JP2017201321A - Guide plate for probe card and method for manufacturing the guide plate - Google Patents

Abstract

PURPOSE: To provide a guide plate for a probe card which can deal with reduction in the diameter of a through-hole and in the width of a pitch by increasing the mechanical strength of an edge part of a through-hole.CONSTITUTION: A guide plate 100 for a probe card includes: a silicon substrate 110 having a through-hole 111 capable of guiding a probe; edge parts 113a and 113b formed of surfaces 123 and 124 of the silicon substrate 110 and an inner wall surface 112 of the through-hole 111; and curved surface parts 122a and 122b formed of a silicon oxide film in the edge parts 113a and 113b.SELECTED DRAWING: Figure 2A

Description

  The present invention relates to a probe card guide plate for guiding a probe and a method of manufacturing the probe card guide plate.

  When performing an operation inspection of a semiconductor device on a semiconductor wafer using a probe card, it is necessary to accurately guide the probe to the electrode of the semiconductor device. A probe card guide plate is used to guide the tip of the probe. As this type of probe card guide plate, a ceramic plate having a thermal expansion coefficient similar to that of a semiconductor wafer is used (see Patent Document 1). The ceramic plate is provided with a plurality of through holes for guiding the probe. That is, the probe is guided by the through hole, and is positioned so that the tip of the probe accurately contacts the electrode of the semiconductor device. This through hole is created by machining or laser processing.

JP 2003-215163 A Japanese Patent No. 5073482

  In recent years, with the miniaturization of semiconductor devices, it has been demanded that the electrodes of the semiconductor devices are miniaturized and the pitch is narrowed, and the probe of the probe card is also narrowed. In order to cope with this, the through holes in the probe card guide plate are also required to be finer and narrower in pitch. For example, it is required to provide tens of thousands of 90 μm × 90 μm rectangular through holes in an area of about 50 mm × 50 mm of the probe card guide plate.

  However, like the probe card guide plate, it is difficult to form fine through holes at a narrow pitch in a ceramic plate by machining or laser processing.

  For this reason, the inventors of the present application have considered using a silicon substrate that is easy to process instead of the ceramic plate. However, since the silicon substrate is more fragile than the ceramic plate, the probe contacts the through hole. The edge could be destroyed. Further, since the silicon substrate is not an insulator, there is a problem in that the probes that are in contact with the inner wall surface of the through hole are electrically connected. For this reason, a silicon substrate could not be used as a guide plate.

  Therefore, the inventors of the present application analyze the state of breakage at the edge portion of the fine through hole of the silicon substrate, find that it can be prevented by performing partial strengthening, and the inner wall surface of the through hole. By forming an insulating film over the entire region, the electrical problem was overcome and a guide plate made of a silicon substrate was completed. In the manufacture of semiconductor devices, it is known to use an oxide film or a nitride film for protecting the silicon layer (see Patent Document 2). Such a thin oxide film was effective as a protective film against the chemical environment, but it is not considered sufficient for destruction by mechanical force, and such technology is adopted for the guide plate. There was no idea to do.

  The present invention has been made in view of the above circumstances, and a first object of the present invention is to improve the mechanical strength of the edge portion of the through hole, thereby miniaturizing and narrowing the through hole. An object of the present invention is to provide a probe card guide plate and a method for manufacturing the probe card guide plate that can cope with pitching. The second object is to provide a probe card guide plate and a probe card guide plate manufacturing method capable of insulating between probes.

  In order to solve the above-mentioned problems, the probe card guide plate of the present invention is the first surface, the second surface on the back side thereof, and the first surface to the second surface. A first edge portion of the through-hole formed by a silicon substrate having a through-hole penetrating and guiding a probe; the first surface of the silicon substrate; and the inner wall surface of the through-hole; A second edge portion of the through hole formed by the second surface of the silicon substrate and the inner wall surface of the through hole, and a silicon oxide film that is a thermal oxide film formed on the first edge portion. 1 curved surface portion and a second curved surface portion made of a silicon oxide film which is a thermal oxide film formed on the second edge portion. The probe inserted into the through hole can slide on the first and second curved surface portions. The first curved surface portion is curved in an R shape so as to extend from a portion on the first surface of the silicon substrate of the first curved surface portion to a portion on the inner wall surface of the through hole. The second curved surface portion is curved in an R shape so as to extend from a portion on the second surface of the silicon substrate of the second curved surface portion to a portion on the inner wall surface of the through hole.

