JP2017139263A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of easily depositing a material film which has less distortion and more uniform film thickness and more uniform film quality.SOLUTION: A semiconductor device manufacturing method of the present embodiment is a manufacturing method of a semiconductor device including a stage capable of mounting a substrate, a first supply part for supplying a group III element-containing gas to a surface of the substrate and a second supply part for supplying a radical or ion of a group V element-containing gas to a surface of the substrate. The semiconductor device manufacturing method comprises the steps of: rotating the substrate on the stage; periodically supplying the group III element-containing gas to the substrate or supplying the group III element-containing gas with a supply amount based on the rotation period of the substrate by the first supply part; and supplying a radical or ion of the group V element-containing gas to the substrate by the second supply part.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a method for manufacturing a semiconductor device.

  A film forming apparatus such as a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus, for example, decomposes a group V source gas and a group III source gas and reacts them on a semiconductor wafer to form a crystalline film such as a metal nitride on the semiconductor wafer. Form a film.

  However, in order to thermally decompose the group V source gas on the substrate, a high temperature exceeding 1000 ° C. is required, and the III-V crystal film formed at such a high temperature is cooled by the thermal stress difference with the substrate. Later it will be distorted. In addition, when the group V source gas is decomposed and supplied by a method such as plasma discharge without relying on thermal decomposition depending on the substrate temperature, a shower head disposed between the source of the group V source gas and the stage is used. The group V source gas and the group III source gas are supplied respectively, but the shower head gets in the way of the ions and radicals of the group V source gas, and the ions and radicals of the group V source gas are difficult to reach the substrate. On the other hand, when the group III source gas is supplied through the nozzle, the film thickness and film quality of the crystal film vary on the surface of the semiconductor wafer, although they do not interfere with the ions and radicals of the group V source gas.

JP 2003-142404 A US Patent Publication No. 2014/0037865

  Provided is a method for manufacturing a semiconductor device, in which a material film with less distortion and a more uniform film thickness and film quality can be easily formed.

  The method of manufacturing a semiconductor device according to the present embodiment includes a stage on which a substrate can be mounted, a first supply unit that supplies a group III element-containing gas onto the substrate, and radicals or ions of a group V element-containing gas on the substrate. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus including a second supply unit that supplies a semiconductor device. In this method, the substrate on the stage is rotated. The first supply unit periodically supplies the group III element-containing gas to the substrate in synchronization with the rotation period of the substrate. The second supply unit supplies radicals or ions of the group V element-containing gas to the substrate.

Schematic which shows an example of a structure of the MOCVD apparatus 1 according to 1st Embodiment. The figure which shows an example of a structure of the 1st supply part. The graph which shows the supply amount of the III group element containing gas in the 1st supply part. The flowchart which shows an example of the film-forming method by 1st Embodiment. The timing diagram which shows the supply operation | movement of trimethylgallium, and the supply operation | movement of a nitrogen radical or nitrogen ion. Schematic which shows an example of a structure of the MOCVD apparatus 2 according to 2nd Embodiment. The figure which shows an example of a structure of the 1st supply part 30 by 2nd Embodiment. The graph which shows the supply amount of the III group element containing gas in the 1st supply part. The graph which shows the supply_amount | feed_rate of the trimethylgallium as a group III element containing gas, and the supply_amount | feed_rate of the nitrogen radical or nitrogen ion as a V group element. The figure which shows the 1st supply part 30 according to the modification 2 of 1st Embodiment. The figure which shows the 1st supply part 30 according to the modification 2 of 2nd Embodiment.

  Embodiments according to the present invention will be described below with reference to the drawings. This embodiment does not limit the present invention.

(First embodiment)
FIG. 1 is a schematic diagram showing an example of the configuration of a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus 1 (hereinafter also simply referred to as apparatus 1) according to the first embodiment. The apparatus 1 includes a chamber 10, a stage 20, a first supply unit 30, a second supply unit 40, a heater 50, a drive unit 55, and a controller 60.

  The inside of the chamber 10 is evacuated to a reduced pressure state by a vacuum pump (not shown). The chamber 10 accommodates a stage 20, a first supply unit 30, a second supply unit 40, a heater 50, and the like.

  The stage 20 can mount the substrate W, and can rotate the substrate W. The substrate W may be, for example, a silicon substrate, a sapphire substrate, a SiC substrate, or the like.

  The first supply unit 30 supplies a group III element-containing gas onto the substrate W. The group III element-containing gas is, for example, an organometallic gas containing a group III element such as aluminum (Al), gallium (Ga), or indium (In). The organometallic gas is, for example, a gas such as trimethylaluminum, trimethylgallium, or trimethylindium. In the present embodiment, the first supply unit 30 is a hollow nozzle, for example, and extends from the center of the substrate W to the end of the substrate W. Further, the first supply unit 30 has a plurality of holes extending from the center of the substrate W to the end of the substrate W toward the substrate W. The hole has a size, number, or opening area that is substantially proportional to the distance from the center portion to the end portion of the substrate W. A more detailed configuration of the holes of the first supply unit 30 will be described later with reference to FIGS. 2 (A) to 2 (C).

  By supplying the group III element-containing gas to the first supply unit 30, the group III element-containing gas is supplied to the substrate W through the holes. Thus, the first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center to the end of the substrate W. That is, the first supply unit 30 increases the supply amount of the group III element-containing gas between the central part and the end part of the substrate W as the distance from the central part of the substrate W increases. The group III element-containing gas is thermally decomposed on the substrate W, and the group III element adheres to the surface of the substrate W. The first supply unit 30 is disposed closer to the stage 20 and the substrate W than the second supply unit 40 (a position lower than the second supply unit 40). Thereby, the group III element adheres to the substrate W before being combined with the group V element from the second supply unit 40. The group III element adheres to the substrate W and then combines with the group V element to form a crystal film of the group III-V compound.

