JP2017228733A - Functional layer transfer body and method for manufacturing resin-sealed semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a resin-sealed semiconductor device capable of improving production efficiency of the semiconductor device by improving work for temporarily fixing a functional layer into a mold in advance.SOLUTION: A resin-sealed semiconductor device seals a semiconductor element fixed to a functional layer transfer body used for manufacturing the resin-sealed semiconductor device and including a dummy frame and a functional layer and to a base composed of a wiring board or a lead frame by a sealing resin using a mold. A method for manufacturing the resin-sealed semiconductor device includes the steps of: temporarily fixing the functional layer temporarily fixed to the dummy frame on a metallic molding surface by transferring the functional layer to the metallic molding surface; placing the semiconductor element fixed to the base composed of a wiring board or a lead frame in the mold; and sealing the semiconductor element by injecting the sealing resin into the mold.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a functional layer transfer body and a method for manufacturing a tree-sealed semiconductor device using the same.

  In recent years, in the electrical and electronic field, the transportation field, and the like, the number of semiconductor devices mounted is increasing more than ever in order to precisely control the energy used. Along with this, it is necessary to take measures against the problem of malfunction of electronic equipment due to electromagnetic noise emitted from the semiconductor device, and the problem of functional deterioration and lifetime reduction due to heat generation of the semiconductor device.

Conventionally, various functional layers such as an electromagnetic wave shielding layer having an electromagnetic wave shielding effect and a heat radiating layer having a high heat radiation effect have been provided on the outer peripheral portion of the semiconductor device. (For example, see Patent Documents 1 and 2)
As a method of providing the functional layer on the outer peripheral portion, there is a method of installing the semiconductor device on the outer peripheral portion after manufacturing the semiconductor device, but in this case, there is a problem that the number of processes increases and the adhesive force between the functional layer and the semiconductor device is increased. There is a problem of being weak. In order to solve this problem, a method has been proposed in which the functional layer is fixed to the release film, and the release film with the functional layer is placed in a mold and then encapsulated with resin. However, even in this case, there is a problem that there is a concern about an increase in the process of peeling the release film from the mold and a resin leak at the time of resin sealing.

Therefore, the present applicant is a resin-encapsulated semiconductor device that prevents noise disturbance of various resin-encapsulated semiconductor devices used in information communication equipment such as high-frequency equipment, equipment, and devices in particular, and conventionally Although a release film was necessary in the process, a manufacturing method was easily proposed in which a resin-encapsulated semiconductor device having an electromagnetic wave shielding function can be easily obtained (Patent Document 3).
According to Patent Document 3, although it is a manufacturing method that can easily obtain a resin-encapsulated semiconductor device having an electromagnetic wave shielding function without using a release film, when temporarily fixing an electromagnetic wave shielding layer in advance in a mold, It was performed manually and had the problem of poor production efficiency.

International Publication No. 2013/183671 JP2015-173232A Japanese Patent Application No. 2006-055260

  The present invention has been made in view of the above problems, and the problem is that a method for manufacturing a resin-encapsulated semiconductor device in which the work of temporarily fixing a functional layer in a mold is improved and the production efficiency is improved. Is to provide.

The gist of the present invention is as follows.
(1) A functional layer transfer body used for manufacturing a resin-encapsulated semiconductor device, wherein the functional layer transfer body includes a dummy frame and a functional layer.
(2) The functional layer transfer body according to (1), wherein the functional layer is temporarily fixed to a dummy frame.
(3) The functional layer transfer body according to (1) or (2), wherein the functional layer is an electromagnetic wave shielding layer.
(4) The functional layer transfer body according to (3), wherein the electromagnetic wave shielding layer is a sheet in which a conductive layer having pores is formed in a resin layer.
(5) A method of manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate made of a wiring board or a lead frame is sealed with a sealing resin using a mold,
A step of transferring the functional layer temporarily fixed to the dummy frame to the mold forming surface and temporarily fixing the functional layer to the mold forming surface, and a semiconductor element fixed to the base made of a wiring board or a lead frame as the mold A method for manufacturing a resin-encapsulated semiconductor device, comprising: a step of placing in a mold; and a step of injecting a sealing resin into a mold to seal a semiconductor element.
(6) The function layer according to (5), wherein a resin in the thickness direction is unevenly distributed, and a surface having a large resin ratio of the function layer is temporarily fixed to a molding surface. Manufacturing method of resin-encapsulated semiconductor device.

