JP2017509152A - Texture etching solution composition for crystalline silicon wafer and texture etching method - Google Patents

Abstract

The present invention relates to a texture etching solution composition for a crystalline silicon wafer and a texture etching method using the same. The texture etchant composition for crystalline silicon wafers of the present invention comprises an alkali compound and a polyethylene glycol compound having a specific structure, controls the difference in etching rate with respect to the silicon crystal direction, and prevents overetching by the alkali compound. Minimize the quality deviation of texture by position. [Selection figure] None

Description

  The present invention relates to a texture etching solution composition and a texture etching method for a crystalline silicon wafer that minimizes a texture quality deviation by position on the surface of the crystalline silicon wafer and does not generate a temperature gradient during etching.

  Recently, solar cells that are rapidly spread are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source. The solar cell is configured as a PN junction semiconductor substrate in which phosphorus is diffused on the surface of a P-type silicon semiconductor obtained by adding boron to silicon to form an N-type silicon semiconductor layer.

  When a substrate having an electric field formed by a PN junction is irradiated with light such as sunlight, electrons (−) and holes (+) in the semiconductor are excited and move freely inside the semiconductor. When entering the electric field generated by such a PN junction, electrons (−) reach the N-type semiconductor and holes (+) reach the P-type semiconductor. When electrodes are formed on the surfaces of the P-type semiconductor and the N-type semiconductor and electrons are allowed to flow to an external circuit, current is generated. With this principle, solar energy is converted into electrical energy. Therefore, in order to increase the conversion efficiency of solar energy, the electrical output per unit area of the PN junction semiconductor substrate must be maximized. Therefore, the reflectance must be lowered and the amount of light absorption must be maximized. In consideration of such a surface, the surface of the silicon wafer for solar cells constituting the PN junction semiconductor substrate is formed in a fine pyramid structure, and the antireflection film is processed. The surface of a silicon wafer textured in a fine pyramid structure reduces the reflectance of incident light having a wide wavelength band and increases the intensity of light already absorbed, thereby improving the performance of the solar cell, that is, the efficiency. be able to.

  As a method for texturing the surface of a silicon wafer into a fine pyramid structure, U.S. Pat. No. 4,137,123 describes 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount. A silicon texture etching solution in which 0.5 to 10% by weight of silicon is dissolved in an anisotropic etching solution containing water is disclosed. However, this etching solution may cause poor formation of pyramids, increase light reflectivity, and reduce efficiency.

  Korean Patent No. 0806621 has a texture etching solution in which 0.5 to 5% by volume of potassium hydroxide solution, 3 to 20% by volume of isopropyl alcohol, and 75 to 96.5% by volume of deionized water are mixed. US Pat. No. 6,451,218 discloses a texture etching solution containing an alkali compound, isopropyl alcohol, water-soluble alkaline ethylene glycol and water. However, since these etching solutions contain isopropyl alcohol having a low boiling point, it is necessary to add the isopropyl alcohol during the texturing process, which is not economical in terms of productivity and cost. In addition, a temperature gradient of the etching solution made of additionally supplied isopropyl alcohol is generated, and the texture quality deviation for each position on the surface of the silicon wafer is increased, which may reduce the uniformity.

U.S. Pat. No. 4,137,123 Korean Registered Patent No. 0806621 US Pat. No. 6,451,218

  In the present invention, when a fine pyramid structure is formed on the surface of a crystalline silicon wafer, the difference in texture quality by position is minimized by controlling the difference in etching rate with respect to the silicon crystal direction and preventing overetching by alkali compounds. Another object of the present invention is to provide a textured etchant composition for crystalline silicon wafers that increases light efficiency.

  Another object of the present invention is to provide a texture etching method for a crystalline silicon wafer using the texture etching solution composition for a crystalline silicon wafer.

  It is another object of the present invention to provide a texture etching method for a crystalline silicon wafer that does not require the introduction of another etchant component and the application of an airing process during the etching process.

  1. A texture etching solution composition for a crystalline silicon wafer, comprising an alkali compound and a compound of the following chemical formula 1.

