JP2017082290A - Plating treatment apparatus and plating treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plating treatment apparatus capable of preventing a plating solution from reducing a period of time used for plating treatment.SOLUTION: In a plating treatment apparatus (1), after a plating solution exhibiting a predetermined plating performance in a predetermined concentration range and having an initial temperature controlled at less than a predetermined plating treatment temperature and an initial concentration controlled so that the concentration of the plating solution when reached at the predetermined plating treatment temperature is equal to or more than the lower limit of the predetermined concentration range and is equal to or less than the median of the predetermined concentration range is supplied to a substrate (W1) by a plating solution supply part (53), the plating solution supplied to the substrate (W1) is heated at the predetermined plating treatment temperature by a plating solution heating part (63).SELECTED DRAWING: Figure 3

Description

  The present invention relates to a plating apparatus and a plating method. The present invention also relates to a storage medium on which a program for executing the plating method of the present invention is recorded.

  The plating solution exhibits a predetermined plating performance in a predetermined concentration range. When constructing the plating solution, the concentration of the plating solution is adjusted from the beginning to a predetermined concentration range in which predetermined plating performance is exhibited. And the density | concentration of a plating solution is managed by the predetermined | prescribed density | concentration range through which predetermined plating performance is exhibited throughout a plating process. Patent Document 1 describes a plating solution concentration management method and a concentration management system.

  Patent Document 2 describes a batch type plating apparatus. In a batch type plating apparatus, a plating solution adjusted to a predetermined concentration range in which a predetermined plating performance is exhibited is built in a plating tank, and a plurality of substrates are simultaneously plated in the plating tank. . When the plating component in the plating solution is consumed by the plating process and the concentration of the plating solution is lowered, the plating component is replenished and the plating process is repeatedly performed in the plating treatment tank. In batch type plating equipment, although water evaporates from the plating solution in the plating tank, the amount of plating solution in the plating treatment tank is large, so the consumption of plating components is greater than the increase in plating solution concentration due to evaporation of moisture. The decrease in the concentration of the plating solution due to the above is more remarkable, and the concentration of the plating solution in the plating treatment tank tends to decrease.

  Patent Document 3 describes a single-wafer plating apparatus. In the single-wafer plating apparatus, a plating solution adjusted to a predetermined concentration range in which a predetermined plating performance is exhibited is supplied to a single substrate to perform a plating process on the single substrate. The amount of the plating solution supplied to one substrate is much smaller than the amount of the plating solution in the plating tank in the batch type plating apparatus. For this reason, the concentration increase of the plating solution due to evaporation of moisture is more conspicuous than the decrease in concentration of the plating solution due to consumption of the plating component, and the concentration of the plating solution supplied to one substrate tends to increase. is there.

JP 2003-253453 A JP 2013-104118 A JP 2013-112845 A

  In a single wafer plating apparatus, an initial temperature adjusted to be lower than a predetermined plating processing temperature and an initial concentration adjusted to a predetermined concentration range in which predetermined plating performance is exerted on one substrate. After supplying the plating solution, the supplied plating solution is heated to a predetermined plating temperature, and when plating is performed with the plating solution heated to the predetermined plating temperature, until the plating solution reaches the predetermined plating temperature. During this time, the plating components in the plating solution are hardly consumed, while the water in the plating solution evaporates, so that the concentration of the plating solution increases. After the plating solution reaches a predetermined plating temperature, the plating components in the plating solution are consumed, but since the heating of the plating solution is continued, the concentration of the plating solution increases. In other words, the increase in plating solution concentration due to evaporation of water in the plating solution is greater than the decrease in plating solution concentration due to the consumption of plating components in the plating solution. Even after this, the concentration of the plating solution increases. The plating solution can be used up to the upper limit of the predetermined concentration range, but since the concentration of the plating solution has already increased when the predetermined plating temperature is reached, the concentration of the plating solution is within the predetermined concentration range. The time until the upper limit is reached, that is, the time during which the plating solution can be used for the plating process is shortened.

  Accordingly, the present invention provides a plating apparatus and a plating method that can prevent a reduction in time during which the plating solution can be used for the plating process, and a storage medium in which a program for executing the plating process method is recorded. Objective.

The present invention includes the following inventions.
(1) A plating apparatus comprising: a plating processing unit that performs plating processing on a substrate at a predetermined plating processing temperature; and a control unit that controls the operation of the plating processing unit.
The plating section is
A plating solution supply unit that supplies a plating solution that exhibits a predetermined plating performance in a predetermined concentration range to the substrate;
A plating solution heating section for heating the plating solution supplied to the substrate to the predetermined plating treatment temperature;
With
The plating solution supplied to the substrate from the plating solution supply unit is heated to the predetermined plating treatment temperature by the initial temperature adjusted to be lower than the predetermined plating treatment temperature and the plating solution heating unit. The initial concentration adjusted so that the concentration of the plating solution at the time of reaching the lower limit value of the predetermined concentration range and the median value of the predetermined concentration range or less,
After the control unit is supplied with a predetermined amount of the plating solution once to the substrate, the supplied plating solution is heated to the predetermined plating processing temperature and heated to the predetermined plating processing temperature. The said plating processing apparatus which controls the said plating solution supply part and the said plating solution heating part so that the said plating process may be performed with the said plated solution.
(2) The plating according to (1), wherein the initial concentration is adjusted so that the concentration of the plating solution at the time when the predetermined plating treatment temperature is reached is near a lower limit value of the predetermined concentration range. Processing equipment.
(3) The plating apparatus according to (1) or (2), wherein the initial concentration is adjusted to be less than a lower limit value of the predetermined concentration range.
(4) The plating processing unit includes a top plate provided above the substrate,
When the plating solution supplied to the substrate is heated by the plating solution heating unit, water vapor generated from the plating solution supplied to the substrate is interposed between the substrate and the top plate. The plating apparatus according to any one of (1) to (3), wherein a staying space is formed.
(5) A plating method for performing plating at a predetermined plating temperature on a substrate,
A plating solution that exhibits a predetermined plating performance in a predetermined concentration range with respect to the substrate, an initial temperature adjusted to be lower than the predetermined plating temperature, and a time when the predetermined plating temperature is reached. A plating solution supply step of supplying the plating solution having an initial concentration adjusted such that the concentration of the plating solution is not less than the lower limit value of the predetermined concentration range and not more than the median value of the predetermined concentration range;
A plating solution heating step for heating the plating solution supplied to the substrate to the predetermined plating temperature;
Including
In the plating solution supply step, a predetermined amount of the plating solution is supplied once to the substrate,
In the plating solution heating step, the plating solution supplied in the plating solution supply step is heated to the predetermined plating treatment temperature, and the plating treatment is performed with the plating solution heated to the predetermined plating treatment temperature. The plating method.
(6) The plating according to (5), wherein the initial concentration is adjusted so that the concentration of the plating solution at the time when the predetermined plating temperature is reached is near the lower limit value of the predetermined concentration range. Processing method.
(7) The plating method according to (5) or (6), wherein the initial concentration is adjusted to be less than a lower limit value of the predetermined concentration range.
(8) In the plating solution heating step, a space in which water vapor generated from the plating solution supplied to the substrate stays is formed between the substrate and a top plate provided above the substrate. The plating method according to any one of (5) to (7), wherein the plating method is performed in a heated state.
(9) When executed by a computer for controlling the operation of the plating apparatus, the computer controls the plating apparatus to execute the plating method according to any one of (5) to (8) A storage medium on which a program to be recorded is recorded.

