JP2005089814A - Apparatus for forming thin film on three-dimensional hollow container - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for forming a thin film in a three-dimensional hollow container with the use of a cylindrical cavity resonator, which efficiently supplies microwave energy into the three-dimensional hollow container, uniformizes a distribution of plasma density, arbitrarily sets the center of the distributed plasma, uniformly forms the thin film, and can cope with various shapes of the container. <P>SOLUTION: The apparatus for forming the thin film in the three-dimensional hollow container with a plasma CVD method comprises the cylindrical cavity resonator 1 for sealing the microwave energy therein; and a sleeve antenna 16 with an element length of λ/2 as a means of supplying a microwave electric power into a vacuum chamber 2 so as to radiate the microwave into the vacuum chamber 2 and generate plasma therein. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention forms a thin film on the surface of a three-dimensional hollow container such as a plastic bottle, a plastic cup, a plastic tray, a paper container, a paper cup, a paper tray, and other hollow plastic molded articles by plasma-assisted chemical vapor deposition (PECVD). It relates to the device.

  In recent years, a thin film is formed on the surface of a three-dimensional hollow container such as a plastic container, such as a plastic bottle, a plastic cup, a plastic tray, a paper container, a paper cup, a paper tray, and other hollow plastic molded articles. Attempts have been made to improve water vapor barrier properties, surface wettability, and the like.

  One method for forming these functional thin films is to form a thin film on the surface of a container by a chemical reaction of a process gas by plasma-assisted chemical vapor deposition (PECVD).

  As an example of the device configuration, for example, as shown in FIG. 5, there is a vacuum chamber 2 made of a cylindrical tube made of quartz glass or the like in a metal container forming a cylindrical cavity resonator 1 in the microwave. A three-dimensional hollow container 3 that is a film formation target is arranged, and the inside of the vacuum chamber 2 is vacuum-sucked to maintain a constant reduced pressure state, and further, a source gas is injected from a source gas inlet 4.

  Next, the microwave power for injecting the raw material gas from the raw material gas introduction rod 4 into the inside of the three-dimensional hollow container 3 which is a film formation target and generating plasma in the hollow container 3 is generated by the microwave oscillator 5. It is generated and guided to the inside of the cylindrical cavity resonator 1 through the waveguide 6, and this microwave energy generates plasma inside the three-dimensional hollow container 3 that is a film formation target (for example, (See Patent Document 1).

  Here, as a method of introducing the microwave power into the cylindrical cavity resonator 1, FIG. 5 shows a method of injecting from the side of the cavity resonator 1, but in addition to this method, the cylindrical cavity resonator 1. There is also a method of injecting from the lid portion 7 on the upper surface (for example, see Patent Document 2).

  As another method of introducing another microwave power into the cylindrical cavity resonator 1, the energy generated from the microwave oscillator 5 performs impedance matching via the waveguide 6 as shown in FIG. 6. There is also a method in which the signal is sent to the impedance matching unit 9 and becomes the transmission mode of the coaxial line 11 at the coaxial waveguide converter 10.

  The outer circumference (earth) of the outer conductor 11 b constituting the coaxial line 11 is connected to a metal cylindrical cavity resonator 1, and the inner conductor 11 a of the coaxial line 11 is λ from the wall surface portion of the cavity resonator 1. / 4 projects into the cavity resonator 1 (see, for example, Patent Document 3).

  This is a λ / 4 whip antenna 12 configuration, and the electric field is strongest at the tip of the inner conductor 11a.

Further, the inner conductor 11a of the coaxial line 11 has a pipe shape, and has a raw material gas injection mechanism as well as a microwave power supply to the container 3 or the like (see, for example, Patent Document 4).

  Accordingly, the tip portion which is the gas ejection port 13 is also the strongest point of the electric field of the microwave, so that plasma is generated around here.

  The conventional plasma generation method as described above has several problems. For example, in the apparatus shown in FIG. 5, the microwave power supply portion inside the cavity resonator 1 is provided on the side surface of the cavity resonator 1 or Since it is on the top surface, a loss is generated in the internal quartz glass tube or the like constituting the vacuum chamber 2, and the microwave energy in the container 3 is reduced to affect the plasma density.

  In addition, depending on the non-uniformity of the material electrical characteristics (dielectric constant and the like) of quartz glass, the plasma distribution in the container 3 may be affected.