  The second supply unit 40 supplies radicals or ions of the group V element-containing gas onto the substrate W. The group V element-containing gas is, for example, a gas containing radicals or ions of group V elements such as nitrogen (N), phosphorus (P), and arsenic (As). In this embodiment, the 2nd supply part 40 is a plasma source which makes a group V element a plasma state, for example. Therefore, the group V element-containing gas is introduced into the second supply unit 40, is converted into plasma, and is supplied into the chamber 10 as radicals or ions. The radicals or ions of the group V element-containing gas are supplied onto the substrate W and are combined with the group III element on the surface of the substrate W. Thereby, a crystal of the III-V group compound is formed on the surface of the substrate W.

  The heater 50 may be a hot plate built in the stage 20 as shown in FIG. 1, or a lamp or the like provided above the stage 20 (not shown). The heater 50 can heat the substrate W on the stage 20 to about 1000 ° C.

  The drive unit 55 rotates the stage 20 as indicated by an arrow. The controller 60 controls the drive unit 55 to control the rotation speed (rotation cycle) of the stage 20. The controller 60 can also control the flow rate of the source gas from the first and second supply units 30 and 40.

  FIG. 2A to FIG. 2C are diagrams illustrating an example of the configuration of the first supply unit 30. In the present embodiment, the first supply unit 30 is an elongated hollow nozzle. 2A to 2C show the first supply unit 30 as viewed from the substrate W side, and show a configuration example of holes provided in the bottom of the first supply unit 30. FIG. The first supply unit 30 is positioned above the center side portion (the front end portion of the first supply unit 30 corresponding to the center portion of the substrate W) C located above the center portion of the substrate W and the end portion of the substrate W. A plurality of holes H are formed between the edge side portion (intermediate portion of the first supply unit 30 corresponding to the end portion of the substrate W) E1.

  In FIG. 2A, the opening area of the hole H is relatively small in the center side portion C of the first supply unit 30, and gradually increases as it approaches the edge side portion E1. For example, the hole H has a size (opening area) that is substantially proportional to the distance from the center to the end of the substrate W. As a result, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W. In other words, the first supply unit 30 can supply the group III element-containing gas to the fan-shaped region of the substrate W having a certain central angle θa.

  In FIG. 2B, the opening areas of the plurality of holes H are substantially equal, but the number of holes H differs between the center side portion C and the edge side portion E1 of the first supply unit 30. That is, in FIG. 2B, the number of holes H is relatively small in the center side portion C of the first supply unit 30, and gradually increases as it approaches the edge side portion E1. That is, the number of holes H is provided from the center part to the end part of the substrate W in a number substantially proportional to the distance from the center part. As a result, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W. In other words, the first supply unit 30 can supply the group III element-containing gas to the fan-shaped region of the substrate W having a certain central angle θb.

  2C, as in FIG. 2B, the number of holes H differs between the center side portion C and the edge side portion E1 of the first supply unit 30. FIG. In FIG. 2C, the opening area of the hole H is smaller than that of the hole H of FIG. 2B, and the number of holes H continuously changes between the center side portion C and the edge side portion E1. doing. Therefore, when expressed in terms of the density of the holes H, the density of the holes H is relatively small in the center side portion C of the first supply unit 30 and gradually increases as it approaches the edge side portion E1. That is, the density of the holes H increases substantially in proportion to the distance from the center portion to the end portion of the substrate W. As a result, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W. In other words, the first supply unit 30 can supply the group III element-containing gas to the fan-shaped region of the substrate W having a certain central angle θc.

  The configuration of the first supply unit 30 may be any of FIGS. 2 (A) to 2 (C). The configuration of the holes H of the first supply unit 30 may be arbitrary as long as the group III element-containing gas can be supplied to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W.

  FIG. 3 is a graph showing the supply amount of the group III element-containing gas in the first supply unit 30. The first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center side portion C between the center side portion C and the edge side portion E1.

  The first supply unit 30 is provided over the radius of the substrate W. Therefore, when the substrate W rotates, the circumference of the substrate W to which the first supply unit 30 supplies the group III element-containing gas is short at the center of the substrate W, and the end portion (outer periphery) of the substrate W is short. ), The length of the circumference gradually increases. Therefore, as shown in FIG. 3, the first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center to the end of the substrate W. As a result, the supply amount of the group III element-containing gas is small in the central portion of the substrate W, and the supply amount of the group III element-containing gas gradually increases as it approaches the outer periphery of the substrate W. As a result, the group III element-containing gas is supplied substantially evenly over the entire surface of the substrate W, and the group III element adheres substantially evenly to the surface of the substrate W. A crystal film of a V group compound can be formed on the substrate W.

  In addition, as described with reference to FIGS. 2A to 2C, the first supply unit 30 includes the group III element-containing gas in the sector region having the central angle θa, θb, or θc of the surface of the substrate W. You may think that it supplies. In the fan-shaped region having the central angle θa, θb, or θc, the group III element is supplied in a much larger amount than the group V element. Therefore, in this case, the group V element-containing gas is supplied in a region other than the fan-shaped region of the central angle θa, θb or θc (region of the central angle 2π-θa, 2π-θb or 2π-θc) on the surface of the substrate W. It can be said that it is done. When the substrate W rotates, a group III element-containing gas is supplied in the sector region having the central angle θa, θb, or θc, and a group V element-containing gas is supplied in the region having the central angle 2π-θa, 2π-θb, or 2π-θc. Supplied. Thereby, as will be described later, a high-quality III-V group compound crystal film can be formed on the substrate W.

  Such a crystal of a group III-V compound semiconductor or a group III nitride semiconductor is composed of a group III metal element and a group V element, and the group III metal element is a crystal having a relatively low melting point, The element is a gas at room temperature or has a relatively high vapor pressure. However, when a group III metal element and a group V element are bonded, the bond between the group III element and the group V element is strong and highly ionic. That is, the group III element and the group V element each have a weak bond and a high vapor pressure in the single element state. On the other hand, when a group III-V compound semiconductor is formed by ionic bonding as a compound, the group III element and the group V element are strongly bonded, and the vapor pressure is low (melting point is high).

