JP2017066483A - Film deposition apparatus and method using magnetron sputtering technique - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus which forms a coating having higher hardness than that of the conventional apparatus.SOLUTION: In a magnetron sputtering apparatus 10, when sputtering particles struck out from a surface to be sputtered of a target 162 of a magnetron cathode 16 pass through plasma 300 by arc discharge generated by thermoelectrons discharged from a filament 22 provided between the surface to be sputtered of the target 162 and a surface to be treated of an object to be treated 100, the sputtering particles are activated and ionized to adhere to the surface to be treated of the object to be treated 100 at high energy.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming apparatus and a film forming method using a magnetron sputtering method.

  In the film forming apparatus and the film forming method by the magnetron sputtering method, the magnetron cathode having the target and the object to be processed are in a vacuum chamber so that the surface to be sputtered of the target and the surface to be processed of the object are opposed to each other. It is provided in the inside. Then, a discharge gas is introduced into the vacuum chamber. Then, using the vacuum chamber as the anode and the magnetron cathode as the cathode, sputtering power (also referred to as target power) is supplied to both of them. Then, the discharge gas is discharged, and plasma is generated in the vicinity of the surface of the target, specifically, the exposed surface to be sputtered. This plasma discharge mode is a high voltage, small current glow discharge. Then, ions in the plasma collide with the surface to be sputtered of the target, and target particles are knocked out from the surface to be sputtered. The sputtered particles knocked out from the target surface of the target fly toward the surface to be processed of the object to be processed, and adhere to and accumulate on the surface to be processed. As a result, a film containing sputtered particles as a component is formed on the surface to be processed of the object to be processed. As described above, the generation of plasma near the surface to be sputtered of the target is caused by the action of a magnetic field formed by, for example, a permanent magnet as a magnetic field forming unit incorporated in the magnetron cathode. By concentrating the plasma in the vicinity of the target surface to be sputtered in this way, the sputtering efficiency of the surface to be sputtered can be improved, and the film formation rate can be improved. Further, by introducing a reactive gas having a property of reacting with the sputtered particles into the vacuum chamber, formation of a compound film that is these compounds is realized.

  As a film forming technique by such a magnetron sputtering method, there has been conventionally disclosed, for example, in Patent Document 1. According to this prior art, it is said that a transparent electrode made of ITO (Indium Tin Oxide: indium tin oxide) can be formed, but naturally, a film other than the ITO can also be formed. It is understood. Further, according to this conventional technique, by driving the magnetic field generation unit as the magnetic field forming means in a horizontal plane that is a plane perpendicular to the front and back direction of the target, the consumption of the target can be made uniform. It is said that. Furthermore, according to this conventional technique, it is possible to reduce the absolute value and fluctuation of the sheath voltage by appropriately limiting the drive region of the magnetic field generator, and thus form a uniform film with less damage. It is supposed to be possible.

JP 2012-251233 A

  However, in the prior art, since most of the sputtered particles are neutral with relatively low energy, it is not possible to form a highly hard coating. For example, a titanium nitride (TiN) film and a chromium nitride (CrN) film known as coatings for molds and cutting tools can only be formed with a hardness of about 400HK to 700HK (Knoop hardness). Such a soft coating is insufficient for the mold and the cutting tool.

  Therefore, an object of the present invention is to provide a film forming apparatus and a film forming method by a magnetron sputtering method capable of forming a film having a higher hardness than conventional ones.

  In order to achieve this object, the present invention includes a first invention related to a film forming apparatus using a magnetron sputtering method and a second invention related to a film forming method using the magnetron sputtering method.

  Among these, the 1st invention is equipped with the vacuum chamber in which a to-be-processed object is accommodated. A magnetron cathode is provided in the vacuum chamber. The magnetron cathode has a target, and is provided in the vacuum chamber so that the surface to be sputtered of the target faces the surface to be processed of the object to be processed. Discharge gas introduction means for introducing the discharge gas into the vacuum chamber is also provided. In addition, there is also provided a sputtering power supply means for supplying sputtering power to both the vacuum chamber as an anode and the magnetron cathode as a cathode. When this sputtering power is supplied, the discharge gas is discharged, and plasma is generated in the vicinity of the surface to be sputtered of the target. The plasma discharge mode is glow discharge. Then, ions in the plasma collide with the surface to be sputtered of the target, and target particles are knocked out from the surface to be sputtered. The sputtered particles knocked out from the target surface of the target fly toward the surface to be processed of the object to be processed, and adhere to and accumulate on the surface to be processed. As a result, a film containing sputtered particles as a component is formed on the surface to be processed of the object to be processed. In addition, the first invention further includes a filament and a discharge power supply means. Of these, the filament is provided between the surface to be sputtered of the target and the surface to be processed of the object, and is heated by receiving the supply of thermionic emission power to emit thermoelectrons. Then, the discharge power supply means supplies the discharge power to both the vacuum chamber as an anode and the filament as a cathode. Thereby, the thermoelectrons emitted from the filament are accelerated, and arc discharge is induced around the filament.

  That is, according to the first aspect of the invention, the filament is provided between the target surface to be sputtered and the target surface to be processed. An arc discharge is induced around the filament. In short, in addition to the plasma due to the glow discharge described above, extremely high density plasma due to the arc discharge with a low voltage and large current is generated between the target surface to be processed and the target surface to be processed. Accordingly, the sputtered particles struck out from the target sputtering surface pass through the extremely high-density plasma generated by this arc discharge while flying toward the processing surface of the workpiece. As a result, the sputtered particles are activated and further ionized to have energy higher than at least the neutral state. The sputtered particles having high energy adhere to and accumulate on the surface to be processed of the object to be processed, so that a high hardness film is formed on the surface to be processed.

  Note that the filament is desirably provided along the surface to be sputtered with an appropriate distance from the surface to be sputtered of the target. According to this configuration, arc discharge having a uniform intensity is formed along the surface to be sputtered of the target. In particular, this greatly contributes to uniforming the properties (film quality) and thickness (film thickness) of the coating.

  The distance between the filament and the target surface to be sputtered is preferably 5 mm to 50 mm. For example, if this distance is excessively small, the filament and the surface to be sputtered of the target may come into contact with each other, which is extremely inconvenient. In particular, when the filament is thermally deformed, the fear becomes remarkable. Therefore, it is desirable that the distance between the filament and the surface to be sputtered of the target is 5 mm or more. On the other hand, if the distance is excessively large, the magnetic field around the filament becomes weak and it is difficult to induce arc discharge. Therefore, the distance is desirably 50 mm or less.

