CN103900726B - Piezoelectric temperature sensor - Google Patents
Piezoelectric temperature sensor Download PDFInfo
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- CN103900726B CN103900726B CN201410128576.6A CN201410128576A CN103900726B CN 103900726 B CN103900726 B CN 103900726B CN 201410128576 A CN201410128576 A CN 201410128576A CN 103900726 B CN103900726 B CN 103900726B
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Abstract
The invention discloses a kind of piezoelectric temperature sensor.This piezoelectric temperature sensor comprises the steps that substrate, described substrate can be acted upon by temperature changes and produce deformation；Piezoelectric semiconductor's layer, is made up of the semi-conducting material with piezoelectric effect, and is fixed on the side of described substrate in insulating manner；First electrode and the second electrode, be fixed on described piezoelectric semiconductor layer, and forms Schottky contacts with described piezoelectric semiconductor layer (2)；And measuring circuit, being electrically connected to both ends of to described first electrode and described second electrode of described measuring circuit.Variations in temperature, by piezoelectric semiconductor and the coupling that can vary with temperature the substrate deformed upon, is converted into the change of the signal of telecommunication of output, thus can get high-precision temperature sensor by the present invention.
Description
Technical field
The present invention relates to temperature sensor field, in particular it relates to a kind of piezoelectric temperature sensor.
Background technology
Temperature sensor is the core component of temperature measuring instrument.Temperature sensor kind in the market
Various, the thermal resistance temperature sensor Zeng Yinwei temperature measurement accuracy such as PT100 thermal resistance (platinum resistance thermometer sensor) is high
It is widely used with stable performance, is even made into the station meter of standard.But it is along with scientific and technological progress, right
Temperature measurement accuracy is had higher requirement, and research can realize the temperature sensor gesture of higher temperature measurement accuracy must
OK.
Summary of the invention
It is an object of the invention to provide a kind of piezoelectric temperature sensor, piezoelectricity is imitated by this piezoelectric temperature sensor
Should combine with quasiconductor effect, compared with existing PT100 thermal resistance temperature sensor, can realize higher
Temperature measurement accuracy.
To achieve these goals, the present invention provides a kind of piezoelectric temperature sensor, and this piezoelectric temperature senses
Device comprises the steps that substrate, described substrate can be acted upon by temperature changes and produce deformation；Piezoelectric semiconductor's layer,
It is made up of the semi-conducting material with piezoelectric effect, and is fixed on the one of described substrate in insulating manner
Side；First electrode and the second electrode, be fixed on the upper surface of described piezoelectric semiconductor layer, and with described pressure
Electricity semiconductor layer forms Schottky contacts；And measuring circuit, the two ends of described measuring circuit are electrically connected respectively
It is connected to described first electrode and described second electrode.
Preferably, described substrate can be that the two metal layers that deformation quantity is different at different temperatures is constituted
Bimetal leaf.
Preferably, a metal level of described bimetal leaf can be by Ni36Fe64Constitute, another metal level
Can be by Mn75Ni15Cu10Constitute.
Preferably, have described in the semi-conducting material of piezoelectric effect can be ZnO, GaN, ZnS and
Any one in CdSe.
Preferably, described piezoelectric semiconductor layer can be single nano-wire, nano wire film or nanometer thin
Film.
Preferably, described nano wire film can first be prepared on RF magnetron sputtering, then by thin for described nano wire
Film is transferred to the side of substrate and fixes on the substrate in insulating manner.
Preferably, it is thin that the mode that can use Hydrothermal Growth prepares described nano wire on described RF magnetron sputtering
Film.
Preferably, described hydro-thermal method can include that the concentration using zinc nitrate hexahydrate and hexamethylenetetramine is each
For the solution of 120mmol/L, and grow 5 hours at 90 DEG C, be made up of zinc oxide with synthesis
Described nano wire film.
Preferably, the piezoelectric polarization direction of wherein said piezoelectric semiconductor layer is perpendicular to described piezoelectric semiconductor
The plane at layer place.
Preferably, the thickness of described piezoelectric semiconductor layer is much smaller than (such as, 1/50th is the least)
Described substrate thickness.
