JP2017101281A - Micro-wave surface wave excited plasma film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a micro-wave surface wave excited plasma film deposition apparatus capable of depositing uniformly on a material to be treated.SOLUTION: In a micro-wave surface wave excited plasma film deposition apparatus including a projection waveguide 52b projecting into a chamber 1, the projection waveguide 52b is longer than at least a half-wave length of a micro-wave, and a micro-wave take-out part 6 is arranged on a tube wall 52bof the projection waveguide 52b facing to the belly of a stationary wave MSof the micro-wave formed in the projection waveguide 52b.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming apparatus that generates microwave surface wave excited plasma in a region close to a conductor and performs chemical vapor deposition (CVD) using the generated plasma.

  As an apparatus for forming, for example, a DLC (diamond-like carbon) film on the surface of a conductive material, a microwave surface wave excitation plasma film forming apparatus is used.

  In the microwave surface wave excitation plasma film forming apparatus disclosed in Patent Document 1, a raw material gas for film formation is supplied into a chamber, and a negative bias voltage is applied to a cylindrical conductive material to be processed to form a sheath region. The A cylindrical conductor treated material is placed on the microwave introduction window installed on the bottom wall of the chamber, and the microwave is irradiated to the cylindrical conductor treated material in the axial direction of the cylindrical conductor treated material. Is done. That is, the microwave is passed from one end of the cylindrical conductor processed material to the other end (through the cylindrical conductor processed material through the microwave introduction window installed on the bottom wall of the chamber. By irradiation so as to propagate in the longitudinal direction), plasma is generated with high density near the surface of the cylindrical conductor processed material, and a DLC film is efficiently formed on the surface of the cylindrical conductor processed material. .

  The microwave surface wave excitation plasma film-forming apparatus of the cited document 2 also irradiates the microwave from the microwave supply port that opens at the bottom of the chamber so as to propagate in the longitudinal direction of the cylindrical conductor processed material.

  Further, in Patent Document 3, when forming a DLC film by disposing a workpiece at a position away from the microwave introduction window, the workpiece is supported at a position corresponding to the antinode of the standing wave of the microwave in the chamber. It has been proposed to arrange the body.

Japanese Patent No. 4973887 JP 2014-189897 A JP-A-8-134656

  In a conventional microwave surface wave excitation film forming apparatus, microwaves are radiated into a chamber from a microwave introduction window installed on the bottom wall of the chamber. Since the microwave radiated into the chamber turns the raw material gas into plasma, the microwave energy attenuates as the distance from the microwave introduction window increases.

  Further, in the above microwave surface wave excitation plasma film forming apparatus, the processing material is set on the microwave introduction window installed on the bottom wall of the chamber, and the microwave is transmitted from the microwave introduction window to the axis of the processing material. Since the irradiation is performed in the direction, it is not possible to form a uniform film on a long workpiece. Further, although a film can be uniformly formed on a short object to be processed, only one object to be processed can be formed by one process. If the workpieces are stacked in the axial direction, a plurality of workpieces can be processed in a single process. However, as the distance from the microwave introduction window increases, the microwave energy decreases and The number is limited.

  Moreover, in the microwave surface wave excitation plasma film-forming apparatus proposed by Patent Document 3, the microwave that reaches the material to be processed is still weak, and the film cannot be efficiently formed on the material to be processed.

  That is, the conventional microwave surface wave excitation plasma film-forming apparatus cannot form a film uniformly on the material to be processed. In addition, a large number of materials cannot be processed at the same time, resulting in high processing costs.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a microwave surface wave excitation plasma film forming apparatus capable of uniformly forming a film on a material to be processed.