  According to the method for manufacturing a resin-encapsulated semiconductor device of the present invention, by using a functional layer transfer body having a dummy frame and a functional layer, functional layers are collectively placed in a mold for molding individual semiconductor devices. Since it can be temporarily fixed, the production efficiency of the semiconductor device can be improved.

FIG. 1 is a view showing a functional layer transfer body of the present invention. FIG. 2 is a diagram showing a dummy frame. FIG. 3 is an embodiment of a functional layer. FIG. 4 shows another embodiment of the functional layer transfer body. FIG. 5 is a cross-sectional view of an electromagnetic wave shielding layer obtained by impregnating a resin in a sheet-like conductive material having pores.

FIG. 6 is a diagram showing a process of transferring the functional layer temporarily fixed to the dummy frame to the mold forming surface and temporarily fixing the functional layer to the mold forming surface. FIG. 7 shows another embodiment of the functional layer transfer body. FIG. 8 is a diagram showing a process for manufacturing the resin-encapsulated semiconductor device of the present invention.

Hereinafter, the present invention will be described in detail.
[Functional layer transfer body]
FIG. 1 is a view showing a functional layer transfer body of the present invention. In FIG. 1, the functional layer transfer body 1 has a dummy frame 2 and a plate-like functional layer 3. FIG. 1A is a cross-sectional view of the functional layer transfer body 1, and FIG. 1B is a perspective view of the functional layer transfer body 1. The functional layer 3 is temporarily fixed to the dummy frame 2.
2A and 2B are diagrams showing the dummy frame 2, in which FIG. 2A is a cross-sectional view of the dummy frame 2, and FIG. 2B is a perspective view of the dummy frame 2. As shown in FIG. 2, the dummy frame 2 has a protrusion 4 for temporarily fixing the functional layer 3 in a mold for manufacturing a semiconductor device. As shown in FIG. 1, the functional layer 3 is temporarily fixed to the protrusion 4 of the dummy frame 2.
By making the dummy frame 2 have the same shape as a base made of a wiring substrate or a lead frame in a semiconductor device when resin-sealing, the functional layer 3 can be temporarily fixed efficiently in the mold. The dummy frame 2 can be appropriately designed to match the shape of the mold.
1 and 2 show the dummy frame 2 having two protrusions 4, the protrusions 4 may have three or more protrusions 4 in accordance with a mold for manufacturing a semiconductor device. .

FIG. 3 is another embodiment of the functional layer 3, FIG. 3 (a) is a perspective view showing the box-shaped functional layer 3, and FIG. 3 (b) is a perspective view of FIG. 3 (a) from another direction. It is the shown perspective view.
The box-shaped functional layer 3 shown in FIG. 3A has a shape that covers five surfaces of a semiconductor device in which a semiconductor element fixed to a base made of a wiring board or a lead frame is sealed with a resin. The functional layer 3 that can cover the five surfaces of such a semiconductor device can be expected to have an insulating effect, a heat dissipation effect, an electromagnetic wave suppression effect, and the like as compared with the plate-like functional layer 3 as shown in FIG.
FIG. 4 is a perspective view of the functional layer transfer body 1 in which the box-shaped functional layer 3 in FIG. 3 is temporarily fixed to the protrusion 4 of the dummy frame 2.

