JP2017212806A - Power conversion circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power conversion circuit which has a plurality of input/output ports and which can transmit power between the ports; and which can inhibit unnecessary power transmission by comparatively simple control.SOLUTION: A power conversion circuit comprises a plurality of substrates 20 on which formed are half-bridge circuits 26, and the ungapped cores 22 around each of which a first winding wire connected with the half-bridge circuit 26 on at least one end winds and gapped cores 24 around each of which a second winding wire connected with the half-bridge circuit 26 on at least one end winds, in which the ungapped cores and the gapped cores lie on either sides so as to sandwich the half-bridge circuits 26, and the substrates are stacked in such a manner that the ungapped cores and the gapped cores lie alternately on the right and left. The neighboring two half-bridge circuits in the stacking direction compose an isolated DC/DC converter or a non-isolated DC/DC converter.SELECTED DRAWING: Figure 7

Description

  The present invention relates to a power conversion circuit.

  Conventionally, a power conversion circuit using a magnetically coupled reactor has been proposed.

  In Patent Document 1, there are DC ports between the positive and negative sides of the full bridge circuit on both sides and the center tap of the windings on both sides of the transformer. A total of four DC ports can be generated in one circuit, and insulation is provided between the left and right ports. A multi-port circuit configuration capable of performing transmitted power is described. The primary side conversion circuit and the secondary side conversion circuit are magnetically coupled by a transformer, and two input / output ports in the primary side conversion circuit are electrically connected by a reactor, and two input / outputs in the secondary side conversion circuit are connected. Ports are also electrically connected by a reactor. Non-insulated power transmission between the two input / output ports in the primary side conversion circuit and the secondary side conversion circuit is controlled by the on-time (duty ratio) of the semiconductor switch constituting the bridge circuit. Insulated power transmission between the side conversion circuit and the secondary side conversion circuit is controlled by the phase difference between the two conversion circuits.

JP 2011-193713 A

  By the way, in recent years, hybrid vehicles, plug-in hybrid vehicles, and the like have been required to diversify input / output for the purpose of improving fuel efficiency, and to improve redundancy and reduce costs by using power modules and sharing them. Specifically, in addition to 12V auxiliary equipment, 48V auxiliary equipment with relatively low current stress, and various power generation devices such as sunlight and thermoelectric conversion improve fuel efficiency and improve redundancy considering automatic driving. There is a need for a circuit configuration that can form a power supply system with various inputs and outputs arbitrarily and with high redundancy. .

  In a conventional multiport circuit, a multi-input / output power supply system with four or more ports can be configured by using a configuration in which one or more transformer cores are shared by three or more full bridge circuits and are mutually excited. However, since the magnetic flux excited by one full bridge circuit generates an electromotive voltage in the windings of other multiple full bridge circuits sharing the transformer core, the phase difference between any one of the full bridge circuits is shifted. In addition, there is a problem that power is simultaneously transmitted between a plurality of full bridge circuits.

  FIG. 17 shows a circuit configuration in which a total of four full bridge circuits of circuits 1 to 4 share a transformer core and are mutually excited. In the figure, a broken line A indicates that a transformer core is shared by four circuits.

  FIG. 18 shows the voltage across the transformer windings of circuits 1 to 4 in the circuit configuration of FIG. 18 (a) is the voltage across the transformer winding of circuit 1, FIG. 18 (b) is the voltage across the transformer winding of circuit 2, FIG. 18 (c) is the voltage across the transformer winding of circuit 3, and FIG. Indicates the voltage across the transformer winding of circuit 4. By controlling the phase difference between the circuits, a potential difference is generated between both terminals of the transformer to transmit power. For example, when the phase of the circuit 2 is advanced with respect to the circuit 1, power can be transmitted between the circuit 1 and the circuit 2, but at the same time, between the circuit 2 and the circuit 3 and between the circuit 2 and the circuit 4. In this case, a phase difference is generated, so that power is simultaneously transmitted from the circuit 2 toward the circuits 1, 3, and 4.

  In order to suppress such simultaneous power transmission, it is necessary to simultaneously modulate a total of n phase differences (n−1) between the full bridge circuits, but the control becomes complicated and unnecessary power transmission is required. If this occurs, the efficiency will decrease.

  An object of the present invention is to provide a power conversion circuit that has a plurality of input / output ports, can transmit power between ports, and can suppress unnecessary power transmission with relatively simple control.