  The microwave surface wave excitation plasma film-forming apparatus according to the present invention made to solve the problem includes a chamber, a source gas supply unit that supplies a source gas into the chamber, and a gas that discharges the gas in the chamber A discharge section, a microwave oscillator for generating a microwave, a waveguide for propagating the microwave generated by the microwave oscillator into the chamber, and extracting the microwave from the waveguide and arranging the microwave in the chamber A microwave extraction unit that propagates to a conductor workpiece to be provided; and a negative voltage application unit that applies a negative bias voltage to the conductor workpiece, and is generated by applying a negative bias voltage. A microwave is propagated to the surface sheath region of the conductive processing material of weak plasma to form the coating film derived from the source gas on the surface of the conductive processing object A microwave surface wave-excited plasma deposition apparatus, wherein the waveguide includes a projecting waveguide projecting into the chamber, and the projecting waveguide is at least longer than a half wavelength of the microwave. The wave extraction portion is disposed on the tube wall of the protruding waveguide that desires the antinode of the standing wave of the microwave formed in the protruding waveguide.

  Microwaves are generated in the direction intersecting the axial direction of the projecting waveguide at the microwave extraction section disposed on the tube wall of the projecting waveguide where the antinode of the standing wave of the microwave formed in the projecting waveguide is desired. It is taken out. Therefore, since the intensity of the microwave extracted from the microwave extraction unit is high, a film can be uniformly formed on the entire object to be processed.

  A plurality of microwave extraction portions can be disposed on the tube wall of the protruding waveguide. For this reason, a to-be-processed object can be simultaneously processed by arrange | positioning a to-be-processed object to each of several microwave extraction part.

  In the above microwave surface wave excitation plasma film forming apparatus, the protruding waveguide may be provided with a conductive hermetic lid at a terminal portion. Accordingly, the protruding waveguide can be accommodated in the chamber, and the film forming apparatus can be reduced in size. In addition, since the microwave is reflected by the conductive hermetic lid, the standing wave stands stably.

  The protruding waveguide may be a cylindrical waveguide. Thereby, a plurality of microwave extraction portions can be radially extended on the outer periphery of the cylindrical waveguide, and a film can be uniformly formed on the toroidal object.

  A plurality of the microwave extraction portions may be arranged in the circumferential direction of the protruding waveguide. As a result, it is possible to form films on the objects to be processed as many as the number of microwave extraction portions simultaneously.

  A plurality of the microwave extraction portions may be arranged in the axial direction of the protruding waveguide. As a result, it is possible to form films on the objects to be processed as many as the number of microwave extraction portions simultaneously.

  The projecting waveguide may be filled with a dielectric. This shortens the wavelength of the microwave propagating through the protruding waveguide and increases the antinodes of the standing wave. As a result, the number of microwave extraction units can be increased.

  The protruding waveguide may include a conductor antenna for propagating the microwave in the core portion. Thereby, attenuation of the microwave propagating through the protruding waveguide is suppressed.

  The microwave extraction unit may be provided with strip lines formed of a conductor and a dielectric in a radial pattern. Thereby, a microwave can be efficiently propagated to a plate-shaped workpiece.

  The microwave extraction unit may include an extraction coaxial waveguide. The microwave can be efficiently propagated to the object to be processed by setting the object to be processed upright at the exit end of the extraction coaxial waveguide.

  Moreover, the said extraction coaxial waveguide is good to provide the diameter-expansion taper part couple | bonded with the said to-be-processed to-be-processed object. Thereby, the microwave can be efficiently propagated through the workpiece.

  In addition, the conductor antenna of the protruding waveguide core portion may be a pipe shape, and may include a cooling unit that supplies a coolant to the pipe-shaped conductor antenna. Thereby, the protruding waveguide can be cooled.

  Microwaves are generated in the direction intersecting the axial direction of the projecting waveguide at the microwave extraction section disposed on the tube wall of the projecting waveguide where the antinode of the standing wave of the microwave formed in the projecting waveguide is desired. It is taken out. Therefore, since the intensity of the extracted microwave is high, it is possible to uniformly form a film on a large number of conductor objects.

