JP2017193635A - Thermosetting resin composition, resin-sealed substrate, and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermosetting resin composition capable of suppressing sticking to a die during die molding.SOLUTION: The thermosetting resin composition of the present invention is to be used for forming a resin-sealed substrate. When the thermosetting resin composition is cured at 175°C to obtain a cured plate, the surface energy of the cured plate is 30 mN/m or less.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a thermosetting resin composition, a resin sealing substrate, and an electronic device.

  Until now, various developments have been made on epoxy resin compositions for sealing used in transfer molding. As this type of technology, for example, the technology described in Patent Document 1 can be cited. According to this document, it is described that the transfer moldability can be improved by increasing the fluidity of the sealing epoxy resin composition molded into a tablet shape.

JP-A-5-152363

However, in recent years, from the viewpoint of improving the productivity of the manufacturing process of semiconductor packages, the molds used have a larger area.
As a result of the study by the present inventors in view of such a development environment, after molding the sealing epoxy resin composition described in the above document in the mold cavity, the mold is opened, and the obtained molded body It was found that when the was taken out from the mold, a part of the molded body stuck to the inside of the mold and remained.
That is, the sealing epoxy resin composition described in the above document has room for improvement in terms of sticking to the mold during mold molding.

From the viewpoint of sticking the mold, the present inventor has come to focus on the adhesiveness to a mold having a large area with respect to a molded body made of a cured product of the thermosetting resin composition. As a result of further investigation based on this point of view, it was found that the wettability on the surface of the molded body was related to the mold adhesion.
Further examination by the present inventor has revealed that the surface energy of a cured plate obtained by curing the thermosetting resin composition at 175 ° C. is appropriate as an index for evaluating mold adhesion.
As a result of further diligent research based on such knowledge, it was found that by adjusting the surface energy to a predetermined value or less, it is possible to appropriately control the mold adhesion, and to suppress the sticking of the mold at the time of mold molding. The invention has been completed.

According to the present invention,
A thermosetting resin composition used for forming a resin-encapsulated substrate,
A thermosetting resin composition is provided in which the surface energy of a cured plate obtained by curing the thermosetting resin composition at 175 ° C. is 30 mN / m or less.

  Moreover, according to this invention, the resin sealing board provided with the hardened | cured material of the said thermosetting resin composition is provided.

Moreover, according to the present invention,
The resin-encapsulated substrate;
And an electronic component mounted on the resin-encapsulated substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the thermosetting resin composition which can suppress metal mold | die sticking at the time of metal mold | die shaping | molding, a resin sealing substrate using the same, and an electronic device are provided.

It is sectional drawing which shows an example of a structure of the electronic device which concerns on this embodiment. It is process sectional drawing which shows an example of the manufacturing process of the electronic device which concerns on this embodiment. It is a top view which shows the structure of the resin sealing substrate which concerns on this embodiment. It is the schematic which showed the measuring method of a repose angle ((phi)) and a collapse angle ((theta)). It is the schematic of an example which shows the method of obtaining a granular thermosetting resin composition.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  The thermosetting resin composition of this embodiment is a thermosetting resin composition used for forming a resin-encapsulated substrate (Molded Substrate). In the present embodiment, the surface energy of a cured plate obtained by curing the thermosetting resin composition at 175 ° C. can be 30 mN / m or less.

As a result of examining the sticking of the mold, the present inventor has come to focus on the relationship between the adhesion of the molded body made of a cured product of the thermosetting resin composition and the mold having a large area. As a result of examination based on this point of focus, it was found that the wettability on the surface of the molded body has a correlation with the mold adhesion.
Further examination by the present inventor has revealed that the surface energy of a cured plate obtained by curing the thermosetting resin composition at 175 ° C. is appropriate as an index for evaluating mold adhesion.
As a result of further diligent research based on such findings, it was found that by adjusting the surface energy to 30 mN / m or less, mold adhesion can be appropriately controlled, and mold sticking during mold molding can be suppressed, The present invention has been completed.

  According to the thermosetting resin composition of the present embodiment, it is possible to suppress sticking of the molded body of the thermosetting resin composition to the mold during molding of a large-area mold.

  Hereinafter, the components of the thermosetting resin composition of the present embodiment will be described.

(Thermosetting resin)
The thermosetting resin composition of the present embodiment can contain a thermosetting resin.
Although the said thermosetting resin is not specifically limited, For example, you may contain an epoxy resin.

Although it does not specifically limit as said epoxy resin, For example, it is possible to use the monomer, oligomer, and polymer in general which have 2 or more of epoxy groups in 1 molecule.
Specific examples of such an epoxy resin include, for example, biphenyl type epoxy resin; bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethylbisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, Hydrogenated bisphenol A type epoxy resin, bisphenol M type epoxy resin (4,4 ′-(1,3-phenylenediisopridiene) bisphenol type epoxy resin), bisphenol P type epoxy resin (4,4 ′-(1, Bisphenol type epoxy resins such as 4-phenylenediisopridiene) bisphenol type epoxy resin) and bisphenol Z type epoxy resin (4,4'-cyclohexyldiene bisphenol type epoxy resin); stilbene type epoxy resin; Type epoxy resins, brominated phenol novolac type epoxy resins, cresol novolac type epoxy resins, novolak type epoxy resins such as novolak type epoxy resins having a condensed ring aromatic hydrocarbon structure; trihydroxyphenylmethane type epoxy resins, alkyl-modified Multifunctional epoxy resins such as trihydroxyphenonylmethane type epoxy resins and tetraphenylolethane type epoxy resins; Phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins and biphenylene skeleton-containing phenol aralkyl type epoxy resins; Dihydroxynaphthalene -Type epoxy resin, naphthalenediol type epoxy resin, hydroxynaphthalene and / or dihydroxynaphthalene dimer obtained by glycidyl etherification Difunctional or tetrafunctional naphthalene dimer type epoxy resin, binaphthyl type epoxy resin, epoxy resin having a naphthalene skeleton such as naphthol aralkyl type epoxy resin; anthracene type epoxy resin; phenoxy type epoxy resin; dicyclopentadiene modified phenol type epoxy resin Bridged cyclic hydrocarbon compound modified phenolic epoxy resin, etc .; norbornene type epoxy resin; adamantane type epoxy resin; fluorene type epoxy resin, phosphorus-containing epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, bisphenol A novolak Type epoxy resin, bixylenol type epoxy resin; heterocyclic epoxy resins such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; N, N, N ′, N′-tetraglycidyl methacrylate Glycidylamines such as rangeamine, N, N, N ′, N′-tetraglycidylbisaminomethylcyclohexane, N, N-diglycidylaniline; glycidyl (meth) acrylate and a compound having an ethylenically unsaturated double bond And an epoxy resin having a butadiene structure. These may be used alone or in combination of two or more. Among these, a trihydroxyphenylmethane type epoxy resin and a biphenyl type epoxy resin may be used from the viewpoint of low linear expansion and high elastic modulus of the semiconductor package. Thereby, the reflow resistance of the semiconductor device can be improved, and the warpage of the semiconductor package can be suppressed.

