JP2017084888A - Semiconductor light-emitting device, vehicular lighting fixture, and method for manufacturing semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with high emission quality.SOLUTION: The semiconductor light-emitting device includes: a plurality of semiconductor light-emitting elements 11 arranged on a substrate 10; a light guide member 12 that is disposed above a region between the plurality of semiconductor light-emitting elements 11 and is not disposed above each center of the plurality of semiconductor light-emitting elements 11; and a protective layer 13 disposed above the plurality of semiconductor light-emitting elements 11 and above the light guide member.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor light emitting device including a plurality of semiconductor light emitting elements, a vehicular lamp, and a method for manufacturing the semiconductor light emitting device.

  Inventions of light emitting modules and light emitting devices using a plurality of semiconductor light emitting elements are known (for example, see Patent Documents 1 and 2).

  FIG. 7A is a schematic cross-sectional view showing a light emitting module described in Patent Document 1. FIG. The light emitting module is disposed between a plurality of semiconductor light emitting elements 72 disposed on the mounting substrate 71, a wavelength conversion member 73 disposed to face each light emitting surface of the semiconductor light emitting elements 72, and the adjacent semiconductor light emitting elements 72. A reflective member 74.

  According to the light emitting module described in Patent Document 1, since light guided in the wavelength conversion member 73 is reflected by the reflection member 74 and emitted from the upper surface of the wavelength conversion member 73, crosstalk (of the semiconductor light emitting element 72) is achieved. (A phenomenon in which light is emitted from a non-arranged position or a non-lighted semiconductor light emitting element 72 position) is suppressed, and light use efficiency can be improved.

  However, since the reflecting member 74 is disposed between the semiconductor light emitting elements 72, the luminance in the region immediately above the reflecting member 74 is lowered, and the occurrence of dark grids (dark areas observed in the region between the semiconductor light emitting elements 72) becomes remarkable. .

  The light emitting device described in Patent Document 2 is characterized in that a plurality of GaN-based semiconductor light emitting elements are integrally formed on an insulating substrate and connected in series. A plurality of semiconductor light emitting elements are divided into two groups, and the two groups may be connected in parallel to two electrodes so as to have opposite polarities.

  FIG. 7B is a schematic cross-sectional view showing a case where the wavelength conversion member 73 is arranged on the light emitting device described in Patent Document 2. The GaN-based semiconductor light emitting element 72 emits blue light. For example, when a resin including a phosphor that absorbs blue light and emits yellow light is used as the wavelength conversion member 73, the phosphor of the wavelength conversion member 73 is emitted from the semiconductor light emitting element 72 in the region immediately above the semiconductor light emitting element 72. The yellow light that has been absorbed and wavelength-converted and the blue light that has not been absorbed by the phosphor are mixed, and white light is emitted.

  However, since the blue light component emitted from the GaN-based semiconductor light emitting device 72 is reduced immediately above the region between the devices 72, the emitted light is yellowish. For this reason, uneven color occurs in the emitted light.

JP 2014-42074 A JP 2009-267423 A

  An object of the present invention is to provide a semiconductor light emitting device with high light emission quality.

  Another object of the present invention is to provide a vehicular lamp with high emission quality.

  Furthermore, it is providing the manufacturing method of a semiconductor light-emitting device with high luminous quality.

  According to one aspect of the present invention, a plurality of semiconductor light emitting elements disposed on a substrate and a region between the plurality of semiconductor light emitting elements are disposed above a center of each of the plurality of semiconductor light emitting elements. There is provided a semiconductor light emitting device having a light guide member that is not disposed, a protective layer disposed above the plurality of semiconductor light emitting elements and above the light guide member.

  Moreover, the vehicle lamp which has the said semiconductor light-emitting device and the lens arrange | positioned on the optical path of the light radiate | emitted from the said semiconductor light-emitting device is provided.

  (A) forming a plurality of semiconductor light emitting elements on the substrate; and (b) using a resist material above the region between the plurality of semiconductor light emitting elements, each of the plurality of semiconductor light emitting elements. Forming a light guide member that is not disposed above the center of the semiconductor light emitting device; and (c) forming a protective layer above the plurality of semiconductor light emitting elements and above the light guide member. A manufacturing method is provided.