（式中、Ｒは炭素数１乃至６のアルキル基又はフェニル基であり、Ｘは互いに独立的に水素又はメチル基であり、ｙは１乃至３の整数であり、Ｍはアルカリ金属である。)
２．前記１において、前記Ｍは、ナトリウム又はカリウムである、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
３．前記１において、前記アルカリ化合物は、水酸化カリウム、水酸化ナトリウム、水酸化アンモニウム、テトラヒドロキシメチルアンモニウム及びテトラヒドロキシエチルアンモニウムからなる群から選択される少なくとも一つである、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
４．前記１において、前記エッチング液組成物は、多糖類を更に含んだ、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
５．前記４において、前記多糖類は、グルカン系化合物、フルクタン系化合物、マンナン系化合物、ガラクタン系化合物及びこれらの金属塩からなる群から選択される少なくとも一つである結晶性シリコンウェーハのテクスチャーエッチング液組成物。
６．前記４において、前記多糖類は、セルロース、ジメチルアミノエチルセルロース、ジエチルアミノエチルセルロース、エチルヒドロキシエチルセルロース、メチルヒドロキシエチルセルロース、4-アミノベンジルセルロース、トリエチルアミノエチルセルロース、シアノエチルセルロース、エチルセルロース、メチルセルロース、カルボキシメチルセルロース、カルボキシエチルセルロース、ヒドロキシエチルセルロース、ヒドロキシプロピルセルロース、アルギン酸、アミロース、アミロペクチン、ペクチン、澱粉、デキストリン、α-シクロデキストリン、β-シクロデキストリン、γ-シクロデキストリン、ヒドロキシプロピル-β-シクロデキストリン、メチル-β-シクロデキストリン、デキストラン、デキストラン硫酸ナトリウム、サポニン、グリコーゲン、ザイモサン、レンチナン、シゾフィラン及びこれらの金属塩からなる群から選択された1種以上のグルカン系化合物である、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
７．前記１において、前記アルカリ化合物０．５乃至５重量％、前記化学式１の化合物０．００１乃至５重量％及び残量の水を含んだ、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
８．前記７において、前記エッチング液組成物は、多糖類０．０００１乃至２重量％を更に含んだ、結晶性シリコンウェーハのテクスチャーエッチング液組成物。
９．前記１乃至８のいずれか1つに記載のエッチング液組成物による結晶性シリコンウェーハのテクスチャーエッチング方法。
１０．前記９において、前記エッチング液組成物を５０乃至１００ ℃の温度で、３０秒乃至６０分間噴霧させることを含んだ、結晶性シリコンウェーハのテクスチャーエッチング方法。
１１．前記９において、前記エッチング液組成物に前記ウェーハを５０乃至１００ ℃の温度で、３０秒乃至６０分間浸漬させる、結晶性シリコンウェーハのテクスチャーエッチング方法。

(In the formula, R is an alkyl group having 1 to 6 carbon atoms or a phenyl group, X is independently hydrogen or a methyl group, y is an integer of 1 to 3, and M is an alkali metal. )
2. 2. The texture etchant composition for crystalline silicon wafers according to 1 above, wherein M is sodium or potassium.
3. In 1 above, the alkaline compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium, texture etching of a crystalline silicon wafer Liquid composition.
4). 2. The texture etchant composition for crystalline silicon wafers according to 1 above, wherein the etchant composition further contains a polysaccharide.
5. 4. The texture etching solution composition of crystalline silicon wafer according to 4, wherein the polysaccharide is at least one selected from the group consisting of a glucan compound, a fructan compound, a mannan compound, a galactan compound, and a metal salt thereof. object.
6). In 4 above, the polysaccharide is cellulose, dimethylaminoethylcellulose, diethylaminoethylcellulose, ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxy Ethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, hydroxypropyl-β-cyclodextrin, methyl-β-cyclodextrin, dextran, Dextran sulfate sodium, saponin, A texture etching solution composition for a crystalline silicon wafer, which is at least one glucan compound selected from the group consisting of glycogen, zymosan, lentinan, schizophyllan and metal salts thereof.
7). A texture etching solution composition for a crystalline silicon wafer according to 1 above, comprising 0.5 to 5% by weight of the alkali compound, 0.001 to 5% by weight of the compound of Formula 1, and the remaining amount of water.
8). 7. The texture etchant composition for crystalline silicon wafers according to 7, wherein the etchant composition further contains 0.0001 to 2% by weight of polysaccharide.
9. A method for texture etching a crystalline silicon wafer using the etching solution composition according to any one of 1 to 8 above.
10. 9. The method for etching a crystalline silicon wafer according to 9, wherein the etching solution composition is sprayed at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.
11. 9. The method for texture etching a crystalline silicon wafer according to 9, wherein the wafer is immersed in the etching solution composition at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.