  The present invention relates to a half-bridge circuit, a gapless core formed around the half-bridge circuit on the left and right sides and wound with a first winding having at least one end connected to the half-bridge circuit, and a half-bridge A plurality of substrates having a gaped core around which a second winding having at least one end connected to the circuit is wound are stacked so as to be alternately left and right, and insulated between two half-bridge circuits adjacent in the stacking direction. This is a power conversion circuit constituting a type DC / DC converter or a non-insulated DC / DC converter.

  In one embodiment of the present invention, both ends of the first winding and the second winding adjacent in the stacking direction are connected to the respective half-bridge circuits, and the first winding and the second winding are adjacent. The two half bridge circuits operate as a transformer that magnetically couples, and an isolated DC / DC converter is configured between two adjacent half bridge circuits.

  In another embodiment of the present invention, the half-bridge circuit includes a first capacitor connected between terminals, two semiconductor switches connected in parallel to each other, and two semiconductor switches connected in parallel to the first capacitor. And a second capacitor and a third capacitor connected in series with each other, and one end of the first winding is the first of the first and second half-bridge circuits adjacent in the stacking direction. Are connected to the midpoint of the two semiconductor switches of the half-bridge circuit, the other end is connected to the midpoint of the second and third capacitors of the first half-bridge circuit, and one end of the second winding is the second Are connected to the midpoint of the two semiconductor switches of the half-bridge circuit, and the other end is connected to the midpoint of the second and third capacitors of the second half-bridge circuit.

  Still another embodiment of the present invention includes a control circuit that controls a phase difference between two half-bridge circuits adjacent in the stacking direction.

  In still another embodiment of the present invention, the other ends of the first winding and the second winding adjacent in the stacking direction are not connected to the respective half-bridge circuits, and the other end of the first winding and the second winding are not connected. The other ends of the two windings are connected to each other by a first interlayer connection line, and the negative buses of two adjacent half-bridge circuits are connected to each other by a second interlayer connection line. The two windings operate as a reactor that connects two adjacent half-bridge circuits, and a non-insulated DC / DC converter is configured between the two adjacent half-bridge circuits.

  In yet another embodiment of the present invention, the half-bridge circuit includes a first capacitor connected between the terminals, two semiconductor switches connected in parallel to each other, and two semiconductors connected in parallel to the first capacitor. A second capacitor and a third capacitor connected in series to each other and connected in parallel to each other; one end of the first winding is a first of the first and second half-bridge circuits adjacent in the stacking direction; Are connected to the midpoint of the two semiconductor switches of the half-bridge circuit, and one end of the second winding is connected to the midpoint of the two semiconductor switches of the second half-bridge circuit. The other ends of the windings are connected to each other with an interlayer connection line.

  In yet another embodiment of the present invention, the half-bridge circuit includes a first capacitor connected between the terminals, two semiconductor switches connected in parallel to each other, and two semiconductors connected in parallel to the first capacitor. A plurality of stacked substrates each having a second capacitor and a third capacitor connected in series to each other and connected in parallel to the switch, the first winding and one end of the second winding are two of the half bridge circuit. A first circuit configuration in which the other end of the first winding and the second winding is connected to the middle point of the second and third capacitors; One end of the line and the second winding is connected to the midpoint of the two semiconductor switches of the half bridge circuit, and one of the other ends of the first winding and the second winding is the second and third It is connected to the middle point of the capacitor and either half is half-bridged. The second circuit configuration not connected to the circuit, and the first winding and one end of the second winding are connected to the midpoint of the two semiconductor switches of the half-bridge circuit, and the first winding and the second winding One of the third circuit configurations in which the other end of the line is not connected to the midpoint of the second and third capacitors.

  According to the present invention, an insulating DC / DC converter or a non-insulating DC / DC converter can be configured between two half-bridge circuits adjacent in the stacking direction by stacking a plurality of specific substrates. Arbitrary I / O ports can be added by increasing the number of boards to be stacked, and the system can be configured with minor changes to power systems that require different numbers of ports, rated voltage, and power. can do. In addition, according to the present invention, since the basic circuit is shared, the component cost is reduced.

It is a basic circuit block diagram of an embodiment. It is a block diagram of the power converter circuit of embodiment. It is phase difference control explanatory drawing of embodiment. It is a layout figure (plan view) of a basic circuit of an embodiment. It is a layout figure (sectional view) of the basic circuit of an embodiment. It is a layout figure (perspective view) of the basic circuit of an embodiment. It is sectional drawing of the laminated structure of embodiment. It is a disassembled perspective view of the laminated structure of embodiment. It is an equivalent circuit diagram of an embodiment. It is a layout diagram (plan view) of a basic circuit of another embodiment. It is sectional drawing of the laminated structure of other embodiment. It is the equivalent circuit schematic of other embodiment. It is a simulation circuit diagram. It is simulation phase difference control explanatory drawing. It is simulation result explanatory drawing (the 1). It is simulation result explanatory drawing (the 2). It is a block diagram of a conventional circuit. It is phase difference explanatory drawing of a conventional circuit.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Although the power converter circuit of this embodiment can be mounted in electric vehicles, such as a hybrid vehicle and an electric vehicle, for example, it is not limited to this.

