JP2017138218A - Semiconductor laser light source device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a new technique with which it is possible to realize three-dimensional Particle Image Velocimetry (PIV) that measures a fluid three-dimensionally.SOLUTION: A semiconductor laser light source of the present invention includes: a light source unit including a plurality of emitters; and a lens for converting each laser beam emitted from the plurality of emitters into a laser sheet spreading in a first direction and progressing, with a prescribed width, in a second direction orthogonal to the first direction. The lens includes, for each of the plurality of emitters, a plurality of lens regions for converting the laser beam emitted from each of the emitters into the laser sheet. The incident positions of the laser beams in the lens regions emitted from at least two emitters among the plurality of emitters are different from each other in the second direction.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a semiconductor laser light source device.

  Conventionally, a technique called PIV (Particle Image Velocimetry) is known as a method for measuring the flow and velocity of a fluid. PIV is a technology that visualizes and measures the flow of fluid by mixing fine particles called tracer particles in a fluid and photographing the scattered light obtained by irradiating the tracer particles with a sheet of laser light. is there.

  For example, in Patent Document 1 and Patent Document 2, a three-dimensional space mixed with tracer particles is irradiated with a sheet of laser light, a plurality of images are taken at minute time intervals, and the obtained images are analyzed. The calculation of two components of fluid velocity is described. Thus, PIV for measuring fluid in two dimensions is known.

  By the way, in order to measure the fluid flow more accurately, there is a demand for calculating three components of the fluid velocity. Therefore, PIV for measuring fluid in three dimensions has been studied. In the following, a PIV that measures a fluid three-dimensionally may be referred to as a “three-dimensional PIV”.

  For example, in Patent Document 3, tracer particles irradiated with sheet-like laser light are photographed from different directions using a plurality of cameras, and the three components of fluid velocity are calculated by analyzing the obtained images. It is described to do.

  Non-Patent Document 1 describes that sheet-shaped laser light is spatially scanned by being incident on a rotating mirror.

JP 2007-085784 A JP 2010-117190 A JP 2004-286733 A

Visualization Society of Japan, “PIV Handbook”, Morikita Publishing Co., Ltd., issued July 20, 2002, p. 24

  However, the conventional three-dimensional PIV has the following problems.

  For example, in the technique of Patent Document 3, it is necessary to prepare a plurality of imaging devices such as a CCD camera. In order to reduce the cost and size of the measurement system based on PIV, it is desirable to reduce the number of imaging devices relatively.

  In the technique of Non-Patent Document 1, a sheet-like laser beam is scanned by a rotating mirror. Therefore, when a failure such as a failure occurs in the mechanism that moves the mirror, the sheet-like laser beam cannot be scanned. That is, the technique of Non-Patent Document 1 is greatly affected by the movable mechanism of the mirror, and there is a problem that the measurement system using PIV is not reliable.

  Therefore, the conventional three-dimensional PIV cannot satisfy the user's request, and a new technique capable of realizing the three-dimensional PIV has been demanded.

  An object of this invention is to provide the novel technique which can implement | achieve the three-dimensional PIV which measures a fluid three-dimensionally.

The semiconductor laser light source device of the present invention is
A light source unit including a plurality of emitters;
A lens that converts each laser beam emitted from the plurality of emitters into a laser sheet that spreads in a first direction and travels with a predetermined width in a second direction orthogonal to the first direction. And having
The lens includes, for each of the plurality of emitters, a plurality of lens regions that convert the laser light emitted from the emitters into the laser sheet,
In the laser beams emitted from at least two of the plurality of emitters, incident positions of the laser beams in the lens region are different from each other in the second direction.

  According to the above configuration, laser beams emitted from at least two of the plurality of emitters are incident on the corresponding lens regions from different positions in the second direction. Thus, when the laser light emitted from at least two emitters is converted into a laser sheet by the lens region, it proceeds at a predetermined angle without traveling in the same direction. As a result, a plurality of laser sheets traveling in different directions can be formed, and a three-dimensional PIV can be realized.

In the above configuration,
A control unit that controls the light source unit so that some of the emitters emit the laser light and other emitters other than some of the emitters do not emit the laser light; Have
In the laser light emitted from some of the emitters and the laser light emitted from other emitters other than some of the emitters, the incident position of the laser light in the lens region is the second The directions may be different from each other.

  According to the said structure, it becomes possible to light a some emitter separately. In addition, laser sheets that travel at a predetermined angle without traveling in the same direction are individually formed. Thereby, a three-dimensional PIV can be realized.

In the above configuration,
The controller is
A lighting emitter determining unit that determines a specific emitter that emits the laser light from a plurality of the emitters;
A current supply unit that supplies current to the specific emitter determined by the lighting emitter determination unit and does not supply current to the other emitters other than the specific emitter may be included.

  According to the said structure, it can implement | achieve lighting a some emitter separately by the lighting emitter determination part and an electric current supply part.

In the above configuration,
The controller is
An imaging device that captures an object irradiated by the laser sheet from the second direction further includes a synchronization signal receiving unit that receives a synchronization signal for starting exposure;
The lighting emitter determining unit is
Determining the specific emitter that emits the laser light from the plurality of emitters when receiving the synchronization signal;
When the synchronization signal is not received, the specific emitter that emits the laser light may not be determined.

  According to the above configuration, it is possible to synchronize the two processes of exposure of the photographing apparatus and lighting of the emitter with the synchronization signal. As a result, the photographing apparatus can perform exposure when the emitter is lit.

In the above configuration,
The plurality of emitters are arranged in the first direction,
The laser beam travels in the first direction and the second direction,
In at least two of the plurality of emitters and two lens regions corresponding to the two emitters, when the positions of the emitters in the second direction are used as a reference, the emitters The positions in the second direction of the lens regions corresponding to may be different.

  According to the above configuration, in at least two of the plurality of emitters, the relative positional relationship in the second direction between the emitter and the lens region corresponding to the emitter is different. Thus, when the laser light emitted from at least two emitters is converted into a laser sheet by the lens region, it proceeds at a predetermined angle without traveling in the same direction. As a result, a plurality of laser sheets traveling in different directions can be formed, and a three-dimensional PIV can be realized.

In the above configuration,
In at least two of the lens regions of the plurality of lens regions,
The optical axis of one of the lens regions is higher than the emitter corresponding to one of the lens regions when viewed from a third direction orthogonal to both the first direction and the second direction. Is shifted in the direction of
The optical axis of the other lens region may be shifted in the direction opposite to the second direction with respect to the emitter corresponding to the other lens region when viewed from the third direction.

