JP2017069001A - Method for forming conductive pattern, and conductive pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: a method for forming a conductive pattern which enables suppression of unevenness in conductivity, and especially which can suitably form a transparent conductive film and lead-out wiring connected to the transparent conductive film; and a conductive pattern.SOLUTION: The method for forming a conductive pattern comprises: forming a plurality of linear liquids 2 by applying linearly a liquid containing a conductive material on a substrate 1 and, when drying the plurality of linear liquids 2, depositing a conductive material at marginal parts of the linear liquids to form a parallel line pattern I comprising a plurality of parallel line patterns 3 and 5; subsequently applying a conductive material on the substrate 1 and forming a solid pattern I so that it overlaps with at least a portion of end parts of the parallel line pattern to form a conductive pattern I; and, then, forming at least one metal layer on the parallel line pattern I and the solid pattern I of the conductive pattern I to form a conductive pattern II comprising a parallel line pattern II and a solid pattern II, where an in-plane variation of film thickness of the solid pattern II is set at 30% or less.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a method for forming a conductive pattern and a conductive pattern, and more specifically, a conductive pattern that can suppress unevenness of conductivity and that can particularly suitably form a transparent conductive film and a lead-out wiring connected to the transparent conductive film. And a conductive pattern.

  As a method for forming a fine line pattern including a conductive material, a method using a photolithography technique has been widely used.

  However, the photolithographic technique has a lot of material loss and a complicated process. For this reason, various methods have been studied in which the material loss is small and the process is simple.

  For example, there is a method in which a thin line pattern is formed by applying a droplet containing a conductive material to a substrate by an inkjet method or the like. However, in the inkjet method, the width of the thin line is usually set to Since the diameter is not smaller than the diameter, it is difficult to form a fine line pattern having a line width of several μm.

  On the other hand, after applying a repellent to the entire surface of the substrate in advance, a part of the repellent is hydrophilized using a laser or the like to form a hydrophilic / repellent pattern (that is, a pattern formed by a hydrophilic portion and a water repellent portion). There is a method of forming fine lines by applying droplets by ink jet there. However, this method has a problem that the process becomes complicated by applying a repellent or forming a repellent pattern with a laser.

  In contrast, a method is proposed in which a conductive material, which is the solid content of a droplet, is deposited on the periphery of the droplet using the flow inside the droplet to form a pattern with a finer width than the droplet. (Patent Document 1).

  According to this method, it is possible to form a thin line having a width of several μm that is equal to or smaller than the droplet diameter without requiring a special process.

  It has also been proposed that a transparent conductive film is formed by forming a ring having a fine width of conductive fine particles by using this method and connecting a plurality of these rings (Patent Document 2).

  However, there is a problem that the number of intersections of the rings increases in order to create a conductive path, and transparency is impaired.

  On the other hand, the applicant has heretofore made use of the flow inside the droplets to dry the conductive material when drying the liquid containing the conductive material applied in a line on the substrate. Depositing on the edge of the line-shaped liquid to form a parallel line pattern composed of a pair of conductive thin wires parallel to each other, and further forming a transparent conductive film with such a parallel line pattern (Patent Document 3).

  According to this transparent conductive film, both transparency and conductivity can be suitably achieved.

JP 2005-95787 A WO2011 / 051952 JP 2014-38992 A

  The transparent conductive film described above can be suitably used as, for example, a position detection electrode in a touch panel sensor (for example, an X electrode and a Y electrode in a capacitive touch panel sensor). In this case, the position detection electrode made of a transparent conductive film is connected to a control IC for detecting position information via a lead wiring.

  Such a lead-out wiring may be formed by a method of depositing a conductive material on the edge of the line-shaped liquid. However, in this method, since the two conductive fine wires to be formed are connected to each other at both ends, these two conductive fine wires are connected to two independent wirings (that is, to individually send electric signals). It is difficult to use as wiring that can be transmitted. When these two conductive thin wires are used as one wiring, the space occupied by one wiring increases.

  Therefore, the present inventor uses a thin line as a lead wiring by providing a solid pattern made of a conductive material at the end of an electrode made of a transparent conductive film and then dividing the solid pattern into a plurality of fine lines. I examined that.

  For example, by removing a part of the solid pattern provided at the end portion of the electrode made of the transparent conductive film, the wiring (line) corresponding to the remaining portion and the space corresponding to the removed portion are alternately repeated. Line and space "(hereinafter sometimes referred to as" L / S ") can be formed. In this way, by forming a plurality of lead lines, the space occupied by one line can be reduced.

  Furthermore, electroconductivity can be further improved by laminating a metal layer on the transparent conductive film and the solid pattern by electrolytic plating or the like. However, a new problem has been found that even in the case of a solid pattern in which even a metal layer is laminated to improve conductivity, unevenness of conductivity is generated in a plurality of lead wirings formed by dividing the solid pattern. It was done. As a result of research on this, it has been found that due to the in-plane variation of the film thickness in the solid pattern, the variation in the thickness of the plurality of lead-out wirings causes uneven conductivity.

  If such unevenness of conductivity can be suppressed, the conductive pattern can be used more suitably, for example, the sensitivity of detecting position information by the touch panel sensor can be further improved.

  Accordingly, an object of the present invention is to provide a method for forming a conductive pattern and a conductive pattern that can suppress unevenness of conductivity, and in particular, can suitably form a transparent conductive film and a lead-out wiring connected to the transparent conductive film. is there.

  Other problems of the present invention will become apparent from the following description.

  The above problems are solved by the following inventions.