  First, the basic principle of this embodiment will be described.

  In a circuit configuration in which a plurality of full bridge circuits share a transformer core and mutually excite each other, a multi-input / output power supply system can be configured, but the magnetic flux excited by one full bridge circuit Since an electromotive voltage is generated in the windings of a plurality of other full bridge circuits that are shared, if the phase difference between any one of the full bridge circuits is shifted, power is simultaneously transmitted between the other plurality of full bridge circuits.

  Therefore, in this embodiment, a basic circuit configuration including a half-bridge circuit is formed on one substrate, not a circuit configuration in which a transformer core is shared and mutually excited, and a plurality of the substrates are stacked and stacked in the stacking direction. Power transmission is performed between two half-bridge circuits adjacent to each other.

  In the basic circuit configuration, a core and a winding wound around the core are formed, and the winding functions as a transformer winding or a reactor winding depending on a connection method between the winding and the half-bridge circuit. When two windings adjacent in the stacking direction function as a transformer winding, the two adjacent half-bridge circuits are magnetically coupled by the transformer winding and function as a non-insulated DC / DC converter. By controlling the phase difference between two adjacent half-bridge circuits, power is transmitted between the two adjacent half-bridge circuits. At this time, each of the two adjacent half-bridge circuits has the same duty. On the other hand, when two windings adjacent in the stacking direction function as a reactor winding, the two adjacent half-bridge circuits are electrically connected by the reactor winding and function as an insulated DC / DC converter. By controlling the duty between two adjacent half-bridge circuits, power is transmitted between the two adjacent half-bridge circuits.

  By stacking an arbitrary number of substrates having a basic circuit configuration, an arbitrary number of two adjacent half-bridge circuits can be formed, and a multi-input / output power supply system with high redundancy can be obtained. In addition, since magnetic / electrical coupling is performed between two adjacent half-bridge circuits, even if the phase difference between any one of the half-bridge circuits is shifted, power transmission between the other half-bridge circuits is affected. Absent. That is, power transmission between adjacent half-bridge circuits can be controlled with mutually independent phase differences.

When an insulated DC / DC converter is configured by magnetically coupling two adjacent half-bridge circuits with a transformer, it is necessary to adjust the leakage inductance of the transformer to a desired value. In this embodiment, as a basic circuit configuration, two cores are formed so as to sandwich a half-bridge circuit, and one is a core without a gap and the other is a core with a gap. In other words, the basic circuit configuration
A core without a gap / half-bridge circuit / a core with a gap is formed, and windings are wound around the core without a gap and the core with a gap, respectively. When a plurality of these substrates are stacked, they are stacked alternately on the left and right. For example, if three stacked substrates are first, second, and third substrates, the core without gap of the first substrate and the core with gap of the second substrate are adjacent to each other, and the second substrate A core with a gap and a core without a gap of the third substrate are adjacent to each other. The core without gap of the first substrate, the core with gap of the second substrate and the core without gap of the third substrate are in contact with each other to form a magnetic circuit, and the core of the second substrate is gap Since the core is provided, the leakage inductance of the transformer is adjusted by adjusting the gap length.

  Hereinafter, this embodiment will be specifically described.

  FIG. 1 shows circuit configurations of three types of basic circuits used in this embodiment. 1A is a circuit configuration of the basic circuit A, FIG. 1B is a circuit configuration of the basic circuit B, and FIG.

  The basic circuit A (10A) is a half-bridge circuit and includes two semiconductor switches S1 and S2, three capacitors C1, C2, and C3, and two transformer one-side windings Tr1 and Tr2. Two semiconductor switches S1 and S2 are connected in series between the positive bus and the negative bus. A diode is connected in parallel to each of the semiconductor switches S1 and S2. Further, a capacitor C1 and capacitors C2, C3 connected in series with each other are connected between the positive electrode bus and the negative electrode bus, and the midpoint between the two semiconductor switches S1, S2 and the midpoint between the two capacitors C2, C3, Two transformer one-side windings Tr1 and Tr2 are connected between the two. The semiconductor switches S1 and S2 are, for example, MOS transistors, but are not limited thereto.