The material of the dummy frame in the present invention is not particularly limited with respect to the material such as resin, metal, ceramic, etc., but the higher the heat capacity of the dummy frame, the easier the functional layer is transferred to the mold, and the harder the material of the dummy frame is Resins are most preferred because they increase the risk of mold breakage.
When the functional layer is temporarily fixed to the mold, the resin is preferably a heat resistant resin because it is in contact with the mold maintained at a high temperature. Examples of the heat resistant resin include isocyanurate resin, imide resin, polyamide, phenol resin, melamine resin, polyphenylene ether resin, and the like.

  The dummy frame according to the present invention may be provided with a slightly adhesive layer 13 on the functional layer fixing surface side as shown in FIG. By providing the slightly adhesive layer 13 on the dummy frame, it becomes easy to temporarily fix the functional layer to the dummy frame. Since the slightly adhesive surface of the slightly adhesive layer 13 in the present invention has mild adhesiveness, the functional layer can be temporarily fixed, but after the functional layer is temporarily fixed in the mold, It is easily peeled off from the dummy frame. Although the slightly adhesive layer 13 in FIG. 2C is provided on the entire plane of the protrusion 4, the slightly adhesive layer 13 may be scattered on the protrusion 4.

  An example of the material for the fine adhesion layer 13 having the above-described characteristics is an elastomer material. Elastomeric materials include rubber materials, thermosetting resin-based elastomer materials, and thermoplastic resin-based elastomer materials. The rubber material includes natural rubber and synthetic rubber (polybutadiene rubber, nitrile rubber, chloroprene rubber). Specific examples of elastomer materials include urethane rubber, nitrile rubber, silicone rubber, fluorine rubber, acrylic rubber, isoprene rubber, ethylene propylene rubber, chlorosulfonated polyethylene rubber, epichlorohydrin rubber, chloroprene rubber, styrene / butadiene rubber, butadiene rubber, And polyisobutylene rubber.

  The functional layer in the present invention needs to contain a resin component so that it can be temporarily fixed to a mold, but other functional components are selected according to necessary characteristics. That is, for example, if it is desired to provide only insulating properties, only a resin may be used, and if it is desired to provide heat dissipation, a heat conductive material such as metal or ceramics may be added. In this case, an alumina filler, a boron nitride filler, an aluminum nitride filler, or the like is preferably used.

In addition, when it is desired to provide an electromagnetic wave shielding effect, examples of the shielding material include metal foil, metal particles, conductive sheets, magnetic particles, and the like, and the material and shape are not particularly limited.
Among the above, it is preferable to use a metal foil in that it is easy to conduct and has a high electromagnetic shielding effect. On the other hand, a conductive sheet having pores is preferable in that the anchoring effect between the conductive sheet and the resin component of the functional layer and the sealing resin can be exhibited, so that the functional layer is difficult to peel from the sealing resin.

  Examples of the metal foil include, but are not limited to, aluminum foil, copper foil, and stainless steel foil. The thickness is not particularly limited, but in terms of the shielding effect, the effect increases as it becomes thicker, and if it is too thick, the moldability deteriorates, so 5 to 200 μm is preferable.

The electromagnetic wave shielding layer using the conductive sheet can be obtained by impregnating a sheet-like conductive material having pores with a resin. Alternatively, a resin sheet may be bonded to a conductive material by heat lamination or the like. On the bonding side with the sealing resin, it is preferable that the porous shape of the conductive layer is maintained because the sealing resin is easily impregnated and can be bonded more firmly. In the sheet in which the conductive layer having pores is formed in the resin layer, the conductive portion may be exposed on the surface, but it is preferable that the sheet is covered with a resin in order to prevent the conductive material from falling.
Examples of the sheet-like conductive material having pores include metal fiber sheets made of metal fibers. In addition, a graphene sheet that is a sheet having a graphite structure, a single-walled carbon nanotube in which one graphene sheet is formed into a cylindrical shape, a multi-walled carbon nanotube in which two or more graphene sheets are formed in a cylindrical shape, and a nanometer size Examples thereof include a carbon fiber sheet made of carbon nanocoils, carbon nanofibers, carbon nanohorns, carbon nanocapsules and the like in which carbon fibers having a diameter are spiraled within a diameter of 1000 nm.
Other examples include expanded metal made of a metal material such as stainless steel or aluminum. In the case of expanded metal, the shielding effect can be further improved by laminating a plurality of layers.