1.
Applying a liquid containing a conductive material on a substrate to form a plurality of line-shaped liquids, and drying the plurality of line-shaped liquids, using the flow inside the line-shaped liquid, The conductive material is deposited on the edge of the line-shaped liquid to form a parallel line pattern composed of two parallel line segments from each line-shaped liquid, and a parallel line pattern composed of a plurality of the parallel line patterns. Form I,
Next, a conductive material is applied on the base material, a solid pattern I is formed so as to overlap at least a part of the end of the parallel line pattern, and the conductive material composed of the parallel line pattern I and the solid pattern I is formed. Forming a sex pattern I,
Next, when the conductive pattern I is formed of the parallel line pattern II and the solid pattern II by laminating one or more metal layers on the parallel line pattern I and the solid pattern I of the conductive pattern I. In addition,
An in-plane variation in the film thickness of the solid pattern II is 30% or less.
2.
2. The method for forming a conductive pattern according to claim 1, wherein a ratio a2 / b2 of the film thickness a2 of the solid pattern II and the film thickness b2 of the parallel line pattern II is in a range of 0.5-2.
3.
3. The method for forming a conductive pattern according to 1 or 2, wherein a film thickness a2 of the solid pattern II and a film thickness b2 of the parallel line pattern II are in a range of 0.5 μm to 10 μm.
4).
4. The method for forming a conductive pattern according to any one of 1 to 3, wherein an in-plane variation in film thickness of the solid pattern I is 30% or less.
5.
5. The conductivity according to any one of items 1 to 4, wherein a ratio a1 / b1 between the thickness a1 of the solid pattern I and the thickness b1 of the parallel line pattern I is set in a range of 0.5 to 2. Pattern formation method.
6).
6. The method for forming a conductive pattern according to any one of 1 to 5, wherein the parallel line pattern I is formed in a mesh shape.
7).
7. The method for forming a conductive pattern according to any one of 1 to 6, wherein the solid pattern II is divided into a plurality of thin lines.
8).
8. The method for forming a conductive pattern according to 7, wherein the method of dividing the solid pattern II into a plurality of thin lines is a laser method or a photolithography method.
9.
9. The method for forming a conductive pattern according to any one of 1 to 8, wherein the parallel line pattern II is divided into a plurality of units.
10.
10. The method for forming a conductive pattern according to 9, wherein the method of dividing the parallel line pattern II into a plurality of units is a laser method or a photolithography method.
11.
11. The method for forming a conductive pattern according to any one of 1 to 10, wherein the parallel line pattern I is formed as a plurality of units.
12
12. The method for forming a conductive pattern as described in 11 above, wherein the method for forming the parallel line pattern I as a plurality of units is an ink jet method.
13.
13. The method for forming a conductive pattern according to any one of 1 to 12, wherein a method of laminating at least one metal layer on the parallel line pattern I and the solid pattern I is a plating method.
14
When the solid pattern I is formed by applying ink containing the conductive material on the base material, the amount of ink to be applied to a position corresponding to the outer peripheral portion of the solid pattern I is set to the inside of the solid pattern I. The method for forming a conductive pattern according to any one of 1 to 13, wherein the amount of ink applied to a position corresponding to is in a range of 20% to 70%.
15.
When the solid pattern I is formed on the substrate by applying an ink containing the conductive material, the ink contains a solvent having a high affinity for the conductive material. The formation method of the electroconductive pattern in any one of -14.
16.
A conductive material that overlaps at least a part of an end of the parallel line pattern, and a parallel line pattern I having a plurality of parallel line patterns each including two parallel line segments containing the conductive material on a base material A conductive pattern I comprising a solid pattern I containing is formed,
Further, one or more metal layers are laminated on the parallel line pattern I and the solid pattern I of the conductive pattern I to form a conductive pattern II including the parallel line pattern II and the solid pattern II. And
An in-plane variation in film thickness of the solid pattern II is 30% or less.
17.
17. The conductive pattern according to 16, wherein a ratio a2 / b2 between the thickness a2 of the solid pattern II and the thickness b2 of the parallel line pattern II is in the range of 0.5-2.
18.
18. The conductive pattern according to 16 or 17, wherein a film thickness a2 of the solid pattern II and a film thickness b2 of the parallel line pattern II are in a range of 0.5 μm to 10 μm.
19.
19. The conductive pattern according to any one of 16 to 18, wherein the in-plane variation of the film thickness of the solid pattern I is 30% or less.
20.
The conductivity according to any one of 16 to 19, wherein a ratio a1 / b1 of the thickness a1 of the solid pattern I and the thickness b1 of the parallel line pattern I is in the range of 0.5 to 2. pattern.
21.
21. The conductive pattern according to any one of 16 to 20, wherein the parallel line pattern I is formed in a mesh shape.
22.
The conductive pattern according to any one of 16 to 21, wherein the parallel line pattern II is divided into a plurality of units.
23.
23. A method for forming a conductive pattern, comprising dividing the solid pattern II provided in the conductive pattern according to any one of 16 to 22 into a plurality of thin lines.

  According to the present invention, it is possible to provide a method for forming a conductive pattern and a conductive pattern that can suppress unevenness in conductivity, and in particular, can suitably form a transparent conductive film and a lead-out wiring connected to the transparent conductive film. .

A perspective cross-sectional view conceptually illustrating how a parallel line pattern is formed from a line-shaped liquid The top view explaining notionally an example of the method of forming an electroconductive pattern A plan view conceptually illustrating a configuration example of a conductive pattern A plan view conceptually explaining another configuration example of a conductive pattern Partial cutaway enlarged cross-sectional view illustrating a conductive pattern according to the present invention The top view which shows the solid pattern which concerns on this invention The top view explaining notionally an example which divides a conductive pattern The top view explaining notionally another example which divides a conductive pattern A perspective sectional view showing an example of a parallel line pattern formed on a substrate It is explanatory drawing which measures the in-plane dispersion | variation in film thickness of the conductive pattern of this invention, (a) is a top view which shows the film thickness measurement site | part of a solid pattern part, (b) is a parallel line pattern (mesh-like pattern) Plan view showing film thickness measurement site

  In the method for forming a conductive pattern of the present invention, a conductive pattern I is formed on a substrate, and then a metal layer is laminated on the conductive pattern 1 to form a conductive pattern II.

  Specifically, a liquid containing a conductive material is applied in a line shape on a substrate to form a line liquid, and when the liquid is dried, the flow of the inside of the line liquid is used to make the conductive material. A parallel line pattern composed of two parallel line segments obtained by depositing the property material on the edge of the line liquid is formed. The parallel line pattern I is formed by providing a plurality of such parallel line patterns on the substrate.

  Next, on the base material, a conductive material that is the same as or different from the conductive material included in the plurality of parallel line patterns I is applied, and the solid pattern is overlapped with at least a part of the end portions of the parallel line patterns. I is formed.

  Thus, the conductive pattern I is formed by the parallel line pattern I and the solid pattern I.

  Next, one or more metal layers are further laminated on the parallel line pattern I and the solid pattern I of the conductive pattern I to form a conductive pattern II composed of the parallel line pattern II and the solid pattern II.

  One feature of the present invention is that the in-plane variation of the film thickness of the solid pattern II is 30% or less. Thereby, the nonuniformity of conductivity can be suppressed, and in particular, an effect that the transparent conductive film and the lead-out wiring connected to the transparent conductive film can be preferably formed can be obtained.

  Hereinafter, embodiments for carrying out the present invention with reference to the drawings will be described in order for forming the conductive pattern I and the conductive pattern II.

  FIG. 1 is a perspective cross-sectional view conceptually illustrating how a parallel line pattern is formed from a line-shaped liquid, and the cross-section corresponds to a vertical section cut in a direction perpendicular to the line-shaped liquid formation direction. To do.