  In the case of the probe card guide plate having such a configuration, a plurality of fine through-holes can be provided in the silicon substrate at a narrow pitch at a time by photolithography and etching. Moreover, since the curved portion made of the silicon oxide film is provided at the edge portion of the through hole, the mechanical strength of the edge portion of the through hole can be improved. In addition, since the curved portion is provided at the edge portion of the through hole, the probe is difficult to be caught on the edge portion of the through hole when the probe is guided to the through hole. Therefore, it is possible to reduce the occurrence of the problem that the probe is scraped by the edge portion of the through hole and / or the edge portion of the through hole is broken by the probe. Furthermore, since the curved surface portion is formed by thermally oxidizing the edge portion of the through hole of the silicon substrate to increase the volume of the edge portion, the curved surface portion can be easily formed on the edge portion of the through hole. Can do.

  The said through-hole can be set as the structure which has a through-hole main body and four grooves. The through-hole body can be substantially rectangular. The said groove | channel can be set as the structure provided in the contact | abutting part of the four wall surfaces of the said through-hole main body. The wall surface of the through-hole body can guide a probe having a square cross section.

  In the case of the probe card guide plate having such a configuration, when the probe having a rectangular cross section is guided to the wall surface of the substantially rectangular through hole body, collision between the corner portion of the probe and the inner wall surface of the through hole is avoided by the groove. The Therefore, wear of the corner portion of the probe and / or the inner wall surface of the through hole caused by collision between the corner portion of the probe and the inner wall surface of the through hole is suppressed.

  The thickness of the silicon oxide film at the first and second edge portions may be 5 μm or more. In the case of the probe card guide plate of this aspect, the probe is scraped into the first and second curved surface portions, the first and second curved surface portions are destroyed by the probe, the inner wall portion and / or the first and first curved surface portions. The disappearance of the two curved surface portions due to wear can be effectively suppressed.

  An inner wall portion made of a silicon oxide film, which is a thermal oxide film, can be formed on the inner wall surface of the through hole.

  The probe card guide plate having such a configuration is provided with a through hole, and is simply placed in a high-temperature environment in an oxygen atmosphere. A film is formed. Since the curved surface portion and the inner wall portion made of the silicon oxide film are complete insulating films, the probes that come into contact with the curved surface portion and / or the inner wall portion are not electrically connected via the guide plate. Thus, a probe card guide plate using the silicon oxide film as a mechanical and electrical protective layer can be easily provided.

It is a schematic plan view of the guide plate for probe cards which concerns on the Example of this invention. It is an expansion perspective view of (alpha) part in FIG. 1A of the said guide plate. It is 2A-2A sectional drawing in FIG. 1A of the said guide plate. It is 2B-2B expanded sectional drawing in FIG. 1A of the said guide plate. It is 2C-2C expanded sectional drawing in FIG. 1A of the said guide plate. 1 is a schematic cross-sectional view of a probe card according to an embodiment of the present invention. It is explanatory drawing which shows the positional relationship of the guide board for probe cards of the said probe card, and a probe. It is explanatory drawing which shows the positional relationship of the guide board for probe cards of a comparative example, and a probe.

  Hereinafter, a probe card guide plate 100 according to an embodiment of the present invention will be described with reference to FIGS. 1A to 2C. A probe card guide plate 100 shown in FIGS. 1A and 2A includes a silicon substrate 110 and a silicon oxide film 120. Hereinafter, each component of the probe card guide plate 100 will be described in detail.

  The silicon substrate 110 is a plate made of single crystal silicon, polycrystalline silicon, or amorphous silicon. As shown in FIGS. 1A to 2C, the silicon substrate 110 includes a main surface 110a (the upper surface shown in FIG. 2A (the surface on one side of the silicon substrate in the claims)) and a back surface 110b (the lower surface shown in FIG. 2A). The surface of the other side of the silicon substrate in the claims)), the outer peripheral surface, the plurality of through holes 111, the inner wall surface 112 of the through hole 111, and the edge portions 113a and 113b (first and first) of the through hole 111. 2 edge portions).

