JP2017124532A

JP2017124532A - Manufacturing method of discharge element substrate

Info

Publication number: JP2017124532A
Application number: JP2016004761A
Authority: JP
Inventors: 省吾河村; Shogo Kawamura
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2016-01-13
Filing date: 2016-01-13
Publication date: 2017-07-20

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of producing many discharge element substrates with stable strength at one time from one wafer.SOLUTION: In a discharge element substrate 1100, a protrusion part 1107 protruding in an approximate center position in a longitudinal direction, and chamfered parts 1108 which can engage with the protrusion part 1107 in both end part positions in the longitudinal direction are prepared. In manufacturing, the plurality of discharge element substrates 1100 are formed on a wafer 1109 so that the plurality of discharge element substrates 1100 are arrayed in a state that the protrusion part 1107 of the one discharge element substrate 1100 is engaged with the chamfered part 1108 of the other discharge element substrate 1100, and are cut.SELECTED DRAWING: Figure 3

Description

本発明は、インク等の液体を吐出するための吐出素子基板の製造方法に関する。 The present invention relates to a method for manufacturing a discharge element substrate for discharging a liquid such as ink.

特許文献１には、ウェハー上に複数の吐出素子基板を形成し、隣接する吐出素子基板間の境界にドライエッチングを施した後ブレードダイシングで切断する方法が開示されている。特許文献１によれば、エッチング処理された面に対し防食加工を施すことにより、境界側面の表面精度を向上させることができる。結果、吐出素子基板を高精度に配置させた長尺の液体吐出ヘッドを製造することが可能となる。 Patent Document 1 discloses a method in which a plurality of discharge element substrates are formed on a wafer, dry etching is performed on a boundary between adjacent discharge element substrates, and then cutting is performed by blade dicing. According to Patent Document 1, the surface accuracy of the boundary side surface can be improved by performing anticorrosion processing on the etched surface. As a result, it is possible to manufacture a long liquid discharge head in which the discharge element substrates are arranged with high accuracy.

更に、特許文献１の方法で製造された吐出素子基板においては、長手方向のほぼ中央に短手方向に突出する凸部が形成される。このため、ブレードダイシングのみで切り出したシンプルな長方形型の吐出素子基板に比べて、外力に対しての強度を高めることができる。 Furthermore, in the discharge element substrate manufactured by the method of Patent Document 1, a convex portion protruding in the short direction is formed at substantially the center in the longitudinal direction. For this reason, compared with a simple rectangular discharge element substrate cut out only by blade dicing, the strength against external force can be increased.

特許第５４０４８８３号Japanese Patent No. 5404883

しかしながら、特許文献１に記載の方法では、個々の吐出素子基板が上記のような凸部を有するため、製造時のウェハー上で短手方向にレイアウトできる吐出素子基板の数が十分に確保できない。 However, in the method described in Patent Document 1, since each ejection element substrate has the above-described convex portion, a sufficient number of ejection element substrates that can be laid out in the short direction on the wafer during manufacture cannot be secured.

本発明は、このような課題を解決するためのものである。よってその目的とするところは、安定した強度を有する吐出素子基板を、１つのウェハーからより多く生産することが可能な製造方法を提供することである。 The present invention is to solve such problems. Therefore, an object of the present invention is to provide a manufacturing method capable of producing more discharge element substrates having stable strength from one wafer.