  According to the above configuration, when laser light emitted from at least two emitters is converted into a laser sheet by the lens region, the laser light travels in an opposite direction with respect to the optical axis. As a result, it is possible to irradiate the three-dimensional space in which the fluid to be observed exists over a wide range, and the fluid can be measured over a wide range.

Further, in the above configuration, in the laser light emitted from at least two of the plurality of emitters, the incident position in the lens region of the laser light coincides in the second direction,
The laser beams emitted from at least two of the emitters may be converted into the laser sheets traveling in parallel with each other by the corresponding lens regions.

  According to the above configuration, the laser sheets by at least two of the plurality of emitters travel in parallel with each other. As a result, a plurality of laser sheets can be overlapped to form a single laser sheet, and a reduction in laser output can be suppressed.

In the above configuration,
The optical axes of the plurality of lens regions are arranged in a straight line when viewed from a third direction orthogonal to both the first direction and the second direction,
The lens may be inclined at a predetermined angle from the first direction when viewed from the third direction.

  According to the above configuration, in the laser light emitted from at least two emitters of the plurality of emitters, the laser light is incident on the lens region in different forms in the second direction. This can be realized by inclining by a predetermined angle.

In the above configuration,
The lens is a cylindrical lens;
The light source unit includes a semiconductor laser array in which a plurality of the emitters are arranged in the first direction, the first direction is a slow axis direction, and the second direction is a fast axis direction,
The distance from the emitter located at one end to the emitter located at the other end is d, the focal length of the lens is f, the width of the lens in the second direction is h, and the lens is the When the angle inclined from the first direction is θ and the divergence angle in the second direction of the laser light emitted from the plurality of emitters is φ, the following equation:
(D / 2) tan θ + f · tan (φ / 2) <h / 2
It does not matter as long as

  According to the above configuration, the laser light emitted from each emitter can be more reliably incident on the lens region. Details will be described in a mode for carrying out the invention.

  According to the semiconductor laser light source device of the present invention, three-dimensional PIV for measuring fluid in three dimensions can be realized by a novel method.

It is a schematic diagram for demonstrating the outline | summary of a PIV system. It is a timing chart which shows the timing of the output of a synchronizing signal, exposure of an imaging device, and the injection | emission of a laser sheet. It is a schematic diagram for demonstrating the structure of the semiconductor laser light source device of 1st embodiment. It is a schematic diagram for demonstrating the structure of the semiconductor laser light source device of 1st embodiment. It is a schematic diagram for demonstrating the laser beam inject | emitted from a semiconductor laser array. It is a schematic diagram for demonstrating the semiconductor laser light source device of 1st embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of 1st embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of 1st embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of 1st embodiment. It is a block diagram for demonstrating the control part of the semiconductor laser light source device of 1st embodiment. It is a flowchart of the lighting circuit switching process which the control part of the semiconductor laser light source device of 1st embodiment performs. It is a schematic diagram for demonstrating the semiconductor laser light source device of 2nd embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of 2nd embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of another embodiment. It is a schematic diagram for demonstrating the semiconductor laser light source device of another embodiment.

  The semiconductor laser light source device of the embodiment will be described with reference to the drawings. In each figure, the dimensional ratio in the drawing does not necessarily match the actual dimensional ratio.

(First embodiment)
[Overview of PIV]
The semiconductor laser light source device 1 in the first embodiment will be described. The semiconductor laser light source device 1 is used as a light source for PIV (Particle Image Velocimetry). First, an outline of the PIV system will be described with reference to FIGS.

  FIG. 1 is a schematic diagram showing an outline of a PIV system that measures fluid three-dimensionally. As shown in FIG. 1, the PIV system 100 includes a semiconductor laser light source device 1, a synchronization signal generator 3, a photographing device 5, and an image processing device 7. Hereinafter, the semiconductor laser light source device 1, the synchronization signal generator 3, the imaging device 5, and the image processing device 7 will be described with reference to FIG.

  The semiconductor laser light source device 1 emits a sheet-like laser light LS. Hereinafter, the sheet-like laser light LS is referred to as “laser sheet LS”. As an example, FIG. 1 shows a case where the semiconductor laser light source device 1 emits nine layers of laser sheets LS (1 to 9), but the number of laser sheets LS is not limited thereto.

  The laser sheet LS is light that has a certain width in the x direction and travels while spreading in the y direction. The x direction is a short direction of a semiconductor laser array, which will be described later, and corresponds to a “second direction”. The y direction is a longitudinal direction of a semiconductor laser array, which will be described later, and corresponds to a “first direction”. The z direction is a direction orthogonal to the x direction and the y direction, and corresponds to a “third direction”. In FIG. 1, the illustration of the width in the x direction of each laser sheet LS (1-9) is omitted. As an example, the width of the laser sheet LS in the x direction is 1 to 2 mm. The width of the laser sheet LS in the y direction is 120 to 240 mm in a region at least 1 to 2 m away from the semiconductor laser light source device 1 in the z direction. That is, in this region, the width in the x direction is extremely small compared to the width in the y direction.

  Moreover, each laser sheet LS (1-9) advances in a mutually different direction. For example, the laser sheet LS5 is parallel to the upper surface 11 of the semiconductor laser light source device 1. That is, the laser sheet LS5 is parallel to the yz plane. The laser sheets LS (1 to 4) are inclined at a predetermined angle upward (ie, in the x direction) from the upper surface 11 of the semiconductor laser light source device 1. The laser sheets LS (6 to 9) are inclined at a predetermined angle downward (that is, in the −x direction) from the upper surface 11 of the semiconductor laser light source device 1.

  The semiconductor laser light source device 1 emits the laser sheets LS (1 to 9) one by one in order from the laser sheet LS1. This will be specifically described with reference to FIG. FIG. 2 is a timing chart showing the timing of the output of the synchronization signal S (details will be described later) by the synchronization signal generator 3, the exposure of the photographing apparatus 5, and the ejection of each laser sheet LS (1-9). Although details will be described later, the semiconductor laser light source device 1 and the imaging device 5 receive the synchronization signal S from the synchronization signal generator 3.