  According to the present invention, a semiconductor light emitting device with high emission quality can be provided.

  In addition, a vehicular lamp with high emission quality can be provided.

  Furthermore, it is possible to provide a method for manufacturing a semiconductor light emitting device with high emission quality.

1A and 1B are a plan view and a cross-sectional view, respectively, showing an outline of a semiconductor light emitting device according to an embodiment. FIG. 2 is a schematic plan view showing another aspect of the semiconductor light emitting device according to the embodiment. 3A to 3C are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. 3D to 3F are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. 3G to 3I are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. 3J to 3L are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. 3M to 3O are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. 3P and 3Q are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment. FIG. 3R is a schematic cross-sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the embodiment. 4A and 4B are schematic cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to a modification. FIG. 5 is a schematic diagram illustrating a vehicular lamp according to an embodiment. 6A and 6B are schematic plan views showing a light guide member 12 according to a modification. FIG. 7A is a schematic cross-sectional view showing a light emitting module described in Patent Document 1, and FIG. 7B is a schematic cross section showing a case where a wavelength conversion member 73 is arranged on a light emitting device described in Patent Document 2. FIG.

  1A and 1B are a plan view and a cross-sectional view, respectively, showing an outline of a semiconductor light emitting device according to an embodiment.

  The semiconductor light emitting device according to the embodiment includes, for example, a support substrate 10 that is a Si substrate, a plurality of semiconductor light emitting elements 11 disposed on the support substrate 10, and a light guide disposed above a region between the semiconductor light emitting elements 11. A member 12 is provided. Moreover, it has the protective layer 13 arrange | positioned above the semiconductor light-emitting element 11 and the light guide member 12. FIG.

  The semiconductor light emitting element 11 is, for example, an LED (light emitting diode) element, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer formed of, for example, a nitride semiconductor. In addition, an n-side electrode electrically connected to the n-type semiconductor layer and a p-side electrode electrically connected to the p-type semiconductor layer are included.

  The planar shape of the semiconductor light emitting element 11 is a square having sides of 100 μm to 6 mm, for example, 300 μm. The semiconductor light emitting elements 11 are regularly arranged in the X-axis direction and the Y-axis direction, for example, with a constant interval of 40 μm to 100 μm. 1A and 1B show an example in which the semiconductor light emitting elements 11 are arranged in a matrix of 3 rows and 3 columns at equal pitches in both the X axis direction and the Y axis direction.

  Each semiconductor light emitting element 11 is supplied with a driving signal (electric power) supplied from an external driving circuit, and emits blue light from the light emitting surface 11a. The driving of each semiconductor light emitting element 11 (control of light emission and non-light emission state) is performed independently.

  The light guide member 12 is a transparent structure made of a resist material having a high light transmittance, for example. In the embodiment, the light guide member 12 is formed on the support substrate 10 from a position lower than the light emitting surface 11 a of the semiconductor light emitting element 11, specifically, in contact with the support substrate 10. Further, it is formed up to a position higher than the light emitting surface 11 a of each semiconductor light emitting element 11. The light guide member 12 rises in a wall shape upward (Z-axis positive direction) from the support substrate 10.

Furthermore, the light guide member 12 is formed such that the width W ₁ (for example, 100 μm) of the lattice portion is wider than the width W ₂ (for example, 60 μm) of the region between the semiconductor light emitting elements 11. For this reason, the light guide member 12 is disposed not only above the region between the semiconductor light emitting elements 11 but also above the outer peripheral portion of each semiconductor light emitting element 11. In the embodiment, the light guide member 12 is formed on the outer peripheral portion of the semiconductor light emitting element 11 so as to be in contact with the semiconductor light emitting element 11.