  When such a III-V compound semiconductor crystal film is epitaxially grown on the underlayer, the crystal structure and lattice length of the underlayer are preferably relatively close to the crystal structure and lattice length of the III-V compound semiconductor. . The III-V compound semiconductor is formed by epitaxial growth on such an underlayer. For example, when a group III nitride semiconductor is grown on an underlayer, a sapphire substrate, an SiC substrate, a silicon substrate having a (111) plane as a surface, or the like is used as the underlayer. In an atmosphere in which an excessive amount of group V material vapor is supplied, a group III material is supplied onto the underlying layer. The group III raw material reaching the surface of the underlayer is combined with the group V raw material, and a thin film crystal layer of a group III nitride semiconductor such as gallium nitride is epitaxially grown on the underlayer.

  Depending on the ratio of the supply amounts of the Group III material and the Group V material (hereinafter also referred to as the V / III ratio), the timing until the Group III material is combined with the Group V material to form crystals differs. For this reason, the way of crystal growth of the group III nitride semiconductor differs depending on the V / III ratio. For example, when the supply amount of the group V raw material is much larger than the supply amount of the group III raw material (when the V / III ratio is very large), the group III atoms are strongly bonded to the group V atoms on the surface of the underlayer in a short time. Therefore, it cannot move (migrate) on the surface of the underlayer. Accordingly, the group III nitride semiconductor crystal grows in the thickness direction of the underlying layer (substrate) in response to the supply of the group III material.

  On the other hand, when the supply amount of the group V raw material is approximately the same as the supply amount of the group III raw material (when the V / III ratio is close to 1), the group III atom is bonded to the group V atom on the surface of the underlayer. It takes a relatively long time. For this reason, the group III atoms can move (migrate) on the surface of the underlayer. Therefore, the group III atom can be bonded to the group V atom after moving to a stable position in the underlayer or crystal. In this case, since the group III nitride semiconductor grows at a stable position, the quality of the crystal can be improved. Preferably, the V / III ratio is equal to 1. In this case, the group III nitride semiconductor may form a fine step or may grow while forming a plane orientation (facet plane) different from the surface of the underlying layer. Controlling such a growth mode makes it possible to control defects (dislocations) and the like during growth, leading to an improvement in the crystal quality of the group III nitride semiconductor.

  If the V / III ratio is much less than 1, a defect portion having no group V atom is generated in the crystal lattice, and the quality of the group III nitride semiconductor is deteriorated. In addition, when the film formation temperature is high, group V atoms with imperfect bonding may re-evaporate on the crystal surface of the group III nitride semiconductor. Also in this case, there is a possibility that a defect portion having no group V atom occurs in the crystal lattice.

  Therefore, in order to suppress the lattice defect of the group V atoms while reducing the V / III ratio, a method of alternately supplying the group III material and the group V material can be considered. In this method, the first period in which the supply of the Group V material is stopped or reduced and the supply of the Group III material is excessive, and the supply of the Group III material is stopped or reduced, and the supply of the Group V material is performed. And the second period of supplying excessively alternately. Thereby, the excessive supply state of the group III raw material and the excessive supply state of the group V raw material are alternately executed in time. In the first period, since a large amount of group III atoms are supplied, the group III atoms can migrate greatly. On the other hand, since a large amount of group V atoms are supplied thereafter in the second period, group III atoms and group V atoms are bonded to each other, so that loss of group V atoms can be suppressed. Thus, by repeating the first period and the second period alternately, the group V atom lattice deficiency can be suppressed while the group III atom migration is activated.

  For example, in the first period, a Group III source material having a group III atomic weight or more contained in one atomic layer of a III-V group crystal is supplied in an atmosphere containing almost no Group V source material. As a result, the group III atoms stay on the surface of the underlayer with a metallic weak bond and migrate. In the second period, in an atmosphere containing almost no Group III material, the Group V material is supplied in an amount equivalent to the amount of Group III material supplied in the first period to about 100 times that amount. Thereby, the group III atom on the underlayer is combined with the group V atom to form a normal group III-V crystal.

  The ratio between the supply amount of the group III raw material in the first period and the supply amount of the group V raw material in the second period is the ratio of the flow rates (the amount of the group V raw material supplied to the unit area per unit time and the group III The ratio may be controlled by the ratio of the amount of the raw material), or may be controlled by the ratio of the time between the first period and the second period (the ratio of the supply time). Thus, the method of forming a crystal film of a III-V compound semiconductor by alternately supplying a group III material and a group V material is also called a migration enhanced epitaxy method.

  In this embodiment, a migration / enhanced / epitaxy method is applied to the MOCVD apparatus 1 to form a III-V group compound semiconductor crystal film. Hereinafter, a method for forming a group III-V compound semiconductor according to the present embodiment will be described.

  FIG. 4 is a flowchart showing an example of a film forming method according to the first embodiment. First, the substrate W is transferred into the chamber 10, and the substrate W is placed on the stage 20 (S10). Next, the heater 50 heats the stage 20 and the substrate W, and the stage 20 rotates the substrate W (S20). The substrate W is heated to about 1000 ° C. or less (for example, about 800 ° C. to about 1000 ° C.).

(First period)
Next, the first supply unit 30 periodically supplies the group III element-containing gas to the substrate W in synchronization with the rotation period of the substrate W (S30). The first supply unit 30 supplies the group III element-containing gas over the radius of the substrate W from the center to the end of the substrate W. Therefore, in order to share the group III element-containing gas over the entire surface of the substrate W, the first supply unit 30 supplies the group III element-containing gas during a predetermined first period. Thereby, the group III element-containing gas is thermally decomposed on the substrate W, and the group III element adheres to the surface of the substrate W. For example, trimethyl gallium (Ga (CH ₃ ) ₃ ) is used as the group III element-containing gas.

For example, the first supply unit 30 has a surface density j1 (atoms / cm ² ) per unit time in a fan-shaped region (hereinafter also referred to as “θ region”) having a central angle θ (rad) in the circular silicon substrate W with III. It is assumed that a group raw material (group III element-containing gas) is supplied. That is, the supply rate of the group III raw material is j1 (atoms / cm ² · s). θ may be any of θa, θb, or θc.

