JP2017174641A - Manufacturing method for display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To expose a terminal electrode in a display device without damaging the terminal electrode.SOLUTION: A manufacturing method for a display device including a pixel part and a terminal part includes: forming a terminal part including a terminal electrode on a first substrate; forming an organic resin layer in the terminal part; forming a pixel electrode in the pixel part; forming an organic layer on the pixel electrode; forming a counter electrode layer in a region including the pixel part and the terminal part; forming a sealing layer on the counter electrode layer in the region including the pixel part and the terminal part; irradiating the region where the organic resin layer is formed with laser light; separating the organic resin layer from the boundary with the terminal electrode; and removing the organic resin layer, the counter electrode layer, and the sealing layer to expose the terminal electrode.SELECTED DRAWING: Figure 10

Description

  One embodiment of the present invention relates to a display device including a terminal portion and a pixel portion, and a method for manufacturing the display device.

  As display devices used in electric appliances and electronic devices, liquid crystal display devices using the electro-optic effect of liquid crystals and organic electroluminescence display devices using organic electroluminescence elements have been developed. In these display devices, a display screen is formed by a plurality of pixels provided on a substrate. Each pixel of the display device is provided with a liquid crystal element or an organic electroluminescence element as a display element. The display device displays a moving image and a still image by driving a pixel portion in which such pixels are arranged by a pixel circuit and a driving circuit including transistors. The display device includes a terminal portion to which a video signal, a timing signal for controlling the operation of the circuit, power, and the like are applied.

  In a display device, an insulating film, a semiconductor film, and a conductive film are stacked, and these thin films are formed into a predetermined shape, whereby a wiring pattern including a transistor and a circuit is formed. In this case, each terminal electrode in the terminal portion needs to be exposed to the outside of the display device. Therefore, a process different from that of a transistor or a display element provided in the pixel portion is required. Specifically, a step of exposing the surface of each terminal electrode in the terminal portion to the outer surface is required.

  For example, in Patent Document 1, in a manufacturing process of a display device, a laser removal layer is provided on a terminal portion, a passivation film covering the entire surface of the substrate is formed, and then the laser removal layer of the terminal portion covered with the passivation film is disclosed. A method of exposing a terminal electrode in a terminal region by irradiating a laser beam on the substrate to generate ablation is disclosed.

JP 2004-165058 A

  However, in the method disclosed in Patent Document 1, since the laser removal layer absorbs the laser beam to cause ablation, foreign matter after ablation remains on the surface of the terminal electrode, which may increase the contact resistance. . Further, if the output of the laser beam is increased in order to reliably remove the laser removal layer, there is a problem that the terminal electrode is damaged. In addition, the ablation of the laser removal layer causes a problem that foreign matters are scattered and contaminated on the display portion.

  In view of such a problem, an embodiment of the present invention aims to expose a terminal electrode without damaging the terminal electrode provided in the display device and without contaminating a peripheral region of the terminal electrode. One of them.

  According to one embodiment of the present invention, there is provided a method for manufacturing a display device including a pixel portion and a terminal portion, wherein a terminal portion including a terminal electrode is formed on a first substrate, and an organic resin layer is formed on the terminal portion. A pixel electrode is formed in the pixel portion, an organic layer is formed on the pixel electrode, a counter electrode layer is formed in a region including the pixel portion and the terminal portion, and a region including the pixel portion and the terminal portion is formed on the counter electrode layer. A sealing layer is formed, the region where the organic resin layer is formed is irradiated with laser light, the organic resin layer is peeled off from the interface with the terminal electrode, and the organic resin layer, the counter electrode layer, and the sealing layer are removed. A method for manufacturing a display device exposing a terminal electrode is provided.

It is a perspective view which shows the structure of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of the pixel part of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a display device according to an embodiment of the present invention, (A) is a cross-sectional view of a terminal portion corresponding to FIG. 5, and (B) is a terminal portion corresponding to FIG. A cross-sectional view is shown. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention, (A) is sectional drawing of the terminal part corresponding to FIG. 8, (B) is the terminal part corresponding to FIG. A cross-sectional view is shown. It is a top view explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention. It is a flowchart figure explaining the manufacturing process of the display apparatus which concerns on one Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes and should not be construed as being limited to the description of the embodiments exemplified below. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, and the like of each part as compared to actual aspects, but are merely examples and limit the interpretation of the present invention. It is not a thing. In addition, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals (or reference numerals with a, b, etc. added to the numerals), and detailed description will be given. It may be omitted as appropriate. In addition, the letters “first” and “second” attached to each element are convenient signs used to distinguish each element, and have no meaning unless otherwise specified. .

  In this specification, when a certain member or region is “on (or below)” another member or region, this is directly above (or directly below) the other member or region unless otherwise specified. Including not only in some cases but also above (or below) other members or regions, that is, when other components are included above (or below) other members or regions . In the following description, unless otherwise specified, in a cross-sectional view, the side on which the second substrate is disposed with respect to the first substrate is referred to as “upper” or “upper”, and vice versa. This will be described as “downward”.

  The first substrate described in this specification has at least one planar main surface, and each element such as an insulating layer, a semiconductor layer, and a conductive layer, or a transistor and a display element is formed on the one main surface. Provided. In the following description, in the cross-sectional view, when it is described as “upper”, “upper layer”, “upper” or “upper surface” with respect to the first main surface of the first substrate as a reference, it is particularly refused. Unless stated otherwise, the description will be made with reference to one main surface of the first substrate.