  In the present embodiment, the lower limit value of the content of the thermosetting resin is, for example, preferably 3% by mass or more, more preferably 5% by mass or more, with respect to the entire thermosetting resin composition. preferable. Thereby, the fluidity | liquidity at the time of shaping | molding can be improved. For this reason, it is possible to improve filling properties and molding stability. Moreover, the upper limit of content of the said thermosetting resin is although it does not specifically limit, For example, it is preferable that it is 30 mass% or less with respect to the whole thermosetting resin composition, and it is 25 mass% or less. Is more preferable. Thereby, moisture resistance reliability and reflow resistance of the semiconductor device can be improved. Moreover, the curvature of the resin-sealed substrate can be suppressed by controlling the content of the thermosetting resin in such a range.

(Curing agent)
The thermosetting resin composition of this embodiment may contain a curing agent.
The curing agent is not particularly limited as long as it is a compound that reacts with a thermosetting resin such as an epoxy resin.

  Examples of the curing agent include linear aliphatic diamines having 2 to 20 carbon atoms such as ethylenediamine, trimethylenediamine, tetramethylenediamine, and hexamethylenediamine, metaphenylenediamine, paraphenylenediamine, paraxylenediamine, and 4,4. '-Diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodicyclohexane, bis (4-aminophenyl) phenylmethane, Aminos such as 1,5-diaminonaphthalene, meta-xylenediamine, para-xylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, dicyanodiamide; resodies such as aniline-modified resole resins and dimethyl ether resole resins Type phenolic resin; novolac type phenolic resin such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin; polyfunctional type phenol resin such as trihydroxyphenylmethane type phenol resin; phenylene skeleton-containing phenol aralkyl resin Phenol aralkyl resins such as biphenylene skeleton-containing phenol aralkyl resins; phenol resins having a condensed polycyclic structure such as naphthalene skeleton and anthracene skeleton; polyoxystyrenes such as polyparaoxystyrene; hexahydrophthalic anhydride (HHPA), methyltetrahydroanhydride Alicyclic acid anhydrides such as phthalic acid (MTHPA), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzopheno Acid anhydrides including aromatic acid anhydrides such as tetracarboxylic acid (BTDA); Polymercaptan compounds such as polysulfides, thioesters, thioethers; Isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; Carboxylic acid-containing polyester resins, etc. Organic acids and the like. These may be used alone or in combination of two or more.

  Among these, as the curing agent, a compound having at least two phenolic hydroxyl groups in one molecule is preferable from the viewpoint of moisture resistance, reliability, and the like. Phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol Novolak type resins such as novolak resins and silicon-modified phenol novolak resins; resol type phenol resins; polyoxystyrenes such as polyparaoxystyrene; phenylene skeleton-containing phenol aralkyl resins, biphenylene skeleton-containing phenol aralkyl resins, trihydroxyphenylmethane type phenol resins Etc. are exemplified. Among these, from the viewpoints of heat resistance of the cured product of the thermosetting resin composition and workability at the time of mold molding, a trihydroxyphenylmethane type phenol resin can be used.

  In the present embodiment, the lower limit of the content of the curing agent is not particularly limited, but is preferably 1.0% by mass or more, for example, 2.0% by mass with respect to the entire thermosetting resin composition. More preferably, it is more preferably 3.0% by mass or more. Thereby, the excellent fluidity | liquidity can be implement | achieved at the time of shaping | molding, and the improvement of a filling property or a moldability can be aimed at. On the other hand, the content of the curing agent is not particularly limited. For example, the content of the curing agent is preferably 9% by mass or less, more preferably 8% by mass or less, based on the entire thermosetting resin composition. It is particularly preferably 7% by mass or less. Thereby, moisture resistance reliability and reflow resistance of the semiconductor device can be improved.

(Inorganic filler)
The thermosetting resin composition of the present embodiment can contain an inorganic filler.

  Examples of the inorganic filler include silica such as fused crushed silica, fused spherical silica, crystalline silica, and secondary agglomerated silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica; glass fiber and the like. Among these, fused spherical silica is particularly preferable. In addition, the particle shape of the silica is preferably infinitely spherical. These may be used alone or in combination of two or more.

The upper limit of the average particle diameter d50 of the inorganic filler is, for example, 5 μm or less, preferably 4.5 μm or less, more preferably 4 μm or less, from the viewpoint of mold filling. Thereby, the filling property in the metal mold | die which enlarged the area can be improved. Moreover, the lower limit value of the average particle diameter d50 of the inorganic filler is not particularly limited, but may be, for example, 0.01 μm or more.
In the present embodiment, the average particle diameter d50 of the inorganic filler can be measured using, for example, a laser diffraction particle size distribution measuring device (LA-500, manufactured by HORIBA).

  In the present embodiment, the lower limit value of the content of the inorganic filler is, for example, 70% by mass or more, preferably 75% by mass or more, and more preferably 80% by mass with respect to the entire thermosetting resin composition. % Or more. Thereby, the low moisture absorption property and low thermal expansion property of the cured product of the thermosetting resin composition can be improved, and the moisture resistance reliability and reflow resistance of the semiconductor device can be improved more effectively. Moreover, the upper limit value of the content of the inorganic filler is not particularly limited, but is preferably 95% by mass or less, and 93% by mass or less, for example, with respect to the entire thermosetting resin composition. More preferably, it is particularly preferably 90% by mass or less. Thereby, it becomes possible to improve the fluidity | liquidity and filling property at the time of shaping | molding of a thermosetting resin composition more effectively. Moreover, the curvature of a resin sealing board | substrate can be suppressed by making content of an inorganic filler into the said range.

  The thermosetting resin composition of this embodiment can contain silicone oil.