The light guide member 12 has, for example, a lattice shape extending in the X-axis direction and the Y-axis direction in plan view, and the lattice portion is disposed between the semiconductor light emitting elements 11. Further, the outer frame portion of the light guide member 12 is arranged along the outer periphery so as to surround the entire semiconductor light emitting element 11 (LED chip) arranged in 3 rows and 3 columns. The light guide member 12 is not disposed above the central portion of each semiconductor light emitting element 11, and thus above the center of each semiconductor light emitting element 11 (intersection of square diagonal lines). (Open region 12a is arranged.)
For example, the light guide member 12 has a light transmittance of 90% or more when light is incident perpendicularly from the X axis direction to a lattice portion (width W ₁ portion) extending in the Y axis direction, for example, 95. % Or more of a resist material having a high transmittance.

A protective layer 13 is disposed so as to cover each semiconductor light emitting element 11 and the light guide member 12. The protective layer 13 is formed of, for example, a translucent resin member, for example, an epoxy resin, and has a function of protecting the semiconductor light emitting element 11 and the light guide member 12. Silicone resin, urethane resin, hybrid resin (such as a resin in which an epoxy resin and a silicone resin are mixed), or the like may be used. Further, in the examples, for example, a YAG: Ce phosphor in which Ce (cerium) is introduced as an activator into YAG (yttrium, aluminum, garnet, Y ₃ Al ₅ O ₁₂ ) is contained in an epoxy resin (protective layer 13). Are distributed. The YAG: Ce phosphor absorbs blue light emitted from the semiconductor light emitting element 11 and emits yellow light (excitation light). For this reason, the protective layer 13 also functions as a wavelength converter layer.

  In the semiconductor light emitting device according to the embodiment, yellow light that is emitted from the light emitting surface 11a of the semiconductor light emitting element 11, is absorbed by the phosphor of the protective layer 13, and is wavelength-converted, and blue light that is not absorbed by the phosphor. Is emitted from the upper surface of the light emitting device and visually recognized as white light.

  In the embodiment, the refractive index of the protective layer 13 is larger than the refractive index of the light guide member 12. The refractive index of the light guide member 12 is, for example, about 1.59 for blue light.

  In the semiconductor light emitting device according to the embodiment, the blue light emitted from the light emitting surface 11 a of the semiconductor light emitting element 11 enters the protective layer 13 or the light guide member 12.

  Part of the light incident on the protective layer 13 passes through the protective layer 13 and is emitted above the light emitting device. The other part propagates through the protective layer 13 and enters the light guide member 12.

  Since the refractive index of the protective layer 13 is larger than the refractive index of the light guide member 12, a part of the light propagating in the lateral direction in the protective layer 13 in the opening region 12 a and entering the light guide member 12 is protected. Total reflection is performed at the interface between the layer 13 and the light guide member 12. Therefore, in the semiconductor light emitting device according to the embodiment, for example, light propagating to the arrangement position of the adjacent semiconductor light emitting elements 11 is reduced, and crosstalk between the semiconductor light emitting elements 11 is suppressed.

  In addition, a part of the light incident on the light guide member 12 without being reflected at the interface with the protective layer 13 and the light emitted from the semiconductor light emitting element 11 and directly incident on the light guide member 12 without passing through the protective layer 13. A part of the reflected light is reflected at the interface between the protective layer 13 and the outside air, propagates in the light guide member 12, passes through the protective layer 13 formed on the light guide member 12, and passes above the light emitting device. Emitted. For this reason, in the semiconductor light emitting device according to the embodiment, the light emitted from the region between the semiconductor light emitting elements 11 (non-light emitting region) increases, and the dark grid between the semiconductor light emitting elements 11 is suppressed.

  Furthermore, in the semiconductor light emitting device according to the example, since the light guide member 12 is formed on the outer peripheral portion of each semiconductor light emitting element 11, blue light enters the light guide member 12 without passing through the protective layer 13. Since the blue light that enters and propagates in the region between the semiconductor light emitting elements 11 increases, yellowing of the light emitted from the region between the semiconductor light emitting elements 11 is suppressed, and uneven color of the light emitted from the light emitting device is suppressed. The

  As described above, the semiconductor light emitting device according to the embodiment is a light emitting device with high emission quality in which crosstalk, dark grid, and color unevenness are suppressed.