It is a cross-sectional schematic diagram of the microwave surface wave excitation plasma film-forming apparatus which concerns on Embodiment 1 of this invention. It is a principal part top view of FIG. It is a principal part enlarged view of FIG. It is a cross-sectional schematic diagram of the microwave surface wave excitation plasma film-forming apparatus which concerns on Embodiment 2 of this invention. It is a principal part enlarged view of FIG. It is a cross-sectional schematic diagram of the microwave surface wave excitation plasma film-forming apparatus which concerns on Embodiment 3 of this invention. It is the sectional view on the AA line of FIG. It is a principal part cross-sectional schematic diagram of the microwave surface wave excitation plasma film-forming apparatus which concerns on Embodiment 4 of this invention. It is a figure which shows the principal part of FIG. It is a principal part cross-sectional schematic diagram of the microwave surface wave excitation plasma film-forming apparatus which concerns on Embodiment 5 of this invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the invention will be described in detail with reference to the drawings.

(Embodiment 1)
As shown in FIG. 1, the microwave surface wave excitation plasma film forming apparatus of the present embodiment discharges the gas in the chamber 1, the source gas supply unit 2 that supplies the source gas into the chamber 1, and the chamber 1. A gas discharge unit 3, a microwave oscillator 4 that generates a microwave, a waveguide 5 that propagates the microwave generated by the microwave oscillator 4 into the chamber 1, and a microwave from the tube wall of the waveguide 5 A plurality of microwave extraction portions 6 for propagating microwaves to the conductor workpiece W ₀ disposed in the chamber 1, and a negative voltage application portion for applying a negative bias voltage to the conductor workpiece W ₀ 7.

  The chamber 1 is made of, for example, stainless steel and includes a bottomed cylindrical portion 11 and a lid 12, and the lid 12 is engaged with the cylindrical portion 11 via an O-ring 0. The chamber 1 is grounded.

  The waveguide 5 has a laterally long base waveguide 51 provided with a microwave matching unit 8, and a vertically long waveguide 52 connected to the base waveguide 51 in a T shape and having a distal end protruding into the chamber 1. have.

  The vertically long waveguide 52 includes a bottom connecting waveguide 52 a that is connected to the bottom of the chamber 1 and a protruding waveguide 52 b that protrudes into the chamber 1. A water-cooling jacket 52f is provided at the connecting portion between the bottom connecting waveguide 52a and the protruding waveguide 52b.

The length of the protruding waveguide 52b is preferably set longer than λg / 2, where λg is the wavelength of the microwave propagating through the dielectric (dielectric constant ε). Thus, the anti-node of the standing wave MS ₀ of the microwave is formed on at least one projecting waveguide 52b.

The wavelength λg of the microwave is expressed by the following equation, where c is the speed of light and T is the frequency of the microwave.

λg = cT (1)

Therefore, for example, when the microwave frequency T is 3 GHz in a vacuum (ε = 1), the wavelength λg of the microwave is 100 mm. Therefore, the length of the protruding waveguide 52b is preferably set to 50 mm or more. Further, when the dielectric constant is increased, the wavelength λg is shortened, and the interval between the standing waves MS ₀ is shortened, so that the packing density of the conductor processed object W ₀ in the axial direction can be increased.

The protruding waveguide 52b is provided with an airtight lid 52e at the end portion to prevent the gas in the chamber 1 from entering the protruding waveguide 52b. Further, for example, since the airtight lid 52e is conductive, it has conductivity, so that the microwave propagating from the bottom to the top is reflected by the airtight lid 52e. As a result, the position of the antinode of the standing wave MS ₀ is suppressed from changing in the axial direction. The airtight lid 52e may be omitted.

  The pipe-shaped conductor antenna 52c disposed in the core of the protruding waveguide 52b acts as an antenna for the coaxial waveguide and propagates microwaves. Thereby, attenuation of the microwave is suppressed. In the present embodiment, since air is introduced into the pipe-shaped conductor antenna 52c, temperature rises of the pipe-shaped conductor antenna 52c and the protruding waveguide 52b can be suppressed. The pipe-shaped conductor antenna 52c may be a rod-shaped conductor antenna or may be omitted.