  According to the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention, by controlling the difference in the etching rate with respect to the silicon crystal direction and preventing overetching by the alkali compound, Minimize the quality deviation of texture by position, that is, improve the uniformity of texture and maximize the amount of sunlight absorbed.

FIG. 1 is a photograph of an optical microscope (1000 magnifications) of the surface of a single crystal silicon wafer substrate etched using the crystalline silicon wafer texture etchant composition of Example 1. FIG. 2 is an SEM photograph of the surface of a single crystal silicon wafer substrate etched using the etching solution composition for crystalline silicon wafer texture of Example 1. FIG. 3 is a SEM photograph of the surface of a single crystal silicon wafer substrate etched using the etching solution composition for crystalline silicon wafers in Example 2. 4 is a photograph of the surface of a single crystal silicon wafer etched using the etching solution composition for texture of a crystalline silicon wafer of Example 2. FIG. FIG. 5 is an SEM photograph of the surface of a single crystal silicon wafer substrate etched using the etching solution composition for crystalline silicon wafer texture of Example 3. 6 is a photograph taken with an optical microscope (1000 magnifications) of the surface of a single crystal silicon wafer substrate etched using the crystalline silicon wafer texture etchant composition of Example 6. FIG. FIG. 7 is a photograph of the surface of a single crystal silicon wafer etched using the etching solution composition for crystalline silicon wafer texture of Example 4. FIG. 8 is a SEM photograph of the surface of a single crystal silicon wafer substrate etched using the etching solution composition for crystalline silicon wafers in Comparative Example 1. FIG. 9 is a photograph of the surface of a single crystal silicon wafer etched using the etching solution composition for crystalline silicon wafers in Comparative Example 1. FIG. 10 is an SEM photograph of the surface of a single crystal silicon wafer substrate etched using the etching solution composition for crystalline silicon wafer texture of Comparative Example 3. FIG. 11 is a photograph of the surface of a single crystal silicon wafer etched with the textured etchant composition for crystalline silicon wafers of Comparative Example 3. FIG. 12 is a flowchart illustrating a method for continuously etching a silicon wafer according to an embodiment of the present invention. FIG. 13 is an electron micrograph of the surface of the substrate that has undergone the initial etching process and the substrate that has undergone the final etching process after performing continuous etching using the etching solution of Example 20. FIG. 14 is a photograph of the substrate surface taken through the last etching step after continuous etching using the etching solution of Example 25. FIG. 15 is an electron micrograph of the surface of the substrate that has undergone the initial etching process and the substrate that has undergone the final etching process after performing continuous etching using the etching solution of Comparative Example 4. FIG. 16 is a photograph of the surface after the final etching process after continuous etching using the etching solution of Comparative Example 6.

  The present invention includes an alkali compound and a polyethylene glycol compound having a specific structure, so that when the fine pyramid structure is formed on the surface of the crystalline silicon wafer, the difference in etching rate with respect to the silicon crystal direction is controlled, and the alkali compound-induced excess The present invention relates to a texture etching solution composition and a texture etching method for a crystalline silicon wafer that prevents etching, minimizes the quality deviation of texture by position, and increases light efficiency.

  The present invention is described in detail below.

Texture etching solution composition of crystalline silicon wafer The texture etching solution composition of the crystalline silicon wafer of the present invention contains an alkali compound and a polyethylene glycol compound having a specific structure.

  In the present invention, the polyethylene glycol compound having a specific structure is represented by the following chemical formula 1.

前記化学式１において、Ｒは炭素数１乃至６のアルキル基又はフェニル基であり、Ｘは互いに独立的に水素又はメチル基であり、ｙは１乃至３の整数であり、Ｍはアルカリ金属である。好ましくは、Ｍはナトリウム又はカリウムである。

In the chemical formula 1, R is an alkyl group having 1 to 6 carbon atoms or a phenyl group, X is independently hydrogen or methyl group, y is an integer of 1 to 3, and M is an alkali metal. . Preferably M is sodium or potassium.