  In FIG. 1, 1 is a base material, 2 is a line-shaped liquid containing a conductive material, and 3 is formed by selectively depositing a conductive material on the edge of the line-shaped liquid 2. It is a coating film (hereinafter also referred to as a parallel line pattern).

  In FIG. 1A, a line-like liquid 2 containing a conductive material is applied on a substrate 1.

  As shown in FIG. 1B, when the line-shaped liquid 2 containing the conductive material is evaporated and dried, the conductive material is selectively applied to the edge of the line-shaped liquid 2 by utilizing the coffee stain phenomenon. Deposit.

  The coffee stain phenomenon can be caused by setting conditions for drying the line-shaped liquid 2. That is, since the drying of the line-shaped liquid 2 is faster at the peripheral portion than at the central portion, local deposition of the conductive material occurs at the peripheral portion of the line-shaped liquid 2. The peripheral portion of the line-shaped liquid 2 is fixed by the deposited conductive material, and shrinkage in the width direction of the line-shaped liquid 2 due to subsequent drying is suppressed.

  As indicated by the arrows in FIG. 1B, the liquid in the line-shaped liquid 2 forms a flow from the central part toward the peripheral part so as to supplement the liquid lost by evaporation at the peripheral part. This flow causes additional conductive material to be carried to the peripheral edge, resulting in further conductive material deposition at the peripheral edge. This flow is due to the fixation of the contact line of the line-shaped liquid 2 accompanying the drying and the difference in the evaporation amount between the central part and the peripheral part, and the solid content concentration, the line-shaped liquid 2 and the substrate 1 The contact angle, the amount of the line-shaped liquid 2, the heating temperature of the substrate 1, the arrangement density of the line-shaped liquid 2, or the environmental factors of temperature, humidity, and pressure vary. It is therefore desirable to control these drying conditions to adjust the flow formation.

  As a result, as shown in FIG. 1C, a parallel line pattern 3 made of fine lines including a conductive material is formed on the base material 1. A parallel line pattern 3 formed from one line-shaped liquid 2 is composed of a set of two line segments 31 and 32 parallel to each other.

  Application of the line-shaped liquid onto the substrate can be performed using a droplet discharge device. Specifically, a plurality of droplets containing a conductive material are discharged from the nozzle of the droplet discharge device while moving the droplet discharge device relative to the substrate, and the discharged droplets are combined on the substrate. By doing so, a line-like liquid containing a conductive material can be formed. The droplet discharge device can be constituted by, for example, an inkjet head provided in the inkjet recording device.

  FIG. 2 is a plan view conceptually illustrating an example of a method for forming the conductive pattern I. Here, a case where a mesh pattern in which a plurality of parallel line patterns 3 intersect is formed as the parallel line pattern I constituting the conductive pattern I will be described.

  First, as shown in FIG. 2A, a plurality of first linear liquids 2 are formed on the substrate 1 along the direction X.

  By drying the first line-shaped liquid 2, the first parallel line pattern 3 can be formed from each first line-shaped liquid 2 as shown in FIG. The first parallel line pattern 3 is composed of line segments 31 and 32.

  Next, as shown in FIG. 2 (c), a plurality of second linear liquids 4 are formed on the substrate 1 along the direction Y that intersects the direction X at a predetermined angle. The predetermined angle is not particularly limited, but is preferably 90 ° as in the illustrated example. The second line-shaped liquid 4 is applied so as to intersect the first parallel line pattern 3.

  By drying these second line-shaped liquids 4, second parallel line patterns 5 can be formed from the respective second line-shaped liquids 4 as shown in FIG. The second parallel line pattern 5 is composed of line segments 51 and 52.

  In this way, a mesh pattern 6 formed by intersecting the first parallel line pattern 3 and the second parallel line pattern 5 can be formed.

  Next, the solid pattern 7 is formed so as to overlap at least part of the end of the mesh pattern 6. The solid pattern 7 is formed in a solid film shape on the entire surface in a predetermined region on the substrate 1.

  In the illustrated example, the solid pattern 7 is formed so as to overlap one side of the periphery of the mesh pattern 6. More specifically, the solid pattern 7 is formed so as to overlap one of the four sides of the mesh pattern 6 formed in a square shape as a whole.

  Further, as shown in the drawing, the solid pattern 7 is preferably formed so as to overlap the end of one or more parallel line patterns of the parallel line patterns 3 and 5 constituting the mesh pattern 6. As shown in FIG. 2D, at the end portions of the parallel line patterns 3 and 5, two line segments constituting the parallel line patterns 3 and 5 are connected to each other by a loop portion U that draws a U-shaped curve. As shown in FIG. 2E, it is preferable to form the solid pattern 7 so as to overlap the loop portion U. Thereby, in the loop part U where the density | concentration of an electroconductive material tends to vary, the dispersion | variation can be prevented suitably.

  The solid pattern 7 is arranged so as to overlap the entire circumference of the mesh pattern 6 (FIG. 3A), arranged on the left and right of the mesh pattern 6 (FIG. 3B), and the mesh pattern. It can also be arranged above and below 6 (FIG. 3C).

  Further, in the above description, the first parallel line pattern 3 is formed in a direction along one side of the rectangular substrate 1, and the second parallel line pattern 5 is the other one orthogonal to the one side. Although formed in a direction along the side, the present invention is not limited to this, and the first parallel line pattern 3 and the second parallel line pattern 5 are respectively inclined in the direction inclined with respect to the side of the substrate 1. It may be formed along. This will be described with reference to FIG.

  In the example of FIG. 4, the mesh pattern 6 shown in FIG. Even in such an arrangement, the solid pattern 7 is arranged so as to overlap the entire circumference of the mesh pattern 6 (FIG. 4A), and arranged on the left and right sides of the mesh pattern 6 (FIG. 4). (B)) can be arranged above and below the mesh pattern 6 (FIG. 4C).

  As a method for forming the solid pattern 7, various methods such as a printing method such as screen printing, a droplet discharge method (such as an ink jet method or a dispenser method), and a transfer method can be used. The conductive material is preferably applied on the substrate as a liquid (ink) containing the conductive material. By drying this liquid, the solid pattern I can be formed.

  The solid pattern 7 is preferably formed using a droplet discharge device. Specifically, a plurality of droplets containing a conductive material are discharged from a nozzle of the droplet discharge device into a predetermined region on the substrate 1 while moving the droplet discharge device relative to the substrate 1. The solid pattern 7 can be formed by drying the discharged droplets on the substrate 1.

  Moreover, it is also preferable to make the drying conditions for drying the droplets containing the conductive material applied on the substrate 1 for forming the solid pattern 7 different from the drying conditions for forming the parallel line pattern. That is. When the solid pattern 7 is formed, it is not necessary to use the flow inside the droplet as in the case of forming a parallel line pattern, and the drying conditions in which the flow is suppressed as compared with the case of forming the parallel line pattern, or It is also preferable to apply drying conditions that suppress the coffee stain phenomenon.