  Next, in the apparatus shown in FIG. 6, the λ / 4 whip antenna portion protruding into the cavity resonator 1, that is, the tip of the inner conductor 11a of the coaxial line 11 is the electric field strongest point of the microwave energy. Has the highest plasma density, and the plasma spreads around here.

  Therefore, since microwave energy is directly injected into the container 3, plasma is generated more efficiently than the apparatus system shown in FIG. 5. However, this system also has some problems.

  That is, the λ / 4 whip antenna 12 of the microwave emitting portion is λ / 4 height from the bottom of the cavity resonator 1.

  Since it is only about 3 cm at a general frequency of use of 2.45 GHz, as shown in FIG. 6, when the container 3 is a container that is long in the height direction, the plasma is concentrated on the plug portion of the container, Since the plasma density is low at the bottom surface, the film formation uniformity in the container 3 is lacking and variation occurs.

  In order to avoid this phenomenon, the portion where the inner conductor 11a of the coaxial line 11 is exposed is defined as n (λ / 2) + (λ / 4) (n = 0, 1, 2, 3,...). Although a method of obtaining the height from the bottom surface of the resonator 1 is also conceivable, since the peaks and valleys are generated in the electromagnetic field distribution in the antenna portion and are not uniform, the uniformity of the plasma density in the container 3 is also impaired.

  Further, when the height of the container 3 is changed, the center position of the plasma density distribution inside the container 3 cannot be arbitrarily set.

Prior art documents are shown below.
Special Table 2002-543292 Special table 2001-518685 gazette Japanese Patent Laid-Open No. 9-301895 Japanese Patent Laid-Open No. 7-135094

  The present invention solves the problems of the related art, and in a plasma CVD apparatus using a cylindrical cavity resonator, the microwave energy is efficiently supplied to the three-dimensional hollow container, and the plasma density distribution is made uniform. A thin film of a three-dimensional hollow container that can arbitrarily set the center position of the plasma density in any container of any height, can form a uniform thin film on the container, and can cope with various container shapes. A film forming apparatus is provided.

  The present invention has been made to solve the above-described problems. The invention according to claim 1 of the present invention is a vacuum in which a cylindrical cavity resonator 1 is formed and a three-dimensional hollow container 3 is accommodated. A three-dimensional hollow container in which a raw material gas introduction pipe for introducing a raw material gas into the chamber 2 is arranged, a raw material gas is introduced into the container 3, and a thin film is formed on the inner surface of the container 3 by plasma CVD. In a thin film deposition apparatus, a sleeve antenna 16 having an element length of λ / 2 is used as means for supplying microwave power into a vacuum chamber 2 that forms the cylindrical cavity resonator 1 and encloses microwave energy. A thin film deposition apparatus for a three-dimensional hollow container, characterized in that plasma is generated by radiating microwaves into the chamber 2.

  According to a second aspect of the present invention, in the thin film deposition apparatus for a three-dimensional hollow container according to the first aspect, the inner conductor 11a of the sleeve antenna 16 is a cylindrical tube, and a raw material gas is passed through the tube, A three-dimensional hollow container having a source gas ejection port 13 at the tip of the inner conductor 11a of the sleeve antenna 16 and supplying a source gas into the chamber 2 from the ejection port 13 This is a thin film deposition apparatus.

  The invention according to claim 3 of the present invention is the thin film deposition apparatus for a three-dimensional hollow container according to claim 1 or 2, wherein the sleeve antenna 16 is a central axis in the vacuum chamber 2 where the cylindrical cavity resonator 1 is formed. A thin film deposition apparatus for a three-dimensional hollow container, which is located above and can be arranged at an arbitrary position in the height direction.

  The invention according to claim 4 of the present invention is the thin film deposition apparatus for a three-dimensional hollow container according to any one of claims 1 to 3, wherein the sleeve antenna 16 forms a cylindrical cavity resonator 1. 2 is a thin film deposition apparatus for a three-dimensional hollow container, which is fixed to a bottom surface portion in 2 via a coaxial line attaching / detaching mechanism portion 17 and has a structure in which several types of sleeve antennas 16 can be replaced.