そのために本発明は、所定の方向に配列して液体を吐出するための複数の吐出口と、前記吐出口のそれぞれに液体を導くための複数の液路が形成されたオリフィスプレートと、前記所定の方向に延在し前記複数の液路に液体を供給するための供給口を備えた支持基板と、が積層して構成される吐出素子基板の製造方法であって、前記支持基板は、前記所定の方向のほぼ中央の位置に前記所定の方向と交差する方向に突出する凸部と、前記所定の方向の両端部の位置に前記所定の方向と交差する方向に窪み且つ前記凸部と係合可能な形状になっている面取り部とを有し、ウェハー上において、１つの前記吐出素子基板の前記凸部が他の前記吐出素子基板の前記面取り部に係合した状態で複数の前記吐出素子基板が配列するように、複数の前記吐出素子基板に対応する前記オリフィスプレートと前記支持基板を形成する形成工程と、前記形成工程の後、前記ウェハーを切断して前記複数の吐出素子基板を分離する分離工程と、を有することを特徴とする。 Therefore, the present invention provides a plurality of discharge ports for discharging liquid arranged in a predetermined direction, an orifice plate in which a plurality of liquid passages for guiding liquid to each of the discharge ports are formed, and the predetermined plate And a support substrate having a supply port for supplying liquid to the plurality of liquid passages, and a method of manufacturing the discharge element substrate, wherein the support substrate is A convex portion projecting in a direction intersecting the predetermined direction at a substantially central position in the predetermined direction, and a recess recessed in a direction intersecting the predetermined direction at positions of both end portions of the predetermined direction, and being associated with the convex portion. A plurality of the ejection elements in a state where the convex portions of one ejection element substrate are engaged with the chamfered parts of the other ejection element substrate on a wafer. A plurality of the discharges so that the element substrates are arranged. A step of forming the orifice plate corresponding to the element substrate and the support substrate; and a separation step of separating the plurality of ejection element substrates by cutting the wafer after the forming step. To do.

本発明によれば、安定した強度を有する吐出素子基板を、１つのウェハーから多数生産することが可能となる。 According to the present invention, it is possible to produce a large number of ejection element substrates having stable strength from one wafer.

第１の実施形態で製造する吐出素子基板の斜視図および背面図A perspective view and a rear view of a discharge element substrate manufactured in the first embodiment 第１の実施形態で製造する吐出素子基板の断面図Sectional drawing of the discharge element board | substrate manufactured in 1st Embodiment 第１の実施形態の吐出素子基板を一括生産する際のレイアウト図Layout diagram for batch production of ejection element substrates of the first embodiment 第１の実施形態の吐出素子基板で組み立てられた液体吐出ヘッドの構造図Structural diagram of a liquid discharge head assembled with the discharge element substrate of the first embodiment 吐出素子基板の変形例を示す図The figure which shows the modification of an ejection element board | substrate 第２の実施形態で製造する吐出素子基板の斜視図および背面図A perspective view and a rear view of a discharge element substrate manufactured in the second embodiment 第３の実施形態で製造する吐出素子基板の上面図Top view of a discharge element substrate manufactured in the third embodiment 第３の実施形態の吐出素子基板を一括生産する際のレイアウト図Layout diagram for batch production of ejection element substrates according to the third embodiment

（第一の実施形態）
図１（ａ）および（ｂ）は、本実施形態で製造する吐出素子基板１１００の斜視図および背面図である。また、図２（ａ）および（ｂ）は、図１（ａ）のａ−ａ断面図とｂ−ｂ断面図である。吐出素子基板１１００は、主に、液体を供給するための供給口１１０６や吐出エネルギを発生するための電気配線が形成された支持基板１１０４に、液体を吐出する複数の吐出口が形成されたオリフィスプレート１１０３が積層されて構成される。 (First embodiment)
FIGS. 1A and 1B are a perspective view and a rear view of a discharge element substrate 1100 manufactured in the present embodiment. FIGS. 2A and 2B are an aa sectional view and a bb sectional view in FIG. The discharge element substrate 1100 is mainly an orifice in which a plurality of discharge ports for discharging a liquid are formed on a support substrate 1104 on which a supply port 1106 for supplying a liquid and an electric wiring for generating discharge energy are formed. A plate 1103 is laminated.

供給口１１０６は支持基板１１０４においてＹ方向（長手方向）に沿って延在し、Ｚ方向に貫通している。供給口１１０６から供給された液体は、オリフィスプレート１１０３に形成された複数の液路に分岐し個々の吐出口まで導かれる。支持基板１１０４上の、個々の吐出口に対応する位置には、吐出エネルギを液体に与えるためのヒータ１１０５が配備されている。これらヒータ１１０５に電力を供給するための電極１１０２は、支持基板１１０４のＹ方向両端に設けられている。このような構成のもと、所定の吐出信号に応じてヒータ１１０５に電圧が印加されると、液体に熱エネルギが付与され、吐出口１１０１から液体が吐出されるようになっている。 The supply port 1106 extends along the Y direction (longitudinal direction) in the support substrate 1104 and penetrates in the Z direction. The liquid supplied from the supply port 1106 branches into a plurality of liquid paths formed in the orifice plate 1103 and is guided to individual discharge ports. On the support substrate 1104, heaters 1105 are provided at positions corresponding to the individual discharge ports to give discharge energy to the liquid. Electrodes 1102 for supplying power to the heaters 1105 are provided at both ends of the support substrate 1104 in the Y direction. Under such a configuration, when a voltage is applied to the heater 1105 according to a predetermined discharge signal, thermal energy is applied to the liquid, and the liquid is discharged from the discharge port 1101.

