JP2017536696A - Multilayer board - Google Patents

Abstract

The present disclosure relates generally to high-speed fiber optic networks that transmit data over a network using optical signals. The disclosed subject matter includes devices and methods relating to header sub-assemblies and / or optoelectronic sub-assemblies. In some aspects, the disclosed devices and methods include a bottom layer, a top layer having a top thin film signal line, and one or more intermediate layers having a thick film trace between the top layer and the bottom layer. Wherein the thick film trace is disposed on the multilayer substrate and electrically coupled to the signal line, the multilayer substrate having one or more intermediate layers electrically coupled to the top thin film signal line. And an optoelectronic component.

Description

  The present disclosure relates to high-speed optical fiber networks that transmit data over a network using optical signals.

  Fiber optic networks have various advantages over other types of networks, such as copper-based networks. Many existing copper networks operate at approximately the maximum possible data rate and approximately the maximum possible distance of copper technology. Fiber optic networks can reliably transmit data at higher speeds over longer distances than is possible with copper networks.

  The claimed subject matter is not limited to configurations that solve any disadvantages or that operate only in environments such as those described above. This background art is provided merely to illustrate examples in which the present disclosure may be used.

  It is an object of the present invention to provide an improved optoelectronic subassembly with respect to the optical fiber network described above.

  In one example, the header subassembly is a bottom layer, a top layer having a top thin film signal line, and one or more intermediate layers having thick film traces between the top layer and the bottom layer, The thick film trace includes a multilayer substrate having an intermediate layer electrically coupled to the top thin film signal line, and an optoelectronic component disposed on the multilayer substrate and electrically coupled to the signal line. In another example, the header subassembly includes one or more having a bottom layer, a top layer having a top thin film signal line having a first dimensional tolerance, and a thick film trace between the top layer and the bottom layer. An intermediate layer, wherein the thick film trace is electrically coupled to the top thin film signal line, and the thick film trace has a second dimensional tolerance greater than the first dimensional tolerance. A multilayer substrate; and an optoelectronic component disposed on the multilayer substrate and electrically coupled to the signal line.

  In yet another example, the method includes forming a material layer that includes a top material layer, a bottom material layer, and an intermediate material layer, and a thick film trace by thick film metallization on at least one of the material layers. And forming a thin film signal line by thin film metallization on at least one of the material layers.

  In a further example, the method includes forming a multi-layer substrate including forming a bottom layer, a top layer, and an intermediate layer, and forming a thick film trace by at least one of the intermediate layers by thick film metallization. Forming a thin film signal line on the top layer by thin film metallization, and coupling one or more optoelectronic components to the multilayer substrate, wherein the optoelectronic components transmit or receive optical signals. And a step configured to.

  This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This summary is intended to identify key features or essential characteristics of the subject matter disclosed, but is intended to be used as an aid in determining the scope of the claims. not. Additional features and advantages will be set forth in the description that follows, and in part will be apparent from the description, or may be learned by practice.

1 is a perspective view of an exemplary optoelectronic subassembly. FIG. 1B is a cross-sectional side view of the optoelectronic subassembly of FIG. 1A. FIG. 2 is a top perspective view of a header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 2 is a bottom perspective view of the header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 1B is a side view of the header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 1B is a top view of the header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 1B is a bottom view of the header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 1B is an exploded perspective view of a header subassembly of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 2 is a top perspective view of an optical component of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 1B is a bottom perspective view of an optical component of the optoelectronic subassembly of FIGS. 1A-1B. FIG. 2 is a cross-sectional perspective view of an optical component of the optoelectronic subassembly of FIGS. 1A-1B. FIG.

  Various aspects of the disclosure are described using specific language with reference to the drawings. Such use of the drawings and specification should not be construed to limit the scope of the present disclosure. Further embodiments will be apparent from the viewpoint of this disclosure, including the claims, or may be learned by practice.

  The terms and terms used in the following description and claims are not limited to the literature meaning, but are merely used to enable a clear and consistent understanding of the present disclosure. It should be understood that the singular forms “a”, “an” and “the” include plural referents unless the context clearly dictates otherwise. . Thus, for example, reference to “a component surface” includes a reference to one or more such surfaces.

  The term “substantially” is not required to accurately realize the listed properties, parameters or values, for example deviations including tolerances, measurement errors, measurement accuracy limits and other factors known to those skilled in the art. Or it means that the variation can occur in an amount that does not interfere with the effect the property is trying to provide.

  The term “optoelectronic subassembly” is used to refer to any part of the optoelectronic assembly. However, sometimes, in this disclosure, an “optoelectronic subassembly” is used to refer to a particular portion of an optoelectronic assembly, as indicated in the context.

  High speed fiber optic networks use optical signals (also called optical signals) to transmit data over the network. Fiber optic networks have various advantages over other types of networks, such as copper-based networks. Many existing copper networks operate at approximately the maximum possible data rate and approximately the maximum possible distance of copper technology. Fiber optic networks can reliably transmit data at higher speeds over longer distances than is possible with copper networks.

  Fiber optic networks use optical signals to carry data, but many electronic devices such as computers and other network devices use electrical signals. Thus, the optoelectronic assembly may also be used to convert an electrical signal to an optical signal, to convert an optical signal to an electrical signal, or to convert an electrical signal to an optical signal and an optical signal to an electrical signal. Good.

  The optoelectronic assembly includes an optoelectronic subassembly (“OSA”: to the receiver optoelectronic subassembly (“ROSA”), a transmitter optoelectronic subassembly (“OSA”: to the electronic optoelectronic subassembly (“OSA”: to the electronic subassembly). May be included. ROSA receives an optical signal by a photodetector such as a photodiode and converts the optical signal into an electrical signal. The TOSA receives an electrical signal and transmits a corresponding optical signal. A TOSA may include an optical transmitter, such as a laser, that generates light that is transmitted through an optical fiber network. The optoelectronic assembly or subassembly may include various components such as optical components and / or electronic components.

  The optoelectronic assembly or subassembly may include various components such as optical components and / or electronic components. The optical component is responsible for the optical signal, which may be emitted, received, transmitted, transported, focused, and / or collimated, for example. An electrical component is involved in an electrical signal, and an electronic signal is received, transmitted, transported, converted, converted, adjusted and / or amplified, for example. Also good. Optoelectronic components may be responsible for both electrical and optical signals and are referred to as transducer components. The optoelectronic component may convert an optical signal into an electrical signal and / or convert an electrical signal into an optical signal (eg, a diode or a laser).

  Some optoelectronic assemblies may include a plurality of channels (“multi-channel optoelectronic assemblies”), each channel corresponding to a set of one or more optical signals traveling through the optical fiber. Multi-channel optoelectronic assemblies may support increased data rates over fiber optic networks. For example, a four channel optoelectronic assembly may be capable of transmitting and receiving data at a data transfer rate that is approximately four times that of a similar single channel optoelectronic assembly.

  Ferrule assemblies may be used in optical fiber networks to physically and / or optically couple optical fibers with optoelectronic assemblies, optoelectronic subassemblies, optical components and / or electronic components. For example, the ferrule assembly may be used to connect ROSA and / or TOSA to an optical fiber that is part of a fiber optic network, thereby enabling ROSA to receive optical signals and / or Or allows TOSA to transmit optical signals. Additionally or alternatively, the ferrule assembly may form part of an optoelectronic assembly or subassembly configured to transmit or receive electrical or optical signals in a fiber optic network.