  The basic circuit B (10B) is also a half-bridge circuit, and includes two semiconductor switches S1, S2, three capacitors C1, C2, C3, one transformer one-side winding Tr1, and one reactor winding Re1. Configured. Two semiconductor switches S1 and S2 are connected in series between the positive bus and the negative bus. A diode is connected in parallel to each of the semiconductor switches S1 and S2. Further, a capacitor C1 and capacitors C2, C3 connected in series with each other are connected between the positive electrode bus and the negative electrode bus, and the midpoint between the two semiconductor switches S1, S2 and the midpoint between the two capacitors C2, C3, One transformer single-sided winding Tr1 is connected between them, and one end of the reactor winding Re1 is connected to the midpoint between the two semiconductor switches S1 and S2. The difference from the basic circuit A is the reactor winding Re1.

  The basic circuit C (10C) is also a half-bridge circuit, and includes two semiconductor switches S1, S2, three capacitors C1, C2, C3, and two reactor windings Re1, Re2. Two semiconductor switches S1 and S2 are connected in series between the positive bus and the negative bus. A diode is connected in parallel to each of the semiconductor switches S1 and S2. A capacitor C1 and capacitors C2 and C3 connected in series with each other are connected between the positive electrode bus and the negative electrode bus, and one ends of the reactor windings Re1 and Re2 are connected to the midpoints of the two semiconductor switches S1 and S2. The The difference from the basic circuit B is the reactor winding Re2.

  In this embodiment, these three types of basic circuits are magnetically / electrically connected to each other to constitute a multi-input / output power conversion circuit (power supply system) having an arbitrary number of DC ports.

  The combination of the basic circuit A, the basic circuit B, and the basic circuit C is arbitrary, the combination of only the basic circuit A, the combination of only the basic circuit B, the combination of only the basic circuit C, the combination of the basic circuit A and the basic circuit B, the basic These are combinations of circuit A and basic circuit C, combinations of basic circuit B and basic circuit C, combinations of basic circuit A, basic circuit B, and basic circuit C, and the like.

  FIG. 2 shows an example of a combination of the basic circuit A, the basic circuit B, and the basic circuit C. A combination using all of the basic circuits A to C.

  The circuit 10 is a half-bridge circuit having two semiconductor switches S1, S2 and three capacitors C1, C2, C3. The circuit 10 has a midpoint between the two semiconductor switches S1, S2 and a midpoint between the two capacitors C2, C3. A transformer one-side winding Tr is connected between them. The circuit 10 is a circuit in which one transformer one-side winding of the basic circuit A is omitted, and can be regarded as the basic circuit A.

  A circuit 10 </ b> A as a basic circuit A is connected to the circuit 10 adjacent to the circuit 10. The two transformer one-side windings Tr1 and Tr2 of the circuit 10A are magnetically coupled to the transformer one-side winding Tr of the circuit 10. The same applies to the circuit 11 described later.

  Further, a circuit 10B as a basic circuit B is connected to the circuit 10A adjacent to the circuit 10A. The transformer one-side winding Tr1 of the circuit 10B is magnetically coupled to the transformer one-side windings Tr1 and Tr2 of the circuit 10A.

  Further, a circuit 10C as a basic circuit C is connected to the circuit 10B adjacent to the circuit 10B. The reactor winding Re1 of the circuit 10C is shared as the reactor winding Re1 of the circuit 10B. The circuit 10B and the circuit 10C are electrically connected.

  A load or a power source is connected to each port of the circuits 10, 10A, 10B, and 10C. Assuming that the port voltages of the circuits are V1, V2, V3, and V4, respectively, power is transmitted between the circuit 10 and the circuit 10A by controlling the phase difference between the circuit 10 and the circuit 10A. Moreover, electric power is transmitted between the circuit 10A and the circuit 10B by controlling the phase difference between the circuit 10A and the circuit 10B. Further, power is transmitted between the circuit 10B and the circuit 10C by controlling the phase difference between the circuit 10B and the circuit 10C. Specifically, power is transmitted from the circuit 10 to the circuit 10A by setting the phase of the circuit 10 to the leading phase with respect to the circuit 10A, and conversely, the phase of the circuit 10A is set to the leading phase with respect to the circuit 10. Thus, power is transmitted from the circuit 10A to the circuit 10.

  Similarly, any number of direct current ports can be added. In the figure, a circuit 10B as a basic circuit B is connected to the circuit 10C adjacent to the circuit 10C, and a circuit 11 having the same circuit configuration as that of the circuit 10 is connected to the circuit 10B adjacent to the circuit 10B. The reactor winding Re1 of the circuit 10B is shared and electrically connected as the reactor winding Re2 of the circuit 10C. The transformer one-side winding Tr1 of the circuit 10B is magnetically coupled to the transformer one-side winding Tr of the circuit 11. When the port voltages of the circuit 10B and the circuit 11 are Vn−1 and Vn, respectively, power is transmitted between the circuit 10B and the circuit 11 by controlling the phase difference between the circuit 10B and the circuit 11.

