JP2017208393A - Solid-state laser device and method for manufacturing solid-state laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To put the output of laser light generated from a solid laser device into an optimum state by making installation intervals of an optical system adjustable.SOLUTION: A solid-state laser device 100 comprises: a semiconductor laser element 1 which emits excitation light; a light collection optical system 2 which collects excitation light; a solid-state laser medium 3 excited by the collected excitation light and generating laser light; a holding member 4 including a holding part 4a for holding the light collection optical system 2 and a placement part 4b for holding the solid-state laser medium 3; a first substrate 11 on which the semiconductor laser element 1 is mounted; and a second substrate 12 on which the holding member 4 is placed and on one surface 12a of which the first substrate 11 is mounted. The holding member 4 is placed on the surface 12a of the second substrate 12 so that the light collection optical system 2 faces the semiconductor laser element 1, and fixed by a fixing material 31. The solid-state laser medium 3 is placed on a placement part 4b so that an incidence plane 3a faces the semiconductor laser element 1 via the light collection optical system 2, and fixed by a second fixing material 32.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a structure and a manufacturing method of a solid-state laser device that generates a laser beam by exciting a solid-state laser medium with excitation light emitted from a semiconductor laser element.

  The excitation light emitted from the semiconductor laser element is condensed by a condensing optical system such as a lens and incident on the solid-state laser medium to excite the solid-state laser medium and laser light (oscillation light) from the solid-state laser medium. There is a solid-state laser device that generates In this type of solid-state laser device, for example, as disclosed in Patent Documents 1 to 3, a semiconductor laser element, a condensing optical system, and a solid-state laser medium are arranged in order in the optical axis direction of the excitation light, and a package or It is fixed to the substrate.

  Patent Document 1 discloses a small and simple structure of a solid-state laser device. Specifically, reflecting mirrors for optical resonators are formed on both end faces of a YAG rod (solid laser medium). Then, arrange the semiconductor laser chip (semiconductor laser element), SELFOC (registered trademark) lens (condensing optical system), and YAG rod so that the optical axes are accurately aligned in the package, and use UV curable epoxy resin to make the package It is fixed.

  In Patent Document 2 and Patent Document 3, in order to optimize the output (light quantity) of laser light (oscillation light) generated from a solid-state laser device, a semiconductor laser element, a condensing optical system, and a solid-state laser medium are provided. A structure and method for adjusting the optical axes to coincide with each other are disclosed.

  In Patent Document 2, the solid-state laser device is composed of an excitation unit and a resonator unit. The excitation unit includes a semiconductor laser, a fiber lens (condensing optical system), a condensing lens (condensing optical system), a semiconductor laser holder, and an optical system holder. The semiconductor laser holder holds the semiconductor laser and the fiber lens. The optical system holder holds the semiconductor laser holder and the condenser lens. The resonator unit is composed of a solid-state laser medium, a nonlinear optical element, and a resonator holder. The resonator holder holds the solid-state laser medium and the nonlinear optical element. After each unit is assembled and the optical axis is adjusted, the units are assembled and the optical axis is adjusted. Finally, the excitation unit holding the resonator unit is mounted on the metal substrate via the base plate. The

  In Patent Document 3, a laser diode (semiconductor laser element) is mounted on a substrate placed on a table of a bonding apparatus, and excitation light emitted from the laser diode is measured by a measuring device, and based on the measurement result. Position the measuring device. Next, a solid-state laser oscillation element (solid-state laser medium) with a reflecting surface chucked by a bonding tool is placed on the substrate between the laser diode and the measuring device. Next, move the table in the Y direction perpendicular to the optical axis of the excitation light, move the bonding tool in the Z direction (vertical direction) by the lifting mechanism, or rotate the bonding tool around the Z axis with a servo motor I will let you. Then, the solid-state laser oscillation element is positioned at the position where the amount of excitation light measured by the measuring device is maximized, and the UV curable resin applied to the solid-state laser oscillation element is cured, and the solid-state laser oscillation element is fixed on the substrate. To do.

  However, in order to optimize the output of the laser light (oscillation light) generated from the solid-state laser device, the optical axes of the optical systems such as the semiconductor laser element, the condensing optical system, and the solid-state laser medium are matched. It is necessary to adjust the installation interval of these optical systems.

JP-A-3-3378 JP 2001-210899A Japanese Patent No. 3601645

  An object of the present invention is to make it possible to adjust an installation interval of an optical system so that an output of laser light generated from a solid-state laser device is in an optimum state.