  As a droplet discharge device for forming the solid pattern 7, it is preferable to use the droplet discharge device used for forming the mesh pattern 6.

  Next, the conductive material used for forming the conductive pattern I will be described in detail.

  The conductive material used for forming the conductive pattern I is not particularly limited, but is preferably a conductive material or a conductive material precursor. An electroconductive material precursor refers to what can be changed into an electroconductive material by performing an appropriate process.

  Moreover, as a conductive material, electroconductive fine particles, a conductive polymer, etc. can be illustrated preferably, for example.

  Here, the conductive fine particles are not particularly limited, but Au, Pt, Ag, Cu, Ni, Cr, Rh, Pd, Zn, Co, Mo, Ru, W, Os, Ir, Fe, Mn, Ge, Sn. Fine particles such as Ga, In and the like can be preferably exemplified, and among them, use of fine metal particles such as Au, Ag and Cu is more preferable because a circuit pattern having low electric resistance and strong against corrosion can be formed. From the viewpoint of cost and stability, metal fine particles containing Ag are most preferable. The average particle diameter of these metal fine particles is preferably in the range of 1 to 100 nm, more preferably in the range of 3 to 50 nm.

  It is also preferable to use carbon fine particles as the conductive fine particles. Examples of the carbon fine particles include graphite fine particles, carbon nanotubes, fullerenes and the like.

  Although it does not specifically limit as a conductive polymer, (pi) conjugated system conductive polymers, such as polythiophenes and polyanilines, can be mentioned preferably.

  The conductive material used for forming the solid pattern I may be different from the conductive material used for forming the parallel line pattern I, but is more preferably the same.

  The line-shaped liquid used for the parallel line pattern I and the liquid containing a conductive material used when forming the solid pattern I are used in combination of one or more of water and organic solvents. be able to.

  The organic solvent is not particularly limited. For example, alcohols such as 1,2-hexanediol, 2-methyl-2,4-pentanediol, 1,3-butanediol, 1,4-butanediol, propylene glycol, Examples include ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and dipropylene glycol monoethyl ether.

  Further, the liquid containing the conductive material may contain various additives such as a surfactant as long as the effects of the present invention are not impaired. By using a surfactant, for example, when forming a line liquid using a droplet discharge method such as an inkjet method, it is possible to stabilize the discharge by adjusting the surface tension etc. become.

  The substrate 1 is not particularly limited. For example, glass, plastic (polyethylene terephthalate, polybutylene terephthalate, polyethylene, polypropylene, acrylic, polyester, polyamide, etc.), metal (copper, nickel, aluminum, iron, etc., or an alloy) And ceramics, and the like. These may be used alone or in a bonded state. Among these, plastic is preferable, and polyethylene terephthalate, polyolefin such as polyethylene and polypropylene, and the like are preferable.

  After forming the conductive pattern I, by laminating one or more metal layers on each of the parallel line pattern I and the solid pattern I, the conductive pattern II composed of the parallel line pattern II and the solid pattern II is formed. Form. By laminating the metal layers, the conductivity of the conductive pattern I can be improved.

  The method for laminating the metal layers is not particularly limited, but it is preferable to use, for example, electrolytic plating. When electrolytic plating is used, the parallel line pattern I and the solid pattern I of the conductive pattern I are electrically conductive, so that the parallel line pattern I and the solid pattern I can be fed to be electroplated. . Thereby, a metal layer can be selectively laminated | stacked on the parallel line pattern I and the solid pattern I of the electroconductive pattern I, without forming a metal layer in the base material 1 in which the electroconductive pattern I is not formed. . Therefore, the conductivity can be suitably improved without affecting the visibility of the transparent conductive film using the conductive pattern.

  When electrolytic plating is used, power is supplied by bringing a power supply member into contact with the parallel line pattern I whose resistance value tends to be relatively large, and power is supplied to the solid pattern I via the parallel line pattern I. It is preferable to do. Thereby, the effect which can prevent suitably that the thickness of the metal layer laminated | stacked on each of the parallel line pattern I and the solid pattern I is acquired is acquired.

  The metal layer to be laminated on the upper surface of the parallel line pattern I and the solid pattern I is not limited to one layer, but a plurality of types and a plurality of types, for example, a nickel plating layer is further provided on the copper plating layer. It is also preferable to laminate a metal layer composed of layers.

  FIG. 5 is an enlarged cross-sectional view showing the conductive pattern II after the metal layer is formed.

  As shown in FIG. 5, the solid pattern 7 is laminated so as to overlap the end of the parallel line pattern 3 constituting the conductive pattern I. a1 is the thickness of the solid pattern 7, and b1 is the thickness of the parallel line pattern 3. The thickness b <b> 1 of the parallel line pattern 3 corresponds to the height of the thin lines constituting the parallel line pattern 3.

  The metal layer 9 described above is laminated on each of the solid pattern 7 and the parallel line pattern 3 to form a conductive pattern II. a2 is the thickness of the solid pattern 7 including the metal layer 9 as the conductive pattern 2, and b2 is the thickness of the parallel line pattern 3 including the metal layer 9 as the conductive pattern 2.

  By setting the in-plane variation of the film thickness of the solid pattern II to 30% or less, preferably 20% or less, more preferably 10% or less, for example, the solid pattern 7 is divided into a plurality of thin lines and these are drawn out. In the case where the thin film is used, the variation in the film thickness of each thin wire is suppressed, so that an effect of suppressing unevenness in conductivity can be obtained.

  It is desirable that the in-plane variation of the film thickness of the solid pattern I which is the base of the solid pattern II is 30% or less, preferably 20% or less, more preferably 10% or less. As a result, it is easy to uniformly deposit the metal layer on the solid pattern I, and the effect of facilitating the in-plane variation of the film thickness of the solid pattern II to be 30% or less can be obtained.

  The ratio a2 / b2 between the thickness a2 of the solid pattern II and the thickness b2 of the parallel line pattern II is preferably in the range of 0.5-2. That is, since the difference in film thickness between the solid pattern II and the parallel line pattern II is so small as to be within the above range, an effect of further preventing the uneven conductivity in the lead-out wiring can be obtained. Further, since the occurrence of a step on the surface of the conductive pattern II is prevented, when another substrate or another layer is bonded to the substrate 1 provided with the conductive pattern II, It is possible to prevent the level difference from being visually recognized at the boundary of the parallel line pattern II, and to obtain an effect of excellent bonding suitability.