  In the embodiment, the refractive index of the protective layer 13 is larger than the refractive index of the light guide member 12, but the refractive index of the protective layer 13 may be smaller than the refractive index of the light guide member 12. In this case, the light incident on the light guide member 12 from the protective layer 13 is not totally reflected, but after entering the light guide member 12, a part of the light incident on the protective layer 13 again is totally reflected, and further the protective layer 13 Since some of the light transmitted through the light is reflected by the difference in refractive index with air, crosstalk can be suppressed. Dark grid and color unevenness are suppressed for the same reason as when the refractive index of the protective layer 13 is larger than the refractive index of the light guide member 12.

  FIG. 2 is a schematic plan view showing another aspect of the semiconductor light emitting device according to the embodiment. 1A and 1B show an example in which only one support substrate 10 (LED chip) on which the semiconductor light emitting elements 11 are arranged in a matrix is shown. However, as shown in FIG. 2, a plurality of LED chips are provided. It is good also as a structure.

  In both the example shown in FIGS. 1A and 1B and the example shown in FIG. 2, the support substrate 10 is placed on, for example, a mounting substrate (mount substrate).

  With reference to FIGS. 3A to 3R, a method of manufacturing a semiconductor light emitting device according to an embodiment will be described. In addition, illustration was typically performed about the cross-sectional position along the 3R-3R line of FIG.

  Refer to FIG. 3A. For example, a sapphire substrate 21 is prepared as a growth substrate, and a device structure layer made of a nitride-based semiconductor is formed on the sapphire substrate 21 using a metal organic chemical vapor deposition (MOCVD) method. .

  Specifically, the sapphire substrate 21 is put into an MOCVD apparatus and thermal cleaning is performed. After growing the GaN buffer layer 22 and the undoped GaN layer 23 in this order, an n-type GaN layer 24 doped with Si is grown.

  A light emitting layer (active layer) 25 is grown on the n-type GaN layer 24. As the light emitting layer 25, for example, a multiple quantum well structure in which an InGaN layer is a well layer and a GaN layer is a barrier layer can be formed. A GaN layer 26 doped with Mg or the like is grown on the light emitting layer 25.

  In the embodiment, the sapphire substrate 21 is used, but an SiC substrate, a ZnO substrate, or the like may be used.

  The semiconductor layers 22 to 26 (semiconductor epiwafers) are taken out from the MOCVD apparatus and moved to the element forming process.

  First, the GaN layer 26 is activated. Using a heat treatment furnace, heat treatment is performed in a vacuum or in an inert gas atmosphere at a temperature of 400 ° C. or higher to form the p-type GaN layer 26. In this specification, a semiconductor stacked structure from the GaN buffer layer 22 to the p-type GaN layer 26 is referred to as a semiconductor layer 27.

  Refer to FIG. 3B. A p-side electrode 28p having light reflectivity is formed on the semiconductor layer 27 (p-type GaN layer 26). For example, an Ag layer can be deposited by RF (radio frequency) sputtering, and patterning can be performed by photolithography.

  Refer to FIG. 3C. Junction cutting is performed on the region where the n-side electrode is formed and the outer peripheral region of the LED element. Specifically, a photolithography method is used to form a resist mask having a region serving as an n-side electrode, and the p-type GaN layer 26 and the light emitting layer 25 are formed by reactive ion etching (RIE). Etching is performed to a depth where the n-type GaN layer 24 is exposed electrically.

Reference is made to FIG. 3D. An SiO ₂ film (insulating film) 29 is formed using RF sputtering or the like. The film forming temperature (substrate temperature) is, for example, 200 ° C. The region where the junction cut has been performed is also covered with the SiO ₂ film 29.

Refer to FIG. 3E. A part of the SiO ₂ film (insulating film) 29 is opened. A resist mask is formed by photolithography, and openings 29n and 29p are formed in the SiO ₂ film 29 by RIE. The opening 29n is an opening that exposes the n-type GaN layer 24, and the opening 29p is an opening that exposes the p-side electrode 28p.

