is specified by the input line and the output line connected to the switch element that is turned on when there are many.   A detector for monitoring an output signal for each output line to detect on / off of the switch element connected to the output line and providing the detection result to the first selector and the second selector; 4. The switch circuit according to claim 1, wherein: The input line extends in a first direction in the plane;
The output line extends in a second direction within a plane substantially parallel to the plane and intersects the input line in plan view;
5. The switch circuit according to claim 1, wherein the switch element is provided at each intersection of the input line and the output line in plan view.   The switch circuit according to claim 1, wherein the switch element includes a resistance change element.   The switch element includes a selection transistor, the variable resistance element includes a first electrode, a second electrode, and a third electrode, the first electrode is connected to the input line, and the second electrode Is connected to the output line, and a third electrode is connected to the selection transistor.   The switch circuit according to claim 7, wherein the selection transistor is shared between the changeover switches.   A first wiring layer, a second wiring layer, and a third wiring layer are provided in order from the substrate surface side, and the first change-over switch among the plurality of change-over switches includes the first wiring layer and the first wiring layer. 1. The one of claim 1, wherein the second changeover switch that exists in the second wiring layer and overlaps the first changeover switch exists in the second wiring layer and the third wiring layer. The switch circuit described.   A semiconductor device comprising the switch circuit according to claim 1.

Images