支持基板１１０４のＹ方向におけるほぼ中央の位置には、Ｙ方向と交差する方向である±Ｘ方向に突出する凸部１１０７が形成されている。一方、Ｙ方向における両端部の位置には、±Ｘ方向に窪む面取り部１１０８が形成されている。凸部１１０７の傾斜角度と面取り部１１０８の傾斜角度はどちらも１３５度と等しく、両者は係合可能な形状になっている。本実施形態では、以上説明したような吐出素子基板１１００の複数を、１つのウェハーで一括生産する。尚、「支持基板１１０４のＹ方向におけるほぼ中央の位置」とは、支持基板１１０４をＹ方向で２等分する、Ｘ方向に沿った線を少なくとも含む位置を意味する。即ち、支持基板１１０４をＹ方向で２等分する線分上に、凸部１１０７が存在する。凸部１１０７は、この線分上に存在し、かつこの線分上から支持基板１１０４のＹ方向に±２０％の位置に形成されていることが好ましい。 A convex portion 1107 protruding in the ± X direction, which is a direction intersecting the Y direction, is formed at a substantially central position in the Y direction of the support substrate 1104. On the other hand, chamfered portions 1108 that are recessed in the ± X directions are formed at both ends in the Y direction. Both the inclination angle of the convex portion 1107 and the inclination angle of the chamfered portion 1108 are equal to 135 degrees, and both have a shape that can be engaged. In the present embodiment, a plurality of ejection element substrates 1100 as described above are collectively produced with one wafer. The “substantially central position in the Y direction of the support substrate 1104” means a position including at least a line along the X direction that bisects the support substrate 1104 in the Y direction. That is, the convex portion 1107 exists on a line segment that bisects the support substrate 1104 in the Y direction. It is preferable that the convex portion 1107 exists on the line segment and is formed at a position of ± 20% from the line segment in the Y direction of the support substrate 1104.

図３（ａ）および（ｂ）は、１枚のウェハー１１０９で複数の吐出素子基板１１００を一括生産する際のレイアウトを示す図である。図３（ａ）はウェハー１１０９の全面を示し、図３（ｂ）は図３（ａ）のＣ部の拡大図である。本実施形態のウェハー１１０９はシリコンウェハーであり、ここにフォトリソ技術等によって、複数の吐出素子基板の吐出口１１０１や供給口１１０６などの構造体が、一括して形成される。図では、Ｙ方向に３つの吐出素子基板１１００が配列して成る基板列１１１０が、Ｘ方向に１５列配置されている状態を示している。Ｘ方向に隣接する２つの基板列１１１０は互いにＹ方向に半ピッチ分ずらした状態で交互にレイアウトされている。 FIGS. 3A and 3B are diagrams showing a layout when a plurality of ejection element substrates 1100 are collectively produced with one wafer 1109. FIG. 3A shows the entire surface of the wafer 1109, and FIG. 3B is an enlarged view of a portion C in FIG. The wafer 1109 of this embodiment is a silicon wafer, and structures such as the discharge ports 1101 and the supply ports 1106 of a plurality of discharge element substrates are collectively formed therein by a photolithography technique or the like. In the drawing, a state is shown in which 15 rows of substrate rows 1110 in which three ejection element substrates 1100 are arranged in the Y direction are arranged in the X direction. Two substrate rows 1110 adjacent in the X direction are alternately laid out in a state shifted from each other by a half pitch in the Y direction.