  As shown in FIG. 2, when the semiconductor laser light source device 1 receives the synchronization signal S, it first emits the laser sheet LS1 for a time T1 (for example, 10 ms). Note that while the laser sheet LS1 is being emitted, the other laser sheets LS (2 to 9) are not being emitted. When the laser beam LS1 is emitted for the time T1, the semiconductor laser light source device 1 finishes the emission of the laser sheet LS1 and waits for reception of the next synchronization signal S. Subsequently, upon receiving the next synchronization signal S, the semiconductor laser light source device 1 emits the laser sheet LS2. When the semiconductor laser light source device 1 emits the laser sheet LS2 for the time T1, the semiconductor laser light source device 1 ends the emission of the laser sheet LS2 and waits for the reception of the next synchronization signal S. Subsequently, when receiving the next synchronization signal S, the semiconductor laser light source device 1 emits the laser sheet LS3 (not shown). As described above, the semiconductor laser light source device 1 emits the laser sheets LS (1 to 9) one by one in the order of the laser sheets LS1, LS2,. In FIG. 2, only the injection of the laser sheets (LS1, LS2) is shown for convenience. In FIG. 2, the state where the semiconductor laser light source device 1 emits the laser sheet LS is “ON”, and the state where it is not emitted is “OFF”.

  For convenience of explanation, FIG. 1 shows a state in which the semiconductor laser light source device 1 emits a nine-layer laser sheet LS (1-9), but as described above, the semiconductor laser light source device 1 is a laser. The sheets LS (1-9) are ejected one by one.

  The configuration of the semiconductor laser light source device 1 and the control for the semiconductor laser light source device 1 to emit the laser sheets LS (1 to 9) one layer at a time will be described later.

  Returning to FIG. 1, the description will be continued. Tracer particles 9 are mixed in the fluid to be measured. In FIG. 1, although the fluid itself is not shown, a large number of tracer particles 9 are mixed in the predetermined fluid, and the laser sheet LS is irradiated in a state where the fluid is irradiated with the laser sheet LS. Only a part of the tracer particles 9 located in the region irradiated with is shown. The tracer particles 9 are, for example, fine particles made of resin such as polystyrene, fine droplets obtained by atomizing water and oil, plastic fine particles, smoke, and the like. When the laser sheet LS emitted from the semiconductor laser light source device 1 is irradiated onto the tracer particles 9 in the fluid, scattered light is generated.

  The synchronization signal generator 3 generates a synchronization signal S and outputs the synchronization signal S to the semiconductor laser light source device 1 and the imaging device 5. As shown in FIG. 2, the synchronization signal generator 3 outputs the synchronization signal S at a constant time interval T2 (for example, 12 ms). Although details will be described later, the synchronization signal S is a signal for synchronizing the timing at which the semiconductor laser light source device 1 emits each laser sheet LS (1-9) and the timing at which the photographing device 5 performs exposure. is there.

  The photographing device 5 is constituted by a CCD camera as an example. The description of the photographing apparatus 5 will be continued with reference to FIG. Upon receiving a PIV analysis instruction (for example, power-on of the image capturing device 5) from the user, the image capturing device 5 stands by until the synchronization signal S is received. When receiving the synchronization signal S, the imaging device 5 counts the time from 0 to T3 (for example, 1 ms). When the photographing apparatus 5 counts up to time T3, exposure starts and exposure is performed for time T4 (for example, 8 ms). When the exposure is performed for the time T4, the photographing device 5 ends the exposure and waits until the next synchronization signal is received. When receiving the next synchronization signal S, the imaging device 5 performs the counting at the time T3 and the exposure at the time T4. As described above, every time the photographing apparatus 5 receives the synchronization signal S, the photographing apparatus 5 performs the count at the time T3 and the exposure at the time T4. In FIG. 2, the state where the photographing apparatus 5 is performing exposure is “ON”, and the state where exposure is not being performed is “OFF”.

  As shown in FIG. 2, the time T1 at which the laser sheet LS is emitted is shorter than the interval T2 at which the synchronization signal is output (that is, T1 <T2). Further, the time (T3 + T4) from when the photographing apparatus 5 receives the synchronization signal S to the end of exposure is shorter than the time T1 when the laser sheet LS is emitted (that is, T3 + T4 <T1 <T2). Therefore, the imaging device 5 captures the scattered light of the tracer particles 9 every time the laser sheet LS (1-9) is emitted. Specifically, the imaging device 5 captures the scattered light of the tracer particles 9 by the laser sheet LS1 as one image, and captures the scattered light of the tracer particles 9 by the laser sheet LS2 as another image. As described above, the imaging device 5 records images as many as the number of laser sheets LS (9 in this embodiment). The photographing device 5 outputs the photographed image to the image processing device 7.

  The image processing device 7 calculates the fluid velocity based on the input image. As described above, the semiconductor laser light source device 1 emits the laser sheets LS (1 to 9) traveling in different directions. Therefore, the image processing device 7 can calculate the three components (x, y, and z components) of the fluid velocity by analyzing the image input from the imaging device 5. In addition, since the calculation method of the velocity of fluid is a known technique, description is abbreviate | omitted in this specification.

[Constitution]
Next, the configuration of the semiconductor laser light source device 1 of the first embodiment will be described with reference to FIG. FIG. 3 is a schematic diagram when the upper surface 11 of the semiconductor laser light source device 1 of FIG. 1 is viewed from above (that is, in the −x direction). FIG. 3 shows a state in which the semiconductor laser light source device 1 emits a laser sheet LS5 that is parallel to the upper surface 11 (that is, parallel to the yz plane).

  As shown in FIG. 3, the semiconductor laser light source device 1 includes a light source unit 13, a cylindrical lens 15, and a control unit 19. The cylindrical lens 15 corresponds to a “lens”.

  Hereinafter, the light source unit 13, the cylindrical lens 15, and the control unit 19 will be described in detail.

[Light source unit 13]
As shown in FIG. 3, the light source unit 13 includes a semiconductor laser array 21, a submount 23, and a heat sink 25. Although not shown in FIG. 3, the light source unit 13 includes solder layers between the semiconductor laser array 21 and the submount 23 and between the submount 23 and the heat sink 25. Hereinafter, the light source unit 13 will be described with reference to FIGS. 4 and 5. FIG. 4 is a schematic view of the light source unit 13 of the semiconductor laser light source device 1 of FIG. 3 when viewed in the left direction on the paper, that is, in the −z direction. In FIG. 4, the outer edge of the cylindrical lens 15 is shown for convenience of explanation.

  The semiconductor laser array 21 is configured by arranging a plurality of edge emitting semiconductor laser elements in an array. The semiconductor laser array 21 includes a side surface 22 that is a surface perpendicular to the z direction (corresponding to the xy plane in the drawing), and emits laser light from the side surface 22.