  In addition, a plurality of filaments may be provided. By providing a plurality of filaments in this way, the arc discharge is enhanced, that is, the plasma density is further increased by the arc discharge, and the activation and ionization of the sputtered particles are promoted.

  In addition, bias power supply means for supplying a bias power to both the vacuum chamber as the anode and the workpiece as the cathode may be further provided. According to this configuration, the sputtered particles flying toward the surface to be processed of the object to be processed, particularly the ionized sputtered particles, are accelerated, and the coating film is further increased in hardness. This is particularly useful in the formation of the compound film described below.

  In the formation of the compound film, a reactive gas introducing means for introducing a reactive gas having a property of reacting with the sputtered particles into the vacuum chamber is further provided. According to this configuration, the reactive gas introduced into the vacuum chamber is ionized by the plasma. The ionized reactive gas particles and the ionized sputtered particles react with each other to form a compound film of these compounds as a coating. In the formation of such a compound film, a configuration provided with the above-described bias power supply means, that is, a configuration in which ionized sputtered particles are accelerated toward the surface to be processed is extremely useful. In addition, according to the first invention, since ionization of sputtered particles is promoted as described above, this is also extremely useful in forming a compound film.

  Further, the sputtering force includes DC power, high frequency power, pulse power, or high output high impulse power. For example, when the target is a conductive material such as metal, DC power is employed as the sputtering power. Even if the target is a conductive substance, when the film to be formed is the above-described compound film and an insulating film, high frequency power, pulse power, or high output high impulse power is employed. This is to prevent the occurrence of abnormal discharge due to the formation of the insulating coating on the portion other than the erosion region of the surface to be sputtered of the target. Here, the high frequency power is sine wave power having a frequency of 13.56 MH. The pulse power is, for example, a bipolar pulse power in which the voltage component alternates between a positive potential and a negative potential with reference to the ground potential (usually connected to a vacuum chamber), or the voltage component is This is a unipolar pulse power that alternates between a ground potential and a negative potential, and the waveform of the voltage component is generally a rectangular wave, but other than that, for example, a triangular wave or a sawtooth wave There may be. The high output high impulse power is an extremely large power value (several tens of kW to several tens of Hz) instantaneously (over a period of several μs to several tens μs) and periodically (with a frequency of several tens to several hundreds of Hz). In recent years, it has attracted particular attention. According to this high output high impulse power, for example, it is known that ionization of sputtered particles is promoted even if the above-described arc discharge is not induced. Therefore, further acceleration of ionization of the sputtered particles is expected by combining the high output high impulse power with the above-mentioned arc discharge, that is, hybridization, and further increase in hardness of the coating is expected. It is expected to reduce the temperature during processing and improve the deposition rate. Note that when the object to be processed is a conductive substance, high-frequency power is employed.

  The second invention relates to the film forming method by the magnetron sputtering method as described above, and is a method invention corresponding to the first invention. That is, according to the second aspect of the present invention, the discharge is performed inside the vacuum chamber provided with the magnetron cathode having the target and the target object so that the target surface to be processed and the target surface of the target object face each other. A discharge gas introduction process for introducing a working gas is provided. In addition, a sputtering power supply process for supplying sputtering power to both the vacuum chamber as the anode and the magnetron cathode as the cathode is also provided. When this sputtering power is supplied, the discharge gas is discharged, and plasma due to glow discharge is generated in the vicinity of the surface to be sputtered of the target. Then, ions in the plasma collide with the surface to be sputtered of the target, and target particles are knocked out from the surface to be sputtered. The sputtered particles knocked out from the target surface of the target fly toward the surface to be processed of the object to be processed, and adhere to and accumulate on the surface to be processed. As a result, a film containing sputtered particles as a component is formed on the surface to be processed of the object to be processed. In addition, the second invention further includes a thermal electron emission process and an arc discharge induction process. In the thermal electron emission process, thermionic emission power is supplied to the filament provided between the target surface to be sputtered and the surface to be processed. As a result, the filament is heated and thermoelectrons are emitted from the filament. In the thermal electron emission process, the vacuum chamber is used as an anode and the filament is used as a cathode, and electric power for discharge is supplied to both of them. Thereby, the thermoelectrons emitted from the filament are accelerated, and arc discharge is induced around the filament.

  According to such a second invention, as in the first invention, the sputtered particles struck from the target surface to be sputtered are extremely high due to arc discharge while flying toward the surface to be processed. Passes through a dense plasma. As a result, the sputtered particles are activated and further ionized to have energy higher than at least the neutral state. The sputtered particles having high energy adhere to and accumulate on the surface to be processed of the object to be processed, so that a high hardness film is formed on the surface to be processed.

  As described above, according to the present invention, it is possible to form a highly hard film, and more specifically, it is possible to form a film having a higher hardness than in the past. This was confirmed by experiments as described later.

It is an illustration figure which shows schematic structure of the magnetron sputtering device which concerns on one Embodiment of this invention. It is the illustration figure which looked at the inside of the same magnetron sputtering device from the upper part. It is an illustration figure which shows schematic structure of the magnetron cathode in the same embodiment. It is an illustration figure which shows the mutual positional relationship of the same magnetron cathode and a filament. It is a graph which shows the relationship between the pressure in a vacuum chamber in the same embodiment, a substrate bias current, and a discharge current side by side with a comparison object. It is a figure which shows the detail of the experiment in the same embodiment. It is a figure which shows the observation image by the scanning electron microscope of the cross section of the titanium nitride film formed by another experiment in the embodiment. It is a figure which shows the detail of another experiment in the same embodiment. It is an illustration figure which shows the range of the pressure in a vacuum chamber in the embodiment side by side with a comparison object. It is a graph which shows the relationship of each of the sputtering voltage and the sputtering current with respect to the discharge current in the same embodiment.

  An embodiment of the present invention will be described in detail below.

  As shown in FIGS. 1 and 2, the magnetron sputtering apparatus 10 according to the present embodiment includes a substantially cylindrical vacuum chamber 12 whose both ends are closed. The vacuum chamber 12 is installed in a state where the portions corresponding to both ends of the cylindrical shape are directed up and down, that is, in a state where the central axis Xa of the cylindrical shape is extended in the vertical direction. The inner diameter of the vacuum chamber 12 is about 1100 mm, for example, and the height dimension in the vacuum chamber 12 is about 800 mm, for example. The shape and dimensions of the vacuum chamber 12 are merely examples, and are appropriately determined according to various situations such as the size and number of objects to be processed 100 described later. The vacuum chamber 12 itself is made of a metal having high corrosion resistance and high heat resistance, for example, stainless steel such as SUS304, and its wall portion is connected to a ground potential as a reference potential.