  ADVANTAGE OF THE INVENTION According to this invention, the storage medium with which the program which performs the metal-plating processing apparatus, the metal-plating processing method, and this metal-plating processing method which can prevent shortening of the metal-plating processing time of a plating solution was recorded is provided.

FIG. 1 is a schematic diagram showing the configuration of a plating apparatus according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing the configuration of the plating unit provided in the plating apparatus shown in FIG. FIG. 3 is a schematic cross-sectional view illustrating a configuration of a plating processing unit included in the plating processing unit illustrated in FIG. 2.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Configuration of plating processing equipment>
With reference to FIG. 1, the structure of the plating apparatus which concerns on one Embodiment of this invention is demonstrated. FIG. 1 is a schematic diagram showing the configuration of a plating apparatus according to an embodiment of the present invention.

  As shown in FIG. 1, a plating apparatus 1 according to an embodiment of the present invention includes a plating unit 2 and a control unit 3 that controls the operation of the plating unit 2.

  The plating unit 2 performs various processes on the substrate. Various processes performed by the plating unit 2 will be described later.

  The control unit 3 is a computer, for example, and includes an operation control unit and a storage unit. The operation control unit is configured by, for example, a CPU (Central Processing Unit), and controls the operation of the plating processing unit 2 by reading and executing a program stored in the storage unit. The storage unit is configured by a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, for example, and stores a program for controlling various processes executed in the plating unit 2. The program may be recorded on a computer-readable storage medium or may be installed from the storage medium into the storage unit. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card. For example, when executed by a computer for controlling the operation of the plating apparatus 1, the recording medium stores a program that causes the computer to control the plating apparatus 1 to execute a plating method described later.

<Configuration of plating unit>
With reference to FIG. 2, the structure of the plating unit 2 will be described. FIG. 2 is a schematic plan view showing the configuration of the plating unit 2. The dotted line in FIG. 2 represents the substrate.

  The plating processing unit 2 includes a carry-in / out station 21 and a treatment station 22 provided adjacent to the carry-in / out station 21.

  The carry-in / out station 21 includes a placement unit 211 and a transport unit 212 provided adjacent to the placement unit 211.

  A plurality of transport containers (hereinafter referred to as “carriers C”) for storing a plurality of substrates in a horizontal state are placed on the placement unit 211.

  The transport unit 212 includes a transport mechanism 213 and a delivery unit 214. The transport mechanism 213 includes a holding mechanism that holds the substrate, and is configured to be able to move in the horizontal direction and the vertical direction and turn around the vertical axis.

  The processing station 22 includes a plating processing unit 5. In the present embodiment, the number of the plating processing units 5 included in the processing station 22 is two or more, but may be one. The plating processing units 5 are arranged on both sides of a conveyance path 221 extending in a predetermined direction.

  A transport mechanism 222 is provided in the transport path 221. The transport mechanism 222 includes a holding mechanism that holds the substrate, and is configured to be able to move in the horizontal direction and the vertical direction and turn around the vertical axis.

  Hereinafter, the substrate before being carried into the plating processing unit 5 is referred to as “substrate W0”, and the substrate after being carried into the plating processing unit 5 and before being carried out from the plating processing unit 5 is referred to as “substrate”. It is referred to as “W1”, and the substrate after being unloaded from the plating processing unit 5 is referred to as “substrate W2”.

  In the plating unit 2, the transport mechanism 213 of the carry-in / out station 21 transports the substrates W 0 and W 2 between the carrier C and the delivery unit 214. Specifically, the transport mechanism 213 takes out the substrate W0 from the carrier C placed on the placement unit 211, and places the removed substrate W0 on the delivery unit 214. The transport mechanism 213 takes out the substrate W2 placed on the delivery unit 214 by the transport mechanism 222 of the processing station 22 and stores it in the carrier C of the placement unit 211.

  In the plating unit 2, the transport mechanism 222 of the processing station 22 transports the substrates W 0 and W 2 between the delivery unit 214 and the plating unit 5 and between the plating unit 5 and the delivery unit 214. Specifically, the transport mechanism 222 takes out the substrate W0 placed on the delivery unit 214 and carries the taken-out substrate W0 into the plating processing unit 5. Further, the transport mechanism 222 takes out the substrate W <b> 2 from the plating processing unit 5 and places the taken-out substrate W <b> 2 on the delivery unit 214.

<Configuration of plating processing section>
With reference to FIG. 3, the structure of the plating process part 5 is demonstrated. FIG. 3 is a schematic cross-sectional view showing the configuration of the plating processing unit 5.

  The plating unit 5 performs a plating process on the substrate W1 at a predetermined plating process temperature. The plating process performed by the plating unit 5 is an electroless plating process. The board | substrate process which the plating process part 5 performs is not specifically limited as long as a plating process is included. Therefore, the substrate processing performed by the plating processing unit 5 may include substrate processing other than plating processing. In the present embodiment, the substrate processing performed by the plating processing unit 5 includes plating processing and pre-processing performed before the plating processing.

  The plating processing unit 5 includes a chamber 51, and performs substrate processing including plating processing in the chamber 51.

  The plating processing unit 5 includes a substrate holding unit 52 that holds the substrate W1. The substrate holding part 52 is provided on the rotating shaft 521 extending in the vertical direction in the chamber 51, the turntable 522 attached to the upper end of the rotating shaft 521, and the outer peripheral portion of the upper surface of the turntable 522. A chuck 523 that supports the outer edge portion and a drive unit 524 that rotationally drives the rotary shaft 521 are provided.

  The substrate W1 is supported by the chuck 523 and held horizontally on the turntable 522 in a state of being slightly separated from the upper surface of the turntable 522. In this embodiment, the method of holding the substrate W1 by the substrate holding unit 52 is a so-called mechanical chuck type in which the outer edge portion of the substrate W1 is held by a movable chuck 523, but a so-called vacuum that vacuum-sucks the back surface of the substrate W1. It may be a chuck type.

  The base end portion of the rotating shaft 521 is rotatably supported by the driving unit 524, and the distal end portion of the rotating shaft 521 supports the turntable 522 horizontally. When the rotating shaft 521 rotates, the turntable 522 attached to the upper end portion of the rotating shaft 521 rotates, and thereby the substrate W1 held by the turntable 522 while being supported by the chuck 523 rotates. The control unit 3 controls the drive unit 524 to control the rotation timing, rotation speed, rotation time, and the like of the substrate W1.