1 Configuration of Display Device FIG. 1 is a perspective view of a display device 100 according to an embodiment of the present invention. The display device 100 includes a first substrate 102 and a sealing material 118. On the first surface of the first substrate 102, a pixel portion 104, a drive circuit portion 106 (a driver IC 105a, a scanning line drive circuit 105b, a switch circuit 105c), and a terminal portion 110 are provided. In the pixel portion 104, a plurality of pixels 112 are arranged in the row direction and the column direction. In the terminal portion 110, a plurality of terminal electrodes 114 are arranged. The sealing material 118 is disposed on the first surface side of the first substrate 102 so as to cover the pixel portion 104. The terminal part 110 is provided at the end of the first substrate 102 and is disposed outside the sealing material 118. Further, in the drive circuit unit 106, the driver IC 105a is disposed outside the sealing member.

  A signal for operating each circuit (driver IC 105 a, scanning line drive circuit 105 b, switch circuit 105 c) of the drive circuit unit 106 is input via the terminal electrode 114 of the terminal unit 110. The electrode surface of the conductive electrode 114 is exposed and is connected to the flexible printed circuit board 116 by an anisotropic conductive layer. The flexible printed circuit board 116 connects the display device 100 to another functional circuit or an external device.

  As the first substrate 102, a glass substrate or an organic resin substrate is used. For example, a polyimide substrate is used as the organic resin substrate. The organic resin substrate can have a thickness of several micrometers to several tens of micrometers, and a flexible sheet display can be realized. The sealing material 118 is formed of a glass substrate or an organic resin substrate similarly to the first substrate 102. Further, the sealing material 118 is formed by a laminated body in which organic resin layers and inorganic layers are alternately laminated instead of a plate-like member such as the first substrate.

  The pixel portion 104 and the terminal portion 110 provided on the first substrate 102 are manufactured in the same process, rather than manufacturing each region individually. For example, the conductive layer that forms a certain wiring included in the pixel portion 104 and the conductive layer that forms at least part of the terminal electrode 114 of the terminal portion 110 are manufactured by processing the same conductive film.

  FIG. 2 shows a cross-sectional structure of the display device 100. FIG. 3 is a cross-sectional view illustrating details of the pixel 112 in the pixel portion 104. The following description will be given with reference to FIGS. 2 and 3 as appropriate.

  As illustrated in FIG. 2, the display device 100 includes a pixel portion 104, a drive circuit portion 106, a sealing portion 108, and a terminal portion 110. The drive circuit unit 106 includes a circuit region 107a and a wiring region 107b. In the pixel portion 104, the transistor 120, the light emitting element 122, the first capacitor element 124, and the second capacitor element 126 are provided over the first substrate 102. Details of these elements are shown in FIG.

  As shown in FIG. 3, the light-emitting element 122 is electrically connected to the transistor 120. In the transistor 120, the current flowing between the source and the drain is controlled by a video signal applied to the gate, and the light emission luminance of the light emitting element 122 is controlled by this current. The first capacitor element 124 holds the gate voltage of the transistor 120, and the second capacitor element 126 is provided to adjust the amount of current flowing through the light emitting element 122.

  A base insulating layer 128 is provided on the first surface of the first substrate 102. The transistor 120 is provided over the base insulating layer 128. The transistor 120 has a structure in which a semiconductor layer 130, a gate insulating layer 132, and a gate electrode 134 are stacked. The semiconductor layer 130 is made of amorphous or polycrystalline silicon, an oxide semiconductor, or the like. The source / drain electrode 138 is provided on the gate electrode 134 with the first insulating layer 136 interposed therebetween. A second insulating layer 140 as a planarizing layer is provided on the source / drain electrode 138. The first insulating layer 136 is formed of an inorganic insulating material such as silicon oxide or silicon nitride, and the second insulating layer 140 is formed of an organic insulating material such as polyimide or acrylic.

  The light emitting element 122 is provided on the upper surface of the second insulating layer 140. The light-emitting element 122 has a structure in which a pixel electrode 144 electrically connected to the transistor 120, an organic layer 148, and a counter electrode layer 150 are stacked. The light-emitting element 122 is a two-terminal element, and light emission is controlled by controlling the potential between the pixel electrode 144 and the counter electrode layer 150. In addition, a bank layer 154 made of an organic insulating material is provided on the second insulating layer 140 so as to cover the periphery of the pixel electrode 144 and expose the inner region. The counter electrode layer 150 is provided on the upper surface of the organic layer 148 and is provided from the pixel electrode 144 to the upper surface portion of the bank layer 154. Note that the bank layer 154 is formed of an organic resin material so as to cover the peripheral edge of the pixel electrode 144 and form a smooth step at the end of the pixel electrode 144. As the organic resin material, acrylic, polyimide, or the like is used.

  The organic layer 148 is a layer including a light emitting material such as an organic electroluminescent material. The organic layer 148 is formed using a low molecular weight or high molecular weight organic material. In the case of using a low molecular weight organic material, the organic layer 148 includes a light emitting layer containing a light emitting organic material, a hole injection layer, an electron injection layer, a hole transport layer, and an electron transport so as to sandwich the light emitting layer. You may be comprised including a layer etc. For example, the organic layer 148 can have a structure in which a light emitting layer is sandwiched between a hole injection layer and an electron injection layer. In addition to the hole injection layer and the electron injection layer, the organic layer 148 may include a hole transport layer, an electron transport layer, a hole block layer, an electron block layer, and the like as appropriate.