Preferably, described piezoelectric semiconductor layer can be located at the middle part of described substrate.
Preferably, described first electrode and described second electrode can be located at the two of described piezoelectric semiconductor layer
End.
Preferably, if the semi-conducting material constituting described piezoelectric semiconductor layer is zinc oxide, then institute is constituted
The metal stating the first electrode and/or described second electrode is any one in Ag, Au, Pt and Pd.
Preferably, described first electrode and described second electrode can be prepared in the way of electron beam evaporation
The upper surface of described piezoelectric semiconductor layer
Preferably, described measuring circuit can include power supply and current measuring device, and described power supply provides will not
Puncture the DC source of described piezoelectric semiconductor layer.
By technique scheme, substrate deforms upon so that in piezoelectric semiconductor's layer at different temperatures
Introducing stress, consequent piezoelectric electro will definitely affect electrode and the Schottky barrier of piezoelectric semiconductor's interlayer
Highly, thus affect the current intensity in measuring circuit.According to the change of this current intensity, can be accurately
Obtain the change of temperature, thus realize the piezoelectric temperature sensor with higher precision.
Other features and advantages of the present invention will be described in detail in detailed description of the invention part subsequently.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with
Detailed description below is used for explaining the present invention together, but is not intended that limitation of the present invention.?
In accompanying drawing:
Fig. 1 is the structural representation of the piezoelectric temperature sensor according to the preferred embodiment of the present invention；
Fig. 2 is the electricity at different temperatures of the piezoelectric temperature sensor according to the preferred embodiment of the present invention
The schematic diagram of the rate of change (the right longitudinal axis) of stream response (the left longitudinal axis) and electric current；And
Fig. 3 shows the piezoelectric temperature sensor according to the preferred embodiment of the present invention and tradition PT100
The Sensitivity comparison of temperature sensor.
Detailed description of the invention
Below in conjunction with accompanying drawing, the detailed description of the invention of the present invention is described in detail.It should be appreciated that
Detailed description of the invention described herein is merely to illustrate and explains the present invention, is not limited to this
Bright.In the present invention, in the case of illustrating on the contrary, the noun of locality of use such as " upper and lower " leads to
Refer to direction referring to the drawings.
The open a kind of piezoelectric temperature sensor of the present invention, this piezoelectric temperature sensor comprises the steps that substrate, institute
State substrate to be acted upon by temperature changes and produce deformation；Piezoelectric semiconductor's layer, by having piezoelectric effect
Semi-conducting material is constituted, and is fixed on the side of described substrate in insulating manner；First electrode and
Two electrodes, are fixed on described piezoelectric semiconductor layer, and form schottky junctions with described piezoelectric semiconductor layer
Touch；And measuring circuit, being electrically connected to both ends of to described first electrode and described of described measuring circuit
Second electrode.
The present invention is by piezoelectric effect, quasiconductor effect and the temperature that can vary with temperature the substrate producing deformation
Effect combines, and utilizes substrate to produce deformation when variations in temperature, deformation by stress transfer to suprabasil
Making its internal generation piezoelectricity electromotive force in piezoelectric semiconductor's layer, the existence of piezoelectricity electromotive force will impact gold half (metal
And quasiconductor, it is piezoelectric semiconductor's layer and electrode herein) schottky barrier height of contact surface, thus adjust
The transport property of the carrier in pressure control electricity semiconductor layer.Comprehensive the above, the ultimate principle of the present invention
It is by piezoelectric semiconductor and variations in temperature can be converted into defeated with the coupling of the substrate of temperature deformation
The change of the signal of telecommunication gone out, thus realize temperature sensing.
Fig. 1 is the structural representation of the piezoelectric temperature sensor according to the preferred embodiment of the present invention.This
In embodiment, substrate 1 is bimetal leaf, in several specifications that this bimetal leaf can be the most common
Select, as long as meeting along with this bimetal leaf of variations in temperature has obvious deformation, its thickness model
Enclose can between 0.01mm～1mm, wherein height expanding layer (i.e. two metal levels) composition and join
Ratio can change.Bimetal leaf 1 in the present embodiment includes the low bulk layer Ni being positioned at lower floor36Fe64(i.e.