  Reference is made to FIG. 3F. For example, a Ti / Pt / Au layer is deposited by RF sputtering and patterned by photolithography to form an n-side electrode 28n on the n-type GaN layer 24 exposed at the bottom of the opening 29n.

In addition, bonding layers 30n and 30p are formed in a region including the SiO ₂ film 29 through a film formation by RF sputtering and a patterning process using a photolithography method, for example. For the bonding layers 30n and 30p, for example, a metal including AuSn that can be fusion bonded is used. The bonding layer 30n is a connection electrode layer electrically connected to the n-side electrode 28n, and the bonding layer 30p is a connection electrode layer electrically connected to the p-side electrode 28p.

  Reference is made to FIG. 3G. A resist mask is formed by photolithography, and element isolation is performed by RIE.

Refer to FIG. 3H. A Si substrate (support substrate) 41 having an SiO ₂ film (thermal oxide film) 42 formed as an insulating film on the surface is prepared, and a lower wiring 43 having a predetermined pattern is formed on one surface thereof.

Refer to FIG. 3I. An SiO ₂ film (insulating film) 44 covering the lower wiring 43 is formed. For example, the substrate temperature can be set to 200 ° C. and the RF sputtering method can be used.

Reference is made to FIG. 3J. Using a photolithography method, a part of the SiO ₂ film 44 at a position where the lower wiring 43 is not formed is opened, and an opening 44 n exposing the Si substrate 41 is formed. In addition, another part of the SiO ₂ film 44 is opened, and an opening 44 p that exposes the lower wiring 43 is formed.

Refer to FIG. 3K. In a region including the SiO ₂ film 44, two types of electrically separated upper wirings (joining layers) 45n and 45p are formed by using, for example, a photolithography method. The upper wiring 45n is also formed in the opening 44n. The upper wiring 45p is also formed in the opening 44p.

  As a material constituting the upper wirings 45n and 45p, for example, a metal containing AuSn or the like capable of fusion bonding can be used.

  Refer to FIG. 3L. The Si substrate 41 shown in FIG. 3K and the sapphire substrate 21 shown in FIG. 3G are bonded (wafer bonding). Joining is performed at 200 ° C. in a vacuum, for example. Positioning is performed so that the upper wiring (bonding layer) 45n and the bonding layer 30n, and the upper wiring (bonding layer) 45p and the bonding layer 30p are bonded together, and weighting is performed while heating.

  Refer to FIG. 3M. For example, the sapphire substrate 21 is peeled off by laser lift-off. As an example, UV excimer laser light is irradiated from the back side of the sapphire substrate 21, the GaN buffer layer 22 is thermally decomposed, and the sapphire substrate 21 is peeled off. Ga generated by laser lift-off is removed with hot water or the like, and then surface treatment is performed. As a result, the n-type GaN layer 24 is exposed.

  Refer to FIG. 3N. In order to improve the light extraction efficiency, the surface of the exposed n-type GaN layer 24 is subjected to uneven processing derived from the crystal structure by immersing in an alkaline solution such as a KOH solution to form a light extraction structure or a microcone structure. .

Up to this step, on the supporting substrate (in the example shown in this figure, a plurality of Si substrates 41 on which the SiO ₂ film 42, the lower wiring 43, the SiO ₂ film 44, and the upper wirings 45n and 45p are formed) LED elements are formed.

Refer to FIG. The back side of the Si substrate 41 is ground, and the SiO ₂ film 42 is removed. Wet etching or dry etching may be used.

  A back electrode 46 is formed on the ground surface of the Si substrate 41. For example, a Ti / Pt / Au layer deposited by RF sputtering can be formed by patterning by lift-off.