  In the silicon substrate W, a region other than the θ region (a sector region having a central angle of 2π−θ) is hereinafter also referred to as “(2π−θ) region”. The θ region is a region where the first supply unit 30 is disposed above the substrate W, and the (2π−θ) region is the region where the first supply unit 30 is not present above the substrate W and the second supply unit 40 is disposed. This is the area that has been The second supply unit 40 continuously supplies the Group V material, but in the θ region, the Group III material is supplied in a larger amount than the Group V material (Group V element-containing gas). It may be considered that V group raw material is not supplied. On the other hand, since the first supply unit 30 is not provided above the (2π−θ) region, it may be considered that the group V material is supplied and the group III material is not supplied. That is, in the first period, the first supply unit 30 may supply the group III material in the θ region, and the group V material may be negligibly small and hardly supplied. On the other hand, in the (2π−θ) region, the second supply unit 40 supplies the group V raw material, and the group III raw material is negligibly small.

  Further, since the substrate W rotates with respect to the first and second supply units 30 and 40, when the first supply unit 30 supplies the group III material, the group W material has the substrate W in the θ region. It is supplied every time it passes and is supplied to the entire surface of the substrate W. On the other hand, since θ << (2π−θ), it may be considered that the group V material is supplied to the entire surface of the substrate W when the first supply unit 30 does not supply the group III material. That is, in the first period, the group III material is supplied to the entire surface of the substrate W, and in the second period described later, the group V material is supplied to the entire surface of the substrate W.

  When the surface density j0 of group III atoms (for example, gallium atoms) in the (0001) plane of the group III-V crystal (for example, gallium nitride) is supplied from the first supply unit 30 when the substrate W is stopped. It is assumed that the surface density j1 of the group III atoms is in a relationship of j1 = α · j0. In this case, when α = 1, the surface density j1 of the group III material supplied to the surface of the substrate W per unit time becomes equal to the surface density j0 of the group III atom in the group III-V crystal (j1 = j0). . Therefore, when α = 1, the amount of Group III raw material corresponding to the amount of Group III atoms contained in one atomic layer of the Group III-V crystal is supplied per unit time. On the other hand, when α <1, it indicates that the supply amount of the group III raw material per unit time is less than the amount of group III atoms contained in one atomic layer of the group III-V crystal. When α> 1, it indicates that the supply amount of group III raw material per unit time is larger than the amount of group III atoms contained in one atomic layer of the group III-V crystal (excess supply).

When the substrate W rotates at the rotational speed ω (rad / s), the time for the substrate W to pass through the θ region of the first supply unit 30 is θ / ω (s). Therefore, every time the substrate W makes one rotation (every time the first supply unit 30 passes once over the θ region), the first supply unit 30 supplies the group III raw material to (α · θ / ω) · j0. It supplies with the surface density of (atoms / cm < ² >).

Here, the first period is assumed to be n1 · 2π / ω (s). n1 is the number of rotations of the substrate W during the first period. In this case, the surface density j1 of the group III material supplied to the substrate W during the first period is n1 · (α · θ / ω) · j0 (atoms / cm ² ). Therefore, when n1 · (α · θ / ω) is larger than 1, the supply amount of the group III raw material is larger than the amount of group III atoms contained in one atomic layer in the group III-V crystal, resulting in excessive supply. . That is, the surface density j1 of the supplied group III raw material exceeds j0 (atoms / cm ² ). When n1 · (α · θ / ω) is equal to 1, the supply amount of the group III raw material is equal to the amount of group III atoms contained in one atomic layer in the group III-V crystal. That is, the surface density of the supplied group III raw material becomes equal to j0. Further, when n1 · (α · θ / ω) is smaller than 1, the supply amount of the group III raw material is smaller than the amount of group III atoms contained in one atomic layer in the group III-V crystal. That is, the surface density of the supplied group III raw material is smaller than j0. In the present embodiment, by setting n1 · (α · θ / ω) ≧ 1 in the first period, the group III material supply is excessively supplied to activate group III atom migration on the surface of the substrate W.

(Second period)
The first supply unit 30 stops supplying the group III raw material, and the second supply unit 40 continues to supply radicals or ions of the group V element-containing gas toward the substrate W in the chamber 10 (S40). As a result, radicals or ions of the group V element-containing gas are supplied onto the substrate W and combined with the group III element attached to the surface of the substrate W. As a result, a crystal of the III-V compound is formed on the surface of the substrate W. For example, when nitrogen (N ₂ ) and hydrogen (H ₂ ) are supplied to the second supply unit 40 as the group V element-containing gas, the second supply unit 40 converts the nitrogen and hydrogen gas into plasma and generates nitrogen radicals (N ^* ), Nitrogen ions (N ⁺ ), hydrogen radicals (N ^* ), hydrogen ions (N ⁺ ), hydrogen nitride radicals (NH ^* ), and hydrogen nitride ions (NH ⁺ ) are generated and supplied to the substrate W. . Thereby, a crystal of gallium nitride (GaN) is formed on the surface of the substrate W.

For example, it is assumed that the second supply unit 40 supplies the group V raw material to the (2π−θ) region of the substrate W at a surface density j2 (atoms / cm ² ) per unit time. That is, the supply rate of the group V raw material is j2 (atoms / cm ² · s). At this time, when the surface density j0 of group III atoms (for example, gallium atoms) in the (0001) plane of the group III-V crystal (for example, gallium nitride) is assumed, when the substrate W is stopped, the second supply unit 40 Suppose that the surface density j2 of the group V atoms supplied by is in a relationship of 2 = β · j0.

When the substrate W rotates at the rotational speed ω (rad / s), the time for the substrate W to pass through the (2π−θ) region is (2π−θ) / ω (s). Therefore, every time the substrate W rotates once (every time the first supply unit 30 passes once over the (2π−θ) region), the second supply unit 40 changes the group V material (β · (2π −θ) / ω) · j0 (atoms / cm ² ).

Here, the second period is assumed to be n2 · 2π / ω (s). n2 is the number of rotations of the substrate W during the second period. In this case, the surface density j2 of the group V raw material supplied to the substrate W during the second period is n2 · (β · (2π−θ) / ω) · j0 (atoms / cm ² ). Therefore, when n2 · (β · (2π−θ) / ω) is larger than n1 · (α · θ / ω), the supply amount of the group V raw material is larger than the supply amount of the group III raw material, and the excess supply It becomes. When n2 · (β · (2π−θ) / ω) is equal to n1 · (α · θ / ω), the supply amount of the group V raw material becomes equal to the supply amount of the group III raw material. Further, when n2 · (β · (2π−θ) / ω) is smaller than n1 · (α · θ / ω), the supply amount of the group V raw material is smaller than the supply amount of the group III raw material.