  According to a fifth aspect of the present invention, in the thin film deposition apparatus for a three-dimensional hollow container according to any one of the first to fourth aspects, the sleeve antenna 16 is provided in the cylindrical cavity resonator 1 for containing microwaves. A non-metallic vacuum chamber 2 having a low heat loss and a heat resistance such as a quartz glass tube is disposed so that the sleeve antenna 16 is covered with the three-dimensional hollow container 3 in the vacuum chamber 2. A three-dimensional structure characterized in that the inside of the vacuum chamber 2 is kept in a vacuum state, plasma is generated by a microwave power and a raw material gas from the sleeve antenna 16, and a film forming process is performed on the container 3. This is a thin film forming apparatus for a hollow container.

The present invention forms a cylindrical cavity resonator, arranges a raw material gas introduction pipe for introducing a raw material gas into a vacuum chamber containing a three-dimensional hollow container, introduces the raw material gas into the container, In a thin film deposition apparatus for a three-dimensional hollow container that deposits a thin film on the inner surface of the container by plasma CVD, microwave power is supplied into a vacuum chamber that forms the cylindrical cavity resonator and encloses microwave energy. As a means, microwave energy can be efficiently supplied to the three-dimensional hollow container by using a sleeve antenna with an element length of λ / 2 to generate plasma by radiating microwaves into the chamber. Since the plasma density distribution in the processing space can be made almost uniform, variations in processing results on the film formation surface are reduced, a stable thin film can be formed, and Since the center position of the plasma density can be set to an arbitrary height even in the container shape having a moderate height, it is possible to provide a thin-film deposition apparatus for a three-dimensional hollow container that can cope with various container shapes. .

  Hereinafter, a basic configuration of a thin film deposition apparatus for a three-dimensional hollow container according to the present invention will be described with reference to FIGS.

  FIG. 1 is a side sectional view showing an embodiment of the present invention. Mainly, a metal cylindrical cavity resonator 1 for confining microwaves and a vacuum chamber 2 for maintaining a vacuum state therein are provided. Further, a three-dimensional hollow container 3 which is a film formation target is disposed inside thereof.

  The vacuum chamber 2 may be any non-metallic material such as a quartz glass tube as long as it has a low loss of microwave power, is heat resistant to plasma heat, and is mechanically sufficiently resistant in a vacuum state. The vacuum chamber 2 will be described as a quartz glass tube.

  Next, the inside of the quartz glass tube which is the vacuum chamber 2 is evacuated through the exhaust port 14 by a vacuum pump unit (not shown).

  An opening is provided in the upper part of the cylindrical cavity resonator 1 and the quartz glass tube so that the container 3 as a film forming object can be taken in and out, and a lid 7 for sealing the opening is provided. Exists.

  The lid portion 7 is made of metal and has a structure capable of completely sealing the microwave power in the cavity resonator 1 and completely sealing in the vacuum chamber 2.

  The container 3 is inserted with the cap part downward, and a spacer part 8 for holding the container 3 is present at the lower part of the quartz glass tube.

  In the microwave energy injection method for generating plasma, first, an electromagnetic wave serving as a plasma energy source is radiated by the microwave oscillator 5.

  In general, the frequency of this electromagnetic wave is often 2.45 GHz, but other frequencies are not a problem.

  The radiated microwave is sent to the impedance matching unit 9 for impedance matching performed to efficiently supply power to the cavity resonator 1 through the waveguide 6, and further proceeds to the coaxial waveguide converter 10. To do.

  Generally, a stub tuner or an E-H tuner is used as the matching unit 9, and only the inner conductor 11 a of the coaxial line 11 enters the waveguide 6 in the coaxial waveguide converter 10. The outer conductor 11 b of the coaxial line 11 is electrically connected to the waveguide 6.

  The microwave traveling in the waveguide 6 is excited by the inner conductor 11 a of the coaxial line 11 and proceeds to the cavity resonator 1 as a transmission mode of the coaxial line 11.

  Moreover, the conversion to the coaxial line transmission mode can be efficiently performed by moving and adjusting the plunger 15.

  Here, it is the inner conductor 11a of the coaxial line 11. The inner conductor 11a forms a cylindrical tube, that is, a pipe shape, which is a feature of the present invention, and a gas supply source (not shown) for supplying gas. ) And the like, and a raw material gas injection mechanism is also provided together with a microwave power supply to the three-dimensional hollow container 3 which is a film formation target.