  Some optoelectronic assemblies may include a hermetically sealed housing to protect the parts. However, the space within the hermetically sealed housing may be limited, particularly when the optoelectronic assembly complies with small form factor industry standards. In addition, increasing the size of the hermetically sealed housing may increase the manufacturing cost of the optoelectronic assembly. Conversely, reducing the size of the hermetically sealed housing may reduce the manufacturing cost of the optoelectronic assembly.

  The manufacture of some hermetically sealed structures may increase the manufacturing cost of the optoelectronic assembly. In some situations, manufacturing a hermetically sealed structure with a large hermetic seal may be more expensive than manufacturing a hermetically sealed structure with a small hermetic seal. . Some hermetic sealing structures may increase the complexity of the optoelectronic assembly. Additionally or alternatively, some hermetic sealing structures may increase the size of the optoelectronic assembly.

  The optoelectronic assembly must comply with specific standards that specify aspects of the optoelectronic assembly, such as dimensions, power handling, component interfaces, operating wavelengths, or other specifications. Examples of such standards include CFP, XAUI, QSFP, QSFP +, XFP, SFP and GBIC. Compliance with such standards may limit structure, dimensions, cost, performance, or other aspects of optoelectronic assembly design. Such standards may also limit the configuration of components of a hermetically sealed structure, such as an optoelectronic assembly, such as a receptacle that receives a ferrule assembly, and / or a housing.

  In some optoelectronic assemblies, electronic and / or radio frequency signal transmission lines (“RF lines”) may couple laser or other components of the optoelectronic assembly. The electrical performance of the RF line (“RF performance” or “RF response”) can be important to the operation of the optoelectronic assembly. Accurate control and / or reducing RF line dimensions can contribute to optoelectronic assemblies with adequate and / or good RF performance. However, the design and placement of the components of the optoelectronic assembly may prevent the lengthy RF lines from being well controlled and / or minimized. The electrical performance of RF lines can be particularly important for relatively high frequency optoelectronic assemblies such as those operating at 1, 2, 4, 10, 30 gigabits per second (Gb / s) or higher.

  Parts such as optoelectronic subassemblies or portions of optoelectronic subassemblies may be manufactured in large quantities, and the manufactured parts specify various aspects (eg, shape, dimensions, and / or positioning) of the manufactured parts. It is necessary to comply with the specifications. The manufactured part may include specification variations. Some variation in specifications is possible because the part after manufacture is appropriate or functions properly. Some variations in specifications may result in inappropriate parts. Tolerance means an acceptable amount of variation in specifications (eg, dimensions or positioning). Some specifications may have higher (“wider”) or lower (“stricter”) tolerances. For example, the outer dimensions of the optoelectronic subassembly have wider tolerances because the variation cannot affect the operation of the optoelectronic subassembly after manufacture. In another example, positioning of optical components may require tighter tolerances because positioning affects the focusing and / or transmission of optical signals. In yet another example, RF line dimensions may require tighter tolerances because the dimensions can significantly affect RF performance.

  The manufacturing process selected may affect the spread and extent of variation. In some situations, the manufacturing process may be controlled to increase or decrease the range of variation, the frequency of variation, or other aspects. In some situations, manufacturing the part to tighter tolerances may increase manufacturing costs (or vice versa). For example, a tight tolerance manufacturing process may be more expensive than a wide tolerance manufacturing process. Tighter tolerances can result in more unsuitable parts. Inappropriate parts may be discarded without recovering manufacturing costs or being repaired, increasing manufacturing costs. The manufacturing process may be modified to reduce or eliminate the production of inappropriate parts, but in some situations this may increase costs.

  1A-1B illustrate an exemplary optoelectronic subassembly 460. FIG. The optoelectronic subassembly 460 may include an optical component 400 and a header subassembly 420. The optoelectronic subassembly 460 includes a TOSA configured to convert an electrical signal into an optical signal, a ROSA configured to convert an optical signal into an electrical signal, or a TOSA and optical for converting an electrical signal into an optical signal. Both ROSA for converting the signal into an electrical signal may be included.

  The header subassembly 420 can include a multilayer substrate 442 having an intermediate layer 446 disposed between a top layer 440 and a bottom layer 448, with optoelectronic components 428 coupled to or on the multilayer substrate 442. Is formed. Optoelectronic component 428 may be configured to transmit and / or receive optical signals to and / or from the fiber optic network. Additionally or alternatively, optoelectronic component 428 may be configured to convert electrical signals to optical signals and / or convert optical signals to electrical signals.

  The optical component 400 may include a housing 406 that extends between a housing top 416 and a housing bottom 418. The housing 406 may include a window 402, an opening 412 defined by the housing 406, and a lens 404 configured to transmit, direct and / or focus an optical signal. The housing bottom 418 may include a housing flange 414 configured to be coupled with the header subassembly 420. In some configurations, the optical component 400 may hermetically seal a portion of the header subassembly 420.

  FIGS. 2A-2E and 3 show a header subassembly 420 that may be part of the optoelectronic subassembly 460. The header subassembly 420 may include a housing seat 430 configured to be coupled to the housing flange 414. Optoelectronic component 428 may include any suitable component that may be used in an optoelectronic subassembly, such as TOSA, ROSA, and / or other optoelectronic subassemblies. Optoelectronic component 428 may include a driver, monitor photodiode, integrated circuit, inductor, capacitor, receiver, receiver array, control circuit, lens, laser array, or any suitable optoelectronic component. Optoelectronic component 428 may include an optical component 426 such as a prism, lens, mirror, filter, or other suitable component. Some of the optoelectronic components 428 may be electrically coupled to each other by signal lines 438, wire bonds (not shown), or other suitable interconnects. Additionally or alternatively, some of the optoelectronic components 428 may be optically coupled to each other.

  In one configuration, if the optoelectronic subassembly 460 includes TOSA, the optoelectronic component 428 may include a laser 424 or a laser array (eg, if the optoelectronic subassembly 460 is a multi-channel optoelectronic subassembly). In another configuration, if the optoelectronic subassembly 460 includes ROSA, the optoelectronic component 428 may include a receiver or receiver array (eg, if the optoelectronic subassembly 460 is a multi-channel optoelectronic subassembly). In further configurations, the header subassembly 420 may include both TOSA and ROSA, and the optoelectronic component 428 may include components suitable for both TOSA and ROSA.

  As shown, the optoelectronic component 428 may appear discrete, but the optoelectronic component 428 may not be a discrete component. Optoelectronic component 428 may be incorporated between various layers of multilayer substrate 442 and / or printed between layers of multilayer substrate 442. The layers of the multilayer substrate 442 may contribute to capacitance characteristics and / or function as power and ground planes and / or may have a dielectric between the layers of the multilayer substrate 442, thereby providing parallelism. Enables operation as a plate capacitor.

  In a configuration not shown, the optoelectronic subassembly 460 may be configured to be part of a multi-channel optoelectronic assembly. An aspect of the header subassembly 420 is a multichannel laser array configured to transmit and / or receive multiple sets of optical signals (each set of optical signals corresponding to one channel of a multichannel optoelectronic subassembly). And / or precise coupling and / or spacing of signal lines 438, vias 452, and / or traces 432 may be facilitated to electrically couple to the multi-channel receiver array. In some configurations, the optoelectronic subassembly 460 may be a four channel optoelectronic subassembly configured to transmit and / or receive four channels of data. In some aspects, the optoelectronic subassembly 460 may conform to the QSFP standard.