Refer to FIG. 3P. A resist material is applied on the surface of the n-type GaN layer 24 (on the light extraction structure or the microcone structure). For example, SU-8 3025 (manufactured by Nippon Kayaku Co., Ltd.), which is a negative permanent resist material, is applied, and as an example, the Si substrate 41 is rotated at 3000 rpm. Thereby, the thickness of SU-8 3025 is about 25 μm. The applied SU-8 3025 also enters the inter-LED element region. In the example shown in this figure, it reaches the upper surface of the SiO ₂ film 44 and fills the inter-element region.

After baking, the patterns are aligned with a mask aligner and exposed at an exposure amount of, for example, 250 mJ / cm ² . After the post-baking, development is performed using, for example, SU-8 developer (manufactured by Nippon Kayaku Co., Ltd.) to produce a lattice pattern. By performing hard baking, a wall shape extends from the position of the SiO ₂ film 44 to a position higher than the light emitting surface of the LED element (in this figure, the surface of the n-type GaN layer 24 (light extraction structure or microcone structure formation position)). A light guide member 47 standing up is formed.

  A negative permanent resist material such as SU-8 3050, SU-8 3035, SU-8 3010, SU-8 3005 (all manufactured by Nippon Kayaku Co., Ltd.) can also be used. When these materials are used, for example, the thickness after rotating at 3000 rpm is about 50 μm, about 35 μm, about 10 μm, and about 6 μm in order. Bake time, exposure time, post-bake time, and the like vary depending on the thickness of the resist material. For example, the thicker the film, the longer the baking and post-baking times and the greater the amount of exposure required.

Refer to FIG. 3Q. Dicing is performed from the back electrode 46 side. For example, blade dicing, laser dicing, wet etching, and dry etching are used to support the substrate (in the example shown in this figure, the SiO ₂ film 42, the lower wiring 43, the SiO ₂ film 44, the upper wirings 45n and 45p, and the back surface. The Si substrate 41) on which the electrode 46 is formed and the light guide member 47 are divided. Thereby, the LED chip which has a some LED element on a support substrate is produced. The light guide member 47 at the divided position becomes an outer frame portion arranged on the outer peripheral portion of the LED chip.

  Refer to FIG. 3R. The light emitting device in the state shown in FIG. 3Q is die-bonded on the package substrate (mounting substrate) 49 using a bonding agent such as AuSn. The back electrode 46 is electrically connected to the wiring of the package substrate 49. Thereafter, the n-side electrode 28n and the p-side electrode 28p are electrically connected to the power supply pads of the package substrate 49 by wire bonding using Au wires.

  The LED element and the light guide member 47 are sealed with a resin and cured to form a sealing resin layer (protective layer) 48 on the LED element and the light guide member 47. The sealing resin layer 48 is mixed with phosphor powder for whitening light emitted from the light emitting device. For example, a YAG: Ce phosphor that emits yellow light is used.

  Various combinations of the emission wavelength of the LED element and the phosphor are possible. A plurality of types of phosphors (for example, a phosphor emitting blue light and a phosphor emitting yellow light, a phosphor emitting red light, a phosphor emitting green light, and a phosphor emitting blue light) can also be mixed.

  Further, the protective layer 48 can also be formed by using a glass binder as a sealant and mixing it with a phosphor, followed by spray coating.

  It is desirable that the resist material forming the light guide member 47 has heat resistance that can withstand a temperature of, for example, 180 ° C. or higher. For example, heat resistance is required when the sealing resin layer 48 is formed on the light guide member 47 and when the light emitting device is used for a long time.

  Through the above steps, for example, the semiconductor light emitting device shown in FIG. 2 is manufactured. According to said method, a semiconductor light-emitting device with high light emission quality can be manufactured.

  With reference to FIG. 4A and FIG. 4B, the manufacturing method of the semiconductor light-emitting device by a modification is demonstrated. The manufacturing method according to the modification is equal to that of the embodiment up to the back electrode 46 formation step (see FIG. 3O). In the embodiment, after that, the light guide member 47 is formed (see FIG. 3P). However, in the modified example, as shown in FIG. 4A, the resist material is not applied and dicing is performed at a predetermined position. Die bonding is performed to arrange the diced chips. At this time, the groove part 50 is formed in the arranged gap position, that is, the dicing position (divided position of the Si substrate 41).