  A solid-state laser device according to the present invention includes a semiconductor laser element that emits excitation light, a condensing optical system that condenses the excitation light, and a solid-state laser medium that generates laser light when excited by the condensed excitation light. A holding member having a holding unit for holding the condensing optical system and a mounting unit on which the solid laser medium is mounted, a first substrate on which the semiconductor laser element is mounted, and a first substrate on one surface And a second substrate on which the holding member is placed. The holding member is placed on one surface of the second substrate so that the condensing optical system faces the semiconductor laser element, and is fixed to the one surface of the second substrate by the first fixing material. The laser medium is mounted on the mounting portion of the holding member and fixed to the mounting portion by the second fixing material so that the incident surface on which the excitation light is incident faces the semiconductor laser element via the condensing optical system. Has been.

  According to the above configuration, the first substrate on which the semiconductor laser element is mounted is mounted on one surface of the second substrate, and the condensing optical system is held by the holding portion of the holding member. Then, the holding member is placed on one surface of the second substrate so that the condensing optical system faces the semiconductor laser element, and the holding member is moved in the optical axis direction of the excitation light emitted by the semiconductor laser element. Thus, the installation interval between the semiconductor laser element and the condensing optical system can be adjusted. In addition, the solid laser medium is mounted on the mounting portion of the holding member so that the incident surface of the solid laser medium faces the semiconductor laser element via the condensing optical system, and the solid laser is disposed in the optical axis direction of the excitation light. By moving the medium, the installation interval of the solid-state laser medium with respect to the semiconductor laser element and the condensing optical system can be adjusted. Then, by adjusting the installation intervals of the semiconductor laser element, the condensing optical system, and the solid-state laser medium, it is possible to improve the output of laser light generated from the solid-state laser device to an optimum state.

  In the present invention, in the solid-state laser device, the holding member may be placed on one surface of the second substrate and slidable in the optical axis direction of the excitation light.

  In the present invention, in the solid-state laser device, the solid-state laser medium may be placed on the placement portion of the holding member and slidable in the optical axis direction of the excitation light.

  Further, in the present invention, in the solid-state laser device, the condensing optical system includes a collimator lens that converts the excitation light emitted from the semiconductor laser element into parallel light, and the parallel light emitted from the collimator lens is incident on the solid-state laser medium. You may comprise from the condensing lens which condenses on a surface.

  The solid-state laser device manufacturing method according to the present invention includes a first step of mounting a semiconductor laser element on a first substrate, a second step of mounting the first substrate on one surface of the second substrate, and a condensing optical system. A third step of holding the system by the holding portion of the holding member, a fourth step of placing the holding member on one surface of the second substrate so that the condensing optical system faces the semiconductor laser element, and excitation light A fifth step of mounting the solid laser medium on the mounting portion of the holding member so that the incident surface of the solid laser medium on which the laser beam enters is opposed to the semiconductor laser element via the condensing optical system; A sixth step of fixing the solid laser medium to the surface of the two substrates with the first fixing material and a seventh step of fixing the solid laser medium to the mounting portion of the holding member with the second fixing material are included.

  According to the above method, after the first to third steps are executed, the holding member is moved in the optical axis direction of the excitation light from the semiconductor laser element after the fourth step is executed and before the sixth step is executed. Thus, the installation interval between the semiconductor laser element and the condensing optical system can be adjusted. In addition, after the fifth step is performed and before the seventh step is performed, the solid laser medium is moved in the optical axis direction of the excitation light, so that the installation interval of the solid laser medium with respect to the semiconductor laser element and the condensing optical system is increased. Can be adjusted. Then, by adjusting the installation intervals of the semiconductor laser element, the condensing optical system, and the solid-state laser medium, it is possible to improve the output of laser light generated from the solid-state laser device to an optimum state.

  In the present invention, in the method for manufacturing a solid-state laser device, the sixth step is performed after at least the first to fifth steps, and in the sixth step, the pumping light is emitted from the semiconductor laser element to emit from the solid-state laser medium. The generated laser beam is measured by a measuring device, and based on the measurement result of the measuring device, the holding member is slid in the optical axis direction of the excitation light on one surface of the second substrate, and the holding member is positioned. Thereafter, the holding member may be fixed to one surface of the second substrate by the first fixing material.

  Further, in the present invention, in the method for manufacturing a solid-state laser device, the seventh step is executed after at least the first to fifth steps, and in the seventh step, the solid-state laser is emitted by emitting excitation light from the semiconductor laser element. The laser beam generated from the medium is measured by the measuring device, and the solid laser medium is slid in the optical axis direction of the excitation light on the mounting portion of the holding member based on the measurement result of the measuring device. Then, the solid-state laser medium may be fixed to the mounting portion by the second fixing material.

  According to the present invention, the installation interval of the optical system can be adjusted, and the output of the laser beam generated from the solid-state laser device can be brought into an optimum state.