  The plating processing unit 5 includes a plating solution supply unit 53 that supplies the plating solution M1 to the substrate W1 held by the substrate holding unit 52. The plating solution supply unit 53 includes a nozzle 531 that discharges the plating solution M1 to the substrate W1 held by the substrate holding unit 52, and a plating solution supply source 532 that supplies the plating solution M1 to the nozzle 531. A plating solution M1 is stored in a tank of the plating solution supply source 532, and the nozzle 531 is supplied from the plating solution supply source 532 through a supply line 534 provided with a flow rate regulator such as a valve 533. A plating solution M1 is supplied. The control unit 3 controls the plating solution supply unit 53 to control the supply timing, the supply amount, and the like of the plating solution M1.

  The plating solution M1 is a plating solution for autocatalytic (reduction) electroless plating. The plating solution M1 includes metal ions such as cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, gold (Au) ions, and hypophosphorous acid. And a reducing agent such as dimethylamine borane. In the self-catalytic type (reduction type) electroless plating, metal ions in the plating solution M1 are reduced by electrons released by the oxidation reaction of the reducing agent in the plating solution M1, thereby depositing as metal. A metal film (plating film) is formed. The plating solution M1 may contain an additive or the like. Examples of the metal film (plating film) generated by the plating process using the plating solution M1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, and the like. P in the metal film (plating film) is derived from a reducing agent containing P (for example, hypophosphorous acid), and B in the plating film is derived from a reducing agent containing B (for example, dimethylamine borane).

  The plating solution M1 supplied from the plating solution supply unit 53 (that is, the plating solution M1 stored in the tank of the plating solution supply source 532) is a plating solution that exhibits a predetermined plating performance within a predetermined concentration range. . Whether or not the plating solution M1 exhibits a predetermined plating performance is determined when a predetermined amount of the plating solution M1 is used and an electroless plating process is performed at a predetermined plating processing temperature for a predetermined time. For example, it is determined by whether or not a metal film (plating film) having a thickness of 30 to 100 nm is obtained.

The plating solution M1 contains a plurality of types of components, but in order for the plating solution M1 to exhibit a predetermined plating performance, the concentration of each component needs to be within a predetermined concentration range. That is, for each component contained in the plating solution M1, there is a predetermined concentration range necessary for exhibiting predetermined plating performance. The predetermined concentration range of each component is appropriately determined according to the composition of the plating solution M1. Of all the components contained in the plating solution M1, the concentration of the component having the smallest difference between the upper limit value and the lower limit value of the predetermined concentration range is defined as “the concentration of the plating solution M1”. Therefore, when the component having the smallest difference between the upper limit value and the lower limit value of the predetermined concentration range is a metal ion that forms a metal film (plating film), the concentration of the metal ion is “the concentration of the plating solution M1”, the metal When the predetermined concentration range of ions is “the predetermined concentration range of the plating solution M1” and the component having the smallest difference between the upper limit value and the lower limit value of the predetermined concentration range is the reducing agent, the concentration of the reducing agent is “ The “concentration of the plating solution M1” and the predetermined concentration range of the reducing agent are “the predetermined concentration range of the plating solution M1”. Hereinafter, the predetermined concentration range of the plating solution M1 is expressed as C _L (%) to C _H (%).

  The concentration and temperature of the plating solution M1 supplied from the plating solution supply unit 53 (that is, the plating solution M1 stored in the tank of the plating solution supply source 532) are “initial concentration” and “initial temperature”, respectively. This is distinguished from the concentration and temperature of the plating solution M1 after being supplied from the plating solution supply unit 53 with respect to the substrate W1 held by the substrate holding unit 52.

After the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52, the concentration and temperature of the supplied plating solution M1 change. The concentration of the plating solution M1 changes when the moisture in the plating solution M1 evaporates and / or when the plating component in the plating solution M1 is consumed. The temperature of the plating solution M1 is the same as that of the plating solution M1. It changes by being heated by the plating solution heating unit 63. Specifically, the supplied plating solution M1 is heated by the plating solution heating unit 63 from the time when the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52. Until the time when the predetermined plating temperature is reached, the plating components in the plating solution M1 are hardly consumed, while the water in the plating solution M1 evaporates, so that the concentration of the plating solution M1 increases. After the plating solution M1 reaches a predetermined plating temperature, the plating components in the plating solution M1 are consumed, but since the heating by the plating solution heating unit 63 is continued, the concentration of the plating solution M1 increases. That is, since the increase in the concentration of the plating solution M1 due to the evaporation of the water in the plating solution M1 is larger than the decrease in the concentration of the plating solution M1 due to the consumption of the plating component in the plating solution M1, the temperature of the plating solution M1 is predetermined. Even after reaching the plating temperature, the concentration of the plating solution M1 rises and eventually reaches the upper limit (that is, C _H (%)) of a predetermined concentration range.

  The initial temperature of the plating solution M1 is adjusted to be lower than a predetermined plating temperature. The plating temperature is a temperature at which a plating reaction (a reaction in which metal ions in the plating solution M1 are deposited as a metal by being reduced by electrons released by an oxidation reaction of the reducing agent in the plating solution M1) proceeds. Yes, for example, 60 ° C to 70 ° C. The initial temperature of the plating solution M1 is, for example, 23 to 27 ° C.

The initial concentration of the plating solution M1 is such that the concentration of the plating solution M1 at the time when the predetermined plating treatment temperature is reached is not less than the lower limit value of the predetermined concentration range (that is, C _L (%)) and the median value of the predetermined concentration range ( That is, it is adjusted to be (C _L + C _H ) / 2) or less.

The initial concentration of the plating solution M1 is X (%), and the amount of the plating solution M1 supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52 (the plating solution supply unit 53 is The substrate held in the substrate holding part 52 is defined as Y (mL) after supplying a fixed amount of the plating solution M1 once and not replenishing a new plating solution M1 until the plating process with the plating solution M1 is completed. From the time when the plating solution M1 is supplied from the plating solution supply unit 53 to W1, until the time when the supplied plating solution M1 is heated by the plating solution heating unit 63 and reaches a predetermined plating treatment temperature, Assuming that the amount of water evaporated from the supplied plating solution M1 is Z (mL), the concentration (%) of the plating solution M1 when it reaches a predetermined plating treatment temperature is (X × Y) / (Y−Z). It is represented by Predetermined concentration of the plating solution M1 when you reach plating temperature (%) is, _{C L} or more and _{(C L + C H) /} 2 because it is _{less, C L ≦ (X × Y} ) / (Y-Z ) ≦ (C _L + C _H ) / 2. By transforming this equation, the initial concentration X (%) of the plating solution M1 is expressed as C _L (1−Z / Y) ≦ X ≦ (C _L + C _H ) (1−Z / Y) / 2. The

Since Z / Y is less than 1, C _L (1-Z / Y), which is the lower limit value of the initial concentration (%) of the plating solution M1, is less than C _L.
When Z / Y = 1−2C _L / (C _L + C _H ), (C _L + C _H ) (1−Z / Y) / 2, which is the upper limit value of the initial concentration (%) of the plating solution M1, equal to C _L.
When Z / Y> 1-2C _L / (C _L + C _H ), (C _L + C _H ) (1-Z / Y) / 2, which is the upper limit value of the initial concentration (%) of the plating solution M1, it is less than C _L.
When Z / Y <1-2C _L / (C _L + C _H ), (C _L + C _H ) (1-Z / Y) / 2, which is the upper limit value of the initial concentration (%) of the plating solution M1, _CL exceeded.
Therefore, the lower limit of the initial concentration of the plating M1 (%) is always be less than _{C L,} the upper limit value of the initial concentration of the plating M1 (%) may or may less than _{C L,} equal to _{C L} even to some cases, it may exceed the C _L.