  The metal fiber sheet may be magnetic or non-magnetic as long as it is a metal material, but a metal having high permeability is preferable for shielding in a high frequency range. For example, examples of the metal fiber include stainless steel fiber, nickel fiber, copper fiber, aluminum fiber, silver fiber, gold fiber, and titanium fiber that can be processed into fine wires, but are conductive and capable of fine wire processing. Any metal can be used, and it is not limited to the type of metal. These metal fibers have better flexibility when formed on a sheet as the fiber diameter is thinner, and since the processing degree is higher and the price tends to be higher as the fiber diameter is thinner, it is usually 5 to 50 μm, preferably 30 μm or less. The range is selected according to the purpose. Further, the length of the metal fiber is not particularly limited, but in the case of producing a sheet by a wet papermaking method, the range of 2 to 10 mm is optimal from the viewpoint of formation configuration.

  The metal fiber sheet is preferably produced by a wet papermaking method, but can also be obtained by a method for producing a braid or woven fabric. When using wet papermaking, disperse and disperse one or more types of metal fibers cut into short fibers, add an appropriate amount of binder and auxiliary as needed, mix, and then dehydrate on the wire. Then, a press process and a drying process are obtained to form a sheet, which is then heated in a vacuum or a non-oxidizing atmosphere to thermally decompose and remove the binder. As the binder, for example, polyvinyl alcohol fiber, polyethylene fiber, polypropylene fiber, cellulose pulp and the like can be used, and as an auxiliary agent, a dispersant, a surfactant, an antifoaming agent, etc. that are generally used in a wet papermaking method. Can be used. As the non-oxidizing atmosphere, argon gas, nitrogen gas, hydrogen gas, or the like can be used.

  Moreover, a metal fiber sheet may sinter metal fibers for the purpose of electromagnetic wave shielding characteristics and quality improvement. Sintering may be performed at a temperature near the melting point of the metal fiber in a vacuum or non-oxidizing atmosphere, for example, at 1120 ° C. for 1 to 2 hours in the case of stainless steel fiber.

In the present invention, the metal fiber surface of the metal fiber sheet can be coated with a metal having a resistivity lower than that of the metal fiber. Thereby, desired conductivity and other characteristics can be obtained using a smaller amount of metal, and an excellent electromagnetic wave shielding effect is achieved.
The metal fiber surface can be coated by a known method such as an electrolytic plating method, an electroless plating method, a sputtering method, a vapor deposition method, a plasma spraying method, or the like. Moreover, you may make it coat | cover the surface of a metal fiber with a low-resistance metal simultaneously with sintering by coexisting and sintering the other low-resistance metal fiber which has melting | fusing point lower than a metal fiber. The sheet-like metal fiber sheet obtained by the above method preferably has a thickness of 10 to 200 μm.

The functional layer in this invention can be obtained by the method of apply | coating as it is to a transfer sheet.
As the transfer sheet, a polyethylene sheet, a polyethylene terephthalate sheet, a polypropylene sheet, or the like can be used.

Another method can be obtained by applying a resin to the transfer sheet and then transferring the resin on the transfer sheet to a functional material sheet such as the metal foil, metal fiber sheet, or carbon fiber sheet.
The electromagnetic wave shielding layer in the present invention can also be produced by directly applying a resin to a metal foil, a metal fiber sheet, a carbon fiber sheet, or the like. Application methods include air doctor coating, blade coating, knife coating, reverse coating, transfer roll coating, gravure roll coating, kiss coating, cast coating, spray coating, slot orifice coating, calendar coating, dip coating, die coating, etc. It can be formed by coating, relief printing such as flexographic printing, intaglio printing such as direct gravure printing and offset gravure printing.