  The semiconductor laser array 21 includes a plurality of emitters 27 arranged on the side surface 22 in the y direction. In the semiconductor laser array 21 shown in FIG. 4, the y direction, which is the arrangement direction of the emitter 27, corresponds to the longitudinal direction of the semiconductor laser array 21. The emitter 27a is an emitter located at the center of the side surface 22 in the y direction. The emitter 27b is an emitter located at one end of the side surface 22 (ie, the end on the + y direction side) with respect to the y direction, and the emitter 27c is the other end (ie, −y) of the side surface 22 with respect to the y direction. The emitter is located at the end of the direction side. As an example, the semiconductor laser array 21 includes 20 emitters 27 arranged at a pitch of 200 μm. In FIG. 2, nine emitters 27 are shown for convenience.

  Hereinafter, the emitter 27a may be referred to as a “center emitter 27a”, and the emitters 27b and 27c may be referred to as an “end emitter 27b” and an “end emitter 27c”, respectively.

  Each emitter 27 emits a laser beam that travels in both the x and y directions. FIG. 5 shows the laser beam L emitted from the central emitter 27 a of the semiconductor laser array 21. As shown in FIG. 5, the laser light L diverges in both the x direction and the y direction. In addition, the laser light L diverges greatly in the x direction compared to the y direction. That is, the divergence angle in the x direction of the laser light L is larger than the divergence angle in the y direction. That is, the x direction corresponds to the “fast axis direction” and the y direction corresponds to the “slow axis direction”. The laser light emitted from the other emitters 27 travels in the same manner as the laser light L. In FIG. 5, the divergence angle of the laser light L in the x direction is φ.

  Returning to FIG. 4, the description will be continued. The semiconductor laser array 21 is joined to the submount 23 by a solder layer 29. The solder layer 29 is placed on the upper surface of the submount 23. The light source unit 13 may not include the submount 23.

  The temperature of the semiconductor laser array 21 rises as the laser beam is emitted. The submount 23 is made of a material having high thermal conductivity, and conducts heat generated from the semiconductor laser array 21 to the heat sink 25.

  The solder layer 31 is placed on the upper surface of the heat sink 25 and joins the submount 23 and the heat sink 25.

  The heat sink 25 releases the heat conducted from the submount 23 to the outside of the semiconductor laser light source device 1. The heat sink 25 is made of a metal having high thermal conductivity. The light source unit 13 may not include the heat sink 25.

[Cylindrical lens]
As shown in FIG. 4, the cylindrical lens 15 is disposed to be inclined by an angle θ (as an example, 0.1 to 0.5 degrees) from the y direction. The angle θ corresponds to a “predetermined angle”. Hereinafter, the cylindrical lens 15 will be described in detail with reference to FIGS.

  FIG. 6 is a schematic diagram when the cylindrical lens 15 is viewed in the −z direction (see FIG. 3). In FIG. 6, for convenience of explanation, the emitter 27 located behind the cylindrical lens 15 (that is, on the −z direction side) is indicated by a broken line.

  As shown in FIG. 6, the cylindrical lens 15 includes a plurality of lens regions 33. In the present embodiment, the cylindrical lens 15 includes the same number (that is, nine) of lens regions 33 as the emitter 27. Each lens region 33 faces each emitter 27. That is, the laser light emitted from each emitter 27 is incident on the facing lens region 33.

  Each lens region 33 has an optical axis OA parallel to the z direction. The optical axis OA is a straight line connecting the centers of the lens regions 33 and the focal points of the lens regions 33.

  As described above, the cylindrical lens 15 is disposed at an angle θ from the y direction (see FIG. 4). Therefore, the position in the x direction of the emitter 27 is different from the position in the x direction of the optical axis OA of the lens region 33 corresponding to the emitter 27. Specifically, as shown in FIG. 6, the emitter 27 b at the end is greatly displaced in the −x direction from the optical axis OA of the corresponding lens region 33. Further, the emitter 27c at the end is greatly displaced in the x direction from the optical axis OA of the corresponding lens region 33. Further, the emitter 27 located between the central emitter 27a and the emitters (27b, 27c) at the end is slightly shifted from the optical axis OA of the corresponding lens region 33 in the x direction or the −x direction. The central emitter 27a is present at the same position in the x direction as the optical axis OA of the corresponding lens region 33. The lens region 33 corresponding to the emitter 27b at the end corresponds to “one lens region”, and the lens region 33 corresponding to the emitter 27c at the end corresponds to “the other lens region”.

  In this embodiment, the emitters (27b, 27c) at the ends are shifted from the optical axis OA of the corresponding lens region 33 by the same distance H. That is, the emitter 27b at the end is shifted from the optical axis OA of the corresponding lens region 33 by the distance H in the −x direction. Further, the emitter 27c at the end is displaced from the optical axis OA of the corresponding lens region 33 by the distance H in the x direction.

  The lens region 33 converts the laser light L emitted from the facing emitter 27 into a laser sheet LS. Hereinafter, a specific description will be given with reference to FIGS.

  FIG. 7 is a schematic cross-sectional view of the semiconductor laser light source device 1 of FIG. 3 taken along line AA. The AA line is parallel to the z direction and passes through the emitter 27b (see FIG. 4) at the end of the semiconductor laser array 21.

  As shown in FIG. 7, the laser light L spreads in the x direction and travels before entering the lens region 33. As described above, the divergence angle of the laser light L in the x direction is φ (see FIG. 5). The lens region 33 converts the laser light L so as to have a certain width in the x direction. In other words, the lens region 33 suppresses the divergence of the laser light L in the x direction. The lens region 33 holds the divergence of the laser light L in the y direction (see FIGS. 1 and 3). That is, the lens region 33 holds the divergence angle of the laser light L in the y direction. Thus, the lens region 33 converts the laser light L emitted from the opposing emitter 27b into a laser sheet LS1 having a certain width in the x direction and traveling while spreading in the y direction.

  As described above, the emitter 27b at the end exists at a position shifted in the −x direction from the optical axis OA of the corresponding lens region 33 (see FIG. 6). For this reason, the laser sheet LS1 converted from the laser light L emitted from the emitter 27b at the end advances at an angle α with respect to the optical axis OA of the lens region 33. More specifically, the laser sheet LS1 travels in the x direction with respect to the optical axis OA of the lens region 33.

  FIG. 8 is a schematic cross-sectional view of the semiconductor laser light source device 1 of FIG. 3 taken along the line BB. The BB line is parallel to the z direction and passes through the emitter 27c (see FIG. 4) at the end of the semiconductor laser array 21.