この際、図３（ｂ）に示すように、１つの基板列１１１０に含まれる吐出素子基板１１００の凸部１１０７は、隣接する基板列１１１０に含まれる吐出素子基板１１００の面取り部１１０８に係合するようになっている。同時に、当該１つの基板列１１１０に含まれる吐出素子基板１１００の面取り部１１０８は、隣接する基板列１１１０に含まれる吐出素子基板１１００の凸部１１０７に係合するようになっている。このようなレイアウトにすれば、個々の吐出素子基板１１００のＸ方向における占有幅を、より小さくすることができる。すなわち、同じ型のウェハーを使用した場合であっても、本実施形態ではより多くの基板列１１１０を一括に製造することができる。 At this time, as shown in FIG. 3B, the convex portion 1107 of the discharge element substrate 1100 included in one substrate row 1110 is engaged with the chamfered portion 1108 of the discharge element substrate 1100 included in the adjacent substrate row 1110. It is supposed to be. At the same time, the chamfered portion 1108 of the discharge element substrate 1100 included in the one substrate row 1110 is engaged with the convex portion 1107 of the discharge element substrate 1100 included in the adjacent substrate row 1110. With such a layout, the occupation width in the X direction of each ejection element substrate 1100 can be further reduced. That is, even when the same type of wafer is used, more substrate rows 1110 can be manufactured in a batch in this embodiment.

図３（ａ）および（ｂ）に示すようなレイアウトで複数の吐出素子基板１１００が形成されると、その後、レーザステルスダイシングとテープエキスパンドをこの順に施し、複数の吐出素子基板１１００を分離する。具体的には、ウェハー内部の切断箇所に焦点を合わせ、ここにレーザ光を照射することによって改質領域を形成する。その後、ウェハー１１０９を固定支持していたテープを拡張することにより、上記改質領域でウェハー１１０９を切断し、複数の吐出素子基板１１００を分離する。なお、切断方式としては、ドライエッチング法を採用することもできる。 When a plurality of ejection element substrates 1100 are formed in a layout as shown in FIGS. 3A and 3B, laser stealth dicing and tape expansion are performed in this order, and the plurality of ejection element substrates 1100 are separated. Specifically, the modified region is formed by focusing on the cut portion inside the wafer and irradiating it with laser light. Thereafter, by expanding the tape that has fixedly supported the wafer 1109, the wafer 1109 is cut in the modified region, and a plurality of ejection element substrates 1100 are separated. As a cutting method, a dry etching method can also be adopted.

テープエキスパンドの際、シリコン片のチッピングが懸念されることがある。このような場合には、凸部１１０７および面取り部１１０８の傾斜角度を比較的大きな値に調整すれば、チッピングの発生をある程度抑制することができる。傾斜角度としては、１１０度から１６０度の範囲が好ましいが、本実施形態では、傾斜角度を１３５度にしており、チッピングに伴う傷などを防いでいる。 During tape expansion, chipping of silicon pieces may be a concern. In such a case, the occurrence of chipping can be suppressed to some extent by adjusting the inclination angles of the convex portion 1107 and the chamfered portion 1108 to relatively large values. The inclination angle is preferably in the range of 110 degrees to 160 degrees, but in this embodiment, the inclination angle is set to 135 degrees to prevent scratches associated with chipping.

また、吐出素子基板１１００の中央部の剛性を考慮すると、凸部１１０７のＹ方向の長さＬは大きいほうが好ましい。しかし、本実施形態では隣り合う吐出素子基板１１００の凸部１１０７と面取り部１１０８が係合している為、凸部１１０７をＹ方向に長くしてしまうと、面取り部１１０８の近傍すなわち吐出素子基板１１００の端部の強度は弱くなってしまう。このため、長さＬは吐出素子基板１１００全体の強度を考慮して調整することが好ましい。具体的には、図１（ｂ）に示すように、Ｙ方向において、面取り部１１０８と供給口１１０６の領域が重複しないことが好ましい。 In consideration of the rigidity of the central portion of the ejection element substrate 1100, the length L in the Y direction of the convex portion 1107 is preferably larger. However, in this embodiment, since the convex portion 1107 and the chamfered portion 1108 of the adjacent ejection element substrate 1100 are engaged, if the convex portion 1107 is elongated in the Y direction, the vicinity of the chamfered portion 1108, that is, the ejection element substrate. The strength of the end portion of 1100 is weakened. For this reason, it is preferable to adjust the length L in consideration of the strength of the entire discharge element substrate 1100. Specifically, as shown in FIG. 1B, it is preferable that the areas of the chamfered portion 1108 and the supply port 1106 do not overlap in the Y direction.