  In the present embodiment, in the second period, by satisfying n2 · (β · (2π−θ) / ω) ≧ n1 · (α · θ / ω), the V group material is supplied more than the Group III material. Suppresses lattice defects of group V atoms.

  As described above, in the present embodiment, n1 · (α · θ / ω) ≧ 1 is set in the first period, so that the group III material supply is excessively supplied to activate the group III atom migration on the surface of the substrate W. And in the second period, by satisfying n2 · (β · (2π−θ) / ω) ≧ n1 · (α · θ / ω), the V group material is supplied in excess of the Group III material and V Suppresses lattice defects of group atoms. By repeatedly executing the first period and the second period, a group III-V crystal film with good quality can be formed on the substrate W. In this case, the supply amount of the group III element-containing gas can be controlled by the length of the first period. The supply amount of the group V element-containing gas can be controlled by the length of the second period.

  When steps S30 (first period) and S40 (second period) are repeated (NO in S50) and the crystal film of the III-V group compound is formed to a desired film thickness (YES in S50), the apparatus 1 Both the supply of the group III element-containing gas and the group V element-containing gas are stopped (S60). Thereby, a crystal film (for example, a gallium nitride crystal film) of a group III-V compound having a good quality is formed on the surface of the substrate 1 with a desired film thickness.

  For example, FIG. 5A and FIG. 5B are timing diagrams showing the operation of supplying trimethylgallium as a group III element-containing gas and the operation of supplying nitrogen radicals or nitrogen ions as a group V element. The vertical axis in FIG. 5A indicates the supply amount of trimethylgallium, and the vertical axis in FIG. 5B indicates the supply amount of nitrogen radicals or nitrogen ions. The horizontal axis of FIG. 5 (A) and FIG. 5 (B) is time.

  For example, in FIG. 5A, f1_1, f2_1, f3_1... Are the first period, and f1_2, f2_2, f3_2,. The controller 60 rotates the stage 20 together with the substrate W during the first and second periods f1_1 to f3_2. For example, the controller 60 rotates the stage 20 at about 800 rpm. The first supply unit 30 supplies trimethylgallium in the first period f1_1, f2_1, f3_1,..., And stops supplying it in the second period f1_2, f2_2, f3_2,. As shown in FIG. 5B, nitrogen radicals and nitrogen ions are continuously supplied in the first and second periods f1_1 to f3_2. In the second period f1_2, f2_2, f3_2,... During which the supply of trimethylgallium is stopped, it may be considered that nitrogen radicals and nitrogen ions are substantially supplied. As a result, gallium adheres to the entire surface of the substrate W in the first period f1_1, f2_1, f3_1..., And a gallium nitride crystal film is formed on the substrate W in the second period f1_2, f2_2, f3_2. The As described above, the first supply unit 30 repeats the supply and stop of the supply of trimethylgallium for each of the first and second periods, whereby the crystal film of gallium nitride is gradually formed on the substrate W (for example, 1 to 10 atomic layers). One by one).

  Note that the lower the atmospheric pressure in the chamber, the longer the mean free path of the source gas, so that the directivity of the source gas increases and the film thickness of the deposited film tends to vary. However, according to the present embodiment, the first supply unit 30 supplies the group III element-containing gas to the entire surface of the substrate W substantially evenly, and the group III element adheres to the surface of the substrate W approximately evenly. As a result, the apparatus 1 forms a flat III-V compound crystal film having a substantially equal film thickness on the substrate W even in a low-pressure (eg, about 100 Pa or less) atmosphere with a high degree of vacuum. Can do.

  Further, according to the present embodiment, the first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center to the end of the substrate W. Supply. Thereby, a group III atom can be made to adhere to the surface of substrate W substantially equally. Furthermore, radicals or ions of group V elements generated by the plasma are supplied from the second supply unit 40 and combined with group III atoms attached to the surface of the substrate W. Thereby, a crystal film of a group III-V compound having a substantially uniform film thickness and good film quality can be formed on the substrate W.

  For example, when a III-V group compound crystal film is formed on the substrate W by thermally decomposing both the group III element-containing gas and the group V element-containing gas on the substrate W, the substrate W has a temperature of about 1000 ° C. It needs to be heated at a high temperature of ~ 1100 degrees. In this case, distortion, cracks, cracks, and the like of the substrate W occur when the substrate W is cooled due to a difference in thermal stress between the substrate W (for example, a silicon substrate) and the crystal film of the III-V group compound.

  On the other hand, in this embodiment, the group III element-containing gas is thermally decomposed in the vicinity of the surface of the substrate W, but the group V element-containing gas is decomposed by plasma in the second supply unit 40. Thereby, the temperature of the substrate W can be relatively low (for example, about 800 ° C. to about 1000 ° C.). Thereby, the thermal stress difference between the substrate W and the crystal film of the III-V group compound can be relaxed, and distortion, cracks, cracks, and the like of the substrate W can be suppressed.

  Further, when the group V element-containing gas is decomposed by plasma and the group III element-containing gas is thermally decomposed in the vicinity of the surface of the substrate W, the first supply unit 30 is disposed closer to the substrate W than the second supply unit 40. It is preferred that Thereby, the first supply unit 30 can supply the group III element-containing gas in the vicinity of the substrate W. However, if the first supply unit 30 is a shower head having a large area, as described above, it becomes an obstacle to the radicals and ions of the group V element-containing gas, and the radicals and ions of the group V element-containing gas remain on the substrate W in an active state. It becomes difficult to reach. On the other hand, if the first supply unit 30 is simply formed in a nozzle shape, it is difficult to uniformly attach the group III atoms to the surface of the substrate W. In this case, it becomes difficult to form the crystal film of the III-V group compound on the substrate W with a uniform film thickness.