  Note that in one embodiment of the present invention, the light-emitting element 122 has a so-called top emission structure in which light emitted from the organic layer 148 is emitted to the counter electrode layer 150 side. Therefore, the pixel electrode 144 preferably has photoreactivity. The pixel electrode 144 is formed of a light-reflective metal material such as aluminum (Al) or silver (Ag), and also has excellent hole injection properties such as ITO (Indium Tin Oxide) or IZO (Indium). A transparent conductive layer made of Zinc Oxide (indium zinc oxide) and a light reflective metal layer may be laminated.

  Since the counter electrode layer 150 transmits the light emitted from the organic layer 146, the transparent electrode such as ITO (tin oxide-added indium oxide) or IZO (indium oxide / zinc oxide) having translucency and conductivity is used. It is preferably formed of a film.

  The first capacitor element 124 is formed in a region where the semiconductor layer 130 and the first capacitor electrode 135 overlap with the gate insulating layer 132 as a dielectric layer. In addition, the second capacitor 126 dielectrics the pixel electrode 144, the second capacitor electrode 141 provided so as to overlap the pixel electrode, and the third insulating layer 142 provided between the pixel electrode 144 and the second capacitor electrode 141. It is formed as a body layer.

  A sealing layer 152 is provided over the light-emitting element 122. The sealing layer 152 is provided to prevent moisture and the like from entering the light emitting element 122. The sealing layer 152 preferably has a light-transmitting property using an inorganic insulating film such as silicon nitride or aluminum oxide. The sealing layer 152 may have a structure in which the inorganic insulating film and an organic insulating film such as acrylic, polyimide, or epoxy are stacked.

  A color filter layer 160 and a light shielding layer 162 may be provided on the organic layer side of the sealing material 118. When white light is emitted from the light emitting element 122, the light of a specific wavelength band can be used as the emitted light of the pixel 112 by providing the color filter layer 160. In addition, when the light emitted from the light emitting element 122 is light in a specific wavelength band (for example, a blue band, a green band, and a red band), the color filter layer 160 is arranged in accordance with the emitted light, so that the pixel The color purity of the light emitted from 112 can be increased. However, when the organic layer 148 has different materials contained in the light emitting layer between adjacent pixels, the color filter layer 160 and the light shielding layer 162 shown in FIGS. 2 and 3 are not necessary (not shown).

  In FIG. 2, in a circuit region 107a of the driver circuit portion 106, a scanning line driver circuit 105b and a switch circuit 105c are formed by transistors 121a and 121b. For example, the transistor 121a is an n-channel transistor, and the transistor 121b is a p-channel transistor. Further, the counter electrode layer 150 extends from the pixel portion 104 to the wiring region 107b.

  In the wiring region 107b, an opening 164 penetrating the second insulating layer 140 is provided. The opening 164 is provided along at least one side of the pixel portion 104. The second insulating layer 140 is divided into the pixel portion 104 side and the end portion side of the first substrate 102 by the opening 164. The bank layer 154 is similarly divided by the opening 164. The third insulating layer 142 on the second insulating layer 140 and the counter electrode layer 150 provided on the upper surface of the bank layer 154 are provided along the opening 164. That is, the third insulating layer 142 is provided along the side surface of the opening 164 (side surface of the second insulating layer 140) and the bottom surface of the opening 164 (upper surface of the first insulating layer 136).

  As described above, in the wiring region 107b, the second insulating layer 140 and the bank layer 154 formed of an organic insulating material are divided by the opening 164, and are formed of an inorganic material so as to cover the side surface and the bottom surface of the opening 164. By providing the third insulating layer 142 and the counter electrode layer 150, a sealing structure is formed. The third insulating layer 142 is provided in close contact with the bottom of the opening 164. As described above, the second insulating layer 140 and the bank layer 154 formed of an organic insulating material are sandwiched between layers of an inorganic material, so that intrusion of moisture or the like from the sealing portion 108 side to the pixel portion 104 can be prevented. . That is, this sealing structure prevents moisture and the like from entering the region into the pixel portion 104 through the second insulating layer 140 and the bank layer 154 formed of an organic insulating material. The region provided with the opening 164 that separates the second insulating layer 140 and the bank layer 154 can function as a moisture blocking region 172, and the structure can be referred to as a “moisture blocking structure”.

  The drive circuit portion 106 may include a contact portion 170 in which the counter electrode layer 150 is electrically connected to the lower wiring 168. The counter electrode layer 150 is controlled to a predetermined potential by being connected to the wiring 168. Note that in the contact portion 170, when the connection is formed by the wiring 168 b provided on the second insulating layer 140 and the wiring 168 a provided on the first insulating layer 136, the contact hole 167 is provided in the second insulating layer 140. .

  A sealing material 158 is provided in the sealing portion 108. The sealing material 158 bonds the first substrate 102 and the sealing material 118. A region sandwiched between the first substrate 102 and the sealing material 118 is blocked from the atmosphere by the sealing material 158. The pixel portion 104 is provided in a sealed space sandwiched between the first substrate 102, the sealing material 118, and the sealing material 158. Note that a filler 156 may be provided in a gap between the first substrate 102 and the sealing material 118.