  An exhaust port 14 is provided at an appropriate position of the wall of the vacuum chamber 12, for example, a position slightly outward (leftward in FIG. 1) from the center of the wall forming the lower surface. The exhaust port 14 is connected to a vacuum pump as an exhaust means (not shown) via an exhaust pipe (not shown) outside the vacuum chamber 12. The vacuum pump also functions as a pressure control unit that controls the pressure P in the vacuum chamber 12. In addition, an automatic pressure control device (not shown) is provided in the middle of the exhaust pipe, and this automatic pressure control device also functions as a pressure control means.

  Further, a magnetron cathode 16 is disposed at an appropriate position inside the wall portion that forms the side surface of the vacuum chamber 12 (a position on the right side in FIGS. 1 and 2) while being electrically insulated from the vacuum chamber 12. ing. Referring also to FIG. 3, the magnetron cathode 16 includes a target 162 having a substantially rectangular flat plate shape, and a magnet unit 164 provided on the back side which is one main surface of the target 162. The magnet unit 164 includes a permanent magnet 166 as a magnetic field forming unit, and a housing 168 that houses the permanent magnet 166. Further, the permanent magnet 166 is, for example, an N pole 166a as a substantially rectangular frame-shaped one magnetic pole provided so as to be along the periphery of the target 162 while being in close contact with the back surface of the target 162, and a target inside the N pole 166a. And an S pole 166b as the other magnetic pole having a substantially rectangular bar shape provided so as to extend along the longitudinal direction of the target 162 while being in close contact with the back surface of the target 162. The dimensions of the target 162 are, for example, a longitudinal direction (length dimension) of 457 mm, a short side direction (width dimension) of 127 mm, and a thickness direction (thickness dimension) of 8 mm. A gap 166c having a substantially rectangular groove shape is provided between the N pole 166a and the S pole 166b of the permanent magnet 166. The housing 168 is attached with, for example, a water cooling mechanism as a cooling means (not shown) for cooling the entire magnetron cathode 16 including the housing 168.

  In the magnetron cathode 16, the surface to be sputtered which is the other main surface (front surface) of the target 162 is directed to the central axis Xa of the vacuum chamber 12, and the longitudinal direction of the target 162 is along the central axis Xa of the vacuum chamber 12. That is, they are arranged so as to extend along the vertical direction. The magnetron cathode 16 is covered with the earth shield 18 except for the surface to be sputtered of the target 162, in other words, with the surface to be sputtered exposed. The earth shield 18 is made of a metal having high corrosion resistance and high heat resistance, for example, stainless steel such as SUS304. The earth shield 18 is electrically insulated from the magnetron cathode 16 and is electrically connected to the vacuum chamber 12. As shown in FIG. 2, the portion 12 a of the wall portion of the vacuum chamber 12 where the magnetron cathode 16 and the earth shield 18 are provided has a structure suitable for providing the magnetron cathode 16 and the earth shield 18. It is desirable that In particular, it is desirable that the portion 12a can be opened and closed like a sliding door or a hinged door in consideration of workability during maintenance of the magnetron cathode 16 including replacement of the target 162.

  As shown in FIG. 1, the magnetron cathode 16 is connected to a DC power supply device 20 as a sputtering power supply means outside the vacuum chamber 12. The magnetron cathode 16 is supplied with DC power having a negative potential with respect to the ground potential as the sputtering power Es from the DC power supply device 20. In other words, with the vacuum chamber 12 as the anode and the magnetron cathode 16 as the cathode, the sputtering power Es is supplied to both of them. Note that the DC power supply device 20 that is a supply source of the sputtering power Es has a constant power mode that operates so that the power value of the sputtering power Es is constant, and a so-called sputtering voltage that is a voltage component of the sputtering power Es. Alternatively, it is also referred to as a target voltage.) A constant voltage mode that operates so that Vs is constant, and a current component of the sputtering power Es, that is, a sputtering current (also referred to as target current) Is, is operated so as to be constant. There are three operation modes, the constant current mode, and here, the operation is set to operate in the constant power mode.

  In addition, a filament 22 as a thermal electron emission means is provided in front of the magnetron cathode 16, specifically in front of the surface to be sputtered of the target 162. The filament 22 is a linear linear body having a diameter of about 1 mm, for example, and the material thereof is made of a refractory metal such as tungsten (W). Here, referring also to FIG. 4 and particularly referring to FIG. 4 (a), the filament 22 is separated from the direction opposite to the direction in which the magnetron cathode 16 is disposed, for example, the vacuum chamber 12. When viewed from above the central axis Xa, the center of the sputtering target surface of the target 162 is provided so as to extend along the vertical direction, that is, along the longitudinal direction of the target 162. In particular, as shown in FIG. 4B, the filament 22 has a predetermined distance D between the target 162 and the surface to be sputtered. As will be described later, this distance D is suitably 5 mm to 50 mm, for example 10 mm. The length dimension of the filament 22 is equal to or greater than the length dimension of the target 162, strictly speaking, is equal to or greater than the length dimension of an erosion region 162a described later of the target 162, for example, 500 mm. It is.

  Referring again to FIG. 1, the filament 22 is connected outside the vacuum chamber 12 to, for example, an AC power supply device 24 as thermionic emission power supply means. The filament 22 receives the supply of the cathode power Ec as the thermoelectron emission power from the AC power supply device 24 and is heated to 2000 ° C. or more to emit thermoelectrons. The cathode power Ec is not limited to AC power but may be DC power.

  Furthermore, the filament 22 is connected to a DC power supply 26 different from the above as a discharge power supply means outside the vacuum chamber 12. The filament 22 is supplied with DC power having a negative potential with respect to the ground potential as the discharge power Ed from the DC power supply device 26. In other words, with the vacuum chamber 12 as the anode and the filament 22 as the cathode, the electric power Ed for discharge is supplied to both of them. Note that the DC power supply device 26 that is a supply source of the discharge power Ed also operates so that the power value of the discharge power Ed is constant, like the DC power supply device 20 as the above-described sputtering power supply means. The constant power mode, the constant voltage mode that operates so that the discharge voltage Vd that is the voltage component of the discharge power Ed is constant, and the discharge current Id that is the current component of the discharge power Ed are constant. There are three operation modes: a constant current mode that operates as described above. However, the DC power supply device 26 as the discharging power supply means is set to operate in the constant voltage mode.