  The aspect of the optoelectronic subassembly 460 can contribute to lower manufacturing costs. For example, some aspects of optoelectronic subassembly 460 simplify the manufacturing process and / or reduce the cost of materials used to manufacture optoelectronic subassembly 460. Some aspects of the optoelectronic subassembly 460 facilitate cost-effective manufacturing of the optoelectronic subassembly 460 with desirable RF performance.

  Aspects of header subassembly 420 (described in further detail below) allow for precise positioning and / or spacing of signal lines 438 and / or optoelectronic components 428. This facilitates the manufacture of a compact optoelectronic subassembly incorporating the header subassembly 420. Additionally or alternatively, precise positioning and / or spacing of the signal lines 438 causes the optoelectronic components 428 to be placed closer to each other so that larger dimensions or a greater quantity of optoelectronic components 428 can be placed An assembly 460 can be included. Aspects of header subassembly 420 facilitate maintaining the integrity of the data signal transmitted over signal line 438, including maintaining the signal impedance within acceptable levels. In one aspect, the impedance is managed by precisely controlling the shape, position and / or dimensions of RF lines, vias 452 and / or traces 432 (eg, see FIG. 3), which may be signal lines 438. May be. The shape, location and / or dimensions of the signal lines 438, vias 452 and / or traces 432 are selected based on the electrical and RF conditions found in the optoelectronic subassembly 460. For example, computer simulations of various designs of signal lines 438, vias 452, and / or traces 432 are performed to identify those that produce acceptable RF performance or RF response.

  The multilayer substrate 442 may include an intermediate layer 446 disposed between the top layer 440 and the bottom layer 448. Each layer of the multilayer substrate 442 may be planar and arranged parallel to each other (but other configurations are also implemented). As shown, the multilayer substrate 442 can include a total of five layers with three intermediate layers 446 between the top layer 440 and the bottom layer 448. However, the multilayer substrate 442 may include any suitable total number of layers or intermediate layers 446. In some configurations, bottom layer 448 refers to a plurality of bottom layers 448 and top layer 440 refers to a plurality of top layers 440. In some situations, the multilayer substrate 442 may include a total of more than ten layers.

  The layers of the multilayer substrate 442 (eg, the bottom layer 448, the intermediate layer 446, and / or the top layer 440) may be formed from any substrate material such as a ceramic material. At least a portion of the multilayer substrate 442 may be formed of a ceramic material. At least a part of the multilayer substrate 442 may be formed of silicon, silicon dioxide, alumina, aluminum nitrate, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, or indium phosphide. Signal lines 438 (only some of which are labeled in the figure for clarity) are electrically coupled to any of the optoelectronic components 428 to transmit power, data signals and / or control signals to the optoelectronic components 428 and / or others. You may send to the parts. Some of the signal lines 438 may be RF lines. In some configurations, the signal line 438 may be coupled to the top layer 440 or integrated with the top layer 440. The signal line 438 may be formed of any suitable conductive material, but in some examples, the signal line 438 includes silver (Ag), gold (Au), nickel (Ni), titanium (Ti), It may be made of metal such as palladium (Pd), tungsten (W), tungsten-molybdenum (WMo), or other materials. The signal line 438 may be formed by any appropriate method. In some aspects, signal line 438 may be formed by a thin film metallization process. In such an aspect, the thin film metallization process allows the RF lines to be controlled and / or minimized to maintain RF performance.

  Conductive material traces 432 (only some of which are labeled for clarity) may be coupled to one or more of intermediate layers 446 or integrated with one or more of intermediate layers 446. Good. Trace 432 may be formed of any suitable conductive material, but in some examples, trace 432 may be silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium ( Pd), tungsten (W), tungsten-molybdenum (WMo), or other materials may be used. Trace 432 may be formed by any suitable method. In some aspects, the trace 432 may be formed by a cost effective process such as a thick film metallization process. In some configurations, trace 432 may be part of signal line 438.

  Header subassembly 420 includes contact pads 444 (only some of which are labeled for clarity in the figure) that can transmit power and / or control signals to header subassembly 420 and / or optoelectronic component 428. May be included. In some configurations, contact pad 444 may be coupled to bottom layer 448 or integrated with bottom layer 448. Contact pad 444 may be capable of engaging a flex circuit, a printed circuit board (“PCB”) or other connector and / or electronic assembly. Contact pad 444 may be formed of any suitable conductive material, but in some examples contact pad 444 may be silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W), tungsten-molybdenum (WMo), or other materials may be used. Contact pad 444 may be formed by any appropriate method. In some aspects, contact pad 444 may be formed by a cost effective process, such as a thick film metallization process. In some configurations, the contact pad 444 may be part of the signal line 438.

  Conductive material vias 452 (only some of which are labeled for clarity) may extend within a portion of multilayer substrate 442. For example, one or more of the vias 452 may extend into one or more of the bottom layer 448, at least one of the intermediate layers 446, and the top layer 440. Some of the vias 452 may be electrically coupled to traces 432, contact pads 444, signal lines 438, and / or optoelectronic components 428. Via 452 allows power and / or control signals to move between trace 432, contact pad 444, signal line 438 and / or optoelectronic component 428.

  In some configurations, vias 452 may be formed on multilayer substrate 442 or coupled to multilayer substrate 442 after some or all of the layers are coupled together. For example, one or more of the layers of the multi-layer substrate 442 may include a conductive material, such as a trace 432 that forms a via 452 when the layers are bonded together. In another example, an opening may be formed in one or more of the layers of the multilayer substrate 442 and a conductive material may be disposed in the opening to form a via 452. The openings may be drilled or punched in one or more layers of the multilayer substrate 442. Thereafter, a conductive material may be deposited or metallized in the opening to form the via 452. The via 452 may be formed of any suitable conductive material, but in some examples, the via 452 may be copper (Cu), silver (Ag), gold (Au), nickel (Ni), titanium ( Ti, palladium (Pd), tungsten (W), tungsten-molybdenum (WMo), or other materials may be used. In some configurations, via 452 may be part of signal line 438.

  With reference to FIGS. 1A to 1B, FIGS. 2A to 2E, and FIG. The process aspects described can be applied to other structures that are similar or substantially different from the illustrated figures. Forming the multilayer substrate 442 may include forming a material layer of a ceramic material. The material layer may be formed by any suitable process or combination of processes. Some or all of the material layers may be formed of silicon, silicon dioxide, alumina, aluminum nitrate, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, or indium phosphide.

  Each of the material layers may be planar and may correspond to a layer of the multilayer substrate 442. In particular, the top material layer may correspond to the top layer 440, the bottom material layer may correspond to the bottom layer 448 and / or the intermediate material layer may correspond to the intermediate layer 446. In some situations, the top material layer and / or the bottom material layer may be formed by a different process than the intermediate material layer.

  As will be described in more detail below, each of the material layers may eventually be diced or cut into individual units. In some situations, multiple multilayer substrates are formed from a material layer, so performing certain processing steps (described below) on the material layer before the material layer is separated can reduce the cost of the multilayer substrate 442. Highly effective and / or efficient manufacturing can be facilitated. Performing certain processing steps on the material layers rather than the layers of the multilayer substrate 442 may simplify the manufacturing process, reduce material costs, and / or reduce manufacturing time frames. May be.