  The terminal portion 110 is provided with a terminal electrode 114. The terminal electrode 114 includes a first terminal layer 115a and a second terminal layer 115b. The first terminal layer 115a is provided by the same layer as the conductive layer that forms the source / drain electrodes 138, for example. When the source / drain electrode 138 has a laminated structure in which a titanium (Ti) layer is provided on the upper layer side and the lower layer side of aluminum (Al), the first terminal layer 115a also has the same layer structure. The first terminal layer 115a may be formed of the same conductive layer as the gate electrode 134. The second terminal layer 115b is formed of a conductive metal oxide film. For example, the second terminal layer 115b is formed of a transparent conductive film such as ITO or IZO. Since the second terminal layer 115b is harder than the first terminal layer 115a and has conductivity even when oxidized, the second terminal layer 115b is preferably provided as a surface layer of the terminal electrode 114.

  On the first substrate 102, a base insulating layer 128, a gate insulating layer 132, a first insulating layer 136, a second insulating layer 140, a third insulating layer 142, a counter electrode layer 150, and a sealing layer 152 are provided over substantially the entire surface. However, the terminal portion 110 includes a region where the second insulating layer 140, the third insulating layer 142, the counter electrode layer 150, and the sealing layer 152 are disposed at least on the upper layer side of the terminal electrode 114. Due to such a removal region, the terminal electrode 114 is exposed to the outer surface.

  Conventionally, in order to expose the upper surface of the terminal electrode 114, each of the second insulating layer 140, the third insulating layer 142, the counter electrode layer 150, and the sealing layer 152 is performed by a process such as wet etching or dry etching. Yes. On the other hand, in one embodiment of the present invention, the terminal electrode 114 is exposed by a simpler method regardless of the etching process. Hereinafter, the details will be described according to the manufacturing process of the display device 100.

2. Manufacturing method of display device (first embodiment)
A method for manufacturing a display device according to an embodiment of the present invention will be described below with reference to the drawings. The manufacturing method described below corresponds to the display device described with reference to FIGS.

2-1 Formation of Transistor and Interlayer Insulating Layer FIG. 4 shows a base insulating layer 128 and a transistor 120 (including a semiconductor layer 130, a gate insulating layer 132, and a gate electrode 134) of the pixel portion 104 on the first surface of the first substrate 102. And the first capacitor element 124 (formed by the first capacitor electrode 135, the gate insulating layer 132, and the source / drain electrode 138), the transistors 121a and 121b of the driver circuit portion 106, and the first of the terminal portion 110. A stage in which the terminal layer 115a, the first insulating layer 136, the source / drain electrodes 138, and the second insulating layer 140 are formed is shown. The transistor 120 in the pixel portion 104 and the transistors 121a and 121b in the driver circuit portion 106 have the same structure. The first terminal layer 115 a of the terminal portion 110 is formed of the same conductive layer as the source / drain electrode 138 on the first insulating layer 136. The first terminal layer 115a has, for example, a lower layer or a structure in which three layers of a titanium (Ti) layer, an aluminum (Al) layer, and a titanium layer (Ti) are stacked.

  The first insulating layer 136 shown in FIG. 4 is formed of a single layer or a plurality of layers. For example, the first insulating layer 136 is formed by stacking a silicon nitride film and a silicon oxide film. Such a first insulating layer 136 is formed by a plasma CVD method or a sputtering method. The second insulating layer 140 formed on the first insulating layer 136 is formed of an organic insulating material. The organic insulating material preferably includes a polymer material such as polyester, polyamide, polyimide, or polysiloxane. The second insulating layer 140 is formed on substantially the entire surface of the first substrate 102 using such an organic insulating material and using a spin coating method, an inkjet method, a laminating method, a printing method, a dip coating method, a vapor deposition polymerization method, or the like. The The second insulating layer 140 is preferably formed with a thickness of 1 micrometer or more. Accordingly, unevenness due to the transistor 120 or the like is embedded by the second insulating layer 140, and a flat surface can be formed over the first substrate 102.

2-2 Processing of Interlayer Insulating Layer and Formation of Terminal Electrode FIG. 5 shows that in the pixel portion 104, a second capacitor electrode 141 is formed on the second insulating layer 140, penetrates through the second insulating layer 140, and is a source / drain electrode. A step of providing a contact hole 166 and an opening 164 reaching 138 is shown. Note that in the case where the wiring 168 a is provided over the first insulating layer 136, the contact hole 167 is formed in the second insulating layer 140. At the same time as the formation of the contact hole 166, the second insulating layer 140 also removes the portion of the terminal portion 110 that covers the upper surface of the first terminal layer 115a. The second insulating layer 140 is preferably processed to expose the upper surface portion of the first terminal layer 115a and cover the side surface portion. When the second insulating layer 140 is formed of a photosensitive organic insulating material, a light exposure process is performed after the second insulating layer 140 is formed, and the contact hole 166 and the terminal portion 110 are formed by development and baking. A removal pattern is formed.

  The third insulating layer 142 is made of a silicon nitride film or a silicon oxide film. The third insulating layer 142 is formed on substantially the entire surface of the first substrate 102 by a plasma CVD method or a sputtering method without using a shadow mask at the time of film formation. If the third insulating layer 142 is formed after the contact hole is formed, the bottom surface of the contact hole 166 is covered with the third insulating layer 142. In this case, it is preferable that the third insulating layer 142 be provided with an opening 169 overlapping with the contact hole 166. Simultaneously with the formation of the opening 169, the third insulating layer 142 formed on the upper surface of the first terminal layer 115a can be removed.