As the concentration of the plating solution M1 at the time when the predetermined plating temperature is reached is closer to the lower limit value (ie, C _L (%)) of the predetermined concentration range, the upper limit value (ie, C _H ( %)), That is, the time during which the plating solution M1 can be used for the plating process becomes longer. From this point, the concentration of the plating solution M1 when the predetermined plating treatment temperature is reached is preferably near the lower limit (that is, C _L (%)) of the predetermined concentration range, and more preferably, the predetermined concentration range. This is the lower limit value of the concentration range (that is, C _L (%)).

Time the concentration of the plating solution M1 at the time of reaching a predetermined plating treatment temperature is higher than the initial concentration, when the initial concentration of the plating solution M1 (%) is equal to or greater than C _L, which has reached a predetermined plating treatment temperature It is difficult to adjust the concentration of the plating solution M1 near the lower limit (that is, C _L (%)) of the predetermined concentration range. Therefore, the initial concentration (%) of the plating solution M1 is preferably less than the lower limit value (that is, C _L (%)) of the predetermined concentration range.

After supplying a predetermined amount of the plating solution M1 once, the plating solution supply unit 53 does not supply a new plating solution M1 until the plating process with the plating solution M1 is completed. The amount of the plating solution M1 supplied once from the plating solution supply unit 53 is preferably 20 to 200 mL, more preferably 30 to 100 mL, when the diameter of the substrate W1 is 300 mm. The plating process for one substrate W1 is performed with a predetermined amount of plating solution M1 supplied from the plating solution supply unit 53 once. That is, the plating process for one substrate W1 starts when the plating solution M1 supplied to the substrate W1 reaches the plating processing temperature, and ends when the plating solution M1 is discharged from the substrate W1. The plating solution M1 is discharged from the substrate W1 before reaching the upper limit value (that is, C _H (%)) of the predetermined concentration range. Since the temperature of the plating solution M1 supplied from the plating supply unit 53 is lower than the predetermined plating temperature, the plating solution supply unit 53 supplies the plating solution to the substrate W1 held by the substrate holding unit 52. When M1 is supplied, the plating process is not started or is very slow even if started. After the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52, the supplied plating solution M1 is heated by the plating solution heating unit 63 to have a predetermined plating processing temperature. When reaching the value, the plating process is started. During the plating process, the temperature of the plating solution M1 is maintained at a predetermined plating process temperature by the plating solution heating unit 63. Thus, the plating process is performed by the plating solution M1 heated to a predetermined plating process temperature.

  A circulation line 537 provided with a pump 535 and a heating unit 536 is connected to the tank of the plating solution supply source 532. The plating solution M1 in the tank is heated to the storage temperature while circulating through the circulation pipe 537. The “storage temperature” is a temperature lower than the temperature (plating treatment temperature) at which the deposition of metal ions by self-reaction in the plating solution M1 proceeds and higher than room temperature. In the present embodiment, the plating solution M1 in the tank is heated to the storage temperature, but the plating solution M1 in the tank may be at room temperature. In the present embodiment, it is possible to prevent the deactivation of the reducing agent in the plating solution M1 in the tank, the evaporation of components, etc., which may occur when the plating solution M1 is heated to the plating treatment temperature in the tank. Thus, the life of the plating solution M1 can be extended.

  In the tank of the plating solution supply source 532, a chemical solution is supplied from a chemical solution supply source 538a for storing a chemical solution L1 containing various components of the plating solution M1 through a supply line 538c provided with a flow rate regulator 538b such as a valve. L1 is supplied. Further, in the tank of the plating solution supply source 532, the dilution solution is supplied from a dilution solution supply source 539a for storing the dilution solution L2 for diluting the chemical solution L1 through a supply line 539c provided with a flow rate regulator 539b such as a valve. Is supplied. The diluent L2 is, for example, pure water. The plating solution M1 is prepared by mixing the chemical solution L1 supplied from the chemical solution supply source 538a and the dilution solution L2 supplied from the dilution solution supply source 539a in the tank. At this time, the flow rate of the chemical solution L1 is adjusted by the flow rate adjuster 538b and the flow rate of the diluent L2 is adjusted by the flow rate adjuster 539b so that the concentration of the plating solution M1 becomes a predetermined concentration.

  In the present embodiment, one chemical liquid L1 containing all components in the plating solution M1 is used, but two or more chemical solutions containing some components in the plating solution M1 may be used. . In addition, the component contained in each chemical | medical solution is adjusted so that two or more chemical | medical solutions may contain all the components in the plating solution M1 as a whole. When two or more chemical solutions containing a part of the components in the plating solution M1 are used, two or more chemical solution supply sources for storing each chemical solution are provided, and the tank of the plating solution supply source 532 includes 2 Each chemical solution is supplied from two or more chemical solution supply sources through a supply pipe line provided with a flow rate regulator such as a valve. Then, each chemical solution supplied from two or more chemical solution supply sources and the diluent L2 supplied from the diluent supply source 539a are mixed in the tank, whereby the plating solution M1 is prepared. At this time, the flow rate of each chemical solution is adjusted by the flow rate regulator so that the concentration of the plating solution M1 becomes a predetermined concentration, and the flow rate of the diluent L2 is adjusted by the flow rate regulator 539b.

  The tank of the plating solution supply source 532 may be provided with a deaeration unit (not shown) that removes dissolved oxygen and dissolved hydrogen in the plating solution M1. The deaeration unit supplies, for example, an inert gas such as nitrogen into the tank, dissolves the inert gas such as nitrogen in the plating solution M1, and removes oxygen, hydrogen, etc. already dissolved in the plating solution M1. Other gases can be discharged to the outside of the plating solution M1. Gases such as oxygen and hydrogen discharged from the plating solution M1 can be discharged from the tank by an exhaust unit (not shown). A filter (not shown) may be interposed in the circulation conduit 537. By providing a filter in the circulation pipe 537, various impurities contained in the plating solution M1 can be removed. The circulation pipe 537 may be provided with a monitor unit (not shown) for monitoring the characteristics of the plating solution M1. Examples of the monitor unit include a temperature monitor unit that monitors the temperature of the plating solution M1, a pH monitor unit that monitors the pH of the plating solution M1, and the like.

  The plating unit 5 includes a nozzle moving mechanism 54 that drives the nozzle 531. The nozzle moving mechanism 54 includes an arm 541, a moving body 542 with a built-in driving mechanism that can move along the arm 541, and a turning lift mechanism 543 that turns and lifts the arm 541. The nozzle 531 is attached to the moving body 542. The nozzle moving mechanism 54 can move the nozzle 531 between a position above the center of the substrate W1 held by the substrate holding unit 52 and a position above the periphery of the substrate W1, and further in plan view. Can be moved to a standby position outside the cup 57 described later. The control unit 3 controls the nozzle moving mechanism 54 to control the movement timing of the nozzle 531, the position after the movement, and the like.