  Regarding the solid pattern I and the parallel line pattern I which are the bases of the solid pattern II and the parallel line pattern II, the ratio a1 / b1 between the film thickness a1 of the solid pattern I and the film thickness b1 of the parallel line pattern I is set to 0.5 to 0.5. A range of 2 is preferable. Since the film thickness difference between the solid pattern I and the parallel line pattern I is so small as to be within the above range, it becomes easy to uniformly stack the metal layer on these, and the film pattern a2 and the parallel line of the solid pattern II It is also easy to set the ratio a2 / b2 of the film thickness b2 of the pattern II in the range of 0.5-2.

  Moreover, it is preferable to set the film thickness a2 of the solid pattern II and the film thickness b2 of the parallel line pattern II to the range of 0.5 μm to 10 μm, respectively. By making these film thicknesses 0.5 μm or more, the conductivity can be further improved, and by making these film thicknesses 10 μm or less, it is possible to obtain an effect that the variation in film thickness is more easily suppressed.

  In order to suppress the in-plane variation of the film thickness in the solid pattern II, it is preferable to suppress the in-plane variation of the film thickness in the solid pattern I. That is, when forming the solid pattern 7 constituting the solid pattern I, the composition of the droplets, the drying conditions of the droplets, the discharge conditions of the droplets, or the substrate are controlled so as to suppress the in-plane variation of the film thickness. It is preferable to appropriately set the conditions for applying the droplets.

  For example, as shown in FIG. 6, when the solid pattern 7 is formed on the substrate 1 by applying ink containing a conductive material, the amount of ink applied to a position corresponding to the outer peripheral portion 71 of the solid pattern 7 Is preferably in the range of 20% to 70% of the amount of ink applied to the position corresponding to the inside 72 of the solid pattern 7. The amount of ink here means the volume of ink applied per unit area. As a result, even when the outer peripheral portion 71 of the pattern tends to rise more than the inner portion 72 due to the drying of the ink, the film thickness can be made uniform by using the raised portions. As a result, the in-plane variation of the film thickness of the solid pattern I can be more reliably reduced to 30% or less. As a preliminary test, the degree of bulging in the outer peripheral portion 71 is observed in advance, and the amount of ink applied to the position corresponding to the outer peripheral portion 71 corresponds to the inner portion 72 so as to become flat as a result of trying to bulge. It is preferable to reduce relative to the amount of ink applied to the position.

  It is also preferable to make the in-plane variation of the film thickness of the solid pattern I 30% or less by utilizing the characteristics of the ink (liquid) used when forming the solid pattern 7. As a liquid used when forming the solid pattern 7, as mentioned above, it can be used combining 1 type (s) or 2 or more types, such as water and an organic solvent. At this time, as the liquid used when forming the solid pattern, a liquid in which the coffee stain phenomenon is suppressed can be preferably used as compared with the liquid used when forming the line-shaped liquid.

  From the above viewpoint, it is particularly preferable to include a solvent having a high affinity for the conductive material in the liquid used when forming the solid pattern 7. Thereby, the in-plane variation of the film thickness of the solid pattern I can be more reliably reduced to 30% or less. Here, the “solvent having high affinity with the conductive material” means a solvent capable of dissolving or uniformly dispersing the conductive material. The solvent having a high affinity with the conductive material may be appropriately selected in relation to the conductive material. For example, when fine particles such as a metal are dispersed in an aqueous liquid by modifying a polar group as the conductive material. For example, polyhydric alcohols such as 1,2-hexanediol can be preferably used. In addition, it is also preferable to use a solvent having a higher affinity for the conductive material than the solvent used to form the solid pattern 7 in comparison with the solvent used when forming the parallel line pattern 3.

  FIG. 7 is a plan view for conceptually explaining an example of dividing the conductive material.

  As shown in FIG. 7A, the conductive material is formed by a mesh pattern 6 and a solid pattern 7 formed so as to overlap one end of the mesh pattern 6.

  By subjecting such a conductive material to a treatment that removes the conductive material constituting the conductive material from the substrate 1 as shown in FIG. It is possible to form a new pattern made of the conductive material left on the substrate.

  In the illustrated example, the conductive material is partially removed from both the mesh pattern 6 and the solid pattern 7 to divide each pattern.

  The mesh pattern 6 is subjected to a removal process so as to be divided into a plurality of units. Each unit has a belt-like shape as a whole, and its details are constituted by a mesh-like pattern 6 composed of parallel line patterns 3 and 5 (not shown in FIG. 7). In the illustrated example, the mesh pattern 6 is divided into a plurality of band-like patterns (units) arranged in parallel to each other.

  The solid pattern 7 is subjected to a removal process so as to be a plurality of fine line patterns 8. These fine line patterns 8 are connected to each of the plurality of divided mesh patterns 6 and function suitably as, for example, lead-out wirings.

  Unlike the line segments constituting the parallel line patterns 3 and 5, as described above, these fine line patterns 8 are advantageous in reducing the space and are suitable for space saving.

  The method used for the partial removal treatment of the conductive material is not particularly limited as long as the conductive material in a predetermined region can be selectively removed. For example, a laser method, a photolithography method, etc. Can be preferably exemplified. These can be preferably used for both the mesh pattern 6 and the solid pattern 7.

Various lasers such as an excimer laser, a YAG laser, a CO ₂ laser, and a fiber laser can be used.

In order to selectively remove the conductive material, the conductive material may be processed so as to absorb the wavelength of these lasers, or the surface of a fine line pattern or a solid pattern may be processed.

  FIG. 8 is a plan view conceptually illustrating another example of dividing the conductive material.

  As shown in FIG. 8A, the conductive material overlaps the mesh pattern 6 composed of a plurality of strip-shaped patterns arranged in parallel to each other, and the respective end portions on one side of the plurality of mesh-shaped patterns 6. Thus, the solid pattern 7 is formed.

  Unlike the example of FIG. 7, in the example of FIG. 8, the mesh pattern 6 is patterned by an ink jet method so as to be divided in advance. As described above, the mesh pattern 6 can be formed using the droplet discharge device. However, the droplet application region from the droplet discharge device is set to a plurality of regions (in the illustrated example, a band-shaped region). Thus, the mesh pattern 6 can be formed as a plurality of individually formed units.

  The conductive material is partially removed from the base material 1 by applying a treatment for removing the conductive material constituting the conductive material from the base material 1 as shown in FIG. It is possible to form a new pattern made of the conductive material left on the substrate.

  In the illustrated example, since the mesh pattern 6 is divided in advance, the solid pattern 7 is subjected to a partial removal process of the conductive material to be divided.

  The solid pattern 7 is subjected to a removal process so as to be a plurality of fine line patterns 8. Similar to the example of FIG. 7B, these fine line patterns 8 are connected to each of the plurality of divided mesh patterns 6, and function suitably as, for example, a lead-out wiring.