The microwave extraction portion 6 is a U-shaped cross section installed in the microwave extraction hole 52b ₁ that opens in the tube wall (outer peripheral wall) 52b ₀ of the protruding waveguide 52b that desires the antinode of the microwave standing wave MS _0. And a conductive skirt 62 covering the dielectric window member 61. The other end of the workpiece W _o having one end held in the conductive holding jig 9 is inserted into the dielectric window member 61 (see FIG. 3). The dielectric window member 61 is made of, for example, quartz.

In the present embodiment, a holding jig 9 that is insulated from the chamber 1 that supplies power from the negative voltage application unit 7 to the workpiece W ₀ is provided.

  The microwave oscillator 4 oscillates a microwave with a frequency of 2.45 GHz (wavelength 120 mm) and 50 W, for example.

Microwaves oscillated from the microwave oscillator 4 are matched by the microwave matching unit 8 so as to be guided through the base waveguide 51. Base microwaves propagating the waveguide 51 propagates through the bottom coupling waveguide 52a to the protruding waveguide 52b to propagate produce standing waves MS _0. In the microwave plasma surface wave excitation film forming apparatus of the present embodiment, the length of the protruding waveguide 52b is 1.5λg (= 1.5 × 120 mm = 180 mm). There are 3 bellies of MS _{0 in} the vertical direction.

The microwave extraction hole 52b ₁ is opened in the tube wall of the protruding waveguide 52b overlooking the antinode of the microwave standing wave MS ₀ , and the microwave with the maximum electric field intensity is protruded and guided by the microwave extraction portion 6. It is taken out in the direction (radial direction) intersecting the axial direction of the wave tube 52b.

  In the microwave surface wave-excited plasma film forming apparatus of this embodiment, since three microwave antinodes can be formed in the vertical direction (the axial direction of the protruding waveguide 52b), the microwave extraction portion 6 is set in the vertical direction (axial direction). Three can be arranged. A large number of microwave extraction portions 6 can be arranged in the circumferential direction, and in the microwave surface wave excitation plasma film forming apparatus of this embodiment, they are arranged every 90 degrees as shown in FIG. Accordingly, a total of twelve microwave extraction units 6 are arranged, and twelve workpieces Wo can be processed at a time.

The source gas supply unit 2 supplies source gas, inert gas, and hydrogen gas into the chamber 1. As the source gas, for example, TMS (tetramethylsilane: Si (CH ₃ ) ₄ ) and methane (CH ₄ ) are used as the DLC source gas. Argon (Ar) is used as the inert gas. In this case, O ₂ is cut. The gas discharge unit 3 is connected to a vacuum pump (not shown), and discharges the gas inside the chamber 1 to the outside of the chamber 1. The source gas may be a gas that forms a film of a component other than DLC.

The negative voltage application unit 7 applies a negative pulse voltage to the conductor workpiece W ₀ via the conductor holding jig 9 insulated from the chamber 1. The negative voltage application unit 7 changes the applied voltage from, for example, 0 V to −500 V, then changes from −500 V to 0 V, and repeats this at a cycle of 500 Hz. Sheath layer is formed near the surface of the workpiece W ₀ negatively charged. Conductor voltage to be applied to the object to be processed W ₀ it is not limited to -500 V. Any voltage may be used as long as the sheath layer is formed. The sheath layer is a layer having a low electron density, that is, a positive polarity layer having a relative dielectric constant ε˜1 in the microwave frequency band. By increasing the absolute value of the negative voltage to be applied, the thickness of the sheath layer can be increased. This sheath layer acts as a dielectric that propagates surface waves to the interface between the plasma and the object in contact with the plasma.

(Embodiment 2)
The microwave surface wave excited plasma film forming apparatus of the present embodiment is the same as the microwave surface wave excited plasma film forming apparatus of the first embodiment in that the protruding waveguide is partially filled with a dielectric (for example, quartz) other than air. to differ greatly. The same components are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 4, the microwave surface wave excitation plasma film forming apparatus of this embodiment includes a cylindrical body 52d made of a dielectric material in a protruding waveguide 52b. The dielectric is, for example, quartz, and a pipe-shaped conductor 52c is disposed in the quartz cylindrical body 52d.