  As shown in FIG. 8, the lens region 33 converts the laser light L emitted from the opposing emitter 27c into a laser sheet LS9 having a certain width in the x direction and traveling in the y direction. As described above, the emitter 27c at the end is located at a position shifted in the x direction from the optical axis OA of the corresponding lens region 33 (see FIG. 6). Therefore, the laser sheet LS9 obtained by converting the laser beam L emitted from the emitter 27c at the end portion travels at an angle α with respect to the optical axis OA of the lens region 33. More specifically, the laser sheet LS9 proceeds while being inclined in the −x direction with respect to the optical axis OA of the lens region 33.

  Although not shown, the corresponding lens regions are similarly applied to the laser sheets LS (2 to 4, 6 to 8) by the emitter 27 located between the central emitter 27a and the end emitters (27b and 27c). It advances at a predetermined angle with respect to 33 optical axes OA.

  Note that the emitters (27b, 27c) at the ends are greatly displaced in the −x direction or the x direction from the optical axis OA of the corresponding lens region 33. Therefore, the converted laser sheets (LS1, LS9) travel at a relatively large angle α with respect to the optical axis OA (see FIGS. 7 and 8). On the other hand, the emitter 27 located between the central emitter 27a and the emitters (27b, 27c) at the end is slightly shifted from the optical axis OA of the corresponding lens region 33 in the x direction or the −x direction. Therefore, the converted laser sheets LS (2-4, 6-8) travel at a relatively small angle with respect to the optical axis OA. Thus, as the distance between the position of the emitter 27 and the position of the optical axis OA of the corresponding lens region 33 increases, the laser sheet LS advances with a greater inclination with respect to the optical axis OA.

  The laser sheet LS5 by the central emitter 27a is parallel to the yz plane as described above (see FIG. 3). Although not shown, the laser sheet LS5 by the central emitter 27a is parallel to the optical axis OA of the corresponding lens region 33 when viewed from the y direction.

[Inclination of cylindrical lens]
Next, the inclination of the cylindrical lens 15 will be described with reference to FIG. As described above, the cylindrical lens 15 is disposed at an angle θ from the y direction (see FIG. 4).

  FIG. 9A is a schematic diagram when the cylindrical lens 15 is viewed in the −z direction (see FIG. 3). In FIG. 9A, for convenience of explanation, the emitter 27 located behind the cylindrical lens 15 (that is, on the −z direction side) is indicated by a broken line. FIG. 9B is a schematic cross-sectional view when the cylindrical lens 15 of FIG. 9A is cut along the line CC. The CC line is parallel to the x direction and passes through the emitter 27b (see FIG. 4) at the end of the semiconductor laser array 21. FIG. 9B also shows the emitter 27b at the end, the laser beam L emitted from the emitter 27b, and the laser sheet LS1 after the conversion of the laser beam L for convenience of explanation.

As shown in FIG. 9A, the distance from the end emitter 27b to the end emitter 27c is d, and the width of the cylindrical lens 15 in the x direction is h. Further, as shown in FIG. 9B, the focal length of the cylindrical lens 15 is assumed to be f. Further, as described above, the divergence angle in the x direction of the laser light L is φ. At this time, the angle θ satisfies the following expression.
(D / 2) tan θ + f · tan (φ / 2) <h / 2

  The above formula will be described. The first term “(d / 2) tan θ” on the left side is a distance H between the end emitter 27b and the optical axis OA of the lens region 33 corresponding to the end emitter 27b (FIGS. 6 and 6). 9 (a) and (b)). The second term “f · tan (φ / 2)” on the left side is half the width H ′ of the laser sheet LS1 in the x direction.

  As described above, the emitter 27b at the end is most greatly displaced in the −x direction from the optical axis OA of the corresponding lens region 33 as compared with the other emitters 27. Therefore, a part of the laser light L emitted from the emitter 27 b at the end may not enter the lens region 33. Specifically, laser light that travels most inclined in the −x direction out of the laser light L emitted from the emitter 27 b at the end may not enter the lens region 33.

  On the other hand, in this embodiment, the cylindrical lens 15 is inclined by an angle θ satisfying the above expression. That is, the value of H + (H ′ / 2) is shorter than half the width h of the cylindrical lens 15 in the x direction. Thus, according to the present embodiment, the laser light L emitted from the emitter 27 b is incident on the lens region 33 without protruding from the lens region 33. As a result, it can suppress that the intensity | strength of laser sheet LS1 falls.

  The tilt of the cylindrical lens 15 has been described by taking the end emitter 27b as an example, but the same applies to the end emitter 27c. Specifically, the emitter 27 b at the end is most greatly displaced in the x direction compared to the other emitters 27. For this reason, of the laser light L emitted from the emitter 27 b at the end, the laser light that travels most inclined in the x direction may not enter the lens region 33. On the other hand, in this embodiment, the cylindrical lens 15 is inclined by an angle θ that satisfies the above expression. As a result, the laser light L emitted from the emitter 27 c at the end is all incident on the lens region 33 without protruding from the lens region 33.

As described above, according to the present embodiment, all of the laser light L emitted from the emitters (27b, 27c) at the end is incident on the corresponding lens region 33. Note that all of the laser light L emitted from the emitters 27 other than the end emitters (27b, 27c) also enters the corresponding lens region 33. This is because the other emitter 27 exists at a position slightly deviated from the optical axis OA of the corresponding lens region 33 as compared with the emitters (27b, 27c) at the end.
[Control unit]
Subsequently, the control unit 19 will be described with reference to FIGS. 10 and 11.

  FIG. 10 is a block diagram showing the configuration of the control unit 19. As illustrated in FIG. 10, the control unit 19 includes a synchronization signal reception unit 191, a lighting emitter determination unit 193, and a current supply unit 195.

  The synchronization signal receiver 191 is electrically connected to the synchronization signal generator 3. The synchronization signal receiving unit 191 receives the synchronization signal S from the synchronization signal generator 3.

  When the synchronization signal receiving unit 191 receives the synchronization signal S, the lighting emitter determination unit 193 determines the emitter 27 that emits the laser light L from the plurality of emitters 27 (9 emitters in the present embodiment). To do.