  In the circuit of FIG. 2, since adjacent circuits such as the circuit 10 and the circuit 10A, the circuit 10A and the circuit 10B, and the circuit 10B and the circuit 11 are magnetically connected, the power between the adjacent circuits is independent from each other. It can be controlled by phase difference.

FIG. 3 shows phase difference calculation logic for controlling power transmission. It is the logic of the control circuit which controls electric power transmission between each circuit in the circuit of FIG. The control circuit can be composed of a CPU, ROM, RAM, and a microcomputer having an input / output interface. The control circuit calculates a phase difference command between the circuits in order to perform switching control of the two semiconductor switches of the half bridge circuit in each circuit. The phase difference is a phase difference between switching periods of two magnetically coupled half-bridge circuits, and is a phase difference between voltage waveforms at both ends of the transformer winding (see FIG. 18). The phase difference command values φ1, 2 ^* for power transmission between the circuit 10 and the circuit 10A are obtained from the deviation between the voltage command value V2 ^* and the voltage V2 of the circuit 10A by PI (proportional integration) using a proportional gain and an integral gain. ) Calculated by control. Phase difference command value for the power transmission between circuit 10A and the circuit 10B φ2,3 ^* from the deviation between the voltage command value V3 ^* and the voltage V3 of the circuit 10B, calculates the PI control using the proportional gain and the integral gain Is done. Similarly, the phase difference command value φn−1, n ^* for power transmission between the circuit 10B and the circuit 11 uses a proportional gain and an integral gain from the deviation between the voltage command value Vn ^* of the circuit 11 and the voltage Vn. It is calculated by the PI control. Here, an asterisk (*) indicates a command value.

  The control circuit may be constituted by a plurality of CPUs and each CPU may perform shared processing, or a part of the functions of the control circuit may be realized by dedicated hardware.

  Next, a specific configuration in which the basic circuit A to the basic circuit C are combined will be described. Taking FIG. 2 as an example, the circuit 10 and the circuit 10A are magnetically connected by the transformer one-side windings Tr, Tr1, Tr2, and transmit power, so that an insulated DC / DC converter is formed. The same applies to the circuit 10A and the circuit 10B. On the other hand, since the circuit 10B and the circuit 10C are electrically connected by the reactor winding Re1 and transmit power, a non-insulated DC / DC converter is formed. Therefore, in order to construct a multi-input / output power conversion circuit (power supply system) having an arbitrary number of DC ports by combining the basic circuit A to the basic circuit C, these isolated DC / DC converter and non-isolated DC / DC It is necessary to form a DC converter simply and efficiently.

  4 to 6 show layouts of basic circuits used in the present embodiment. 4 is a plan view, FIG. 5 is a cross-sectional view, and FIG. 6 is a perspective view.

  A gapless core 22 and a gapd core 24 are formed on one side of the rectangular substrate 20 (this is the front side), and a half bridge circuit 26 is formed between the gapless core 22 and the gapd core 24. The As described above, the half-bridge circuit 26 includes two semiconductor switches S1, S2 and three capacitors C1, C2, C3. In addition, the leg portions of the core 22 with no gap and the core 24 with gap are formed on the other surface side of the substrate 20 (this is the back surface side). A winding 28 is wound around the leg of the core 22 without gap on the back side of the substrate 20, and a winding 30 is wound around the leg of the core 24 with gap. One end of the winding 28 is connected to the midpoint of the two semiconductor switches S1, S2, and the other end is connected to the midpoint of the capacitors C2, C3. One end of the winding 30 is also connected to the midpoint of the two semiconductor switches S1, S2, and the other end is connected to the midpoint of the capacitors C2, C3. Therefore, the layout of the basic circuit shown in FIGS. 4 to 6 can realize the basic circuit A of FIG. 1 when the windings 28 and 30 function as the transformer single-side windings Tr1 and Tr2.

  On the other hand, by separating the contact 32 between the winding 28 and the half-bridge circuit 26, the winding 28 can function as the reactor winding Re1. At this time, the layout of the basic circuit shown in FIGS. 4 to 6 can realize the basic circuit B of FIG.

  Further, by separating the contact 32 between the winding 28 and the half-bridge circuit 26 and the contact 34 between the winding 30 and the half-bridge circuit 26, the winding 28 and the winding 30 can function as the reactor windings Re1 and Re2. . At this time, the layout of the basic circuit shown in FIGS. 4 to 6 can realize the basic circuit C of FIG.