The wavelength λg of the microwave propagating through the cylindrical body 52d becomes shorter in inverse proportion to the dielectric constant √ of the cylindrical body 52d. Accordingly, the anti-node of the standing wave MS ₀ of the same is the microwave surface wave excitation plasma film forming apparatus of Embodiment 1 length even microwaves projecting waveguide 52b can be a number in the axial direction. As a result, the microwave plasma surface wave excitation plasma deposition apparatus of the present embodiment can process more workpieces Wo simultaneously than the microwave surface wave excitation plasma deposition apparatus of Embodiment 1.

Microwave extraction section 6A, as shown in FIG. 5, a microwave standing wave MS ₀ opening 6A ₁ opened to wall 52b ₀ of projecting waveguide 52b positions overlooking the belly and the tubular body 52d has a recess 6A ₂ formed. The recess 6A ₂ ends of the plate-shaped object to be processed Wo is fitted.

In the microwave surface wave excitation plasma film-forming apparatus of this embodiment, since the cylindrical body 52d made of a dielectric is provided in the protruding waveguide 52b, the wavelength of the microwave propagating through the protruding waveguide 52b is reduced. short it can many antinodes of the standing wave MS ₀ if the same length of the projecting waveguide 52 b, it is possible to simultaneously process means more an object to be processed Wo. Even if the length of the protruding waveguide 52b is short, it is not necessary to reduce the number of workpieces Wo. When the length of the protruding waveguide 52b is short, the chamber 1 can also be made small, and the microwave surface wave excitation plasma film forming apparatus can be miniaturized.

(Embodiment 3)
The microwave surface wave excited plasma film forming apparatus of this embodiment is greatly different from the microwave surface wave excited plasma film forming apparatus of Embodiment 2 in the microwave extraction part and the object to be processed. The same components are denoted by the same reference numerals and description thereof is omitted.

In the microwave surface wave excitation plasma film-forming apparatus of this embodiment, as shown in FIG. 6, the microwave extraction part 6B is a strip line. One end of the strip line 6B is inserted into the opening 6A ₁ that opens to the tube wall of the projecting waveguide 52b positions overlooking the antinodes of the standing wave MS ₀ microwave, insertion end dielectric made of tubular It contacts the outer periphery of the body 52d. The other end of the strip line 6B abuts the inner peripheral surface of the donut-shaped object to be processed W ₁ (see FIG. 7).

Stripline 6B includes a central conductive plate transmission line 6B ₃ separated by two outer metal piece 6B ₁ and strip dielectric 6B _2. The impedance of the strip line 6B be to impedance matching of the projecting waveguide 52 b, thereby establishing a standing wave MS ₁ microwave taken out efficiently.

As shown in FIG. 7, a total of eight strip lines 6B are arranged at every 45 degrees on the outer periphery of the dielectric cylindrical body 52d. Therefore, it is possible to uniformly deposited donut-like object to be processed W _1.

Stripline 6B can be more uniformly deposited handle donut-like object to be processed W ₁ by placing the outer periphery of the dielectric made of the cylindrical body 52 d.

(Embodiment 4)
The microwave surface wave excited plasma film forming apparatus of this embodiment is greatly different from the microwave surface wave excited plasma film forming apparatus of Embodiment 3 in the microwave extraction part and the object to be processed. The same components are denoted by the same reference numerals and description thereof is omitted. FIG. 8 is a fragmentary cross-sectional view of the main part of the microwave surface wave excitation plasma deposition apparatus according to the present embodiment.