  The coaxial line 11 reaches almost the center of the three-dimensional hollow container 3 that is a film formation target inside the cavity resonator 1, and a sleeve antenna 16 that radiates microwave energy is disposed at the tip of the coaxial line 11. .

  Next, the periphery of the sleeve antenna 16 will be described in detail with reference to FIG.

  The outer conductor 11b of the coaxial line 11 is in electrical contact with the bottom of the cylindrical cavity resonator 1, and a coaxial line attaching / detaching mechanism 17 capable of exchanging the coaxial line 11 is provided at the bottom.

  As a result, when the size of the container 3 that is a film formation target is changed, the coaxial line 11 including the sleeve antenna 16 can be replaced with an optimum one.

  In the coaxial line 11, a coaxial spacer 18 is inserted in order to keep the outer conductor 11b and the inner conductor 11a at a constant interval, and the coaxial spacer 18 is processed so as not to cause a vacuum leak.

  A source gas ejection port 13 is provided at the tip of the inner conductor 11a, from which gas is supplied to the container 3 that is a film formation target.

  The inner conductor 11a is exposed at a length of about λ / 4 at the tip of the coaxial line 11, and the outer conductor 11b is folded back at a length of about λ / 4 from the exposed portion of the inner conductor 11a. .

  That is, the sleeve antenna 16 constitutes a λ / 2 dipole antenna in the radiation portion of the radio wave, and the radiation characteristic is the same as that of the λ / 2 dipole antenna, and the influence of the ground portion (external conductor 11 b) of the coaxial line 11 The structure is not affected.

  Therefore, there is no problem even if the length of the coaxial line 11 is changed because the electromagnetic wave is emitted only from this part, and the exposed part of the inner conductor 11a of the coaxial line 11 from the bottom part of the cavity resonator 1 as in the prior art. Is an n (λ / 2) + (λ / 4) (n = 0, 1, 2, 3,...) Length, the electromagnetic field strength peaks and valleys are exposed on the exposed portion of the inner conductor 11a. This will affect the plasma density distribution.

  Therefore, since the electromagnetic wave radiation source is a single point in the sleeve antenna system of the present invention, it is possible to give a substantially uniform plasma density distribution to the three-dimensional hollow container 3 that is a film formation target. Since the coaxial line length can be arbitrarily set even when the size of the container 3 is changed, the container 3 can be arranged at an optimal antenna position at all times.

  Next, another embodiment of the present invention will be described with reference to FIG.

  The embodiment in FIG. 3 is a three-dimensional hollow which is a film formation object by one microwave oscillator 5 (not shown) and one vacuum pump part (not shown) based on the basic apparatus shown in FIG. The container 3 is to be subjected to a thin film forming process at the same time.

  Although FIG. 3 shows a state in which the four containers 3 are simultaneously formed into thin films, the number of films is not limited to this.

  In the straight waveguide 6, a plurality of coaxial waveguide converters 10 are arranged in parallel at equal intervals in the tube axis direction. From the microwave power supply side toward the tip of the waveguide 6, Each coaxial waveguide converter 10 is configured to sequentially increase the coupling coefficient with respect to the microwave power, so that uniform microwave energy can be supplied to each cylindrical cavity resonator 1.

  As described with reference to FIG. 1, each coaxial waveguide converter 10 has a configuration in which only the inner conductor 11a of the coaxial line 11 penetrates into the waveguide 6, and the outer conductor 11b of the coaxial line 11 is guided by the waveguide. It is electrically connected to the tube 6.

  The microwave that has traveled through the waveguide 6 is excited by the inner conductor 11 a of the coaxial line 11, becomes a transmission mode of the coaxial line 11, and travels to each cavity resonator 1.

  The inner conductor 11a has a pipe shape, and a raw material gas is supplied from a gas supply source (not shown) or the like to supply each raw material gas to each quartz glass tube. It also has a raw material gas injection mechanism as well as a microwave power supply to.

  Each coaxial line 11 reaches almost the center of the three-dimensional hollow container 3 that is a film formation target inside each cavity resonator 1, and a sleeve antenna 16 that radiates microwave energy is disposed at the tip. Yes.

  Each of the cylindrical cavity resonators 1 is installed on a metal base plate 22 and has a structure that is in an electrically completely conductive state and does not leak microwave power.