  When attention is paid to the inside of the vacuum chamber 12 from the position where the filament 22 is provided, a plurality of objects to be processed 100, 100,. Specifically, the objects to be processed 100, 100,... Are arranged at equal intervals along the circumferential direction of a circle centered on the central axis Xa of the vacuum chamber 12. Each object to be processed 100 is an elongated cylindrical shape such as a drill blade, for example, and extends along the vertical direction, that is, extends along the central axis Xa of the vacuum chamber 12. It is held by a holder 28 as holding means. Each holder 28 is coupled to the vicinity of the periphery of the disk-shaped revolving table 32 via a gear mechanism 30. The center of the revolving table 32 is located on the central axis Xa of the vacuum chamber 12, and one end of a rotating shaft 34 extending along the central axis Xa of the vacuum chamber 12 is at the center of the revolving table 32. It is fixed. The other end of the rotating shaft 34 is coupled to a shaft 36a of a motor 36 as a rotation driving means outside the vacuum chamber 12.

  That is, when the motor 36 is driven and the shaft 36a of the motor 36 rotates in the direction indicated by the arrow 200 in FIG. 1, for example, the revolving table 32 rotates in the same direction, that is, in the direction indicated by the arrow 200 in FIG. Rotate. In connection with this, each to-be-processed object 100 rotates centering on the central axis Xa of the vacuum chamber 12, and, in other words, revolves. In addition, due to the rotational driving force transmission action by each gear mechanism 30, each holder 28 rotates about the vertical line Xb passing through it in the direction indicated by the arrow 202 in each of FIGS. As the holder 28 itself rotates, the workpiece 100 also rotates in the same direction, that is, rotates. In addition, the diameter (PCD; Pitch Circle Diameter) of the revolution path | route of the to-be-processed object 100 is about 600 mm, for example. And the revolution speed (the rotational speed of the revolution base 32) of the to-be-processed object 100 is 0.5 rpm-1 rpm, for example. On the other hand, the rotation speed of the workpiece 100 (the rotation speed of the holder 28 itself) is, for example, 30 rpm to 60 rpm, that is, 60 times the revolution speed. In FIG. 1 and FIG. 2, twelve workpieces 100, 100,... (Holders 28, 28,... And gear mechanisms 30, 30,...) Are provided, but this number is an example. Other numbers may be used.

  In addition, each workpiece 100 is supplied with a substrate bias from a pulse power supply 38 as a bias power supply means outside the vacuum chamber 12 via a holder 28, a gear mechanism 30, a revolving table 32, and a rotating shaft 34. Electric power Eb is supplied. The substrate bias power Eb is a voltage component, that is, the substrate bias voltage Vb is alternately switched between a positive high potential voltage with reference to the ground potential and a negative low potential voltage with respect to the ground potential. This is so-called bipolar pulse power that transitions to. The high level voltage of the substrate bias voltage Vb is constant, for example, +37 V with respect to the ground potential. On the other hand, the low level voltage of the substrate bias voltage Vb can be arbitrarily adjusted, and the average value (DC converted value) of the substrate bias voltage Vb can be arbitrarily set by the low level voltage. Furthermore, the frequency of the substrate bias power Eb can also be arbitrarily set within a range of 50 kH to 250 kH, for example. The duty ratio of the substrate bias power Eb (the ratio of the period during which the substrate bias voltage Vb becomes a high level voltage in one cycle of the substrate bias voltage Vb) can also be arbitrarily set. Here, the frequency of the substrate bias power Ed is, for example, 100 kHz, and the duty ratio is, for example, 30%.

  Furthermore, it is an appropriate position inside the wall portion that forms the side surface of the vacuum chamber 12, and a position outside the revolving path of the workpieces 100, 100,... (The left position in FIGS. 1 and 2), For example, a carbon heater 40 is provided as temperature control means. The carbon heater 40 is connected to a heater heating power source (not shown) outside the vacuum chamber 12. The carbon heater 40 receives heat from the heater heating power supply to supply DC or AC heater heating power, and heats the workpieces 100, 100,. As shown in FIG. 2, the portion 12b of the wall portion of the vacuum chamber 12 where the carbon heater 40 is provided is also similar to the portion 12a where the magnetron cathode 16 and the earth shield 18 are provided. It is desirable to have a structure suitable for providing the carbon heater 40.

Further, as shown in FIG. 1, it is also used as a discharge gas introduction means, a cleaning gas introduction means, and a reactive gas introduction means at an appropriate position on the wall of the vacuum chamber 12, preferably in the vicinity of the filament 22. A gas introduction pipe 42 is provided. That is, the gas introduction tube 42 is provided in the vacuum chamber 12 with, for example, argon (Ar) gas as a discharge gas, hydrogen (H ₂ ) gas as a cleaning gas, and nitrogen (N) as a reactive gas. ₂ ) For introducing gas. Although not shown in the figure, the gas introduction pipe 42 has an open / close valve as an open / close means for individually opening and closing the flow of each gas outside the vacuum chamber 12, and a flow rate of each gas individually. And a mass flow controller as a flow rate control means for controlling.

  According to the magnetron sputtering apparatus 10 having such a configuration, it is possible to form a coating film having a higher hardness than the conventional one. For example, the case where a titanium nitride film is formed as the coating will be described. In this case, the target 162 is made of titanium.

First, the workpieces 100, 100,... Are installed in the vacuum chamber 12 (holders 28, 28,...). Then, the inside of the vacuum chamber 12 is evacuated by a vacuum pump, and is evacuated until the pressure P becomes about 2 × 10 ⁻³ Pa, for example. After this so-called evacuation, the motor 36 is driven and the workpieces 100, 100,. Then, heater heating power is supplied to the carbon heater 40, and the workpieces 100, 100,... Are heated to, for example, about 150 ° C. Thereby, the impurity gas contained in the workpieces 100, 100,... Is discharged, and so-called degassing processing is performed.

