JP2017103345A5 - - Google Patents
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- JP2017103345A5 JP2017103345A5 JP2015235358A JP2015235358A JP2017103345A5 JP 2017103345 A5 JP2017103345 A5 JP 2017103345A5 JP 2015235358 A JP2015235358 A JP 2015235358A JP 2015235358 A JP2015235358 A JP 2015235358A JP 2017103345 A5 JP2017103345 A5 JP 2017103345A5
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- JP
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- Prior art keywords
- film
- plasma processing
- processing method
- gas
- deposited film
- Prior art date
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- 210000002381 Plasma Anatomy 0.000 claims 20
- 238000003672 processing method Methods 0.000 claims 18
- 239000007789 gas Substances 0.000 claims 17
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N Silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Claims (9)
酸素元素を含有する第１のガスとシリコン元素を含有する第２のガスとの混合ガスを用いて前記処理室の内壁に堆積膜を堆積させる第１の工程と、A first step of depositing a deposited film on the inner wall of the processing chamber using a mixed gas of a first gas containing an oxygen element and a second gas containing a silicon element;
前記第１の工程後、前記ウェハをエッチングするとともに前記堆積膜を除去する第２の工程とを有し、A second step of etching the wafer and removing the deposited film after the first step;
前記混合ガスの流量に対する前記第１のガスの流量の比は、０．５以下である、プラズマ処理方法。The plasma processing method, wherein a ratio of a flow rate of the first gas to a flow rate of the mixed gas is 0.5 or less.
前記堆積膜の膜密度は、前記堆積膜の膜表面に到達する金属の拡散を抑制する膜密度である、プラズマ処理方法。 The plasma processing method, wherein the film density of the deposited film is a film density that suppresses diffusion of metal reaching the film surface of the deposited film.
前記堆積膜の膜密度は、１．９ｇ／ｃｍThe film density of the deposited film is 1.9 g / cm. 3Three 以上である、プラズマ処理方法。This is the plasma processing method.
酸素元素を含有する第１のガスとシリコン元素を含有する第２のガスとの混合ガスを用いて前記処理室の内壁に堆積膜を堆積させる第１の工程と、A first step of depositing a deposited film on the inner wall of the processing chamber using a mixed gas of a first gas containing an oxygen element and a second gas containing a silicon element;
前記第１の工程後、前記ウェハをエッチングするとともに前記堆積膜を除去する第２の工程とを有し、A second step of etching the wafer and removing the deposited film after the first step;
前記堆積膜は、第１の膜と第２の膜を含み、The deposited film includes a first film and a second film,
前記第１の膜のシリコン元素含有量は、前記第２の膜のシリコン元素含有量より多い、プラズマ処理方法。The plasma processing method, wherein the silicon element content of the first film is greater than the silicon element content of the second film.
前記第１の膜は、前記混合ガスの流量に対する前記第１のガスの流量の比が０．５以下となる前記混合ガスを用いて生成され、The first film is generated using the mixed gas in which a ratio of a flow rate of the first gas to a flow rate of the mixed gas is 0.5 or less,
前記第２の膜は、前記混合ガスの流量に対する前記第１のガスの流量の比が０．５より大きい前記混合ガスを用いて生成される、プラズマ処理方法。The plasma processing method, wherein the second film is generated using the mixed gas in which a ratio of a flow rate of the first gas to a flow rate of the mixed gas is larger than 0.5.
前記第１の膜の膜密度は、前記堆積膜の膜表面に到達する金属の拡散を抑制する膜密度である、プラズマ処理方法。The plasma processing method, wherein the film density of the first film is a film density that suppresses diffusion of a metal reaching the film surface of the deposited film.
前記第１の膜の膜密度は、１．９ｇ／ｃｍThe film density of the first film is 1.9 g / cm. 3Three 以上である、プラズマ処理方法。This is the plasma processing method.
前記金属がタングステンの場合、前記堆積膜の膜密度は、１．９３ｇ／ｃｍWhen the metal is tungsten, the film density of the deposited film is 1.93 g / cm. 3Three 以上であり、That's it,
前記金属がチタンの場合、前記堆積膜の膜密度は、１．９４ｇ／ｃｍWhen the metal is titanium, the film density of the deposited film is 1.94 g / cm. 3Three 以上である、プラズマ処理方法。This is the plasma processing method.
前記第１のガスは、酸素ガスであり、The first gas is oxygen gas;
前記第２のガスは、四塩化シリコンガスである、プラズマ処理方法。The plasma processing method, wherein the second gas is silicon tetrachloride gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015235358A JP6557585B2 (en) | 2015-12-02 | 2015-12-02 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015235358A JP6557585B2 (en) | 2015-12-02 | 2015-12-02 | Plasma processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017103345A JP2017103345A (en) | 2017-06-08 |
| JP2017103345A5 true JP2017103345A5 (en) | 2018-06-21 |
| JP6557585B2 JP6557585B2 (en) | 2019-08-07 |
Family
ID=59017491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015235358A Active JP6557585B2 (en) | 2015-12-02 | 2015-12-02 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6557585B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6799550B2 (en) * | 2018-01-16 | 2020-12-16 | 東京エレクトロン株式会社 | How to clean parts of plasma processing equipment |
| JP6799549B2 (en) * | 2018-01-16 | 2020-12-16 | 東京エレクトロン株式会社 | How to clean parts of plasma processing equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100198678B1 (en) * | 1996-02-28 | 1999-06-15 | 구본준 | Interconnector and method of manufacturing the same |
| JP2009158504A (en) * | 2007-12-25 | 2009-07-16 | Panasonic Corp | Apparatus for manufacturing semiconductor and method of manufacturing semiconductor device |
| JP4792097B2 (en) * | 2009-03-25 | 2011-10-12 | 株式会社東芝 | Nonvolatile memory device and manufacturing method thereof |
| JP2013214584A (en) * | 2012-04-02 | 2013-10-17 | Hitachi High-Technologies Corp | Plasma processing apparatus and plasma processing method |
| WO2014042192A1 (en) * | 2012-09-13 | 2014-03-20 | 東京エレクトロン株式会社 | Method for treatment of treated substrate, and plasma treatment device |
| CN104766890B (en) * | 2014-01-06 | 2018-04-27 | 上海和辉光电有限公司 | Thin film transistor (TFT) and its manufacture method and application |
-
2015
- 2015-12-02 JP JP2015235358A patent/JP6557585B2/en active Active
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