  7 and 8 show configuration examples in which a plurality of basic circuit layouts are stacked. 7 is a sectional view, and FIG. 8 is an exploded perspective view.

  The basic circuit layout is arranged in the first layer, the second layer is such that the back side of the first layer and the front side of the second layer are opposed to each other, and the no-gap core 22 in the first layer and the gap in the second layer The stacked cores 24 are laminated so that the cores with the gaps 24 face each other and the cores with gaps in the first layer and the cores with gaps in the second layer face each other. That is, the first layer and the second layer are laminated so that the left and right are reversed when the longitudinal direction of the substrate 20 is the left and right direction. Accordingly, the leg on the back side of the first gapless core 22 is in contact with the surface of the second layer with gap 24 and the leg on the back side of the first layer with gap 24 is in the second layer. It abuts against the surface of the core 22 without a gap. The third layer is laminated in the same direction as the first layer. That is, in the third layer, the back surface side of the second layer and the front surface side of the third layer face each other, and the core 22 with no gap in the second layer and the core 24 with gap in the third layer face each other. The gap-provided core 24 and the third-layer gap-provided core 24 are laminated so as to face each other. That is, the second and third layers are laminated so that the left and right sides are reversed. The leg on the back side of the second gapless core 22 is in contact with the surface of the core 24 with the gap of the third layer, and the leg on the back side of the core 24 with the gap of the second layer has no gap on the third layer. It contacts the surface of the core 22. The fourth layer is laminated in the same direction as the second layer. In the same manner, the n-1 layer and the n layer are laminated so that the left and right sides are reversed.

  When attention is paid to the portion 40 of the fourth-layer gapless core 22 and the fifth-layer gapless core 24, the winding 28 wound around the leg portion of the fourth-layer gapless core 22 is a transformer one-side winding Tr1. Since the winding 30 wound around the leg portion of the fifth layer gapd core 24 that is opposed to the fourth layer gapless core 22 also functions as the transformer one-side winding Tr2. These function as a magnetic coupling circuit between the circuit 10 and the circuit 10A in FIG. 2 or as a magnetic coupling circuit between the circuits 10A.

  FIG. 9 shows an equivalent circuit of the fourth and fifth layer portions 40 (see FIG. 7). The transformer half-side winding Tr1 consisting of the winding 28 is connected to the fourth-layer half-bridge circuit 26, and the transformer half-side winding Tr2 consisting of the winding 30 is connected to the fifth-layer half-bridge circuit 26. An insulated DC / DC converter is formed between the fourth and fifth layers. That is, the fourth-layer gapless core 22, the fifth-layer gapless core 24, and the sixth-layer gapless core 22 come into contact with each other to form a magnetic circuit, and the fourth-layer winding 28. The fifth layer of winding 30 constitutes a transformer. By adjusting the gap length of the fifth layer gapd core 24, the amount of leakage inductance of the transformer can be adjusted.

  10 and 11 show another configuration example in which a plurality of basic circuit layouts are stacked. 10 is a plan view, and FIG. 11 is a cross-sectional view.

  FIG. 10 is a layout diagram of the basic circuits of the second and third layers. In the second layer, the winding 28 is disconnected at the contact 32 between the winding 28 and the half-bridge circuit 26. In the third layer, the winding 30 is cut off at the contact 34 between the winding 30 and the half-bridge circuit 26. Then, the second layer winding 28 and the third layer winding 30 are connected by an interlayer connection line 36, and the second layer negative electrode and the third layer negative electrode are connected by an interlayer connection line 38.

  In FIG. 11, the leg part on the back surface side of the second gapless core 22 and the surface of the third layer gapd core 24 abut. However, a reactor gap 42 is formed on one of the legs on the back side of the second-layer gapless core 22, and a space (gap) is formed between the third-layer gap-provided core 24. One end of the winding 28 wound around the leg portion of the second gapless core 22 and one end of the winding 30 wound around the leg portion of the third layer gapd core 24 are connected to the interlayer connection line 36. Connected with. The other end of the second layer winding 28 is connected to the midpoint of the semiconductor switches S1 and S2 of the second layer half bridge circuit 26, and the other end of the third layer winding 30 is the third layer half bridge circuit. It is connected to the midpoint of 26 semiconductor switches S1, S2.