  The through hole 111 is a hole that penetrates the silicon substrate 110 in the thickness direction, and is provided at a position corresponding to the position of the plurality of electrodes of the semiconductor wafer or semiconductor device. The through hole 111 has a through hole main body 111a and four grooves 111b. The through-hole body 111a is a substantially quadrangular hole that penetrates the silicon substrate 110 in the thickness direction. The groove 111b is an arc-shaped hole provided at the abutting portion of the four wall surfaces of the through-hole body 111a so as to communicate with the through-hole body 111a. The groove 111 b extends in the thickness direction of the silicon substrate 110 and penetrates the silicon substrate 110.

  The inner wall surface 112 has four wall surfaces of the through-hole body 111a and four wall surfaces of the grooves 111b. As shown in FIGS. 1B to 2B, the edge portion 113 a is an annular corner portion constituted by the main surface 110 a of the silicon substrate 110 and the inner wall surface 112 of the through hole 111. As shown in FIGS. 2A and 2C, the edge portion 113 b is an annular corner portion formed by the back surface 110 b of the silicon substrate 110 and the inner wall surface 112 of the through hole 111.

  As shown in FIGS. 1A to 2C, the silicon oxide film 120 is formed by thermally oxidizing the main surface 110a, the back surface 110b, the outer peripheral surface, the inner wall surface 112 of the through hole 111, and the edge portions 113a and 113b. These are insulating layers formed on the main surface 110a, the back surface 110b, the outer peripheral surface, the inner wall surface 112 of the through-hole 111, and the edge portions 113a and 113b. The thickness dimension D of the silicon oxide film 120 is preferably about 3 to 10 μm, and more preferably about 5 μm or more. This is because if the thickness dimension D of the silicon oxide film 120 is about 5 μm or more, the silicon oxide film 120 can endure several hundred thousand to two million times of sliding of the probe 200 described later. It is not desirable to set the thickness dimension D of the silicon oxide film 120 to 10 μm or more because the formation time of the silicon oxide film 120 becomes longer, but this is not denied in the present invention. That is, the thickness of the silicon oxide film 120 can be 10 μm or more.

  The silicon oxide film 120 has an inner wall portion 121, curved surface portions 122 a and 122 b (first and second curved surface portions), a main surface portion 123, a back surface portion 124, and an outer peripheral portion 125. The inner wall portion 121 is provided on the inner wall surface 112 of the through hole 111. The curved surface portion 122 a is provided at the edge portion 113 a of the through hole 111, and the curved surface portion 122 b is provided at the edge portion 113 b of the through hole 111. The curved surface portions 122 a and 122 b are continuous with the inner wall portion 121. By these curved surface portions 122a and 122b, the edge portions 113a and 113b of the through hole 111 are curved in an R shape. The main surface portion 123 is provided on the main surface 110 a of the silicon substrate 110. The main surface portion 123 is continuous with the curved surface portion 122a. The back surface portion 124 is provided on the back surface 110 b of the silicon substrate 110. The back surface portion 124 is continuous with the curved surface portion 122b. The outer peripheral portion 125 is provided on the outer peripheral surface of the silicon substrate 110. The outer peripheral portion 125 is continuous with the main surface portion 123 and the back surface portion 124. Note that it is possible to configure the entire portion between the through holes 111 of the silicon substrate 110 with the silicon oxide film 120. For example, in the case where the distance between the through holes 111 of the silicon substrate 110 is 15 μm, when the thickness dimension D of the silicon oxide film 120 is 7.5 μm or more, the entire portion between the through holes 111 of the silicon substrate 110 becomes the silicon oxide film 120.

  Hereinafter, a method for manufacturing the probe card guide plate 100 having the above-described configuration will be described. First, a silicon substrate is prepared. Thereafter, a resist is applied on the main surface or the back surface of the silicon substrate. Thereafter, exposure and development are performed using a mask as a resist to form a plurality of openings corresponding to the through holes 111. Thereafter, the through hole 111 is formed in the silicon substrate by performing dry etching using a Bosch process with an RIE apparatus. As a result, the silicon substrate becomes the silicon substrate 110. Thereafter, the resist is removed from the silicon substrate 110.