  On the other hand, in the present embodiment, the first supply unit 30 is an elongated nozzle that extends from the center to the end of the substrate W over the radius of the substrate W. The first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W. Thereby, the group III element-containing gas is supplied substantially evenly over the entire surface of the substrate W, and the group III element can adhere to the surface of the substrate W substantially evenly. As a result, the apparatus 1 can form a crystal film of a III-V group compound with little distortion and a substantially uniform film thickness and film quality on the substrate W.

(Modification 1)
In the first embodiment, a first period for supplying a group III raw material and a second period for stopping the supply of the group III raw material are set while continuously supplying the group V raw material. The group III-V crystal film is formed on the substrate W by repeating the period.

  In the first modification, the first and second supply units 30 and 40 continuously supply the group III material and the group V material, respectively. On the other hand, by setting the rotation speed ω of the substrate W, or by setting the supply amount (supply rate) of the group III material and the group V material from the first and second supply units 30 and 40, III− A group V crystal film is formed on the substrate W.

For example, the supply rate of the group III material is j1 (atoms / cm ² · s), and the surface density of group III atoms (for example, gallium atoms) in the (0001) plane of the group III-V crystal (for example, gallium nitride) is As j0, it is assumed that j1 has a relationship of j1 = α · j0 with respect to j0.

In addition, it is assumed that the second supply unit 40 supplies the group V raw material to the (2π−θ) region at a surface density j2 (atoms / cm ² ) per unit time. That is, the supply rate of the group V raw material is j2 (atoms / cm ² · s). At this time, j2 is assumed to have a relationship of j2 = β · j0 with respect to j0.

  In the θ region, Group III materials are supplied, but Group V materials are scarcely supplied. In the (2π−θ) region, Group V materials are supplied, but Group III materials are scarcely supplied. Like that.

When the substrate W rotates at the rotational speed ω (rad / s), the time for the substrate W to pass through the θ region of the first supply unit 30 is θ / ω (s). Therefore, every time the substrate W makes one rotation (every time the first supply unit 30 passes once over the θ region), the first supply unit 30 supplies the group III raw material to (α · θ / ω) · j0. It supplies with the surface density of (atoms / cm < ² >). In the case of α · θ / ω ≧ 1, an amount of the Group III material in excess of the amount of Group III atoms contained in one atomic layer of the Group III-V crystal is supplied to the θ region. Thereby, group III atoms can migrate on the surface of the substrate W.

Further, the time for the substrate W to pass through the (2π−θ) region is (2π−θ) / ω. Therefore, every time the substrate W rotates once (every time the first supply unit 30 passes once over the (2π−θ) region), the second supply unit 40 changes the group V material (β · (2π −θ) / ω) · j0 (atoms / cm ² ). Here, when β · (2π−θ) / ω ≧ α · θ / ω, the V group raw material is supplied in excess of the supply amount of the Group III raw material. Thereby, the lattice defect | deletion of a V group atom can be suppressed.

  That is, if the rotation speed ω of the substrate W is set so as to satisfy α · θ / ω ≧ 1 and β · (2π−θ) / ω ≧ α · θ / ω, or the first and second supply If the supply amount (supply rate) of the group III raw material and the group V raw material from the parts 30 and 40 is set, the state in which the group III atom migration is active on the surface of the substrate W and the state in which the lattice defect of the group V atom is suppressed Can be repeated for each rotation of the substrate W. As a result, a group III-V crystal film with good quality can be formed on the substrate W.

  In addition, in the apparatus 1 shown in FIG. 1, the V group raw material from the 2nd supply part 40 mixes with the III group raw material from the 1st supply part 30, and the supply amount of the V group raw material in the (theta) area | region cannot be ignored. is there. In this case, the surface density per unit time of the group III material supplied to the θ region may be j1-j2 instead of j1. On the contrary, there are cases where the Group III raw material is mixed in the (2π−θ) region, and the supply amount of the Group III raw material cannot be ignored. In this case, the area density per unit time of the group V raw material supplied to the (2π−θ) region may be j2−j1 instead of j2.

(Second Embodiment)
FIG. 6 is a schematic diagram showing an example of the configuration of the MOCVD apparatus 2 according to the second embodiment. In the second embodiment, the first supply unit 30 is a nozzle that extends from one end of the substrate W through the center to the other end of the substrate W over the diameter of the substrate W. Other configurations of the second embodiment may be the same as the corresponding configurations of the first embodiment.

  FIG. 7A to FIG. 7C are diagrams illustrating an example of the configuration of the first supply unit 30 according to the second embodiment. The first supply unit 30 is an elongated hollow nozzle similar to that of the first embodiment. FIG. 7A to FIG. 7C show the first supply unit 30 viewed from the substrate W side, and show a configuration example of holes provided in the bottom of the first supply unit 30. The first supply unit 30 has a plurality of holes H between a first end E10 located above one end of the substrate W and a second end E20 located above the other end of the substrate W.

  The hole H is provided between the first end E10 and the second end E20 almost symmetrically with the center C10 (the center of the substrate W) as a boundary. The configuration of the hole H from the central portion C10 to the first end portion E10 and the configuration of the hole H from the central portion C10 to the second end portion E20 are from the central side portion C of the first supply portion 30 of the first embodiment. The configuration of the hole H up to the edge side portion E1 may be the same.

  Accordingly, in FIG. 7A, the opening area of the hole H is relatively small at the central portion C10 of the first supply unit 30, and gradually increases as it approaches the first and second end portions E10 and E20. That is, the hole H has a size (opening area) substantially proportional to the distance from the central portion C10 from the first end E10 to the second end E20 of the first supply unit 30. Thereby, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the central portion from one end of the substrate W to the other end of the substrate W. .

  In FIG. 7B, the opening areas of the plurality of holes H are substantially equal to each other, but the number of the holes H is between the first and second ends E10, E20 of the first supply unit 30 and the central part C10. Different in. That is, in FIG. 7B, the number of holes H is relatively small in the central portion C10, and gradually increases as it approaches the first and second end portions E10, E20 of the first supply portion 30. That is, the number of holes H is provided from the center part to the end part of the substrate W in a number substantially proportional to the distance from the center part. As a result, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W.