  In some configurations, thick film metallization may be used to form traces 432 on intermediate layer 446 and thin film metallization uses signal lines 438 on top layer 440 and / or bottom layer 448. It may be used to form. Thick film metallization and thin film metallization are described in further detail below. Thin film metallization allows precise positioning and / or spacing of signal lines 438 and / or optoelectronic components 428. Thin film metallization may facilitate impedance management by controlling the shape, position and / or dimensions of signal lines 438 to tight tolerances. Thick film metallization may facilitate cost effective manufacturing of intermediate layer 446 and / or header subassembly 420. In some aspects, thick film processing facilitates simple and flexible fabrication of multilayers having several conductive layers on several front and / or back sides of the layer. The combination of thin film metallization and thick film metallization may facilitate cost-effective manufacturing of optoelectronic subassembly 460 with desirable RF performance. The combination of thin film metallization and thick film metallization allows more or larger optoelectronic components 428 to be included on the optoelectronic subassembly 460.

  Forming the multilayer substrate 442 may include forming conductive or semiconductive traces by thick film metallization (“thick film metalizing”). Thick film metalizing may form conductive or semiconductive traces such as trace 432 on intermediate layer 446. In some situations, contact pads 444 may be formed by thick film metalizing. In some configurations, conductive or semiconductive traces may be formed on top layer 440 and bottom layer 448 by thick film metallization. In other configurations, thick film metalizing may not be used to form conductive or semiconductive traces on top layer 440 and bottom layer 448. A layer that has undergone thick film metallization is called a thick film layer. Conductive or semiconductive traces may be formed on either the top or bottom surface of the thick film layer. Any of the steps of thick film metalizing (described below) may be applied to the upper surface of the thick film layer, the lower surface of the thick film layer, or both.

  Thick film metallizing may include depositing the metallizing composition on a thick film layer, such as one or more of the intermediate material layers or one or more of the intermediate layers 446. The metallizing composition may be deposited by any suitable process, such as printing or coating. Examples of suitable printing processes include screen printing, rotary printing, press printing and / or ink jet printing. Metallizing compositions include conductive or semiconductive materials such as metallic materials, ceramic powders and / or organic media. In some configurations, the metallizing composition includes copper (Cu), silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W), tungsten- Molybdenum (WMo) or other materials may be mentioned.

  Screen printing may include positioning a stencil on or on the thick film layer. The portion of the thick film layer covered by the stencil can be referred to as the covered portion, and the portion of the thick film layer not covered by the stencil can be referred to as the uncovered portion. Screen printing may include moving the filling blade or squeegee across the stencil and / or thick film layer. Screen printing may include depositing the metalizing composition on the uncoated portion of the thick film layer. Screen printing may include depositing the metalizing composition on the stencil on the coated portion of the thick film layer (and thus not depositing the metalizing composition on the coated portion of the thick film layer). Screen printing of the metalizing composition may include repeating any of the above screen printing steps for multiple layers of the metalizing composition. In some configurations, each layer of the plurality of layers of the metallizing composition may include a different composition.

  Thick film metallizing may include drying and / or curing. Drying and / or curing may include stabilizing the metallizing composition for some time after printing. Drying and / or curing may include evaporating the liquid component of the metalizing composition. By evaporating the liquid component of the metallizing composition, the metallizing composition is bonded to the substrate or facilitates bonding of the metallizing composition to the substrate. Drying and / or curing may include heating the metallizing composition and / or the thick film layer to promote and / or accelerate evaporation. Drying and / or curing may include heating the metallizing composition and / or the thick film layer to bond the metallizing composition to the substrate or to promote bonding of the metallizing composition to the substrate. Drying and / or curing induces the metallizing composition to a specific wavelength of light (eg, ultraviolet light) or other radiation (radiation is energy transmitted in the form of lines or waves or particles) and / or Or it may include exposing. Drying and / or curing changes (or contributes to) the metallizing composition to conductive or semiconductive traces such as trace 432.

  Thick film metallizing may include firing the metallizing composition and / or the thick film layer. Baking includes exposing the metalizing composition and / or thick film layer to a high temperature for a period of time. In addition to or in lieu of drying and / or curing, calcination changes the metallizing composition to a conductive or semiconductive trace such as trace 432 (or contributes to the change). Firing may include sintering, bonding and / or annealing of the metallizing composition and / or thick film layer.

  The elevated temperature can be any suitable temperature and depends on the various properties of the metallizing composition and / or thick film layer. For example, the high temperature depends on the composition, dimensions and / or other properties of the metallizing composition and / or thick film layer. The high temperature also depends on various aspects of the firing process, such as pressure, exposure time and / or other aspects. The high temperature is above 300 ° C., for example in the range of 600 ° C. to 1800 ° C. In some configurations, the elevated temperature is in the range of about 850 ° C, such as 650 ° C to 1050 ° C. In such a configuration, high temperatures can contribute to the formation of traces 432 having desirable electrical properties and / or adhesive strength.

  Thick film metalizing may include removing material such as a portion of the thick film layer, a portion of the metalizing composition, and / or a portion of trace 432. Removing may include machining, cutting, etching, trimming and / or other suitable processes. Trimming may include removing a portion of trace 432 to adjust the size of the metallizing composition and / or adjust the electrical characteristics of trace 432. For example, a portion of trace 432 may be removed by laser trimming so that the trace has a particular resistance, voltage response, frequency response, tolerance, and / or other characteristics. Trimming activates a portion of trace 432 to pass current through trace 432, measure feedback from trace 432, and / or adjust resistance, voltage response, frequency response, tolerances, and / or other characteristics. May be included.

  In some examples, thick film metallization can produce traces having height tolerances greater than 0.13 millimeters (plus or minus). In some examples, thick film metallization may produce traces having a width of about 0.15 millimeters and / or a tolerance greater than 0.13 millimeters (plus or minus). In some examples, thick film metallization can produce traces having widths of 0.10-0.20 millimeters, 0.05-0.25 millimeters, 0-0.3 millimeters. In some examples, thick film metallization may produce traces having an inter-trace spacing of 0.15 millimeters and / or a tolerance greater than 0.13 millimeters (plus or minus).

  Forming the multilayer substrate 442 may include forming conductive or semiconductive signal lines by thin film metallization (“thin film metallizing”). Thin film metallization may form conductive or semiconductive signal lines such as signal lines 438 on top layer 440 and bottom layer 448. Although not shown, the signal line 438 may be disposed on the bottom layer 448. In some situations, thin film metallization may form contact pads 444. In some configurations, thin film metalizing may not be used to form conductive or semiconductive traces on the intermediate layer 446. A layer that has undergone thin film metallization is called a thin film layer. Conductive or semiconductive traces may be formed on either the top or bottom surface of the thin film layer. In some situations, the signal line 438 may be disposed on the top surface of the top layer 440 for electrical coupling to the optoelectronic component 428. Any of the thin film metalizing (described below) steps may be applied to the upper surface of the thin film layer, the lower surface of the thin film layer, or both.

  Thin film metallizing may include depositing a thin film of a conductive or semiconductive material ("thin film material") on the thin film layer. Thin film materials include copper (Cu), silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W), tungsten-molybdenum (WMo) or other materials. May be included. To deposit, any process for depositing a thin film of material, such as plating, chemical solution deposition, spin coating, chemical vapor deposition (“CVD”), plasma CVD, atomic layer deposition, thermal evaporation, sputtering Or other suitable processes.

  In some situations, deposition by chemical vapor deposition (“CVD”) may cause the dimensions of signal lines 438 (eg, height, stackup height, metallization width, spacing between signal lines 438, or others. ) Can be accurately controlled within acceptable tolerances. In some situations, depositing by chemical vapor deposition allows cost-effective manufacturing of sufficiently dimensioned and tolerance signal lines 438.