  After the degassing process is performed for a predetermined time, the supply of the heater heating power to the carbon heater 40 is stopped, and then the discharge cleaning process is performed. In this discharge cleaning process, the cathode power Ec is supplied to the filament 22. Thereby, the filament 22 is heated and thermoelectrons are emitted from the filament 22. At the same time, the discharge power Ed is supplied to the filament 22. That is, using the vacuum chamber 12 as an anode and the filament 22 as a cathode, the discharge power Ed is supplied to both of them. Thereby, the thermoelectrons emitted from the filament 22 serving as the cathode are directed toward the wall of the vacuum chamber 12 serving as the anode, particularly at a position close to the filament 22 and having the same potential as the vacuum chamber 12. To be accelerated. In this state, when an argon gas as a discharge gas is introduced into the vacuum chamber 12 through the gas introduction tube 42, the accelerated electrons collide with the argon gas particles, and the impact causes the argon gas. The particles are ionized and a plasma 300 is generated. Here, since the magnetic field by the permanent magnet 166 described above is formed in the vicinity of the surface to be sputtered of the target 162 including the periphery of the filament 22, the thermoelectrons emitted from the filament 22 cause the action of this magnetic field. In response to the spiral movement (cycloid movement or trochoidal movement). Thereby, the frequency with which a thermal electron collides with argon gas particles increases, and the plasma 300 is densified. Such a discharge mode of the plasma 300 is a low-voltage high-current arc discharge. Further, hydrogen gas as a cleaning gas is introduced into the vacuum chamber 12 through the gas introduction pipe 42. Then, the hydrogen gas particles are also ionized to form a plasma 300. The introduction of argon gas into the vacuum chamber 12 and the introduction of hydrogen gas into the vacuum chamber 12 may be started simultaneously.

  When the substrate bias power Eb is supplied to each object to be processed 100 in a state where the plasma 300 is generated by the arc discharge in this way, argon ions and hydrogen ions in the plasma 300 are converted into each object to be processed. It is positively incident on the surface of 100, strictly, the surface to be processed that is exposed. As a result, impurities are removed from the surface to be processed 100 of each object to be processed 100 by the sputtering action by argon ions and the chemical reaction action by hydrogen ions, that is, a discharge cleaning process is performed. Since each object 100 revolves and revolves as described above, the discharge cleaning process is performed when the object 100 is exposed to the plasma 300 during the revolving and revolving process. The same applies to the film forming process described later.

  In this cleaning process, the flow rate of argon gas is, for example, 50 mL / min, and the flow rate of hydrogen gas is also, for example, 50 mL / min. And the pressure P in the vacuum chamber 12 is maintained at 0.2 Pa, for example. Further, the discharge power Ed is set to 1000 W, for example. Specifically, the DC power supply 26 that is the supply source of the discharge power Ed operates in the constant voltage mode as described above so that the discharge voltage Vd that is a voltage component of the discharge power Ed becomes 50V. In this state, the heating temperature of the filament 22 is controlled by the cathode power Ec so that the discharge current Id, which is the current component of the discharge power Ed, becomes 20 A, that is, the amount of thermoelectrons emitted from the filament 22 is reduced. Be controlled. In addition, for the substrate bias power Eb, the substrate bias voltage (average voltage value) Vb, which is the voltage component, is set to −600V.

  After this discharge cleaning process is performed for a predetermined time, the introduction of hydrogen gas into the vacuum chamber 12 is stopped. Then, a film forming process for forming a titanium nitride film is performed. For this purpose, first, the sputtering power Es is supplied to the magnetron cathode 16. That is, using the vacuum chamber 12 as an anode and the magnetron cathode 16 as a cathode, a sputtering power Es is supplied to both of them. Note that the DC power supply device 20 serving as a supply source of the sputtering power Es operates in the constant power mode so that the sputtering power Es is constant as described above. Then, argon ions in the plasma 300 collide with the surface to be sputtered of the target 162 of the magnetron cathode 16, and titanium particles are knocked out (sputtered) from the surface to be sputtered of the target 162 by the impact. Then, the titanium particles knocked out from the surface to be sputtered of the target 162 fly toward the object to be processed 100 and enter the surface to be processed of the object to be processed 100. The titanium particles incident on the surface to be processed 100 are gradually deposited, and as a result, a titanium film is formed on the surface to be processed 100. Moreover, although not understood from each figure, glow discharge is induced in the vicinity of the surface to be sputtered of the target 162 by supplying the sputtering power Es. That is, the plasma 300 includes a component due to the arc discharge described above and a component due to the glow discharge.

  Further, nitrogen gas as a reactive gas is introduced into the vacuum chamber 12 through the gas introduction pipe 42. Then, this nitrogen gas is also ionized to form plasma 300. The nitrogen ions in the plasma 300 are incident on the surface to be processed 100 of the object 100 to be processed. Nitrogen ions incident on the surface to be processed 100 of the object to be processed 100 react with titanium particles, particularly titanium ions, incident on the surface to be processed of the object 100 to be processed. As a result, a titanium nitride film that is a compound of titanium ions and nitrogen ions is formed on the surface to be processed 100 of the object to be processed 100.

  The flow rate of nitrogen gas into the vacuum chamber 12 is gradually increased (continuously or stepwise) over an appropriate time (about several minutes). Thereby, after the titanium film is formed on the surface to be processed 100, an inclined layer of the titanium nitride film in which the content (content ratio) of nitrogen gradually increases is formed. A titanium nitride film having a constant nitrogen content is formed. Thus, by forming the titanium film, the inclined layer, and the titanium nitride film in this order, the adhesion of the titanium nitride film can be improved. Of course, formation of one or both of the titanium film and the gradient layer may be omitted, but it is desirable to form the titanium film and the gradient layer in order to improve the adhesion of the titanium nitride film. The film forming conditions such as the pressure P in the vacuum chamber 12 in this film forming process will be described in detail later.

  After this film forming process is performed for a predetermined time, the introduction of argon gas and nitrogen gas into the vacuum chamber 12 is stopped. At the same time, the supply of the sputtering power Es to the magnetron cathode 16 is stopped, and the supply of the substrate bias power Eb to the workpieces 100, 100,. Further, the supply of the cathode power Ec to the filament 22 is stopped, and the supply of the discharge power Ed to the filament 22 is stopped. Thereby, the plasma 300 disappears. Then, a constant cooling period is set while the pressure in the vacuum chamber 12 is gradually returned to near atmospheric pressure. Then, the drive of the motor 36 is stopped and the self-revolution of the workpieces 100, 100,. Then, the inside of the vacuum chamber 12 is opened to the outside, and the workpieces 100, 100,... Are taken out of the vacuum chamber 12 to complete a series of surface treatments.

  Note that, by performing the film forming process by the so-called magnetron sputtering method as described above, an erosion region 162 a that is a sputter mark is formed on the surface to be sputtered of the target 162. As shown in FIG. 4, the erosion region 162 a is formed in a substantially rectangular loop shape (or an oval loop shape) so as to substantially follow the gap 166 c of the permanent magnet 166. The larger the erosion region 162a is, the more economical it is. For this purpose, for example, the permanent magnet 166 may be driven along the back surface of the target 162 as in the above-described prior art. However, since this is not directly related to the gist of the present invention, further explanation is omitted. Further, in the relationship between the erosion region 162a and the filament 22, the filament 22 is equal to or longer than the length of the erosion region 162a (the dimension along the longitudinal direction of the target 162). That's right.