  Thereafter, the silicon substrate 110 is heated at 1000 ° C. for 40 hours (2400 minutes) using a wet oxidation method, and the outer surface (the main surface 110a, the back surface 110b, and the outer peripheral surface) of the silicon substrate 110, and the inner wall surface of the through hole 111. 112 and edge portions 113a and 113b of the through-hole 111 are thermally oxidized. This increases the volume of the main surface 110a, the back surface 110b, the outer peripheral surface, and the inner wall surface 112 of the through hole 111 of the silicon substrate 110, and increases the volume of the main surface 110a, the back surface 110b, the outer peripheral surface, and the through hole 111 of the silicon substrate 110. A silicon oxide film 120 (main surface portion 123, back surface portion 124, outer peripheral portion 125, inner wall portion 121, curved surface portions 122a and 122b) is formed on the wall surface 112. Note that the silicon oxide film 120 can also be formed on the silicon substrate 110 by a dry oxidation method.

  Hereinafter, a probe card according to an embodiment of the present invention will be described with reference to FIGS. 3 and 4A. The probe card shown in FIG. 3 includes two probe card guide plates 100, a plurality of probes 200, a spacer 300, a wiring board 400, an intermediate board 500, a plurality of spring probes 600, and a main board 700. And a reinforcing plate 800. Hereinafter, each component of the probe card will be described in detail. For convenience of explanation, of the two probe card guide plates 100, the probe card guide plate 100 positioned on the probe tip side of the probe 200 is referred to as the needle tip side probe card guide plate 100, and the needle of the probe 200 is used. The probe card guide plate 100 located on the former side is referred to as a needle base side probe card guide plate 100.

  The main board 700 is a printed board. The main substrate 700 has a first surface and a second surface on the back side of the first surface. A plurality of electrodes 710 are provided on the first surface of the main substrate 700, and a plurality of external electrodes 720 are provided on the outer edge of the second surface of the main substrate 700. The electrode 710 and the external electrode 720 are connected by a plurality of conductive lines (not shown) provided on the first and second surfaces and / or the inside of the main substrate 700.

  The reinforcing plate 800 is a plate-like member (for example, a plate made of stainless steel or the like) that is harder than the main substrate 700. The reinforcing plate 800 is screwed to the second surface of the main board 700. The reinforcing plate 800 prevents the main substrate 700 from being bent.

  The intermediate substrate 500 is fixed to the first surface of the main substrate 700 and is disposed between the main substrate 700 and the wiring substrate 400. The intermediate substrate 500 is provided with a plurality of through holes 510 penetrating the intermediate substrate 500 in the thickness direction. The through hole 510 is disposed at a position corresponding to the position of the electrode 710 on the main substrate 700.

  The wiring board 400 is an ST (space transformer) board. The wiring board 400 is fixed to the main board 700 and the reinforcing plate 800 with fixing screws (not shown), and is arranged in parallel to the main board 700 on the lower side of the intermediate board 500 in the figure. The wiring board 400 has a first surface and a second surface on the back side of the first surface. On the first surface of the wiring board 400, a plurality of electrodes 410 are disposed at positions corresponding to the through holes 111 of the needle tip side and needle base side probe card guide plate 100. A plurality of electrodes 420 are disposed on the second surface of the wiring board 400 at intervals. The electrode 420 is disposed on the vertical line of the electrode 710 of the main substrate 700. The electrode 410 and the electrode 420 are connected by a plurality of conductive lines (not shown) provided on the first and second surfaces and / or the inside of the wiring substrate 400.

  Each spring probe 600 is inserted into the through hole 510 of the intermediate substrate 500 and is interposed between the electrode 710 of the main substrate 700 and the electrode 420 of the wiring substrate 400. Thereby, the spring probe 600 electrically connects the electrode 710 and the electrode 420.

  The needle point side and needle point side probe card guide plate 100 is different in that the outer shape of the needle point side probe card guide plate 100 is smaller than the outer shape of the needle point side probe card guide plate 100. The needle tip side probe card guide plate 100 is fixed in parallel to the wiring board 400 with bolts and nuts at intervals. Spacers 300 are interposed between both ends of the probe tip side guide card 100 and the wiring board 400. The needle base side probe card guide plate 100 is fixed to the wiring board 400 by using bolts and nuts, and is arranged in parallel with the wiring board 400 at intervals. The needle base side probe card guide plate 100 is disposed between the wiring board 400 and the needle tip side probe card guide plate 100. The through hole 111 of the needle tip side probe card guide plate 100 is positioned in the vertical direction of the through hole 111 of the needle base side probe card guide plate 100.