  The depth of the groove 50 is, for example, about 300 μm. If a resist material such as SU-8 3025 is applied in this state, it may be difficult to form the light guide member 47 to a position higher than the light emitting surface of the LED element.

Refer to FIG. 4B. For this reason, in the manufacturing method according to the modification, for example, white resin 51 is poured into the groove portion 50 to fill the groove portion 50. Thereafter, the light guide member 47 is formed as in the embodiment. As a result, the light guide member 47 is provided with a support substrate (in the example shown in the figure, the SiO ₂ film 42, the lower wiring 43, the SiO ₂ film 44, the upper wirings 45n, 45p, and It is formed on the Si substrate 41) on which the back electrode 46 is formed.

  After the light guide member 47 is formed, a sealing resin layer 48 that covers the LED elements and the light guide member 47 is formed as in the embodiment.

  The semiconductor light-emitting device manufactured by the manufacturing method according to the modification has a configuration in which the light guide member 47 is disposed across adjacent LED chips.

  In the semiconductor light emitting device manufactured by the method according to the embodiment and the modification, the light guide member 47 is formed on the support substrate (in contact with the support substrate). For example, a white resin 51 layer (bottom raising member) ) Can be made high so that it does not come into contact with the support substrate. In this case, the light guide member 47 is formed on the white resin 51 layer as in the modification.

  FIG. 5 is a schematic diagram illustrating a vehicular lamp according to an embodiment. The vehicle lamp according to the embodiment is, for example, a vehicle headlamp (headlight), and includes a semiconductor light emitting device (light source) 60 and a lens 61.

  As the semiconductor light emitting device 60, the semiconductor light emitting device according to the embodiment and the modified example (after mounting, see FIGS. 3R and 4B) can be used.

  The lens 61 is a collimating lens as an example. It arrange | positions on the optical path of the light (divergent light) radiate | emitted from the semiconductor light-emitting device 60, and radiate | emits incident light to a vehicle front (this figure Z-axis positive direction) as parallel light.

  Since the vehicular lamp according to the embodiment uses the semiconductor light emitting device according to the embodiment or the modification, the vehicular lamp is a vehicular lamp with high emission quality in which crosstalk, dark grid, and color unevenness are suppressed. For example, it can be used together with a control device for an automotive variable light distribution headlight (ADB) and a variable light distribution headlight system (AFS).

  As mentioned above, although this invention was demonstrated along the Example and the modification, this invention is not limited to these.

  For example, in the embodiment and the like, the light guide member 12 is arranged along the contour line of each semiconductor light emitting element 11 (see FIGS. 1A and 2), but may be arranged in a manner not along the contour line.

  Further, in the embodiments and the like, a lattice-shaped light guide member 12 including a lattice portion and an outer frame portion is used in a manner corresponding to the arrangement form of the semiconductor light emitting element 11 (see FIGS. 1A and 2). The member 12 is not limited to a lattice shape.

  For example, when the light emitting and non-light emitting states of the semiconductor light emitting elements 11 in the column direction (along the Y axis direction) are matched, as shown in FIG. 6A, the light guide member 12 in which the opening region 12a is continuous in the Y axis direction is used. It can be.

  Furthermore, as shown in FIG. 6B, for example, a wall-shaped light guide member 12 extending in the Y-axis direction may be formed between the semiconductor light emitting elements 11 adjacent in the X-axis direction.

  In the examples, the light guide member 12 is formed using SU-8 3025, which is a negative resist material, but a positive resist material may be used.

  Furthermore, in the examples, etc., the protective layer 13 containing a phosphor is used. However, for example, depending on the wavelength of the emitted light required for the semiconductor light emitting device, the protective layer 13 can be used without the phosphor.

  In the embodiments, etc., an LED element is used as the semiconductor light emitting element. However, the present invention is not limited to the LED element, and various semiconductor light emitting elements such as an LD (laser diode) element can be used.

  It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

  The semiconductor light emitting device according to the embodiment or the modification can be used as a light source for various lighting devices, for example, a vehicle lighting device or a general lighting device. As an example, it can be suitably used as a light source for a vehicle headlamp.