In the functional layer in the present invention, the resin is preferably unevenly distributed in the thickness direction. FIG. 5 shows a schematic diagram of a cross section in the case where the functional layer is an electromagnetic wave shielding layer including a conductive sheet including the pores. As shown in FIG. 5, the state where the resin in the thickness direction is unevenly distributed means that a large amount of the resin 11 is contained in one surface A of the cross section of the electromagnetic wave shielding layer 3 and the conductive fiber 12 is present on the other surface B. It means a state that contains a lot.
The state where the functional layer is unevenly distributed in the thickness direction may be obtained by a single layer or may be obtained by laminating layers having a large amount of resin components.
The functional layer in which the resin in the thickness direction is unevenly distributed is a resin in which the resin is melted and spreads on the mold surface when the surface of the functional layer having a high resin impregnation ratio comes into contact with the heated mold surface. By being easy to increase the area, it is easily attached and excellent in work efficiency of temporary fixing. In addition, even when resin is injected into the mold at a high pressure, the problem that the position of the functional layer is displaced is less likely to occur, so the moldability of the resin-encapsulated semiconductor device is excellent, The production yield can also be improved without the occurrence of.

As the resin in the present invention, a thermosetting resin, a thermoplastic resin, or a rubber component capable of being B-staged can be used. Examples of the thermosetting resin include a polyimide resin, a maleimide resin, a melamine resin, a urea resin, a polyamide resin, a phenol resin, and an epoxy resin, and an epoxy resin is preferable in terms of heat resistance. As the epoxy resin, a commonly used epoxy resin for semiconductor encapsulation can be used, and an amine-cured epoxy resin, an acid anhydride-cured epoxy resin, or a novolak phenol-cured epoxy resin is preferable.
Furthermore, the faster the curing, the better the mold releasability, and it is desirable to add a curing accelerator. Various curing accelerators can be used, such as phosphorus compounds, tertiary amines, imidazoles, organic acid metal salts, Lewis acids, amine complex salts, and the like. From the viewpoint of excellent moisture resistance reliability, 2-ethyl-4-methylimidazole is preferable for imidazole compounds, and triphenylphosphine is preferable for phosphorus compounds.
Examples of the thermoplastic resin include polyamide, polycarbonate, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polysulfone, polyethersulfone, polyetheretherketone, polyamideimide, polyimide, and polyetherimide. . Rubber components include natural rubber, isoprene rubber, butadiene rubber, styrene / butadiene rubber, chloroprene rubber, nitrile rubber, polyisobutylene, ethylene propylene rubber, chlorosulfonated polyethylene, acrylic rubber, fluorine rubber, epichlorohydrin rubber, urethane rubber. And silicone rubber.
In addition, a small amount of a release agent such as silicone oil or wax that is effective for mold releasability can also be added.

[Method of manufacturing resin-encapsulated semiconductor device]
The method for manufacturing a resin-encapsulated semiconductor device of the present invention is a method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate made of a wiring substrate or a lead frame is encapsulated with an encapsulating resin using a mold. A method,
A step of transferring the functional layer temporarily fixed to the dummy frame to the mold forming surface and temporarily fixing the functional layer to the mold forming surface, and a semiconductor element fixed to the base made of a wiring board or a lead frame as the mold And a step of injecting a sealing resin into the mold and sealing the semiconductor element.
FIG. 6 is a diagram showing a process of transferring the functional layer temporarily fixed to the dummy frame to the mold forming surface and temporarily fixing the functional layer to the mold forming surface.
FIG. 6 shows an example of manufacturing a BGA (Ball Grid Array) semiconductor device by a single-side sealing method, and shows a mold for sealing by transfer molding. In FIG. 6A, the functional layer transfer body 1 described in detail above is placed on a lower mold 21 for transfer molding, and an upper mold 22 for transfer molding is located above. The hole P in FIG. 6 is a hole for supplying a sealing resin to be described later into the mold.
At this time, the functional layer transfer body 1 has the functional layer 3 temporarily fixed on the dummy frame 2. Temporary fixing to the upper mold 22 is facilitated by setting the glass transition point (Tg) of the resin component of the functional layer 3 to be lower than the mold temperature.