  The compound of Formula 1 according to the present invention exhibits a better etching rate control ability with respect to the (100) and (111) planes of the silicon crystal. In particular, the quality deviation of the texture is minimized by adsorbing to the surface of single crystal silicon when etching single crystal silicon with alkali compounds, suppressing the etching rate in the (100) direction due to hydroxyl groups, and preventing overetching with alkali compounds. Turn into. It also improves the wettability of the crystalline silicon wafer surface and quickly removes the hydrogen bubbles generated by etching from the silicon surface, thereby preventing the occurrence of bubble stick phenomenon and improving the texture quality. Can do.

  As an example of the method for producing the compound of Chemical Formula 1 according to the present invention, the following Reaction Formula 1 can be mentioned.

  That is, it can be obtained by reacting polyethylene glycol and an ether compound of R with an alkali metal, a salt thereof, or a hydroxide. Among these, using an alkali metal or an alkali metal salt (for example, an alkali metal hydride compound) is more advantageous in terms of generating less unreacted materials than using an alkali metal hydroxide. It can be said that it is preferable.

  In the present invention, the content of the compound represented by Chemical Formula 1 is not particularly limited, and may be, for example, 0.001 to 5% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 0. 0.01 to 2% by weight. When the content falls within the above range, overetching and accelerated etching can be effectively prevented. When the content is less than 0.001% by weight, it becomes difficult to control the etching rate with the alkali compound, and it becomes difficult to obtain a uniform texture shape. On the other hand, when it exceeds 5% by weight, it becomes difficult to rapidly reduce the etching rate by the alkali compound and form the desired fine pyramid.

  The alkali compound in the present invention can be used without limitation as long as it is an alkali compound usually used as a component for etching the surface of a crystalline silicon wafer. Specific examples include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like. Among these, potassium hydroxide and sodium hydroxide are preferable. These can be used alone or in admixture of two or more.

  Although the content of the alkali compound is not particularly limited, for example, it is included in an amount of 0.5 to 5% by weight, preferably 1 to 3% by weight, based on the total weight of the texture etching solution composition of the crystalline silicon wafer. When the content falls within the above range, the surface of the silicon wafer can be etched.

  In the present invention, the texture etching liquid composition of the crystalline silicon wafer can be adjusted to the total composition by adding water after appropriately adopting the above components specifically as necessary, so that the total composition The remaining amount of things is occupied by water. Preferably, the components are adjusted so as to be in the content range described above.

  The type of the water is not particularly limited, but is preferably deionized distilled water, and more preferably a specific resistance value of 18 MΩ · cm or more as deionized distilled water for semiconductor processes.

  If necessary, the etching solution composition of the present invention may additionally contain a polysaccharide.

  In the present invention, a polysaccharide is a saccharide in which two or more monosaccharides form a glycoside bond to form a large molecule, which prevents overetching and acceleration of etching by an alkali compound and forms a uniform fine pyramid. At the same time, it is a component that quickly removes hydrogen bubbles generated by etching from the surface of the silicon wafer and prevents the bubble stick phenomenon.

  The texture etchant composition for crystalline silicon wafers of the present invention further includes a polysaccharide in addition to the compound of Chemical Formula 1, thereby controlling the difference in etching rate with respect to the silicon crystal direction and preventing overetching by an alkali compound. As a result, the quality deviation of the texture for each position on the surface of the crystalline silicon wafer can be further minimized, that is, the texture uniformity can be improved and the amount of sunlight absorbed can be maximized. In addition, even if a repeated etching process is performed, it is possible to prevent the quality of the etched wafer from being deteriorated.

  The type of the polysaccharide is not particularly limited, and specifically, glucan compounds, fructan compounds, mannan compounds, galactan compounds, or metal salts thereof Is mentioned. Of these, glucan compounds and metal salts thereof (for example, alkali metal salts) are preferable. These may be used alone or in combination of two or more.