  CVD may include exposing the thin film layer to a precursor gas. The precursor gas may include elements that are deposited to form a conductive or semiconductive material on the thin film layer. The precursor gas may be a volatile precursor that reacts and / or decomposes on the surface of the thin film layer to produce a deposit. The precursor gas may be diluted in a carrier gas. CVD may include heating the thin film layer and / or controlling the temperature of the thin film layer. CVD may include delivering a precursor gas into the reaction chamber at approximately ambient temperature. The precursor gas may react or decompose as it passes over or contacts the thin film layer, forming a solid deposit on the thin film layer, for example, forming a signal line 438. Thin film metallization may include drying, curing, firing and / or other suitable processing steps.

  Thin film metallization may include removing a portion of the deposit, signal line 438 and / or a portion of the thin film layer. Removing may include machining, cutting, etching, trimming and / or other suitable processes. Trimming may include removing a portion of the signal line 438 to adjust the size of the metallizing composition and / or adjust the electrical characteristics of the signal line 438. For example, a portion of signal line 438 may be removed by laser trimming so that the trace has a particular resistance, voltage response, frequency response, tolerance, and / or other characteristics. Trimming allows current to flow through signal line 438, measure feedback from signal line 438, and / or adjust signal line 438 to adjust resistance, voltage response, frequency response, tolerances, and / or other characteristics. Actively removing a portion. In some configurations, the signal line 438 formed by thin film metallization and / or CVD is precisely controlled in size, resistance, voltage response, frequency response, tolerances and / or other characteristics of the signal line 438. Thus, removal of any part of the signal line 438 may not be necessary. In some examples, thin film metallization produces titanium signal lines having a height (or stack-up height) of about 0.1 micrometers and / or a tolerance of 30 micrometers (plus or minus). May be. In some examples, thin film metallization produces palladium signal lines having a height (or stackup height) of about 0.2 micrometers and / or a tolerance of 30 micrometers (plus or minus). Also good. In some examples, thin film metallization may produce a gold signal line having a height of about 3 micrometers with a tolerance of 1 micrometer (plus or minus).

  In some examples, a gold signal line having a thickness of 2-4 micrometers, 1-5 micrometers, 0-6 micrometers, a height of about 3 micrometers, or other suitable height by thin film metallization. May be produced. In some examples, thin film metallization may produce signal lines having a height tolerance of 1 micrometer (plus or minus). In some examples, thin film metallization may produce signal lines having a width of about 0.03 millimeters and / or a tolerance of 0.03 millimeters (plus or minus). In some examples, signal lines having a width of 0.01 to 0.05 millimeters may be created by thin film metallization. In some examples, thin film metallization may produce signal lines having 0.03 millimeter (plus or minus) tolerance between 0.03 millimeter signal lines. In some examples, signal lines having a spacing between 0.01-0.05 millimeter signal lines may be created by thin film metallization.

  Multi-layer substrate 442 may be formed by aligning one or more of the material layers and then bonding the aligned material layers together. The aligned material layers may be joined by thermal bonding, welding, adhesives, mechanical fixation, any suitable process, and / or combinations of the above. In some aspects, the aligned and bonded material layers may be cut into individual units to form a multilayer substrate, such as multilayer substrate 442. For example, the aligned and bonded material layers may be cut into several multilayer substrates. The aligned and bonded layers may be cut by mechanical cutting, laser cutting, plasma cutting, machining, or any other suitable process. Forming the multilayer substrate 442 may include scribing, profiling, and / or drilling. Scribing involves cutting the multilayer substrate 442 or a portion of the material layer and / or mechanically separating the multilayer substrate 442 or a portion of the material layer to weaken the multilayer substrate 442 or the material layer and facilitate mechanical separation. May be included. For scribing, the multilayer substrate 442 or material layer is irradiated with a laser pulse, which removes material that conforms to a straight line or curve, thereby weakening the multilayer substrate 442 or material layer and partially mechanically. It may include detaching.

  At various stages of manufacture, at least one of the optoelectronic components 428 may be coupled to at least one of the material layer, the top layer 440, the bottom layer 448, and the intermediate layer 446. At least one of the optoelectronic components 428 may be physically, electrically, or optically coupled. Additionally or alternatively, at least one of the optoelectronic components 428 may be formed in at least one of the material layer, the top layer 440, the bottom layer 448, and the intermediate layer 446. For example, at least one of the optoelectronic components 428 may be bonded to the top material layer or formed on the top material layer after the signal line 438 is formed. In another example, at least one of the optoelectronic components 428 may be coupled to the top layer 440 after the signal lines 438 have been formed but after the material layers have been separated to form individual units of the multilayer substrate. It may be formed on the top layer 440. In yet another example, at least one of the optoelectronic components 428 may be bonded to the bottom layer 448 or the bottom material layer or formed on the bottom layer 448 or the bottom material layer. In some situations, it may be more cost effective to form or join some of the optoelectronic components 428 before the material layers are separated to form individual units of the multilayer substrate.

  In some configurations, thin film metallization may be controlled to produce signal lines 438 that have tighter tolerances compared to traces 432 made by thick film metallization (or vice versa). ). For example, signal lines 438 made by thin film metallization may have positioning, height, width, spacing and / or other relative to tolerance of positioning, height, width, spacing and / or other dimensions of trace 432. May include tighter tolerances on the dimensions of In one example, thin film metallization may produce a signal line 438 having a width of about 0.03 millimeter with a tolerance of 0.01 millimeter (plus or minus), and thick film metallization may produce a. Traces 432 having a width of about 0.15 millimeters with a tolerance of 01 millimeters (plus or minus) may be made. In another example, thin film metallization may produce signal lines 438 having 0.03 millimeter signal line spacing with 0.01 millimeter (plus or minus) tolerance, and thick film metallization. Traces 432 may be made having a spacing between traces of 0.15 millimeters with a tolerance of 0.075 millimeters (plus or minus).

  Thin film metallization allows the creation of signal lines 438 that have tighter tolerances compared to traces 432 made by thick film metallization (or vice versa), so that the dimensions of signal line 438 Some or all may be smaller than some or all of the dimensions of trace 432. For example, the signal line 438 may include a width that is less than the width of the trace 432 and / or the signal line 438 may include a spacing that is less than the spacing of the trace 432 (or vice versa). Also, one deposition layer of the thin film metallized signal line may be thinner than one deposition layer of the thick film metallized trace. However, after the deposition of multiple layers, the height of both the thin film signal line and the thick film trace may be different and may be thicker or thinner in comparison. That is, multiple deposited layers can produce thicker signal lines or thicker traces.

  In such a configuration, tighter tolerances on signal line 438 allow for the production of appropriate signal line 438 and appropriate trace 432. In particular, due to tighter tolerances, the width and / or spacing of signal lines 438 reduces or eliminates the production of inappropriate signal lines that are in contact with each other because they are too wide or too narrow. This makes it possible to manufacture an appropriate signal line 438 having a narrower width and / or interval. Additionally or alternatively, the greater width and / or spacing of the traces 432 reduces or eliminates the production of inappropriate traces that are in contact with each other because they are too wide or too narrow. Therefore, even if the dimensional tolerance of the trace 432 is larger than the dimensional tolerance of the signal line 438, the width and / or the interval of the trace 432 can be increased, so that an appropriate trace 432 can be manufactured. To do.