（ただし、上記一般式（１）において、Ｒ１は炭素数１ないし１２のアルキル基、アリール基、アラルキル基から選択される有機基であり、互いに同一であっても異なっていてもよい。Ｒ２は炭素数１ないし９のアルキレン基を示す。Ｒ３は水素原子又は炭素数１ないし９のアルキル基である。Ａは、炭素、窒素、酸素、硫黄、水素から選択される原子から構成される基である。Ｒ４は炭素数１ないし１２のアルキル基、アリール基、アラルキル基から選択される有機基、又は炭素、窒素、酸素、硫黄、水素から選択される原子から構成される基であり、互いに同一であっても異なっていてもよい。また、平均値であるｌ、ｍ、ｎ、ａ、及びｂについては以下の関係にある。
ｌ≧０、ｍ≧０、ｎ≧１、ｌ＋ｍ＋ｎ≧５、
０．０２≦ｎ／（ｌ＋ｍ＋ｎ）≦０．８、
ａ≧０、ｂ≧０、ａ＋ｂ≧１） As the silicone oil, for example, a compound having a polyether group in the molecule is used. As such a silicone oil, a silicone oil represented by the following general formula (1) can be used. These may be used alone or in combination of two or more.

(However, in the general formula (1), R1 is an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group, and may be the same or different from each other. Represents an alkylene group having 1 to 9 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and A represents a group composed of atoms selected from carbon, nitrogen, oxygen, sulfur and hydrogen. R4 is an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group, or a group composed of atoms selected from carbon, nitrogen, oxygen, sulfur, and hydrogen, and is the same as each other In addition, the average values l, m, n, a, and b have the following relationship.
l ≧ 0, m ≧ 0, n ≧ 1, l + m + n ≧ 5,
0.02 ≦ n / (l + m + n) ≦ 0.8,
a ≧ 0, b ≧ 0, a + b ≧ 1)

  The repeating number (n) of the polyether group-containing unit in the silicone oil represented by the general formula (1) is 0.02 with respect to the degree of polymerization (l + m + n) of the silicone oil represented by the general formula (1). As described above, it is preferably in the range of 0.8 or less. When the ratio of the repeating number (n) of the polyether group-containing unit is within the above range, the compatibility between the silicone oil and the resin component is in an appropriate state, thereby exhibiting a surface active action, and the resin component is made uniform. An effect will be acquired. Further, when the ratio of the number of repeating polyether group-containing units (n) is within the above range, an increase in the amount of moisture absorption of the resin composition due to the presence of excess polyether groups can be suppressed, and the resulting decrease in solder heat resistance. Can be suppressed.

  The silicone oil of the present embodiment is not particularly limited in the average degree of polymerization, and in order to impart affinity with an epoxy resin, a phenol resin, and an inorganic filler, in addition to a methyl group and a phenyl group, C, O, N, You may have an organic group containing S atom etc.

  For example, the silicone oil represented by the general formula (1) has various groups composed of atoms selected from carbon, nitrogen, oxygen, sulfur and hydrogen atoms in addition to the polyether group in the molecule. May be. Examples of these groups include epoxy groups, hydroxyl groups, amino groups, ureido groups, functional groups having reactivity with epoxy resins and curing agents, and aryl groups.

  In the present embodiment, the lower limit value of the silicone oil content is not particularly limited, but is, for example, 0.05% by mass or more, preferably 0.08% by mass or more, with respect to the entire thermosetting resin composition. More preferably, it is 0.1% by mass or more. Thereby, silicone oil can bleed to the interface of the hardened | cured material of a thermosetting resin composition, and the wettability of the said interface can be optimized. Moreover, although the upper limit of content of silicone oil is not specifically limited, For example, it is 1 mass% or less with respect to the whole thermosetting resin composition, Preferably it is 0.5 mass% or less. Thereby, since the amount of bleeding of a silicone oil can be controlled appropriately, the fall of the moldability of the hardened | cured material of a thermosetting resin composition can be suppressed.

The thermosetting resin composition of this embodiment may contain a cyanate resin.
Thereby, about the hardened | cured material of a thermosetting resin composition, low linear expansion and improvement of an elasticity modulus and rigidity can be aimed at. In addition, the heat resistance and moisture resistance of the semiconductor device can be improved.
Examples of the cyanate resin include novolak type cyanate resin; bisphenol type cyanate resin such as bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethylbisphenol F type cyanate resin; reaction of naphthol aralkyl type phenol resin and cyanogen halide. 1 type or 2 types or more selected from naphthol aralkyl type cyanate resin obtained by 1; dicyclopentadiene type cyanate resin; biphenylene skeleton containing phenol aralkyl type cyanate resin. Among these, from the viewpoint of reducing linear expansion and improving the elastic modulus and rigidity, it is more preferable to include at least one of a novolac-type cyanate resin and a naphthol aralkyl-type cyanate resin, and include a novolac-type cyanate resin. Is particularly preferred.

  The lower limit of the content of the cyanate resin is, for example, preferably 3% by mass or more, and more preferably 5% by mass or more with respect to the entire thermosetting resin composition. Thereby, low linear expansion and high elastic modulus of the cured product of the thermosetting resin composition can be achieved. On the other hand, the upper limit of the content of the cyanate resin is, for example, preferably 30% by mass or less, and more preferably 20% by mass or less, with respect to the entire thermosetting resin composition. Thereby, the heat resistance and moisture resistance of the cured product of the thermosetting resin composition can be improved.

(Curing accelerator)
The thermosetting resin composition of the present embodiment may contain a curing accelerator.
The curing accelerator is not particularly limited as long as it accelerates the curing reaction between the epoxy group of the epoxy resin and the curing agent, for example.
Examples of the curing accelerator include phosphorus atom-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphonium compounds and silane compounds; -Diazabicyclo [5.4.0] undecene-7, benzyldimethylamine, 2-methylimidazole and the like are exemplified and selected from nitrogen atom-containing compounds such as amidines and tertiary amines, and quaternary salts of the amidines and amines. One type or two or more types can be included. Among these, it is more preferable that a phosphorus atom containing compound is included from a viewpoint of improving curability. In addition, from the viewpoint of improving the balance between moldability and curability, it has latent properties such as tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds. It is more preferable to include those. These may be used alone or in combination of two or more.
Examples of the organic phosphine include a first phosphine such as ethylphosphine and phenylphosphine; a second phosphine such as dimethylphosphine and diphenylphosphine; and a third phosphine such as trimethylphosphine, triethylphosphine, tributylphosphine, and triphenylphosphine. Is mentioned.
More preferable are curing accelerators having a latent property with little rapid thickening after the thermosetting resin composition is melted.