  The plating unit 5 includes a catalyst solution supply unit 55a, a cleaning solution supply unit 55b, and a rinse solution supply unit that supply the catalyst solution N1, the cleaning solution N2, and the rinse solution N3 to the substrate W1 held by the substrate holding unit 52, respectively. 55c. Whether or not the catalyst solution supply unit 55a is provided can be appropriately determined according to the type of the plating solution M1. That is, the catalyst solution supply unit 55a may be omitted depending on the type of the plating solution M1.

  The catalyst solution supply unit 55a includes a nozzle 551a that discharges the catalyst solution N1 to the substrate W1 held by the substrate holding unit 52, and a catalyst solution supply source 552a that supplies the catalyst solution N1 to the nozzle 551a. The tank of the catalyst liquid supply source 552a stores the catalyst liquid N1, and the nozzle 551a is connected to the nozzle 551a from the catalyst liquid supply source 552a through a supply line 554a provided with a flow rate regulator such as a valve 553a. The catalyst liquid N1 is supplied. The control unit 3 controls the catalyst solution supply unit 55a to control the supply timing, the supply amount, and the like of the catalyst solution N1.

  The cleaning liquid supply unit 55b includes a nozzle 551b that discharges the cleaning liquid N2 to the substrate W1 held by the substrate holding unit 52, and a cleaning liquid supply source 552b that supplies the cleaning liquid N2 to the nozzle 551b. A cleaning liquid N2 is stored in a tank of the cleaning liquid supply source 552b, and the cleaning liquid N2 is supplied to the nozzle 551b from the cleaning liquid supply source 552b through a supply line 554b provided with a flow rate regulator such as a valve 553b. Supplied. The control unit 3 controls the cleaning liquid supply unit 55b to control the supply timing, supply amount, and the like of the cleaning liquid N2.

  The rinse liquid supply unit 55c includes a nozzle 551c that discharges the rinse liquid N3 to the substrate W1 held by the substrate holding unit 52, and a rinse liquid supply source 552c that supplies the rinse liquid N3 to the nozzle 551c. A rinsing liquid N3 is stored in the tank of the rinsing liquid supply source 552c, and the nozzle 551c is supplied from the rinsing liquid supply source 552c through a supply line 554c provided with a flow rate regulator such as a valve 553c. A rinse liquid N3 is supplied. The control unit 3 controls the rinsing liquid supply unit 55c to control the supply timing, supply amount, and the like of the rinsing liquid N3.

  The catalyst liquid N1, the cleaning liquid N2, and the rinse liquid N3 are pretreatment liquids for pretreatment that are performed before the plating treatment using the plating liquid M1.

  The catalyst solution N1 contains metal ions (for example, palladium (Pd) ions, platinum (Pt) ions, gold (Au) ions, etc.) having catalytic activity for the oxidation reaction of the reducing agent in the plating solution M1. In the electroless plating process, in order to start the deposition of metal ions in the plating solution M1, the initial film surface (ie, the surface to be plated of the substrate) is sufficient for the oxidation reaction of the reducing agent in the plating solution M1. It is necessary to have a good catalytic activity. Therefore, depending on the type of the plating solution M1, before the plating process is started using the plating solution M1, the surface to be plated of the substrate is treated with the catalyst solution N1, and the metal film having catalytic activity on the surface to be plated of the substrate. It may be preferable to form Whether to perform the treatment with the catalyst solution N1 before starting the plating treatment can be appropriately determined according to the type of the plating solution M1. That is, depending on the type of the plating solution M1, the treatment with the catalyst solution N1 may be omitted. Formation of a metal film having catalytic activity is caused by a substitution reaction. In the substitution reaction, a metal constituting the surface to be plated of the substrate (for example, copper in the copper wiring formed on the surface to be plated of the substrate) serves as a reducing agent, and metal ions (for example, Pd ions) in the catalyst solution N1 are Reduced and deposited on the surface of the substrate to be plated.

  Examples of the cleaning solution N2 include organic acids such as malic acid, succinic acid, citric acid, and malonic acid, and hydrofluoric acid (DHF) (hydrogen fluoride diluted to a concentration that does not corrode the surface to be plated. Aqueous solution) and the like can be used.

  As the rinse liquid N3, for example, pure water or the like can be used.

  The plating processing unit 5 includes a nozzle moving mechanism 56 that drives the nozzles 551a to 551c. The nozzle moving mechanism 56 includes an arm 561, a moving body 562 having a built-in driving mechanism that can move along the arm 561, and a turning lift mechanism 563 that turns and lifts the arm 561. The nozzles 551a to 551c are attached to the moving body 562. The nozzle moving mechanism 56 can move the nozzles 551a to 551c between a position above the center of the substrate W1 held by the substrate holding portion 52 and a position above the periphery of the substrate W1, It can be moved to a standby position outside the cup 57 described later in plan view. In the present embodiment, the nozzles 551a to 551c are held by a common arm, but may be held by separate arms and can move independently. The control unit 3 controls the nozzle moving mechanism 56 to control the movement timing of the nozzles 551a to 551c, the position after the movement, and the like.

  The plating processing unit 5 includes a cup 57 having discharge ports 571a, 571b, and 571c. The cup 57 is provided around the substrate holding part 52 and receives various processing liquids (for example, a plating solution, a cleaning solution, a rinsing solution) scattered from the substrate W1. The cup 57 includes an elevating mechanism 58 that drives the cup 57 in the vertical direction, and liquid discharge mechanisms 59a, 59b, and 59c that collect and discharge various processing liquids scattered from the substrate W1 to the discharge ports 571a, 571b, and 571c, respectively. Is provided. For example, the plating solution M1 scattered from the substrate W1 is discharged from the solution discharge mechanism 59a, the catalyst solution N1 scattered from the substrate W1 is discharged from the solution discharge mechanism 59b, and the cleaning solution N2 and the rinse solution N3 scattered from the substrate W1 are The liquid is discharged from the liquid discharge mechanism 59c. The control unit 3 controls the lifting mechanism 58 to control the lifting timing of the cup 57, the position after lifting, and the like.

  The plating processing unit 5 includes a top plate 61 provided above the substrate W1 held by the substrate holding unit 52, and an elevating mechanism 62 that drives the top plate 61 in the vertical direction and the horizontal direction. The top plate 61 is disposed above the substrate W1 and spaced from the substrate W1. The planar shape of the top plate 61 is a planar shape (for example, a circular shape) corresponding to the planar shape of the substrate W1, and the size of the top plate 61 is adjusted so as to cover substantially the entire surface of the substrate W1. ing. The planar shape and size of the top plate 61 are not particularly limited as long as a space can be formed between the substrate W1 and the top plate 61, and can be changed as appropriate. For example, the planar shape of the top plate 61 may be a rectangular shape or the like. The top plate 61 does not have a through hole, an opening, or the like that can be a flow path for water vapor generated from the plating solution M1. The control unit 3 controls the elevating mechanism 62 to control the movement timing of the top plate 61, the position after the movement, and the like.