  The current supply unit 195 supplies current to the emitter 27 determined by the lighting emitter determination unit 193. Specifically, the current supply unit 195 includes a switch (not shown) that switches the supply of current to each emitter 27. The switch is in an OFF state in the initial state. The current supply unit 195 supplies current to the emitter 27 by switching a switch for supplying current to the emitter 27 determined by the lighting emitter determination unit 193 from OFF to ON. The current supply unit 195 does not supply current to the other emitters 27 that have not been determined by the lighting emitter determination unit 193. That is, the current supply unit 195 maintains the switch for supplying current to the other emitter 27 in an OFF state.

  The control unit 19 assigns a number to each emitter 27 and manages the emitters 27 so that they can be identified. In the present embodiment, any of the numbers N from 1 to 9 is associated with each of the nine emitters 27. As an example, the control unit 19 associates the numbers N of 1 to 9 in order from the end emitter 27b to the end emitter 27c. That is, N = 1 is associated with the end emitter 27b, N = 5 is associated with the central emitter 27b, and N = 9 is associated with the end emitter 27c.

  Next, processing performed by the control unit 19 will be described with reference to FIG. Hereinafter, a case where the semiconductor laser array 21 includes nine emitters 27 will be described as an example. When the user inputs a PIV measurement instruction (for example, power ON of the semiconductor laser light source device 1) from the user, the control unit 19 starts the lighting circuit switching process shown in FIG.

  First, the lighting emitter determining unit 193 sets the variable N to 1 (S1). Subsequently, the synchronization signal receiving unit 191 determines whether or not the synchronization signal S has been received (S3), and determines that the synchronization signal S is not received (S3: No) until it determines that the synchronization signal S has been received. The process of S3 is repeated.

  When the synchronization signal receiving unit 191 determines that the synchronization signal has been received (S3: Yes), the current supply unit 195 includes the emitter 27 associated with N = 1 (in this embodiment, the emitter 27b at the end). Is supplied with current for a time T1 (S5). Specifically, the current supply unit 195 starts supplying current by switching a switch for supplying current to the emitter 27b at the end from OFF to ON. The current supply unit 195 switches the switch from ON to OFF when the time T1 has elapsed since the start of current supply.

  As described above, the switch for supplying current to each emitter 27 is OFF in the initial state. Therefore, the current supply unit 195 switches the switch for supplying current to the emitter 27b at the end from OFF to ON (S5), so that only the emitter 27b at the end emits the laser light L. As a result, the semiconductor laser light source device 1 emits only the laser sheet LS1.

  When the current supply unit 195 finishes S5, the lighting emitter determination unit 193 increases the value of the variable N by 1 (S7). That is, the value of the variable N is updated from “1” to “2”. Then, the lighting emitter determination unit 193 determines whether or not the value of the variable N updated in S7 is equal to or less than the total number of emitters 27 (9 in this embodiment) (S9). The lighting emitter determining unit 193 determines that the value “2” of the variable N is equal to or less than the total number of the emitters 27 (S9: Yes).

  When the lighting emitter determination unit 193 determines that the value of the variable N is equal to or less than the total number of the emitters 27 (S9: Yes), the process returns to S3. When the synchronization signal reception unit 191 receives the synchronization signal S (S3: Yes), the current supply unit 195 causes the emitter 27 associated with N = 2 (in this embodiment, next to the end emitter 27b). A current is supplied to the emitter 27) for a time T1 (S5). Then, the process proceeds to S7. The control unit 19 repeats the processing of S3 to S9 until the lighting emitter determination unit 193 determines that the value of the variable N updated in S7 is not less than or equal to the total number of emitters 27 (S9: No).

  In this manner, the current supply unit 195 switches the emitter 27 that supplies current in order from the emitter 27 associated with N = 1. Thereby, the lighting of the emitter 27 is switched in the order from N = 1 to N = 10.

  When the current supply unit 195 supplies current to the emitter 27 associated with N = 9 (in this embodiment, the emitter 27c at the end) (S5), the lighting emitter determination unit 193 sets the value of the variable N to “9”. To "10" (S7). Then, the lighting emitter determination unit 193 determines that the value “10” of the variable N is not less than or equal to the total number of the emitters 27 (S9: No), and ends the lighting circuit switching process.

(Function and effect)
Then, the effect by the semiconductor laser light source device 1 of 1st embodiment is demonstrated.

  As described above, according to the semiconductor laser light source device 1, the laser sheets LS (1-9) traveling in different directions are emitted one by one in the order of LS1, LS2,. In addition, in synchronization with the timing at which the semiconductor laser light source device 1 emits each laser beam LS, the imaging device 5 starts exposure. Thereby, every time the laser sheet LS is emitted, the scattered light of the tracer particles 9 is photographed. As a result, a three-dimensional PIV capable of calculating three components of the fluid velocity can be realized by a novel method.

  In addition, by using the semiconductor laser light source device 1 as a PIV light source, it is not necessary to use a plurality of imaging devices 5, and PIV can be realized by a single imaging device 5. Thereby, the enlargement of the PIV system 100 and the increase in cost can be suppressed.

  Furthermore, according to the semiconductor laser light source device 1, the control unit 19 can emit the laser sheet LS traveling in different directions by sequentially switching the emitters 27 to be lit. That is, the laser sheet LS can be emitted without using a mechanically movable member (hereinafter referred to as a movable member) like a conventional rotating mirror. Thereby, the complexity of a light source, an enlargement, and a raise of cost can be suppressed. Furthermore, it is possible to provide a highly reliable PIV light source without being affected by the failure of the movable member.

(Second embodiment)
Next, the semiconductor laser light source device 200 of the second embodiment will be described. In the semiconductor laser light source device 1 of the first embodiment, one laser sheet LS is formed by one emitter 27. However, in the semiconductor laser light source device 200 of the second embodiment, one laser sheet LS is formed by a plurality of emitters. Form. Hereinafter, with reference to FIG.12 and FIG.13, a different point from 1st embodiment is demonstrated focusing on 2nd embodiment.

  FIG. 12 is a schematic diagram when the semiconductor laser light source device 200 of the second embodiment is viewed in the −z direction (see FIG. 3). As shown in FIG. 12, the semiconductor laser light source device 200 includes a semiconductor laser array 35, a submount 37, a heat sink 39, a lens 41, and a control unit 43. In FIG. 12, the outer edge of the lens 41 is shown for convenience of explanation.

  As shown in FIG. 12, the number of emitters 36 in the semiconductor laser array 35 is larger than the number of emitters 27 in the semiconductor laser array 21 of the first embodiment. In the present embodiment, the semiconductor laser array 35 includes 18 emitters (36a to 36r). Further, the length of the submount 37 in the y direction is longer than that of the submount 23 of the first embodiment, and the length of the heat sink 39 in the y direction is longer than that of the sheet sink 25 of the first embodiment.