In FIG. 6B, the functional layer 3 in the functional layer transfer body 1 comes into contact with the upper mold 22 by fastening and fixing the upper mold 22 and the lower mold 21. Since the upper mold 22 is heated in advance, the resin of the functional layer 3 in contact with the upper mold 22 is melted and temporarily fixed to the upper mold 22. On the other hand, the surface of the functional layer 3 that is temporarily fixed to the dummy frame 2 is easily peeled off from the dummy frame 2 because of the lamination of the slightly adhesive layer.
FIG. 6C shows the functional layer 3 peeled off from the dummy frame 2 and temporarily fixed to the upper mold 22. Thereafter, the dummy frame 2 is removed from the lower mold 21.

  The functional layer transfer body 1 in FIG. 6 is an example in which the protrusions are provided only on one side, but may have protrusions 4 on both sides like the functional material transfer body 1 in FIG. As the mold in this case, a mold having a concave portion in which the protrusion 4 of the functional layer transfer body 1 fits in the upper mold 22 and the lower mold 21 is used. As described above, the functional layer transfer body 1 can be formed into an arbitrary shape according to the shape of the mold.

FIG. 8 is a diagram showing a process for manufacturing the resin-encapsulated semiconductor device of the present invention.
In FIG. 8A, a bonding wire 25 extends from the wiring board 23 and is connected to a semiconductor element 24 mounted on a base 23 made of a wiring board for signal connection. Under this base 23, there is a lower mold 21 for transfer molding, on which a wiring board 23 is placed. On the other hand, there is an upper mold 22 for transfer molding on the upper side, and a functional layer 3 made of a sheet in which a conductive layer having pores is formed in the resin layer is temporarily fixed on the molding surface of the upper mold 22. Has been.

Before the resin sealing, the upper mold 22 and the lower mold 21 are heated to a temperature of about 175 ° C. necessary for melting the sealing resin.
In FIG. 8B, after the upper mold and the lower mold are fastened and fixed with a force of several tens of tons, the sealing resin 27 pushed up in the direction of the arrow by the transfer unit 26 is liquefied at the mold temperature. And injected into the semiconductor element portion in the mold.
In FIG. 8C, the resin 27 injected into the semiconductor element portion seals the entire surface of the semiconductor element 24, and the functional layer 3 is embedded in the sealing resin 27.
In FIG. 8D, the upper mold 22 is removed, and the functional layer 3 is fixed to the upper part of the semiconductor element 24. Thereafter, a BGA package having a functional layer can be manufactured by taking out the molded product from the mold and connecting a metal ball to the back side of the base 23 (not shown) and cutting each package 28 into individual pieces.

The wiring board referred to in the present invention is made of gold, silver, platinum, copper, aluminum, zinc, nickel, tin, palladium, rhodium, and chromium on a substrate made of glass, plastic, silicon wafer, or a composite material thereof. A substrate provided with a metal wiring formed by laminating a metal layer containing at least one metal selected from the group and partially removing the metal layer of the laminate. The lead frame refers to a metal plate made of metal wiring formed by partially removing the metal layer. A semiconductor chip and other members are formed on the metal wiring on the wiring board and the lead frame.
As the sealing resin, a thermosetting resin such as an epoxy resin or a phenol resin can be used.

[Example 1]
A slurry composed of 95 parts by mass of a stainless steel fiber (material: SUS316L) having a fiber diameter of 8 μm and a fiber length of 3 mm and 5 parts by mass of a polyvinyl alcohol fiber having a dissolution temperature in water of 70 ° C. is made by a wet papermaking method, dewatering press, and heat drying Thus, a sheet having a rice basis weight of 95 g / m ² was obtained. The obtained sheet was subjected to thermocompression bonding under the conditions of a linear pressure of 300 kg / cm and a speed of 5 m / min using a heating roll having a surface temperature of 160 ° C. to obtain a stainless steel fiber thermocompression bonding sheet having a thickness of about 40 μm.
Next, 100 parts by mass of epoxy resin, 2 parts by mass of imidazole curing agent, 35 parts by mass of butadiene rubber, and 250 parts by mass of solvent are mixed to obtain a paint, and then the thickness after drying on a polyethylene terephthalate sheet is about 40 μm. As described above, coating was performed by blade coating to obtain a resin sheet.