  Each probe 200 is a needle having a rectangular cross section as shown in FIG. 4A. As shown in FIG. 3, the probe 200 includes first and second end portions 210 and 220 and an elastic deformation portion 230. The first end portion 210 is one end portion of the probe 200 in the length direction, and is inserted into the corresponding through hole 111 of the needle base side probe card guide plate 100, and the inner wall portion 121 / or the curved surface of the through hole 111. It can slide on the parts 122a and 122b. The inner wall portion 121 and the curved surface portions 122a and 122b insulate the first end portion 210 from the silicon substrate 110 of the probe base side guide card 100. The first end 210 is in contact with the corresponding electrode 410 of the wiring board 400 and is solder-connected to the electrode 410. The second end 220 is the other end in the length direction of the probe 200 (that is, the end opposite to the first end 210), and the corresponding through hole of the probe tip side guide plate 100 for the probe tip side. 111 is slidable on the inner wall portion 121 and / or the curved surface portions 122a and 122b of the through-hole 111. The inner wall portion 121 and the curved surface portions 122a and 122b insulate the second end portion 220 and the silicon substrate 110 of the probe tip side probe card guide plate 100 from each other. The second end 220 is a part that can contact the electrode of the semiconductor wafer or semiconductor device. In short, the probe 200 is guided by the needle base side probe card guide plate 100 and the through hole 111 of the needle base side probe card guide plate 100 so as to be in contact with the electrodes of the semiconductor wafer or the semiconductor device. The elastic deformation portion 230 is provided between the first and second end portions 210 and 220 and is curved in a substantially C shape.

  Hereinafter, the probe card is attached to a prober of a tester and used to measure electrical characteristics of a semiconductor wafer or a semiconductor device. Specifically, the prober places the probe card and the semiconductor wafer or semiconductor device so as to face each other, and relatively closes the probe card and the semiconductor wafer or semiconductor device in this state. Then, the second end 220 of the probe 200 of the probe card is in contact with the electrode of the semiconductor wafer or semiconductor device, and the second end 220 of the probe 200 is pressed against the electrode of the semiconductor wafer or semiconductor device ( That is, a load is applied to the second end 220). Then, the elastic deformation part 230 of the probe 200 is elastically deformed so as to be bent, and the probe 200 is bent. As a result, the first and second end portions 210 and 220 of the probe 200 are inclined, and slide on the inner wall portion 121 and / or the curved surface portions 122a and 122b of the silicon oxide film 120 of the needle-side probe card guide plate 100. (See FIG. 4). With the second end 220 of the probe 200 in contact with the electrodes of the semiconductor wafer or semiconductor device, the electrical characteristics of the semiconductor wafer or semiconductor device are measured by the tester.

  In the case of the probe card as described above, a plurality of fine through-holes 111 can be formed at a narrow pitch at a time in the silicon substrate 110 of the probe card guide plate 100 by photolithography and etching. Since dry etching using a Bosch process is used as etching, the through-hole 111 can be opened with high accuracy and a high aspect ratio.

  Moreover, since the silicon oxide film 120 is provided on the inner wall surface 112 of the through hole 111 and the edge portions 113a and 113b of the through hole 111, the machine of the inner wall surface 112 of the through hole 111 and the edge portions 113a and 113b of the through hole 111 is achieved. Strength can be improved. Since the curved surface portions 122a and 122b of the silicon oxide film 120 are provided at the edge portions 113a and 113b of the through hole 111, the probe 200 is difficult to be caught by the edge portions 113a and 113b during sliding. Therefore, when the probe 200 inserted through the through hole 111 contacts the electrode of the semiconductor device or the semiconductor wafer, the probe 200 slides on the inner wall portion 121 and / or the curved surface portions 122a and 122b of the silicon oxide film 120 of the through hole 111. Even if it moves, the probe 200 is scraped into the curved surface portions 122a and 122b, the curved surface portions 122a and 122b are destroyed by the probe 200, or the inner wall portion 121 and / or the curved surface portions 122a and 122b disappear due to wear. Can be suppressed. In particular, by setting the thickness D of the inner wall 121 and the curved surfaces 122a and 122b to about 5 μm, the probe 200 is scraped into the curved surfaces 122a and 122b, the curved surfaces 122a and 122b are destroyed by the probe 200, the inner wall It was possible to effectively prevent the portion 121 and / or the curved surface portions 122a and 122b from disappearing due to wear.