  Thin film metallization may be used to create signal lines 438 that have tighter tolerances on positioning, height, width, spacing, and / or other dimensions, for example, closer placement of optoelectronic components 428. Enabling the production of smaller header subassemblies, such as header subassembly 420, and allowing more optoelectronic components 428 to be placed on header subassembly 420. Thick film metallization may be used to create features other than signal line 438, such as trace 432, and facilitates low manufacturing costs in situations where tighter tolerances are not required.

  Additionally or alternatively, thin film metallization is used to create RF lines such as signal lines 438 that have tighter tolerances on positioning, height, width, spacing, and / or other dimensions to control the RF response. May be used for Thick film metallization may be used to create features other than RF lines, such as traces 432, and facilitates low manufacturing costs in situations where RF response control is not required.

  Additionally or alternatively, the header subassembly 420 is a U.S. Provisional Patent Application No. 62 / 069,712 filed on Oct. 28, 2014, entitled SUBSTRATES INCLUDING OPTOELECTRONIC COMPONENTS. Any suitable embodiment of the document (incorporated herein by reference in its entirety) may be included.

  The optical component 400 will be described in more detail with reference to FIGS. 4A-4C. The optical component 400 may include a housing 406 that extends between a housing top 416 and a housing bottom 418. The housing top 416 and the housing bottom 418 generally mean a portion of the optical component 400 and are not limited to a portion of the end of the optical component 400 or a portion near the end of the optical component 400. The housing 406 may include a window 402 and an opening 412 defined by the housing 406. The aperture 412 may be configured to allow an optical signal to travel through at least a portion of the optical component 400 to the window 402. Window 402 may be at least partially light transmissive to transmit, direct and / or focus optical signals moving between optoelectronic components such as header subassembly 420, optical fiber and / or ferrule assembly. A configured lens 404 may also be included. For example, in some configurations, the optical signal may travel from the optical fiber through the aperture 412 and the lens 404 of the optical component 400 to the header subassembly 420.

  Optoelectronic sub-assembly 460 and / or optical component 400 is filed on Oct. 13, 2015, US patent application Ser. No. 14/881693 entitled MULTI-LENS OPTICAL COMPONENTS, and 2014. US Provisional Patent Application No. 62 / 063,225 filed Oct. 13, entitled MULTI-LENS OPTICAL COMPONENTS, both of which are incorporated herein by reference in their entirety. Any suitable embodiment). Additionally or alternatively, an optoelectronic subassembly 660 is disclosed in U.S. patent application Ser. Nos. 14/831499 and Aug. 20, 2014, filed Aug. 20, 2015 and named LENS RECEPTACLES. Any suitable embodiment of US Provisional Patent Application No. 62 / 039,758, filed LENS RECEPTACLES, both of which are hereby incorporated by reference in their entirety. May be included.

  Housing 406 and / or window 402 may define a housing cavity 410. In some configurations, the housing cavity 410 may hermetically seal a portion of the header subassembly when coupled to the header subassembly, and hence is referred to as a hermetically sealed housing cavity 410. . In a configuration not shown, the housing 406 may include a window seal that contributes to providing a hermetic seal between the optical component 400 and the window 402. In addition to or instead of providing a hermetic seal, the window seal may contribute to coupling the window 402 to the optical component 400.

  The housing bottom 418 may be configured to connect with the header subassembly 420. The housing 406 may include a housing flange 414 disposed on the housing bottom 418. The housing flange 414 may be configured to be coupled to the housing seat 430 of the header subassembly 420. The optical component 400 may be coupled to the header subassembly 420 by welding, soldering, glass soldering, adhesives, fasteners, fusion or any other suitable technique. The coupling between the optical component 400 and the header subassembly 420 can contribute to a hermetic seal of the header subassembly 420 and / or a portion of the optoelectronic component 428.

  As shown, the header subassembly 420 may include a square or rectangular configuration. The header subassembly 420 may include other configurations, such as a circle, a square with rounded or cut corners, or any other suitable configuration. The housing top 416 may be configured to connect with a ferrule assembly or receptacle. As shown, the optical component 400 may be substantially circular or annular, but in other configurations, the optical component 400 may be any suitable configuration, such as a rectangle. In such a configuration, the header subassembly 420, ferrule assembly, and / or receptacle may include a corresponding configuration for connection with the optical component 400, and vice versa. As shown, the housing top 416 may include a circular configuration corresponding to the circular configuration of the ferrule assembly and / or receptacle. In other configurations, the housing top 416 and the housing bottom 418 may include a rectangular or other suitable configuration.

  The housing 406 may be formed in part or in whole from any suitable material, such as metal, plastic polymer, glass or ceramic. The housing 406 may be formed by molding, machining, stamping, deposition, printing, or any suitable technique. The window 402 may be formed partially or wholly of a light transmissive material. For example, the window 402 may be formed partially or wholly of glass, plastic polymer, silicon compound, or other suitable material. The window 402 may be formed by molding, machining, stamping, deposition or other suitable process. In some configurations, the window 402 may be integrally formed with the housing 406. In such a configuration, window 402 and housing 406 may be formed of plastic polymer, glass or other suitable material.

  As shown in the figure, the lens 404 may be formed with light-transmitting convex surfaces on both sides of the window 402. The lens 404 may be configured to focus and / or transmit an optical signal between the optical fiber, the header subassembly 420, and / or other components. As shown, the lens 404 may include a circular configuration. In a configuration not shown, the lens 404 may include any suitable configuration, such as an oval, semi-circle, dome, sphere, or any other possible configuration. In some configurations, the lens 404 may be formed with one convex surface on any one of the surfaces of the window 402.

  The lens 404 may be integrally formed with the window 402 and may be coupled to the window 402 during or after manufacture of the lens 404. Window 402 and lens 404 may be integrally formed by molding, machining, stamping, deposition, or other suitable process. In some situations, integrally molding the window 402 and the lens 404 can contribute to cost-effective manufacturing of the optical component 400.

  If the lens 404 is not integrally formed with the window 402, the lens 404 may be formed individually by molding, machining, stamping, deposition, any other suitable process, or a combination of such processes. The lens 404 may then be bonded to the window 402 by fusing, soldering, adhesive, or any other suitable bonding technique. Alternatively, if the lens 404 is not integrally formed with the window 402, the lens 404 may be formed on the window 402 by deposition, printing, machining, or other suitable process.

  In some configurations, the header subassembly includes a bottom layer, a top layer having a top thin film signal line, and one or more intermediate layers having thick film traces between the top layer and the bottom layer. A multilayer substrate. The thick film trace can be electrically coupled to the top thin film signal line, and the optoelectronic component can be disposed on the multilayer substrate and electrically coupled to the signal line.

  In some configurations of the header subassembly, the top thin film signal line can have a first dimensional tolerance and the thick film trace can have a second dimensional tolerance that is greater than the first dimensional tolerance. In some configurations of the header subassembly, the first dimensional tolerance of the top thin film signal line can be about 0.01 millimeter and the second dimensional tolerance of the thick film trace can be about 0.15 millimeter. Can do. In some configurations of the header subassembly, the width tolerance of the thick film trace can be greater than the width tolerance of the top thin film signal line. In some configurations of the header subassembly, the spacing tolerance between the traces can be greater than the spacing tolerance between the top thin film signal lines. In some configurations of the header subassembly, the thick film trace positioning tolerance may be greater than the top thin film signal line positioning tolerance. In some configurations of the header subassembly, the thickness tolerance of the thick film trace can be greater than the height tolerance of the top thin film signal line.