Next, the resin surface coated with the resin sheet is placed on the surface of the stainless steel fiber thermocompression bonding sheet, and then placed in a resin layer having a thickness of about 70 μm by applying heat and pressure. Thus, an electromagnetic wave shielding layer made of a sheet having a conductive layer having pores was obtained.
A part of the electromagnetic wave shielding layer was cut out and the electromagnetic wave shielding layer was peeled off from the polyethylene terephthalate sheet, and then the cross section of the electromagnetic wave shielding layer was observed using a scanning electron microscope. As a result, one side of the electromagnetic wave shielding layer has a large number of conductive layers (stainless steel fiber thermocompression-bonding sheets) with pores, while the other side has a large amount of resin inside the conductive layer. Thus, it was confirmed that the impregnation state of the resin was unevenly distributed.

Next, a dummy frame made of a phenol resin as shown in FIG. A slightly adhesive layer made of acrylic rubber was applied to the projections of the dummy frame by potting to form a 10 μm thick adhesive layer. Next, the surface side having a large number of conductive layers of the electromagnetic wave shielding layer was temporarily fixed by being brought into contact with a slightly adhesive layer made of acrylic rubber formed on the protrusion of the dummy frame.
Next, as shown in FIGS. 6A, 6B, and 6C, the electromagnetic wave shielding layer was transferred to the molding surface of the upper mold, and the electromagnetic wave shielding layer was temporarily fixed to the upper mold. The electromagnetic wave shielding material was transferred by bringing the surface of the electromagnetic wave shielding layer in contact with the surface of the upper metal mold heated to about 175 ° C. into contact.

Next, the resin-encapsulated semiconductor device of the present invention was obtained as shown in FIG.
In addition, the molding material which consists of a general epoxy resin and a phenol resin was used as sealing resin.
The cross section of the resin-encapsulated semiconductor device after the above-described encapsulating resin was observed using a scanning electron microscope. As a result, it was confirmed that the electromagnetic wave shielding layer was adhered to the sealing resin.

DESCRIPTION OF SYMBOLS 1 Functional layer transfer body 2 Dummy frame 3 Functional layer 4 Protrusion part 11 Resin 12 Conductive fiber 13 Slight adhesion layer

Claims (6)

  A functional layer transfer body used for manufacturing a resin-encapsulated semiconductor device, wherein the functional layer transfer body has a dummy frame and a functional layer.   The functional layer transfer body according to claim 1, wherein the functional layer is temporarily fixed to a dummy frame.   The functional layer transfer body according to claim 1, wherein the functional layer is an electromagnetic wave shielding layer.   The functional layer transfer body according to claim 3, wherein the electromagnetic wave shielding layer is a sheet in which a conductive layer having pores is formed in a resin layer. A method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate made of a wiring board or a lead frame is sealed with a sealing resin using a mold,
A step of transferring the functional layer temporarily fixed to the dummy frame to the mold forming surface and temporarily fixing the functional layer to the mold forming surface, and a semiconductor element fixed to the base made of a wiring board or a lead frame as the mold A method for manufacturing a resin-encapsulated semiconductor device, comprising: a step of placing in a mold; and a step of injecting a sealing resin into a mold to seal a semiconductor element.   The resin-sealed mold according to claim 5, wherein the functional layer is unevenly distributed with a resin in a thickness direction, and a surface having a large resin ratio of the functional layer is temporarily fixed to a molding surface. A method for manufacturing a semiconductor device.

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