  Here, the connection portion 80 at the end of the fine line pattern 8 is connected to the mesh pattern 6 over a width equal to or larger than the line width of the fine line pattern 8, more specifically, the mesh pattern. 6 is connected over the whole of one side. The mesh pattern 6 is provided in a band shape, and the fine line pattern 8 is connected to the mesh pattern 6 by a connection portion 80 with a width corresponding to the band width of the band shape. As a result, the fine line pattern 8 can more suitably exhibit the function of reducing the problem caused by the variation in the concentration of the conductive material at the end of the mesh pattern as well as the function of the lead-out wiring.

  FIG. 9 is a perspective cross-sectional view showing an example of parallel line patterns formed on a substrate, and the cross section corresponds to a vertical cross section cut in a direction orthogonal to the direction in which the parallel line patterns are formed. Here, the parallel line pattern 3 in which the metal layer is not laminated immediately after being generated from one line-like liquid will be described.

  The set of two thin lines (line segments) 31 and 32 of the parallel line pattern 3 generated from one line-shaped liquid do not necessarily have to be island-like completely independent from each other. As illustrated, the two line segments 31 and 32 are connected by the thin film portion 30 formed between the line segments 31 and 32 at a height lower than the height of the line segments 31 and 32. It is also preferable that it is formed as a continuous body.

The line widths W1 and W2 of the line segments 31 and 32 of the parallel line pattern 3 are each preferably 10 μm or less. If it is 10 micrometers or less, since it becomes a level which cannot be visually recognized normally, it is more preferable from a viewpoint of improving transparency. Considering the stability of the line segments 31 and 32, the line widths W1 and W2 of the line segments 31 and 32 are preferably in the range of 2 μm or more and 10 μm or less, respectively.

  Note that the widths W1 and W2 of the line segments 31 and 32 are Z, which is the height of the thinnest portion where the thickness of the conductive material is the thinnest between the line segments 31 and 32. When the protruding heights 31 and 32 are defined as Y1 and Y2, they are defined as the widths of the line segments 31 and 32 at half the height of Y1 and Y2. For example, when the pattern 3 has the thin film portion 30 described above, the height of the thinnest portion in the thin film portion 30 can be set to Z. When the height of the thinnest portion of the conductive material between the line segments 31 and 32 is 0, the line widths W1 and W2 of the line segments 31 and 32 are the line segments 31 and 32 from the surface of the substrate 1. Are defined as the widths of the line segments 31 and 32 at half the heights H1 and H2.

  Since the line widths W1 and W2 of the line segments 31 and 32 constituting the parallel line pattern 3 are extremely thin as described above, from the viewpoint of securing the cross-sectional area and reducing the resistance, Higher heights H1 and H2 of the line segments 31 and 32 are desirable. Specifically, the heights H1 and H2 of the line segments 31 and 32 are preferably in the range of 50 nm to 5 μm.

  Furthermore, from the viewpoint of improving the stability of the parallel line pattern 3, the H1 / W1 ratio and the H2 / W2 ratio are preferably in the range of 0.01 to 1 respectively.

  Further, from the viewpoint of further improving the thinning of the parallel line pattern 3, the height Z of the thinnest portion where the thickness of the conductive material is the thinnest between the line segments 31 and 32, specifically, the thinnest portion 30. The height Z of the thin part is preferably in the range of 10 nm or less. Most preferably, the thin film portion 30 is provided in the range of 0 <Z ≦ 10 nm in order to achieve a balance between transparency and stability.

  Further, in order to further improve the thinning of the parallel line pattern 3, the H1 / Z ratio and the H2 / Z ratio are each preferably 5 or more, more preferably 10 or more, and 20 or more. Is particularly preferred.

  The interval P between the line segments 31 and 32 can be appropriately adjusted by setting the application width of the line-like liquid, and is preferably adjusted in the range of 10 μm to 300 μm.

  The interval I between the line segments 31 and 32 is defined as the distance between the maximum protrusions of the line segments 31 and 32.

  Furthermore, it is preferable to give the same shape (similar cross-sectional area) to the line segment 31 and the line segment 32. Specifically, the heights H1 and H2 of the line segment 31 and the line segment 32 are substantially equal. Are preferably equal. Similarly, it is preferable that the line widths W1 and W2 of the line segment 31 and the line segment 32 are substantially equal values.

  The line segments 31 and 32 do not necessarily have to be parallel, and it is sufficient that the line segments 31 and 32 are not coupled over at least a certain length L in the line segment direction. Preferably, the line segments 31 and 32 are substantially parallel over at least a certain length L in the line segment direction.

  The length L of the line segments 31 and 32 in the line segment direction is preferably 5 times or more of the interval I between the line segments 31 and 32, and more preferably 10 times or more. The length L and the interval I can be set corresponding to the formation length and formation width of the pattern (line-shaped liquid) 2.

  The line segments 31 and 32 may be connected and formed as a continuous body at the formation start point and end point of the line-shaped liquid (start point and end point over a certain length L in the line segment direction).

  Further, it is preferable that the line segments 31 and 32 have substantially the same line widths W1 and W2, and the line widths W1 and W2 are sufficiently narrower than the distance between the two lines (interval I).

  Furthermore, it is preferable that the line segment 31 and the line segment 32 which comprise the pattern 3 produced | generated from one line-shaped liquid are formed simultaneously.

  In the parallel line pattern 3, it is particularly preferable that the line segments 31 and 32 satisfy all of the following conditions (a) to (d). As a result, the pattern becomes difficult to be visually recognized, the transparency can be improved, and the line segment is stabilized. In particular, when the conductive material is a conductive material, the effect of reducing the resistance value of the pattern is excellent.

(A) When the height of each line segment 31 and 32 is H1 and H2, and the height of the thinnest part in each line segment is Z, 5 ≦ H1 / Z and 5 ≦ H2 / Z.
(A) When the widths of the line segments 31 and 32 are W1 and W2, W1 ≦ 10 μm and W2 ≦ 10 μm.
(C) When the distance between the line segments 31 and 32 is I, 10 μm ≦ I ≦ 300 μm.
(D) When the heights of the line segments 31 and 32 are H1 and H2, 50 nm <H1 <5 μm and 50 nm <H2 <5 μm.

  The description regarding the parallel line pattern 3 can be applied to the parallel line pattern 5 as described above.

  The use of the base material with a conductive pattern is not particularly limited, and can be used for various devices included in various electronic devices.

  A preferred use of the substrate with a conductive pattern is, for example, as a transparent electrode for various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, etc. It can be suitably used as a transparent electrode used in telephones, electronic paper, various solar cells, various electroluminescence light control elements, and the like.