It is a side view of the solid-state laser apparatus by embodiment of this invention. It is a top view of the solid-state laser apparatus of FIG. It is a schematic diagram of the optical system of the solid-state laser apparatus of FIG. It is the figure which showed the assembly procedure of the solid-state laser apparatus of FIG. It is the figure which showed the position adjustment procedure of the optical system of the solid-state laser apparatus of FIG. It is the figure which showed the position adjustment mechanism of the optical system of the solid-state laser apparatus of FIG. It is the figure which showed the position adjustment mechanism of the optical system of the solid-state laser apparatus of FIG. FIG. 2 is a schematic diagram showing the relationship between the position of the optical system of the solid-state laser device of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

  First, the configuration of a solid-state laser device 100 according to an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a side view of the solid-state laser device 100. FIG. 2 is a plan view of the solid-state laser device 100. FIG. 3 is a schematic diagram of an optical system of the solid-state laser device 100.

  The solid-state laser device 100 is a so-called microchip laser module. As shown in FIGS. 1 and 2, the solid-state laser device 100 includes a semiconductor laser element 1, a condensing optical system 2, a solid-state laser medium 3, a holding member 4, a first substrate 11, a second substrate 12, and a Peltier element 5. , And a cover 6 or the like. Among these, the semiconductor laser element 1, the condensing optical system 2, and the solid-state laser medium 3 are optical systems.

  The semiconductor laser element 1 emits excitation light (laser light) for exciting the solid-state laser medium 3 in the Y direction. The excitation light emitted from the semiconductor laser element 1 diffuses in the FAST axis direction (Z direction in FIG. 1). In this example, a plurality of semiconductor laser elements 1 are provided in order to ensure a large output of pumping light (FIG. 2).

  The condensing optical system 2 includes a collimating lens 21 and a condensing lens 22. As shown in FIG. 3, the collimating lens 21 refracts the excitation light emitted from the semiconductor laser element 1 in the FAST axis direction (Z direction) to make parallel light. In FIG. 3, only the excitation light emitted from the semiconductor laser elements 1 at both ends is indicated by broken-line arrows. In the pumping light emitted from the other semiconductor laser elements 1, only the front vicinity of the semiconductor laser element 1 is indicated by a broken line. The same applies to FIG. 8 described later.

  The condensing lens 22 is composed of, for example, a cylindrical lens. The condensing lens 22 refracts the parallel light emitted from the collimating lens 21 in the X direction and condenses it on the incident surface 3 a of the solid-state laser medium 3. As another example, for example, a convex lens may be used as the condenser lens 22.

  The optical axes Q of the collimating lens 21 and the condenser lens 22 are parallel to the radiation direction Y of the excitation light from the semiconductor laser element 1. Hereinafter, the Y direction is referred to as the optical axis direction Y.

  The solid laser medium 3 is excited when the excitation light condensed by the condensing optical system 2 enters from the incident surface 3a. The solid-state laser medium 3 radiates laser light (oscillation light) in the optical axis direction Y from the emission surface 3b shown in FIGS. Note that a film that transmits light having the wavelength of the excitation light and reflects light having the fundamental wavelength of the solid-state laser medium 3 is formed on the incident surface 3a (not shown). Further, a film that reflects, for example, 50% of light having the fundamental wavelength of the solid-state laser medium 3 is formed on the emission surface 3b (not shown). These films are formed on separate members such as two pieces of glass instead of being directly formed on both surfaces 3a and 3b of the solid laser medium 3, and the separate members are formed on the incident side and the emission side of the solid laser medium 3, respectively. You may arrange. Incidentally, when Nd: YAG is used as the solid-state laser medium 3, the fundamental wavelength of the solid-state laser medium 3 is 1064 nm.

  The holding member 4 includes a holding unit 4 a that holds the two lenses 21 and 22 of the condensing optical system 2 and a mounting unit 4 b that mounts the solid-state laser medium 3.

  A plurality of semiconductor laser elements 1 are mounted on one surface (upper surface in FIG. 1) 11a of the first substrate 11. The plurality of semiconductor laser elements 1 are arranged in the width direction X on the surface 11a of the first substrate 11 (FIGS. 2 and 3). The width direction X is perpendicular to the optical axis direction Y and the up-down direction Z. The optical axis direction Y is also perpendicular to the vertical direction Z.

  The second substrate 12 is made of a metal substrate such as aluminum. The Peltier element 5 and the first substrate 11 are mounted on one surface (upper surface in FIG. 1) 12a of the second substrate 12. The holding member 4 is placed on the surface 12 a of the second substrate 12.

  The holding member 4 is placed on the surface 12a of the second substrate 12 so that the collimating lens 21 of the condensing optical system 2 held by the holding unit 4a faces the semiconductor laser element 1 mounted on the first substrate 11. Has been. The holding member 4 and the second substrate 12 are fixed by a first fixing material 31. The first fixing member 31 is made of, for example, a UV (ultraviolet) adhesive. As another example, the holding member 4 and the second substrate 12 may be fixed by, for example, an epoxy resin adhesive or solder.