  7C, the number of holes H differs between the first and second end portions E10, E20 of the first supply unit 30 and the central portion C10, as in FIG. 7B. However, in FIG. 7C, the opening area of the hole H is smaller than that of the hole H of FIG. 7B, and the number of holes H is the first and second ends E10 and E20, the center C10, Continuously changing between. Therefore, when expressed in terms of the density of the holes H, the density of the holes H is relatively small at the central portion C10 of the first supply unit 30, and gradually increases as it approaches the first and second end portions E10 and E20. That is, the density of the holes H increases substantially in proportion to the distance from the central portion from one end portion to the other end portion of the substrate W. As a result, the first supply unit 30 can supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center of the substrate W to the end of the substrate W.

  The configuration of the first supply unit 30 may be any of FIGS. 7 (A) to 7 (C). If the group III element-containing gas can be supplied to the substrate W at a flow rate substantially proportional to the distance from the central portion from one end portion to the other end portion of the substrate W, the configuration of the hole H of the first supply portion 30 is configured. May be arbitrary.

  FIG. 8 is a graph showing the supply amount of the group III element-containing gas in the first supply unit 30. The first supply unit 30 supplies the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center C10 between the first end E10 and the second end E20.

  The operation of the MOCVD apparatus 2 according to the second embodiment is basically the same as that of the apparatus 1 according to the first embodiment. However, in the second embodiment, since the first supply unit 30 supplies the group III element-containing gas over the diameter of the substrate W, the cycle of supplying the group III element-containing gas to the substrate W is the first embodiment. Of half.

  For example, FIGS. 9A and 9B are graphs showing the supply amount of trimethylgallium as a group III element-containing gas and the supply amount of nitrogen radicals or nitrogen ions as a group V element. The first supply unit 30 sets the first period for supplying trimethylgallium to half that of the first embodiment.

  For example, in FIG. 9A, f11_1, f12_1,... Are the first period, and f11_2, f12_2 are the second period. The stage 20 rotates the substrate W in the first and second periods f11_1 to f12_2. The first supply unit 30 supplies trimethylgallium in the first periods f11_1, f12_1,..., And stops the supply in the second periods f11_2, f12_2,. As shown in FIG. 9B, nitrogen radicals and nitrogen ions are continuously supplied in the first and second periods f11_1 to f12_2. In the second period f1_2, f2_2, f3_2,... During which the supply of trimethylgallium is stopped, it may be considered that nitrogen radicals and nitrogen ions are substantially supplied. Thereby, gallium adheres to the entire surface of the substrate W in the first periods f11_1, f12_1,..., And a gallium nitride crystal film is formed on the substrate W in the second periods f11_2, f12_2. Thus, the 1st supply part 30 repeatedly performs supply and a supply stop of trimethylgallium for every 1st and 2nd period. In the second embodiment, since the first supply unit 30 is provided over the diameter of the substrate W, the first and second periods may be half of those in the first embodiment. In the second embodiment, a crystal film of a group III-V compound can be formed on the substrate W as in the first embodiment, and the same effect as in the first embodiment can be obtained.

  The second embodiment may combine the first modification. In this case, the first and second supply units 30 and 40 may continuously supply the group III element-containing gas and the group V element-containing gas, respectively, and set the rotation speed ω of the substrate W appropriately.

  In the above embodiment, the first supply unit 30 has a plurality of holes H in one nozzle, and supplies the group III element-containing gas to the entire surface of the substrate W substantially evenly. However, the first supply unit 30 may supply the group III element-containing gas to the surface of the substrate W with a plurality of nozzles as described below.

(Modification 2 of the first embodiment)
For example, FIG. 10 is a diagram illustrating the first supply unit 30 according to the second modification of the first embodiment. The first supply unit 30 includes a plurality of nozzles 30_1 to 30_5. The nozzles 30 </ b> _ <b> 1 to 30 </ b> _ <b> 5 are arranged along the radius of the substrate W from the center to the end of the substrate W, and supply the group III element-containing gas to the substrate W in synchronization with the rotation period of the substrate W, respectively. Each of the nozzles 30_1 to 30_5 is open at the tip, and as indicated by an arrow, the group III element-containing gas is discharged from the tip. Nozzle 30_1-30_5 should just supply group III element containing gas according to the supply amount shown in FIG. Accordingly, the nozzles 30_1 to 30_5 supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center Cw of the substrate W. Other configurations of the second modification may be the same as those of the first embodiment.

  The flow rate of the group III element-containing gas supplied from the nozzles 30_1 to 30_5 may be adjusted by changing the size (area) of the openings of the nozzles 30_1 to 30_5 and / or the thickness of the nozzles 30_1 to 30_5. Good. Alternatively, the flow rate of the group III element-containing gas may be adjusted by making the configurations of the nozzles 30_1 to 30_5 the same, and changing the pressure of the group III element-containing gas in each of the nozzles 30_1 to 30_5.

  Further, in FIG. 10, the nozzles 30 </ b> _ <b> 1 to 30 </ b> _ <b> 5 are arranged along the radius of the substrate W from the center portion to the end portion of the substrate W. However, the nozzle 30_2 may supply the group III element-containing gas to an arbitrary position on the circumference C2. The nozzle 30_3 may be provided corresponding to an arbitrary position on the circumference C3. The nozzle 30_4 may be provided corresponding to an arbitrary position on the circumference C4. The nozzle 30_5 may be provided corresponding to an arbitrary position on the circumference C5. That is, the nozzles 30_2 to 30_5 do not necessarily need to be arranged linearly along the radius of the substrate W as long as the group III element-containing gas is supplied to arbitrary positions along the circumferences C2 to C5. Since the substrate W rotates about the central portion Cw, if the nozzles 30_2 to 30_5 supply the group III element-containing gas at any position on the circumference C2 to C5, the supply as shown in FIG. 3 results. The group III element-containing gas can be supplied in an amount. The operation of the second modification may be the same as that of the first embodiment. Therefore, this modification 2 can obtain the same effect as that of the first embodiment.