  The top plate 61 can be moved up and down independently of the cup 57 by the lifting mechanism 62. Thereby, it becomes easy to carry the substrate in and out of the substrate holding portion 52.

  The elevating mechanism 62 horizontally moves the top plate 61 between a position where substantially the entire surface of the substrate W1 is covered with the top plate 61 and a position where substantially the entire surface of the substrate W1 is not covered with the top plate 61. be able to. Further, the elevating mechanism 62 moves the top plate 61 to a position where substantially the entire surface of the substrate W1 is covered with the top plate 61, and then moves the top plate 61 in the vertical direction, whereby the substrate W1 and the top plate 61 are moved. (The volume of the space S formed between the substrate W1 and the top plate 61) can be adjusted. The liquid is supplied from the various nozzles to the substrate W1 held by the substrate holding unit 52 after the top plate 61 is horizontally moved to a position where the substantially entire surface of the substrate W1 is not covered by the top plate 61. The heating of the plating solution M1 supplied to the substrate W1 moves the top plate 61 to a position where substantially the entire surface of the substrate W1 is covered with the top plate 61, and the distance between the substrate W1 and the top plate 61 (substrate W1 And the volume of the space S formed between the top plate 61 and the top plate 61 is adjusted.

  After the top plate 61 is moved to a position where substantially the entire surface of the substrate W1 is covered with the top plate 61, the distance between the substrate W1 and the top plate 61 is adjusted, whereby the substrate W1 held by the substrate holding part 52 is adjusted. And a space S is formed between the upper plate 61 and the top plate 61 disposed thereabove. The space S is surrounded by a cup 57, but is not sealed by the cup 57, and the space S communicates with an external space (the space in the chamber 51). When the water in the plating solution M1 supplied to the substrate W1 held by the substrate holding part 52 evaporates, the water vapor generated from the plating solution M1 once stays in the space S and then flows out to the external space. Therefore, evaporation of moisture in the plating solution M1 supplied to the substrate W1 held by the substrate holding unit 52 occurs continuously. By adjusting the volume of the space S (for example, the distance between the substrate W1 held by the substrate holding part 52 and the top plate 61), the evaporation amount of moisture from the plating solution M1 can be adjusted. For example, by reducing the volume of the space S, the amount of water evaporated from the plating solution M1 can be reduced. Thereby, it is possible to prevent a rapid increase in the concentration of the plating solution M1 due to evaporation of moisture. The water vapor staying in the space S becomes a heat medium when the plating solution heating unit 63 heats the plating solution 35 supplied to the substrate W <b> 1 held by the substrate holding unit 52. The distance between the substrate W1 held on the substrate holding part 52 and the top plate 61 is appropriately controlled according to the set temperature of the top plate, the plating solution arrival temperature after heating, the temperature rise rate of the plating solution, the amount of plating solution on the substrate, etc. Is done.

  The top plate 61 is provided with a plating solution heating unit 63 that heats the plating solution M1 supplied to the substrate W1 held by the substrate holding unit 52. The substrate W1 held by the substrate holding unit 52 is also heated by the plating solution heating unit 63. The plating solution heating unit 63 includes a heater such as a heating wire or a lamp heater (for example, an LED lamp heater). In the present embodiment, the heater included in the plating solution heating unit 63 is embedded in the top plate 61. In the present embodiment, the plating solution heating unit 63 heats the plating solution M1 on the substrate W1 from above the substrate W1 held by the substrate holding unit 52, but the plating solution heating unit 63 is added to the substrate holding unit 52. The plating solution M1 on the substrate W1 may be heated from below the held substrate W1. In this case, when the substrate W1 held by the substrate holding part 52 is heated, the plating M1 on the substrate W1 is heated. For example, the plating solution heating unit 63 can be provided on the turntable 522 of the substrate holding unit 52. The control unit 3 controls the plating solution heating unit 63 to control heating timing, heating temperature, heating time, and the like.

<Plating method>
Hereinafter, a plating method performed by the plating apparatus 1 will be described. The plating method performed by the plating apparatus 1 includes a plating process for performing plating on the substrate W1. The plating process in the plating process is performed by the plating processing unit 5. The operation of the plating processing unit 5 is controlled by the control unit 3. The plating method performed by the plating apparatus 1 may include a process other than the plating process.

  First, a substrate carry-in process is performed. In the substrate carrying-in process, the substrate W1 is carried into the plating processing unit 5. The control unit 3 controls the transport mechanism 213 to take out the substrate W0 from the carrier C placed on the placement unit 211, place the taken substrate W0 on the delivery unit 214, and control the transport mechanism 222. Then, the substrate W0 placed on the delivery unit 214 is taken out, and the taken out substrate W0 is carried into the plating unit 5.

  A substrate holding process is performed after a board | substrate carrying-in process. In the substrate holding process, the substrate W <b> 1 carried into the plating processing unit 5 is held by the substrate holding unit 52. The control unit 3 controls the elevating mechanism 58 to lower the cup 57 to a predetermined position, and also controls the elevating mechanism 62 to cover the top plate 61 with substantially the entire surface of the substrate W1 covered with the top plate 61. Move horizontally to a position where it is not. As a result, the transport mechanism 222 can access the substrate holding unit 52. The control unit 3 controls the transport mechanism 222 to place the substrate W1 on the substrate holding unit 52. The substrate W1 is horizontally held on the turntable 522 with its outer edge supported by the chuck 523.

  After the substrate holding process, a plating process is performed. The plating process in the plating step is performed on the substrate W1 held by the substrate holding unit 52. The plating processing unit 5 may perform a pretreatment process for pretreating the substrate W1 before the plating process. The pretreatment process may include a cleaning process and a first rinsing process performed after the cleaning process. Moreover, the pretreatment process can include a catalyst solution supply process performed after the first rinsing process. In addition, the pretreatment process can include a second rinsing process performed after the catalyst solution supply process.

  In the cleaning process, the substrate W1 held by the substrate holder 52 is cleaned. The control unit 3 controls the driving unit 524 to rotate the substrate W1 held by the substrate holding unit 52 at a predetermined speed, while controlling the cleaning liquid supply unit 55b to position the nozzle 551b above the substrate W1. The cleaning liquid N2 is supplied from the nozzle 551b to the substrate W1. The cleaning liquid N2 supplied to the substrate W1 spreads on the surface of the substrate W1 due to the centrifugal force accompanying the rotation of the substrate W1. Thereby, deposits and the like attached to the substrate W1 are removed from the substrate W1. The cleaning liquid N2 scattered from the substrate W1 is discharged through the discharge port 571c of the cup 57 and the liquid discharge mechanism 59c. When starting the cleaning process, the control unit 3 controls the lifting mechanism 58 to adjust the position of the cup 57 so that the position of the discharge port 571c of the cup 57 faces the outer peripheral edge of the substrate W1. To do.