  The solid laser medium 3 is placed on the placement portion 4 b of the holding member 4 so that the incident surface 3 a faces the condenser lens 22. The solid laser medium 3 and the mounting portion 4 b of the holding member 4 are fixed by a second fixing material 32. The second fixing member 32 is made of, for example, a UV adhesive. As another example, the solid-state laser medium 3 may be fixed to the mounting portion 4b with, for example, an epoxy resin adhesive.

  The collimating lens 21 and the condensing lens 22 are fixed to the holding portion 4 a of the holding member 4 by the third fixing material 33. The third fixing member 33 is made of, for example, a UV adhesive. As another example, the collimating lens 21 and the condensing lens 22 may be fixed to the holding portion 4a with, for example, an epoxy resin adhesive.

  The cover 6 is fixed to the surface 12 a of the second substrate 12 and covers the parts 1 to 3 of the optical system, the holding member 4, the Peltier element 5, and the first substrate 11. An exit window 6 a is provided on one side of the cover 6 so as to face the exit surface 3 b of the solid-state laser medium 3. Laser light emitted from the emission surface 3 b of the solid-state laser medium 3 is emitted to the outside through the emission window 6 a of the cover 6.

  The semiconductor laser element 1 and the Peltier element 5 are electrically connected to an external control device (not shown) via electrical wiring and external wiring formed on the substrates 11 and 12 (detailed illustration is omitted). The control device controls driving of the semiconductor laser element 1 and the Peltier element 5. The Peltier element 5 is used for appropriately controlling the temperature of the semiconductor laser element 1.

  Next, a method for manufacturing the solid-state laser device 100 will be described with reference to FIGS.

  FIG. 4 is a diagram showing an assembly procedure of the solid-state laser apparatus 100. First, as shown in FIG. 4A, a plurality of semiconductor laser elements 1 are mounted on a predetermined position of the surface 11a of the first substrate 11 with solder or the like. At this time, a plurality of semiconductor laser elements 1 are arranged at predetermined intervals in the width direction X on the surface 11a of the first substrate 11 so that each semiconductor laser element 1 emits laser light (excitation light) in the same optical axis direction Y. (FIGS. 2 and 3).

  Next, as shown in FIG. 4B, the first substrate 11 and the Peltier element 5 are mounted at a predetermined position on one surface 12 a of the second substrate 12. At this time, the surface 11 a of the first substrate 11 on which the semiconductor laser element 1 is mounted is directed to the opposite side to the second substrate 12. A Peltier element 5 is interposed between the first substrate 11 and the second substrate 12. The first substrate 11 and the second substrate 12 are electrically connected, for example, by wire bonding (not shown). As a result, the semiconductor laser element 1 is electrically connected to the second substrate 12 via the first substrate 11 and wire bonding.

  Next, as shown in FIG. 4C, the collimating lens 21 and the condensing lens 22 of the condensing optical system 2 are attached to the holding portion 4 a of the holding member 4. Specifically, first, a UV adhesive as the third fixing member 33 is applied to the lower surface and the side surface of the first mounting portion 4c formed on the incident side of the holding portion 4a (see also FIG. 2). Further, a UV adhesive as the third fixing member 33 is applied to the lower surface and the side surface of the second attachment portion 4d formed on the emission side of the holding portion 4a (see also FIG. 2). Each attachment portion 4c, 4d is formed in a reverse portal shape so that the laser light can pass through each lens 21, 22.

  Next, the collimating lens 21 is placed on the first attachment portion 4c, and the condenser lens 22 is placed on the second attachment portion 4d. At this time, the exit surface 21b of the collimator lens 21 and the exit surface 22b of the condenser lens 22 are directed toward the mounting portion 4b. Next, a wedge-shaped jig 49 is inserted between the lenses 21 and 22, the peripheral portion of the incident surface 21 a of the collimating lens 21 is pressed against the side surface of the first mounting portion 4 c, and the emission surface 22 b of the condenser lens 22 is pressed. The peripheral edge is pressed against the side surface (FIG. 2) of the second attachment portion 4d. Further, the optical axes Q of the collimating lens 21 and the condensing lens 22 are matched by, for example, a known method (detailed explanation is omitted). Then, the third fixing material 33 is cured by irradiating ultraviolet rays with an ultraviolet irradiation device (not shown), and the lenses 21 and 22 are fixed to the attachment portions 4c and 4d. Thereafter, the wedge-shaped jig 49 is removed from between the lenses 21 and 22.