  The type of the glucan compound is not particularly limited, and specifically, cellulose, dimethylaminoethylcellulose, diethylaminoethylcellulose, ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, Methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, hydroxypropyl-β-cyclodextrin, Methyl-β-cyclodextrin, dextran, dex Examples include sodium transsulfate, saponin, glycogen, zymosan, lentinan, schizophyllan, and metal salts thereof. Among these, carboxymethylcellulose is preferable. These can be used alone or in admixture of two or more.

  The polysaccharide has an average molecular weight of 5,000 to 1,000,000, preferably 50,000 to 200,000, but is not necessarily limited thereto.

  The content of the polysaccharide is not particularly limited, and may be, for example, 0.0001 to 2% by weight with respect to the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 0.001 to 0.00. It should be 1% by weight. When the content falls within the above range, overetching and accelerated etching can be effectively prevented. When the content exceeds 2% by weight, it is difficult to form the desired fine pyramid by rapidly decreasing the etching rate with the alkali compound.

  In some cases, it may further contain additional additives known in the art as long as the object and effects of the present invention are not impaired. These components include viscosity modifiers and pH adjusters.

  The crystalline silicon wafer texture etchant composition of the present invention can be applied to all usual etching processes, such as dipping, spraying, and single wafer etching processes.

Texture etching method invention of the crystalline silicon wafer provides a texture etching method of a crystalline silicon wafer using a texture etching solution composition of the crystalline silicon wafer.

  The crystalline silicon wafer texture etching method comprises the steps of immersing the crystalline silicon wafer in the crystalline silicon wafer texture etchant composition of the present invention, and the crystalline silicon wafer texture etchant composition of the present invention in crystalline silicon. Including the step of spraying the wafer or all the two steps.

  The number of immersion and spraying is not particularly limited, and the order of immersion and spraying is not limited.

  The dipping, spraying or dipping and spraying steps can be performed at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.

  The crystalline silicon wafer texture etching method of the present invention as described above is simple in spite of being economical in terms of initial production and process costs because it is not necessary to introduce a separate air rating device for supplying oxygen. Even a simple process can form a uniform fine pyramid structure.

  In the following, preferred examples are presented to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments within the scope and scope of the technical idea, and such variations and modifications fall within the scope of the appended claims. is there.

Examples and Comparative Examples A remaining amount of water (H ₂ O) was added to the components and contents shown in Tables 1 and 2 below to produce a texture etching solution composition for a crystalline silicon wafer.

Experimental Example A single crystal silicon wafer (156 mm × 156 mm) was immersed in an alkaline etchant composition of crystalline silicon wafers of Examples and Comparative Examples.

  At this time, the texture conditions of Examples 1 to 19 and Comparative Examples 1 to 3 are the same as in Table 4 below, and the texture conditions of Examples 20 to 30 and Comparative Examples 4 to 6 are a temperature of 80 ° C. and a time of 20 Minutes.

  In the case of Examples 20 to 30 and Comparative Examples 4 to 6, when 20 wafers are used for each etching process in the 18 L capacity bus, the appearance, etching amount, and reflectance characteristics change. Etching was performed continuously.

  The texture effects of the etching liquid compositions of the crystalline silicon wafers produced in the examples and comparative examples were evaluated by the following methods, and the results are shown in Tables 4 and 5 below.

1. Etching amount The change in weight of the wafer before and after etching was measured.
2. Evaluation of the reflectance of the texture The reflectance when the surface of the etched single crystal silicon wafer was irradiated with light having a wavelength band of 600 nm was measured using a UV spectrophotometer.
3. Evaluation of Texture Uniformity (Appearance) The uniformity of the texture of the etched single crystal silicon wafer surface was evaluated using an optical microscope and SEM, and the pyramid size was evaluated using SEM.
<Evaluation criteria>
◎: Pyramid is formed on the entire surface of the wafer ○: Pyramid is not formed on part of the wafer (Pyramid structure is not formed less than 5%)
Δ: Pyramid is not formed on a part of the wafer (Pyramid structure is not formed 5 to 50%)
×: Pyramid is not formed on the wafer (the degree of pyramid not formed is 90% or more)
4). Number of continuous etching processes Based on the etching amount, reflectance, and appearance of the initial etching process, the amount of change in the etching amount during the continuous etching process is within ± 0.2 g, the variation in reflectance is within ± 1%, and the appearance The number of etching steps up to a range free from white spots, unevenness, and glare was measured.