The microwave extraction unit 6D of the microwave surface wave excitation plasma film forming apparatus according to the present embodiment is a coaxial waveguide that changes the propagation direction of the microwaves by about 90 degrees. One end portion of the coaxial waveguide 6D is inserted into the opened opening 6A ₁ to wall 52b ₀ of projecting waveguide 52b positions overlooking the antinodes of the standing wave MS ₀ microwave, cylindrical at the other end article to be treated W ₂ is placed.

The coaxial waveguide 6D includes, for example, a conductor 6D ₂ and a dielectric 6D ₃ such as quartz disposed in the core of an iron waveguide 6D ₁ , and the length of the conductor 6D ₂ is optimal as follows. by reduction, thereby establishing a standing wave MS ₂ of the microwave extraction efficiency.

The coaxial waveguide 6D of the present embodiment is bent 45 ° upward from the horizontal portion, and further bent 45 ° and extends in the vertical direction to become an enlarged diameter tapered portion. The length of the horizontal portion of the core conductor 6D ₂ is L ₁ , the length of the 45 ° bent portion is L ₂ , the length of the vertical portion is L ₃ , and the length of the taper portion is L ₄ (see FIG. 11). . By making the lengths L ₁ , L ₂ , L ₃ , and L ₄ of each part equal to n (λg / 4), the extracted standing wave MS ₂ of the microwave can be made to stand up efficiently. Here, λg is the wavelength of the microwave propagating through the coaxial waveguide 6c, n is a positive integer, and n = 1, 2, 3,.

The other end of the coaxial waveguide 6D of the tubular object to be processed W ₂ is placed is, since the enlarged diameter tapered, be efficiently propagate the microwave to the cylindrical object to be processed W ₂ it can.

In the microwave surface wave-excited plasma film forming apparatus of this embodiment, the microwave extraction part 6D made of a coaxial waveguide is arranged symmetrically on the outer peripheral wall (tube wall) of the protruding waveguide 52b. One of it can be simultaneously formed as a cylindrical object to be processed W _2.

For example, it is possible to simultaneously deposit a microwave extraction portion 6D consisting of a coaxial waveguide by arranging in the longitudinal direction, into four cylindrical object to be processed W _2.

(Embodiment 5)
The microwave surface wave excited plasma film forming apparatus of this embodiment is greatly different from the microwave surface wave excited plasma film forming apparatus of Embodiment 4 in the microwave extraction unit. The same components are denoted by the same reference numerals and description thereof is omitted. FIG. 10 is a fragmentary cross-sectional view of the main part of the microwave surface wave excitation plasma deposition apparatus according to this embodiment.

Microwave extraction portion 6E of the microwave surface wave excited plasma film deposition apparatus of this embodiment is provided with a strip line 6e ₁ and the coaxial waveguide 6e _2.

The strip line 6e ₁ includes a central conductor plate transmission line 6e ₁₃ separated by both outer metal pieces 6e ₁₁ and a strip-like dielectric 6e ₁₂ , and forms an open end whose one end is not covered with the metal piece 6e _11. doing.

The strip line 6e ₁ extends in the radial direction of the protruding waveguide 52b, and the open end opens to the tube wall 52b ₀ of the protruding waveguide 52b at a position where the antinode of the microwave standing wave MS ₀ is desired. is inserted into the opening 6A _1, the insertion end is in contact with the outer periphery of the dielectric made of the cylindrical body 52 d. The length L of the center conductor plate transmission line 6e ₁₃ may satisfy the following formula.

L = (λg / 4) × n (2)

Here, λg is the wavelength of the microwave propagating through the stripline 6e ₁ , n is a positive integer, and n = 1, 2, 3,.

When the length L of the center conductor plate transmission line 6e ₁₃ satisfies the expression (2), the standing wave MS ₁ can be stably stood up.

The coaxial waveguide 6e ₂ includes, for example, a conductor 6e ₂₂ disposed in the core of an iron waveguide 6e ₂₁ , and one end portion is straight and the other end portion is a diameter-expanding tapered shape.