  In some configurations of the header subassembly, the top thin film signal line can have a first dimension and the thick film trace can have a second dimension that is greater than the first dimension. In some configurations of the header subassembly, the top thin film signal lines may have a width or spacing that is less than the width or spacing of the thick film traces. In some configurations of the header subassembly, the top thin film signal line can include a width of 0.03 to 0.05 millimeters and the thick film trace can include a width of 0.10 to 0.20 millimeters. Can do. In some configurations of the header subassembly, the top thin film signal lines can include a spacing of 0.03 to 0.05 millimeters and the thick film traces can include a spacing of 0.15 to 0.20 millimeters. . In some configurations of the header subassembly, the top thin film signal line can include a width of about 0.03 millimeters with a tolerance of 0.01 millimeters.

  In some configurations of the header subassembly, the top thin film signal line or thick film trace is made of metal, silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W ) Or tungsten-molybdenum (WMo). In some configurations of the header subassembly, the top thin film signal line can be formed of titanium (Ti), palladium (Pd), or gold (Au).

  In some configurations of the header subassembly, the top thin film signal line can be formed of titanium having a height of about 0.1 micrometers with a tolerance of 0.05 micrometers. In some configurations of the header subassembly, the top thin film signal line can be formed of titanium having a height of 0.05 to 0.15 micrometers. In some configurations of the header subassembly, the top thin film signal line can be formed of palladium having a height of about 0.2 micrometers with a tolerance of 0.05 micrometers. In some configurations of the header subassembly, the top thin film signal line can be formed of palladium having a height of 0.1 to 0.3 micrometers. In some configurations of the header subassembly, the top thin film signal line can be formed of gold having a height of about 3 micrometers with a tolerance of 2 micrometers. In some configurations of the header subassembly, the top thin film signal line can be formed of gold having a height of 0-6 micrometers, 1-5 micrometers, 2-4 micrometers, and about 3 micrometers. In some configurations of the header subassembly, the top thin film signal lines can include a spacing between 0.03 millimeter signal lines having a tolerance of 0.01 millimeter. In some configurations of the header subassembly, the top thin film signal line can include a width of 0.03 millimeters with a tolerance of 0.01 millimeters.

  In some configurations of the header subassembly, the thick film trace can be formed of tungsten (W), nickel (Ni), or gold (Au). In some configurations of the header subassembly, the thick film traces can be formed of tungsten, 1-16 micrometers, 4-12 micrometers, 6-10 micrometers, 7-9 micrometers, or about 8 micrometers. Can include meter height. In some configurations of the header subassembly, the thick film traces can be formed of nickel and have a height of 0-6 micrometers, 0.1-5 micrometers, 1-3 micrometers, or about 2 micrometers. Can be included. In some configurations of the header subassembly, the thick film trace may include a width of about 0.15 millimeters with a tolerance of 0.13 millimeters or greater. In some configurations of the header subassembly, the thick film trace may include a width of 0-0.15 millimeters or 0.05-0.2 millimeters. In some configurations of the header subassembly, the thick film traces can include a spacing of about 0.15 millimeters with a tolerance of 0.13 millimeters or greater. In some configurations of the header subassembly, the thick film traces can include a spacing between traces of 0-0.3 millimeters, 0.05-0.25 millimeters, or 0.10-0.20 millimeters.

  In some configurations of the header subassembly, at least one layer of the multilayer substrate is made of ceramic material, silicon, silicon dioxide, alumina, aluminum nitrate, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, or phosphorous. It can be formed of indium chloride. In some configurations of the header subassembly, the optoelectronic component comprises at least one receiver, at least one transmitter, a multichannel receiver array and a multichannel laser array, a driver, a monitor photodiode, an integrated circuit, an inductor, a capacitor, One or more of control circuitry, lenses, prisms, mirrors and filters may be included. In some configurations of the header subassembly, the bottom layer can include a bottom thin film signal line. In some configurations of the header subassembly, at least one of the top thin film signal lines is an RF line. In some configurations, the header subassembly can include vias that extend into at least a portion of the multilayer substrate.

  In some configurations of the header subassembly, the via is metal, silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W) or tungsten-molybdenum (WMo). Can be formed. In some configurations of the header subassembly, the via is electrically coupled to the signal line. In some configurations, the header subassembly can include a contact pad on the bottom layer, the contact pad being electrically coupled to the via. In some configurations of the header subassembly, the contact pads are thin film contact pads or thick film contact pads. In some configurations of the header subassembly, the contact pads are metal, silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W) or tungsten-molybdenum (WMo). ).

  In some aspects, the method includes forming a material layer including a top material layer, a bottom material layer, and an intermediate material layer, and thick film tracing by thick film metallization on at least one of the material layers. And forming a thin film signal line by thin film metallization on at least one of the material layers.

  In some aspects, the method includes depositing a metallizing composition on at least one of the material layers. In some aspects of the method, depositing the metalizing composition includes one or more of coating, printing, screen printing, rotary printing, press printing, and ink jet printing.

  In some aspects of the method, depositing the metallizing composition comprises positioning a stencil over at least one of the material layers, moving the filling blade over at least one of the stencil and the material layers; Depositing the metalizing composition on at least one uncoated portion of the material layer and depositing the metalizing composition on a stencil on at least one coated portion of the material layer.

  In some aspects of the method, the metallizing composition comprises a conductive or semiconductive material. In some aspects of the method, the metallizing composition comprises silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W) and tungsten-molybdenum (WMo). One or more of.

  In some aspects, the method includes drying or curing at least one of the material layers. In some aspects, the method heats at least one of the steps of stabilizing the metallizing composition over time, evaporating a liquid component of the metallizing composition, and the materializing layer having the metallizing composition. One or more of a step, exposing the metalizing composition to radiation, and firing at least one of the material layers having the metalizing composition. In some aspects, the method may include one or more of sintering, bonding, and annealing the material layer having the metallizing composition.

  In some aspects of the method, the thin film signal lines or thick film traces are silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W) and tungsten-molybdenum. One or more of (WMo).

  In some aspects, the method includes depositing a thin film material on at least one of the material layers. In some aspects of the method, the thin film material is one of silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W), and tungsten-molybdenum (WMo). Including one or more.

  In some aspects of the method, depositing the thin film material comprises one or more of plating, chemical solution deposition, spin coating, chemical vapor deposition (“CVD”), plasma CVD, atomic layer deposition, thermal evaporation, and sputtering. including. In some aspects, the method includes exposing at least one of the material layers to a precursor gas. In some aspects, the method includes heating at least one of the material layers to a temperature that exceeds the temperature of the precursor gas. In some aspects, the method includes drying, curing, and firing after the precursor gas forms a solid deposit on at least one of the material layers.

  In some aspects, the method includes forming a thin film signal line on the top material layer. In some aspects, the method includes forming a thick film trace on at least one of the intermediate material layers. In some aspects, the method includes forming a thin film signal line on the bottom material layer. In some aspects, the method includes forming a contact pad on the bottom material layer by thin film metallization or thick film metallization.

  In some aspects of the method, the material layer can be formed by one or more of laser cutting, machining, scribing, mechanical cutting, plasma cutting, diamond cutting, sawing and dicing. In some aspects of the method, at least one of the material layers is one or more of silicon, silicon dioxide, alumina, aluminum nitrate, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide. Can be formed. In some aspects, the method can include removing one or more portions of the material layer, thick film trace, and thin film signal line.