  FIG. 11A shows a cross-sectional view of the terminal portion 110. As shown in FIG. 11A, at this stage, the terminal electrode 114 is formed with the second terminal layer 115b on the first terminal layer 115a. The second terminal layer 115b is preferably formed after the second insulating layer 140 on the upper surface of the first terminal layer 115a is removed. The second terminal layer 115b may be formed of the same conductive layer as the second capacitor electrode 141, or may be formed of the same conductive layer as other wirings or electrodes formed in the pixel portion 104 or the driver circuit portion 106. Good. The second terminal layer 115b is preferably formed of a transparent conductive film such as ITO or IZO.

  Through the above steps, a circuit including a transistor is formed in the pixel portion 104 and the driver circuit portion 106 over the first substrate 102, and a terminal electrode 114 is formed in the terminal portion 110.

  In the subsequent steps, as shown in FIG. 15, the organic resin layer 117 is formed on the terminal electrode 114 (S201), the pixel electrode 144 is formed (S202), the organic layer is formed (S203), and the counter electrode layer is formed. A film (S204), formation of a sealing layer (S205), attachment of a sealing material (S206), and terminal electrode exposure processing (S207) are performed. Further, when the display panel is multifaceted using a mother glass substrate (large area substrate), a mother glass substrate dividing step (S208) is performed between steps S206 and S208.

2-3 Formation of Organic Resin Layer at Terminal Portion FIG. 6 shows a step of providing the organic resin layer 117 at the terminal portion 110 (S201). FIG. 11B is a cross-sectional view of the terminal portion 110 at this stage. The organic resin layer 117 is provided so as to cover the entire surface of the terminal electrode 114. The organic resin layer 117 is formed in the region of the terminal portion 110 by applying a solution containing a precursor of an organic resin material to the first substrate, and exposing and developing. As the organic resin layer 117, an organic resin material such as polyimide, polyamide, polyimide amide, acrylic, or epoxy is used. Among these, it is preferable to use polyimide from the viewpoint of ease of peeling by laser processing and certainty. The organic resin layer 117 may be formed simultaneously with the bank layer 154 described later.

2-4 Formation of Pixel Electrode FIG. 7 shows a step of forming the pixel electrode 144 (S202). The pixel electrode 144 is formed of a transparent conductive film such as ITO or IZO as a transparent conductive film when light emitted from the light emitting element 122 is emitted to the first substrate 102 side. Further, as in the present embodiment, when light from the light emitting element 122 is emitted to the counter electrode layer 150 side, a metal such as aluminum (Al) or silver (Ag), or an alloy thereof is used. Alternatively, the pixel electrode 144 is formed by stacking these metal layers and a conductive metal oxide layer. For example, the pixel electrode 144 is manufactured with a stacked structure (for example, ITO / Ag / ITO or the like) in which a metal layer is sandwiched between conductive metal oxide layers. In addition, the second capacitor element 126 is formed by the pixel electrode 144, the second capacitor electrode 141, and the third insulating layer 142 sandwiched therebetween.

  In the driver circuit portion 106, in order to form the contact portion 170 of the counter electrode layer 150, a wiring 168b connected to the wiring 168a is formed in the contact hole 167 formed in the second insulating layer 140. The wiring 168b can be formed using the same conductive layer as the pixel electrode 144.

  After the pixel electrode 144 is formed, the bank layer 154 is formed using an inorganic insulating material or an organic insulating material. The bank layer 154 buryes the steps due to the contact holes 166 and 167 formed in the end portion of the pixel electrode 144 and the second insulating layer 140. Such a bank layer 154 may also be referred to as a partition wall or a rib. The bank layer 154 can be formed using a material that can be used for the second insulating layer 140 such as acrylic or polyimide. The bank layer 154 is formed with an opening so as to expose the pixel electrode 144, the bottom of the opening 164, and the upper surface of the wiring 168b. The end of the opening of the bank layer 154 is preferably a gentle taper. This is because if the edge of the opening of the bank layer 154 has a steep gradient, the step coverage of the organic layer 148 or the like to be formed later is deteriorated, which tends to cause defects. The bank layer 154 is formed so as not to be provided on the upper surface of the terminal electrode 114 in the terminal portion 110. That is, as described above, when the opening of the bank layer 154 is formed, the bank layer 154 is formed so that the upper surface of the terminal electrode 114 is also opened.

2-5 Formation of Organic Layer, Counter Electrode Layer, and Sealing Layer FIG. 8 shows the steps of forming the organic layer 148, the counter electrode layer 150, and the sealing layer 152 (S203, S204, S205). FIG. 12A is a cross-sectional view of the terminal portion 110 at this stage.

  The organic layer 148 is formed so as to overlap at least the pixel electrode 144 (S203). For example, the organic layer 148 is formed so as not to be deposited on the terminal portion 110 using a shadow mask by a vacuum deposition method. The organic layer 148 is a layer containing an organic electroluminescent material, and is formed of a single layer or a plurality of layers. For example, the organic layer 148 is formed by appropriately combining a carrier injection layer, a carrier transport layer, a light emitting layer, a carrier blocking layer, an exciton blocking layer, and the like. Note that the organic layer 148 may be formed such that the materials included in the light-emitting layer and the adjacent pixels are different, and other layers such as a carrier transport layer have the same structure. Thereby, different emission colors can be obtained between adjacent pixels, and full color display is possible. Conversely, the same organic layer 148 may be used in all pixels. In this case, for example, the organic layer 148 that emits white light may be formed so as to be shared by all pixels, and the wavelength of light extracted from each pixel may be selected using a color filter or the like.