  FIG. 12 shows an equivalent circuit of the second and third layer portions 50 in FIG. Reactor winding Re1 consisting of winding 28 is connected to second-layer half-bridge circuit 26, and reactor winding Re1 consisting of winding 30 is connected to third-layer half-bridge circuit 26, and second-layer negative electrode bus And the negative electrode bus of the third layer are connected by an interlayer connection line 38. As a result, a non-insulated DC / DC converter is formed between the second layer and the third layer.

  As described above, by laminating a plurality of layers of the basic circuit layout, an insulation type DC / DC converter as shown in FIG. 9 and a non-insulation type DC / DC as shown in FIG. A converter is realized. 9 corresponds to a magnetic connection such as between the circuit 10A and the circuit 10B, and FIG. 12 corresponds to an electrical connection such as between the circuit 10B and the circuit 10C. Therefore, the circuit configuration shown in FIG. 2 is realized by laminating a plurality of layers of the basic circuit layout and appropriately connecting them with interlayer connection lines.

  Next, the computer simulation result of this embodiment is shown. FIG. 13 shows a circuit configuration used for the simulation. An example of an isolated DC / DC converter in which the circuit 10A is magnetically connected to the circuit 10, the second circuit 10A is magnetically connected to the circuit 10A, and the circuit 11 is magnetically connected to the second circuit 10A. It is. Since the circuit 10A has the configuration of the basic circuit A, and the circuits 10 and 11 can be equated with the basic circuit A as described above, FIG. 13 shows an example in which four basic circuits A are magnetically connected. The inter-terminal voltage of the circuit 10 is V1in, the inter-terminal voltage of the circuit 10A is V2out, the inter-terminal voltage of the second circuit 10A is V3out, the inter-terminal voltage of the circuit 11 is V4out, the power supply is connected to the circuit 10 and the circuit 10A A simulation of pulling a load from the second circuit 10A and the circuit 11 was performed.

Figure 14 is a phase difference between the circuit 10 and the circuit 10A Fai1,2 ^*, the phase difference between the circuit 10A and the second circuit 10A Fai2,3 ^*, the phase difference between the second circuit 10A and the circuit 11 Fai3,4 The calculation logic of ^* is shown. The phase difference φ1, 2 ^* is calculated by PI control of the difference between the voltage command value V2 and the voltage V2 (V2out) of the circuit 10A. The same applies to other phase differences.

FIG. 15 shows the result of the simulation. The loads of the circuit 10A, the second circuit 10A, and the circuit 11 are P2, P3, and P4, respectively, and the time changes of the load, output voltage, and phase difference command of each circuit are shown. The load P2 increases in the period I and becomes constant in the periods II and III. The load P3 is zero in the periods I and II, increases in the period III, and becomes constant in the periods IV and V. The load P4 is zero in the periods I to IV, increases in the period V, and becomes constant in the period VI. The output voltage is a port output voltage of the circuit 10A, the second circuit 10B, and the circuit 11. Phase difference command the phase difference command Fai1,2 ^* between circuit 10 and circuit 10A, the circuit 10A and the phase difference command Fai2,3 ^* between the second circuit 10A, during the second circuit 10A and the circuit 11 Phase difference command φ3, 4 ^* .

  FIG. 16 shows temporal changes of the voltage across the transformer and the transformer current of the circuit 10, the circuit 10A, the second circuit 10A, and the circuit 11 near the certain timing (20.00 msec) in FIG. The voltage across the transformer and the transformer current of the circuit 10 are V1 and i1, the voltage across the transformer of the circuit 10A and the transformer current are V2 and i2, the voltage across the transformer and the transformer current of the second circuit 10A are V3 and i3, and the transformer across the circuit 11 Let the voltage and transformer current be V4 and i4. There is a phase difference between V2, V3, and V4 with a large delay amount in this order with respect to the voltage V1 across the transformer of the circuit 10. This is also apparent from the magnitude relationship of the phase difference commands in FIG. 15 at this timing.

In the period I, the load P2 of the circuit 10A increases, and the phase difference φ1, 2 ^* increases so as to keep the output voltage V2out of the circuit 10A constant.

In the period II, the load P2 of the circuit 10A is constant, and the phase differences φ1, 2 ^* are also constant.

In the period III, the load P3 of the second circuit 10A increases, and the phase difference φ2, 3 ^* increases so as to keep the output voltage V3out of the second circuit 10A constant. Since the load P3 is supplied from the circuit 10 to the second circuit 10A via the circuit 10A, the phase difference φ1, 2 ^* also increases.

