JP2017175155A - Electrical device, mechanical device, computer device, and/or other device formed of extremely low resistance material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide electrical devices, mechanical devices, computer devices, and/or other devices, which are formed of extremely low resistance materials.SOLUTION: A Josephson junction includes a first ELR conductor including a modified ELR material, a second ELR conductor including the modified ELR material, and a barrier material disposed between the first ELR conductor and the second ELR conductor. The modified ELR material includes a first layer of an ELR material and a second layer of a modifying material bonded to the ELR material of the first layer. The modified ELR material has improved operating characteristics over those of the ELR material alone.SELECTED DRAWING: Figure 1

Description

Cross-reference to related applications This application is related to US Provisional Patent Application No. 61 / 469,283, entitled “Very Low Resistance Nanowires”.
61 / 469,567, 61 / 469,571, 61 / 469,573, 61 / 469,576, US Provisional Patent Applications 61 / 469,293, 61/469, entitled “Inductors Made of Very Low Resistance Material” 469,580,
61 / 469,584, 61 / 469,585, 61 / 469,586, 61 / 469,589, 61 / 469,590,
61 / 469,592, US Provisional Patent Applications 61 / 469,313, 61 / 469,591, 61 / 469,595, 61 / 469,600, 61, entitled “Capacitors Formed with Very Low Resistance Material” / 469,602,
61 / 469,605, 61 / 469,609, 61 / 469,613, 61 / 469,618, 61 / 469,652,
US Provisional Patent Applications Nos. 61 / 469,313, 61 / 469,622, 61 / 469,627, 61 / 469,630, 61 / 469,632, 61, entitled “Transistors Made of Very Low Resistance Materials” No./469,635, 61 / 469,640, 61 / 469,645, U.S. Provisional Patent Applications 61 / 469,318, 61 / 469,599, 61 / 469,604, entitled “Rotating Machines Made of Very Low Resistance Material” No. 61 / 469,608, No. 61
No./469,612, 61 / 469,617, 61 / 469,619, 61 / 469,624, 61 / 469,628, US Provisional Patent Application No. 61 / entitled “Bearing Assembly Formed from Very Low Resistance Material” 469,
No. 324, 61 / 469,637, 61 / 469,641, 61 / 469,644, U.S. Provisional Patent Applications 61 / 469,331, 61 / 469,650 entitled "Transformers Formed with Very Low Resistance Material" No. 61, US Provisional Patent Applications Nos. 61 / 469,335 and 61 / 469,65 entitled “Power Transmission Parts Formed of Very Low Resistance Material”
No. 6, 61 / 469,658, 61 / 469,659, 61 / 469,662, US provisional patent application entitled “Fault Current Limiter Formed with Very Low Resistance Material”, 61 / 469,342, 61 / 469,667, 61 / 469,684, 61 / 469,769, "MRI parts and equipment using very low resistance materials
US Provisional Patent Applications 61 / 469,358, 61 / 469,603, 61 / 469,606, 61/469
610, 61 / 469,615, 61 / 469,621, 61 / 469,625, 61 / 469,633, 61/469
, 639, 61 / 469,642, 61 / 469,653, 61 / 469,657, 61 / 469,665, 61/469
No. 668, US Provisional Patent Application No. 61 / 469,361 entitled "Very Low Resistance Josephson Junction",
61 / 469,623, 61 / 469,634, 61 / 469,643, 61 / 469,648, U.S. Provisional Patent Applications 61 / 469,363 and 61 / 469,655 entitled "Very Low Resistance Quantum Interference Devices" No. 61/46
9,660, 61 / 469,666, 61 / 469,671, 61 / 469,675, 61 / 469,678, 61/46
No. 9,685, 61 / 469,691, U.S. provisional patent applications 61 / 469,367, 61 / 469,697, 61 / 469,700, 61 / 469,703 entitled "Antennas made of very low resistance material" , 61/469
, 704, 61 / 469,710, U.S. Provisional Patent Applications 61 / 469,371, 61 / 469,717, 61 / 469,721, 61 / 469,727, entitled “Filters Made of Very Low Resistance Materials” No. 61 / 469,7
No. 31, 61 / 469,735, 61 / 469,740, 61 / 469,756, US Provisional Patent Applications 61 / 469,398, 61 / 469,654 entitled “Sensors Made of Very Low Resistance Materials” , 61 / 469,67
3, 61 / 469,683, 61 / 469,687, 61 / 469,692, 61 / 469,711, 61 / 469,71
6, 61 / 469,723, 61 / 469,638, 61 / 469,646, 61 / 469,728, 61 / 469,73
7, 61 / 469,743, 61 / 469,745, 61 / 469,751, 61 / 469,754, 61 / 469,76
1, 61 / 469,766, 61 / 469,770, 61 / 469,772, 61 / 469,774, 61 / 469,775
No. 61/469, US Provisional Patent Application No. 61/469 entitled “Actuators Made of Very Low Resistance Materials”
, 401, 61 / 469,672, 61 / 469,674, 61 / 469,676, 61 / 469,681, US Provisional Patent Application No. 61 / 469,401 entitled "Actuators Made of Very Low Resistance Material" No. 6
1 / 469,672, 61 / 469,674, 61 / 469,676, 61 / 469,681, US Provisional Patent Applications entitled "Very Low Resistance Interconnect (ELRI) for Package System (SIP) Applications" 61 / 469,392, 61 / 469,707, 61 / 469,709, 61 / 469,712, US provisional patent application entitled "Very Low Resistance Interconnect (ELRI) for Connecting MEMS to Semiconductor IC Circuits" 61 / 469,424, 61 / 469,714, 61 / 469,718, 61 / 469,720, 61 / 469,724, 61 / 469,726, 61 / 469,730, "For RF circuits in semiconductor integrated circuits US Provisional Patent Applications Nos. 61 / 469,732, 61 / 469,736, 61 / 469,739 entitled "Very Low Resistance Interconnect (ELRI)" and "Integrated Circuit Devices Formed with Very Low Resistance Materials" U.S. provisional patent applications 61 / 469,554, 61 / 469,742, 61 / 469,744, 61 / 469,747, 61/469
No. 6,749, No. 61 / 469,750, U.S. Patent Application Nos. 61 / 469,560, 61 / 469,753, 61 / 469,755, 61/469, entitled “Energy Storage Devices Formed with Very Low Resistance Materials”. No.469,757, No.6
1 / 469,758, 61 / 469,759, 61 / 469,760, 61 / 469,762, 61 / 469,763 and U.S. Patent Application Nos. 13/076 entitled "Very Low Resistance Composition and Method for Producing the Same" , Claim priority to No. 18. Each of the applications described above is filed on March 30, 2011, each of which is incorporated herein by reference in its entirety.

This application was filed on January 6, 2012, the entirety of which is incorporated herein by reference.
Claims priority to US Provisional Patent Application No. 61 / 583,855 entitled "Layered Compositions such as Compositions Showing Very Low Resistance".

Electrical devices, mechanical devices, computer devices, and / or other devices that operate using conventional superconducting elements rely on expensive cooling systems to maintain the superconducting element in the superconducting state Suffers from various shortcomings. For example, conventional superconducting capacitors utilize various components of high temperature superconducting (HTS) materials that have the ability to transport current with minimal or zero resistance. However, HTS materials require very low operating temperatures (eg, temperatures below 120K) and typically use expensive systems such as liquid nitrogen based cooling systems to bring components to such operating temperatures. Realized by cooling. Such cooling systems increase the cost of implementation and prevent widespread commercial and consumer use and / or application to capacitors using these materials. These and other problems exist with current HTS-based devices.

It is a figure which shows the crystal structure of the example ELR material seen from the 1st viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 5 shows an exemplary ELR material single unit cell. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 4 is a diagram showing a crystal structure of an exemplary ELR material viewed from a second viewpoint. FIG. 6 is a diagram showing a modified crystal structure of an ELR material according to various examples of the present invention viewed from a second viewpoint. FIG. 3 is a diagram showing a modified crystal structure of an ELR material according to various embodiments of the present invention viewed from a first viewpoint. FIG. 5 is a diagram showing a crystal structure of an exemplary ELR material viewed from a third viewpoint. FIG. 6 illustrates a reference frame useful for describing various embodiments of the present invention. , , , , , , FIG. 6 shows test results showing various operating characteristics of the modified ELR material. FIG. 6 shows the test results of a modified ELR material using chromium as the material to be modified and YBCO as the ELR material. FIG. 6 shows the test results of a modified ELR material using vanadium as the material to be modified and YBCO as the ELR material. FIG. 6 shows the test results of a modified ELR material using bismuth as the material to be modified and YBCO as the ELR material. FIG. 6 shows the test results of a modified ELR material charge using copper as the material to be modified and YBCO as the ELR material. FIG. 6 shows the test results of a modified ELR material using cobalt as the material to be modified and YBCO as the ELR material. FIG. 6 shows the test results of a modified ELR material using titanium as the material to be modified and YBCO as the ELR material. , FIG. 6 shows the test results of a modified ELR material using chromium as the modified material and YBCO as the ELR material. FIG. 4 shows a configuration of ELR materials useful for modifying charge and modified ELR materials according to various embodiments of the present invention. FIG. 4 illustrates multiple layers of an ELR material crystal structure with an exemplary surface modification according to various embodiments of the present invention. FIG. 4 shows c-films of ELR materials according to various embodiments of the present invention. FIG. 3 shows a c-film having a suitable surface of ELR material according to various embodiments of the present invention. FIG. 3 shows a c-film having a suitable surface of ELR material according to various embodiments of the present invention. FIG. 4 shows a modifying material laminated on a suitable surface of an ELR material according to various embodiments of the present invention. FIG. 4 shows a modified material laminated on a suitable surface of an ELR material according to various embodiments of the present invention. FIG. 3 shows a c-film having an etched surface, including a suitable surface of ELR material, according to various embodiments of the present invention. FIG. 6 shows a modified material laminated on an etched surface of a c-film having a suitable surface of ELR material according to various embodiments of the present invention. FIG. 6 shows an ab film including an optional substrate and having a suitable surface of ELR material according to various embodiments of the invention. FIG. 4 illustrates a modifying material laminated on a suitable surface of an ab film ELR material according to various embodiments of the present invention. FIG. 4 shows various exemplary arrangements of ELR materials, modifying materials, buffer or insulating layers, and / or substrate layers according to various embodiments of the present invention. FIG. 4 illustrates a process for forming a modified ELR material according to various embodiments of the present invention. FIG. 6 illustrates an example of additional processing that can be performed in accordance with various embodiments of the present invention. FIG. 4 illustrates a process for forming a modified ELR material according to various embodiments of the present invention. FIG. 2 is a block diagram of a composition comprising a very low resistance material and one modifying component in accordance with various embodiments of the present invention. FIG. 3 is a block diagram of a composition that includes a very low resistance material and two or more modifying components according to various embodiments of the invention. FIG. 4 is a block diagram of a composition comprising layers of different very low resistance materials according to various embodiments of the present invention. FIG. 2 is a block diagram of a composition comprising differently shaped layers of the same very low resistance material according to various embodiments of the present invention. 1 is a block diagram of a composition comprising multiple layers of very low resistance materials according to various embodiments of the invention. FIG. FIG. 2 is a block diagram of an exemplary composition that includes multiple layers of very low resistance materials according to various embodiments of the present invention. , , , , , , , , FIG. 6 includes test results showing various operating characteristics of the exemplary composition shown in FIG. 6-Z. , , , , , , , , , , FIG. 2 is a diagram of forming nanowires using ELR material. , , , , , , , , , It is a figure which forms a Josephson junction (JJS) using ELR material. , , , , , , , , , , , , FIGS. 47-A to 53-A are diagrams for forming a squid using ELR material. , , , , , , , It is a figure which forms a medical device using ELR material. , , , , , , , , , , It is a figure which forms a capacitor | condenser using ELR material. , , , , , , , , FIG. 6 illustrates forming an inductor using ELR material. , , , , , , , It is a figure which forms a transistor using ELR material. , , , , , , , , FIG. 2 is a diagram of forming an integrated circuit device using ELR material. , , , , , , , , FIG. 2 is a diagram of forming an integrated circuit and a MEMS device using ELR material. , , , , FIG. 2 is a diagram of forming an integrated circuit RF device using ELR material. , , , , , , , , FIG. 5 illustrates the use of ELR material to form integrated circuit routing components and devices. , , , , , FIG. 2 is a diagram of forming an integrated circuit SIP device using ELR material. , , , , , , , , , , , , It is a figure which forms a rotating apparatus using ELR material. , , , , , , , , It is a figure which forms a bearing using ELR material. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , FIG. 6 is a diagram of forming a sensor using ELR material. , , , , , , , , , , , , , , , , , It is a figure which forms an actuator using ELR material. , , , , , , , , , , , , , , , , , , , , , , , , , , FIG. 6 is a diagram of forming a filter using ELR material. , , , , , , , , , , , , , , , , , , , , , It is a figure which forms an antenna using ELR material. , , , , , , , FIG. 2 is a diagram of forming an energy storage device using ELR material. , , , , , , , , , , , , , , , , FIG. 6 is a diagram of forming a current limiting device using ELR material. , , , , , , , , , , , , , , , FIG. 6 is a diagram of forming a transformer using ELR material. , , , , , FIG. 4 is a diagram of forming a transport line using ELR material.

Electrical devices, mechanical devices, including one or more components that have been modified, opened, laminated, and / or otherwise formed of new very low resistance (ELR) materials, Computer devices and / or other devices, components, systems, and / or apparatus are described. ELR materials provide a very low resistance to current at temperatures higher than those normally associated with current high temperature superconductors (HTS), and improve, among other things, the operating characteristics of devices at high temperatures.

In some examples, the ELR material is manufactured based on the type of material, the application of the ELR material, the size of the component using the ELR material, and the operating requirements of the device or apparatus using the ELR material. Thus, during device design and manufacture, the material used as the base layer of ELR material and / or the material used as one or more modifying layers of ELR material has various considerations, Selection can be based on desired operating characteristics and / or desired manufacturing characteristics.

Described herein are various devices, applications, and / or systems that may use ELR components. These devices, applications, and / or systems will be described in more detail in chapters 1-18 of this application.

The technology will be described in connection with various embodiments and / or examples. The following description provides specific details for a thorough understanding of embodiments of the system and for a possible description of embodiments of the system. However, one of ordinary skill in the art will appreciate that the present system can be implemented without these detailed descriptions. In other instances, well-known structures and functions have not been described in detail in order to avoid unnecessarily obscuring the description of the embodiments of the system.

The terminology used in the description below is intended to be interpreted in its broadest reasonable manner, even though it is used in the detailed description of a particular embodiment of the system. . Certain terms may be highlighted below. However, terms intended to be construed in a limited manner are clearly and specifically defined in the Detailed Description section.

Various features, advantages, and embodiments of the invention are described in the following detailed description, drawings, and claims, and are apparent from a review of the following detailed description, drawings, and claims. It will be. It should be understood that the detailed description and drawings are exemplary and are intended to provide further explanation without limiting the scope of the invention described in the claims.

For purposes of this description, a very low resistance ("ELR") material is a superconducting material that includes HTS materials, fully conductive materials (eg, full conductors), and other conductive materials that have very low resistance. However, it is not limited to this. As described herein, these
ELR materials should be used to form modified ELR materials, apertured ELR materials and / or new ELR materials, ELR films and / or other ELR component materials (eg, nanowires, wires, tapes, etc.) Is described as being possible. These ELR materials exhibit very low resistance to electrons and / or very high conductance of electrons at high temperatures, such as temperatures above 150K, at ambient or standard pressure. This chapter describes, among other things, the structure and operating characteristics of this ELR material.

Generally speaking, various embodiments of the present invention may include ELR materials having improved operating characteristics, or some or all of the improved operating characteristics described herein (eg, modified ELRs).
Materials, new ELR materials, etc.). Various embodiments of the present invention include ELR membranes, EL
Such ELR materials can be included in the form of R tapes, ELR nanowires, ELR wires, other configurations of ELR materials.

For purposes of this description, the operating characteristics of ELR materials and / or various embodiments of the present invention are
The resistance of the ELR material in the state (eg with respect to the superconductor, superconducting state), the transition temperature of the ELR material relative to the ELR state, the capacity to propagate the charge of the ELR material in the ELR state, one or more magnets of the ELR material It may include, but is not limited to, characteristics, one or more mechanical properties of the ELR material, and / or the material of the ELR material, other operating characteristics. In addition, for purposes of this description, improved operating characteristics include operation in ELR states at high temperatures (eg, including superconducting states), operation with increased charge propagation capacity at that same temperature (or higher temperature). Can be included.

For the purposes of this description, “very low resistance” is a resistance similar to the magnitude of the flux flow resistance in the superconducting state of superconducting material type II, and is generally substantially from 0Ω-cm to 293K. It can be expressed as a resistivity in the range of 1/50 (1/50) that of pure copper. For example, substantially pure copper as used herein is 99.999% copper. In various embodiments of the present invention, the portion of ELR material has a resistivity in the range of 0 Ω · cm to 3.36 × 10 ⁻⁸ Ω-cm.

As generally understood, the transition temperature is the temperature at which the ELR material "operates" with very low resistance or exhibits (or begins to exhibit) very low resistance, and / or others associated with the ELR material. It is the temperature that shows the phenomenon. When operating at very low temperatures, this ELR material is said to be in the ELR state. At temperatures above the transition temperature, ELR materials no longer exhibit very low resistance and E
LR material is said to be in a non-ELR state or a normal state. In other words, the transition temperature is the temperature at which the ELR material changes between a non-ELR state and an ELR state. As you can see, some EL
The transition temperature for the R material can be a temperature range in which the ELR material changes between a non-ELR state and an ELR state. It will also be appreciated that the ELR material has a transition temperature hysteresis and has a transition temperature when the ELR material is warm and a transition temperature when the ELR material is cold.

FIG. 13 shows a reference frame 1300 that can be used to describe various embodiments of the invention. The reference frame 1300 includes a set of axes called a-axis, b-axis, and c-axis. For the purposes of this description, reference to the a axis includes the a axis and other axes parallel to the a axis, reference to the b axis includes b axis, other axes parallel to the b axis, and c axis. Reference to includes the c-axis and other axes parallel to the c-axis. Reference frame 1300
The various pairs of axes that form the middle plane set are called a-plane, b-plane, and c-plane. Where a-plane is b
Formed by axis and c axis, perpendicular to a axis, b surface is formed by a axis and c axis, perpendicular to b axis, c surface is formed by a axis and b axis and perpendicular to c axis It is. For the purposes of this description, a reference to the a-plane includes the a-plane and a plane parallel to the a-plane, a reference to the b-plane includes a b-plane and a plane parallel to the b-plane, and a reference to the c-plane is , C-plane and plane parallel to c-plane. Furthermore, regarding the various “planes” or “surfaces” of the crystal structures described herein, the plane parallel to the a plane is called the “bc” plane, and the plane parallel to the b plane is called the “ac plane”. The plane parallel to the c-plane is called the “ab-plane”.

FIG. 1 shows an exemplary ELR material 100 viewed from a first perspective, a perspective that is perpendicular to the “ab-plane” of the crystal structure 100 and parallel to the c-axis. FIG. 2 shows the crystal structure 100 as viewed from a second viewpoint, that is, from a viewpoint perpendicular to the “bc” plane of the crystal structure 100 and parallel to the a-axis. For this explanation, FIG.
The exemplary ELR materials shown in FIG. 2 and are typically representative of various ELR materials. In some embodiments of the present invention, exemplary materials may be representative of a family of superconducting materials called mixed valence copper oxide perovskites. Mixed valence copper oxide perovskite material is LaBaCu
Ox, LSCO (such as La2-xSrxCuO4), YBCO (such as YBa2Cu3O7), BSCCO (such as Bi2Sr2Ca2Cu3O10), TBCCO (such as TI2Ba2Ca2Cu3O10 or TlmBa2Can-1CunO2n)
+ m + 2 + δ), HgBa2Ca2Cu3Ox, and other mixed valence copper oxide perovskite materials, but are not limited to these. Other mixed valence copper oxide perovskite materials include, but are not limited to, various substitutions of cations as understood. As will also be appreciated, the mixed valence copper oxide perovskite material described above can refer to a general class of materials in which many different chemical formulas exist. In some embodiments of the present invention, exemplary ELR materials may include HTS materials outside the family of mixed valence copper oxide perovskite materials (“non-perovskite materials”). Such non-perovskite materials include, but are not limited to, iron pnictides, magnesium diboride (MgB2), and other non-perovskites. In some embodiments of the present invention, the exemplary ELR material may be other superconducting materials.

Many ELR materials have structures similar to, but not necessarily identical to, the structure of the crystalline structure 100 having different atoms, combinations of atoms, and / or lattice arrangements, as will be appreciated. As shown in FIG. 2, the crystal structure 100 comprises two complete unit cells of the illustrated ELR material with one unit cell above the reference line 110 and one unit cell below the reference line 110. It is described. FIG. 4 shows one unit cell 400 of an exemplary ELR material.

As generally understood, an exemplary ELR material unit cell 400 includes two "abs" parallel to the c-plane.
It includes six "planes" including "plane", two "ac planes" parallel to the b plane, and two "bc planes" (see, eg, Fig. 13) parallel to the a plane. In a macroscopic sense, a “surface” of ELR material may be composed of a plurality (eg, hundreds, thousands or more) of unit cells 400. In this description, a particular plane (eg, a-plane, A reference to a “surface” or “plane” of ELR material parallel to the b-plane or c-plane is formed in the plane of the unit cell 400 whose surface is substantially parallel to a particular plane (ie, In this description, a-plane, b-plane, or c-plane (
For example, a reference to a “surface” or “surface” of an ELR material parallel to a surface other than the ab surface (as described below) refers to a macroscopic aggregation of surfaces formed from some mixture of unit cell 400 surfaces. In this sense, it is shown to form a surface substantially parallel to such other planes.

Studies have shown that some ELR materials exhibit anisotropy (ie, directionality) of the resistance phenomenon. In other words, the resistance at a given temperature and current density depends on the orientation relative to the crystal structure 100. For example, in the ELR state, some ELR materials deliver more current with very low resistance in the a-axis direction and / or in the b-axis direction than materials that carry current in the c-axis direction. Can carry. As will be appreciated, the various ELR materials are those described above,
Or anisotropy in various performance phenomena, including resistance phenomena in directions other than combinations of those described above. For purposes of this description, reference to a material that exhibits a resistance phenomenon in a first direction (and similar terms) indicates that such material supports a resistance phenomenon in the first direction. And a reference to a material that does not exhibit a resistance phenomenon in the second direction (and similar terms) refers to the fact that such a material does not support a resistance phenomenon in the second direction or more than the other direction. It shows a low resistance phenomenon.

Referring to FIG. 2, in the conventional understanding of known ELR materials, the opening 210 formed in the crystal structure 100 by a plurality of opening atoms 250 could not be recognized as responsible for the resistance phenomenon. (See, eg, FIG. 4 where the aperture is not readily apparent in the depiction of a single unit cell 400.) In a sense, the aperture atom 250 is a discrete atomic “boundary” around the aperture 210 or "
In some embodiments of the present invention, as shown in some embodiments of the present invention and in FIG. Although appearing during the second portion 100, in some embodiments of the present invention, the opening 210 may appear in other portions of a variety of other crystal structures. The opening is related to the electron density (not shown) associated with the various atoms in the crystal structure 100 including the opening 250 and its shape. Is understood.

According to various aspects of the invention, the aperture 210 facilitates charge propagation through the crystal structure 100, and the ELR material operates in an ELR state when the aperture 210 facilitates charge propagation through the crystal structure 100. . For the purposes of this description, "propagating" and / or "promoting" (along with their respective forms)
“In general,“ conduct ”and / or“ enhance conduction ”and their respective forms, and“ transport ”and / or“ enhance transport ”, and their respective forms, and “Guide” and / or “Promote Guide” and its respective forms and / or “Transport”, “
"Easy to carry" refers to each form. For purposes of this description, a charge may include a positive or negative charge, and / or a pair or other combination of such charges, and such charge may be of one or more particles. Propagates through the crystal structure 100 in the form or in the form of one or more waves or wave packets.

In some embodiments of the present invention, charge propagation through the crystal structure 100 may be in a manner similar to a waveguide. In some embodiments of the present invention, the opening 210 may be a waveguide that propagates charge through the crystal structure 100. Waveguides and their operation are generally well understood. In particular, the wall surrounding the interior of the waveguide can correspond to the boundary or perimeter of the opening atom 250 around the opening 210. One aspect related to the waveguide and its operation is its cross section.
At the atomic level, the opening 210 and / or its cross-section can be substantially altered by changes in temperature of the ELR material. For example, in some embodiments of the present invention, the temperature change of the ELR material may be caused by the opening 2
Can cause 10 changes. That change may then cause the ELR material to transition from the ELR state to the non-ELR state. For example, as the temperature of the ELR material increases, the opening 210 limits or prevents charge propagation through the crystal structure 100, and the corresponding ELR material may transition from an ELR state to a non-ELR state. Similarly, for example, when the temperature of the ELR material decreases, the opening 210 becomes
Facilitating charge propagation through the crystal structure 100 (as opposed to limiting or hindering), the corresponding ELR material may transition from a non-ELR state to an ELR state.

An opening, such as opening 210 in FIG. 2, is present in ELR materials such as, but not limited to, FIGS. 3 and 5-9 and the ELR materials described below. As illustrated, such openings are inherent in the crystal structure of some or all ELR materials. As will be understood from the perspective of this description, apertures 210 having various forms, shapes, sizes, and numbers can be used to accurately configure the crystal structure, the composition of the atoms, and the arrangement of atoms within the crystal structure of the ELR material. Correspondingly present in ELR material.

The presence or absence of openings 210 extending in various axial directions through the crystal structure 100 of various ELR materials is consistent with the anisotropy exhibited by such ELR materials. For example, the ELR material 360 shown in FIG. 3, FIG. 11, and FIG. 12 is YBCO-123 that exhibits a resistance phenomenon in the a-axis and b-axis directions but does not show a resistance phenomenon in the c-axis direction. Consistent with the anisotropy of the resistance phenomenon shown by YBCO-123, FIG. 3 shows that the opening 310 extends through the crystal structure 300 in the a-axis direction. FIG. 12 shows that openings 310 and 1210 extend through the crystal structure 300 in the direction of the b-axis, and FIG. 11 shows that appropriate openings extend through the crystal structure 300 in the direction of the c-axis. It shows no.

The opening 210 and / or its cross-section may depend on various atomic properties of the opening atoms 250 and / or “non-opening atoms” (ie, atoms 100 in a crystal structure other than the opening atoms 250). Such atomic properties include atomic size, atomic weight, number of electrons, electronic structure, number of bonds, types of bonds, different bonds, multiple bonds, bond lengths, bond strengths, bond angles between open atoms, It includes, but is not limited to, bond angles between open and non-open atoms and / or isotope numbers. Aperture atoms 250 and non-aperture atoms are used to optimize aperture 210 according to crystal structure and / or size, shape, stiffness, and vibration modes (in terms of amplitude, frequency, and direction) associated with atoms in the crystal structure , Can be selected based on the characteristics of the corresponding atom.

According to various embodiments of the present invention, changes in the physical structure of the aperture 210, including changes in shape and / or cross-sectional size, and / or changes in the shape and size of the aperture atom 205 may affect the resistance phenomenon. Might do. For example, as the temperature of the crystal structure 100 increases, the cross section of the opening 210 is caused by vibrations of various atoms in the crystal structure 100, as well as changes in the energy states of the atoms in the crystal structure 100, or their occupancy. May be changed. Physical deflection, tension and compression of the crystal structure 100 can also affect the crystal structure 100 and the location of various atoms within the cross section of the opening 210. The magnetic field exposed to the crystal structure 100 also causes the crystal structure 100 and the opening 210 to
May affect the position of various atoms in the cross section.

Phonons correspond to various modes of vibration within the crystal structure 100. Phonons in the crystal structure 100 interact with charges propagating through the crystal structure 100. More specifically, phonons in the crystal structure 100 interact with atoms in the crystal structure 100 (eg, opening atoms 250, non-opening atoms, etc.) and charges propagating through the crystal structure 100. High temperatures can result in high phonon amplitudes, which can increase the interaction between phonons and atoms and charges in the crystal structure 100. In various embodiments of the invention, the interaction between phonons, atoms 100 in the crystal structure, and charges in the crystal structure 100 can be reduced or altered.

FIG. 3 shows a crystal structure 300 of an exemplary ELR material 360 viewed from a second perspective. Exemplary ELR material 360
Is a superconducting material commonly referred to as "YBCO" and has a transition temperature of about 90K in a specific chemical formula. In particular, the exemplary ELR material 360 shown in FIG. 3 is YBCO-123. Exemplary ELR material 36
The zero crystal structure 300 includes various yttrium atoms ("Y"), barium ("Ba"), copper ("Cu") and oxygen ("O"). As shown in FIG. 3, the opening 310 is formed in the crystal structure 300 by opening atoms 350, ie, yttrium, copper, and oxygen atoms. The cross-sectional distance between yttrium open atoms in the opening 310 is about 0.389 nm, and the cross-sectional distance between oxygen open atoms in the opening 310 is about
The cross-sectional distance between copper opening atoms in the opening 310 is about 0.339 nm.

FIG. 12 shows a crystal structure 300 of an exemplary ELR material 360 viewed from a third perspective. Similar to that described above with respect to FIG. 3, an exemplary ELR material 360 is YBCO-123, and the opening 310 is formed in the crystal structure 300 by opening atoms 350, ie, yttrium, copper, and oxygen atoms. In this arrangement, the cross-sectional distance between yttrium opening atoms in opening 310 is about 0.382 nm, and opening 310
The cross-sectional distance between oxygen open atoms in the opening is about 0.288 nm, and the cross-sectional distance between copper open atoms in the opening 310 is about 0.339 nm. In this arrangement, the crystalline structure 300 of the exemplary ELR material 360 includes an opening 1210 in addition to the opening 310. The opening 1210 is generated in the b-axis direction of the crystal structure 300. More specifically,
Openings 1210 occur between each unit cell of the exemplary ELR material 360 in the crystal structure 300. The opening 1210 is formed in the crystal structure 300 by opening atoms 1250, ie, barium, copper and oxygen atoms. The cross-sectional distance between barium opening atoms 1250 in the opening 1210 is about 0.430 nm, and the opening 1210
The cross-sectional distance between oxygen open atoms 1250 in the inside is about 0.382 nm, and the cross-sectional distance between copper open atoms 1250 in the opening 1210 is about 0.382 nm. In some embodiments of the invention, aperture 1210 operates in the same manner as described herein for aperture 310. For this explanation, each open atom
Based on the composition of 350, 1250, the opening 310 in YBCO is called "yttrium opening", YBCO
The opening 1210 is sometimes referred to as a “barium opening”.

FIG. 5 shows a crystal structure 500 of an exemplary ELR material 560 viewed from a second perspective. Exemplary ELR material 560
Is generally referred to as "HgBa2Cu04" and is an HTS material having a transition temperature of about 94K. Example ELR
The crystal structure 500 of the material 560 includes various mercury (“Hg”), barium (“Ba”), copper (“Cu”), and oxygen (“O”) atoms. As shown in FIG. 5, the opening 510 is formed in the crystal structure 500 by opening atoms including atoms of barium, copper, and oxygen.

FIG. 6 shows a crystal structure 600 of an exemplary ELR material 660 viewed from a second perspective. Exemplary ELR material 660
Is generally referred to as “TI2Ca2Ba2Cu3O10” and is an HTS material having a transition temperature of about 128K. The crystalline structure 600 of the exemplary ELR material 660 includes various thallium ("Tl"), calcium ("Ca"), barium ("Ba"), copper ("Cu), and oxygen (" O ") atoms. As shown in FIG.
Formed within the crystal structure 600 by open atoms including calcium, barium, copper and oxygen atoms. Also, as shown in FIG. 6, the second opening 620 may be formed in the crystal structure 600 by second opening atoms including calcium, copper and oxygen atoms. Second aperture 620 is aperture 610.
Can be operated in a similar manner.

FIG. 7 shows a crystal structure 700 of an exemplary ELR material 760 viewed from a second perspective. Exemplary ELR material 760
Is generally referred to as “La2Cu04” and is an HTS material having a transition temperature of about 39K. The crystal structure 700 of the exemplary ELR material 760 includes various lanthanum (“La”), copper (“Cu”), and oxygen (“O”) atoms. As shown in FIG. 7, the opening 710 is formed in the crystal structure 700 by opening atoms including lanthanum and oxygen atoms.

FIG. 8 shows a crystal structure 800 of an exemplary ELR material 860 viewed from a second perspective. Exemplary ELR material 860
Is generally referred to as “As2Ba0.34Fe2K0.66” and is an HTS material having a transition temperature of about 38K.
The exemplary ELR material 860 is representative of a family of ELR materials called “iron pnictides”. The crystal structure 800 of the exemplary ELR material 860 includes various arsenic ("As"), barium ("Ba"), and iron ("Fe").
, And potassium ("K") atoms. As shown in FIG. 8, the opening 810 is formed in the crystal structure 800 by opening atoms including potassium and arsenic atoms.

FIG. 9 shows a crystal structure 900 of an exemplary ELR material 960 viewed from a second perspective. Exemplary ELR material 960
Is an HTS material commonly referred to as “MgB2” and having a transition temperature of about 39K. Example ELR material 9
The crystalline structure 900 of 60 includes various magnesium (“Mg”) and boron (“B”) atoms. Figure
As shown in FIG. 9, the opening 910 is formed in the crystal structure 900 by opening atoms including magnesium and boron atoms.

Each of the above exemplary ELR materials shown in FIGS. 3, 5-9, and 12 show that there are various openings in such materials. Various other ELR materials have similar openings. Once the resistance phenomenon occurs, the opening and the corresponding crystal structure are
It can be used to derive improved ELR materials from materials and / or to design and manufacture new ELR materials to improve the operating characteristics of existing ELR materials. For convenience of explanation, ELR material 360 (and its accompanying properties and structures) is generally EL
Refers to various ELR materials including, but not limited to, R material 560, ELR material 660, ELR material 760, and other ELR materials illustrated that are not the ELR materials described with reference to FIG. is not.

According to various embodiments of the present invention, the crystal structure of various known ELR materials is modified to operate with improved operating characteristics relative to known and / or unchanged ELR materials. can do. As will be appreciated, in some embodiments of the present invention, improved operational characteristics may be achieved, for example, by placing a material atom between the first portion 220 and the second portion 230 on the crystal structure 100. This can be accomplished by stacking materials to bridge the opening 210 by forming one or more bonds. Variations of depositing material on the crystalline structure 100 are described in further detail below in connection with test results from various experiments.

FIG. 10 is a diagram illustrating a modified crystal structure 1010 of a modified ELR material 1060 of various embodiments of the present invention when viewed from a second perspective. FIG. 11 shows a modified crystal structure 1010 of a modified ELR material 1060 of various embodiments of the present invention when viewed from a first perspective. The ELR material 360 (eg, shown in FIG. 3 etc.) is modified to form a modified ELR material 1060. The modifying material 1020 combines with the atoms (FIG. 3) of the crystal structure 300 of the ELR material 360 to form a modified crystal structure 1010 of the modified ELR material 1060, as shown in FIG. As shown, the modifying material 1020 bridges the gap between the first portion 320 and the second portion 330, thereby providing, among other things, the modified crystal structure 1010, particularly in the region of the opening 310. Change the vibration characteristics. In doing so, the changing material 1020 maintains the opening 310 at an elevated temperature. Thus, in some embodiments of the invention, the modifying material 1020 is selected to match and bond with the appropriate atoms in the crystal structure 300.

As shown in some embodiments of the present invention and in FIG. 10, the modifying material 1020 binds to the surface of the crystal structure 300 that is parallel to the b-plane (eg, the “ac” plane). Material 1020 to change
In the embodiment coupled with the “ac” plane, an opening 310 extending in the direction of the a axis and a cross section lying on the a plane are maintained. In such an embodiment, charge carriers flow through opening 310 in the direction of the a-axis.

In some embodiments of the present invention, the modifying material 1020 is an a-plane (eg, a “bc” plane)
To the surface of the crystal structure 300 that is parallel to the surface. In embodiments where the changing material 1020 is coupled to the “bc” plane, an opening 310 extending in the direction of the b axis and a cross section lying in the b plane are maintained. In such an embodiment, charge carriers flow through opening 310 in the direction of the b-axis.

Various embodiments of the present invention include laminating a specific surface of ELR material 360 with material 1020 to be modified (ie, modifying a specific surface of ELR material 360 with material 1020 to be modified).
. As will be understood from this description, a reference to “changing the surface” of ELR material 360 will ultimately result in one or more unit cell 400 faces (possibly one or more faces) of ELR material 360. Including changing. That is, the material 1020 to be modified actually binds to the atoms in the unit cell 400 of the ELR material 360.

For example, changing the surface of ELR material 360 parallel to the a plane includes changing the “bc” plane of unit cell 400. Similarly, changing the surface of the ELR material 360 parallel to the b-plane includes changing the “ac” plane of the unit cell 400. In some embodiments of the present invention, the modifying material 1020 is coupled to the surface of the ELR material 360 that is substantially parallel to a plane parallel to the c-axis. For purposes of this description, the plane parallel to the c-axis is commonly referred to as the ab plane and, as will be understood, a
Including side and b side. As can be seen, the surface 360 of the ELR material parallel to the ab plane is the unit cell 400
In an embodiment in which the material to be modified 1020 is bonded to a surface parallel to the ab plane, an opening 310 extending in the direction of the a axis and the b axis direction is formed. An opening 310 extending to is maintained.

In some embodiments of the present invention, the modifying material 102 may be a conductive material.
In some embodiments of the present invention, the modifying material 102 may be a high oxygen affinity material. (Ie, materials that readily bind to oxygen) ("oxygen binding materials"). In some embodiments of the present invention, the modifying material 1020 may be a conductive material that readily bonds to oxygen ("oxygen bonded conductive material"). Such oxygen bonded conductive materials include, but are not limited to, chromium, copper, bismuth, cobalt, vanadium, titanium. Such oxygen bonded conductive materials can also include, but are not limited to, rhodium or beryllium. Other modifying materials can include gallium or selenium. Other modifying materials may include silver. Still other changing materials can be used.

In some embodiments of the present invention, the oxide of modifying material 1020 may form during various operations when modifying ELR material 360 with modifying material 1020. Thus, in some embodiments of the present invention, the modifying material 1020 can include a substantially pure form of the modifying material 1020 and / or various oxides of the modifying material 1020. In other words, in some embodiments of the present invention, the ELR material 360 includes the modifying material 1020 and / or various oxides of the modifying material 1020. By way of example, in some embodiments of the present invention, the modifying material 1020 may include, but is not limited to, chromium and / or chromium oxide (CrxOy).

In some embodiments of the present invention, the ELR material 360 may be YBCO and the modifying material 1020 may be an oxygen bonded conductive material. In some embodiments of the invention, the ELR material 360 is YBCO and the modifying material 1020 is selected from the group comprising chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium, It is not limited to these. In an embodiment of the invention, the ELR material 360 is YBCO, and the modifying material 1020 is chromium, copper, bismuth,
It can be selected from the group consisting of cobalt, vanadium, titanium, rhodium, and beryllium. In some embodiments of the present invention, the ELR material 360 is YBCO and the modifying material 1020 may be other modifying materials.

In some embodiments of the present invention, various other combinations of mixed valence copper oxide perovskite materials and oxygen bonded conductive materials can be used. For example, in some embodiments of the present invention, ELR material 360 corresponds to a mixed valence copper oxide perovskite material commonly referred to as “BSCCO”. BSCCO is bismuth ("Bi"), strontium ("Sr"), calcium ("
Ca "), copper (" Cu ") and oxygen (" O ") various atoms.BSCCO by itself is about 100K
Having a transition temperature of In some embodiments of the present invention, the ELR material 360 may be BSCCO and the modifying material 1020 may be an oxygen bonded conductive material. In some embodiments of the invention, the ELR material 360 is BSCCO and the modifying material 1020 can be selected from the group comprising chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium. However, it is not limited to these. In some embodiments of the present invention, ELR material 360 is made of BS.
The material 1020 that is CCO and is modified may be selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some examples of the invention, the ELR material 360 is BSCCO and the modifying material 1020 may be other modifying materials.

In some embodiments of the present invention, various combinations of other ELR materials and changing materials may be used. For example, in some embodiments of the present invention, ELR material 360 is an iron pnictide material. Iron pnictide by itself has a transition temperature in the range of about 25-60K. In some embodiments of the present invention, the ELR material 360 is an iron pnictide and the modifying material 1020
May be an oxygen bonded conductive material. In some embodiments of the invention, the ELR material 360 is an iron pnictide and the modifying material 1020 may be selected from the group comprising chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium. However, it is not limited to these. In some embodiments of the invention, the ELR material 360 is an iron pnictide and the modifying material 1020 is chromium, copper, bismuth, cobalt, vanadium,
It can be selected from the group consisting of titanium, rhodium, and beryllium. In some embodiments of the present invention, the ELR material 360 is an iron pnictide and the modifying material 1020 may be other modifying materials.

In some embodiments of the present invention, various combinations of other ELR materials and changing materials may be used. For example, in some embodiments of the present invention, the ELR material 360 may be magnesium diboride ("MgB2"). Magnesium diboride itself has a transition temperature of about 39K. In some embodiments of the invention, the ELR material 360 may be magnesium diboride and the modifying material 1020 may be an oxygen bonded conductive material. In some embodiments of the present invention, the ELR material 360 is magnesium diboride and the modifying material 1020 is selected from the group comprising chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium. However, it is not limited to these. In some embodiments of the invention, the ELR material 360 is magnesium diboride and the modifying material 1020 is chromium,
It can be selected from the group consisting of copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some embodiments of the present invention, the ELR material 360 is magnesium diboride and the modifying material 1020 may be other modifying materials.

In some embodiments of the present invention, the modifying material 1020 is, as will be appreciated, applied to a sample of ELR material 360 using a variety of techniques for laminating one composition on another composition. Can be stacked. For example, such lamination techniques include pulsed laser deposition, co-evaporation, electron beam deposition and activated reactive deposition and other deposition methods, magnetron sputtering, ion beam sputtering, ion assisted sputtering and other sputtering methods, cathodic arc deposition. Methods, CVD methods, metalorganic CVD methods, plasma CVD methods, molecular beam epitaxy methods, sol-gel methods, liquid phase epitaxy methods and / or other lamination techniques, but are not limited thereto. In some embodiments of the present invention, ELR material 360 may be laminated over a sample of material 1020 to be modified using a variety of techniques for laminating one composition onto another composition. it can. In some embodiments of the invention, the modifying material 1020 has a single atomic layer (ie, the modifying material 1020 having a thickness substantially equal to a single atom or molecule of the modifying material 1020).
Of the ELR material 360 may be laminated on the ELR material 360 sample. In some embodiments of the present invention, a single unit layer of changing material (ie, a thickness substantially equal to a single unit of changing material (eg, an atom, molecule, crystal, or other unit) is provided. Having a layer of material to change))
It may be laminated on a sample of ELR material. In some embodiments of the invention, a single unit layer of the material to be modified may be laminated over the ELR material. In some embodiments of the invention, two or more single unit layers of the material to be modified may be laminated over the ELR material. In some embodiments of the present invention, the ELR material may be laminated on two or more single unit layers of the material to be modified.

In some embodiments of the present invention, the modified ELR material 360, including the modifying material 1020, has an opening 310 in the ELR material 1060 that changes at a temperature near or above the boiling point of nitrogen.
To maintain. In some embodiments of the present invention, the opening 310 is maintained at a temperature approximately equal to or higher than the boiling point of carbon dioxide. In some embodiments of the invention,
Opening 310 is maintained at a temperature near the boiling point of ammonia or at a temperature above the boiling point of ammonia. In some embodiments of the present invention, the opening 310 is maintained at a temperature approximately at or above the boiling point of freon. In some embodiments of the invention, the opening 310 is
It is maintained at a temperature near the boiling point of water or at a temperature above the boiling point of water. In some embodiments of the invention, the opening 310 is maintained at a melting temperature of the water and antifreeze solution or above a melting point of the water and antifreeze solution. In some embodiments of the invention, opening 310 is maintained at about room temperature (eg, 21 ° C.) or at a temperature above room temperature. In some embodiments of the invention, the aperture 310 is 150K, 160K, 170K, 180K, 190K, 200K, 210K, 220K, 230K, 240K, 250K, 260K.
, 270K, 280K, 290K, 300K, 310K maintained at a temperature selected from a set of temperatures or higher. In some embodiments of the present invention, opening 310 is maintained at a temperature in the range of 150K to 315K.

FIGS. 14A-14G show the test results 1400 obtained as described above. Test result 1
400 contains a plot of the resistance of ELR material 1060 as a function of temperature (K). More specifically, the test result 1400 is a modified ELR material 1060, the material 1020 to be modified is chromium, and the ELR material 360 is YBCO. FIG. 14A includes a test result 1400 where the resistance of the modified ELR material 1060 is the entire temperature range measured, ie, 84K-286K. To show in more detail, test results 1400 are shown divided into various temperature ranges. 14B shows the test result 1400 in the temperature range from 240K to 280K, FIG. 14C shows the test result 1400 in the temperature range from 21K to 250K, and FIG.14D shows the test result in the temperature range from 180K to 220K. 14E shows the test result 1400 in the temperature range from 150K to 190K, and FIG.14F shows the test result from 120K to 160K.
FIG. 14G shows the test result 1400 in the temperature range from 84.5K to 124.5K.

Test results 1400 show that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures compared to the ELR material 360. Six samples were analyzed. In each sample analysis test, the modified ELR material 1060 was slowly cooled from about 286K to 83K. In order to reduce the effects of DC offset and / or thermocouple effects while cooling, the current source passed + 60nA and -60nA in a delta mode configuration. At a certain time interval, the voltage of the changed ELR material 1060 was measured with a voltmeter. In each sample analysis test, the time series of voltage measurements was filtered using a 512-point fast Fourier transform ("FFT"). Of the filtered data, 44 frequencies with the lowest FFT were excluded from the data, and the rest of the data was returned to the time domain. The data filtered in each sample analysis test was then integrated to produce a test result 1400. More specifically, all resistance measurements in an analytical test of six samples are measured in a temperature range (e.g. 80K-80.25K, 80.25K-80.50K, 8
From 0.5K to 80.75K, etc.). The resistance measurements measured at each temperature range were then averaged to determine the average resistance measurement at each temperature range. The test result 1400 was obtained by measuring these average resistances.

Test result 1400 includes various discrete steps 1410 that are plots of resistance against temperature, each discrete step 1410 showing a rapid change in resistance over a relatively narrow temperature range.
At each discrete step 1410, the discrete portion of the modified ELR material 1060 begins to propagate charge to the charge propagation capacity of such portion at each temperature. ELR has changed on a very small scale
Since the surface of the material 360 is not completely smooth, the opening 310 exposed on the surface of the ELR material 360 typically does not extend across the entire width or length of the modified ELR material 1060 sample. Thus, in some embodiments of the invention, the modifying material 1020 covers the entire surface of the ELR material 360,
It can act as a conductor that carries charge between the apertures 310.

Before describing the details of the test result 1400, various characteristics of the ELR material 360 and the material 1020 to be modified will be described. The individual profiles of resistance versus temperature ("R-T") for these materials are generally well known. The individual RT profiles of these materials are not considered to include features similar to the discrete step 1410 found in the test results 1400. In fact, the unmodified sample of ELR material 360 and the modified material 1020 were the same and were often tested with the same test method and measurement equipment, respectively. In each example, the RT profile of the unmodified sample of ELR material 360 and the RT profile of the material to be modified alone did not include functions similar to discrete step 1410.
Thus, the discrete step 1410 is the result of the changing material 1020 and the changing ELR material 360, maintaining the opening 310 as the temperature rises, so that the changing material 1060 is a high temperature in various embodiments of the present invention. In this case, the ELR state can be maintained.

In each discrete step 1410, the various openings of openings 310 in the modified ELR material 1060 are replaced with each opening.
Charge propagation starts in the charge propagation capacity of 310. As a result of measurement with a voltmeter, each charge propagation aperture 310
Appears as a short circuit, with a slight drop in the apparent voltage across the sample of modified ELR material 1060. The apparent voltage is that when the additional aperture in aperture 310 begins to propagate charge, the sample temperature of the modified ELR material 1060 is the transition temperature of the ELR material 360 (ie, the transition when the unmodified ELR material is YBCO) The temperature continues to drop until it reaches about 90K).

Test result 1400 shows that the aperture 310 in the modified ELR material 1060 is approximately 97K, 100K, 103K, 113K, 1
It has been shown to propagate charge at 26K, 140K, 146K, 179K, 183.5K, 200.5K, 237.5K, and 250K. As will be appreciated, the openings 310 in the modified ELR material 1060 can propagate charge at other temperatures within the full temperature range.

Test result 1400 includes a relatively abrupt change in resistance over a relatively narrow temperature range that has not been identified as discrete step 1410. Some of these other changes have been tested (eg FF
T, filtering, etc.) may be an artifact from the data processing technique used for the measurements obtained during. Some of these other changes may cause the aperture 310 to vary at various temperatures.
There may be a change in resistance due to the resonant frequency in the modified crystal structure 1010 that affects the. Some of these other changes may be additional discrete steps 1410. Also, resistance changes in the temperature range of 270-274K may be associated with water present in the modified ELR material 1060, and some of this water may be present during sample preparation of the modified ELR material 1060. It may have been introduced.

The test result 1400 shows that in addition to the discrete step 1410, the ELR material 360 does not conduct normally, whereas the changing material 1020 conducts well at temperatures above the transition temperature of the ELR material 360.
It is different from the RT profile of material 360.

FIG. 15 shows additional test results 1500 for a sample of ELR material 360 and modified material 1020. More specifically, in test result 1500, the material 1020 to be changed is chromium and the ELR material 3
60 is YBCO. In test results 1500, a sample of ELR material 360 was prepared using the various techniques described above to expose the plane of the crystal structure 300 parallel to the a-plane or the b-plane. Test result 1
500 10nA at 24.0Hz using lock-in amplifier and K6221 current source on modified ELR material 1060
It was obtained by passing a current of. Test result 1500 shows the modified ELR material as a function of temperature (K)
Includes a plot of 1060 resistance. FIG. 15 includes test results 1500 in which the resistance of the modified ELR material 1060 was measured over the full temperature range, ie, 80K-275K. Test results 1500 show that various portions of the modified ELR material 1060 operate in the ELR state at a higher temperature than the ELR material 360. Five samples of analytical tests were performed on samples of modified ELR material 1060. In each sample analysis test, a sample of the modified ELR material 1060 was slowly heated from 80K to 275K. While heating, the voltage of the modified ELR material 1060 sample was measured at regular time intervals, and the resistance was calculated from the current source. In each sample analysis test, the time series of resistance measurements was filtered using a 1024 point FFT. However, the lowest 15 frequencies from all FFTs were removed from the data and the filtered resistance measurements were returned to the time domain. The resistance measurements filtered in each sample analysis test were integrated using the binning process described above to produce test results 1500. The resistance measurements at each temperature range were then averaged together to obtain an average resistance measurement at each temperature range. These average resistance measurements form test result 1500.

Test result 1500 includes various discrete steps 1510 in the resistance versus temperature plot. Each discrete step 1510 shows that the resistance changes relatively abruptly in a relatively narrow temperature range, similar to the discrete step 1410 described in FIGS. 14A-14G. In each discrete step 1510, a discrete portion of the modified ELR material 1060 propagates charge to the charge propagation capacity of the discrete portion at each temperature.

Test results 1500 show that the aperture 310 in the modified ELR material 1060 propagates charge at about 120K, 145K, 175K, 225K, and 250K. The openings 310 in the modified ELR material 1060 may propagate charge at other temperatures within the full temperature range, as will be appreciated.

FIGS. 16-20 show additional test results for samples of ELR material 360 and various modified materials 1020. FIG. In these additional test results, the sample of ELR material 360 exposes the surface of crystal structure 300 to be substantially parallel to the a-plane or b-plane, or some combination of a-plane or b-plane. And the various materials described above were prepared so that the material to be modified was laminated on these exposed surfaces. Each of these modified samples was slowly cooled from about 300K to 80K. As described below, while warming, the current source applied current to the modified sample in a delta mode setting. The voltage of the changed sample was measured at regular intervals. In the analytical test for each sample, the time series of voltage measurements was filtered using FFT to remove the lowest frequency in the frequency domain, and the filtered measurements were returned to the time domain. The number of frequencies retained is generally different for each data set. The filtered data from each test was then binned and averaged together to produce the test results shown in FIGS. 16-21.

FIG. 16 shows a test result 1600 that includes a plot of the resistance of the modified ELR material 1060 as a function of temperature (K). In test result 1600, the material 1020 to be changed is vanadium and the ELR material 360
Is YBCO. Test result 1600 was obtained in 11 tests using a 20 nA current source, performing a 1024 point FFT and using all information with the 12 lowest frequencies removed. Test result 1600 is
Various portions of the modified ELR material 1060 are shown to operate in the ELR state at higher temperatures than the ELR material 360. Test result 1600 is similar to that described with reference to FIGS.
Various discrete steps 1610 are included in the temperature plot. Test result 1600 shows modified ELR
It shows that apertures 310 in material 1060 propagate charge at approximately 267K, 257K, 243K, 232K, and 219K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

FIG. 17 shows a test result 1700 including a plot of resistance of the modified ELR material 1060 as a function of temperature (K). In test result 1700, the material 1020 to change is bismuth and the ELR material 360 is
YBCO. Test result 1700 was obtained in 5 tests using a 400 nA current source, performing 1024 point FFTs and using all information with the 12 lowest frequencies removed. Test result 1700 is
Various portions of the modified ELR material 1060 are shown to operate in the ELR state at higher temperatures than the ELR material 360. Test result 1700 includes various discrete steps 1710 in the resistance-temperature plot, similar to that described in FIGS. 14A-14G. Test result 1700 shows modified ELR material 1
It shows that the aperture 310 in 060 propagates charge at approximately 262K, 235K, 200K, 172K, and 141K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

FIG. 18 shows a test result 1800 including a plot of resistance of the modified ELR material 1060 as a function of temperature (K). In test result 1800, the material to be changed 1020 is copper and the ELR material 360 is YBCO. Test result 1800 was obtained in 5 tests using a 1024 point FFT with a 200 nA current source and using all the information with the 12 lowest frequencies removed. Test result 1800 shows that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures than the ELR material 360. Test result 1800 includes various discrete steps 1810 in the resistance-temperature plot, similar to that described in FIGS. 14A-14G. Test result 1800 shows modified ELR material 1060
The inner aperture 310 is shown to propagate charge at approximately 268K, 256K, 247K, 235K, and 223K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

FIG. 19 shows a test result 1900 including a plot of resistance of the modified ELR material 1060 as a function of temperature (K). In test result 1900, the material 1020 to change is cobalt and the ELR material 360 is
YBCO. Test result 1900 was obtained in 11 tests using a 420nA current source, performing a 1024 point FFT and using all information with the 12 lowest frequencies removed. Test results 1900 indicate that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures than the ELR material 360. Test result 1900 includes various discrete steps 1910 in the resistance-temperature plot, similar to that described in FIGS. 14A-14G. Test results 1900 show that the aperture 310 in the modified ELR material 1060 propagates charge at approximately 265K, 236K, 205K, 174K, and 143K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

FIG. 20 shows a test result 2000 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (K). In test result 2000, the material to be changed 1020 is titanium and the ELR material 360 is YB
CO. Test results 2000 were obtained in 11 tests using a 100 nA current source, performing 512 point FFTs and using all information with 11 lowest frequencies removed. Test results 2000 show that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures than the ELR material 360. Test result 2000 includes various discrete steps 2010 in the resistance-temperature plot, similar to that described in FIGS. 14A-14G. Test result 2000 shows modified ELR material 1
It shows that aperture 310 in 060 propagates charge at about 266K, 242K, and 217K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

21A-21B show a test result 2100 that includes a plot of the resistance of the modified ELR material 1060 as a function of temperature (K). In test result 2100, the material 1020 to be changed is chromium and the ELR material 3
60 is YBCO. FIG. 21A includes test results 2100 over the entire range of temperatures at which the resistance of the modified ELR material 1060 was measured, ie, 80K-270K. For further explanation, test result 2
100 was expanded in the temperature range of 150K to 250K as shown in FIG. 21B. Test result 2100 is shown in FIG.
It was obtained in the same manner as described in -20. Specifically, test result 2100 was obtained in 25 tests using a 300 nA current source. These test data were smoothed with Savitzy-Golay using 64 side points and a fourth order polynomial. Test result 2100 shows that various portions of the modified ELR material 1060 operate in an ELR state at a higher temperature than ELR material 360 (here, BSSCO). Test result 2100 includes various discrete steps 2110 in the resistance-temperature plot, similar to that described in FIGS. 14A-14G. Test result 2100 shows that the opening 310 in the modified ELR material 1060 propagates charge at approximately 184K and 214K. The opening 310 in the modified ELR material 1060 may propagate charge at other temperatures.

In other experiments, the modifying material 1020 was laminated on the surface of the ELR material 360 substantially parallel to the c-plane of the crystal structure 300. These test results (not shown) show that laminating with a material 1020 that modifies the surface of ELR material 360 parallel to the c-plane does not produce discrete steps as described above (eg, discrete step 1410) It is shown that. These test results show that ELR material 360
However, changing the surface of the ELR material 360 that is perpendicular to a direction that does not (or does not tend to) exhibit resistance does not improve the operating characteristics of the unmodified ELR material.
In other words, changing the surface, such as ELR material 360, may not maintain opening 310. In accordance with the various principles of the present invention, changing the material should be laminated on the surface of the ELR material parallel to the direction in which the ELR material does not (or tends not to exhibit) the resistance phenomenon. More specifically, for example, relative to ELR material 360 (shown in FIG. 3), the modifying material is ELR material on the “ac” or “bc” face of crystal structure 300 to maintain opening 310. Should be coupled to 360 (which tends to show no resistance in the c-axis direction).

FIG. 22 shows a configuration 2200 that includes alternating layers of layers of ELR material 360 and layers of modifying material 1020 useful for propagating additional charges in accordance with various embodiments of the invention. Such layers can be deposited on top of each other using various deposition techniques. Various technologies are ELR material 360
Could be used to improve the alignment of the crystal structure 300 in the layers of the. The improved alignment of the crystal structure 300 results in an increased length aperture 310 that passes through the crystal structure 300, which in turn is at a higher temperature and / or with an increased charge propagation capacity. May provide behavior. Composition 2200 consists of changing material 1020 and ELR material 3
Increase the number of openings 310 in the ELR material 1060 modified at each interface between 60 adjacent layers. Opening
The increased number of 310 can increase the charge propagation capacity of configuration 2200.

In some embodiments of the invention, any number of layers can be used. In some embodiments of the invention, other ELR materials and / or other modifying materials may be used. In some embodiments of the present invention, additional layers of other materials (eg, insulators, conductors, or other materials) can have various effects (eg, magnetic effects, material movement, or other effects). Can be used between a pair of ELR material 360 layers and a changing material 1020 layers to ease)
Alternatively, it can be used to improve the properties of the modified ELR material 1060 formed in the pair of layers. In some embodiments of the invention, not all layers are paired. In other words, configuration 2200 may have one or more layers of extra (ie, unpaired) ELR material 360, or one or more extra layers of material 1020 to be modified. You may have.

FIG. 23 illustrates a modified crystal structure 1 in a modified ELR material 1060 according to various embodiments of the invention.
010 additional layers 2310 (shown as layer 2310A, layer 2310B, layer 2310C and layer 2310D) are shown. As shown, the modified ELR material 1060 comprises various apertures 310 (opening 310A, opening 310B) at various distances from the modifying material 1020 to the material 1060 that form bonds with the atoms of the crystal structure 300 (FIG. 3). ,
Opening 310C). Opening 310A is closest to the material 1020 to be changed, then opening 31
0B follows, followed by the opening 310C and the like. According to various embodiments of the present invention, the changing material 1020
Since the opening 310A is close to the material 1020 to be changed, it is necessary to maintain the opening 310A better than either the opening 310B or the opening 310C. Similarly, the changing material 1020 needs to maintain the opening 310B better than the opening 310C because the opening 310B is close to the changing material 1020. According to some embodiments of the present invention, the changing material 1020 needs to maintain the cross section of the opening 310A better than either the opening 310B or the cross section of the opening 310C because the opening 310A is close to the changing material 1020. is there. Similarly, the changing material 1020 is similar to the changing material 1020 in the opening 310B, so the opening 31
It is necessary to maintain the cross section of the opening 310C better than the cross section of 0C. According to some embodiments of the present invention, the changing material 1020 is closer to the specific material of the opening 310A than the changing material 1020 than the opening 310B or the opening 310C at any particular temperature. Opening at temperature 31
Should have a big impact on the charge propagation capacity of 0A. Similarly, the changing material 1020 has an opening 31.
Since 0B is close to the changing material 1020, the aperture is more than the charge propagation capacity at a certain temperature of the aperture 310C
It should have a great influence on the cross section of charge propagation capacity at a specific temperature of 310C. According to some embodiments of the present invention, the changing material 1020 passes through the opening 310A rather than facilitating charge propagation through the opening 310B or opening 310C because the opening 310A is close to the changing material 1020. Charge propagation should be promoted. Similarly, the material 1020 that changes is the material 1020 that the opening 310B changes.
Therefore, the propagation of charge through the opening 310C should be promoted rather than the propagation of charge through the opening 310C.

The test results 1400 shown in FIG. 14 show, among other things, that the effects of the changing material 1020 on the aperture 310 change in close proximity to each other, supporting the various embodiments of the present invention. ing. Specifically, each discrete step 1410 in test result 1400 corresponds to a change in charge carried by the modified ELR material 1060. Because the opening 310 (in a particular layer 2310
More suitably, openings 310) formed between adjacent layers as shown are such openings 310).
This is because charges are propagated to the charge propagation capacity. The opening 310 in the layer 2310 closer to the changing material 1020 corresponds to a higher temperature discrete step 1410, whereas the opening 310 in the layer 2310 farther from the changing material 1020 corresponds to the lower temperature discrete step 1410. Correspond. Discrete step 1
410 means that the opening 310 of a given relative distance in the material to be modified 1020 (ie, opening 310A between layer 2310A and layer 2310B) propagates charge at a certain temperature and immediately reaches the maximum charge propagation capacity Is "discrete". Another discrete step 1410 is an opening at a further distance from the material 1020 to be modified
This is achieved when 310 (ie, opening 310B between layer 2310B and layer 2310C) propagates charge at a lower temperature as a result of the greater distance and mitigates the effect of changing material 1020 on opening 310. The Each discrete step 1410 corresponds to another set of openings 310 that begin to carry charge based on the distance from the material 1020 to be changed. However, since the changing material 1020 cannot exert a sufficient effect on the aperture 310 at some distance to cause some apertures 310 to carry charge at high temperatures, such apertures 310 are therefore ELR. The charge propagates at a temperature that matches the temperature of the material 360.

In some embodiments of the present invention, the distance between the changing material 1020 and the opening 310 is reduced so that the effect of the changing material 1020 on many openings 310 is increased. In practice, many openings 310 should propagate charge in discrete steps 1410 associated with higher temperatures. For example, in the configuration of FIG. 22 according to various embodiments of the present invention, the layer of ELR material 360 is ELR.
A small number of unit cell thicknesses may be made to reduce the distance between the aperture 310 in the material 360 and the changing material 1020. To reduce this distance, the number of openings 310 affected by the material 1020 changing at a given temperature should be increased. Reducing this distance increases the number of alternating layers of ELR material 360 in a given overall thickness of configuration 2200, thereby increasing the overall charge propagation capacity of configuration 2200.

Although FIG. 24 shows a film 2410 of ELR material formed on a substrate 2420, the substrate 2420 may not be necessary in various embodiments of the invention. In various embodiments of the present invention, the membrane 2400 can be formed of a tape having, for example, a length of 10 cm, 1 m, 1 km or more. Such a tape may be useful, for example, as an ELR conductor or ELR line. As will be appreciated, although various embodiments of the present invention are described with reference to ELR films, such embodiments are equally applicable to ELR tapes.

For this explanation, as shown in FIG. 24, the membrane 2400 has a first surface 2430 and a main shaft 2440. The main axis 2440 is an axis extending along the length of the film 2400 (different from the width of the film 2400 and the thickness of the film 2400). The main axis 2440 is the main direction in which charges flow through the membrane 2400. As shown in FIG. 24, the first surface 2430 is the dominant surface of the membrane 2400 and is a surface combined by the length and width of the membrane 2400. It should be understood that the membrane 2400 has various lengths, widths, and / or thicknesses without departing from the scope of the present invention.

In some embodiments of the invention, during the manufacture of membrane 2400, the crystal structure of ELR material 2410 is:
The c-axis of the crystal structure is substantially perpendicular to the first surface 2430 of the film 2400 so that either the a-axis or the b-axis of each crystal structure is substantially parallel to the main axis 2440. Oriented. Thus, as shown in FIG. 24, the c-axis is referred to by name, and the a-axis and b-axis are not specifically labeled, but to illustrate various embodiments of the present invention, Reflects compatibility. In the manufacturing process of film 2400, the crystal structure of the ELR material can be oriented so that any given line in the c-plane is substantially parallel to the major axis 2440.

For purposes of this description, a film 2400 having a c-axis of each crystal structure that is oriented substantially perpendicular to the first surface 2430 (including the film 2400 shown in FIG. 24) is expressed as “c− Membrane "(ie C membrane
2400). C-membrane 2400 with ELR material 2410 made of YBCO is, for example, American Su
perconductorsTM (eg 344 superconductor type 348C) or Theva Diinnschichttechnik
(Eg HTS coated conductors).

In some embodiments of the present invention, the substrate 2420 may be MgO, STO, LSGO, metal or ceramic, polycrystalline materials such as inert oxide materials, cubic oxide materials, rare earth oxide materials, or other substrates. It will be understood that the substrate material can include, but is not limited to, material.

According to various embodiments of the present invention (and described in detail below), the modifying material 1020 is laminated onto a suitable surface of the ELR material 2410. Here, the appropriate surface of ELR material 2410 is ELR
It can be any surface that is not substantially perpendicular to the c-axis of the crystal structure of material 2410. That is, a suitable surface of ELR material 2410 can be any surface that is not substantially parallel to first surface 2430. In some embodiments of the present invention, a suitable surface of the ELR material 2410 can be any surface that is substantially parallel to the c-axis of the crystal structure of the ELR material 2410. In some embodiments of the invention, EL
A suitable surface for the R material 2410 can be any surface that is not substantially perpendicular to the c-axis of the crystal structure of the ELR material 2410. In order to modify the appropriate surface of c-film 2400 (its first surface 2430 is substantially perpendicular to the c-axis of the crystal structure of ELR material 2410), the appropriate surface of ELR material 2410 is c-film 2400 It may be formed on or in. In some embodiments of the present invention, the first surface 2430 includes:
It can be processed to expose an appropriate surface of ELR material 2410 in or on c-film 2400 on the layer of material to be modified. In some embodiments of the present invention, the first surface 2430 includes one or more openings 2 of ELR material 2410 in or on the c-film 2400 on the layer of material to be modified.
10 can be treated to expose a suitable surface. It will be appreciated that in various embodiments of the present invention, the modifying material may be laminated onto the first surface 2430 in addition to the appropriate aspects described above.

First surface 2430 of c-film to expose appropriate surface and / or opening 210 of ELR material 2410
This processing may include various patterning techniques including various wet methods or dry methods. A variety of different wet methods can include lift-off, chemical etching, or other processes that can use chemicals to expose various other surfaces within the c-film 2400. Various dry methods may be used to modify various suitable surfaces and / or openings 210 of ELR material 2410 within c-membrane 2400.
Can be exposed, including ion or electron bream irradiation, laser direct writing, laser ablation or laser reactive patterning or other processes.

As shown in FIG. 25, the first surface 2430 of the c-film 2400 can be treated to expose an appropriate surface within the c-film 2400. For example, the c-film 2400 is a c-film 2400 that is substantially parallel to the plane in the c-film 2400 that is substantially parallel to the b-plane of the crystal structure 100 or the a-plane of the crystal structure 100. It can be processed to expose the inner surface. More generally, in some embodiments of the present invention, the first surface 2430 of the c-membrane 2400 corresponds to the a / bc plane (ie, a plane substantially parallel to the ab plane).
It can be processed to expose a suitable surface within 2400. In some embodiments of the present invention, the c-film first surface 2430 can be treated to expose any surface within the c-film 2400 that is not substantially parallel to the first surface 2430. In some embodiments of the invention, the c-membrane first
The surface 2430 is not substantially parallel to the first surface 2430 but is substantially parallel to the major axis 2440.
Any surface within 0 can be processed to be exposed. Any of these surfaces, including a combination of these surfaces, is a suitable surface of ELR material 2410 on or in c-film 2400.
According to various embodiments of the present invention, a suitable surface of the ELR material 2410 provides access to the opening 210 in the ELR material 2410 to maintain the opening 210, or an opening in the ELR material 2410. 210
"Expose".

In some embodiments of the invention, the first surface 2430 is treated to form one or more grooves 2510 in the first surface 2430, as shown in FIG. Groove 2510 includes one or more suitable surfaces (ie, surfaces other than those substantially parallel to first surface 2430) on which the material to be modified is deposited. Although the groove 2510 is shown in FIG. 25 as having a substantially rectangular cross section, it will be appreciated that other cross sections may be used. In some embodiments of the present invention, the width of the groove 2510 may be greater than 10 nm. In some embodiments of the invention, as shown in FIG. 25, the depth of groove 2510 may be less than the total thickness of ELR material 2410 of c-film 2400. In some embodiments of the invention, as shown in FIG.
The thickness of the ELR material 2410 of the c-film 2400 may be substantially equal. In some embodiments of the invention, the depth of the groove 2510 can extend through the ELR material 2410 of the c-film 2400 and into the substrate 2420 (not shown). In some embodiments of the present invention, the depth of the groove 2510 may be the thickness of one or more units of ELR material 2410 (not shown). The trench 2510 is formed in the first surface 2430 using various techniques such as laser etching or other techniques, but is not limited to these techniques.

In some embodiments of the invention, the length of the groove 2510 may be the entire length of the c-membrane 2400. In some embodiments of the present invention, the grooves 2510 are substantially parallel to each other and the major axis 2440.
Is substantially parallel to. In some embodiments of the present invention, the groove 2510 can take a variety of configurations and / or arrangements in accordance with various aspects of the present invention. For example, the groove 2510 may extend in any manner and / or direction, and the groove 2510 may be linear, curved, and / or other in cross-section with various sizes and / or shapes along its extent. Of geometric shapes.

While various embodiments of the present invention are described as forming grooves 2510 in the first surface 2430, bumps, angles, or protrusions including appropriate surfaces of the ELR material 2410 may obtain similar shapes. It will be understood that it may be formed on the substrate 2420.

According to various embodiments of the present invention, the c-film 2400 may be modified to form various modified c-films. For example, referring to FIG. 27, the modifying material 2720 (ie, modifying material 1020, modifying material 1020) is on the first surface 2430 and an unmodified c-membrane (eg, c-membrane 2400). It may be laminated in the groove 2510 formed therein. A suitable surface 2710 may include the suitable surfaces described above. A suitable surface 2710 is shown in FIG. 27 as being perpendicular to the first surface 2430, but as will be appreciated from this description, this is not necessary.

In some embodiments of the invention, as shown in FIG.
May be stacked on 0 and in groove 2510. In some embodiments, as shown in FIG. 28, the modifying material 2720 has been modified using various techniques (eg, various polishing techniques) such that the modifying material 2720 remains in the groove 2510. May be removed from the first surface 2430 to form a c-membrane 2800. In some embodiments, a modified c-film can be achieved by stacking the modifying material 2720 only in the trench 2510. In other words, in some embodiments, the modifying material 2720 is laminated only in the groove 2510 and / or on the appropriate surface 2710 without the modifying material 2720 being laminated to the first surface 2430. Or material to change 2
Laminated so that 720 does not bond to or adhere to the first surface 2430 (e.g.
Using various masking techniques). In some embodiments of the present invention, various selective deposition techniques can be used to deposit the modifying material 2720 directly on the appropriate surface 2710.

The thickness of the changing material 2720 in the groove 2510 and / or on the first surface 2430 may vary according to various embodiments of the invention. In some embodiments of the present invention, a single unit layer of modifying material 2720 (ie, a layer having a thickness substantially equal to modifying material 2720) is provided in groove 25.
10 and / or on a suitable surface 2710 on the first surface 2430. In some embodiments of the present invention, two or more unit layers of material 2720 to be modified may be laminated on the appropriate surface 2710 on the groove 2510 and / or the first surface 2430.

Modified c-membranes 2700, 2800 (ie, changing material 2720) according to various embodiments of the invention
Modified c-membrane 2400) may be useful to obtain one or more improved operating characteristics relative to the unmodified c-membrane 2400 operating characteristics.

As shown in FIG. 29, in various embodiments of the present invention, the first surface 2 of the unmodified c-membrane 2400
430 can be modified with a chemical etch to expose or increase the area of the appropriate surface 2710 available on the first surface 2430. In various embodiments of the present invention,
One way to characterize the increased area of a suitable surface 2710 within one surface 2430 is the first of c-membrane 2400
May be based on the surface roughness of the square root (RMS) of surface 2430. In some embodiments of the present invention, as a result of chemical etching, the first surface 2430 of the c-film 2400 includes an etched surface 2910 having a surface roughness in the range of about 1 nm to 50 nm. Can do. RMS surface roughness can be determined using an atomic force microscope (AFM), tunneling microscope (STM), or SEM and can be based on a statistical average of the R range, where R range Is understood to be in the range of the particle size radius (r). The etched surface 2910 of the c-film 2900 after chemical etching is a suitable surface 2710 of the ELR material 2410.

As shown in FIG. 30, after chemical etching, the modifying material 2720 is modified c-film 3000.
Can be laminated on the etched surface 2910 of the c-2900 film to form. The modifying material 2720 can substantially cover the entire surface 2910, and the thickness of the modifying material 2720 can vary depending on various embodiments of the invention. In some embodiments of the present invention, a single unit layer of the modifying material 2720 may be deposited on the etched surface 2910. In some embodiments of the invention, two or more unit layers of the modifying material 2720 may be stacked on the etched surface 2910.

In some embodiments of the present invention, a film having an orientation of the crystal structure of the ELR material other than the crystal structure of the c-2400 film can be used. For example, referring to FIG. 31, according to various embodiments of the present invention, instead of a c-axis orientation oriented perpendicular to the first surface 2430, as in the c-film 2400, the film 3100
B of ELR material 3110 oriented perpendicular to the principal axis 2440 and c-axis oriented perpendicular to the first surface 2430
May have an axis. Similarly, the film 3100 may have a c-axis oriented perpendicular to the a-axis of the ELR material 3110 oriented perpendicular to the major axis 2440 and the first surface 2430. In some embodiments of the present invention, the membrane 3100 may have a major axis 2440 and a c-axis oriented perpendicular to a line parallel to the c-plane oriented along the major axis 2440. As shown in FIG. 31, in these embodiments of the present invention, the film 3100 may include an ELR material 3110 having a c-axis of a crystalline structure oriented perpendicular to the major axis 2440 and parallel to the first surface 3130. Absent. Membrane 3100 is generally referred to herein as ab membrane 3
Called 100. FIG. 31 shows the other two axes of the crystal structure in a particular direction,
Such orientation is not necessary as will be appreciated. As shown, the ab membrane 3100 is
An optional substrate 2420 (such as having a c-film 2400) can be included.

In some embodiments of the present invention, the ab film 3100 is formed from an ELR material 31 oriented as shown in FIG.
An a-film having a c-axis of 10 crystal structures and an a-axis perpendicular to the first surface 3130; Such a films have been developed by Selvamanickam, V. et al., "Conductors coated with high current Y-Ba-Cu-0 using metalorganic chemical vapor deposition and ion beam assisted deposition" Proceedings of the 2000 Applied Superconducti
vity Conference, Virginia Beach, Virginia, September 17-22, 2000, can be formed by various techniques. The article is hereby incorporated by reference in its entirety. In some embodiments, the a-membrane is LGSO, LaSrAIO4, NdCaAIO4,
It can be grown on a substrate 2420 formed of Nd2CuO4 or CaNdAIO4 material. It will be appreciated that other substrate materials may be used.

In some embodiments of the present invention, the ab film 3100 is formed from an ELR material 31 oriented as shown in FIG.
A b-film having a c-axis of 10 crystal structures and a b-axis perpendicular to the first surface 3130.

According to various embodiments of the present invention, the first surface 3130 of the ab film 3100 is a suitable surface 2710.
In some embodiments using an ab film 3100 that forms a suitable surface of the ELR material 3110, the ab film 3100
Forming. Thus, in an embodiment of the invention that includes an ab film 3100, the modifying material 2720 can be used to generate the modified ab film 3200, as shown in FIG.
It may be laminated on the first surface 3130 of the film 3100. In an embodiment of the invention, the material to be modified 272
0 can cover part or all of the first surface 3130 of the ab film 3100. In some embodiments of the present invention, the thickness of the changing material 2720 may vary as described above. More particularly, in some embodiments of the present invention, a single unit layer of modifying material 2720 may be deposited on the first surface 3130 of the ab film 3100. In some embodiments of the present invention, two or more unit layers of the modifying material 2720 may be stacked on the first surface 3130 of the ab film 3100. In some embodiments of the invention, for example, the material 2720 to be modified is laminated thereon
To increase the overall area of the appropriate surface 2710 of the ELR material 3110, the ab film 3100 may be grooved or modified as described above for the c-film 2400.

As will be appreciated, embodiments of the present invention may utilize a layer of ELR material 2410 having a crystal structure that is oriented similar to the crystal structure of ab film 3100, rather than utilizing ab film 3100. .

In some embodiments of the present invention (otherwise not shown), a buffer or insulating material may subsequently be deposited over the membrane modifying material 2720. In these embodiments, the buffer or insulating material and the substrate form a “sandwich” structure with the changing ELR material 2410, 3110 and the changing material 2720, and the buffer or insulating material, as understood, the changing material It may be laminated on 2720.

Any of the materials described above can be laminated on top of other materials. For example, the ELR material can be laminated over the material to be modified. Similarly, the material to be modified may be laminated on the ELR material. Further, laminating can include bonding one material to another material and depositing another material on one material, as will be appreciated. Laminating includes pulsed laser deposition, co-evaporation, evaporation including electron beam deposition and activated reactive deposition, sputtering including magnetron sputtering, ion beam sputtering, ion assisted sputtering, cathodic arc deposition, CVD, Organic metal CVD, plasma
Commonly known lamination techniques such as, but not limited to, CVD, molecular beam epitaxy, sol-gel methods, liquid phase epitaxy and / or other lamination techniques may be used.

Multiple layers of ELR material 2410, 3110, material 2720 to be modified, buffer layer or insulating layer, and / or substrate 1120 may be configured in various embodiments of the invention. FIG. 33 is a diagram illustrating various exemplary configurations of these layers in accordance with various embodiments of the present invention. In some examples, a given layer can also include a modifying material 2720 that also functions as a buffer layer, an insulating layer, or a substrate. As will be appreciated from this description, other configurations or combinations of other configurations may be used. Further, in some embodiments of the present invention, the various layers of ELR material can have different orientations relative to each other in a predetermined arrangement. For example, one layer of ELR material in the composition may have an a-axis of crystal structure oriented along the main axis 2440, or E
Another layer of LR material may have a b-axis of crystal structure oriented along the major axis 2440. Other orientations can be used within a given configuration of various embodiments of the present invention.

FIG. 34 illustrates a process for making a modified ELR material of various embodiments of the present invention. In operation 3410, a suitable surface 2710 is formed on or in the ELR material. ELR material
In some embodiments of the present invention present as ELR material 2410 of c-film 2400, suitable surface 2710 exposes suitable surface 2710 on or within first surface 2430 of c-film 2400. It is formed by letting. In some embodiments of the present invention, a suitable surface of the ELR material 2410 is exposed by modifying the first surface 2430 using either wet or dry processing techniques, or a combination thereof. Is done. In some embodiments of the present invention, the first surface 24
30 can be changed by the chemical etching described above.

In some embodiments of the invention where the ELR material is present as ELR material 3110 in ab film 3100 (with or without substrate 2420), a suitable surface 2710 is ELR on the surface (in the correct orientation described above).
Although formed by laminating material 3110, the surface may or may not include substrate 2420.

In some embodiments of the present invention, a suitable surface 2710 includes a surface of ELR material parallel to the ab plane. In some embodiments of the present invention, a suitable surface 2710 includes a plane of ELR material parallel to the b-plane. In some embodiments of the present invention, a suitable surface 2710 includes a plane of ELR material parallel to the a-plane. In some embodiments of the present invention, a suitable surface 2710 includes one or more planes of ELR material parallel to different ab planes. In some embodiments of the invention, a suitable surface 2710 includes one or more surfaces that are not substantially perpendicular to the c-axis of the ELR material.

In some embodiments of the invention, various operations can be performed. For example, in some embodiments of the invention, a suitable surface 2710 or ELR material can be annealed.
In some embodiments of the present invention, annealing is performed by furnace annealing or rapid thermal processing (RTP).
) An annealing process may be used. In some embodiments of the present invention, such annealing may be performed with one or more annealing processes using a predetermined period, temperature range, and other parameters. Further, as will be appreciated, annealing may be performed in a chemical vapor deposition (CVD) chamber or appropriate for any combination of predetermined time, temperature and pressure that can increase the appropriate surface 2710. Exposure of 2710 to a rough surface. Such annealing may be performed in a gas atmosphere with or without a plasma enhancer.

In operation 3420, the modifying material 2720 may be laminated to one or more suitable surfaces 2710. In some embodiments of the present invention, the modifying material 2720 may be laminated onto a suitable surface 2710 using a variety of lamination techniques including those described above.

FIG. 35 is a diagram illustrating an example of additional processing that may be performed during operation 3420 of various embodiments of the present invention. In operation 3510, a suitable surface 2710 can be polished. As mentioned above,
In some embodiments of the present invention, one or more abrasives can be used.

In operation 3520, various surfaces other than the appropriate surface 2710 can be masked using known masking techniques. In some embodiments of the invention, a suitable surface may be a mask on some or all sides except 2710. In some embodiments of the invention, one or more surfaces other than a suitable surface 2710 can be masked.

In operation 3530, the material 2720 to be modified is applied to the appropriate surface 27 using known lamination techniques described above.
10 (or may be deposited as shown in FIG. 35). In some embodiments of the invention, the modifying material 2720 may be deposited on a suitable surface 2710 using MBE. In some embodiments of the invention, the modifying material 2720 may be deposited on a suitable surface 2710 using PLD. In some embodiments of the invention, the modifying material 2720 is
A CVD may be used to deposit on a suitable surface 2710. In some embodiments of the invention, the modifying material 2720 may be deposited on a suitable surface 2710 using MBE. In some embodiments of the invention, at least 1.7 nm of the modifying material (eg, cobalt) has been tested, but about 40 nm of the modifying material 2720 may be deposited on a suitable surface 2710. In some embodiments of the present invention, fewer modifying materials can be used, for example, on the order of a few angstroms. In some embodiments of the invention, the material to be modified 27
20 may be deposited on a suitable surface 2710 in a vacuum chamber having a pressure of 5 × 10 ⁻⁶ torr or less. Various chambers can be used, including chambers used for processing semiconductor wafers. In some embodiments of the present invention, the CVD process described herein may be performed in a CVD reactor. Such CVD reactors are named 7000 from Genus, Inc. (Sunnyvale, Calif.), 5000 from Applied Materials (Santa Clara, Calif.), Or Novellus (San Jose, Available under the trade name Prism from California. However, any reaction chamber suitable for carrying out by MBE, PLD or CVD can be used.

FIG. 36 illustrates a process for forming a modified ELR material of various embodiments of the present invention. Specifically, FIG. 36 shows a process for forming and / or modifying an ab film. In optional operation 3610, a buffer layer is deposited on the substrate 2420. In some embodiments of the invention,
The buffer layer includes PBCO or other suitable buffer material. In some embodiments of the invention, a substrate
2420 includes LSGO or other suitable substrate material. In operation 3620, ELR material 3110 is laminated onto a substrate 2420 having a suitable orientation as described above in FIG. As will be appreciated, depending on the optional operation 3610, the ELR material 3110 is deposited on the substrate 2420 or buffer layer. In some embodiments of the present invention, the layer of ELR material 3110 is two or more unit layer thicknesses. In some embodiments of the present invention, the layer of ELR material 3110 is several unit layers thick. In some embodiments of the present invention, the layer of ELR material 3110 is a thickness of a plurality of unit layers. In some embodiments of the present invention, the layer of ELR material 3110 is a number of unit layer thicknesses. In some embodiments of the present invention, the ELR material 3110 is formed on the substrate 242 using an IBAD process.
Laminated on top of 0. In some embodiments of the present invention, ELR material 3110 is laminated onto substrate 2420 while exposed to a magnetic field to improve the orientation of the crystalline structure in ELR material 3110.

In any operation 3630, a suitable surface 2710 of ELR material (first relative to ab film 3100)
The surface 3130) is polished using the various techniques described above. In some embodiments of the present invention, polishing is accomplished without introducing impurities onto a suitable surface 2710 of ELR material 3110. In some embodiments of the invention, polishing is accomplished without contaminating the clean room. Operation 3640
In, the modifying material 2720 is laminated onto a suitable surface 2710. In any operation 3650,
Although a covering material such as silver is laminated on the entire change material 2720, the covering material is not limited to silver.

Some embodiments of the invention may be used in bulk or in a membrane (eg, EL in c-membrane 2400).
R material 2410, ELR material 3110 in ab membrane 3100, or other membrane or tape)
Or modified EL used in other methods (eg wire, foil, nanowire, etc.)
R material 106 can be incorporated into a variety of products, systems and / or devices as described herein.

Various embodiments of the present invention will be described below in terms of "modified" ELR materials, as will be understood, but the various embodiments can be improved without departing from the scope of the present invention. New ELR materials with different operating characteristics can be included. Further, as will be appreciated, various embodiments can include any material that exhibits some or all of the improved operational characteristics described herein without departing from the scope of the invention. That is, the various embodiments may be modified ELR materials, apertured ELR materials, non-generic ELR materials, and / or exhibiting some or all of the improved operational characteristics described herein. Alternatively, other materials may be included. In various embodiments, the ELR materials described herein, such as modified ELR materials and / or apertured ELR materials, are one of many different current carrying components such as films / tapes, wires, nanowires, etc. Or are formed therein and used in the devices, systems, and other embodiments of the present invention. The following are examples of components that carry current, but those skilled in the art
It will be appreciated that it can be used for others.

Nanowire nanostructures with widths and diameters on the order of tens of nanometers or less, and generally unspecified lengths, segments, contours that can carry current from one point to another with very low resistance Used to form coils, and / or other structures.
Nanostructures can be found in a variety of nanowire structures, including individual structures, integrated on or in a substrate, mounted on or in a support structure, and other nanowire structures. Can be formed.

The foil comprising the ELR material on or in the flexible membrane / tape, such as a metal tape, is an ELR with a metal tape, an optional metal coating, and / or a metal oxide buffer Although it is a material etc., it is not limited to it. Texture can be introduced into the tape using rolling assist, biaxial textured substrate (RABiTS) processes, and the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam, such as using an ion beam assisted deposition (IBAD) process, on an untextured alloy substrate. Others such as chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (ALL-MBE), and other solution deposition techniques to produce ELR tapes Techniques may be used.

The plurality of wires and one or more ELR components may be sandwiched to form a macroscale wire with other current carrying components.

Thus, in some embodiments, forming and / or integrating the ELR materials described herein into components that carry various currents can cause the ELR materials to be Facilitates incorporation into devices and systems that utilize, generate, transform, and / or transport electrical energy. These devices and systems operate more efficiently compared to conventional devices and systems, operate at lower costs compared to conventional devices and systems, and compare to conventional devices and systems Thus, operating with less waste can benefit from improved operating characteristics and other improved operating characteristics.

Laminated composition showing very low resistance The description in this section refers to FIGS. 1-Z to 7-Z. Accordingly, all reference numbers included in this chapter refer to the components described in FIGS. 1-Z through 7-Z.

For purposes of this description, compositions according to various embodiments of the present invention include perovskite materials (eg, ELR materials such as YBCO, etc., or materials that change or components (referred to interchangeably). ELR materials generally have one or more layers of modifying components applied to the ELR material from the outside, one or more modifying components that readily impart strain within the ELR material,
One or more layers of different ELR materials, one or more layers that facilitate the application of strain in another layer of ELR materials, one or more layers of ELR materials having different crystal orientations Including one or more modifying components that facilitate the application of strain in other layers of ELR materials, one or more modifying components as described above, and / or other modifying components However, it is not limited to these.

In some embodiments, the composition includes one or more modifying components that are applied to or formed on the ELR material within the charge surface of the ELR material and / or the proximity of the charge reservoir. Also good. For example, the composition is applied or formed on a suitable surface of the YBCO layer,
A YBCO layer and a layer of changing material may be included. In some embodiments, this surface is YBCO
substantially parallel to the c-axis. In some embodiments, this surface is substantially perpendicular to the YBCO a-axis. In some embodiments, this surface is substantially perpendicular to the Y axis of the YBCO. In some embodiments, other suitable surfaces may be used.

In some embodiments, applying the modifying component to the ELR material can cause one or more oxygen atoms in the crystal structure of the ELR material to move into the ELR material and oxygen to pull the crystal structure of the ELR material. May form a concentration gradient. In some embodiments, the modifying component, such as chromium, acts as a “getter” for the oxygen atoms in the ELR material, thereby moving the oxygen atoms toward the modifying component, and then the ELR material. It may pull in the crystal structure or a part of it.

In some embodiments, the composition may include multiple layers of different ELR materials. Such different ELR materials may contain different atoms and / or different rare earth metal atoms (eg, YBCO and DyBCO, YBCO and NBCO, DyBCO and NBCO, etc.) and / or oxygen in different crystal structures. Containing the content (eg, stoichiometry / fraction ₇ between Os and O7 in YBCO) and / or including different crystal orientations (eg, a-axis YBCO and b-axis YBCO, etc.) It is not limited. Such compositions can be laminated so that different layers of ELR material distort the regions within the composition or some regions of the composition.

In some embodiments of the invention, strains in various regions or portions of the composition may cause the ELR material's crystalline structure to improve operating characteristics (eg, operating temperature, current capacity, etc.) of the ELR material. Affects the opening of the.

Changing a material having a crystalline structure can cause a low resistance, such as a very low resistance, to cause a current to flow through the material at a temperature higher than the temperature at which the material is expected. In some examples, the modification can include applying or forming a layer of modifying material on a suitable surface, as described above. A layer with or formed of a modifying material can generate strain or exert a force on some or all of the atoms and / or bonds that make up the material's crystal structure. This force or strain may change the material so that the material exhibits different resistance characteristics such as low resistance or very low resistance. That is, when a force or strain occurs in the material, the material generates and / or maintains an oxygen diffusion gradient at a specific location and / or a specific region within the material, and / or
Or make the crystal structure of the material twist, distort, open, close, harden, or open geometry in the material that facilitates the transport of electrons from one place to another The orientation and / or geometry may be maintained or changed, such as maintained or changed.

Various embodiments of the present invention can facilitate the application of force or tension to the ELR material.
In some examples, the force may be applied externally and / or non-invasively to various portions of the ELR material. In some examples, the force can cause internal stress, strain, or other forces on various portions of the ELR material. For example, the portion may be a portion of an ELR material that includes oxygen atoms, a portion of an ELR material that includes the copper-oxygen surface of the atom, a portion of ELR material that includes a charge reservoir, and an ELR material that includes an opening in the crystal structure of the ELR material. A portion of ELR material corresponding to the a-plane of material (ie substantially parallel), a portion of ELR material corresponding to the b-plane of material (ie substantially parallel), and the c-axis of the material May be a portion of ELR material, including a portion of ELR material corresponding to a substantially parallel plane, a portion of ELR material disposed near or in proximity to the surface of the material, or other portion of ELR material .

Using various information described herein, various embodiments of the present invention may be understood as various compositions described in detail below.

Various embodiments of the present invention can include various compositions, such as compositions having ELR materials and changing materials that are set and / or adapted to carry current from one location to another. . That is, such a composition conducts electrons from one place to another.

In some embodiments, the various compositions include one or more modifying materials applied or formed on a suitable surface of the ELR material. FIG. 1-Z illustrates a modified ELR material composition 100 having an ELR material 110 (referred to herein as an unmodified ELR material 110) and a modifying material 120 applied to the surface of the ELR material 110. (Referred to herein as a modified ELR material 100).

In some embodiments, ELR material 110 may be representative of a family of superconducting materials commonly referred to as mixed valence copper oxide perovskites, as described above. Mixed valence copper oxide perovskite materials may include, but are not limited to, various substitutions of the material's cations. The above named mixed valence copper oxide perovskite materials are many, such as rare earth metals (Re), barium (Ba), copper (Cu) and oxygen (O), or a class of perovskite materials including "REBCO" Can refer to a general class of materials where different chemical formulas exist. Exemplary REBCO materials are YBCO, NBCO, HoBCO, GdBCO, DyBCO, suitable
Others with 1-2-3 stoichiometry can be included.

In some examples, the ELR material 110 can include HTS materials that fall outside the family of mixed valence copper oxide perovskite materials (“non-perovskite materials”). Such non-perovskite materials include, but are not limited to, iron pnictides, magnesium diboride (MgB2), and other non-perovskites. In some embodiments,
The ELR material 110 may be other superconducting materials or non-superconducting materials.

In some embodiments, the modifying material 120 may be a metal such as, for example, chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium, or a metal oxide such as a metal. In some embodiments, the modifying material 120 is one or more of a high oxygen affinity material, a “getter” material, a lattice constant that is different from that of the ELR material 110, which can strain the ELR material 110. It may be a material (including another ELR material) having the above lattice constant. For example, in some embodiments, the modifying material 120 can easily combine with, attract, or trap oxygen to cause strain in the ELR material 110, or the oxygen content and May have a strong oxygen affinity that alters the oxygen distribution within the ELR material. In some embodiments, the modifying material 120 may have one or more lattice constants that do not match the lattice constant of the ELR material 110 to cause distortion in the ELR material 110.

For example, one effect of depositing chrome-changing material 120 on the surface of ELR material 110 is E
An oxygen gradient may be formed near the surface of the LR material 110. In some embodiments, the modifying layer 120 is disposed on the surface of the ELR material substantially perpendicular to the a-axis or b-axis of the ELR material, and the modifying layer 120 is oxygenated within the ELR material. May result in the creation of a concentration gradient. In some embodiments, the modifying layer 120 is disposed on the surface of the ELR material that is substantially parallel to the c-axis of the ELR material that can result in the creation of an oxygen concentration gradient in the ELR material.

In some embodiments, ELR material 110 has a charged surface that includes one or more atoms that partially form an opening. For example, YBCO is formed from various yttrium ("Y"), barium ("Ba"), copper ("Cu") and oxygen ("O") atoms. Openings in YBCO are formed by open atoms, ie, yttrium, copper, and oxygen atoms, and charge surfaces in YBCO are formed by various copper (“Cu”) and oxygen (“O”) atoms.

FIG. 2-Z shows the substrate 230, two or more modifying components 210, 215 and modifying components 210, 2
A composition 200 comprising ELR material 220 disposed between 15 is shown. In particular, the changing components 210, 215
Bonded or formed to the upper and lower surfaces of ELR material 220. In some embodiments of the present invention, the top and bottom surfaces of ELR material 220 are suitable surfaces of ELR material 220 (eg, surfaces that are substantially perpendicular to the a-axis of ELR material 220). Accordingly, the composition 220 may be distorted proximate to the top surface of the ELR material 220 by the modifying material 210 and distorted proximate to the bottom surface of the ELR material 220 by the modifying material 215 disposed on the substrate 230.

By applying a modifying material to one or more surfaces of the ELR material, various embodiments of the present invention control the application of strain and the strain of the ELR material at various locations of the ELR material. Can do. For example, the strain of the ELR material at one or more locations with charged surfaces, one or more unit cells of the ELR material, one or more ELR material openings, and / or elsewhere Can be controlled.

Some embodiments of the present invention may comprise a superlattice layer of ELR material that acts to enhance the properties of one or more of the superlattice layers of ELR material.

FIG. 3-Z is a block diagram of a composition 300 that includes layers of different ELR materials according to various embodiments of the present invention. More specifically, the composition 300 comprises a first layer 310 of ELR material referred to as “ELR-X”.
And a second layer 320 of ELR material referred to as “ELR-Y”. As shown in Figure 3-Z, the first
Layer 310 is formed or applied over substrate 330 and second layer 320 is formed or applied over first layer 310. As will be appreciated, in some embodiments of the present invention, the substrate 330 is optional. Although the composition 300 is illustrated as having a first layer 310 and a second layer 320, the composition 300 has a first layer such that the first layer 310 and the second layer 320 are alternately formed. 31
Any number of 0 and second layer 320 pairs may be included. In some embodiments, ELR-X is a first ELR material and ELR-Y is a second ELR material that is different from the first ELR material. For example, in some embodiments of the invention, ELR-X may be YBCO and ELR-Y may be NBCO. As will be appreciated, other ELR materials can be used.