  In addition to the above components, the thermosetting resin composition of the present embodiment includes a coupling agent, a leveling agent, a colorant, a release agent, a low stress agent, a photosensitizer, an antifoaming agent, and an ultraviolet absorber as necessary. One or two or more additives selected from foaming agents, antioxidants, flame retardants, and ion scavengers may be contained.

  Examples of the coupling agent include epoxy silane coupling agents, cationic silane coupling agents, aminosilane coupling agents, γ-glycidoxypropyltrimethoxysilane coupling agents, phenylaminopropyltrimethoxysilane coupling agents, and mercapto. Examples thereof include silane coupling agents such as silane coupling agents, titanate coupling agents, and silicone oil type coupling agents. Examples of the leveling agent include acrylic copolymers. Examples of the colorant include carbon black. Examples of the release agent include natural waxes, synthetic waxes such as montanic acid esters, higher fatty acids or metal salts thereof, paraffin, polyethylene oxide and the like. Examples of the low stress agent include silicone rubber. Examples of the ion scavenger include hydrotalcite. Examples of the flame retardant include aluminum hydroxide. In the present embodiment, for example, the silicone oil and the release agent may be used in combination.

  The thermosetting resin composition of the present embodiment may be in the form of granules or a sheet. From the viewpoint of mold filling, a granular thermosetting resin composition may be used, and from the viewpoint of productivity, a sheet-like thermosetting resin composition may be used.

  In the present embodiment, as a method for producing a granular thermosetting resin composition, for example, it is melt-kneaded inside a rotor composed of a cylindrical outer peripheral portion having a plurality of small holes and a disc-shaped bottom surface. The thermosetting resin composition is supplied, and the thermosetting resin composition is obtained by passing through small holes by centrifugal force obtained by rotating the rotor (hereinafter also referred to as “centrifugal milling method”). ); Each raw material component of the thermosetting resin composition is premixed with a mixer, heated and kneaded with a kneader such as a roll, a kneader or an extruder, and then cooled and pulverized to obtain a pulverized product. A method obtained by removing coarse particles and fine powder (hereinafter also referred to as “grinding and sieving method”); after premixing each raw material component of the thermosetting resin composition with a mixer, a small diameter is provided at the tip of the screw. Heat using an extruder equipped with multiple dies. A method of performing kneading and cutting a molten resin extruded in a strand form from a small hole arranged in a die with a cutter that slides and rotates substantially parallel to the die surface (hereinafter also referred to as “hot cut method”) Etc.).

  Moreover, as a manufacturing method of a sheet-like thermosetting resin composition, the prepared varnish-like thermosetting resin composition is applied and dried on a base film to form a sheet, and the solvent is volatilized. Is mentioned. Thereby, a resin sheet can be produced. Examples of the application method include a coating method using a coating machine such as a comma coater and a die coater, and a printing method such as stencil printing and gravure printing. As an example of a method for preparing a varnish-like thermosetting resin composition, for example, a resin composition obtained by kneading each raw material component excluding non-reactive volatile components is dissolved in an organic solvent or the like. There is a way to distribute. The resin sheet may be formed into a sheet shape by extruding the thermosetting resin composition. The surface of the resin sheet may be protected and covered with a film. The resin sheet may be a sheet or a roll that can be wound.

  Next, the physical properties of the thermosetting resin composition of the present embodiment will be described.

  In this embodiment, the upper limit of the surface energy of the cured plate of the thermosetting resin composition cured at 175 ° C. is, for example, 30 mN / m or less, preferably 28 mN / m or less, more preferably 26 mN / m. m or less. Thereby, it can suppress that the molded object which is the hardened | cured material of the said thermosetting resin composition sticks to such a metal mold | die at the time of the metal mold | die which enlarged the area.

  Moreover, the lower limit of the surface energy of the cured plate of the thermosetting resin composition cured at 175 ° C. is not particularly limited, but may be, for example, 22 mN / m or more, or 23 mN / m or more. Thereby, the moldability of the hardened | cured material of a thermosetting resin composition can be improved.

In the present embodiment, the surface energy can be calculated from the ethanol fraction in the ethanol-based ink and the degree of ink repelling on the surface of the cured plate of the thermosetting resin composition. Specifically, first, using a mold, for example, a cured plate of a thermosetting resin composition cured at 175 ° C. for 120 seconds is prepared. At this time, the surface roughness Ra of the cured plate is, for example, 0.10 μm or less. Subsequently, a line is drawn with ethanol-based ink on the surface of the cured plate having a small surface roughness. The ethanol fraction in the ethanol-based ink can be gradually increased from 20%, for example. The ethanol fraction when the drawn line is maintained can be measured, and the corresponding surface energy can be calculated from the ethanol fraction.
For example, the surface energy can be calculated by appropriately changing and adjusting the mixing ratio of ethanol and water as a reagent. As an example, when the ethanol fraction is 50% (ethanol / water = 50/50), the surface energy is 28.51 mN / m, and when the ethanol fraction is 100%, the surface energy is 22 mN / m. Can do. The surface roughness Ra can be measured according to JIS B 0601-1982.

  As described above, as a result of the study by the present inventors, the surface energy in the cured body of the thermosetting resin composition of the present embodiment can be calculated and calculated by a simple method using ethanol-based ink. It was also found that the surface energy is appropriate as an index for evaluating mold adhesion.

  In the present embodiment, for example, the surface energy is controlled by appropriately selecting the type and amount of each component contained in the thermosetting resin composition, the preparation method of the thermosetting resin composition, and the like. Is possible. Among these, for example, adding a low molecular weight component that bleeds to the surface of a cured product such as silicone oil or wax, adjusting the affinity between the silicone oil and the epoxy resin, the crosslinking density of the cured product, etc. Listed as an element to bring the surface energy into the desired numerical range

  In the thermosetting resin composition of the present embodiment, the lower limit of the gel time at 175 ° C. is, for example, 50 seconds or more, preferably 53 seconds or more, and more preferably 55 seconds or more. Thereby, the filling property to the metal mold | die which enlarged the area can be improved. The upper limit of the gel time at 175 ° C. is not particularly limited, but may be 120 seconds or less, 100 seconds or less, or 80 seconds or less, for example. Thereby, productivity can be improved.

  The lower limit of the glass transition temperature (Tg) of the cured product of the thermosetting resin composition of the present embodiment is, for example, 145 ° C. or higher, preferably 150 ° C. or higher, more preferably 155 ° C. or higher. Thereby, the thermal decomposition of the hardened | cured material of a thermosetting resin composition can be suppressed. Moreover, the curvature of the resin sealing substrate can be suppressed. On the other hand, the upper limit value of the glass transition temperature (Tg) is not particularly limited, but may be, for example, 250 ° C. or less.