  As shown in FIG. 4B, when the rectangular through hole 10 is opened in the silicon substrate by photolithography and etching, the abutting portions (corner portions) of the four wall surfaces of the through hole 10 have a curved surface shape (R shape). . When the probe 20 having a quadrangular cross section slides in the through hole 10, the corner of the probe 20 slides on the curved corner of the through hole 10, so that the curved corner of the through hole 10 is missing. Or loss due to wear. In contrast, in the probe card guide plate 100, as shown in FIG. 4A, the through-hole 111 is provided with grooves 111b at the abutting portions (corner portions) of the four wall surfaces of the through-hole body 111a. Therefore, when the probe 200 (first and second end portions 210 and 220) having a quadrangular section is guided (slided) in a surface contact state with the wall surface of the through-hole body 111a of the through-hole 111, the angle of the probe 200 is increased. And the inner wall 121 of the through hole 111 are avoided by the groove 111b. In this respect as well, it is possible to prevent the inner wall 121 of the through hole 111 from being lost due to chipping or wear.

  Furthermore, the silicon oxide film 120 can be easily formed simply by thermally oxidizing the silicon substrate 110. In particular, the curved surface portions 122a and 122b of the silicon oxide film 120 increase in volume and create the curved surface portions 122a and 122b simply by thermally oxidizing the edge portions 113a and 113b of the through-hole 111. , 122b can be easily provided.

  Further, when the second end portion 220 of the probe 200 is in contact with the electrode of the semiconductor device or the semiconductor wafer, a high-frequency current flows through the probe 200 and Joule heat is generated. When the Joule heat is generated, the first and second end portions 210 and 220 of the probe 200 come into contact with the silicon substrate 110, so that the Joule heat of the probe 200 can be radiated through the silicon substrate 110. Therefore, the miniaturized probe 200 can be prevented from being melted or brittle fractured by Joule heat.

  The above-described probe card guide plate and probe card are not limited to the above-described embodiments, and can be arbitrarily changed in design within the scope of the claims. Details will be described below.

  In the above embodiment, the through hole 111 of the silicon substrate 110 has the through hole main body 111a and the groove 111b. However, the design of the through hole of the silicon substrate of the present invention can be arbitrarily changed as long as it penetrates the silicon substrate in the thickness direction and the probe can be inserted (guided). For example, the design of the through hole of the silicon substrate can be changed to a polygonal shape or a circular shape. In the above embodiment, the through hole is opened in the silicon substrate by dry etching using the Bosch process, but can be opened in the silicon substrate by other etching methods.

  In the above embodiment, the silicon oxide film 120 has the inner wall portion 121, the curved surface portions 122a and 122b, the main surface portion 123, the back surface portion 124, and the outer peripheral portion 125. However, the design of the silicon oxide film of the present invention can be arbitrarily changed as long as it has a curved surface portion provided at an edge portion constituted by the surface of the silicon substrate and the inner wall surface of the through hole. For example, the silicon oxide film has an inner wall portion provided on the inner wall surface of the through hole of the silicon substrate, and a curved surface portion provided on an edge portion formed by the surface of the silicon substrate and the inner wall surface of the through hole. Is possible. The silicon oxide film 120 can be configured to have an inner wall portion 121 and a curved surface portion 122a. The silicon oxide film 120 can be configured to have an inner wall portion 121 and a curved surface portion 122b. The silicon oxide film 120 can be configured to include an inner wall portion 121, a curved surface portion 122 a, and a main surface portion 123. The silicon oxide film 120 can be configured to include an inner wall portion 121, a curved surface portion 122 b, and a back surface portion 124. The silicon oxide film 120 can be configured to include an inner wall portion 121, curved surface portions 122 a and 122 b, a main surface portion 123, and a back surface portion 124. A portion of the silicon substrate that does not require a silicon oxide film may be masked during thermal oxidation.

  In the above embodiment, the probe 200 has the first and second end portions 210 and 220 and the elastic deformation portion 230. However, the design of the probe can be arbitrarily changed as long as the probe can be inserted into the through hole of the probe card guide plate of the above-described embodiment or the above-described design modification. For example, the probe can be a linear or cantilever needle. Also in this case, at least one of the first and second end portions in the length direction of the probe is inserted into the through hole of the probe card guide plate of the above-described embodiment or the above-described design modification.