  The description of the second embodiment will be continued with reference to FIG. FIG. 13 is also a schematic diagram when the lens 41 of the semiconductor laser light source device 200 of the second embodiment is viewed in the −z direction. In FIG. 13, for convenience of explanation, the emitter 36 positioned behind the lens 41 (that is, on the −z direction side) is indicated by a broken line.

  As shown in FIG. 13, the lens 41 includes a plurality of lens regions 42. In the present embodiment, the lens 41 includes 18 lens regions (42a to 42r). Similarly to the first embodiment, the lens regions (42a to 42r) convert the laser light L from the emitters (36a to 36r) into a laser sheet LS.

  Here, the optical axis OA of the lens region 42a and the optical axis OA of the lens region 42j have the same position in the x direction. Therefore, the distance between the optical axis OA of the lens region 42a and the emitter 36a is equal to the distance between the optical axis OA of the lens region 42j and the emitter 36j. As a result, the laser sheets LS converted by the lens regions 42a and 42j travel in parallel when viewed from the y direction.

  Similarly, in the lens region (42b, 42k), the position in the x direction of the optical axis OA is equal, and therefore the distance between the emitter (36b, 36k) (not shown) and the optical axis OA is also equal. As a result, the laser sheets LS converted by the lens regions (42b, 42k) travel in parallel when viewed from the y direction. Lens region (42c, 42l), lens region (42d, 42m), lens region (42e, 42n), lens region (42f, 42o), lens region (42g, 42p), lens region (42h, 42q), and The same applies to the lens regions (42i, 42r).

  The emitters (36a, 36j) are most greatly displaced in the −x direction from the optical axis OA of the lens regions (42a, 42j). Therefore, the laser sheet LS by the emitters (36a, 36j) travels with the greatest inclination in the x direction (see FIG. 7). Further, the emitters (36i, 36r) (not shown) are most displaced in the x direction from the optical axis OA of the lens regions (42i, 42r). Therefore, the laser sheet LS by the emitters (36i, 36r) travels with the greatest inclination in the −x direction (see FIG. 8). Further, the laser sheet LS by the lens regions (42e, 42n) travels in parallel to the yz plane.

  Next, the control unit 43 will be described. The control unit 43 assigns a variable N (for example, N = 1) having the same value to the emitters (36a, 36j). Similarly, the control unit 43 assigns the same variable N value (for example, N = 2) to the emitters (36b, 36k). Similarly, the control unit 43 includes an emitter (36c, 36l), an emitter (36d, 36m), an emitter (36e, 36n), an emitter (36f, 36o), an emitter (36g, 36p), and an emitter (36h, 36q). , And the emitters (36i, 36r) are given the same value of the variable N so as to increase by one in the order.

  As a result, the control unit 43 lights the emitters (36a, 36j) at the same time, and when the lighting is finished, subsequently turns on the emitters (36b, 36k). Then, when the lighting of the emitters (36b, 36k) is finished, the control unit 43 subsequently turns on the emitters (36c, 36l). In this way, the control unit 43 simultaneously lights the two laser sheets LS that travel in parallel as viewed from the y direction. In addition, the control unit 43 switches the emitter 36 to be lit so that the laser sheets LS traveling in different directions as viewed from the y direction are not lit simultaneously.

  As described above, according to the semiconductor laser light source device 200 of the second embodiment, two laser sheets LS traveling on the same plane are overlapped to form a single laser sheet. Thereby, according to 2nd embodiment, since the intensity | strength of a further laser sheet becomes high compared with 1st embodiment, it becomes possible to capture | acquire the tracer particle | grains 9 more reliably and can improve the precision of the measurement result of PIV.

(Another embodiment)
The semiconductor laser light source device is not limited to the configuration of the above-described embodiment, and it is needless to say that various modifications can be made without departing from the scope of the present invention. For example, it is needless to say that the configuration according to another embodiment below may be arbitrarily selected and adopted in the configuration according to the above-described embodiment.

  <1> In the first embodiment and the second embodiment, by shifting the position in the x direction of the optical axis OA of each lens region (33, 42) with respect to the position in the x direction of the emitter (27, 36), Although the laser sheet LS traveling in different directions is formed, the present invention is not limited to this. For example, the positions of the lens regions (33, 42) in the x direction of the optical axis OA may be the same, and the positions of the emitters (27, 36) in the x direction may be shifted.

  Moreover, in 1st embodiment, it is not restricted to the form which adjusts the relative relationship of the position in the x direction of the optical axis OA of the optical axis OA of the corresponding lens area | region 33 in the x direction. For example, as in the semiconductor laser light source device 300 shown in FIG. 14, the same number of mirrors 45 as the emitters 27 (not shown) are prepared, and each mirror 45 is opposed to each emitter 27 (not shown), and further in the z direction. The positions at may be shifted. According to the semiconductor laser light source device 300, the laser light L emitted from each emitter 27 (not shown) is reflected by the mirrors 45 facing each other and enters different positions on the incident surface of the cylindrical lens 15. As a result, the laser light L from each emitter 27 (not shown) is converted into a laser sheet LS traveling in different directions. For convenience, FIG. 14 shows only the laser light that travels parallel to the z direction out of the laser light L emitted from each emitter 27. For convenience of illustration, only three mirrors 45 are shown. In FIG. 14, the y direction corresponds to the “first direction”, and the z direction corresponds to the “second direction”.

  Generally speaking, the incident position in the lens region (33, 42) of the laser light L emitted from at least two emitters (27, 36) of the plurality of emitters (27, 36) is the second. It can be expressed as different from each other in the direction (that is, the x direction or the z direction). More specifically, among the laser light L emitted from at least two emitters (27, 36), in the laser light traveling in parallel to the optical axis OA of the lens region (33, 42), the lens region (33, 42) can be expressed as different incident positions in the second direction (ie, x direction or z direction).

  <2> In the first and second embodiments, the emitter (27, 36) shifted in the x direction and the emitter (27, 36) shifted in the -x direction with respect to the optical axis OA of the lens region (33, 42). ) And is not limited to this. That is, all the emitters (27, 36) may be displaced in the x direction with respect to the optical axis OA of the lens regions (33, 42). Similarly, all the emitters (27, 36) may be displaced in the −x direction with respect to the optical axis OA. In other words, all the laser sheets LS by the respective emitters (27, 36) may travel while being inclined in the x direction / −x direction with respect to the optical axis OA. In addition, according to 1st embodiment and 2nd embodiment, since laser sheet LS advances in a wide range, it can irradiate the three-dimensional space where a fluid exists over a wide range, and observe the fluid over a wide range. can do.