図４（ａ）および（ｂ）は、上記方法で製造された吐出素子基板１１００の１つを用いて組み立てられた液体吐出ヘッド１０００の構造を示す図である。図４（ａ）は液体吐出ヘッド１０００をオリフィスプレート１１０３側から見た図、図４（ｂ）は同図（ｂ）におけるｂ−ｂ断面図である。 4A and 4B are views showing the structure of a liquid discharge head 1000 assembled using one of the discharge element substrates 1100 manufactured by the above method. 4A is a view of the liquid discharge head 1000 viewed from the orifice plate 1103 side, and FIG. 4B is a cross-sectional view taken along line bb in FIG. 4B.

液体吐出ヘッド１０００を組み立てる際、まず、吐出素子基板１１００が、その供給口１１０６が予め形成されている流路１３０２と連通するように、支持部材１３００上にレイアウトされ、第１の接着樹脂１３０１を介して接着固定される。その後、液体吐出ヘッド１０００が接着された領域以外の支持部材１３００の領域には、吐出素子基板１１００を取り囲むような開口部が設けられた支持板１４００が、第２の接着樹脂１３０３を介して接着固定される。更に支持部材１３００の上面には、配線基板１２００が第３の接着樹脂１４０１を介して接着固定される。 When the liquid discharge head 1000 is assembled, first, the discharge element substrate 1100 is laid out on the support member 1300 so that the supply port 1106 communicates with the flow path 1302 formed in advance, and the first adhesive resin 1301 is attached. It is bonded and fixed through. Thereafter, a support plate 1400 provided with an opening surrounding the discharge element substrate 1100 is bonded to the region of the support member 1300 other than the region to which the liquid discharge head 1000 is bonded, through the second adhesive resin 1303. Fixed. Further, the wiring board 1200 is bonded and fixed to the upper surface of the support member 1300 via a third adhesive resin 1401.

その後、配線基板１２００のデバイスホールにある端子と吐出素子基板１１００の電極１１０２をワイヤーボンディングなどで電気接続し、吐出素子基板１１００の周囲を第１の封止樹脂１５０１で、電気接続部を第２の封止樹脂１５０２でそれぞれ封止する。この際、第１の封止樹脂１５０１は、図４（ｂ）に示すように、Ｚ方向の高さが吐出素子基板１１００と等しくなる位置まで充填される。 Thereafter, the terminal in the device hole of the wiring board 1200 and the electrode 1102 of the discharge element substrate 1100 are electrically connected by wire bonding or the like, and the periphery of the discharge element substrate 1100 is covered with the first sealing resin 1501 and the electric connection portion is set to the second. The sealing resin 1502 is sealed. At this time, as shown in FIG. 4B, the first sealing resin 1501 is filled up to a position where the height in the Z direction becomes equal to the ejection element substrate 1100.

本実施形態の第１の封止樹脂１５０１は、吐出素子基板１１００の材料であるシリコンよりも大きな線膨張率を有するエポキシ樹脂から成り、環境の温度変化によっては、吐出素子基板１１００の側面に対しＸＹ平面の力が発生することがある。このような状況のもと、中空の供給口１１０６がＹ方向に延在する構成では、Ｘ方向の外力に対する剛性が弱くなることが懸念される。しかし、本実施形態のように吐出素子基板１１００の側面に凸部１１０７が形成されていれば、Ｘ方向への強度が増し、吐出素子基板１１００の変形を防ぐことができる。同時に、吐出素子基板１１００の周囲に充填される第１の封止樹脂の量を、凸部１１０７の側面では周囲に比べて少なくできるので、環境温度が変化しても、吐出素子基板１１００に対するＸ方向の力を小さく抑えておくことができる。 The first sealing resin 1501 of the present embodiment is made of an epoxy resin having a larger linear expansion coefficient than that of silicon, which is a material of the discharge element substrate 1100. Depending on environmental temperature changes, the first sealing resin 1501 may be formed on the side surface of the discharge element substrate 1100. An XY plane force may be generated. Under such circumstances, in the configuration in which the hollow supply port 1106 extends in the Y direction, there is a concern that the rigidity against the external force in the X direction becomes weak. However, if the convex portion 1107 is formed on the side surface of the ejection element substrate 1100 as in the present embodiment, the strength in the X direction increases, and deformation of the ejection element substrate 1100 can be prevented. At the same time, since the amount of the first sealing resin filled around the ejection element substrate 1100 can be reduced on the side surface of the convex portion 1107 as compared with the circumference, the X against the ejection element substrate 1100 can be changed even if the environmental temperature changes. The direction force can be kept small.