  Next, as shown in FIG. 4D, the holding member 4 is placed at the initial position of the surface 12 a of the second substrate 12. At this time, the incident surface 21 a of the collimating lens 21 of the condensing optical system 2 is opposed to the semiconductor laser element 1. In this example, the initial position of the holding member 4 on the second substrate 12 is set to a position separated from the semiconductor laser element 1 by the focal length of the collimating lens 21. As a result, the excitation light emitted from the semiconductor laser element 1 becomes parallel light that is perpendicular to the Z direction and parallel to the Y direction by the collimating lens 21. A UV adhesive that is the first fixing member 31 in FIG. 1 is applied in advance between the holding member 4 and the second substrate 12 (not shown).

  Next, as shown in FIG. 4 (e), the solid-state laser medium 3 is placed at the initial position of the placement portion 4 b of the holding member 4. At this time, the solid-state laser medium 3 is placed on the placement portion 4 b so that the incident surface 3 a of the solid-state laser medium 3 faces the semiconductor laser element 1 via the condensing optical system 2. Thereby, laser light (excitation light) emitted from the semiconductor laser element 1 enters the solid-state laser medium 3 from the incident surface 3a. In this example, the initial position of the solid-state laser medium 3 on the mounting portion 4b is set to a position away from the condenser lens 22 by the focal length of the lens. A UV adhesive, which is the second fixing member 32 of FIG. 1, is applied in advance between the solid-state laser medium 3 and the mounting portion 4b (not shown).

  Then, the optical axes Q of the semiconductor laser element 1, the condensing optical system 2, and the solid-state laser medium 3 are matched by, for example, a known method (detailed explanation is omitted). Thereafter, as described below, the positions of the semiconductor laser element 1, which is an optical system, the condensing optical system 2, and the solid-state laser medium 3 in the optical axis direction Q are adjusted and then fixed.

  FIG. 5 is a diagram showing a procedure for adjusting the position of the optical system of the fixed laser apparatus 100. 6 and 7 are plan views showing the position adjustment mechanism of the optical system of the fixed laser apparatus 100. FIG. FIG. 8 is a schematic diagram showing the relationship between the position of the optical system of the solid-state laser apparatus 100 and the spot S of the excitation light.

  First, as shown in FIG. 6, the holding member 4 is gripped by the first jig 41. Specifically, the first jig 41 sandwiches the holding member 4 in the width direction X. The first jig 41 is movable in the optical axis direction Y of the excitation light by the first actuator 43 shown in FIG. 6 while holding the holding member 4.

  Further, as shown in FIG. 7, the solid laser medium 3 is held by the second jig 42. Specifically, the second jig 42 sandwiches the solid laser medium 3 in the optical axis direction Y and adsorbs the solid laser medium 3 from above. The second jig 42 is movable in the optical axis direction Y of the excitation light by the second actuator 44 while gripping the solid laser medium 3.

  In addition, the semiconductor laser element 1 and the adjustment control device 45 are electrically connected by electrical wiring, connectors, and external wiring of the substrates 11 and 12. Further, the adjustment control device 45 and the measurement device 46 are electrically connected. Thereafter, based on the operation of the staff, the adjustment control device 45 controls the driving of the semiconductor laser element 1, the actuators 43 and 44, and the measurement device 46 as described below. As another example, the control described below may be automatically executed by the adjustment control device 45 based on a preinstalled software program without depending on the operation of the staff.

  The adjustment control device 45 first drives each semiconductor laser element 1 to emit excitation light from the semiconductor laser element 1 as shown in FIG. This excitation light is collimated by the collimator lens 21, and the collimated light is condensed on the incident surface 3 a of the solid-state laser medium 3 by the condenser lens 22. As a result, the solid-state laser medium 3 is excited, and laser light (oscillation light) LB is generated from the emission surface 3b as shown in FIGS.

  Thus, the laser beam LB generated from the solid-state laser medium 3 is measured by the measuring device 46, and the measurement result is output from the measuring device 46 to the adjustment control device 45. The adjustment control device 45 drives the actuators 41 and 42 based on the measurement result of the measurement device 46 to move the holding member 4 and the solid-state laser medium 3 in the optical axis direction Y, respectively, and thereby adjust the position of the optical system. adjust.

  Specifically, first, the adjustment control device 45 measures the delay time from when the semiconductor laser element 1 emits the excitation light to when the laser light is generated from the emission surface 3 b of the solid-state laser medium 3. Measure with At this time, if the delay time is within a predetermined range (for example, fluorescence lifetime), the adjustment control device 45 measures the energy value (intensity, etc.) of the laser beam LB generated from the emission surface 3b of the solid-state laser medium 3. Measured by device 46. If the energy value of the laser beam LB is within a predetermined range, the position adjustment in the optical axis direction Y of the holding member 4 and the solid-state laser medium 3 is completed.

  Incidentally, the above-described delay time varies depending on the total energy amount and energy density of the excitation light incident on the solid-state laser medium 3. The higher the energy density, the shorter the delay time. And the energy value of laser beam LB becomes small, so that delay time becomes short.