FIG. 4-Z is a block diagram of a composition 400 that includes layers of different forms of the same ELR material in various embodiments of the invention. Specifically, the composition 400 includes a first layer 410 of a first form of ELR material referred to as “ELR-X Form 1” and a first layer of ELR material referred to as “ELR-X Form 2”. 2nd form of 2
Including layer 420; In some embodiments, the same basic ELR material can have different crystal orientations, different oxygen stoichiometry / fractions (eg, O ₆ , O _7, etc. in YBCO), different variants, and other different Although it has different forms, such as a form, it is not limited to these. As will be appreciated, other forms of the same ELR material can be used. As shown, the first layer 410 is a substrate 43.
Formed or applied on 0, the second layer 420 is formed or applied on the first layer 410. As will be appreciated, in some embodiments of the present invention, the substrate 430 is optional. Although the composition 400 is illustrated only as having a first layer 410 and a second layer 420, the composition 400 is a first layer 4.
Any number of pairs of first layer 410 and second layer 420 in which 10 and second layer 420 are alternately formed may be included.

As described, composition 400 includes multiple layers of different forms or variants of the same ELR material (e.g., REBCO), where different forms of these same ELR materials are in one or more of the ELR materials. May cause distortion. For example, changing the oxygen content between layers (eg YB
Varying the oxygen stoichiometry / fraction between Os and O7 in CO) may cause inter-layer lattice mismatch that distorts the bonding of the crystal structure of the ELR material in the layer. Also, for example, between layers EL
Changing the crystal orientation of the R material (eg, one layer of ELR material has an a-axis orientation and another layer has a b-axis orientation) causes lattice mismatch between the layers, and so on May cause serious distortion.

FIG. 5-Z shows a composition 500 that includes multiple layers of different ELR materials. As shown, composition 500 includes a first layer 510 of ELR material referred to as “ELR-X” and E referred to as “ELR-Y”.
It includes a second layer 520 of LR material and a third layer 530 of ELR material referred to as “ELR-Z”. As shown, the first layer 530 is formed or deposited on the substrate 540, the second layer 510 is formed or deposited on the first layer 530, and the third layer 520 is , Formed on or attached to the second layer 510. As will be appreciated, in some embodiments of the invention, the substrate 530 is optional. In some embodiments of the invention, the plurality of ELR materials included in the layer of composition 500 are different.
Either an ELR material (see Fig. 3-Z above) or a different form of the same ELR material (see Fig. 4-Z above).

Although not shown in FIGS. 3-Z to 5-Z, various other layers of non-ELR material are shown in FIG.
It may be included in a composition 300, 400, 500 (or other composition described herein) that includes a layer interspersed between one or more layers.

Generating compositions 300, 400, 500 that are formed of different ELR materials or layers of different forms of ELR materials, various embodiments of the present invention can produce lattice mismatches between various REBCO materials (e.g., YBC
O and NBCO), or other materials with similar lattice constants (eg, BSCCO, etc.) can be used to stress / distort various layers of the ELR material layer. In some embodiments, the added strain is the phonon frequency around the opening in the crystal structure of the ELR material, and / or
Or, change the distribution and / or amplitude, allowing for a reduction in the resistance of the ELR material, allowing improved operating characteristics and other benefits such as operating in ELR conditions at higher temperatures, It is not limited.

In some embodiments of the present invention, the superlattice layer of the composition 300, 400, 500 is a suitable surface of the ELR material in the layer (eg, a surface substantially perpendicular to the a-axis of the ELR material, ELR The material's b-axis substantially perpendicular surface, the surface substantially parallel to the ELR material's c-axis, etc.) are formed to be the interface between the ELR materials. In other words, for example, the surface forming the interface between layers 510, 520 in FIG. 5-Z is a surface that is substantially perpendicular to the a-axis of both ELR-Y and ELR-X, ELR- A surface that is perpendicular to the b-axis of both Y and ELR-X, or a surface that is substantially parallel to the c-axis of both ELR-X and ELR-Y.

Of course, there may be many layers of the same and / or different ELR materials in the compositions of the various embodiments of the present invention. In some embodiments, composition 500 is formed by depositing a layer having a first thickness of REBCO material, and then depositing a layer having a second thickness of REBCO material, then A layer having a third thickness of REBCO material may be deposited. Here, the REBCO material of the second layer has one or more lattice constants different from the lattice constants of the first material and the third layer material. Furthermore, the first, second and third thicknesses may be completely different from each other, the same as each other, or some may be the same and some may be different. Different numbers of REBCO layers and / or different REBCO layer thicknesses may be deposited to improve the operational characteristics of the composition such as various temperature, resistance, and / or current carrying capacity of the composition. However, it is not limited to these.

In some embodiments of the invention, the composition may be laminated as follows (from bottom to top).
_{ELR 1: ELR 2: ELR 1} : ELR 2: ELR 1: ELR 2: ELR 1: ELR 2: such as.

In some embodiments of the invention, the composition may be laminated as follows (from bottom to top).
ELR ₁ : ELR ₂ : ELR ₃ : ELR ₄ : ELR ₃ : ELR ₂ : ELR ₁ : ELR ₁ : ELR ₂ : ELR ₃ : etc.

In some embodiments of the invention, the composition may be laminated as follows (from bottom to top).
_{ELR 1: ELR 2: ELR 3} : ELR 4: ELR 3: ELR 4: ELR 3: ELR 4: ELR 3: such as.

In some embodiments of the invention, the composition 500 may be laminated as follows (from bottom to top).
_{ELR 1: ELR 2: ELR 3} : ELR 2: ELR 3: ELR 2: ELR 3: ELR 2: ELR 3: such as.

Thus, these layers can be selected for various reasons: For example,
To improve the composition generation process, to increase the current carrying capacity of the composition, to generate controlled strain in one or more layers, to improve lattice constant mismatch In order to improve the creation of a layer on top of another layer, it can be selected. Also, the thickness of the layer, such as the number of unit cells per layer, may be selected to adjust the strain on the layer in order to increase current carrying capacity and the like.

In some embodiments of the present invention, the number of layers, the type of ELR material in one or more layers, 1 to obtain the desired properties of the composition or to produce the composition, 1 Other non-ELR material types in one or more layers, the thickness of one or more layers, the orientation of one or more layers, the order of one or more layers, and / or The other parameters of the composition can be varied, defined and / or selected.

FIG. 6-Z illustrates an exemplary composition 600 formed of a superlattice that includes multiple layers of various ELR materials according to some embodiments of the present invention. As shown in FIG. 6-Z, the composition 600 comprises a LaSrGa04 (LSGO) substrate 610 having a top surface that is substantially perpendicular to the a-axis of the substrate. Examples of other substrates that can be used include, but are not limited to, strontium titanate (STO) or magnesium oxide (MgO). YBCO layers 620 are formed on the substrate 610, followed by alternating YBCO layers 632 and NBCO layers 634. As an example, composition 600 has 2
YBCO layer 620 formed with a thickness of 00 nm, and NBCO and YBCO layers formed on YBCO layer 620
634, 632 alternating pairs of layers can be included. Where the thickness of each layer is 10nm, (
That is, 10 nm YBCO and 10 nm NBCO alternating layers). Although not shown, the composition 600 can include other layers. For example, including layers of buffer material, additional or several pairs of alternating layers, additional layers of other ELR materials, additional or other substrate layers, layers such as other or different thickness layers, etc. be able to.

In some embodiments of the present invention, the barrier material can be used to substantially encase the various compositions described above. The barrier material can be used to substantially prevent oxygen in the crystal structure of the ELR material from diffusing from the composition. In some examples, gold can be deposited on the entire surface of the composition to substantially encapsulate the composition. Other barrier materials such as silicon dioxide or indium tin oxide (ITO) can be used. In some examples, 5-10 nm of gold is deposited on the entire surface of the composition, but is not limited to this, and other thicknesses can be used.

Figure 7A-Z-7I-Z is an LSGO substrate and an a-axis orientation on the LSGO substrate (eg, YBCO a-axis)
About 10 nm YBCO formed thereon, and about 10 nm NBCO layer and about 10 nm YBCO layer alternately stacked thereon, each of the 10 sets of layers It is a figure which shows the test result of the sample of the composition in which about 8.5 nm gold | metal | money is formed on the layer formed in the a-axis orientation on the layer, and the barrier material which wraps a sample on it.

The test results of FIGS. 7A-Z to 7I-Z include the relevant portion of the resistance plot as a temperature function (Kelvin) of the sample under various experimental conditions, as described below. Specifically, the plot is 180K
This is a measurement of the resistance of the sample in the temperature range of -270K. Before describing the test results in detail, a brief description of the inspection equipment and setup is given.

The sample was mounted on a PCB substrate using double-sided tape. A 0.004 "diameter tinned copper wire was attached to the top of the gold surface of the sample using indium solder. Both ends of these wires were attached to pads on the PCB substrate. This assembly was attached to the cryostat. The Keithley 6221 power supply provided DC current to the sample, while the Keithley 2182a voltmeter makes "delta mode" resistance measurements (eg, R = (((V +)-(V-)) / 2)) for,
The voltage drop across the sample was measured. A thermal resistance device ("RTD") was used to measure temperature.

In some tests, the sample was first cooled to a temperature below the YBCO transition temperature and warmed. In other tests (to save time and coolant, and to avoid unnecessarily applying thermal stress), the samples were cooled below 160K and warmed. In either case, when the sample was warmed, a voltage measurement across the sample was obtained along with measuring the temperature of the sample. From the voltage measurement, the resistance in delta mode is determined, then resistance vs. temperature or R
(T) Plotted as a curve (or called RT profile). 7A-Z to 7I-Z
The test results are shown.

FIGS. 7A-Z to 7H-Z are individual R (T) curves of 8 tests of samples in the order in which the tests were performed (ie, FIGS. 7A-Z are R (T) of the first test) Figure 7B-Z shows the second trial R (T
) Is a curve). 7A-Z to 7D-Z and FIG. 7H-Z are R (T) curves in a test in which the sample was driven by a direct current of 200 nA. FIGS. 7E-Z-7G-Z are R (T) curves in tests where the sample was driven by 100 nA DC. In addition to delta mode resistance form voltage measurements, other smoothing decisions, averaging or other data processing was used.

FIGS. 7I-Z are R (T) curves of single test results for different test beds and samples under different conditions than FIGS. 7A-Z-7H-Z. In particular, in this test, an SR830 lock-in amplifier (LIA) was employed, and the sample was based on an alternating current of 200 nA at 24 Hz with a time constant of 1 second.

As shown in the figure, all of the tests included one or more changes in the R (T) curve, approximately within the range of 210K-240K. These changes in the slope of the R (T) curve are believed to be consistent with a portion of the sample entering a reduced resistance or ELR state. As can be seen, similar changes are not observed in either the YBCO or NBCO R (T) curves.

Some embodiments of the present invention may include alternating layers having thicknesses less than those described above for FIG. 6-Z. In some embodiments of the present invention, at least one of the layers in the superlattice may be one, two, three, or more unit cell thicknesses. In some embodiments of the present invention, each layer of the alternating pair of layers in the superlattice may be one, two, three, or more unit cell thicknesses. In some embodiments of the present invention, the thickness of one layer of a pair of alternating layers (or other grouping) is different from the thickness of the other layer of the pair. In some embodiments of the invention, the thickness of one of the layers of the superlattice alternating layer pair is different from the thickness of the other layer of the superlattice alternating layer. As will be appreciated, other thicknesses may be used to achieve various operational characteristics as described herein.

Some embodiments of the present invention may include multiple Re atoms in a single layer, such as, for example, a layer having multiple Re atoms having different sizes. For example, the REBCO layer may have a lattice structure, where every four 5Re are Y atoms and every fifth atom is a Dy atom. Layers that contain two or more rare earth atoms in their crystal structure may introduce additional strain forces into the composition due to ordering effects, localized lattice mismatch, additional vibration constants, etc. Can do.

Some embodiments of the invention may include Re atoms that are selected based on the oxidation state.
For example, Y and Nd have one oxidation state (3 ⁺ ), but samarium (Sm), europium (
Eu), erbium (Er), thulium (Tm), and ytterbium (Yb) can have two oxidation states 3 ⁺ and ²⁺ . Cesium (Ce) and terbium (Tb) can have two oxidation states 3 ⁺ and 4 ^+. As will be appreciated, Re atoms having other oxidation states can also be selected. In such embodiments, Re atoms having various oxidation states in the ELR layer of the composition help to fix oxygen sites and / or carrier defects within the crystal structure or openings in the crystal structure, and / or The amount of local oxygen in the layer can be stabilized. For example, a layer of ELR material in the superlattice, as Re atom, with little Ce4 ⁺ atoms and slight Ce @ 3 ⁺ atoms which is used to control the oxygen / carrier defects in the layer mainly containing the Y atom But you can.

In some embodiments of the present invention, a layer of material having a very low oxygen affinity (eg, gold) reduces the rate at which oxygen diffuses from or into the superlattice layer. In addition,
It is formed on the outermost layer of the superlattice. In some embodiments of the present invention, a layer of material having a very low oxygen affinity (eg, gold) reduces the rate at which oxygen diffuses from or into the superlattice layer. And formed on all outermost layers of the superlattice.

In some embodiments of the present invention, various manufacturing processes used in creating a superlattice of a layer of ELR material can introduce the desired strain into the material. For example, ELR on the board
When depositing a layer of material, changing the temperature of the substrate and / or the partial pressure of oxygen during deposition allows the material to be deposited at "normal" temperatures, and the strain Will be introduced as it cools below the deposition temperature.

Thus, some embodiments of the invention can include a superlattice. Here, in practice, each layer in the superlattice acts to change the adjacent layer. In other words, the layer
Both the ELR material itself and the modifying layer relative to another layer of ELR material, the layers in the superlattice together form the modified ELR material. According to some embodiments of the present invention, the composition of different layers of ELR material, varying types, oxygen content, rhenium atom type, orientation, etc. may be sufficient to strain one or more layers of the composition. And the layers can exhibit a low or very low resistance to current carried in or between the layers.

According to some embodiments of the present invention, the compositions 100, 200, 300, 400, 500, and / or
Or 600 can be used in bulk, incorporated into membranes or tapes, or other methods (
(E.g., wires, foils, nanowires, etc.) can be incorporated into various devices and related devices as described herein. For example, the composition can be a capacitor, inductor, transistor, conductor and conductive element, integrated circuit, antenna, filter, sensor, magnet, medical device, power cable, energy storage device, transformer, appliance, mobile device, computer. It can be utilized and / or incorporated into devices, information storage devices, other devices and systems that transport electronic and / or information in use.

Thus, in some embodiments, forming the modified ELR material described herein and / or integrating it into a component carrying various currents may include an example of the modified ELR material, Allows and / or facilitates incorporation into devices and systems that utilize, generate, convert, and / or transfer electrical energy, such as electrical current. These devices and systems operate more efficiently compared to conventional devices and systems, and operate at lower costs compared to conventional devices and systems. By operating without waste, it is possible to benefit from the improved operating characteristics obtained.

In some embodiments, the composition includes a first layer of ELR material having a crystalline structure,
A second layer of material formed on the layer is included. Here, the second layer applies strain to at least part of the ELR crystal structure. In some embodiments, the second layer of material applies a controlled strain within at least a portion of the crystal structure of the ELR material. In some embodiments, the second layer of material is
Distorts the local crystal structure of the ELR material, including the charge surface. In some embodiments, the second layer of material distorts a location in the crystal structure of the ELR material that includes the opening in the crystal structure.

In some embodiments, the current conducting composition includes a first layer of ELR material having a copper oxide charge surface and a second layer of material formed on the first layer. The second layer includes a charge surface of copper oxide
Strain is induced in at least a portion of the first layer of ELR material. In some embodiments, the second of the material
The layer induces strain at least outside the first layer of ELR material. In some embodiments, the second layer of material induces strain at least within the first layer of ELR material. In some embodiments, the second layer of material induces oxygen atom diffusion into the first layer of ELR material. In some embodiments, the second layer of material induces a diffusion gradient of oxygen atoms within the first layer of ELR material.

In some embodiments, the composition includes a conductive material having a crystalline structure and a material formed on the conductive material. This material generates a force that is applied within a portion of the crystalline structure of the conductive material. In some embodiments, the conductive material is a rare earth copper oxide material, and the material that generates the force applied to the crystalline structure portion of the conductive material is a metal having a high oxygen affinity.

In some embodiments, the composition includes a first ELR material having a crystalline structure and a second ELR material formed on the first ELR material. The second ELR material creates a force on a portion of the crystal structure of the first ELR material.

In some embodiments, the composition includes a first ELR material and a second ELR material having a crystalline structure formed on the first ELR material. The first ELR material exerts a force on part of the crystal structure of the second ELR material.

In some embodiments, the composition includes a first ELR material having a crystalline structure and a second ELR material having a crystalline structure formed on the first ELR material. The second ELR material applies a force to a part of the crystal structure of the first ELR material, and the first ELR material applies a force to a part of the crystal structure of the second ELR material.

In some embodiments, the composition comprises a first layer of ELR material having a first form, a second layer of ELR material having a second form formed on the first ELR material, and on the second layer. And a third ELR material having a first form of ELR material.

In some embodiments, the composition includes a first layer of YBCO and a plurality of layers formed on the top surface of the YBCO. The plurality of layers includes a pair of alternating layers of NBCO and YBCO. In some embodiments, YBCO
The first layer has a thickness of about 200 nanometers, and each layer in the plurality of layers has a thickness of about 10 nanometers. In some embodiments, the plurality of layers includes 10 pairs of alternating layers of NBCO and YBCO. In some embodiments, the plurality of layers includes at least two pairs of alternating layers of NBCO and YBCO.

In some embodiments, the composition for current propagation comprises a plurality of layers comprising at least one pair of alternating layers of NBCO and YBCO. In some embodiments, the layer set includes at least 10 pairs of alternating layers of NBCO and YBCO. In some embodiments, a substrate having a surface substantially perpendicular to the a-axis of the substrate and a layer of YBCO applied to the surface of the substrate and having a surface substantially perpendicular to the a-axis of YBCO Including. A group of layers is applied to the surface of YBCO.

In some embodiments, the composition comprises a YBC having a surface substantially parallel to the c-axis of YBCO.
A first layer of NBCO formed on the surface of the base layer of O and the base layer of YBCO, the first layer of NBCO having a surface substantially parallel to the c-axis of NBCO, and the first layer of NBCO YBCO first formed on the surface of the layer
A first layer of YBCO having a surface substantially parallel to the c-axis of YBCO, and a second layer of YBCO
A second layer of NBCO formed on the surface of one layer, the second layer of NBCO having a surface substantially parallel to the c-axis of NBCO, and the surface of the second layer of NBCO YBCO's second layer, YBCO
A second layer of YBCO having a surface substantially parallel to the c-axis of the second layer, and a third layer of NBCO formed on the surface of the second layer of YBCO, the second layer of NBCO substantially A third layer of NBCO having a generally parallel surface and a third layer of YBCO formed on the surface of the third layer of NBCO, the surface having a surface substantially parallel to the c-axis of YBCO NBCO formed on the surface of the third layer of YBCO and the third layer of YBCO
A fourth layer of NBCO having a surface substantially parallel to the c-axis of NBCO, and N
A fourth layer of YBCO formed on the surface of the fourth layer of BCO, the fourth layer of YBCO having a surface substantially parallel to the c-axis of YBCO, and the surface of the fourth layer of YBCO A fifth layer of NBCO formed on the surface of the fifth layer of NBCO and a fifth layer of NBCO having a surface substantially parallel to the c-axis of NBCO A fifth layer of YBCO having a surface substantially parallel to the c-axis of YBCO, and a sixth layer of NBCO formed on the surface of the fifth layer of YBCO, C
A sixth layer of NBCO having a surface substantially parallel to the axis, and a sixth layer of YBCO formed on the surface of the sixth layer of NBCO, wherein the sixth layer is substantially parallel to the c-axis of YBCO. 6th of YBCO with parallel surface
A seventh layer of NBCO formed on the surface of the sixth layer of YBCO, the seventh layer of NBCO having a surface substantially parallel to the c-axis of NBCO, and the seventh layer of NBCO A seventh layer of YBCO formed on the surface of the seven layers, the seventh layer of YBCO having a surface substantially parallel to the c-axis of YBCO;
NBCO's eighth layer formed on the surface of the seventh layer of NBCO, which has a surface substantially parallel to the c-axis of NBCO, and the surface of the eighth layer of NBCO An eighth layer of YBCO formed, which has a surface substantially parallel to the c-axis of YBCO, an eighth layer of YBCO, and a ninth layer of NBCO formed on the surface of the eighth layer of YBCO. N with a surface substantially parallel to the c-axis of NBCO
A ninth layer of BCO, and a ninth layer of YBCO formed on the surface of the ninth layer of NBCO, the ninth layer of YBCO having a surface substantially parallel to the c-axis of YBCO; , Formed on the surface of the 9th layer of YBCO
10th layer of NBCO, the 10th layer of NBCO having a surface substantially parallel to the c-axis of NBCO
And a YBCO tenth layer formed on the surface of the NBCO tenth layer, the YBCO tenth layer having a surface substantially parallel to the c-axis of YBCO. In some embodiments, the composition further comprises a gold layer formed on the surface of the tenth layer of YBCO. In some embodiments, the composition further comprises a layer of gold that substantially encloses the composition.

Devices formed from ELR materials and / or devices incorporating ELR materials Various devices, applications, components, apparatus, and / or systems can use the ELR materials described herein. These devices, applications, components, apparatuses, and / or systems are described in more detail below.

Chapter 1 Nanowires Made of ELR Material Refer to Figures 1-36 and Figures 37-A to 45B-A for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in those figures.

In various embodiments of the present invention, ELR materials can be used to form various nanowires and nanowire components described in more detail below. Thus, in some embodiments of the invention, these ELR materials are formed into various nanowire components,
The current may be conducted mainly along the b-axis of the ELR material. In these examples, FIG. 39-A
As shown in the ELR material, the b-axis is the reference length, the c-axis is the reference width, and the a-axis is the reference depth (or thickness)
It will be apparent from this description that other reference frames, orientations, and configurations may be used for the ELR material. The reference frame shown in Figure 39-A is
Used in the following description.

In some embodiments of the present invention, various ELR materials can be used to form nanowires. In conventional terms, a nanowire is a nanostructure with a width or diameter on the order of tens of nanometers or less and generally having a distorted length. In some embodiments of the invention, various modified ELR materials 1060 can be formed into nanowires having a width and / or depth of 50 nanometers. In some embodiments of the invention, various changes were made.
The ELR material 1060 can be formed into nanowires having a width and / or depth of 40 nanometers. In some embodiments of the present invention, the various modified ELR materials 1060 can be formed into nanowires having a width and / or depth of 30 nanometers. In some embodiments of the present invention, the various modified ELR materials 1060 can be formed into nanowires having a width and / or depth of 20 nanometers. In some embodiments of the invention, various modified ELR materials 1060 can be formed into nanowires having a width and / or depth of 10 nanometers. In some embodiments of the present invention, the various modified ELR materials 1060 can be formed into nanowires having a width and / or depth of 5 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of 40 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of 30 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of 20 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of 10 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of 5 nanometers. In some embodiments of the present invention, various new ELR materials designed as described above can be formed into nanowires having a width and / or depth of less than 5 nanometers.

In some embodiments of the invention, the nanowires may be stacked on top of each other with a buffer layer and / or a substrate layer disposed therebetween to form stacked nanowires. Each nanowire disposed in each layer can be formed from a new or modified ELR material 1060 as described above and can have the width and / or depth described above.

In some embodiments of the invention, nanowires can be used to carry charge from the first end to the second end. Each of these ends is a separate nanowire, wire, trace, lead, wiring, electronics, electronic circuit, semiconductor element, transistor, memoryizer, resistor, capacitor, inductor, MEM device, pad, voltage source, current source May be connected to electrical components including, but not limited to, ground, or other electrical components. In some embodiments of the present invention, the nanowire can be connected or directly coupled to one or more electrical components via the nanowire ELR material.
In some embodiments of the present invention, the nanowires are connected to these electrical components via another type of ELR material (ie, modified, unmodified ELR material, same family or class of ELR materials). Can be bound indirectly. In some embodiments of the present invention, the nanowires may be indirectly coupled to these electrical components via a conductive material including a conductive metal, but are not limited thereto.

FIG. 37-A shows a cross-section of an exemplary ELR material 3700 that is parallel to the c-plane of the opening 3710 formed in the ELR material 3700 of various embodiments of the present invention and passes through the center of the opening 3710. In the following description, an ELR material 3700 according to an embodiment of the present invention is a conventional ELR material (eg, unmodified superconducting material and / or HTS material (ie, unmodified YBCO, etc.)), variously modified ELR
Material 1060 and novel ELR material, various embodiments described above. FIG. 37-A shows various openings 3710 through ELR material 3700 including an a-axis opening 3710A, a b-axis opening 3710B, and an ab-axis opening 3710C. a-axis opening 3710A is an opening 3710 through ELR material 3700 that is substantially parallel to the a-axis, and b-axis opening 3710B is an opening 3710 through ELR material 3700 that is substantially parallel to the b-axis, ab The axial opening 3710C is an opening 3710 through the ELR material 3700 that is substantially parallel to the c-plane axis that is offset from the a-axis (or b-axis) at an angle such as the angle 3720, for example. As will be appreciated, not all apertures 3710 through ELR material 3700 are shown in FIG. 37-A, but many are not shown for clarity and ease of explanation.

As can be appreciated, the opening 3710 depends on the crystal structure of the ELR material 3700. For example, as shown in the figure and shown at 37-A, the ab axis opening 3710C of ELR material 3700 (YBCO in this example) exists at an angle of +/− 45 ° from the a axis. As a further example, FIG. 38-A shows b-axis opening 3710B in ELR material 3700 relative to ab-axis opening 3710C in exemplary ELR material 3700. As will be appreciated, other ab axis openings 3710C include additional ab axis openings 3710C at other angles (eg, +/- 30 degrees, +/- 60 degrees, etc.),
It can be present in other ELR materials. Similarly, the a-axis opening 3710A and the b-axis opening 3710B are shown in FIG.
In 7-A, the ELR material 3700 is shown as being orthogonal to each other, but such openings 3700
It can be seen that other orientations exist depending on the crystal structure of other ELR materials.

Conventional superconducting materials, including HTS materials, typically exhibit various phenomena associated with such superconducting materials. As will be appreciated, in addition to very low resistance, these superconducting materials exhibit a Meissner effect that manifests as an apparent lack or expulsion of the electromagnetic field inside the superconducting material.
The Meissner effect is believed to be the result of eddy or loop currents formed within the superconducting material. These vortices are believed to generate a magnetic field within the superconducting material as a whole that cancels each other, thereby creating an apparent lack or expulsion of the internal electromagnetic field. Controlling (or removing) these vortices may control (or eliminate) the Meissner effect exhibited by the superconducting material. In other words, controlling (or removing) these vortices can prevent net elimination of the magnetic field in the interior of the superconducting material.

The eddy is E when the current "loops back" to itself in ELR material 3700 (creating a closed circuit)
It is believed that it is formed in LR material 3700 This means that the current path 3730 (Figure 37-A shows the current path
3730A, current path 3730B, current path 3730C, current path 3730D, and current path 3730E). As shown, when current flows through ELR material 3700, current can travel along current path 3730A through opening 3710A. Current ELR material 3
Opening 371 until reaching the intersection between various openings 3710A in 700, i.e., intersection 3740A
You can proceed through 0A.

At intersection 3740, it is generally believed that current can divert from a “straight” path of current in one opening 3710 to another path through a different opening 3710. For example, upon reaching intersection 3740A, the current may continue to pass through opening 3710A along current path 3730A, or deviate from current path 3730A, such as through opening 3710B along current path 3730B. May be. As shown, the current is offset by 45 degrees from the original path of current path 3730A to current path 3730B.

After the current has diverted from current path 3730A to current path 3730B, the current travels along opening 3710C along current path 3730B to intersection 3740B. Again, the current may continue to flow through the opening 3710C along the current path 3710, or may deviate from the current path 3730B, such as through the opening 3730B along the current path 3730C. As shown, the current is 90 degrees (2
Are offset by a total of 45 degrees of deflection). This process is such that the current is such an intersection 3740
You may continue to reach other intersections such as C and intersection 3740D. At intersection 3740C, the current deviates from current path 3730D through opening 3710C to current path 3730C through opening 3710B, and the intersection
At 3740D, the current may deviate from current path 3730E through opening 371OA to current path 3730D through opening 3710C. As shown, in current path 3730E, the current is 180 degrees from the original path (4
A total of 45 degrees deflection). Although not shown, as will be appreciated, this process can continue until the current creates a closed circuit along current path 3730A.

Figure 37-A shows the threshold depth of ELR material 3700 required for the current loop that forms in ELR material 3700 (shown in Figure 39-A, depth is relative to the a-axis) Indicates that it may be. More specifically, sufficient ELR material 37 to include five adjacent openings 3710B, as shown in FIG. 37-A.
A depth of 00 may be necessary for the current loop to form in ELR material 3700. In other words, if this number of openings 3710B is less than this, enough deflection (or rotation) and subsequent current path to create its own closed circuit within this threshold depth of ELR material 3700 May not provide. If the depth of the ELR material 3700 is less than this threshold depth, no loop current will occur in the LR material 3700, which may prevent the Meissner effect from occurring. Similarly, Figure 37-A shows the threshold length of ELR material 3700 required for the current loop formed in ELR material 3700 (the length is relative to the b-axis, as shown in Figure 39-A). Indicates that there may be. More specifically, as deduced from FIG. 37-A, the length of ELR material 3700 required to sufficiently include five adjacent openings 3710B forms a current loop in ELR material 3700. May be necessary. If the length of the ELR material 3700 is shorter than this threshold length, no loop current will be formed in the ELR material 3700, thereby preventing the occurrence of the Meissner effect. These threshold depths and / or lengths can be found in other ELRs with crystal structures other than those shown in FIG. 37-A, more or fewer openings, differently oriented openings, and different misaligned angle openings. May differ for material.

Furthermore, the depth and / or length of these thresholds assumes that the current may deviate in one turn at each intersection 3740. In other words, the current is + /
It is estimated in the example that it deflects only in units of -45 degrees (different from 90 degrees or more). As can be seen, the threshold of ELR material 3700 where the Meissner effect (or other superconducting phenomenon) does not occur when a larger unit of deflection occurs or when deflection occurs outside of intersection 3740 The depth and / or threshold length may be smaller. Similarly, the threshold depth of ELR material 3700, and / or when the Meissner effect (or other superconducting phenomenon) does not occur if it occurs only at intersection 3740 with deflection (and not all intersection 3740) The threshold length may be smaller. Nevertheless, according to various embodiments of the present invention, the ELR material 3700 has a threshold depth and / or a threshold length required to form a loop current.

In accordance with various embodiments of the present invention, using ELR materials and controlling one or more dimensional parameters of the nanowire, it exhibits very low resistance, but other superconducting phenomena (eg, Meissner effect) ) Can be formed. For example, according to various embodiments of the present invention, the nanowire depth is selected to be less than the threshold depth of the ELR material required to form a loop current in the ELR material. According to various embodiments of the present invention, the length of the nanowire is selected to be less than the threshold length of the ELR material required to form a loop current in the ELR material. According to various embodiments of the present invention, the depth and length of the nanowires may be less than their threshold of ELR material required to form a loop current in the ELR material. Thus, these nanowires may appear as perfect conductors along their depth and / or length without exhibiting other superconducting phenomena. In other words, according to various embodiments of the present invention, nanowires have a threshold depth within the range where nanowires operate as full conductors and beyond the range where nanowires operate as superconductors. Or threshold length (and in some embodiments, some EL
R material, possibly having a threshold width). While the threshold depth and / or threshold length of ELR material 3700 has been described above, in some examples, the loop current requires the threshold area of ELR material 3700 to actually form. This may be seen from Figure 37-A.

For purposes of this description, as will be understood, these thresholds are expressed in terms of the number of adjacent openings 3710 along a given dimension, the number of unit crystals, or other ELR material 3700 crystal structures. be able to. Also, as will be appreciated, these thresholds may be expressed in units of measurement (nanometers, angstroms, etc.).

In accordance with various embodiments of the present invention, nanowires that operate as a perfect conductor can have any length of ELR material 3700 provided that its depth does not exceed a threshold depth, as described above. Can be formed. Similarly, according to various embodiments of the present invention, a nanowire operating as a perfect conductor can have any length of ELR material 3700 provided such that its length does not exceed a threshold length, as described above. It can be formed in depth. More specifically, according to some embodiments of the present invention, nanowires that operate as perfect conductors and do not exhibit the Meissner effect, as described above, have a depth that does not exceed a threshold depth. The ELR material 3700A provided can be formed with any length. Similarly, according to some embodiments of the present invention, nanowires that operate as perfect conductors and do not exhibit the Meissner effect were provided such that their length does not exceed a threshold length, as described above. The ELR material 3700 can be formed at any depth.

As will be appreciated, changing the orientation of the ELR material in FIGS. 39A-A changes the appropriate threshold magnitude required for the Meissner effect to occur. For example, as understood, ELR
If the material is oriented so that the a-axis and c-axis are interchanged (ie, the depth is relative to the c-axis and the width is relative to the a-axis), the width and / or length is the Meissner effect. This is a dimensional parameter to be controlled in order to avoid it.

As mentioned above, nanowires can be used in traditional ELR materials (eg, unmodified YBCO, etc.), modified ELR materials (eg, ELR material 1060, chrome modified YBCO, etc.), new ELR
The material may be formed from ELR material 3700, which may include other ELR materials. Further, in some embodiments of the invention, the nanowires are on a substrate or cushioning material, as will be appreciated.
It can be formed by depositing ELR material 3700. In some embodiments of the invention, nanowires can be formed by securing ELR material 3700 on a substrate, such as a circuit board, as will be appreciated.

In some embodiments of the invention that utilize a modified ELR material (eg, a modified ELR material 1060), the nanowire has an opening 310 maintained at a temperature where only a portion of the modified ELR material 1060 is present. This portion of the ELR material 1060 having and modified may be formed to have a depth that does not exceed a threshold depth capable of forming a loop current and may operate above a certain temperature. For example, referring to FIG. 23, the modified ELR material 1060 can be operated at a temperature at which the openings 3100A and 310B are maintained. In this example, the openings 310A and 310B form a loop current in the modified ELR material 1060, but no Meissner effect occurs.
It may not be enough depth of the modified ELR material 1060.

According to various embodiments of the present invention, nanowires can be used to form various electrical components including, but not limited to, nanowire connectors, nanowire profiles, nanowire coils, and nanowire transducers. is not. FIG. 40-A shows an example of a nanowire connector 4000 according to various embodiments of the present invention. More specifically, FIGS. 40A-A show a nanowire connector 4000A formed from a nanowire comprising ELR material oriented in a manner similar to the nanowire of FIG. 39-A as described above. Here, the depth of the nanowire is less than the threshold depth required to form a loop current in the current ELR material. 40B-A shows the a-axis and c
Included is a nanowire connector 4000B formed from nanowires comprising ELR material oriented in such a way that the axes are interchanged with the a-axis and c-axis of FIG. 39-A. Here, the width of the nanowire is smaller than the threshold width required to form a loop current in the ELR material. As will be appreciated, other nanowire connectors 4000 can be formed from nanowires comprising differently oriented ELR materials.
In some embodiments of the invention, nanowire connector 4000 includes a nanowire that is a perfect conductor but does not exhibit all the properties of a superconductor. In some embodiments of the present invention, the nanowire connector 4000 includes a nanowire that is a perfect conductor that does not exhibit the Meissner effect. In some embodiments of the present invention, the nanowire connector 4000 is a conventional HTS with controlled dimensional parameters such that the nanowire operates as a perfect conductor but does not exhibit the Meissner effect.
Includes nanowires formed from materials. In some embodiments of the present invention, the nanowire connector 4000 is a nanowire formed from a modified ELR material 1060 having controlled dimensional parameters such that the nanowire operates as a perfect conductor but does not exhibit the Meissner effect. including. In some embodiments of the present invention, the nanowire connector 4000 includes nanowires formed from new ELR materials with controlled dimensional parameters such that the nanowire operates as a perfect conductor but does not exhibit the Meissner effect. As will be appreciated, the nanowire connector 4000 can be used to connect one electrical component to another electrical component (not shown).

FIG. 41-A shows various single nanowire profiles 4100 that can be formed from nanowires or segments of nanowires of some embodiments of the present invention. In some embodiments of the present invention, nanowire contour 4100A includes three nanowire segments 4110: nanowire segment 4110A, nanowire segment 4110B, and nanowire segment 4110.
Includes C. In some embodiments of the invention, the nanowire contour 4100B has four segments:
That is, it includes nano 4110, nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, and nanowire segment 4110D. In some embodiments of the present invention, the nanowire contour 4100C has five segments 4110, namely nanowire segments.
4110A, nanowire segment 4110B, nanowire segment 4110C, nanowire segment 4110D, and nanowire segment 4110E. The nanowire outline 4100C differs from the nano outline 4100B depending on the position of the pair of outline terminals. As will be appreciated, other locations of the contour terminal may be used in these or other nanowire contours 4100. In some embodiments of the present invention, nanowire contour 4100D includes N nanowire segment 4110, namely nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C,
And nanowire segment 4110N. In some embodiments of the present invention, each nanowire segment 4110 of the nanowire profile 4100 may be directly bonded to each other via a nanowire ELR material. In some embodiments of the present invention, individual nanowire segments 4110 may be indirectly coupled to each other via a conductive metal including a conductive material, but are not limited thereto. Leads to the nanowire contour 4100 (not shown) may or may not be formed from nanowires. As will be appreciated, the nanowire profile 4100 can be used in a variety of applications and may be formed in a variety of shapes and sizes depending on such applications. For example, as will be appreciated, the nanowires 4100 can be used to form so-called “current loops” that have a variety of uses, including detecting and / or generating electric fields.

FIG. 42-A illustrates one or more individual nanowire profiles 410 of some embodiments of the invention.
An exemplary nanowire coil 4200 that may be formed from zero is shown. Individual nanowire contour 4
100 may be separated from each other by a substrate or a buffer material, and may be coupled to each other by a coupler 4210, for example. As shown, the nanowire coil 4200 includes nanowire contour 4100V, nanowire contour 4100W, nanowire contour 4100X, nanowire contour 4100Y, and nanowire contour 4100Z.
Formed from. Although shown in FIG. 42-A as including five nanowire contours 4100, as will be appreciated, the nanowire coil 4200 may include any number of nanowire contours 4100. Also, as shown in FIG. 42-A, the nanowire coil 4200 includes a nanowire contour 41.
It may be configured to conduct current through 00 in the same general direction (eg, clockwise or counterclockwise). As will be appreciated, the nanowire coil 4200 can be used in a variety of applications and can be formed in a variety of shapes and sizes depending on such applications.

FIG. 43-A shows a differential nanowire coil 4300 that can be formed from one or more pairs of nanowire profiles 4100, according to various embodiments of the present invention. As shown in FIG. 43-A, the nanowire coil 4300 is formed from two pairs of nanowire contours. The first pair includes a nano contour 4100P and a nano wire contour 4100Q, and the second pair includes a nano wire contour 4100R and a nano wire contour 4100S. Although shown in FIG. 43-A as including two sets of nanowire profiles 4100, any number of pairs may be used in various embodiments of the invention. Further, in some embodiments of the present invention, as will be appreciated, the nanowire coil 4300 may include a single nanowire profile 4100 in addition to one or more nanowire profiles 4100. Nanowire contour
The nanowire contours 4100 in each pair of 4100 are coupled (eg, by a coupler 4210) to conduct current in different directions. For example, as shown in FIG. 43-A, the nanowire contour 4100P conducts current in a different direction than the nanocontour 4100Q (ie, one conducts current in a clockwise direction while the other conducts current in a counterclockwise direction. ). Same thing with nanowire contour 4100R
This also applies to the nano contour 4100S. As will be appreciated, the nanowire coil 4300 can be used in a variety of applications, for example, can be formed in a variety of shapes and sizes depending on such applications.

FIG. 44-A illustrates one or more concentric nanowire profiles 410 according to various embodiments of the invention.
A nanowire coil 4400 that can be formed from zero is shown. As shown in Figure 44-A,
Nanowire coil 4400 is formed from five nanowire contours 4100 including nanowire contour 4100J, nanocontour 4100K, nanocontour 4100-L, nanowire contour 4100-M, and nanocontour N. Figure
Although 44-A is described as including five nanowire contours 4100, any number of nanowire contours 4100 may be used in some embodiments of the invention. As shown in FIG. 44-A, the nanowire contours 4100 are concentric with each other and the size of the continuous nanowire contours 4100 decreases. For example, nanocontour 4100K fits within nanocontour 4100J but is smaller than nanocontour 4100J. Similarly, nanowire contour 4100M fits within nanocontour 4100L, but nanocontour 4100
Smaller than L. Similarly, nanowire contour 4100N fits within nanocontour 4100M, but is smaller than nanocontour 4100M. As shown in FIG. 44-A, nanowire contours 4100 are coupled together to form, for example, a “spiral” nanowire coil 4400. As understood,
The nanowire coil 4400 can be used in a variety of applications and can be formed in a variety of shapes and sizes. Nanowire coil 4200 and nanowire coil 4300 can be considered essentially three-dimensional (ie, each nanowire contour 4100 is “stacked” on top of each other), whereas nanowire coil 4400 is essentially two-dimensional ( In other words, it is not a stack of nanowire contours 4100).

45A-A and 45B-A illustrate various nanowire converters according to various embodiments of the present invention that can be used to convert energy from one form of energy to another.
4500 is shown. For example, a nanowire converter 4500A that includes at least two nanowire segments 4110 configured as a dipole can be used to convert electromagnetic radiation to an alternating voltage (eg, Vrms) that appears across its terminals. In this mode, the nanowire transducer
The 4500A can be considered a receiver (ie, receiving or responding to electromagnetic radiation). Conversely, the nanowire converter 4500A can be used to convert alternating voltage appearing across the terminals into electromagnetic radiation. In this mode, the nanowire transducer 4500A can be considered a transmitter (ie, transmitting electromagnetic radiation or propagating electromagnetic radiation).

As another example, a nanowire transducer 4500B that includes a nanowire profile 4100 (which can also be considered a nanowire coil 4100) can be used to detect a changing current carried by a conductor 4510. More specifically, the current carried by conductor 4510 generates an electromagnetic field and then generates a current through the terminals of nanowire transducer 4500B according to well-known physics principles. Conversely, the current change applied to the terminals of the nanowire converter 4500B is the conductor 451
Can be used to induce current in zero. The changing current through the terminals of the nanowire transducer 4500B induces an electromagnetic field and then induces a current in the conductor 4510.

As yet another example, a nanowire transducer 4500C that includes a nanowire coil 4200 is a conductor 451
Can be used to detect changing current carried by zero. More specifically, the current carried by conductor 4510 generates an electromagnetic field that in turn generates current through the terminals of nanowire transducer 4500C according to well-known physics principles. Conversely, current changes applied to the terminals of nanowire transducer 4500C can be used to induce current in conductor 4510. Again, the changing current through the terminals of the nanowire transducer 4500C induces an electromagnetic field in the loop of the nanowire transducer 4500C and then induces a current in the conductor 4510.

As a further example, a nanowire transducer 4500D that includes a nanowire coil 4400 is a conductor 4510
It can be used to detect the current as it changes to be carried by. More specifically, the current carried by conductor 4510 generates an electromagnetic field and then generates a current through the terminals of nanowire transducer 4500D according to well-known physics principles. Conversely, the current change applied to the terminals of the nanowire transducer 4500D can be used to induce a current in the conductor 4510. Again, the changing current through the terminals of the nanowire transducer 4500D induces an electromagnetic field in the loop of the nanowire transducer 4500C and then induces a current in the conductor 4510.

As will be appreciated, the conductor 4510 is in the embodiment of the invention described above with reference to FIG.
Not necessary. Indeed, the changing electromagnetic field present in the “loop” of nanowire transducer 4500 from conductor 4510 or otherwise produces a current through the terminals of nanowire transducer 4500. Similarly, a changing current through the terminals of the nanowire transducer 4500 creates an electromagnetic field in the loop of the nanowire transducer 4500. Also, as will be appreciated, the “changing electromagnetic field” referred to above is a change in the electromagnetic field in the loop of the nanowire transducer 4500 or the nanowire transducer 450.
This may occur as a result of the zero position changing with respect to the electromagnetic field and / or a change in the current carried by the conductor 4510.

In some examples, a nanowire comprising a modified ELR material can be described as follows.

  Nanowires containing modified ELR materials.

A nanowire comprising a plurality of layers of modified ELR material, each layer of the plurality of layers of ELR material being separated from another layer of the plurality of layers by a buffer or substrate material Nanowire.

An electrical system comprising a first nanowire comprising a modified ELR material and a second nanowire comprising a non-ELR material, wherein the first nanowire is coupled to the second nanowire. .

An ELR nanowire comprising an ELR material having three-dimensional parameters including length, width, depth, wherein at least one of the three-dimensional parameters is such that the ELR nanowire operates at a very low resistance, An ELR nanowire characterized by being below a threshold not exhibiting one superconducting phenomenon.

An ELR nanowire comprising: an ELR material having three-dimensional parameters including length, width, depth; and a modifying material disposed on a suitable surface of the ELR material, wherein at least one of the three-dimensional parameters For one, the ELR nanowire operates at a very low resistance, but at least 1
ELR nanowires that are lower than a threshold that does not show one superconductivity phenomenon.

An ELR nanowire contour comprising at least one ELR nanowire segment, wherein each ELR
The nanowire segment includes an ELR material having three-dimensional parameters including length, width, and depth, at least one of the three-dimensional parameters is at least that the ELR nanowire segment operates with a very low resistance, An ELR nanowire contour characterized by being below a threshold that does not exhibit one superconducting phenomenon.

An ELR nanowire contour comprising a plurality of ELR nanowire segments, each of the plurality of ELR nanowire segments being modified with three-dimensional parameters including length, width, depth, and disposed on an appropriate surface of the ELR material An ELR nanowire segment comprising:
At least one of the three-dimensional parameters is lower than a threshold such that the ELR nanowire segment operates at a very low resistance but does not exhibit at least one superconducting phenomenon. ELR nanowire contour.

An ELR coil comprising at least one ELR nanowire contour, wherein the at least one ELR
Each of the nanowire profiles includes a plurality of ELR nanowire segments, and each of the plurality of ELR nanowire segments is coupled to at least another of the plurality of ELR nanowire segments to form a substantially polygon. At least one of the plurality of ELR nanowire segments has a three-dimensional parameter including length, width, depth
Including at least one of the three-dimensional parameters, wherein the ELR nanowire segment operates at a very low resistance, but is below a threshold that does not exhibit at least one superconducting phenomenon. Characteristic ELR coil.

An ELR coil comprising a plurality of ELR nanowire profiles, each of the plurality of ELR nanowire profiles comprising a plurality of ELR nanowire segments, wherein each of the plurality of ELR nanowire segments substantially forms a polygon. Coupled to at least another of the plurality of ELR nanowire segments, each of the plurality of ELR nanowire segments having an ELR material having a three-dimensional parameter including length, width, and depth; and A modifying material disposed on a suitable surface and a modifying material disposed on a suitable surface of the ELR material, wherein at least one of the three-dimensional parameters is that the ELR nanowire segment is highly An ELR coil that operates at a very low resistance but is below a threshold that does not exhibit at least one superconducting phenomenon. Le.

A nanowire transducer comprising at least one segment of nanowires, characterized in that it detects an electromagnetic field or induces an electromagnetic field.

A nanowire transducer having at least one nanowire segment disposed in an electromagnetic field, wherein the nanowire transducer detects an electromagnetic field or converts an electromagnetic field into an alternating voltage.

A nanowire converter having at least one nanowire segment electrically coupled to an alternating voltage source, the nanowire converter inducing an electromagnetic field in response to the alternating voltage source.

Chapter 2 Josephson Junction Formed from ELR Material For the description of this chapter, refer to FIGS. 1 to 36 and FIGS. 37-A to 46-J. Accordingly, all reference numbers included in this chapter refer to the components used in these figures.

46A-A to 46H-A show various Josephson junctions 4600 according to one or more embodiments of the present invention (in FIG. 46A-A, Josephson junction 4600A, in FIG. 46B-A, Josephson junction 4600A). 46C-A as Josephson junction 4600C, FIG. 46D-A as Josephson junction 4600D, FIG. 46E-A as Josephson junction 4600E, FIG. 46F-A as Josephson junction 4600F, FIG. 46G-A is shown as Josephson junction 4600G, and FIG. 46H-A is shown as Josephson junction 4600H). 46A-A shows two ELR conductors 4 separated by a barrier 4610.
A Josephson junction 4600A including 620 is shown. In some embodiments of the present invention, each ELR conductor 462
0 includes ELR materials that operate with improved operating characteristics, according to various embodiments of the present invention. For example, in some embodiments of the present invention, each ELR conductor 4620 includes a modified ELR material 1060 with improved operating characteristics, and in some embodiments of the present invention, each ELR conductor 4620 includes: Includes new ELR materials with improved operating characteristics. In some embodiments of the present invention, each ELR conductor 4620 comprises a nanowire segment 4110 according to various embodiments of the present invention.

In some embodiments of the invention, the barrier 4610 is disposed between the ELR conductors 4620 and the ELR conductors
Insulating material electrically coupled to 4620. In these examples, it will be appreciated that the barrier 4610 is very thin, typically 30 angstroms or less. In some embodiments of the present invention, barrier 4610 includes a conductive material, such as a conductive metal, disposed between ELR conductor 4620. In some embodiments of the present invention, the barrier 4610 includes a conductive material, such as a ferromagnetic metal, disposed between the ELR conductor 4620. In these examples, it is understood that the barrier 4610 may be thicker than the insulating material and typically has a thickness of a few microns. In some embodiments of the present invention, the barrier 4610 includes a semiconductive material, such as a conductive metal, disposed between the ELR conductor 4620. In some embodiments of the present invention, the barrier 4610 may be made of other materials (i.e., different chemical composition, different crystal structure, different crystal structure orientation, different phase, different, such as an ELR material different from that of the ELR conductor 4620). Including, but not limited to, grain boundaries, different critical currents, different critical temperatures, etc.). In some embodiments of the present invention, the barrier 4610 comprises the same ELR material as that of the ELR conductor 4620, but has one or more different mechanical aspects (ie, the thickness of the ELR conductor 4620 and Different ELR material thickness, ELR conductor 4620 width and different ELR conductor 4620 width, or other mechanical differences). In some embodiments, the barrier 4610 includes a partial or complete air gap formed between the ELR conductor 4620. In these examples, the barrier 4610 may include a void filled with air or other gas. In some embodiments of the invention in which the ELR conductor 4620 includes a modified ELR material 1020, the barrier 4610 may include an unmodified ELR material 360.

Common types of conventional Josephson junctions are superconductor-insulator-superconductor ("SIS"), superconductor-normal conductor-superconductor ("SNS"), superconductor-iron strong Magnetic metal superconductor ("SFS"), superconductor-insulator-normal conductor-insulator-superconductor ("SINIS"), superconductor-insulator-normal conductor-superconductor ("SINS") ), Superconductor-Construction-Superconductor ("SCS"), etc. 46I-A shows Josephson junctions including tunnel junctions (SIS), point contacts, Daydem bridges (SCS), sandwich junctions, bridges of various thicknesses, and ion-implanted bridges (left to right, top to bottom). Although various examples are shown, it is not limited to these. 46J-A shows other examples of Josephson junctions including step edge SNS junction, step edge grain boundary junction, ramp edge junction, both grain boundary junctions (left to right, top to bottom) It is not limited to. According to various embodiments of the present invention, any of the above types of Josephson junctions are constructed using an improved ELR material as described above, instead of the conventional Josephson junction superconducting material. be able to.

Generally speaking, the Josephson junction 4600 exhibits a so-called Josephson effect. Here, the current flowing through the ELR conductor 4620 in the ELR state is also the ELR conductor 462 in a very low resistance state.
Can flow across the junction between zero. Josephson junctions, for example, barrier 461
0 may be provided. The current flowing through the barrier 4610 is referred to as the Josephson current. Until the critical current is reached, the Josephson current can flow through the barrier 4610 with very low resistance. However, when the critical current of the barrier 4610 is exceeded, a voltage appears across the barrier 4610,
This voltage then further reduces the critical current, thereby generating a large voltage across the barrier 4610. The Josephson effect may be utilized at the Josephson junction 4600 in various circuits, as will be appreciated.

46A-A show various examples of “wire configurations” Josephson junction 4600, including bulk material conductors, wires, nanowires, traces, and other configurations, as will be appreciated. However, it is not limited to this.

46B-A shows a “foil configuration” or “plate structure” Josephson junction 4600B and, as will be appreciated, bulk material plates, foils, or other, according to various embodiments of the present invention. Including, but not limited to, a stacked configuration. Josephson junction 4600B, for example, ELR conductor
It can be used to detect photons incident on any one of 4620. It will be appreciated that there are other uses for the Josephson junction 4600B.

46C-A and 46D-A show a so-called “wire configuration” Josephson junction 4600. FIG. Figure 46
CA includes modified ELR materials that exhibit improved operating characteristics according to various embodiments of the invention
A Josephson junction 4600C including an ELR conductor 4620 is shown. As shown in FIG. 46C-A, in some embodiments of the present invention, each ELR conductor 4620 of Josephson junction 4600C includes a modified ELR material that includes a modifying material 2720 stacked on an ELR material 3110. Including. In some embodiments of the invention, the modified ELR material may be laminated onto the substrate 2420 (ie, the ELR material is
Layered on top). The ELR conductor 4620 may include other forms of modified ELR material, as will be appreciated. As shown, the barrier 4610 is disposed between the ELR conductors 4620 and is electrically coupled to the ELR conductors 4620.

46D-A shows a modified E with improved operating characteristics according to some embodiments of the present invention.
FIG. 18 shows a Josephson junction 4600D including an ELR conductor 4620 including LR material. As shown in FIG. 46D-A, in some embodiments of the present invention, each ELR conductor 4620 of Josephson junction 4600D is an EL
Including modified ELR material including modifying material 2720 laminated on R material 3110. In some embodiments of the invention, the modified ELR material may be laminated onto the substrate 2420 (ie, the ELR material is laminated onto the substrate 2420). As can be seen, ELR conductor 4620 is a modified EL
Other forms of R material may be included. As shown, the barrier 4610 is disposed between the ELR conductors 4620 and is electrically coupled to the ELR conductor 4620. More specifically, barrier 4610 is made of ELR material 31.
Arranged between 10 layers, placed under a continuous layer of material 2720 to change. As will be appreciated, the Josephson junction 4600D may be preferred over the Josephson junction 4600C, for example, from a manufacturing perspective. In some embodiments of the invention as shown in FIGS. 46C-A and 46D-A, the barrier 4610 can include, but is not limited to, a material that changes.

FIGS. 46E-A illustrate a Josephson junction 4600E that includes an ELR conductor 4620 that includes a modified ELR material with improved operational characteristics according to various embodiments of the present invention. As shown in FIGS. 46E-A, in some embodiments of the present invention, each ELR conductor 4620 of the Josephson junction 4600E includes a modified ELR material that includes a modifying material 2720 laminated on an ELR material 3110. Including. As shown in FIG. 46E-A, the barrier 4610 breaks into a layer of material 2720 that changes over the continuous layer of ELR material 3110 (
For example, a gap is formed. As will be appreciated, such gaps in the modifying material 2720 can be formed by various processing techniques including etching, milling, shadow masks, or other processing techniques. Therefore, Josephson junction 4600E
Is formed from two ELR conductors 4620 containing modified ELR material (eg, ELR material 3110
2720 layers of material to change on the layer of). This modified ELR material is a barrier that includes a layer of ELR material 3110 that is not provided with material 2720 to be modified (ie, a layer of ELR material 3110 that has not been modified).
Separated by 4610. As will be appreciated, the Josephson junction 4600E is, for example,
From a manufacturing point of view, it may be preferable to other Josephson junctions.

46F-A shows a Josephson junction 4600F including an ELR conductor 4620 that includes a modified ELR material with improved operational characteristics according to various embodiments of the present invention. As shown in FIG. 46F-A, in some embodiments of the present invention, each ELR conductor 4620 of Josephson junction 4600F includes a modified ELR material that includes a modifying material 2720 laminated on an ELR material 3110. including. Similar to Josephson junction 4600E, barrier 4610 of Josephson junction 4600F is formed by a gap in the layer of changing material 2720 above the continuous layer of ELR material 3110. As a result, the Josephson junction 4600F is also separated by a barrier 4610 that includes the unmodified ELR material 3110,
Formed from two ELR conductors 4620 containing modified ELR material. In some embodiments of the present invention, an insulating or cushioning layer 4630 may be laminated over the material 2720 to be modified, and FIG.
As shown in A, the insulating or cushioning layer 4630 may fill a gap in the layer of material 2720 to be modified, thereby providing an additional barrier 4610 embodiment.

46G-A shows a modified E with improved operating characteristics according to some embodiments of the present invention.
FIG. 18 shows a Josephson junction 4600G including an ELR conductor 4620 including LR material. As shown in FIG. 46G-A, in some embodiments of the present invention, each ELR conductor 4620 of the Josephson junction 4600G is an EL
Including modified ELR material including modifying material 2720 laminated on R material 3110. Similar to Josephson junctions 4600E and 4600F, the Josephson junction barrier 46010 is formed by a gap in the layer of material 2720 that changes over the layer of ELR material 3110. Also Josephson junction
The 4600G barrier 4610 also includes partial gaps (ie, mechanical depth and thickness shrinkage) in the layer of ELR material 3110. The processing technique used to create the gap in the layer of material 2720 to be modified can create a partial gap under the layer of ELR material 3110, intentionally or unintentionally. As a result, Josephson Junction 4600G changed ELR
Formed from two ELR conductors 4620 containing material. This modified ELR material is separated by a barrier 4610 that includes an unmodified ELR material 3110 with further mechanical shrinkage. In some embodiments of the present invention, the layer of insulating or cushioning material 4630 is a material that changes
The layer 4630 of insulating or cushioning material may be laminated over the 2720 or as shown in FIG.
Fill the gap in the layer of material 2720 to change and the partial gap in the layer of ELR material 3110,
Thereby, a further embodiment for the barrier 4610 may be provided.

FIGS. 46H-A illustrate a Josephson junction 4600H including an ELR conductor 4620 that includes a modified ELR material with improved operational characteristics according to various embodiments of the present invention. As shown in FIG. Including. As described above, the barrier 4610 of the Josephson junction 4600H is formed by a gap in both the layer of material 2720 to be modified and the layer of ELR material 3110. As a result, Josephson junction 4600H is formed from two ELR conductors 4620 comprising modified ELR material separated by a gap. In some embodiments of the present invention, the insulating or cushioning layer 4630A may be laminated on top of the modifying material 2720, and as shown in FIG. The gap between both the layer of material 2720 to be modified and the layer of ELR material 3110 can be filled.

In some embodiments of the present invention, a plurality of Josephson junctions 4600, as will be understood,
It may be organized into a one-dimensional array of Josephson junctions 4600 coupled in series. In some embodiments of the present invention, the plurality of Josephson junctions 4600 includes a one-dimensional array of a plurality of Josephson junctions 4600 coupled in series, coupled in parallel to each other, as will be appreciated. It can be knitted into a two-dimensional array of Son junctions.

In some examples, a Josephson junction comprising a modified ELR material can be described as follows.

A first ELR conductor comprising an ELR material which is a Josephson junction and has improved operating characteristics;
A Josephson junction comprising: a second ELR conductor including the ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor.

A first ELR conductor including an ELR material having a critical temperature higher than 150K, a second ELR conductor including the ELR material, and a barrier disposed between the first ELR conductor and the second ELR conductor. A Josephson junction comprising a material.

A circuit including a plurality of Josephson junctions, each of the plurality of Josephson junctions,
A first ELR conductor including an ELR material having a critical temperature higher than 150K, and a second E including the ELR material.
A circuit comprising an LR conductor and a barrier material disposed between the first ELR conductor and the second ELR conductor.

A Josephson junction comprising a first ELR conductor including a modified ELR material, a second ELR conductor including the modified ELR material, and a barrier material disposed between the first ELR conductor and the second ELR conductor. A modified ELR material has a first layer of the ELR material and a second layer of the modifying material coupled to the ELR material of the first layer, the modified ELR material comprising: Josephson junction, characterized by having improved operating characteristics relative to the operating characteristics of ELR materials only.

A first ELR conductor comprising a modified ELR material, and a second ELR conductor comprising a modified ELR material;
A Josephson junction including a barrier material disposed between a first ELR conductor and a second ELR conductor, wherein the modified ELR material comprises a first layer of ELR material and the first layer of ELR material. A Josephson junction having a second layer of modifying material coupled to said modified ELR material having a critical temperature greater than 150K.

A circuit including a plurality of Joseph junctions, each of the plurality of Joseph junctions including a first ELR conductor including a modified ELR material, a second ELR conductor including the modified ELR material, and the first ELR conductor; A barrier material disposed between the second ELR conductor and the modified EL
The R material has a first layer of ELR material and a second layer of modifying material bonded to the first layer of ELR material, and the modified ELR material has a critical temperature higher than 150K. A circuit comprising:

A Josephson junction comprising a first layer of ELR material and a second layer of modifying material coupled on the first layer of ELR material, the second layer comprising a first portion, a second portion A modifying material having a portion and a gap formed between the first portion and the second portion and over the first layer of the ELR material and coupled to the first layer of the ELR material The first portion of the second layer of the modified E
Forming a first portion of LR material, wherein the gap in the second layer of the modifying material provides an unaltered portion of the ELR material, and the unaltered portion of the ELR material is the Josephson junction A Josephson junction that forms a barrier and wherein the modified ELR material has operational characteristics that are improved over the operational characteristics of the ELR material alone.

A Josephson junction comprising a first layer of ELR material and a second layer of modifying material coupled on the first layer of ELR material, the second layer comprising a first portion, a second portion The modification having a portion and a gap formed between the first portion and the second portion and on the first layer of the ELR material and coupled to the first layer of the ELR material The first part of the second layer of material is modified E
Forming a first portion of LR material, wherein the gap in the second layer of the modifying material provides an unaltered portion of the ELR material, and the unaltered portion of the ELR material is the Josephson junction A Josephson junction that forms a barrier and the modified ELR material operates in an ELR state at a temperature greater than 150K.

A circuit comprising a first layer of ELR material and a second layer of modifying material coupled over the first layer of ELR material, wherein the second layer comprises a plurality of portions of the modifying material A plurality of portions of modifying material having gaps formed between adjacent pairs of portions, each of the plurality of portions of modifying material forming a portion of modified ELR material First of the ELR material
The gap formed between each pair of adjacent portions of the plurality of portions of the material to be modified coupled to a layer provides an unaltered portion of the ELR material and the modified of the ELR material The part that does not form a Josephson junction barrier, the modified ELR material is 150K
A circuit that operates in an ELR state at higher temperatures.

A first ELR wire including an ELR material that is a Josephson junction and has a critical temperature higher than 150K, a second ELR wire including the ELR material, the first ELR wire, and the second ELR wire. A Josephson junction comprising a barrier material.

A first ELR foil that includes an ELR material that is a Josephson junction and has a critical temperature higher than 150K, a second ELR foil that includes the ELR material, the first ELR foil, and the second ELR foil. A Josephson junction comprising a barrier material.

Chapter 3 QUIDS (ELR quantum interference device) made of ELR material
For the description of this chapter, refer to FIGS. 1-36 and FIGS. 37-A to 53-A. Accordingly, all reference numbers included in this chapter refer to the components shown in the figures.

FIG. 47-A shows an ELR QUID 4700 (ie, ELR quantum interference device) that includes an ELR loop 4710 that includes a single ELR Josephson junction 4600 according to some embodiments of the present invention. More specifically, E
The LR loop 4710 includes an ELR conductor 4620 formed in a loop that includes a single barrier 4610 disposed within the leg of the loop to form an ELR Josephson junction 4600. The ELR QUID 4700 generally operates in a manner similar to other quantum interference devices including superconducting quantum interference elements or “SQUIDs”. The operation and use of SQUID is well known. As will be appreciated, the ELR QUID 4700 is sometimes referred to as a “single junction QUID”, “single junction QUID”, or “RFQUID”. "ELRQUID47
00 is formed from an ELR material that operates with improved operating characteristics according to some embodiments of the present invention. According to various embodiments of the present invention, ELR QUID 4700A includes a modified ELR material 1060 of some embodiments of the present invention. ELR QUID 4700A includes an apertured ELR material that has the improved operational characteristics of some embodiments of the present invention. ELR QUID4700A includes the new ELR material of some embodiments of the present invention.

Generally speaking, as will be appreciated, ELR QUID4700 is an ELR loop 4710 (ie ELR
It can be used to detect a magnetic field flowing through or perpendicular to the internal region formed by the loop 4710. More specifically, the ELR QUID 4700 can be coupled to an RF generator that induces current in the ELR loop 4710. Such an RF generator is
Sometimes referred to as an AC bias circuit 5000 and shown in FIG. 50-A. AC bias circuit 5000 is RF
Current AC 5020 flowing through inductor 5010 is utilized to generate an electric field and then induce current in ELR loop 4710 of ELR QUID 4700. In some embodiments of the present invention, ELR loop 47
Current in 10 (which can be controlled via current 5020 through inductor 5010) is ELR
The QUID4700 is kept at or slightly below the critical current of the barrier 4610 of the Josephson junction 4600. As will be appreciated, the magnetic field flowing through the inner region of the ELR loop 4710 exceeds the critical current of the barrier 4610, thereby producing a voltage across the barrier 4610 that can be detected and / or measured. , Causing current in the ELR loop 4710.

FIGS. 48A-A generally illustrate a dual feed ELR QUID4800, and more specifically, a dual feed ELR QUID4800A. ELR QUID 4800A is an ELR loop 4710 having a single ELR Josephson junction 4600 and two feeds 4810 (sometimes referred to as current input feed 4810A and output feed 4810 flowing through ELR QUID 4800A) according to some embodiments of the present invention. Indicates.
The two feeds 4810 are symmetrically arranged in the ELR loop 4710 so that the current flowing through each leg of the ELR loop 4710 is equal. Thus, the ELR loop 4710 is sometimes symmetrical
Called ELR loop.

The ELR loop 4710 of the QUID 4800A includes an ELR conductor 4620 formed in a loop with a single barrier 4610 disposed within the loop leg to form an ELR Josephson junction 4600. ELR Q
UIDs 4800 may be formed from ELR materials that operate with improved operating characteristics according to various embodiments of the present invention. For example, in some embodiments of the present invention, ELR QUID 4800 includes a modified ELR material 1060 according to some embodiments of the present invention, and in some embodiments of the present invention, ELR QUID 4800 includes In some embodiments of the invention, the ELR QUID 4800 includes a new ELR QUID4800 according to some embodiments of the invention, including an ELR material with openings having improved operating characteristics according to some embodiments of the invention. Includes ELR material.

FIGS. 48B-A illustrate a dual feed ELR QUID 4800B according to some implementations of the present invention. EL
R QUID4800B is offset from the center axis of the ELR loop 4710 so that the feed 4810 is located close to the ELR loop 4710 leg 4830 (including the barrier 4610) and is located far from the ELR loop 4710 leg 4820. Because it is different from ELRQUID4800A. Thus, the feed 4810
Arranged asymmetrically in ELR loop 4710. Although not shown, in various embodiments of the invention, feed 4810 may be offset from the central axis of ELR loop 4710 such that feed 4810 is positioned away from leg 4830 and closer to leg 4820. Good. Similarly, in some embodiments of the present invention (not shown), one feed is placed near leg 4820 and the other feed is leg 483.
It may be arranged far from zero. As will be appreciated, the position of the feed 4810 in the ELR loop 4710 may change the respective flow of current through the legs 4820, 4830 and may change the overall operation and / or sensitivity of the ELR QUID4800B. Thus, ELR QUID4800B ELR loop 4
710 is often referred to as an asymmetric ELR loop.

FIGS. 48C-A illustrate a dual feed ELR QUID4800C according to various embodiments of the present invention. ELR
QUID4800C has a larger leg 4840 than ELR loop 4710 leg 4850 (including barrier 4610)
R Different from QUID4800A. Thus, the legs 4840, 4850 show another asymmetry and the ELR loop
Available in 4710. Although not shown, in various embodiments of the present invention, legs 4850 are legs
It may be wider than 4840. As can be seen, the width of legs 4840, 4850 in ELR loop 4710 is
Each flow of current flowing through the legs 4840, 4850 may be changed to change the overall operation and / or sensitivity of the ELR QUID4800C. Thus, ELR QUID4800C ELR loop 4710
Is often referred to as an asymmetric ELR loop.

Generally speaking, the ELR QUID 4800 can be used as rapid single quantum flux ("RSQF") logic that can be used to generate a single pulse when the flux state of the ELR QUID 4800A changes. In other words, ELR QUID 4800 generates a single pulse when the field through the inner region formed by ELR loop 4710 changes. As will be appreciated, the pulses generated by ELR QUID 4800 typically have a relatively short pulse width.

FIGS. 49A-A generally illustrate a dual feed two Josephson junction ELR QUID4900, and more specifically, a dual feed two Josephson junction ELR QUID4900A. ELR QU
ID 4900A includes an ELR loop 4710 with two ELR Josephson junctions 4600 and two feeds 4810 according to various embodiments of the present invention. As shown, ELR QUID4900 has a symmetric loop 4710
including. The ELR QUID 4900A ELR loop 4710 includes an ELR conductor 4620 formed in a loop with two barriers 4610, each disposed within a loop leg to form an ELR Josephson junction 4600. ELR QUIDs 4900 may be formed from ELR materials that operate with improved operating characteristics, according to various embodiments of the present invention. For example, in some embodiments of the present invention, ELR QUID 4900 includes a modified ELR material 1060, and in some embodiments of the present invention, ELR QUID 4900 is an open ELR having improved operating characteristics. In some embodiments of the present invention, ELR QUID4900A includes new ELR materials according to various embodiments of the present invention.

49B-A shows dual Josephson Josephson junction ELs according to various embodiments of the present invention.
R Indicates QUID4900B. ELR QUID4900B feeds 481 as described above with reference to Figure 48B-A.
It has an asymmetric ELR loop 4710 that is offset from the central axis of the ELR loop 4710. Although not shown, in various embodiments of the present invention, the feed 4810 may be offset from the central axis of the ELR loop 4710 such that the feed 4810 is positioned far from the leg 4830 and close to the leg 4820. Similarly, in some embodiments of the present invention (not shown), one feed can be placed near leg 4820 and the other feed can be placed near leg 4830. As will be appreciated, the position of the feed 4810 in the ELR loop 4710 changes the current flow through each leg 4820, 4830, changes the overall behavior, and / or changes the sensitivity of the ELR QUID4900B Might do.

FIG. 49C-A shows a dual feed two Josephson junction ELR QUID4900C according to some embodiments of the present invention. ELR QUID4900C has legs 4840, 4 as described above with respect to FIG.
850 includes asymmetric ELR loops 4710 that are different sizes from each other. Although not shown, leg 4850 may be wider than leg 4840 in various embodiments of the invention. As will be appreciated, the width of the legs 4840, 4850 of the ELR loop 4710 changes each flow of current flowing through the legs 4840, 4850, changes the overall behavior, and / or changes the sensitivity of the QUID4900C Also good.

As can be seen, the ELR QUIDs 4900A in Figures 49A-A through 49C-A are two Josephson junctions.
Although shown as having 4600, ELR QUIDs 4900A can include three or more Josephson junctions 4600. Generally speaking, such ELR QUIDs 4900 can be thought of as a parallel array of Josephson junctions 4600 interconnected with ELR segments 5320 (described in detail below with reference to FIG. 53).

As will be appreciated, in general, ELR QUID 4900 can detect a magnetic field flowing through an internal region formed by ELR loop 4710. More specifically, ELR QUID4900
Can be used in the DC bias circuit 5100A as shown in FIG. 51-A. DC bias circuit 5100 utilizes DC current 5120 to provide a bias current through each leg of ELR loop 4710 of ELR QUID 4900. In this configuration, ELR QUID 4900 is sometimes referred to as DC QUID 4900. In various embodiments of the present invention, the bias current through the legs of the ELR loop 4710 is the ELR QUID4900
It is held at or below the critical current of the barrier 4610A of the Josephson junction 4600 in the middle. The magnetic field flowing through the inner region formed by the ELR loop 4710 is the ELR
A current is caused in loop 4710 to cause the critical current of barrier 4610A to be exceeded, thereby generating a voltage on barrier 4610 that can be detected and / or measured. As will be appreciated, ELR QUIDs 4900 are generally more sensitive to magnetic fields than, for example, ELR QUIDs 4700.

The configuration of the QUID 4900 according to various embodiments of the present invention is described below with reference to FIG. 53-A.
As will be appreciated, the following description may be applied to various embodiments of ELR QUIDs 4700, 4800. As shown in FIG. 53-A, the ELR QUID 4900 may be composed of a plurality of ELR segments 5320. Each ELR segment 5320 may comprise a structure similar to that of nanowire segment 4110. In some embodiments of the invention, the ELR segment 5320 has a large dimension,
In many cases, it may be substantially larger than the dimensions of the nanowire segment 4110.
In some embodiments of the present invention, ELR segment 5320 comprises nanowire segment 4110. In some embodiments of the present invention, ELR segment 5320 includes an ELR material as described above.

In some embodiments of the present invention, the ELR QUID 4900 can include a feed 4810 formed from an ELR material as described above. In some embodiments of the present invention, ELR QUID 4900 can include a feed 4810 formed from a different material than the ELR material. In some embodiments of the present invention, ELR QUID 4900 can include a feed 4810 formed from a conductive material. In some embodiments of the present invention, ELR QUID 4900 can include a feed 4810 formed from a conductive metal. In some embodiments of the present invention, ELR QUID 4900
One feed 4810 formed from one material and another feed 48 formed from another material
10A can be included.

In some embodiments of the present invention, as will be appreciated, various interfaces 5310 (interface 5310A, interface 5310B, interface 5310C, interface shown) may be connected between ELR segments 5320 to form an ELR loop 4710. (As will be appreciated, all interfaces 5310 in ELR loop 4710 are not shown for convenience). In accordance with various embodiments of the present invention, interface 5310 exhibits a transition between the crystal structure orientation of one ELR segment 5320 and the crystal structure orientation of another ELR segment 5320.

ELR QUIDs 4700, 4800, 4900 (referred to alternately below as ELR QUIDs) are found in many circuits and / or applications. For example, ELR QUIDs 4700 and ELR QUIDs 4
Both 900 can be used to create a very sensitive magnetic force (illustrated in FIG. 52-A and described below). As will be appreciated, depending on the sophistication of the applied bias (not shown), amplification and the feedback circuit, the magnetometer can be on the order of one billionth of the Earth's magnetic field (
10 ⁻¹⁰ ) so that it can be detected.

52A-A to 52C-A show various gradiometers 5200 according to various embodiments of the invention.
Indicates. In general, the gradiometer 5200 is a device that can measure a change or gradient of a magnetic field. As can be seen, Figure 52A-A is used to measure the magnetic field through the loop of loop circuit 5210A.
Gradiometer 5200A (also called magnetometer 5200A) using ELR QUID4700, 4900 is shown. As will be appreciated, the ELR QUID 4700, 4900 may be magnetically shielded.

As can be appreciated, FIGS. 52B-A show a gradiometer 5200B that uses an ELR QUID 4700 to measure the first derivative of the magnetic field through the loop of loop circuit 5210B. More specifically, the loop circuit
The two loops of 5210B are configured to be parallel and equal in size to each other, and are configured to be opposite so that the currents generated in each loop cancel each other in the presence of a uniform magnetic field. With such a configuration, the loop of the loop circuit 5210B captures the difference between the loops so that it exists in the changing field.

52C-A shows a gradiometer 5200C that uses an ELR QUID 4700 to measure the second derivative of the magnetic field through the loop of loop circuit 5210C, as will be appreciated. More specifically, the four loops of the loop circuit 5210C are configured to be equal in size in parallel to each other, and
The currents induced in each loop are shown to cancel each other in the presence of a uniformly changing magnetic field. With this configuration, the loop of the loop circuit 5210B captures the field change rate through the loop.

FIG. 53-A illustrates an exemplary ELR QUID 5300 according to some embodiments of the present invention. As shown, ELRQUID 5300 includes an exemplary intersection 5310 (potential intersection 5310A, potential intersection 5310B,
It may be composed of a plurality of ELR segments 5320 joined together at a potential crossing point 5310C).
For example, two ELR segments 5320 may form an intersection 5310 via one of potential intersections 5310A, 5310B, 5310C. In some embodiments of the invention, the potential crossing 531 0A
And the potential crossing 5310C forms a vertical crossing between the two ELR segments 5320 and the potential crossing 5310B forms a 45% crossing between the two ELR segments 5320, but as will be appreciated, the other A potential crossing point is possible. One or more barriers 4610 (two are shown in FIG. 53-A) are disposed between two ELR segments 5320 to form a Josephson junction 4600. As also shown, the plurality of ELR segments 5320 form a loop 4710 having at least one barrier 4610 disposed between two of the plurality of ELR segments 5320.

In some embodiments of the invention, two or more ELR QUIDs may be coupled together in parallel. In some embodiments of the invention, two or more ELR QUIDs are:
They may be coupled in series. In some embodiments of the invention, two or more ELR QUs
IDs may be coupled in series and connected in parallel with at least one of the other ELR QUIDs. In some embodiments of the present invention, the NM matrix of ELR QUIDs may be formed on a surface (such as a plane) as a sensor matrix that can detect, measure and / or locate various fields within the NM matrix. Good. In some embodiments of the present invention, ELR QUID
s NM matrix grid detects, measures and / or detects various fields within the volume of the NM matrix
It may be formed as a sensor grid that can be positioned. As you can see, ELRQUI
Various other configurations of Ds may be formed.

Because of this sensitivity, ELR QUIDs are biometric, for geophysical surveying, for magnetic microscopy, for nondestructive evaluation of defects in metals, for measuring material susceptance Can be used for. The properties of the improved ELR materials utilized by ELR QUIDs according to some embodiments of the present invention are such as medical, psychiatric, and other application areas where the sample being measured must be maintained above a low temperature. ELR QUID at
Allows extensive use of s.

In some embodiments, a QUID comprising a modified ELR material can be described as follows.

An ELRQUID comprising an ELR loop having an ELR material with improved operating characteristics and a Josephson junction.

ELR including an ELR loop including an ELR material having a critical temperature higher than 150K and a barrier material
An ELR QUID, wherein the ELR material and the barrier material are at least one Josephson junction in the ELR loop.

A plurality of ELR segments formed from ELR material having a critical temperature higher than 150K, arranged to form an ELR loop, and disposed between two of the plurality of ELR segments;
An ELR QUID having a barrier for forming a Josephson junction in the ELR loop.

An ELR QUID comprising an ELR loop, wherein the ELR loop comprises a modified ELR material and a Josephson junction, the modified ELR material comprising: a first layer of ELR material; and the ELR of the first layer. A second layer of modifying material bonded to the material, wherein the modified ELR material comprises the EL
ELR QUID characterized by improved operating characteristics over that of R material alone.

An ELR QUID comprising an ELR loop comprising a modified ELR material having a critical temperature higher than 150K and a barrier material, wherein the ELR material and the barrier material are at least one Josephson junction in the ELR loop The modified ELR material comprises a first layer of ELR material;
An ELR QU comprising: a second layer of modifying material coupled to the first layer of ELR material
ID.

ELR QUID, wherein the ELR QUID is a plurality of ELRs arranged to form an ELR loop
The ELR segment is formed from a modified ELR material, the modified ELR material is coupled to the first layer of ELR material and the ELR material of the first layer to modify An ELR QUID, wherein the modified ELR material has improved operating characteristics over the operating characteristics of the ELR material alone.

An asymmetric ELRQUID comprising an ELR loop comprising an ELR material and a Josephson junction, the ELR
The material has improved operating characteristics, the ELR loop has a first leg and a second leg, and the first leg carries more current than the second leg. ELRQUID.

A circuit comprising a modified ELR material, a Josephson junction, and an inductor coupled to the ELR QUID, wherein an alternating current flowing through the inductor induces a current in the ELR loop of the ELR QUID A circuit characterized by that.

A circuit comprising: an ELR QUID comprising an ELR loop including a modified ELR material; and a Josephson junction, wherein the ELR QUID includes at least one feed that induces a current in the ELR loop. And a power supply that supplies the current to the ELR QUID through the feed, and an input coil that detects the detected current and induces a current induced in the ELR QUID. circuit.

A magnetometer comprising: an ELR QUID comprising an ELR loop including a modified ELR material, a Josephson junction; an inductor; and a detection loop coupled to the inductor, the magnetometer comprising: The field flowing through provides current to the inductor, and the current through the inductor is second in the ELR loop of the ELR QUID.
A circuit characterized by inducing current.

A gradiometer including an ELR QUID, wherein the ELR QUID includes an ELR loop having a modified ELR material and a Josephson junction, an inductor and a first loop coupled to the inductor, the first loop and the inductor A detection circuit having a second loop connected to the first loop, wherein the first loop is substantially the same size as the second loop, and the first loop is Parallel, the first loop is disposed along a concentric axis of the second loop, and the first loop is wound around the concentric axis in a direction opposite to the second loop direction; The first loop and the second loop supply current to the inductor;
The current corresponds to a difference between a field flowing through the first loop and a field flowing through the second loop, and the current through the inductor is the ELR of the ELR QUID
A gradiometer characterized by inducing a second current in the R loop.

A gradiometer including an ELR QUID, wherein the ELR QUID includes an ELR QUID comprising an ELR loop having a modified ELR material and a Josephson junction, an inductor, a first loop coupled to the inductor, and the first loop A detection circuit including a second loop coupled to the second loop, a third loop coupled to the second loop, a fourth loop coupled to the third loop and the inductor, and the first loop, The second loop, the third loop, and the fourth loop are substantially the same size, and the first loop, the second loop, the third loop, and the fourth loop are substantially parallel to each other. The first loop, the second loop, the third loop, and the fourth loop share a concentric axis, and the first loop is in a direction opposite to the direction of the second loop. Wrapped around Ri, the third loop in a direction opposite to the direction of the fourth loop is wound around the common axis, the first loop, the second
The loop, the third loop, and the fourth loop supply current to the inductor, the current corresponds to a difference between a first difference and a second difference, and the first difference is the first difference This corresponds to the difference between the field flowing through the loop and the field flowing through the second loop, the second difference being the field flowing through the third loop and the fourth loop. Corresponding to the difference between the flowing field and the current through the inductor is the ELR QUID
A gradiometer characterized by inducing a second current in the ELR loop.

A circuit comprising a plurality of ELR QUIDs coupled in series with each other, wherein each of the plurality of ELR QUIDs comprises an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit including a plurality of ELR QUIDs coupled in parallel to each other, wherein each of the plurality of ELR QUIDs includes an ELR loop including a modified ELR material and a Josephson junction.

A circuit including an ELR QUIDs array in which a plurality of ELR QUIDs coupled in parallel to each other are arranged in series, each of the ELR QUIDs arrays comprising a plurality of ELR QUIs coupled in series to each other
The plurality of ELR QUIDs includes a modified ELR material and a Josephson junction.
A circuit characterized by including a loop.

A circuit including an ELR QUIDs array in which only a plurality of ELR QUIDs coupled in series are arranged in parallel, each of the ELR QUIDs arrays comprising a plurality of ELR QUIs coupled in parallel to each other
The plurality of ELR QUIDs includes a modified ELR material and a Josephson junction.
A circuit characterized by including a loop.

A circuit comprising an ELR QUID matrix consisting of N rows and M columns of ELR QUIDs, each ELR QUID,
Circuit comprising an ELR loop including a modified ELR material and a Josephson junction

A circuit comprising an ELR QUID grid arranged in a volume, wherein the ELR QUID consists of an L matrix consisting of N rows and M columns of ELR QUIDs spaced apart in each matrix, the ELR Each of the QUIDs includes a modified ELR material and a Josephson junction, the modified ELR material being connected to the first layer of ELR material and the ELR material of the first layer. And wherein the modified ELR material has operational characteristics that are improved over the operational characteristics of the ELR material alone.

Chapter 4 Medical Devices Made of ELR Material For the description of this chapter, refer to FIGS. 1 to 36 and FIGS. 37-A to 59-A. Accordingly, all reference numbers included in this chapter refer to components described in these figures.

ELR QUIDs are used for biometric measurements, for geophysical surveys, for geophysical surveys, for nondestructive evaluation in metals, for measuring the susceptance of materials, for their sensitivity. Can be used for. The improved ELR material properties utilized by ELR QUIDs according to some embodiments of the present invention are such as medical, psychiatric, and other applications where the sample being measured must be kept above low temperatures. ELR QUID in the field
Allows extensive use of s.

FIG. 54-A illustrates an exemplary MRI system 5410 according to various embodiments of the present invention. In some embodiments of the present invention, the MRI system 5410 includes an input device 5413, a control panel 5414,
A display screen 5416 can be controlled from an operator console 5412 that can include without limitation. In some embodiments of the present invention, input device 5413 may include, without limitation, a mouse, joystick, keyboard, trackball, touch activated screen, light wand, voice control, or similar or equivalent input device. Can be used for interactive geometric prescription.

In some embodiments of the present invention, operator console 5412 communicates with another computer system 5420 that allows the operator to control the generation and display of images on display screen 5416 via link 5418. To do. In some embodiments of the invention, computer system 5420 includes a number of modules that communicate with each other via backplane 5420A. These modules may include, without limitation, an image processor module 5422, a CPU module 5424, and a memory module 5426, known in the art as a frame buffer for storing an image data array. In some embodiments of the present invention, the computer system 5420 is coupled to a disk storage 5428 and a tape drive 5430 for storing image data and programs.

In some embodiments of the present invention, computer system 5420 includes high-speed serial link 54.
Communicate with another system control 5432 through 34. In some embodiments of the present invention, the system control 5432 includes a set of modules connected to each other by a backplane 5432a. These modules connect to the operator console 5412 via the serial link 5440, and the system control 5432 can receive commands from the operator that indicate the scan sequence to be executed, the CPU module 5436A and the pulse generator module
5438A can be included without limitation. In some embodiments of the present invention, the pulse generator module 5438 manipulates system components to perform a desired scan sequence and data indicating the timing, intensity and shape of the generated RF pulses, and data Generate the timing and length of the acquisition window. The pulse generator module 5438 is connected to a set of gradient amplifiers 5442 that indicate the timing and shape of the gradient pulses generated during the scan. In some embodiments of the invention, the pulse generator module 5438 also receives signals from several different sensors connected to the patient, such as ECG signals from electrodes attached to the patient, for physiological acquisition. Patient data can be received from controller 5444. In some embodiments of the present invention, the pulse generator module 5438 is connected to a scan room interface circuit 5446 that receives signals from various sensors related to the condition of the patient and the magnet system. In some embodiments of the present invention, the patient positioning system 5448 can receive commands via the scan room interface circuit 5446 to move the patient to a desired position for scanning. In some embodiments of the present invention, the patient positioning system 5448 may control the position of the patient so that the patient is moved continuously or stepwise during data collection.

In some embodiments of the present invention, the gradient waveform generated by the pulse generator module 5438 is applied to a gradient amplifier 5442 having G _X , G _Y , and G _z amplifiers. Each gradient amplifier 5442
To generate a magnetic field gradient used to encode the spatially acquired signal,
Exciting the physically corresponding gradient coil in the generally specified gradient coil assembly 5450. In some embodiments of the invention, the gradient coil assembly 5450 may form part of a magnet assembly 5542 that includes a polarizing magnet 5454 and a whole-body RF coil 5456. In an embodiment of the present invention, the transmit / receive module 5458 in the control system 5432 generates pulses amplified by an RF amplifier 5460 that is coupled to the whole-body RF coil 5456 by a transmit / receive switch 5462. The resulting signal emitted by the excited nuclei in the patient is the same whole body
It may be detected by RF coil 5456 and coupled to preamplifier 5464 via transmit / receive switch 5462. The amplified MR signal is demodulated, filtered, and the transceiver module
Digitized by 5458 receiver. The transmit / receive switch 5462 is used to electrically connect the RF amplifier 5460 to the whole body RF coil 5456 during the transmission mode and to electrically connect the preamplifier 5464 to 0 to the whole body RF coil 5456 during the reception mode. Pulse generator module 5438
Controlled by a signal from In some embodiments of the present invention, transmit / receive switch 546
2 may also allow separation of RF coils (eg, surface coils) to allow use in either transmit mode or receive mode.

The MR signal imaged by the whole body RF coil 5456 is digitized by the transceiver module 5458 and transferred to the memory module 5466 in the system control unit 5432. The scan is completed when an array of raw k-space data is acquired in the memory module 5466.
This raw k-space data is rearranged in a separate k-space data array for each image to be reconstructed, and each rearranged is input to the array processor 5468 to perform a Fourier transform of the data, Put in an array of image data. This image data is conveyed to the computer system 5420 via the serial link 5434 and stored in a memory such as the disk storage 5428A. In response to commands received from the operator console 5412, this image data may be archived to a long-term storage device, such as a tape drive 5430, and further processed by the image processor 54 and conveyed to the operator console 5412. May be presented via display 5416.

Various embodiments of the present invention include methods and systems suitable for use with the MRI system 5410, or similar or equivalent systems for obtaining magnetic resonance images.

FIGS. 55A-A illustrate exemplary MRI magnets 5500A, 5500B using various ELR materials, including modified ELR materials, apertured ELR materials, and / or new ELR materials, according to various embodiments of the invention. Show. Magnets 5500A, 5500B generates a magnetic field B _0. During the MRI process, the magnetic field B ₀ aligns certain atoms of the subject (eg, the human body) that are dispersed within the body tissue of the subject. In some embodiments, the subject may have the subject placed through magnet 5500 (e.g.,
“Closed” MRI applications), can be placed along a path substantially parallel to the magnetic field B ₀ . In some embodiments, the subject is placed along a path that is substantially perpendicular to the magnetic field B ₀ such that the subject is placed between the magnets 5500 (eg, an “open” MRI application). Can.

55A-A, 55B-A and 55C-A show a pair of MRI magnets 5500, it will be appreciated that any number of magnets can be used. Also, although 5500 in the figure describes an MRI magnet 5500 as a toroidal shape, other configurations may be used as will be appreciated.

FIGS. 55B-A show cross sections of MRI magnets 5500A, 5500B and magnetic fields B ₀ they generate according to various embodiments of the present invention.

FIGS. 55C-A show a cross section of a portion of a magnet 5500A according to various embodiments of the present invention. In some embodiments of the present invention, the magnet 5500A can include, but is not limited to, a switch 5530 coupled to a housing 5520, ELR material 5510, and a power source (not shown in FIG. 55C-A). It is not a thing.

In some embodiments of the invention, a winding 5510 of ELR material is made around the housing 5520. In some embodiments of the present invention, the housing 5520 may include a cavity that includes a winding of ELR material 5510. In some embodiments of the present invention, the housing 5520 is a house or other that includes windings of ELR material 5510.

In some embodiments of the present invention, the switch 5530 is connected to a power source for supplying a current to the ELR material 5510, thereby it is possible to generate a magnetic field B _0. In some embodiments of the present invention, the ELR material 5510 can be configured as a tape or wire. In some embodiments, the ELR material may be configured as a plurality of nanowire segments, such as nanowire segment 4110. In some embodiments of the invention, the ELR material 5510 may be configured as a nanowire coil, such as but not limited to nanowire coils 4200, 4300, and / or 4400. In some embodiments of the present invention, ELR material 5510 may include modified ELR material 1060, apertured ELR material, and / or other new ELR materials according to various embodiments of the present invention. .

In some embodiments of the present invention, magnet 5500 operates with improved operating characteristics to operate at temperatures above cryogenic temperatures. In some embodiments of the present invention, the magnet 5500 operates with improved operating characteristics to operate at temperatures above 150K. In some embodiments, a magnet
5500 may generate a magnetic field B _0. Without cooling to cryogenic temperature, at least 1.0T, 1.5T, 3.0T,
Has a magnetic flux density greater than 4.5T, or 6.0T.

56-A shows a cross-sectional view of an MRI magnet assembly 5000, according to various embodiments of the present invention. M
The RI magnet assembly 5000 is shown in FIG. 50-A as a toroidal bore magnet assembly, but as will be appreciated, other configurations such as spirals, ellipses, or other shapes may be used. Can do. For example, an open or portable MRI configuration using ELR material and magnets may be used.

In accordance with various embodiments of the present invention, the MRI magnet assembly 5600 comprises an ELR material 5610, a housing 56.
20, an insulating film 5630, a cavity 5640, a cold head 5650, and an opening 5660A, but are not limited thereto. In some embodiments of the present invention, ELR material 5610A may include modified ELR material 1060, apertured ELR material, and / or new ELR material according to various embodiments of the present invention. . In some embodiments of the present invention, ELR material 5610
Can be configured as tape or wire. In some embodiments of the invention,
The ELR material 5610 can be configured as a nanowire, such as a plurality of nanowire segments 4110. In some embodiments of the present invention, the ELR material 5610 is a nanowire coil 4200, 430.
It can be configured as a nanowire coil such as 0, and / or 4400.

In some embodiments of the present invention, ELR material 5610 is disposed within a cavity 5640 of housing 5620. In some embodiments of the present invention, the cavity 5640 is filled with a coolant so that the magnet 5610 is immersed in the coolant. In some embodiments of the present invention, the coolant may include a cryogenic coolant or a non-cryogenic coolant. In these examples,
Cold head 5650 includes a structure for maintaining a coolant, as will be appreciated. In some embodiments of the present invention, the cavity 5640 may be a gas (eg, ambient air or other gas) or a liquid (eg, water, carbon dioxide, ammonia, flon (TM), water-glycol mixture,
It may be filled with a coolant such as a water-betaine mixture or other liquid) or other coolant.

In some embodiments of the present invention (not shown in FIG. 56-A), the magnet 5610 can be disposed in or on a solid material.

According to various embodiments of the present invention, ELR material 5610 operates with improved operating characteristics such that it operates at temperatures higher than cryogenic temperatures. In some embodiments of the present invention, ELR material 5610 operates with improved operating characteristics such as operating at temperatures above 150K. Thus, the MRI magnet assembly 5100 can be used with a conventional superconducting magnet magnetic field that operates using a cryogenic coolant (eg, liquid helium, liquid nitrogen, or other cryogenic coolant) without a cryogenic coolant. It is possible to generate a magnetic field B ₀ that is substantially equal or better. In some embodiments of the present invention, the MRI magnet assembly 5100 generates a magnetic field B ₀ that is substantially comparable to conventional superconducting magnets that operate using cryogenic coolants such as liquid helium or liquid nitrogen.

FIG. 57-A is a block diagram illustrating an exemplary MRI circuit 5700 according to various embodiments of the present invention.
According to some embodiments of the present invention, the MRI circuit 5700 includes a converter 4500, a filter 5702, an analog to digital converter (ADC) 5704, a digital up converter (DUC) 5706, a filter 5708,
May include but is not limited to: processor / detector 5710, filter 5712, digital down converter (DDC) 5714, digital equalizer 5716, digital to analog converter (DAC) 5718, high power amplifier (HPA) 5720 It does n’t mean that.

In some embodiments of the present invention, as will be appreciated, filters 5702, 5708, ADCs, as will be appreciated.
The 5704 and the digital up converter 5706 can be configured as a receiver circuit. Similarly, in some embodiments of the present invention, the filter 5712, the digital down converter 5714, the digital equalizer 5716, the DAC 5718, and the HPA 5720 can be configured as a transmission circuit. In some embodiments of the present invention, as will be appreciated, the aforementioned receiver and transmitter circuits may be configured as transceiver circuits.

In some embodiments of the present invention, one or more components or one or more elements of one or more components of a receiving circuit, transmitting circuit, or transceiver circuit (eg, interconnects) Etc.) can include improved ELR materials (ie, composed of improved ELR materials), such as modified ELR materials 1060, apertured ELR materials, and / or new ELR materials. In some embodiments of the invention, an improved E
LR material can be configured as ELR nanowires, and multiple nanowire segments 4110
Can be included. In some embodiments of the present invention, the ADC 5704 may use an ELR QUI that uses one or more ELR QUIDs (eg, ELR QUID4700, ELR QUID4800, ELR QUID4900).
A low noise and high sensitivity digitizer front end such as a D detector can be included. In some embodiments, the use of a QUID detector with MRI increases the resolution of RF detection. In some embodiments, the use of a high Q ELR filter reduces insertion loss and bandwidth and improves SNR. In some embodiments, the ELR QUID detector is sufficiently sensitive not to require a low noise amplifier.

In some embodiments of the present invention, processor 5710 may be configured to receive a voltage induced by converter 4500. The processor 5710 may be configured to process information based on various components of the receive and / or transmit circuits that operate in the ELR state (the components may be formed of improved ELR material). . This means
The signal processing speed can be improved, thereby shortening the scan time. In some embodiments of the invention, the processor 5710 may be configured to control the voltage supplied to the converter 4500 to generate RF pulses.

FIG. 58-A shows a cross-sectional view of an MRI apparatus 5800 according to various embodiments of the present invention. According to some embodiments of the present invention, the MRI apparatus 5800 includes a housing 5802, a magnet 5810, a gradient coil 5820, an RF coil 5830, a magnet bore 5860, a circuit 5870, an RF coil controller 5875, a gradient coil controller 5880, and Including but not limited to computer device 5890. In some embodiments of the present invention, circuit 5870 may include one or more components shown in FIG. 57-A and / or one or more elements of circuit 5700. In some embodiments of the present invention, the computing device 5890 may be coupled to the RF coil controller 5875, the gradient coil controller 5880A, and the circuit 5870. The computer device 5890 can control the electromagnetic field emitted by the gradient coil 5820 and / or the RF coil 5830 via the RF coil controller 5875 and the gradient coil controller 5880.
In some embodiments of the present invention, computing device 5890 controls control circuit 5870.