さらに、吐出素子基板１１００の中央に凸部１１０７が備えることにより、中央部における支持部材１３００に対する設置面積すなわち第１の接着樹脂を介しての接着面積を増加させることができる。よって、支持部材１３００に対する吐出素子基板１１００の位置も安定させることができる。以上説明したように、本実施形態によれば、安定した強度を有する吐出素子基板を、１つのウェハーから多数生産することが可能となる。 Furthermore, by providing the convex portion 1107 at the center of the ejection element substrate 1100, the installation area with respect to the support member 1300 in the central portion, that is, the adhesion area through the first adhesive resin can be increased. Therefore, the position of the ejection element substrate 1100 with respect to the support member 1300 can also be stabilized. As described above, according to this embodiment, a large number of ejection element substrates having stable strength can be produced from one wafer.

ところで、以上では、一定の傾斜角度を有する凸部１１０７と面取り部１１０８を備える吐出素子基板１１００を例に説明したが、凸部１１０７と面取り部１１０８の形状は、これらが互いに係合すればその形状は特に限定されるものではない。 In the above description, the ejection element substrate 1100 having the convex portion 1107 and the chamfered portion 1108 having a constant inclination angle has been described as an example. However, the shapes of the convex portion 1107 and the chamfered portion 1108 are the same if they are engaged with each other. The shape is not particularly limited.

図５（ａ）〜（ｄ）は、本実施形態における凸部１１０７と面取り部１１０８の変形例を示す図である。図５（ａ）および（ｂ）は、図１（ａ）と同様にＹ方向の長さＬを有する凸部１１０７と面取り部１１０８を有する吐出素子基板を示している。但し、図５（ａ）では、凸部１１０７のＹ方向の両端が曲面になっており、面取り部１１０８もそのような凸部１１０７と係合するような曲面形状になっている。また、図５（ｂ）は、凸部１１０７全体が楕円形状になっており、面取り部１１０８もそのような凸部１１０７と係合する形状になっている。このように、凸部１１０７および面取り部１１０８の表面を曲面形状しておけば、吐出素子基板１１００の切断面も曲面形状になるので、チッピングの発生を更に抑えることができる。 FIGS. 5A to 5D are views showing modifications of the convex portion 1107 and the chamfered portion 1108 in the present embodiment. 5A and 5B show an ejection element substrate having a convex portion 1107 having a length L in the Y direction and a chamfered portion 1108 as in FIG. 1A. However, in FIG. 5A, both ends of the convex portion 1107 in the Y direction are curved surfaces, and the chamfered portion 1108 is also a curved surface shape that engages with such convex portions 1107. In FIG. 5B, the entire convex portion 1107 has an elliptical shape, and the chamfered portion 1108 also has a shape that engages with such convex portion 1107. In this manner, if the surfaces of the convex portion 1107 and the chamfered portion 1108 are curved, the cut surface of the discharge element substrate 1100 is also curved, so that occurrence of chipping can be further suppressed.

一方、図５（ｃ）および（ｄ）は、Ｙ方向の長さＬが図１（ａ）よりも十分に小さい凸部１１０７と面取り部１１０８を有する吐出素子基板を示している。図５（ｃ）は、半円形状の凸部１１０７と、これと係合可能な面取り部１１０８の例を示している。図５（ｄ）は、山型形状の凸部１１０７と、これと係合可能な面取り部１１０８の例を示している。 On the other hand, FIGS. 5C and 5D show an ejection element substrate having a convex portion 1107 and a chamfered portion 1108 whose length L in the Y direction is sufficiently smaller than that in FIG. FIG. 5C shows an example of a semicircular convex portion 1107 and a chamfered portion 1108 that can be engaged therewith. FIG. 5D shows an example of a mountain-shaped convex portion 1107 and a chamfered portion 1108 that can be engaged therewith.