  Furthermore, the base material with a conductive pattern is suitably used as a transparent electrode of a device. Although it does not specifically limit as a device, For example, a touch panel sensor etc. can be illustrated preferably. Moreover, although it does not specifically limit as an electronic device provided with these devices, For example, a smart phone, a tablet terminal, etc. can be illustrated preferably.

  Particularly in the use of a touch panel sensor, a plurality of strip-like mesh patterns arranged side by side as shown in FIGS. 7B and 8B are preferably used as the X-axis electrode and / or the Y-axis electrode. Can function.

  In the above description, the configuration described for one embodiment can be applied to other embodiments as appropriate.

  Examples of the present invention will be described below, but the present invention is not limited to these examples.

Example 1
<Preparation of ink 1>
Ink 1 having the following composition was prepared.
-Aqueous dispersion of silver nanoparticles (silver nanoparticles: 40% by weight): 1.75% by weight
・ Diethylene glycol monobutyl ether: 20% by weight
・ Pure water: balance

<Preparation of ink 2>
Ink 2 having the following composition was prepared.
-Aqueous dispersion of silver nanoparticles (silver nanoparticles: 40% by weight): 80% by weight
・ 1,2-hexanediol: 20% by weight

<Preparation of substrate>
As the substrate 1, a PET substrate having a surface energy of 52 mN / m by easy adhesion processing (surface treatment) was used.

<Formation of conductive pattern I>
Using an XY robot (“SHOTMASTER300” manufactured by Musashi Engineering) equipped with an inkjet head “512LHX” manufactured by Konica Minolta (standard drop volume 42 pL) and an inkjet control system (“IJCS-1” manufactured by Konica Minolta) A plurality of liquid droplets are sequentially ejected onto the substrate 1 as droplets so that the nozzle row direction pitch is 282 μm and the scanning direction pitch is 45 μm, and the droplets continuously applied in the scanning direction on the substrate are combined. A line-shaped liquid 2 was formed (FIG. 2A).

  In addition, the stage on which the substrate is placed while printing is heated at 70 ° C., and in the process of drying these line-shaped liquids 2, the solid content is deposited on the periphery, so that the conductive material can be obtained from one line-shaped liquid. A parallel line pattern 3 including two line segments 31 and 32 including (in this case, silver nano) was formed (FIG. 2B).

  Next, a line-shaped liquid 4 made of ink 1 is applied on the substrate 1 so as to intersect the parallel line pattern 3 at 90 ° by the same method as described above (FIG. 2C), and the line-shaped liquid 4 In the process of drying, the conductive material (in this case, silver nano) is selectively deposited on the edge to form the parallel line pattern 5 constituted by the two line segments 51 and 52 containing the conductive material. (FIG. 2D).

  At this time, the formation direction of the parallel line pattern 3 is parallel to the short side of the rectangular substrate 1, and the formation direction of the parallel line pattern 5 is parallel to the long side of the rectangular substrate 1.

  As described above, a parallel line pattern I (reference numeral 6) in which the parallel line pattern 3 and the parallel line pattern 5 cross each other was formed. The size of the parallel line pattern I (reference numeral 6) is 100 mm × 100 mm.

  Next, using an XY robot (“SHOTMASTER300” manufactured by Musashi Engineering) equipped with an inkjet head “512LHX” (standard droplet volume 42 pL) manufactured by Konica Minolta, and an inkjet control system (“IJCS-1” manufactured by Konica Minolta) The ink 2 is applied on the material 1 by adjusting the amount of the liquid so that the wet film thickness becomes 10 μm, and dried to obtain the parallel line pattern I (reference numeral 6) as shown in FIG. A solid pattern I (symbol 7) was formed so as to overlap one side of the peripheral edge of) and the other side opposite to the one side.

  Specifically, two solid patterns I (symbol 7) were formed so as to overlap each of two opposing long sides of the parallel line pattern I (symbol 6) formed in a rectangular shape as a whole. The size of the solid pattern I (reference numeral 7) is 10 mm × 100 mm.

  As described above, a conductive pattern I composed of the parallel line pattern I and the solid pattern I was obtained.

<Formation of conductive pattern II>
By performing electrolytic copper plating, a metal layer made of copper was laminated on the parallel line pattern I and the solid pattern I. Next, by applying electrolytic nickel plating, a metal layer made of nickel was further laminated on the metal layer made of copper of the parallel line pattern I and the solid pattern I.

  As described above, a conductive pattern II composed of the parallel line pattern II and the solid pattern II was obtained.

(Example 2)
In Example 1, when forming the solid pattern I, in order to reduce the film thickness increase due to the coffee stain phenomenon at the end of the solid pattern I, as shown in FIG. In the same manner as in Example 1, except that the amount of ink applied to the position corresponding to the outer peripheral portion 71 of the 3 mm portion is 50% of the amount of ink applied to the position corresponding to the interior 72 of the pattern I, the parallel lines A conductive pattern I composed of the pattern I and the solid pattern I was obtained.

  Further, by applying electrolytic copper plating and electrolytic nickel plating to the parallel line pattern I and the solid pattern I of the conductive pattern I in the same manner as in Example 1, the conductive pattern II composed of the parallel line pattern II and the solid pattern II is obtained. Obtained.

(Comparative Example 1)
In Example 1, except that the ink 2 for forming the solid pattern I was changed to the following ink 3, the same as in Example 1 except that the ink 2 was changed to the following ink 3. A conductive pattern I consisting of I was obtained.

<Preparation of ink 3>
Ink 3 having the following composition was prepared.
-Aqueous dispersion of silver nanoparticles (silver nanoparticles: 40% by weight): 80% by weight
・ Diethylene glycol monobutyl ether: 20% by weight

  Further, by applying electrolytic copper plating and electrolytic nickel plating to the parallel line pattern I and the solid pattern I of the conductive pattern I in the same manner as in Example 1, the conductive pattern II composed of the parallel line pattern II and the solid pattern II is obtained. Obtained.

<Evaluation method>
(1) Measurement of film thickness With respect to the solid patterns I and II, optical interference was observed at nine points of intersections of three lines in the vertical direction and three lines in the horizontal direction indicated by broken lines in FIG. The film thickness was measured using a surface roughness measuring instrument of the formula (“WYKO NT9000” manufactured by Veeco). The average value of 9 points was defined as film thickness a1 and a2. Regarding the in-plane variation of the film thickness, the ratio of the maximum value and the minimum value of 9 points was used. Specifically, the in-plane variation (%) of the film thickness was calculated as ([maximum value−minimum value] / maximum value) × 100.

  For the parallel line patterns I and II, the film thicknesses at the intersections of the three lines in the vertical direction and the three lines in the horizontal direction indicated by broken lines in FIG. The average value of 9 points was defined as film thicknesses b1 and b2.