In some embodiments of the present invention, the various components of the MRI apparatus 5800 can use the improved ELR materials described herein. For example, magnet 5810, gradient coil 5
820, RF coil 5830, and / or circuit 5870 are improved ELR as disclosed herein.
Materials can be used.

By including various components, such as using the improved ELR material disclosed herein, the MRI machine 5800 achieves superior performance over conventional MRI scanners that do not use the improved ELR material. can do. For example, the MRI apparatus 5800 has an improved SNR,
High resolution, simplified and reliable cooling, miniaturization, large aperture for the subject (magnet bore 5860), and higher energy efficiency can be achieved.

In some embodiments of the present invention, magnet 5810 may be used as such a modified ELR material 1060, an ELR material with openings, and / or a new ELR material according to various embodiments of the present invention.
It may contain an improved ELR material. In some embodiments of the present invention, magnet 5810 includes
The magnet 5500A shown in FIG. 55C-A can be included.

By using various improved ELR materials described herein, magnet 5810 exhibits improved operating characteristics over conventional MRI magnets. As described above, such improved operating characteristics include the operation of supplying a magnetic strength of 0.5T to 3.0T or higher at a high temperature. By operating at a high temperature, the magnet 5810 requires a small cooling system or no cooling system at all, thereby easily obtaining the compact design and low operating cost of the MRI apparatus 5800. For example, less space required for the cooling system allows for a larger opening where the subject is placed. In this manner, many aperture systems and thus many patients on the stretcher can be scanned. For example, a stretcher or other structure that lays the subject may have wheels to scan the subject, may be placed inside the MRI device 5800, or the MRI device itself has wheels. It may be arranged near the stretcher. The use of the magnet 5810 makes it easy to obtain a large opening, so the MRI apparatus 5800 need not be limited to the hard table of a conventional MRI scanner.

In some embodiments of the present invention, the gradient coil 5820 may be modified such as modified ELR material 1060, apertured ELR material, and / or new ELR material according to various embodiments of the present invention. May contain ELR material. Various improved ELRs disclosed herein
By using materials, the gradient coil 5820 exhibits improved operating characteristics over conventional gradient coils. In some embodiments of the present invention, the RF coil 5830 may include a modified ELR material 1060, an open ELR material, and / or a new ELR according to some embodiments of the present invention.
It may contain improved ELR materials such as materials. By using various improved ELR materials disclosed herein, the RF coil 5830 exhibits improved operating characteristics over conventional RF coils. For example, the use of improved ELR material, gradient coil 5820, and / or RF coil 5830 can reduce or eliminate resistive losses and increase selectivity and resolution relative to conventional coils.

In some embodiments of the present invention, the RF coil 5830 can include various transducers disclosed herein, such as the transducer 4500.

In some embodiments of the present invention, circuit 5870 can include an ELR QUID detector that uses one or more ELR QUIDs (eg, QUIDELR 4700, QUID4800, ELRQUID4900). In some embodiments, using an ELR QUID detector for MRI increases the resolution and resolution of the RF detector. In some embodiments, the use of a high Q ELR filter reduces insertion loss and bandwidth and improves SNR.

In some embodiments, enhanced transmission and detection capabilities resulting from the use of improved ELR materials (eg, those described above) can be achieved with low field (eg, less than 0.5T) MRI.
Makes it easier to use, but achieves higher resolution than conventional low-field MRI. In these embodiments, low field MRI allows for portability, large and less restrictive measurement fields, reduced chemical shifts, and dramatically lower system costs. Chemical shift refers to the change in resonance frequency due to the inherent magnetic shielding of the anatomy. Molecular structure and electron orbital properties shield the main magnetic field,
Generate a field that produces a distinct peak in the magnetic resonance spectrum. In the case of the proton spectrum, the peaks are water and fat, and in the case of mammography, it is a silicon material. A low frequency of approximately 3.5 ppm (parts per million) of protons in fat and 5.0 ppm of protons in silicon is generated and compared to the resonance frequency of protons in water. Since the resonance frequency increases linearly in proportion to the magnetic field strength, the absolute value of the difference between the fat and water resonances also increases, creating a high field strength magnet that is susceptible to chemical shift artifacts. Thus, the use of MRI with high resolution but low electric field can reduce or eliminate the effects of chemical shifts.

In some embodiments of the present invention, low field MRI relaxes the tightly coupled components of gradient coil 5820 and / or RF coil 5830, thereby reducing the housing in which the subject is being scanned. Open. In these examples, the MRI apparatus 5800 may be portable such that it is wheeled / placed around a stretcher or other structure that carries the subject. As will be appreciated, the stretcher, or other structure, may be made from an MRI inert material.

FIG. 59-A shows a portable MRI apparatus system 5900 according to various embodiments of the present invention. In some embodiments of the present invention, the portable MRI apparatus system 5900 can include a portable MRI apparatus 5910, a sensor 5920, a QUID detector 5930, a magnet 5950, a gradient coil 5960, an RF coil 5970, It is not limited to them. In some embodiments of the invention, ELR QUID detector 5930 (eg, QUIDELR 4700, 4800, 4900) uses an improved ELR material, so
Thereby having improved operating characteristics as described above. In some embodiments, computing device 5940 controls the magnetic field from magnet 5950. In some embodiments, the computing device 5940 controls the gradient field from the gradient coil 5960. In some embodiments, the computing device 5940 controls excitation pulses from the RF coil 5970.

In some embodiments of the present invention, computing device 5940 can combine magnet 5950 and ELR QUID detector 5930. In some embodiments of the present invention, the computing device 5940 allows the magnet 5950 to generate a magnetic field for a low field MRI scan. In some embodiments of the present invention, the magnet 5950 may be driven by the sensitivity of the ELR QUID detector 5930.
A low strength magnet that generates a low strength magnetic field of less than 0.5 Tesla can be included. In some embodiments of the present invention, the gradient coil 5960 can generate a gradient field to allow the location of a particular atom in the subject. In some embodiments of the present invention, the RF coil 5970 can generate an excitation pulse that causes the subject's atomic resonance signal.

According to various embodiments of the present invention, sensor 5920 includes a magnetometer, inclinometer, flux transformer, or other detection component that detects a resonance signal caused by a low-intensity magnetic field generated by magnet 5950. However, it is not limited to these. The ELR QUID detector 5930 can receive and process the detected signal, as will be appreciated.

Like conventional devices that use SQUID detectors, the portable MRI device 5910 is an ELR QUID detector.
It is not necessary to use a cryogenic coolant / cooler to cool the 5930. Therefore, such a portable MRI apparatus 5910 with high image quality, low cost, and easy maintenance may be easily movable without requiring a cryogenic wheel.

As shown in FIG. 59-A, for example, the portable MRI apparatus 5910 may be disposed adjacent to a structure 5902 such as a stretcher, an inspection table, a wall / floor / ceiling, but is not limited thereto. Do not mean. In some embodiments of the present invention, portable MRI device 5910 is connected to a rigid structure 5902.
In other examples, the portable MRI device 5910 can be moved around the structure 5902.
For example, the structure 5902 may be detachable inside the MRI apparatus 5910 and / or the MRI apparatus 5910 may be detachably disposed around the structure 5902. In these examples,
The magnet 5950 itself is portable and can be rigidly coupled to the housing of the portable MRI device 5910 (not shown in FIG. 59-A) or it can be rigidly coupled to the structure 5902 or other structure.

In some embodiments of the present invention, the structure 5902 may include opposing surfaces 5901, 5903. Surface 5901 and / or surface 5903 may be substantially flat, curved, or other shape based on location or other specifications. In some embodiments of the invention, a subject, such as a patient, can scan on or near the surface 5901. For example, the patient
Standing adjacent to 01, lying on or below surface 5901, or a body part such as an arm, head, etc. can be placed on, below or near surface 5901. In some embodiments of the present invention, the portable MRI device 5910 includes a surface 5903 (ie, a structure 590 opposite the scanned subject).
2 side) can be placed adjacent. In this manner, the subject stands near or under the structure 5902 without scanning the portable MRI device 5910 adjacent to the side of the subject opposite the device or portable MRI device 5910. Open so you can lie down
MRI processing can be achieved. In these examples, medical procedures such as surgery and examination can be assisted by images generated by the portable MRI device 5910.

According to some embodiments of the present invention, magnet 5950, gradient coil 5960, and / or RF coil 5970 use an improved ELR material, such as described herein. Has improved operating characteristics. In these embodiments, the use of improved ELR materials facilitates various configurations of magnet 5950, gradient coil 5960, and / or RF coil 5970. The tight coupling between conventional magnets, gradient coils, and RF coils, required for conventional MRI scanners, is mitigated using magnets 5950, gradient coils 5960, and / or RF coils 5970. These slack configurations may result in larger aperture openings than conventional scanners using conventional magnets, gradient coils, and RF coils that do not use the improved ELR material disclosed herein. unknown. The large caliber opening makes the subject easier to accommodate and with better portability of the portable MRI device 5910 (eg, removable around the structure 5902 or vice versa).

In some embodiments of the present invention, the portable MRI device 5910 can include active and / or passive electromagnetic shielding (not shown), as will be appreciated. In some embodiments of the present invention, the portable MRI device 5910 can be used in a “clean room” or in a shielded room. In some embodiments of the present invention (not shown), the structure 5902 can include one or more shielding elements.

Although the portable MRI device 5910 is shown as being located on one side of the structure 5902 opposite the subject, the portable MRI device 5910 is not accessible to the subject due to the portability of the portable MRI device 5910. Can be arranged at various positions. In addition, any combination of sensors 5920, ELR QU
The ID detector 5930, computer device 5940, magnet 5950, gradient coil 5960, and RF coil 5970 may be housed in a single housing (eg, shown in FIG. 54-A)
It may be accommodated in a plurality of housings. For example, the magnet 5950 may be portable, included in the portable MRI device 5910, or coupled to the structure 5902.

As will be appreciated, the device 5940 includes a memory that stores instructions that constitute one or more processors that control the magnet 5950 and generate MRI images based on processing by the ELR QUID detector 5930. (Not shown in Figure 59-A).

In some embodiments, a medical device that includes a modified ELR material can be described as follows.

A magnetic resonance imaging (MRI) magnet comprising an ELR material having improved operating characteristics,
A magnetic resonance imaging (MRI) magnet characterized in that the ELR material propagates a current that generates a magnetic field during MRI processing, said magnetic field allowing atoms in the subject's body to align.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet comprising ELR material having improved operating characteristics, wherein the MRI magnet is coupled to the housing;
The ELR material generates a magnetic field during MRI processing, the magnetic field allowing atoms in the subject's body to align, a magnetic resonance imaging (MRI) magnet assembly .

A magnetic resonance imaging (MRI) magnet comprising a wire comprising ELR material with improved operating characteristics, said wire generating a magnetic field during MRI processing, said magnetic field being an atom in a subject's body Magnetic Resonance Imaging (MRI) magnet, characterized in that it allows to align.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet with improved operating characteristics and coupled to the housing, wherein the ELR material generates a magnetic field during the MRI process The magnetic resonance imaging (MRI) magnet assembly, wherein the magnetic field allows atoms in the subject's body to align.

A magnetic resonance imaging (MRI) magnet having ELR nanowires configured to conduct current to generate a magnetic field during MRI processing, said ELR nanowires having a length, width, and depth An ELR material having a three-dimensional parameter including, at least one of the three-dimensional parameters is a threshold at which the ELR nanowire does not exhibit at least one superconducting phenomenon, but operates at a very low resistance. Magnetic resonance imaging (MRI) magnet characterized by being smaller than.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet coupled to the housing such that the MRI magnet conducts current to generate a magnetic field during an MRI process The ELR nanowire comprises an ELR material having three-dimensional parameters including length, width, and depth, and at least one of the three-dimensional parameters includes the ELR nanowire Magnetic Resonance Imaging (MRI), characterized by not exhibiting at least one superconducting phenomenon, but smaller than a threshold that operates at a very low resistance
Magnet assembly.

A magnetic resonance imaging (MRI) magnet comprising a nanowire comprising an ELR material having improved operating characteristics, wherein the nanowire propagates a current that generates a magnetic field during an MRI procedure, the magnetic field of the subject A magnetic resonance imaging (MRI) magnet characterized by aligning atoms in the body.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet coupled to the housing, the MRI magnet comprising nanowires comprising ELR material having improved operating characteristics; A magnetic resonance imaging (MRI) magnet assembly, wherein the nanowire generates a magnetic field during MRI processing, the magnetic field aligning atoms in a subject's body.

A magnetic resonance imaging (MRI) magnet having an ELR nanowire contour configured to conduct a current that generates a magnetic field during MRI processing, wherein the magnetic field aligns atoms in a subject's body, and The ELR nanowire contour has at least one ELR nanowire segment and each ELR
A magnetic resonance imaging (MRI) magnet, wherein the nanowire segment comprises an ELR material with improved operating characteristics.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet coupled to the housing, wherein the MRI magnet is configured to conduct a current that generates a magnetic field during the MRI process. An ELR nanowire contour, the magnetic field aligns atoms in the body of the subject, the ELR nanowire contour has at least one ELR nanowire segment,
A magnetic resonance imaging (MRI) magnet assembly, wherein each ELR nanowire segment includes an ELR material having improved operational characteristics.

A magnetic resonance imaging (MRI) magnet comprising an ELR nanowire coil configured to conduct a current that generates a magnetic field during MRI processing, wherein the magnetic field aligns atoms in a subject's body, and The ELR nanowire coil has at least one ELR nanowire profile, each of the at least one ELR nanowire profile having a plurality of ELR nanowire segments;
Each of the plurality of ELR nanowire segments substantially forms a polygon.
Coupled to another ELR nanowire segment that is at least one of the plurality of ELR nanowire segments, wherein the at least one ELR nanowire segment includes an ELR material having improved operational characteristics Magnetic resonance imaging (MRI) magnet.

A magnetic resonance imaging (MRI) magnet assembly comprising a housing and an MRI magnet coupled to the housing such that the MRI magnet conducts current to generate a magnetic field during an MRI procedure An ELR nanowire coil configured, wherein the ELR nanowire coil has at least one ELR nanowire profile, the at least one ELR nanowire profile has a plurality of ELR nanowire segments, and the plurality of ELR nanowires Each of the segments is coupled to another ELR nanowire segment that is at least one of the plurality of ELR nanowire segments to form a substantially polygon, and at least 1
One of the ELR nanowire segments includes an ELR material having improved operational characteristics. A magnetic resonance imaging (MRI) magnet assembly.

A magnetic resonance imaging (MRI) nanowire transducer having at least one nanowire segment of improved ELR material, wherein current is applied to at least one nanowire during MRI processing Then, when a magnetic field that aligns atoms in the subject's body is induced, or when the aligned atoms become misaligned during the MRI process, a resonance signal emitted by the atoms in the subject's body is generated. A magnetic resonance imaging (MRI) nanowire transducer characterized by detecting.

A magnetic resonance imaging (MRI) nanowire transducer comprising at least one nanowire segment of improved ELR material, said MR when exposed to a resonance signal during MRI processing
An I nanowire converter detects the resonance signal through at least one nanowire segment and converts the detected resonance signal into an alternating current that can be measured and used for imaging Resonance imaging (MRI) nanowire transducer.

A magnetic resonance imaging (MRI) nanowire transducer comprising at least one nanowire segment of improved ELR material, said MRI nanowire transducer being electrically coupled to an alternating current source, said MRI The nanowire transducer induces an electromagnetic field in response to the alternating current source during MRI processing, the induced electromagnetic field aligns atoms in the subject's body, and then when the atoms become misaligned, a resonance signal A magnetic resonance imaging (MRI) nanowire transducer, wherein the resonance signal can be detected and used for imaging.

A magnetic resonance imaging (MRI) nanowire transducer comprising an ELR material having improved operating characteristics, wherein the MRI nanowire transducer is a magnetic field when current is applied to the MRI nanowire transducer during MRI processing. And the electromagnetic field aligns atoms in the subject's body, or resonances emitted by atoms in the subject's body when the aligned atoms become misaligned during the MRI process. A magnetic resonance imaging (MRI) nanowire transducer characterized by detecting a signal.

A magnetic resonance imaging (MRI) nanowire transducer having ELR material with improved operating characteristics, wherein the MRI nanowire transducer detects the resonance signal when exposed to a resonance signal during an MRI procedure A magnetic resonance imaging (MRI) nanowire transducer, wherein the detected resonance signal can be measured and used for imaging.

A magnetic resonance imaging (MRI) nanowire transducer comprising an ELR material having improved operating characteristics, wherein the MRI nanowire transducer is electrically coupled to an alternating current source, the MRI nanowire transducer , Inducing an electromagnetic field in response to the alternating current source during an MRI procedure, the induced electromagnetic field aligns atoms in the subject's body, and then causes a resonance signal when the aligned atoms become misaligned. A magnetic resonance imaging (MRI) nanowire transducer characterized in that it can be emitted and the resonance signal measured and used for imaging.

A magnetic resonance imaging (MRI) transmitter circuit comprising a digital-to-analog converter (DAC) that generates an analog signal based on a digital output of an MRI system, and a converter electrically coupled to the DAC, The converter has an improved ELR material, the DAC converter induces a magnetic field when the analog signal is applied to the improved ELR material, and the electromagnetic field is:
A magnetic resonance imaging (MRI) transmitter circuit characterized by aligning atoms in a subject's body.

A magnetic resonance imaging (MRI) receiving circuit including a transducer, the transducer having an improved ELR material, wherein the transducer is subject to alignment when the aligned atoms become misaligned during the MRI procedure. Detecting a resonance signal emitted by the atoms in the body of the body, the converter having an analog-to-digital converter (ADC) electrically coupled to the converter, wherein the ADC A magnetic resonance image (MRI) receiving circuit including a transducer that is digitized and wherein the digitized resonance signal is used to generate an MRI image.

A magnetic resonance imaging (MRI) transceiver circuit including a transducer, the transducer comprising an improved E
LR material, analog-to-digital converter (ADC) electrically coupled to the converter, and MRI
Digital-to-analog converter that generates an analog signal based on the digital output of the system (
DAC), and during the MRI procedure, the DAC converter is configured such that when the aligned atoms become misaligned,
Detecting a resonance signal emitted by the atoms in the subject's body, or generating a magnetic field when an analog signal is applied to the improved ELR material, the electromagnetic field aligning the atoms in the subject's body, and An analog-to-digital converter (ADC) digitizes the resonance signal,
A magnetic resonance imaging (MRI) transceiver circuit, wherein the digitized resonance signal is used to generate an MRI image.

A magnetic resonance imaging (MRI) scanner with an MRI magnet containing an improved ELR material and a current of M
When applied to a RIRF transducer, it induces a magnetic field that aligns the atoms in the subject's body and produces a resonance signal emitted by the atoms when the aligned atoms become misaligned during the MRI process. A magnetic resonance image comprising: the MRIRF transducer configured to detect; and an MRI detector for detecting the detected resonance signal from the MRIRF transducer and generating an MRI image. MRI) scanner.

An MRI detector comprising an ELR QUID comprising an improved ELR material, wherein the ELR QUID is emitted by the aligned atoms in the body of the subject when the aligned atoms become misaligned during the MRI process An MRI detector characterized by detecting a resonance signal to be detected.

An MRI detector comprising an ELR QUID comprising an ELR material having at least one improved operating characteristic, wherein the ELR QUID is detected in the subject's body when the aligned atoms become misaligned during the MRI process. MR characterized by detecting resonance signals emitted by aligned atoms
I detector.

An MRI detector comprising an ELR QUID comprising a modified ELR material, wherein the modified ELR material comprises an ELR material bonded to the material to be modified, and the modified ELR material is an ELR material alone An MRI detector characterized in that it has improved operating characteristics over the operating characteristics of.

A portable MRI scanner comprising an MRI magnet, wherein the MRI magnet includes an improved ELR material, such that the improved ELR material does not require cryogenic cooling during the MRI procedure. Operating in an ELR state at temperatures above 150K, the bore of the MRI magnet is enlarged so that the portable MRI scanner is removable around the structure that the subject is being scanned during the MRI procedure, The MRI magnet, when current is applied to the MRI RF transducer during MRI processing,
An MRI RF transducer for inducing a magnetic field, wherein the electromagnetic field aligns atoms in a subject's body and the resonance signal emitted by the atoms when the aligned atoms become misaligned during an MRI procedure The MRI magnet detects a resonance signal detected by the MRI RF converter and generates an MRI image.

A portable MRI scanner, said portable MRI scanner comprising an improved ELR material
The improved ELR material having a magnet operates in an ELR state at temperatures above 150K such that the MRI magnet does not require cryogenic cooling during the MRI procedure, and the bore of the MRI magnet has an MRI procedure The structure in which the subject is being scanned is magnified so that it can be removed from the portable MRI scanner, and the portable MRI scanner can be used when current is applied to the MRI RF transducer during the MRI process. Further comprising an MRI RF transducer configured to induce a magnetic field, wherein the electromagnetic field aligns atoms in a subject's body, and the aligned atoms become misaligned during the MRI procedure; The portable MRI scanner detects a resonance signal emitted by the atoms, and the portable MRI scanner further includes an MRI detector that detects the detected resonance signal from the MRI RF transducer and generates an MRI image. A belt-type MRI scanner.

A portable MRI scanner, wherein the portable MRI scanner is configured to induce a magnetic field when a current is applied to an MRI RF transducer during a MRI procedure and a low strength magnet that generates a low strength magnetic field Said MRI RF transducer, wherein said electromagnetic field aligns atoms in a subject's body,
When the aligned atoms become misaligned during the MRI procedure, a resonance signal emitted by the atoms is detected, and the portable MRI scanner further comprises an ELR QUID detector that detects the resonance signal. A portable MRI scanner characterized by

A portable MRI scanner, comprising: an MRI magnet and an MRI gradient coil comprising an improved ELR material, wherein the MRI gradient coil generates a gradient magnetic field during an MRI procedure The gradient magnetic field rotates the atoms in the subject's body at different speeds based on the position of the atoms in the body, and the improved ELR material has an MRI magnet bore. Allowing for a specific configuration of the MRI gradient coil that allows magnification, the portable MRI scanner further comprises an MRI detector that detects a resonance signal and generates an MRI image during the MRI procedure This is a portable MRI scanner.

A portable MRI scanner, wherein the portable MRI scanner includes an MRI magnet and an MRI RF coil that includes an improved ELR material, wherein the MRI RF coil causes the current to pass through the MRI RF coil during the MRI procedure. When applied to the magnetic field, the electromagnetic field aligns atoms in the body of the subject or is emitted by the atoms when the aligned atoms become misaligned during the MRI procedure. The improved ELR material allows for a specific configuration of the MRI RF coil that allows the bore of the MRI magnet to expand, and the portable MRI scanner can be used during MRI procedures. The portable MRI scanner further includes an MRI detector that detects an resonance signal and generates an MRI image.

A magnetic resonance imaging (MRI) gradient coil includes an improved ELR material, wherein the MRI gradient coil conducts current to generate a gradient field during the MRI procedure, and the gradient field is applied to the subject's body. A magnetic resonance imaging (MRI) gradient magnetic field coil, wherein atoms within are rotated at different speeds based on their position in the body.

A magnetic resonance imaging (MRI) gradient coil comprising a nanowire comprising an improved ELR material that conducts current to generate a gradient magnetic field during an MRI procedure, the gradient magnetic field being a subject A magnetic resonance imaging (MRI) gradient coil, wherein atoms in the body rotate at different speeds based on the position of the atom in the body.

A magnetic resonance imaging (MRI) apparatus, comprising: an MRI magnet; and an MRI
An RF coil, wherein the MRI RF coil induces a magnetic field that aligns atoms in a subject's body when current is applied to the MRI RF coil during an MRI procedure, or the atoms are the MR
I detects resonance signals emitted by the atoms when misaligned during the procedure, and the magnetic resonance imaging (MRI) apparatus further includes an improved ELR material to generate a gradient magnetic field during the MRI procedure A gradient coil that conducts current to cause the atoms in the subject's body to rotate at different speeds based on the position of the atoms, and the magnetic resonance imaging (MRI) device further includes: MRI that generates MRI images by detecting resonance signals detected from MRI RF coils
A magnetic resonance imaging (MRI) apparatus comprising a detector.

A magnetic resonance imaging (MRI) radio frequency (RF) coil having improved ELR material, MR
During the I treatment, the RF coil induces a magnetic field that aligns atoms in the body of the subject when current is applied to the segment of at least one nanowire during the MRI procedure, or the aligned atoms A magnetic resonance imaging (MRI) radio frequency (RF) coil that detects resonance signals emitted by the atoms in the subject's body when they become misaligned during the MRI procedure.

A magnetic resonance imaging (MRI) radio frequency (RF) coil comprising improved ELR material, MRI
When exposed to a resonance signal during a procedure, the RF coil detects the resonance signal and converts the detected resonance signal into alternating current that can be measured and used for imaging. Magnetic Resonance Imaging (MRI) radio frequency (RF) coil.

A magnetic resonance imaging (MRI) radio frequency (RF) coil comprising an improved ELR material comprising:
An RF coil is electrically coupled to an alternating current source, and the RF coil induces an electromagnetic field in response to the alternating current source during an MRI procedure, and the induced electromagnetic field aligns atoms in the subject's body. A magnetic resonance imaging (MRI) radio frequency (RF) characterized in that, after that, when the atoms become misaligned, a resonance signal is emitted, and the resonance signal can be detected and used for imaging.
coil.

A magnetic resonance imaging (MRI) device comprising an MRI RF coil comprising an MRI magnet and an improved ELR material, wherein during the MRI procedure, the MRI RF coil is an electrical current MR
I induce a magnetic field that aligns atoms in the body of a subject when applied to at least one segment of nanowires during treatment, or when the aligned atoms become misaligned during the MRI procedure, Detecting a resonance signal emitted by the atoms in the subject's body;
The magnetic resonance imaging (MRI) device includes a gradient coil that conducts current to generate a gradient magnetic field during an MRI procedure, the gradient magnetic field based on the position of the atom in the subject's body. The magnetic resonance imaging (MRI) apparatus further includes an MRI detector that rotates at different speeds and detects an resonance signal detected from the MRI RF coil to generate an MRI image. (MRI) equipment.

Chapter 5 Capacitors Made of ELR Material Refer to Figure 1-36 and Figures 37A-B to 43-B for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in these figures.

Capacitors are described that include components formed of modified, open, and / or other new, very low resistance (ELR) materials. In some examples, the capacitor includes one or more plates formed of ELR material. In some examples, the capacitor includes two plates or elements formed of ELR material and a dielectric disposed between the two plates or elements. In some examples, the capacitor is a thin film ELR
It is formed using a material. ELR materials provide very low resistance to current at temperatures higher than those associated with current high temperature superconductivity (HTS), improving the operating characteristics of capacitors at high temperatures.

In some examples, the ELR material is manufactured based on the type of material, the ELR material, the application of the ELR material, the size of the component using the ELR material, and the operating requirements of the device or machine using the ELR material. Thus, during capacitor design and manufacture, the material used as the base layer of the ELR material and / or the material used as the modifying layer of the ELR material has various considerations, operations that may be desired, and / or Or it may be selected based on manufacturing characteristics.

Various devices, applications, and / or systems are described in the ELR described herein.
A capacitor may be employed. In some examples, conditioned and other resonant circuits employ ELR capacitors. In some examples, the storage device employs ELR capacitors. In some examples, the coupling element employs an ELR capacitor. In some examples, the pulse power system employs ELR capacitors. In some examples,
An ELR capacitor is used for the timing element. In some examples, the filtering element employs an ELR capacitor.

Modified, open, and / or other new ELRs as described herein
The material may be utilized by capacitors and related devices and systems. Figure
37A-B are schematic diagrams showing a capacitor 3700 using an ELR material. Capacitors are either the first plate 3710 or the first conductive element, the second plate 3712 or the second conductive element, the second
A space or gap 3715 separating the first plate 3710 from the plate 3712 is included.

When a voltage difference or potential difference across the first plate 3710 and the second plate 3712 is applied, an electrostatic field is developed in the space 3715 between the two plates. The electrostatic field accumulates energy and generates a force between the plates. The “capacitance” of a capacitor measured in farad is the ratio of the charge on each plate to the applied potential difference, C = Q / V. The capacitance depends on the distance between the plates and increases as the distance between the plates decreases.

Capacitor 3700 does not include a dielectric layer, but many capacitors use a dielectric layer to increase capacitance. FIGS. 37B-B are schematic views showing a capacitor 3720 using a modified ELR film. Capacitor 3720 includes a first plate 3730, a second plate 3732, and a dielectric or non-conductive layer 3735 located between the first plate 3730 and the second plate 3732. In some examples, the dielectric layer 3735 is formed of a material having a high dielectric constant and / or a high breakdown voltage in order to increase the amount of charge accumulated by the capacitor.

In some examples, dielectric layer 3735 is an insulator. Exemplary dielectric materials for use as dielectric layer 3735 include paper, plastic, glass, mica, ceramic, electrolyte, oxide, and / or other class 1 or class 2 dielectrics. The following list represents various capacitor / dielectric types that can be used with the modified, apertured, and / or other new ELR materials described herein, although others are of course used. Is possible.

"Void" capacitor without a dielectric layer. These generally have a low dielectric loss. The air gap capacitor can be used as a variable capacitor for a resonant HF antenna, among others.

A “ceramic” capacitor with a ceramic dielectric layer that varies the dielectric constant value and dielectric loss. Examples include COG, NP0, X7R, X8R, Z5U, and 2E6 capacitors. Ceramic capacitors may be employed by filters, timing elements, and crystal oscillators, among others.

A “glass” capacitor with a glass dielectric layer. These are generally very stable and reliable.

A “paper” capacitor with a dielectric layer. Paper capacitors can be used in wireless devices, power supplies, motors, and other embodiments.

A “polycarbonate” capacitor with a polycarbonate dielectric layer. These generally have a low temperature coefficient and are not easily degraded. Polycarbonate capacitors can be used in filters, among others.

"Polyester" capacitors with a dielectric layer of polyester film. Polyester capacitors can be used in signal capacitors and signal integrators, among others.

A “polystyrene” capacitor with a polystyrene dielectric layer. Polystyrene capacitors can be used as signal capacitors, among others.

“Polypropylene” capacitors having a polypropylene dielectric layer generally exhibit low dielectric loss and high breakdown voltage. Polypropylene capacitors can be used as signal capacitors, among others.

"Plastic" -capacitors with a plastic dielectric layer include, among other things, PTFE or Teflon "dielectric.

A “mica” capacitor with a mica dielectric layer like silver mica. “Mica” capacitors can be used in HF and VHF RF circuits, among others.

An “electrolyte” capacitor having an oxide dielectric layer surrounded by a dielectric solution. These generally have a larger capacity per unit volume compared to other types. The electrolytic capacitor may be an ultracapacitor and / or a supercapacitor, and can be used in an electric circuit as a power supply filter, a coupling capacitor, or an energy storage device.

"Variable" capacitor. “Variable” capacitors have mechanical structures that change the distance between plates or the amount of surface area of the overlapping plates, and / or variable capacitance (varicap) diodes that change capacitance as a function of applied reverse bias voltage It is a capacitor. These may be employed in sensors such as microphones, among others.

A "vacuum" capacitor with a vacuum between the conductive plates. “Vacuum” capacitors are dielectric loss, self-healing, variable, and / or tunable, may be used in high power RF transmitters, and other dielectric / It may be used in a capacitor.

In addition to capacitors formed by two plates separated by a dielectric layer, there are other methods for forming capacitors. For example, conductive areas of metal in different layers of a multilayer printed circuit board or substrate can act as a very stable capacitor. In addition, capacitors can be formed on the substrate in various patterns of metallization. FIGS. 37C-B are schematic diagrams illustrating a substrate-based capacitor 3740 using ELR material.

The capacitor 3740 is formed on the substrate 3745, and includes a first conductive element 3750 having various first conductive portions 3755 and a second conductive element 3760 having various second conductive portions 3765. As shown in the figure, the capacitor 3740 includes one of the first conductive portions 3755 and the second conductive portion 37.
Charges can be stored in many electric fields generated between any one of 65.

FIG. 37D-B is a schematic diagram showing a MEMS capacitor 3770 using an ELR material. The MEMS capacitor 3770 is formed on or attached to a substrate (not shown), and a plurality of first capacitors
A first conductive element 3780 having a first conductive portion 3782; and a second conductive element 3790 having a plurality of second conductive portions 3792 spaced from the plurality of first conductive portions 3782.
As shown in the figure, the second conductive element 3790 is in a direction toward the first conductive element 3780.
And / or the translation between the elements can increase and / or decrease the capacitance between the elements when the movement increases and / or decreases the area between the conductive parts. The second conductive element 3790 rotates with respect to the first conductive element 3780,
When the region between the conductive parts increases and / or decreases due to the rotation, the capacitance between the elements can be increased and / or decreased.

In some examples, the ELR materials described herein carry and / or propagate charge through apertures in the ELR material. Thus, in these examples, using ELR material as the conductive element may collect charge in the conductive element or plate in individual rows or sections that generally correspond to openings in the ELR material.

38A-B are cross-sectional views of the capacitor obtained at line BA in FIG. 37B-B. The capacitor 3800 includes a first conductive element 3810a having an opened ELR material 3814a, and the opened ELR material 381.
A second conductive element having a modifying layer 3812b coupled to 4a and an open ELR material 3814b
3810b and a modifying layer 3812b coupled to the opened ELR material 3814b. First conductive element 3810A is separated from second conductive element 3810b by dielectric layer 3820.

After applying a potential difference between the first conductive element 3810A and the second conductive element 3810b, the charge 383
As 0 moves toward the dielectric layer 3820, an electric field is generated between the elements and between the dielectric layers 3820. However, since the charge is contained within the opening, the charge is ELR material 381.
Collect in a group of charges 3830 that are generally separated from each other by open walls 3835 in 4a.

38B-B is a cross-sectional view of the capacitor obtained by the BB line in FIG. 37B-B. The group charge is
A strip of charge 3842 can be formed on or near the surface of the modifying layer 3840 or opening wall, separated by the opening wall 3844 of the material. Thus, the charge in the ELR material forms a strip and / or group of charges in the conductive element of the capacitor in response to the electric field in the capacitor.

In some examples, the ELR material that forms the conductive element of the capacitor is a current at a temperature between the transition temperature (eg, ~ 80 to 135K) and room temperature (eg ~ 275K to 313K) of conventional HTS materials. It can exhibit very low resistance to flow. In these examples, ELR-based capacitors with capacitors and / or ELR-based devices are used to cool the capacitors to the critical temperature for the modified ELR material type used in the capacitors. A cooling system (not shown) such as a refrigerator or cryostat can be included. For example, the cooling system may be a system capable of cooling the condenser to a temperature similar to that of liquid chlorofluorocarbon, to a temperature similar to that of ice, and to other temperatures described herein. That is, the cooling system can be selected based on the type and structure of ELR materials used in ELR-based capacitors and / or ELR-based devices.

As described herein, in some examples, a conductive element of a capacitor (eg,
The plate) is made of modified ELR material and therefore exhibits a very low resistance to the carried current. The conductive elements can be formed of nanowires, tapes or foils, and / or wires.

In forming the ELR wiring, a plurality of ELR tapes or foils may be sandwiched together to form a high capacity line. For example, the coil is supported by the support structure and the support structure
One or more ELR tapes or foils can be included.

In addition to ELR wires, capacitors can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, ELR material is 50
It can be formed into nanowires having a nanometer width and / or depth. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, E
The LR material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

In addition to nanowires, ELR tapes or foils can be utilized with the capacitors and devices described herein. There are various techniques for making and manufacturing tapes and / or foils of ELR materials. In some examples, the technique includes depositing YBCO or other ELR material on a flexible metal tape coated with a metal oxide of the buffer to form a coated conductor. During processing, the texture can be rolled assisted biaxial texture can be introduced into the metal tape itself using the substrate (RABiTS) process, or alternatively, the textured ceramic buffer layer is ion beam assisted. It can be deposited using an ion beam on an untextured alloy substrate, such as using an evaporation (IBAD) process. The addition of the oxide layer prevents metal diffusion from the tape to the ELR material. Other techniques can utilize chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy per atomic layer (ALL-MBE), and other solution deposition techniques to produce ELR materials. .

Thus, modified ELR films can be stored in tapes, foils, rods, strips, nanowires, thin films, other shapes or structures and / or in conductive elements such as plates It may be formed inside. That is, for some capacitors, some suitable geometric shapes are described and shown herein, but many other shapes are possible. These other shapes include different patterns, configurations, and layouts for each length and / or width in addition to material thickness, use of different layers, and other three-dimensional structural differences.

In some examples, the type of material used as the ELR material can be determined by the type of application that utilizes the ELR material. For example, some applications can utilize ELR materials with a BSCCO ELR layer, but some applications
YBCO layer can be used. That is, the ELR materials described herein may be formed in a specific structure (eg, tape or nanowire) or may be formed from a specific ELR material.

Various manufacturing processes can be employed to form the ELR-based capacitors described herein. In some examples, ELR nanowire conductive elements are deposited on a positioned substrate. In some examples, the ELR tape is placed or secured over the substrate, non-conductive element, and / or conductive element. One of ordinary skill in the art can appreciate that other manufacturing processes may be utilized when manufacturing and / or forming the capacitors described herein.

As described herein, many devices and systems operate at high or ambient temperatures.
Capacitors such as modified, open and / or other new ELR capacitors can be incorporated that exhibit very low resistance. In the next section, some exemplary devices, systems, and / or applications are described. Those skilled in the art will appreciate that other devices, systems, and / or applications can also utilize modified ELR capacitors.

In some examples, the tuned or resonant circuit can use the ELR capacitors described herein. In general, a tuning circuit includes both a capacitor and an inductor for selecting information in a specific frequency band. For example, radio receivers rely on variable capacitors to tune the base station radio frequency to the radio receiver.

FIG. 39-B is a schematic diagram illustrating a tuned or resonant circuit 3900 having other components such as an ELR capacitor, inductor 3910 and inductor 3920. FIG. Analog circuits, such as those used in signal processing applications, can utilize the capacitors described herein. These circuits can include capacitors along with other components (eg, LC circuits, RLC circuits, etc.). In some embodiments, circuit 3900 may be a tuned or resonant circuit that emphasizes or filters the signal frequency. In some embodiments, the circuit 3900 can remove residual feather noise in large scale power generation applications. In some embodiments, circuit 3900 may be a tuning circuit used in radio reception and broadcasting. One skilled in the art will appreciate that the circuit 3900 can be implemented in many other applications not described herein.

In some examples, the energy storage component can use an ELR-based capacitor as described herein. For example, capacitors are used in electronic devices to store electrical energy when disconnected from a charging circuit that exhibits characteristics similar to batteries and to maintain power while the battery is being replaced.

FIG. 40-B is a schematic diagram illustrating a storage element 4000 having an ELR capacitor. The storage element 4000 is representative of a super capacitor and includes a first electrode 4010, a second electrode 4020, and a separation layer. The separation layer 4030 includes a first electrolyte solution 4045 containing a charge 4040 and a second electrolyte solution containing a charge 4050.
Separate 4055. Such supercapacitors can use the ELR-based materials described herein to store energy for various uses such as electric vehicles and grid applications.

In some examples, the coupling component can use an ELR-based capacitor as described herein. For example, an ELR base capacitor facilitates capacitive coupling in the circuit so that the capacitor can pass an AC signal and a DC signal through the block. As another example, an ELR base capacitor can function as a decoupling capacitor that suppresses noise and transient signals between circuit elements.

FIG. 41-B is a schematic diagram showing a coupling element 4100 having an ELR capacitor 4130 and a resistor 4140. The coupling element 4100 receives the input signal 4110, adjusts the input signal based in part on the time to charge the capacitor relative to the time constant of the input signal, and outputs the adjusted signal 4120. Such a coupling circuit can pass audio signals to a wireless system using the ELR-based capacitors described herein.

In some examples, a pulsed power system can use the ELR-based capacitors described herein. For example, large specially configured groups of low-inductance high-voltage capacitors include electromagnetic forming, Marx generators, pulsed lasers, pulse forming networks, radar, fusion, particle accelerators, rail guns, coil guns and other applications. It can be used to supply large current pulses for pulsed power applications.

FIG. 42-B is a schematic diagram illustrating a pulsed power system 4200 having an ELR capacitor. The pulse power system 4200 includes a capacitor bank 4100 formed of a plurality of capacitors 4220. Capacitor bank 4100 provides power pulses to various output 4230 applications when discharged. For example, the pulse power system 4200 may be a Marx bank. In Marxbank, capacitors such as ELR base capacitors are charged in parallel with a moderate voltage and discharged in series by triggering a spark gap that provides a high voltage to the load. In some examples, a timing element, an ELR base capacitor as described herein, can be used.

FIG. 43-B shows a timing element, such as an element configured as an astable multivibrator 4310 that provides a pulse train to the speaker 4320 via the ELR base capacitor 4330.
FIG. The timing element 4300 includes a 555 timer, an ELR base capacitor 4330, and a speaker 4320. Capacitor 4330 is stable while blocking DC signal
AC signal can be supplied to the speaker.

Of course, other systems and devices can use the ELR-based capacitors described herein. For example, a power input system, a power factor correction system, a noise filter, a snubber, a motor starter, a signal processor, a sensor, a measuring instrument, and other touch input devices, a human interface element, a neural network, and the like.

In some embodiments, a capacitor comprising a modified ELR material can be described as follows.

A capacitor comprising: a first plate formed from a modified ELR material; and a second plate formed from a modified ELR material, the modified ELR material comprising: a layer of the ELR material; A capacitor that alters one or more operating characteristics of the layer of ELR material.

Forming a first plate of modified ELR material; forming a second plate of modified ELR material; and placing the first plate at a fixed distance from the second plate. A method of forming a capacitor, comprising:

A first modified very low resistance (ELR) element and a second modified ELR element disposed at a distance from the first modified ELR element. Capacitor.

A first plate formed from a modified ELR material; a second plate formed from a modified ELR material; and a dielectric disposed between the first plate and the second plate. A capacitor comprising: the modified ELR material comprising: a layer of ELR material; and a modifying layer that alters one or more operating characteristics of the layer of ELR material .

A method of forming a capacitor comprising the steps of forming a first plate of modified ELR material, forming a second plate of modified ELR material, and removing the first plate from the second plate. And disposing a dielectric between the first plate and the second plate. A method comprising: disposing a constant distance; and disposing a dielectric between the first plate and the second plate. .

A first modified very low resistance (ELR) element and a second modified ELR spaced a distance from said first modified very low resistance (ELR) element A capacitor comprising: an element; and a dielectric material disposed between the first modified ELR element and the second modified ELR element.

A substrate, a first conductive element deposited on the substrate and formed of a modified ELR material, and an EL deposited and modified on the substrate proximate to the first conductive element
A capacitor comprising a second conductive element formed of an R material, wherein the modified ELR material modifies a layer of ELR material and one or more operating characteristics of the layer of ELR material And a capacitor layer.

A method of forming a capacitor, comprising depositing a first conductive element formed from a modified ELR material on a substrate, proximate to the first conductive element on the substrate,
Depositing a second conductive element formed from a modified ELR material.

A first modified very low resistance (ELR) element deposited on a substrate;
A second modified ELR element deposited on the substrate proximate to the modified ELR element and spaced a distance from the first modified ELR element; A capacitor characterized by having.

A first conductive element formed from a modified ELR material; and a second conductive element formed from a modified ELR material and configured to move relative to the first conductive element. A capacitor comprising: the modified ELR material comprising a layer of ELR material and a modifying layer that alters one or more operating characteristics of the layer of ELR material.

A capacitor including a first modified very low resistance (ELR) element, a second modified ELR element, and a positioning component, wherein the positioning component is the first modified The second for very low resistance (ELR) elements
A capacitor characterized in that it is configured to move a modified ELR element.

A conductive element for use in a MEMS-based capacitor, comprising: a first layer of ELR material; and a second layer of material that alters the phonon characteristics of the ELR material.

A circuit including an inductor and a capacitor, wherein the capacitor includes a first conductive element formed from a modified ELR material and a second conductive element formed from a modified ELR material, Circuit.

A capacitor used in a signal processing apparatus having a first conductive element formed from a modified ELR material and a second conductive element formed from the modified ELR material, wherein the modified ELR material A capacitor comprising: a layer of ELR material; and a layer that modifies one or more operating characteristics of the layer of ELR material.

A capacitor configured to exchange energy having an inductor in a circuit, the first conductive element formed on a substrate, and formed on the substrate and disposed adjacent to the first conductive element. And a second conductive element, wherein the first conductive element and the second conductive element exhibit a very low resistance to charge at a temperature of 150K or higher at a standard pressure.

A first conductive element formed from a modified ELR material; a second conductive element formed from a modified ELR material; and a separation layer disposed between the first conductive member and the second conductive element; The ultra capacitor | condenser characterized by including.

A first conductive element formed from the opened ELR material, a second conductive element formed from the opened ELR material, and a separation disposed between the first conductive element and the second conductive element An ultracapacitor comprising: a layer;

A coupling circuit including a resistor and a capacitor, wherein the capacitor is modified
A first conductive element formed from an ELR material and a second conductive element formed from a modified ELR material, the modified ELR material comprising: a layer of ELR material; and a layer of the ELR material. 1
A coupling circuit characterized in that it comprises one or more layers for modifying one or more operating characteristics.

A coupling circuit including a resistor and a capacitor, the capacitor comprising: a first conductive element formed from an open ELR material; and a second conductive element formed from the open ELR material. The opened ELR material comprises a layer of ELR material and the EL
A coupling circuit comprising: a modifying layer that alters one or more operating characteristics of the layer of R material.

A pulse power supply system including a capacitor bank, wherein each of the capacitors in the capacitor bank includes a first conductive element formed from a modified ELR material and a second conductive element formed from the modified ELR material And the modified ELR material comprises ELR
A pulsed power system comprising a layer of material and a modifying layer that alters one or more operating characteristics of the layer of ELR material.

A pulse power supply system including a capacitor bank, wherein each of the capacitors in the capacitor bank includes a first conductive element formed from ELR material and a second conductive element formed from the ELR material, The pulsed power supply system, wherein the ELR material includes an open ELR material and a modifying layer that modifies one or more operating characteristics of one or more layers of the open ELR material.

A sensor including a capacitor, wherein the capacitor includes a first conductive element formed from a modified ELR material and a second conductive element formed from a modified ELR material, the modified ELR A material comprising: a layer of ELR material; and a modifying layer that alters one or more operating characteristics of the layer of ELR material.

A sensor including a capacitor, the capacitor including a first conductive element formed from an ELR material and a second conductive element formed from an ELR material, the ELR material comprising:
A sensor comprising: a layer of altered ELR material and a layer that alters one or more operating characteristics of the layer of opened ELR material.

Chapter 6 Inductors Formed from ELR Materials Refer to Figure 1-36 and Figures 37-C through 43-C for the description of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Inductors such as air-core inductors and magnetic core inductors include components formed from very low resistance (ELR) materials such as modified ELR materials, apertured ELR materials, and / or other new ELR materials It is described. In some examples, the inductor includes a nanowire coil formed from a core and ELR material. In some examples, the inductor includes a core and a coil formed of ELR material, such as ELR tape or foil. In some examples, an inductor formed using a thin film ELR material. The ELR material provides and / or exhibits a very low resistance to current at temperatures higher than the normal temperature associated with conventional high temperature superconductivity (HTS), improving the operating characteristics of the inductor at higher temperatures.

In some examples, the ELR material is manufactured based on the type of ELR material, the application of the ELR material, the size of the component using the system, the operating requirements of the device, system and / or apparatus using the ELR material. Thus, during inductor or inductor-based device design and manufacture, the material used as the base layer of the ELR component and / or the material used as the modifying layer of the ELR component has various considerations, operating characteristics and / or Or it can be selected based on manufacturing characteristics.

Various devices, applications, and / or systems can use modified, apertured, and / or new ELR-based inductors. In some examples, ELR inductors are used in tuned or resonant circuits and related applications. In some examples, transformers and related applications use ELR inductors. In some examples, energy storage devices and related applications use ELR inductors. In some examples, current limiting devices such as current limiters and related applications use ELR inductors.

FIG. 37-C shows an air core inductor 37 that is open and / or formed from a new ELR material.
FIG. Inductor 3700 includes a coil 3710 and an air core 3720. When the coil 3710 carries current (eg, in a direction toward the right side of the page), a magnetic field 3730 is generated in the air core 3720 (ie, the region where the core is found). The coil is formed on at least a portion of an ELR material, such as an ELR film, having an ELR material base layer and a modifying layer formed on the ELR material base layer. A variety of suitable ELR films are described in detail herein.

A battery or other power source (not shown) applies a voltage to the ELR coil 3710 and the current flows to coil 371.
Let it flow within 0. The coil 3710 formed from ELR material is almost or completely resistant to current flow at temperatures higher than those used in conventional HTS materials, such as room temperature or ambient temperature (eg, ˜21 ° C.) There is no. The current flowing in the coil is energy,
A magnetic field is generated in the core region 3720 that is used to transport limit energy and the like.

Since the inductor 3700 includes a coil 3710 formed from a very low resistance material (ie, a modified ELR film), the inductor may behave similarly to an ideal inductor. Here, the coil 3710 has little or no loss due to winding or series resistance normally found in inductors with conventional conductive coils (eg, copper coils), regardless of the current through the coil 3710. That is, inductor 3700 exhibits a very high quality (Q) factor (eg, nearly infinite). The high quality (Q) factor is the ratio of inductive reactance to resistance at a given frequency, where Q = inductive reactance / resistance.

In some examples, ELR coils provide very low resistance to current flow at temperatures between the transition temperature of conventional HTS materials (eg, about 80-135K) and room temperature (eg, at 294K). In these examples, the inductor includes a cooling system (not shown) such as a refrigerator or cryostat as used to cool coil 3710 to the critical temperature of the type of ELR material utilized by coil 3710. be able to. For example, the cooling system is liquid chlorofluorocarbon (TM)
It may be a system that can cool coil 3710 to a temperature similar to that of ice, a temperature similar to that of ice, or a temperature similar to other temperatures described herein. That is, the cooling system can be selected based on the type and structure of the ELR material used in the coil 3710.

In some examples, air core 3720 does not include additional material, and inductor 3700 is a coil without a physical core, such as a stand-alone coil (eg, the coil shown in the figure).
In some examples, air core 3720 is formed of a non-magnetic material (not shown) such as a plastic or ceramic material. The material and shape of the core can be selected based on various factors. For example, if you select a core material that has a permeability higher than that of air,
Generally increases the density of the magnetic field 3730 generated and thus increases the inductance of the inductor 3700. In another example, the choice of core material may be governed by the desire to reduce core losses within high frequency applications. One skilled in the art will appreciate that the core is formed in many different materials and from many different shapes to achieve the desired and / or operational characteristics.

As is known in the art, the configuration of the coil 3710 can affect operating characteristics such as inductance. For example, the number of turns of the coil, the cross-sectional area of the coil, the length of the coil, etc. may affect the inductance of the inductor. Although not shown in the configuration, the inductor 3700 is used to achieve operating characteristics (eg, inductance value)
And it can be configured in various ways to reduce unwanted effects (eg, skin effects, proximity effects, parasitic capacitances).

In some examples, the coil 3710 can include multiple turns positioned parallel to each other. In some examples, the coil can include turns wound at different angles from each other. Thus, the coil 3710 is a cobweb pattern formed of a honeycomb, a basket weave pattern, a wave winding continuously bent in a cross at various angles, and a flat spiral coil in which the coils are spaced apart from each other Can be formed in a variety of different configurations such as litz wire, pie winding, and various strands that are insulated from each other to reduce arc resistance. These techniques may be used to increase the self-resonant frequency and quality factor (Q) of the inductor.

In addition to air core inductors, magnetic core inductors, such as inductor 3800, can also utilize the modified, open, and / or new ELR materials described herein. FIG. 38-C is a schematic diagram illustrating a magnetic core inductor 3800 using ELR material. Inductor 3800 includes a coil 3810 and a magnetic core 3820, such as a core made of ferromagnetic or ferromagnetic material. Similar to the inductor 3700 of FIG. 37-C, a magnetic field 3830 is generated in the core 3820 when current is carried by the coil 3810. The coil is formed at least partially from an ELR film such as a film having an ELR material base layer and a layer to be changed formed on the base layer. A variety of suitable ELR films are described in detail herein. The coil 3810 formed of ELR film has little resistance to current flow at temperatures higher than those used in conventional HTS materials, such as room temperature or ambient temperature (eg, at ~ 21 ° C) Or not at all. The current flow in the coil is
Within the core 3820, a magnetic field 3820 is generated that is used to store energy, transfer energy, or limit energy.

A magnetic core 3820 formed from a ferromagnet or a ferromagnetic material increases the inductance of the inductor 3800 because the permeability of the magnetic material in the generated magnetic field 3830 is higher than the permeability of air, and thus the magnetic material 3830 Further support the formation of magnetic field 3830 by magnetization. For example, the magnetic core can increase the inductance by a factor of 1000 or more.

Inductor 3800 can use a variety of different materials within magnetic core 3820. In some examples, the magnetic core 3820 is formed of a ferromagnetic material such as iron. In some examples,
The magnetic core 3820 is formed of a ferromagnetic material such as ferrite. In some examples, the magnetic core 3820 is formed of a laminated magnetic material such as a silicon steel laminate, METGLAS, or other material. One skilled in the art will appreciate that other materials can be used depending on the needs and requirements of the inductor 3800.

Also, the magnetic core 3820 (and hence the inductor 3800) can be configured in a variety of different shapes. In some examples, the magnetic core 3820 may be a rod or a cylinder. In some cases, the magnetic core 3820 may be a donut or toroid.
In some cases, the magnetic core 3820 is movable and enables the inductor 3800 to achieve variable inductance. Depending on the needs and requirements of the inductor 3800,
It will be appreciated that other shapes and configurations can be used. For example, magnetic core 38
20 can be configured to limit various drawbacks, such as eddy currents and / or hysteresis, and / or core losses due to inductance nonlinearity.

Thus, in some instances, modified ELR materials such as modified ELR films and / or
Alternatively, the coil 3710 of the inductor 3700 or the coil 3810 of the inductor 3800 using the component can be reduced by removing or eliminating the resistance to current in the coil.
Improve Q value.

As described herein, in some examples, the inductor coil is a modified ELR.
It is made of ELR material such as material, apertured ELR material, new ELR material, etc., so it shows very low resistance to carried current. Figures 39A-C show inductors 39 using ELR wires.
FIG. Inductor 3900 is an ELR as described herein, such as a modified ELR film.
It includes a coil 3902 formed as an ELR wire of components.

In forming the ELR wire, a plurality of ELR tapes or foils may be sandwiched together to form a high capacity line. For example, the coil can include a support structure and one or more ELR tapes or foils supported by the support structure.

In addition to ELR wires, inductors can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, ELR material is 50
It can be formed into nanowires having a nanometer width and / or depth. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, E
The LR material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

In addition to nanowires, ELR tapes or foils can be utilized with the inductors and devices described herein. Figure 39B-C shows an inductor 3910 using ELR tape or foil
FIG. Inductor 3910 includes an iron core and a coil 3914 such as a core 3912 formed of ELR tape.

There are various techniques for producing and manufacturing tapes and / or foils of ELR materials. In some examples, the technique includes depositing YBCO or other ELR material on a flexible metal tape coated with a buffer metal oxide to form a coated conductor. During processing, the texture can be introduced into the metal tape using a rolling assist, biaxial textured substrate (RABiTS) process or the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam assisted deposition (IBAD) process on an untextured alloy substrate. The addition of the oxide layer prevents metal diffusion from the tape into the ELR material. To produce ELR tape, chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (ALL-MBE)
), And other techniques such as other solution deposition techniques may be utilized.

In some examples, thin film inductors can utilize the ELR components described herein. FIGS. 39C-C are schematic diagrams illustrating an inductor 3920 that uses ELR thin film components, such as modified, opened, and / or new ELR components. Inductor 3920 includes an ELR coil 3922 and an optional magnetic core 3926 formed on a printed circuit board 3924 or other suitable substrate (eg, LaSrGaO). Coil 3922, a nanowire placed on or on a modified ELR film or substrate etched into a board 3924 or substrate, can vary depending on the needs of the device or system using the inductor. It can be formed in configuration and / or pattern. Further, the optional magnetic core 3926 may be etched into the substrate 3924 as shown, or may be a flat core (not shown) disposed above and / or below the coil 3922. .

Thus, ELR materials move current from one point to another to generate wires, tapes, foils, rods, strips, nanowires, thin films, other coil / spiral shapes, structures, and / or magnetic fields It may be formed into a geometric shape that can be carried or carried.
That is, although some suitable geometric shapes for the inductor are shown herein, many other shapes are possible. These other shapes include material thickness differences, the use of different layers,
In addition to other 3D structure differences, different patterns, different configurations or different lengths and / or
Or include a layout for the width.

In some examples, the type of material used for the ELR material can be determined by the type of application that utilizes the ELR material. For example, in some applications, BS
The CCO ELR layer is used, but the YBCO ELR layer can be used in other applications. That is, the ELR materials described herein are based on a specific material (eg, YBCO or BSCCO) and a specific structure (eg, wire, tape, foil, thin film) based on the type of machine or component that utilizes the ELR material. , And / or nanowires).

A variety of processes can be used to manufacture inductors such as inductors 3900, 3910, and / or 3920. In some examples, the core is formed, maintained, secured, housed and / or arranged. The core can take various shapes and configurations. Exemplary configurations include a cylindrical rod, a single “I” shape, a “C” or “U” shape, an “E” shape, a pair of “E” shapes, a pot shape, a toroid shape, a ring, or a bead shape, a plane Shape, etc. The core can be formed of a variety of nonmagnetic and magnetic materials. Exemplary materials are iron or soft iron, silicon steel,
Including various laminated materials, silicon alloys, carbonyl iron, iron powder, ferrites, ceramics, glass, amorphous metals, ceramics, plastics, METGLAS, air and so on.

In addition, the coil, tape, or thin film formed from the ELR nanowire is set to a desired shape or pattern and bonded to the formed or maintained core. In some examples, there is no core at all and the modified ELR nanowire is configured in the desired shape or pattern. In some examples, the modified ELR nanowire coil is etched directly on the printed circuit board, formed, or etched in an integrated circuit, and the planar magnetic core is positioned relative to the etched coil Is done. Those skilled in the art will appreciate that other manufacturing processes may be utilized when manufacturing and / or forming the inductors described herein.

As described herein, many devices and systems have been modified to exhibit very low resistance values at high or ambient temperatures, such as temperatures from 150K to 313K, or higher than 313K.
Opened and / or new ELR inductors can be utilized, used and / or incorporated. That is, an apparatus or system that utilizes energy stored in a magnetic field generated from a current can substantially incorporate an ELR inductor as described herein. For example, a system for transporting, converting and / or storing energy, information and / or objects may use the ELR inductors described herein. In the next section, some exemplary devices, systems, and / or applications are described. One skilled in the art will appreciate that other devices, systems, and / or applications can also utilize the ELR inductors described herein.

In some examples, analog circuits, such as those used in signal processing applications, can utilize the inductors described herein. Figure 40-C shows the ELR base inductor 4
1 is a schematic diagram showing a tuning or resonant circuit 4000 having a 010 and a capacitor 4020. FIG. Such circuits can include inductors along with other components (eg, LC circuits, RLC circuits, etc.). In some embodiments, circuit 4000 may be a tuned or resonant circuit that amplifies and / or attenuates the signal frequency. In some embodiments, the circuit 4000 can remove residual wing sounds (eg, by filtering harmonics associated with a 60 Hz signal) in large scale power generation applications. In some embodiments, circuit 4000 may be a tuning circuit used for radio reception and broadcasting. One skilled in the art will appreciate that the circuit 4000 can be implemented in many other applications not described herein.

Utilization of a very low resistance material, such as the modified ELR material described herein, can provide various advantages to circuit 4000. For example, circuits with ELR inductors used in magnetometers (eg, SQUID) do not rely on the usual expensive cooling system of magnetometers that traditionally use HTS superconducting elements, but the magnetometer has a very small magnetic field ( Can be measured (for example, on the order of 1 fluxon).

In some examples, transformers and other energy transport devices and systems can utilize the inductors described herein. Figure 41-C shows transformer 4 with ELR inductor
FIG. The transformer 4100 is a primary winding 4 having a magnetic core 4110 and a primary winding number 4125.
120 and a secondary winding 4130 having a secondary number of turns 4135. Primary winding 4120 and secondary winding 4130 are formed from a material of ELR nanowires such as a modified ELR. In some examples, the transformer 4100 may be part of a commercial power grid. In some examples, the transformer 4100 may be part of a device or other electronic device that boosts and / or steps down the supply voltage during operation. In some examples, the transformer 4100 may be a signal or audio transformer. Those skilled in the art will appreciate that transformer 4100 may be implemented in many other applications and devices not described herein.

The use of very low resistance materials such as the modified ELR materials described herein can be used with transformer 4100
And / or can provide various advantages for various applications. For example,
Transformers that utilize ELR material modified in the coil can avoid the problems associated with traditional superconducting materials, such as high costs, due to expensive cooling systems, while minimizing energy loss in the transformer Less resistance loss, which can have a significant impact on the cost of operation.

In some examples, ELR inductors described herein can be utilized in energy storage devices such as superconducting magnetic energy storage (SMES) systems and other magnetic storage systems. FIG. 42-C is a schematic diagram illustrating an energy storage system 4200 having an ELR inductor. The energy storage system 4200 is a storage component 42 having an induction coil 4215.
10 or a power conditioning system 4220 having a coil and an inverter rectifier 4225. Storage component 4210 stores energy in a magnetic field generated by inductor 4215 formed from a modified ELR material. Power conditioning system 4220, storage component 42
Receives energy from 10, adjusts the received energy (eg, converts stored direct current to alternating current), and supplies the adjusted energy to various power sources such as power supply 4230. One skilled in the art will appreciate that the energy storage system 4200 may be used in many other applications and devices not described herein.

Utilization of very low resistance materials, such as the modified ELR materials described herein, can provide various features and advantages for the energy storage system 4200 and a variety of different applications. For example, a conventional SMES system has a minimal amount of loss of stored energy compared to other energy storage systems, but maintains a high temperature superconductor at temperatures as low as liquid nitrogen in a conventional SMES system. Cost issues and other issues related to that have banned wide adoption. On the other hand, the modified ELR inductors described herein are associated with conventional SMES systems because they exhibit ELR characteristics at very high temperatures, such as between liquid chlorofluorocarbon and room temperature, or higher. It offers the same benefits as a conventional SMES system (eg, energy loss) without problems (eg, refrigerator cost).

In some examples, an electrical transmission system can utilize the ELR materials described herein. FIG. 43-C is a schematic diagram illustrating a current limiting system 4300, such as a current limiter (FCL) having an ELR inductor. The current limit system is a current limiter 4310 consisting of an ELR inductor 4315
including. A current limiter 4310, such as a series resistance limiter, is placed between the line 4320 and the load 4330 and absorbs most of the energy in the event of a system 4300 fault and acts as a trigger coil by shunting the fault to the resistance 4330 To do. Those skilled in the art will recognize that the electrical transmission system is in many other applications and devices not specifically described in Figure 43-C.
It will be understood that ELR inductors can be implemented.

The use of very low resistance materials, such as the modified, apertured, and / or new ELR materials described herein, exhibits very low resistance to electrical currents within the system, so electrical transmission systems and various Various benefits to the application can be provided. For example, ELR inductors can function to limit the fault current of the system during a fault condition without adding impedance to the system during normal operating conditions.

In some examples, some or all of the systems and devices described herein may be low cost in applications where the ELR material used by the application exhibits a very low resistance at temperatures below ambient temperature. The use of the following cooling system is described. As described herein, in these examples, the application is a cooling system (such as a system that cools the ELR inductor to the same temperature as the ice temperature, or other temperature, the same temperature as the liquid freon. (Not shown). The cooling system can be selected based on the type and structure of ELR material utilized by the application and / or the inductor used by the application.

In addition to the systems, devices, and / or applications described herein, one of ordinary skill in the art will recognize that other systems, devices, and applications that include inductors have been modified, opened, and It will be appreciated that new ELR inductors can be utilized.

In some embodiments, an inductor comprising a modified ELR material can be described as follows.

An inductor having an air core and a modified very low resistance (ELR) element set in a coil shape at least partially surrounding the air core, the modified ELR element Is formed of a modified ELR film having a first layer made of ELR material and a second layer made of the modifying material bonded to the ELR material of the first layer. Inductor.

Maintaining a substrate, a coil embedded in the substrate, a first magnetic core disposed on the surface of the substrate, and the coil embedded in the substrate at a temperature lower than the ambient temperature of the substrate A cooling component configured to: wherein the coil comprises:
An apparatus comprising: a first portion having a very low resistance (ELR) material; and a second portion coupled to the first portion that reduces the resistance of the ELR material.

An apparatus comprising: a magnetic core; and a three-dimensional coil at least partially wrapped around the magnetic core, the three-dimensional coil comprising a first portion having a very low resistance (ELR) material; And a second portion coupled to the first portion for reducing the resistance of the ELR material.

An inductor configured to be disposed between a load and a line, wherein the inductor is formed of a modified ELR material having a first layer formed of ELR material, and a material that changes a resistance of the ELR material A second layer, wherein the inductor is configured not to resist current passing through the inductor at a normal load level but to resist current passing through the inductor at a fault level. Inductor.

A storage component configured to store energy in a magnetic field generated by the inductor, including an inductor formed of a modified ELR film; and power configured to regulate energy received from the storage component An energy storage system comprising a conditioning component and a power component configured to supply the regulated energy to a recipient.

An inductor having a substrate and a modified very low resistance (ELR) film formed on a surface of the substrate, wherein the modified ELR film comprises a first layer of ELR material; Said
An inductor comprising a second layer of a material to be modified bonded to the ELR material.

A transformer including a primary part and a secondary part, wherein the primary part has a first magnetic core and a first number of turns, and is configured in a coil shape at least partially surrounding the first magnetic core A first modified very low resistance (ELR) element, wherein the secondary part is a second
A magnetic core and a second modified very low resistance (ELR) element configured in a coil shape having a second number of turns and at least partially surrounding the magnetic core; The first modified ELR element and the second modified ELR element are the first of the ELR materials.
A transformer formed from a modified ELR material having a layer and a second layer of modifying material coupled to the first layer of ELR material.

An inductor for use in a signal processing device having a magnetic core and a three-dimensional coil at least partially surrounding the magnetic core, the three-dimensional coil having a very low resistance (ELR) An inductor comprising: a first portion having a material; and a second portion coupled to the first portion that reduces a resistance of the ELR material.

Chapter 7-Transistors Made of ELR Materials Refer to Figures 1-36 and Figures 37-D through 44-D for descriptions in this chapter. Accordingly, all reference numbers included in this chapter refer to components found in these figures.

Transistors and other similar devices have been described, such as logic devices including components formed of modified very low resistance (ELR) and / or open ELR materials. As described herein, the modified and / or open ELR material is charged at an elevated temperature, such as a temperature above 150K, at ambient or standard pressure (eg, electron flow).
Always exhibit low resistance and / or very high conductance of charge.

In some examples, the device includes a junction formed of a semiconductor element and an ELR element. For example, devices that utilize ELR element-semiconductor junctions include Josephson junctions, bipolar junction transistors, field effect transistors (FETs), amplifiers, switches, logic gates, microprocessor elements, microprocessors, and the like.

In some examples, the ELR material uses the type of material, the application of the modified ELR material, the size of the component, and / or the device that uses the ELR material, the operating requirements of the component, and / or the ELR material Manufactured based on devices. For example, materials used as the base layer of ELR material-based electrodes during transistor design and manufacturing, and / or EL
The material used as the modifying layer of the R material-based electrode can be selected based on various considerations and desired operating and / or manufacturing characteristics.

Thus, in some examples, devices using ELR material-semiconductor junctions can be made faster and more reliably than conventional devices because the conductive elements in the devices do not resist current flow. . Furthermore, the device can be designed with fewer elements, reducing the costs associated with manufacturing.

As described herein, some or all of the modified, opened, and / or other new ELR material is a junction, such as a junction formed of at least one conductive element and at least one semiconductor. Can be utilized by transistors, associated devices and systems.

FIG. 37-D is a schematic showing a junction between a very low resistance (ELR) element and a semiconductor. The junction 3700 includes an ELR base element 3710 and a semiconductor 3720. The semiconductor 3720 may be formed of a known semiconductor material such as silicon or gallium arsenide (GaAs).

In some examples, the device 3705 may use a junction 3700. The ELR material-semiconductor junction 3700 may combine ELR-based electronics and semiconductor electronics. For example, the junction 3700 can act to couple a high speed single flux logic (RSFL) circuit to a semiconductor circuit. That is, junction 3700 is a Josephson Field Effect Transistor (JOFET)
Or part of another transistor that relies on the Josephson effect, so that current flows between the two weakly coupled ELR elements.

FIG. 38-D is a schematic diagram illustrating a Josephson junction 3800 that uses one or more ELR elements. Josephson junction 3800 is connected to the second ELR element 3830 by the semiconductor 3820.
Including a first ELR element 3810 coupled to the. The relative size of the elements can vary depending on the application. That is, in some cases, the semiconductor 3820 is an ELR element 3810.
And / or may be formed with a smaller thickness or other geometric shape relative to the ELR element 3830. In addition, the ELR element 3810 can be formed with a thickness or other geometric shape different from the thickness of the semiconductor 3820 and / or the ELR element 3830 and / or other geometric shapes.

Josephson Junction 3800 uses a semiconductor 3830 as the "insulator" between the first ELR element 3810 and the second ELR element 3830, and the junction switching event associated with the junction is associated with a single fluxon measurement. Therefore, it can function as a single-electron transistor that performs accurate measurement.

For example, the Josephson junction 3800 can be used as a qubit in a high-speed single flux quantum (RSFQ) component, a sensing component, and / or other application as a superconducting tunnel junction (STJ) detector.

In some examples, the ELR material in the junctions 3700, 3800 is a conventional HTS material transition temperature (eg, 80-135K) and ambient temperature (such as temperatures between 150K and 313K, or higher). For example, it can exhibit a very low resistance to current flow at temperatures between 275K and 313K). In these examples, ELR elements and / or ELR-based devices using ELR elements are used to cool the ELR element to the critical temperature of the modified ELR material type used by the device, such as a refrigerator or cryostat Other cooling systems (not shown) may be used. For example, the cooling system can be up to the same temperature as the boiling point of Freon, up to the same temperature as the melting point of water, down to an ambient temperature surrounding the ELR element or related device, or as described herein. It may be a system that can cool the ELR element to other temperatures. That is, the cooling system can be selected based on the type and structure of ELR material used in the ELR element or the ELR-based device.

As described herein, in some examples, conductive elements formed of ELR materials in ELR-based junction devices exhibit very low resistance to charge. These conductive elements can be formed from nanowires, tapes or foils, wires, and the like.

There are various techniques for producing and manufacturing tapes and / or foils of ELR materials. In some examples, the technique includes depositing YBCO or other ELR material on a flexible metal tape coated with a buffer metal oxide to form a coated conductor. During processing, the texture can be rolled assisted biaxial texture can be introduced into the metal tape itself using the substrate (RABiTS) process, or alternatively, the textured ceramic buffer layer is ion beam assisted. It can be deposited using an ion beam on an untextured alloy substrate, such as using an evaporation (IBAD) process. The addition of the oxide layer prevents metal diffusion from the tape to the ELR material. Other techniques can utilize chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy per atomic layer (ALL-MBE), and other solution deposition techniques to produce ELR materials. . In the process of forming the wire, several changes were made
The ELR films may be sandwiched together to form a wire.

In the step of forming the ELR wire, a large capacity wire may be formed by sandwiching a plurality of ELR tapes or foils together. For example, the electrode can include one or more ELR tapes or foils.

In addition to ELR wires, electrodes and other conductive elements can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 50 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, ELR materials are 10 nanometers wide and / or
Alternatively, it can be formed into a nanowire having a depth. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

Thus, modified ELR materials are formed into tapes, foils, rods, strips, nanowires, thin films, and other shapes and structures that can transfer or carry current from one point or location to another May be.

In some examples, the type of material used for the ELR material can be determined by the type of application that utilizes the ELR material. For example, in some applications, BS
The CCO ELR layer is used, but the YBCO ELR layer can be used in other applications. That is, the ELR materials described herein are based on a specific material (eg, YBCO or BSCCO) and a specific structure (eg, wire, tape, foil, thin film) based on the type of machine or component that utilizes the ELR material. , And / or nanowires).

Various manufacturing processes may be used in forming the ELR-based junction devices described herein. For example, a first layer of ELR material is deposited on a substrate (eg, a semiconductor substrate),
Subsequently, a second layer of material to be changed may be deposited on the first layer. The semiconductor element is ELR
It may be placed in close proximity to the material to form a bond. Of course, those skilled in the art will realize that other processes are available.

As described herein, many devices and systems can use / incorporate ELR-based junctions such as transistors that include components that exhibit very low resistance to current at high or ambient temperatures. In the next section, some exemplary devices, systems, and / or applications are described. Those skilled in the art will recognize other devices, systems, and / or
Or it will be understood that the application can also utilize ELR-based junctions.

FIG. 39-D is a schematic diagram illustrating a transistor 3900 using semiconductor nanowires and one or more ELR elements. The transistor 3900 includes a nanowire 3910, a first ELR element 3920, and a second ELR element 3925 formed from a semiconductor material. In some cases, ELR elements 3920, 3925 are also nanowires or other similarly sized elements.

In operation, the superconducting current in the first ELR element 3920 (ie, the current flowing without resistance) travels through the nanowire 3910 to the second ELR element 3925. Application of a gate voltage to the nanowire, such as by a gate electrode formed from an ELR material, is applied to the semiconductor nanowire 39.
May control the current passing through 10.

Thus, a small circuit may have multiple transistors 39 like an array of transistors 3900.
00 can be used. For example, a superconducting quantum interference device (SQUID) can be formed with two such transistors 3900 and can be used as a switching coupling element between other applications and qubits.

40A-D and 40B-D are schematic diagrams illustrating bipolar junction transistors using one or more ELR elements. 40A-D show an npn bipolar junction transistor 4000. FIG. np
n Bipolar Junction Transistor 4000 includes an emitter electrode 4010, a collector electrode 4012, a gate electrode 4014, some or all of which are like the modified and / or open ELR materials described herein. It is made of ELR material. First n-type semiconductor 4020
, The p-type semiconductor 4024, and the npn-type junction formed by the second n-type semiconductor 4022, the emitter electrode 40
10 and the collector electrode 4012.

40B-D show a pnp bipolar junction transistor 4030. FIG. The pnp bipolar junction transistor 4030 includes an emitter electrode 4040, a collector electrode 4042, a gate electrode 4044, some or all of which are formed of modified and / or open ELR materials as described herein. ing. First n-type semiconductor 4050, p-type semiconductor 4054, and second n-type semiconductor 4052
The npn-type junction 4042 formed at is between the emitter electrode 4040 and the collector electrode.

In some embodiments, the npn bipolar junction transistor 4000 and / or the pnp bipolar junction transistor 4030 includes a current control switch that controls the amount of current flowing through the junction relative to the magnitude of the bias voltage applied to the base terminal. Acts as a current control device. Since the current control device is a three-terminal device, it may affect the input signal in three different ways: (1) For a common base configuration that provides voltage gain without current gain (2 ) For common emitter configurations that provide gain at voltage and current; (3) For common collector configurations that provide current gain without voltage gain. For example, the npn bipolar transistor 4000 can be used as an amplifier configured with a common emitter configuration.

FIG. 41-D schematically illustrates a field effect transistor (FET), such as a metal oxide semiconductor field effect transistor (MOSFET), that uses one or more ELR elements. E
T 4100 includes a substrate 4110 having an n-type source 4112 and an n-type drain 4114. FET 4100
It also includes a source electrode 4120, a drain electrode 4122, and a gate electrode 4124, some or all of which are ELRs, such as modified and / or open ELR materials described herein. Formed of material. The FET 4100 includes an insulating layer 4126D, typically made of oxide, that insulates the gate electrode 4124 from the substrate 4110.

During operation, a positive voltage is applied to the gate electrode 4124, generating an electric field in the channel region 4128,
Electrons allow flow through channel region 4128 from source 4112 toward drain 4114. That is, the generated electric field establishes a field effect that allows current to flow through the device and switches the transistor to the on state.

MOSFETs are commonly used to amplify and / or switch electrical signals. MOSFE
T may be configured as an NMOS or PMOS device, or a complementary metal oxide semiconductor (CMOS
) May be grouped together to form a circuit. ELR-based MOS like CMOS circuit
Exemplary devices that can use FETs are described.

FIG. 42-D is a schematic diagram 4200 illustrating an amplifier using one or more ELR-based transistor elements. Amplifier 4210 includes one or more transistors 4220 formed with at least a portion of an ELR component, such as a bipolar junction transistor, a field effect transistor. During operation, amplifier 4210 receives input signal 4230, amplifies that signal,
An amplified output signal 4240 is generated. Various types of devices can use the amplifier 4210, including mobile devices, televisions, radios, signal processing, wireless transmission, and other devices that provide audio playback.

In some examples, amplifiers using ELR materials exhibit low power consumption and can be performed faster than amplifiers using conventional interconnects or metallides. The IC layout can be simplified because the effect of common resistance is reduced or eliminated.

FIG. 43-D is a schematic diagram 4300 illustrating a switch using one or more ELR-based transistor elements. Switch 4310 includes one or more ELR-based transistors 4315, such as ELR-based bipolar junction transistors, ELR-based field effect transistors, and the like. In operation as a logic gate, memory, and / or information storage device, switch 4310 is either in an “on” state associated with “1” in computer logic or an off state associated with “0” in computer logic. Therefore, the input signal 4320 such as the input voltage is received and the output signal 4322 is generated.

In operation within the switch mode power supply, the switch 4310 receives a current type input signal 4320 and generates an output signal that changes the current type. For example, switch 4310 receives current from the grid and regulates the current for use with a particular device.

As an example, in a switching regulator, a DC voltage (Vin) is converted into a PWM waveform that is pulse-width modulated at a high frequency. The mark / space ratio of the PWM waveform generally sets the transmission ratio (Vout / Vin). Next, the PWM waveform is filtered by an inductor and a capacitor to obtain a desired output voltage (Vout). There are three types of regulators.
The step-down regulator (Vin> Vout) is also referred to as a step-down regulator, the step-up regulator is referred to as a boost regulator and an inverting regulator, and is also referred to as a buck-boost regulator (Vout = Vin). Interconnect, inductor winding, capacitor electrode,
And / or all other ELR bases can benefit from the removal of transistor resistance. The result is highly efficient.

Switch 4310 can be utilized for other applications such as analog-to-digital converters, digital-to-analog converters, microprocessors and other logic-based elements. In some cases, the use of ELR elements can result in improved efficiency, faster clock speed (ADC, DAC) and / or calculation / instruction time resulting in faster conversion times μC, μΡ, logic, simplified integration Facilitates circuit design.

Figure 44-D shows a microprocessor 4400 that uses one or more ELR-based elements
FIG. Microprocessor 4400 includes one or more ELR base transistors 4415, accumulator 4417, program counter 4420, address register 4425, control sequencer 4430, decoder 4435, data register 4440, random access memory 4450, and / or input / output (I / O) includes logical component 4410, including component 4455 (RAM). Microprocessor 4400 also includes various information paths 4460. Some or all of them may be formed from the modified and / or open ELR materials described herein. Conductive path 4460 includes control bus path 4462, data bus path 4464, and address bus path 4466.
, And may be.

Forming part or all 4460 of the path information of the logic component 4410 and / or the microprocessor 4400 with the desired ELR material described herein that the microprocessor 4400 can perform more quickly and efficiently. to enable.

In some cases, ELR material-semiconductor junctions are complex because there is virtually no propagation delay in circuits that use ELR interconnects to achieve high fidelity signals over long distances to minimize resistive distortion. Enabling devices such as switches, amplifiers, logic devices, memory devices to run very fast without the need for complex components and / or architectures.

Of course, those skilled in the art will appreciate that other systems and devices may use the ELR-based junction transistors described herein.

In some embodiments, a transistor comprising a modified ELR material can be described as follows.

A junction device comprising a modified very low resistance (ELR) element and a semiconductor disposed proximate to the modified ELR element, wherein the modified ELR element comprises a layer of ELR material A bonding device comprising a modifying layer that modifies one or more operating characteristics of the layer of ELR material.

A method of forming a junction comprising forming a modified very low resistance (ELR) element on a substrate and forming a semiconductor disposed proximate to the modified ELR element on the substrate. A process comprising the steps of:

A junction formed on a substrate, a first element made of a semiconductor material, and 150K and 313K
And a second element formed of a very low resistance (ELR) material that exhibits a very low resistance to charge flow at temperatures in the range of.

A first modified very low resistance (ELR) element; a second modified very low resistance (ELR) element; the first modified ELR element; and the second modified E
A Josephson junction device including a semiconductor disposed between an LR element, the first modified ELR element or the second modified ELR element comprising: a layer of ELR material; and the ELR material A Josephson junction device, comprising: a layer to change, to change one or more operating characteristics of the layers of the.

Forming a first modified very low resistance (ELR) element on the substrate; forming a semiconductor on the substrate proximate to the first modified ELR element; and on the substrate Forming a second modified very low resistance (ELR) element proximate to the semiconductor of the method of forming a Josephson junction.

A Josephson junction formed on a substrate, the first formed of a very low resistance material
An element and a second formed from a semiconductor material and disposed proximate to the first element
An element and a third element formed with a very low resistance, wherein the first element or the third element has a very low resistance to charge flow at a temperature between 150K and 313K A Josephson junction characterized by being made of a very low resistance (ELR) material.

A first nanowire formed of a modified very low resistance (ELR) material; a second nanowire formed of the modified very low resistance (ELR) material; and the first nanowire to form a first junction. A semiconductor nanowire having a first end coupled to the first nanowire and a second end coupled to the second nanowire to form a second junction, the transistor comprising: A transistor characterized in that the modified ELR material includes a layer of ELR material and a modifying layer that modifies one or more operating characteristics of the layer of ELR material.

A device for controlling current, a semiconductor nanowire, a first modified very low resistance (ELR) element that emits current to the semiconductor nanowire, and a second modified to collect current from the semiconductor nanowire A device comprising: a very low resistance (ELR) element; and a control element that applies a voltage to the semiconductor nanowire to control the current in the semiconductor nanowire.

A first junction formed with a first modified very low resistance (ELR) disposed proximate to a first region of the semiconductor nanowire and disposed proximate to a second region of the semiconductor nanowire And a second junction formed from a second modified very low resistance (ELR) nanowire.

A bipolar junction transistor, an emitter electrode formed of a modified very low resistance (ELR) material; and a collector electrode formed of the modified very low resistance (ELR) material; A base electrode (ELR) material formed of a very low resistance material, a first end coupled to the emitter electrode to form a first junction, and the collector electrode to form a second junction A semiconductor element having a second end coupled to the ELR material, wherein the modified ELR material modifies a layer of ELR material and one or more operating characteristics of the layer of ELR material A bipolar junction transistor comprising a changing layer.

A device for controlling current, a semiconductor element, a first modified very low resistance (ELR) element that discharges current to the semiconductor element, and collecting current from the semiconductor element, a second A device comprising a modified very low resistance (ELR) element and a control element that applies a voltage to the semiconductor element to control the current in the semiconductor element.

A first junction formed of a first modified very low resistance (ELR) element disposed adjacent to a first region of the semiconductor component and disposed adjacent to a second region of the semiconductor component; A bipolar junction transistor comprising: a second junction formed of a second modified very low resistance (ELR) element.

A metal oxide semiconductor field effect transistor (MOSFET), a source electrode formed of a modified very low resistance (ELR) material, and a drain formed of the modified very low resistance (ELR) material An electrode and a gate electrode formed of the modified very low resistance (ELR) material, the modified ELR material comprising: a layer of ELR material; and one or more of the layers of ELR material A metal oxide semiconductor field effect transistor (MOSFET) comprising: a layer to change, further changing operating characteristics.

A current controlling device comprising: a semiconductor region; a first modified very low resistance (ELR) element that provides an electron source to the semiconductor element; and a second receiving electron from the semiconductor element; A device comprising: a modified very low resistance (ELR) element; and a control element that applies a voltage to the semiconductor element to control the flow of electrons in the semiconductor element.

An electrode configured to be utilized by a metal oxide semiconductor field effect transistor (MOSFET) comprising: a layer of a very low resistance (ELR) material; and a layer of the very low resistance (ELR) material. An electrode characterized in that it has one or more operating characteristics that change or change layers.

A switch comprising a metal oxide semiconductor field effect transistor (MOSFET), formed of a modified very low resistance (ELR) material and a source electrode formed of the modified very low resistance (ELR) material A modified drain electrode and a gate electrode formed of the modified very low resistance (ELR) material, the modified ELR material comprising: a layer of ELR material; and the EL
A switch comprising a changing layer that changes one or more operating characteristics of a layer of R material.

A logic device, a semiconductor region, a first modified very low resistance (ELR) element that provides an electron source to the semiconductor element, and a second modified that receives electrons from the semiconductor element A very low resistance (ELR) element and a control element that applies a voltage to the semiconductor element to control the flow of electrons in the semiconductor element, the actual electron flow rate corresponding to 1. A logic device characterized by indicating a first logic state and having no electron flow indicates a second logic state corresponding to 0.

A switch having an emitter configured to emit one or more electrons to the semiconductor element and a collector configured to collect one or more electrons from the semiconductor element; The switch, wherein the emitter or the collector comprises a modified very low resistance (ELR) material.

An amplifier including a metal oxide semiconductor field effect transistor (MOSFET) formed with a source electrode formed of a modified very low resistance (ELR) material and the modified very low resistance (ELR) material A modified drain electrode and a gate electrode formed of the modified very low resistance (ELR) material, the modified ELR material comprising: a layer of ELR material; and the ELR
An altering layer that alters one or more operating characteristics of the layer of material.

An amplifier, comprising: an emitter configured to emit one or more electrons to the semiconductor element; and a collector configured to collect one or more electrons from the semiconductor element. The amplifier, wherein the emitter or the collector comprises a modified very low resistance (ELR) material.

A method for amplifying a signal, comprising: receiving a current at an emitter; emitting electrons to a semiconductor element based on the received current; applying a voltage to the emitted current; and receiving Achieving a gain in voltage or current with respect to the measured current, and collecting the amplified current in a collector electrode formed from a modified very low resistance (ELR) material. how to.

An amplifier including a metal oxide semiconductor field effect transistor (MOSFET) formed with a source electrode formed of a modified very low resistance (ELR) material and the modified very low resistance (ELR) material Drain electrode, the modified gate electrode formed of very low resistance (ELR) material, and configured to maintain the temperature of the MOSFET at a temperature lower than the ambient temperature of the MOSFET A cooling system, wherein the modified ELR material is ELR
And an altering layer that alters one or more operating characteristics of one or more of the layers of ELR material.

A junction device, a modified very low resistance (ELR) element, a semiconductor located in the vicinity of the modified ELR element, and a temperature at which the modified ELR element propagates charge with a very low resistance A cooling component that holds the modified ELR element, wherein the modified ELR element modifies a layer of ELR material and one or more operating characteristics of the layer of ELR material A bonding device comprising: a layer to be bonded.

A current controlling device comprising: a semiconductor region; a first modified very low resistance (ELR) element that provides an electron source to the semiconductor element; and a second element that receives electrons from the semiconductor element; A modified very low resistance (ELR) element, a control element for applying a voltage to the semiconductor element to control the flow of electrons in the semiconductor element, the first ELR element, the second ELR element, or The third EL
A temperature component that maintains the R element at a temperature below the ambient temperature of the device.

An information storage device, which provides a memory area and a supply source of electric charge to the memory area.
An information storage device comprising: a first modified ELR element; and a second modified ELR element that receives charges from the memory area.

An information storage device, a semi-conductor region, a first modified very low resistance (ELR) semiconductor element that provides an electron source to the semiconductor region, and receives electrons from the semiconductor element, a second A modified very low resistance (ELR) element and a control element that applies a voltage to the semiconductor element to control the flow of electrons in the semiconductor element, the actual flow rate of electrons being An information storage device characterized by showing a first logical state corresponding to 1 and having no electron flow showing a second logical state corresponding to 0.

Chapter 8-Integrated Circuits Formed from ELR Materials Part A Integrated Circuit Devices Refer to Figures 1-36 and Figures 37-E through 45-E for a discussion of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

An integrated circuit component formed of a modified very low resistance (ELR) material is described. The modified ELR material may be, for example, a membrane, tape, foil, or nanowire. However, for ease of explanation, the examples herein are modified ELRs.
Assuming the material is a membrane, other examples can be used. Modified ELR materials provide very low resistance to current at temperatures higher than the normal temperatures associated with current high temperature superconductors (HTS), and at these high temperatures, integrated circuit operation Improve properties.

In some examples, the modified ELR film is the type of material used in the integrated circuit, the application of the modified ELR film, the size of the component that uses the modified ELR film, the modified ELR film Manufactured based on the operating requirements of the devices and equipment used. Thus, during the design and manufacture of an integrated circuit, the material used as the base layer of the modified ELR film and / or the material used as the modifying layer of the modified ELR film may vary according to various considerations, desired Selection can be based on operating characteristics and / or manufacturing characteristics.

FIG. 37-E is a schematic diagram illustrating a cutaway view of a conductive path 3700E that has been modified, opened, and / or formed at least in part from other new ELR materials. Such an ELR material has, for example, a base layer 3704 of ELR material and a modifying layer 3706 formed on the base layer 3704. While various examples of the present invention have been described with reference to various configurations of “modified ELR materials” and / or modified ELR materials (eg, modified ELR films, etc.), Any of the improved ELR materials described in may be modified ELR materials (eg, modified ELR materials 1060, etc.), apertured ELR materials, and / or others consistent with various aspects of the invention. It will be appreciated that a new ELR material may be used. As described herein, these improved ELR materials have at least one improved operating characteristic and, in some examples, operate in ELR conditions at temperatures above 150K. Is included. ,

Various suitable modified ELR membranes are described in detail herein. Such conductive paths, when implemented in an integrated circuit, for example, microprocessors, microcomputers, microcontrollers, digital signal processors (DSPs) to distribute power and propagate signals to and from circuit components. , System on chip (SoC), disk drive controller, memory, application specific integrated circuit (ASIC), application specific standard product (ASSP), field programmable gate array (FPGA), or other semiconductor integrated circuit Can be used.

As shown in the example of FIG. 37-E, the conductive path includes an ELR material base layer 3704 and a modifying layer 3706 formed on the ELR material base layer 3704. Conductive path is a substrate 3702 such as on a silicon substrate of an integrated circuit
Can be formed on top. Conductive paths can be formed on other IC layers. Conductive path 3700, formed with modified ELR film, is conventional HTS such as room temperature or ambient temperature (~ 21 ° C)
There is little or no resistance to current flow in the conductive path at temperatures higher than those used in the material.

The material or dimensions of the substrate 3702 can be selected based on various factors. For example, selecting a substrate material with a high dielectric constant generally reduces the capacitance found in the transmission line, and thus reduces the power required to drive the signal. One skilled in the art will appreciate that the substrate may be formed in many different materials and many different shapes to achieve the desired characteristics and / or desired operational characteristics.

In some examples, the modified ELR conduction path is a transition temperature of conventional HTS materials (eg, 80-
It exhibits a very low resistance to current flow at temperatures between 135K) and room temperature (about 294K). In these examples, the conductive path is a cooling system such as a refrigerator or cryostat as used to cool the conductive path 3700 to the critical temperature of the modified ELR membrane type used in the conductive path 3700. (Not shown). For example, the cooling system can cool the conductive path to the same temperature as the liquid freon temperature, to the same temperature as frozen water, or to the same temperature as other temperatures described herein. It may be a system. That is, the cooling system can be selected based on the type and structure of the modified ELR film utilized for the conductive path 3700.

FIG. 38-E is a schematic diagram illustrating a model example of a conductive path formed from a modified ELR film. The model includes input I and output O. Ri and Ro are each resistance value of the material connected to the input / output end of the conductive path formed from the modified ELR film. Rv1, Rv2, Rv3 and Rv4 are the resistance values of vias and / or other connections from the internal conduction path to the skin of the conduction path. Rw1 and Rw2 are resistance values of the conductive paths inside the changed ELR film. Rs1 to Rs4 and Cs1-Cs4 are transmission line models of the outer skin of the conductive path. The elements contained within dashed line 3802 can be replicated in series at position P for each via (or other connection, etc.) on the conductive path. The example model in Figure 38-E is
Shown is a branch B1 connecting to a via (indicated by Rv4) and a series path of output O destinations. In some examples, the model can include multiple elements including inductors.

Due to the very low resistance values (indicated by the models Rw1 and Rw2) of the conductive path formed from the modified ELR film, the signal propagation of the conductive path has a wavefront delay time constant close to zero. The signal propagates through the modified ELR film crystal structure in a manner similar to propagation in an optical waveguide that is not disturbed by the external environment capacitance. However, the signal is also normal resistance (model R
Modified ELR to experience the capacity of the surrounding environment (indicated by CS1-C _S5 of the model) and the surrounding environment (indicated by s1-Rs4)
Propagates over the skin of the membrane. Thus, a signal propagating through the crystal structure of the modified ELR film can reach the destination node and change the voltage at the node before the skin reaches the fully modified voltage.

As described herein, many integrated circuit devices and systems can utilize and / or incorporate modified ELR conductive paths that exhibit very low resistance values at high or ambient temperatures. In general, a device or system that provides an electron flow path can incorporate a modified ELR conductive path as described herein. In the next section, some exemplary devices, systems, and / or applications are described. Those skilled in the art will appreciate that other devices, systems, and / or applications can also utilize the modified ELR conductive path.

In some examples, integrated circuit electrostatic discharge (ESD) protection routing may utilize a modified ELR conductive path as described herein. FIG. 39-E is a diagram of an example integrated circuit including ESD protection routing formed with modified ELR conductive paths. As shown in FIG. 39-E, the modified ELR material has a normal signal path 3904 (integrated circuit input / output pad 39
14) and the ESD protection circuit 3906 is used to implement a conductive path 3902 that establishes a connection. The modified ELR material can also be used with a conductive path 3908 that connects between the ESD protection circuit 3906 and ground 3910. In some examples, the modified ELR conduction path can be directed. That is, because the current flows along a specific surface of the modified ELR material, the ESD protection network of Figure 39-E is effectively connected to two sub-systems connected by vias such as via 3912 to guide the ESD to the ground. In particular, an orthogonal layer can be used. In other examples, the normal signal path 3904 can also be formed from a modified ELR material.

The latest integrated circuit technology with small size features is quite vulnerable to ESD, and manufacturers had to develop technology to protect against ESD. There are two problems in the prior art for mitigating ESD events. The first problem is to immediately detect an ESD event, and the second problem is to pass charge through a routing circuit within a limited time before building a voltage where the charge reaches the damage threshold. Is to conduct. Because small transistors in modern integrated circuits have low breakdown voltages, it is difficult to achieve a proper protection rating using conventional materials.

Implementing an ESD protection circuit for the modified ELR material allows for a sufficient protection assessment for ESD protection. First, since the conductive path 3902 between the normal signal path and the ESD protection circuit is implemented using a modified ELR material, the ESD signal has a wavefront delay time approaching zero. This allows the ESD protection circuit 3906 to detect an ESD event almost instantaneously. Modified EL
R material ESD protection network provides current conduction for ESD events before charge builds to a level that damages the circuit structure, and ESD into a well-designed path (eg, conductive path 3908) In addition to guiding, it provides a very quick response to detect ESD events and trigger protection. The ESD protection voltage rating is directly proportional to how quickly the ESD protection circuit reacts to an ESD event. For example, an ESD protection circuit using conventional materials usually has 2
ESD protection circuit with conductive path formed from modified ELR material, but with a rating of, 000V human body model (HBM), is easily over 16,0 because the response speed is more than 8 times faster
Achieve 00V HBM rating.

ESD protection network from modified ELR conductive path, for example, microprocessor, microcomputer, microcontroller, DSP, SoC, disk drive controller, memory, ASIC, ASSP, FPGA, neural network, sensor array, MEMS, general It can be implemented on other semiconductor integrated circuits.

In some examples, the resistance of the modified ELR path can be changed to produce a resistance at a defined location. Resistors can be used as circuit components of integrated circuits. For example, the resistor can be used in an analog integrated circuit such as a filter or an amplifier. The timing of the digital circuit can be changed by adding resistance to the clock network. By inserting an extra resistor in the conductive path that carries the signal, the integrity of the signal in critical areas can be improved.

FIG. 40-E illustrates an exemplary laser programmable element on a conductive path formed from a modified ELR material. The modified ELR conductive path 4002 shown in FIG. 40-E includes a laser modified portion 4006. FIG. An integrated circuit chip usually has a protective layer on the surface of the chip. In some examples, this protective layer is an aperture 400 that exposes the modified ELR conductive path to the laser.
Removed to produce 4. When the laser modified portion 4006 is exposed to the laser, the resistance of that portion increases relative to the surrounding conductive path. In some examples, the energy from the laser rearranges the molecular structure of the portion of the conductive path modified by the laser so that the crystal structure of the modified ELR material no longer acts as a waveguide. In other examples, changed
The changing layer of ELR material is ablated by the laser, and the low resistance facilitated by the changing layer is lost. In another example, both the modifying layers of the modified ELR material are ablated and the molecular structure of the conductive path is altered by the laser.