One end of the coaxial waveguide 6e ₂ is in contact with the mouth of the opening 6e ₁₁₀ opened in the metal piece 6e ₁₁ at a position where the antinode of the microwave standing wave MS ₁ propagating in the strip line 6e ₁ is desired. The coaxial waveguide 6e ₂ stands up. The diameter tapered at the other end a cylindrical object to be processed W ₂ is placed.

Manufactured at low cost since it is possible to propagate to the tubular object to be processed W ₂ without bending the coaxial waveguide 90 degrees back and forth thereby placing the stripline microwave surface wave excitation plasma film forming apparatus of this embodiment I can do it.

1 ... Chamber 2 ... Raw material gas supply unit 3 ... Gas discharge unit 4 ...・ ・ ・ ・ ・ ・ Microwave Oscillator 5 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Waveguide 52b ・ ・ ・ ・ ・ ・ ・ ・ Projected waveguide 52b ₀・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Tube wall 52c・ ・ ・ ・ ・ ・ Conductor antenna 52d ・ ・ ・ ・ ・ ・ ・ ・ Dielectric (cylindrical dielectric, quartz cylinder)
52e: Conductive airtight lid 6, 6A: Microwave extraction part 6B: Microwave extraction part (strip line)
6D ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Microwave extraction part (coaxial waveguide)
6E ... Microwave extraction part (strip line + coaxial waveguide)
7 ·········· Negative voltage application unit 9 ············· Air cooling unit W ₀ , W ₁ , W _{2. 0} , MS ₁ , MS ₂ .. Microwave standing wave

Claims (11)

A chamber, a source gas supply unit for supplying source gas into the chamber, a gas discharge unit for discharging the gas in the chamber, a microwave oscillator for generating microwaves, and a microwave generated by the microwave oscillator A waveguide for propagating the inside of the chamber, a microwave extraction section for extracting the microwave from the waveguide and propagating it to a conductor workpiece disposed in the chamber, and the conductor workpiece A negative voltage application section for applying a negative bias voltage to the surface, and forming the coating film derived from the source gas on the surface of the conductor object by plasma-forming the source gas with the microwave An excited plasma deposition apparatus,
The waveguide comprises a protruding waveguide protruding into the chamber, the protruding waveguide being at least longer than a half wavelength of the microwave;
The microwave extraction portion is a microwave surface wave excitation plasma component disposed on a tube wall of the protruding waveguide that is desired to have an antinode of the standing wave of the microwave formed in an internal space of the protruding waveguide. Membrane device.   The microwave surface wave-excited plasma deposition apparatus according to claim 1, wherein the protruding waveguide includes a conductive hermetic lid at a terminal end.   The microwave surface wave excitation plasma film-forming apparatus according to claim 1, wherein the protruding waveguide is a cylindrical waveguide.   The microwave surface wave excitation plasma film-forming apparatus according to claim 3, wherein a plurality of the microwave extraction portions are arranged in a circumferential direction of the protruding waveguide.   The microwave surface wave excitation plasma film-forming apparatus according to any one of claims 1 to 4, wherein a plurality of the microwave extraction portions are arranged in an axial direction of the protruding waveguide.   The microwave surface wave excited plasma film forming apparatus according to claim 1, wherein the protruding waveguide is filled with a dielectric.   The microwave surface wave excitation plasma film-forming apparatus according to claim 1, wherein the protruding waveguide includes a conductor antenna that propagates the microwave to a core portion.   The microwave surface wave excitation plasma film-forming apparatus according to claim 1, wherein the microwave extraction unit includes a strip line.   The microwave surface wave excitation plasma film forming apparatus according to claim 1, wherein the microwave extraction unit includes an extraction coaxial waveguide.   The microwave surface wave excitation plasma film-forming apparatus according to claim 9, wherein the extraction coaxial waveguide includes a diameter-expanding taper portion that is coupled to the conductor workpiece.   The microwave surface wave excitation plasma film-forming apparatus of any one of Claims 7-10 provided with the cooling part which the said conductor antenna is pipe shape, and supplies a refrigerant | coolant to the said pipe-shaped conductor antenna.

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