  In the first rinsing step, the cleaned substrate W1 is rinsed. The control unit 3 controls the driving unit 524 to control the rinse liquid supply unit 55c while rotating the substrate W1 held by the substrate holding unit 52 at a predetermined speed, so that the nozzle 551c is positioned above the substrate W1. The rinsing liquid N3 is supplied from the nozzle 551c to the substrate W1. The rinse liquid N3 supplied to the substrate W1 spreads on the surface of the substrate W1 due to the centrifugal force accompanying the rotation of the substrate W1. Thereby, the cleaning liquid N2 remaining on the substrate W1 is washed away. The rinse liquid N3 scattered from the substrate W1 is discharged through the discharge port 571c of the cup 57 and the liquid discharge mechanism 59c. When starting the first rinsing step, the control unit 3 controls the lifting mechanism 58 so that the position of the discharge port 571c of the cup 57 becomes a position facing the outer peripheral edge of the substrate W1. Adjust.

  In the catalyst solution supply step, a metal film (catalyst layer) having catalytic activity is formed on the substrate W1 after rinsing. The control unit 3 controls the driving unit 524 to control the catalyst solution supply unit 55a while rotating the substrate W1 held by the substrate holding unit 52 at a predetermined speed, so that the nozzle 551a is positioned above the substrate W1. The catalyst liquid N1 is supplied from the nozzle 551a to the substrate W1. The catalyst liquid N1 supplied to the substrate W1 spreads on the surface of the substrate W1 due to the centrifugal force accompanying the rotation of the substrate W1. As a result, a metal film (for example, Pd film) having catalytic activity is formed on the surface to be plated of the substrate W1 (for example, copper wiring formed on the surface of the substrate W1). The catalyst liquid N1 scattered from the substrate W1 is discharged through the discharge port 571b of the cup 57 and the liquid discharge mechanism 59b. When starting the catalyst solution supply process, the controller 3 controls the elevating mechanism 58 to position the cup 57 so that the position of the discharge port 571b of the cup 57 faces the outer peripheral edge of the substrate W1. Adjust.

  In the second rinsing step, the substrate W1 after the formation of the catalyst layer is rinsed. The control unit 3 controls the driving unit 524 to control the rinse liquid supply unit 55c while rotating the substrate W1 held by the substrate holding unit 52 at a predetermined speed, so that the nozzle 551c is positioned above the substrate W1. The rinsing liquid N3 is supplied from the nozzle 551c to the substrate W1. The rinse liquid N3 supplied to the substrate W1 spreads on the surface of the substrate W1 due to the centrifugal force accompanying the rotation of the substrate W1. As a result, the catalyst liquid N1 remaining on the substrate W1 is washed away. The rinse liquid N3 scattered from the substrate W1 is discharged through the discharge port 571c of the cup 57 and the liquid discharge mechanism 59c. When starting the second rinsing process, the controller 3 controls the lifting mechanism 58 so that the position of the discharge port 571c of the cup 57 is positioned so as to face the outer peripheral edge of the substrate W1. Adjust.

  After the pretreatment process described above is performed as necessary, a plating process is performed. In the plating step, the control unit 3 controls the drive unit 524 to reduce the speed of the substrate W1 held by the substrate holding unit 52 (speed at which the plating solution M1 supplied to the substrate W1 does not scatter from the substrate W1). , Or while maintaining the substrate W1 held by the substrate holder 52 in a stopped state, the plating solution supply unit 53 is controlled so that the nozzle 531 is positioned above the substrate W1, and the nozzle 531 A plating solution M1 is supplied to the substrate W1. The control unit 3 controls the plating solution supply unit 53 to supply a predetermined amount of the plating solution M1 from the nozzle 531 to the substrate W1 once, and then performs a new process until the plating process using the plating solution M1 is completed. The plating solution M1 is not supplied.

  Since the temperature of the plating solution M1 supplied from the plating supply unit 53 is lower than the predetermined plating temperature, the plating solution supply unit 53 supplies the plating solution to the substrate W1 held by the substrate holding unit 52. When M1 is supplied, the plating solution M1 does not exhibit the predetermined plating performance, and the plating reaction does not start or becomes very slow even if started.

  After the plating solution M1 is supplied to the substrate W1 held by the substrate holding unit 52, the control unit 3 controls the elevating mechanism 62 so that substantially the entire surface of the substrate W1 is covered with the top plate 61. After the top plate 61 is moved horizontally until the top plate 61 is lowered, the top plate 61 is moved closer to the substrate W1. Accordingly, when the plating solution M1 supplied to the substrate W1 is heated by the plating solution heating unit 63, a space S is formed between the substrate W1 held by the substrate holding unit 52 and the top plate 61. Is done. The space S is surrounded by a cup 57, but is not sealed by the cup 57, and the space S communicates with the external space. After the top plate 61 is brought close to the substrate W1, the control unit 3 controls the plating solution heating unit 63 to heat the plating solution M1 supplied to the substrate W1 to a predetermined plating processing temperature. The control unit 3 may perform heating by the plating solution heating unit 63 on the substrate W1 before the plating solution M1 is supplied. In this case, the control unit 3 controls the elevating mechanism 62 to horizontally move the top plate 61 to a position where substantially the entire surface of the substrate W1 is covered with the top plate 61, and then lowers the top plate 61 to remove the top plate 61. The plate 61 is brought close to the substrate W1, and then the plating solution heating unit 63 is controlled to preliminarily heat the substrate W1.

  After the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52, the supplied plating solution M1 is heated by the plating solution heating unit 63 to have a predetermined plating processing temperature. At this point, the plating solution M1 exhibits a predetermined plating performance, and the plating process is started. The control unit 3 controls the plating solution heating unit 63 to maintain the temperature of the plating solution M1 at a predetermined plating process temperature throughout the plating process. As a result, a plating film is formed on the surface to be plated of the substrate W1 (when the catalyst solution supply step is performed, a metal film having catalytic activity (for example, a Pd film) formed on the surface of the substrate W1).

  Thus, the plating process for one substrate W1 is performed by the plating solution M1 heated to a predetermined plating process temperature. That is, the control unit 3 supplies a predetermined amount of the plating solution M1 once to the substrate W1 held by the substrate holding unit 52, and then the supplied plating solution M1 is predetermined by the plating solution heating unit 63. The plating solution supply unit 53 and the plating solution heating unit 63 are controlled such that the plating solution is heated to the plating treatment temperature and the plating treatment is performed with the plating solution M1 heated to the predetermined plating treatment temperature.

  After the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52, the supplied plating solution M1 is heated by the plating solution heating unit 63. Water in M1 evaporates, and water vapor generated from the plating solution M1 stays in the space S. The space S is surrounded by a cup 57, but is not sealed by the cup 57, and the space S communicates with an external space (the space in the chamber 51). The water vapor generated from the plating solution M1 once stays in the space S and then flows out to the external space. Therefore, the evaporation of moisture in the plating solution M1 occurs continuously. By adjusting the volume of the space S (for example, the distance between the substrate W1 held by the substrate holding part 52 and the top plate 61), the evaporation amount of moisture from the plating solution M1 can be adjusted. For example, by reducing the volume of the space S, the amount of water evaporated from the plating solution M1 can be reduced. Thereby, it is possible to prevent a rapid increase in the concentration of the plating solution M1 due to evaporation of moisture. The distance between the substrate W1 held on the substrate holding part 52 and the top plate 61 is appropriately controlled by the set temperature of the top plate, the plating reaching temperature after heating, the rate of temperature rise of the plating solution, the amount of plating solution on the substrate, and the like. The

After the plating solution M1 is supplied from the plating solution supply unit 53 to the substrate W1 held by the substrate holding unit 52, the supplied plating solution M1 is heated by the plating solution heating unit 63. As the temperature of M1 rises, the water in the plating solution M1 evaporates and the concentration of the plating solution M1 rises. Thus, the concentration of the plating solution M1 at the time when the predetermined plating treatment temperature is reached is equal to or higher than the lower limit value of the predetermined concentration range (ie, C _L (%)) and the median value of the predetermined concentration range (ie, (C _L + C _H ) / 2) or less.