The dimensions of the part modified by the laser define the resistance, and that part is provided in the modified ELR conducting path. The laser modified portion of the modified ELR conductive path can "insert" a resistor into the circuit after the circuit is manufactured, and change the clock frequency on the chip "
Particularly useful for analog circuits as well as fine-tuned “oscillators. In some examples, the continuous linear distance of the modified ELR conduction path can be varied to provide the desired resistance. In this example, multiple discontinuities in the modified ELR conduction path can be modified with a laser to provide an overall series resistance.

For example, FIG. 41-E shows a multi-bit laser programmable element on a conductive path formed from an exemplary modified ELR material. FIG. 41-E shows modified ELR conductive paths 4102-4108 having various resistances made up of portions modified by many individual lasers. As noted above, in some examples, openings 4410 in the protective layer are provided to expose the conductive path to the laser. The conductive path 4102 includes a single element resistor 4112 as described above with reference to FIG. 40-E. Conductive path 4104 includes two separate laser modified portions 4114, 4116 that are added to provide total resistance to conductive path 4104. It will be apparent to those skilled in the art that various configurations and dimensions of the laser modified portion can be combined to provide the desired resistance to the conductive path. As will be appreciated, other programming mechanisms, such as ion beams and electron beams, may be appropriate for programming the modified ELR conduction path in a particular application.

In some examples, the resistance of the modified ELR conduction path can be temporarily changed by the presence of a magnetic field. The ELR state of the modified ELR material is as low as absolute zero,
It cannot exist in the presence of a magnetic field exceeding the critical value. This critical magnetic field has been changed
It is strongly correlated with the critical temperature of ELR materials. In some examples, the modified ELR material exhibits two critical magnetic field values, one where the mixed ELR and normal condition occur, and one where the ELR stops. The properties of the mixed ELR state can be used to implement various values of resistance by changing the magnetic field.

FIG. 42-E is a schematic diagram illustrating a cutaway view of an exemplary integrated circuit having a magnetically programmable element over a conductive path formed from a modified ELR material. The integrated circuit includes a semiconductor substrate 4201, dielectric material 4202, wiring layers 4203, 4205, 4207, 4210, 4212, 4214, 4216, 4218, via layers 4204, 4206, 4208, 4211, 4213, 4215, 4217, and magnetically Void 4219 is defined that defines programmable element 4220. In some examples, at least the wiring layer 4212 is formed from a modified ELR material.

When the exemplary integrated circuit of FIG. 42-E is exposed to a magnetic field stronger than the critical magnetic field, the resistance of the wiring layer 4212 increases. The wiring layer 4209 above the wiring layer 4212 acts as a shield against a magnetic field such that the void 4219 in the shield layer 4209 magnetically defines the programmable element 4220. In some examples, the plurality of air gaps can define a plurality of magnetically programmable elements. In some examples, each of the plurality of magnetically programmable elements can be exposed to a different strength magnetic field to produce a variety of different resistance values.

Magnetically programmable elements in integrated circuits have many uses. For example, the element can be used in an analog integrated circuit as a resistor that can be dynamically added, deleted, and / or adjusted. The timing of the digital circuit can be adjusted by adding, deleting, and / or adjusting the resistance value by exposing the magnetically programmable element to a magnetic field. The integrity of the signal in the critical region can be improved by inserting an extra resistor by exposing the conductive path carrying the signal to the magnetic field. Magnetically programmable elements or magnetically programmable matrices can be used to measure the magnetic field just as a thermistor is used to measure temperature.

The magnetic field can be supplied by a device mounted near the magnetically programmable element. For example, the device may be a permanent magnet or an electromagnet. Figure 43-E
FIG. 2 illustrates a magnetically programmable element activated by, for example, a magnetoresistive random access memory (MRAM) cell. In the example of FIG. 43-E, the modified ELR material conductive path 4302 is formed in the vicinity of the MRAM cell 4304. Magnetic field for the following example in Figure 43-E and Figure 44-E
Although the source of 4308 is described as being an MRAM cell, a magnetic field source such as the ELR sensor / antenna described in Appendix A can be used to generate the magnetic field.

An MRAM cell has at least two states, and the magnetic field generated by the MRAM cell can vary depending on the state. The MRAM cell has a magnetic field generated by the MRAM cell.
It is placed close enough to the conductive path 4302 to exceed the critical magnetic field of the conductive path for at least one state of the cell. In some examples, the width of the conductive path near the MRAM cell is reduced to a reduced width portion 4306, for example. This reduction in width can affect the critical magnetic field required to change the resistance value of the reduced width.

In some examples, multiple MRAM cells can be distributed or localized along a conductive path that installs multiple resistors that change resistance. FIG. 44-E is an exemplary diagram of a plurality of MRAM cells distributed along a modified ELR conduction path. As shown in Figure 44-E, each conductive path 4402-44
08 has multiple MRAM cells that can generate a magnetic field for the segments of the conductive path. Each MRAM cell can be selectively activated and the resistance of the conductive path can be changed.
For example, MRAM cell 4410 is in a first state that generates a magnetic field that exceeds the critical magnetic field for segment 4412 of modified ELR conduction path 4402. The MRAM cell 4411 is in a second state that does not generate a magnetic field that exceeds the critical magnetic field for the segment 4413 of the modified ELR conduction path 4402.

Multiple segments of the modified ELR conductive path can be exposed to a magnetic field that produces multiple resistance values. For example, both MRAM cells 4414 and 4416 are in the first state and the modified ELR
A critical magnetic field can be generated for segments 4418, 4420 on conductive path 4404. The number of segments that vary in length can be combined to produce an almost infinite possible resistance created on the conductive path. This multiple MRAM cell or other magnetic field source configuration can be used to create an adaptive filter that can change the resistance of the filter in the filter. This configuration can be used to adjust the impedance of the transmission line for matching.

In some examples, the segment of the modified ELR conductive path is a current limiting device by resizing the segment so that the current flowing through the conductive path rises above the critical current in the modified segment. Can be used as For example, FIG. 45-E shows a modified ELR conductive path 4502 having a current limiting segment 4504. FIG. The example of FIG. 45-E includes a narrow segment of modified ELR material, but those skilled in the art will appreciate that other dimensions of the modified ELR material can be varied. For example, a segment of modified ELR material can be made thin, and multiple layers of modified ELR material can be made with fewer layers.

In some examples, multiple elements can be created on the modified ELR conductive path. By designing the required width and thickness for each element, a critical current can be reached in each case. Each element operates with negligible resistance in normal use when the current is below the critical current, but to meet some design strategies (eg, mitigate faults or other desired conditions) If the current exceeds the critical current of the segment, the segment will have a higher resistance than the rest of the conductive path. As described above, the resistance of a segment can be defined by the thickness, width, and / or length of the segment.

In some examples, a transistor or a microelectromechanical system (MEMS) switch can be used to trigger when a critical current is reached within a particular segment of the conductive path. For example, a MEMS switch can be set to a path of current flowing through a current limiting segment depending on certain conditions, otherwise it can route current through an alternate path.

In some examples, some or all of the systems and devices described herein may be
Low cost cooling systems may be used in applications where the modified ELR material used in the application exhibits a very low resistance at temperatures below ambient temperature. As described herein, in these examples, the application allows the modified ELR conducting path to be the same temperature as the boiling point of liquid chlorofluorocarbon, to the same temperature as the melting point of water, or A cooling system (not shown), such as a system for cooling to other temperatures described herein, may also be included. The cooling system can be selected based on the type and structure of ELR material used in the application.

In addition to the systems, devices, and / or applications described herein, one of ordinary skill in the art can utilize other integrated circuit systems, devices, and applications with the conductive paths of the ELRs described herein. .

Part B Integrated Circuits and MEMS Devices Refer to Figures 1-36 and Figures 37-F through 45-F for descriptions in this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Various embodiments of the present invention generally relate to very low resistance interconnects (ELRI) such as interconnects that have been modified, opened, and / or incorporated with other new ELR materials. In some embodiments, the ELRI has a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the first layer of ELR material. ELRI can be used in a variety of systems and methods to produce a variety of improvements. Some examples where various efficiencies are generated include microelectromechanical systems (such as analog circuits on semiconductor integrated circuits (ICs)).
System and method using ELRI to connect MEMS), System and method using ELRI to connect multiple MEMS on IC or IC mounting substrate, ME on semiconductor IC or mounting substrate
System and method using ELRI for passive components used with MS, IC
Systems and methods that use ELRI to connect MEMS to other circuits or system-in-package (SIP) on board, but are not limited to these.

In some embodiments, systems and methods are provided that use ELRI to connect MEMS to analog circuitry on a semiconductor IC. Various embodiments use ELRI materials that provide a conductive path for signals that propagate between the function of the analog circuit and the MEMS element. These conductive paths have negligible resistance and can bring the wavefront delay time constant close to zero. In this way, signal and drive current delays in electrical interactions can be greatly reduced.

According to various embodiments, the ELRI material can also be used to connect multiple MEMS on the IC, on the IC mounting substrate, or elsewhere in the IC package. For example, ELRI material can be used to provide a conductive path for signals that propagate between various MEMS circuits on an IC. Conductive paths that couple to these various MEMS can be combined or corrected with different MEMS parameters or attributes to act as a MEMS network or virtual multi-channel in the sense that they have multiple and variable parameters or attributes. MEMS can be generated.

In one or more embodiments, ELRI can be used in semiconductor ICs or passive components on MEMS on a mounting substrate. For example, in some embodiments, ELRI materials can be used to provide passive components and / or conductive paths between passive components and other circuits. The conductive path allows the signal to propagate close to a negligible resistance and zero wavefront delay time constant. The use of ELRI materials substantially reduces signal delay and drive current in their electrical interaction. Further, the connection to the ELRI passive component can include a MEMS element that includes ELRI as part of the MEMS structure.

In addition, various embodiments of the present invention provide systems and methods that use ELRI to connect MEMS to other circuits on an IC mounting substrate or system in package (SiP).
In some of these embodiments, ELRI materials can be used to implement various conductive effects by implementing conductive paths that propagate signals between MEMS elements and circuit functional components. For example, the negligible resistance and wavefront delay time constant of the conductive path can be brought close to zero, thereby reducing the drive current substantially by signal delay and their electrical interaction.

ELRI can be manufactured based on the type of material, the application of ELRI, the size of the component using ELRI, the operating requirements of devices and machines using ELRI, and the like. Thus, materials used as ELRI base layers during design and manufacturing, and / or ELR
The material used as the changing layer of I is selected based on various considerations, desired operating characteristics and / or manufacturing characteristics. As used herein, layout and / or modified ELR
While various suitable geometric shapes and configurations for the arrangement of are shown and described, numerous other shapes are possible. These other shapes are: material thickness differences, use of different layers, ELR films with multiple adjacent changing layers, multiple ELR films modified by a single changing layer, other 3D In addition to structure, includes different patterns, configurations, and layouts for length and / or width. Thus, a suitable modified ELR can be used depending on the desired application and / or characteristics.

In the drawings, the size of various illustrated elements or components, as well as the lateral size and thickness of the various layers, are not necessarily drawn to scale, and these various elements are for ease of viewing. In addition, it is enlarged or reduced as appropriate. Also, if a detailed description of the present invention is not required, component details such as the exact geometry, the location of the components, and the exact connections between components are abstracted in the figure and excluded in detail. Yes. Where such details are not necessary for an understanding of the present invention, the representative geometric shapes, wiring, and configurations shown are intended to be exemplary of general design and operating principles.

FIG. 37-F shows analog circuits 3720a-372 using conventional interconnects such as 3730.
FIG. 3 is a schematic diagram showing a possible circuit design connecting 0d and MEMS 3710a to 3710d. In many circuit designs, the analog circuits 3720a-3720d connect the various MEMS parameters at the interface and measure the MEMS parameters. However, measurements are degraded by connection parasitic resistances that limit the accuracy of the signal. As shown in Figure 37-F, multiple analog circuits 3720a-3720d need to amplify the signal generated by the mechanical-electrical energy conversion of the MEMS and propagate through the resistive conductor 3760 The signal is provided to component 3740 in a conventional manner to compensate for the parasitic resistance loss caused by the signal. If the analog circuit is placed very close to the MEMS, a better function is usually provided. However, in some cases, MEMS 3710A ~
3710d cannot be placed adjacent to analog circuits 3720a-3720d for other design and manufacturing reasons. As a result, performance degradation occurs from the connection parasitic resistance due to the conventional conductive path, and additional design considerations are required to obtain sufficient performance.
Similarly, when MEMS is connected to other circuits and / or other components, similar degradation can occur when used in conventional conductive interconnects.

Some embodiments of the present invention provide methods and systems for connecting MEMS to analog circuitry on an IC using ELRI. For example, ELRI can be used to implement analog circuit functions and conductive paths for signals propagating between MEMS elements. These conductive paths have negligible resistance and can bring the wavefront delay time constant closer to zero. In this way, signal and drive current delays during electrical interaction can be substantially reduced. Also, performance and accuracy tend to be superior to the use of conventional conductive paths by reducing parasitic resistance when connecting to MEMS circuits. Thus, using ELRI to connect MEMS to components (eg, analog circuits and / or other circuits) allows components to be connected to the MEMS circuit almost independently of location.

FIG. 38-F is a schematic illustrating how to use ELRIs to connect MEMS to one or more analog circuits on an IC. According to various embodiments, an ELRI such as 3830 for connecting the MEMS circuits 3810A-3810d to the analog circuit 3820 of the analog circuit block 3840, respectively,
Along with MEMS structure and analog circuit, it can be practically mounted on a semiconductor IC. Analog circuits can measure MEMS parameters by connecting to MEMS parameters at the interface. However, in traditional interconnects, measurements degrade with connection parasitics and limit accuracy. As can be seen, using the ELRI 3830, the analog circuit 3820 is replaced by the MEMS circuit 3810a-38.
10d can be connected substantially independently of position and substantially without parasitic resistance, and the required circuit design complexity can be reduced. The output of each analog circuit 3820 can be coupled to drive line 3850 via a separate ELRI 3860.

In some embodiments of the invention, an IC that includes one or more conductive paths, a MEMS, and a set of circuits (eg, analog circuits) connected to the MEMS through one or more conductive paths Is supplied. In some embodiments, the one or more conductive paths are coupled to the first layer of ELR material (eg, YBCO, BSCCO, or others) and the first layer of ELR material to modify the material. And a second layer made of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, silver, or the like. In some embodiments, there can be multiple levels of IC interconnects, each level being electrically coupled to an adjacent interconnect level as required to make the conductive path continuous. Isolate from the adjacent level with the insulator having vias formed in the. The interconnect layer and the plurality of levels can include at least one of one or more conductive paths. According to some embodiments, the ELRI can be a superconductor or a full conductor at ambient temperature or under other suitable desired conditions.

The MEMS can include one or more components. For example, a high frequency circuit,
Including but not limited to variable transmission lines, waveguide resonators, ELR components, passive components, ELR passive components, quasi-optical components, variable inductors, variable capacitors and / or electromechanical filters. As another example, one or more components can include sensors for detecting environmental parameters. Examples of sensor types that can be used include, but are not limited to, pressure sensors, temperature sensors, optical sensors, vibration sensors, accelerometers, humidity sensors, electric field sensors, and / or acoustic sensors. is not.

In some embodiments, an electronic device that includes a power source connected to an IC (eg, wireless device, Wi-Fi device, spread spectrum device, wireless USB device, Bluetooth (
(Registered trademark) devices. The IC may have one or more conductive paths made of ELRI including a first layer made of ELR material and a second layer made of the material to be coupled, coupled to the first layer made of ELR material. it can. Also, a set of circuits (eg, RF circuits, analog circuits, digital circuits, etc.) can be connected to the MEMS device via one or more conductive paths. In some examples, an IC in an electronic device can also include an RF antenna, an RF amplifier, an RF filter, and / or an RF controller. In some cases, these components are ELR components made from ELR materials. For example, the RF antenna includes a first ELR antenna layer made of ELR material and a first ER made of ELR material.
There may be a second antenna ELR layer made of the material to be modified, coupled to the LR antenna layer.

Figure 39-F shows MEMS 3920 as an IC mounting board or other circuit or component 3930 on SIP 3940
Shows the use of ELRI 3910 to connect to. For example, ELRI 3910 converts MEMS 3920 to a microprocessor, microcomputer, microcontroller, DSP, system on chip (SoC), antenna, second MEMS, ASIC, ASSP, FPGA and / or other circuits, components or devices 3930 Can be used to connect. The techniques used in these embodiments can be used to connect the MEMS 3920 to other circuits and components 3930. In addition, these technologies are substantially semiconductor ICs that include the same or different types of MEMS 3920.
It can be mounted on a mounting board. For example, for SiP, the ELRI 3910 connects MEMS devices on the substrate to other passive components such as ICs and antennas, and the lack of appreciable resistance makes these elements physically on the substrate. It is possible to execute it so that it is directly connected to each node regardless of the place.

In at least one embodiment, an IC is provided that includes a MEMS, a network or component, and an IC mounting substrate. The IC mounting substrate includes one or more conductive paths made of ELRI having a first layer made of ELR material and a second layer made of the material to be modified, which is bonded to the first layer made of ELR material. Can be provided. A network of components can be connected to the MEMS via one or more conductive paths. In some embodiments, the component network is a programmable component, a microprocessor, a microcomputer, a microcontroller, a DSP, a system-on-chip (SoC), an antenna, a second MEMS, an ASIC, an ASSP, and / or an FPGA, etc. Includes one or more ELRI passive components. In one embodiment, the set of ELRI passive components is programmable to set a specific frequency or Q for the transmit or receive circuit.

In some embodiments, the MEMS comprises one or more internal layers consisting of a first layer of ELR material and a second layer of modifying material coupled to the first layer of ELR material. Can include paths and / or components. One or more components are
It can be an electrical component and / or a mechanical component. For example, in at least one embodiment, the one or more components include a set of ELRI passive components, a variable transmission line, a waveguide, a resonator, a quasi-optical component, a variable inductor, a variable capacitor, an electromechanical filter, Sensors, switches, actuators, structures, and / or other components can be included.

In some embodiments, the MEMS can include an input port for receiving input signals from outside the MEMS and / or an output port for transmitting signals generated internally outside the MEMS. The input port can be connected to a component configured to receive an input signal and generate a response. In some cases, input ports and / or output ports can be connected to components via one or more conductive paths that allow signal transmission. In some embodiments, one or more conductive paths are coupled to a first layer of very low resistance (ELR) material and a first layer of very low resistance (ELR) material. And a second layer made of a material to be used.

Various embodiments are provided for an electronic device having a power source connected to an IC. According to these embodiments, the IC is one or more of ELRI comprising a first layer of ELR material and a second layer of modifying material coupled to the first layer of ELR material. An IC mounting board having a plurality of conductive paths can be included. ICs are also MEMS and other components connected to the MEMS through one or more conductive paths (eg, microprocessors, microcomputers, microcontrollers, DSPs, SoCs, antennas, RF controllers, RF Circuit, RF amplifier, second MEM
Network of S, ASIC, ASSP, FPGA, neural network, and / or other components). In some embodiments, the MEMS includes one or more of the following components (ie, variable transmission lines, waveguide resonators, quasi-optical components, variable inductors, variable capacitors, and / or electromechanical filters). Can be included.

Many of the benefits stem from using ELRI to connect MEMS circuits to analog circuits on ICs or SIPs, and / or other circuits / components to others. For example, one or more conductive paths have near zero parasitic resistance, which allows the MEMS to connect to a circuit or set of components regardless of their location on the package.
ELRI also enables MEMS and circuits and components to be integrated on the IC at optimized locations and minimizes degradation due to parasitic resistance. As another example, ELRI allows MEMS and analog circuits to be designed somewhat independently. This independent design can facilitate rapid development. In addition, this means that MEMSIP and analog circuit IP
Allows for more free use of ELRI allows for greater independence between MEMS and analog circuit design, so more amount and variety can be integrated on the IC. Therefore, MEMS IC
Will grow with new products, which will provide a learning curve for product design and manufacture with improved growth.

Using this ELRI technology in IC products makes it easy to synergistically use other ELRI technologies. Examples include ELRI for connecting multiple MEMS circuits, ELRI for connecting MEMS to a mounting board or other circuit on a SIP, ELRI for 3D interconnection on an IC (mounting board on a package) Including MEMS ELRI technology such as ELRI for power distribution on the board). All of which can further improve ELRI technology development and product performance.

The resistance of metal interconnects created with traditional techniques for connecting MEMS circuits can limit and / or reduce their parameters or attributes. As shown in FIG. 40-F, some traditional designs have each MEMS 4020a-40 to increase signal strength.
Amplifiers 4010a to 4010f are used for the output of 20f. The outputs from amplifiers 4010a-4010f are then connected to the output of the MEMS circuit by an interface (eg, analog interface 4030) so that the output of the MEMS circuit is operational. However, using ELRI according to various embodiments of the present invention, the MEMS and interface can be connected in a manner that negates the parasitic effects of the interconnect.

FIG. 41-F is a schematic diagram showing a plurality of MEMS 4110a-4110f connected to the interface device 4120. According to various embodiments, the ELRI material comprises a plurality of MEMS 4110a-4110f ICs,
It can be used to connect together on a SiP or IC mounting substrate 4130. For example, ELRI material can be used to implement conductive paths 4140 that propagate signals between various MEMS circuits 4110a-4110f on the IC. These conductive paths connecting the various MEMS 4110a-4110f can be combined or corrected with different MEMS parameters or attributes to act as MEMS electrically while having multiple and variable parameters or attributes. Or a virtual multi-MEMS can be generated. According to various embodiments of the ELRI of the present invention, the ELRI can be implemented substantially on the same or different types of MEMS and semiconductor ICs for connecting the MEMS circuit to other MEMS. In some cases, ELRI does not reduce the output of MEMS.

An example of a virtual multi-MEMS is a MEMS capacitor connected to another MEMS capacitor via a MEMS switch to adjust the margin as "trimming". The “trimming” component may not be conquered by the same environmental forces encountered by the primary. The other is a plurality of MEMS that detects various environmental parameters. Examples include, but are not limited to, fluid pressure in the container, atmospheric pressure, container temperature, air temperature, ambient light, and vibration. The detected environmental parameters can then be connected to the integrated control.

In some embodiments, an IC is provided that includes one or more networks of MEMS, a set of circuits, and one or more conductive paths. One or more conductive paths are
A first layer of ELR material and a first layer of modifying material coupled to the first layer of ELR material.
And an ELRI having two layers. In some embodiments, the IC can have multiple layers, each layer including at least one conductive path. MEMS networks can be interconnected through one or more conductive paths. Also, a set of circuits (eg, digital circuits and / or analog circuits) can be coupled (directly or indirectly) to a network of MEMS via one or more conductive paths. In some embodiments, one or more conductive paths may be connected to a set of circuits where the first MEMS is independent of the design requirements previously imposed by the conductive properties of the prior art interconnect material. It can have almost zero parasitic resistance as it can.

In at least one embodiment, the MEMS network includes a first MEMS having an output port;
A second MEMS having an input port connected to the first MEMS via one or more conductive paths
And including a network of MEMS. In some cases, additional MEMS (eg, third MEMS, fourth MEMS, etc.) can be implemented on a single IC. As shown in FIG. 42-F, a multi-environment set of MEMS can be used. For example, MEMS 4210 can be configured to measure pressure, MEMS 4220 can be configured to measure temperature, and M
EMS 4230 can be configured to measure light and MEMS 4240 can be configured to measure vibration. In some embodiments, one of the MEMS, such as MEMS 4250, is a high frequency circuit, a sensor (eg, pressure sensor, temperature sensor, light sensor, vibration sensor, accelerometer, humidity sensor, electric field sensor, magnetic field sensor, acoustics). Sensors), actuators (eg, switches), and / or mechanical or electrical configurations (eg, variable transmission lines, waveguides, resonators, quasi-optical components, variable inductors, variable capacitors, electromechanical filters, etc.) including.

In some embodiments, an electronic device (eg, a wireless device) can be provided. The electronic device can include a power source connected to the IC. The IC may include one or more conductive paths made of ELRI having a first layer made of ELR material and a second layer made of the modifying material coupled to the first layer made of ELR material. it can. In various embodiments, an IC includes a network of one or more MEMS and a set of circuits (eg, analog circuits) coupled to the network of MEMS via one or more conductive paths. IC and / or MEM
S can include a variety of additional components made from ELR materials. As an example,
Includes RF circuits, RF antennas, variable transmission lines, waveguide resonators, quasi-optical components, variable inductors, variable capacitors, electromechanical filters, sensors, actuators, and / or other electrical or mechanical structures However, it is not limited to these.

Figure 43-F shows an EL for connecting multiple MEMS circuits 4320 to create a virtual multi-MEMS
Shown is an IC assembly 4300 using a RI 4310. MEMS generated by these interconnects
4320 networks can be designed. For example, some of the MEMS 4320 can be switches, and some can be sensors that are exposed to change environmental constraints. When the ELRI 4310 ignores the parasitic resistance and connects another MEMS, the integrated multi-MEMS is 1
Can act as two MEMS and change parameters or attributes.

As shown in FIG. 43-F, some embodiments allow a MEMS 4320 to be implemented on an ASIC 4330 or other component. In the embodiment shown in FIG. 43-F, the ASIC 4330 has a normal pad 4340 and an expansion pad 4350. IC assembly 4300 and / or ASIC 4330
Can be used to interconnect the ELRI 3D interconnect 4360 to some of the components.

Being able to design a virtual multi-MEMS device on an IC provides a great ability to open up wide opportunities to detect the environment and respond electronically. ELRI for connecting MEMS circuits to analog circuits on IC, ELRI for "3D" interconnection, and / or ELRI for power distribution on the board to be mounted
It is synergistically advantageous to use, but not limited to, the ELRI according to various embodiments of the present invention using other ELRI techniques such as:

In one or more embodiments, the ELRI is a semiconductor IC or MEM on the substrate to be mounted.
Can be used with passive components in S. For example, in some embodiments, ELRI
The material can be used to implement passive components and / or conductive paths between passive components and other circuits / components. The conductive path allows the signal to propagate with a negligible resistance and a wavefront delay time constant close to zero. As a result, the use of ELRI materials greatly reduces drive current delays in signal and electrical interactions. Further, these ELRI passive components and connections can sometimes include MEMS elements that include ELRI as part of the MEMS structure.

Various embodiments create advantages over conventional systems, in some cases making the MEMS manufacturing process practical, or failing to manufacture components within usable limits. For example, a very low resistance value can integrate passive components into a “virtual node”. This is because passive components do not exhibit the state of the art parasitic resistance.
As another example, ELRI passive components can produce near-ideal components, especially when used with MEMS, otherwise other conventional circuits on ICs and MEMS substrates (eg, inductors, transformers, etc.) Not available for integration with. Capacitors and inductors
A specific frequency and / or Q of the transmitter and receiver circuitry can be connected to program. Analog or digital MEMS elements can be used. In one embodiment, the register is a bit to enable various capacitors with strategic values to program various capacitances as needed to achieve the desired circuit attributes. Remember. In another embodiment, preset value capacitors are selectively connected to achieve the desired circuit attributes.

Based on various implementations, ELRI routing is ideal for connecting MEMS switches to passive components made of ELRI material with negligible parasitic resistance and integrating with other traditional circuits on the IC or MEMS substrate. Close components can be generated. MEMS ELRI passive components have capacitance or inductance (eg, to program a specific frequency of the transmitter and / or receiver circuit and / or Q) under the influence of environmental forces that the MEMS is designed to respond to Can be adjusted. In some cases, the inductor of the ELRI passive element can be formed to function as a signal isolation transformer.

Figure 44-F shows an IC 44 with a MEMS 4410 (possibly with ELRI passive components), a set of passive components 4420, and one or more conductive paths 4430 on the IC component mounting board.
00 is shown. In the illustrated embodiment, one or more conductive paths 4430 are the first of ELR material.
An ELR consisting of a layer and a second layer of a modifying material bonded to a first layer of ELR material. The set of passive components 4420 can be connected to the MEMS 4410 via one or more conductive paths 4430. In one or more embodiments, ELR antenna 4440 and spiral inductor ELR 4450 can be implemented on an IC.

In some embodiments, the second set of ELRI passive components can be implemented on an IC or MEMS. The set of ELRI passive components is programmable. For example,
The passive component can be programmed to set a specific frequency or Q of the transmitting or receiving circuit. As another example, a register can be used to store bits and select various capacitors using MEMS to achieve a particular frequency. In some cases, passive elements can include switches and / or sensors made of ELRI material.

In some embodiments, a cooling system is used to dynamically program one or more MEMS and / or ELRI components. For example, a resistive ELRI component
Can be used to program MEMS. As the cooling system lowers the temperature, the resistance in the ELRI element is reduced, effectively turning off the ELRI element. Similarly,
As the temperature rises to the critical temperature of the ELRI segment, the resistance in the ELRI element increases,
This changes the state of the MEMS or programmable component.

In at least one embodiment, the conductive path can comprise an ELR material with multiple layers. Each layer can have a specific (possibly different) thickness. The changing layer can be attached to the top layer, making the top layer more rigid. Depending on the temperature change, the conductive properties of the different layers also change. For example, the top layer is directly coupled to the changing layer, so it has the lowest resistance and functions as a superconductor or full conductor at a higher temperature than the other layers. As the temperature decreases, the resistance of the layer following the top layer decreases and behaves like a superconductor or perfect conductor in order of proximity to the changing layer. As can be seen, changes in temperature change the conductive properties in the different layers, resulting in changes in ELRI Jc and Hc.

In various embodiments, the MEMS includes one or more internal passages consisting of a first MEMS layer made of ELR material and a second MEMS layer made of a modifying material coupled to the first MEMS layer made of ELR material. be able to. MEMS are pressure sensors, temperature sensors, optical sensors, vibration sensors, accelerometers,
A humidity sensor, an electric field sensor, and / or a sound sensor can be used to detect one or more environmental parameters.

Various embodiments for devices having a power supply and an IC are provided. The IC may have one or more conductive paths made of ELRI having a first layer made of ELR material and a second layer made of the modifying material coupled to the first layer made of ELR material. . The IC can also have a MEMS connected to a set of passive components via one or more conductive paths. In some cases, the MEMS can include an RF circuit coupled to an RF antenna 4450 on the IC. MEMS also includes one or more variable transmission lines, waveguides, resonators, quasi-optical components,
Variable inductors, variable capacitors, and electromechanical filters and / or other components described above may be included.

ELRI for passive components MEMS to produce near ideal components
Otherwise it is not available for integration. Here, a network of passive components is designed, some are switches, and some MEMS are sensors that are exposed to change environmental constraints. With ELRI connecting with very few parasitics, integrated near-ideal components will function as an extension of MEMS with multiple changing parameters or attributes. The ability to design multi-MEMS devices close to virtual ideals on ICs provides an order of capacity rather than size that opens up a vast opportunity to detect and respond electronically.

Using ELRI technology in IC products synergizes the use of other ELRI technologies. Examples include ELRI to connect a MEMS circuit to an analog circuit on the IC, "3D" interconnection on the IC (connecting the IC to the mounting board), ELRI for power distribution on the IC, power distribution on the mounting board Including but not limited to ELRI. These and other ELRI technologies can further improve the performance of IC products.

FIG. 45-F is a flowchart 4500 illustrating exemplary operations for fabricating conductive paths, ELRI MEMS, and / or ELRI components on an IC. ELRI can be manufactured based on the type of material, the application of ELRI, the size of components using ELRI, the operating requirements of devices and machines using ELRI, and so on.

In the example shown in FIG. 45-F, a first deposition operation 4510 deposits a first layer of very low resistance (ELR) material on an IC, substrate, or SiP. According to various embodiments, the first layer can include YBCO or BSCCO. To form the ELR interconnect, a second layer of material to be modified is deposited in a second operation 4520 on the first layer of ELR material. The second layer is chromium, copper, bismuth,
Cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium or silver can be included. Materials used as the first or base layer of ELRI and / or ELRI
The material used for the changing layer may be selected based on various considerations, desired operating characteristics, and / or manufacturing characteristics. Examples include cost, performance goals, available equipment,
Includes available materials and / or other considerations and properties. In processing operation 4530, ELR
The interconnect is processed to form various components, conductive paths, and / or interconnects. For example, in some embodiments, a MEMS ELRI, an ELRI passive component, an ELRI RF antenna, a power distribution system, and / or a signal bus having one or more conductive paths that can route signals are formed. be able to.

In addition to the systems, devices, and / or applications described herein, one of ordinary skill in the art may use other systems, devices, and applications that include conductive paths to utilize the ELRI described herein. You will understand what you can do.

Part C Integrated Circuit RF Devices Refer to Figures 1-36 and Figures 37-G through 41-G for descriptions in this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Various embodiments of the present invention generally relate to very low resistance interconnects (ELRI), such interconnects including modified, open, and / or other ELR materials. In some embodiments, the ELRI can have a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the first layer of ELR material. . ELRI can be used in various systems and methods to produce various improvements. Some examples where various efficiencies are generated include systems and methods that use ELRI for radio frequency (RF) circuits on ICs, systems and methods that use ELRI for RF antennas on semiconductor ICs, monolithic micros Systems and methods for using ELRI in passive elements of RF transmitter and receiver circuits on wave ICs (MMICs), systems and methods using ELRI embedded in RF circuit functions on semiconductor ICs. It is not limited to.

Some embodiments provide an RF circuit on an IC that can use ELRI material to provide a conductive path for the RF circuit on the IC. The use of ELRI material can provide higher Q capability. As described above, an IC using ELRI in a conductive path can reduce the number of active circuits and / or reduce the semiconductor area of various circuits according to a desired application. In some embodiments, ELRI can be used to connect multiple individual blocks of RF circuitry and / or other technologies (including other ELRI technologies).

According to various embodiments, ELRI material can be used to provide a conductive path for RF antenna configurations on ICs. The resulting antenna topology can take up less area than conventional substrate configurations that do not use ELRI materials. Also, the RF antenna can be placed in an isolated location without incurring a wiring resistance penalty, and does not necessarily have an off-chip interface, thereby achieving higher Q performance. in this way,
The RF antenna topology obtained using ELRI material for the conductive path reduces the use of active circuitry and, consequently, the use of semiconductor areas for various circuits.

In one or more embodiments, ELRI can be used for passive elements of RF transmit and receive circuitry on the MMIC. By using ELRI material that implements a conductive path that connects to passive elements and / or RF circuits, the signal can propagate with a wavefront delay time constant close to zero. As a result, signal delays between the various functional elements can be substantially eliminated or significantly reduced. In some embodiments, ELRI material can form very high Q transmit and receive circuits.

In addition, various embodiments of the present invention are provided for systems and methods for using ELRI with embedded RF circuit functionality on a semiconductor IC. In some of these embodiments, ELRI material can be used to achieve a conductive path for signals that propagate with a wavefront delay time close to zero. As a result, between the embedded RF circuit function and the subsystem that wraps that function, or
The delay of the interface signal between the subsystem blocks connected to the embedded function can be greatly reduced or eliminated. This is done with respect to the embedded RF circuit function, with very little parasitic dispersion, regardless of the actual physical location, as the computer model shows, so that each connection signal has its own embedded node. Create various blocks like virtual blocks in the sense that they appear to touch.

ELRI can be manufactured based on the type of material, the application of ELRI, the size of components that employ ELRI, the operating requirements of devices and machines that employ ELRI, and so on. In this way, the materials and / or E used as the ELRI base layer during design and manufacture
The materials used as the changing layer of the LRI vary according to various considerations, desired operating characteristics and / or
Or it can be selected based on manufacturing characteristics.

Although various suitable shapes and configurations are shown and described herein for modified ELR layouts and / or placements, many other shapes are possible. These other shapes can vary in material thickness, different layers, ELR films with multiple adjacent modifying layers, multiple ELR films modified by a single modifying layer, and other three-dimensional structure differences In addition, it includes different patterns, configurations and layouts for length and / or width. Therefore, the appropriate modified ELR
Can be used depending on the desired application and / or characteristics.

According to various embodiments of the present invention, the ELR RF circuit and / or antenna can be implemented on an IC. RF circuits and / or antennas have been modified, opened and / or other new ELR materials to realize conductive paths that connect RF circuits to RF circuits and / or antennas and conductive paths within antennas ELRI material like can be used. It can be appreciated by those skilled in the art that the use of ELRI materials can have many advantages over conventional interconnect materials.

Various examples of the invention are described with reference to “modified ELR materials” and / or various configurations of modified ELR materials (eg, modified ELR films, etc.), although The improved ELR material described in is modified ELR material according to various embodiments of the present invention (eg, modified
It is understood that ELR material 1060), apertured ELR material, and / or other new ELR materials can be used. As described herein, these improved ELR materials have at least one improved operating characteristic and, in some examples, operate in the ELR state at temperatures above 150K.

For example, by using ELRI, the RF antenna can be placed in an isolated location, without incurring an interconnect resistance penalty and without the need to use an off-chip interface, thereby providing high Q performance. can do. Thus, the ELRI in the conductive path
The RF antenna topology resulting from the use of materials can reduce the semiconductor area of fewer active circuits and thereby various circuits. In some embodiments, ELRI can be used to connect multiple individual blocks of RF circuitry and / or other technologies (such as other ELRI technologies). ELRI also generates very low losses, otherwise RF antenna architectures and circuits that cannot be used in ICs can be devised and implemented, and the amplification and filtering of active circuits is substantially reduced. be able to.

As another example, the use of ELRI can also allow IC designs to place RF antennas closer to RF circuits on ICs with improved conductive interconnects. This simplifies the design requirements and can, for example, avoid special semiconductor processes and off-package designs, tend to produce higher Q and result in lower parasitic losses. In addition, new RF products such as single-chip RF transmitters with high Q that were not feasible with the prior art can also be developed, allowing handheld devices to handle a large number of remote channels. Enable.

FIG. 37-G shows the use of ELRI material to realize a conductive path for an RF circuit on IC 3710. In conventional integrated circuits, RF circuits are implemented off-chip from the controller function because the isolation requirements impose special and more expensive semiconductor processes. However, in many cases, these methods are not effective for realizing a digital circuit such as a controller function. In contrast, EL
When the RI connects the RF antenna 3720 directly to the RF circuit, there is less parasitic loss, so the RF circuit
It can be implemented on the same chip IC 3710 with digital circuitry without the need for special isolation or other special expensive semiconductor processes.

According to various embodiments of the present invention, when ELRI material is used to implement RF circuit conductive paths 3730 and / or 3760 on IC 3710, compared to conventional circuits that do not use ELRI material, Higher Q ability can be obtained. In some embodiments, ELRI can be used to connect other technologies, including each block of RF circuitry as well as other ELRI technologies. in this way,
RF circuits obtained using ELRI material in the conductive path can be used in various circuits, reducing active circuitry and possibly reducing semiconductor area. In some embodiments, the RF circuitry is a microprocessor, microcomputer, microcontroller, digital signal processor (DSP), on-chip system (SoC), disk drive controller, ASIC, ASSP, FPGA and / or Bluetooth ( Registered trademark), wireless USB, Wi-Fi (
Other semiconductor ICs in various systems such as wireless LAN) or other RF transceivers / interfaces
Can be realized above. According to certain aspects, the use of ELR as a power and ground plane can reduce noise coupling from digital to analog circuits.

As shown in FIG. 37-G, in some embodiments of the present invention, an IC mounting substrate, an RF antenna 3720,
And IC 3710 including RF circuitry. The IC mounting substrate can have multiple layers and one or more conductive paths 3730 for signal routing. One or more conductive paths 3730
Can be made from a modified very low resistance wiring (ELRI) having a first layer of very low resistance (ELR) material. Also, the one or more conductive paths 3730 can have a second layer of a modifying material coupled to the first layer of ELR material. of course,
The modified ELRI can take the appropriate formation and shape.

In a conventional integrated circuit, the RF antenna is mounted outside the chip due to the controller function because of parasitic losses. In contrast, ELRI tends to have low parasitic losses because it connects the RF circuit directly to the RF antenna 3720, and the RF antenna 3720 can be implemented on the same chip along with the RF circuit and the digital circuit of the common device. it can.

Those skilled in the art will appreciate that one or more of the advantages may be obtained by various embodiments of the present invention. For example, as described, the use of ELRI can provide a conductive function that reduces or eliminates the penalty of parasitic losses (eg, due to wiring resistance). As another example, ELRI produces very low losses so that RF circuits that are otherwise ineffective and impractical can be devised and implemented. New RF products such as single-chip RF transmitters with high Q that could not be realized with the prior art can also be developed, allowing handheld devices to handle a large number of remote channels To. Some embodiments provide higher power efficiency due to small resistance losses. Some examples demonstrate increased sensitivity to analog and digital signals. Placing system function design elements can increase flexibility. Further examples demonstrate increased signal fidelity. Furthermore, embodiments can improve coordination between elements in the allocated band and increased information density. Yet another embodiment enables a new type of software and hardware logic that can be implemented on an IC or on select signal interference shielding.

Some embodiments of the present invention include an integrated circuit IC 3710 having RF components that can be implemented on an IC or IC mounting substrate. The RF component can include sub-circuits. As shown in Figure 38-G, the subcircuit should include an RF amplifier 3810, an RF filter 3820, and an RF controller 3830 (and other subcircuits) interconnected via one or more conductive paths 3840 Can do. Here, the conductive path 3840 includes a modified ELRI having a first layer of ELR material and a second layer of modifying material coupled to the first layer of ELR material. According to various embodiments, the first layer can include YBCO or BSCCO. The second layer can include chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium. Interconnects can be composed of multiple levels / multiple layers of interconnects, some of which ideally consist of modified ELRI (or otherwise conventional metal), each The conductive vias are selectively disposed through the dielectric so that each is continuously connected to the conductive path, isolated from the other adjacent levels by the dielectric.

In some embodiments, the RF component and the RF antenna 3720 can be mounted on the same chip. For example, an IC mounting board can also have a first layer of antenna made of ELR material and ELR
A second layer of antenna made of a material coupled to a first layer of antenna made of material;
An RF antenna 3720 can be included. As a result, RF components do not require separation by mounting on a separate chip.

In some examples, a wireless device may be implemented that includes a power source, a set of digital circuits, and / or an RF transceiver that utilizes ELRI technology. The wireless device may be a device that can use an RF transceiver or RF circuit or a handheld transceiver. Examples include wireless LAN devices, spread spectrum devices, mobile phones, wireless phones, wireless USB devices, Bluetooth (registered trademark) devices, wireless earphone sets, hearing aids, medical transponders, secure garage door openers, radio frequency identification (RFID)
) Tags, thermostats or remote security controllers that can adjust security conscious home, commercial or industrial devices, handheld computer interfaces, automotive key transmitters, RF interface security devices, audio / video transceivers, etc. It is not limited to these. Interface security devices include universal remote security controllers for controlling property security (safe garage door opener, security alarm set / reset / query, thermostat programming, general electrical control, etc.) and car key transmitters. Wireless devices also include handheld transceivers for special applications such as meter reading, inventory inquiry with special RFID tags, handheld computer interfaces (Bluetooth® program actuators and data transceivers), etc. Get.

Wireless devices that use ELRI for RF circuits can include various improvements. For example, a spread spectrum device can be constructed using instructions for individual channels that are larger in size (eg, 100 or more individual channels). In addition, mobile phones, wireless phones, Bluetoot
h (registered trademark) devices, tablets, other computers, and other Wi-Fi devices
Will have greater reception status / distance. In some cases, the reception state / distance may be on the order of magnitude greater than the reception state / distance available in the prior art.

In some embodiments, the RF transceiver can be coupled to a set of power supplies and digital circuitry. In some cases, the RF transceiver can be located on the same chip as the digital circuit. The RF transceiver can include an RF antenna 3720 coupled to an RF circuit. In accordance with various embodiments of the present invention, an RF circuit is modified having a first layer of ELR material and a second layer of modifying material coupled to the first layer of ELR material. One or more sub-circuits interconnected via one or more conductive paths 3730 and / or conductive paths 3760, including ELRI. In at least one embodiment, RF antenna 3720 includes a first ELR layer of an RF antenna made of ELR material, a second ELR layer of an RF antenna made of a modifying material coupled to the first ELR layer of the RF antenna made of ELR material, and Can be included.

With current technology, monolithic microwave integrated circuits (MMICs) are only at the integrated MSI & LSI level, as it is necessary to turn off passive device chips that can use higher frequencies. Until now, the cost of semiconductor technology required for transistors that can use microwave frequencies has not been helped by products that require VLSI. In one or more embodiments of the present invention, ELRI can be used in the passive elements of the RF transmitter and receiver circuits on the MMIC. By using ELRI, it is possible to integrate all functions on the same chip (eg, MMIC does not include off-chip passive devices or interfaces), thereby generating an MMIC that translates that function. In some embodiments, the MMIC may include a microprocessor, microcomputer, microcontroller, DSP, system on chip (SoC), disk drive controller, ASIC, ASSP, and / or FPGA.

By using ELRI material to implement passive elements and / or conductive paths connecting RF circuits, the signal can propagate with a wavefront delay time constant close to zero. As a result, signal delays between the various functional elements can be eliminated or significantly reduced. In some embodiments, the ELRI material used in passive element 3740 forms transmitter and receiver circuits with very high Q. EL for passive elements in high RF transmitter and receiver circuits
RI provides passive elements, and the negligible resistance of the interconnect enables a microwave frequency circuit that generates the functionality of a VLSI circuit. All RF circuitry can be done on an MMIC, an added microcontroller or DSP, so its capabilities can be converted in the same process.

The very high Q amplification (VHQA) that can be generated by using ELRI can enable transmission in a much narrower band and very low power consumption at very high frequencies. This level of VHQA is up to 100GHz and above in various bands in military use, with walky key talkies for personal communication with consumer products (2.4GHz range), to be used with frequency hopping Can do. In other embodiments, new measurement, security and data transmission systems and methods such as security sensor detection and RADAR can also be used. Very high frequency transceivers can also be made for industrial and medical data transmission and control in new high frequency bands.

Using ELRI technology in IC products makes it synergistically advantageous to utilize other ELRI technologies.
Examples include ELRI for connecting MEMS circuit 3770 to analog circuitry on IC 3710, ELRI for power distribution on IC 3710, ELRI for 3D interconnect 3730 on IC (connecting IC to mounting board 3750, package 37
50 ELRI "3D" interconnect 3730), MEMS E such as ELRI for power distribution on the mounting board
Includes LRI technology. All that further improves the development of all ELRI technologies, especially RFI
Improve the superior performance of C products.

Various embodiments of the present invention include monolithic semiconductors (eg, silicon, GaAs, SiGe, GaN).
, SOS, SOI, etc.), multiple monolithic semiconductors made of "3D" stacks, or M on IC 3770
MMI made from EMS and / or other novel manufacturing methods including IC mounting substrate and MEMS on SiP
Provide C. An MMIC is a set of ELRIs, one or more passive elements (eg,
RF filter 3820 having laser programmable ELRI resistor 3910, ELRI capacitors 3920 and 3740, RF oscillator 4090, RF amplifier 3810, RF controller 3830 and / or RF antenna 3720, other RF block 4030 and support block). According to some embodiments, EL
The RIs can include a first layer made of ELR material and a second layer made of a material to be modified that is bonded to the first layer made of ELR material. In some embodiments, RF amplifiers are used by ELRIs.
Can be connected to RF filter. Similarly, the RF antenna 3720 is RF by ELRIs 3840.
The RF controller 3830 can be connected to the amplifier 3810, the RF filter 3820 by the ELRIs 3840
Can be connected to.

In some embodiments, the RF antenna 3720 has one or more conductive paths during one or more levels of interconnection. RF antenna 3720 includes a first antenna layer made of ELR material (eg, YBCO or BSCCO) and a modified material (eg, chrome, copper, bismuth, cobalt, vanadium, titanium) coupled to the first antenna layer made of ELR material. A second antenna layer comprising rhodium, beryllium, gallium, selenium), and a modified antenna E
Includes LRI. In addition, the RF antenna 3720 can be mounted on another chip through the RF controller 383.
Does not require isolation from zero.

The MMIC can be configured in various embodiments to provide high frequency switching, microwave mixing, low noise amplification, or power amplification. The MMIC is also configured to operate at microwave frequencies in the range between 300 MHz and 300 gigahertz. In at least one embodiment, the MMIC can operate at an analog frequency of 400 MHz or higher. In some embodiments, the MMIC can be part of a wireless device as described above.

Traditional techniques use interconnects that are usually formed from aluminum or copper-based metals. Unfortunately, these interconnects have parasitic resistance. Parasitic resistance becomes critical in timing and often limits the location of embedded functions to the extent that some multiple functions are prohibited. Also, due to the proliferation of parasitic resistances, embedded program loading and parameter settings are hampered or limited by the addition of additional resistances in the facilitating circuit, so embedded RF functions cannot generally be provided. . In contrast, various embodiments of the present invention provide systems and methods that use ELRI in RF circuit functionality embedded on a semiconductor IC 3710. The use of ELRI reduces or eliminates the limitations found with the use of traditional technologies and enhances the implementation of the IC 3710 RF circuit.

In some embodiments, ELRI material can be used to implement a signal conduction path that propagates with a wavefront delay time constant close to zero. As a result, the delay of the interface signal between the embedded RF circuit function and the subsystem that wraps that function, or between the subsystem blocks connected to the embedded function, can be greatly reduced or substantially eliminated. it can. This means that each connected signal has its own embedded node, as it does as the computer model shows, with very little parasitic dispersion, regardless of the actual physical location with respect to the embedded RF circuit function. Create various blocks like virtual blocks in the sense that they appear to touch. In some embodiments, the embedded RF circuit function may include an embedded microprocessor, microcomputer, microcontroller, DS
It can be realized on P, SoC, ASIC, dedicated IC, FPGA, semiconductor IC with the same or various kinds of embedded functions.

Various embodiments of the present invention may provide one or more advantages. For example, by using ELRI routing in an embedded RF function IC design, there is no power loss due to buffering requirements in the art, and there is no significant skew with the global signal, without significant skew. A circuit can be fabricated. Design companies with little RF design experience can add RF circuitry to the SoC. In addition, many current RF functional IC products have been re-embedded to embed ELRI RF functionality and achieve higher performance and lower power usage (eg, operating voltage less than 0.25 volts and very low quiescent current in op amps). Can be designed.

In some cases, the embedded functionality can be placed in a more convenient location on the IC in any aspect of the design. As a result, the development and design of embedded RF functions does not require a different customized interface buffer (of traditional technology), which usually depends on the most parasitic aspects of the enclosing SoC, Less can be suppressed. In addition, embedded functions can be designed more independently, and solutions from different sources can be more easily embedded, so the independent placement enabled by ELRI can be used in SoC development. Enable better "concurrent engineering". In some embodiments, the embedded RF function can be a “place and route” cell with an accompanying embedded tool package (especially for design companies with less RF design experience).

In some examples, the decision to use ELRI for embedded RF circuits may support the decision to use other applicable ELRI techniques. Examples are ELRI for power distribution, ELRI for clock routing, ELRI for SoC routing and board connection on the IC, ELRI for 3D interconnection on the IC
Including, but not limited to, ELRI for RF antennas on mounting substrates and / or others. Designers can use a variety of cost functions to select the appropriate combination to complete the optimization of the RF product.

In some embodiments, an IC 3710 having an IC substrate, a set of circuits 4010 (eg, analog or digital circuits) mounted on the IC substrate, and / or one or more programmable blocks 4020 provide. IC substrate is one in one or more layers of the substrate
It can have one or more conductive paths. The conductive path has a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the first layer of very low resistance (ELR) material, Can be configured with low resistance interconnect (ELRI). The first programmable block can be connected to the set of circuits via one or more conductive paths. The first programmable block was mounted on the substrate
One or more components, eg, digital signal processor (DSP) 4035, DS
RF transmitter 4040 coupled to P 4035 and / or embedded core 4 mounted on IC board
050 can be included, but is not limited to these.

According to some embodiments, the embedded core 4050 has one or more functions 4060.
Can be programmed to perform. In various embodiments, the embedded core 40
50 can be a microprocessor, microcomputer, microcontroller, GPU, data flow processor, or DSP.

Components made from ELRI (eg ELRI RF circuit 4070, ELRI RF antenna 4070,
A set of programmable ELRI blocks including ELRI routing 4080, ELRI RF amplifier, ELRI RF filter, ELRI RF controller, etc.) can be implemented on the IC substrate. Depending on the desired application, ELRI blocks can be programmed at the design level, or field
Programmable or programmable by software after the system is operating. In some embodiments, an IC with embedded functionality 4060 may be part of the wireless device described above, for example.

Figure 41-G shows an RF circuit, RF antenna, MMIC with passive ELRI components, and / or IC
4 is a flowchart 4100 illustrating example operations for manufacturing embedded RF circuit functions using the above ERLI. ELRI can be manufactured based on the type of material, the application of ELRI, the size of the component using ELRI, the operating requirements of the device or machine using ELRI, and so on.

In the example shown in FIG. 41-G, the first deposition operation 4110 deposits a first layer of very low resistance (ELR) material on the IC. According to various embodiments, the first layer can include YBCO or BSCCO. To create the ELR interconnect, a second layer of material to be altered is deposited during the second deposition operation 4120 on the first layer of ELR material. The second layer can include chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, or silver. The material used as the first or base layer of ELRI and / or the material used as the ELRI modifying layer can be selected based on various considerations, desired operating characteristics and / or manufacturing characteristics . Examples include cost, performance goals, available equipment, available materials, and / or other considerations and characteristics. In processing operation 4130, the ELR interconnect is processed to form a signal bus having one or more conductive paths that can route signals on the RF antenna, power distribution system, and / or substrate.

In addition to the systems, devices, and / or applications described herein, those skilled in the art will recognize that applications including other systems, devices, and conductive paths can utilize the ELRIs described herein. You will understand.

Part D Integrated Circuit Routing Refer to Figures 1-36 and Figures 37-H through 43-H for descriptions in this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Integrated circuit components such as power distribution networks, clock distribution networks, and other signal distribution networks that have been modified, opened, and / or formed of other new, very low resistance (ELR) materials be written. ELR materials can be, for example, membranes,
It may be a tape, foil, or nanowire. ELR materials provide very low resistance to current at temperatures higher than the normal temperatures associated with conventional high temperature superconductivity (HTS) and improve the operating characteristics of integrated circuits at these higher temperatures. While various embodiments of the present invention have been described with reference to various configurations of “modified ELR materials” and / or modified ELR materials (eg, modified ELR films, etc.), The improved ELR materials described in the document are modified ELR materials (eg, modified ELR materials 1060, etc.), apertured ELR materials, and / or other new, consistent with various aspects of the present invention. It will be understood that it is used with ELR material. As described herein, these improved ELR materials have at least one improved operating characteristic. This operating characteristic includes, in some embodiments, operating in the ELR state at temperatures above 150K.

FIG. 37-H shows an ELR material base layer 3704 and a modifying layer 37 formed on the ELR material base layer 3704.
06 and a conductive path 3700 at least partially formed of a modified ELR film, such as a film having
It is the schematic which shows the fracture | rupture figure. Various suitable modified ELR membranes are described in detail herein. As will be appreciated, the modified ELR film can include one or more ELR material layers and / or
It can have one or more changing layers, or can take other suitable configurations or geometric shapes. Such conductive paths use multiple levels when integrated circuits are implemented, with the exception of specific connection vias designed to connect each successive conductive path at multiple levels of interconnection. Insulated between them to form a convenient density and connectivity. Conductive paths, for example, distribute power and are compatible with microprocessors, microcomputers, microcontrollers, digital signal processors, system LSIs, disk drive controllers, memories, ASICs, dedicated ICs, FPGAs, or modified ELR films Can be used to propagate signals between circuit components in other semiconductor integrated circuits.

As shown in the example of FIG. 37-H, a conductive path is formed on the base layer 3704 of ELR material and the base layer 3704.
And a modifying layer 3706 formed through any suitable process. Conductive path is substrate 37
On 02, for example, it can be formed on a dielectric substrate of an integrated circuit. Formed with a modified ELR film, the conductive path 3700 is the temperature (room temperature or ambient temperature (~ 2) used in conventional HTS materials
There is little or no resistance to current flow in the conductive path under appropriate conditions such as temperatures higher than 1 ° C)).

The material or dimensions of the substrate 3702 can be selected based on various factors. For example, selecting a substrate material with a higher dielectric constant generally reduces the capacitance seen by the transmission line and reduces the power required to drive the signal. If you are an expert,
It will be appreciated that the substrate may be formed with different materials and different shapes to achieve the desired characteristics and / or operational characteristics.

In some examples, the modified ELR conduction path is the transition temperature (~ 80-135K) of conventional HTS materials
And provides a very low resistance to current flow at temperatures between room temperature (~ 294K). In these examples, the conductive path is a cooling system such as a refrigerator or cryostat used to cool the conductive path 3700 to the critical temperature of the modified ELR membrane type used in the conductive path 3700 (FIG. Not shown). For example, the cooling system can cool the conductive path to the same temperature as that of liquid chlorofluorocarbon, to the same temperature as frozen water, or to the same temperature as other temperatures described herein. It may be a simple system. That is, the cooling system can be selected based on the type and structure of the modified ELR film used for the conductive path 3700.

FIG. 38-H is a diagram illustrating an exemplary model of a conductive path formed from a modified ELR film. In some examples, the model has an input “I”, an output “O”, and Ri, Ro, which are the respective resistance values of the material connected to the input and output ends of the conductive path formed from the modified ELR film. Including. Rv1, Rv2, Rv3, Rv4
Is the resistance value of the via and / or the other connection of the outer skin of the conduction path. Rw1 and Rw2 are resistance values of the internal path of the changed ELR film. Rs1-Rs4 and CSI-Css are transmission line models of the outer skin of the conductive path. The element encompassed by the dashed line 3802 can be replicated in series at the position P of each via (or other connection) on the conductive path. The example in FIG. 38-H shows Bi that is connected to the conductive via (indicated by Rv4) and the output O-destination series path. In some examples, the model is
Multiple elements including inductors can be included.

Due to the very low resistance of the conductive path consisting of the modified ELR film, the signal propagating through the conductive path has a near-zero wavefront delay time constant, thereby minimizing drive strength requirements to reduce power consumption Keep it down. Since the signal propagates through the crystal structure of the modified ELR film, the signal tends to achieve minimal delay in a manner similar to the propagation of an optical waveguide that is not disturbed by the external environment's capacitance. However, the signal also propagates to the outer skin of the modified ELR membrane, which exhibits normal resistance and ambient environmental capacitance. Therefore, the modified ELR
A signal propagating through the crystalline structure of the membrane can change the voltage at the node before it reaches the destination node and the skin achieves a fully altered voltage.

Decreasing drive strength requirements may also reduce the size of transistors that conduct through conductive paths formed from ELR materials with altered drive signals. A smaller transistor size can reduce the silicon area required for the integrated circuit layout, enabling further miniaturization of the integrated circuit and a more efficient circuit. Another advantage of conductive paths formed from modified ELR materials is the reduced burden or importance of timing constraints in circuit design due to reduction delays during signal propagation.

As described herein, many integrated circuit devices and systems can utilize, use, and / or incorporate modified ELR conductive paths that exhibit very low resistance values at high or ambient temperatures. That is, a device or system that substantially provides a path for the flow of electrons may incorporate the modified ELR conductive paths described herein. In the next section, some exemplary devices, systems, and / or applications are described. Those skilled in the art have some unique and novel advantages that do not seem obvious without consideration, but other devices, systems, and / or applications may also have changed ELRs.
It will be appreciated that a conductive path may be utilized.

In some examples, the integrated circuit power distribution network has been modified as described herein.
ELR conductive paths can be used. FIG. 39-H is a diagram of an example power distribution network 3900 formed with modified ELR conductive paths. As shown in Figure 39-H, the modified ELR material is a voltage source (V1) distributed around the integrated circuit with the dispersion voltage decreasing to near zero due to the low resistance of the modified ELR material. -V4) and used to implement a conductive path such as conductive path 3902 for ground (G) connection. In some examples, the modified ELR conduction path can be directed, i.e., because the current flows along a specific surface of the modified ELR material, FIG.
The 9-H power distribution network 3900 can utilize two substantially orthogonal layers coupled together by vias, such as via 3904, to send power through the integrated circuit.

Conventional integrated circuit power distribution networks are divided into a number of power domains, each power domain having a particular voltage used by the components of the integrated circuit. In a conventional integrated circuit, i.e., a circuit that uses a metal conductive path, each power domain typically has its own conductive layer because of the resistive material used in the conductive path. These conventional conductive paths have a fairly large resistance that results in power loss due to heat (I ² R) and large or additional transistors used to mitigate the propagation delay caused by the resistance. The “brute force” required to drive the resistance signal line causes noise in the distribution conductor and must be decoupled. In many cases, separate voltage domains are designed to isolate particularly noisy circuits. However, due to the superior conductivity of the modified ELR material in an integrated circuit that uses a modified ELR conduction path, all voltage and ground domains do not require an additional layer in Figure 39-H. It can be routed into two orthogonal layers as shown. For example, the voltages V ₁ , V ₂ , V ₃ and the ground network are shown in FIG.
-H two-layer power distribution network 3900 can be used to distribute everything on the integrated circuit.

Many other advantages are obtained by using conductive paths formed from modified ELR materials. For example, a power distribution network using modified ELR materials not only reduces power consumption, but also reduces “IR drop” to a negligible amount, which in turn allows for lower operating voltages. This lower operating voltage reduces transistor parasitic leakage, thereby improving overall circuit efficiency. Also, since the signal in mELR propagates very quickly, noise pulses on the distribution network immediately propagate to all distributed decoupling capacitances. If a modified ELRI is used to route the signal, noise interference is much less because a “brute force” driver is not needed.

The power distribution network formed from the modified ELR conductive path can be, for example, a microprocessor, microcomputer, microcontroller, DSP, SoC, disk drive controller, memory, ASIC, ASSP, FPGA, modified ELR film or material It can be realized by another semiconductor integrated circuit capable of providing compatibility.

In some examples, the integrated circuit clock distribution network may utilize a modified ELR conductive path as described herein. FIGS. 40A-H are diagrams illustrating a clock distribution network formed with modified ELR conductive paths. FIGS. 40A-H include a clock driver 4002 coupled to a trunk line 4004 of the clock distribution network. As shown in FIGS. 40A-H, a clock distribution network formed from modified ELR conductive paths can distribute clock signals from clock driver 4002 to clocked components of an integrated circuit such as gate 4006. The main line 4004 is connected to a substantially vertical branch channel, for example, a branch channel 4008 that distributes the clock signal to the integrated circuit components. The clock distribution network of FIGS. 40A-H also includes a parallel branch path, such as branch 4010, that can further distribute the clock signal to other circuit components. The branch channel 4010 can be coupled to the trunk line 4004 via vias such as vias 4012 that are substantially connected to orthogonal layers.

One advantage of using a modified ELR conducting path is that the clock signal propagating through such a network has a near-zero wavefront delay time constant approach and does not require an extra buffer or delay circuit. To minimize propagation delays and clock skew between synchronous circuits.

FIGS. 40B-H are diagrams showing alternative layouts showing a clock distribution network formed with modified ELR conductive paths. As shown in FIGS. 40B-H, the clock distribution network includes branches 405.
It has one central trunk 4054 coupled to the clock driver 4052 to feed vertical branches such as six. Branch 4056 then provides a clock buffer to a clocked component such as gate 4058. In one embodiment, the modified ELR conduction path can be directed, ie, the current flows along a particular surface of the modified ELR material, so that FIG.
The 0A-H and 40B-H clock distribution networks can utilize two substantially orthogonal layers coupled together by vias such as vias 4012 and 4060 to route clock signals through the integrated circuit. .

FIGS. 40C-H are diagrams showing an alternative layout of a clock distribution network formed with modified ELR conductive paths. As shown in Figure 40C-H, the clock distribution network
It has one central trunk 4074 coupled with a clock driver 4072 to supply vertical branches such as 076. Branch 4076 is then the geometric sequence H- of the clock distribution network.
Supply to clocking components such as gate 4078 through the structure. In one embodiment, the modified ELR conductive path can be directed, ie, the current flows along a particular surface of the modified ELR material, so that FIGS. 40A-H, 40B-H, and 40C The -H clock distribution network can utilize two substantially orthogonal layers coupled together by vias such as vias 4012, 4060, and 4080 to route clock signals through the integrated circuit.

Advantages of using modified ELR material for the clock distribution network's conductive path include, for example, significant differences from conventional resistive circuit networks due to the added capacitance by widening the conductive path to reduce buffering and resistance. Includes power reduction and speed loss reduction. Also, clock skew and insertion delay are significantly reduced, thereby reducing the burden or importance of design constraints. Similarly, a multi-phase clock architecture can be implemented and can be performed synchronously with significantly reduced clock skew.
There are also advanced synchronous integrated circuit architectures that do not require a propagating clock signal. These circuits use special software to guarantee their simultaneity. Since these circuits are clocks, the ELR conductive paths that have been changed to their synchronization control signals can be used to achieve similar advantages.

Clock distribution networks formed from modified ELR conductive paths include, for example, microprocessors, microcomputers, microcontrollers, DSPs, SoCs, disk drive controllers, memories, ASICs, dedicated ICs, FPGAs, and modified ELR films Alternatively, it can be realized on another semiconductor integrated circuit which can be made compatible with the material.

In some examples, the analog components of the integrated circuit can be combined with the compensation circuit using a modified ELR conductive path as described herein. Figure 41-H shows the modified E
FIG. 3 is a block diagram illustrating analog components coupled to a compensation circuit by LR conductive paths. The example block diagram shown in FIG. 41-H includes analog components such as amplifiers such as amplifier 4102 coupled to compensation circuits 4104, 4106. As mentioned above, in one embodiment,
The modified ELR conductive path is directed, i.e., the current can flow along a specific surface of the modified ELR material. Thus, in the example of FIG. 41-H, analog components use two substantially orthogonal layers, such as 4110, 4112, connected to each other by vias, such as via 4108, to send signals through the integrated circuit. The conductive path is used to couple to the compensation circuit in a state that can be realized.

Analog circuits are usually more sophisticated and convenient when a compensation signal is provided from the compensation circuit. However, conventional conductive paths such as aluminum and copper introduce significant resistance, degrade the compensation signal, and reduce overall system performance. One advantage of using a modified ELR conduction path to propagate signals between the analog component and the compensation circuit is that it has a time constant close to zero, thus minimizing resistive interference in the compensation process. is there.

Furthermore, conventional integrated circuits containing analog components are usually orientation sensitive, that is, they must be spatially balanced. When the circuit is unbalanced, the resistance of the conductive path degrades performance and functionality. Formed with modified ELR material,
Implementing a conductive path with reduced resistance eliminates most of the problems of discrete analog components and integrated circuit location. This allows other considerations such as space considerations to be taken into account when designing the circuit.

In some examples, the memory conduction path can be implemented using a modified ELR film as described herein. For example, FIG. 42-H is a block diagram of an example memory that implements conductive paths with modified ELR conductive paths. In the example of Figure 42-H, the memory is a low threshold, high speed memory "
Use a modified ELR conduction path for the “read” function. Each memory cell 4202 is a bit line
4204 is connected to address lines such as 4206 and 4210 and vias such as via 4208. The bit lines 4204, 4206 are connected to a sense amplifier 4212 to enable low voltage detection of the bit line.
Is bound to.

The speed and accuracy of a semiconductor memory is based on memory cell voltage detection. In some examples, a pair of bit lines is connected to all cells in a particular row of cells. Column (col
umn) When the select line, eg, line 4210, is valid, the complementary output of the memory cell 4202 of the selected column communicates with each bit line 4204 and 4206. Memory cell transistor is bit line 42
When driving 04 and 4206, the sense amplifier 4212 distinguishes and outputs as soon as possible which bit line is high and which bit line is low. The time it takes to charge a line where the sense amplifier can detect the difference is the resistive wiring, designed cell size (smaller cells create smaller drives) and row length (memory cell drive) In order to do this, longer lines cause more resistive capacitive loading), which can be compromised with conventional technology. However, the bit line formed from the modified ELR film allows the memory cell transistors to drive the sense amplifier inputs immediately towards the stored voltage level, thereby enabling these at a much faster sampling rate. Only a minimum amount of power is required to detect and respond to the bit line.

Memory sensing amplifiers are designed for specific semiconductor technologies or specific memory row lengths. Conventional memories have limited row length due to parasitic resistance, thereby having smaller blocks. In order to achieve faster read times, conventional memories use high current consumption so that the sense amplifier reacts faster without waiting for the memory cells to drive the resistive bit lines to different logic states. Therefore, conventionally, higher power memory uses more power. As the signal propagates inside the modified ELR film structure, the memory is faster and more in the sense amplifier, with lower power usage, because the effects of resistance and capacitance encountered by the signal are reduced. It can be read accurately. In addition, the modified EL
Bit lines formed from R films allow much larger blocks and can use much less power to achieve higher performance.

In some examples, the data flow processor data bus and instruction lines may be implemented using the modified ELR conductive paths described herein. FIG. 43-H is a block diagram of an exemplary functional cell of a data flow processor 4300 with a conductive path formed from a modified ELR material. The data flow processor includes a functional cell 4302, a data bus 4306, and an instruction line 4304. Data bus 4306 and command line 4304 can be implemented using a modified ELR film as described herein.

The processor built by the dataflow architecture to define performance limits depends on the speed of the command signal propagating the instruction line to perform the function, and then
Data signals propagate on the data bus. Implementing a bus and command line with a modified ELR film allows the signal to have a near-zero wavefront delay time constant, thereby minimizing drive strength requirements to reduce power. Further, by reducing the propagation delay, the indication signal will perform its function substantially instantaneously and the data signal will propagate to the indicated destination instantaneously.

The operating frequency of a conventional data flow processor is limited by the propagation delay of the data bus and command line caused by the resistance of conventional conductors. Realizing conductors with modified ELR material provides orders of magnitude faster and data bus performance. Here, an array of interconnects is a strategy for realizing the architecture. For example, DSP applications can handle orders of magnitude faster frequencies, RF receivers can demodulate high RF transmission bands, and DSPs are more sophisticated in the same time span that a processor using conventional conductors can achieve Can be implemented (ie, with a large number of instructions).

In some examples, some or all of the systems and devices described herein may cause certain modified ELR materials used in applications to exhibit very low resistance values at temperatures below ambient temperature. Low cost cooling systems can be used in complex applications. As described herein, in these examples, the application allows the modified ELR conductive path to the same temperature as the liquid freon temperature, to the same temperature as the frozen water temperature,
Or a cooling system, such as a system that cools to the same temperature as other temperatures described herein (
(Not shown). Cooling system, application and / or
Selection can be based on the type and structure of the material used by the modified ELR film or application.

In addition to the systems, devices, and / or applications described herein, one of ordinary skill in the art will be able to make use of the modified ELR conductive paths described herein for other integrated circuits, systems, devices, and applications. Can understand. Also "membrane", "material
It is clear that the term “etc.” as used herein can be used in other structures or embodiments and is within the scope of the present invention.

Part E-Integrated Circuit SIP Device Refer to FIGS. 1-36 and FIGS. 37-I-41B-I for the description of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Various embodiments of the present invention generally relate to very low resistance wiring (ELRI), such as modified, opened, and / or other new ELR materials that incorporate ELRI.
In some embodiments, the ELRI can have a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the first layer of ELR material. . ELRI
It can be used in various systems and methods for making various improvements. Some examples where various efficiencies can be made include systems and methods for radio frequency antennas on IC mounting boards, power distribution on semiconductor IC mounting boards, system-in-package (SiP) boards, on semiconductor mounting boards Signal routing (e.g., control, clock, data, other signal types).

For example, when ELRI material is used to realize a conductive path for an RF antenna form on an IC mounting board, the required area tends to be smaller than the form of a conventional board that does not use ELRI material. . Furthermore, the RF antenna can be placed in an isolated location where high Q performance can be obtained without incurring a penalty in interconnect resistance. in this way,
The form of RF antenna connection resulting from the use of ELRI material in the conductive path can reduce the number of active circuits and thereby the semiconductor area of various circuits.

In some embodiments, ELRI material is used to implement a voltage source (including multiple voltage domains) and a conductive path for ground connections that are routed like buses to multiple parts of the board can do. These paths form virtual nodes as the distributed voltage change approaches zero. Also, all high frequency incidental noise spikes on the distribution conductor will instantaneously move to all nearby wet decoupling capacitances.

In addition to providing conductive paths for voltage power supplies, ELRI materials can be used for routing controls, clocks, data on IC mounting boards (or SiP boards) and other signals. ELRI material provides a very low resistance conductive path for signals. In some embodiments, the conductive paths are substantially orthogonal layers (except for the designed conductive vias) that are insulated to connect to IC pads, board pins, or other components in the package. Can be routed to a pair or pair.

ELRI can be manufactured based on the type of material, the application of ELRI, the size of components using ELRI, and the operating requirements of equipment and machines using ELRI. Thus, during design and manufacturing, the material used as the ELRI base layer and / or the material used as the ELRI modifying layer can be subject to various considerations, desired operating characteristics and / or manufacturing characteristics. You may choose based on:

FIG. 37-I is a diagram illustrating the use of ELRI material that implements a conductive path for the RF antenna 3710 on the mounting substrate 3750. In a conventional integrated circuit, the RF antenna is mounted off-chip from the controller function due to parasitic losses. In contrast, an ELRI that connects the RF circuit in the IC 3730 directly to the RF antenna 3710 has less parasitic loss, and the RF antenna 3710 must be mounted on the same circuit board 3750 as the RF circuit and IC 3730. Can do.

According to various embodiments of the present invention, when ELRI material is used to realize a conductive path for an RF antenna configuration on a mounting substrate 3750, the required area is small compared to a conventional substrate configuration. . . Further, the RF antenna 3710 can be placed in an isolated location where high Q performance can be obtained without incurring a penalty in interconnect resistance. Thus, the form of RF antenna connection resulting from the use of ELRI material in the conductive path can reduce the number of active circuits and the semiconductor area of various circuits thereby.

It will be appreciated by those skilled in the art that various embodiments of the present invention may obtain one or more advantages. For example, as just described, the use of ELRI to provide a conductive function means that the antenna configuration is generally less area than the conventional substrate configuration and isolated location without incurring a wiring resistance penalty. Allows to be placed in. As another example, ELRI has very low loss, so the RF antenna architecture can be devised and implemented to be more effective and practical. In some embodiments, the RF antenna design can significantly reduce active circuit amplification and filter. ELRI also
RF antennas that are more closely connected to the RF circuitry on the IC with improved conductive interconnects, allowing for designs that achieve higher Q with less parasitic loss, no special semiconductor processes, and IC implementation Design requirements can be met without turning off the substrate package. New RF products will also develop that handheld devices can accommodate multiple separate channels and were not feasible with prior art such as single chip RF transceivers with very high Q Can do.

According to various embodiments, the RF antenna 3710 can be a microprocessor, microcomputer, microcontroller, computer memory, DSP, SoC, disk drive controller, ASIC, dedicated IC, FPGA, neural network, MEMS, MEMS array, micro energy. The storage device can be realized by another IC mounting board on which the RF circuit antenna 3710 is mounted. As shown in FIG. 37-I, some embodiments of the present invention provide an integrated circuit (IC) that includes an IC mounting substrate 3750, an RF antenna 3710, and an RF circuit 3730. The IC mounting substrate 3750 can have multiple layers, one or more conductive paths 3720, and signal routing 3740. The one or more conductive paths 3740 include a first layer of very low resistance (ELR) material,
A modified very low resistance interconnect (ELRI) can be used. Also, the one or more conductive paths 3720 and 3740 can include a second layer of a modifying material coupled to the first layer of ELR material.

The radio frequency (RF) antenna 3710 can be mounted on the IC mounting substrate 3750. RF circuit
The 3730 can also be mounted on the IC mounting substrate 3750 and connected to the RF circuit 3730 via ELRI. In some cases, the RF antenna 3710 can be in close proximity to the RF circuit 3730 as compared to similar implementation requirements without ELRI. In some embodiments, the RF antenna can include a first layer of ELR material and a second layer of modifying material coupled to the first layer of ELR material.

According to some embodiments, the wireless device uses various configurations of ELRI and RF
A power supply coupled to the transceiver can be included. According to various embodiments, the RF transceiver is
A mounting substrate, an RF antenna, and an RF circuit can be included. The mounting substrate can have one or more conductive paths (3720 and 3740). In some cases, the one or more conductive paths are composed of a first sublayer made of very low resistance (ELR) material and a modifying material coupled to the first sublayer made of ELR material. A very low resistance interconnection (E
LRI). The RF antenna can be mounted on a mounting board together with the RF circuit. The RF antenna can be connected to the RF circuit via ELRI. In some embodiments, the RF antenna includes a first layer of ELR material and a second layer of a modifying material that couples to the first layer of ELR material.

The wireless device can be a device or a handheld transceiver. Examples include, but are not limited to, spectrum devices, mobile phones, wireless phones, Bluetooth®, Wi-Fi, Wi-Max devices, interface security devices, earphones, hearing aids, medical transponders, etc. is not. Interface security device, property security (safe garage door opener, security alarm set
Including universal remote security controller for controlling car key transmitter / etc. / reset / query, thermostat programming, general electrical control). Wireless devices can also be used for meter reading, inventory checking with special RFID tags, handheld computer
It can be a handheld transceiver for special applications, such as an interface (Bluetooth® program actuator and data transceiver).

Wireless devices that use ELRI for RF antennas include various modifications. For example, a spread spectrum device can be constructed using instructions that are larger than individual channels (eg, 100 or more individual channels). Mobile phones, wireless phones, Bluetooth® devices, and other Wi-Fi devices have large reception conditions / distances.

FIG. 38-I is a flowchart illustrating an exemplary operation 3800 for designing a radio frequency antenna using ELRI material. According to the embodiment shown in FIG. 38-I, receive operation 3810 receives RF transceiver design requirements. The design requirements can include an RF antenna mounted on the IC mounting board and an RF circuit mounted on the IC mounting board. It can also include various material costs, available material types, location restrictions / various component requirements, manufacturing methods, component sizes, Q factors, power requirements, and other design requirements. For example, in one embodiment, the design requirements can include the RF antenna being in close proximity to the RF circuit.

In generate operation 3820, a design is generated by routing a plurality of conductive paths on the IC mounting substrate to connect the RF antenna to the RF circuit. Conductive path has very low resistance (ELR
And) a very low resistance interconnect having a first layer of material and a second layer of modifying material bonded to the ELR material of the first layer. Generation operation 3820 considers the effects of very low resistance interconnections and various design requirements.

Verification operation 3830 verifies that the design requirements are met. Verification operation 3830 is performed by branching additional design iterations to generation operation 3820 if it is determined that the design is not satisfied. If verification operation 3830 determines that the design requirements are met, manufacturing operation 3840
Branch off to submit the design to manufacturing.

There are buses for power distribution on IC mounting boards such as BGA and PGA. The conductive path is generally
Coupled from an external power source to the power pad of each IC to reduce resistance. Conventional design resistance is still important and limits IC performance. Also, on the IC substrate, a plurality of voltage regions are typically created to isolate the resistance from the voltage supply nodes of various blocks in the conductive path connected to the external power source. Also, the resistance causes a distributed voltage "IR drop"
Divide into multiple voltage domains with the same voltage (1 noise that affects other blocks
Circuit design mitigation remedy including repetitive triggering). Furthermore, as resistance increases, noise does not attenuate, so to mitigate it is to isolate the wiring until it is conductively connected to an external source.

According to various embodiments, ELRI can be used for power distribution. ELRI routing creates multiple voltage domains and ground buses on the board at the “virtual external power” node, creating a negligible “IR drop”, plus power consumption (current passing through the resistance of the board wiring) Reduced). Mounting IC, eliminating "IR drop" on the line
Allows connection to the above power and ground nodes and can be coupled to virtual nodes on the board. In some cases, the number of pads can be reduced.

FIG. 39-I is an exemplary layout diagram showing a power distribution 3900 using ELRI on a substrate. ELR
Distribution provides multiple voltage domains and ground connections with voltage differences approaching zero at various points on the line, and each IC power pad couples to a “virtual external power source” for each given voltage.

In some embodiments, ELRI materials can be used to implement voltage sources (including multiple voltage domains) and conductive paths for ground connections that are routed like buses throughout the layout. . These paths form virtual nodes as the distributed voltage change approaches zero. In addition, all high frequency noise spikes move to all decoupling capacitances that are instantaneously attenuated or decoupled. According to various embodiments, the conductive path can be an IC mounting substrate such as a BGA or PGA substrate for a single IC, a SiP or MCM substrate, a thin film passive component substrate, a system that includes one or more components on the substrate, or Can be placed on a SiP substrate.

Some embodiments of the present invention provide a package 3910 that includes a substrate, a power bus 3920, and one or more virtual node ICs coupled to a pad 3930. The substrate can be a BGA substrate, PGA substrate, SiP substrate, MCM substrate, thin film passive component substrate. The power bus 3920 has a low resistance that results in negligible IR drops for power distribution mounted on the board1
One or more conductive paths may be included. The one or more conductive paths include a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the first layer of ELR material. One or more virtual nodes formed by ground connections that route around the substrate include a second ELR material, each ground connection coupled to a second ELR material, and a second modifying material. It is characterized by including.

In some embodiments, the one or more conductive paths can be arranged to form a plurality of voltage domains. The IC package 3910 can also include one or more virtual external power supply nodes generated from multiple voltage domains and ground connections. The IC package has a very low resistance interconnect (ELRI) 3950 and one or more ELRIs within the ELRI
An integrated circuit connected to the virtual external power supply node via The integrated circuit, in some embodiments, has a low voltage circuit with an operating voltage of about 0.25 volts or less. In some embodiments, the IC package 3910 can have multiple layers and have a multilayer power distribution within the multiple layers, indicated by 3960. In some embodiments, the IC package 3910 can also be a wire bond
3940 and one or more integrated circuits connected to the virtual external power supply node via one or more wirebonds 3940 in the wirebond.

Various embodiments of the present invention include an IC package 3910 having a circuit including a voltage supply, and one or more integrated circuits and a power supply voltage supply distribution for supplying power to the one or more integrated circuits from the voltage supply. Including. The IC package 3910 can include a substrate, a power bus 3920, and one or more virtual nodes. According to various embodiments, the substrate is a BGA substrate, PGA substrate, SiP substrate, MCM substrate, thin film passive component substrate, and the like. The power bus 3920 may have one or more conductive paths with low resistance for power distribution mounted on the board and may form multiple voltage domains with virtual external power supply nodes. . The low resistance of the conductive path results in negligible IR drop. In some embodiments, an IC package
3910 includes a plurality of layers 3960 and enables multi-layer power distribution within the plurality of layers 3960.

The one or more conductive paths can include a first layer of very low resistance (ELR) material and a second layer of modifying material that couples to the first layer of ELR material. One or more virtual nodes can be formed by ground connections routed around the substrate. Each ground connection can include a second ELR material and a second altering material coupled to the second ELR material.

In some embodiments, the circuit includes an ELRI that couples one or more integrated circuits to the virtual external power supply node via the ELRI. In other cases, the circuit may include a wire bond 3940 that couples one or more integrated circuits to the virtual external power supply node via wire bond 3940.

One skilled in the art understands to provide new packaging methods and materials that use ELRI to distribute power on the board to significantly reduce the redesign noise and power usage of existing products that use ICs Is done. The use of ELRI also improves integrated circuit analog circuit design because power margin is provided to the IC pad under tight and reliable control. The use of ELRI will also enable the creation of new products that were not feasible with the prior art. For example, an analog circuit on an IC with a digital circuit that does not work together in current technology because the voltage margin cannot be delivered to the IC pad can be implemented within the paradigm of the present invention. Another example includes a novel circuit and circuit architecture that can be realized with low power consumption. In other cases, ICs can use power deprived from the surrounding environment by utilizing ELRI for RF antennas on a mounting board with connections to the IC. Other examples include very low voltage circuits (within a 0.25V operating range) that require a very low voltage drop package. Another example includes a reconfigurable IC having MEMS switches that can be controlled by sensors and / or logic elements implemented in hardware and / or software.

In addition to providing a conductive path for voltage supply, ELRI materials can be used for IC mounting boards (or SiP
Can be used to route signals on the board). The use of ELRI can improve interconnect quality (over the prior art) by providing a near zero resistance signal path. In some embodiments, the conductive path is an icon on the IC pad substrate,
Or it can be routed to a pair of orthogonal layers to connect to other components in the package. In many cases, the use of ELRI materials for signal routing will reduce design time by repeatedly eliminating the mitigation design relief required for timing issues caused by prior art resistors. . The use of ELRI material is also
It may allow margin for ICs and other components on the board, otherwise it may be able to meet design requirements using prior art.

Various embodiments of the present invention include an IC package with a substrate having a set of components (eg, substrate pins, low voltage IC, etc.) and the necessary conductive paths. According to various embodiments, the substrate can be a BGA substrate, a PGA substrate, a substrate SiP, an MCM substrate, a thin film passive element substrate, or the like. An IC package consists of a pair or pair of orthogonal layers separated by an insulator with a specific connection via, each one or more conductive paths designed to connect all the continuous conductive paths You may have multiple layers that allow routing.

The one or more conductive paths can include very low resistance to provide interconnection between components and interconnect to route signals on the substrate (ie, resistance near zero). According to some embodiments, the very low resistance interconnect includes a first layer of very low resistance (ELR) material and a second layer of modifying material that is bonded to the first layer of ELR material. including.

Some examples include a voltage source, one or more integrated circuits (eg, having reduced power output drivers), and a circuit having an IC package. An IC package can have components (eg, IC pads, substrate pins, etc.) interconnected by signal routing paths that transfer signals between a voltage source and one or more integrated circuits. The IC package can include a substrate and a signal bus. The signal bus can have one or more conductive paths for signal routing on the substrate. In some embodiments, the one or more conductive paths include a first layer of very low resistance material (ELR material);
A very low resistance (eg, close to zero) interconnect having a second layer of modifying material coupled to a first layer of ELR material. In some embodiments, the substrate is R made of ELR material.
An RF antenna can be included that includes a first layer of F antenna and a second RF antenna made of a material to be modified, coupled to an ELR material of the first layer made of an RF antenna.

As understood by those skilled in the art, traditional interconnects that include multiple layers on the board to route signals and reduce noise between lines result in distributed voltage "IR drop", mitigating circuit design relief Trigger repeatedly. As the resistance spreads, the noise is not attenuated. To mitigate it, the wiring must be separated until it is conductively connected to an external source. Various embodiments of ELRI routing reduce the wasted power of the IC's signal output driver and reduce the signal voltage “IR drop” to a negligible level, in addition to passing current through the resistance of the board wiring. Reduce power consumption caused by flowing.

Various embodiments utilize ELRI to route signals on an IC mounting board. Using ELRI for routing signals results in new packaging methods and materials that significantly reduce the redesign noise and power consumption of existing products that use ICs. In addition, using ELRI to route signals results in signal margins under tight and reliable control.
Improve analog circuit design on IC for delivery to IC pad. The use of ELRI for signal routing will also enable the creation of new products that were not possible with the prior art. Examples include, but are not limited to, analog circuits on ICs having digital circuits that cannot be delivered together in the prior art because they cannot be distributed to voltage margin IC pads.
New circuits and circuit architectures can be realized with low current, low power consumption, and tight margins. ICs can use power deprived from the surrounding environment by using ELRI for RF antennas on a mounting board that has interconnections to the IC. Other examples include very low voltage circuits (within a 0.25V operating range) that require a very low voltage drop package.

FIG. 40-I is a flowchart 4000 illustrating example operations for manufacturing a signal bus using an RF antenna, a power distribution system, and / or ERLI on a board. ELRI is the type of material,
It can be manufactured based on the use of ELRI, the size of components using ELRI, and the operating requirements of devices and machines using ELRI.

In the embodiment shown in FIG. 40-I, the first deposition operation 4110 has a very low resistance (ELR) on the substrate.
Deposit a first layer of material. According to various embodiments, the first layer can include a suitable material such as YBCO or BSCCO. A second layer of modifying material is deposited during the second deposition operation 4020 on the first layer of ELR material to create the ELR interconnect. The second layer can include any suitable material such as chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, silver, selenium. The material used as the first or base layer of ELRI and / or the material used as the ELRI modifying layer can be selected based on various considerations, desired operating characteristics and / or manufacturing characteristics . Examples include cost, performance goals, available equipment, available materials, and / or other considerations and characteristics. In processing operation 4030, E to form a signal bus having one or more conductive paths that can route signals on the RF antenna, power distribution system, and / or substrate.
Handles LR interconnects.

In some examples, conductive paths formed from modified ELR materials can be used for integrated circuit packaging. For example, FIGS. 41A-l are block diagrams illustrating integrated circuit packages with in-package connections formed from modified ELR materials. Integrated circuit package 4402 includes conductive paths 4408 of a modified ELR material that are electrically coupled to chips 4404, 4406 and chips 4406, 4404. Conventional conductive materials such as copper and aluminum are typically used for chip-to-chip connections in integrated circuit packages. However, by using conductive paths formed from modified ELR materials, communication between chips is faster and more efficient.

Another example of a modified ELR material used in integrated circuit packaging is shown in FIGS. 41B-I. The integrated circuit package 4452 of FIGS. 41B-I includes a chip 4454, pins 4456 that connect the chip to outer components, and modified ELR nanowires 4458 for electrically coupling the chip 4454 and the pin 445. In some examples, the pin 4456 can also be formed from a modified ELR material. The above described benefits realized from using modified ELR materials for conductive paths can be used to more quickly and efficiently send signals to systems where packaged integrated circuits are components It is.

In addition to the systems, devices, and / or applications described herein, one of ordinary skill in the art may utilize ELRIs described herein for other system, device, and material applications that include conductive paths. You will understand that.

In the drawings, the size of various illustrated elements or components, as well as the lateral size and thickness of the various layers, are not necessarily drawn to scale, and these various elements are for ease of viewing. In addition, it is enlarged or reduced as appropriate. Also, if a detailed description of the present invention is not required, component details such as the exact geometry, the location of the components, and the exact connections between components are abstracted in the figure and excluded in detail. Yes. Where such details are not necessary for an understanding of the present invention, the representative geometric shapes, wiring, and configurations shown are intended to be exemplary of general design and operating principles.

In one example, an integrated circuit, component, and / or device that includes a modified ELR material can be described as follows.

An integrated circuit comprising: an input / output pad; an electrostatic discharge protection circuit; a conductive path connecting the input / output pad to the electrostatic discharge protection circuit; and a ground coupled to the electrostatic discharge protection circuit And the conductive path and the grounding network are first made of ELR material.
An integrated circuit formed of a modified very low resistance (ELR) material having a layer and a second layer of a modifying material bonded to a first layer of the ELR material.

An integrated circuit comprising: a dielectric substrate; and a conductive path disposed on the dielectric substrate of the integrated circuit, wherein the conductive path is formed of a first layer made of an ELR material and the ELR material. Formed of a modified very low resistance (ELR) material having a second layer of modifying material coupled to the first layer, wherein at least a portion of the conductive path is a laser modified portion An integrated circuit, wherein the portion modified by the laser has a higher resistance than the rest of the conductive path.

An integrated circuit comprising: a dielectric substrate; and a conductive path disposed on the dielectric substrate of the integrated circuit, wherein the conductive path is a first layer made of an ELR material and a first layer made of the ELR material. Formed of a modified very low resistance (ELR) material having a second layer of modifying material bonded to one layer, wherein portions of the conductive path were modified with at least one laser Including parts,
The integrated circuit characterized in that the at least one laser modified portion has a higher resistance than the rest of the conductive path.

An integrated circuit, wherein the integrated circuit has a conductive path disposed on a dielectric layer of the integrated circuit, and the conductive path includes a first layer made of an ELR material and a first layer made of the ELR material. Formed of a modified very low resistance (ELR) material having a second layer of modifying material coupled to the layer, the integrated circuit further comprising a magnetic field that affects a portion of the conductive path. An integrated circuit comprising a magnetic field source for generating, wherein the modified ELR material of the affected portion of the conductive path has a higher resistance than the unaffected portion.

An integrated circuit, wherein the integrated circuit has a conductive path disposed on a dielectric layer of the integrated circuit, and the conductive path includes a first layer made of an ELR material and a first layer made of the ELR material. Formed of a modified very low resistance (ELR) material having a second layer of modifying material coupled to the layer, the integrated circuit further comprising a magnetic field that affects a portion of the conductive path. A magnetic random access memory (MRAM) cell for generating, wherein the modified ELR material of the affected portion of the conductive path is higher in resistance than the unaffected portion. Integrated circuit.

An integrated circuit, comprising: a dielectric substrate; and a conductive path on the dielectric substrate of the integrated circuit, wherein the conductive path includes a first layer made of an ELR material and a first layer made of the ELR material. A current limiting element formed from a modified very low resistance (ELR) material having a second layer of coupled modifying material, the critical current being less than the remaining critical current of the conductive path For definition purposes, an integrated circuit wherein at least a portion of the conductive path has a different dimension than the rest of the conductive path.

An integrated circuit (IC), wherein the integrated circuit (IC) has a plurality of conductive paths, and at least one of the plurality of conductive paths is a first made of a very low resistance material (ELR). Layer and said first
The integrated circuit (IC) further comprises a micro-electromechanical system (MEMS) and one of the two layers of a modifying material coupled to the ELR material of the layer. An integrated circuit comprising a set of circuits connected to the MEMS through the conductive path.

An integrated circuit (IC), the integrated circuit (IC) having one or more conductive paths, the one or more conductive paths being made of a very low resistance material (ELR) Consisting of a very low resistance interconnect having a first layer and a second layer of modifying material bonded to the ELR material of the first layer, the integrated circuit (IC) further comprising one or A further network of microelectromechanical systems (MEMS) and the MEM via the one or more conductive paths
An integrated circuit comprising a set of circuits connected to the network of S.

An integrated circuit (IC), the integrated circuit (IC) having one or more conductive paths, the one or more conductive paths being made of a very low resistance material (ELR) The integrated circuit (IC) further comprises a microelectromechanical circuit comprising a very low resistance interconnect having a first layer and a second layer of modifying material bonded to the ELR material of the first layer. An integrated circuit comprising a system (MEMS) and a passive component connected to the MEMS via the one or more conductive paths.

An integrated circuit (IC) including a package, the integrated circuit (IC) having an IC mounting substrate having one or more conductive paths, wherein the one or more conductive paths are very The integrated circuit (IC) comprising a very low resistance interconnect having a first layer of low resistance material (ELR) and a second layer of modifying material coupled to the ELR material of the first layer. ) Further includes a microelectromechanical system (MEMS) and the M via the one or more conductive paths.
An integrated circuit comprising a network of components connected to an EMS.

A microelectromechanical system (MEMS) comprising one or more components, each component comprising a first layer of very low resistance material (ELR) and the first layer of the first layer
A microelectromechanical system (MEMS), characterized in that it has a second layer of modifying material bonded to ELR material.

A microelectromechanical system (MEMS), an input port for receiving an input signal from outside the MEMS, a component configured to receive the input signal and generate a response, and the input signal One or more conductive paths connecting the component to the input port so that the one or more conductive paths are very low resistance material ( A small electromechanical system (MEMS) comprising: a first layer made of ELR) and a second layer made of a modifying material bonded to the ELR material of the first layer.

A microelectromechanical system (MEMS), wherein an output port, a component configured to generate a signal, and the generated signal are transferred to the output port;
One or more conductive paths connecting the components to the output port, the one or more conductive paths comprising a first layer of very low resistance material (ELR); A microelectromechanical system (MEMS) comprising a second layer of a modifying material bonded to the ELR material of a first layer.

An integrated circuit (IC) comprising an IC mounting substrate and an RF component on the IC mounting substrate, wherein the radio frequency (RF) component is a first made of a very low resistance material (ELR)
Through one or more conductive paths including a modified very low resistance interconnect (ELRI) having a layer and a second layer of modifying material coupled to the ELR material of the first layer An integrated circuit comprising interconnected sub-circuits.

An integrated circuit (IC) having a radio frequency (RF) antenna having one or more conductive paths, the one or more conductive paths being made of a very low resistance material (ELR) First
An integrated circuit (IC) comprising: one layer; and a second layer of a modifying material bonded to the ELR material of the first layer.

A monolithic microwave integrated circuit (MMIC) made from a single silicon, comprising a first layer of very low resistance (ELR) material and a modifying material coupled to the ELR material of the first layer A very low resistance interconnect (ELRIs) having a second layer, a radio frequency (RF) including one or more passive elements, an RF amplifier connected to an RF filter by the ELRIs, and A monolithic microwave integrated circuit (MMIC) comprising: an RF antenna connected to the RF amplifier by ELRIs.

A wireless device comprising a monolithic microwave integrated circuit (MMIC) having a transceiver and a receiver circuit coupled to a radio frequency (RF) power source, the RF transceiver and receiver circuit comprising:
Very low resistance interconnects (ELRIs) having a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the ELR material of the first layer; A radio frequency (RF) filter including one or more passive elements and the RF by the ELRIs
A monolithic microwave integrated circuit (MMIC), characterized by comprising an RF antenna connected to an amplifier.

An integrated circuit (IC), wherein the integrated circuit (IC) comprises a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the ELR material of the first layer. An IC substrate having one or more conductive paths consisting of a very low resistance interconnect (ELRI) having a layer, a set of circuits mounted on the IC substrate, and the one or more A first programmable block connected to the set of circuits via a conductive path, wherein the first programmable block is a digital signal processor (DSP) mounted on the substrate
And a radio frequency (RF) transmitter coupled to the DSP, and an embedded core mounted on the IC substrate, the embedded core having one or more functions. Programmable to execute and coupled to the DSP, the integrated circuit (IC) further comprises
An integrated circuit (IC) comprising a set of programmable ELRI blocks including components made from said ELRI.