いずれの例においても、凸部１１０７と面取り部１１０８とを係合させた状態で複数の吐出素子基板をウェハー上にレイアウトすることができるので、従来に比べ、安定した強度を有するより多くの吐出素子基板１１００を一括して生産することができる。 In any example, since a plurality of discharge element substrates can be laid out on a wafer in a state in which the convex portion 1107 and the chamfered portion 1108 are engaged, more discharges having a stable strength than conventional ones. The element substrate 1100 can be produced collectively.

（第２の実施形態）
第１の実施形態では、１つの供給口１１０６を有する吐出素子基板１１００を例に説明したが、本発明は、複数の供給口を有する吐出口基板とすることもできる。 (Second Embodiment)
In the first embodiment, the discharge element substrate 1100 having one supply port 1106 has been described as an example. However, the present invention may be a discharge port substrate having a plurality of supply ports.

図６（ａ）および（ｂ）は、本実施形態で製造する吐出素子基板２１００の上面図および背面図である。Ｙ方向に延在しＸ方向に並列する３つの供給口２１０６ａ、２１０６ｂおよび２１０６ｃは、それぞれが対応する吐出口列に液体を供給する。これら３つの供給口２１０６ａ、２１０６ｂおよび２１０６ｃは等しい液体を供給しても良いし、例えばシアンインク、マゼンタインク、イエローインクのように異なる液体を供給しても良い。 FIGS. 6A and 6B are a top view and a rear view of the ejection element substrate 2100 manufactured in the present embodiment. Three supply ports 2106a, 2106b, and 2106c that extend in the Y direction and are arranged in parallel in the X direction supply liquid to the corresponding discharge port arrays. These three supply ports 2106a, 2106b, and 2106c may supply the same liquid, or may supply different liquids such as cyan ink, magenta ink, and yellow ink.

このように、複数の供給口および複数の吐出口列を備えた吐出素子基板であっても、±Ｘ方向に突出する凸部２１０７と、これに係合する面取り部２１０８が形成されていれば、上記実施形態と同じ効果を得ることができる。また、第１の実施形態の凸部１１０７と面取り部１１０８の形状を、本実施形態の凸部２１０７と面取り部２１０８の形状と一致させれば、吐出素子基板１１００と吐出素子基板２１００とを同じウェハー上で高密度にレイアウトすることもできる。 As described above, even if the discharge element substrate includes a plurality of supply ports and a plurality of discharge port arrays, as long as the convex portion 2107 protruding in the ± X direction and the chamfered portion 2108 engaged therewith are formed. The same effects as in the above embodiment can be obtained. Further, if the shapes of the convex portion 1107 and the chamfered portion 1108 of the first embodiment are made to coincide with the shapes of the convex portion 2107 and the chamfered portion 2108 of the present embodiment, the ejection element substrate 1100 and the ejection element substrate 2100 are the same. It is also possible to lay out a high density on the wafer.

（第３の実施形態）
図７は、本実施形態で製造する吐出素子基板３１００の上面図である。上記実施形態では長方形の吐出素子基板を例に説明してきたが、本実施形態では平行四辺形の吐出素子基板を用いている。平行四辺形の吐出素子基板３１００であっても、その長辺の中央部に凸部３１０７を設け、端部に凸部３１０７と係合する面取り部３１０８を用意すれば、上記実施形態と同様にすることが出来る。 (Third embodiment)
FIG. 7 is a top view of the ejection element substrate 3100 manufactured in the present embodiment. In the above embodiment, the rectangular discharge element substrate has been described as an example, but in this embodiment, a parallelogram discharge element substrate is used. Even in the case of the parallelogram-shaped ejection element substrate 3100, if a convex portion 3107 is provided at the center of the long side and a chamfered portion 3108 that engages with the convex portion 3107 is prepared at the end, the same as in the above embodiment. I can do it.

図８は、本実施形態におけるウェハー上の複数の吐出素子基板３１００のレイアウト図である。図８に示すように、隣接する吐出素子基板３１００の凸部３１０７と面取り部３１０８を互いに係合させることにより、複数の吐出素子基板を高密度にレイアウトすることができる。すなわち、本実施形態においても上記実施形態と同様、安定した強度を有する吐出素子基板を、１つのウェハーから多数生産することが可能となる。 FIG. 8 is a layout diagram of a plurality of ejection element substrates 3100 on the wafer in the present embodiment. As shown in FIG. 8, a plurality of discharge element substrates can be laid out with high density by engaging the convex portions 3107 and the chamfered portions 3108 of the adjacent discharge element substrates 3100 with each other. That is, also in the present embodiment, as in the above-described embodiment, a large number of ejection element substrates having stable strength can be produced from one wafer.