One metal level) and it is positioned at the highly expanded layer Mn on upper strata75Ni15Cu10(i.e. another metal level), certainly,
Can also highly expanded layer at lower and low bulk layer upper.In present embodiment, the size of bimetal leaf 1 is
5.5cm*1.0cm, thickness is 120um(micron).
Piezoelectric semiconductor's layer 2 can be made up of the semi-conducting material arbitrarily with piezoelectric effect, and by with
The mode (such as, by insulating cement adhesion) of insulation is fixed on the side of described substrate.Selectable tool
The semi-conducting material having piezoelectric effect includes zinc oxide ZnO, gallium nitride GaN, zinc sulfide ZnS and stannum
Cadmium CdSe etc..In present embodiment, the nano wire film that piezoelectric semiconductor's layer 2 is constituted for zinc oxide.
Herein, nano wire film refers to that nano wire is arranged together in the way of closely and the similar thin film that formed
Form.The size of the nano wire film 2 in present embodiment is 2cm*0.5cm, and thickness is 2 μm.
The thickness of piezoelectric semiconductor's layer 2 should be far less that the thickness of (1/50th is the least) substrate 1,
So that thin film is by the biggest stress being perpendicular to bimetal leaf.Owing to being grown directly upon bimetal leaf
Can there is residual stress in the nano wire film on 1, be easily caused film breaks, it is preferable that can first exist
RF magnetron sputtering (such as polyethylene terephthalate (PET) substrate, polyimides (Kapton)
Substrate) upper preparation (such as, in the way of Hydrothermal Growth) nano wire film, then by this nano wire
Thin film is transferred to the side of substrate 1 and fixes (such as, by insulating cement adhesion) in insulating manner.
Preferably, can use the concentration of zinc nitrate hexahydrate and hexamethylenetetramine respectively for the solution of 120mmol/L,
The method growing 5 hours at 90 DEG C, synthesizing zinc oxide nano wire film.Preferably, can be by piezoelectricity
Semiconductor layer 2 is placed in the centre position of substrate 1, preferably to sense the deformation of substrate 1.It is noted that
It is, owing to the piezoelectric effect of piezoelectric semiconductor's layer 2 has the strongest directivity, it should make piezoelectricity partly lead
The piezoelectric polarization direction of body layer 2 is perpendicular to the plane at piezoelectric semiconductor's layer 2 place.
Can be by fixing (such as, by the preparation side of electron beam evaporation to the first electrode 31 and the second electrode 32
Formula) in the upper surface of piezoelectric semiconductor's layer 2.The material constituting electrode 31 and 32 can be can be with pressure
Any metal of Schottky contacts is formed between electricity semiconductor layer 2.Such as, if piezoelectric semiconductor's layer 2 by
Zinc oxide is constituted, then the material constituting electrode 31 and 32 can be from silver Ag, gold Au, platinum Pt and palladium Pd
Select Deng in metal.First electrode 31 and the second electrode 32 can be identical or different electrodes.This
In embodiment, electrode 31 and 32 is Ag electrode.The thickness of electrode 31 and 32 is about in nanometer amount
Level.The position of electrode 31 and 32 is without particular provisions, it is preferable that it can be respectively disposed in piezoelectric semiconductor
Layer 2 position that its Curvature varying is bigger when deformation, the such as two ends of piezoelectric semiconductor's layer 2.This enforcement
In mode, the distance between two electrodes 31 and 32 is 0.5cm.
Measuring circuit 4 in present embodiment can include power supply 41 and the current measurement dress of wire and series connection
Put 42.Being electrically connected to both ends of to described first electrode 31 and described second electrode 32 of measuring circuit 4.
The voltage that power supply 41 provides not can exceed that the breakdown voltage of piezoelectric semiconductor's layer 2.In present embodiment,
Power supply 41 is no more than the DC voltage of 30V.Current measuring device 42 can be read under certain voltage
The current value recorded, to characterize temperature.In addition to the structure used in present embodiment, measuring circuit 4 is also
The measurement of other forms of realized power supply and the electric signal measurement that skilled in the art realises that can be used
Circuit.