An integrated circuit comprising a substrate and a plurality of conductive paths disposed on the substrate, wherein at least one of the plurality of conductive paths is an ELR material and a modification coupled to the ELR material An integrated circuit, characterized in that it is formed with a modified very low resistance (ELR).

An integrated circuit comprising: a first component; a second component; and a plurality of conductive paths including a specific conductive path that electrically couples the first component to the second component; The conductive path has a first layer made of ELR material and a second layer made of a material to be bonded to and changed from the first layer of ELR material, so that the conductive path is formed of a very low resistance (ELR) film. An integrated circuit characterized by comprising:

A power distribution network for an integrated circuit, comprising a conductive path for electrically coupling a power source to at least one component of the integrated circuit, the power source being disposed outside or within the integrated circuit, Conductive paths are disposed on the substrate of the integrated circuit, and the conductive paths are
A first layer of ELR material and a second layer of modifying material bonded to the ELR material of the first layer.
An integrated circuit formed of a modified very low resistance (ELR) film.

  Integrated circuit clock distribution network.

A signal distribution network for an integrated circuit, comprising a plurality of conductive paths disposed on a substrate of the integrated circuit, wherein at least one of the plurality of conductive paths includes a first layer made of ELR material; And a second layer made of a modifying material bonded to the ELR material of the first layer, and formed of a modified very low resistance (ELR) film. Signal distribution network.

An integrated circuit comprising an analog circuit and a compensation circuit electrically coupled to the analog circuit by a conductive path, wherein the conductive path is formed of a first layer made of ELR material, and the first layer Above
An integrated circuit formed of a modified very low resistance (ELR) film having a second layer of modified material bonded to the ELR material.

An integrated circuit, comprising: a plurality of memory cells; and a sense amplifier electrically coupled to the memory cells of the plurality of memory cells, wherein the plurality of memory cells pass through a plurality of conductive paths. And at least one of the plurality of conductive paths coupled to a sense amplifier includes: a first layer made of ELR material; and a second layer made of a changing material coupled to the ELR material of the first layer. An integrated circuit comprising a modified very low resistance (ELR) film.

A data flow processor, comprising: a functional cell; a bus electrically coupled to the functional cell; and an instruction line electrically coupled to the functional cell, the bus and the instruction line comprising an ELR material And a modified very low resistance (ELR) film having a first layer comprising: a second layer comprising a modifying material coupled to the ELR material of the first layer. Data flow processor.

An integrated circuit (IC), the integrated circuit (IC) having an IC mounting substrate having one or more conductive paths, wherein the one or more conductive paths are a first layer made of ELR material And a second layer of modified material bonded to the ELR material of the first layer, and a modified very low interconnect (ELRI), the integrated circuit (IC) A radio frequency (RF) antenna mounted on the IC mounting board, and an RF circuit mounted on the IC mounting board,
An integrated circuit (IC), wherein an RF antenna is connected to the RF circuit through the ELRI.

An IC package, the IC package comprising a substrate and one or more conductive paths for power distribution mounted on the substrate, wherein the one or more conductive paths are made of ELR material And a second layer of modifying material coupled to the ELR material of the first layer, wherein the IC package is formed by a ground connection that routes around the substrate. Or more virtual nodes, the ground connection comprising a first ground connection made of a second ELR material and a second ELR material coupled to the second ELR material of the first ground connection layer.
And a second layer made of a material to be changed.

An improved signal routing path for use on a substrate, wherein the signal routing path includes one or more conductive paths, wherein the improvement includes each of the one or more conductive paths A signal routing path comprising: a first layer made of a very low resistance (ELR) material; and a second layer made of a modifying material coupled to the ELR material of the first layer.

A system-in-package (SIP) having a plurality of chips and a conductive path that electrically connects a first chip of the plurality of chips to a second chip of the plurality of chips. The conductive path from a modified very low resistance (ELR) having a first layer of ELR material and a second layer of modifying material coupled to the ELR material of the first layer. System-in-package (SIP), characterized by being formed.

Chapter 9-Rotating Machines Made of ELR Material Refer to Figure 1-36 and Figures 37A-J through 42-J for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Describes rotating machines such as motors, generators, energy conversion devices, and / or flywheels, including components formed of modified, apertured, and / or other new very low resistance (ELR) materials Is done. In some examples, the rotating machine is formed from a rotor that includes a winding formed from ELR material, a stator that includes a winding formed from ELR material, and / or other components formed from ELR material. Other components For example, the rotor windings are composed of a modified ELR film having a YBCO layer and a modifying layer. Modified ELR materials provide very low resistance to current at temperatures higher than those associated with current high temperature superconductivity (HTS) and improve the operating characteristics of rotating machinery at these higher temperatures Let

In some examples, the ELR material is manufactured based on the type of ELR material, the application of the ELR material, the size of the component using the ELR material, and the application requirements of the device or machine using the ELR material. Thus, during the design and manufacture of rotating machinery, the material used as the base layer of the ELR film and / or the material used as the changing layer of the modified ELR film has various considerations and desired operating characteristics. And / or based on manufacturing characteristics.

FIGS. 37A-J are schematic diagrams showing a rotating machine 3700 using an ELR material. The rotating machine 3700 includes a stator (stator) 3710, a rotor (rotor) 3720, or an armature. The stator 3710, in this example, is a permanent magnet with a south “S” pole opposite to the north “N” pole, and the rotor 3720 ELR-based winding 3
A magnetic field is generated in the gap 3712 including 730. Winding 3730 is a modified, open, and / or film having a base layer of ELR material, and a modifying layer formed on the base layer.
Or it is made of new ELR material. Various other suitable ELR materials are described in detail herein.

When the battery 3726 or other power source applies voltage (AC or DC) to the ELR base winding 3730 via the lead wire 3728, a current flows in the ELR base winding 3730. ELR-based winding 3730 has little or no current flow in winding 3730 at temperatures higher than those used in conventional HTS materials such as room temperature and ambient temperature (eg ~ 21 ° C) Does not show resistance. The current flow in the ELR-based winding 3730 generates a magnetic field within the magnetic field of the stator 3710,
Generates torque on the rotor 3720 and the rotor 3720 rotates within the gap 3712 (ie, the winding 3730 rotates in and out of the page) or otherwise the shaft 3724 or the rotor 3720
Rotate relative to the stator 3710, such as around other support structures and / or around a rotor that does not include a support structure.

In some examples, the ELR material forming winding 3730, or other component, is conventional H
At a temperature between the transition temperature of the TS material (eg ~ 80-135K) and room temperature (eg ~ 294K) or at a temperature surrounding the winding 3730 or at other temperatures lower than the associated rotating machine It can exhibit very low resistance to flow. For example, ELR materials can exhibit very low resistance to current flow at temperatures between 150K and 313K or higher.

FIGS. 37B-J are schematic diagrams showing a rotating machine 3750 having a cooling system. Similar to rotating machine 3700 shown in FIGS. 37A-J, rotating machine 3750 includes a rotor 372 having a stator 3710 and ELR-based winding 3730.
It exhibits a very low resistance to current flow at various high temperatures (eg, 150K and above), including zero. The rotating machine 3750 includes a cooling system 3760, such as a refrigerator or cryostat, used to cool the winding 3730 to the critical temperature of the modified ELR membrane type utilized in the winding 3730 of the rotating machine 3750. For example, the cooling system 3760 is a system that can cool the winding 3730 to the same temperature as the temperature of the liquid freon, to the same temperature as the ice, or to the same temperature as other temperatures described herein. May be. That is, the cooling system can be selected based on the type and structure of ELR material utilized in the winding 3730 of the rotor 3720, and the winding 3730
Winding 3730 can be cooled to a temperature lower than the ambient temperature.

In some examples, the cooling system 3760 can include or communicate with a monitoring component (not shown). The monitoring component can monitor ELR windings, rotor, stator, and / or rotating machine temperature, ELR component resistance, and other parameters. During monitoring, if the monitored parameter meets a certain threshold, the monitoring component increases and / or decreases the cooling system to the applied temperature or coolant. For example, if the monitored temperature rises (or approaches) above the critical temperature of the ELR material, the monitoring component causes the cooling system to lower the temperature of the ELR material. Of course, those skilled in the art will appreciate that other techniques can be used to monitor and / or regulate the cooling system.

37A-J and 37B-J are general methods, but rotating machines 3700 and 3750 are DC motors, AC motors, generators, alternators, converters and inverters that convert mechanical energy into electrical energy. Or other machines and devices that convert electrical energy to mechanical energy and / or convert a form of electrical energy to another form of electrical energy (eg, DC to AC). In addition, further details regarding various rotating machines that can benefit from using ELR materials are described herein.

In addition to the stand-alone winding 3720 as shown in Fig. 37A-J and Fig. 37B-J, the rotor 3720 of the rotating machine 3700 includes the type of rotating machine, the use or application of the rotating machine, the size of the rotating machine, the rotating machine Based on many factors, including the operating requirements, the type of ELR material, can be configured in various ways. FIGS. 38A-J to 38G-J are schematic views of various rotors for use in rotating machines that utilize modified, opened, and / or other new ELR materials. Will recognize that other rotors not specifically described may also utilize the ELR materials described herein.

38A-J shows a winding structure formed from ELR film 3802 and a support structure 3 that supports modified ELR film 3802.
4 is a schematic diagram showing a rotor 3800 having 804. FIG. The ELR film 3802 may be formed on the support structure 3804 by forming the ELR film 3802 into a tape, foil, or other similar component. The support structure 3804 supports the ELR film and can enhance the magnetic field strength generated by the current flowing through the ELR film 3802 (eg, other magnetic materials, ceramics, amorphous metals) Etc.).

There are various techniques for producing and manufacturing tapes and / or foils of ELR materials. In some examples, the technique includes depositing YBCO or other ELR material on a flexible metal tape coated with a buffer metal oxide to form a coated conductor. During processing, the texture can be introduced into the metal tape using a rolling assist, biaxial textured substrate (RABiTS) process or the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam assisted deposition (IBAD) process on an untextured alloy substrate. The addition of the oxide layer prevents metal diffusion from the tape into the ELR material. To produce ELR tape, chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (ALL-MBE)
), And other techniques such as other solution deposition techniques may be utilized.

FIGS. 38B-J are schematic diagrams illustrating a rotor 3810 having a winding formed as an ELR-based wire 3812 and a support layer 3814. FIG. In the illustration, the wire 3812 is formed in the support layer 3814, but in some cases, the wire may be standalone or formed around the stand support layer 3814.

In forming the ELR wiring, a plurality of ELR tapes or foils may be sandwiched together to form a large capacity line. For example, the winding can include a support structure and one or more ELR tapes or foils supported by the support structure.

In addition to ELR wires, the windings described herein can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 50 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material is 5
It can be formed into nanowires having a nanometer width and / or depth. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

Figure 38C-J shows a winding 3822 formed from ELR material such as modified ELR tape or wire
4 is a schematic diagram showing a rotor 3820 having a core or shaft 3824 such as an iron core. In some cases, the number of turns of winding 3822 is selected based on the desired torque to rotor 3820 or other factors. In some cases, the type of material used for winding 3822 and / or 3824 core is selected based on the desired torque to rotor 3820, or other factors.

FIGS. 38D-J are schematic diagrams showing a rotor 3830 having a material such as an ELR tape or wire modified, such as ELR, and a winding formed with circular cores 3834, 3832 as iron cores. In some cases, the number of turns of winding 3822 is selected based on the desired torque on rotor 3830, or other factors. In some cases, the type of material used for winding 3832 and / or 3834 core is selected based on the desired torque on rotor 3830, or other factors.

Figures 38E-J show a modified rod 3 formed from ELR material such as modified ELR tape or nanowires.
4 is a schematic diagram showing a rotor 3840 having 842 and a support structure 3844. FIG. The rotor 3840 can be similar to known squirrel-cage rotors or other similar rotors.

FIGS. 38F-J are schematic diagrams illustrating a rotor 3850 having a ring 3852 and one or more support rings 385 formed of ELR material. In some cases, ELR ring 3852 is a rotor 3850
May be one continuous ring around the axis of rotation. In some cases, the ELR ring 3852 may be two or more separate rings around the rotational axis of the rotor 3850.

FIGS. 38G-J are schematic diagrams showing a rotor 3860 having a plurality of strips or rods 3862 and a support structure 3864 formed from ELR material, such as modified ELR tape or nanowires.
In some cases, the ELR strip or rod 3862 is formed on a support structure 3864 that extends the length of the rotor 3860. In some cases, support structure 3864 supports the end of a strip or rod 3862 and rotor 3860 is similar in structure to a squirrel-cage rotor.

As noted above, those skilled in the art will appreciate that a rotor intended for use with the ELR materials described herein can take forms other than those shown in FIGS. 38A-J through 38G-J. I will. That is, the ELR material can be manufactured in various ways to achieve the desired morphology. ELR materials can move or carry current from one point to another to generate wires, tapes, rods, strips, nanowires, films, foils, other shapes or structures, and / or magnetic fields It may be formed in other shapes. Although some suitable geometric shapes for windings, rotors, stators, and / or other components are shown and described herein, many other shapes are possible. Other shapes include different patterns, different configurations or different layouts for length and / or width, in addition to material thickness, use of different layers, and other three-dimensional structural differences.

In some examples, the type of ELR material used in windings and / or other components or devices can be determined by the type of application utilizing the ELR material. For example, some applications may utilize ELR material with a BSCCO ELR layer, while other applications may use a YBCO ELR layer. That is, the ELR materials described herein are formed from a specific material (eg, YBCO or BSCCO) based on the type of machine or component that uses the ELR material, and a specific structure (eg, tape or wire) Can be formed.

In addition to the rotor, other components of the rotating machine can utilize the ELR materials described herein. For example, a stator having conductive windings, leads between components (eg, battery leads, etc.), and other components can use ELR materials. Various rotating equipment and components that can utilize the ELR materials described herein are described below.

FIGS. 37A-J and 37B-J show a rotating machine with a rotor having a modified ELR film winding that can conduct current with very low resistance to generate a magnetic field. However, in some examples, the rotating machine can include a stator having a modified ELR membrane winding that conducts current to generate a magnetic field in a gap that houses the rotor. FIG. 39-J is a schematic diagram of a rotating machine 3900 with a stator having ELR windings. The rotating machine 3900 includes a support structure 3912,
A stator having a winding 3914 formed from a modified, open, and / or other new ELR material, such as a modified ELR wire or tape. Rotor 3920
Is located in the gap 3915 of the stator 3910. The rotor 3920 includes one or more ELR components such as a rod 3922 held by a support structure 3924.

As described herein, ELR winding 3914 and / or ELR rod 3922 can be formed in a variety of ways using a variety of different materials. For example, the winding can be formed from a modified ELR tape or wire.

Thus, the ELR materials described herein can be used as various different components of a rotating machine or in various different components of a rotating machine. For example, as a rotor winding or in a rotor winding, as a stator or in a stator,
It can be used as a rod or rotor or as a lead or other connecting element between components in a rod or rotor, as a tape or in a tape, as a ring or in a ring. Various rotating machines, including motors, generators, alternators, energy converters (AC to DC, DC to DC, DC to AC) flywheels can utilize such membranes. Some examples are described below.

FIG. 40-J is a schematic diagram of a brushed DC motor 4000 using ELR material. The brushed DC motor 4000 has a stator 4010 formed of permanent magnets, a rotor 4020 formed of a core 4022 (eg, iron, ceramic, amorphous metal, air), ELR base winding 4024, rotation within the stator 4010 An axle 4021 or other support that facilitates rotation of the child 4020, a brush 4026 that supplies current from the current source 4030 to the winding 4024, and a commutator 4028 that rectifies the winding 4024 of the rotor 4020.

Various types of brushed DC motors or stepping motors can utilize modified ELR films as various components or utilize modified ELR films within various components. Brushed DC motors include permanent magnet brushed DC (PMDC) motors, shunt wound brushed DC (SHWDC) motors, direct wound brushed DC (SWDC) motors, and multiple windings (C
WDC) including motor.

FIG. 41-J is a schematic diagram of a brushless DC motor 4100 using ELR material. The brushless DC motor 4100 includes a stator 4110 formed from a support structure 4114, a modified ELR film winding 4112, a Hall effect sensor 4116, a Hall effect commutator 4118, and a rotor formed from a permanent magnet that rotates within the stator 4110. Includes 4120. Various types of brushless DC motors or electronic commutation motors can utilize ELR material as various components or within various components.

FIG. 42-J is a schematic diagram of the ELR material used in the AC motor 4200. AC induction motor 4200
Includes a stator 4210 having an ELR winding 4214 wound around a magnetic pole 4212 of a stator 4210, a conductor element 4422 (which may be ELR material) and a shaft 422 that rotates within the stator 4210.
And a rotor 4220 having four or other support structures 4214.

Different types of AC motors ELR as different components or within components
Materials can be used. AC motors include single-phase induction motors (eg, split-phase induction motors, capacitor start induction motors, permanent split capacitor induction motors, capacitor start capacitor run induction motors, shadow pole AC induction motors) and three-phase induction motors (risk cage motors). , Wire-wound motors, etc.).

Of course, those skilled in the art will appreciate that other rotating machines use the ELR materials described herein. Other rotating machines include universal motors, printed armature or pancake motors, servo motors, electrostatic motors, torque motors, stepping motors, hub motors, fan motors, generators, alternators, air core motors, flywheels, Includes magnetic clutches, power machines, and / or other rotating machines.

The various rotating machines described herein can exhibit improved or enhanced operating characteristics by utilizing modified, apertured, and / or other new ELR materials. For example, rotating machinery can exhibit less resistance loss from the resistance of various conductive elements such as windings, leads, capacitive elements. This means that devices using rotating machines with improved operating characteristics will in turn provide similar improvements and benefits.
Examples of rotating machines that use modified ELR materials include fans, turbines, drills, pumps, electric drive trains, electric car wheels, railway locomotive traction, electric clutches, belt conveyors, robots, automobiles, home appliances Information storage systems such as engines, manufacturing devices, hard disk drives, exercise equipment, prosthetic devices, exoskeletons, toys, roller skates / blades, lawn and garden equipment, shoes, furniture, etc.

In some embodiments, a rotating machine that includes a modified ELR material can be described as follows.

A rotating machine comprising a stator assembly and a rotor assembly arranged to rotate within the stator assembly, the rotor assembly comprising a support structure and a winding formed of a modified ELR material A rotating machine characterized by comprising:

A rotor for use in a rotating machine, comprising: a support structure; and a winding formed from a modified ELR material coupled to the support structure.

A rotating machine comprising a stator and a rotor, wherein the rotor is formed of a material that exhibits a very low resistance to electric current at temperatures exceeding 150 Kelvin at standard pressure .

A rotor assembly for use in a rotating machine comprising a core structure formed from a magnetic material and a modified ELR film configured to carry electrical current, the modified ELR
A rotor assembly, wherein the membrane comprises a first layer made of ELR material and a second layer made of a modifying material bonded to the ELR material of the first layer.

A stator assembly for use in a rotating machine, comprising a support structure and a modified ELR film configured to carry current, wherein the modified ELR film comprises a first layer of ELR material. A stator assembly comprising: one layer; and a second layer of a modifying material bonded to the ELR material of the first layer.

A winding configured to carry an electric current to generate a magnetic field in a rotating machine, the first layer comprising an ELR material and a first material comprising a modifying material coupled to the ELR material of the first layer. A winding comprising two layers.

A rotating machine comprising a stator assembly including a support structure, a winding formed from a modified ELR material, and a rotor arranged to rotate within the stator assembly. .

A stator for use in a rotating machine, comprising a support structure and a winding formed from a modified ELR material coupled to the winding support structure. ,

A rotating machine comprising a rotor and a stator, wherein the stator is formed of a material that exhibits a very low resistance to current at temperatures exceeding 150 Kelvin at standard pressure .

A rotating machine comprising a stator assembly and a rotor assembly arranged to rotate within the stator assembly, the rotor assembly comprising a support structure and a winding formed from a modified ELR material And a cooling system that maintains a winding formed from the modified ELR material at a temperature between 135K and 273K.

A rotating machine comprising a stator assembly including a support structure and windings formed from a modified ELR material, a rotor assembly disposed to rotate within the stator assembly, and a modified ELR material. And a cooling system for maintaining the winding formed from a film at a temperature lower than a temperature surrounding the winding.

A rotating machine, a stator, a rotor formed of a material that exhibits a very low resistance to current at temperatures between 150K and 313K, and an emergency for current at or below the critical temperature of the material And a cooling component that maintains the material exhibiting a low resistance to the rotating machine.

A stator assembly including a gap configured to receive a rotor assembly, a rotor assembly configured to rotate within the gap of the stator assembly, and a core structure formed of a magnetic material A modified ELR material winding configured to carry current, the modified ELR material comprising: a first layer of ELR material; and a first layer of the first layer. A DC motor comprising: a second layer made of a material to be changed, which is bonded to the ELR material.

An AC induction motor, comprising a rotor assembly made of a magnetic material and configured to rotate within a gap of a stator assembly, and having a support structure and configured to provide a gap for receiving the rotor assembly A modified stator assembly and a modified ELR material configured to carry electrical current, the modified ELR material comprising a first layer of ELR material, and the ELR material of the first layer An AC induction motor, characterized in that the AC induction motor is formed from a second layer made of a material to be modified, which is coupled to the material.

A brushed DC motor, characterized by having a stator formed of permanent magnets, a rotor formed of iron core, and a modified ELR winding that carries current at near zero resistance below ambient temperature DC motor with brush.

A stator assembly including a gap configured to receive a rotor assembly; and a rotor assembly configured to rotate within the gap of the stator assembly, the rotor assembly comprising: A modified ELR material winding configured to carry current, the modified ELR material comprising a first layer of ELR material and the first layer
A DC motor comprising: a second layer made of a material to be modified that is bonded to the ELR material of the layer.

An AC induction motor, comprising a rotor assembly made of a magnetic material and configured to rotate within a gap of a stator assembly, and having a support structure and configured to provide a gap for receiving the rotor assembly A modified stator assembly and a modified ELR material configured to carry current, wherein the modified ELR material comprises a first layer of ELR material, and the ELR of the first layer. An AC induction motor, characterized in that it is formed of a second layer made of a material to be changed and bonded to a material.

A brushed DC motor comprising a stator formed of a permanent magnet, a rotor formed of a non-magnetic core, and a modified ELR winding, wherein the modified ELR winding is A brushed DC motor characterized by flowing current with almost zero resistance below temperature.

A vehicle including a DC motor, wherein the DC motor includes a stator assembly including a gap configured to receive a rotor assembly, and the rotor assembly configured to rotate within the gap of the stator assembly. The rotor assembly has a core structure formed of a magnetic material and a winding of the modified ELR material configured to carry current, the modified ELR material A first layer of ELR material and the ELR of the first layer
And a second layer made of the material to be changed, which is coupled to the material.

An electric vehicle comprising an inductor motor, wherein the inductor motor is formed of a magnetic material and configured to rotate within a gap of a stator assembly, and to rotate within a gap that houses the rotor assembly. A stator assembly, wherein the stator assembly includes a support structure and a modified ELR material configured to carry electrical current, the modified ELR material comprising an ELR material An electric vehicle comprising: a first layer comprising: a first layer comprising: a second layer comprising a modifying material coupled to the ELR material of the first layer.

An automobile, a support structure, a plurality of rotating machines, each rotating machine including at least one modified ELR component, coupled to the plurality of rotating machines, and the at least
Said at least a temperature lower than the ambient temperature surrounding one modified ELR component
A cooling system configured to maintain the temperature of one modified ELR component;
And a monitoring component coupled to the cooling system and configured to monitor the status of the at least one modified ELR component.

An appliance including a DC motor, the DC motor including a gap configured to receive a rotor assembly, and a rotor assembly configured to rotate within the gap of the stator assembly Wherein the rotor assembly has a core structure formed of a magnetic material and a winding of a modified ELR material configured to carry current, the modified ELR material comprising: An electrical appliance comprising: a first layer made of an ELR material; and a second layer made of a material to be modified bonded to the ELR material of the first layer.

An electrical device including an induction motor, wherein the induction motor provides a rotor assembly formed from a magnetic material and configured to rotate within a gap in a stator assembly, and a gap that houses the rotor assembly A stator assembly configured to, wherein the stator assembly is modified to carry a support structure and current
The modified ELR material includes: a first layer made of an ELR material; and a first layer of the first layer.
And a second layer of modifying material coupled to the ELR material.

A system including an ELR-based subassembly, wherein the ELR-based subassembly is configured to maintain a material in an ELR state with a component formed from at least partially modified ELR material and the modified ELR And a coolant interface configured to contain or discharge a coolant used in the system.

A rotating machine, wherein the rotating machine includes an electrical subassembly, the electrical subassembly includes a modified or opened ELR material and is configured to receive electrical energy, the rotating machine comprising: A rotating machine comprising: a rotating subassembly, wherein the rotating subassembly is configured to provide rotational energy based on the received electrical energy.

Chapter 10 Bearings made of ELR material Refer to Figures 1-36 and Figures 37A-K through 41-K for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

A bearing assembly, such as a bearing for use in a rotating machine, including components formed of modified, open, and / or other new very low resistance (ELR) materials is described. In some examples, the bearing assembly includes a bearing having windings and / or coils formed from ELR material or other components formed from ELR material. For example, the bearing winding is composed of a modified ELR film having a YBCO layer and a modifying layer. ELR materials provide very low resistance to current at temperatures higher than the normal temperatures associated with high temperature superconductivity (HTS) and improve the operating characteristics of the bearing assembly at these higher temperatures.

As described herein, various ELR elements, such as modified ELR elements, may be used in a bearing assembly such as a bearing assembly that utilizes a floating rotary bearing. FIGS. 37A-K are block diagrams of a suitable protection circuit 3700 including a bearing assembly using ELR material. Includes elements that control, modify and / or maintain current in ELR coils and windings of bearing assembly 3710. Protection circuit 3700, switch 3730, power supply 3735, controller
Includes 3750, and optional cooling system 3720. Power supply 3735 bearing assembly 3710
Bearing assembly 3 via switch 3730 to cause current in the ELR coil or winding
Supply power to the 710. Controller 3750 controls the application of power supply 3735 of bearing assembly 3710.

In some examples, the ELR coil or winding, or other ELR component, in the bearing assembly 3710 is a conventional HTS material transition temperature (eg, ~ 80-135K) and room or ambient temperature (
For example, very low resistance to current flow can be provided at temperatures between ˜294K) or other temperatures below the ambient temperature of the coil or winding. Thus, the circuit uses a cooling system 3720 such as a refrigerator or cryostat used to cool various components of the bearing assembly 3710 to the critical temperature of the modified ELR material type utilized by the bearing assembly 3710. Can be included. For example, the cooling system 3720 may cause the bearing assembly 3710 to reach the same temperature as the boiling point of liquid chlorofluorocarbon, to the same temperature as the melting point of water,
Alternatively, the system may be capable of cooling to the same temperature as other temperatures described herein. That is, the cooling system 3720 can be selected based on the type and / or structure of the modified ELR material utilized in the bearing assembly 3710, the environment in which the bearing assembly is located, and the like.

Various systems, devices, and other apparatus may use the bearing assembly 3700 or other bearing assemblies and / or components described herein. Figure 37B-K
FIG. 7 is a block diagram of a system 3760 that uses a bearing assembly, such as bearing assembly 3700. The system 3760 can include a bearing assembly 3765, such as a bearing assembly including an electromagnetic stator having ELR components and a rotor rotor. The system 3760 may also include a power amplifier 3770 that includes various ELR-based components that amplify the signal received from the signal conditioning component 3770, such as a proportional integral derivative (PID) controller, to control the operation of the bearing assembly. it can. Further, the system 3760 can include various other circuit elements 3775 that can receive the reference signal 3780 and the sensor signal 3785 to provide a control feedback loop for the bearing assembly 3765.

System 3760 as various devices such as motors and other rotating machines, toys, gyroscopes, energy storage devices, energy conversion devices, information storage devices, home appliances, automobiles, devices and devices that can use rotating bearings Can act or
It can be incorporated into part of the device.

The various types and configurations of the levitation bearing assembly are described below. FIG. 38-K is a schematic illustration of a levitation bearing assembly 3800, such as a bearing assembly for use in a rotating machine. The bearing assembly 3800 includes an ELR bearing 3810, a magnetic rotor 3820, and a stator 3830. During operation, the bearing 3810 provides and / or generates a magnetic field that causes the rotor to float within the space or gap 3840 between the bearing 3810 and the stator 3830.

ELR bearing 3810 is a modified and / or open ELR material that exhibits very low resistance to current at temperatures between 150K and 313K as described herein, or higher A part or all of the ELR material can be used. In some examples, the bearing 3810 is a disk of disc-like ELR material (as shown) that has a slight curvature towards the center to help maintain the floating rotor 3820 over the bearing 3810. Can be formed. In some examples, the bearing 3810 may be an ELR element coil or winding, or other configuration that can carry current with very low resistance and generate a magnetic field.

The rotor 3820 includes a permanent magnet that can float and rotate between the bearing 3810 and the stator 3830. For example, the rotor 3820 may be a disk, donut, or other circular shaped object. Rotor 3820 may be formed of a plurality of permanent magnets, or may be formed of an electromagnet. The magnets of the rotor 3820 may be magnetized with various pole configurations to meet the needs of machines utilizing the bearing assembly 3800. In some examples, the magnetization may be isotropic, anisotropic, or may have a plurality of magnetic pole patterns. For example, the rotor 3820 includes a first magnetic element coupled to the stator 3830, a second magnetic element coupled to the bearing 3810, and a buffer magnet that magnetically separates the first magnetic element from the second magnetic element. And may contain.

Stator 3830 can include an armature winding connected to a power source to generate a magnetic field that drives rotor 3820. The stator can include positioning and / or detection components such as Hall effect sensing components, electro-optic switch components, radio frequency sensing components. The stator 3830 utilizes these components to determine information regarding the operation of the rotor 3820, thereby adjusting the magnetic field generated in the armature winding.

As described herein, the bearing assembly 3800 may utilize other bearing configurations. FIGS. 39A-K are schematic views of a bearing 3900 that includes a substrate 3910 and a coil or winding 3920 formed from an ELR material, such as a modified and / or open ELR material. The bearing 3900 is a coil that creates a magnetic field that can levitate a magnetic rotor such as the rotor 3820
A very low resistance current is passed through the 3820.

Figures 39B-K show a modified ELR loop 3950 that allows current to flow to generate a magnetic field.
FIG. 4 is a schematic view of a bearing 3930 comprising two or more substrates 3940 arranged together to form a (or loop). For example, each of the four triangular substrates 3942 that include a strip of ELR material 3952 causes the strip of ELR material 3952 to circulate current with very low resistance,
A loop 3950 that generates a magnetic field that can levitate a magnetic rotor such as a rotor 3820
To be adjacent to each other.

In addition to the disc bearing assembly shown in FIG. 38-K, other bearing assemblies are described herein.
ELR material can be used. 40A-K to 40C-K are schematic views of various bearing assembly configurations.

In FIGS. 40A-K, the bearing assembly 4000 includes a rotating shaft 4020 having a coil 4025 spaced within the gap of the bearing 4010. In some cases, as described herein, the coil 4025 of the rotatable shaft 4020 is formed from an ELR material. In some cases, as described herein, the bearing 4010 is formed of ELR material or includes a coil or loop formed of ELR material. Shaft 4
The excitation of the 020 coil 4025 generates a magnetic field that causes the shaft to float relative to the bearing 4010. In some cases, the bearing 4010 is formed in a variety of shapes to assist in positioning the shaft 4020 relative to the bearing 4010. Stator and / or armature (
Application of a second magnetic field (not shown) causes the shaft to float, but rotates the shaft.

In FIGS. 40B-K, the bearing assembly 4030 includes a rotating shaft 4050 having a coil 4055 that encloses a portion of the bearing 4040, and thus the rotatable shaft 4050 can be donut shaped. In some cases, the coil 4055 of the rotatable shaft 4050 is formed from an ELR material as described herein. In some cases, as described herein, the bearing 4040 is formed from ELR material or includes a coil or loop formed from ELR material. Excitation of the coil 4055 of the shaft 4050 generates a magnetic field that causes the shaft to float relative to the bearing 4040. In some cases, bearing 4040, bearing 4040
In order to assist the positioning of the shaft 4050 with respect to, it is formed in various shapes. For example, bearing 4040 can help centering axis 4050 with bearing 4040 pedestal 4045
including. Application of a second magnetic field by a stator and / or armature (not shown) causes the shaft to float but rotates the shaft.

In FIGS. 40C-K, the bearing assembly 4060 includes a bearing 4070 that includes a rotatable shaft 4080 and a coil 4075 formed from ELR material. Excitation of the coil 4075 of the bearing 4070 generates a magnetic field that causes the shaft 4080 to float relative to the bearing 4070. In some cases, the bearing 4070 functions as a stator and rotates the shaft 4080 but utilizes the coil 4075 to provide a place to float or place the shaft 4080 in a space away from the bearing 4070. Can do. In some cases, the application of a second magnetic field by the stator and / or armature (not shown) causes the shaft to float but rotates the shaft. In some cases, the bearing 4070 is formed in a variety of shapes to assist in positioning the shaft 4080 relative to the bearing 4070.

Of course, those skilled in the art will appreciate that other configurations are possible. For example, Figure 40A-
The shaft described in K to FIGS. 40C-K operates as a bearing, and the bearing operates as a shaft. Also, bearings and / or shafts control ELR elements used to float the shaft relative to the bearings, ELR elements used to rotate the shaft relative to the bearings, shaft positioning and / or rotation Used to
A plurality of ELR elements such as ELR elements may be included.

As an example, FIG. 41-K shows a five-point shaft bearing assembly 4100. FIG. The bearing assembly 4100 includes a plurality of radial bearings 4110 and a rotating shaft 4120. In some cases, radial bearing 4110 is formed as at least part of an ELR component.
In some cases, the shaft is formed from an ELR component, magnetic material, or other material. In some cases, sensors that monitor shaft movement and provide feedback to the control mechanism are formed from ELR components. The bearing assembly provides 5-axis control such as control of shaft rotation, control of shaft translation, control of shaft movement in three-dimensional space and / or control of shaft positioning.

As described herein, the bearings, rotors, and / or stators of various bearing assemblies are coils, windings that use ELR materials, such as modified, open, and / or other new ELR materials. , And / or discs. These coils,
The windings and / or disks can use tapes, films, foils, and / or wires formed of ELR material.

In forming the ELR wire, a plurality of ELR tapes or foils may be sandwiched together to form a high capacity line. For example, a coil is supported by a support structure and a support structure.
One or more ELR tapes or foils can be included.

In addition to ELR wires, bearings, rotors and / or stators can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 50 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers.
In some cases, the ELR material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

In addition to nanowires, ELR tapes or foils can be utilized as the bearings, stators, rotors described herein. There are various techniques for producing and manufacturing tapes and / or foils of ELR material. In some examples, the technique includes depositing YBCO or other ELR material on a flexible metal tape coated with a buffer metal oxide to form a coated conductor. During processing, the texture is rolled assist, biaxial texture substrate (RABiTS
) It can be introduced into the metal tape using a process or the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam assisted deposition (IBAD) process on an untextured alloy substrate. The addition of the oxide layer
Prevent metal diffusion from the tape into the ELR material. Chemical vapor deposition to produce ELR tape
Other techniques such as CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer by layer molecular beam epitaxy (ALL-MBE), and other solution deposition techniques may be utilized.

In some examples, the type of ELR material used in windings and / or other components or devices can be determined by the type of application utilizing the ELR material. For example, some applications may utilize ELR material with a BSCCO ELR layer, while other applications may use a YBCO ELR layer. That is, the ELR materials described herein are formed from a specific material (eg, YBCO or BSCCO) based on the type of machine or component that uses the ELR material, and a specific structure (eg, tape or wire) Can be formed.

The ELR materials described herein can be utilized as or within various different components of a bearing assembly utilized by a rotating machine. The bearing assembly is a ring as a rotor winding or in a winding, as a bearing winding or in a winding, as a stator winding or in a winding, as a rod or rotor or in a rod or rotor Or as part of a ring, as a lead or other coupling element between components, or as part of a lead or other coupling element.

Various types of brushed DC motors or stepping motors can utilize modified ELR films as various components or utilize modified ELR films within various components. Brushed DC motors include permanent magnet brushed DC (PMDC) motors, shunt wound brushed DC (SHWDC) motors, direct wound brushed DC (SWDC) motors, and multiple windings (C
WDC) including motor.

Various types of AC motors include single phase induction motors (eg split phase induction motors, capacitor start induction motors, permanent split capacitor induction motors, capacitor start capacitor run induction, shadow AC induction motors) and three phase induction motors ( Modified ELR films can be used as or as part of a squirrel cage motor, wire wound motor, etc.

Of course, those skilled in the art may use the modified ELR film described herein as a universal motor, printed armature, pancake motor, servo motor, electrostatic motor, torque motor, stepping motor, generator, alternator, etc. It will be understood that the present invention can be used for various rotating machines.

Various bearing assemblies described herein can exhibit improved or enhanced operating characteristics by utilizing a modified ELR film. For example, bearing assemblies can exhibit less resistance loss from the resistance of various conductive elements such as windings, lead wires, capacitive elements, or long life because certain elements do not exhibit frictional wear. possible. This means that devices using bearing assemblies with improved operating characteristics will also benefit from similar improvements. Examples of devices that can use bearing assemblies that utilize modified ELR membranes include fans, turbines, drills, electric vehicle wheels,
Includes locomotives, conveyor belts, robots, automobiles, household appliances, engines, manufacturing equipment, toys, gyros, MEMS-based motors and components, and other devices that employ rotating machinery.

In some embodiments, a bearing assembly that includes a modified ELR material can be described as follows.

A bearing assembly, comprising: a bearing formed of at least a portion of a modified ELR material; and a rotor formed of a magnetic material and disposed proximate to the bearing, the rotor comprising:
A bearing assembly that floats relative to the bearing when a magnetic field is generated by a current flowing in the modified ELR material of the bearing.

A method of manufacturing a bearing assembly, the method comprising forming a bearing of a modified ELR material and levitating relative to the bearing in response to a magnetic field generated by a current passing through the modified ELR material of the bearing. And a step of disposing a rotor in proximity to the formed bearing.

A bearing assembly comprising a bearing formed from an ELR material that exhibits a very low resistance to charges carried at temperatures of 150K and above.

A bearing for use in a bearing assembly comprising a substrate and a coil formed at least in part from a modified ELR material.

A method for manufacturing a bearing, comprising: a step of arranging a substrate; and a step of depositing an ELR material changed into a loop shape on the arranged substrate.

A bearing for use in a levitated bearing assembly, characterized by having a substrate and a coil formed from ELR material that exhibits a very low resistance to charges carried at temperatures above 150K bearing.

A bearing assembly, formed of a magnetic material, a bearing at least partially formed from a modified ELR material, a cooling system configured to maintain a bearing temperature between 150K and 313K, A rotor disposed proximate to the bearing, wherein the rotor causes the bearing to float upward when a magnetic field is generated by a current flowing in the modified ELR material of the bearing. Bearing assembly.

A method of manufacturing a bearing assembly, comprising the steps of forming a bearing of modified ELR material, and a cooling system configured to maintain the formed bearing at a bearing temperature between 150K and 313K. The rotor is proximate to the formed bearing so that it can float relative to the bearing in response to a magnetic field generated by a coupling and current passing through the modified ELR material of the bearing. And a step of arranging the steps.

A bearing assembly, formed from an ELR material that exhibits a very low resistance to charges carried at temperatures between 150K and 313K, and the temperature of the ELR material of the bearing between 150K and 313K And a cooling component for maintaining the bearing assembly.

A rotor machine, comprising a bearing formed at least in part from a modified ELR material, and a rotatable shaft formed of a magnetic material and disposed adjacent to the bearing, wherein a magnetic field is the bearing A rotor machine wherein the rotatable shaft is spaced a distance from the bearing when generated by a current flowing in the modified ELR material.

A motor that has a very low resistance to charges carried at temperatures between 150K and 313K
A motor assembly comprising: a bearing assembly formed from an ELR material; and a power component configured to supply power to the bearing assembly to generate a current in the ELR material of the bearing assembly. .

A rotary machine, comprising: a bearing configured to generate a magnetic field; and a rotor configured to rotate and disposed in proximity to the bearing based on the strength of the magnetic field, the bearing Alternatively, the rotor comprises a material that exhibits a very low resistance to charge at ambient temperature and standard pressure.

Chapter 11 Sensors Made of ELR Material Refer to Figure 1-36 and Figures 37-L through 88-L for the description of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Sensors have been described that include components formed from modified, apertured, and / or other new, very low resistance (ELR) materials. In some examples, the sensor includes a component that utilizes a nanowire of ELR material. In some examples, the sensor includes a component that utilizes a tape or foil formed from ELR material. In some examples, the sensor includes a component formed using a thin film ELR material. The ELR material provides a very low resistance to current at temperatures higher than the normal temperatures associated with current high temperature superconductors (HTS) and improves the operating characteristics of the sensor at higher temperatures.

In the following, the use of modified, apertured and / or other new ELR materials in the sensor will be described in detail. In general, various configurations of sensors using ELR materials are possible, depending on the type of sensor being designed. Various principles defining the design of conventional sensors can be applied to sensors using ELR materials as described herein. Thus, although some sensor geometries and configurations are described herein, many others are of course possible. In addition, the various examples described herein may emphasize how a particular sensor system can use sensors or sensor components formed from ELR materials. The examples are intended to be illustrative and not exhaustive. Those skilled in the art, supplied with various embodiments of the present disclosure, will be able to identify other components within the same or similar sensor system that may be formed from ELR materials.

FIG. 37-L is a block diagram illustrating a sensor 3700 incorporated in a modified, opened, and / or other new ELR material, or at least a portion of the component. Generally speaking, the sensor receives a stimulus (or measured) S and responds with an electrical output signal sout that indicates the amount, property, or state of the stimulus. Non-exhaustive examples of stimuli and their associated quantities, characteristics or conditions are shown in the table below.

The sensor 3700 includes one or more optional transducers 3705, a direct sensor 3710, and a post processing module 3715. Each optional transducer converts a first type of energy into a second signal having a second type of energy. For example, the first converter 3705a
Can convert the mechanical stimulus signal Si into an optical signal S2, which in turn is an intermediary signal
It is supplied to a second converter 3705b that converts to a thermal signal S3 to generate SN + I. The direct sensor 3710 is also a special converter that converts an input signal into an electric signal. The direct sensor 3710 receives the intermediate signal SN + I from one or more converters 3705 and converts it into an electrical signal se. For some sensors, the transducer 3705 is omitted and the direct sensor 3710 is a direct stimulus signal
Receive se. The generated electrical signal s _e is modified (eg, digitized, amplified, etc.) by post-processing module 3715 to generate one or more output signals Sout indicative of the amount, property, or condition of the stimulus can do. The post-processing module 3715 is an input terminal or output for data processors, digital converters, application specific integrated circuits, amplifiers, filters, analog / digital signal processors, capacitance-voltage converters, differential circuits, bridge circuits, etc. Terminals, conductive paths, various analog and digital post-processing electronics may be included.

Table B shows a non-exhaustive example of the types of conversions that can be performed by the converter 3705 and / or the direct sensor 3710.

In some examples, the sensor 3700 can generate a non-electrical output signal Sout that can be interpreted by a human or device as indicative of the amount, property, or condition of the stimulus. For example, the sensor can generate a light output signal indicative of movement. In such an example,
The post-processing module 3715 can perform post-processing on the intermediate electrical signal se directly from the sensor 3710 to generate a non-electrical output signal. In some examples, direct sensor 37
10 and / or post-processing module 3715 may be omitted in the examples (eg, if post-processing module 3715 generates an optical signal that can be interpreted by a human).

Sensor 3700 may include other components not shown in FIG. 37-L, including interface electronics. For example, if sensor 3700 is an active sensor, the sensor may include an excitation circuit or other excitation source (eg, an optical excitation source). As another example, the signal pre-processing and post-processing circuit can perform signal processing on a signal before or after being converted by either the converter 3705 or the direct sensor 3710. Other components that can be included in sensor 3700 include processors, digital signal processors and application specific integrated circuits,
Amplifiers, filters, light-to-pressure converters, excitation circuits (eg, current generators, magnetic field sources (including induction coils or windings, toroids, solenoids, etc.), voltage references, drivers, and optical drivers), analog- Digital converter, waveguide, oscillator, capacitance-voltage converter, ratiometric circuit, differential circuit, bridge circuit, data transmission component, ground plane / loop, antenna, bypass capacitor, noise source (eg, machine) , Magnetic, electrical, and Seebeck noise) and power sources such as batteries.

Generally speaking, the sensor 3700 is modified, opened, and / or other new E
Various ELR components may be included that are formed in whole or in part from the material of the LR. ELR components, for example, carry current, convert signals from electromagnetic signals (including current, voltage, etc.), convert signals to electromagnetic signals, or send or modify other electromagnetic signals It can be constituted as follows. For example, one or more transducers 3705, direct sensor 3710, post-processing module 3715, or other pre-processing or post-processing electronics may include ELR nanowires formed from ELR films and / or ELR thin films,
An ELR component formed from ELR tape or ELR foil may further be included.
The following list provides a non-exhaustive example of components within sensor 3700 that can employ ELR materials.
Conductors (eg electrodes, contacts, wires, conductive traces / interconnects on integrated circuits, etc.)
• Inductors, including solenoids, toroids, or other three-dimensional shapes printed on circuit boards and / or used as magnetic field sources • Inductive coils or windings • Capacitive elements (eg, parallel plates) Capacitors, cylindrical capacitors, planar capacitors, etc.)
·antenna.

Various sensors and / or sensor configurations can use ELR components formed from ELR materials. ELR components transmit signals or convert signals to electromagnetic signals, or transmit electromagnetic signals or convert electromagnetic signals to signals, as listed above, to conduct current Used to do (including current and voltage), or to send or change electromagnetic signals. ELR material of the present disclosure,
Those skilled in the art who have provided various examples of detection systems and detection principles will be able to implement other sensors having one or more ELR components without undue experimentation.

Although the examples described herein may emphasize how a particular detection system can use a particular ELR component, these examples are exemplary,
It is intended not to be exhaustive. Those skilled in the art who have supplied various embodiments of the present disclosure will be able to
Other components could be identified within the same or similar sensor system that can be formed from R components.

Those skilled in the art will appreciate that ELR materials can be used in complex detection systems that combine two or more of the individual detection systems and principles described herein, even if the combination is not explicitly described. Will do.

Further, in this application, circuits, sensors, and other components used to perform specific measurements or characterization of values (eg, resistance measurements, capacitance, inductance, voltage, current, impedance electromagnetic field strength, etc.) However, such examples are intended to be exhaustive and not exemplary. Those skilled in the art will readily understand various alternatives for making such measurements or characterizations. Various sensors are described as “detect”, “determine”, or “calculate” a specific unknown (eg, unknown resistance), unless otherwise specified. This does not mean that the quantity described by the sensor must be calculated directly. Instead, those skilled in the art will appreciate that this amount can be determined indirectly or presumptively by the sensor. For example, if the sensor is described as "detecting the resistance of element A", this description may be affected by an RLC circuit that includes element A because the time constant may be affected by an unknown resistance value. It may include determining a constant.

Also, although various components, such as capacitive elements or plates, are described herein as being “metal”, “conductive”, or “conductor”, those skilled in the art will recognize in some examples It will be understood that a capacitive element or plate can be formed in place of a semiconductor material without departing from the scope of the present invention.

In the drawings, the size of various illustrated elements or components, as well as the lateral size and thickness of the various layers, are not necessarily drawn to scale, and these various elements are for ease of viewing. In addition, it is enlarged or reduced as appropriate. Also, if a detailed description of the present invention is not required, component details such as the exact geometry, the location of the components, and the exact connections between components are abstracted in the figure and excluded in detail. Yes. Where such details are not necessary for an understanding of the present invention, the representative geometric shapes, wiring, and configurations shown are intended to be exemplary of general design and operating principles.

If some or all of the systems and devices described herein are used in applications where certain ELR materials exhibit very low resistance at temperatures below ambient temperature, low cost cooling systems may be employed. Good. As described herein, applications can be used for ELR inductors up to the same temperature as the boiling point of liquid freon, up to the same temperature as the melting point of water, or up to the same temperature as other temperatures described herein. A cooling system (not shown) such as a cooling system can be included. The cooling system can be selected based on the type and structure of ELR material utilized by the application.

There are many benefits to using ELR materials in the detection system. For example, the use of ELR material instead of HTS material in the sensor can eliminate or reduce the complexity of the cooling system required to operate the sensor, and the size, weight, implementation and operating costs of the cooling system Can be reduced. In addition, ELR materials can exhibit stronger, more subtle temperature and photon sensitivity at higher (non-cryogenic) temperatures than HTS materials, and improved heat, light and other transfer properties at higher temperatures provide. Furthermore, the ELR material may be highly sensitive to electromagnetic input signals and / or detect low currents and / or low voltages. ELR materials can also carry electromagnetic signals (input current or voltage, intermediate current or voltage, output current or voltage) over longer distances than conventional conductors with low resistance loss,
It results in low noise, reduces the need for signal amplification, and / or allows lower current levels and allows greater separation between detection components. In general, replacing conventional conductive and circuit elements such as copper conductors, conventional capacitors and inductors with ELR material can reduce resistance loss, which improves the operational efficiency of the sensor and eliminates it. Reduce heat and / or other operating characteristics such as stability, accuracy, response speed,
The operating life, capital or operating cost, size, weight, shape size, sensor density, sensitivity, selectivity, hysteresis, linearity, saturation, reproducibility, resolution, output impedance, and reliability can be improved. For example, using ELR materials for various components of the sensor (filters, oscillators, resonators, inductors, capacitors, amplifiers, etc.) would be ideal (eg higher Q, higher gain, lower noise) than components Can be allowed to work). The more ideal performance achieved by these components is
Second, the overall performance of the sensor can be improved.

Before describing the details of the various sensor systems, applications for using the sensor system 3700 will be described. FIG. 38-L illustrates an exemplary apparatus or system 87 using sensor system 8700.
FIG. System 8700 has an antenna, hardwire data interface (
Via one or more ports, interfaces, and / or I / O components 8715 such as high-speed serial buses, contact pins), user interface components (eg, displays, speakers, keypads, etc.) Receive or transmit a signal. The system includes a logic and control circuit 8705, and / or a sensor system 3700 in addition to analog or RF circuitry, memory 8710, power supply 8720, all of which are collected in a housing, package, or other unit It may be included in things.
In other examples, one or more systems 8700, such as, for example, a distributed sensor system, can be controlled in whole or in part by one or more logic and control components 8705 remote from the system 8700. it can.

System 8700 can take any of a number of forms. In one example, the system is a mobile phone, smart phone, laptop, tablet or other portable electronic device. In this example, the power supply 8720 may be a battery and the sensor system 3700 detects a microphone (eg, detects speech or other sound), an accelerometer (eg, motion, acceleration, or device orientation) ), Tactile input sensors (eg, touch screen sensors and input buttons), light and / or image sensors (eg, for obtaining photos and images), any and all of which are one or more semiconductor chips Can be formed on top.
Logic and control circuitry 8705 can include a processor, interface and I / O
The O component 8715 can include an antenna, USB port, keyboard or keypad, pointing device, display device, speaker, or other known elements. Many other well-known components in this example of a portable electronic device are of course possible,
They are not shown because they are easily understood by those skilled in the art.
I. Position sensor, displacement sensor, level sensor

In some examples, the sensor 3700 can be configured to provide an output signal indicative of a position or displacement of a fluid level proximate to a physical object or sensor. Indicating "position" means indicating the angular or linear coordinates of the object relative to a particular reference,
“Displacement” means to indicate the movement of the object from the reference position.

IA Resistance-based level sensor Figure 38A-L shows cryogenic temperature (eg liquid nitrogen, liquid helium) or low temperature (eg liquid freon) stored in a cryostat (or other suitable vessel) 3825 of depth D Fluid 38
FIG. 9 shows a schematic diagram of an example sensor 3800 configured to generate an output signal indicative of 30 levels. The sensor 3800 has a length of ELR material 3805 that can be placed on or in the support structure 3810 holding the length of the ELR material substantially parallel to the major axis of the cryostat. ELR
The material can be formed as ELR nanowires, ELR tapes, ELR thin films and ELR foils, or other configurations. A portion of the length of the ELR material may be sunk directly or in close proximity to the cryogenic fluid 3830. Sensor 3800 can include one or more current or voltage sources 3815 configured to provide a known current or voltage input signal for the length of the ELR material. Sensor 380
0 may further include a heater 3840 configured to dissipate heat in the ELR material to raise the temperature of the exposed portion of the ELR material above the temperature of the cryogenic fluid 3830. The sensor 3800 can also be coupled to the length of the ELR material at one or more known locations along the length of the ELR material (eg, by a switch or other coupling device). Current, voltage, or impedance meter 3820 can be included.

As mentioned above, the resistivity of ELR materials may depend greatly on temperature. Thus, an ELR material length composition is immersed in a cryogenic fluid 3830 (eg, FIG. 3
Shows a first low resistance (R1) when submerged below level D shown in 8A-L) and the composition is not immersed in cryogenic fluid 3830 (in some examples, warmed by heater 3840) ing)
When selected, it can be selected to exhibit a second high low resistance (R2). Therefore, ELR
The total resistance value of the material length is inversely related to the level D of the cryogenic liquid in the cryostat. The inverse relationship between level and resistance can be determined theoretically or experimentally (eg, by a calibration procedure). Also, the measured resistivity at any point along the length of the ELR material indicates whether that point is above or below level D of the cryogenic fluid.

Accordingly, the level of cryogenic fluid 3830 can be determined by the following method, which can be implemented in whole or in part by computer readable instructions. The input current signal or input voltage signal may be applied to the length of the ELR material and may be applied to the length of the ELR material to raise the temperature of the exposed portion. The resistance value of the length portion of the ELR material can be determined, for example, by measuring the voltage or current obtained directly using an impedance meter or indirectly using a voltmeter or ammeter. . Using the measured resistance and the determined inverse relationship between fluid level and resistance, the level D of the cryogenic fluid can be determined. In some embodiments, the approximate resistivity in response to the input signal is measured at one or more known points along the length of the ELR material, and the measured resistivity is determined by which of the ELR materials Used to determine if the part is immersed, so that the current level D of the cryogenic fluid can be determined.

The detection principles and methods described above can be utilized in combination with other configurations of ELR materials placed in close proximity or directly to a liquid having a known temperature. For example, a single length of ELR material 3805 is shown in FIGS. 38A-L, but multiple lengths of ELR material oriented along the long axis of the cryostat are shown in FIGS.38B-L. In order to form a longer serpentine or serpentine length 3850 on or in the support structure, it may be continuously coupled by additional ELR material or conductive material.

IB Potential difference position sensor, level sensor Figure 39A-L shows the output signal Vou formed from ELR material and indicating the displacement ("D") or position of the object
FIG. 9 shows a schematic diagram of an example potentiometric sensor 3900 having components configured to generate t. Sensor 3900 can be an ELR nanowire, ELR tape, ELR thin film, ELR foil, or ELR as described above
Other forms of material include variable voltage dividers or potentiometers 3905 such as linear or rotary potentiometers. For example, the potentiometer wiper and / or the resistive element can be formed of ELR material. The object whose position is being measured (not shown) is mechanically coupled to the wiper 3910. The position of the object is determined by applying the input voltage source 3915 (Vin) to both ends of the potentiometer 3905 and the output voltage (Vout) at the wiper 3910.
) Can be determined. For linear potentiometers,
It is known that the measured wiper voltage is approximately proportional to the displacement of the object. For other types of potentiometers, the measured wiper voltage may have another known relationship (eg, logarithmic or exponential relationship) to the input voltage.

FIGS. 39B-L are exemplary potentiometric sensors 395 having ELR components formed from ELR material and configured to generate an output signal indicative of the level or depth D of fluid 3975 in container 3980.
A schematic diagram of 0 is shown. The elements shown in FIGS. 39B-L are similar to those shown in FIGS. 39A-L. E
By coupling float 3965 to wiper 3910 of potentiometer 3905 formed at least partially from LR material, fluid level D can be detected using principles and methods similar to those described above.

FIG. 40-L is a cross section illustrating an example of another potentiometric sensor 4000 having an ELR component formed from ELR material and configured to generate an output signal (Vout) indicative of the position of an object. The sensor 4000 includes a first flexible or tilt sheet 4005 having a conductive surface 4020 that functions as a contact strip and a second rigid surface 4015 that is coated with a resistor 4010. Conductive surface 4020 and / or resistive material 4010 can be ELR nanowire, ELR tape, ELR thin film, EL
It can be formed from R foil or other forms of ELR material. The two sheets are physically separated by a separator 4040. One sheet may be grounded (or held at another known voltage) and the other sheet may be placed in series with a known input impedance Rin and voltage source 4025 Vin. When an object 4030 such as a finger presses the flexible sheet at a distance d from the edge of the sensor, the conductive surface 4020 contacts the resistive material 4010 and the output voltage Vout across the two sheets
Changes in a known manner, for example, approximately in proportion to the distance d of the object from the end of the sensor. Therefore, the position of the object 4030 can be determined by measuring the output voltage (Vout) across the two sheets. Such potentiometric position sensors can be used in numerous applications, including voice control devices, consumer and other types of control of commercial electronics. Many other uses are of course possible.

38-L to 40-L illustrate some exemplary potentiometric sensors, the illustration is not intended to be exhaustive and is provided for illustrative purposes. Other potentiometric sensors can be designed to include ELR components, as will be appreciated. For example, a potentiometric sensor that uses a resistance change to measure position or another stimulus may include a resistance, conductivity, or other ELR component formed from an ELR material. For example, references to wipers and potentiometers are only examples for such sensors, and sensors using ELR materials are variable voltage dividers, variable impedance elements, or known variable based on a given input displacement or position. Other structures that provide electrical output may be employed.

IC Capacitive Displacement Sensor In some examples, sensor 3700 comprises a capacitive plate or capacitive structure formed at least partially from ELR nanowires, ELR tape, ELR thin film, ELR foil, or other forms of ELR material Includes a capacitance displacement sensor. As a non-exhaustive example, a capacitive displacement sensor with one or more capacitive plates or capacitive structures formed from ELR material can be (1) two capacitive plates or capacitive structures (Figure 42-L, Monopolar sensor using a single capacitor formed from (Figure 44-L, Figure 45-L), (2) Three or more capacitance plates or structures) (
Differential pressure sensor using two capacitors formed from (shown in Figure 41-L), (3) electrostatic using multiple capacitive plates or capacitive structures arranged in a bridge configuration (shown in Figure 43-L) It may be a capacitive sensor bridge.

FIG. 41-L shows the general operating principle of a capacitance displacement sensor. As shown, capacitive displacement sensor 4100 uses a movable capacitive plate or capacitive structure 4110 that is displaced relative to fixed capacitive plates or structures 4105a and 4105b by a distance Δ. As a result of the changed plate shape, there is a capacitance C1 where there is a change between the movable plate 4110 and the fixed capacitance plates 4105a, 4105b
C2 varies with known amounts that can be determined theoretically and / or experimentally. The changed capacitance changes the observed output voltage (Vout) in response to the input source 4150. Thus, by monitoring the output voltage (Vout), the displacement (Δ) of the object mechanically connected to the movable capacitive plate or structure 4110 can be determined.

The sensors shown in FIGS. 42-L, 43-L, and 45-L operate on a similar principle. For example, Figure 42A-L
The two-plate monopole sensor 4200 shown in FIG. 1 has a fixed reference plate 4205 separated from the movable sensing plate 4210 by a dielectric (eg, air), and the distance d between the two plates is Depends on movement. The capacitance C1 between the two plates changes according to the distance d. As shown in FIGS. 42B-L and 42C-L, a two-plate monopole sensor can be implemented using MEMS technology. For example, the movable sensing plate 4210 may be micromachined to be supported by a flexible suspension 4220 that allows movement relative to a micromachined reference plate 4205 having a hard suspension 4225. In the capacitive sensor 4300 shown in FIG. 43-L, the two movable plates 4310a and 4310b can move relative to the four stationary plates 4305a-d arranged in a bridge configuration. In the capacitive sensor 4500 shown in the sectional view of FIG. 45-L, the central conductor 4510 of the cylindrical capacitor may be a movable capacitive element. The depth (d) inserted into the fixed outer capacitive structure 4505 affects the capacitance between the conductor 4510 and the outer structure 4505. I explained about cylindrical capacitors.
A laterally movable capacitive plate may be used in other embodiments. Of course, the various capacitive displacement sensors shown have additional interface electronics (eg, inverter 4155 and amplifier / synchronous detection 4 to generate usable electronic signals indicative of displacement or changed capacitance.
355).

FIG. 44-L shows a schematic diagram illustrating an exemplary electrostatic position sensor 4400 having components formed from ELR material and configured to generate an output signal indicative of the position of a conductive object. Figure 44
As shown in -L, if the object 4410 whose distance or displacement is measured is also conductive, the capacitive sensor 4400 is from an ELR nanowire, ELR tape, ELR thin film, ELR foil, or other form of ELR material. It may be a capacitive probe having a single capacitive plate or element 4405 that is at least partially formed and configured to capacitively couple to the conductive object 4410.
The capacitive plate or element 4405 may be coupled to the center conductor of the cable 4355 and / or other electronic equipment configured to measure the capacitance between the capacitive plate or element 4405 and the conductive object 4410. Good. Coupling capacity is capacity plate or element 4405
And the distance between the conductive object 4410. Accordingly, the sensor 4400 generates an output voltage that is related in a known manner to the distance between the probe and the object. In some examples, sensor 4400 can be used to detect non-conductive objects.

The exemplary capacitive displacement sensor configurations shown in FIGS. 45-L to 41-L are not intended to be exhaustive and in response to the displacement of one or more capacitive plates or elements. Various configurations of capacitive plates or capacitive elements that exhibit altered electrical output may be used. For example, a movable plate or element as described above may be fixed and vice versa. As another example, other capacitive elements having shapes other than plates and cylinders can be used. As yet another example, a capacitive displacement sensor may include a shield element and / or a guard ring, and one or more separate dielectrics such as a liquid, elastomer, or other non-rigid / non-rigid dielectric. The body can be included. In either configuration, one or more capacitive plates or elements (or other elements of the sensor) can be formed entirely or partially from ELR material.

Capacitive displacement sensors containing components formed from ELR materials, as will be understood, precision positioning (eg in semiconductor processing and testing), disk drives, machine tool metrology, assembly line inspection, accurate film thickness Measurements, forces, pressures, and temperatures can be used in many applications such as complex measurement systems that cause displacement.

Inductance sensors including ID variable inductance displacement sensors In some examples, the sensor 3700 includes one or more coils (or other inductive components) formed at least partially from ELR material (eg, ELR coils). Including a variable inductance displacement sensor. 46A-L are circuit diagrams illustrating an example of a linear variable differential transformer sensor 4600 ELR formed of ELR material and having an ELR component configured to generate an output signal indicative of the position of an object. 46B-L are cross-sectional views of sensor 4600 with corresponding simplified described circuit. Linear variable differential transformer sensor 4600 is composed of a primary coil 4605, two secondary coils 4610, 4615 arranged on opposite sides of the primary coil and connected in opposite phase
, Including a ferromagnetic core 4620 inserted between the primary and secondary coils (eg, inserted coaxially into a cylindrical opening between the coils and guided along the coaxial pole 4630). Although not shown, the coil can be placed in a support material that prevents the coil from contacting the core directly. One or more of the primary and / or secondary coils can be formed from the other form of ELR nanowire, ELR tape, ELR thin film, ELR foil, or ELR material. The primary coil 4605 is driven by a reference voltage signal (Vref), and the differential output voltage (Vout) across the two secondary coils is measured. Displacement of the ferromagnetic core 4620 from the equidistant center position with respect to the two second coils changes the path reluctance and thus changes the coupling between the primary and secondary coils. Thus, the output voltage (Vout) is monitored to determine the displacement of the ferromagnetic core, and in this way the displacement of the object mechanically coupled to the ferromagnetic core can be determined.

In other examples (not shown), the sensor 3700 may instead include a rotating variable differential transformer that includes one or more coils of rotating ferromagnetic core and ELR material. Such a sensor can operate on the same principle as the linear variable differential transformer sensor 4600 to measure angular displacement.

In yet another example of an inductive sensor (not shown), one or more coils are mechanically coupled to the object whose position is to be measured. In such an example, the mechanical displacement of the object results in one or more coils that change the level of coupling between the coils being displaced relative to the other coils. Thus, the displacement of the object can be determined by measuring the output voltage through one or more secondary coils. In some examples, one or more coils are provided and the object or core is moved to produce a measurable output from the coils.

Of course, as will be appreciated, these embodiments are not intended to be exhaustive, and various configurations of variable inductance or other inductance sensors may also be included within the coil or other component. ELR material can be used.

As will be appreciated, variable inductance displacement sensors that include ELR components formed from ELR materials can be used in many applications, including position feedback in servo mechanisms, gauge heads, and automatic measurements in machine tools.

IE Eddy Current Position Sensor FIG. 47-L is a cross-sectional view illustrating an example of an eddy current sensor 4700 formed of ELR material and having components configured to generate an output signal indicative of the position of an object. Sensor 4700 includes both a reference coil 4710 and a detection coil 4715 wound with a ferrite core 4720. One or more coils may be formed from the other form of ELR nanowires, ELR tape, ELR thin film, ELR foil, or ELR material. Although not shown, the sensor 4700 can also include a metal guard or other guard that directs the electromagnetic field in front of the sensor. Eddy current sensor
The 4700 can be used to measure the distance d between the sensor and the conductive object 4705. Sensor 4700 induces eddy currents in a conductive object, generating a magnetic field opposite the sensing coil,
Thereby, the magnetic impedance is changed. The altered magnetic impedance, which depends on the distance d, can be measured by detecting the imbalance between the detection coil and the reference coil. In some examples, the reference coil may be omitted and the changed magnetoimpedance determines the change in current required to maintain a constant magnetic field by measuring the absolute magnetoimpedance of the sensing coil. Can be determined.

While FIG. 47-L shows an example of a two-coil configuration of an eddy current sensor, the example shown is for illustration purposes only, and various suitable core configurations (ferromagnetic, ferrimagnetic, and air or dielectric). Coils / turns (including solenoids, toroids, and other configurations) that can be used as eddy current sensors, including non-ferrite cores such as body cores, include coils or windings formed from ELR materials be able to. Also, various eddy current sensors can use ELR coils regardless of the operation and measurement mode used. For example, a single coil vortex sensor design that detects an object by determining the current required to maintain a constant magnetic field can include a coil formed of ELR material.

As will be appreciated, an eddy current sensor with ELR material can be used as a position sensor to detect or measure the thickness of a non-conductive coating, material thickness, conductivity, plating, cracks, and
It can be used in various applications such as surface defects and other applications.

IF Lateral Inductive Position Sensor FIG. 48-L is a schematic diagram illustrating an example of a lateral inductive proximity sensor 4800 having components formed from ELR material and configured to generate an output signal indicative of the position of the ferromagnetic object 4805. It is. FIG. 49-L shows a schematic cross-sectional view of an example of a lateral guidance proximity sensor 4800 formed of ELR material and having components configured to generate an output signal indicative of the position of an object.
Sensor 4800 includes a coil 4810 wound around a core 4815, such as a ferrite core. The coil can be formed from the other form of ELR nanowire, ELR tape, ELR thin film, ELR foil, or ELR material. When the sensor is near the ferromagnetic object 4805, the inductance of the coil is changed in a manner that depends on the distance d. The changed inductance can be detected by an inductance meter 4820. Accordingly, the distance d between the ferromagnetic object 4805 and the sensor 4800 can be determined by measuring the change in inductance. By coupling a non-ferromagnetic object 4930 to a ferromagnetic object, such as a ferromagnetic disk 4935, as shown in FIG. 49-L, the sensor 4800 uses the same method as described above to the non-ferromagnetic object 4930. It can be used to determine the distance d indirectly.

48-L and 49-L show two examples of lateral inductive proximity sensor configurations, the illustrated embodiment is for illustration only and, as will be understood, various other suitable Configurations (ferromagnetic, ferrimagnetic and non-ferrite cores such as air or dielectric cores) and / or coils / windings (including solenoids, toroids, and other configurations) are possible. Various lateral inductive proximity sensors can include coils or windings formed from ELR material. Also, various lateral inductive proximity sensors can utilize ELR coils regardless of their precise operation and measurement mode.

IG Hall Effect Position Sensor Figure 50-L is a schematic illustrating the operating principle of a Hall Effect Sensor 5000 with ELR components formed from ELR material and configured to generate an output signal indicative of the position of the magnetic field and / or object. FIG. As shown, the input current applied across the terminals of the conductive strip 5005
In response to I (eg, DC current), the magnetic field (B) generates a transverse Hall potential difference (V _H ) across the other two terminals of the conductor. The output signal V _H (ie, its sign and amplitude) is a magnetic field (B
) Depending on both magnitude and direction and applied current (I). The conductive strip 5005 can be formed from ELR nanowires, ELR tape, ELR thin film, ELR foil, or other forms of ELR material. Although not shown, the Hall effect sensor 5000 includes, for example, an amplifier and a threshold electronic device (for example,
By integrating a sensor with an interface circuit such as a Schmitt trigger, it can be realized in analog or bi-level form.

The output signal of Hall Effect Sensor 5000 (or simply “Hall Sensor”) can be used to directly measure the magnetic field. Hall effect sensor 5000 can also be combined with a magnetic field source, such as a permanent magnet or other magnetic field source (eg, a solenoid or toroid) to detect position. In some examples of Hall effect sensors, a permanent magnet or other magnetic field source is coupled to the object whose position is to be measured. In such an example, since the magnetic field reaching the conductive strip varies depending on the position of the object relative to the conductive strip, the magnetic field detected by the Hall sensor thus indicates the position of the object relative to the Hall sensor. Figure
51-L is a diagram illustrating an example of a general class of Hall effect position sensors. As shown,
A magnet 5105 or other magnetic field source is located above the float object 5110 so that the float object 5110 moves up and down along the pole 5125 with respect to a fixed Hall sensor 5120 placed on top of the pole 5125. Or placed in it.

As another example illustrated by FIGS. 52A-L and 52B-L, a Hall effect sensor is a magnetic field source 5210 that can be interrupted by a movable ferromagnetic object such as a plate or vane 5215 (eg,
Permanent magnets, etc.). As shown in FIGS. 52A-L, when the vane 5215 is in a first position that creates an air gap 5205 between the sensor and the magnet, the magnetic flux from the magnetic field source reaches the Hall sensor 5000 across the gap. As shown in FIGS. 52B-L, when the vane 5215 is in the second position occupying the gap 5205, the vane shunts the magnetic flux so that the magnetic flux does not reach the Hall sensor 5000. In such an example, the magnetic field detected by the Hall sensor can therefore indicate the position or displacement of the object coupled to the vane. The vanes can be linear or rotational. Such sensors can be used in automobile sales agents, but many other applications are of course possible.

Various other sensors use the magnetoelectric transmission mechanism of Hall sensor 5000. For example, a sensor may be configured in a bridge or other network arrangement and driven by a permanent magnet (or other magnetic field source) to measure linear or angular three-dimensional position or motion (e.g.,
4) Hall sensors can be used. As another example, a Hall sensor can measure the current carried through a conductor by detecting the magnetic field generated by the current. As yet another example, Hall sensors are used to monitor disturbances to the magnetic field resulting from placing the sensor close to a metal structure, ferromagnetic structure or ferri structure, or another type of object that disturbs the magnetic field. can do.

50-L to 52-L show various examples of Hall effect sensors, the examples shown are for illustrative purposes only. Various other suitable configurations or shapes of Hall effect sensors and / or
Other components (including permanent magnets, solenoids, toroids, other magnetic field sources) used to characterize the location of an object or other types of stimulation can incorporate ELR materials. For example, various configurations can utilize Hall effect sensors comprising conductive strips 5005 made from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials. As another example, the various configurations may include magnetic field sources (eg, solenoids or toroids) generated from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials.
Can be used.

Hall effect sensor, rotational speed sensor (anti-lock system, car speedometer, disk drive, electronic ignition system, tachometer, timing wheel, shaft, gear teeth)
Can be used for many applications including, but not limited to, electronic compass, motor control, position / motion detection / switch, automobile ignition and fuel injection, fluid flow sensor, magnetic sensor, current sensor, pressure sensor, etc. It is not something. As will be appreciated, Hall effect sensors are understood to be included in, for example, automobiles, smartphones, printers, keyboards, industrial machinery, global positioning systems, and the like.

IH Magnetoresistive Position Sensor Various magnetoresistive sensors make use of the anisotropic magnetoresistive properties of conductive elements. Magnetoresistive sensors, including proximity detectors, position detectors, and rotation detectors, may be used in many of the same configurations and applications as Hall sensors. A magnetoresistive sensor is a magnetic field (eg, a field generated by a permanent magnet or other magnetic field source such as a solenoid or toroid, etc.) by monitoring the resistance of the magnetic conducting element, which changes in response to the changed magnetic field. ) Change is detected. Various configurations of magnetoresistive sensors include ELR nanowires, ELR tapes, ELR thin films, ELR
ELR components such as foil or other forms of ELR material can be used. For example, a magnetoresistive sensor may use a magnetoresistive conductive element formed from an ELR thin film, ELR foil, or other form of ELR. As another example, magnetoresistive sensors are ELR nanowires, ELR
Magnetic field sources (such as solenoids, toroids, or other induction windings) formed from tape, ELR thin film, and / or ELR foil can be used.

II Magnetostrictive Position Sensors Various magnetostrictive sensors convert magnetic energy into kinetic energy or vice versa.
Utilizes a structure formed from a magnetostrictive material that converts kinetic energy into magnetic energy. One example of a magnetostrictive position sensor uses ultrasound to detect the position of a permanent magnet (or other magnetic field source) that is movable along the length of the waveguide. Such systems can use one or more waveguides, magnetic field sources, piezoelectric sensors, and / or magnetoresistive sensors. Various configurations of magnetoresistive sensors may include waveguides, magnetic field sources, magnetoresistive sensors, or other ELR components formed from ELR nanowires, ELR tapes, ELR thin films, and / or ELR foils. Applications of magnetostrictive position sensors, as will be understood, hydraulic cylinders, injection molding machines,
Includes forges, elevators, mining, rolling, pressing, and other devices that require high resolution over long periods of time.

IJ radar position sensor Pulse radar system and continuous wave radar system (frequency modulation continuous wave radar, pulse Doppler, moving target indicator, frequency agile system, synthetic aperture radar,
Various radar position sensors (including Inverse Synthetic Aperture Radar, Phased Array Radar) transmit continuous waves of high frequency radio signals from pulses or antennas, and their position, range, altitude, direction, and / or velocity To determine, the electromagnetic signal reflected from the object is measured. The system can use the reflected signal and / or the frequency shift delay to determine the position and / or velocity of the target object. Various configurations of radar position sensors include transmitters, synchronizers, power supplies, oscillators, modulators, waveguides, duplexers /
Multiplexers, antennas, filters, receivers, pre-post processing devices, control components, and / or other ELR components formed from ELR nanowires, ELR tapes, ELR thin films, and / or ELR foils may be included.

IK Other position sensors, displacement sensors, level sensors
Other types of sensors, including ELR components formed at least partially from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials are located (e.g.,
Output signals may be generated that indicate the proximity), the displacement of the object, and / or the displacement of the fluid level. Non-exhaustive examples of other position sensors, displacement sensors, and level sensors that include ELR components that are at least partially formed from ELR material include: (1) Optical proximity, displacement and position sensors including light sources, photodetectors (photodiodes, phototransistors, CCD arrays, CMOS image arrays), light guidance and modification components (eg lenses, mirrors, fiber optic cables, filters) For example, (a) optical bridge
Sensor, (b) optical proximity detector using polarized light, (c) optical fiber sensor, (d) Fabry
Includes Perot sensors, (e) grating sensors, (f) non-linear optical sensors, (g) other optical position sensors, displacement sensors and level sensors. (2) Ultrasonic position, displacement, level sensor, (3) thickness and ablation sensor. For example, (a) an ablation sensor (eg, break wire gauge, radiation transducer sensor, light pipe sensor, capacitive or resonant ablation gauge), (b) a thin film thickness measurement sensor (eg, capacitive sensor using electrodes) Optical sensor). (4) Level sensor, eg (a) resistance level sensor, (b
) Optical level sensor, (c) Magnetic level sensor, (d) Capacitance level sensor (for example, having a coaxial capacity plate), (e) Transmission line level sensor (for example, detecting reflectance from the gas-liquid interface) Sensors), (5) pointing devices, including optical pointing devices, magnetic pickup pointing devices, inertial and gyroscope pointing devices, (6) satellite navigation systems, eg global positioning systems, global navigation satellite systems ( GNSS).

II. Occupancy Sensor, Motion Sensor In some examples, the sensor 3700 may be configured to provide an output signal indicative of the presence of a person or animal or the movement of an object within a monitored area (“occupation”). Such sensors can be used in toys, household appliances, security systems, surveillance systems, energy management systems, personal safety systems, appliances, and many other types of systems.

II.A. Capacitance Occupancy Sensor, Motion Sensor Capacitance sensors can detect occupancy or animal / human movement by measuring the effects of human or animal body volume. FIG. 53-L is a diagram showing an example of a capacity occupancy sensor or a motion sensor 5300. As shown, sensor 5300 includes one or more capacitive plates 5305 or other capacitive structures (including test plate 5305a, reference plate 5305b),
Shield (such as a driven shield), input source, and capacitive sensor 5330 or human 53
25 or various volume plates or elements caused by the presence of animals (
For example, other sensors configured to detect changes in capacitance during a change from a known reference capacitance Cref5320) may be included. Human 5325 has test plate 5305a and reference plate 5305b
Capacitance changes may occur because the coupling capacitance is formed with the human surroundings including the coupling capacitance for (C1 5310a, C2 5310b). Some or all of these components can be at least partially formed from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials.

II.B. Friction Detectors Various friction sensors are used for static or quasi-static electric fields (eg, 5415) caused by moving humans or animals that carry surface charges caused by frictional effects (or colloquially “static”). ) Detect movements of human animals or other objects by detecting medium disturbances. Figure
54-L is a diagram showing an example of a single pole frictional motion detector 5400. FIG. As shown, the friction sensor
Human 5420, one or more electrode plates 5405, or other electrode structure, impedance converter 5410 for detecting changes in charge on the electrode plate / electrode structure caused by animal or other charge carrier movement Or other post-processing electronics. These components can be at least partially formed from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials.

II.C. Photoelectric Motion Sensors Various photoelectric motion sensors detect visible or infrared light reflected or emitted from an object that produces an optical contrast between the object and its surroundings.
Detect the movement of a human animal or other object in the surveillance area. The detected light can come from a light source (light emitting diode, sunlight, moonlight, incandescent lamp, laser, etc.) or from a moving object itself (such as mid-infrared radiation from the human body). FIG. 55-L is a schematic diagram showing a general structure of the optical motion sensor 5500. As shown, the sensor includes one or more focusing devices 5505 (eg, lenses including mirrors including pinhole lenses, facet lenses, Fresnel plastic lenses, parabolic mirrors, etc.) and one or more. Light detection element 551
0 (bolometer, thermopile, pyroelectric element, photovoltaic cell, photoconductive cell, photoresistor, PVDF film, CCD sensor, CMOS image sensor) and amplifiers and comparisons configured to post-process the signal generated by the sensing element And post-processing electronic equipment 5515 such as a vessel. Some or all of these components can be at least partially formed from ELR material. For example, as described in more detail herein, the various light detection elements are:
It can be at least partially formed from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials. Since the object 5525 (such as a person) moves across the field of view of the focusing device 5505 (indicated by the arrow), the image 5520 of the object moves, thereby creating a static ambient image on the light detection element 5510. A photon flux different from the resulting photon flux is generated. The light receiving element responds with a modified or disturbed voltage. The disturbance is detected by post-processing electronics. Photoelectron detectors can be used in security systems, energy management, consumer electronics, toys and the like.

II.D. Optical Presence Sensors Various optical presence sensors detect the presence of an object in a monitored area by detecting changes in the amount of light reflected or absorbed by an object. FIG. 56-L is a schematic diagram showing an example of the light presence detector 5600. As shown, the light presence detector is a light source or emitter 56 driven by a driver 5625 that generates a light beam within the field of view of a light sensor 5620 (as described herein).
15 (for example, LED). The static background reflects the specific amount of light back for the light sensor that produces the background output signal. When the object 5640 appears within the field of view of the optical sensor 5620, it reflects or absorbs light in a manner different from the static surroundings. Light sensor and light-to-voltage converter 5
630 thus produces a detectable output that is different from the normal background signal in response to different light reflections / absorptions of the object. As shown, the light presence detector includes a light beam 56.
Various focusing and guidance elements such as a lens 5605 and a light pipe 5610 may be included to generate 45 and / or receive reflected light. Also, the sensor is a light source 5615
And a processor 5635 configured to process the output signal of the light sensor 5620 can be included. Some or all of these components can be at least partially formed from ELR material. For example, as described in more detail herein, various photosensor elements can be formed at least in part from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials. . Such detectors can be used in robots, hand dryers, sinks, toilets, light switches, other consumer products, commercial products, and household products.

II.E. Pressure Movement Sensors Various pressure movement sensors are designed to monitor changes in air pressure resulting from sudden movements of doors, windows, people, or other objects, into a closed and controlled space. Detect intrusions or other movements. FIG. 57-L is a schematic cross-sectional view showing an example of a pneumatic inclination sensor 5700. As shown, the pneumatic tilt sensor 5700 is a rigid metal plate that includes two opposing walls, a metal or metallized flexible membrane or diaphragm 5710 (metallized plastic membrane or metal foil), and a vent opening 5715. Or a metallized plate 5705 and a chamber 5725 partially formed from it. Two metal surfaces that can be formed from ELR material together have a coupling capacity. Accordingly, the deflection (from the neutral position shown by the dashed line) of the membrane 5710 caused by a sudden change in air pressure is a capacitive sensor 5720, such as a sensor using the capacitive displacement detection system and method described herein. Can be determined. Of course, as mentioned above, with respect to capacitive displacement sensors, other components of motion sensors are EL
Can be formed from R material. In other examples, the pneumatic tilt sensor 5700 can include other types of displacement sensors, such as other displacement sensors described herein, to determine membrane deflection. In such an example, the membrane and / or hard plate may not be metal or metallized.

II.F. Other Occupancy and Motion Detectors Other types of sensors, including ELR components formed at least partially from nanowires, nanotapes, nanofilms, nanofoils, or other forms of ELR materials Alternatively, an output signal indicating motion can be generated. Various other examples of occupancy sensors, presence sensors, or motion sensors may include components that are at least partially formed from ELR material. ELR material components include radar systems (described herein), other pneumatic /
Pressure gradient sensor, acoustic sensor, photoelectric sensor to detect disturbed light beam, pressure mat or other pressure sensitive surface, stress or strain detector embedded in protected area, switch including magnetic switch, vibration detector, infrared Includes motion detector, ultrasonic detector, video motion detector, face recognition system, laser detector, alarm sensor, reed switch, stud finder, triangular sensor, wired glove, Doppler radar sensor.

III. Velocity and Acceleration Sensors In some examples, sensor 3700 is a single angular velocity sensor or a multi-axis angular velocity sensor or accelerometer configured to provide an output signal indicative of the velocity or acceleration of the object. May be. The angular velocity sensor may measure the linear velocity, angular velocity, or movement velocity of the object.
An accelerometer can measure the coordinate acceleration or appropriate acceleration of an object by measuring a test mass or unit weight of a specific force. The accelerometer can be used to determine orientation, coordinate acceleration (velocity change of the object in space), vibration, impact, and fall. A plurality of accelerometers can detect a difference in acceleration such as an inclinometer.

The speed sensor and the accelerometer can be used for many applications described below, but are not limited thereto. For example, automobiles (acceleration and speed measurement, engine / drivetrain evaluation and braking system, electronic stability control system, airbag deployment), trains, volcano, commercial or industrial equipment, vibration measurement / monitoring, seismic activity measurement , Tilt measurement, gravimeter, mechanical health monitoring, aircraft / avionic equipment, inertial navigation or guidance systems, medical equipment and video game systems, consumer products including sports equipment, mobile phones, video cameras and cameras (images Stabilization and / or orientation determination), smartphones, audio players, tablet computers, laptop computers, personal digital assistants, and other portable electronic devices.

In some examples, position / displacement, velocity, and / or acceleration sensors can be used interchangeably due to the mathematical relationship between these quantities. As a first example, in low frequency or low noise applications, the displacement sensors and methods described elsewhere herein can be used to detect velocity and acceleration. Additional post-processing, such as differentiation, may be performed on the displacement sensor output signal to determine one or more of the mathematical derivatives of the signal indicative of velocity or acceleration. As a second example, in intermediate frequency or medium noise applications, the angular velocity sensors and methods described herein can be used to detect acceleration. Post processing, for example, additional differentiation, may be performed on the output signal of the speed sensor to determine a mathematical derivative of the signal indicative of acceleration. As a third example, the acceleration and / or velocity systems and methods described herein may include velocity and / or position.
/ Can be used to determine displacement. Additional post-processing, such as mathematical integration, can be performed on the acceleration and / or velocity sensor output signals to determine the velocity and / or position / displacement of the object.

III.A. Electromagnetic Speed Sensor FIG. 58-L is a schematic diagram for explaining the operating principle of the electromagnetic speed sensor. As shown,
The sensor 5800 includes a plurality of induction coils 5810, 5815 connected in series in reverse around a movable permanent magnet 5805, which may be partially or wholly formed from ELR material. According to Faraday's law, when a magnetic core in a coil is moved, a voltage is induced in the coil in proportion to the speed of the core. Thus, the output voltage across the two coils is measured to determine the speed of the core, and thus the speed of the object coupled to the core is measured. The illustrated coil arrangement is exemplary only, and other shapes may be used, such as one or more coils wound around a movable rotating magnetic core for angular velocity measurement. The sensor shown can be used to detect the speed of vibration.

III.B. Accelerometer with Inertial Mass As shown in Figure 59-L, various accelerometers 5900 have a known amount of acceleration (a) of an object 5905 coupled to an accelerometer housing 5910. It is determined by measuring the displacement of a fairly large movable earthquake or inertia proof mass 5915 coupled to the accelerometer housing by springs 5920, cantilevers, hinges or other elastic elements. To measure displacement, the accelerometer 5900 can use one or more displacement sensors, such as, for example, the displacement sensors described herein. In such examples (including examples further described herein), all or part of the inertial mass component of the displacement sensor and / or other components can be formed from ELR material.

III.C. Capacitance accelerometers Various capacitance accelerometers use a capacitive displacement conversion method using the same principles and systems described herein for capacitive displacement sensors. Determine the displacement and thus the acceleration of the object. In such an example, sensor 6000, as shown in Figure 60-L
(1) A movable proof mass 6005 supported by a spring or other elastic element 6020 (eg, a silicon spring, etc.) and configured to move within the sensor housing 6025
And (2) two or more capacity plates 6015, 6010 that can include the proof mass 6005 itself
, 6005 or element, movable proof mass (not shown), and / or static capacitive plate or element 6005 fixed in position relative to accelerometer housing 6025,
Movable plates such as 6010 or capacitive elements. Any or all of these components or other components of sensor 6000 can be formed in whole or in part from ELR material. The movement of the proof mass during acceleration varies according to the relative position of the changed capacitive element (eg C1, C2)
Capacitance is generated between them. The changed capacitance is detected in an appropriate manner (including the differential techniques and other methods described herein) and used to derive the displacement of the proof mass, then
It can be used to determine the acceleration of an object 6030 coupled to an accelerometer housing 6025. In some examples, the capacitive accelerometer may be microfabricated using MEMS technology or other technologies.

III.D. Piezoresistive accelerometers Various piezoresistive accelerometers use piezoresistive elements to proof mass displacement,
Accordingly, the acceleration of the object coupled to the accelerometer is determined. In such an example, the sensor
(1) a movable proof mass supported by a spring, hinge, or other elastic element and configured to move into the accelerometer housing; (2) in the spring or elastic element caused by the displacement of the proof mass; A piezoresistive strain gauge element for measuring strain (further details of the piezoresistive strain gauge are described herein). Any or all of these components can be formed entirely or partially from ELR material. In some examples, the piezoresistive accelerometer may be microfabricated using MEMS technology or other techniques.

FIG. 61-L shows an exploded view of an example of a piezoresistive accelerometer 6100. FIG. As shown, the lid layer 6110
The inner recess, the base layer 6105, forms a cavity in which the proof mass 6115 can move according to the acceleration. On the inner layer of silicon, the proof mass 6115 is coupled to the support ring 6120 via an elastic hinge 6125. A strain gauge integrated on the hinge 6130 provides an output signal from the terminal indicating the displacement of the proof mass and thus the acceleration of the housing.

III.E. Piezoelectric accelerometers Various piezoelectric accelerometers use piezoelectric elements to determine the displacement of the proof mass and hence the acceleration of the object coupled to the accelerometer. As shown in FIG. 62-L, in some examples, the sensor 6200 is (1) configured to move relative to the accelerometer housing 6220, via a spring, hinge or other elastic body 6210. Movable proof mass 6205 coupled to the housing and (2) piezoelectric element 6225 such as an element formed of ELR material, quartz, barium titanate, lead zirconate titanate, lead metaniobate, or other ceramic piezoelectric material And includes an element configured to respond to an electrical signal and a proof mass (shear, compression, bending, or other type of motion). Any or all of these components can be formed entirely or partially from ELR material. As shown, when the accelerometer housing accelerates, it moves relative to the proof mass, exerts a force (eg, shear, compressive or bending force) on the piezoelectric element and exhibits an acceleration. Causes an output signal. While compressive force is shown, in other configurations, the piezoelectric element can receive other types of force from the proof mass. In some examples, the piezoelectric accelerometer may be microfabricated, for example, using MEMS technology or other technologies. In some examples, the piezoelectric element can be a piezoelectric film disposed on a movable proof mass and / or on a micromachine cantilever that supports a spring, hinge, or proof mass.

III.F. Heated plate accelerometers Various heated plate accelerometers are used to detect the temperature variation caused by the movement of the proof mass, the displacement of the heated proof mass, and hence the acceleration of the object coupled to the acceleration. This is determined using the temperature sensor. Figure 63-L shows a heated plate accelerometer 6300
An example is shown (the roof component is omitted). The plate accelerometer 6300 includes: (1) a movable proof mass 6305 configured to move relative to the accelerometer housing and supported by a cantilever 6310 or hinge; and (2) a defined temperature. A heating element 6315 configured to heat the roof mass up to (eg, a resistor) and (3) separated from the proof mass by the thermally conductive gas 6325 and configured to receive heat from the proof mass passing through the gas One or more heat sinks 6320, and (4) a cantilever (or other component) derived from a proof mass, placed on or near a cantilever or hinge
One or more temperature sensors 6330, such as a thermopile, configured to determine a temperature variation that is displaced from a neutral position in the middle. Any or all of these components or other components can be wholly or partly formed from ELR material.

In yet another embodiment, the gas heated by the resistor or other heating element is
Can be used as seismic mass. The accelerometer can use a thermopile or other temperature sensor to detect temperature fluctuations caused by the movement of the heated gas resulting from acceleration (ie, from convection forces). In such examples, the heating elements, temperature sensors, and / or other components can be formed entirely or partially from ELR material.

III.G. Other speed sensors, acceleration sensors
Other types of sensors, including ELR components formed at least in part from ELR nanowires, ELR tapes, ELR thin films, ELR foils, or other forms of ELR materials, may produce output signals that indicate velocity and acceleration. it can. Non-exhaustive examples of speed or acceleration sensors (including gyroscopes and gravitational detectors such as inclinometers or tilt detectors) that include components that are at least partially formed from ELR material include the following types of speed or An acceleration sensor can be included. That is, satellite navigation systems, such as global positioning systems, global navigation satellite systems, rotor gyroscopes (eg, magnetic levitation gyroscopes, etc.)
A gravimeter using a magnetic levitation sphere, (a) a coil or sphere formed from ELR material, (b) a spool and a magnet at least partially covered with ELR material, and ), Monolithic silicon gyroscope, optical gyroscope, conductive gravimeter sensor (mercury switch, electrolytic tilt sensor), photodetector, tilt sensor using an array of piezoelectric sensors, micromachined capacitance (MEMS) sensor, Shear mode sensor, surface bulk micromachined capacitive sensor, bulk micromachined piezoresistive sensor, capacitive spring mass-based sensor, electromechanical servo (servo force balance) sensor, null balance sensor, strain gauge sensor, resonance sensor, thermal sensor ( For example, submicron CMOS process),
Including magnetic induction sensor, variable magnetoresistive sensor, optical sensor, surface acoustic wave (SAW) sensor, laser sensor, DC response sensor, triaxial sensor, modal tuned impact hammer sensor, pendulate integral gyro sensor, seat pad sensor Can do. Other non-exhaustive examples of sensors that can be formed at least in part from ELR materials include: (1) free fall sensors, (2) inclinometers, (3) laser rangefinders, (4) linear encoders, (5) Liquid inclinometer,
(6) Odometer, (7) Rotary encoder, (8) Cell thin sensor, (9) Emergency motion sensor, (10) Tachometer, (11) Ultrasonic thickness gauge, and (12) SONAR sensor.

IV. Force Sensor, Strain Sensor, Tactile Sensor In some examples, sensor 3700 includes ELR material and includes forces, strains, and / or
Alternatively, it may be a sensor configured to provide an output signal indicative of touch. Like other types of sensors, force or strain sensors containing ELR material are (1) quantitative sensors, configured to measure force and strain and reflect the measured value to an electrical output signal, Or (
2) It can be a qualitative sensor configured to detect forces or strains that exceed (or low) thresholds.

IV.A. Piezoelectric Cable FIG. 64-L illustrates an example of a piezoelectric cable used to provide an output signal indicative of force, strain, and / or touch. As shown, the coaxial piezoelectric sensor 6400 includes, for example, a piezoelectric material 6405 such as a piezoelectric polymer or piezoelectric powder that forms part of a dielectric between the central conductor core 6415 and the outer conductor sheath 6410 of the coaxial cable. When a cable is subjected to compression or stretching forces, it generates a response charge or voltage that is picked up by a conductor. Such cables can be used for various purposes including vibration monitoring and car traffic. These cables can be adapted so that all or part of the central conductor core and / or outer conductor shield is formed from ELR material.

IV.B. Complex force sensors (including load cells)
Complex force sensors or force cells (1) use a first transducer to transmit unknown forces to an intermediate signal and (2) use a second transducer (ie a direct sensor)
The intermediate signal is immediately converted into an electrical output signal. 65A-L transmits the applied force 6505 as a displacement, which is then measured by a displacement sensor 6515, such as the linear variable differential transformer sensor or other displacement sensor described above, spring 6510 or others. FIG. 6 shows an example of a complex force sensor 6500 having a force-displacement transducer. FIGS. 65B-L illustrate a second example of a complex force sensor 6550 having a bellows 6555, diaphragm, or other force-pressure transducer that transmits the applied force to the pressurized fluid. The generated pressure of the fluid is then measured by the pressure sensor 6560 described herein. In a third example, not shown, the unknown force deforms one or more strain gauges (described herein) disposed in the bridge configuration via mechanical components (eg, elastic members). Let A strain gauge converts deformation into an electrical signal.

Other complex force sensors / force cells have different operating principles (cantilever, bending beam,
Compression, tension, universal, shear, torque, hollow) and / or different structures (bending beam, parallel beam, binocular beam, canister, shear beam, single column, multi column, pancake, load button, single end shear Beam, double-ended shear beam, "S" type, in-line rod end, digital electromotive force, diaphragm / membrane, torsion ring, bending ring, pulling, or load pin). The complex force sensors described herein may use ELR materials in direct sensors (as described herein) that convert intermediate signals into electrical output signals.

IV.C. Strain Gauges Various strain gauges measure the strain (deformation) of an object by generating and / or measuring piezoresistance changes in resistance resulting from deformation. FIG. 66-L is a diagram illustrating an example of a wire strain gauge 6600 that can be used to generate an output signal indicative of strain. As shown, the strain gauge is a resistive element 66 coupled with an elastic insulating backing 6605.
10 (such as a wire or foil) and can be glued or connected to an object experiencing an applied strain. The altered resistance can be measured using a Wheatstone bridge or other resistance sensor. The resistive element and / or the resistive sensor can be formed from an ELR material. Although various shapes can be used, in many cases, the resistive elements are formed in a serpentine form with a plurality of longitudinal segments that are much longer than the transverse segments. Multiple strain gauges can be placed (eg, to measure strain on different axes). Multiple strain gauges can also be placed in a bridge configuration.
In some examples, the strain gauge can also include a temperature compensation component to compensate for resistance changes due to temperature changes. ELR materials can be incorporated into other types of strain gauges, including semiconductor strain gauges.

IV.D. Switch Tactile Sensors Various touch switch tactile sensors detect contact forces at defined points. FIG. 67-L is a diagram illustrating an example of the switch tactile sensor 6700. As shown in the cross-sectional view of Figure 67-L, the sensor
6700 is grounded, flexible or pressed, separated from conductor 6710 (foil, conductive trace, conductive ink printed or placed on hard backing 6740, etc.) secured by separator 6735 with hole 6720 Possible conductive surfaces 6705 (flexible foils, mylar films, polypropylene films printed with conductive ink, etc.). Fixed conductor is pull-up resistor 67
Connected to 30. When the applied force (f) from the object 6740 deflects the flexible conductor downward through the hole, the flexible conductor contacts the fixed conductor 6710b and grounds the pull-up resistor to drive the down output voltage To do. When a plurality of detection areas are provided, the detection areas can be multiplexed by the multiplexer 6725. Of course, other configurations are similar on / off
It can be used to achieve an off-switching effect. (For example, two flexible conductive surfaces can be used in place of a fixed conductor, which can connect a flexible conductor rather than a fixed conductor to a pull-up resistor). In such a switch configuration, pull-up resistors, flexible conductive surfaces, fixed conductors, and / or other components can be formed entirely or partially from ELR material.