  In addition, the upper limit of the collapse angle in the granular thermosetting resin composition is preferably 35 ° or less, more preferably 30 ° or less, and further preferably 25 ° or less. Thereby, when a granular thermosetting resin composition is conveyed using conveyance means, such as a vibration feeder, it can carry out stably, it is hard to raise | generate fixation, clogging, etc. For this reason, the filling property to the metal mold | die which enlarged the area can be improved. On the other hand, the lower the collapse angle, the less likely it is to cause sticking or clogging, so the lower limit is not particularly limited, but can be, for example, 1 ° or more, or 10 ° or more.

  In this embodiment, as a method for measuring the collapse angle, a granular thermosetting resin composition is dropped and deposited from a hole of a funnel onto a horizontal plate of a certain area until it has a certain shape, and a conical granule is obtained. To form. Next, by dropping a weight of a certain weight on the same pedestal as the horizontal plate, a certain impact is given to the granules, and the partially thermosetting resin composition spontaneously flows from the horizontal plate. After falling off, with respect to the remaining conical granules, the collapse angle can be determined as the elevation angle from the point on the outer periphery of the bottom surface to the apex of the cone. The elevation angle in the granule before impact is referred to as the repose angle, and the difference between the repose angle and the collapse angle is referred to as the difference angle. The difference angle is an index representing the ease of collapse of the granular thermosetting resin composition due to vibration from a conveying device such as a vibration feeder, and the greater the difference angle, the easier it is to collapse. The angle is preferably 10 ° or more, and more preferably 15 ° or more. A powder tester (manufactured by Hosokawa Micron Co., Ltd.) can be used as an apparatus for measuring the collapse angle and the repose angle.

  Moreover, the upper limit of the average particle diameter in a granular thermosetting resin composition is 1.0 mm or less, for example, Preferably it is 0.7 mm or less, More preferably, it is 0.6 mm or less. Thereby, the filling property to the metal mold | die which enlarged the area can be improved. The lower limit value of the average particle diameter is not particularly limited, but is, for example, 0.1 mm or more, may exceed 0.3 mm, or may be 0.4 mm or more. Thereby, the granular thermosetting resin composition excellent in manufacturing stability is realizable.

(Electronic device)
The electronic device 100 of this embodiment will be described. FIG. 1 is a cross-sectional view illustrating a configuration of an electronic device 100 according to the present embodiment.

  The electronic device 100 of this embodiment can be a semiconductor device including a resin sealing substrate 110 and an electronic component (semiconductor element 140) mounted on the resin sealing substrate 110. In this embodiment, the resin sealing substrate 110 is provided with a cured product of the thermosetting resin composition.

  The resin sealing substrate 110 (for example, a MIS substrate (Molded Interconnect Substrate)) can include at least the insulating layer 112 and the metal layer 130. The insulating layer 112 is composed of a cured product of the thermosetting resin composition of the present embodiment. Thereby, it is possible to obtain a resin-encapsulated substrate 110 that is excellent in manufacturing stability and in which substrate warpage is suppressed. The insulating layer 112 may be configured not to contain a fiber base material such as glass cloth. Thereby, the resin sealing substrate 110 can be a coreless resin substrate. The coreless resin substrate may have a semiconductor chip built in the insulating layer. This semiconductor element can be electrically connected through a metal layer (for example, via wiring).

  In the resin sealing substrate 110, the metal layer 130 that is a post electrically connects the upper surface 114 and the lower surface of the resin sealing substrate 110 via the via wiring 120. The via wiring 120 and the via wiring 120 may be made of a metal such as copper, for example.

  Further, the upper surface 114 of the resin sealing substrate 110 may be a polished surface. Further, the upper surface 114 of the resin sealing substrate 110 and the upper surface of the metal layer 130 may constitute the same plane. A solder resist layer (not shown) may be formed on the upper surface 114 and the lower surface of the resin sealing substrate 110.

  The semiconductor element 140 may be fixed on the resin sealing substrate 110 via an adhesive layer 160. The semiconductor element 140 may be electrically connected to the resin sealing substrate 110 via the wire bonding 150, but may be electrically connected by flip chip connection. The semiconductor element 140 is sealed so as to be covered with a cured product (sealing material layer 170) of a general sealing thermosetting resin composition.

  Examples of the semiconductor element 140 include an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element. Examples of the structure of the semiconductor package including the semiconductor element 140 include a ball grid array (BGA), a MAP type BGA, and the like. Also, wafer level packages (WLP) such as chip size package (CSP), quad flat non-ready package (QFN), embedded WLP (eWLP), Fan In WLP and Fan Out WLP, small outline non Examples include leaded package (SON), lead frame BGA (LF-BGA), and the like.

  Next, a method for manufacturing the electronic device 200 will be described based on the manufacturing process of the resin sealing substrate 250. FIG. 2 is a process cross-sectional view of the manufacturing process of the electronic device 200.

In this embodiment, the manufacturing method of the resin sealing substrate 250 can include the following steps 1 to 3.
Step 1 includes a metal layer forming step of forming a patterned metal layer 230 on the support substrate 210.
Step 2 includes an insulating layer forming step of forming an insulating layer 234 in which the metal layer 230 is embedded.
Step 3 includes a polishing step of exposing the metal layer 230 by polishing the surface (upper surface 226) of the insulating layer 234.
By repeating these steps 1 to 3, an interlayer connection wiring can be formed in an interlayer insulating layer composed of one or more insulating layers.
The said insulating layer can be comprised with the hardened | cured material of the thermosetting resin composition of this embodiment.
Hereinafter, each step will be described.

  First, as shown to Fig.2 (a), the support base material 210 is prepared. A carrier foil 212 may be formed on the support substrate 210. The support base 210 is not particularly limited as long as it is a base substrate having characteristics such as flatness, rigidity, and heat resistance. For example, a metal plate can be used. Examples of the metal plate include a copper plate, an aluminum plate, an iron plate, a steel (steel) plate, a nickel plate, a copper alloy plate, a 42 alloy plate, and a stainless plate. The steel (steel) plate may be an embodiment of a cold rolled steel plate such as SPCC (Steel Plate Cold Commercial). Further, the metal plate may be a single wafer processed into a frame shape, or may be a hoop-like continuous shape. The support substrate 210 used in the present embodiment preferably has a large area so that a plurality of semiconductor elements can be arranged on a plane. The planar shape of the support base 210 in the top view is not particularly limited, and may be, for example, a rectangular shape or a circular shape, but may be a rectangular shape from the viewpoint of productivity.