According to another embodiment of the present invention, wherein piezoelectric semiconductor's layer 2 can be to pass through CVD
Single nano-wire prepared by (chemical gaseous phase deposition), single nano-wire is fixed by available highly purified silver slurry
On substrate.The a length of micron order of this single nano-wire, its diameter is close to micron order.
According to third embodiment of the present invention, wherein piezoelectric semiconductor's layer 2 can be thickness be nanometer amount
The nano thin-film of level, this nano thin-film can pass through the method system such as magnetron sputtering method, metal vapor deposition
Standby.
As a example by the first embodiment of the invention shown in Fig. 1, when the temperature increases, bimetal leaf 1 is downward
The curvature that (deviating from the side of piezoelectric semiconductor's layer 2) bends becomes big, stress suffered by piezoelectric semiconductor's layer 2
Increasing, the negative pressure electricity electromotive force of the upper surface of piezoelectric semiconductor's layer 2 increases so that electrode 31 and 32 with
The Schottky barrier of the gold of piezoelectric semiconductor's layer 2 half (metal and quasiconductor) contact surface increases, and therefore makes
Obtain the electric current reduction that current measuring device 42 records.Otherwise, when the temperature decreases, bimetal leaf 1 to
The curvature of lower bending diminishes, and stress suffered by piezoelectric semiconductor's layer 2 reduces, the upper table of piezoelectric semiconductor's layer 2
The piezoelectricity electromotive force reduction that face is negative, so that Schottky barrier reduces, hence in so that current measuring device 42
The electric current recorded increases.
Fig. 2 is the current-responsive at different temperatures of piezoelectric temperature sensor as shown in Figure 1 and electric current
The schematic diagram of rate of change, the supply voltage wherein tested is 6V.Transverse axis in Fig. 2 illustrates from 0 DEG C
～the temperature range of 120 DEG C, the left longitudinal axis represents the intensity of the current-responsive under 6V voltage, and unit is micro-
Peace (uA), the right longitudinal axis represents current changing rate.Current changing rate is often to differ at two temperature of 10 DEG C
The variable quantity of electric current weigh, be expressed as | (I(T+10 DEG C)-IT)/IT|, wherein ITRepresent that temperature is that T(is mono-
Position DEG C) time current intensity.
Fig. 3 shows piezoelectric temperature sensor (supply voltage is 6V) as shown in Figure 1 and tradition PT100
The Sensitivity comparison of thermal resistance temperature sensor.Wherein sensitivity S=| IT-I10℃|/I10℃/ (T-10 DEG C).Can
Find out, within the temperature range of 20 DEG C～110 DEG C, according to the piezoelectric temperature of the preferred embodiment of the present invention
The sensitivity of sensor is apparently higher than tradition PT100 temperature sensor, especially, near 30 DEG C,
The sensitivity of piezoelectric temperature sensor is more than 8.6 times of PT100 temperature sensor.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention does not limit
Detail in above-mentioned embodiment, in the technology concept of the present invention, can be to the present invention
Technical scheme carry out multiple simple variant, these simple variant belong to protection scope of the present invention.
It is further to note that each the concrete technology described in above-mentioned detailed description of the invention is special
Levy, in the case of reconcilable, can be combined by any suitable means.In order to avoid need not
The repetition wanted, various possible compound modes are illustrated by the present invention the most separately.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as its
Without prejudice to the thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (14)
1. a piezoelectric temperature sensor, this piezoelectric temperature sensor includes:
Substrate (1), described substrate (1) can be acted upon by temperature changes and produce deformation；
Piezoelectric semiconductor's layer (2), is made up of the semi-conducting material with piezoelectric effect, and with insulation
Mode is fixed on the side of described substrate (1)；
First electrode (31) and the second electrode (32), be fixed on the upper of described piezoelectric semiconductor layer (2)
Surface, and form Schottky contacts with described piezoelectric semiconductor layer (2)；And
Measuring circuit (4), being electrically connected to both ends of to described first electrode of described measuring circuit (4)
And described second electrode (32) (31).
Piezoelectric temperature sensor the most according to claim 1, wherein said substrate (1) is not
The bimetal leaf of two metal levels compositions that synthermal lower deformation quantity is different.