(Modification 2 of the second embodiment)
For example, FIG. 11 is a diagram illustrating the first supply unit 30 according to the second modification of the second embodiment. The first supply unit 30 includes a plurality of nozzles 30_1 to 30_9. The nozzles 30_1 to 30_9 are arranged along the diameter of the substrate W from one end portion to the other end portion of the substrate W, and supply a group III element-containing gas to the substrate W in synchronization with the rotation period of the substrate W, respectively. The first supply unit 30 may supply the group III element-containing gas according to the supply amount shown in FIG. Accordingly, the nozzles 30_1 to 30_9 supply the group III element-containing gas to the substrate W at a flow rate substantially proportional to the distance from the center Cw of the substrate W. Other configurations of the second modification may be the same as those of the second embodiment.

  The flow rate of the group III element-containing gas supplied from the nozzles 30_1 to 30_9 may be adjusted by changing the size (area) of the openings of the nozzles 30_1 to 30_9 and / or the thickness of the nozzles 30_1 to 30_9. Good. Alternatively, the flow rate of the group III element-containing gas may be adjusted by making the configurations of the nozzles 30_1 to 30_9 the same and changing the pressure of the group III element-containing gas in each of the nozzles 30_1 to 30_9.

  Further, in FIG. 11, the nozzles 30 </ b> _ <b> 1 to 30 </ b> _ <b> 9 are arranged along the diameter of the substrate W from one end of the substrate W to the other end. However, the nozzles 30_2 to 30_5 do not necessarily need to be arranged linearly along the radius of the substrate W as long as the group III element-containing gas is supplied to arbitrary positions along the circumferences C2 to C5. The nozzles 30_6 to 30_9 need not necessarily be arranged linearly along the radius of the substrate W as long as the group III element-containing gas is supplied to arbitrary positions along the circumferences C2 to C5. The operation of the second modification may be the same as the operation of the second embodiment. Therefore, this modification 2 can obtain the same effect as that of the second embodiment.

  The above embodiment can be applied not only to MOCVD but also to MBE (Molecular Beam Epitaxy) with a high degree of vacuum.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 ... MOCVD apparatus, 10 ... Chamber, 20 ... Stage, 30 ... 1st supply part, 40 ... 2nd supply part, 50 ... Heater, 55 ... Drive part, 60 ... Controller, W ... Board

Claims (10)

A stage on which a substrate can be mounted; a first supply unit that supplies a Group III element-containing gas onto the substrate; and a second supply unit that supplies radicals or ions of a Group V element-containing gas onto the substrate. A method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus,
Rotating the substrate on the stage;
The first supply unit periodically supplies the group III element-containing gas to the substrate, or supplies the group III element-containing gas in a supply amount based on a rotation period of the substrate,
A method of manufacturing a semiconductor device, wherein the second supply unit supplies radicals or ions of a group V element-containing gas to the substrate.   The said 1st supply part supplies the said group III element containing gas to this board | substrate with the flow volume substantially proportional to the distance from this center part from the center part of the said board | substrate to the edge part of the said board | substrate. A method for manufacturing a semiconductor device. The first supply unit repeatedly executes supply and stop of the group III element-containing gas,
The method of manufacturing a semiconductor device according to claim 1, wherein the second supply unit continuously supplies the group V element-containing gas.   The said 1st supply part supplies the said group III element containing gas to this board | substrate with the flow volume substantially proportional to the distance from this center part from the one end part of the said board | substrate to the other end part of the said board | substrate. Semiconductor device manufacturing method. The first supply unit supplies the group III atom with a surface density equal to or higher than the surface density of the group III atom of the group III-V crystal,
5. The semiconductor according to claim 1, wherein the second supply unit supplies group V atoms at a surface density equal to or higher than a surface density of group III atoms supplied from the first supply unit. 6. Device manufacturing method. The first supply unit supplies the group III element-containing gas to a region having a central angle θ on the surface of the substrate,
The second supply unit supplies the group V element-containing gas to a region having a central angle (2π−θ) on the surface of the substrate,
In the first period, the first supply unit supplies the group III element-containing gas so as to satisfy n1 · (α · θ / ω) j0 ≧ j0,
In the second period, the second supply unit supplies the group V element-containing gas so as to satisfy n2 · (β · (2π−θ) / ω) j0 ≧ n1 · (α · θ / ω) j0. ,
j0 is the area density of group III atoms of the III-V group crystal, ω is the rotation speed of the substrate, n1 is the rotation speed of the substrate in the first period, and n2 is the rotation speed of the substrate in the second period. The rotation speed of the substrate, where α is j1 / j0 when the surface density of the group III atoms supplied from the first supply unit is j1, and the surface density of the group V atoms supplied from the second supply unit The semiconductor device manufacturing method according to claim 1, wherein β is j2 / j0, where j2 is j2. The first supply unit supplies the group III element-containing gas to a region having a central angle θ on the surface of the substrate,
The second supply unit supplies the group V element-containing gas to a region having a central angle (2π−θ) on the surface of the substrate,
The first supply unit supplies the group III element-containing gas so as to satisfy (α · θ / ω) j0 ≧ j0 every time the substrate rotates once,
The second supply unit supplies the group V element-containing gas so as to satisfy (β · (2π−θ) / ω) j0 ≧ n1 · (α · θ / ω) j0 every time the substrate rotates once. Supply,
j0 is the surface density of group III atoms of the III-V crystal, ω is the rotational speed of the substrate, and when the surface density of group III atoms supplied from the first supply unit is j1, α is j1. 6 is a semiconductor device according to claim 1, wherein β is j2 / j0, where j2 is a surface density of group V atoms supplied from the second supply unit. Manufacturing method. A stage on which a substrate can be mounted;
A first supply unit having a plurality of holes for supplying a group III element-containing gas on the substrate, wherein an opening area of the holes, the number of the holes, or a density of the holes corresponds to a central part of the substrate. A first supply section that is larger or larger in a portion corresponding to an end portion of the substrate than a portion to be
And a second supply unit for supplying radicals or ions of the group V element-containing gas onto the substrate.   The semiconductor according to claim 8, wherein the opening area of the holes, the number of the holes, or the density of the holes is increased or increased substantially in proportion to a distance from a portion corresponding to a central portion of the substrate. manufacturing device.   10. The semiconductor manufacturing apparatus according to claim 8, wherein the first supply unit supplies the group III element-containing gas at a flow rate substantially proportional to a distance from a portion corresponding to a central portion of the substrate.

Images