  By the way, according to the present embodiment, titanium particles as sputtered particles struck out from the target surface of the target 162 are extremely high (including components) due to arc discharge while flying toward the workpiece 100. Passes through the dense plasma 300. As a result, the titanium particles are activated and further ionized to have energy higher than at least the neutral state. Then, when the titanium particles having high energy are incident on the surface to be processed 100, the hardness of the titanium nitride film formed on the surface to be processed 100 is increased. In particular, in the formation of a compound film such as a titanium nitride film, it is more advantageous that the amount of ions incident on the surface to be processed 100 is larger, and this embodiment in which ionization of sputtered particles is promoted is extremely useful. It is.

  In order to confirm this, the following experiment was conducted.

  First, after the workpieces 100, 100,... Are installed in the vacuum chamber 12, the vacuum chamber 12 is evacuated. Then, after this evacuation, argon gas is introduced into the vacuum chamber 12. In addition, the cathode power Ec is supplied to the filament 22 and the discharge power Ed is supplied to the filament 22, so that the filament 22 and the ground shield 18, that is, around the filament 22, Plasma 300 is generated by the arc discharge described above. Further, the sputtering power Es is supplied to the magnetron cathode 16, and specifically, the sputtering power Es is set to 4 kW. In addition, the substrate bias power Eb is supplied to the objects to be processed 100, 100,... More specifically, the substrate bias voltage (average voltage value) Vb is set to −100V. As described above, the frequency of the substrate bias power Eb is 100 kHz, and the duty is 30%. Here, the discharge voltage Vd is 50V. The discharge current Id is set to 10 A by the cathode power Ec. In this state, the pressure P in the vacuum chamber 12 is appropriately set within a range of 0.1 Pa to 1.0 Pa. At this time, the current flowing through the workpieces 100, 100,. In other words, the substrate bias current Ib flowing through the substrate is observed. Similarly, the discharge current Id is 20 A, and the substrate bias current Ib in this state is also observed. Further, as a comparison object, the supply of the cathode power Ec and the discharge power Ed to the filament 22 is stopped, whereby a state in which the discharge current Id becomes 0 A is formed, that is, the plasma 300 is generated only by the glow discharge described above. The substrate bias current Ib in this state is also observed.

  The result is shown in FIG. As shown in FIG. 5, for example, in the case of a comparison target (short broken line with a Δ mark) where the discharge current Id is 0 A, the substrate bias current Ib is approximately equal to the pressure P in the vacuum chamber 12. It becomes a substantially constant value of 0.3A. Then, an amount of ions corresponding to the substrate bias current Ib of about 0.3 A is incident on the surface to be processed of the objects 100, 100,. The ions referred to here include both argon ions and titanium ions. On the other hand, for example, when the discharge current Id is 10 A (long broken line with a □ mark), the substrate bias current Ib is much larger than the comparison target in which the discharge current Id is 0 A, Further, the higher the pressure P in the vacuum chamber 12, the larger the substrate bias current Ib becomes. For example, when attention is paid when the pressure P in the vacuum chamber 12 is 0.5 Pa, the substrate bias current Ib when the discharge current Id is 10 A is about 2.5 A, that is, slightly more than eight times the comparison target. This shows that a large amount of ions are incident on the surface to be processed 100, 100,. Further, when the discharge current Id is 20 A (solid line marked with a circle), the substrate bias current Ib is further increased. In this case, the higher the pressure P in the vacuum chamber 12 is, the higher the substrate bias is. The current Ib increases. For example, when attention is paid when the pressure in the vacuum chamber 12 is 0.5 Pa, the substrate bias current Ib when the discharge current Id is 20 A is about 4.1 A, that is, 13 times more than the comparison target. It shows that a larger amount of ions are incident on the surfaces to be processed 100, 100,.

  After confirming this, subsequently, a titanium nitride film was actually formed, and its hardness was particularly examined. Specifically, SCM415 carburized steel (chromium molybdenum steel) having a mirror-polished diameter of 31 mm and a thickness of 3 mm is used as the workpiece 100. Then, a film forming process is performed on the workpiece 100 under the conditions shown in FIG. Prior to the film formation process, the degassing process according to the above-described procedure is performed for about 30 minutes, and then the discharge cleaning process according to the above-described process is performed for about 20 minutes, and then the film formation process is performed. . Further, regarding the discharge power Ed, the discharge voltage Vd, which is the voltage component, is set to 50 V, and the discharge current Id is set to 10 A by adjusting the cathode power Ec, so that the discharge power Ed is set to 500 W. As a comparison object, even when the discharge current Id was 0 A, a titanium nitride film was actually formed, and its hardness was particularly examined.

  As a result, according to this embodiment, a Knoop hardness of 2280HK was obtained, whereas the Knoop hardness according to the comparison object was 400HK. That is, as can be seen from FIG. 6B showing this result in a graph, according to the present embodiment in which the arc discharge is induced, the titanium nitride film having extremely high hardness as compared with the comparative object in which the arc discharge is not induced. In other words, it was confirmed that high hardness of the titanium nitride film can be realized. When attention is paid to the film thickness of FIG. 6A, the film thickness of the present embodiment is 3.7 μm, whereas the film thickness of the comparison object is 5.1 μm. That is, the film thickness of the present embodiment is smaller than the film thickness to be compared. From this, it can be seen that according to the present embodiment, a dense titanium nitride film can be formed as compared with the comparative object, that is, a titanium nitride film having a higher hardness can be formed. The titanium nitride film of this embodiment having a Knoop hardness of 2280HK can be sufficiently practically used for the above-described molds and cutting tools.

  In addition, an experiment was performed in which a silicon (Si) wafer was used as the object to be processed 100 and a titanium nitride film was formed thereon. FIG. 7A shows an image obtained by observing a cross section of a titanium nitride film to be compared with a scanning electron microscope (SEM). FIG. 7B shows an image obtained by observing the cross section of the titanium nitride film of the present embodiment with the same scanning electron microscope. The comparative titanium nitride film shown in FIG. 7A has a rough structure in which elongated fibrous substances are densely packed. However, the titanium nitride film of this embodiment shown in FIG. 7B is extremely dense. It can be clearly seen that it is a structure. From this, it can be seen that according to the present embodiment, a dense titanium nitride film can be formed as compared with the comparative object, that is, a titanium nitride film having a higher hardness can be formed.