Subsequently, after the patterned metal layer 220 is formed, the via wiring 222 can be formed on the metal layer 220.
As the patterning method, for example, a photolithography method can be used. As a specific example, first, a photosensitive resin film made of a photosensitive resin composition is formed on the support substrate 210. As a forming method, for example, a method of drying a coating film obtained by applying a photosensitive resin composition using a coater or a spinner, or laminating a resin sheet made of the photosensitive resin composition by thermocompression bonding or the like. The photosensitive resin film which consists of a photosensitive resin composition is formed by the method to do. Subsequently, an opening having a predetermined pattern is formed in the photosensitive resin film. As a method for forming the opening, for example, an exposure development method or a laser processing method can be used. Subsequently, the opening is embedded with a metal film. Examples of the burying method include an electroless plating method and a plating method. Examples of the material for the metal film include copper, copper alloy, 42 alloy, nickel, iron, chromium, tungsten, gold, solder, and the like, but copper may also be used. Subsequently, the photosensitive resin film is removed. Examples of the removal method include a method of removing the photosensitive resin film using a stripping solution, an ashing process, a method of removing a residue of the photosensitive resin film adhering to the base after performing the ashing process, etc. Is mentioned. Especially, it is preferable to employ | adopt the method of peeling the photosensitive resin film using a peeling liquid from a viewpoint of improving production efficiency. Specific examples of the stripping solution include an organic sulfonic acid-based stripping solution containing an alkylbenzene sulfonic acid, an organic amine-based stripping solution containing an organic amine such as monoethanolamine, and an aqueous system in which an organic alkali or a fluorine compound is mixed with water Examples include resist stripping solutions. Note that a method of polishing the metal layer using a chemical mechanical polishing (CMP) apparatus may be performed.
Thus, a patterned metal layer is obtained. Examples of such a metal layer include a wiring circuit, a via wiring, and a conductive post.

  Subsequently, as illustrated in FIG. 2B, an insulating layer 224 is formed so as to bury the metal layer 220 and the via wiring 222. As the insulating layer 224, it is comprised by the hardened | cured material of the thermosetting resin composition of this embodiment. That is, the metal layer 220 and the via wiring 222 can be sealed with the cured product of the thermosetting resin composition of the present embodiment.

  In the formation method of the insulating layer 224, for example, a granular thermosetting resin composition or a sheet-like thermosetting resin composition is used as a sealing material, and compression molding is used as a forming method. it can.

  Here, in this embodiment, an outline of compression molding using a granular thermosetting resin composition will be described.

First, the granular thermosetting resin composition is spread uniformly on the bottom surface of the lower mold cavity of the compression mold. For example, the particulate thermosetting resin composition may be transported using a transporting means such as a vibration feeder and disposed on the bottom surface of the lower mold cavity.
Subsequently, the support base 210 on which the metal layer 220 and the via wiring 222 are formed is fixed to the upper mold of the compression molding die by a fixing means such as clamping or suction. Subsequently, by reducing the distance between the upper mold and the lower mold of the mold under reduced pressure, the granular thermosetting resin composition is heated to a predetermined temperature in the lower mold cavity to be in a molten state. Subsequently, the upper mold and the lower mold of the mold are bonded to press the molten thermosetting resin composition against the metal layer 220 and the via wiring 222 fixed to the upper mold. Thereafter, the thermosetting resin composition is cured for a predetermined time while maintaining the state in which the upper mold and the lower mold are bonded. Thereby, the insulating layer 224 in which the metal layer 220 and the via wiring 222 on the support base 210 are sealed can be formed.
In the present embodiment, even when a sheet-like thermosetting resin composition is used instead of the granular thermosetting resin composition, the above compression molding can be used.

  Here, in the case of performing compression molding, it is preferable to perform sealing while reducing the pressure inside the mold, and it is more preferable to be under vacuum conditions. Thereby, the patterned metal layers such as the metal layer 220 and the via wiring 222 can be embedded with the cured product (insulating layer 224) of the thermosetting resin composition without leaving a filling portion.

  The molding temperature in compression molding may be, for example, 100 ° C. or more and 200 ° C. or less, or 120 ° C. or more and 180 ° C. or less. The molding pressure may be, for example, 0.5 MPa or more and 12 MPa or less, or 1 MPa or more and 10 MPa or less. The molding time may be, for example, 30 seconds to 15 minutes, or 1 minute to 10 minutes. In the present embodiment, by setting the molding temperature, pressure, and time within the above ranges, it is possible to prevent the occurrence of a portion that is not filled with the molten sealing material.

  Moreover, you may post-cure after sealing with respect to the hardened | cured material (insulating layer 224) of the obtained thermosetting resin composition. The post cure temperature may be, for example, 150 ° C. or more and 200 ° C. or less, or 165 ° C. or more and 185 ° C. or less. The post cure time may be, for example, 1 hour or more and 5 hours or less, or 2 hours or more and 4 hours or less.

  Subsequently, as shown in FIG. 2C, the surface of the patterned metal layer (via wiring 222) is polished by polishing the surface (upper surface 226) of the insulating layer 224 by a method such as grinding or chemical etching. Expose. At this time, a polished surface is formed on the upper surface 226. As a grinding method, for example, chemical mechanical polishing (CMP) can be used.

  Subsequently, as shown in FIG. 2D, a patterned metal layer 230 is formed on the upper surface 226 of the insulating layer 224 in the same manner as the metal layer 220. Subsequently, as illustrated in FIG. 2E, an insulating layer 234 in which the metal layer 230 is embedded is formed in the same manner as the insulating layer 224. Subsequently, as shown in FIG. 2F, the upper surface 236 of the insulating layer 234 is polished by the above polishing method, thereby forming a polished surface on the upper surface 236 and exposing the upper surface of the metal layer 230. Can do. After repeating the above steps, the support substrate 210 and the carrier foil 212 were peeled off to further form the via wiring 232, the metal layer 240, and the insulating layer 244 as shown in FIG. A resin sealing substrate 250 is obtained. In addition, a polishing surface may be formed on the upper surface 246 of the resin sealing substrate 250.

  In the present embodiment, by repeating the above steps 1 to 3, the wiring layer of the resin sealing substrate 250 can be made one layer or two or more layers. The interlayer insulating layer of the resin sealing substrate 250 is composed of a cured product of the thermosetting resin composition of the present embodiment. For this reason, the curvature of the resin sealing substrate 250 can be suppressed. Moreover, it can be set as the resin sealing substrate 250 excellent in manufacturing stability.