  In some aspects, the method can include aligning one or more material layers and bonding the aligned material layers together. In some aspects of the method, the material layers can be joined by one or more of thermal bonding, welding, adhesive, and mechanical fixation. In some aspects, the method includes separating the combined material layers into a plurality of multilayer substrates. In some aspects of the method, the combined material layers can be separated by one or more of mechanical cutting, laser cutting, plasma cutting, scribing, profiling, drilling and machining.

  In some aspects, the method includes one or more of: coupling at least one optoelectronic component to at least one of the material layers; and forming at least one optoelectronic component in at least one of the material layers. Including. In some aspects of the method, the at least one optoelectronic component is one or more of a receiver, a transmitter, a multichannel receiver array, and a multichannel laser array.

  In some configurations, the optoelectronic subassembly is an optical component that includes a header subassembly including any suitable aspect described above and a housing extending between the housing top and the housing bottom, the optical component comprising at least a portion A window that can be optically transparent, an aperture defined by the housing, through which the optical signal can travel to the window, a lens that can focus the optical signal, a housing flange at the bottom of the housing, and a housing The optical component can be coupled to the header subassembly, and at least one of the optoelectronic components is at least partially hermetically sealed within the cavity. And an optical component to be sealed.

  In some configurations, the header subassembly includes a bottom layer, a top layer having a top thin film signal line having a first dimensional tolerance, and one having a thick film trace between the top layer and the bottom layer. The thick film trace can be electrically coupled to the top thin film signal line, and the thick film trace can have a second dimensional tolerance greater than the first dimensional tolerance. The optoelectronic component can be disposed on the multilayer substrate and can be electrically coupled to the signal line. In some configurations, the header subassembly includes any suitable aspect described above.

  In some aspects, the method includes forming a multilayer substrate by forming a bottom layer, a top layer, and an intermediate layer, and forming a thick film trace into at least one of the intermediate layers by thick film metallization. Forming a thin film signal line on the top layer by thin film metallization, and coupling one or more optoelectronic components to the multilayer substrate, wherein the optoelectronic component transmits an optical signal. Or configured to receive. In some aspects, the method may include any suitable aspect described above.

Aspects of the present disclosure may be embodied in other forms without departing from its spirit or essential characteristics. The described embodiments are considered in all respects as illustrative and not restrictive. The claimed subject matter is indicated by the appended claims rather than the foregoing description. All changes that come within the meaning and range of equivalency of the claims are to be embraced within their scope.

Claims (20)

A header subassembly,
A multilayer board,
The bottom layer,
A top layer having a top thin film signal line;
One or more intermediate layers having a thick film trace between the top layer and the bottom layer, wherein the thick film trace is electrically coupled to the top thin film signal line; and ,
A multilayer substrate comprising:
An optoelectronic component disposed on the multilayer substrate and electrically coupled to the top thin film signal line;
Including a header subassembly.   The header subassembly of claim 1, wherein the top thin film signal line has a first dimensional tolerance and the thick film trace has a second dimensional tolerance that is greater than the first dimensional tolerance.   The header subassembly of claim 1, wherein the top thin film signal line has a width or spacing that is less than a width or spacing of the thick film trace. The top thin film signal line is
Titanium (Ti) having a height of about 0.1 micrometers with a tolerance of 0.05 micrometers;
Palladium (Pd) with a height of about 0.2 micrometers with a tolerance of 0.05 micrometers, or gold (Au) with a height of about 3 micrometers with a tolerance of 2 micrometers,
The header subassembly of claim 2, wherein the header subassembly is formed of one or more of: The top thin film signal line is
A spacing between the thin film signal lines of 0.03 millimeters having a tolerance of 0.01 millimeters, or a width of 0.03 millimeters having a tolerance of 0.02 millimeters;
The header subassembly of claim 2 comprising one or more of: The thick film trace is made of tungsten (W), nickel (Ni) or gold (Au),
A height of 0-6 micrometers, or a spacing of 0-0.3 millimeters,
The header subassembly of claim 2 comprising one or more of:   The optoelectronic component includes at least one receiver, at least one transmitter, a multichannel receiver array and a multichannel laser array, a driver, a monitor photodiode, an integrated circuit, an inductor, a capacitor, a control circuit, a lens, a prism, a mirror, or The header subassembly of claim 1 including one or more of the filters.   The header subassembly of claim 1, wherein at least one of the top thin film signal lines is an RF line.   A contact pad is further included on the bottom layer, and the contact pad is electrically coupled to a via extending into at least a portion of the multilayer substrate, and the via is electrically coupled to the top thin film signal line. The header subassembly of claim 1. Forming a material layer comprising a top material layer, a bottom material layer, and an intermediate material layer;
Forming a thick film trace by thick film metallization on at least one of the material layers;
Forming a thin film signal line on at least one of the material layers by thin film metallization;
Coupling one or more optoelectronic components to the material layer, wherein the optoelectronic components are electronically coupled to the thin film signal and configured to transmit or receive optical signals; Steps,
Including a method.   The method of claim 10, further comprising depositing a thin film material on the top material layer to form the thin film signal line.   The thin film material comprises one or more of silver (Ag), gold (Au), nickel (Ni), titanium (Ti), palladium (Pd), tungsten (W), or tungsten-molybdenum (WMo). 11. The method according to 11.   The step of depositing the thin film material is one of plating, chemical solution deposition, spin coating, chemical vapor deposition (“CVD”), spin coating, chemical vapor deposition, plasma CVD, atomic layer deposition, thermal evaporation or sputtering. 12. The method of claim 11, comprising the above. The step of depositing the thin film material is
Exposing the at least one of the material layers to a precursor gas;
Heating the at least one of the material layers to a temperature above the temperature of the precursor gas;
Curing the precursor gas after forming a solid deposit on at least one of the material layers;
12. The method of claim 11 comprising:   The method of claim 10, further comprising forming the thick film trace on at least one of the intermediate material layers.   The method of claim 10, further comprising forming a contact pad on the bottom material layer by thin film metallization or thick film metallization.   The method further includes coupling or forming at least one optoelectronic component to at least one of the material layers, wherein the at least one optoelectronic component is one of a receiver, transmitter, multichannel receiver array, or multichannel laser array. 11. The method of claim 10, wherein there are two or more. An optoelectronic subassembly comprising:
A header subassembly comprising a multilayer substrate, wherein the multilayer substrate is
The bottom layer,
A top layer having a top thin film signal line having a first dimensional tolerance;
One or more intermediate layers having a thick film trace between the top layer and the bottom layer, wherein the thick film trace is electrically coupled to the top thin film signal line; The trace has one or more intermediate layers having a second dimensional tolerance greater than the first dimensional tolerance;
An optoelectronic component disposed on the multilayer substrate and electrically coupled to the top thin film signal line;
A header subassembly;
An optical component comprising a housing extending between a housing top and a housing bottom,
A window that is at least partially light transmissive;
A lens capable of focusing an optical signal, the lens disposed on the window;
An optical component comprising a housing cavity defined by the housing;
With
An optoelectronic subassembly, wherein the optical component is coupled to the header subassembly and at least partially hermetically seals at least one of the optoelectronic components within the housing cavity.   The optoelectronic component includes at least one receiver, at least one transmitter, a multichannel receiver array and a multichannel laser array, a driver, a monitor photodiode, an integrated circuit, an inductor, a capacitor, a control circuit, a lens, a prism, a mirror, or The optoelectronic subassembly of claim 18 including one or more of the filters. The header subassembly of claim 1, wherein at least one of the top thin film signal lines is an RF line.

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