  Similarly to the description in FIG. 1, an opening is provided at the top of each cylindrical cavity resonator 1 and the quartz glass tube that is the vacuum chamber 2 so that a three-dimensional hollow container 3 that is a film formation target can be taken in and out. A metal lid 7 is provided to prevent leakage of microwave power and vacuum state during film formation.

  By adopting such an apparatus configuration, it is possible to simultaneously process the three-dimensional hollow container 3 as a plurality of film formation objects with one microwave oscillator 5 and a vacuum pump.

  Next, still another embodiment of the present invention will be described with reference to FIG.

  The embodiment in FIG. 4 is a form developed based on the basic apparatus shown in FIG. 1 and the multiple simultaneous film forming apparatus shown in FIG. 3, and includes one microwave oscillator 5 (not shown) and one vacuum pump. The three-dimensional hollow container 3 that is a film formation target is to be subjected to film formation at the same time by a section (not shown).

  Although FIG. 4 shows a state where eight containers 3 are simultaneously formed into a thin film, the number of films is not limited to this.

  The principle of this apparatus is that microwave energy from a microwave oscillator 5 (not shown) is sent to a coaxial waveguide converter 10 via a waveguide 6.

As described in FIG. 1, the coaxial waveguide converter 10 has a configuration in which only the inner conductor 11a of the coaxial line 11 enters the inside of the waveguide 6, and the outer conductor 11b of the coaxial line 11 is a waveguide. 6 is electrically connected.

  The microwave energy that has traveled in the waveguide 6 is excited by the inner conductor 11a of the coaxial line 11 and becomes a transmission mode of the coaxial line 11 and is supplied to the central portion of the circular cavity resonator 19 in the upper part. Is done.

  At this time, unlike the first and second embodiments, the inner conductor 11a of the coaxial line 11 does not require the supply of a source gas, and thus has a metal rod shape.

  The circular cavity resonator 19 has a thickness of about the short side direction of the cross section of the waveguide 6, and the circular area has an area that can be sufficiently mounted on the vacuum chamber 2 installed on the top.

  The coaxial line 11 from the waveguide 6 is connected to the center of the bottom surface of the circular cavity resonator 19, and the outer conductor 11 b of the coaxial line 11 and the bottom of the circular cavity resonator 19 are electrically completely connected. It is in a conductive state.

  The inner conductor 11 a of the coaxial line 11 protrudes inward from the bottom of the circular cavity resonator 19 by a length of λ / 4.

  That is, the λ / 4 whip antenna 12 is formed, and the microwaves spread radially from the circular cavity resonator 19 toward the wall surface.

  And the 2nd coaxial waveguide conversion part 20 is installed so that it may become equal intervals on the circumference of the same distance from this center part.

  By arranging in this way, it is possible to supply uniform microwave energy to the three-dimensional hollow container 3 as each film formation target.

  The microwaves that have traveled radially through the circular cavity resonator 19 are excited by the inner conductor 11a of the second coaxial waveguide converter 20 and become a transmission mode of the coaxial line 11, thereby the circular cavity resonator. It progresses to the inside of the vacuum chamber 2 of 19 upper part.

  Further, the inner conductor 11a has a pipe shape, and a source gas is supplied from a gas supply source (not shown) or the like into the pipe for supplying the source gas into each vacuum chamber 2, and each film formation target In addition to supplying microwave power to the three-dimensional hollow container 3 which is a product, it also has a raw material gas injection mechanism.

  The second coaxial waveguide converter 20 forms a coaxial line 11 shape above the upper surface of the circular cavity resonator 19, and a sleeve antenna 16 that radiates microwave energy is disposed at the tip of the second coaxial waveguide converter 20. The antenna 16 is positioned substantially at the center of the container 3 as a film formation target in each vacuum chamber 2.

  An upper portion of the vacuum chamber 2 is provided with an opening so that the container 3 as a film formation target can be taken in and out, and a lid portion 7 is provided (not shown).

  For evacuation, the circular cavity resonator 19 is a structure that does not leak air, and has a vent hole with the upper vacuum chamber 2. A vacuum pump (not shown) is used for the decompression process of the vacuum chamber 2. Thus, a vacuum is drawn from the exhaust port 14 through the inside of the circular cavity resonator 19.

  Further, a metal cover 21 is provided above the circular cavity resonator 19 so as to cover each vacuum chamber 2, and microwaves do not leak at a portion where the cover 21 and the circular cavity resonator 19 are in contact with each other. Are kept in a completely conductive state.