IV.E. Piezoresistive Tactile Sensors Various piezoresistive pressure sensors detect contact force by detecting changes in the resistance value of the piezoresistive element resulting from contact force at defined points. FIG. 68-L shows a cross-sectional view of an example of a piezoresistive tactile sensor 6800. As shown, sensor 6800 includes one or more conductive pushers 6805 separated from conductive plate 6815 or other conductive surface by a force sensitive resistor 6810, such as a conductive elastomer or pressure sensitive ink. The force (f) applied to the conductive pusher 6805a causes a change in resistance contact area and / or a change in resistance thickness.
Either of these results in a resistance change between the pusher and the plate that can be detected and processed to determine that a contact force has occurred. FIG. 69-L shows another example of a piezoresistive tactile sensor 6900. As shown, the sensor includes two or more electrodes 6905, 6910. The electrodes are arranged on a plastic film carrier or other film carrier (not shown) that is formed in a comb or other shape and is in contact with a semiconductor polymer 6915 that is a force sensitive resistor. For piezoresistive tactile sensors, resistive elements, conductor elements and / or other components, all or a portion thereof can be formed from ELR material.

IV.F. Capacitive Tactile Sensors Various capacitive pressure sensors are defined at a defined point: (1) The changed geometry of the capacitive elements in the sensor (changed between the elements due to the applied mechanical force) The presence of a conductive object (such as a human finger) that binds to the capacitive element in the sensor in a manner that varies with the distance, the modified surface area of the element) or (2) the distance between the object and the capacitive element The contact force is detected by detecting the change in capacitance caused by. All types of capacitive tactile sensors, including those described in more detail herein, are EL
Components including capacitive elements such as electrodes, other conductors formed from R material can be included.

Generally speaking, a first class of capacitive sensors is a force-displacement transducer (in response to an applied force) that produces a displacement of the capacitive element that the sensor measures using a capacitive displacement sensor. It can be understood to include a button or the like coupled to another elastic component, such as a chamber filled with a spring or elastomer. The capacitance displacement sensor used may be any of the capacitance displacement sensors described in FIGS. 41-L to 45-L, etc. herein. FIG. 70-L is a cross-sectional view of an example of the capacitive touch sensor 7000. FIG. Capacitive tactile sensor 7000 includes a first flexible or tilted conductive electrode 7005 or capacitive element that is separated from a second conductive electrode 7015 or capacitive element by an elastic dielectric 7010. The second electrode can be patterned or disposed on a rigid base 7020. The dielectric used may have a high dielectric constant. Force (f) 7 by object 7025
When 030 is applied, the first flexible electrode 7005 is deformed to change the capacitance between the two electrodes. The sensor 7000 can detect the changed capacitance and analyze it to determine that a force has been applied. The changed capacitance is measured by any method known in the art, including measuring the time delay caused by the variable capacitance, or using the sensor 7000 as part of the oscillator and measuring the frequency response of the oscillator. can do.

71A-L show another example of a capacitive tactile sensor 7100. Capacitive tactile sensor 7100 includes a pair of electrodes 7105a, 7105b disposed or coupled to a lower surface of a touch surface 7110, such as a glass or transparent polymer touch screen surface. The electrode 7105b is grounded. The two electrodes
It can be arranged in a comb configuration or other suitable configuration. The pair of electrodes is a capacitance sensor 7120 that uses methods known in the art as described above to measure capacitance.
Has a baseline coupling capacitance Ca monitored by. When the conductive object 7115 (eg, a finger) approaches the surface, the conductive object 7115 capacitively couples the first electrode 7105a and the second electrode.
Combined with electrode 7105b (denoted Cat, Cbt), changes the total capacitance measured by capacitance sensor 7120. The coupling capacitance between the object and the two electrodes 7105 may be a function of the distance from the electrode to the object and the applied force (if the conductive object is deformable). Although only two electrodes are shown, an array, grid (row and column), or other multiple electrode configurations can be utilized. When multiple electrodes are used, various capacitances between various combinations of multiple electrodes can be monitored to detect tactile contact positions.

71B-L show another example of a capacitive tactile sensor 7150. Capacitive tactile sensor 7150 includes a ground electrode 7105 coupled to the underside of a touch surface, such as a glass or transparent polymer touch screen surface. The electrode has a baseline coupling capacitance (Ca) that is monitored by a capacitance sensor 7120. When a conductive object 7115 (for example, a finger) having a unique coupling capacitance with respect to the ground (Cgnd) approaches the surface, it forms a coupling capacitance with the electrode 7105 (indicated by Cat), and the capacitance sensor 7120 Vary the total capacity measured by. The coupling capacitance between the electrode 7105 and the conductive object 7115 is a function of the distance of the object from the electrode and the applied force (if the conductive object can be deformed). Although one electrode is shown, an array, grid (row and column), or other multiple electrode configurations may be utilized, and the capacitance between the multiple electrodes and ground will determine the tactile contact location. It can also be monitored for detection.

IV.G. Other force sensors, strain sensors, tactile sensors
Non-exhaustive examples of force, strain, and tactile sensors that can include components formed at least in part from ELR materials are (1) pressure sensitive mats, (2) unknown to known mass gravity A sensor that balances the force of (3) a sensor that determines the acceleration of a known mass to which an unknown force is applied, (4) a sensor that balances the unknown force against the generated electromagnetic force, (5
) Sensor to measure fluid pressure obtained by converting unknown force to fluid pressure, (6) Sensor designed with piezoelectric film used in active mode or passive mode such as active ultrasonic coupling touch, and rubber A sensor having a passive passive piezoelectric strip placed on the skin or other touch surface, a piezoelectric membrane switch that can use a laminated or spring membrane placed piezoelectric membrane, a piezoelectric membrane impact switch, and a piezoelectric membrane Piezoelectric tactile sensor, including vibration sensor (7
ME) including MEMS threshold tactile sensor formed from silicon material and having mechanical hysteresis
MS sensors, (8) use of surface acoustic wave technology to measure the recognition of sound waves propagating in objects resulting from the user touching the surface, or the absorption of ultrasound waves passing over a touch screen panel (9) Optical sensors, including those that use LEDs and photodetectors to detect changes in light intensity resulting from touch events, (10) Piezoelectric to detect applied force Includes piezoelectric power sensors, including those that use transducers or resonators.

Non-exhaustive examples of force sensors, density sensors, level sensors that can be formed at least in part from ELR materials are: (1) Hang meter, (2) Hygrometer, (3) Magnetic level gauge,
(4) Includes a nuclear density meter, (5) a torque sensor, and (6) a viscometer.

Non-exhaustive examples of applications of force sensors, strain sensors, tactile sensors described herein include robotics, touch screen displays, keyboards and other devices, biomedical devices such as dental instruments, respiratory monitors, Includes prosthetic devices, assembly line counter switches and industrial equipment such as automated processes and shaft rotation, impact detection, utility metering, vending machines and instruments.

V. Pressure Sensor In some examples, sensor 3700 may be a sensor that includes ELR material and is configured to provide an output signal indicative of pressure.

VA Complex pressure sensor
Pressure sensors that include ELR materials can include complex pressure sensors. In complex pressure sensors, the unknown pressure is one or more deformable elements (eg Bourdon tubes, diaphragms, capsules, bellows, barrel tubes, membranes, thin plates, or others that undergo structural changes under pressure Component) and generate a mechanical displacement measured with a displacement sensor, such as the displacement sensor described herein. FIG. 57-L described above illustrates such a complex pressure sensor that can use a capacitive sensor to measure displacement.

VB Piezoresistive Pressure Sensors Various pressure sensors using piezoresistive elements measure pressure. Such pressure sensors can use ELR components, such as piezoresistive elements, resistive elements, conductive elements, all or part of ELR material. Figure 72-L
FIG. 9 shows a cross-sectional view of an example of a complex pressure sensor 7200 that can be used as an aneroid barometer. As shown, the sensor includes a vent chamber 7220 and a pressure chamber 7205 having a diaphragm 7210 that responds to pressure p with mechanical displacement. The diaphragm is mechanically connected to the strain gauge 7215 (as described herein) so that the strain gauge provides an electrical signal indicative of the mechanical displacement of the diaphragm to the post-processing electronics 7225. In some examples, the diaphragm can be formed from silicon using micromachining techniques.

FIG. 73-L shows a cross-sectional view of another example of a pressure sensor 7300 that can be formed in whole or in part from ELR material. As shown, the sensor includes a pressure chamber 7325 having a vent 7320 and a diaphragm 7305 responsive to pressure due to bending. Thin diaphragms can be made by microfabrication or by processing silicon. One or more piezoresistive elements 7310, 7315 (eg, piezoresistive strain gauges) embedded in the membrane and support rim structure can be selectively diffused, implanted, doped, or doped into the silicon region. It can be formed by processing. When the pressure deflects the membrane 7305, the deflection strain causes a change in the resistance of the piezoresistive element within the membrane and can be detected using a resistance sensor. In some examples, one or more piezoresistive elements can be connected to a Wheatstone bridge or other bridge configuration.

Of course, other configurations of piezoresistive pressure sensors are possible. Other configurations include a piezoresistive pressure sensor that uses an intermediate scaling pressure plate (or other protective structure), and
Including, but not limited to, a sensor having packaging configured to facilitate measurement of absolute pressure, differential pressure, and gauge pressure. In some examples, the piezoresistive element may be temperature compensated (by a temperature stable resistor or other temperature compensation circuit), or other post processing may change the resistance value of the piezoresistive element with temperature. May be performed to compensate.

VC Variable Reluctance Pressure Sensor Various pressure sensors measure pressure by detecting the change in reluctance of a differential transformer resulting from the displacement of a magnetic conducting diaphragm. Such pressure sensors are EL elements such as coils, other conductors, or magnetic conducting elements, all or part of which are formed from ELR materials.
R component can be used. 74A-L and 74B-L are cross-sectional views showing a part of variable reluctance pressure sensor 7400. FIG. As shown, sensor 7400 includes an assembly formed from a coil 7415 wound around an E-shaped core 7410 and a magnetically conductive diaphragm 7405 separated from the assembly by a gap. 74A-L show the diaphragm in the neutral position with D1 gap. As shown in FIGS. 74B-L, when the pressure changes, the diaphragm bends (in a direction that depends on the pressure change) and changes the size of the air gap to D2. The size of the air gap modulates the inductance of the core coil assembly. Thus, the change in inductance of the assembly can be measured to determine the pressure. The sensor 7400 typically includes two core coil assemblies that are arranged on either side of the diaphragm and arranged as a differential transformer so that the change in inductance and thus the pressure is determined.

VD other pressure sensors
Non-exhaustive examples of pressure sensors that include components that are at least partially formed from ELR material include: That is, (1) a mercury pressure sensor, (2) a displacement measured using the capacitive displacement sensor or technique described herein (eg, a silicon diaphragm that functions as a capacitive plate or other capacitive plate) Complex pressure sensors such as silicon diaphragm capacitive pressure sensors that use pressure-displacement sensors (membranes, diaphragms (eg silicon diaphragms), bellows, etc.), (3) diaphragms or similar pressure-displacement elements Optoelectronic pressure sensors, including sensors that use a Fabry-Perot interferometer to measure displacement, (4) indirect pressure sensors that use flow meters as differential pressure sensors, (5) Pirani gauges, ionization gauges ( Vacuum sensors such as Baird and Alpert vacuum sensors), gas resistance meters, membrane vacuum sensors (MEMS silicon mounting), 6) barograph (barog
raphs), (7) barometer, (8) boost gauge, (9) hot filament ion gauge, (10
Including McLeod Gauge, (11) Permanent Downhole Gauge, (12) Time Pressure Gauge.

VI. Flow Sensor In some examples, sensor 3700 includes an ELR material and outputs an output signal that indicates the volumetric flow rate or mass flow rate of a fluid such as a liquid or gas (or a related quantity such as the local or average velocity of the fluid). It may be a sensor configured to provide.

VI.A. Pressure gradient flow sensor Various flow sensors are orifices, perforated plugs, venturi pipes (tapered pipes)
One or more pressure sensors are used to measure the flow rate to detect the pressure gradient of a gas or other fluid caused by the introduction of a flow resistance such as. Typically, such a sensor can be used to measure the flow of a non-viscous incompressible fluid. FIG. 75-L is a cross-sectional view of an example of a pressure gradient flow sensor 7500. As shown, sensor 7500 is in the second chamber
A first chamber 7505 including a capacitive pressure sensor 7510 having 7550 is provided. After the gas has passed through the first opening or inlet 7540 and into the first chamber 7505, the gas has a first pressure P in the first chamber.
Have one. The gas then passes through a narrow channel 7525 having a relatively high pressure and into a second chamber 7550 having a second different pressure P2. The gas then flows out of the second chamber through an opening or outlet 7530. Pressure difference caused by narrow opening resistance (P1 and P2
Is determined by measuring the deflection of the membrane 7555 using a capacitance plate 7520. In such examples, the capacitive plate and / or other components can be formed in whole or in part from ELR material. Capacitance pressure sensors are shown in FIG. 75-L, but other types of pressure sensors, including sensors that include ELR materials, are included in place of the variable inductance or piezoresistive pressure sensors described herein. be able to.

VI.B. Heat Transport Flow Sensors Various heat transport flow sensors or thermo anemometers measure flow by detecting the rate of heat dissipation in a fluid medium (eg, fluid). The flow rate can be determined by analyzing the temperature, temperature difference, and / or heating output signal of the fluid medium. Examples of heat transport flow sensors are: (1) hot wire anemometer and hot film anemometer, and (2) two temperature detectors (such as resistors, semiconductors, or optical temperature detectors) and the heating placed between them. A first part that includes three partial thermo anemometers including an element; (3) a first part that is a medium temperature reference sensor; and a temperature sensor and heater coupled to the heater (both sensors may be a thermistor). A two-part thermo anemometer comprising two parts, and 4) a micro-flow heat transport sensor including a MEMS gas flow sensor that can use the thermopile as a temperature sensor, cantilever design and / or self-heating resistor sensor design. Thermo anemometer applications include turbulence measurement (in the wind tunnel), flow pattern, and blade wake (radial compressor).

FIG. 76-L is a circuit diagram of an example of a constant temperature hot wire anemometer sensor 7600. As shown, the sensor 7600 is a wire or film 7615 (conductive film deposited on an insulator such as a ceramic substrate) having a resistance heated to a temperature above the temperature of the fluid flowing across the sensor (indicated by the arrow). Etc.). The fluid cools the wire or membrane at a rate related to the flow rate. Therefore, the flow rate is (
1) determine the power required to keep the wire or membrane at a constant temperature, or (2) keep the voltage across the wire or membrane constant and the wire or membrane caused by the fluid flowing across it Can be determined (by determining the temperature dependence of the hot wire or hot tape in some examples). In Figure 76-L, a null balancing resistor bridge circuit coupled to servo amplifier 7605
7610 is reliably maintained at a constant temperature, and the output voltage Vout indicates the mass flow rate.

Of course, various configurations of hot wires or hot films, including wires supported by support needles and wedge-shaped hemispherical, cylindrical, conical, parabolic, conductive films disposed on a flat support surface. Can be used. Many other types of circuits can also be used to detect the required power to maintain a constant temperature and / or to measure temperature changes in hot wires or hot films. it can. In the thermo anemometer example described herein, various circuit components such as resistors, hot wires / hot films, temperature sensors, conductors, and / or amplifiers are formed in whole or in part from ELR materials. can do.

VI.C. Ultrasonic Flow Sensors Various flow sensors measure the flow rate using ultrasound to detect transit times or delays, frequency shifts, and / or phase shifts affected by the flow medium. In some examples, the ultrasonic flow sensor can be implemented based on the Doppler effect. In another example, the ultrasonic flow sensor may detect a change in effective ultrasonic velocity in the distribution medium. An ultrasonic flow meter generates and / or generates an ultrasonic signal and / or other constituent elements configured to function as an ultrasonic generator and / or an ultrasonic receiver Various circuits (eg, drivers, oscillators, modulators / demodulators, amplifiers, transformers, electrodes, conductors, clocks, and selectors) configured to detect frequency shifts, transit times and delays, or phase shifts / Switch etc.). All or part of these components, or other components, can be formed in whole or in part from ELR material.

VI.D. Other flow sensors
Examples of flow sensors that include components that are at least partially formed from ELR material include: (1) A transport sensor that detects the movement of a marker (eg, float, radioactive element, dye (eg, colored liquid), or another gas / liquid) introduced into the fluid whose flow rate is to be sensed, (2) DC electromagnetic flow sensor and AC electromagnetic flow sensor, which memorizes the voltage across the pick-up electrode in response to a conducting fluid intersecting the magnetic flux lines, (3) change in gas velocity using, for example, a pair of piezoelectric or pyroelectric elements Wind sensor to detect, (4) Coriolis mass flow sensor to measure mass flow directly using vibrating tube with inlet tube and outlet tube driven by electromechanical drive system, (5) deformation under flow Measure fluid flow using a drag element coupled to a rigid base by a flexible beam or other elastic cantilever, such as measured using a strain gauge as described herein Drag force sensor, (6) Bucket and stopwatch, piston meter / rotating piston, variable area meter,
Turbine flow meter, Waltman meter, single jet meter, paddle wheel meter, multiple jet meters, mechanical flow meter such as Pelton wheel, elliptical gear meter, nutation disc meter, (7) Venturi meter, orifice plate, Pressure-based flow meters such as doll tubes, pitot tubes, multi-hole pressure probes, (8) optical flow meters, (9) open channel flow methods such as level to flow, area / speed, dye testing, and acoustic Doppler flow rate Sensor to use,
(10) thermal mass flow meter, (11) electromagnetic ultrasonic and Coriolis flow meter (including those described herein), (12) cryogenic flow sensor, (13) air flow meter, (14) gas meter, (15) Includes water meter, (16) Sensor that uses laser Doppler flow measurement.

VII. Acoustic Sensor Including Microphone In some examples, sensor 3700 may be a sensor such as a microphone that includes ELR material and is configured to provide an output signal indicative of acoustic input. Most examples of acoustic sensors are moving diaphragms and displacement transducers (such as those described herein) configured to generate electrical signals indicative of diaphragm deflection in response to acoustic inputs.
including. The displacement transducer or other component of the acoustic sensor may include ELR material.
Some examples of acoustic sensors may include additional components such as interface equipment, mufflers, focusing lenses or reflectors, or other components. For example, acoustic sensors such as microphones include hearing aids, recorders, karaoke systems, VOIP systems, movie production, telephones (cell phones, etc.), acoustic engineering, portable computers, voice recognition systems,
It can be used for many applications such as compound sensor hearing, microbalance, SAW device, vibration detection and so on.

VII.A. Condenser Microphones Various condenser microphones measure acoustic signals using capacitive displacement detection techniques to detect diaphragm movement caused by the acoustic energy of the signal. Figure
77-L shows a circuit diagram of an example of a condenser microphone 7700. The circuit shown in FIG. 77-L is generally self-evident from the figure, and the value of the component depends on the application, and thus description thereof is omitted here. As shown, a condenser microphone is disposed on or coupled to a first microphone 7705 configured to respond to acoustic pressure by moving relative to a fixed backplate 7710. Alternatively, a diaphragm 7702 having a capacitive element is included. The fixed back plate is coupled to a charging source 7720 such as an external power source, electret layer, internal power source, or phantom power source. The movement of the diaphragm relative to the backplate 7710, and thus the movement of the first electrode, generates a capacitive discharge that can be detected and amplified to produce an electrical signal indicative of the detected acoustic signal. As shown, in some examples, the condenser microphone 7700 is also used as an actuator to provide mechanical feedback (eg, deflection of the diaphragm 7702 due to electrostatic forces) to improve linearity and frequency range, for example. A feedback circuit configured to drive the acting second electrode 7715 can be provided. In some examples, the first electrode 7705 and the second electrode 7715 may be formed on the diaphragm 7702 in a comb pattern. In a condenser microphone, electrodes, other conductors, and / or other components of the circuit (eg, capacitors, resistors, and amplifiers) can be formed in whole or in part by ELR material. In some examples, the diaphragm may be made of silicon. In some examples, the diaphragm itself can act as a moving plate for the sensing capacitor. Of course, in some examples, the charging source can be coupled to the moving electrode 7705 rather than the fixed backplate 7710. In some examples, a condenser microphone can include two diaphragms that are electrically connected and provide a range of polar patterns (eg, cardioid, omnidirectional, figure 8).

In some radio frequency (RF) or high frequency examples of condenser microphones, the additional RF signal generated by the low noise oscillator is (1) modulated by capacitance changes caused by diaphragm deflection (eg, Frequency modulation) or (2)
Modulated by a resonant circuit including a sensing capacitor (eg, amplitude modulation). The demodulator produces a low noise audio frequency signal. In such instances, some or all of the low noise oscillator and / or components of the resonant circuit (conductive, resistive, capacitive, or inductive element) also form all or part of the ELR material. be able to.

Condenser microphones that incorporate ELR materials can be used in many applications including, but not limited to, telephone transmitters, karaoke microphones, high fidelity studios, and laboratory microphones.

VII.B. Electret Microphones Various electret microphones measure acoustic signals by using a detection technique for detecting displacement of the electret diaphragm caused by the acoustic energy of the signal for capacitive displacement. FIG. 78-L is a schematic sectional view showing an example of the electret microphone 7800. As shown, the electret microphone includes a metallized electret diaphragm 7820 (which in some examples may be formed from Teflon FEP or foil). The metallized electret diaphragm 7820 further includes an electret layer 78.
10 or metallization layer 78 coupled to or placed on the element
5 and separated from the back plate 7815 that is metalized or metallized by voids. The two metal elements 7805, 7815 can be connected via a resistor or impedance element 7825. Metal elements and / or resistive elements can be formed in whole or in part from ELR materials. The displacement of the electret diaphragm produces a modified output voltage across the resistive element. Electret layer 7810 is formed from a conventional crystalline dielectric material that is permanently electrically polarized. In some examples, the electret microphone must not use an applied DC bias voltage. In other cases (for example, for ultrasonic detection), a DC bias voltage is applied. In some examples, the electret microphone may include a preamplifier. An electret microphone incorporating ELR material can be used in a number of applications. Examples include, but are not limited to, headsets, mobile electronic devices such as telephones, mobile phones, laptop computers, mobile computers such as tablet computers, high quality recording microphones, and small recording devices.

VII.C. Dynamic Microphones Various dynamic microphones measure acoustic signals using electromagnetic induction techniques that detect diaphragm movement caused by the acoustic energy of the signal. FIG. 79-L is a cross-sectional view of the moving coil dynamic microphone 7900. As shown, the microphone 7900 is a movable induction coil 791 that can be formed in whole or in part from ELR material.
A diaphragm 7905 coupled to zero is provided. When the diaphragm is displaced in response to the acoustic wave, the coil moves within the magnetic field of the magnet 7915 and generates an output voltage that varies across the coil exhibiting displacement by electromagnetic induction. Another example of a dynamic microphone includes a ribbon microphone that includes a metal ribbon (often a corrugated ribbon) placed in the magnetic field of a magnet. Ribbon vibrations caused by acoustic waves can generate an output electrical signal across the ribbon that exhibits vibrations. The ribbon and / or other components of the ribbon microphone can be formed from ELR material. In some examples, the ribbon can be formed from ELR nanowires.

VII.D. Solid-state acoustic detectors Various solid-state acoustic detectors are used to stimulate (modulate, pressure, fluid, Humidity, gas molecules, displacement, stress, force, temperature, chemicals, compounds, biomolecules, mass, or fine particles, etc.) mechanical vibrations in a solid state sensor to characterize or measure a stimulus Measure. Solid state acoustic detectors can be used, for example, in gravity measurements and acoustic viscosity sensors. The solid state acoustic detector may include one or more piezoelectric elements such as thin film piezoelectrics, crystals, or other piezoelectric crystals. The solid state acoustic detector is placed in contact with or on top of the electrode and is comb-shaped and can be formed from ELR material. Various piezoelectric elements can be placed above, below, or within a substrate, such as a silicon substrate. In other examples, the piezoelectric element is coupled to a piezoelectric plate or piezoelectric quartz (eg, by photolithography) or an electrode (which can be formed from an ELR material), or an electrode disposed on the piezoelectric plate or piezoelectric quartz It can be.

In some examples, the solid state acoustic detector is (1) a piezoelectric “transmitter” element at one end of a plate or path configured to generate an acoustic wave from an electrical signal, and (2) from the transmitter. Piezoelectric "receiver" element at the other end of a plate or path configured to receive acoustic waves modulated by stimuli through a plate or path during radio transmission and convert those acoustic waves into electrical signals Including both. In some examples, the intermediate plate or path between the transmitter and receiver is chemically selective, adhesive, adsorbent, hygroscopic, or other types of Films, coatings, or other surfaces that change mechanical, chemical, electrical, or other properties in the presence of chemical, mechanical, or other stimuli can be included. Examples of solid state acoustic detectors include flexural plate sensors, surface acoustic wave plate sensors, and sensors that use the following types of acoustic waves. That is, as acoustic waves, bulk acoustic waves, thickness-slip mode,
Use shear horizontal acoustic plate mode, shear surface acoustic wave (or surface shear wave), Love wave, surface skimming bulk wave, Lamb wave, etc.

Depending on the design and the type of operating mode used, the solid state acoustic sensor can be used to measure pressure, torque, shock, force, mass, vapor, dew point, humidity, biomolecules, chemicals, temperature, thickness, or other stimuli. Can be used to detect, measure or characterize.

VII.E. Other acoustic sensors
Non-exhaustive examples of acoustic sensors including components that are at least partially formed from ELR material include: That is, the acoustic sensor is (1) a piezoresistive transducer configured to convert an acoustic signal into an electrical output signal (eg, a stress sensitive resistance or a bulk resistance powder in a micromachine diaphragm pressure sensor). Resistive microphone including carbon microphone including piezoresistive microphone, (2) Light source (laser light source etc.),
Optical interferometers (such as Michelson interferometers), and fiber optic microphones (including fiber optic interference microphones) including reflector diaphragms, structural acoustic testing, industrial turbines, turbojets, rocket engines, industrial and surveillance acoustics Fiber optic microphones that can be used in harsh environments such as monitoring, MRI, jet noise reduction, or applications that require EMI / RFI immunity, (3), particulates that respond to vibration to acoustic pressure, window A laser microphone that directs the laser to a surface or other plane and then analyzes the reflected light; (4) a piezoelectric element (to directly convert acoustic pressure or other mechanical stress into an electrical signal indicative of an acoustic signal (
For example, a piezoelectric microphone using a piezoelectric crystal, a piezoelectric ceramic disk, or a piezoelectric film, and can be used for, for example, an audio activation device, blood pressure measurement, underwater acoustic measurement, contact microphone, acoustic pickup in a musical instrument Piezoelectric microphones, (5) MEMS sensors that include diaphragms formed from silicon and configured to use the same or similar displacement detection principles as condenser microphones, (6) geophones, (7) hydrophones, ( 8)
Includes seismometers, (9) ultrasonic sensors, (10) SONAR sensors.

VIII. Humidity Sensor and Moisture Sensor In some examples, sensor 3700 may be a sensor that includes ELR material and is configured to provide an output signal indicative of moisture or moisture of the sample. As used herein, “moisture” refers to the amount of water contained in a liquid or solid that can be removed by absorption or adsorption without changing its chemistry. As used herein, “humidity” refers to absolute humidity (mass of water vapor per unit volume of wet gas) or relative humidity (same actual air at any temperature relative to the maximum saturated vapor pressure at temperature). Reference can be made to the ratio of vapor pressure. Humidity sensors and moisture sensors can be used in a number of applications, including pharmaceutical testing, weather sensing, and soil surveys.

VIII.A. Capacitive Humidity Sensors and Capacitive Moisture Sensors Various humidity sensors and moisture sensors are used to measure how electrostatic samples (air samples, solid samples, etc.) introduced into the dielectric gap between the sensing capacitor electrodes are. Measure humidity and moisture by determining whether it affects capacity. In some examples of humidity sensors, the sensing capacitor is an air capacitor and the air sample is introduced between capacitive electrodes or capacitive plates. In another example of the humidity sensor, the electrodes of the detection capacitor are separated by a dielectric material such as a hygroscopic polymer film, and the dielectric constant is greatly influenced by moisture and moisture. In some examples, the humidity sensor is a thin film humidity sensor having two electrodes, the electrodes are arranged in a comb or other configuration and covered with a dielectric film, and the dielectric constant of the sensor is humidity And affected by moisture. In some examples of moisture sensors, a solid or liquid sample is
It is introduced into the space between two capacitive electrodes (eg, capacitive plates). Appropriate methods can be used to determine the absolute capacitance (or change in capacitance from a reference value) of moisture or moisture sensing capacitors (eg, using an oscillator system). In some examples, differential techniques can be used to detect capacitance values. In some examples, the moisture or humidity sensor can include a temperature compensation circuit and / or use other post-processing circuitry to compensate for temperature effects. FIG. 80-L is a diagram illustrating an example of a simplified circuit of a humidity sensor 8000 configured to measure the humidity of an air sample using the sensing capacitor 8050. The circuit shown in FIG. 80-L is generally self-explanatory and is omitted from this description because the value of the component depends on the application. In capacitive humidity sensors and capacitive moisture sensors, the sensing capacitor electrodes are all or part of other circuit components (resistors, conductive traces, potentiometers, other capacitors, inductors, amplifiers, diodes, temperature compensation circuits, etc.) Can be formed from ELR material.

VIII.B. Electrical Conductivity Humidity Sensor, Electrical Conductivity Moisture Sensor Various humidity sensors and moisture sensors determine how the sample affects the resistance of the moisture sensing conductive element (usually a non-metallic conductor). To measure moisture and moisture.
The moisture detecting conductive element is a solid polymer electrolyte or polystyrene film treated with sulfuric acid, and its resistance strongly depends on moisture and moisture. In such a sensor, a known method can be used to determine the absolute resistance of the moisture detection conductor or the moisture detection conductor (or a change in resistance from a reference value, etc.). In some examples, differential techniques can be used to detect resistance values. In some examples, the moisture sensor or humidity sensor can include and / or use, or other post-processing, temperature compensation circuitry that compensates for temperature effects. FIGS. 81AL and 81BL are a top view and a cross-sectional view showing an example of an electrically conductive humidity and moisture sensor 8000 configured to measure moisture and moisture of a sample. As shown in the figure, the sensor includes two conductive electrodes 8105a and 8105b. Conductive electrodes 8105a, 8105b are connected to terminals 8110A, 8110b, disposed in a comb or other configuration on substrate 8120, and coated with a hygroscopic conductive layer 8115 whose resistance varies with humidity and / or moisture. Or coupled to the conductive layer 8115. Although a planar substrate is shown, other substrate configurations (eg, probe tips) are used in other embodiments. In some examples, the humidity sensor may be a solid humidity sensor that uses a porous oxide surface or layer (eg, a porous aluminum oxide layer) that allows water molecules to penetrate. The electrode can be formed in whole or in part from ELR material.

In soil and other solids, the solid aqueous component may contribute primarily to its electrical conductivity. Accordingly, other exemplary electrical conductivity moisture sensors include soil or other solid conductivity sensors that include two or more electrode probes configured to be inserted into soil or other solid samples. By applying an electrical signal input to the electrode (eg, AC current),
The sensor determines the conductivity of the soil or solid and thus the moisture content of the soil or solid. In other soil or solid electrical conductivity sensor examples, two or more coils can be used to measure solid electrical conductivity. For example, the sensor can include a first transmit coil for inducing eddy currents in soil or solids and a receive coil to block a portion of the secondary induced electromagnetic field. In such examples, the electrodes and / or coils can be formed from ELR material.

VIII.C. Other humidity sensors, moisture sensors
Non-exhaustive examples of humidity and moisture sensors that include components that are at least partially formed from ELR material include: That is, the humidity sensor and moisture sensor are (
1) a thermal conductivity sensor that measures the thermal conductivity of the gas and / or utilizes a thermistor-based sensor that includes a thermistor or other component formed entirely or in part from ELR material; and (2) Mirror whose surface temperature is adjusted accurately (by heat heat pump)
And / or a photodetector that detects a change in the reflective properties of the mirror due to water condensation and / or formed from a material of a photodetector, heat pump, LED, controller, temperature sensor, and / or ELR An optical hygrometer that can detect the dew point temperature of the gas containing other components and (3) the amount of change in the cooled plate that can be realized in part by SAW sensors and / or includes peltiers, heat sinks, piezoelectric elements A vibrating hygrometer that can detect (4) a weight hygrometer that compares the mass of an air sample with an equal volume of dry air; and
(5) Includes a thermometer with two thermometers.

IX. Radiation detectors and particle detectors In some embodiments, sensor 3700 is a sensor that includes ELR material, and energy and / or alpha particles, beta particles, neutrons, cosmic rays, ionizing photons (high frequency ultraviolet, X
Sensor configured to provide an output signal indicative of the presence of other characteristics of ionizing radiation, including radiation, gamma radiation, etc.).

IX.A. Scintillation detectors Various scintillation detectors detect or measure ionizing radiation by detecting light emitted from the luminescent material in response to ionizing radiation. The scintillation detector is a scintillator material that fluoresces or produces light in response to ionizing radiation (phosphor, alkali halide crystals (sodium, iodine, etc.), cesium iodide, organic liquids, or plastics (anthracene Optical photon detector and / or photomultiplier tube or electron multiplier tube (may include photomultiplier tube or channel photomultiplier tube, photocathode, bent channel amplification structure, anode) including. In some examples, the scintillation detector also includes an amplifier, a counter circuit, and / or other post-processing circuitry. In the scintillation detector, an optical photon detector, a photomultiplier tube, or an electronic multiplier,
Amplifiers, counter circuits, and / or other post-processing circuits can be formed in whole or in part from ELR material. When ELR materials are used in optical photon detectors, the high sensitivity of ELR materials to photons and / or their very low resistance eliminates the need for photomultiplier tubes and / or at ambient temperatures. Even the amount of photogrowth required to produce a usable signal is reduced.

IX.B. Ionization detectors Various ionization detectors or gas detectors detect or measure ionizing radiation by detecting the production of ion pairs in response to ionizing radiation. FIG. 82-L shows an example of an ionization chamber sensor 8200. As shown, the ionization chamber sensor includes a chamber 8205 filled with a solid, gas, or liquid that ionizes in response to ionizing radiation (eg, argon, helium, nitrogen, methane, or air) and a voltage source. 2 with opposite polarity biased
Two electrodes 8215, 8210 (ie, an anode and a cathode, eg, as a coaxial cylinder and / or otherwise, which can be arranged in a parallel plate configuration). In some embodiments, the chamber walls can form one electrode. The ionization current generated at the electrode in response to ionizing radiation can be measured by a galvanometer or electro. In an ionization chamber sensor, all or some of the electrodes and / or other components can be formed from ELR material.

Other types of ionization-based radiation detectors or gas detectors known in the art such as proportional chambers, Geiger-Muller counters, and / or wire chambers, some of which are similar in configuration to the ionization chamber sensor 8200 Similarly, electrodes, wiring, and / or other components formed entirely or in part from ELR material can be used.

IX.C. Other radiation and particle detectors
Non-exhaustive examples of radiation sensors and particle sensors that include components that are at least partially formed from ELR material include: That is, the radiation sensor and the particle sensor
(1) (a) Diamond detectors, (b) Diffusion coupled diodes, surface barrier diodes, ion implantation detectors, epitaxial layer detectors, lithium drift pn coupled detectors, silicon diodes including avalanche detectors (or other diodes) ), (C) a semiconductor material having at least two contacts formed across it (in a parallel plate or coaxial configuration) (eg, S
_{i, Ge, CdTe, HgI 2} , GaAs) Germanium detector including a semiconductor detector such or solid state radiation detectors and particle detector, cloud and bubble may include a coil formed from (2) ELR material Chamber, (3) dosimeter (eg, quartz fiber dosimeter, membrane badge dosimeter,
(Including thermoluminescence dosimeters, solid state (MOSFETs and silicon diodes) dosimeters), (4
) Microchannel plate, (5) Solid nuclear track detector, (6) Spark chamber, (
7) Neutron detector, (8) Superconducting tunnel coupling sensor, (9) Micro calorie.

X. Temperature Detector In some examples, sensor 3700 includes ELR material and is configured to provide an output signal indicative of the absolute or relative temperature of an object or material (eg, relative to a reference object). It can be. Such sensors can be used for a number of applications. For example, circuit protection,
Self-time delay circuit, heating thermostat, flow meter, liquid level detector, self-reset overcurrent protection device, meteorology, climatology, electronic medical thermometer, degaussing coil circuit, climate control system, cooling water temperature or oil temperature monitoring, Can be used for gas turbine temperature measurement, engines, kilns, and other industrial systems and processes.

XA Thermal Resistance Sensors Various temperature sensors include ELR material and can detect or measure absolute or relative temperature by detecting the resistance change of the sensing element caused by temperature. The temperature sensor is (1) a resistance temperature detector, (2) a pn coupled detector that can use a diode or a coupled transistor as a sensing element, formed on a silicon substrate and / or for temperature compensation Pn-coupled detector used, (3) silicon resistance positive temperature coefficient (PTC) sensor embedded or packaged in micromachine structure as discrete silicon sensor, metallized on one side and contacted on the other side PTC sensor formed from n-type silicon cell, including (4) thermistor. Any or all of the above temperature sensors can include, for example, temperature sensing elements and / or leads, wires, and electrodes that include ELR material.

The resistance temperature detector 8300 shown in FIGS. 83A-L to 83C- is a metal (such as platinum or tungsten), alloy, or other conductive material that has a temperature-dependent resistance (usually having a positive temperature coefficient). A sensing element 8305 formed from a conductive or semiconductive material (such as germanium) and disposed on, encased in, or supported by a support structure 8310. For example, as shown in FIGS. 83A-L, the sensing element 8305a may be a thin film disposed on a planar substrate (eg, silicon film) or other support structure 8310a in a serpentine or other configuration. As another example, as shown in FIGS. 83B-L, the sensing element 8305b may include a wire wrapped around a support structure 8310b (such as a glass core) and / or a support structure 8310b.
It may be a wire having glass that is uniformly fused around. As yet another example,
As shown in the cross-sectional view of 83C-L, the sensing element 8305C is formed in a coil shape whose shape is maintained by a support structure 8310c (eg, a sealed housing or ceramic cylinder filled with inert gas). It may be a wire. Detection element 8305 is 1
It can be bonded to one or more leads, eg, a lead insulated with silicone rubber, PTFE insulator, glass fiber or ceramic. The detection element 8305 can be wired in any suitable configuration including, for example, a two-wire, three-wire, or four-wire configuration (including a four-wire Kelvin connection). Although not shown in FIGS. 83A-L to 83B-L, the detector 8300 further includes:
A casing, housing, or other protective element (eg, a coating) may be included. Other examples of resistance temperature detectors include carbon detectors. In some examples, instead of sensing elements formed from conventional conductive metals, alloys or other materials, sensing elements exhibit ELR material (ELR nanowires) because the resistance of the ELR material is highly temperature dependent. , ELR film, etc.) can be formed in whole or in part. Other components of the resistance temperature detector (contacts, leads, etc.) can also be formed from ELR material.

The thermistor includes a sensing element formed from a high temperature dependent material such as metal oxide, silicon or germanium, and may include additional components such as contacts and leads. The detection elements can be formed into droplets, rods, cylinders, rectangular flakes, chips, and thick films. Thermistors can be polymer PTC thermistors; bead-type thermistors (bare, glass / epoxy coated or encapsulated), chip thermistors with lead surface contacts, silicon, glass, alumina, or another type A thermistor manufactured by depositing a semiconductor material on the substrate, a printed thermistor (a thermistor printed with a thermistor ink on a ceramic substrate), a positive temperature coefficient thermistor (a thermistor having a ceramic PTC material). Various other thermistors may use ELR materials as sensing elements and / or contacts and / or leads, as will be appreciated.

XB Other temperature detector
Non-exhaustive examples of temperature sensors that include components formed at least partially from ELR material include: (1) a sensing element assembly that includes bare, insulated wire or membrane, termination, protective tubing, and / or thermowell A thermocouple or thermopile including a junction, including a thin film thermocouple bonded to the foil junction and disposed in a suitable manner such as free filament or matrix style; and (2) phosphorus Optical temperature sensor such as fluoropic sensor using compound, (3) infrared light sensor, (4) interference sensor, (5) thermochromic solution sensor, (6) acoustic temperature sensor (SAW and plate wave degree sensor Including), (7) Bimetal sensor, (8) Coulomb blockade temperature sensor, (
9) Silicon band gap temperature sensor, (10) Temperature sensor used in calorimeter, (11)
Includes piezoelectric temperature sensor, (12) exhaust thermometer, (13) Galdon gauge (14) heat flux sensor (15) microwave radiometer, and (16) net radiometer.

XI. Chemical Sensors In some examples, sensor 3700 includes ELR material and is configured to provide an output signal indicative of the presence, amount, concentration, or other characteristic of one or more target compounds. Such sensors include oxygen monitoring, exhaust system, glucose monitoring, carbon dioxide monitoring, analytical equipment, industrial process monitoring, quality control, worker environmental monitoring, explosive or VOC detection,
It can be used in electronic nose, oxygen and trace gas medical monitoring, saliser, weapon detection, environmental pollutant detection, or hydrocarbon fuel leak detection.

XI.A. Electrical Sensors, Electrochemical Sensors Various chemical sensors such as metal oxide semiconductor sensors, electrochemical sensors, potentiometric sensors, conductivity sensors, amperometric sensors, elastomer chemi-resistors, chemical capacitors, chemical FETS Determine the electrical effect of the analyte on the material, and / or measure the electrical properties of the analyte. Some of the chemical sensors are further described herein. Various electrical and electrochemical sensors can utilize components formed from ELR materials.

XI.B. Metal Oxide Semiconductor Chemical Sensors Various metal oxide semiconductor chemical sensors target the presence, type, concentration, or another characteristic of one or more target chemical species (eg, oxidizing gases). It can be detected by detecting a change in resistance of the semiconductor detection layer from a change in the concentration of the seed. Typically, metal oxide semiconductor chemical sensors are semiconductor sensing layers, electrical contacts, leads, and / or other electrical connections to determine layer resistance, and heating elements for temperature control (eg, thermistors)
including. In some examples, the sensors may be formed in a monolithic integrated sensor array that includes an on-chip control system and a data acquisition component. FIG. 84-L is a diagram showing an example of a circuit of the SnO 2 metal oxide semiconductor chemical sensor 8400. The circuit shown in FIG. 84-L is a general self-explanatory diagram, and since the value of the component depends on the application, description thereof is omitted here. FIG. 84-L shows that the semiconductor sensing layer (8405) can be incorporated into a Wheatstone bridge circuit or other bridge configuration, etc. in combination with the thermistor 8410 or other heating element. Non-exhaustive examples of semiconductor layers that can be used are SnO ₂
Tin oxide thin films or thick films (including pure films formed on silicon devices, Pt or Pd doped films), titania, rhodium doped TiO2, and ZnO. Non-exhaustive examples of target species that can be detected include oxygen, carbon monoxide, hydrogen, methane, and other hydrocarbons. In metal oxide semiconductor chemical sensors, some or all of the components, including detection layers, electrical contacts, leads, heaters, and / or other components (such as resistors, amplifiers, or other interface components) are ELR materials May be formed entirely or partially.

XI.C. Electrochemical sensor Fig. 85-L is a schematic diagram showing an example of the electrochemical sensor 8500. The electrochemical sensor is a potentiometric sensor (such as one that measures voltage by oxidation-reduction reaction), current measurement sensor ( Current measurement etc.)
And / or conductive sensors (such as those that measure conductivity, resistance and / or capacitive impedance), or another type of electrochemical cell. As shown, the electrochemical sensor includes two or more electrodes. The electrodes are an indicator electrode, a reference electrode 8510 for correcting the electrochemical potential generated by the electrode and electrolyte, a working electrode 8515 where a chemical reaction occurs, and an auxiliary electrode
8520 may be included. The electrode is partially or completely immersed in the electrolyte 8525. Electrolyte 8525
Has analyte dissolved in it and connects to electrical control and / or measurement components (such as potentiostat, bipotentiostat, polypotentiostat, amperostat, electrometer, or galvanostat) via wires Has been. In some examples, the one or more electrodes and / or wires are platinum,
It can be formed from palladium, carbon coating materials and / or ELR materials, can be formed into a thin or thick film, and / or can be treated to improve reaction rate / lifetime. In some examples, the sensor may include other components, for example, a membrane such as an ion selective membrane or an oxygen permeable membrane (such as Teflon®). Examples of such sensors include pH meters, Clark oxygen sensors (used for glucose monitoring, etc.).

XI.D. Other chemical detectors
Various examples of chemical sensors that include components that are at least partially formed from ELR material include: That is, chemical sensors (1) elastomer chemi-resistors or conductive polymer composites that adsorb and swell specific chemical targets and exhibit altered (increased) resistance in the presence of chemical targets (some implementations) In the example, it may be formed of a thin film),
(2) A chemical capacitive sensor (two comb or parallel electrodes, two parallel plates, etc.) with capacitive elements separated by a dielectric (such as a water sensitive polymer), where the capacitive element is a chemical target A chemical capacitive sensor that absorbs a specific chemical target to indicate a modified capacitance in the presence of (a chemical capacitive sensor may be formed in a thin film or MEMS configuration), (3) its gate Chemical FETs (including field effect transistors (FETs) that are replaced and / or coated with one or more layers of chemically selective materials (gas selective membranes, ion selective membranes, enzyme membranes, etc.) Chemical FETs (including ISFET, MEMFETs, SURFETs, ENFETS) that have different responses (different conductances, etc.) in the presence of selected target species such as target gases, target ions, or target enzymes (4 ) High energy U to ionize the child
A photoionization detector that can use V light and an electrometer that measures the small current generated by ionization, (5) the structure as a result of target molecule adsorption on the structure surface, such as a chemical selective coating Elastic wave devices (quartz crystal or other microbalance sensors, SAW sensors, acoustic plate mode sensors, flexural plate wave sensors) that can detect changes in mechanical properties of structures due to mass changes and surface stress changes ), Other mass or weight sensors, microcantilevers, (6) ion mobility spectrometers using electrical deflection fields that separate ions with different ion mobility, (7) heat generated by chemical reactions with coatings Or a temperature sensor (thermistor, etc.) coated with a chemically sensitive material such as an enzyme immobilized in a matrix to detect absorbed heat ) Thermochemical sensor using (8) Peristor and other catalytic sensors capable of detecting flammable gases, (9) Spectroscopic system including infrared and ultraviolet spectroscopy system including non-dispersive infrared system, (10) Light source An optical fiber converter containing a photodetector, an analyte, including a reagent, a phase film or an indicator, and in the presence of the analyte, reflection, absorption, surface plasmon resonance, luminescence (fluorescence and phosphorescence), chemiluminescence, Or fiber optic transducers that undergo changes in optical properties that can be detected with evanescent wave technology, (11) organisms,
Biosensors that detect membranes, tissues, cells, organelles, nucleic acids, enzymes, receptors, proteins, and / or antibodies, (12) sensors that include an enzyme layer (such as heat, electrochemical, or optical)
, (13) piezoelectric bodies, (14) disposable chemical sensors and biosensors, (15) electronic nose and electronic tongue (
Taste sensor of electronic odor sensor), (16) Saliser, (17) Carbon dioxide sensor, (18) Carbon monoxide detector, (19) Catalytic bead sensor, (20) Electrolyte-insulator-semiconductor sensor, (21)
Hydrogen sensor, (22) hydrogen sulfide sensor, (23) infrared point sensor, (24) microwave chemical sensor, (25), nitrogen oxide sensor, (26) olfactometer, (27) perister,
(28) Zinc oxide nanorod sensor, (29) Nuclear quadrupole resonance (NQR) sensor, (30) Ion channel switch sensor, (31) Piezoelectric sensor, (32) Temperature measurement sensor, (33) Magnetic sensor, Including.

XII. Optical Sensor In some examples, the sensor 3700 may be an optical sensor that includes ELR material and is configured to provide an output signal indicative of the measured optical signal. Such sensors can be used for a number of applications. Examples include, but are not limited to, portable computers such as mobile devices, cameras, video cameras, tablet computers, mobile phones, medical diagnostics, medical imaging, nuclear and particle physics, astronomy, computed tomography, and image scanners. It is not something.

XII.A. Photocathodes, phototubes, photomultiplier tubes Various photosensors contain ELR materials and use photocathodes, ie, negatively charged electrodes coated with photosensitive compounds. Can be detected or measured. These photosensors include a photoelectric tube and a photomultiplier tube including a channel photomultiplier tube. In such examples, all or part of the electrodes, dynodes, or other components can be formed from ELR material.

XII.B. Quantum Photosensors Various quantum photosensors contain ELR materials and can detect or measure light by converting an incoming optical signal directly into an electrical signal via a light effect. Quantum light sensor (1
) A photodiode including an avalanche photodiode and having a PN or PIN structure and integrally forming a current-voltage converter; (2) A phototransistor capable of amplifying the photodiode current by current gain (3) CdSm, CdSe, S
Photoresistors that can be formed from i, Ge, PbS, InSb, etc. and have a resistance value that changes with respect to incident light due to the light effect, (4) Cooled quantum photosensors, such as dry ice, liquid helium, liquid Quantum photosensor, cooled by nitrogen or thermoelectric cooler and dewar (5
) Charge-coupled element (CCD) sensor (frame transfer CCD sensor, electron multiplying CCD
One or two imaging photodiodes, including sensors and enhanced CCD sensors), complementary metal oxide semiconductor (CMOS) image sensors, or active moving pixel image sensors where each pixel includes a photodetector and an active amplifier Dimensional array (and / or an array of other quantum photosensors such as phototransistors or photoresistors), any or all of these photosensors are made of ELR material in conductive elements such as wires, ground planes, gates, etc. May be included.

XII.C. Thermal Light Sensors Various thermal light sensors contain ELR materials and detect or measure thermal radiation. Thermal light sensor
(1) Thermocouples including Golay cells or thermopneumatic detectors including microfabricated Golay cells, (2) Thermocouples including bismuth, antimony, silicon and MEMS thermopiles (including multiple thermopile sensors arranged in an array for thermal imaging) Thermopile infrared sensor (described elsewhere in this specification), (3) Pyroelectric sensor including pyroelectric ceramic plate or element and two or more electrodes, (4) Active far infrared sensor (5) Hot electron light detection (6) Including gas flame detector. Any or all of these photosensors can include ELR material in temperature sensing elements such as leads, electrodes, and / or conductive elements.

XII.D. Bolometers FIGS. 86A-L are schematic diagrams illustrating an example of a bolometer 8600A. As shown, the bolometer is
Absorbing element 8605A (thin foil, metal film, thin film, foil formed from ELR material) configured to absorb infrared or other electromagnetic radiation and convert it to heat to detect the resulting increase in temperature , Wire), and the temperature sensor 8625A described herein can be used.
86B-L show an example of a bolometer. The bolometer uses a temperature sensitive resistor (such as the resistance temperature detector described herein) as an absorbing element 8605B and to provide thermal resistance temperature detection, and its altered resistance is a reference resistance 8610. Can be used or measured using other methods of detecting resistance (such as fiber optic techniques). Absorbing elements include platinum, silicon, germanium, TaNO, ELR film, wire, or foil, thin foil, metal film,
Alternatively, it can be formed from an ELR material. In some embodiments, an array of bolometers can be used for IR imaging applications. In yet another example, the thin film or foil bolometer may be formed on a silicon or glass film that can be supported by silicon so as to “float” over the micromachine cavity.

XII.E. Other optical sensors
Various examples of photosensors that can include components that are at least partially formed from ELR materials are (1) colorimeters, (2) contact image sensors, (3) LEDs as photosensors
, (4) Nichols radiometer, (6) fiber optic sensor, (7) photoionization detector, (8) optical switch, (9) Shack-Hartmann sensor, and (10) wavefront sensor.

XIII. Dust Sensor, Smoke Sensor, Other Particle Sensor In some examples, sensor 3700 can be a sensor that includes ELR material, such as smoke, dust,
Or configured to provide an output signal indicative of suspended particles, such as other impurity particles. In some examples, the sensor detects optical light, smoke, dust using a photosensor (such as a photodiode or phototransistor) and an interface circuit to measure the scattering of light produced by a light emitter such as an LED. It may be a vessel. In such examples, the light sensor, light emitter, and / or other component elements can include ELR material.

XIII.A. Ion Sensors, Dust Sensors, Impurity Sensors, Smoke Sensors Various ion sensors detect smoke particles by monitoring the reduction of ionization of air by ionized particles. Such ionization sensors include (1) an ionization chamber formed of two opposing electrodes (such as parallel plate electrodes or coaxial cylindrical electrodes) and having an electric field applied between them, and (2) alpha particles or A small amount of radioactive elements (such as americium 241) in or near the chamber that produces other ionizing radiation. The sensor can detect particulate smoke or other types by detecting a reduction in air ionization that appears as a reduction in current across the two electrodes. All or some of the electrodes and / or other components of the ionization sensor can be formed from ELR material.

XIV. Electrical Sensor, Electromagnetic Sensor In some examples, sensor 3700 includes an ELR material and is an output signal and / or circuit, material, medium that is characteristic of an electrical signal, a magnetic signal, or an electromagnetic signal Or a sensor configured to provide electromagnetic properties of the object. Non-exhaustive examples of such sensors include: (1) ammeters or current sensors (galvanometers, Darson Val galvanometers, mobile iron ammeters, electrodynamic motion ammeters, hot wire ammeters, digital ammeters, integrating ammeters , Milliammeter, microammeter, picoammeter, etc.), (2) voltage sensor or voltmeter (
Analog voltmeter, amplified voltmeter, digital voltmeter, tube voltmeter, AC voltmeter, field effect transistor voltmeter), (3) oscilloscope, (4) electrical reactance and susceptance sensors (eg ohmmeter), ( 5) Magnetic flux sensor, (6) Magnetic field sensor or magnetometer (flux gate, superconducting quantum interference element (SQUID), atomic spin exchange relaxation free rotating coil, Hall effect (described herein), proton precession), Joseph Magnetometer, inclinometer, and cesium vapor magnetometer for optical excitation, (7) electric field sensor, (8) power sensor, (9) S matrix meter (network analyzer, etc.), (10) power spectrum・ Sensors (spectrum analyzer, etc.), (11) Electrical resistance and conductivity sensors (ohmmeter, etc.), (12) Multimeter (13) Metal detector, (14) Leaf detector, (15) Magnetic anomaly detector, (16) Phase or phase shift sensor, (17) Ohm meter, (18) Radio direction finder, (19) Energy meter , (20), inductance sensor, (21) capacitance sensor, (22) electrical impedance sensor, (23) quality factor sensor, (24) electrical spectral density sensor, (
25) Electrical phase noise sensor, (26) Electrical amplitude noise sensor, (27) Transconductance sensor, (28) Transimpedance sensor, (29) Power gain sensor, (30) Voltage gain sensor, (31) Current gain sensor , (32) frequency sensors, (33) charge sensors (vibrators, valves, or electrometers such as solid state electrometers), (34) duty cycle meters, (35) decibel meters, (36) diodes and transistors Characteristic sensors (eg, for measurement of drop, current gain, or other diode / transistor parameters) can be included.

XV. Other sensors
Non-exhaustive examples of other sensors including components that are at least partially formed from ELR material are as follows. That is, other sensors include rice ball alarm, dew point warning alarm, fish counter, hook gauge evaporator, global solarimeter, radiometer, rain gauge, rain sensor, snow gauge, stream gauge, tide gauge, air fuel ratio meter, crank Sensor, curve feeler, defect detector, engine coolant temperature sensor, manifold absolute pressure (MAP) sensor, parking sensor, radar gun, speedometer, throttle position sensor, tire pressure monitoring sensor, transmission fluid temperature sensor, turbine speed sensor, Vehicle speed sensor, wheel speed sensor, airspeed indicator, altimeter, attitude indicator, depth gauge, inertial reference unit, magnetic compass, MHD sensor, ring laser gyroscope, coordinator, variometer, vibration structure gyroscope, yaw rate sensor No.

Additional sensors with ELR components or appropriate mounting As mentioned above, by employing ELR material for the sensor, the sensor gives orders of magnitude lower resistance than the best conventional conductors under the same conditions, thereby greatly Results in high sensor performance. Also, such a sensor can be manufactured in a smaller and more compact form.

In fact, many sensors can be manufactured using the thin film manufacturing techniques described herein that are common to semiconductor chip manufacturing processes. Many sensors using ELR materials can be manufactured as single layer devices. Therefore, the processing steps for manufacturing such a sensor are:
Simplify to include only photolithography, ion milling, contact metallization, and dicing (or equivalent). In fact, the path width or ELR required for ELR materials
Conventional manufacturing techniques are sufficient because the width of the path made of the material is larger than most widths used in current state-of-the-art semiconductor manufacturing techniques. However, the chip may be made using minimal scale manufacturing techniques, which can leave a lot of room on the chip for additional sensors or other circuitry. Since there are fewer restrictions due to layout and distance issues, circuit designers can make more precise and rapid chip designs.

Some of the sensors described herein are often integrated together with other components such as logic circuits, RF components, analog circuits, etc. on a single chip (eg, MEMS, silicon or other semiconductor chip). . By using an on-chip sensor, the chip may benefit from clearly improved performance. By using ELR material in the chip, the chip can enjoy greater density of circuits. For example, by using ELR material, the chip enjoys less heat loss and can move more current per line, so thinner conductive lines can be used. Since current travels less on each line, EMF on adjacent lines, on sensors, and on other circuits
Can be reduced. Interconnects as well as lines can be made from ELR materials. Furthermore, since the signal line loss is greatly reduced, the signal can be transmitted without amplification. Also, considering the very low resistance of ELR materials, the distance between interconnected sensors or sensor components is very long with little resistance loss (
Thousands of meters). Thus, the detection system can also be distributed over much longer distances than is currently possible.

In some examples, the sensor may include an ELR material that has operating characteristics that vary within a temperature range designed to operate the sensor. Considering that the response behavior of the sensor (and ELR material) can be determined, as will be appreciated, such behavior can be compensated for in the temperature range of the sensor.

Referring to FIG. 88-L, an exemplary system 8800 includes a circuit 88 coupled to a temperature control circuit 8815.
10 and logic circuit 8820 (although various blocks are interconnected in FIG. 88-L, fewer interconnects are possible). The circuit 8810 uses one or more sensors formed at least in part from the ELR materials described herein. The logic circuit controls the temperature control circuit, which in turn cools the circuit 8810, such as a cryogenic or liquid gas cooler
/ Control the refrigerator. Thus, to increase or decrease the sensitivity or response of the system 8800, the logic circuit 8820 sends a signal to the temperature control circuit 8815 to decrease or increase the temperature of the circuit 8810. As a result, circuit 8810 using ELR material causes the ELR material to increase or decrease conductivity, thereby increasing or decreasing the sensitivity and response of the circuit.

Although individual sensors are shown, the sensors can be combined together to form a sensor bank, multiplexer, or other more complex sensor system, grid or array. As with the other categories of sensors described herein, various configurations of sensor arrays using ELR materials are possible, depending on the type of sensor array or multi-sensor system being designed. The ELR materials described herein are used in complex sensor systems that include a combination of two or more of the sensors and principles described herein, even if the combination is not explicitly described. be able to. In some examples, a complex sensor system may use a sensor in which two or more different or heterogeneous sensors are simply not similar or homogeneous. In some examples, the sensor system or sensor array includes a fairly homogeneous sensor all formed of ELR material, or is a heterogeneous mixture of different types of sensors, some of which are not ELR materials Formed and includes a combination of different sensors and different materials. In some examples, a complex sensor system or sensor array may use two or more sensors formed from two or more homogeneous sensors formed of ELR material as a major component. Or, two or more inhomogeneous sensors formed on the basis of ELR material and / or homogeneous / inhomogeneous formed from both two or more conventional conductors and ELR material. A homogeneous sensor may be used.

Specific examples of sensors using components that are partially or exclusively formed from ELR material are described herein, but those skilled in the art will appreciate that various sensor configurations, such as the components listed above, It will be appreciated that ELR components may be employed to conduct current, receive signals, or transmit or modify electromagnetic signals.

Although suitable geometric shapes, wiring, circuits, and configurations for some sensors are described herein, as will be appreciated, many other shapes, wirings, circuits, and Configuration is also possible. In this application, those skilled in the art who have provided various examples of ELR materials, sensors, principles, will not undue experimentation with sensors having one or more components formed in whole or in part from ELR materials. Could be realized.

In some embodiments, a sensor that includes a modified ELR material can be described as follows.

A sensor comprising at least one transducer comprising a component formed by at least partially incorporating a modified very low resistance (ELR) material, said transducer detecting a condition and producing an output The ELR material comprises an ELR material having a first layer and an ELR having a second layer made of a changing material bonded to the ELR material of the first layer.
A sensor characterized by being formed of a film.

An apparatus for detecting a position or displacement of a substance, comprising a transducer system configured to mechanically and electrically detect the position or displacement of a substance, said transducer system being A conductive component formed from a low resistance (ELR) material, or the conductive component at least partially incorporating the modified ELR material, wherein the transducer system is responsive to the position or displacement of the substance A second output signal, wherein the modified ELR material has a first layer when composed of ELR material and a second portion composed of the modifying material coupled to the ELR material of the first layer. A device characterized in that it is formed from a modified ELR part.

An apparatus for detecting a fluid level, comprising a transducer system mechanically and electrically coupled to detect a fluid level, said transducer system having a modified very low resistance ( A component formed from an ELR) material or the component at least partially incorporating the modified ELR material, wherein the transducer system generates a variable impedance in response to the fluid level, and the ELR The apparatus is characterized in that the material is formed of a modified ELR film having a first layer made of ELR material and a second layer made of modified material bonded to the ELR material of the first layer .

An apparatus for detecting the position of an object, fluid or substance comprising a potentiometric sensor mechanically coupled to detect the position of the object, fluid or substance via a movable member; The potentiometric sensor comprises a component formed from a modified very low resistance (ELR) material or the component that at least partially incorporates the modified ELR material, the potentiometric sensor comprising the object Responsive to the mechanical movement of the movable member relative to the position of the fluid or substance, generating a variable impedance and the modified EL
The R material is formed of a modified ELR portion having a first layer when made of an ELR material and a second layer of a modifying material bonded to the ELR material of the first layer. apparatus.

A sensor for detecting a position of an object, wherein the sensor is displaced corresponding to the position of the object or at least one displaceable configured to be displaced in response to contact with the object And a transducer formed on or coupled to the displaceable member, wherein the transducer is formed from a modified very low resistance (ELR) material. Or a capacitive sensor at least partially incorporated in the modified ELR material, wherein the capacitive sensor generates a variable impedance in response to displacement of the object relative to the displaceable member. And the modified ELR material comprises a first layer when made of an ELR material and a second layer of a modified material bonded to the ELR material of the first layer. Sensor, characterized in that it is formed.

An inductive sensor comprising at least one coil and a magnetic field source, wherein the at least one
One coil and the magnetic field source are inductively coupled together such that inductance is mutually induced therebetween, and at least one of the at least one coil and the magnetic field source is at least modified Formed from a portion of a very low resistance (ELR) nanowire, the modified ELR nanowire comprises a first layer when composed of an ELR material and a second material composed of a modifying material bonded to the ELR material of the first layer. And a modified ELR film having a layer.

A Hall effect sensor comprising: at least one conductive portion configured to carry current; and a magnetic field source, wherein the magnetic field source is transverse to the current relative to the at least one conductive portion. A very low resistance (ELR) tape or nanowire arranged to induce a detection signal indicative of a change in potential, wherein at least one of the at least one conductive portion and the magnetic field source is at least partially modified The modified ELR tape or nanowire formed from has a first layer made of ELR material and a second layer made of modifying material bonded to the ELR material of the first layer Hall effect sensor characterized by being made of ELR film.

Sensor for detecting occupancy or movement of an object, said sensor comprising a transducer, said transducer being very low resistance (ELR) modified near the detection area and at least partly Having a conductive surface incorporating a material, wherein the transducer receives a friction field from an object in the detection region and generates a detection signal in response thereto or is static on the object in the detection region. Detecting a change in capacitance and generating a detection signal in response thereto, the modified ELR material comprises an ELR material, a first layer, and a modified material coupled to the ELR material of the first layer. And a second layer comprising a modified ELR film.

An angular velocity sensor, comprising: at least two coils; and a magnetic field source movable with respect to the two coils, wherein the at least two coils and the magnetic field source include the magnetic field source of the two coils. The speed is inductively coupled together to output the corresponding output signal,
At least one of the two coils and the magnetic field source is formed from a very low resistance (ELR) nanowire that is at least partially modified, the modified ELR nanowire comprising a first layer of ELR material. An angular velocity sensor comprising: a modified ELR film comprising: a second layer of a material to be modified bonded to the ELR material of the first layer.

A device for detecting force or strain on an object, having a transducer system,
The transducer system is configured to detect a force or strain applied mechanically on the object and to generate an intermediate output; electrically receiving the intermediate output; A second transducer configured to generate a detection signal in response to the intermediate output indicative of the applied force or strain, wherein the first and / or second transducer is a modified emergency A conductive component formed from a low resistance (ELR) material, or the conductive component that at least partially incorporates the modified ELR material, the modified ELR material comprising: Formed of a modified ELR portion having a layer and a second layer of a modifying material coupled to the ELR material of the first layer. Location.

A tactile sensor for detecting a contact force, wherein the tactile sensor is formed on the displaceable member and at least one displaceable member configured to be displaced in response to the contact force. Or a transducer selectively coupled to the displaceable member, wherein the transducer is a sensor formed from a modified very low resistance (ELR) material, or the modified ELR Having the sensor at least partially incorporated with material, wherein the sensor generates impedance in response to the contact force different from a steady state or default impedance, and the modified ELR material comprises an ELR material The first layer;
A second layer of a modifying material bonded to the ELR material of the first layer, and a modified E having
A tactile sensor characterized by being formed from an LR film.

At least one displaceable member configured to be displaced in response to a pressure of a fluid held in the structure and acting on the displaceable member; and formed on the displaceable member Or a transducer selectively coupled to the displaceable member, wherein the transducer is a pressure sensor formed from a modified very low resistance (ELR) material, or the modification Said pressure sensor incorporating at least partially incorporated ELR material, said sensor generating impedance in response to contact force, said generated impedance being different from a steady state or default impedance and said modified The modified ELR material comprises a first layer when made of an ELR material and a second layer made of a modifying material bonded to the ELR material of the first layer. A pressure sensor, characterized by being formed from the ELR film.

An acceleration sensor comprising at least two coils and a magnetic field source movable with respect to the two coils, wherein the two coils and the magnetic field source correspond to acceleration of the magnetic field source with respect to the coil. And at least one of the two coils and the magnetic field source is formed from a portion of at least a modified very low resistance (ELR) nanowire, A modified ELR nanowire has a modified ELR having a first layer of ELR material and a second layer of modifying material bonded to the ELR material of the first layer.
An acceleration sensor characterized by being formed of a film.

An apparatus for detecting fluid flow, wherein the fluid is held in a structure through which the fluid flows and is configured to displace in response to fluid pressure acting on a displaceable member. And a transducer formed on or selectively coupled to the displaceable member, the transducer having a modified very low resistance (ELR) A sensor formed from a material, or the sensor at least partially incorporating the modified ELR material, the sensor generating a variable impedance in response to the flow, the modified ELR material A modified ELR comprising a first layer comprising an ELR material and a second layer comprising a modifying material coupled to the ELR material of the first layer.
An apparatus characterized by being formed from a film.

An apparatus, comprising: a first conductive path carrying electrical current; and an acoustic sensor, wherein the first conductive path and / or the acoustic sensor comprises a first portion having a very low resistance (ELR) material; A second portion coupled to a first portion that lowers the resistance of the ELR material, and an acoustic signal to the first conductive path and / or the acoustic sensor is indicative of a modified impedance in the sensor A device characterized in that it induces a signal.

A moisture or moisture sensor component comprising a pair of spaced apart conductive paths formed on a surface including at least a portion of a conductive element for the sensor component, wherein the conductive At least one of the paths is a first portion made of ELR material;
And a second part made of a material to be modified that is chemically bonded to the ELR material of the first part, and moisture or moisture in contact between the conduction paths is a different impedance between the conduction paths as a sensor output signal. Moisture or moisture sensor component characterized by inducing.

A radiation or particle sensor, wherein at least one luminescent material arranged to receive incident radiation or atomic particles and generate light in response thereto, and arranged with respect to the luminescent material, to the generated light At least one photosensitive member configured to generate an output signal in response, wherein the photosensitive member and / or the conductive member are all made from a modified very low resistance (ELR) material Alternatively, the modified ELR material is partially formed and the modified ELR material comprises a first layer when made of an ELR material and a second layer made of a modifying material bonded to the ELR material of the first layer A radiation or particle sensor, characterized in that the radiation or particle sensor is formed from an ELR film formed.

An apparatus for detecting temperature, comprising a transducer configured to detect temperature,
The transducer has at least one conductive component formed from a modified very low resistance (ELR) material, or the at least one conductive component partially incorporating the modified ELR material, A system of transducers generates a variable impedance in response to the temperature, the modified ELR material comprising a first layer when the ELR material is comprised, and a modifying material coupled to the ELR material of the first layer. And a second layer comprising: a modified ELR film having a second layer.

A chemical sensor component comprising a pair of spaced apart conductive paths formed on a surface including at least a portion of a conductive element of the chemical sensor component, wherein at least one of the conductive paths A first part made of an ELR material and a second part made of a modifying material chemically bonded to the ELR material of the first part, and a chemical substance in contact between the conductive paths A chemical sensor component that induces different impedances or electrical responses between the conductive paths as corresponding output signals.

An optical sensor for detecting a received optical signal, at least one photosensitive member arranged to receive the optical signal and generate an output signal in response thereto, and to form an output terminal A conductive member, wherein the photosensitive member and / or the conductive member is formed from a modified very low resistance (ELR) material or from the modified ELR material The modified ELR is partially formed and the modified ELR material comprises a first layer of ELR material and a second layer of modifying material bonded to the ELR material of the first layer. An optical sensor formed from a film.

A current sensor, voltage sensor or electric field sensor, comprising at least one conductive part configured to carry current and a magnetic field source, wherein the magnetic field source indicates the detected current, voltage or electric field Arranged for inducing a detection signal, wherein the at least one conductive part and at least one of the magnetic field sources is a modified very low resistance (ELR) tape or The modified ELR formed on at least a portion of the nanowire
The tape or nanowire is formed of a modified ELR film having a first layer made of an ELR material and a second layer made of a modifying material bonded to the ELR material of the first layer. Current sensor, voltage sensor or electric field sensor.

A system comprising an array of a plurality of sensor elements, each sensor element comprising:
Having one or more conductive elements forming or coupled to the sensor, wherein at least a portion of the one or more conductive elements is made of ELR material; A system comprising: a first layer formed of a second layer of a material to be modified coupled to the ELR material of the first layer.

A system comprising a logic circuit or analog circuit and at least one sensor element coupled to the logic circuit or analog circuit, the sensor element comprising one or more conductive elements, The one or more conductive elements include geometry configured to output a sensor signal in response to a detected amount, property, or condition of an externally received stimulus, the one or more At least a part of the conductive element is made of a conductive material formed of a first portion made of an ELR material and a second portion made of a material to be changed and bonded to the ELR material of the first layer. Feature system.

Chapter 12 Actuators Made of ELR Materials Refer to Figures 1-36 and Figures 37-M through 50-M for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Various types of actuators using very low resistance (ELR) materials are described herein. In the types of actuators described below, an actuator that includes at least one transducer and at least one conductor (such as input and / or output leads or terminals) is formed of a modified ELR material. For other types of actuators, membranes,
Tape, foil, wires, nanowires, traces, other conductors are formed on or placed on the substrate. Here, membranes, tapes, foils, wires, nanowires, traces, and other conductors use modified ELR materials. Other types of actuators are constructed using ELR material in which certain components of the actuator or transducer itself are modified.

The use of ELR material in the actuator is described in detail below. In general, many actuator configurations are possible and the design considerations for the designer are the modified ELR
To realize an actuator formed of material or connected to a modified ELR material. Indeed, the principles governing the design of conventional actuators can also be applied to produce actuators using the modified ELR materials described herein. Thus, although some actuator shapes are shown and described herein, many others are of course possible. The description herein also emphasizes how certain actuator systems can use specific components formed from modified ELR materials, but these of modified ELR components The examples are illustrative and not intended to be exhaustive. Those skilled in the art, who supply various examples of this disclosure,
It would be possible to identify other components in the same or similar actuator system formed from modified ELR material.

By using ELR material modified in and between actuator components, a near-ideal actuator that can provide exceptional efficiency can be achieved. Actuator performance when manufactured by conventional methods is usually affected by the internal resistance of the conductive lines or elements, but such lines are ELR tape, ELR film, ELR foil, ELR
Wires, ELR traces, ELR nanowires, and / or other using modified ELR materials
Such resistance is negligible when manufactured using ELR conductors. Similarly, the resistance caused by a wire or coil, such as an inductor, can be neglected by adopting various configurations of ELR materials.

In some examples, an actuator using the modified ELR material described herein is:
It can exhibit very low resistance to current flow at temperatures between the transition temperature of conventional HTS materials and room temperature. In some embodiments, an actuator using the modified ELR material described herein has a very low resistance to current flow at temperatures of 150K or higher, or other temperatures described herein. Can be shown. In these examples, the actuator can include a cooling system (not shown) that is used to cool the actuator element to the critical temperature of a particular modified ELR material. For example, a cooling system is a system that can cool at least ELR material in an actuator to the same temperature as, for example, liquid chlorofluorocarbon or other temperatures described herein. That is, the cooling system can be selected based on the type and structure of the modified ELR material used in the actuator and the application to which it is applied.

Referring to FIG. 37-M, a basic example of an actuator 3700 is shown. The actuator 3700 receives at least one transducer 37 that receives an input signal or control signal 3710.
Including 05. Actuator 3700 may also include one or more additional transducers 3715 that can receive output from previous transducers. Transducer 3705 (or last transducer 3715) generates output energy or force 3720 to move the object or generate some physical result.

The actuator can include a feedback 3725 that is fed back to the control 3710 to modulate or control the input signal to the transducer 3705. feedback
While 3725 is shown, a feedforward system may be employed in which each transducer provides subsequent transducer information regarding the output of that transducer. Each of the feedback, feedforward, or both actuator systems, for example, to transmit displacements, movements, or other variables useful for controlling the actuators. One or more sensors can be included.

In general, the actuator 3700 controls the flow (or energy) of matter, and thus the transducer 3705 is an energy controller or energy conversion controlled by a control 3710. As described herein, a number of actuators and actuator systems are possible. These include electromagnetic actuators (motors with electrical / mechanical commutators, etc.), fluid power actuators (proportional valves, switching valves, fluid power motors, etc.), electric actuators (metal hydride actuators that can be wax, etc.)
, Shape memory alloy actuators, piezoelectric actuators, magnetostrictive actuators, magnetic currents / magnetic fluids, and actuators using microactuators.

Before describing the details of the actuator system, some applications for deploying the actuator system will be described. FIG. 38-M illustrates an example of an apparatus or system 3750 that uses an actuator 3700. System 3750 receives (or transmits) signal 3760 via a port or other input / output component. Actuator 3700
, Logic and / or analog circuit 3765, power supply 3775, and / or input / output (I / O
) Component 3770 can be included. Either can be contained within the housing 3755 or aggregated as a unit. The system 3750 can also include one or more additional actuators 3780.

System 3750 can take many forms. In one example, the device is a laptop, tablet or other portable electronic device with a hard disk drive. In this example, the power supply 3775 is a battery, and the actuator system 3700 can form part of a read / write head motor or spindle motor circuit of a disk drive. Logic circuit 37
65 includes a processor and memory, and the I / O 3770 can include a keyboard or keypad, pointing device, display device, microphone, speaker, button, accelerometer, or other known elements. Many other well-known components in this example of a portable electronic device can of course be used, but they are not shown because they are readily understood by those skilled in the art.

In another example, system 3750 is a cell phone / receiver / transmitter / transmitter / receiver for a cell site. In this example, the power source 3775 can draw power from a public power company, a back generator, a battery, a solar cell, or the like. In this example, logic circuit 3765 can include an RF circuit to facilitate wireless communication. The system can include filters such as antennas, cavity filters, etc., and the actuator forms part of the tuner for the filter.

In yet another example, the system 3750 forms part of a medical or scientific device. The device receives signals from one or more sensors by logic circuit 3765, processes those signals, generates a processed output signal, and uses the actuator system 3700 to perform endoscopy, surgery Several outputs can be performed in the physical world, such as operating medical device components such as robots, cardiac pacemakers, and the like. Of course, many other examples are possible.

Actuator applications and examples are described herein, ranging from single monolithic chips to large scale applications using multiple boxes or devices such as those used in multi-actuator array systems. For example, when implemented as a microactuator on a chip, the system may include one or more actuators formed with logic circuits, and other circuits such as analog circuits, memories, input / output circuits, etc. It may contain components. In fact, many of the actuators described above can be formed on a substrate, such as a wafer substrate, using microstrip technology.
Therefore, many of the actuators can be manufactured using the thin film manufacturing technique described in this specification. All of the technologies are common to microelectromechanical system (MEMS) manufacturing and semiconductor chip manufacturing. Since many of the actuators that use modified ELR materials can be manufactured as single layer devices, the processing steps to manufacture such actuators include vapor deposition, photolithography, ion milling, contact metallization, and dicing (or It is simplified to include only its equivalent). In some examples, the chip can be fabricated using minimum scale manufacturing techniques, such as 1.3 nanometer scale technology. This manufacturing technique can leave a lot of room on the chip for additional actuators or other circuitry. Because there are fewer restrictions due to layout and distance issues,
Circuit designers can make more precise and quick chip designs.

Some of the actuators described herein may be integrated together with other components such as RF components, analog circuits, etc. on a single chip. By using an on-chip sensor, the chip may benefit from clearly improved performance. By using ELR material in the chip, the chip can enjoy greater density of circuits. For example, by using ELR material, the chip enjoys less heat loss and can move more current per line, so thinner conductive lines can be used. Since there is little or no resistance, the driver needs little current to switch signals. As the current travels less on each line, the effects of EMF on adjacent lines, on sensors, and on other circuits can be reduced. Interconnects as well as lines can be made from ELR materials. Furthermore, since the signal line loss is greatly reduced, the signal can be transmitted without amplification.

Electromagnetic actuators using modified ELR materials There are various types of electromechanical actuators that can convert electrical and / or magnetic energy into work, and often work can be converted into electrical or electromagnetic energy. One of the most common examples has various motors. One simple example is a limited range of linear motors. FIG. 39-M shows a cross-sectional view of the moving coil actuator 3900. As shown, the actuator 3900 includes a moving surface 3905 (diaphragm, speaker cone, etc.) coupled to a movable induction coil 3910. All or part of it can be formed from a modified ELR material. In one example, actuator 3900 is an audio speaker. When the coil 3910 is energized or receives a signal (such as an analog audio signal), the surface 3910 is displaced and forms an acoustic wave. The coil 3910 moves left and right (relative to the figure) in a magnetic field of a fixed magnet 3915 in response to a varying output voltage provided across a typical displacement of the coil by electromagnetic induction.

Other examples of “voice coil” motors are possible, as are other motors such as rotary motion electromechanical actuators, swing armature actuators, and other limited motion electromechanical actuators. Generally, these electromechanical actuators include at least one inductor. As described below, the inductor can include a modified ELR nanowire or tape that is configured in a core, coiled shape and at least partially surrounding the core.

Inductor with Modified ELR Material FIGS. 38B-M are schematic diagrams illustrating an inductor 3830 with modified ELR material. The inductor 3830 includes a coil 3834 and a core, and the core is an air-core coil 3832 in this example. When the coil 3834 carries current (eg, to the right of the page), a magnetic field 3836 is generated in the core 3832. The coil is formed from a film having a base layer of ELR material (eg, an unmodified ELR material) and a modifying layer formed on the base layer, or at least from a modified ELR material Partially formed. Various suitable modified ELR materials are described in detail herein.

A battery or other power source (not shown) can apply a voltage to coil 3834 and cause a current to flow in coil 3834. Formed from a modified ELR material, the coil 3834 is at a temperature required by conventional HTS materials, for example, higher than 150K, or at room temperature or ambient temperature (294K)
Or little or no resistance to current flow at temperatures higher than other temperatures described herein. The current flow in the coil creates a magnetic field in the core 3832 that can be used to store energy, transfer energy, and limit energy.

Since the inductor 3830 includes a coil 3834 formed of ELR material, the inductor can behave like an ideal inductor. Here, the coil 3834 has little or no loss due to winding resistance or series resistance normally found in inductors having conventional conductive coils (such as copper coils), regardless of the current through the coil 3834. That is, inductor 3830 can exhibit a very high quality (Q) factor (such as near infinity). The quality (Q) factor is the ratio of inductive reactance to resistance at a given frequency, ie Q =
(Inductive reactance) / resistance.

In one example, core 3832 contains no additional material and inductor 3830 is a coil without a solid core, such as a stand-alone coil (such as the coil shown in FIGS. 38B-M).
In another example, the core 3832 is formed of a non-magnetic material (not shown) such as a plastic or ceramic material. The material and shape of the core can be selected based on various factors. For example, selecting a core material that has a permeability higher than that of air generally increases the magnetic field 3836 that is generated, and thus increases the inductance of the inductor 3830. In another example, selecting a core material may depend on the desire to reduce core loss within high frequency applications. One skilled in the art will appreciate that the core is formed of many different materials and different shapes to obtain the desired and / or operational characteristics.

For example, FIGS. 38C-M show a magnetic core inductor 3840 that uses a modified ELR material. The inductor 3840 includes a coil 3842 and a magnetic core 3844 such as a core made of a ferromagnetic material. The current flow in the coil 3842 creates a magnetic field 3846 in the core 3844, which can be used to store energy, transport energy, and limit energy. The magnetic core 3844 formed of a ferromagnetic material increases the inductance of the inductor 3840 because the magnetic material's permeability in the generated magnetic field 3846 is higher than the permeability of air, and therefore due to the magnetization of the magnetic material it is in More support the formation of magnetic field 3846. For example, the magnetic core can increase the inductance by a factor of 1,000 or more.

The inductor 3840 may utilize a variety of different materials within the magnetic core 3844, e.g., ferromagnetic materials such as iron, ferrite, and / or be formed of laminated magnetic materials such as silicon steel lamination. Good. One skilled in the art will appreciate that other materials can be used depending on the needs and requirements of the inductor 3840.

Also, the magnetic core 3844 (and hence the inductor 3840) can be configured in a variety of different shapes. In some examples, the magnetic core 3844 may be a rod or a cylinder. In some cases, the magnetic core 3844 may be a donut or toroid.
In some cases, the magnetic core 3844 may allow the inductor 3840 to move to achieve variable inductance. Depending on the needs and requirements of the inductor 3840,
It will be appreciated that other shapes and configurations can be used. For example, magnetic core 38
44 can be configured to limit various drawbacks, such as eddy currents and / or hysteresis, and / or core losses due to inductance nonlinearity.

As will be appreciated, the configuration of the coil 3834 can affect certain performance characteristics such as inductance. For example, the number of turns of the coil, the cross-sectional area of the coil, the length of the coil, etc. may affect the inductance of the inductor. As shown in the example, the inductor 3830 can be used in various ways to reduce certain undesirable effects (skin effects, proximity effects, parasitic capacitances) in order to achieve certain performance characteristics (inductance values, etc.). You may comprise by the method.

In some examples, the coil 3834 can include multiple turns parallel to each other. In some examples, the coil can include several turns at different angles. Thus, the coil 3834 can be formed in a variety of different configurations. For example, a honeycomb or basket weave pattern that is continuously wound in a cross shape at various angles to each other, a spider web pattern composed of flat spiral coils spaced from each other, and various strands are insulated from each other It can be formed with litz wire.

The thin film inductor can use the ELR material described in this specification. Figure 38D-M
FIG. 9 is a schematic diagram illustrating an inductor 3850 using thin film components formed from modified ELR materials. The inductor 3850 includes a coil 3852 formed on a substrate 3854 (printed circuit board, IC mounting board, etc.), and an optional magnetic core 3856. The modified ELR material coil 3852 deposited on the substrate 3854 can be formed in various configurations and / or patterns depending on the needs of the device or system using the inductor. Further, the optional magnetic core 3856 may be deposited on the substrate 3854 as shown, or may be a plate core (not shown) located above and / or below the coil 3852.

Capacitive displacement actuators using modified ELR materials In addition to inductors, capacitors such as those used in actuators or related circuitry can be formed using the modified ELR materials described herein. Certainly, some of the same principles used in inductors can be applied in capacitors as well. The electrostatic force acting between two charges is inversely proportional to the distance between the charges, and the force can be ignored at a large scale, but the force can be used at a smaller scale as described later. Simple actuators using electrostatic forces can include a movable plate or beam that can be drawn towards the parallel electrodes when a voltage is applied between them. The movable plate or electrode
It can be suspended by a mechanical spring and can be a microfabricated beam. When a voltage is applied between the electrodes, the opposite charges on each plate attract each other.

Referring to FIG. 41-M, an example of a simple parallel plate capacitor 4100 is shown. In this example,
The capacitor includes an input terminal 4102, an output terminal, and 4104 connected to conductive plates or regions 4106, 4108. The conductive plates / areas are separated by a dielectric 4110 at least partially filled distance. The dielectric may be air or other known dielectrics used in capacitors such as insulators, electrolytes, other materials or other compounds.

Plates / regions 4106 and 4108 can use modified ELR materials. Alternatively or additionally, the input terminal 4102 and the output terminal 4104 can use modified ELR materials. Although a simple parallel plate capacitor is shown, any form of capacitor can be used formed on a semiconductor chip.

In some examples, the actuator 3700 comprises a capacitive displacement actuator comprising at least a capacitive plate or capacitive structure formed from nanowires, wires, tapes, thin films, foils, traces or other forms of modified ELR material. Can be included. For example, the two-plate monopole actuator 4200 shown in FIGS. 42A-M has a fixed reference plate 4205 that is separated from the movable plate 4210 by a dielectric (eg, air). As shown in FIGS. 42B-M and 42C-M, the two-plate monopole actuator can be implemented using MEMS technology. For example, the movable sensing plate 4210 can be moved with respect to a micromachined reference plate 4205 having a hard suspension 4225, a flexible suspension 4220.
May be micromachined to be supported by

The exemplary configurations of capacitive displacement actuators shown in FIGS. 42C-M to 42A-M are not intended to be all-inclusive and vary to displace one or more capacitive plates or elements. Any configuration of capacitive plates or elements that are operated using the selected voltage input can be used. For example, other capacitive elements having a plate shape (eg, cylinder) can be used. In either configuration, one or more of the capacitive plates or elements (or other actuator elements) can be formed from fully or partially modified ELR material.

Piezoelectric / piezomagnetic / magnetostrictive actuators using modified ELR materials Piezoelectric actuators use certain materials such as quartz that expand or contract in the presence of an electric field (similar properties convert mechanical energy to magnetic energy Applied to piezoelectric actuators, magnetic actuators, and "piezomagnetic" actuators.) Piezoelectric actuators can include displacement amplifiers that use structures that increase or amplify small displacements of the piezoelectric actuators, thereby creating greater movement. Applications of such actuators can include underwater sonar systems, dynamic vibration absorbers, diesel fuel injectors, laser gyroscopes, highly precise actuators that are position controlled, ultrasonic motors, parasitoid motors, and the like. These devices can convert mechanical energy to electrical energy, or magnetic energy useful in sound and vibration sensors (such as geophones) to energy harvesting if efficient enough. .

A basic example of the piezoelectric actuator 4300 is shown in FIG. 43-M. Piezoelectric actuator 4300 includes an input line 4305 and an output line 4310 coupled to input electrode 4315 and output electrode 4320. The lines and electrodes can be composed of or include modified ELR materials as described herein. The electrode is sandwiched between 4325 sheets of piezoelectric material. Piezoelectric material 4325 includes quartz, lithium tantalate, lithium niobate, gallium arsenide, silicon carbide, langasite, zinc oxide, aluminum nitride, lead,
It can be made from zirconate titanate, polyvinylidene fluoride, or other materials. Quartz is often preferred. This is because the designer can select the temperature dependence of the material based on the cut angle of quartz. Although shown as a disk in FIG. 43-M, other configurations such as plates are of course possible.

Actuator 4300 does not provide much displacement or movement. Accordingly, another piezoelectric actuator 4400 shown in FIG. 44-M includes a portion of piezoelectric material 4405 formed with a plurality of layers of electrodes 4402 coupled to terminals 4404. Opposing electrodes 4406 are formed between the electrodes 4402 and are also connected to an opposite terminal (not shown). By sending a signal to the terminals, and thus the electrodes, the layer of piezoelectric material sandwiched between the electrodes expands, thereby generating a force on the actuator 4400.

A magnetostrictive actuator uses a specific material such as a magnetoferromagnetic crystal, whereby its shape changes with increasing magnetic field strength. The magnetostrictive actuator is Terphenol-D (TD0.
3 Use materials such as DY0.7). A magnetostrictive actuator can include a permanent magnet in the actuator to pre-magnetize the actuator. Using modified ELR materials, such as induction coils that generate a magnetic field for the actuator, can provide improved performance. As an example, the inductor 3840 of FIGS. 38C-M can include a magnetostrictive rod axially through the center of the inductor to form a magnetostrictive actuator.

Microactuators / MEMS using modified ELR materials
Microactuators such as MEMS include three-dimensional mechanical structures with very small dimensions manufactured using lithographic procedures, anisotropic etching, and other similar techniques often found in semiconductor manufacturing. Therefore, with microactuator
MEMS allows complex functions to be performed through one or more components such as processing units, sensors, transducers, and / or other circuits and systems,
It is a very small mechanical device driven by electric power (small dimensions inevitably result in a reduction in operating force). Examples of applications using such microactuators include microdrives or electromagnetic micromotors, positioning and gripping systems, microptics, microchoppers, microfluids such as microvalves and micropumps. The use of MEMS electronics is common in modern technology. For example, MEMS airbags with environmental sensors can be found in communication devices, inkjet printers, display devices, cell phones, geophones, and the like.

Examples of some electrostatic or capacitive actuators such as MEMS are described above. Another example is shown as micromirror 4500 in FIG. 45-M. The micromirror includes a reflector or plate 4505 connected to a support structure 4510 by a beam or axis 4515. The electrode 4520 formed under the plate 4505 on the substrate can be energized to tilt the plate in either direction of the electrode. Micromirror arrays include hundreds or thousands of these micromirrors in an array that has an array of control lines to control or rotate individual mirrors. As a result, incident light can be reflected in different directions at the pixel level where each pixel represents a separate micromirror. In other words, individual micromirrors can be “on” or “off.” Such a micromirror array can be used to project the intensity of incident light in a window in a structure, such as between two panes of insulating glass, for image projection. Can be used to control the direction.

The microactuator uses an electrostatic actuator so that the parallel electrodes can exert an attractive electrostatic force therebetween to move one relative to the fixed part, as described above. An example of such a device is the comb drive 4600 shown in FIG. 46-M. As shown, the fixed comb 4605 includes a plurality of finger electrodes that include recesses between the lattices to expand the fingers of the movable comb finger 4610. Fixed comb 4605 and movable comb 4610 have corresponding electrodes 4625, 46
30 or coupled to corresponding electrodes 4625, 4630. Mechanical spring 4615 is movable comb 4610
The movable comb 4610 can be moved while ensuring the above. The fingers of the fixed comb and the movable comb do not touch. Comb drive 4600 is used when a voltage higher than the threshold voltage is applied to the actuator.
Overcome the limitations of parallel plate capacitive drives and actuators that avoid "pull-up" instability.

The modified ELR material can be used in other parts such as wiring conductors, signal lines, microactuators. Figure 47-M shows a very low resistance interconnect (ELRI) 4710 modified to connect the MEMS 4720 to other circuits or components 4730 on an IC mounting board or system-in-package (SIP) 4740 Indicates use. For example, ELRI 4710 uses MEMS 4720 as an analog and / or digital circuit such as a microprocessor, microcomputer, microcontroller, DSP, system on chip (SoC), antenna, second MEMS, ASIC, ASSP,
It can be used to connect to FPGAs and / or other circuits, components or devices 4730. The technology used in these examples is based on MEMS 472 in other circuits and components 4730.
Can be used to connect 0. Furthermore, these techniques can be substantially realized on a semiconductor IC mounting substrate including the same or various types of MEMS 4720. For example, for SiP, the ELRI 4710 is related to the physical location on the substrate by having little resistance to set up the MEMS device on the substrate to connect to other passive components such as ICs and antennas. Can be used with these elements being able to run as if directly connected to each node (the term "MEMS" is frequently used, but various microactuators can be used Intended to include.)

The MEMS can include one or more components. Examples include, but are not limited to, high frequency circuits, variable transmission lines, waveguide resonators, ELR components, passive components, ELR passive components, quasi-optical components, variable inductors, variable capacitors, and / or electromechanical filters. It is not something. As another example, one or more components can include sensors that detect environmental parameters. Examples of sensor types that can be used are:
Pressure sensor, temperature sensor, thermal radiation sensor, microwave sensor, terahertz sensor, optical sensor (including infrared, ultraviolet, X-ray, cosmic ray), fluid motion sensor (including gas and liquid), vibration sensor, accelerometer, Including but not limited to humidity sensors, electric field sensors, magnetic field sensors, and / or acoustic sensors.

Overall, an IC mounting substrate can have one or more conductive paths. One or more conductive paths are multi-level interconnects that are isolated between them except for specific connection vias designed to connect to each of the continuous conductive paths. Use that level to arrange density and connectivity. One or more conductive paths from an ELRI having a first layer of ELR material (an unmodified ELR material) and a second layer of a modifying material coupled to the first layer of ELR material Become. A network of components can be connected to the MEMS via one or more conductive paths. Alternatively or additionally, MEMS is
A first layer of ELR material; a second layer of modifying material coupled to the ELR material of the first layer;
Can comprise one or more internal paths and / or components. One or more components can be electrical components and / or mechanical components. For example, in at least one embodiment, the one or more components include: a set of ELRI passive components, a variable transmission line, a waveguide resonator, a quasi-optical component, a variable inductor, a variable capacitor, an electromechanical filter, a sensor, Switches, actuators, structures, and / or other components can be included.

Many advantages can be obtained by using ELRI to connect MEMS circuits to analog / digital circuits and / or other circuits / other components on an IC or SIP. For example, one or more conductive paths can have near zero parasitic resistance, thereby allowing MEMS to be connected to a circuit or set of components independently at a location on the package. The conducting path has negligible resistance and can have a wavefront delay time constant close to zero. In this way, the electrical interaction signal and the drive current delay are greatly reduced. ELRI will also allow MEMS and circuits and components to be integrated on the IC with optimized locations and minimal degradation due to parasitic resistance. As another example, ELRI allows MEMS and analog circuits to be designed somewhat independently. This independent design can facilitate prompt development. This also means
By embedding pre-designed MEMS, users can use MEMS IP and analog circuit IP more freely without special MEMS design expertise. ELRI is MEMS
Allows more independence between the IC and analog circuit design, so it can be integrated in a larger amount and diversity on the IC, and the MEMS IC has grown in new products, and this growth has been improved It will provide a learning curve for product design and manufacture.

When this ELRI technology is used in IC products, other ELRI technologies can be used synergistically. For example, ELRI for connecting multiple MEMS circuits, ELR for connecting MEMS to a mounting board or other circuits on SIP, 3D interconnection on IC (Connecting IC to mounting board on package) Includes MEMS ELRI technologies such as ELRI and ELRI for power distribution on the mounting board. All of them can further improve the development of all ELRI technologies and improve product performance.

ELRI, actuators and other components are based on the type of material, the application of the modified ELR material, the size of the component using the modified ELR material, the operational requirements of the equipment or machine using the modified ELR material, etc. Can be manufactured. Thus, materials used as substrate layers for modified ELR materials in design and manufacturing, and / or
The material used as the modifying layer of the modified ELR material can be selected based on various considerations and desired operational and / or manufacturing characteristics. Although various suitable geometries and configurations for layout and / or modified ELR material placement are described herein, numerous other shapes are possible. These other shapes include material thickness, different layers, modified ELR materials with multiple adjacent modifying layers, use of multiple modified ELR materials modified by a single modifying layer In addition to layer, other 3D structure differences, it includes configurations or layouts for different patterns, lengths and / or widths. Thus, appropriately modified ELR materials can be used depending on the desired application and / or properties.

In one example using an IC, the first operation deposits a deposition layer of a first very low resistance (ELR) material on an IC substrate or SIP dielectric insulator. The first layer is, for example, YBCO or BSCCO
Can be configured. A second layer of modifying material is deposited on the first layer of ELR material to form a single level ELR interconnect. The second layer can include, for example, chromium or other modifying materials described herein. The first or base layer used as the modifying layer and / or the material used as the material is selected based on various considerations, desired operating characteristics and / or manufacturing characteristics. For example, chemical resistance, cost, performance goals, available equipment, available materials, and / or other considerations and properties. Processing operations (etching or other processing) such as photolithography and material removal then form ELRI to form various components, conductive paths and / or interconnects. For example, in some embodiments, a MEMS ELRI, an ELRI passive component, an ELRI RF antenna, a power distribution system, and
A signal bus having one or more conductive paths through which signals can be routed can be formed.