Piezoelectric temperature sensor the most according to claim 2, of wherein said bimetal leaf
Described metal level is by Ni36Fe64Constituting, another described metal level is by Mn75Ni15Cu10Constitute.
4., according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said have
The semi-conducting material of piezoelectric effect is any one in ZnO, GaN, ZnS and CdSe.
5. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said piezoelectricity
Semiconductor layer (2) is single nano-wire, nano wire film or nano thin-film.
Piezoelectric temperature sensor the most according to claim 5, wherein prepares institute on RF magnetron sputtering
State nano wire film, then described nano wire film is transferred to the side of described substrate (1) and with absolutely
The mode of edge is fixed in described substrate (1).
Piezoelectric temperature sensor the most according to claim 6, wherein uses the side of Hydrothermal Growth
Formula prepares described nano wire film on described RF magnetron sputtering.
8. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said piezoelectricity
The piezoelectric polarization direction of semiconductor layer (2) is perpendicular to the plane at described piezoelectric semiconductor layer (2) place.
9. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said piezoelectricity
The thickness of semiconductor layer (2) is less than 1st/50th of described substrate (1) thickness.
10. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said piezoelectricity
Semiconductor layer (2) is positioned at the middle part of described substrate (1).
11. according to the piezoelectric temperature sensor according to any one of claim 1-3, and wherein said first
Electrode (31) and described second electrode (32) are positioned at the two ends of described piezoelectric semiconductor layer (2).
12. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein constitutes described
The material of piezoelectric semiconductor's layer (2) is zinc oxide, constitutes described first electrode (31) and/or described
The metal of two electrodes (32) is any one in Ag, Au, Pt and Pd.
13. according to the piezoelectric temperature sensor according to any one of claim 1-3, and wherein said first
Electrode (31) and described second electrode (32) are prepared in the way of electron beam evaporation and are partly led at described piezoelectricity
The upper surface of body layer (2).
14. according to the piezoelectric temperature sensor according to any one of claim 1-3, wherein said measurement
Circuit (4) includes power supply (41) and current measuring device (42), and described power supply (41) provides will not
Puncture the DC source of described piezoelectric semiconductor layer.
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| CN201410128576.6A CN103900726B (en) | 2014-04-01 | 2014-04-01 | Piezoelectric temperature sensor |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107065265A (en) * | 2017-05-05 | 2017-08-18 | 广东欧珀移动通信有限公司 | Display device and mobile electronic terminal |
| CN109962156A (en) * | 2017-12-22 | 2019-07-02 | 兰州大学 | Device architecture and preparation method thereof based on the regulation of general character face potential barrier |
| CN108054273B (en) * | 2017-12-28 | 2024-03-08 | 中国科学院宁波材料技术与工程研究所 | Field effect transistor type magnetic sensor, preparation method and use method thereof |
| CN109907749B (en) * | 2019-03-29 | 2020-11-17 | 京东方科技集团股份有限公司 | Sensor and electronic device |
| CN110676371A (en) * | 2019-10-14 | 2020-01-10 | 浙江大学 | Switch made of piezoelectric semiconductor material based on thermal effect |
| CN113295292B (en) * | 2021-05-26 | 2023-05-12 | 北京京东方技术开发有限公司 | Temperature sensor and device |
| CN116314046B (en) * | 2023-05-18 | 2023-07-21 | 华中科技大学 | Piezoelectric triode module with adjustable transmission characteristics, and regulation and control method and application thereof |
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| CN201748981U (en) * | 2009-12-31 | 2011-02-16 | 贺小平 | Water thermometer of water heater |
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| JPS60151526A (en) * | 1984-01-18 | 1985-08-09 | Sharp Corp | Temperature sensor |
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| US6034404A (en) * | 1996-12-05 | 2000-03-07 | California Institute Of Technology | Schottky-barrier semiconductor device |
| CN101438139A (en) * | 2006-05-04 | 2009-05-20 | 皇家飞利浦电子股份有限公司 | Integrated temperature sensor |
| CN201748981U (en) * | 2009-12-31 | 2011-02-16 | 贺小平 | Water thermometer of water heater |
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