  Here, the resin sealing substrate 250 shown in FIG. 2H can arrange not only one semiconductor element 260 but also a plurality of semiconductor elements 260 in a plane. That is, the resin sealing substrate 250 can have a structure obtained by molding using a large-area mold.

An example in the case of having a mounting area where a plurality of semiconductor elements (electronic components) can be mounted in a plane is shown in FIG. FIG. 3 is a top view showing an example of the configuration of the resin sealing substrate 300 according to the present embodiment. As shown in FIG. 3, the resin sealing substrate 300 may have a plurality of semiconductor element mounting areas 310 and 320 formed in a plane.
Semiconductor elements (electronic components) are mounted on the semiconductor element mounting areas 310 and 320 so as to be separated from each other.

  Returning to FIG. 2H, the semiconductor element 260 is mounted on the resin sealing substrate 250. Thereby, the electronic device 200 is obtained. The semiconductor element 260 in the electronic device 200 can be electrically connected to the resin sealing substrate 250 by flip chip connection via the solder bump 280. The semiconductor element 260 on the resin sealing substrate 250 is sealed with a general sealing thermosetting resin and is covered with a sealing material layer 270.

  In the present embodiment, as shown in FIG. 3, the resin sealing substrate 300 on which a plurality of semiconductor elements are mounted is separated into individual pieces after sealing them together. Thereby, the separated electronic device 200 as shown in FIG. 2F can be obtained.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail with reference to an Example, this invention is not limited to description of these Examples at all.

(Preparation of thermosetting resin composition)
About the Example and the comparative example, the thermosetting resin composition was prepared as follows. First, according to the formulation shown in Table 1, each component was mixed with a mixer to obtain a mixture. Next, an inorganic filler was added to the mixture according to the formulation shown in Table 1, and then mixed using a mixer. Next, the obtained mixture was roll kneaded at 70 to 100 ° C.
(Preparation of thermosetting resin composition of pulverized product)
The obtained kneaded mixture was cooled and pulverized to obtain a pulverized thermosetting resin composition.

(Preparation of granule thermosetting resin composition)
As a material of the cylindrical outer peripheral portion 602 shown in FIG. 5A, an iron punched wire net having a small hole with a hole diameter of 2.5 mm was used. A punched wire mesh having a height of 25 mm and a thickness of 1.5 mm processed into a cylindrical shape was attached to the outer periphery of a rotor 601 having a diameter of 20 cm, thereby forming a cylindrical outer peripheral portion 602. The rotor 601 was rotated at 3000 RPM, and the cylindrical outer peripheral portion 602 was heated to 115 ° C. with an exciting coil. After the rotational speed of the rotor 601 and the temperature of the cylindrical outer peripheral portion 602 are in a steady state, the components shown in Table 1 are obtained by melt-kneading with a twin-screw extruder 609 while degassing with a degassing device. The melt obtained is fed into the rotor 601 at a rate of 2 kg / hr from above the rotor 601 through the double-pipe cylindrical body 605, and is cylindrical by centrifugal force obtained by rotating the rotor 601. A granular thermosetting resin composition was obtained by passing a plurality of small holes in the outer peripheral portion 602. The granular thermosetting resin composition discharged through the small holes of the cylindrical outer peripheral portion 602 is collected, for example, in an outer tank 608 installed around the rotor 601. The rotor 601 is connected to the motor 610 and can be rotated at an arbitrary number of rotations. A cylindrical outer peripheral portion 602 having a plurality of small holes installed on the outer periphery of the rotor 601 includes a magnetic material 603 shown in FIG. The cylindrical outer peripheral portion 602 is caused by eddy current loss and hysteresis loss caused by the passage of alternating magnetic flux generated by energizing the AC coil generated by the AC power generator 606 to the exciting coil 604 provided in the vicinity thereof. Heated. A cooling jacket 607 is provided on the outer periphery of the collision surface to cool the collision surface. Here, FIG. 5B shows a sectional view of the exciting coil 604 for heating the rotor 601 and the cylindrical outer peripheral portion 602 of the rotor, and FIG. 5C shows the thermosetting resin composition melt-kneaded. A cross-sectional view of a double-pipe cylindrical body 605 that supplies an object to a rotor 601 is shown.

硬化促進剤２：トリフェニルホスフィン（ケイアイ化成社製、ＰＰ−３６０）
（無機充填材）
無機充填材１：溶融球状シリカ（龍森社製、ＭＵＦ−４６Ｖ）
無機充填材２：溶融球状シリカ（マイクロン社製、ＨＳ−２０６）
（シリコーンオイル）
シリコーンオイル１：下記式（５）で表されるシリコーンオイル（東レ・ダウコーニング社製、ＦＺ−３７３０）

Details of each component in Table 1 are as follows.
(Thermosetting resin)
Thermosetting resin 1: biphenyl type epoxy resin (YX4000HK, manufactured by Mitsubishi Chemical Corporation)
Thermosetting resin 2: Trihydroxyphenylmethane type epoxy resin (manufactured by Mitsubishi Chemical Corporation, 1032H-60)
Thermosetting resin 3: phenol aralkyl type epoxy resin containing biphenylene skeleton (Nippon Kayaku Co., Ltd., NC-3000L)
(Curing agent)
Curing agent 1: Trihydroxyphenylmethane type phenol resin (Air Water Chemical Co., HE910-20)
Hardener 2: Biphenylene skeleton-containing phenol aralkyl resin (Nippon Kayaku Co., Ltd., GPH-65)
(Curing accelerator)
Curing accelerator 1: Curing accelerator represented by the following formula (tetraphenylphosphonium bis (naphthalene-2,3-dioxy) phenyl silicate)

Curing accelerator 2: triphenylphosphine (manufactured by Keiai Kasei Co., Ltd., PP-360)
(Inorganic filler)
Inorganic filler 1: fused spherical silica (manufactured by Tatsumori, MUF-46V)
Inorganic filler 2: fused spherical silica (manufactured by Micron, HS-206)
(Silicone oil)
Silicone oil 1: Silicone oil represented by the following formula (5) (FZ-3730, manufactured by Toray Dow Corning)

  The following evaluation was performed about the thermosetting resin composition of the Example in the said Table 1, and a comparative example.