  Further, as a coating other than the titanium nitride film, for example, a chromium nitride film was formed, and an experiment was conducted in particular to examine its hardness. Specifically, as in the case of forming the titanium nitride film described with reference to FIG. 7, mirror-polished SCM415 carburized steel having a diameter of 31 mm and a thickness of 3 mm is used as the workpiece 100. Then, a film forming process for forming a chromium nitride film is performed on the workpiece 100 under the conditions shown in FIG. Prior to the film formation process, the degassing process according to the above-described procedure is performed for about 30 minutes, and then the discharge cleaning process according to the above-described process is performed for about 20 minutes, and then the film formation process is performed. . In this film forming process, a chromium target 162 is used. Further, for the discharge power Ed, the discharge voltage Vd is 50 V, and the discharge current Id is 20 A by adjusting the cathode power Ec, so that the discharge power Ed is 1 kW. As a comparison object, even when the discharge current Id was 0 A, a titanium nitride film was actually formed, and its hardness was particularly examined.

  As a result, according to the present embodiment, a Knoop hardness of 1600HK was obtained, whereas the Knoop hardness according to the comparison object was 700HK. That is, as can be seen from FIG. 8B showing the result in a graph, it was confirmed that according to the present embodiment, a chromium nitride film having extremely high hardness can be formed as compared with the comparative object. . When attention is paid to the film thickness of FIG. 8A, the film thickness of the present embodiment is 5.6 μm, whereas the film thickness of the comparison object is 7.8 μm. That is, regarding the chromium nitride film as well, the film thickness of the present embodiment is smaller than the film thickness of the comparison object as in the above-described chromium nitride film. From this, it can be seen that according to the present embodiment, a dense chromium nitride film can be formed as compared with the comparative object, that is, a chromium nitride film having a higher hardness can be formed. The chromium nitride film of this embodiment having a Knoop hardness of 1600 HK can also be sufficiently practical for use in dies and cutting tools.

  As described above, according to the present embodiment, that is, according to the arc discharge type magnetron sputtering apparatus 10 in which the plasma 300 is generated by arc discharge (mainly), in the formation of the titanium nitride film and the chromium nitride film, Their hardness can be increased. The same applies to compound films other than titanium nitride films and chromium nitride films. Moreover, it was confirmed that the same applies not only to the compound film but also to a so-called unit film formed by only one element.

  Furthermore, according to this embodiment, since the plasma 300 is generated by arc discharge, the pressure P in the vacuum chamber 12 can be reduced as compared with the configuration in which the arc discharge is not induced as in the above-described comparison object. it can. Specifically, referring to FIG. 9, for example, for the comparison object, the lower limit value of the pressure P in the vacuum chamber 12 is about 0.1 Pa. On the other hand, according to this embodiment, the vacuum The lower limit value of the pressure P in the tank 12 is 0.015 Pa. Thus, the reduction of the pressure in the vacuum chamber 12 greatly contributes to the improvement of the straightness of ions, and is particularly suitable for collimated sputtering that requires improvement of the straightness of ions.

  In addition, according to this embodiment, since the plasma 300 is generated by arc discharge as described above, the sputtering voltage Vs can be reduced. That is, in the configuration in which arc discharge is not induced as in the above-described comparison object, the plasma 300 is generated by glow discharge by supplying the sputtering power Es. Therefore, in order to improve the density of the plasma 300, a high sputtering voltage Vs is required. It is hung. On the other hand, according to the present embodiment, since the plasma 300 is generated (mainly) by arc discharge, it is not necessary to apply a high sputtering voltage Vs. Accordingly, according to the present embodiment, the sputtering voltage Vs can be reduced.

  Here, FIG. 10 shows the relationship between the sputtering voltage Vs and the sputtering current Is with respect to the discharge current Id when the sputtering power Es is set to 4 kW. As shown in FIG. 10, the sputtering current Is increases as the discharge current Id increases. This is because a part of ions in the plasma 300 including not only glow discharge but also components caused by arc discharge flows into the target 162 (magnetron cathode 16). As the discharge current Id increases, that is, as the sputtering current Is increases, the sputtering voltage Vs decreases. This is because the DC power supply device 20 that is the supply source of the sputtering power Es operates in the constant power mode as described above. This also shows that the sputtering voltage Vs can be reduced according to the present embodiment in which an appropriate discharge current Id flows as the arc discharge is induced.

  When the sputtering voltage Vs is reduced, the energy of electrons incident on the surface to be processed 100, 100,. That is, when the surface to be sputtered of the target 162 is sputtered, not only sputtered particles of the target 162 but also secondary electrons are sputtered from the sputter surface. The secondary electrons also fly toward the workpieces 100, 100,... And enter the processing surfaces of the workpieces 100, 100,. The secondary electrons have an energy corresponding to the sputtering voltage Vs, that is, the higher the sputtering voltage Vs, the larger the energy. Further, there is a concern that the temperature of the workpieces 100, 100,... Increases as the energy of the secondary electrons increases. According to this embodiment, since the sputtering voltage Vs is reduced, the energy of secondary electrons incident on the workpieces 100, 100,... Is also reduced, and as a result, the temperature of the workpieces 100, 100,. Is suppressed. In this respect, the present embodiment is extremely useful.

  Note that this embodiment is one specific example of the present invention and does not limit the scope of the present invention.

  For example, in the present embodiment, DC power is used as the sputtering power Es supplied to the magnetron cathode 16, but is not limited thereto. Specifically, when the target 162 is a conductive material such as metal, the DC power is used. Further, even if the target 162 is a conductive material, when the film to be formed is an insulating film, high frequency power, pulse power, or high output high impulse power is employed. This is to prevent the occurrence of abnormal discharge due to the formation of an insulating film on a portion other than the erosion region 162a of the surface to be sputtered of the target 162. Here, the high frequency power is sine wave power having a frequency of 13.56 MH. The pulse power is, for example, bipolar pulse power in which the voltage component alternately changes between a positive potential and a negative potential with reference to the ground potential, or a unipolar in which the voltage component alternately changes between the ground potential and the negative potential. Although it is pulse power and the waveform of the voltage component is generally a rectangular wave, other waveforms such as a triangular wave or a sawtooth wave may be used. The high output high impulse power is an extremely large power value (several tens of kW to several tens of Hz) instantaneously (over a period of several μs to several tens μs) and periodically (with a frequency of several tens to several hundreds of Hz). In recent years, it has attracted particular attention. According to this high output high impulse power, it is known that ionization of sputtered particles is promoted even if arc discharge is not induced. Therefore, further acceleration of ionization of the sputtered particles is expected by so-called hybrid combining this high output high impulse power and arc discharge, and further increase in hardness of the coating is expected. A reduction in temperature and an improvement in film formation rate are expected. In addition, when the to-be-processed object 100 is an electroconductive substance, high frequency electric power is employ | adopted.