DESCRIPTION OF SYMBOLS 10 Support substrate 11 Semiconductor light-emitting device 11a Light emission surface 12 Light guide member 12a Opening area 13 Protective layer 21 Sapphire substrate (growth substrate)
22 GaN buffer layer 23 undoped GaN layer 24 n-type GaN layer 25 light-emitting layer 26 p-type GaN layer 27 semiconductor layer 28n n-side electrode 28p p-side electrode 29 SiO ₂ film 29n, 29p opening 30n, 30p junction layer 41 Si substrate ( Support substrate)
42 SiO ₂ film 43 Lower wiring 44 SiO ₂ films 44n, 44p Openings 45n, 45p Upper wiring (bonding layer)
46 Back electrode 47 Light guide member 48 Sealing resin layer 49 Package substrate 50 Groove 51 White resin 60 Semiconductor light emitting device 61 Lens 71 Mounting substrate 72 Semiconductor light emitting element 73 Wavelength converting member 74 Reflecting member 75 Insulating substrate

Claims (14)

A plurality of semiconductor light emitting devices disposed on a substrate;
A light guide member disposed above a region between the plurality of semiconductor light emitting elements and not disposed above a center of each of the plurality of semiconductor light emitting elements;
The semiconductor light-emitting device which has the protective layer arrange | positioned above the said some semiconductor light-emitting element and the said light guide member.   The semiconductor light-emitting device according to claim 1, wherein the protective layer includes a phosphor that absorbs light emitted from the plurality of semiconductor light-emitting elements and emits excitation light.   3. The semiconductor light emitting device according to claim 1, wherein the light guide member is disposed from a position lower than a light emitting surface of the plurality of semiconductor light emitting elements to a position higher than a light emitting surface of the plurality of semiconductor light emitting elements.   The semiconductor light emitting device according to claim 3, wherein the light guide member rises upward from the substrate.   5. The semiconductor light emitting device according to claim 1, wherein the light guide member is also disposed above an outer peripheral portion of the plurality of semiconductor light emitting elements.   The light guide member is formed in a lattice shape corresponding to an arrangement mode of the plurality of semiconductor light emitting elements, and an opening region of the light guide member is disposed above the center of each of the plurality of semiconductor light emitting elements. The semiconductor light-emitting device of any one of Claims 1-5.   The semiconductor light emitting device according to claim 1, wherein the light guide member is formed of a resist material.   The semiconductor light emitting device according to claim 7, wherein the resist material has heat resistance capable of withstanding a temperature of 180 ° C. or higher. A semiconductor light emitting device according to any one of claims 1 to 8,
A vehicular lamp having a lens disposed on an optical path of light emitted from the semiconductor light emitting device. (A) forming a plurality of semiconductor light emitting elements on a substrate;
(B) forming a light guide member that is not disposed above the center of each of the plurality of semiconductor light emitting elements, using a resist material above the region between the plurality of semiconductor light emitting elements;
(C) A method of manufacturing a semiconductor light emitting device, comprising: forming a protective layer above the plurality of semiconductor light emitting elements and above the light guide member.   The said light guide member is formed in the said process (b) from the position lower than the light-projection surface of these semiconductor light-emitting devices to the position higher than the light-projection surface of these semiconductor light-emitting devices. A method for manufacturing a semiconductor light emitting device.   The method of manufacturing a semiconductor light emitting device according to claim 11, wherein in the step (b), the light guide member rising upward from the substrate is formed. Furthermore, between the step (b) and the step (c),
(D1) The manufacturing method of the semiconductor light-emitting device according to any one of claims 10 to 12, further comprising a step of dividing the substrate and the light guide member. Furthermore, between the step (a) and the step (b),
(D2) dividing the substrate;
(D3) including a step of arranging a bottom-up member at the division position of the substrate,
The method of manufacturing a semiconductor light emitting device according to claim 10, wherein in the step (b), the light guide member is formed on the bottom raising member.

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