  On the other hand, if the energy value of the laser beam LB is out of the predetermined range, the adjustment control device 45 drives the first actuator 43 to move the holding member 4 on the second substrate 12 by the first jig 41 on the optical axis. Slide in the direction Y by one resolution (FIG. 5 (f)). In this example, the holding member 4 is moved away from the semiconductor laser element 1 by the first jig 41 (in the direction of the thick arrow in FIG. 5F).

  In this way, by moving the holding member 4 in the direction of the optical axis Y in the direction of the thick arrow in FIG. 5 (f), the semiconductor laser device 1 is moved as shown in FIGS. 8 (a) and 8 (b). The installation interval of the condensing optical system 2 is adjusted. Then, the diameter of the spot S of the excitation light condensed from the condensing optical system 2 onto the incident surface 3a of the solid-state laser medium 3 changes.

  Specifically, the distance of the condensing optical system 2 with respect to the semiconductor laser element 1 becomes wider as shown in FIG. 8A to FIG. 8B and becomes larger than the focal length of the collimating lens 21. For this reason, the excitation light radiated from the semiconductor laser element 1 spreads in the Z direction and is refracted in the Z direction by the collimating lens 21 without being collimated, and further in the X direction and the Z direction by the condenser lens 22. Focused. As a result, the diameter of the spot S of the excitation light condensed on the incident surface 3a of the solid-state laser medium 3 is reduced in the Z direction.

  Next, the control device 45 for adjustment measures the delay time by the measuring device 46, drives the second actuator 44 so that the delay time falls within a predetermined range, and the solid laser medium by the second jig 42. 3 is slid in the optical axis direction Y on the mounting portion 4b of the holding member 4 (FIG. 5G). At this time, if the delay time is below the predetermined range, the solid laser medium 3 is moved in the direction approaching the semiconductor laser element 1 by the second jig 42 (in the direction of the thick arrow in FIG. 5G). On the other hand, if the delay time exceeds the predetermined range, the solid laser medium 3 is moved away from the semiconductor laser element 1 by the second jig 42 (the direction opposite to the thick line arrow in FIG. 5G). .

  By moving the solid-state laser medium 3 in the optical axis direction Y in this way, the solid-state laser medium 3 with respect to the semiconductor laser element 1 and the condensing optical system 2 is moved as shown in FIGS. 8B and 8C. The installation interval is adjusted. Then, the diameter of the spot S of the excitation light condensed from the condensing optical system 2 onto the incident surface 3a of the solid-state laser medium 3 changes.

  In this example, the solid-state laser medium 3 is moved in the direction approaching the semiconductor laser element 1 (the direction of the thick arrow in FIG. 5G). As a result, the distance between the solid-state laser medium 3 and the semiconductor laser element 1 and the condensing optical system 2 is reduced as shown in FIG. 8B to FIG. 8C, and the light is condensed on the incident surface 3a of the solid-state laser medium 3. The diameter of the excitation light spot S increases in the X and Z directions.

  As described above, when the diameter of the spot S of the excitation light focused on the incident surface 3a of the solid-state laser medium 3 is increased, the area of the solid-state laser medium 3 irradiated with the excitation light is increased, and the energy density of the excitation light is reduced. Get smaller. As a result, the delay time becomes longer, and the energy of laser light (oscillation light) generated from the solid-state laser medium 3 increases.

  Conversely, when the solid-state laser medium 3 is moved away from the semiconductor laser element 1 (in the direction opposite to the thick arrow in FIG. 5G), the solid-state laser medium 3 is solid with respect to the semiconductor laser element 1 and the condensing optical system 2. The distance between the laser media 3 is increased, and the diameter of the spot S of the excitation light condensed on the incident surface 3a of the solid-state laser medium 3 is reduced in the X direction and the Z direction. As a result, the area of the solid-state laser medium 3 irradiated with the excitation light is reduced, the energy density of the excitation light is increased, the delay time is shortened, and the energy of the laser light generated from the solid-state laser medium 3 is reduced.

  When the delay time is within the predetermined range and the energy value of the laser light is within the predetermined range by the above procedure, the position adjustment of the holding member 4 and the solid-state laser medium 3 in the optical axis direction Y is completed. That is, the holding member 4 and the solid-state laser medium 3 are positioned in the optical axis direction Y, and the installation intervals of the semiconductor laser element 1, the condensing optical system 2, and the solid-state laser medium 3 are determined.

  Thereafter, the first fixing material 31 and the second fixing material 32 are cured by irradiating ultraviolet rays with an ultraviolet irradiation device. Thereby, the holding member 4 is fixed to the second substrate 12, and the solid-state laser medium 3 is fixed to the mounting portion 4b of the holding member 4 ((h) in FIG. 5).

