JP2017521866A5 - - Google Patents
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- Publication number
- JP2017521866A5 JP2017521866A5 JP2017502123A JP2017502123A JP2017521866A5 JP 2017521866 A5 JP2017521866 A5 JP 2017521866A5 JP 2017502123 A JP2017502123 A JP 2017502123A JP 2017502123 A JP2017502123 A JP 2017502123A JP 2017521866 A5 JP2017521866 A5 JP 2017521866A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- measurement
- measurements
- sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005259 measurement Methods 0.000 claims 62
- 239000000758 substrate Substances 0.000 claims 32
- 238000000151 deposition Methods 0.000 claims 19
- 238000001228 spectrum Methods 0.000 claims 16
- 238000005498 polishing Methods 0.000 claims 14
- 238000011065 in-situ storage Methods 0.000 claims 12
- 238000004590 computer program Methods 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 5
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 2
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/333,395 US9811077B2 (en) | 2014-07-16 | 2014-07-16 | Polishing with pre deposition spectrum |
| US14/333,395 | 2014-07-16 | ||
| US201462026306P | 2014-07-18 | 2014-07-18 | |
| US62/026,306 | 2014-07-18 | ||
| PCT/US2015/039780 WO2016010821A1 (en) | 2014-07-16 | 2015-07-09 | Polishing with measurement prior to deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017521866A JP2017521866A (ja) | 2017-08-03 |
| JP2017521866A5 true JP2017521866A5 (zh) | 2018-08-16 |
| JP6666897B2 JP6666897B2 (ja) | 2020-03-18 |
Family
ID=55078925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017502123A Active JP6666897B2 (ja) | 2014-07-16 | 2015-07-09 | 堆積前の測定を伴う研磨 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6666897B2 (zh) |
| KR (1) | KR102534756B1 (zh) |
| CN (1) | CN106471606B (zh) |
| TW (1) | TWI726847B (zh) |
| WO (1) | WO2016010821A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7023062B2 (ja) * | 2017-07-24 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| KR102505902B1 (ko) * | 2017-08-04 | 2023-03-06 | 마이크로머티어리얼즈 엘엘씨 | 개선된 금속 콘택 랜딩 구조 |
| KR102614427B1 (ko) * | 2018-09-19 | 2023-12-18 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
| US11862520B2 (en) | 2021-02-03 | 2024-01-02 | Applied Materials, Inc. | Systems and methods for predicting film thickness of individual layers using virtual metrology |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4460659B2 (ja) * | 1997-10-22 | 2010-05-12 | 株式会社ルネサステクノロジ | 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置 |
| US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
| US6326309B2 (en) * | 1998-06-30 | 2001-12-04 | Fujitsu Limited | Semiconductor device manufacturing method |
| US6916525B2 (en) * | 2000-03-10 | 2005-07-12 | Koninklijke Philips Electronics N.V. | Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection |
| US6593238B1 (en) * | 2000-11-27 | 2003-07-15 | Motorola, Inc. | Method for determining an endpoint and semiconductor wafer |
| US6908361B2 (en) * | 2002-09-10 | 2005-06-21 | Winbond Electronics Corporation | Method of planarization of semiconductor devices |
| US8751033B2 (en) * | 2008-11-14 | 2014-06-10 | Applied Materials, Inc. | Adaptive tracking spectrum features for endpoint detection |
| JP5728239B2 (ja) * | 2010-03-02 | 2015-06-03 | 株式会社荏原製作所 | 研磨監視方法、研磨方法、研磨監視装置、および研磨装置 |
| KR101774031B1 (ko) * | 2010-05-05 | 2017-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 종료점 검출을 위한 스펙트럼 피쳐들의 동적 또는 적응 트랙킹 |
| TWI521625B (zh) * | 2010-07-30 | 2016-02-11 | 應用材料股份有限公司 | 使用光譜監測來偵測層級清除 |
| US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
| CN102856230B (zh) * | 2012-10-09 | 2015-02-04 | 深圳市华星光电技术有限公司 | Tft基板接触孔蚀刻制程监控方法 |
-
2015
- 2015-07-09 WO PCT/US2015/039780 patent/WO2016010821A1/en active Application Filing
- 2015-07-09 JP JP2017502123A patent/JP6666897B2/ja active Active
- 2015-07-09 KR KR1020177004233A patent/KR102534756B1/ko active IP Right Grant
- 2015-07-09 CN CN201580032549.1A patent/CN106471606B/zh active Active
- 2015-07-14 TW TW104122752A patent/TWI726847B/zh active
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