  And although the bipolar pulse electric power was employ | adopted as the substrate bias electric power Eb supplied to to-be-processed object 100,100, ..., it is not restricted to this. For example, when the workpieces 100, 100,... Are conductive materials and the film to be formed is also a conductive film, DC power may be employed. Further, even if the workpieces 100, 100,... Are conductive materials, when the coating film to be formed is an insulating coating, it is appropriate that the above-described high frequency power or pulse power is employed. is there. In addition, when the to-be-processed object 100,100, ... is an insulating substance, high frequency electric power is employ | adopted. In an extreme case, the substrate bias power Eb may not be supplied.

  In addition, the filament 22 is provided to extend in the vertical direction, but is not limited thereto. For example, the filament 22 may be provided so as to extend in the horizontal direction. However, when the workpieces 100, 100,... Are elongated as described above, in order to obtain a uniform film quality distribution and film quality distribution along these extending directions. However, it is desirable that the filament 22 is provided so as to extend along the workpieces 100, 100,.

  The distance D between the filament 22 and the surface to be sputtered of the target 162 is suitably 5 mm to 50 mm as described above. For example, if the distance D is excessively small, the filament 22 and the surface to be sputtered of the target 162 may come into contact with each other, which is extremely inconvenient. In particular, when the filament 22 is thermally deformed, the fear becomes remarkable. Therefore, it is appropriate that the distance D between the filament 22 and the surface to be sputtered of the target 162 is 5 mm or more. On the other hand, if the distance D is excessively large, the magnetic field around the filament 22 becomes weak, and it is difficult to induce arc discharge. Therefore, it is appropriate that the distance D is 50 mm or less.

  Furthermore, a plurality of filaments 22 may be provided. By providing the plurality of filaments 22, the arc discharge is enhanced, that is, the plasma 300 is further densified, and the activation and ionization of the sputtered particles are promoted. In this case, it is important that the distance D between each filament 22 and the surface to be sputtered of the target 162 is 5 mm to 50 mm as described above. In addition, it is important that the distance D is uniform.

  Furthermore, the target 162 is not limited to a substantially rectangular flat plate, but may be, for example, a substantially circular plate. In an extreme case, the surface to be sputtered may be a curved surface. In any case, it is important that the filament 22 is provided between the surface to be sputtered of the target 162 and the surface to be processed of the object 100 to be formed. Then, it is desirable that the filament 22 also has an appropriate shape according to the shape of the target 16 (surface to be sputtered).

  In addition, the objects to be processed 100, 100,... Do not need to revolve and may be appropriately fixed.

  For example, JP 2006-169562 A and JP 2010-209446 A disclose a configuration in which a magnetron sputtering apparatus is combined with a plasma CVD (Chemical Vapor Deposition) apparatus. It can be applied to such a configuration.

DESCRIPTION OF SYMBOLS 10 Magnetron sputter apparatus 12 Vacuum chamber 16 Magnetron cathode 20 DC power supply device (target power supply means)
22 Filament 24 AC power supply (power supply means for thermionic emission)
26 DC power supply (discharge power supply means)
100 Workpiece 162 Target 164 Magnet unit 300 Plasma

Claims (8)

A vacuum chamber in which an object to be processed is stored;
A magnetron cathode provided in the vacuum chamber so as to have a target and a surface to be sputtered of the target is opposed to a surface to be processed of the object to be processed;
A discharge gas introduction means for introducing a discharge gas into the vacuum chamber;
Sputter power supply means for generating plasma near the surface to be sputtered by discharging the discharge gas by supplying the sputter power to both the vacuum chamber as an anode and the magnetron cathode as a cathode;
Comprising
When the ions in the plasma collide with the surface to be sputtered, the sputtered particles knocked out from the sputtered surface are attached to the surface to be processed, and a coating containing the sputtered particles as a component is formed on the surface to be processed. In the film forming apparatus by the magnetron sputtering method,
A filament that is provided between the surface to be sputtered and the surface to be processed and is heated by receiving a supply of thermoelectron emission power to emit thermoelectrons;
Discharge power supply means for accelerating the thermoelectrons by inducing the arc discharge around the filament by supplying the discharge power to both the vacuum chamber as an anode and the filament as a cathode;
The film forming apparatus further comprising: The filament is provided along the sputtered surface at a distance from the sputtered surface,
The film forming apparatus according to claim 1. The distance between the filament and the surface to be sputtered is 5 mm to 50 mm.
The film forming apparatus according to claim 2. Provided with a plurality of the filaments,
The film forming apparatus according to claim 1. Bias power supply means for supplying a bias power to both of the vacuum chamber as an anode and the workpiece as a cathode is further provided,
The film forming apparatus according to claim 1. Reactive gas introduction means for introducing a reactive gas having a property of reacting with the sputtered particles into the vacuum chamber,
The film forming apparatus according to claim 1. The sputter power is one of DC power, high frequency power, pulse power and high output high impulse power.
The film forming apparatus according to claim 1. A discharge gas for introducing a discharge gas into a vacuum chamber provided with the magnetron cathode having the target and the object to be processed so that the target surface to be processed and the surface to be processed of the object face each other Introduction process,
Sputter power supply process of generating plasma in the vicinity of the surface to be sputtered by discharging the discharge gas by supplying sputter power to the vacuum chamber as an anode and the magnetron cathode as a cathode;
Comprising
When the ions in the plasma collide with the surface to be sputtered, the sputtered particles knocked out from the sputtered surface are attached to the surface to be processed, and a coating containing the sputtered particles as a component is formed on the surface to be processed. In the film forming method by the magnetron sputtering method,
A thermoelectron emission process for emitting thermoelectrons by heating the filament by supplying thermoelectron emission power to the filament provided between the surface to be sputtered and the surface to be processed;
Arc discharge inducing process in which the thermoelectrons are accelerated by supplying electric power for discharge to both of them using the vacuum chamber as an anode and the filament as a cathode to induce arc discharge around the filament;
The film-forming method characterized by further comprising.