(2) Measurement of resistance unevenness between terminals The solid pattern II was patterned by a laser method and divided into a plurality of fine lines along the long side direction where L / S (line / space) was 0.1 mm / 0.1 mm. The resistance in the long side direction of each thin wire was measured with an ohmmeter, and the ratio between the maximum value and the minimum value was defined as uneven resistance between terminals (corresponding to the above-described uneven conductivity). Specifically, the resistance variation between terminals (%) = ([maximum value−minimum value] / maximum value) × 100. The results are shown in Table 1.

(3) Bonding suitability Alkali-free glass was bonded to the surface of the substrate 1 where the conductive pattern II was formed via “Highly transparent adhesive transfer tape 8146-2” manufactured by 3M. A laminator was used for pasting.
About the laminated body after bonding, bonding suitability was evaluated according to the following evaluation criteria. The results are shown in Table 1.

<Evaluation criteria>
A: A step cannot be visually confirmed at the boundary between the solid pattern II and the parallel line pattern II.
B: A step can be visually confirmed at the boundary between the solid pattern II and the parallel line pattern II.

<Evaluation>
From the results of Examples 1 and 2, the in-plane variation in the film thickness of the solid pattern II was reduced to 30% or less, so that the resistance variation between terminals in the conductive thin wire (lead wiring) formed by dividing the solid pattern II was reduced. It turns out that generation | occurrence | production can be suppressed. In addition, it can be seen that when the ratio a2 / b2 between the film thickness a2 of the solid pattern II and the film thickness b2 of the parallel line pattern II is in the range of 0.5 to 2, the bonding suitability is excellent.

1: Substrate 2: First line-shaped liquid 3: First parallel line pattern 31, 32: Line segment 4: Second line-shaped liquid 5: Second parallel line pattern 51, 52: Line segment 6: Mesh pattern 7: Solid pattern 8: Fine line pattern 80: Connection (leading electrode)
81: Fine wire 82: Fine wire 9: Connection part U: Loop part

Claims (23)

Applying a liquid containing a conductive material on a substrate to form a plurality of line-shaped liquids, and drying the plurality of line-shaped liquids, using the flow inside the line-shaped liquid, The conductive material is deposited on the edge of the line-shaped liquid to form a parallel line pattern composed of two parallel line segments from each line-shaped liquid, and a parallel line pattern composed of a plurality of the parallel line patterns. Form I,
Next, a conductive material is applied on the base material, a solid pattern I is formed so as to overlap at least a part of the end of the parallel line pattern, and the conductive material composed of the parallel line pattern I and the solid pattern I is formed. Forming a sex pattern I,
Next, when the conductive pattern I is formed of the parallel line pattern II and the solid pattern II by laminating one or more metal layers on the parallel line pattern I and the solid pattern I of the conductive pattern I. In addition,
An in-plane variation in the film thickness of the solid pattern II is 30% or less.   2. The method of forming a conductive pattern according to claim 1, wherein a ratio a2 / b2 of the film thickness a2 of the solid pattern II and the film thickness b2 of the parallel line pattern II is set in a range of 0.5-2.   3. The method of forming a conductive pattern according to claim 1, wherein a film thickness a <b> 2 of the solid pattern II and a film thickness b <b> 2 of the parallel line pattern II are in a range of 0.5 μm to 10 μm.   The method for forming a conductive pattern according to claim 1, wherein an in-plane variation in film thickness of the solid pattern I is set to 30% or less.   The ratio a1 / b1 between the film thickness a1 of the solid pattern I and the film thickness b1 of the parallel line pattern I is set in a range of 0.5 to 2, according to any one of claims 1 to 4. Of forming a sex pattern.   The method for forming a conductive pattern according to claim 1, wherein the parallel line pattern I is formed in a mesh shape.   The method for forming a conductive pattern according to claim 1, wherein the solid pattern II is divided into a plurality of thin lines.   8. The method for forming a conductive pattern according to claim 7, wherein the method of dividing the solid pattern II into a plurality of thin lines is a laser method or a photolithography method.   The method for forming a conductive pattern according to claim 1, wherein the parallel line pattern II is divided into a plurality of units.   10. The method for forming a conductive pattern according to claim 9, wherein the method of dividing the parallel line pattern II into a plurality of units is a laser method or a photolithography method.   The method of forming a conductive pattern according to claim 1, wherein the parallel line pattern I is formed as a plurality of units.   12. The method of forming a conductive pattern according to claim 11, wherein the method of forming the parallel line pattern I as a plurality of units is an ink jet method.   The method for forming a conductive pattern according to any one of claims 1 to 12, wherein a method of laminating at least one metal layer on the parallel line pattern I and the solid pattern I is a plating method. .   When the solid pattern I is formed by applying ink containing the conductive material on the base material, the amount of ink to be applied to a position corresponding to the outer peripheral portion of the solid pattern I is set to the inside of the solid pattern I. The method for forming a conductive pattern according to claim 1, wherein the amount of ink applied to a position corresponding to is in a range of 20% to 70%.   A solvent having a high affinity for the conductive material is contained in the ink when the solid pattern I is formed on the substrate by applying an ink containing the conductive material. The formation method of the electroconductive pattern in any one of 1-14. A conductive material that overlaps at least a part of an end of the parallel line pattern, and a parallel line pattern I having a plurality of parallel line patterns each including two parallel line segments containing the conductive material on a base material A conductive pattern I comprising a solid pattern I containing is formed,
Further, one or more metal layers are laminated on the parallel line pattern I and the solid pattern I of the conductive pattern I to form a conductive pattern II including the parallel line pattern II and the solid pattern II. And
An in-plane variation in film thickness of the solid pattern II is 30% or less.   The conductive pattern according to claim 16, wherein a ratio a2 / b2 between the thickness a2 of the solid pattern II and the thickness b2 of the parallel line pattern II is in the range of 0.5-2.   18. The conductive pattern according to claim 16, wherein the film thickness a <b> 2 of the solid pattern II and the film thickness b <b> 2 of the parallel line pattern II are in the range of 0.5 μm to 10 μm.   The conductive pattern according to claim 16, wherein an in-plane variation in film thickness of the solid pattern I is 30% or less.   The ratio a1 / b1 between the film thickness a1 of the solid pattern I and the film thickness b1 of the parallel line pattern I is in the range of 0.5 to 2, and the conductive according to any one of claims 16 to 19 Sex pattern.   21. The conductive pattern according to claim 16, wherein the parallel line pattern I is formed in a mesh shape.   The conductive pattern according to any one of claims 16 to 21, wherein the parallel line pattern II is divided into a plurality of units.   23. A method of forming a conductive pattern, comprising dividing the solid pattern II provided in the conductive pattern according to any one of claims 16 to 22 into a plurality of fine lines.

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