  The cover 21 is for preventing microwave leakage to the outside of the apparatus when the vacuum chamber 2 is made of a material that transmits microwaves, such as a quartz glass tube.

  If the vacuum chamber 2 is made of metal, the joint with the circular cavity resonator 19 is completely shielded, and there is no leakage of microwave power from the lid, this cover is unnecessary. By adopting such an apparatus configuration, it is also possible to simultaneously process the three-dimensional hollow container 3 that is a plurality of film formation objects with one microwave oscillator 5 and a vacuum pump.

It is a sectional side view which shows one Example of the thin film film-forming apparatus concerning this invention. It is an expanded sectional side view which shows a part of one Example of the thin film film-forming apparatus concerning this invention. It is side sectional drawing which shows another Example of the thin film film-forming apparatus concerning this invention. It is a perspective view which shows another Example of the thin film film-forming apparatus concerning this invention. It is side sectional drawing which shows one Example of the thin film film-forming apparatus which is a prior art. It is a sectional side view which shows another Example of the thin film film-forming apparatus which is a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Cylindrical cavity resonator 2 ... Vacuum chamber 3 ... Three-dimensional hollow container (film formation object)
4 ... Raw material gas introduction pipe 5 ... Microwave oscillator 6 ... Waveguide 7 ... Cover part 8 ... Spacer part 9 ... Impedance matching unit 10 ... Coaxial waveguide conversion part 11 ... Coaxial line 11a ... Internal conductor 11b ... External conductor 12 ... λ / 4 whip antenna 13 ... Raw material gas ejection port 14 ... Exhaust port 15 ... Plunger 16 ... Sleeve antenna 17 ... Coaxial line attaching / detaching mechanism 18 ... Coaxial spacer 19 ... Circular cavity resonator 20 ... Second coaxial waveguide Pipe conversion part 21 ... Metal cover 22 ... Metal base plate

Claims (5)

  A cylindrical cavity resonator is formed, a raw material gas introduction pipe for introducing a raw material gas is disposed in a vacuum chamber that accommodates a three-dimensional hollow container, the raw material gas is introduced into the container, and the inner surface of the container is introduced. In a thin film deposition apparatus for a three-dimensional hollow container for depositing a thin film by plasma CVD, an element is provided as means for supplying microwave power into a vacuum chamber that forms the cylindrical cavity resonator and encloses microwave energy. A thin film deposition apparatus for a three-dimensional hollow container, wherein a plasma is generated by radiating microwaves into the chamber using a sleeve antenna having a length of λ / 2.   2. The thin film deposition apparatus for a three-dimensional hollow container according to claim 1, wherein the inner conductor of the sleeve antenna is a cylindrical tube, a raw material gas is passed through the pipe, and a raw material is provided at the tip of the inner conductor of the sleeve antenna. A thin film deposition apparatus for a three-dimensional hollow container having a gas ejection port and supplying a source gas into the chamber from the ejection port.   3. The thin film deposition apparatus for a three-dimensional hollow container according to claim 1 or 2, wherein the sleeve antenna is positioned on a central axis in a vacuum chamber forming a cylindrical cavity resonator, and the height direction is arranged at an arbitrary position. A thin film deposition apparatus for a three-dimensional hollow container, characterized in that it can be used.   The thin film deposition apparatus for a three-dimensional hollow container according to any one of claims 1 to 3, wherein the sleeve antenna is connected to a bottom surface in a vacuum chamber where a cylindrical cavity resonator is formed via a coaxial line attaching / detaching mechanism. A thin film deposition apparatus for a three-dimensional hollow container, which is fixed and has a structure in which several types of sleeve antennas can be exchanged.   5. The thin film deposition apparatus for a three-dimensional hollow container according to claim 1, wherein a microwave power of a quartz glass tube or the like is provided so as to cover the sleeve antenna in a cylindrical cavity resonator that contains microwaves. A non-metallic vacuum chamber with low heat loss and heat resistance is disposed, and a three-dimensional hollow container is disposed in the vacuum chamber so as to cover the sleeve antenna. A thin film deposition apparatus for a three-dimensional hollow container, characterized in that plasma is generated by microwave power and a source gas from an antenna, and a film deposition process is performed on the container.