In the period V, the load P4 of the circuit 11 increases, and the phase difference φ3, 4 ^* increases so as to keep the output voltage Vout4 of the circuit 11 constant. Since the load P4 is supplied from the circuit 10 to the circuit 11 via the circuit 10A and the second circuit 10A, the phase differences φ1, 2 ^* and the phase differences φ2, 3 ^* also increase. After all, the phase difference φ1,2 ^*, φ2,3 ^*, φ3,4 ^* is increased.

  In the load fluctuation (increase in P2, P3, P4) in each period, the output voltages V2out, V3out, V4out of each circuit are kept constant, power can be transmitted only by simple phase difference control, and When the phase difference φ1, 2 * is increased, unnecessary power is not transmitted to the second circuit 10A or the circuit 11, and unnecessary power transmission can be suppressed.

  10A, 10B, 10C Basic circuit, 20 substrates, 22 no gap core, 24 gap core, 26 half bridge circuit, 28 windings (no gap core side), 30 windings (gap core side), 32, 34 contacts , 36, 38 Interlayer connection lines, 40, 50 Layered structure.

Claims (7)

Half-bridge circuit,
A gapless core formed by winding a first winding having at least one end connected to the half bridge circuit, and a first bridge having at least one end connected to the half bridge circuit. A core with a gap in which two windings are wound;
A power conversion circuit in which a plurality of substrates are stacked so that left and right are alternately arranged, and an insulated DC / DC converter or a non-insulated DC / DC converter is configured between two half-bridge circuits adjacent in the stacking direction. The power conversion circuit according to claim 1,
Both ends of the first winding and the second winding adjacent to each other in the stacking direction are connected to the respective half bridge circuits, and the two half bridge circuits adjacent to the first winding and the second winding are magnetically coupled. A power conversion circuit that operates as a transformer that forms an isolated DC / DC converter between two adjacent half-bridge circuits. The power conversion circuit according to claim 2,
Half-bridge circuit
A first capacitor connected between the terminals;
Two semiconductor switches in series with each other connected in parallel to the first capacitor;
A second and a third capacitor in series with each other, connected in parallel to the two semiconductor switches;
With
One end of the first winding is connected to the midpoint of two semiconductor switches of the first half-bridge circuit of the first and second half-bridge circuits adjacent in the stacking direction, and the other end is the first One end of the second winding is connected to the middle point of the two semiconductor switches of the second half bridge circuit, and the other end is connected to the second point. A power conversion circuit connected to the midpoint of the second and third capacitors of the half-bridge circuit. In the power converter circuit according to any one of claims 2 and 3,
A power conversion circuit comprising a control circuit that controls a phase difference between two half-bridge circuits adjacent in the stacking direction. The power conversion circuit according to claim 1,
The other ends of the first winding and the second winding adjacent to each other in the stacking direction are not connected to the respective half-bridge circuits, and the other end of the first winding and the other end of the second winding are the first. Are connected to each other by two interlayer connection lines, and the negative buses of two adjacent half-bridge circuits are connected to each other by a second interlayer connection line, and the first and second windings are adjacent to each other. A power conversion circuit that operates as a reactor for connecting a bridge circuit and constitutes a non-insulated DC / DC converter between two adjacent half-bridge circuits. The power conversion circuit according to claim 5,
Half-bridge circuit
A first capacitor connected between the terminals;
Two semiconductor switches in series with each other connected in parallel to the first capacitor;
A second and a third capacitor in series with each other, connected in parallel to the two semiconductor switches;
With
One end of the first winding is connected to the midpoint of two semiconductor switches of the first half-bridge circuit of the first and second half-bridge circuits adjacent in the stacking direction. One end is connected to the middle point of two semiconductor switches of the second half-bridge circuit, and the other end of the first winding and the second winding is connected to each other by an interlayer connection line. The power conversion circuit according to claim 1,
Half-bridge circuit
A first capacitor connected between the terminals;
Two semiconductor switches in series with each other connected in parallel to the first capacitor;
A second and a third capacitor in series with each other, connected in parallel to the two semiconductor switches;
With
Each substrate that is stacked more than one
One end of the first winding and the second winding is connected to the midpoint of the two semiconductor switches of the half bridge circuit, and the other end of the first winding and the second winding is the second and third. A first circuit configuration connected to the midpoint of the capacitor;
One end of the first winding and the second winding is connected to the midpoint of the two semiconductor switches of the half-bridge circuit, and one of the other ends of the first winding and the second winding is the second. And a second circuit configuration that is connected to the midpoint of the third capacitor and one of the other is not connected to the half-bridge circuit;
One end of the first winding and the second winding is connected to the midpoint of the two semiconductor switches of the half bridge circuit, and the other end of the first winding and the second winding is the second and third. A power conversion circuit which is one of the third circuit configurations not connected to the middle point of the capacitor.