  Referring to Table 4 and FIGS. 1 to 11, the silicon wafer etchant composition of the example is superior in the degree of pyramid formation on the entire surface of the single crystal silicon wafer as compared with the comparative example, and has a low reflectance value. You can see that And as a result of expanding to high magnification and confirming the degree of pyramid formation by optical microscope and SEM analysis, it was confirmed that a high density pyramid was formed.

  However, the silicon wafer etchant composition of Example 4 in which the compound of Chemical Formula 1 was added in an excessive amount slightly reduced the texture uniformity and caused some unevenness on the wafer surface (see FIG. 7). ).

  Further, according to the comparison between Example 1 and Comparative Example 1, it was confirmed that the texture quality deviation was minimized by preventing over-etching when the compound of Formula 1 was included. In addition, in the comparison between Example 6 and Comparative Example 3, it was confirmed that if the compound of Chemical Formula 1 was included, a more uniform texture was formed even if the alkali compound was contained at a low concentration. .

  Referring to Table 5 and FIGS. 13 to 16, the etching composition of the silicon wafer of the example can increase the number of etching steps when the continuous etching proceeds as compared with the composition of the comparative example, and the etching amount It was confirmed that the change width of the reflectance was small. Furthermore, it was confirmed that a very small and uniform pyramid was formed on the entire surface of the single crystal silicon wafer.

  And as a result of magnifying to high magnification using an optical microscope and SEM analysis and observing the pyramid formation degree of the start etching process and the last etching process, the examples belonging to the scope of the present invention are a continuous etching process. It was confirmed that a pyramid that is uniform and has a small deviation in the texture structure was formed even under the conditions described above.

  Comparative Examples 4 and 5 form a uniform texture structure as a result of the same evaluation conditions as in Examples 20 and 25. However, as the continuous etching process proceeds, the size of the pyramid increases. It was confirmed that the number was lower than that in the example.

  Comparative Example 6 was a case where the compound of Chemical Formula 1 was not included, and it was confirmed that the items of the number of continuous etching steps, the etching amount, the reflectance, and the appearance all significantly decreased as compared with the Examples.

Claims (11)

A textured etchant composition for a crystalline silicon wafer, comprising an alkali compound and a compound of the following chemical formula 1.

(In the formula, R is an alkyl group having 1 to 6 carbon atoms or a phenyl group, X is independently hydrogen or a methyl group, y is an integer of 1 to 3, and M is an alkali metal. )   2. The texture etchant composition for a crystalline silicon wafer according to claim 1, wherein M is sodium or potassium.   2. The texture of a crystalline silicon wafer according to claim 1, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium. Etching solution composition.   2. The texture etchant composition for crystalline silicon wafers according to claim 1, wherein the etchant composition further contains a polysaccharide.   5. The texture etching of a crystalline silicon wafer according to claim 4, wherein the polysaccharide is at least one selected from the group consisting of a glucan compound, a fructan compound, a mannan compound, a galactan compound, and a metal salt thereof. Liquid composition.   In Claim 4, the polysaccharide is cellulose, dimethylaminoethylcellulose, diethylaminoethylcellulose, ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, Hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, hydroxypropyl-β-cyclodextrin, methyl-β-cyclodextrin, dextran , Dextran sulfate sodium, saponin A texture etching solution composition for a crystalline silicon wafer, which is at least one glucan compound selected from the group consisting of glycogen, zymosan, lentinan, schizophyllan and metal salts thereof.   2. The texture etchant composition for a crystalline silicon wafer according to claim 1, comprising 0.5 to 5% by weight of the alkali compound, 0.001 to 5% by weight of the compound of Formula 1, and the remaining amount of water.   8. The texture etchant composition for a crystalline silicon wafer according to claim 7, wherein the etchant composition further contains 0.0001 to 2% by weight of a polysaccharide.   A method for texture etching a crystalline silicon wafer using the etching solution composition according to claim 1.   10. The method for texture etching a crystalline silicon wafer according to claim 9, comprising spraying the etching solution composition at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.   10. The method of etching a crystalline silicon wafer according to claim 9, wherein the wafer is immersed in the etching solution composition at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.

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