  After the organic layer 148 is formed, the counter electrode layer 150 is formed (S204). As the counter electrode layer 150, a light-transmitting conductive layer is formed by a sputtering method. In this embodiment, since the light-emitting element 122 is a top emission type that emits light from the counter electrode layer 150 side, the thickness of the counter electrode layer 150 is preferably uniform. In this embodiment, when the counter electrode layer 150 is formed, a method that does not use a shadow mask is employed so that foreign matter does not adhere to the deposition surface. A shadow mask has a structure in which an opening is provided in a metal or ceramic member, and a film is formed in the opening by placing it close to or in contact with the substrate, and in other areas. Is a mask that shields the film from being formed.

  In a sputtering apparatus, a shadow mask is repeatedly used. Since a film is deposited on the shielding surface of the shadow mask, a regeneration process for removing the film is performed after a certain number of uses. However, if foreign matter that cannot be easily removed by the regeneration process remains in the shadow mask, it may adhere to the substrate as foreign matter at the next film formation. If foreign matter adheres to any location on the deposition surface of the first substrate 102 during the formation of the counter electrode layer 150, a defect may be formed in the sealing layer 152 formed in a subsequent process. For example, a region where the film thickness is reduced around the foreign material is formed, or a crack is generated. Such a defective portion of the sealing layer 152 becomes an intrusion path of moisture or the like and causes deterioration of the light emitting element 122, which is not preferable.

  In order to deal with such a problem, in the present embodiment, by forming a film without using a shadow mask as described above, it is possible to prevent foreign matter from adhering to the counter electrode layer 150 when it is manufactured. Note that as the counter electrode layer 150, a metal film such as aluminum (Al) or gold (Au) having a thickness enough to transmit visible light, or a transparent conductive film such as ITO or IZO is used. In this case, a thin film such as Li—Al, Mg—Ag, or Mg—Al may be provided between the organic layer 148 and the carrier injectability.

  The counter electrode layer 150 is provided from the pixel portion 104 to the contact portion 170 provided in the driver circuit portion 106, whereby electrical connection with the wiring 168 b is formed in the contact portion 170. In addition, since no shadow mask is used, the counter electrode layer 150 is also formed in the region of the terminal portion 110. In this case, as shown in FIG. 12A, since the organic resin layer 117 is formed on the terminal electrode 114, the counter electrode layer 150 is prevented from being in direct contact with the terminal electrode 114.

  After forming the counter electrode layer 150, the sealing layer 152 is formed (S205). The sealing layer 152 has one function of preventing moisture from entering the light-emitting element 122 from the outside. The sealing layer 152 is preferably formed using a film having a high barrier property against water vapor. For example, the sealing layer 152 is preferably formed using an inorganic insulating material such as silicon nitride, silicon oxide, silicon nitride oxide, or silicon oxynitride. Alternatively, the sealing layer 152 may be formed using an organic insulating material including acrylic resin, polysiloxane, polyimide, polyester, or the like in combination with the above-described layer using an inorganic insulating material. For example, the sealing layer 152 may have a three-layer structure in which the above-described layers of the inorganic insulating material are provided on the lower layer side and the upper layer side of the organic insulating layer made of the organic insulating material. As described above, even if a plurality of inorganic insulating layers having water vapor barrier properties are provided via the organic insulating layer, even if some of the inorganic insulating layers have defects such as pinholes, other inorganic insulating layers The layer can compensate for the defects and increase the water vapor barrier property.

  If the sealing layer 152 is an inorganic insulating layer, it is formed by sputtering or plasma CVD. Moreover, if it is an organic insulating layer, it can form into a film by the apply | coating method, vapor deposition polymerization method, etc. Such a sealing layer 152 is formed on substantially the entire surface of the first substrate 102 without using a shadow mask or the like. As shown in FIG. 12A, the counter electrode layer 150 and the sealing layer 152 are formed on the organic resin layer 117 in which the terminal electrode 114 is embedded in the terminal portion 110.

  Here, in the opening 164 of the second insulating layer 140, a sealing layer 152 is further formed in a region where the first insulating layer 136 and the third insulating layer 142 are in contact with each other on the bottom surface, thereby further improving the barrier property against water vapor. Can be increased. Further, the sealing layer 152 is provided so as to cover the contact portion 170, whereby the reliability of the electrical connection state between the counter electrode layer 150 and the wiring 168b can be improved.

2-6 Formation of Sealant Thereafter, as shown in FIG. 9, the sealant 118 is provided on the first substrate 102 from above the sealing layer 152 (S206). When the sealing material 118 is a light-transmitting glass or plastic plate-like member, the sealing material 118 is attached to the first substrate 102 by the sealing material 158. The sealing material 118 may be provided with a color filter layer 160 and a light shielding layer 162 in accordance with the arrangement of the pixels. The light-blocking layer 162 is preferably formed using a metal having a relatively low reflectance such as chromium or molybdenum, or a resin material containing black or a similar colorant. This has a function of blocking scattered light other than the light emitted from the light emitting element 122, reflection of external light, and the like. The color filter layer 160 can be different for each adjacent pixel, and can be formed to extract, for example, red, green, and blue light emission. The light shielding layer 162 and the color filter layer 160 may be provided on the counter substrate via a base film, or an overcoat layer may be further provided so as to cover the light shielding layer 162 and the color filter layer 160.