１１００吐出素子基板
１１０１吐出口
１１０３オリフィスプレート
１１０４支持基板
１１０６供給口
１１０７凸部
１１０８面取り部
１１０９ウェハー 1100 Discharge element substrate 1101 Discharge port 1103 Orifice plate 1104 Support substrate 1106 Supply port 1107 Convex portion 1108 Chamfered portion 1109 Wafer

Claims

A plurality of discharge ports for discharging liquid arranged in a predetermined direction, and an orifice plate formed with a plurality of liquid passages for guiding the liquid to each of the discharge ports;
A support substrate that includes a supply port that extends in the predetermined direction and supplies liquid to the plurality of liquid paths;
Is a manufacturing method of a discharge element substrate configured by laminating,
The support substrate has a convex portion projecting in a direction intersecting the predetermined direction at a substantially central position in the predetermined direction, and a depression in a direction intersecting the predetermined direction at positions of both end portions in the predetermined direction. And a chamfered portion that has a shape engageable with the convex portion,
A plurality of the discharge element substrates are arranged on the wafer such that the plurality of discharge element substrates are arranged in a state where the convex portions of one of the discharge element substrates are engaged with the chamfered portions of the other discharge element substrates. Forming the corresponding orifice plate and the support substrate;
And a separation step of separating the plurality of discharge element substrates by cutting the wafer after the forming step.

The method of manufacturing an ejection element substrate according to claim 1, wherein the separation step includes a step of using dry etching or laser stealth dicing for the wafer.

In the forming step, a plurality of substrate rows formed by arranging a plurality of ejection element substrates in the predetermined direction are arranged in a direction intersecting the predetermined direction in a state shifted by a half pitch in the predetermined direction. The method for manufacturing an ejection element substrate according to claim 1, wherein the orifice plate and the support substrate corresponding to the plurality of ejection element substrates are formed.

4. The method of manufacturing an ejection element substrate according to claim 1, wherein wiring for applying energy for ejecting liquid from each of the ejection ports is formed on the support substrate. 5.

5. The method of manufacturing an ejection element substrate according to claim 1, wherein the ejection element substrate is configured such that a plurality of the orifice plates are stacked in parallel with respect to one support substrate. 6.

6. The ejection element substrate manufacturing method according to claim 1, wherein the protrusion protrudes with an inclination of 110 to 160 degrees with respect to a longitudinal side of the support substrate.

The ejection element substrate manufacturing method according to claim 1, wherein the convex portion and the chamfered portion are engaged through a curved surface shape.

The method for manufacturing an ejection element substrate according to claim 1, wherein the ejection element substrate is a rectangle or a parallelogram.

A plurality of discharge ports for discharging liquid arranged in a predetermined direction; an orifice plate having a plurality of liquid passages for guiding the liquid to each of the discharge ports; and extending in the predetermined direction. A discharge element substrate configured by laminating a support substrate having a supply port for supplying liquid to the plurality of liquid paths,
The support substrate has a convex portion projecting in a direction intersecting the predetermined direction at a substantially central position in the predetermined direction, and a depression in a direction intersecting the predetermined direction at positions of both end portions in the predetermined direction. And a chamfered portion having a shape engageable with the convex portion.

A plurality of discharge ports arranged in a predetermined direction and discharging liquid according to a discharge signal; an orifice plate formed with a plurality of liquid passages for guiding the liquid to each of the discharge ports; and the plurality of ports extending in the predetermined direction And a support substrate having a supply port for supplying a liquid to the liquid path, and a liquid ejection head comprising an ejection element substrate configured by stacking,
The support substrate has a convex portion projecting in a direction intersecting the predetermined direction at a substantially central position in the predetermined direction, and a depression in a direction intersecting the predetermined direction at positions of both end portions in the predetermined direction. And a chamfered portion having a shape engageable with the convex portion.