The process can also include selecting a high dielectric constant substrate to provide a specific signal response. As described above, the substrate on which the actuator or other circuit is formed can affect the output. The following substrates deposited in bulk or on another substrate can be used. For example, amorphous or crystalline quartz, sapphire, aluminum oxide, LaAlO ₃ , LaGaO ₃ , SrTiO ₂ , ZrO ₂ , MgO, NdCaAIO ₄ , LaSrAIO ₄ , CaYAIO ₄ , YAIO ₃ , N
dGaO ₃ , SrLaAIO ₄ , CaNdAIO ₄ , LaSrGaO ₄ , and YbFeO ₃ can be used. The board is modified E
It can be selected to be compatible and inert for placing good quality paths of LR material and can have favorable characteristics for use in filters formed on substrates including planar filters.

Electrochemical actuators using modified ELR materials Electrochemical actuators supply a small voltage to the electrode that catalyzes the gas, for example, similar to a fuel cell using electrochemical oxygen pump transfer, and then Based on the principle of increasing the pressure in a closed cell. FIG. 48-M shows an example of an electrochemical actuator 4800 that includes a shell or housing 4805 that holds one or more coaxially aligned electrochemical actuators or fuel cells 4810. Although one fuel cell 4810 is shown, the other three are shown as dashed lines, all stacked within the housing 4805.

Each fuel cell 4810 includes a first or lower electrode 4815 and a second or upper electrode 4820. The upper and lower electrodes define an intermediate chamber that holds gas 4825. Each of the fuel cells is formed as a disk, square, or other structure and can move freely within the housing 4805. Insulator 4830 is formed as a ring or other structure and separates upper electrode 4820 and lower electrode 4830 while holding gas 4825.

The housing 4805 is formed of a conductive material such as metal. When a voltage is applied to the housing 4805 and the electrode 4840, the voltage obtained between the upper electrode 4820 and the lower electrode 4815 is the gas 48.
Activate 25. In response, the gas expands and generates an upward force acting on the plunger or piston 4850. By using more than one fuel cell 4810, greater displacement can occur.

Other electrochemical actuators are possible. For example, wax is used instead of gas. Since the wax has a large volume temperature dependence, its expansion can move the piston greatly. Such wax is placed in a rigid container in which a piston (or a piston enclosed in an elastomer) is placed, and the container can be heated to expand the wax and compress or push out the piston. .

The modified ELR material can be used in the interconnection of electrochemical actuators in addition to the connections between these actuator components. For example, the modified ELR
The material can be used for the upper electrode 4815 and the lower electrode 4820 as well as the housing 4805 and the electrode 4840. The modified ELR material can be formed to wrap around or within the housing. Other configurations or shapes are of course possible.

Shape memory actuators using modified ELR materials Another example is the use of thermal motion that, for example, displaces or expands bimetallic devices in response to temperature changes. Another example is a shape storage alloy actuator using a metal or ceramic that changes state and expands / contracts based on an externally applied electrical signal or temperature. Such shape memory materials include shape memory alloys that can be controlled using a magnetic field, such as nickel, titanium, copper-based alloys (eg, CuZnAI and CuAINi), Ni ₂ MnGa
Can be given.

By forming the shape memory material into a specific geometric pattern, such as a spring or coil, a small linear change in the expansion of the alloy can be conveyed to produce a large final displacement along its length. . Improved performance can be achieved by using the modified ELR material for the circuit electrode that drives the shape memory material. Shape memory material actuators can be used in drive, control and release elements for vehicles, environmental control elements, grippers and the like.

Magnetic / electrorheological fluid actuators using modified ELR materials Actuators using electrorheological fluids change viscosity in response to an electric field,
A pair of electrodes is included in a sealed container that holds the fluid so that the fluid can “set” into the plastic. Examples of suitable liquids include nonpolar base fluids that have low connectivity, no dielectric constant, and in which relatively high dielectric constant and polarizable solid particles are dispersed. Light oil is an example of a base fluid. The solid particles are, for example, silicic anhydride, aluminosilicate, metal oxide or the like. Such actuators operate in shear load, flow mode or squeeze mode, thereby providing a force that is parallel to the pair of electrodes through the pair of electrodes (both are fixed) or on the fixed electrode side. be able to. Such actuators may be used for positioning drives, shock absorbers, tactile elements, and the like.

Referring to FIG. 49-M, an example of a shock absorber or actuator 4900 including a container or container 4905 with a cap 4910 is shown. The container is a cylinder that extends into a piston 4915 having a rod 4920 that extends through the middle of the cap 4910. The container 4905 holds an electrorheological fluid 4930. The U-tube or channel 4935 can move above and below the fluid 4930, piston 4915. An external electric signal generated by an electric field extending between the electrodes of the pair of electrodes 4940 and 4945 is received. The electric field affects the viscosity of the fluid 4930, thereby changing the response of the piston 4915 within the container 4905. Not shown, but fluid
A valve can be placed in duct 4935 to limit the flow of 4932 and the volume above and below piston 4915.

The modified ELR material is applied to the electrodes 4940, 4945, thereby efficiently generating an electric field therebetween. Although one shape is shown, other configurations are possible. In addition, the same principles applied to electrorheological fluids are equally applicable to ferrofluids that use ferro / ferromagnetic particles such as carbonyl iron alloys in low permeation base fluids that contain stabilizers to prevent particles from solidification. The Applications include brakes, clutches, motor mounts, etc.
Suitable examples and applications of actuators containing modified ELR materials

As mentioned above, the modified ELR material has a temperature dependent performance. As a result, actuators using the modified ELR materials described herein are also temperature dependent as well. The temperature change affects the magnetic field penetration into the strip conductor as described above. Such changes in the modified ELR material can be modeled based on the response behavior of the modified ELR material to temperature, as described herein, or can be derived empirically. it can. Note that the wiring resistance can be ignored by using the changed ELR material, but the resistance can be adjusted based on the temperature as shown in the temperature graph shown in this specification. Thus, the actuator design can be adjusted to compensate for temperature, or the actuator output can be adjusted by changing the temperature.

Referring to FIG. 50-M, a system 5000 is shown that includes a circuit 5010 and a logic circuit 5020 coupled to a temperature control circuit 5015 (although various interconnected blocks are shown in FIG. 50-M). ,
Fewer or more connections are possible). The circuit 5010 uses one or more actuators formed from ELR materials that have been modified at least in part as described herein. The logic circuit controls the temperature control circuit, which in turn controls a cooler / refrigerator such as a cryogenic liquid or gas cooler that cools the circuit 5010. Thus, to increase the sensitivity and response of the system 5000, the logic circuit 5020 sends a signal to the temperature control circuit 5015 to reduce the temperature of the circuit 5010. As a result, the circuit 5010 using the modified ELR material is changed to the modified ELR.
The material causes the conductivity to increase, thereby increasing the sensitivity and response of the circuit.

While specific actuators have been generally described as described above, many other actuators are possible. For example, the modified ELR material can be incorporated into an actuator to tune a circuit (eg, a filter). Although individual actuators are shown, the actuators can be coupled together to form a more complex actuator system or array. As with the other categories of actuators described herein, many configurations of actuator arrays are possible, and it is possible for designers to realize multi-actuator systems formed from ELR materials that are at least partially modified. It is a design matter. The modified ELR materials described herein can be used in complex actuator systems that include two or more combinations of the actuators and principles described herein, even if the combinations are not explicitly stated. Can be used. In fact, such complex actuator systems do not simply use similar actuators, but 2
Two or more different actuators can be used. Such actuator systems or arrays are homogeneous actuators, all made of modified ELR materials, heterogeneous mixed ones made of different types of actuators, some actuators made of non-ELR materials It can include combinations of different actuators, combinations of different materials. Thus, a complex actuator system or array consists of two or more homogeneous actuators primarily formed from modified ELR materials
Two or more actuators may be used, two or more dissimilar actuators may be formed primarily from modified ELR material, and / or two or more homogeneous / heterogeneous actuators may be It may be formed from both modified ELR materials.

Although specific examples of actuators using components that are formed in part or in whole from modified ELR materials are described herein, those skilled in the art will recognize that the configuration of the actuator is substantially as described above. It will be appreciated that components formed from at least partially modified ELR materials, such as Various actuators and actuator systems use conductive elements, other elements, and some of those described above. (It is stated that the modified ELR material can be used with conductive elements in the circuit, but the modified ELR material promotes the propagation of energy and signals along its length or region. " Depending on the definition of “conductivity”, it may be more appropriate.) As a result, an exhaustive list of all possible actuators and actuator systems that can use components formed from modified ELR materials It is impossible to do.

Although some suitable shapes are described and shown herein for some actuators, many other shapes are possible. These other shapes include not only different patterns, configurations or layouts for length and / or width, but also material thickness differences, the use of different layers, and other three-dimensional structures. We can use modified ELR materials in systems associated with virtually all actuators known in the art, and the modified ELR materials, actuators, and principles of this application. Those skilled in the art who have been provided with various examples will realize other actuators having one or more components formed entirely or partly from modified ELR materials without undue experimentation I believe you can.

In some embodiments, an actuator that includes a modified ELR material can be described as follows.

An actuator comprising: at least one transducer configured to convert received electrical energy into mechanical energy; and at least one conductive input line coupled to the transducer; A conductive input line is configured to input a signal to the at least one transducer to operate the transducer, and at least a portion of the transducer or the conductive line is modified to be very low The modified ELR portion is formed of a resistance (ELR) portion, and the modified ELR portion is formed of a first layer made of ELR material and a second layer made of the modifying material bonded to the ELR material of the first layer. An actuator characterized by being made.

A method for manufacturing an actuator element, the first conductive path and the second conductive path being spaced apart, and the step of using a very low resistance (ELR) material on the piezoelectric or piezoelectric substrate The first conductive portion and the second conductive portion that are spaced apart from each other form a terminal of a piezoelectric actuator or a piezoelectric actuator, and the ELR material is a first made of ELR material. A manufacturing method comprising: forming a portion; and a second portion made of a modifying material bonded to the ELR material of the first portion.

An actuator, formed on the substrate, at least one microscale or nanoscale transducer formed on the substrate and configured to convert received mechanical energy into electrical energy; and At least one conductive input line coupled to a transducer, wherein the conductive input line is configured to input a signal to the at least one transducer to operate the transducer; At least one transducer or at least a portion of the at least one conductive input line is formed with a modified very low resistance (ELR) portion, the modified ELR portion comprising a first layer of ELR material and ,
An actuator comprising: a second layer of a material to be modified that is bonded to the ELR material of the first layer.

An actuator system, wherein the actuator system includes a plurality of actuator elements, each actuator element including a transducer and one or more conductive paths, wherein the one or more conductive paths are , Including a shape for providing an input signal to the transducer, wherein at least a portion of the transducer and / or the one or more conductive paths is a first portion made of ELR material; A first portion formed of a first portion formed from a second portion of a modifying material that couples to the ELR material of the first portion, wherein the plurality of actuator elements provide a combined actuator function Actuator system.

A system comprising: a logic circuit or an analog circuit; a unit as an antenna; and at least one actuator element connected between the logic circuit or the analog circuit, the actuator element Has one or more electromechanical transducers and one or more conductive paths, wherein one or more of the actuators and / or the conductive paths are in response to received control signals. Including one or more actuators and / or at least a portion of the conductive path comprising an ELR material.
A system comprising a conductive material formed from a portion and a second portion of a modifying material bonded to the ELR material of the first portion.

Chapter 13 Filters Formed from ELR Materials Refer to FIGS. 1-36 and FIGS. 37A-N to 50-N for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Various types of filters using very low resistance (ELR) materials are described in this chapter. In the filter types described below, the filter includes a substrate on which a film, tape, foil,
Wires, nanowires, traces and other conductors are formed or arranged. Where substrates, membranes, tapes, foils, wires, nanowires, traces and other conductors are modified EL
Use R. Other types of filters are configured that use modified ELR materials for specific components of the filter. In some examples, the modified ELR material is the type of material, the application of the modified ELR material, the size of the component / element using the modified ELR material, the operation of the device or machine using the modified ELR material It can be manufactured based on requirements. Thus, materials used as a modified ELR material base layer (unmodified ELR material) and / or modified ELR in filter design and manufacturing
The material used as the changing layer of material can be selected based on various considerations and desired operational and / or manufacturing characteristics. The modified ELR material provides a very low resistance to current at temperatures higher than the normal temperatures associated with existing high temperature superconductivity (HTS), thereby increasing the operating characteristics of the filter at higher temperatures Improve.

The application of the modified ELR material in the filter is described in detail below. In general, many configurations of filters are possible, and it is a filter designer's design consideration to achieve filters formed from modified ELR materials. Indeed, the principles governing conventional filter design can also be applied to produce filters using the modified ELR materials described herein. Thus, although several filter shapes are illustrated and described herein, many other shapes are of course possible. The description herein also emphasizes how specific filter systems can use specific components formed from modified ELR materials, but these of modified ELR components The examples are illustrative and not intended to be exhaustive. Those skilled in the art, supplied with various examples of the present disclosure, will be able to identify other components within the same or similar filter system formed from modified ELR materials.

FIGS. 37A-N are schematic diagrams illustrating a filter system 3700 that can use modified ELR materials. An input terminal or transmission line 3705 receives the input signal and provides it to the filter 3710. Filter 3710 can take any of the many forms described herein. The filter system 3700 can include one or more filters, with the second filter displayed as an optional filter 3715. Filter signal is one or more filters 3710
, 3715, and then output as a filtered signal to a line or terminal 3720.

Before describing the details of the filter system, some uses of the filter system will be described. FIGS. 37B-N are diagrams illustrating an example of an apparatus or system 3750 that uses a filter system 3700. FIG. Device 3750 receives signal 376 via port or other input / output component.
0 is received and transmitted. The apparatus 3750 can include a filter system 3700, logic and / or analog circuitry 3765, a power supply 3775, and input / output (I / O) components 3770. Any or all of them can be contained within the housing 3755 or integrated as a unit. In the example of FIGS. 37B-N, device 3750 can include an antenna 3780.

The device 3750 can take any of a number of forms. In one example, the device is a mobile phone, smart phone, laptop, tablet or other portable electronic device. According to this example, the power source 3775 may be a battery and the filter system 3700 may form part of an RF circuit that can be formed on one or more semiconductor chips. I / O component 3770 refers to a device, display device, microphone, speaker, or other known element and can include a keyboard or keypad, and logic circuit 3765 can include a processor and memory. Many other well-known components may be used other than the portable electronic device embodiment, but they are not shown because they are readily understood by those skilled in the art.

In another example, device 3750 is a cell site or base station mobile phone receiver / transmitter / transmitter. In this example, the power source 3775 may be line power, such as utility utility, generator backup, battery, solar cell. In this example, logic circuit 3765 can include an RF circuit configuration to facilitate wireless communication. The antenna 3780 can include one or more mobile phone antennas.

In yet another example, antenna 3780 is omitted and device 3750 forms part of a medical or scientific device. The device can receive a signal, such as from one or more sensors, and use a filter system 3700 to filter the signal and generate an output signal that is processed by logic circuit 3765. Of course, many other examples can be used. The applications and examples of the filters described herein include multiple boxes or devices such as those used in active antenna array systems distributed from a single monolithic chip, such as an RFID chip, eg, to a mobile phone site. It is in the range to the large-scale use to be used. When implemented as an RFID chip, the device includes an antenna 3780 coupled to RF circuitry, logic circuitry, and memory. The device can be manufactured on a single chip. The antenna is a monolithic single chip (
Alternatively, it can be formed as a microstrip antenna formed on a substrate such as a label flexible substrate or a printed circuit board with the remaining components integrally integrated on a plurality of interconnected chips).

In an early basic example, the filter 3710 of the filter system 3700 is the L shown in FIGS. 38A-N.
A simple resonator structure such as filter 3800 formed as a C tank circuit can be included. As shown, filter 3800 receives the input signal via lines 3805, 3810. The filter includes an inductor 3815 and a capacitor 3820 coupled in parallel. Two or more of such configurations may be provided with inductors and / or capacitors coupled in series. In some examples, the filter 3800 can also include one or more resistors. Of course, the filter design is very specific to the application for which the filter is to be used, and the large number used in the filter, depending on the desired frequency, desired frequency range and other factors in this particular application. The components are driven. Therefore, there is no need to describe it here because the specific numbers of components, applications and devices will vary.

In general, a bundled element filter as shown in FIGS. 38A-N can include at least two elements coupled in series or in parallel, with at least one of the elements being an inductor or a capacitor. The inductor includes a core and a modified ELR material that at least partially surrounds the core and is configured in a coil. The capacitor includes at least two conductive regions / elements, at least one of the regions / elements is formed of a modified ELR material. A dielectric separates the two conductive regions / elements. Overall, at least some of the known or conventional filter components such as inductors and capacitors may be formed using the modified ELR materials described herein (including planar filters, described below). it can.

ELR changed in or between components in the filter section
By using the material, an ideal close quality factor of the resonator filter 3800 can be obtained and exceptional selectivity can be provided as a filter for wireless applications (
Selectivity generally refers to a measure of the performance of a radio receiver's ability to remove (ie, attenuate) unwanted frequencies for a desired frequency or frequency band / channel). Filter performance is usually affected by internal resistance to conductive lines 3805, 3810 when manufactured by conventional methods, but when the conductive lines are manufactured using modified ELR material, the internal resistance is Can be ignored. Similarly, the resistance caused by the coil in the inductor can be neglected by using a modified ELR material.

In some examples, filters using ELR materials modified herein can exhibit very low resistance to current flow at temperatures between the transition temperature of conventional superconducting materials and room temperature. In some examples, filters described herein that use modified ELR materials can exhibit very low resistance to current flow at temperatures of 150K or higher described herein. . In various examples, the filter can include a suitable cooling system (not shown) that is used to cool the filter element to the critical temperature of a particular modified ELR material. The cooling system may be a system that can cool at least the ELR material in the filter to a temperature similar to liquid chlorofluorocarbon or to other temperatures described herein. That is, the cooling system can be selected based on the type and structure of the modified ELR material utilized in the filter. Another consideration for selecting a cooling system is the amount of power consumed by the system.

Inductor with Modified ELR Material FIG. 38B-N shows an inductor 383 with a modified ELR film formed from the modified ELR material.
FIG. Inductor 3830 includes a core 3832 and a coil 3834 in this example,
The coil 3834 is an air-core coil 3834. When the coil 3834 carries current (eg, toward the right side of the page), a magnetic field 3836 is generated in the core 3832. Coil modified ELR
At least a part is formed from the film. Various appropriately modified ELR membranes are described in detail herein.

A battery or other power source (not shown) can apply a voltage to the modified ELR coil 3834 so that current flows through the coil 3834. Formed with a modified ELR film, coil 3834 has little or no current flow against current flow at temperatures above 150K or higher than those used in conventional HTS materials, such as room temperature. Does not show resistance. The current in the coil or the like generates a magnetic field in the core 3832 that can be used to store energy, transfer energy, or limit energy.

Inductor 3830 includes a coil 3834 formed using a modified ELR material, and can therefore act like an ideal inductor. Coil 3834 exhibits little or no loss due to winding or series resistance commonly found in inductors with conventional conductive coils (such as copper coils), despite the current flowing through coil 3834.
That is, inductor 3830 can exhibit a very high quality (Q) factor (close to infinity). The quality (Q) factor is Q = (inductive reactance) / resistance, the ratio of inductive reactance to resistance at a given frequency.

In one example, core 3832 does not include additional material and inductor 3830 is a physical coreless coil such as a stand-alone coil (the coil shown in FIGS. 38B-N). In another example, the core 3832 is formed of a non-magnetic material (not shown) such as a plastic or ceramic material. The material and shape of the core can be selected based on various factors. For example,
Choosing a core material with a permeability higher than that of air will generally result in a generated magnetic field 38
36 is increased, thus increasing the inductance of inductor 3830. In another example, the choice of core material may depend on the desire to reduce core loss in high frequency applications. One skilled in the art will appreciate that the core may be formed with a different number of materials and a different number of shapes to obtain the desired and / or operational characteristics.

For example, FIGS. 38C-N show a magnetic core inductor 3840 that uses a modified ELR film. The inductor 3840 includes, for example, a coil 3842 and a magnetic core 3844 formed from a ferromagnetic material or a ferromagnetic material. The current in the coil 3842 generates a magnetic field 3846 in the core 3844 that can be used to store energy, transfer energy, and limit energy. The magnetic core 3844 formed of a ferromagnet or a ferromagnet has a higher magnetic permeability in the generated magnetic field 3846 than the permeability of air, and thus the formation of the magnetic field 3846 by the magnetization of the magnetic material is more favorable. Support and increase the inductance of inductor 3840. For example, the magnetic core
Inductance can be increased by a factor of 1,000 or more.

The inductor 3840 may use a variety of different materials, such as ferromagnetic materials such as iron, ferrite, etc. within the magnetic core 3844 and / or be formed of laminated magnetic materials such as silicon steel plates. Those skilled in the art will appreciate that other materials can be used depending on the needs and requirements of the inductor 3840.

Also, the magnetic core 3844 (and hence the inductor 3840) can be configured in a variety of different shapes. In some examples, the magnetic core 3844 may be a rod or a cylinder. In some cases, the magnetic core 3844 may be a donut or toroid.
In some cases, the magnetic core 3844 may be movable and the inductor 3840 may be a variable inductance. Those skilled in the art will appreciate that other shapes and configurations can be used depending on the needs and requirements of the inductor 3840. For example, the magnetic core 3844
It can be configured to limit various drawbacks such as eddy currents and / or hysteresis and / or core losses due to inductance non-linearities.

As will be appreciated, the configuration of coil 3842 may affect operating characteristics such as inductance. For example, the number of turns of the coil, the cross-sectional area of the coil, the length of the coil, etc. may affect the inductance of the inductor. Although shown in one configuration, inductor 3840 is a variety of ways to obtain certain performance characteristics (inductance values) to reduce undesirable effects (eg, skin effects, proximity effects, parasitic capacitances). Can be configured.

In some examples, the coil 3842 can include multiple turns that are parallel to each other. In some examples, the coil can include several turns with different angles from each other. Thus, the coil 3834 can be formed in a variety of different configurations. For example, a honeycomb or basket weave pattern that is continuously wound in a cross shape at various angles to each other, a spider web pattern composed of flat spiral coils spaced from each other, and various strands are insulated from each other It can be formed with litz wire.

The thin film inductor can also utilize the ELR components described herein. FIGS. 38D-N are schematic diagrams illustrating an inductor 3850 that uses a modified ELR thin film component. Inductor 3850 modified formed on board 3854 (printed circuit board etc.)
Includes ELR coil 3852 and optional magnetic core 3856. The coil 3852 comprising modified ELR material deposited or etched on the substrate 3854 can be formed in various configurations and / or patterns depending on the needs of the device or system using the inductor. Further, the optional magnetic core 3856 may be deposited or etched on the substrate 3854 as shown, or may be a plate core (not shown) disposed above and / or below the coil 3852. Good.

Capacitors including modified ELR materials In addition to inductors, capacitors can be formed using the modified ELR materials described herein. Certainly, some of the principles employed in inductors are equally applicable to capacitors. Referring to FIGS. 38E-N, an example of a simple parallel plate capacitor 3870 is shown. In this example, the capacitor includes an input terminal 3872 and an output terminal 3874 connected to a conductive plate or region 3876, 3878. The conductive plates / regions are separated by a distance, which may be at least partially filled with dielectric 3880. As will be appreciated, the dielectric may be a dielectric used in capacitors such as air, insulators, electrolytes, or other materials or other compounds.

Conductive plates / regions 3876, 3878 can use modified ELR materials. In some examples, input terminal 3872 and output terminal 3874 may use ELR material. Although a simple parallel plate capacitor is shown, any form of capacitor, such as that formed on a semiconductor chip, can be used.

Planar filter with modified ELR One type of filter that is particularly suitable for using the modified ELR material described herein is a planar filter. Planar filters are often conductive traces formed on a dielectric substrate, such as a printed circuit board, and use conductive strips or strip transmission lines, but such planar filters can be used in semiconductor manufacturing processes and other nanotechnology. It can be used to make on smaller substrates on a much smaller scale.

Figure 39-N shows an example of a simple planar filter structure, and an approximation of its collective circuit is shown in Figure 38.
It is substantially equivalent to the -N filter 3800. Input transmission line 3905 and output line 3910 are blocked by a stub 3915 connected to ground (the state of the inductor and capacitor in series between input line 3905 and output line 3910 by not connecting the stub to ground An effective series equivalent is formed). FIGS. 40A-N show another example of a planar filter 4000 having an input line 4005 and an output line 4010 coupled as open circuit lines, and FIGS. The configuration of is shown.

In a flat filter or similar distributed element filter, the filter inductance, capacitor, resistance is not localized or "collectively" in individual inductors, capacitors, resistors or other elements Instead, it is formed by inserting one or more discontinuities. Here, the discontinuous transmission line represents a reaction impedance with respect to a traveling wavefront through the transmission line. Because, if the inductance of the line is increased through the penetration of an external magnetic field, it is propagated along the superconducting transmission line,
This is because the waves can be slowed down. More importantly, normal conductors have a skin depth that is a function of frequency, and increasing the frequency reduces the skin depth. However, ELR materials generally exhibit very low losses along the transmission line, which typically eliminates the need to consider skin depth. Thus, with the modified ELR materials described herein, the skin depth can be ignored for some applications, or the skin depth can be used when designing a filter for a particular application. May be measured, used / compensated empirically as well as considered.

Stubs can be lent for use in bandpass filters, but lowpass filters alternate high and low impedance lines to accommodate series inductors and shunt capacitors when viewed in bulk element implementations. Can be used in series. 41B-N is a diagram showing a group of element approximations, while FIGS. 41A-N are
It is a figure which shows an example of a low-pass filter. Specifically, FIGS. 41A-N show input line 4105 and output line 4110, alternating series of stepped high impedance elements 4115, 4120, 4125, and low impedance to alternately form inductive and capacitive impedance elements. 6 is a diagram showing an example of a step impedance low-pass filter having elements 4130, 4135, and 4140. FIG. Any number of elements can be used, as shown in the diagram with omission. Of course, various other shapes are possible, and the filter element may be a quarter of the desired wavelength to be affected by the filter.

Similar to forming a low-pass filter, an exemplary alternating stub is shown in FIGS. 42A-N (using straight stub 4202) and FIG. 42B-N (butterfly or radial stub 4204). Shapes using butterfly stubs, clover leaf stubs, or other radial stubs may allow easier modeling for filter design. Other shapes for implementing shunt capacitors can include stubs such that the stubs are located on either side of lines 4105, 4110.

In another filter design, the input line 4105 and output line 4110 shown in FIGS.
Use capacitive gaps in the line to be coupled via 302 and gap 4304. Conductive portion 4302 acts as a resonator that may be about half the desired wavelength. Conventional capacitive gap filters of this nature are usually limited by insertion loss, resulting in low Q values. However, by using the modified ELR material described herein, the disadvantages of conventional capacitive gap filters are avoided. Of course, other shapes are possible. For example, Figure 43B-N
Shows an input line 4105 and an output line 4110 coupled via a diagonal conductive strip 4306 separated by a similar gap 4304. The angled geometry of FIGS. 43B-N can reduce the area required for the filter substrate.

Yet another example is shown in the stripline hairpin filter of FIGS. 43C-N. As shown, the filter includes a series of U-shaped conductive traces or paths 4308 arranged in a row with each path inverted 180 degrees from its adjacent path. All example omissions indicate that there are more or fewer paths or elements than those shown.

Many of the planar filters described above can of course take many other forms that incorporate some "conventional" filter concepts. Indeed, the principles governing the design of conventional filters, such as microwave filters, can also be applied to generate filters using the modified ELR materials described herein. More details on the design of some filters can be found, for example, in the application of N. Lancaster's high temperature superconductors to passive microwaves (
Cambridge University Press, 1997), eg, Chapter 5 can be found in delay line / slow wave transmission line filters with modified ELR materials.

Other filters include delay line filters or slow wave transmission line filters. The delay line filter is similarly formed as a microstrip, stripline, coplanar line, etc. and can be deposited on one or more substrates, typically a dielectric substrate. Substrate thickness (discussed below) can be packed more closely without the line coupling, thereby inserting between adjacent lines providing longer delay for a given substrate Loss and cross coupling can be controlled. The delay line using the modified ELR material described herein is a delay of up to several hundred nanoseconds for a loss of a few decibels and provides a very lossless transmission medium.

FIGS. 44A-N are diagrams illustrating an example of a single transmission line microstrip delay line filter having a coil winding 4405 coupled between an input line 4105 and an output line 4110. FIG.
Coiled winding 4405 that can generate a filtered response has portions of various impedances. An example of such a change in impedance is shown in FIGS. 44B-N with the coiled conductor 4405 having a bulge 4410 and varying thickness. Each of the stepped portions of the bulge 4410 provides filtering and provides impulse reflection.

Of course, other shapes can be used for a series of impedance steps 4410 and coils 4405. For example, the delay line filter of FIGS. 44A-N has a step on each line rather than the single line shown so that a backward propagating wave is passed through the second delay line by a series of couplers (not shown). The first and second parallel lines can be used to generate two delay line filters where the forward and backward waves are propagated through two separate lines. To add narrow band filtering, the resonant portion can be incorporated into the delay line using the stubs and gaps described herein. Overall, narrow bandpass filters can be manufactured inexpensively with short delay lines that use the modified ELR materials described herein.

44C-N show another example of a long serpentine path for coiled line 4405. FIG. Here, individual loops or hairpins 4415 are incorporated into the coiled line 4405. The shape of FIGS. 44C-N can increase the miniaturization of the filter. Further miniaturization and filtering can be used where the loop 4415 includes a staircase like step in 4410 of FIGS. 44B-N. In general, each impedance step causes reflection of the forward propagating wave, and a passband occurs when the reflection constructively interferes at a frequency where the local period of the portion of the delay line is a half wavelength.
Details are described, for example, in "Miniature Superconducting Filter" by N. Lancaster et al., Microwave Theory and Technology, IEEE Journal, Vol. 44, No. 7, 1339 (July 1996).

A filter similar to a delay line filter is a filter based on a slow wave transmission line. Such a filter has a meandering or loop path and is formed as a long transmission line with discrete inductors and effective capacitors formed along the length of the transmission line. This long transmission line can cause the line to act in the same way as a line of individual elements or a group of elements. Such a transmission line filter functions as a resonator, narrowing the gap between the ground plane on the same plane and the transmission line (for capacitance) and narrowing the transmission line (for inductance). Enables a filter design that reduces or attenuates the transmission rate of electromagnetic waves through the impedance formed by the capacitance and inductance induced along the length of the transmission line.
Flat piece element filter with modified ELR material

Filter miniaturization can be achieved by using a modified ELR material to form a flat mass filter so that the resulting device is formed and acts on the mass filter element. . Since a group of elements is by definition smaller than the wavelength at which they operate, the group of element filters can be very small at high frequencies. In particular, as a narrow line width to achieve high density, the modified ELR material described herein reduces the losses associated with normal conductors having finite resistance.

Referring to FIGS. 45A-N, an example of a band stop filter for a group of elements is
It includes an input-side conductive portion 4505 and an output-side conductive portion 4510, and a central conductor portion 4520 separated from the input-side conductive portion 4505 and the output-side conductive portion 4510 by a gap 4515. 45B-N are enlarged views of the central conductive portion 4520 showing the lower conductive portion 4525 and the upper conductive portion 4530 of the central conductive portion. The lower conductive portion 4525 includes a finger 4535 extending upward, and the upper conductive portion 4530 includes a finger 4540 extending downward. The gap is
Present between the fingers to create the resonator element.

The elements in Figures 45A-N show that while the bias current provides a resonant bandstop function,
When applied to turn on the filter in the normal state as an all-pass filter, it can act as a switch. Details can be found, for example, in Chapter 5 of the N. Lancaster book above.

A dual mode filter using a modified ELR material is also possible. Referring to FIG. 46-N, an example of a dual mode filter is shown. In general, a resonator dual mode microstrip with small perturbations splits the degenerate mode of the received signal. In the example of FIG. 46-N, input terminal 4605 and output terminal 4610 are coupled to a filter assembly that includes a pair of dual-mode resonators 4615 made as a square with chamfered or notched upper corners 4617. Conductor 4620 is a pair of resonant squares 4615 to provide a Chebyshev filter response
Connected to. Also, the addition of the second conductor 4625 provides an omitted filter response. Although a solid square with chamfered corners is shown, other shapes such as circles, rings, square rings with protruding stubs are of course possible.

Planar filters are offered for improved miniaturization at specific frequencies, but further miniaturization uses slow wave transmission lines, a bunch of element components, transmission lines packed without wandering meanders To be provided. As mentioned above, the speed of the signal can be reduced by increasing the inductance of a conductive line, such as a transmission line, without increasing the associated capacitance. Paths and fields inside lines made of ELR material increase inductance and benefit from small external inductances, for example, by using a thin layer of dielectric between the ground plane and signal lines .

Also, using a high dielectric constant substrate can reduce the speed of a given frequency signal. The substrate on which the planar filter is formed as described above affects the output of the filter.
Precise planar filters with different Q factors can be manufactured using a certain dielectric material for the substrate. Many substrates can be used. For example, the substrate can be the following substrate deposited in bulk or on another substrate. For example, amorphous or crystalline quartz, sapphire, aluminum oxide, LaAlO ₃ , LaGaO ₃ , SrTiO ₂ , ZrO ₂ , MgO, NdCaAIO ₄ , LaS
rAIO ₄ , CaYAIO ₄ , YAIO ₃ , NdGaO ₃ , SrLaAIO ₄ , CaNdAIO ₄ , LaSrGaO ₄ , and YbFeO ₃ can be used. The substrate is selected to be compatible and inert so as to place a good quality line of modified ELR material, and has favorable properties for use in, for example, a filter formed on a substrate including a planar filter. be able to.

Acoustic wave filters comprising modified ELR materials Modified ELR materials can be applied to specific substrates, such as piezoelectric substrates, to make surface acoustic wave (SAW) or bulk acoustic wave (BAW) devices. SAW and BAW devices either move along a specific substrate surface (in the case of SAW devices) or because acoustic waves move through exponential decay in a specific substrate (BAW devices) Therefore, it can operate as a filter. BAW devices transfer energy from the surface of one material to another surface through a bulk or bulk of the material. These devices can minimize the amount of energy density on the surface. SAW devices can concentrate energy on the material surface and make the SAW device more sensitive.

An example of an acoustic wave device 4700 used in a filter as a resonant circuit is shown in FIG. 47-N. Acoustic wave device 4700 is a BAW device that includes an input line 4705 and an output line 4710 coupled to an input electrode 4715 and an output electrode 4720. The lines and electrodes can be composed of the modified ELR materials described herein, or can include the modified ELR materials described herein. The electrode is sandwiched between piezoelectric materials 4725. Piezoelectric material 4725 can be made from quartz, lithium tantalate, lithium niobate, gallium arsenide, silicon carbide, langasite, zinc oxide, aluminum nitride, zirconate titanate, polyvinylidene fluoride, or other materials. Quartz is often preferred because the filter designer can select the temperature dependence of the material based on the cut angle of the quartz.

Device 4700 can be referred to as a shear mode resonator because the voltage applied between electrodes 4715, 4720 causes shear deformation of material 4725. When an electromechanical standing wave is formed,
The material resonates and the displacement is maximized on the surface of the material on which the electrode is placed. Although shown as a disk in FIG. 47-N, other configurations such as plates are of course possible. When configured as a plate, device 4700 operates as a shear horizontal acoustic plate mode sensor with a relatively thin piezoelectric substrate sandwiched between two plates, one of the two plates containing a comb transducer (described below). can do.

Another acoustic wave device is shown as surface acoustic wave device 4800 in FIG. 48-N. The device 4800 includes a pair of input lines 4805, 4810 that input a voltage to an input transducer 4815 formed on a substrate material 4820. Substrate material 4820 may be formed from any of the materials described above with respect to device 4700 material 4725. By applying a voltage to the input transducer 4815, the input transducer converts the electric field energy into the output terminal 4830, in the form of acoustic waves.
It travels in the direction of an output transducer 4840 having 4835 to convert to mechanical wave energy 4825. The output transducer then transmits the received mechanical wave energy to output terminal 4830.
And converted back to an electric field applied to 4835. Input transducer 4815 and output transducer 4840 can be formed as comb transducers that can be applied to the surface of substrate material 4820 and mated with fingers of a conductive material, such as the ELR material described herein. .

Acoustic waves are primarily distinguished by their velocity and displacement direction, and many combinations are possible depending on the material used for material 4725 or substrate material 4820 (boundary conditions also affect the propagation of acoustic waves. Effect). The sensitivity of devices 4700 and 4800 is often proportional to the amount of energy generated by the input, sensed by the output, and carried by the inclusions. By using the modified ELR materials described herein, improved acoustic wave devices can be realized because device input and output losses are minimized.

SAW devices are often used with radio frequency filters and the delayed outputs at the output terminals are recombined to produce a finite impulse response filter or a sampled filter. The BAW device can be used to implement a lattice filter or a ladder filter.

Cavity filter with modified ELR material The above filter generally describes the use of modified ELR material deposited on planar conductive paths, stripline traces, etc., but the shape should be planar There is no. Instead, the modified ELR material can be used in multiple three-dimensional structures as part of a coaxial structure, waveguide, or other structure. One example is to use ELR material modified in a cavity filter, a simple example of which is shown in FIG. 49-N. The cavity filter passes the desired frequency, but does not pass other frequencies, and thus functions as a bandpass or notch filter. The cavity filter is also used as a duplexer.

As shown, the cavity filter 4900 includes an input line 4910 and an output line 4915 coupled to an input loop 4920 and an output loop 4925, respectively. The loop is shown as a cylinder disposed in the cavity 4905 and having a notch in the front portion. The cavity includes a resonator shown as a central cylinder 4930. The central resonator is usually adjustable by a tuning element (not shown) to adjust the capacitance or impedance of the element, and the central portion 4930
This is a dielectric element that generates a desired resonance between the capacitance of the loop and the inductance of the loops 4920 and 4925.

The cavity 4905 helps to contain the oscillating electromagnetic field, but losses occur in the cavity filter 4900. These losses are usually due to the finite conductivity of the cavity walls. By forming the cavity 4905 from the modified ELR material described herein, such losses can be minimized, thereby reducing the attenuation of the oscillating magnetic field generated by the cavity filter 4900. it can. In some examples, the cavities can simply be formed from a conductive or dielectric cylinder covered with a thick film formed of a modified ELR material.

Also, two or more cavity filters can be coupled together by coupling an opening such as a cavity formed from a thick film of modified ELR material or an internal split ring resonator. The cavity filters coupled together can produce a more accurate filter response for use with microwave filters or other wireless transmission systems. Cavity 4905 is shown as having a cylinder shape, and modeling cylinder shape behavior is easier than other complex cavity geometries, but many other configurations are possible.

Still further, the cylinder 4930 was formed from a dielectric material and was modified at the base of the cylinder 4930.
Other types of cavity resonators are possible, such as dielectric resonators that are placed on ELR material that is combined or modified with ELR material, all in cavity 4905. By reducing the length or height of the cavity and placing the resonator on a film made of modified ELR material,
The resonator need not hang in the cavity. Another type of cavity resonator may be a coaxial cavity resonator, a helical cavity resonator, a cavity composed of microstrip and stripline conductors, or a coplanar resonator. Further details regarding such resonators are given above.
It can be found in Chapter 3 of the N. Lancaster book.

Additional Filters or Suitable Examples Containing Modified ELR Material The filters described above may be particularly suitable for use in communication networks and devices such as radio frequency, cellular phones, optical and microwave communications. As mentioned above, by using ELR material modified in the filter, the filter exhibits orders of magnitude lower resistance than the best conventional conductors under similar conditions, thereby providing very high filter gain. Bring.
The gain is close to the ideal filter gain. Also, such a filter can be manufactured in a smaller and more compact form.

In fact, many of the filters described above can be formed using microstrip technology on substrates including wafer substrates, SiP substrates, and the like. Accordingly, many of the filters can be manufactured using thin film manufacturing techniques, many of which are described herein, all of which are common in semiconductor chip manufacturing. Many of the filters that use modified ELR materials can be manufactured as single layer devices, so the processing steps for manufacturing the filters are photolithography, ion milling, contact metallization, and dicing. (Or equivalent). In some examples, the chip can be fabricated using minimum scale manufacturing techniques, such as 1.3 nanometer scale technology. Since there are few restrictions due to layout and distance problems, circuit designers can perform more precise and quick chip design.

Some of the filters described herein can be integrated together with other components such as RF components, analog circuits, etc. on a single chip. By using on-chip sensors, the chip can benefit from clearly improved performance.
By using a modified ELR material within the chip, the chip can enjoy a greater density of circuits. For example, by using a modified ELR material, the chip can operate with less heat loss and thin lines can be used. Since less current travels on each line, the effects of EMF on adjacent lines, filters, and other circuits can be reduced. Interconnects can also be made from ELR materials. Furthermore, since the signal line loss is greatly reduced, the signal can be transmitted without amplification.

As mentioned above, the modified ELR material has a temperature dependent performance. As a result, the filters described herein that use modified ELR materials are also temperature dependent. The temperature change affects the magnetic field penetration into the strip conductor, which affects the superconducting penetration depth as described above. Such altered ELR material variations can be modeled based on temperature and the response behavior of the modified ELR material described herein, or can be derived empirically. Note that by using a modified ELR material, the resistance of the line is negligible, but the resistance can be adjusted based on temperature, as shown in the temperature graph provided herein. Thus, the filter design can be adjusted to compensate for temperature, or the filter output can be adjusted by changing the temperature.

Referring to FIG. 50-N, an example system 5000 is shown that includes a circuit 5010 and a logic circuit 5020 connected to a temperature control circuit 5015 (in FIG. 50-N, interconnected blocks are shown). But fewer or more connections are possible). Circuit 5010 is at least partially formed from modified ELR material using one or more of the filters described herein. The logic circuit controls the temperature control circuit, which in turn controls the cooler / refrigerator that cools the circuit 5010. Accordingly, to increase the sensitivity and response of the system 5000, the logic circuit 5020 sends a signal to the temperature control circuit 5015 to reduce the temperature of the circuit 5010. As a result, the circuit 5010 that uses ELR material, the modified ELR material increases conductivity, thereby increasing the sensitivity and response of the circuit.

Although specific filters have generally been described herein, many other filters are possible. For example, the modified ELR material can be used in addition to the cavity resonator and other filters described above,
Can be incorporated into a synchronous filter. The modified ELR material can be realized with a switched capacitor filter, or a garnet filter, atomic filter or other analog filter.

Although separate filters are shown, the filters can be combined together to form a filter bank, multiplexer, or other more complex filter system, signal conditioner, or array. As with the other categories of filters described herein, many configurations of filter arrays are possible, and implementing a filter array or multiple filter system that is at least partially formed from modified ELR material is not possible. This is a design matter for the filter designer. The modified ELR materials described herein can be used in complex filter systems that include two or more combinations of the filters and principles described herein, even if the combination is not explicitly stated. can do. Indeed, such a complex filter system may use two or more different or heterogeneous filters, or simply similar or not homogeneous filters. Such a filter system or array can be a fairly homogeneous filter, all made of modified ELR material, or a heterogeneous mixture of different types, with some filters made of non-ELR material, or Different filter and different material combinations can be included. Thus, a complex filter system or array may use two or more filters formed from two or more homogeneous filters primarily formed from modified ELR materials, or a modified ELR Two or more heterogeneous filters formed primarily from materials may be used and / or two or more homogeneous / heterogeneous filters formed from both conventional conductors and modified ELR materials May be used.

Although specific examples of filters using components formed in part or in whole from modified ELR materials are described herein, those skilled in the art will recognize that almost all filter configurations conduct current. It is understood that components formed at least in part from modified ELR materials, such as the components listed above, may be used to receive or transmit or condition electromagnetic signals Will do. Known filters and filter systems widely use conductive elements and other elements, some of which are listed above (modified ELR materials can be used with conductive elements in the circuit) However, it may be more appropriate to state that, depending on the definition of “conductivity”, the modified ELR material facilitates the propagation of energy and signals along its length or region). As a result, it is impossible to enumerate in full detail all possible filters and filter systems that can use components formed from modified ELR materials.

Although some suitable shapes are shown and described herein for some filters, many other shapes are possible. These other shapes include material thickness differences, the use of different layers, configurations or layouts for different patterns, lengths and / or widths in addition to other three-dimensional structures. We can use modified ELR materials for almost all filters and associated systems known in the art, and various examples of ELR materials, filters, and principles of this application are available. Modified by the person skilled in the art without undue experimentation
We believe that other filters with one or more components formed entirely or part of ELR material can be realized.

In some embodiments, a filter comprising a modified ELR material can be described as follows.

A filter, configured to receive a substrate, an input signal, a conductive input line formed on the substrate, and configured to output a filtered signal, formed on the substrate A conductive output line and one or more conductive paths formed on the substrate, wherein the one or more conductive paths are the conductive input line and the conductive path. And an electromagnetic coupling between the conductive input line and the conductive output line, wherein the one or more conductive paths are connected to the received input signal. Including a geometric shape formed to provide a filtering function, wherein the filtering function is a desired frequency or a range of desired frequencies, the conductive input line, the conductive output line Or said formed of one or at least pass a part of very low resistance which is changed (ELR) of the more conductive path, which is the changed ELR
The filter is formed of a first layer made of an ELR material and a second layer made of a changing material bonded to the ELR material of the first layer.

A method for manufacturing a filter, comprising: forming a conductive path on a substrate using a modified very low resistance (ELR) film, wherein the modified ELR film is a first layer made of an ELR material And a second layer of a modifying material coupled to the ELR material of the first layer, the conductive path comprising:
Having a geometry configured to filter a received electromagnetic signal, wherein the filtering of the received electromagnetic signal is for at least one of a desired frequency or a range of desired frequencies The manufacturing method characterized by the above-mentioned.

A filter having one or more conductive paths formed on a substrate, the one or more conductive paths formed to provide a filtering function of a received input signal Including a geometric shape, the filtering function is for at least one of a desired frequency or a range of desired frequencies, and at least a portion of the one or more conductive paths is A filter comprising: a conductive material formed of a first portion made of an ELR material; and a second portion made of a material to be changed that is bonded to the ELR material of the first portion.

A filter, comprising: a substrate; and a serpentine conductive path formed on the substrate, wherein the serpentine conductive path is substantially the serpentine conductive path to form a delay line filter or a low-speed transmission line filter. A plurality of windings formed in a continuous length, the meandering conductive path,
A very low resistance (ELR) film modified to provide a very low resistance to an input electromagnetic signal, the modified ELR film comprising a first layer of ELR material; One layer of said
And a second layer of modifying material bonded to the ELR material.

A filter comprising at least two electrical elements coupled in series or in parallel, at least one of the electrical elements being an inductive element or a capacitive element, wherein the inductive element is a magnetic field The inductive element has a modified very low resistance (ELR) material configured in a loop or coil shape, the capacitive element stores energy in an electric field, and The capacitive element has a modified very low resistance (ELR) configured in at least two spaced apart conductors, the modified ELR material comprising a first portion of ELR material And a second part made of a material to be modified that is bonded to the ELR material of the first part.

A filter element, comprising: a piezoelectric material; an input conductor formed in a first portion of the piezoelectric material; and an output conductor formed in a second portion of the piezoelectric material, wherein the first portion and the The second part is spaced apart from each other and provides a region separating the piezoelectric material, wherein at least one of the first part and the second part has a modified very low resistance (ELR). And the modified ELR material comprises a first portion made of ELR material and the EL of the first portion.
A filter comprising: a second portion made of a material to be changed, which is bonded to an R material.

A filter element comprising: a first conductive loop; a second conductive loop; a resonator; a conductive housing for enclosing the first conductive loop, the second conductive loop, and the resonator; The conductive casing is configured to resonate with electromagnetic waves having at least one frequency, and the resonator, the conductive casing, the first conductive loop, and the second conductive loop. Is formed at least in part from a modified very low resistance (ELR) material, wherein the modified ELR material is coupled to a first portion of ELR material and to the ELR material of the first portion. And a second part made of the material to be changed.

A filter system comprising a plurality of filter elements, each filter element having one or more conductive paths formed on a substrate, wherein the one or more conductive paths are received Including geometric shapes formed to provide a filtering function of the input signal, the filtering function being for at least one of a desired frequency or a range of desired frequencies, and At least a portion of the one or more conductive paths comprises a first portion made of ELR material and a second portion made of a modifying material bonded to the ELR material of the first portion, wherein the 1 A filter system characterized in that one or more conductive paths provide a collectively combined filter function.

A system comprising an antenna, a logic or analog circuit, and at least one filter element coupled between the antenna and the logic or analog circuit, wherein the filter element is one or Having one or more conductive paths, wherein the one or more conductive paths include a geometric shape formed to provide a filtering function of the received input signal, the filtering function being desired At least one of the one or more conductive paths, a first portion made of ELR material, and the first portion And a second portion of the modifying material coupled to the ELR material.

Chapter 14 Antennas Made of ELR Material Refer to Figure 1-36 and Figure 37-O through Figure 56-O for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Very low resistance (ELR, such as modified, apertured, and / or other ELR materials
) Various types of antennas using a film of material are described herein. For the types of antennas described below, the antenna is a film, tape, foil, wire,
It includes a substrate on which nanowires, traces and other conductors are formed or disposed. Other types of antennas are configured to use ELR material in which certain components of the antenna are modified. In some examples, the modified ELR material is the type of material, the application of the modified ELR material, the size of the component / element using the modified ELR material, the operating requirements of the device or machine using the modified ELR Manufactured based on. Thus, materials used as modified ELR material base layers (unmodified ELR materials) and / or materials used as modified layers of modified ELR materials in antenna design and manufacture Can be selected based on various considerations and desired operating and / or manufacturing characteristics.

FIG. 37-O is a schematic diagram of an equivalent circuit of an antenna. The antenna equivalent circuit is radiation resistant 37
02, loss resistance 3704, and reactance 3706 can be modeled as a series combination.
For example, the reactance of a short dipole antenna can be modeled as a capacitance, and the reactance of a small loop antenna can be modeled as an inductance. The radiation resistance 3702 can be regarded as an equivalent resistance such that the power consumed therein indicates the power actually radiated. The loss resistance 3704 is due to conductor loss in the antenna element itself.

As the antenna size (with respect to wavelength) decreases, the loss resistance and radiation resistance also decrease. However, the radiation resistance decreases much more rapidly. At some point, especially with electrically small antennas, the loss resistance becomes more dominant than radiation resistance, and this antenna is too inefficient and impractical. However, forming the antenna element from a modified ELR material reduces the loss resistance and allows a smaller antenna to be more efficient.

There are various rules of thumb for making the antenna electrically small. The most common but not exclusive definition is that the maximum dimension of the antenna is less than one tenth of the wavelength (ie, λ). Thus, a dipole having a length of λ / 10, a loop having a diameter of λ / 10, or a patch having a diagonal dimension of λ / 10 is considered to be electrically small. This definition is not distinguished among the various methods used to construct an electrically small antenna. In practice, most research on these antennas involves selecting a suitable topology for a particular application and developing an integrated or external matching network.

In some cases, the antenna element of a short dipole or small loop antenna is
It can be a film, tape, foil, wire, nanowire, trace or other conductor using a modified ELR material formed on or disposed on the substrate. A suitable antenna for using the modified ELR materials described herein is a microstrip antenna that is a conductive trace formed on a dielectric substrate, such as a printed circuit board. However,
Microstrip antennas can be fabricated on smaller substrates on a much smaller scale using semiconductor manufacturing processes and other nanoscale techniques.

FIG. 38-0 illustrates a microstrip antenna element 3800 formed at least in part from a modified ELR material such as a film having an ELR material base layer and a modifying layer formed on the ELR material base layer. It is a figure which shows a cross section. Various suitable membranes formed from modified ELR materials are described in detail herein. As shown in the illustration of FIG. 38-O, the antenna element 3800 includes an ELR material base layer 3804 and a modifying layer 3806 formed on the base layer 3804. The antenna element can be formed on a substrate 3802 such as a printed circuit board, a dielectric substrate of an integrated circuit, or other dielectric material (including air). The ground plane 3808 is disposed on the opposite side of the dielectric substrate 3802. In some examples, the ground plane can also be formed from a modified ELR material. Antenna element 3800 formed from modified ELR material
Conventional HT, such as 150K, room temperature or ambient temperature (294K, or other temperatures described herein
It exhibits little or no resistance to current flow in the conductive path at temperatures higher than those used with the S material.

The material or dimensions of the substrate 3802 can be selected based on various factors. For example, selecting a substrate material based on its dimensions and dielectric constant can match the antenna's input impedance to the impedance of the system, or can help improve antenna bandwidth and efficiency. One skilled in the art will appreciate that the substrate can be formed from many different materials and many different shapes in order to obtain the desired characteristics and / or desired operational characteristics.

Many substrate materials can be used. For example, the substrate can be the following substrate deposited in bulk or on another substrate. For example, amorphous or crystalline quartz, sapphire,
Aluminum oxide, LaAlO ₃ , LaGaO ₃ , SrTiO ₂ , ZrO ₂ , MgO, NdCaAIO ₄ , LaSrAIO ₄ , CaYAIO ₄
, YAIO ₃ , NdGaO ₃ , SrLaAIO ₄ , CaNdAIO ₄ , LaSrGaO ₄ and YbFeO ₃ can be used. The board
Good quality grown, deposited or rearranged ELR material compatible, selected to be inert, and can have the desirable properties described herein. A substrate having a high dielectric constant and used with existing or conventional antennas can provide a good substrate for the antennas described herein as well.

FIG. 39-O shows a short dipole antenna formed from a modified ELR material and a corresponding matching network. The antenna and matching network are formed from a modified ELR material on a dielectric substrate 3902. The ground surface 3906 is formed on the other surface of the dielectric substrate 3902. In some examples, the ground plane is also formed of a modified ELR material. The antenna includes a runner 3904 connected to the system feed line 3908 via a conductive path 3910. The conductive path 3910 along with the stub section 3912 forms a matching network for the dipole antenna. Of course, many other antennas and matching network configurations are possible, and it is a designer's design matter to realize a small dipole antenna formed of a modified ELR material.

FIG. 40-O shows a matching network corresponding to a small loop antenna formed from a modified ELR material. Antenna and matching network changed EL
Formed on a dielectric substrate 4002 from an R material. The ground plane 4006 is formed on the other surface of the dielectric substrate 4002. In some examples, the ground plane is also formed of a modified ELR material. The antenna is
It comprises a loop of modified ELR material 4004 that is connected to the system feed line 4008 via a conductive path 4010. The conductive path 4010 together with the capacitor 4012 forms a matching network for the dipole antenna. Although the capacitors in FIG. 40-O are shown as individual elements, the capacitance of the matching network can also be formed using the microstripline principle.

Although small loops and the above dipole antennas have been described as being formed on a substrate using microstripline technology, other technologies can be used to realize modified ELR material antenna structures. Can do. For example, loop or dipole antennas can be formed from modified ELR nanowires without being placed on the substrate.

41-O, FIG. 42-O, and FIG. 43-O show other examples of the microstrip antenna. Similar to the dipole and loop antennas described above, miniaturized microstrip antennas for mobile applications are less efficient than larger patch antennas due to resistive losses.
Forming modified ELR material antenna elements reduces these resistive losses and makes smaller antenna structures sufficiently efficient. FIG. 41-O is an example of a normal microstrip patch antenna. The antenna is formed on a dielectric substrate 4102 that separates the antenna element 4104 from the ground plane 4106. In the example of FIG. 41-O, the signal is the edge feed network 4108.
Supplied to or from the antenna via One skilled in the art will appreciate that other feed network configurations such as probe feeds, plugged edge feeds, probe feeds with gaps, edge feeds with gaps, dual layer feeds, aperture coupled feeds, etc. can be used.

42-O is an example of the microstrip antenna H. FIG. This antenna is much smaller than a normal patch antenna, but can exhibit similar operating characteristics. The antenna is formed on a dielectric substrate 4202 that separates the antenna element 4204 from the ground plane 4206. The exemplary H-antenna of FIG. 42-IV is supplied by a probe feed network 4208, but may be supplied by any number of suitable feed networks.

FIG. 43-O is an example of a meander line antenna. As the name indicates, the antenna element 4304 is formed by a meandering line on a substrate 4302 that separates the antenna element from the ground plane 4306. The meander line antenna can be designed to be a very small and narrow frequency antenna, or it can be designed to be a high bandwidth antenna with multiple resonant frequencies.

Of course, many other antennas and matching network configurations are possible, and it is a design matter for designers to realize antennas formed from modified ELR materials. Indeed, the principles governing the design of conventional antennas and matching networks can also be applied to make antennas using the modified ELR materials described herein.
Thus, although several antenna geometries are shown, of course many other shapes are possible.

Although generally described above as an electrically small antenna, the present invention includes any antenna, such as an antenna that is not necessarily electrically small. For example, the antenna described above (and below)
Can have a conductor length that is at least partially formed from a modified ELR material. Alternatively or additionally, the modified ELR material is formed along the length of the conductor or along a rigid elongated structure having the necessary geometric shape to provide the function of the antenna or Can be coated. Such a structure can be formed of a conductive material, a dielectric material, or both a conductive material and a dielectric material.

Although several suitable geometric shapes for the antenna are shown and described herein, many other shapes are also possible. These other shapes include configurations and layouts for different patterns, different lengths and / or widths, as well as differences in material thickness, use of different layers, and other three-dimensional structures.

Resonant antennas containing modified ELR materials A resonant antenna is an antenna that works well at a single frequency or a narrow range of frequencies. A resonant antenna is usually a length in the range of half the wavelength. As mentioned above, an electrically large antenna is much more efficient than a miniaturized antenna. Resonant antennas made from conventional conductive materials are more efficient than miniaturized antennas used at the same frequency. However, improvements in performance such as high radiation efficiency and strong gain can be achieved by implementing or modifying resonant antenna structures with modified ELR materials.

There can be almost an unlimited number of resonant antennas. For example, referring to FIGS. 41-0 to 43-O, a microstrip antenna similar to the antenna described above operates as a resonant antenna at a specific frequency such that the resonant frequency of the antenna depends on the size of the antenna. be able to.

In addition to the substrate, in some examples, the resonant antenna is formed from a wire or other conductor that is not formed on the substrate. FIG. 44-O is a diagram illustrating an example of a dipole antenna formed of a modified ELR material. The exemplary antenna shown in FIG. 44-O has two open shorted conductors 4402, 4404 coupled to a feed network (not shown) formed of a modified ELR material.
including. In some examples, the half-wave dipole can be formed from a single conductor having a half-wavelength in which the feed network is coupled to the conductor at the center point. In another example, the conductor or conductor length can be adjusted for wavelengths that have an effect of changing the radiation pattern of the antenna.

FIG. 45-0 is a diagram showing a V-shaped dipole antenna formed of a modified ELR material.
The V-shaped dipole is formed of two open circuit conductors 4502, 4504, eg, open circuit transmission lines in which the conductors are positioned relative to each other at an angle 4506. FIG. 46-O is a diagram illustrating an example of a folded dipole antenna formed of a modified ELR material. The folded dipole is formed from a single conductor 4602 in a narrow loop.

Of course, many other antenna configurations are possible, and realizing a resonant antenna formed of a modified ELR material is a designer's design matter. Indeed, the principles governing the design of conventional antennas and matching networks can also be applied to making antennas using the modified ELR materials described herein. Thus, although several antenna shapes are shown, of course, many other antenna shapes are possible.

Broadband antennas containing modified ELR materials Wideband antennas that operate effectively over a wide frequency range can also benefit from the modified ELR materials. Like the other antennas described above, broadband antennas suffer from losses due to the resistance of the materials used to form the antenna elements. The antenna element loss of a broadband antenna is usually a function of frequency, limiting the effectiveness of the antenna at low frequencies. When the antenna element resistance is reduced by forming an ELR material antenna element that has been modified, the antenna becomes more effective over a wide range of frequencies.

FIGS. 47A-O illustrate an exemplary ribbon dipole antenna formed of a modified ELR material. The ribbon dipole antenna includes a pair of wide flat conductors 4702, 4704 connected to a transmitter / receiver / transceiver 4706. The width of the conductor improves the bandwidth of the antenna relative to the conventional dipole antenna. In some examples, the conductor width can be varied to further improve the antenna bandwidth. For example, the bow tie antenna of FIG. 47B-O has a pair of conductors that become wider away from the transmitter / receiver / transmitter / receiver 4716.
Including 4712, 4714. The effective bandwidth of both ribbon and bow tie antennas can be increased by forming antenna elements from modified ELR material. In some examples, the antenna element is formed on a dielectric substrate as described herein.

Other configurations of the antenna element further improve the bandwidth. For example, the spiral antenna of Figure 48-O has an excellent pair of antenna elements 4802 and a very wide bandwidth and
Includes 4804. As other broadband antennas have been described herein, the effective bandwidth can be further increased by forming spiral antenna elements from modified ELR materials.

Of course, as with the other categories of antennas described herein, many configurations of broadband antennas are possible, and realizing a broadband antenna formed of a modified ELR material is a design consideration for the designer. It is. Indeed, the principles governing the design of conventional broadband antennas can also be applied to make antennas using the modified ELR materials described herein. Thus, although several antenna shapes are shown, of course other antenna shapes are possible.

Aperture antenna with modified ELR material Another antenna structure that can all benefit from being formed from or partially formed from modified ELR material is an aperture antenna. Part of the structure of the aperture antenna is an antenna aperture through which electromagnetic waves flow. An aperture antenna acting as a receiver collects waves through the aperture. Normally, an aperture antenna is the best antenna for applications that require very high gain. Like other antennas described herein, conventional aperture antennas suffer from resistance losses due to the resistance of the materials used to form the antenna structure. Forming the antenna structure from the modified ELR material reduces these resistance losses and improves antenna efficiency.

FIG. 49-O is a cross-sectional view of an antenna aperture formed of a modified ELR material. The antenna aperture 4902 is defined by an ELR material base layer 4904 and a modifying layer 4906 formed on the base layer. In the example of FIG. 49-O, the antenna aperture 4902 is shown as a rectangle, but those skilled in the art will understand that the antenna aperture can be defined in other geometric shapes based on known design principles. I will.

FIG. 50-O is a cross-sectional view of an antenna aperture partially formed of a modified ELR material. Figure 50-O
In this example, the antenna aperture 5002 is defined by a conventional material 5004 such as aluminum or a dielectric layer. Since electromagnetic waves propagate on the inner surface of the antenna opening, the antenna opening
It can be lined with modified ELR materials to reduce the resistive losses associated with conventional materials. The modified ELR material includes an ELR material base layer 5006 and a modifying layer 5008 formed on the base layer.

In some examples (not shown), different configurations of modified ELR materials can be used. For example, in FIG. 49-O, the positions of the layer 4906 to be changed and the ELR material base layer 4904 may be interchanged. In other words, in these examples, the base layer 4904 can be disposed on the inside of the antenna aperture and the modifying layer 4906 can be disposed on the outside of the antenna aperture. Similarly, in FIG. 50-O, the placement of the ELR material base layer 5006 can be exchanged for the layer 5008 to be modified.

FIG. 51-O illustrates an exemplary horn antenna formed at least in part from a modified ELR material as described in FIGS. 49-O, 50-O. The antenna opening 5102 of the horn antenna in FIG. 51-O is formed to project from both sides of the waveguide 5106 supplied to the horn antenna in order to form the horn portion 5104. In the example of FIG. 51-O, the waveguide extends in both directions. However, in other examples, the waveguide can extend in only one direction while maintaining the dimensions of the optical waveguide in other directions. Other shapes and configurations of aperture antennas can also benefit from the reduction in resistance loss achieved by at least partially forming the antenna with modified ELR material.

Another type of aperture antenna that can benefit from reduced resistance loss by forming a modified ELR material structure is a reflector antenna. Reflector antenna systems are often used in applications that require high gain. FIG. 52-O is a cross-sectional view of a reflector antenna formed of a modified ELR material. This antenna system includes a reflecting mirror 5202 and a feeding antenna 5204. The feeding antenna can be many types of antennas. For example, a feed antenna is any of the antenna elements described herein, some of which are made of modified ELR material or lined with modified ELR material. . In some examples, the reflector is completely formed of a modified ELR material. In another example, the mirror is lined with a layer 5206 of modified ELR material, as shown in FIG. 52-O.

Of course, as with the other categories of antennas described herein, many configurations of aperture antennas are possible, and realizing an aperture antenna formed of a modified ELR material is
It is a design matter of the designer. Indeed, the principles governing the design of conventional broadband antennas can also be applied to make antennas using the modified ELR materials described herein. Thus, although several antenna shapes are shown, many other antenna shapes are of course possible.

Antenna array with antenna elements formed of modified ELR material Multiple antenna elements can be used to generate a radiation pattern that fits a specific purpose.
Often configured in an array. For example, FIGS. 53A-O illustrate an exemplary array of patch antennas. Array is made of modified ELR material patch antenna 5302-5
Includes 308. The array of patch antennas 5302-5308 may be supplied by a feed network, shown schematically as 5310. The feed network can be formed from ELR material, similar to a patch antenna. In some examples, the feed network can be formed on a conductive, semiconductor, or insulating substrate, as will be appreciated.

53B-O is a diagram of the Yagi-Uda array. In the Yagi-Uda array, an antenna element 5312 formed from a modified ELR material is supplied, and the remaining elements 5314 to 5320 operate as parasitic resonators that change the radiation pattern of the supplied antenna. In some examples, one or more parasitic elements 5314-5320 are formed of a modified ELR material.

In some examples, the control logic and feed network may be used to control which antenna array elements are active, to change the antenna radiation pattern without physically changing the antenna array, or for each It can be used to control the phase and magnitude of the signal delivered to the antenna array. FIG. 54-O is a block diagram of an antenna array having components formed from modified ELR materials. System 5400
An array of antennas 5402, a feeding network 5404 for feeding the array of antennas,
Control logic 5406 and memory 5408 are included.

The antenna array can be many types of antenna arrays. The two main antenna arrays include a switched beam smart antenna and an adaptive array smart antenna. A switched beam system uses a plurality of predefined fixed beam patterns. The control logic 5406 makes a decision as to which beam to use or access at a given time point based on system requirements. The adaptive array allows the antenna to direct the beam in the intended direction while nulling the interference signal. The beam direction can be estimated using a so-called direction of arrival (DOA) estimation method.

In some examples, all the antenna elements that make up the array are uniform in geometry, but in other examples, the antenna elements can vary in geometry.
Similarly, the relationship between antenna elements in the array can vary. For example, the antenna elements can be configured in a linear array, a planar array, a conformal array, or a three-dimensional array. The configuration and shape of the antenna element is a design matter of the designer who implements the antenna array in order to obtain a desired radiation pattern.

The signal is supplied from and / or to the antenna array 5402 by the feed network 5404. Feed network 5404 can include active and passive elements to obtain a desired radiation pattern from the array. For example, the feed network 5404 can include a finite impulse response (FIR) tapped delay line filter. The weight of the FIR filter can be used to provide an optimal beamforming by adaptively changing and reducing the error between the desired beam pattern formed and the actual beam pattern. The usual algorithm implemented by FIR filters is steepest descent and means at least a square algorithm.

Again, as with the other categories of antennas described herein, many configurations of antenna arrays are possible, and realizing an antenna array formed of modified ELR material is the designer's design. It is a matter. Such arrays can be fairly homogeneous antennas, all made of ELR material, or a heterogeneous mixture of different types of antennas, some antennas made of non-ELR material, or different antennas And a combination of different materials. Similarly, many other components of system 5400 can be implemented using modified ELR materials. Although several antenna shapes are shown, many other antenna shapes are of course possible.

Matching network with modified ELR material and other embodiments When the antenna is adapted to a system operating as a transmitter / receiver, the antenna is more efficient and practical. To adapt the antenna to the connected electronics,
The matching network is used to change the impedance of the antenna structure to match the impedance of the system. As the antenna becomes smaller, the reactance of the antenna increases. When a large reactance value is combined with a small antenna resistance, it becomes difficult for the small antenna to match the system impedance. However, such matching networks formed from the modified ELR materials described herein can significantly improve small antenna matching.

In some examples, any of the structures using the modified ELR materials described herein are
It can exhibit very low resistance to current flow at temperatures between the transition temperature of conventional HTS materials and room temperature. In some embodiments, any of the structures using the modified ELR materials described herein are highly sensitive to current flow at temperatures of 150 K or higher, as described herein. Can exhibit low resistance. In these examples, the structure can include a suitable cooling system (not shown) used to cool the structural element to the critical temperature of the modified specific ELR material. For example, the cooling system may be a system that can cool the ELR material in the structure to at least the same temperature as the liquid chlorofluorocarbon, or to other temperatures described herein. That is, the cooling system is a modified ELR used in the structure
Selection can be based on the type and structure of the material. Other considerations for selecting a cooling system may also be the amount of power consumed by the structure.

In some examples, some or all of the systems and devices described herein may be used in certain applications where the modified ELR material used exhibits very low resistance at temperatures below ambient temperature. A low cost cooling system may be used. As described herein, in some examples, the application is a system that cools ELR material that has been changed to the same temperature as the liquid chlorofluorocarbon, or to the same temperature as other temperatures described herein. A cooling system (not shown) can be included. The cooling system can be selected based on the type and structure of the modified ELR material used in the application.

In addition to the systems, apparatus, and / or applications described herein, one of ordinary skill in the art will recognize that other systems, antennas, and other applications that include antennas are modified ELRs as described herein. It will be appreciated that antennas formed from materials may be utilized. For example,
FIG. 55-Ο is a block diagram of a portable device including an antenna formed from a modified ELR material. The mobile device described herein is an example of one type of wireless device that can implement this technology, and other wireless devices can also be used to implement this technology. For example, mobile devices include mobile phones, smartphones, personal digital assistants ("PDA"), portable e-mail devices (such as BlackBerry (registered trademark) devices),
Portable media player (Apple iPod touch (registered trademark) etc.), tablet or slate computer (eg Apple app (registered trademark) etc.), netbook computer, notebook computer, electronic reader, or other with wireless communication capability Devices can be included.

Portable device 5500 includes a display 5510. In some embodiments, the display 5510
Comprises a touch screen that allows direct manipulation of the displayed data. Mobile device 5500
Has a multi-function input module 5504 for operating the mobile device, navigating the display, and making data selections. The input module 5504 may be a mouse, trackball, touch screen, input module keyboard or the like that can communicate user selections. In addition, the mobile device 5500 transmits and receives information over the wireless network.
An ELR antenna system 5506 formed from a modified ELR material is used. The antenna system 5506 can be coupled to a receiver, transmitter, or transceiver (not shown). Although not shown, the portable device can include a portable power source, a memory, a logic circuit, and other components common to the portable device.

The antennas described above may be particularly suitable for use in communication networks and devices such as radio frequencies, mobile phones, optical communications, microwave communications and the like. As mentioned above, by using ELR material with such an antenna, the antenna exhibits orders of magnitude lower resistance than the best or common conductors under similar conditions, thereby making it ideal This results in a very high antenna gain that is close to the antenna gain. Also, such an antenna can be manufactured in a smaller and more compact form.

In practice, many of the antennas described above can be formed using microstrip technology on substrates including wafer substrates. Thus, many antennas can be made using thin film manufacturing techniques, many of which are described herein, all of which are common in semiconductor chip manufacturing. Since many antennas using modified ELR materials can be manufactured as single layer devices, the processing steps to make such antennas are photolithography, ion milling, contact metallization, and dicing (or equivalent). ) Is simplified in each step.

Another exemplary device 5600 that uses the antennas described herein is shown in FIG. 56-0. This device includes an antenna 5602 coupled to an RF circuit 5604. The RF circuit can include a receiver, transmitter, transceiver, signal generation circuit, modulator, demodulator, and the like. The device also includes a logic circuit 5606 and a memory 5608. The device 5600 may be manufactured on a single chip, for example, or may form an RFID chip. (Alternatively, the antenna 5602
Or a microstrip antenna formed with components 5604, 5606, 5608, such as a circuit formed on a chip, a substrate, or a circuit interconnected with a substrate on a substrate such as a printed circuit board).

By using an on-chip antenna, the chip can benefit from clearly improved performance. By using a modified ELR material within the chip, the chip can enjoy increased circuit density. For example, using a modified ELR material can carry more current per unit line, resulting in less chip heat loss and the use of thin lines. Lines and interconnects can be made from modified ELR materials. Also, since the line loss is greatly reduced, a signal can be transmitted without an amplifier. In addition, the chip can be fabricated using minimum scale manufacturing techniques such as 1.3 nanometer scale technology, which can leave a lot of room on the chip for one or more antennas. it can. Since the current flowing through each line is small, the influence of EMF between adjacent lines such as other circuits can be reduced. Circuit designers can design chips more precisely and quickly because there are fewer restrictions based on layout and distance issues.

Although specific examples of antennas using components that are partially or wholly formed from modified ELR materials are described herein, those skilled in the art will recognize radio signals that conduct current in any antenna configuration. It will be appreciated that components that are at least partially formed from modified ELR materials, such as the components described above, can be used to receive, transmit, transfer, and modify electromagnetic signals.

Various antennas and antenna systems make extensive use of the conductive elements described above and other elements. Thus, it is impossible to enumerate all antennas and antenna systems that can use components formed from modified ELR materials in detail. Although suitable geometric shapes are shown herein for some antennas, many other shapes are possible. These other shapes include different patterns, configurations or layouts for length and / or width, as well as material thickness differences,
Includes the use of different layers, and other three-dimensional structures. We can use the modified ELR material, antennas, and principles of the present application, where substantially all antenna and associated systems known in the art can be used. Those skilled in the art who have been provided with various examples will realize other antennas having one or more components formed entirely or partly from modified ELR materials without undue experimentation I believe you can.

The description herein also emphasizes how a particular filter system can be used with particular components formed from modified ELR materials,
These examples of modified ELR components are exemplary and are not intended to be exhaustive. Those skilled in the art, supplied with various examples of the present disclosure, will be able to identify other components within the same or similar antenna system formed from modified ELR materials.

Also, those skilled in the art will recognize that the inventors have developed complex antennas that include two or more combinations of the antennas and principles described herein, even if their combinations are not explicitly described. It will be understood that it is intended to be used in the system.
Indeed, such a complex antenna system may use two or more different or dissimilar antennas, or simply antennas that are not similar or dissimilar.

In some embodiments, an antenna that includes a modified ELR material can be described as follows.

A system comprising a receiver, transmitter, or transceiver and at least one antenna element coupled to the receiver, transmitter, or transceiver, the at least one
One antenna element is formed of a modified ELR material having a first layer of very low resistance (ELR) material and a second layer of modifying material coupled to the ELR material of the first layer System characterized by being.

A structure having a plurality of antenna elements and a feeding network coupled to the plurality of antenna elements, wherein at least one of the plurality of antenna elements is a very low resistance (ELR) material And a second layer of a modified material bonded to the ELR material of the first layer.

A structure having a dielectric substrate and a broadband antenna element disposed on a first side of the dielectric substrate, wherein the antenna element is a first made of a very low resistance (ELR) material. A structure formed of a modified ELR material having a layer and a second layer of a modifying material bonded to the ELR material of the first layer.

A structure comprising a dielectric substrate and a resonant antenna element disposed on a first side of the dielectric substrate, wherein the antenna element is made of a very low resistance (ELR) material; And a second layer of a modified material bonded to the ELR material of the first layer, wherein the structure is formed of a modified ELR material.

A structure having a dielectric substrate and an electrically small antenna element disposed on a first side of the dielectric substrate, the antenna element having a very low resistance (ELR)
A structure formed of a modified ELR material having a first layer of material and a second layer of modified material bonded to the ELR material of the first layer.

An aperture antenna, a conductive surface forming an aperture having a supply end and a radiating end;
A feed network coupled to the supply end of the opening, wherein the conductive surface is coupled to a first layer of very low resistance (ELR) material and to the ELR material of the first layer. An aperture antenna, characterized in that it is formed of a modified ELR material having a second layer made of the material to be modified.

Chapter 15 Energy Storage Device Made of ELR Material For the explanation of this chapter, refer to Fig. 1-36 and Fig. 37-P to 43-P. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Very low resistance (ELR) like modified, apertured and / or other ELR materials
) Various types of energy storage devices using films of ELR materials are described herein. "Modified ELR material" and / or various configurations of modified ELR material (modified E
Various examples of the invention have been described with reference to LR membranes, etc., but the improved described herein
Any of the ELR materials may be modified ELR materials (modified ELR materials 1 according to various embodiments of the present invention).
It will be appreciated that apertured ELR materials and / or other new ELR materials can be used. As described herein, these improved ELR materials have at least one improved operating characteristic, such as operating in the ELR state at temperatures above 150K in some examples.

Various energy storage devices are described in detail, including modified, open, and / or other new ELR materials. In general, many configurations of energy storage devices are possible. Indeed, the principles governing the design and configuration of conventional energy storage devices can also be applied to the design of energy storage devices using the modified ELR materials described herein. Thus, although several energy storage devices and configurations are shown and described herein, many other devices are also possible. The description herein also emphasizes how a particular energy storage device can use a particular component formed from a modified ELR material, but the modified ELR component The examples are merely illustrative and are not intended to be exhaustive. Those skilled in the art supplied with various examples of the present disclosure will be able to identify other components within the same or similar energy storage devices / systems formed from modified ELR materials.

FIG. 37-P is a block diagram illustrating an energy storage system 3700 having a component formed from a modified ELR material or a component incorporating at least a portion of the modified ELR material. The energy storage system 3700 can use an energy storage device 3710 that is configured to receive and store energy from an external power source 3720. Power or energy is transmitted from the external power source 3720 to the energy storage device 3710 via the line 3722. The stored energy passes through the energy conditioning system 3730 as needed and is then supplied to the load 3740 via line 3724.

In this example, the external power source 3720 is a power source or power grid, magnetic generator, solar cell or solar panel, photovoltaic (PV) cell or photoelectric cell, transformer, wind turbine, hydroelectric generator, thermoelectric generator, fly Other rotating machine functions such as wheels or generators, and / or other types of renewable / non-renewable energy sources are suitable power or energy sources, but are not limited to these. Details of an example of an energy generating device that supplies energy to the energy storage device 3710 will be described later.

The energy storage device 3710 is a suitable power or energy storage device including but not limited to batteries, power cells, capacitors, supercapacitors, flywheels, magnetic energy storage, SMES, and the like. In some examples, as will be appreciated, the energy storage device 3710 is a rechargeable storage device that can drain power and then be replenished by the power source 3720. In some examples, the system 3700 is configured to receive power from a single external power source 3720 and transmit energy stored in a single device / user. In another example, system 3700 receives power or energy from a plurality of different external power sources 3720 and a power network configured to store the energy in an array, grid, or distributed configuration of energy storage device 3710. Or an array is provided. The stored energy can then be transmitted to the user / device as needed.

Optional energy conditioning system 3730, energy storage device 37 according to load 3740
10 (as needed) configured to change or adjust the output. For example, the energy conditioning system 3730 can be used to convert stored DC current to AC current. The energy conditioning system 3730 may be used to make various changes to the stored energy before the energy is supplied to the load 3740. In yet another embodiment,
System 3700 may not include energy conditioning system 3730. The load 3740 may be a variety of other devices, apparatuses, or facilities that require power or energy. load
3740 includes a single device (cell phone, smart phone, laptop, tablet or other portable electronic device, computer, TV, or other electric device), home or factory, home or community group, power grid, etc. Can do. The energy system design, as will be appreciated, is very specific for each application in which the energy storage device is used, and the specific application and other factors for which shape and placement is desired were used in the system. Move the value and number of components. Thus, the particular types and number of components need not be described herein because they vary from device to device for each application.

Generally speaking, the energy storage system 3700 may include various components that are formed in whole or in part from modified ELR materials. ELR component conducts current, transmits signal or converts signal to electromagnetic signal, or converts electromagnetic signal to signal (including current, voltage, etc.), or transmits electromagnetic signal or Can be configured to change. For example, one or more components of energy storage device 3710, external power supply 3720, transmission lines 3722, 3724, energy conditioning system 3730, and / or other related components may be further modified from ELR films and thin films. It may include features formed from formed nanowires, tapes, foils.

As described above, the external power source 3720 is configured to supply power or energy to the energy storage device 3710. In some examples, the power source 3720, as described above, captures energy, and then converts the captured energy into electrical energy, which is then transferred to the energy storage device 3710, PV cell. It may also include devices such as hydroelectric generators. In some embodiments, at least some of the transmission lines and / or other components used to transmit electrical energy to the energy storage device 3710 can be formed from a modified ELR material.

While specific examples of energy storage devices using components formed from modified ELR materials are described herein, those skilled in the art will appreciate that components of the energy storage device may be substantially configured with components formed from ELR materials. You will understand that you can use it. Such components, as mentioned above, conduct current, signal to electromagnetic signal (current and voltage etc.)
Or convert an electromagnetic signal to a signal, convert stored energy to electrical energy, or transmit an electromagnetic signal to or transmit an electromagnetic signal from an energy storage device, or modify an electromagnetic signal To transmit to the energy storage device or to change the electromagnetic signal from the energy storage device. Known energy storage systems make extensive use of the conductive elements and other elements described herein. As a result, all possible energy storage devices that can use components formed from modified ELR materials
It is impossible to enumerate all the details of the system. However, the inventors are able to use modified ELR materials in the system associated with virtually all energy storage devices known in the art, modified ELR materials of the present application, A person skilled in the art provided with various examples of energy storage devices and principles has one or more components formed in whole or in part from modified ELR materials without undue experimentation I believe that other energy storage devices can be realized.

The description herein also emphasizes how specific energy storage devices / systems can use specific components formed from modified ELR materials, but modified ELR These examples of components are exemplary and not intended to be exhaustive. Those skilled in the art, supplied with various examples of the present disclosure, will be able to identify other components within the same or similar energy storage device / system formed from modified ELR materials.

Also, those skilled in the art will recognize that the inventors have a complex that includes two or more combinations of the energy storage devices and principles described herein, even if the combinations are not explicitly described. It will be understood that it is intended to be used with any energy storage device.

In the drawings, the various sizes, lateral sizes, and various layer thicknesses of the illustrated elements or components are not necessarily drawn to scale, and these various elements increase visibility. Therefore, it may be enlarged or reduced appropriately. Also, when not necessary for the detailed description of the invention, the details of the components are abstracted in the figures to exclude details such as the exact geometry and location of the components and the exact connections between the components. . When such details are not necessary for an understanding of the invention, the representative geometric shapes, interconnections, and configurations shown are intended to exemplify general design and operating principles. It is not an exhaustive list.

Some or all of the systems and devices described herein may be used in applications where the particular modified ELR material used by the application exhibits very low resistance at temperatures below ambient temperature. A low cost cooling system can be used. As described herein, the present application describes a modified ELR inductor up to the same temperature as the boiling point of liquid chlorofluorocarbon.
Alternatively, a cooling system (not shown) can be included, such as a system that cools to the same temperature as the melting temperature of water or other temperatures discussed herein. The cooling system can be selected based on the type and structure of the modified ELR film used depending on the application.

The use of modified ELR materials in energy storage devices provides many advantages. For example, using modified ELR materials in place of HTS materials in an energy storage device can eliminate or reduce the complexity of the cooling system required to operate the energy storage device, and reduce the size of the cooling system. , Reduce weight, mounting and operating costs. The modified ELR material also exhibits stronger and more subtle temperature and photon sensitivity at higher (not cryogenic) temperatures than HTS materials, and improved thermoelectric, photoelectric and other transmission at higher temperatures Characteristics can be provided. Also, the modified ELR material can exhibit strong sensitivity to electromagnetic input signals and / or low current and / or low voltage detection. The modified ELR material can also carry electromagnetic signals (input, intermediate, output current or voltage) over much longer distances with less resistance loss than conventional conductors, which means low noise, or Does not require amplification of these signals and / or allows for lower current levels or allows greater separation between components of the energy storage system. In general, replacing conductive circuit elements such as conventional copper conductors and conventional capacitors and inductors with modified ELR materials reduces resistance losses, which improves the operating efficiency of energy storage devices and reduces waste heat. And / or improve other operating characteristics such as stability, operating life, capital or operating costs, size, weight, geometry, and reliability. For example, using modified ELR materials with various components of the energy storage device, these components can operate more ideally. The ideal performance obtained by these components can then improve the overall performance of the energy storage device.
battery

FIG. 38-P is a schematic diagram of a battery 3800 using a modified ELR material. The battery 3800 includes, for example, a battery having one or more electrochemical cells that convert stored chemical energy into electrical energy. Specifically, the battery 3800 includes a cathode 3810 and an electrolyte.
An anode 3820 separated by 3830 is included. Battery 3800 can be a primary battery / non-rechargeable battery, or
Secondary batteries / rechargeable batteries may be included. Battery 3800 is a lead acid battery, alkaline battery, carbon-
Zinc batteries, nickel metal hydride batteries, nickel cadmium batteries, lithium ion batteries, lithium ion polymer batteries, or other suitable batteries can be included. Although only a single basic battery is shown, it is understood that many different battery configurations are possible. In fact, the battery 3800 is a suitable type of battery (rechargeable battery or battery pack for use in portable electronic devices, batteries, battery packs) used to convert stored chemical energy into electrical energy. Battery packs for use in vehicles, large arrays of batteries for use in utilities or power grids, etc.).

One or more components (such as coils) of battery 3800 can be formed from nanowires, tapes or foils formed from modified ELR films and thin film modified ELR films. The use of the modified ELR materials described herein can provide various advantages and benefits for battery 3800 and the various applications in which battery 3800 is used. For example, the modified EL
Battery 3800 with R material shows less resistance loss than conventional batteries, which means that battery 380
Minimizing the energy loss within 0 can greatly affect the operating cost. Battery 3800 is also expected to have better energy conversion efficiency than conventional batteries that do not contain the modified ELR material.

As mentioned above, the design of the energy storage device is very specific to the application for which the energy storage device is to be used, the specific application, the desired performance characteristics, and other factors include the design of the battery 3800 I am struggling with the composition. Thus, the specific value and number of components need not be described herein because they vary from application to device and from device to device. The inventors can use modified ELR materials in systems associated with virtually all batteries known in the art, and the modified ELR materials, batteries, and principles of the present application. Those skilled in the art who have been provided with various examples have been able to form all or part of the modified ELR material without undue experimentation1
We believe that other batteries with one or more components can be realized.
Fuel cell

FIG. 39-P is a schematic diagram of a fuel cell 3900 having one or more components formed from a modified ELR material. The fuel cell 3900 includes, for example, an anode 3910 and a cathode
3920, and electrolyte 3930 between anode 3910 and cathode 3920. The fuel cell 3900 is an electrochemical cell that converts an external reactant into electric energy. This energy conversion process takes place via an electrochemical reaction, whereby reactants are consumed, by-products are released, and heat is released or consumed. The fuel cell 3900 is configured to operate continuously to generate electricity as long as both fuel and oxidant are available. In some examples, pure hydrogen, hydrocarbons, alcohols, hydrazine are fuels, and pure oxygen and air are oxidants. However, other types of fuels and / or oxidants can be used.

The fuel cell 3900 can include any suitable type of fuel cell that can use modified ELR materials. The fuel cell 3900 is a polymer electrolyte membrane (PEM) fuel cell, proton exchange membrane fuel cell, direct methanol fuel cell, alkaline fuel cell, phosphoric acid fuel cell, regenerative fuel cell, or other suitable type of fuel A battery can be included. The fuel cell 3900 can be used in a variety of different devices and applications. For example, applications include vehicles such as automobiles, buses, ships, trains, and airplanes, portable electronic devices such as mobile phones and laptop computers, wastewater treatment plants, mobile phone base stations for facilities such as hospitals, banks, and police stations. And other communication systems, but is not limited thereto.

As described above, one or more features of the fuel cell 3900 can be formed from nanowires, tapes, foils formed from modified ELR films and modified thin film ELR films.
Utilizing the modified ELR material described herein, a fuel cell 3900 and a fuel cell 3900
It offers various features and advantages for the various applications in which it is used. Since fuel cells use energy electrochemically and do not burn fuel, fuel cells are basically more efficient than combustion systems. Also, the fuel cell 3900 containing the modified ELR material is expected to operate much more efficiently than the conventional fuel cell, and this fuel cell 3900 operates further by minimizing energy loss in the cell Costs can be affected. Thus, the fuel cell 3900 is expected to provide a high efficiency, low emission or zero emission device.
Flywheel

A flywheel is a mechanical energy storage device that is configured to rotate at very high speeds and store energy as rotational kinetic energy. In order to use this energy, the generator converts the kinetic energy stored in the rotating flywheel into electricity. Similarly, additional energy may be applied by using electricity to spin up the flywheel. Compared to other types of energy storage devices, flywheels are very efficient, require little or no maintenance and have a high energy density (many flywheels have a high energy efficiency of 90% )
.

FIG. 40-P shows an example of an energy storage system 4000 that includes a component that includes a flywheel 4010 formed from a modified ELR material. In this example, flywheel 4010 is installed in a vacuum chamber or housing 4020 and is operably coupled to motor / generator 4030. The motor / generator 4030 is configured to drive the flywheel 4010. The system 4000 can include a power conditioning system 4032 configured to change or adjust the output of the flywheel 4010 before power or energy is input / output from the system 4000 as needed.

The system 4000 can also include a magnetic bearing (shown schematically) that includes at least a portion of the modified ELR material. In one example, the underside of flywheel 4010 carries a permanent ring magnet that moves above the bearing. The magnetic bearing supports the flywheel 4010 through magnetic levitation rather than through a mechanical process. Furthermore, the modified ELR material is expected to block the magnetic field so that the system 4000 can provide a stable flywheel 4010 levitation with almost no friction within the housing 4020. Therefore, by using the modified ELR materials described herein, near ideal energy efficiency is achieved with the System 4000 because friction, hysteresis, and / or eddy current losses are greatly minimized. can do.

Flywheels can be utilized in a variety of different applications, including large scale grid energy storage systems. For example, flywheels are combined with many types of renewable power sources (wind power, solar power, hydropower, etc.) to help overcome the variability and inconsistencies associated with energy sources. Can be used. When producing electrical energy from wind, it is common for the energy to be in excess of demand under strong wind conditions. For wind power applications, excess energy can be stored in the flywheel as rotational kinetic energy and is released as electrical energy (electric power) when the demand becomes greater than the energy (electric power) generated. The flywheel can be used in other load leveling applications and other related applications of different types of energy sources. As noted above, utilizing a flywheel using the modified ELR material described herein,
Expected to provide significant improvements in efficiency and operating characteristics compared to conventional flywheels.

Magnetic energy storage (MES)
In some examples, energy storage devices such as SMES systems and other magnetic energy storage systems can utilize the modified ELR inductors described herein.
The magnetic energy storage system is a direct current (DC) in a coil of superconducting material cooled to cryogenic temperature.
It is configured to store energy in a magnetic field generated by the flow of current. Figure 41A-
P is a schematic diagram illustrating an energy storage system 4100 having components formed from, for example, a modified ELR material. The energy storage system 4100 includes an induction coil 4115 or a storage unit 4110 having a coil and a power conditioning system 4120 having an inverter / rectifier 4125. Storage component 4110 is an inductor 4115 formed from modified ELR material
Store energy in a magnetic field generated by Power conditioning system 4120 receives energy from storage component 4110, regulates the received energy (converts stored DC to AC), and supplies conditioned energy to various power sources such as power installation 4130 Can do. One skilled in the art will appreciate that the energy storage system 4100 may be implemented in many other applications and devices not described herein.

FIGS. 41B-P are another exemplary schematics of an energy storage system 4150 that uses one or more components formed from modified ELR materials. In this example, energy storage system 4150 includes a transformer 4152 configured to condition or change incoming signals to system 4150 and / or outgoing signals from system 4150. Transformer 4152 was changed
One or more components formed from ELR material can be included. System 4150 further includes a power conditioning system 4154 (eg, an inverter / rectifier). System 4
150 also includes a magnetic energy storage device 4160 that includes an energy storage magnetic coil 4162 and a cooling component / cryostat 4166 disposed within the housing 4164. The coil 4162 can be formed, for example, completely or at least in part from a modified ELR material. The housing 4164 is configured to include a magnetic field (such as Lorentz force) and can further include a support structure / assembly (not shown). In some examples, at least a portion of system 4150 may be embedded in the ground. Cooling component 4166
Optional component in system 4150, configured to maintain coil 4162 at a desired temperature. In other examples, system 4150 may include different features and / or features of system 4150 may have different configurations.

Conventional SMES systems are generally more efficient than many other energy storage systems described herein, but relate to maintaining superconducting materials in SMES systems at temperatures on the order of boiling liquid nitrogen. Because of the problem, it is usually very expensive to operate. However, in contrast to conventional systems, the systems 4100 and 4150 described herein that use modified ELR materials are conventional SMES systems without the problems associated with high cost and complex cooling systems. Is expected to provide efficiency and benefits. For example, as described above, the materials described herein exhibit ELR properties at high temperatures (at or above the boiling point of liquid chlorofluorocarbon and ambient temperature). Thus, an elaborate and complex cooling system is an optional feature and is not always necessary in many instances.

Systems 4100 and 4150 also have some additional advantages. For example, systems 4100, 4150 including magnetic storage devices have a very short time delay when charging and discharging compared to many other energy storage devices described herein. Electricity is available at the power facility almost instantaneously. In addition, the systems 4100, 4150 encounter resistance with very little current through the system, so little or no power is expected to be lost. Thus, the systems 4100, 4150 are expected to operate fairly efficiently when compared to many other energy storage devices (eg, batteries). Finally, since the major components of the magnetic energy storage system described above are generally stationary during operation, the systems 4100, 4150 require significantly less maintenance and are less than other more complex energy storage systems. It is expected to have high reliability.

Capacitors and Supercapacitors with Modified ELR Components Capacitors can be formed using the modified ELR materials described herein.
FIG. 42-P is a schematic diagram of a simple parallel plate capacitor 4200, for example. Capacitor 4200
Any of the energy storage devices disclosed herein can be used, or can be used in other suitable devices or components. In this example, the capacitor 4200 has an input terminal 4210 connected to a conductive plate or region 4230 and 4240, respectively.
And output terminal 4220. The conductive plates / areas are separated by a distance that is at least partially filled with dielectric 4250. The dielectric may be air or other known dielectrics used in capacitors such as insulators, electrolytes, or other materials or compounds.

The plates / regions 4230, 4240 can use modified ELR materials. Alternatively or additionally, ELR material can be used for input terminal 4210 and output terminal 4220. Although a simple parallel plate capacitor is shown, a capacitor formed in an arbitrary form such as a semiconductor chip or a capacitor formed on a MEMS base capacitor can be used.

In some embodiments, supercapacitors or ultracapacitors can be formed using the modified ELR materials described herein. The supercapacitor is configured to store different power or energy than the batteries and other energy storage devices described herein. More specifically, the supercapacitor polarizes the electrolyte for storing electrostatic energy. Supercapacitors are electrochemical devices,
Does not include chemical reactions in the energy storage mechanism. Therefore, unlike many types of batteries, this behavior is very reversible and the supercapacitor can perform hundreds of thousands of cycles (charge / discharge) without affecting performance. In addition, most supercapacitors have nearly 100% efficiency.

FIG. 43-P is a schematic diagram of a component using a supercapacitor or ultracapacitor 4300 formed at least in part from a modified ELR material. Super capacitor
The 4300 comprises two unreacted porous plates or collectors 4310, 4320. Electrolyte 4330
(Activated carbon, sintered metal powder, etc.) is placed between the two plates 4310, 4320. In some examples, carbon is utilized as electrolyte 4330 because it is chemically inert and conductive, and can be easily treated to contain large amounts of internal pores. The surface area formed by the internal pores of the carbon electrolyte allows a significant amount of energy to be stored in the supercapacitor 4300. Supercapacitor 4300 includes a dielectric separator 4340 between two plates 4310, 4320. In operation, a voltage potential is applied between plates 4310 and 4320. The potential applied to the negative electrode (plate 4320) attracts negative ions in the electrolyte 4330, and the potential applied to the positive electrode (plate 4310) attracts positive ions. The separator 4340 is arranged to prevent electric charges moving between the two plates 4310 and 4320. Supercapacitor 4300 is configured to supply energy to a load (not shown).

One or more components of the supercapacitor 4300 can be formed from nanowires, tapes, foils formed from modified ELR films and thin films of modified ELR films. For example, one or more of plates 4310, 4320 may be modified E as described herein.
Can be formed from LR material. Use of modified ELR material is super capacitor 430
0 and various features and advantages can be provided for the various applications in which the supercapacitor 4300 is used. For example, a supercapacitor 4300 containing a modified ELR material is expected to be a nearly ideal energy storage device, i.e. a device that exhibits nearly 100% efficiency.

The configuration of the supercapacitor 4300 is quite specific for the application in which the supercapacitor 4300 is used and the particular application, and the desired performance characteristics and other factors drive the design and configuration of the supercapacitor 4300. For example, many applications that require short power pulses or low power support for critical memory systems can benefit from the supercapacitor 4300. In another example, the supercapacitor 4300 Pcan is used as a power assisted vehicle during acceleration and hill climbing and as a vehicle for recovering braking energy. The supercapacitor 4300 can be part of a regenerative braking system for a vehicle that, for example, captures and stores a large amount of electrical energy (generated by play) and quickly releases the electrical energy for reacceleration. This feature is expected to significantly improve fuel economy under stop-and-go city driving conditions and other driving conditions. Therefore, super capacitor
The specific value and number of 4300 components need not be described here because they vary from device to device by application. We can use modified ELR materials in systems associated with virtually all supercapacitors known in the art, modified ELR materials, batteries, and Those skilled in the art who have been provided with various examples of principles can use other supercapacitors with one or more components formed entirely or partly from modified ELR materials without undue experimentation. I believe it can be realized.