After the temperature of the plating solution M1 reaches a predetermined plating temperature, the plating component of the plating solution M1 is consumed, but since the heating by the plating solution heating unit 63 is continued, the concentration of the plating solution M1 increases. That is, since the increase in the concentration of the plating solution M1 due to evaporation of moisture in the plating solution M1 is larger than the decrease in the concentration of the plating solution M1 due to consumption of the plating component in the plating solution M1, the plating solution M1 is subjected to a predetermined plating treatment. Even after the temperature is reached, the concentration of the plating solution M1 rises and eventually reaches the upper limit (that is, C _H (%)) of a predetermined concentration range.

As the concentration of the plating solution M1 at the time when the predetermined plating temperature is reached is closer to the lower limit value (ie, C _L (%)) of the predetermined concentration range, the upper limit value (ie, C _H ( %)), That is, the time during which the plating solution M1 can be used for the plating process becomes longer.

The controller 3 discharges the plating solution M1 from the substrate W1 before the concentration of the plating solution M1 reaches the upper limit value (that is, C _H (%)) of the predetermined concentration range, and ends the plating process. When finishing the plating process, the control unit 3 controls the elevating mechanism 62 to raise the top plate 61 to a predetermined position, and then tops up to a position where almost the entire surface of the substrate W1 is not covered with the top plate 61. The plate 61 is moved horizontally. Thereafter, the control unit 3 controls the driving unit 524 to control the rinse liquid supply unit 55c while rotating the substrate W1 held by the substrate holding unit 52 at a predetermined speed, so that the nozzle 551c is positioned above the substrate W1. The rinse liquid N3 is supplied from the nozzle 551c to the substrate W1. The plating solution M1 and the rinsing solution N3 on the substrate W1 are scattered from the substrate W1 by the centrifugal force accompanying the rotation of the substrate W1, and the plating solution M1 and the rinsing solution N3 scattered from the substrate W1 are discharged from the discharge port 571a of the cup 57 and the solution. It is discharged via the discharge mechanism 59a. When finishing the plating process, the control unit 3 controls the lifting mechanism 58 to adjust the position of the cup 57 so that the position of the discharge port 571a of the cup 57 faces the outer peripheral edge of the substrate W1. To do.

  In the plating process part 5, it is preferable to perform the drying process which dries the board | substrate W1 after a plating process. In the drying process, the substrate W1 can be dried by rotating the substrate W1 by natural drying or by spraying a drying solvent or a drying gas onto the substrate W1.

  After the plating process, a substrate carry-out process is performed. In the substrate carry-out step, the substrate W2 after the plating process is discharged from the plating processing unit 5. At this time, the control unit 3 controls the transport mechanism 222 to take out the substrate W2 from the plating processing unit 5, place the taken-out substrate W2 on the delivery unit 214, and control the transport mechanism 213 to deliver the delivery unit. The substrate W <b> 2 placed on 214 is taken out and stored in the carrier C of the placement unit 211.

DESCRIPTION OF SYMBOLS 1 Plating apparatus 2 Plating unit 3 Control part 5 Plating part 53 Plating liquid supply part 61 Top plate 63 Plating liquid heating part W1 Board | substrate M1 Plating liquid S Space

Claims (9)

A plating apparatus comprising: a plating processing unit that performs plating processing on a substrate at a predetermined plating processing temperature; and a control unit that controls the operation of the plating processing unit,
The plating section is
A plating solution supply unit that supplies a plating solution that exhibits a predetermined plating performance in a predetermined concentration range to the substrate;
A plating solution heating section for heating the plating solution supplied to the substrate to the predetermined plating treatment temperature;
With
The plating solution supplied to the substrate from the plating solution supply unit is heated to the predetermined plating treatment temperature by the initial temperature adjusted to be lower than the predetermined plating treatment temperature and the plating solution heating unit. The initial concentration adjusted so that the concentration of the plating solution at the time of reaching the lower limit value of the predetermined concentration range and the median value of the predetermined concentration range or less,
After the control unit is supplied with a predetermined amount of the plating solution once to the substrate, the supplied plating solution is heated to the predetermined plating processing temperature and heated to the predetermined plating processing temperature. The said plating processing apparatus which controls the said plating solution supply part and the said plating solution heating part so that the said plating process may be performed with the said plated solution.   The plating apparatus according to claim 1, wherein the initial concentration is adjusted such that the concentration of the plating solution at the time when the predetermined concentration reaches the predetermined plating processing temperature is near a lower limit value of the predetermined concentration range.   The plating apparatus according to claim 1 or 2, wherein the initial concentration is adjusted to be less than a lower limit value of the predetermined concentration range. The plating section includes a top plate provided above the substrate;
When the plating solution supplied to the substrate is heated by the plating solution heating unit, water vapor generated from the plating solution supplied to the substrate is interposed between the substrate and the top plate. The plating apparatus according to any one of claims 1 to 3, wherein a staying space is formed. A plating method for performing plating on a substrate at a predetermined plating temperature,
A plating solution that exhibits a predetermined plating performance in a predetermined concentration range with respect to the substrate, an initial temperature adjusted to be lower than the predetermined plating temperature, and a time when the predetermined plating temperature is reached. A plating solution supply step of supplying the plating solution having an initial concentration adjusted such that the concentration of the plating solution is not less than the lower limit value of the predetermined concentration range and not more than the median value of the predetermined concentration range;
A plating solution heating step for heating the plating solution supplied to the substrate to the predetermined plating temperature;
Including
In the plating solution supply step, a predetermined amount of the plating solution is supplied once to the substrate,
In the plating solution heating step, the plating solution supplied in the plating solution supply step is heated to the predetermined plating treatment temperature, and the plating treatment is performed with the plating solution heated to the predetermined plating treatment temperature. The plating method.   The plating method according to claim 5, wherein the initial concentration is adjusted so that the concentration of the plating solution at the time when the predetermined concentration reaches the predetermined plating temperature is near the lower limit value of the predetermined concentration range.   The plating method according to claim 5 or 6, wherein the initial concentration is adjusted to be less than a lower limit value of the predetermined concentration range.   In the state in which the plating solution heating step has a space in which water vapor generated from the plating solution supplied to the substrate stays between the substrate and a top plate provided above the substrate. The plating method as described in any one of Claims 5-7 performed.   A program that, when executed by a computer for controlling the operation of the plating apparatus, causes the computer to control the plating apparatus and execute the plating method according to any one of claims 5 to 8. Recorded storage medium.

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