  Note that the sealing material 118 is provided on the first substrate 102 so as to cover at least part of the pixel portion 104 and the driver circuit portion 106, and is disposed so as not to overlap with the terminal portion 110. . The first substrate 102 and the sealing material 118 are disposed with a gap. A filler 156 may be provided in the gap between the first substrate 102 and the sealing material 118. In addition, the gap may be filled with an inert gas. When using a filler, it is preferable to have high transparency with respect to visible light. When fixing the sealing material 118 to the first substrate 102, the gap may be adjusted so that a spacer is interposed.

2-7 Removal of Organic Resin Layer Next, as shown in FIG. 10, a process of exposing the terminal electrode 114 is performed in the terminal portion 110 (S207). In the steps so far, at least the organic resin layer 117, the counter electrode layer 150, and the sealing layer 152 are formed on the terminal electrode 114. In this embodiment, as shown in FIG. 12B, the organic resin layer 117 is peeled off from the interface between the terminal electrode 114 and the third insulating layer 142 to expose the terminal electrode 114.

The organic resin layer 117 is peeled off by irradiation with laser light 174. Various lasers can be used as the light source of the laser beam 174. For example, an excimer laser that pulsates and outputs ultraviolet light can be used. Further, as will be described later, laser processing for cutting the glass substrate and laser processing for exposing the terminal electrode 114 can be performed as a continuous process. A carbon dioxide laser (CO ₂ laser) is used as a laser for cutting the glass substrate. In this case, both processes can be performed by making the laser output when peeling the organic resin layer 117 smaller than the laser output when cutting the glass.

  In this embodiment, the counter electrode layer 150 is a transparent conductive film, and the sealing layer 152 is made of an inorganic insulating film such as a silicon nitride film or an organic insulating film such as acrylic, polyimide, or epoxy. Has light properties. Therefore, the organic resin layer 117 can be peeled by irradiation with the laser light 174 from the sealing layer 152 side.

  By reducing the adhesion of the organic resin layer 117 to the ground (second terminal layer 115b, third insulating layer 142) by laser treatment, the organic resin layer 117 is attached to the second terminal layer 115b of the terminal electrode 114 and The third insulating layer 142 can be peeled off from the interface. In this case, if the second terminal layer 115b is ITO or IZO even if it is instantaneously heated to such an extent that the organic resin layer 117 is thermally affected, the melting point is about 1500 to 1900 ° C. When the third insulating layer 142 is a silicon nitride film, the melting point is about 1900 ° C., so that these are hardly affected by heat. Therefore, by peeling the organic resin layer 117 from the base surface by irradiation with the laser light 174, the counter electrode layer 150 and the sealing layer 152 formed thereover can be removed at once.

  In this embodiment, since the sealing material 118 is provided in the pixel portion 104 at the stage of exposing the terminal electrode 114, even if foreign matter is scattered by laser processing, the region of the pixel portion 104 is contaminated by the foreign matter. You do n’t have to.

  As described above, the display device 100 having the structure described in FIG. 2 can be manufactured. According to one embodiment of the present invention, the organic resin layer 117 is provided on the terminal portion 110, the counter electrode layer 150 and the sealing layer 152 are formed, and then the organic resin layer 117 is peeled off to perform a process such as etching. The terminal electrode 114 can be exposed without performing the above. By omitting the etching letter for exposing the terminal electrode 114, it is possible to prevent the light-emitting element 122 from being deteriorated by entering the region where the etchant or moisture is sealed.

  In this embodiment, the case where an organic resin layer is used in the terminal portion 110 is shown, but the present invention is not limited to this. For example, other materials may be provided instead of the organic resin layer as long as it is a member whose adhesion to the base surface is reduced by laser light irradiation.

  Moreover, although this embodiment illustrated about the display apparatus provided with a light emitting element in a pixel, this invention is not limited to this, For example, it can apply also to a liquid crystal display device.

3. Manufacturing method of display device (second embodiment)
When the first substrate 102 is a large-area substrate called a mother glass substrate and a plurality of display devices are separated from the substrate, a process of exposing the terminal electrodes as shown in FIG. 15 (S207) After that, a process of cutting the first substrate 102 is performed (S208).

  FIG. 13 shows a mode in which a plurality of display devices 100 are formed on the first substrate 102 which is a mother glass substrate. Since the cutting of the first substrate 102 and the exposure process of the terminal electrode 114 are both performed by irradiation with the laser beam 174, this process can be executed as a series of continuous processes. Further, if the laser light 174 irradiated to the organic resin layer 117 is condensed by a cylindrical lens or the like so that the irradiation surface is linear, a plurality of regions of the terminal portion 110 can be processed simultaneously. Thereby, productivity can be improved.

  In addition, when both the process which exposes the terminal electrode 114, and the process which cut | disconnects a mother glass substrate are performed by irradiation of a laser beam, you may perform substantially simultaneously as a series of processes. Moreover, you may perform the process which exposes a terminal electrode after cut | disconnecting a mother glass substrate irrespective of the procedure shown in FIG. In any case, the manufacturing method of the display device according to the present embodiment does not significantly reduce the productivity, and the same equipment can be used in the laser device.