  <3> In the first embodiment, the time (T3 + T4) from when the photographing apparatus 5 receives the synchronization signal S to when the exposure is finished is shorter than the time T1 when the laser sheet LS is emitted (ie, T3 + T4). , T3 + T4 <T1), but may be longer than the time T1 as long as it is shorter than the time interval T2 of the synchronization signal S. Further, the exposure time T4 may be longer than the time T1. More generally speaking, it suffices if one laser sheet LS is lit during the time interval T2 when the synchronization signal S is output. Moreover, the imaging device 5 may start exposure during the interval T2. In addition, one laser sheet LS may be turned on during the time T4, and a plurality of laser sheets LS may not be turned on. Note that the photographing apparatus 5 may record a plurality of images during the time T1.

  <4> In the first embodiment, the cylindrical lens 15 is disposed at an inclination to shift the positions of the emitters 27 and the lens regions 33 in the x direction between the optical axes OA. However, the present invention is not limited to this. For example, instead of the cylindrical lens 15, a lens 47 as shown in FIG. 15 may be used. FIG. 15 is a schematic diagram of the lens 47 when viewed from the −z direction (see FIG. 3), and the emitter 27 located behind the lens 47 (that is, on the −z direction side) is indicated by a broken line.

  <5> Further, although it has been described that the laser light L travels with a large divergence angle in the x direction and a small divergence angle in the y direction, the present invention is not limited thereto. That is, the laser light L may travel with the same divergence angle in the x direction and the y direction. Further, the laser beam L may travel with a small divergence angle in the x direction and a large divergence angle in the y direction.

  <6> Further, in the semiconductor laser light source device 1 of the first embodiment, each laser light L is converted into the laser sheet LS using the cylindrical lens 15, but the present invention is not limited to this. For example, a fly-eye lens can be used in addition to the cylindrical lens. That is, any lens may be used as long as it suppresses the divergence of the laser light L in the x direction (the fast axis direction). For example, a lens that suppresses the divergence of the laser light L not only in the x direction (fast axis direction) but also in the y direction (slow axis direction) may be used.

  <7> In the second embodiment, the lens region 42 may constitute one lens. That is, the lens 41 may be a lens group composed of a plurality of lenses.

1: Semiconductor laser light source device of the first embodiment 13: Light source unit of the first embodiment 15: Cylindrical lens of the first embodiment 19: Control unit of the first embodiment 21: Semiconductor laser array of the first embodiment 27: First Emitter 33 according to the first embodiment: Lens region according to the first embodiment 200: Semiconductor laser light source device according to the second embodiment 35: Semiconductor laser array according to the second embodiment 36: Emitter according to the second embodiment 41: Lens according to the second embodiment 42: Lens area of the second embodiment 191: Synchronization signal receiving unit of the first embodiment 193: Lighting emitter determining unit of the first embodiment 195: Current supply unit of the first embodiment L: Laser light LS: Laser sheet OA : Optical axis

Claims (9)

A light source unit including a plurality of emitters;
A lens that converts each laser beam emitted from the plurality of emitters into a laser sheet that spreads in a first direction and travels with a predetermined width in a second direction orthogonal to the first direction. And having
The lens includes, for each of the plurality of emitters, a plurality of lens regions that convert the laser light emitted from the emitters into the laser sheet,
The laser beam emitted from at least two of the plurality of emitters is different from each other in the second direction in the incident position of the laser beam in the lens region. A control unit that controls the light source unit so that some of the emitters emit the laser light and other emitters other than some of the emitters do not emit the laser light; Have
In the laser light emitted from some of the emitters and the laser light emitted from other emitters other than some of the emitters, the incident position of the laser light in the lens region is the second The semiconductor laser light source device according to claim 1, wherein the semiconductor laser light source devices are different from each other in the direction. The controller is
A lighting emitter determining unit that determines a specific emitter that emits the laser light from a plurality of the emitters;
3. A current supply unit that supplies current to the specific emitter determined by the lighting emitter determination unit and does not supply current to the other emitters other than the specific emitter. The semiconductor laser light source device described. The controller is
A synchronization signal receiving unit for receiving a synchronization signal for synchronizing with exposure of the photographing apparatus;
The lighting emitter determining unit is
Determining the specific emitter that emits the laser light from the plurality of emitters when receiving the synchronization signal;
The semiconductor laser light source device according to claim 3, wherein when the synchronization signal is not received, the specific emitter that emits the laser light is not determined. The plurality of emitters are arranged in the first direction,
The laser beam travels in the first direction and the second direction,
In at least two of the plurality of emitters and two lens regions corresponding to the two emitters, when the positions of the emitters in the second direction are used as a reference, the emitters 5. The semiconductor laser light source device according to claim 1, wherein positions of the lens regions corresponding to the second region differ in the second direction. In at least two of the lens regions of the plurality of lens regions,
The optical axis of one of the lens regions is higher than the emitter corresponding to one of the lens regions when viewed from a third direction orthogonal to both the first direction and the second direction. Is shifted in the direction of
The optical axis of the other lens region is shifted in a direction opposite to the second direction with respect to the emitter corresponding to the other lens region when viewed from the third direction. 5. The semiconductor laser light source device according to 5. In the laser light emitted from at least two of the plurality of emitters, the incident position in the lens region of the laser light coincides in the second direction,
The semiconductor laser according to claim 1, wherein the laser beams emitted from at least two of the emitters are converted into the laser sheets traveling in parallel with each other by the corresponding lens regions. Laser light source device. The optical axes of the plurality of lens regions are arranged in a straight line when viewed from a third direction orthogonal to both the first direction and the second direction,
The semiconductor laser light source device according to claim 1, wherein the lens is inclined by a predetermined angle from the first direction when viewed from the third direction. The lens is a cylindrical lens;
The light source unit includes a semiconductor laser array in which a plurality of the emitters are arranged in the first direction, the first direction is a slow axis direction, and the second direction is a fast axis direction,
The distance from the emitter located at one end to the emitter located at the other end is d, the focal length of the lens is f, the width of the lens in the second direction is h, and the lens is the When the angle inclined from the first direction is θ and the divergence angle in the second direction of the laser light emitted from the plurality of emitters is φ, the following equation:
(D / 2) tan θ + f · tan (φ / 2) <h / 2
The semiconductor laser light source device according to claim 8, wherein:

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