  In the above embodiment, the probe 200 is slidable on the inner wall portion 121 and / or the curved surface portions 122a and 122b of the through hole 111 of the probe card guide plate 100. However, the probe of the present invention can be configured to be in contact with the inner wall portion of the through hole of the probe card guide plate in the initial state.

  The elastic deformation portion 230 of the probe 200 can be omitted. In the above embodiment, the elastic deformation portion 230 of the probe 200 is substantially C-shaped. However, the shape of the elastic deformation portion of the probe according to the present invention is such that when a load is applied to the second end portion of the probe, the elastic deformation portion is elastically deformed, and the probe is of the above-described embodiment or the above-described design variation. The design can be arbitrarily changed as long as it can contact the inner wall portion and / or the curved surface portion of the through hole of the probe card guide plate. For example, the design of the elastically deformable portion can be changed to a substantially square shape or an inclined shape.

  The intermediate board 500, the spring probe 600, the main board 700, and the reinforcing plate 800 of the probe card can be omitted. In addition, it is possible to appropriately change the design as to whether or not the wiring board is connected to another board (including the main board). The wiring board itself can be used as the main board. The electrical connection between the wiring board and another board is not limited to the spring probe 600, and a well-known connection member such as a general probe, FPC, or cable can be used.

  It should be noted that the material, shape, dimensions, number, arrangement, etc. constituting each component of the probe card guide plate and the probe card in the above embodiment are examples, and as long as the same function can be realized. It is possible to change the design arbitrarily. The probe card only needs to include at least one probe card guide plate.

100... Probe card guide plate 110... Silicon substrate 110 a Main surface (surface of silicon substrate)
110b back side (surface of silicon substrate)
111..Through hole 111a.Through hole main body 111b.Groove 112..Inner wall surface 113a.Edge portion 113b.Edge portion 120 ... Silicon oxide film 121..Inner wall portion 122a. Surface part 124 .. Back surface part 125 .. Peripheral part 200... Probe 210... First end part 220... Second end part 230 ... Elastic deformation part 300.・ Wiring board 500 ... Intermediate board 600 ... Spring probe 700 ... Main board 800 ... Reinforcing plate

Claims (5)

A silicon substrate having a first surface, a second surface on the back side thereof, and a through-hole penetrating from the first surface to the second surface and capable of guiding a probe;
A first edge portion of the through hole constituted by the first surface of the silicon substrate and an inner wall surface of the through hole;
A second edge portion of the through hole constituted by the second surface of the silicon substrate and the inner wall surface of the through hole;
A first curved surface portion made of a silicon oxide film which is a thermal oxide film formed on the first edge portion;
A second curved surface portion made of a silicon oxide film that is a thermal oxide film formed on the second edge portion, and the probe inserted into the through hole on the first and second curved surface portions slides. Is movable,
The first curved surface portion is curved in an R shape so as to extend from a portion on the first surface of the silicon substrate of the first curved surface portion to a portion on the inner wall surface of the through hole,
The second curved surface portion is curved in an R shape so as to extend from a portion on the second surface of the silicon substrate of the second curved surface portion to a portion on the inner wall surface of the through hole. Board. In the probe card guide plate according to claim 1,
A guide plate for a probe card, wherein the thickness of the silicon oxide film at the first and second edge portions is 5 μm or more. In the probe card guide plate according to claim 1 or 2,
A probe card guide plate further comprising an inner wall portion made of a silicon oxide film which is a thermal oxide film formed on the inner wall surface of the through hole. In the silicon substrate, a through-hole penetrating from the first surface of the silicon substrate to the second surface on the back side is opened,
An edge portion of the through hole constituted by at least the first surface of the silicon substrate and the inner wall surface of the through hole is thermally oxidized to form a curved surface portion made of a silicon oxide film of 5 μm or more on the edge portion. And the probe inserted in the through hole on the curved surface portion is slidable,
The method for manufacturing a probe card guide plate, wherein the curved surface portion is curved in an R shape so as to extend from a portion on the first surface of the silicon substrate of the curved surface portion to a portion on the inner wall surface of the through hole. . In the manufacturing method of the guide board for probe cards of Claim 4,
A method of manufacturing a probe card guide plate, wherein the edge portion of the through hole is thermally oxidized and the inner wall surface of the through hole is thermally oxidized to form a silicon oxide film on the inner wall surface.