4. Manufacturing method of display device (third embodiment)
FIG. 14 shows a case where the process in the present embodiment is applied to the manufacture of a sheet display. A sheet display is a flexible display device in which members corresponding to a first substrate and a sealing material are thin, sheet-like, and flexible. In the sheet display, an organic resin film such as polyimide is used as the first substrate 102. In this case, the flexible organic resin film is difficult to handle in the manufacturing process. Therefore, it is flowed to the manufacturing process in a state of being attached to the support substrate. That is, in the manufacturing process of the transistor and the light emitting element, the sheet-like first substrate 102 is attached to the support substrate 103, and the first substrate 102 is peeled from the support substrate 103 at the final stage of the process. This step is performed, for example, after the terminal electrode exposure process (S207) as shown in FIG. Further, when the support substrate 103 is a mother glass substrate, for example, it is performed after the mother glass substrate is cut (S208).

  As shown in FIG. 14, laser light 174 is irradiated in the process of peeling the first substrate 102 from the support substrate 103. By irradiating the first substrate 102 with the laser beam 174, the adhesion to the support substrate 103 is reduced, and peeling is easily performed. This laser treatment is the same as the treatment for exposing the terminal electrode 114 by irradiating the organic resin layer 117 with the laser beam 174. That is, the first substrate 102 is peeled by irradiating the laser beam 174 from the support substrate 103 side, and the organic resin layer 117 is peeled by irradiating the terminal region with the laser light 174 from the first substrate 102 side. As a laser light source in these processes, for example, an excimer laser that pulsates ultraviolet light can be used.

  This process of exposing the terminal electrode 114 can also be performed at the same timing as the laser process of peeling the first substrate 102 that is an organic resin film from the support substrate 103. Therefore, the productivity of the display device is not significantly reduced, and the same equipment can be used in the laser device. Further, except for the process of peeling the first substrate 102 from the support substrate 103, it is the same as the first embodiment or the second embodiment described as the manufacturing method, and has the same effects.

DESCRIPTION OF SYMBOLS 100 ... Display apparatus, 102 ... 1st board | substrate, 104 ... Pixel part, 105a ... Driver IC, 105b ... Scan line drive circuit, 105c ... Switch circuit, 106 ... Drive Circuit part 107a ... Circuit area 107b ... Wiring area 108 ... Sealing part 110 ... Terminal part 112 ... Pixel 114 ... Terminal electrode 115a ... 1 terminal layer, 115b ... 2nd terminal layer, 116 ... flexible printed circuit board, 117 ... organic resin layer 118 ... sealing material, 120 ... transistor, 121 ... transistor, 122 ... Light-emitting element, 124 ... First capacitor element, 126 ... Second capacitor element, 128 ... Base insulating layer, 130 ... Semiconductor layer, 132 ... Gate insulating layer, 134 ...・ Gate electrode, 135 .. First capacitance electrode, 136... First insulation layer, 138... Source / drain electrode, 140... Second insulation layer, 141. Layer, 144 ... pixel electrode, 148 ... organic layer, 150 ... counter electrode layer, 152 ... sealing layer, 154 ... bank layer, 156 ... filler, 158 ... Sealing material, 160 ... color filter layer, 162 ... light shielding layer, 164 ... opening, 166 ... contact hole, 167 ... contact hole, 168 ... wiring, 169 ... opening , 170 ... contact part, 172 ... moisture blocking region 174 ... laser light

Claims (10)

A manufacturing method of a display device including a pixel portion and a terminal portion,
Forming a terminal portion including a terminal electrode on the first substrate;
Forming an organic resin layer on the terminal portion;
Forming a pixel electrode in the pixel portion;
Forming an organic layer on the pixel electrode;
Forming a counter electrode layer in a region including the pixel portion and the terminal portion;
Forming a sealing layer on the counter electrode layer in a region including the pixel portion and the terminal portion;
The region where the organic resin layer is formed is irradiated with laser light, the organic resin layer is peeled off from the interface with the terminal electrode, and the organic resin layer, the counter electrode layer, and the sealing layer are removed. A method of manufacturing a display device, wherein the terminal electrode is exposed.   2. The method of manufacturing a display device according to claim 1, wherein the organic resin layer is formed on the terminal portion by applying a solution containing a precursor to substantially the entire surface of the first substrate and performing exposure and development processes.   The method for manufacturing a display device according to claim 1, wherein a polyimide layer is formed as the organic resin layer.   2. The display device according to claim 1, wherein after forming the sealing layer, the second substrate is bonded to face the first substrate, and then the region where the organic resin layer is formed is irradiated with laser light. Manufacturing method.   The method for manufacturing a display device according to claim 1, wherein the counter electrode layer is formed on substantially the entire surface of the first substrate.   The method for manufacturing a display device according to claim 1, wherein the counter electrode is formed of a transparent conductive film.   The method for manufacturing a display device according to claim 1, wherein the laser light is irradiated from the sealing layer side.   The method for manufacturing a display device according to claim 1, wherein the first substrate is a mother glass substrate, and the mother glass substrate is divided after exposing the terminal electrodes.   The method for manufacturing a display device according to claim 1, wherein the first substrate is formed of an organic resin material on a support substrate.   The method for manufacturing a display device according to claim 9, wherein the first substrate is peeled from the support substrate after the terminal electrode is exposed.

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