  And the cover 6 is fixed to the surface 12a of the 2nd board | substrate 12 so that each parts 1-3 of the optical system, the holding member 4, the Peltier element 5, and the 1st board | substrate 11 may be covered (FIG. 1, FIG. 2). At this time, the emission window 6 a of the cover 6 is opposed to the emission surface 3 b of the solid-state laser medium 3.

  According to the above embodiment, the first substrate 11 on which the semiconductor laser element 1 is mounted is mounted on the one surface 12a of the second substrate 12, and the collimating lens 21 of the condensing optical system 2 is held by the holding portion 4a of the holding member 4. And the condenser lens 22 are held. Then, the holding member 4 is placed on the surface 12 a of the second substrate 12 so that the collimating lens 21 faces the semiconductor laser element 1, and the holding member in the optical axis direction Y of the excitation light emitted by the semiconductor laser element 1. By moving 4, the installation interval between the semiconductor laser element 1 and the condensing optical system 2 can be adjusted. Further, the solid laser medium 3 is placed on the placement portion 4b of the holding member 4 so that the incident surface 3a of the solid laser medium 3 faces the semiconductor laser element 1 through the condensing optical system 2, and the excitation light By moving the solid-state laser medium 3 in the optical axis direction Y, the installation interval of the solid-state laser medium 3 with respect to the semiconductor laser element 1 and the condensing optical system 2 can be adjusted. Then, the output of the laser beam LB generated from the solid-state laser device 100 is in an optimum state by adjusting the installation interval of the optical system composed of the semiconductor laser element 1, the condensing optical system 2, and the solid-state laser medium 3 in this way. Can be improved.

  In the above embodiment, since the holding member 4 and the solid-state laser medium 3 are slid in the optical axis direction Y by the actuators 43 and 44 via the jigs 41 and 42, respectively, the semiconductor laser element 1 and the condensing optical system 2 and the solid laser medium 3 can be easily adjusted.

  However, at that time, the pumping light is emitted from the semiconductor laser element 1, the laser beam LB generated from the solid-state laser medium 3 is measured by the measuring device 46, and the adjustment control device is based on the measurement result of the measuring device 46. 45 slides the holding member 4 and the solid-state laser medium 3 in the optical axis direction Y through the jigs 41 and 42 by the actuators 43 and 44. For this reason, the installation intervals of the semiconductor laser element 1, the condensing optical system 2, and the solid-state laser medium 3 can be appropriately adjusted so that the output of the laser beam LB generated from the solid-state laser medium 3 is in an optimum state. .

  In the present invention, various embodiments other than those described above can be adopted. For example, in the above embodiment, the delay time from when the pumping light is emitted from the semiconductor laser element 1 until the laser light LB is generated from the solid-state laser medium 3 and the energy of the laser light LB are measured by the measuring device 46. Although the example which measured and adjusted the position of the holding member 4 and the solid-state laser medium 3 based on this measured value was shown, this invention is not limited only to it. For example, the light quantity of the laser beam LB generated from the solid-state laser medium 3 may be measured by the measuring device 46, and the position of the holding member 4 or the solid-state laser medium 3 may be adjusted based on the light quantity and the threshold value. Further, the positions of the holding member 4 and the solid-state laser medium 3 are determined based on one or a plurality of measured values such as the delay time, energy, and light quantity of the laser beam LB measured by the measuring device 46 and a predetermined threshold value. You may adjust.

  In the above-described embodiment, the distance between the semiconductor laser element 1 and the collimating lens 21 is set to the same value as the focal length of the collimating lens 21 in the initial state, and is held away from the semiconductor laser element 1 in the optical axis direction Y. Although the example which adjusted the position of the member 4 and the condensing optical system 2 was shown, this invention is not limited only to this. In addition to this, for example, in the initial state, the interval between the semiconductor laser element 1 and the collimating lens 21 is set to a value different from the focal length of the collimating lens 21, and the semiconductor laser element 1 is moved away from or closer to the optical axis direction Y. The positions of the holding member 4 and the condensing optical system 2 may be adjusted.

  In the above embodiment, the distance between the condensing lens 22 and the solid-state laser medium 3 is set to the same value as the focal length of the condensing lens 22 in the initial state so that it approaches the optical axis direction Y with respect to the semiconductor laser element 1. Although the example which adjusted the position of the solid-state laser medium 3 was shown in this, this invention is not limited only to this. In addition to this, for example, in the initial state, the distance between the condenser lens 22 and the solid-state laser medium 3 is set to a value different from the focal length of the condenser lens 22 so as to approach or move away from the semiconductor laser element 1 in the optical axis direction Y. In addition, the position of the solid-state laser medium 3 may be adjusted.