(Surface energy)
Using a compression molding machine (manufactured by TOWA Co., Ltd.), while reducing the inside of the cavity, the mold temperature was 175 ° C., the clamping pressure was 9.6 MPa, the injection (compression) time was 20 seconds, the curing time was 120 seconds, and MapBGA (circuit or A BT resin substrate having no via wiring, PKG outer dimensions: 234 mm × 71 mm × 0.2 mm, no chip mount) was used to obtain a molded product using a release film. The surface roughness Ra of the obtained molded product was 0.1 μm. The surface roughness Ra was measured by a laser microscope (VK-9700, 9710 manufactured by Keyence Corporation).
Next, prepare a solution with a ratio of ethanol and pure water, apply this solution to the surface of the molded product with a brush, and determine the surface energy from the mixing ratio of ethanol / pure water that makes the solution wet. Was calculated. The surface energy of ethanol (reagent) is 22 mN / m.

(Geltime)
The obtained thermosetting resin composition is placed on a hot plate controlled at 175 ° C., and kneaded with a spatula at a stroke of about 1 time / second. The time from when the resin composition was melted by heat until it was cured was measured and used as the gel time. The gel time indicates that the smaller the value, the faster the curing.

(Glass transition temperature (Tg))
Using a transfer molding machine, the resin composition was injection molded at a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 3 minutes to obtain a test piece of 15 mm × 4 mm × 4 mm. Then, after the obtained test piece was post-cured at 175 ° C. for 4 hours, using a thermomechanical analyzer (manufactured by Seiko Denshi Kogyo Co., Ltd., TMA100), a measurement temperature range of 0 ° C. to 320 ° C., a rate of temperature increase The measurement was performed under the condition of 5 ° C./min. The glass transition temperature was calculated from this result. The unit of glass transition temperature is ° C.

(Collapse angle)
Repose angle, collapse angle, difference angle: As shown in FIG. 4 (a), at the center of a horizontal plate 505 having a disc shape with a diameter of 80 mm provided in a powder tester (model PT-E manufactured by Hosokawa Micron Corporation). The granular thermosetting resin composition 502 was poured from the vertical direction using a funnel 501 to form a conical granule 504 on a horizontal plate 505. The granular thermosetting resin composition was charged until the cone maintained a constant shape, and the elevation angle (φ) was obtained using a protractor as shown in FIG. Next, as shown in FIG. 4B, a 109 g weight 503 on the same base 506 as the horizontal plate 505 is dropped three times from a height of 160 mm, and a part of the granular thermosetting is caused by impact. After the resin composition collapsed and dropped off, the elevation angle (θ) of the granule 507 was determined using a protractor as shown in FIG.

(With mold attached)
Using a compression molding machine (manufactured by TOWA Co., Ltd.), while reducing the inside of the cavity, the mold temperature was 175 ° C., the clamping pressure was 9.6 MPa, the injection (compression) time was 20 seconds, the curing time was 120 seconds, and MapBGA (circuit or A BT resin substrate without via wiring, PKG outer dimensions: 234 mm × 71 mm × 0.2 mm, no chip mount) was molded using a release film. In the case where the molded product and the release film were not attached when the mold was opened after the molding, the symbol was “good”, and the others were “x”.
In addition, as shown in FIG. 3, one side of the obtained plate-shaped Map molded product had an area capable of securing a plurality of chip mounting regions.

(Fillability)
After the evaluation of sticking the mold, the surface of the package was visually observed when the package was taken out of the mold. When the surface of the package had irregularities that seemed to be unfilled, it was judged as x, and when there was no surface molding abnormality, it was judged as ◯.

(Board productivity)
After the evaluation of the sticking of the mold, the warpage of the package was measured when the package was taken out from the mold.

  By using compression molding in accordance with the procedure shown in FIG. 2 using the granular thermosetting resin composition obtained in the example, a resin-encapsulated substrate having wirings connecting the layers was obtained. It turned out that the thermosetting resin composition of an Example has no metal mold | die sticking and is excellent in the manufacturing stability of a resin sealing board | substrate.

  As described above, the present invention has been described more specifically based on the embodiments. However, these are exemplifications of the present invention, and various configurations other than the above can be adopted.

100 Electronic device 110 Resin sealing substrate 112 Insulating layer 114 Upper surface 120 Via wiring 130 Metal layer 140 Semiconductor element 150 Wire bonding 160 Adhesive layer 170 Sealing material layer 200 Electronic device 210 Support base material 212 Carrier foil 220 Metal layer 222 Via wiring 224 Insulating layer 226 Upper surface 230 Metal layer 234 Insulating layer 236 Upper surface 240 Metal layer 246 Upper surface 250 Resin sealing substrate 260 Semiconductor element 270 Sealing material layer 280 Solder bump 300 Resin sealing substrate 310, 320 Semiconductor element mounting area 501 Funnel 502 Granular Thermosetting resin composition 503 Weight 504 Granule 505 Horizontal plate 506 Base 507 Granule 601 Rotor 602 Cylindrical outer periphery 603 Magnetic material 604 Excitation coil 605 Double tube cylindrical body 606 AC power source generator 607 Cooling jacket 608 Outside Tank 609 Twin screw extruder 610 Motor

Claims (11)

A thermosetting resin composition used for forming a resin-encapsulated substrate,
The thermosetting resin composition whose surface energy of the hardening board which hardened the said thermosetting resin composition at 175 degreeC is 30 mN / m or less. The thermosetting resin composition according to claim 1,
A thermosetting resin composition having a gel time at 175 ° C. of 50 seconds or more. The thermosetting resin composition according to claim 1 or 2,
The thermosetting resin composition whose glass transition temperature (Tg) of the hardened | cured material of the said thermosetting resin composition is 145 degreeC or more. The thermosetting resin composition according to any one of claims 1 to 3,
A thermosetting resin composition that is in the form of granules or sheets. The thermosetting resin composition according to claim 4,
A thermosetting resin composition having a collapse angle of 35 ° or less in the granular thermosetting resin composition. The thermosetting resin composition according to claim 4 or 5,
The thermosetting resin composition whose average particle diameter in the said granular thermosetting resin composition is 1.0 mm or less. The thermosetting resin composition according to any one of claims 1 to 6,
A thermosetting resin composition comprising silicone oil. The thermosetting resin composition according to any one of claims 1 to 7,
Including inorganic fillers,
The thermosetting resin composition whose content of the said inorganic filler is 70 mass% or more with respect to the said thermosetting resin composition whole. The thermosetting resin composition according to claim 8,
The thermosetting resin composition whose average particle diameter of the said inorganic filler is 5 micrometers or less.   A resin-encapsulated substrate comprising a cured product of the thermosetting resin composition according to any one of claims 1 to 9. A resin-sealed substrate according to claim 10;
And an electronic component mounted on the resin-encapsulated substrate.

Images