Additional energy storage device By using the ELR material modified in the energy storage device as described above, the energy storage device is expected to provide improved performance compared to conventional energy storage devices. The Furthermore, as described above, the modified ELR material has a temperature dependent performance. As a result, energy storage devices using the modified ELR materials described herein also depend on temperature. The temperature change affects the magnetic field penetration into the strip conductor, which affects the superconducting penetration depth as described above. Such changes in material can be modeled based on the response behavior of the modified ELR material to temperature, as described herein, or can be derived empirically. Note that by using a modified ELR material, the resistance of the line is negligible, but the resistance can be adjusted based on the temperature, as shown in the temperature graphs shown herein. Thus, the design and configuration of the energy storage device can be adjusted to compensate for the temperature, or the performance of the energy storage device can be adjusted by changing the temperature.

Although individual energy storage devices are shown, the energy storage devices can be coupled together to form an energy storage grid or array. Multiple component systems that are capable of many configurations of energy storage devices, similar to other categories of energy storage devices described herein, that are formed at least in part from an energy storage array or modified ELR material This is a design matter of the designer. The modified ELR materials described herein are complex, including two or more combinations of the energy storage devices and principles described herein, even if their combination is not explicitly stated. Can be used in energy storage systems. Indeed, such complex energy storage systems can use two or more different or non-uniform energy storage devices that are not simply the same or uniform energy storage devices. Such a system or array is a fairly homogeneous energy storage device, all made of modified ELR material, or different types of energy storage devices, some of which are made of non-ELR material Or a combination of different materials with different devices. Thus, complex energy storage systems or arrays may use two or more energy storage devices formed from two or more homogeneous energy storage devices formed primarily from modified ELR materials. Or two or more heterogeneous energy storage devices formed primarily of modified ELR material may be used and / or from both conventional conductors and modified ELR material Two or more homogeneous / heterogeneous energy storage devices formed may be used.

Although specific embodiments of energy storage devices that use components that are formed in whole or in part from modified ELR materials are described herein, those skilled in the art will recognize signals to conduct current. As described above, wherein the energy storage configuration is at least partially formed to receive, store various forms of energy, or transmit or modify electromagnetic signals. It will be appreciated that components such as components can be used substantially. Known energy storage devices and systems make extensive use of conductive elements and other elements, some of which have been described above. The modified ELR material can be used with conductive elements in a circuit, but the modified ELR material promotes the propagation of energy or signals along its length or region, and It may be more appropriate to state it depending on the definition. As a result, it is impossible to enumerate and detail all possible energy storage devices and systems that can use components formed from modified ELR materials. Of course, the conductors described herein are modified EL
All or part of the R material can be formed.

Although several suitable geometries, interconnections, circuits, and configurations are shown and described herein for some energy storage devices and systems, many other shapes, interconnections , Circuits, and configurations are possible. The inventors can use modified ELR materials in systems associated with virtually all energy storage devices known in the art, modified ELR materials, batteries, And other energy storage having one or more components formed entirely or in part from modified ELR materials without undue experimentation by those skilled in the art provided with various examples of principles A device could be realized.

In some embodiments, an energy storage device that includes a modified ELR material can be described as follows.

A device having at least one energy storage device configured to receive and store energy from an external power source, wherein the energy storage device is formed from a modified very low resistance (ELR) material. Or the component incorporating at least a portion of the modified ELR material, the modified ELR material comprising a first layer of ELR material and the ELR material of the first layer. An apparatus comprising a modified ELR material having a second layer of bonded modifying material.

An apparatus comprising at least one electrochemical cell configured to convert chemical energy into electrical energy, the electrochemical cell having a modified very low resistance (EL
R) a component formed from a material or the component at least partially incorporating the modified ELR material, the modified ELR material comprising a first layer of ELR material; A second layer of a modifying material bonded to the ELR material of the first layer;
A device characterized in that it comprises a modified ELR film having:

A capacitor having a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor; At least one of a conductor and the second conductor is formed of a modified very low resistance (ELR) material, the modified ELR material comprising: a first portion of ELR material; And a second part made of a modifying material chemically bonded to the ELR material of the first part.

A method comprising: receiving energy from a power source; converting the energy into electrical energy; and storing the electrical energy in an energy storage device coupled to the power source, the energy The storage device, or the transmission line between the power source and the energy storage device, is formed of a modified very low resistance (ELR) material or at least partially incorporates the ELR material And the modified ELR material is formed from a modified ELR film having a first layer made of ELR material and a second layer made of the modifying material bonded to the ELR material of the first layer. A method characterized by that.

An apparatus, comprising: a flywheel mounted in a housing and operably coupled to a generator; and at least one magnetic bearing adjacent to the flywheel and configured to engage the flywheel. And the magnetic bearing is formed of a modified very low resistance (ELR) material or at least partially incorporating the ELR material, the modified ELR material comprising an ELR material An apparatus formed from a modified ELR film having a first layer and a second layer of a modifying material bonded to the ELR material of the first layer.

An apparatus comprising at least one electrochemical cell configured to convert a reactant from an external power source into electrical energy, wherein the electrochemical cell is a modified very low resistance (ELR) material Or a component that at least partially incorporates the modified ELR material, the modified ELR material comprising: a first layer of ELR material; and the ELR of the first layer A device characterized in that it is formed from a modified ELR film having a second layer of modifying material coupled to the material.

A system having an energy storage component coupled between one or more external power sources in a distribution network, wherein the energy storage component is formed from a modified very low resistance (ELR) material Or an element that at least partially incorporates the modified ELR material, wherein the modified ELR material is coupled to a first layer of ELR material and the ELR material of the first layer And a modified ELR film having a second layer of modified material.

A magnetic energy storage device comprising: a coil formed from a modified very low resistance (ELR) material or the coil at least partially incorporating the modified ELR material; and the coil desired A cooling component configured to maintain at a temperature, wherein the modified ELR material comprises a first layer of ELR material, and the ELR of the first layer
A device characterized in that it is formed from a modified ELR film having a second layer of modifying material coupled to the material.

A supercapacitor comprising: a first conductive plate; and a second conductive plate adjacent to the first conductive plate and spaced from the first conductive plate. And at least one of the first conductive plate and the second conductive plate is formed from at least a part of a modified ELR material, and the modified ELR material is made of an ELR material. Part 1 and
A second part made of a modifying material chemically bonded to the ELR material of the first part, wherein the supercapacitor is further between the first conductive plate and the second conductive plate. And a dielectric separator disposed between the first conductive plate and the second conductive plate. A supercapacitor comprising: an electrolyte disposed on the first conductive plate; and a dielectric separator disposed between the first conductive plate and the second conductive plate.

Chapter 16 Current Limiter Made of ELR Material Refer to Figure 1-36 and Figure 37-Q to Figure 50-Q for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Very low resistance (EL, such as modified, apertured, and / or other new ELR materials
R) Various types of current limiters using induction coils formed from materials are described herein. While various examples of the present invention have been described with reference to “modified ELR materials” and / or various configurations of modified ELR materials (such as modified ELR films), Any of the improved ELR materials described in, for example, modified ELR materials according to various embodiments of the present invention (
It is understood that any modified ELR material 1060), apertured ELR material, and / or other new ELR materials can be used. As described herein, these improved ELRs
The material has at least one improved operating characteristic, and in some examples, the improved operating characteristic includes operating in an ELR state at temperatures above 150K.

The current limiter disclosed herein is suitable for a variety of different scale applications. For example, these applications range from small-scale applications that limit fault current at the component or chip level to medium-scale applications that can limit fault current at the system or device level, and power distribution or transmission It can range up to large scale applications that limit fault current at the level. Before providing a detailed description of the new current limiter, details regarding some applications of the current limiter are provided.

For small scale applications, FIG. 37-Q is a schematic diagram showing a chip or other monolithic structure including a current limiting device using ELR material. Chip 3700 includes circuit 3710 to be protected by current limiter 3705. The protection circuit 3710 can consist of one or more individual circuits or circuit components. In the embodiment of FIG. 37-Q, the current limiter 3705 is arranged in series with the protection circuit 3710. However, those skilled in the art can connect the current limiter in any of a number of possible configurations, including connecting to the protection circuit in parallel via an electric or magnetic field, or coupling to the protection circuit. Will understand.

By using an on-chip current limiter, the chip can obviously benefit from improved protection from failure, but may enjoy many additional benefits. Chip 3700
By using ELR material in the chip, the chip can enjoy the high density of the circuit. For example, by using ELR material, the chip has less heat loss and more current can be transferred from conductor to conductor, thus allowing thinner conductors to be used. Conductors and interconnects can be made from ELR materials. Further, since the insertion loss is greatly reduced, the signal can be transmitted without being amplified. Further, the chip can be fabricated using minimum scale integrated circuit manufacturing techniques such as 45 nm or smaller minimum feature size techniques.
Because the functional size is reduced, circuit designers can accelerate physical design because there are fewer constraints based on conductor layout and length.

For medium-scale applications, FIG. 38-Q shows a system 3800 that includes a current limiter housed in a housing and connected to a device such as a consumer device. For example, the current limiter 3825 can be on a board (such as a PCB) and housed in a single housing 3820 to form a box or appliance to protect all electrical equipment connected thereby. . For example, the housing 3820 may include a power cord having a female connection at one end and a male connection at the opposite end. In this example, a consumer connects an electrical device (such as a TV 3805) to a current limiter housing 3820.
Can be plugged into the female side 3810 and the male outlet 3840 can be plugged into the electrical outlet 3830. The electrical device 3805 will then be protected from fault current by a current limiter 3825.

Although a television 3805 is shown, those skilled in the art will appreciate that the current limiter housing 3820 can be connected to a variety of consumer equipment such as personal computers, stereos, alarm clocks, kitchenware, power tools and the like. I will. The current limiter housing 3820 can also be used with other devices such as expensive and sensitive medical and scientific equipment. Further, those skilled in the art can change the connection to the current limiter housing 3820 and the current limiter housing,
It will be understood that the invention is not limited to connecting to a standard power outlet.

Current limiters provide important services in large-scale applications such as protecting equipment on the power grid.
Grid fault current limiters are individuals or businesses that may be affected by a single fault on the grid (
This is particularly important not only because of the large number of hospitals, airports, commercial production plants, etc., but also because the equipment present on the power grid is due to its large and expensive features.

FIG. 39-Q is a diagram of a power network including a current limiter that can use modified ELR materials.
The power plant 3910 generates electricity that energizes the power grid. The power plant may be coal, geothermal, nuclear, methane, hydro, wind, solar, or any type of power plant that can generate power for use in the power grid. After power generation, the voltage from the power plant 3910 is boosted (or "stepped up") to a high voltage suitable for transmission over long distances, eg 230 kV
) The voltage step-up can be performed at a high voltage switching station 3915 including a step-up transformer 3920. The step-up transformer boosts the voltage with a series of coils that wrap the core.

The boosted voltage is transmitted to the substation 3930 via the high voltage transmission line 3925. Substation 3930 includes a step-down transformer 3935 and reduces the voltage to a level suitable for distributing power to customers, such as 13.3 kV. The distribution voltage is then carried on distribution line 3937 to various customers such as home 3940, school 3945, or hospital 3950. Distribution network 3900 includes a current limiter 3955 coupled between step-up transformer 3920 and step-down transformer 3930. In this configuration, the current limiter 3955 has a fault that may occur downstream, such as a fault in the high voltage transmission line 3925 (between the current limiter 955 and the substation 3930), a substation 3930 (in the substation 3930). Step-down transformer 3935 and other components) failure, distribution line 3937 failure, customer (house 3940, school 3945, hospital 3950 failure, etc.) step-up transformer 3920 and power plant 3910 can be protected as well. Current transformer 3955 is a high voltage transmission line 3925 (between current limiter 3955 and substation 3930), substation 3930 (substation) due to possible upstream failures including step-up transformer 3920 and power station 3910 failure. Including step-down transformer 3935 and other components in 3930), distribution line 3937, customers (home 3940, school 3945, hospital 3950) can be protected.

In FIG. 39-Q, the current limiter 3955 is disposed between the step-up transformer 3920 and the step-down transformer 3935, but those skilled in the art will recognize that the current limiter 3955 is between the power plant 3910 and the step-up transformer 3920 or the step-down transformer 3935.
Understand that current limiter 3955 (and multiple additional current limiters) can be placed at one or more different locations on power grid 3900, including between customer 3940, 3945, and 3950 it can. In addition, those skilled in the art will recognize that one or more current limiters are illustrated in power plant 3910, in high voltage switch station 3915, or in substation 3930 (shown below in FIGS. 40A-Q, 40B-Q). Explained in)
It will be understood that it can be arranged.

FIGS. 40A-Q and 40B-Q show schematics of two possible embodiments of a substation 3935 incorporating a current limiter that can use modified ELR materials. In the first embodiment 4000 shown in FIGS. 40A-Q, the current limiter 4020 is disposed in the substation 3930 and coupled to the step-down transformer 3935. Step-down transformer 3935 is coupled to power plant 3910 via high-voltage line 3925 and step-up transformer 3920 disposed in high-voltage switchgear 3915. The current limiter 4020 is further connected to the house 3940 and the school 3945 via the substation feeder breakers 4030 and 4044, and further coupled to the hospital 3950 via the substation feeder breakers 4030 and 4043. Current limiting device 4020 may be coupled to additional consumers via substation feeder breakers 4041, 4042. In the embodiment of FIGS. 40A-Q, current limiter 4020 protects multiple components associated with substation 3930. Multiple components to be protected are house 3940,
School 3945, hospital 3950, and other consumers connected to substation feeder breakers 4041, 4042, all of which are loaded through substation feeder breaker 4030 before passing through current limiter 4020, respectively. Through.

A second embodiment 4050 shown in FIG. 40-Q includes a step-down transformer 3935 that is coupled to a power plant 3910 via a high-voltage power transmission line 3925 and a step-up transformer 3920 in a high-voltage switchgear 3915. Current limiter 4070 is coupled to hospital 3950 via substation feeder breakers 4080, 4093. House 3940 and school 3945 are coupled to step-down transformer 3935 via substation feeder breakers 4094 and 4080, but not to current limiter 4070. The step-down transformer 3935 can be coupled to additional consumers via substation feeder breakers 4091, 4092. In the example of FIGS. 40B-Q, current limiter 4070 will protect hospital 3950 from fault currents, but will not protect home 3940 or school 3945. One skilled in the art will appreciate that the current limiter can be placed in various locations to protect as many or as few specific components as desired. This ability to place a current limiter at a location to protect a specific customer or a specific component
Enables power utility companies to meet the dynamic needs of electrical transmission and distribution systems.

The current limiter disclosed herein may be several different types of current limiters that use different methods to limit fault current. This document describes two main types of current limiters that can use modified ELR materials, resistive current limiters and inductive current limiters. Also described herein is a third reactor type current limiter, such as a supersaturated reactor type current limiter, that can be formed from a modified ELR material. Three types of fault current limiters (
Resistive, inductive, supersaturated reactor types) are described, but in addition to these three types of current limiters, those of ordinary skill in the art will recognize that various additional current limiters are formed from modified ELR materials. You will understand that you get.

FIG. 41-Q is a schematic diagram of a resistive current limiter that operates by increasing the resistance of the current path to a level that inhibits current flow at the fault level. In particular, the resistive current limiter 4100 may be realized with a modified ELR material having a variable resistance or variable impedance 4110 depending on the superconductivity or ELR state of the ELR material at a given time, as shown in FIG. 41-Q. Good. Alternatively or additionally, the modified ELR material may be doped with an appropriate element or compound to adjust the resistivity of the modified ELR material, thereby providing a variable or selected resistance. it can.

As shown, resistive current limiter 4100 is comprised of a modified ELR material placed in series with circuit 4115 to be protected. When no fault condition exists (during normal operation), the current flowing through the modified ELR material remains below the critical current density of the modified ELR material. As a result, the modified ELR material is superconducting or ELR with little or no resistance 4110.
The state remains. This allows the circuit 4115 to be protected to operate efficiently without adding resistors or impedances that reduce the efficiency of the circuit or system to be protected. When fault conditions exist, the current flowing in the modified ELR material increases to a level that exceeds its critical current density. As a result, the modified ELR material is quenched (loses the superconducting or ELR state) and transitions to the non-superconducting state. This transition to the non-superconducting state is
Causes a rapid rise in the resistance or impedance 4110 of the circuit 4115 to be protected. As a result, the large resistance or impedance helps limit the fault current flow in the circuit 4115 to be protected. The current limiting resistor 4100 can also include a shunt 4120 that absorbs energy in the event of a fault.

Figure 42-Q shows a resistive current limiter 42 that can be used in a variety of applications, including placement on the grid.
00 is shown. Resistive current limiter 4200 includes a housing or shell 4215 coupled in series with line 4205 and load 4210. Line 4205 can be formed from conventional or modified ELR material and can be input to current limiter shell 4215 via external connection 4245. An input conductor 4220 formed of conventional or modified ELR material is coupled between the external connection 4245 and the portion of the modified ELR material 4230 that is present in the current limiter shell 4215. The opposite end of ELR material 4230 is an output conductor 4225 that can be formed of conventional or modified ELR material
Combined with Output conductor 4225 is coupled to external connection 4250, which in turn is loaded 4210
Connected to.

The shunt impedance 4240 can be connected in series between the line 4205 and the load 4210. The cooling unit 4235 is also equipped with ELR material 421 that has been changed to operating temperature or ambient temperature.
To cool 5, it can be coupled to a current limiter shell 4215. Modified ELR material 4215
Is capable of operating in ELR conditions at higher temperatures than normal HTS materials (such as the room temperature described herein), but the cooling unit 4235 has excessive heat generated by the surrounding high voltage transmission device. It may be necessary to cool the modified ELR material to its operating temperature from excessive heat generated by exposure to ambient heat or sunlight on warm days. Also changed ELR
By controlling the temperature of the material, the performance and response of the current limiter can be adjusted as described in more detail herein.

The operation of the resistive current limiter 4200 is consistent with the principles of the resistive current limiter previously described herein. In particular, resistive current limiter 4200 is placed in series with line 4205 and load 4210. If no fault condition exists (normal operation), the current flowing through the modified ELR material 4230 remains below the critical current density of the modified ELR material. As a result, the modified ELR material remains in a superconducting or ELR state with little or no resistance or impedance. This allows devices on the distribution network to operate efficiently without adding resistance or impedance that degrades the performance of the distribution network. If a fault condition exists, the current flowing through the modified ELR material 4230 increases to a level that exceeds the critical current density of the modified ELR material. As a result, the modified ELR material loses the superconducting or ELR state and transitions to a non-ELR state. This transition to the non-ELR state causes a sudden increase in resistance or impedance of the part of the distribution network to be protected. As a result, a large resistance or impedance limits the flow of fault current (and most of the fault energy is transferred to the absorbing shunt 4240).

FIG. 43-Q is a schematic diagram of an inductive current limiter that uses a transformer to limit the fault current to insert impedance into the circuit to be protected. As shown in FIG. 43-Q, the inductive current limiter can be realized as a transformer. As shown in the figure, the induction current limiter 4300 includes a primary winding coil 4310 and a secondary winding coil 4315. The circuit 4320 to be protected is connected in series with the primary coil 4410. Secondary coil 4315 is part of a closed loop of modified ELR material (a circuit connected to the primary coil may be partially or entirely composed of modified ELR material). Reference to a single coil, but alternative systems include multiple primary induction coils, multiple coils
Secondary induction coils or both can be used.

In the absence of a failure condition (normal operation), the primary coil generates a magnetic field that is ejected from a short number of turns of the secondary coil that remains below the critical field density (He) of the modified ELR material.
As a result, the modified ELR material in the secondary circuit 4325 remains in the superconducting or ELR state, has little or no resistance, and exhibits little or no resistance and impedance to the first inductor. This allows the circuit 4320 to be protected (connected in series with the primary coil) to operate efficiently without adding impedance and resistance losses that reduce the performance and efficiency of the circuit or system to be protected. To do. However, if a fault condition exists, the increased magnetic field penetrates the secondary coil that couples to the core, and the magnetic field effectively introduces inductance into the secondary circuit that reflects the primary coil. This transition to the non-ELR state causes a sudden rise in resistance 4325 in the secondary circuit, which is then reflected in the primary coil along with the loss of the core, which is the resistance. As a result, the impedance and resistance reflected in the primary coil acts to limit the flow of fault current in the circuit 4320 to be protected (connected in series with the primary).

FIG. 44-Q shows an inductive current limiter 4400 that can be used in various applications. A primary winding or coil 4405 formed of a conventional material or a modified ELR material is connected in series with the circuit 4420 to be protected. The secondary coil 4410 is formed from a closed loop or shorted turn of modified ELR material that acts as a shield or screen within the primary coil 4405 (instead, the secondary coil 4410 is coupled to the primary coil 4405 But not necessarily in the primary coil). In the example of FIG. 44-Q, the primary coil is wound on a tube formed from HTS or modified ELR material and operates as a single turn secondary winding. The secondary coil can be formed around a core 4415 made of several types of materials including ferromagnetic materials such as iron as described herein.

The operation of the induction current limiter 4400 is consistent with the principle of the induction current limiter described herein. When no fault condition exists (under normal operation), the primary coil 4405 generates a magnetic field that is less than or equal to the critical field strength He of the cylinder of the modified ELR material 4410. As a result, the magnetic field is discharged from the secondary coil, and the magnetic field functions as a shield and a screen. As a result, the modified ELR material in the secondary circuit 4410 maintains a superconducting or ELR state, has little or no resistance, and the inductive impedance reflects in the primary coil 4405. This means that the circuit to be protected 44
20 (connected in series with the primary coil) reduces efficiency and allows it to operate efficiently without adding impedance that reduces performance and resistance. However, if a fault condition exists, the current flowing on the primary side generates a magnetic field strength that exceeds the critical field strength He of the modified ELR material. As a result, the modified ELR material 4410 in the secondary circuit transitions to a non-ELR state. This transition to the non-ELR state then causes a sudden increase in the resistance of the secondary circuit 4410,
This in turn reflects the inductive impedance for the primary coil 4405. As a result, the large impedance reflected in the primary coil 4405 serves to limit the flow of fault currents in the circuit 4420 to be protected (connected in series with the primary coil 4405). In other words, when there is no failure condition, the magnetic field generated by the primary coil does not couple with the secondary coil and acts as a shield or screen. Therefore, the primary side has a low impedance. In the event of a failure, the magnetic field beyond He penetrates the shield, the secondary circuit becomes a resistance, and the inductive impedance of the core and its loss are introduced into the circuit. The advantage of this type of current limiter is that the resistance and inductance under fault conditions can be individually adjusted to the line and load characteristics.

FIG. 45DC-Q is a schematic diagram of a saturable reactor type current limiter that limits the fault current by saturating the inner load-bearing AC coil of the core with DC magnetic flux. The reactor current limiter 4500 includes an AC voltage source 4510 connected in series with two AC coils 4515 and a load 4520, where at least one of the AC coils 4515 and the load is entirely or one from a modified ELR material. The part is composed. Reactor current limiter 4500 further includes a DC voltage source 4530 connected in series with a DC coil 4535 formed from a modified ELR material. The AC coil is connected to the DC coil via the core. The core can be formed of a number of possible materials, including a ferromagnetic material such as steel, as described herein. The DC coil is part of a closed loop and is composed of modified ELR material (some or all of the DC coil and associated circuitry may also be composed of modified ELR material) . Referring to a single coil, an alternative system can use multiple coils for DC coils, AC coils, or both.

When no fault condition exists (under normal operation), DC coil 4535 causes core saturation, where the core inductively couples DC coil 4535 with AC coil 4515. Saturated core is AC
Coil 4515 has a low impedance, allowing current to flow normally. However,
If a fault condition exists, the magnetic flux rises in the AC coil 4515, causing the core to become unsaturated. Core desaturation immediately increases the AC coil impedance and then limits the fault current.

FIG. 46-Q shows a saturable reactor type fault current limiter 4600 that can be used in various applications.
Saturable reactor type current limiter 4600 includes two AC coils 4610 and 4615, at least one of which is connected to an AC load (not shown). Saturable reactor type current limiter 4610 further includes a DC coil 4620 (not shown) connected in series with a DC voltage source. AC coils 4610 and 4615 are coupled to DC coil 4620 via cores 4625 and 4630. Core 4625, 46
30 can be formed of a number of possible materials including ferromagnetic materials such as steel as described herein. DC coil 4620 is part of a closed loop made of modified ELR material (D
Some or all of the C-coil and associated circuitry may also be composed of modified ELR materials).
Referring to a single DC coil and two AC coils, an alternative system can use one or more coils for a DC coil, an AC coil, or both.

When no fault condition exists (under normal operation), the DC coil 4620 causes the cores 4625, 4630 to saturate, and the cores 4625, 4630 couple to both the DC coil 4620 and the AC coils 4610, 4615.
Saturated cores 4625, 4630 lower the impedance of AC coils 4610, 4615, allowing current to flow normally in the AC circuit to be protected. However, if a fault condition exists, the magnetic flux increases in the AC coils 4610 and 4615, causing the cores 4625 and 4630 to become unsaturated.
The unsaturation of the cores 4625, 4630 immediately increases the AC coil 4610, 4630 impedance and then limits the fault current in the AC circuit to be protected.

The current limiters described herein may be implemented using inductors and other components that are at least partially formed from modified ELRs or other materials, as described below.
Inductors with ELR components

Inductors such as air core or magnetic core inductors have been described that include components formed from modified very low resistance (ELR) films. In some examples, the inductor includes a core composed of a modified ELR film and a nanowire coil. In some examples, the inductor includes a core made of a modified ELR film and a tape or foil coil. In some examples, the inductor is formed using a thin film modified ELR film. Modified ELR films exhibit very low resistance to current at temperatures higher than normal temperatures associated with current high temperature superconductivity (HTS) and improve the operating characteristics of rotating machinery at these higher temperatures .

In some examples, the modified ELR film is the type of material, the application of the modified ELR film, the size of the component that uses the modified ELR film, the operation of the device or machine that uses the modified ELR film Manufactured based on requirements. Thus, the material used as the base layer of the modified ELR film and / or the modified EL in the manufacture and design of the inductor
The material used as the layer to modify the R film can be selected based on various considerations, desired operating characteristics, and / or manufacturing characteristics.

Various devices, applications, and / or systems can use modified ELR inductors. In some examples, a tuned or resonant circuit and its application uses a modified ELR inductor. In some examples, transformers and their applications use modified ELR inductors. In some examples, energy storage devices and their applications use modified ELR inductors. In some examples, current limiting devices and their applications use ELR inductors.

FIG. 47-Q shows an air core inductor 4700 having a modified ELR film. Inductor 4
700 includes a coil 4710 and an air core 4720. When coil 4710 carries current (eg, in a direction toward the right side of the page), a magnetic field 4730 is generated in core 4720. The coil is at least partially formed of a modified ELR film, such as a film having a base layer of ELR material and a modifying layer formed on the base layer. A variety of appropriately modified ELR membranes are described in detail herein.

A battery or other power source (not shown) applies a voltage to the modified ELR coil 4710 and causes current to flow through the coil 4710. Coil 4710 formed with a modified ELR film has little or no resistance to current flow at temperatures higher than those used in conventional HTS materials, such as room temperature or ambient temperature (˜21 ° C.), for example. No resistance at all. The current flow in the coil is
Generate a magnetic field within the core 4720, which can be used to store energy, transfer energy, and limit energy.

Since the inductor 4700 includes a coil 4710 formed of ELR material, the inductor can behave like an ideal inductor. Here, the coil 4710 has little or no loss due to winding resistance or series resistance normally found in inductors with conventional conductive coils (such as copper coils), regardless of the current through the coil 4710. That is, the inductor 4700 can exhibit a very high quality (Q) factor (close to infinity, etc.). The quality (Q) factor is the ratio of inductive reactance to resistance at a given frequency, ie Q =
(Inductive reactance) / resistance.

In some examples, the modified ELR coil is a transition temperature (˜80-135) of conventional superconducting materials.
K) and very low resistance to current flow between room temperature (~ 294K). In these examples, the inductor is a cooling system (not shown) such as a cryocooler or cryostat used to cool coil 4710 to the critical temperature of the modified ELR film type used by coil 4710. ) Can be included. For example, the cooling system can cool the coil 4710 to the same temperature as the liquid freon temperature, to the same temperature as the temperature of ice or ice melting, or to the same temperature as other temperatures described herein. It may be a system. That is, the cooling system can be selected based on the type and structure of the modified ELR film or the material used in the coil 4710.

In some examples, air core 4720 is self-supporting. In another example, air core 4720 is formed from a non-magnetic material (not shown) such as plastic or ceramic. The material and shape of the core can be selected based on various factors. For example, choosing a core material that has a permeability higher than that of air generally increases the density of the induced magnetic field 4730,
Thereby, the inductance of the inductor 4700 is increased. In another example, the choice of core material may be governed by the desire to reduce core loss in high frequency applications. One skilled in the art will appreciate that the core may be formed with a different number of materials and a different number of shapes to obtain the desired and / or operational characteristics.

As is known in the art, the configuration of the coil 4710 can affect certain operating characteristics such as inductance. For example, the number of turns of the coil, the cross-sectional area of the coil, the length of the coil, etc. may affect the inductance of the inductor. Inductor 47
00 shows one configuration, but various to reduce unwanted effects (skin effect, proximity effect, parasitic capacitance, etc.) in order to obtain specific operating characteristics (inductance value, etc.) Can be configured in various ways.

In some examples, the coil 4710 can include multiple turns parallel to each other. In some examples, the coil can include several turns at different angles. Thus, the coil 4710 can be formed in a variety of different configurations. For example, a honeycomb or basket weave pattern that is continuously wound in a cross shape at various angles to each other, a spider web pattern composed of flat spiral coils spaced from each other, and various strands are insulated from each other It can be formed with litz wire.

In addition to air-core inductors, magnetic core inductors such as inductor 4800 can also use modified ELR films as described below. Figure 48-Q shows the modified ELR
FIG. 11 is a schematic diagram showing a magnetic core inductor 4800 using a film. Inductor 4800, coil 4810
And including a magnetic core 4820 such as a core formed from a ferromagnetic or ferromagnetic material. Similar to inductor 4700 in FIG. 47-Q, magnetic field 4830 is generated in core 4820 when current is carried by coil 4810. The coil is at least partially formed from a modified ELR film, such as a film having a base layer of ELR material and a modifying layer formed on the base layer. Various suitably modified ELR films are described in detail herein. Coil 4810 formed with modified ELR film
Exhibits little or no resistance to current flow at temperatures higher than those used in conventional HTS materials, such as room temperature or ambient temperature (˜21 ° C.). The current flow in the coil is
A magnetic field 4830 is generated within the core 4820, which can be used to limit energy, to transfer energy, to store energy.

A magnetic core 4820 formed from a ferromagnetic or ferromagnetic material can increase inductance. The permeability of the magnetic material in the generated magnetic field 4830 is higher than the permeability of air, thus increasing the inductance of the inductor 4800 to better support the formation of the magnetic field 4830 by magnetization of the magnetic material. For example, a magnetic core increases inductance by a factor of 1,000 or more.

The inductor 4800 can use a variety of different materials within the magnetic core 4820. In some examples, the magnetic core 4820 is formed of a ferromagnetic material such as iron. In some examples, the magnetic core 4820 is formed of a ferromagnetic material such as ferrite. In some examples, the magnetic core 4820 is formed of a laminated magnetic material such as a silicon steel laminate. One skilled in the art will appreciate that other materials can be used depending on the needs and requirements of the inductor 4800.

Also, the magnetic core 4820 (and the inductor 4800) can be configured in a variety of different shapes. In some examples, the magnetic core 4820 may be a rod or a cylinder. In some cases, magnetic core 4820 may be a toroid. In some cases, the magnetic core 4820 may be movable, allowing the inductor 4800 to achieve a variable inductance. Those skilled in the art will appreciate that other shapes and configurations can be used depending on the needs and requirements of the inductor 4800. For example, the magnetic core 4820 can be configured to limit various deficiencies such as core loss due to eddy currents and / or hysteresis and / or inductance nonlinearity.

Thus, in some examples, using a modified ELR material and / or a component such as an ELR film to form coil 4710 of inductor 4700 or coil 4810 of inductor 4800 reduces resistance to current in the coil. Alternatively, the Q value of the inductor can be increased by removing the inductor.

Manufacture and / or Formation of ELR Film Inductors As described herein, in some examples, an inductor coil is a modified EL
Since it is made of R material, it has a very low resistance to carry current. 49A-Q are photographs showing an inductor 4900 that uses a modified ELR nanowire. Inductor 4900
It includes a coil 4902 formed as a modified ELR nanowire consisting of ELR components described herein, such as a modified ELR film.

When forming an ELR wire, a large capacity wire may be formed by sandwiching a plurality of ELR tapes or foils together. For example, the coil can include a support structure and one or more ELR tapes or foils supported by the support structure.

In addition to ELR wires, inductors can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 50 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, ELR
The material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

In addition to nanowires, modified ELR tapes or foils can be utilized with the inductors and devices described herein. FIGS. 49B-Q show an inductor 4910 using a modified ELR tape or foil. Inductor 4910 includes a core 4912 such as an iron core and a coil 4914 formed of a modified ELR tape.

There are various techniques for producing and manufacturing tapes and / or foils of ELR material. In some instances, this technique can be applied to flexible metal tapes coated with buffer metal oxides.
Depositing YBCO or other ELR material to form a coated conductor. During processing,
The texture can be introduced into the metal tape using a rolling assist, a biaxial texture substrate (RABiTS) process or the like. Alternatively, a textured ceramic buffer layer may be deposited on an untextured alloy substrate using an ion beam assisted deposition (IBAD) process. The addition of the oxide layer prevents metal diffusion from the tape into the ELR material. To produce ELR tape, chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (ALL-M)
BE), and other techniques such as other solution deposition techniques may be utilized.

The thin film inductor can also utilize the ELR components described herein. 49C-Q are schematic diagrams illustrating an inductor 4920 using a modified ELR thin film component. Inductor 4920 is a modified ELR coil 4 formed on printed circuit board 4924
922 and an optional magnetic core 4926. Coil 4922 may be a modified ELR film etched into substrate 4924. The coil 4922 can be formed in various configurations and / or various patterns depending on the needs of the device or system using the inductor. Further, the optional magnetic core 4926 may be etched into the substrate 4924 as shown, or a plate core (not shown) disposed above and / or below the coil 4922.
It may be.

Thus, modified ELR films are tapes, foils, rods, strips, nanowires, thin films, and other shapes, geometries that can carry or move current from one point to another to generate magnetism It may be formed into a geometric shape or structure.

In some examples, the type of material used in the modified ELR film can be determined by the type of application utilizing the film. For example, in some applications, a modified ELR material having a BSCCO ELR layer can be utilized, while in other applications, a YBCO layer can be utilized. That is, the modified ELR materials described herein may be formed in a specific structure (such as a tape or nanowire) based on the type of machine or component that utilizes the modified ELR film, It may be formed from a specific material (YBCO, BSCCO).

Various processes can be used in the manufacture of inductors, such as inductors 4900, 4910, and / or 4920. In some examples, the core is formed, maintained, received, and / or arranged. The core can take various shapes and configurations. Examples of configurations are cylindrical rod, single “I” shape, “C” or “U” shape, “E” shape, pair of “E” shape, pot shape, toroid shape, annular or bead shape, planar shape Etc. The core can be formed of a variety of nonmagnetic and magnetic materials. Exemplary materials include iron or soft iron, silicon steel, various laminate materials, silicon alloys, carbonyl iron, iron powder, ferrites, ceramics, glass, amorphous metals, ceramics, plastics, air, and the like.

Also, a coil, such as a coil formed from a modified ELR nanowire, tape, or thin film, is configured into a desired shape or pattern and then bonded to the core that is formed or maintained . In some examples, the core is not present and the modified ELR nanowire is configured into the desired shape or pattern. In some examples, the modified ELR nanowire coil is etched directly into the printed circuit board and the planar magnetic core is positioned relative to the etched coil. Those skilled in the art will appreciate that other manufacturing processes may be utilized when manufacturing and / or forming the inductors described herein.

Although single current limiters are generally described above for each application, two or more current limiters are provided within a given chip, housing, grid substation, or other environment. May be. In practice, a given environment can use one or more chips, or an implementation that includes one or more disclosed current limiters, and then one or more And can be incorporated into a large-scale environment such as in a distribution network. Of course, the current limiter described herein can be manufactured with both ELR and conventional materials.

Additional current limiter applications including ELR components The current limiters described above are suitable for use in many applications, from on-chip to use in distribution networks. By using the ELR material modified in such a current limiter, the current limiter exhibits orders of magnitude lower resistance than the best conventional conductors under similar conditions.

Also, such a current limiter can be manufactured in a smaller and more compact form, such as on a chip as described above. Such a chip may include other components such as logic and analog circuits. By using an on-chip current limiter, the chip can benefit from clearly improved protection and performance. EL in chip
By using R material, the chip can enjoy a greater density of circuits. For example, by using ELR material, the chip enjoys less heat generation, and thinner conductors can be used because more current can travel with the same line width. Conductors and interconnects can be made from ELR materials. Further, since the insertion loss is greatly reduced, the signal can be transmitted without being amplified.

As mentioned above, the modified ELR material has a temperature dependent performance. Consequently, the current limiters described herein that use modified ELR materials are also temperature dependent. Temperature changes affect the magnetic field penetration into the strip conductor and affect the superconducting penetration depth. Such material changes can be modeled based on the response behavior of the modified ELR material to temperature, as described herein, or can be derived empirically. Note that the resistance of the line is negligible by using a modified ELR material, but the resistance can be adjusted based on temperature, as shown in the temperature graph shown herein. Thus, the current limiter design can be adjusted to compensate for temperature, or the current limiter operation can be adjusted by changing the temperature.

Referring to FIG. 50-Q, a system 5000 is shown that includes a circuit 5010 coupled to a temperature control circuit 5015 and a logic circuit 5020 (FIG. 50-Q shows all blocks as interconnected. But fewer connections are possible). The circuit 5010 uses one or more current limiters described herein that are at least partially formed from ELR material. The logic device controls the temperature control circuit, which in turn controls a cooler / refrigerator such as a cryogenic liquid or gas cooler that cools the circuit 5010. Thus, in order to increase the sensitivity and response of the system 5000, the logic circuit 5020 sends a signal to the temperature control circuit 5015 to lower the temperature of the circuit 5010. As a result, the circuit 5010 using ELR material allows the ELR material to increase conductivity,
This increases the sensitivity and response of the circuit.

Although individual current limiters are shown, the current limiters can be coupled together to form a bank or array of current limiters, or other more complex current limiter systems. As with the other categories of current limiters described herein, many current limiter array configurations are possible, and current limiters or multi-limiters that are at least partially formed from modified ELR materials. Realizing the fluency system is a design matter of the designer. The modified ELR material described herein is:
A multi-current limiter system including two or more combinations of the current limiters and principles described herein can be used even if the combination is not explicitly described . In fact, such a multi-current limiter system uses two or more different or dissimilar current limiters (such as resistance and induction), or simply the same or not the same (both as induction). May be. Such current limiter systems are fairly homogeneous current limiters, all made of modified ELR materials, or heterogeneous mixtures of different types of current limiters, some of which are non-ELR It can include a current limiter formed of material, or a combination of different current limiters and different materials. Therefore, the complex current limiter system is a modified EL
Two or more current limiters formed from two or more homogeneous current limiters formed primarily from R material and / or two formed mainly from modified ELR materials Or more heterogeneous current limiters and / or two or more homogeneous / heterogeneous current limiters formed from both conventional conductors and modified ELR materials it can.

Although specific examples of current limiters using components partially or wholly formed from modified ELR materials are described herein, those skilled in the art will be able to use virtually any current limiter configuration. To conduct current, receive signals, or send or modify electromagnetic signals
It will be understood that components formed at least in part from modified ELR materials, such as the components described above, may be used. (ELR materials can be used with conductive elements in the circuit, but modified EL while relying on the definition of "conductive"
It may be more appropriate to state that the R material promotes the propagation of energy and signals along its length or region). As a result, it is impossible to enumerate in full detail all possible current limiters and current limiting systems that use components formed from modified ELR materials.

Although several suitable shapes are shown and described herein for some current limiters, many other shapes are possible. These other shapes include different patterns for length and / or width, different configurations in addition to differences in material thickness, use of different layers, differences in other 3D structures (coil and core types, etc.) Or include a different layout. We can use modified ELR materials, systems, associated with virtually all current limiters known in the art, modified ELR materials, batteries, And other current limiting having one or more components formed entirely or in part from modified ELR materials without undue experimentation, and various examples of principles provided I believe that the vessel could be realized.

In some embodiments, a current limiter (FCL) that includes a modified ELR material can be described as follows.

An induction current limiter, comprising: a primary induction coil connected in series with a circuit to be protected; and a secondary induction coil arranged in series in a closed loop; and the primary induction coil; The secondary induction coils are inductively coupled together and inductively coupled such that inductance can be induced between the primary induction coil and the secondary induction coil. The above
The secondary induction taco includes a core and a modified very low resistance (ELR) nanowire configured in a coil shape at least partially surrounding the core, wherein the modified ELR nanowire is made of an ELR material. An inductive current limiting device comprising: a modified ELR film having a first layer comprising: a second layer comprising a modifying material coupled to the ELR material of the first layer.

An apparatus, comprising: a first three-dimensional coil at least partially wrapped around a first core; and a second three-dimensional coil at least partially wrapped around a second core; The first three-dimensional coil and the second three-dimensional coil each include a first portion having a very low resistance (ELR) material and a second portion coupled to the first portion, the ELR material The first three-dimensional coil and the second three-dimensional coil are guided through the first three-dimensional coil and the second three-dimensional coil. .

An inductive current limiting device for use in a power distribution network, a primary induction coil connected in series with a circuit to be protected downstream of a power generation source, and a secondary side arranged in series in a closed loop An induction coil, wherein the primary induction coil and the secondary induction coil are inductively coupled together so that inductance is mutually induced between the primary induction coil and the secondary induction coil The primary induction coil and the secondary induction coil are sized to receive a current or voltage that is higher than a current or voltage associated with power supplied to a standard household consumer; The induction coil includes a core and a modified very low resistance (ELR) nanowire configured in a coil shape that at least partially surrounds the core, the modified ELR nanowire comprising: a first layer of ELR material; The above An inductive current limiting device formed from a modified ELR film having a second layer of a modifying material bonded to the ELR material of the first layer.

A resistive current limiter comprising a resistive element coupled to a circuit to be protected, the resistive element coupled in series between the circuit and a power source, the resistive element being modified
The modified ELR comprising at least a portion formed from ELR nanowires or tape
The nanowire or the tape is formed of a modified ELR film including a first layer made of an ELR material and a second layer made of a material to be modified bonded to the ELR material of the first layer. Resistive current limiter.

A reactor current limiter, comprising a primary induction coil connected in series with a circuit to be protected that is supplied with AC power, and a secondary induction coil arranged in series in a closed loop, The secondary induction coil and the secondary induction coil are coupled together so that inductance is mutually induced between the primary induction coil and the secondary induction coil,
Including a core and a modified very low resistance (ELR) nanowire configured in a coil shape at least partially surrounding the core, wherein the secondary induction coil is coupled to a DC voltage source;
The modified ELR nanowire is formed from a modified ELR film including a first layer made of ELR material and a second layer made of a modifying material bonded to the ELR material of the first layer. Reactor fault current limiter characterized by

An apparatus for protecting an appliance or device, the apparatus comprising a first modified ELR nanowire or tape formed in a first three-dimensional coil shape, wherein the first modified ELR The nanowire or tape is formed from a modified ELR film that includes a first layer of ELR material and a second layer of modifying material bonded to the ELR material, the device comprising:
A second modified ELR nanowire or tape formed into a three-dimensional coil shape of
The second modified ELR nanowire or tape is formed from a modified ELR film that includes a first layer of ELR material and a second layer of modifying material bonded to the ELR material; The three-dimensional coil receives a DC voltage, and the first three-dimensional coil and the second three-dimensional coil have mutual inductance between the first three-dimensional coil and the second three-dimensional coil. Arranged to be guided, the apparatus comprising: an output electrical port for releasably coupling the first three-dimensional coil with an appliance or device to be protected;
The apparatus further comprising: a power input port for receiving AC power; and a housing surrounding the first three-dimensional coil, the second three-dimensional coil, the output electrical port, and the power input port. .

Chapter 17 Transformers Formed from ELR Materials Refer to Figures 1-36 and Figures 37-R through 50-R for an explanation of this chapter. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

An ideal transformer would be 100% efficient with no energy loss, but conventional transformers often consume energy in windings, cores, etc., as a result of conductor resistance. Since most energy losses are due to the electrical resistance of the windings, existing transformers using superconducting windings achieve efficiencies of over 99%. However, transformers with superconducting windings are
In order to achieve high efficiency, it has the disadvantage of requiring expensive and unreliable cryogenic cooling.

Various types of transformers using windings or induction coils formed from modified, apertured and / or other new very low resistance (ELR) films and materials are detailed herein. be written. This transformer overcomes most of the problems of existing transformers, thereby
Approaching an ideal transformer. The transformer described herein effectively reduces winding resistance to zero. Other losses in the transformer result from eddy currents, hysteresis losses, magnetostrictive losses, and stray field losses. Some of these losses are not directly compensated by using ELR material, but AC losses during winding can be reduced by using ELR material.

Various devices, applications, and / or systems can use the transformers described herein, all of which can use the modified ELR materials described below. These transformers offer many advantages such as being more efficient than conventional materials or transformers made from existing HTS materials. An additional advantage is that the transformers described herein occupy less space than transformers made from conventional and existing HTS materials. Increasing the current density in the modified ELR material forming the transformer winding and reducing the requirement to dissipate heat from the winding results in a reduction in size. Transformers wound with HTS material also require cryogenic cooling that requires changes in the heat exchange of the windings to ensure that all parts of the windings are maintained below the critical temperature Tc And Thus, the transformers described herein using modified ELR materials have the ability to protect the circuit and AC voltage boost / buck or other advantages in small to large scale applications. I will provide a. For example, the transformer described herein can be used as a charger for small electronic devices such as mobile phones, as a power supply charger for large electronic devices such as televisions and stereo systems, or It can be used in large-scale applications such as substations, or it can be used in large-scale applications such as local electrical transmission and distribution systems that carry thousands of amps.

The transformers described in this specification are general transformers such as autotransformers, multiphase transformers, matching transformers, isolation transformers, multiphase transformers, high-leakage reactance leakage transformers, resonators, step-up and step-down transformers, etc. There can be one or more of various types of transformers. By using the ELR materials described herein for transformer inductors and other elements, transformers that find wide application in many technologies protect or isolate various electronic equipment and electrical systems. Can be manufactured for use.

The transformers disclosed herein are suitable for a variety of different scale applications. For example, applications range from small-scale applications at the component and chip level (such as circuit protection or voltage level changes) to medium-scale applications at the system and device level (such as 120-volt AC power supplies), distribution networks and power transmission. It can range up to large-scale applications on the net. Before describing the details of the new transformer, a detailed description of the application of the transformer will be given.

For small scale applications, FIG. 37-R is a schematic diagram showing a chip or other monolithic structure that includes a transformer using a modified ELR material. Chip 3700 includes circuitry 3710 to be protected / isolated. The circuit is rectified and filtered through transformer 3705 and operates with the boosted / bucked voltage. Circuit 3710 is comprised of one or more individual circuits or circuit components. In the embodiment of FIG. 37-R, transformer 3705 is placed in series with circuit 3710 to be protected. However, those skilled in the art will appreciate that the transformer can be connected to the circuit in many possible configurations, including parallel connections that couple via electric or magnetic fields.

By using an on-chip transformer, the chip can benefit from the general advantages of transformers and the operation of the transformer, but it can also enjoy many additional advantages. By using ELR material within the chip 3700, the chip can enjoy an increased density of circuitry. For example, by using ELR material, the chip has less heat loss and can pass more current per unit conductor, so thinner conductors can be used. Conductors and / or interconnects can be made from ELR materials. In addition, since the insertion loss of the conductor is greatly reduced, the signal can be transmitted without being amplified. Further, the chip can be fabricated using minimum scale integrated circuit manufacturing techniques such as 45 nm or smaller minimum feature size techniques. By reducing the functional size, circuit designers can accelerate physical design because there are fewer constraints based on conductor layout and length.

For medium-scale applications, FIG. 38-R shows an example of a system 3800 that includes a transformer housed in a housing and connected to a device such as a consumer device. For example, the transformer 3825 exists on a board (such as a PCB) and is housed in a single housing 3820, thereby protecting / isolating all electrical equipment connected thereto and a box or appliance for supplying power Can be formed. For example, the housing 3820 may include a power cord having a female connection at one end and a male connection at the opposite end. In this example, the consumer is an electrical device (
Computer, television 3805, etc.) can be plugged into the female side 3810 of the transformer housing 3820 and the male outlet 3840 can be plugged into the electrical outlet 3830. Electrical device 3805 then
A transformer 3825 will protect against failure current and be powered. Of course, the transformer can be integrated with other components (on the same printed circuit board as the circuit of the device) in the electrical equipment itself, and is therefore housed with the other circuits. Thus, the transformer can be housed in the computer or television 3805 rather than being an external independent box.

Although a television 3805 is shown, those skilled in the art will appreciate that the transformer 3825 can be connected to a variety of consumer equipment such as personal computers, stereos, alarm clocks, kitchenware, power tools, and the like. . The transformer 3825 can also be used with other devices such as expensive and sensitive medical equipment and scientific equipment. Further, those skilled in the art will recognize that the transformer 38
It will be appreciated that the connection between 25 and transformer 3825 can be varied and is not limited to connection to a standard power outlet.

Transformers find important services in large-scale applications such as power grids. FIG. 39-R is a diagram of a power grid with at least one transformer using a modified ELR material. Power plant 3910
Generates electricity to energize the power grid. The power plant may be coal, geothermal, nuclear, methane, hydro, wind, solar, or any type of power plant that can generate power for use in the power grid. After power generation, the voltage from the power plant 3910 is boosted (or “stepped up”) to a high voltage suitable for transmission over long distances, such as 230 kV.
The voltage can be boosted at a high voltage switching station 3915 including a step-up transformer 3920. The step-up transformer boosts the voltage with a series of coils that wrap the core.

The boosted voltage is transmitted to the substation 3930 via the high voltage transmission line 3925. The substation 3930 includes a step-down transformer 3935 and reduces the voltage to a level suitable for local power distribution such as 13.3 kV. The distribution voltage is then carried on distribution line 3937 to an additional step-down transformer, house 3940, school 3945
Or close at various customers such as 3950 hospitals. The power grid 3900 can include an intermediate transformer 3955 coupled between the step-up transformer 3915 and the step-down transformer 3930. Furthermore, those skilled in the art
It will be appreciated that more transformers can be placed in the simplified power grid of FIG. 39-R.

FIG. 40-R is a schematic diagram illustrating a transformer 4000 having a modified ELR primary winding and a modified ELR secondary winding. The transformer 4000 includes a magnetic core 4010, a primary winding 4020 having a primary winding number 4025, and a secondary winding 4030 having a secondary winding number 4035. Primary winding 4020 and secondary winding 4030 are formed from a modified ELR material, such as a modified ELR nanowire. As described above, in some examples, transformer 4000 may be part of a commercial power grid, while in other examples, transformer 4000
May be a part of a device that boosts or lowers the power supply voltage during operation or other electronic devices. In some examples, transformer 4000 may be a signal transformer or an audio transformer rather than a power transformer. Those skilled in the art will appreciate that transformer 4000 may be implemented in many other applications and devices not described herein. Those skilled in the art will appreciate that various core layouts and winding arrangements can be realized depending on the application.

Utilizing very low resistance materials, such as the modified ELR materials described herein, can provide various features and advantages for transformer 4000 and / or various applications. Since transformers using ELR material modified in the coil show little resistance loss,
This transformer greatly reduces operating costs by minimizing energy losses in the transformer while avoiding problems associated with conventional superconducting materials, such as the cost and reliability of cryogenic cooling systems. Can influence.

Figures 41A-R show another transformer 4 that can be used in a variety of applications, including placement on the grid.
100 is shown. Transformer 4100 includes a housing or shell 4115 coupled to line 4105 and load 4110. Line 410 that can be formed from conventional or modified ELR materials
5 can be input to the transformer shell 4115 via the external connection 4145. A main or first winding 4120 is coupled to line 4105 and is formed from a conventional or modified ELR material and is wrapped around a core 4130 present in the transshell 4115. Second winding 4125
Is wrapped around the opposite end of the core 4130 and can be formed of conventional or modified ELR materials. Output conductor 4150 is coupled between second coil 4125 and load 4110.

Depending on the application, the shell 4115 may include a coolant such as transformer oil. However, the use of modified ELR materials can reduce or eliminate the use or need for cooling. Also, the cooling unit 4135 is a modified ELR material 4
It can be coupled to the transformer shell 4115 to cool 115 to ambient temperature. The modified ELR material can operate in a superconducting state at room temperature, as described herein, but nevertheless in excess heat generated by surrounding high voltage power transmission equipment or in warm weather By exposure to ambient heat and direct sunlight, the cooling unit 4135 may need to cool the modified ELR material to room temperature. Further, as described in greater detail herein, controlling the temperature of the modified ELR material can adjust the electrical performance or the response of the transformer.

Depending on the application, a shunt 4140 of core material can be placed between the primary and secondary windings to limit the secondary short circuit current. This type of transformer is referred to as a high leakage reactance transformer. Referring to FIGS. 41B-R, a simple example of a high leakage reactance transformer 4150 is shown. As shown, the transformer includes a primary winding 4155 and a secondary winding 4160, each winding wrapped around a leg of the core 4165. In particular, the core includes a shunt 4170 between the primary and secondary windings.

FIGS. 42A-R show a three-phase core transformer 4200 that can be used in a variety of applications. The first primary winding 4210, the second primary winding 4220, and the third primary winding 4230 are independent terminals.
Includes 4215, 4225, 4235. Similarly, the first secondary winding 4250, the second secondary winding 4260, and the third secondary winding 4270 each include independent terminals 4255, 4265, and 4275 (FIGS. 42A-R show the first 1 shows a cross-sectional view of one primary winding, a first secondary winding, a half of a first secondary winding, and a half of a first secondary winding).
The primary and secondary windings can be Y-shaped, Δ-shaped or other configurations (especially many phases, many coils,
Can be connected with a transformer including many cores).

42A-R, the first, second and third primary and secondary windings are core 4
Formed around 240. As described herein, the core 4240 can be formed of several types of materials including ferromagnetic materials such as steel. 42B-R are substantially similar to transformer 4200, but as shown, a three-phase shell transformer 4280 with a shell core 4285.
Indicates.

Three-phase transformers can be used particularly in distribution networks that use three-phase distribution. Although three phases are shown, more phases are possible. Any multi-phase transformer can include a bank of three or more single-phase transformers, or a bank where all phases are incorporated into a single multi-phase transformer. Any number of windings and core configurations are possible to produce different attributes, phase shifts, or other characteristics.

Figure 43-R shows a single-turn transformer 4300 where the same winding section operates as both the primary and secondary sides.
An example of As shown, the transformer 4300 includes a primary side 4310 coupled to a single coil 4330. The secondary side 4320 includes a movable tap 4340, but two or more fixed taps are possible, and in the example of FIG. 43-R, the winding 4330 is wrapped around or formed around the core. ing.

Many other types of transformers are possible. Another example is shown in FIG. 44-R, but many other transformers are possible. As shown in FIG. 44-R, the transformer 4400 includes two coils 4410, 4415 and an intermediate coil 4420. The coils 4410 and 4415 are the cores 4425 around which the coils 4410 and 4415 are formed.
, Inductively coupled to coil 4420 through 4430. The core can be formed of a number of possible materials, including a ferromagnetic material such as steel, as described herein.

Many other shapes are possible. For example, a toroidal core may be used. Many other core shapes are known. Further, as described herein, the core material can be formed from many different types of materials. A partially or wholly modified ELR material can even be used to form the core.

In addition to different cores, different windings are possible, as shown below. For example, the transformer may be formed from an inductor made of rectangular tape or strip insulated with a suitable insulator. Winding minimizes leakage inductance and stray capacitance, thereby
It may be arranged to improve electrical characteristics such as frequency response. Furthermore, the transformer may include a winding with multiple taps or terminals, thereby allowing multiple voltage ratios to be selected.

The transformer described herein may be implemented using inductors and other components formed at least in part from modified ELR or other materials, as described below.

Inductors with modified, open, and / or other ELR components Described are inductors, such as air cores or magnetic core inductors, including components formed from modified very low resistance (ELR) films Has been. In some examples, the inductor includes a core and a nanowire coil formed from a modified ELR film. In some examples, the inductor includes a core formed from a modified ELR film and a tape or foil coil. In some examples, the inductor is formed using a thin film modified ELR film. The modified ELR film exhibits a very low resistance to current at temperatures higher than the normal temperatures associated with current high temperature superconductivity (HTS), and at these higher temperatures, the operating characteristics of the inductor device To improve.

In some examples, the modified ELR film is the type of material, the application of the modified ELR film, the size of the component that uses the modified ELR film, the operation of the device or machine that uses the modified ELR film Manufactured based on requirements. Thus, in the manufacture and design of inductors, the material used as the base layer of the modified ELR film and / or the material used as the layer that modifies the modified ELR film may vary according to various considerations, desired Selection can be based on operating characteristics and / or manufacturing characteristics.

Various devices, applications, and / or systems can use modified ELR inductors. In some examples, a tuned or resonant circuit and its application uses a modified ELR inductor. In some examples, transformers and their applications use modified ELR inductors. In some examples, energy storage devices and their applications use modified ELR inductors. In some examples, current limiting devices and their applications use ELR inductors.

FIG. 45-R shows an air core inductor 4500 having a modified ELR film. Inductor 4
500 includes a coil 4510 and an air core 4520. When the coil 4510 carries current (in the direction toward the right side of the page), a magnetic field 4530 is generated in the core 4520. The coil is formed at least in part from a modified ELR film, such as a film having a base layer of ELR material and a modifying layer formed on the base layer. Various suitably modified ELR films are described in detail herein.

A battery or other power source (not shown) applies a voltage to the modified ELR coil 4510, causing current to flow through the coil 4510. The coil 4510 formed of the modified ELR film is at a temperature higher than that used in conventional HTS materials, such as room temperature or ambient temperature (˜21 ° C.)
Shows little or no resistance to current flow. The current flow in the coil is the core 45
A magnetic field is generated within 20, which can be used to store energy, transfer energy, and limit energy.

Inductor 4500 includes a coil 4510 formed of ELR material, and thus can operate in the same manner as an ideal inductor. Here, coil 4510 has little or no loss due to winding resistance or series resistance normally found in inductors with conventional conductive coils (such as copper coils), regardless of the current through coil 4510. That is, the inductor 4500 can exhibit a very high quality (Q) factor (close to infinity, etc.). The quality (Q) factor is the ratio of inductive reactance to resistance at a given frequency, ie Q = (inductive reactance) / resistance.

In some examples, the modified ELR coil is a transition temperature (˜80-135) of conventional superconducting materials.
K) and very low resistance to current flow between room temperature (~ 294K). In these examples, the inductor is a cooling system (not shown) such as a cryocooler or cryostat used to cool the coil 4510 to the critical temperature of the modified ELR film type used by the coil 4510. ) Can be included. For example, the cooling system can cool the coil 4510 to the same temperature as the liquid freon temperature, to the same temperature as the temperature of ice or ice melting, or to the same temperature as other temperatures described herein. It may be a system. That is, the cooling system can be selected based on the modified ELR film type and structure or the material used in the coil 4510.

In some examples, air core 4520 is self-supporting. In another example, air core 4520 is wound on a non-magnetic material or structure (not shown) such as plastic or ceramic. The material and shape of the core can be selected based on various factors. For example, selecting a core material that has a permeability higher than that of air generally increases the concentration of the induced magnetic field 4530 and thus increases the inductance of the inductor 4500. In another example, the choice of core material is
It may be dominated by the desire to reduce core losses in high frequency applications. One skilled in the art will appreciate that the cores may be formed in a number of different materials and shapes to achieve certain desired characteristics and / or operational characteristics.

As is known in the art, the configuration of coil 4510 may affect operating characteristics such as inductance. For example, the number of turns of the coil, the cross-sectional area of the coil, the length of the coil, etc. may affect the inductance of the inductor. Although shown in one configuration, the inductor 4500 can be used in a variety of ways to obtain certain operating characteristics (inductance values) to reduce undesirable effects (eg, skin effect, proximity effect, parasitic capacitance). Can be configured. These techniques are commonly used to increase the self-resonant frequency and quality factor (Q) of the inductor.

In some examples, coil 4510 can include multiple turns parallel to each other. In some examples, the coil can include several turns at different angles. Thus, the coil 4510 can be formed in a variety of different configurations. For example, a honeycomb or basket weave pattern that is continuously wound in a cross shape at various angles to each other, a spider web pattern composed of flat spiral coils spaced from each other, and various strands are insulated from each other It can be formed with litz wire.

In addition to air-core inductors, magnetic core inductors such as inductor 4600 can also use modified ELR films, as will be described below. FIG. 46-R is a schematic diagram showing a magnetic core inductor 4600 using a modified ELR film. Inductor 4600 includes a coil 4610 and a magnetic core 4620, such as a core formed from a ferromagnetic or ferromagnetic material. Similar to the inductor 4700 of FIG. 47-R, the magnetic field 4630 is generated in the core 4620 when current is carried by the coil 4610. The coil is formed at least in part from a modified ELR film, such as a film having a base layer of ELR material and a modifying layer formed on the base layer. Various suitable modified ELR membranes are described in detail herein. Coil 4610 formed with modified ELR film has little or no resistance to current flow at temperatures higher than those used in conventional HTS materials, such as room temperature or ambient temperature (~ 21 ° C) Not shown. The current flow in the coil creates a magnetic field 4630 in the core 4620, which can be used to limit energy, to transfer energy, to store energy.

A magnetic core 4620 formed from a ferromagnetic material or a ferromagnetic material can increase inductance. The permeability of the magnetic material in the generated magnetic field 4630 is higher than the permeability of air, thus increasing the inductance of the inductor 4600 to better support the formation of the magnetic field 4830 by magnetization of the magnetic material. For example, a magnetic core increases inductance by a factor of 1000 or more.

The inductor 4600 can use a variety of different materials within the magnetic core 4620. In some examples, the magnetic core 4620 is formed of a ferromagnetic material such as iron. In some examples, the magnetic core 4620 is formed of a ferromagnetic material such as ferrite. In some examples,
The magnetic core 4620 is made of, for example, a thin laminated magnetic material such as a silicon steel plate. One skilled in the art will appreciate that other materials can be used depending on the needs and requirements of the inductor 4600.

Further, the magnetic core 4620 (and the inductor 4600) can be configured in various different shapes. In some examples, the magnetic core 4620 may be a rod or a cylinder.
In some cases, the magnetic core 4620 may be a toroid. In some cases, the magnetic core 4620 may be movable, allowing the inductor 4600 to achieve a variable inductance. Those skilled in the art will appreciate that other shapes and configurations can be used depending on the needs and requirements of the inductor 4600. For example, the magnetic core 4620 can be configured to limit various drawbacks such as eddy currents, hysteresis, and / or core losses due to inductance nonlinearity.

Thus, in some examples, a modified ELR material, such as a modified ELR film, and
When the inductor coil is formed using the components, the Q value of the inductor is increased by reducing or eliminating the resistance so that a current flows in the coil.

Manufacture and / or formation of inductors made of ELR material As described herein, in some examples, the inductor coil is a modified ELR.
Because it is formed from a modified ELR material such as a material, an open ELR material, and / or other new ELR materials, it exhibits a very low resistance to the current carried. Figure 47-R
FIG. 5 is a photograph showing an inductor 4700 that uses a modified ELR nanowire. Inductor 4700
Includes a coil 4702 formed as a modified ELR nanowire composed of ELR components described herein, such as a modified ELR film.

When forming an ELR wiring, a plurality of ELR tapes or foils may be sandwiched together to form a large capacity wire line. For example, a coil is supported by a support structure and a support structure.
One or more ELR tapes or foils can be included.

In addition to ELR wires, inductors can be formed from ELR nanowires. In conventional terms, a nanowire is a nanostructure having a width or diameter on the order of nanometers or less and an undefined length. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 50 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 40 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 30 nanometers. In some cases, ELR
The material can be formed into nanowires having a width and / or depth of 20 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 10 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth of 5 nanometers. In some cases, the ELR material can be formed into nanowires having a width and / or depth less than 5 nanometers.

In addition to nanowires, ELR tapes or foils can also be utilized with the inductors and devices described herein. FIG. 48-R shows an inductor 4810 using a modified ELR tape or foil. Inductor 4810 has a core 4812 like iron core and a modified EL
Includes a coil 4814 formed of R tape.

There are various techniques for producing and manufacturing tapes and / or foils of ELR material. In some instances, this technique can be applied to flexible metal tapes coated with buffer metal oxides.
Depositing YBCO or other ELR material to form a coated conductor. During processing,
The texture can be introduced into the metal tape using a rolling assist, a biaxial texture substrate (RABiTS) process or the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam assisted deposition (IBAD) process on an untextured alloy substrate. The addition of the oxide layer prevents metal diffusion from the tape into the ELR material. To produce ELR tape, chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (A
Other techniques such as LL-MBE), and other solution deposition techniques may be utilized. In addition to nanowires, modified ELR tapes or foils can also be utilized with the inductors and devices described herein.

The thin film inductor can also utilize the ELR components described herein. FIG. 49-R is a schematic diagram illustrating an inductor 4920 that uses a modified ELR thin film component. Inductor 4920 is a modified ELR coil 4 formed on printed circuit board 4924
922 and optional magnetic core 4926. The coil 4922 may be a modified ELR film that is etched into the substrate 4924. The coil 4922 can be formed in various configurations and / or patterns depending on the needs of the device or system using the inductor. Also, any magnetic core 4926 may be etched into substrate 4924 as shown, or a flat core (not shown) disposed above and / or below coil 4922
There may be.

To form a transformer, it can be formed next to a second inductor or coil, inductor 4920. Alternatively or additionally, the second inductor can be formed below the inductor 4920 with both conductors formed on the same substrate, such as a printed circuit board. As stated herein, near-ideal transformer response has been modified as described herein.
Air core transformers can therefore be accepted in many applications, as can be obtained by using ELR materials.

Overall, modified ELR films are tapes, foils, rods, strips, nanowires, thin films, and others that can move or flow current from one point to another to generate a magnetic field. It may be formed in the shape or structure.

In some examples, the type of material used in the modified ELR film can be determined by the type of application utilizing the film. For example, in some applications, a modified ELR material having a BSCCO ELR layer can be utilized, while in other applications, a YBCO layer can be utilized. That is, the modified ELR materials described herein may be formed in a specific structure (such as a tape or nanowire) based on the type of machine or component that utilizes the modified ELR film, It may be formed from a specific material (YBCO, BSCCO).

Various processes can be used in the manufacture of inductors, such as the inductors described herein, and thus the transformers described herein. In some examples, the core is formed and
Maintained, received and / or deployed. The core can take various shapes and configurations. Examples of configurations are cylindrical rods, single "I" shape, "C" or "U" shape, "E" shape, a pair of "E"
“Including shapes, pot shapes, toroid shapes, annular or bead shapes, planar shapes, etc. The core can be formed of various non-magnetic and magnetic materials. Exemplary materials include iron or soft iron,
Including silicon steel, various laminated materials, silicon alloys, carbonyl iron, iron powder, ferrite, ceramics, glass, amorphous metals, ceramics, plastics, air, etc.

Also, a coil, such as a coil formed from a modified ELR nanowire, tape, or thin film, is configured into a desired shape or pattern and then bonded to the core that is formed or maintained . In some examples, the core is not present and the modified ELR nanowire is configured into the desired shape or pattern. In some examples, the modified ELR nanowire coil is etched directly into the printed circuit board and the planar magnetic core is positioned relative to the etched coil. Those skilled in the art will appreciate that other manufacturing processes may be utilized when manufacturing and / or forming the inductors described herein.

Although a single transformer is generally described above for each application, two or more transformers may be provided within a given chip, housing, grid substation, or other environment. Good. Certainly, a given environment can use one or more chips having one or more of the disclosed transformers, which in turn can be used with one or more housings. And can be incorporated into larger scale environments such as power distribution networks. Of course, the transformer described herein can be manufactured with both ELR materials as well as conventional materials.

Additional transformer applications with ELR components The transformers described above are suitable for use in many applications ranging from on-chip to distribution network use. By using ELR material modified in such a transformer, the transformer exhibits orders of magnitude lower resistance than the best conventional conductors under similar conditions.

As mentioned above, the modified ELR material has a temperature dependent performance. As a result, the transformers described herein that use modified ELR materials are also temperature dependent. Temperature changes affect the magnetic field penetration into the conductor, which affects the superconducting penetration depth. Such changes in material can be modeled based on the response behavior of the modified ELR material as described herein to temperature or can be derived empirically. It has been changed
By using ELR material, the resistance of the line is negligible, but its resistance can be adjusted based on temperature, as shown in the temperature graph described herein. for that reason,
The transformer design can be adjusted to compensate for temperature and the transformer output can be adjusted by changing the temperature.

Referring to FIG. 50-R, a diagram of a system 5000 is shown that includes a temperature control circuit 5015 and a circuit 5010 connected to a logic circuit 5020 (in FIG. 50-R, all blocks are shown as interconnected). Although shown, fewer connections are possible). Circuit 5010 is described herein,
Use only one or more transformers at least partially formed from ELR material. The logic circuit controls the temperature control circuit, which in turn controls a cooler / refrigerator such as a cryogenic or liquid gas cooler that cools the circuit 5010. Accordingly, to increase the sensitivity and response of the system 5000, the logic circuit 5020 signals the temperature control circuit 5015 to reduce the temperature of the circuit 5010. As a result, the circuit 5010 using ELR material causes the ELR material to increase conductivity, thereby increasing the sensitivity, responsiveness, and efficiency of the circuit.

Although individual transformers are shown, the transformers can be combined together to form a bank or array of transformers, or other more complex transformer systems. Like the other categories of transformers described herein, many transformer array configurations are possible, enabling transformers or multi-transformer systems that are at least partially formed from modified ELR materials It is a design matter of the designer to do. The modified ELR material described herein is a multi-transformer system that includes a combination of two or more of the transformers and principles described herein, even if the combination is explicitly described. Even if not, it can be used. Indeed, such a multi-transformer system may use two or more non-identical or heterogeneous transformers, simply the same or not homogeneous. Such transformer systems are fairly homogeneous transformers, all formed of modified ELR materials, or heterogeneous mixtures of different types of transformers, some of which are non-EL
It can include a transformer formed of R material, or a combination of different transformers and different materials. Thus, a complex transformer system has been modified with two or more transformers formed from two or more homogeneous transformers, mainly formed from modified ELR materials, and / or Two or more heterogeneous transformers, mainly formed of ELR material, and
Alternatively, two or more homogeneous / inhomogeneous transformers formed from both conventional conductors and modified ELR materials can be used.

Although specific examples of transformers using components partially or wholly formed from modified ELR materials are described herein, those skilled in the art will recognize that virtually any transformer configuration is a current To transmit, receive signals, or transmit or modify electromagnetic signals
It will be understood that components formed at least in part from modified ELR materials, such as the components described above, may be used. (ELR materials can be used with conductive elements in the circuit, but modified EL while relying on the definition of "conductive"
It may be more appropriate to state that the R material promotes the propagation of energy and signals along its length or region). As a result, it is impossible to list in full detail all possible transformers and transformer systems that use components formed from modified ELR materials.

Although several suitable shapes are shown and described herein for some transformers, many other shapes are possible. These other shapes include different patterns for length and / or width, different configurations in addition to differences in material thickness, use of different layers, differences in other 3D structures (coil and core types, etc.) Or include a different layout. We can use modified ELR materials, systems and associated systems of virtually all transformers known in the art, modified ELR materials, batteries, and Those skilled in the art who have been provided with various examples of principles will be able to use other transformers with one or more components formed entirely or partly from modified ELR materials without undue experimentation. Believe that it could be realized.

In some embodiments, a transformer that includes a modified ELR material can be described as follows.

A transformer comprising: a primary coil; and a secondary coil inductively coupled to the primary coil, the secondary coil comprising at least a core and at least a part of the core. A modified very low resistance (ELR) nanowire configured in an encircling coil, wherein the modified ELR nanowire is coupled to a first layer of ELR material and the ELR material of the first layer A transformer characterized in that it is formed of a modified ELR film comprising a second layer of a material to be modified.

A method of manufacturing a transformer, the method comprising: forming a first coil in a first three-dimensional coiled shape.
Setting a first elongated conductor, and setting a second elongated conductor in a second three-dimensional coiled configuration, the first elongated conductor and the Each of the second elongated conductors includes a first layer of ELR material and a second layer of modifying material chemically bonded to the ELR material of the first layer, the method comprising: Furthermore, it has the process of arrange | positioning the said 1st three-dimensional coiled shape object in proximity to the said 2nd three-dimensional coiled shape object, and guide | inducing induction coupling among them. The manufacturing method characterized by this.

A method for manufacturing a transformer, the method comprising receiving a first modified ELR nanowire or tape, wherein the first modified ELR nanowire or tape comprises ELR
A modified E having a first layer of material and a second layer of modifying material bonded to the ELR material.
Formed from an LR film, the manufacturing method further comprises receiving a second modified ELR nanowire or tape, wherein the second modified ELR nanowire or tape comprises a first layer of ELR material and A modified ELR having a second layer of modifying material bonded to the ELR material
Formed from a film, wherein the manufacturing method further includes forming the first modified ELR nanowire or tape as a primary winding into a first three-dimensional coil shape, and the first three-dimensional Forming a transformer using a coil shape and forming the second modified ELR nanowire or tape into a secondary winding, the primary winding and the secondary winding. Is arranged such that inductance is induced between the primary winding and the secondary winding.

A device, wherein the device is a first three-dimensional coil at least partially wrapped around a first core and at least partially wrapped around the first core or the second core. A first portion having a very low resistance (ELR) material, and the first three-dimensional coil and the first three-dimensional coil, respectively. Combined with
And a second portion for reducing the resistance of the ELR material, wherein the first three-dimensional coil and the second three-dimensional coil are inductively coupled.

A transformer for use in a power distribution network, comprising a primary coil connected downstream of a power generation source, and a secondary coil, wherein the primary coil and the secondary coil are the primary coil Inductively coupled together so that inductance is mutually induced between the coil and the secondary coil,
The secondary coil and the secondary coil are sized to receive a current or voltage that is higher than the current or voltage associated with power supplied to a standard household consumer, the secondary coil comprising: At least a modified very low resistance (ELR) nanowire set in a coil shape that at least partially surrounds the coil, the modified nanowire comprising a first layer of ELR material; A transformer formed from a modified ELR film having a second layer of modifying material bonded to a layer of the ELR material.

A method of manufacturing a transformer for use in a power distribution network comprising: setting a first elongated conductor in a first three-dimensional coil winding; and a second three-dimensional coil Setting a second elongate conductor in a wound shape, wherein the first elongate conductor and the second elongate conductor are each a first layer of ELR material; A second layer of altering material chemically bonded to the ELR material of the first layer, the method further comprising the first three-dimensional coil winding and the second three-dimensional coil A relationship in which windings are inductively coupled together so that inductance is induced between the first three-dimensional coil winding and the second three-dimensional coil winding. And arranging the first three-dimensional coil winding object and the second three-dimensional coil. Manufacturing method the winding shape thereof, characterized in that it is constituted sized to receive at least 30% higher current or voltage than the current or voltage associated with the power provided to the consumer of a standard household.

An apparatus for use in or with an appliance or device, the apparatus comprising a first modified ELR nanowire or tape formed in a first three-dimensional coiled shape, The first modified ELR nanowire or tape is formed of a modified ELR film having a first layer of ELR material and a second layer of modifying material bonded to the ELR material; , Having a second modified ELR nanowire or tape formed in a second three-dimensional coil winding, wherein the first modified ELR nanowire or tape comprises a first layer of ELR material, and Second of the changing material combined with the ELR material
And the first three-dimensional coil winding shape and the second three-dimensional coil winding shape are formed of the first three-dimensional coil winding shape and the first three-dimensional coil winding shape. Arranged such that inductance is mutually induced between two three-dimensional coil windings, and the apparatus further connects the first three-dimensional coil winding with the appliance or device to be protected. An output electrical port and a power input port for receiving external power, wherein the power input port is coupled to the second three-dimensional coiled object.

A semiconductor chip, wherein the semiconductor chip has a substrate and a transformer formed on the substrate, and the transformer has a first three-dimensional coil and a second three-dimensional coil. And the first three-dimensional coil and the second three-dimensional coil are respectively coupled to the first portion having a very low resistance (ELR) material and to the first portion, and the ELR material. A semiconductor chip, wherein the first three-dimensional coil and the second three-dimensional coil are inductively coupled to each other.

Chapter 18 Power Transmission Lines Made of ELR Material For the description of this chapter, refer to FIGS. 1-36 and FIGS. 37A-S to 40B-S. Accordingly, all reference numbers included in this chapter refer to components found in such figures.

Power transmission components such as power transmission lines, wires, and / or cables using very low resistance (ELR) materials have been described. ELR materials, which can be modified ELR materials, apertured ELR materials, etc., can transfer power from one location to another without incurring resistive losses or reducing resistive losses. Allows to transmit, carry and / or transport.

As described herein, some or all of the modified and / or open ELR materials described herein require transmission of power from one location to another. Can be used by power transmission components such as utility lines and power lines, wires, and / or cables in the system. Figures 37A-S and 37B-S illustrate a power distribution system that uses very low resistance (ELR) materials.

FIGS. 37A-S show a power transfer system 3700. FIG. The power transfer system 3700 includes an energy source 3710, a transmission line 3720, and a receiver 3730. The energy source 3710 may be an energy generator and / or an energy storage device. For example, the energy source 3710 may be an electrostatic device, an electromagnetic induction device (generator, dynamo, AC generator, superconducting magnetic energy storage (
SMES) equipment), electrochemical devices (batteries, capacitors, fuel cells), photoelectric effect devices (
Solar cells or photovoltaic cells), thermoelectric devices (thermocouples, thermopiles, etc.), piezoelectric devices, nuclear power generation, green or renewable energy devices (wind turbines, tsunami devices, etc.) and / or for use in the system Generating, storing, and / or energy
Or any other device that can be provided.

Recipient 3730 may be an entity that receives energy at power transfer system 3700, such as an operator that receives loads, system nodes, or other components and / or energy. The recipient 3730 may be a resident, an electrical device, a microgrid, or other end user. For example, the receiver 3730 can include a distribution system network that carries power from the transmission line 3720 and delivers power to the consumer. Typically, the distribution system network includes medium voltage (50kV or less) power lines, substations, pole transformers, low voltage (1kV or less) distributed wiring, electricity meters, and the like.

Transmission line 3720 may be one or more power transmission lines, one or more underground power transmission lines, or other cables and / or wires that transfer energy from one location to another. In some examples, the transmission line 3720 has been modified and / or such as the ELR material described herein that can carry current with very low resistance values at ambient temperature and pressure. Including open ELR material.

The power transfer system 3700 includes other components configured to coordinate, control, disconnect, switch, and / or assist in the transfer of energy from one location to another, such as a utility network. FIGS. 37B-S illustrate a power transfer system 3750 that includes a transformer 3740 in addition to an energy source 3710, a transmission line 3720, and an energy receiver 3730. FIG.

The power transfer system 3750 includes a transformer 3740 that can be utilized to increase and / or decrease the voltage associated with the transmitted energy. For example, transmitting power at high voltage typically reduces energy loss due to the resistance of the conductive elements of the transmission line.
That is, for a given amount of power, increasing the voltage reduces the current, thus causing a resistive loss in the conductive element. For example, increasing the voltage by a factor of 10 will reduce the current by a corresponding factor of 10, thus increasing the resistance loss by a factor of 100.

The power transfer system 3700 and / or 3750 may include other components such as fault current limiters, substations, information gathering devices, fault current controllers not shown in FIGS. 37A-S to 37B-S . In some instances, utilizing the ELR material described herein as a current conductor in a transmission component such as the system transmission line 3720, the system can store energy without increasing the voltage to prevent resistive losses. It can be possible to transmit. Thus, in these examples, the ELR-based transmission line 3720 described herein allows the power transfer system to transport power at low voltages, which builds and maintains the power transfer system. To make it safer, more efficient and cheaper. The ELR based transmission line 3720 is described below.

FIG. 38-S is a schematic diagram 3800 illustrating the various layers in a power transmission line. Power transmission line 3720
Such a power transmission line can include a number of different layers including an ELR base conductive layer 3830. The ELR base conductive layer 3830 can include the ELR layer 3832 described herein and the modified layer 3834.

The power transmission line may also include a substrate layer 3810, a buffer layer 3820, a conductive bypass layer 3840, an insulating layer and / or a stabilization layer 3850. For example, the buffer layer 3820 can be formed of magnesium oxide (MgO), the bypass layer 3840 can be formed of silver, and / or the stabilization layer 3850 can be formed of copper.

In some examples, the ELR-based cable includes layers in tape form 3810-3850 along with other components that are used to manufacture a cable suitable for current transmission. Fig. 39
FIG. 4 is a cross-sectional view of a power transmission cable 3900 including an ELR-S based transmission element. Layer 3810-
In addition to 3850, the cable 3900 further includes a thermal insulation layer 3920 that provides thermal insulation between the inner region 3910 and a region around the cable 3900, such as an outer region of the covering layer 3930 of the cable 3900.

In some examples, the ELR base cable 3900 is formed from a layer 3810 that is wrapped around one or more formers that provide structural support for the tape within the cable 3900.
One or more tapes can be included. Although not shown in the figure, cable 3900
Can include various other layers such as an insulating layer, a light shielding layer, a support layer, a protective layer, a conductive layer, a connection layer, and the like. In some examples, ELR-based cable 3900 can include a plurality of formers that support one or more wound ELR-based tapes.

In some examples, the ELR material in cable 3900 is the transition temperature of traditional HTS material (~ 80-13
5K) and very low resistance to current flow at temperatures between ambient temperature (~ 275K ~ 313K) (such as temperatures between 150K and 313K or higher). In these examples, the ELR base cable 3900 may utilize a cooling system 3940 such as a refrigerator or cryostat used to cool the region 3910 containing the ELR material within the cable 3900. The cooling system 3940 may be adapted to maintain the ELR material at a critical temperature for the modified ELR material type used by the device. For example, the cooling system 3940 is an ELR
ELR the element to the same temperature as the boiling point of CFC, to the same temperature as the melting point of water
To temperatures below the ambient temperature of the element, or to other temperatures described herein,
It may be a system capable of cooling. That is, the cooling system 3940 can be selected based on the type and structure of the ELR material in the ELR base cable 3900.

As described herein, in some examples, the conductive layer 3830 of the ELR base cable is at ambient or other high temperatures, such as temperatures between 150K and 313K, for the current being carried. Can exhibit very low resistance. One skilled in the art will appreciate that the conductive layer 3830 can be formed in a variety of different configurations, such as wires, nanowires, and the like. In some examples, the conductive layer 3830 is an ELR-based tape, and / or for use in an ELR-based power transmission line.
Or it is formed with foil.

There are various techniques for producing and manufacturing tapes and / or foils of ELR material. In some instances, this technique can be applied to flexible metal tapes coated with buffer metal oxides.
Depositing YBCO or other ELR material to form a coated conductor. During processing,
The texture can be introduced into the metal tape using a rolling assist, a biaxial texture substrate (RABiTS) process or the like. Alternatively, a textured ceramic buffer layer may be deposited using an ion beam assisted deposition (IBAD) process on an untextured alloy substrate. The addition of the oxide layer prevents metal diffusion from the tape into the ELR material. To produce ELR tape, chemical vapor deposition CVD, physical vapor deposition (PVD), molecular beam epitaxy (MBE), atomic layer bilayer molecular beam epitaxy (A
Other techniques such as LL-MBE), and other solution deposition techniques may be utilized.

In some examples, the type of material used in the modified ELR film can be determined by the type of application utilizing the film. For example, in some applications, a modified ELR material having a BSCCO ELR layer can be utilized, while in other applications, a YBCO layer can be utilized. That is, the modified ELR materials described herein may be formed in a particular structure (such as a tape or nanowire) based on the type of machine or component that utilizes the modified ELR film, It may be formed from a specific material (YBCO, BSCCO).

Various manufacturing processes can be used when forming the power transmission lines described herein. For example, a first layer of ELR material can be deposited on a metal tape having a buffer oxide such as MgO formed on its surface. Next, a second layer of material to be modified is deposited over the first layer. A protective layer can then be deposited over the modifying layer, such as silver or other conductive metal. A stabilizing layer, such as a copper layer, can then be formed on the protective layer. In some cases, light blocking layers, insulating layers, protective layers, and other layers can also be formed in the power transmission line.

For example, the transmission component of a power transmission cable can include an ELR base tape that is spirally wrapped around a former or other base structure. Subsequently, the electric insulating layer covers the ELR base tape, the shield layer covers the insulating layer, and the protective layer covers the light shielding layer to form a conductive core of the power transmission cable. One or more conductive cores can be disposed within the housing of the cable. In some cases, the housing is coupled to a cooling device that is configured to maintain the temperature within the cable and surround one or more conductive cores at a temperature lower than the ambient temperature of the power transmission cable. It may be a part of a heat insulating housing.

Of course, those skilled in the art will recognize that other processes are described in the ELR base tape, conductive core,
You will notice that it can be used during the manufacture of power transmission cables and / or transmission line components.

A power transmission cable for use in long-distance power transmission is shown in Figure 39-S, but is part of the ELR-based transmission line and other various energy transmission components described herein. May be. Examples of transmission lines that can utilize the ELR materials described herein are:
Examples include power cords, power cords and / or line cords that connect electrical devices such as electrical outlets, wiring in the structure, power communication cables, and the like to the power source.

Connecting an ELR-based power transmission line Sometimes an ELR-based transmission line is transferred to another ELR-based transmission line or a conventional transmission without losing large amounts of energy due to poor connections, improper bending, or other coupling problems You may need to connect to the line. 40A-S and 40B-S are schematic diagrams showing connections between ELR-based power transmission lines and other transmission components.

40A-S show a conventional transmission line 4 having a metal conductor 4020 such as copper and another non-conductive layer 4030.
1 is a side view of a system 4000 having an ELR-based transmission line 3800 connected to 010. FIG. Connection
4000 aligns the layers in the conductive element 3830 of the ELR-based transmission line 3800, including the ELR layer 3832 and the modifying layer 3834, with the metal conductor 4020 of the conventional transmission line 4010. Such alignment can facilitate robust transmission of electrical energy from the ELR-based transmission line 3800 to the conventional transmission line 4010.

40B-S show a system 4040 having an ELR-based transmission line A connected to an ELR-based transmission line B. FIG. Connection. Component 4050 is connected to transmission line A and transmission line B and includes a conductor 4052 and an insulating layer 4054. The conductor 4052 may be a conventional conductor such as copper or aluminum, or may be formed in part or in whole with the ELR material described herein. A conductor that is thicker than the conductive element 3830 of the transmission line facilitates robust transmission of electrical energy from one ELR-based transmission line 3800 to another ELR-based transmission line 3800. In some cases, modified and / or open ELR materials and current HTS or LTS
There may be a connection between ELR materials.

In some cases, the connections can be formed with multiple tiers, diagonal orientations, and / or parallel Lapp joints. Such a configuration can increase the connection area between components and / or minimize heat storage at the connection point.

Thus, the ELR materials described herein can be used to develop power transmission lines such as overhead power cabled and / or underground power cables that carry current with very low resistance without using expensive cooling systems. Enable use. Such use allows the power transmission system to be simplified because the dependence on high voltage transmission schemes is no longer necessary to reduce resistance losses in transmission. Thus, ELR-based materials can enable low voltage, high current, more efficient, safer, more cost effective and more reliable power transfer systems. For example, the use of ELR materials can facilitate the spread of DC power.

In some embodiments, a transmission line that includes modified ELR material can be described as follows.

A transmission line comprising a substrate layer, a buffer layer formed on the substrate layer, and a conductive layer, wherein the conductive layer is formed of a modified very low resistance (ELR) material. A transmission line characterized by that.

A method of forming a power transmission line, comprising: forming a first layer of ELR material on a substrate; and forming a second layer of material to be changed on the first layer of ELR material. A method characterized by comprising.

A power transfer component configured to transfer current from a first location to a second location, wherein the power transfer component includes a conductive element, the conductive element comprising a first of open ELR material. A first layer and a second layer of changing material, wherein the changing material is an improved property of the open ELR material relative to the properties of the ELR material when the changing layer is absent. A power transmission component characterized by causing

A transmission line comprising: a substrate layer; a buffer layer formed on the substrate layer; and a conductive layer formed on the buffer layer and formed of a modified very low resistance (ELR) material. And a temperature component, wherein the temperature component is configured to maintain a temperature of the conductive layer at a temperature lower than a temperature surrounding the transmission line.

A method of forming a power transmission line comprising: forming a housing; forming a first layer of ELR material on a substrate in the housing; and changing a material on the first layer of ELR material. Forming a second layer; and coupling a cooling component to the housing configured to maintain the temperature of the housing at a temperature lower than a temperature surrounding the housing.

A power transfer component configured to transfer current from a first location to a second location, the power transfer component having a conductive element, the conductive element being made of an open ELR material. A first layer and a second layer of changing material, wherein the changing material is improved with respect to the properties of the ELR material when the open ELR material is free of the changing layer. The conductive element further includes a cooling component, the cooling component maintaining a temperature of the conductive element at a temperature lower than a temperature surrounding the power transmission component. A power transmission component characterized in that it is configured.

A method of transferring current from an energy source to a receiver, wherein the energy received from the energy source is input to a transmission line formed of a modified very low resistance (ELR) material, and one or more Receiving the input energy from the transmission line.

A system for transmitting power between components of a system, comprising a power source, a power receiver, and a transmission line, wherein the transmission line delivers power from the power source to the power receiver at a standard pressure of 150K. And a system characterized by including a modified very low resistance material configured to transmit at a temperature between 313K and 313K.

A method for transmitting power within a utility network, the method comprising: receiving power in a transmission line having a conductive core formed of a modified very low resistance (ELR) material; and the received power Transmitting to the transmission line through a conductive core with a very low resistance;
A method characterized by comprising:

An electric power cable, wherein the electric power cable includes a housing, and the housing includes a conductive core, and the conductive core is formed on a substrate layer, a buffer layer formed on the substrate layer, and on the buffer layer. A conductive layer formed from a modified, very low resistance (ELR) material formed, and a temperature component, the temperature component being at a temperature within the housing at a temperature lower than a temperature surrounding the housing. A power cable, characterized in that it is configured to maintain

A power transmission cable configured to transmit current from a first position to a second position,
The power transmission cable includes a housing and a conductive core, and the conductive core includes a former,
A conductive element wound around the former, the conductive element having an open first layer of ELR material and a second layer of material to be modified, the material to be modified comprising: A power transmission cable, characterized in that the opened ELR material exhibits improved properties relative to the properties of the ELR material when there is no layer to change.

A power cable, the power cable having a very low resistance (ELR) tape;
The ELR tape has a substrate made of metal, a buffer layer formed on the metal substrate, and a conductive layer formed on the buffer layer, and the conductive layer is modified to be very low Power cable, characterized by being made of resistance (ELR) material.

A power transmission system comprising an energy source, a transmission line including a modified very low resistance (ELR) material, and an energy receiver.

A power cable for use in a utility network, wherein the power cable has a very low ELR tape, the ELR tape comprising a substrate formed of metal and a buffer formed on the metal substrate. And a conductive layer formed on the buffer layer, wherein the conductive layer is formed of a modified very low resistance material.

A power cable for connecting an electrical device to a power source, the power cable having a very low resistance (ELR) tape, wherein the ELR tape is formed on a metal substrate and on the metal substrate. A power cable comprising: a formed buffer layer; and a conductive layer formed on the buffer layer, wherein the conductive layer is formed of a modified very low resistance (ELR) material. .

Accordingly, the various electrical, mechanical, computer use and / or other devices described in Chapters 1-18 are not specifically described herein. Can be used and / or included with components formed from modified ELR materials, such as the modified ELR materials described in.

Throughout this specification and claims, unless otherwise explicitly required by context, terminology
“Including”, “having”, etc. should be interpreted in a comprehensive sense as opposed to an exclusive or exhaustive meaning. That is, it means “including but not limited to”. As used herein, the terms “connected”, “coupled” or variations thereof mean a direct or indirect connection or coupling between two or more elements, and between elements The connection or coupling can be a physical, logical connection or coupling, or a combination thereof. In addition, the terms "specification", "above", "below", and similar meaning terms when used in this application refer to the entire application rather than to a specific part of the application. . Where the context permits, words used in the above detailed description using single or multiple numbers may each include the plural or singular. The term “or” referring to a list of two or more terms includes all interpretations of “any of the terms in the list, all of the terms in the list, any combination of terms in the list”.

The above detailed description of system embodiments is not intended to be exhaustive and is not intended to limit the system to the precise forms disclosed above. Although exemplary embodiments for the system are described above for exemplary purposes, those skilled in the art will recognize that various equivalent modifications are possible within the scope of the system.

The teaching of the system described herein need not be limited to the system described above,
It can also be applied to other systems. The elements and operations of the various embodiments described above are:
Can be combined to provide further examples.

All of the above patents, applications and other references, including those listed accompanying the application documents, are incorporated herein by reference. The aspects of the system can be modified according to the various reference systems, functions, and concepts described above to provide further examples of the system as needed.

These and other changes can be made to the system in view of the above detailed description. While the above description details some embodiments of the system and describes the best mode contemplated, regardless of how described in the detailed description above, the system It can be implemented in many ways. For more information on local-based support systems,
Although specific details disclosed herein may vary considerably, specific terms disclosed herein are limited to the specific features, functions, or aspects of the system with which the terms are associated. Should not be construed to mean redefined. In general, the terms used in the following claims are intended to refer to the specific embodiments disclosed herein, unless such terms are explicitly defined in the Detailed Description section above. It should not be construed as limited to the system. Accordingly, the actual scope of the system does not include only the disclosed embodiments, but includes all equivalent ways of implementing or implementing the system in the claims.

Although some aspects of the technology are set forth below in the form of specific claims, the inventors contemplate various aspects of any number of the claimed forms. Accordingly, the inventors reserve the right to add additional claims after filing this application to continue the additional claims for other aspects of the system.

Claims (20)

A first ELR conductor comprising a modified ELR material;
A second ELR conductor comprising the modified ELR material;
A Josephson junction comprising: a barrier material disposed between the first ELR conductor and the second ELR conductor;
The modified ELR material comprises a first layer of ELR material and a second layer of material to be bonded coupled to the ELR material of the first layer, wherein the modified ELR material comprises the A Josephson junction characterized by having improved operating characteristics relative to the operating characteristics of ELR materials only.   The Josephson junction of claim 1, wherein the barrier material comprises an insulating material.   The Josephson junction according to claim 1, wherein the barrier material includes a conductive material.   The Josephson junction according to claim 3, wherein the barrier material includes a conductive metal.   The Josephson junction of claim 1, wherein the barrier material comprises a semiconductive material.   The Josephson junction of claim 1, wherein the barrier material comprises an ELR material.   The Josephson junction of claim 1, wherein the ELR material operates in an ELR state at a temperature greater than 150K.   The Josephson junction of claim 1, wherein the barrier is disposed between the first layer of ELR material of the first conductor and the first layer of ELR material of the second conductor.   9. The Josephson of claim 8, wherein the barrier is further disposed between the second layer of changing material of the first conductor and the second layer of changing material of the second conductor. Bonding.   The Josephson junction of claim 1, wherein the ELR material further comprises a substrate coupled to the first layer of ELR material. A first ELR conductor comprising a modified ELR material;
A second ELR conductor comprising the modified ELR material;
A Josephson junction comprising: a barrier material disposed between the first ELR conductor and the second ELR conductor;
The modified ELR material comprises a first layer of ELR material and a second layer of modifying material bonded to the first layer of ELR material, wherein the modified ELR material is 150K. Josephson junction, characterized by having a higher critical temperature.   The Josephson junction of claim 11, wherein the barrier material comprises an insulating material.   The Josephson junction of claim 11, wherein the barrier material comprises a conductive material.   The Josephson junction of claim 13, wherein the barrier material comprises a conductive metal.   The Josephson junction of claim 11, wherein the barrier material comprises a semiconductive material.   The Josephson junction of claim 11, wherein the barrier material comprises an ELR material.   12. The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each include an ELR wire formed from the ELR material.   The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each include an ELR nanowire formed from the ELR material.   The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each include an ELR trace formed from the ELR material. A circuit including a plurality of Josephson junctions, each of the plurality of Josephson junctions,
A first ELR conductor comprising a modified ELR material;
A second ELR conductor comprising the modified ELR material;
A barrier material disposed between the first ELR conductor and the second ELR conductor;
The modified ELR material has a first layer of ELR material and a second layer of modifying material bonded to the ELR material of the first layer, and the modified ELR material is 150K. A circuit characterized by having a higher critical temperature.