  In the above embodiment, the example in which the condensing optical system 2 is configured by the collimating lens 21 and the condensing lens 22 has been shown, but the present invention is not limited thereto. The condensing optical system may be composed of at least one optical component such as a lens having a condensing function.

  Moreover, although the above embodiment showed the example which mounted the solid-state laser medium 3 directly on the mounting part 4b of the holding member 4, this invention is not limited only to it. For example, a sheet-like or plate-like stepped heat member, a heater, or a heat conducting member may be placed, and the solid laser medium 3 may be placed thereon and fixed by a fixing material.

  The present invention can be applied to a solid-state laser device used as a laser light source of various devices such as a laser applied measurement device and an optical information processing device.

DESCRIPTION OF SYMBOLS 1 Semiconductor laser element 2 Condensing optical system 21 Collimating lens 22 Condensing lens 3 Solid laser medium 3a Incident surface of a solid laser medium 4 Holding member 4a Holding part 4b Mounting part 11 1st board | substrate 12 2nd board | substrate 12a 2nd board | substrate One surface 46 Measuring device 100 Solid-state laser device LB Laser beam Y Optical axis direction

Claims (7)

A semiconductor laser element that emits excitation light; and
A condensing optical system for condensing the excitation light;
In a solid-state laser device comprising: a solid-state laser medium that generates laser light by being excited by the condensed excitation light;
A holding member having a holding unit for holding the condensing optical system and a mounting unit on which the solid-state laser medium is mounted;
A first substrate on which the semiconductor laser element is mounted;
A second substrate on which the first substrate is mounted and the holding member is placed;
The holding member is placed on the one surface of the second substrate such that the condensing optical system faces the semiconductor laser element, and is fixed to the one surface by a first fixing material,
The solid-state laser medium is placed on the placement unit such that an incident surface on which the excitation light is incident faces the semiconductor laser element via the condensing optical system, and the solid-state laser medium is placed on the placement part by the second fixing material. A solid-state laser device, which is fixed to a mounting portion. The solid-state laser device according to claim 1,
The solid-state laser device, wherein the holding member is placed on the one surface of the second substrate and is slidable in an optical axis direction of the excitation light. The solid-state laser device according to claim 1 or 2,
The solid-state laser device, wherein the solid-state laser medium is placed on the mounting portion of the holding member and is slidable in the optical axis direction of the excitation light. The solid-state laser device according to any one of claims 1 to 3,
The condensing optical system is
A collimating lens that collimates the excitation light emitted from the semiconductor laser element;
A solid-state laser device comprising: a condensing lens that condenses parallel light emitted from the collimator lens on an incident surface of the solid-state laser medium. A semiconductor laser element that emits excitation light; and
A condensing optical system for condensing the excitation light;
A solid-state laser medium that generates laser light by being excited by the condensed excitation light;
A holding member having a holding unit for holding the condensing optical system and a mounting unit on which the solid-state laser medium is mounted;
A first substrate on which the semiconductor laser element is mounted;
A first substrate mounted on one surface and a second substrate on which the holding member is placed, and a manufacturing method of a solid-state laser device comprising:
A first step of mounting the semiconductor laser element on the first substrate;
A second step of mounting the first substrate on one surface of the second substrate;
A third step of holding the condensing optical system by the holding portion of the holding member;
A fourth step of placing the holding member on the one surface of the second substrate such that the condensing optical system faces the semiconductor laser element;
The solid-state laser medium is placed on the mounting portion of the holding member so that an incident surface of the solid-state laser medium on which the excitation light is incident faces the semiconductor laser element via the condensing optical system. A fifth step;
A sixth step of fixing the holding member to the one surface of the second substrate with a first fixing member;
A solid-state laser device manufacturing method, comprising: a seventh step of fixing the solid-state laser medium to the mounting portion of the holding member with a second fixing member. In the manufacturing method of the solid-state laser device according to claim 5,
The sixth step is performed after at least the first to fifth steps,
In the sixth step,
Measuring laser light generated from the solid-state laser medium by emitting the excitation light from the semiconductor laser element,
Based on the measurement result of the measuring device, the holding member is slid in the optical axis direction of the excitation light on the one surface of the second substrate to position the holding member,
Thereafter, the holding member is fixed to the one surface of the second substrate by the first fixing material. In the manufacturing method of the solid-state laser device according to claim 5 or 6,
The seventh step is performed after at least the first to fifth steps,
In the seventh step,
Measuring laser light generated from the solid-state laser medium by emitting the excitation light from the semiconductor laser element,
Based on the measurement result of the measuring device, the solid laser medium is slid in the optical axis direction of the excitation light on the mounting portion of the holding member to position the solid laser medium,
Thereafter, the solid-state laser medium is fixed to the mounting portion by the second fixing material, and the method for manufacturing a solid-state laser device is characterized in that:

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