JP4693002B2 - Arc ion plating equipment - Google Patents

Description

  The present invention relates to an arc ion plating apparatus with improved metal ion bombardment stability.

  In recent years, for the purpose of improving the wear resistance of cutting tools and improving the sliding characteristics of sliding surfaces of machine parts, a hard film (TiN, TiAlN) by a PVD method is applied to a base material (film formation target). , CrN, etc.). An industrial technique frequently used for such hard film formation is an arc ion plating method (hereinafter referred to as “AIP method”) in which a film material is evaporated by vacuum arc discharge to form a film on the substrate surface. And an apparatus for performing such film formation is called an arc ion plating apparatus (hereinafter also referred to as “AIP apparatus”).

As shown in FIG. 10, the AIP apparatus includes a vacuum chamber 1, and a rotary table 2 having a table upper surface arranged horizontally is provided at the bottom of the vacuum chamber 1. The rotary table 2 is rotated by a rotary shaft 3 and a plurality of planetary shafts 4 protruding from the upper surface of the rotary table 2 are rotated by a planetary gear mechanism provided in the rotary table 3. A base material holder 5 for holding the base material is detachably attached to each planetary shaft 4. For this reason, each base holder 5 moves in the horizontal direction and rotates by the rotation of the rotary table 2, and the base materials such as tools and mechanical parts held by the base holder 5 revolve by the rotation of the rotary table 2. While rotating, the substrate holder 5 rotates. A negative voltage is applied to the turntable 2 by a bias power source (not shown), and this negative voltage is applied to the base material mounted thereon via the base material holder 5.
On the inner surface of the side wall of the vacuum chamber 1, a film-forming evaporation source group 7 including three evaporation sources 7 </ b> A arranged side by side at a substantially constant interval in the height direction of the vacuum chamber 1 is provided. The sources 7A are each connected to the negative electrode of the arc power supply 8, and the positive electrode is connected to the vacuum chamber 1. In FIG. 10B, 21 is an exhaust port opened on the inner surface of the vacuum chamber, 22 is a gas supply pipe for supplying a film-forming gas such as nitrogen and oxygen (not shown in FIG. 10A), Reference numeral 23 denotes an open / close door of the vacuum chamber.

A procedure for forming a functional film on the surface of the substrate using the AIP apparatus will be briefly described. First, the substrate is mounted on the substrate holder 5, this is set on the turntable 2, the inside of the vacuum chamber 1 is evacuated, and the substrate is heated by a heater (not shown) provided in the vacuum chamber 1. Metal ion bombardment (hereinafter sometimes simply referred to as “bombard”) is performed to improve the adhesion of the film to be deposited. The bombardment irradiates a substrate to which a negative voltage of several hundreds V or more (usually 600 to 1000 V) is applied with metal ions evaporated from the evaporation source 7A, and etches the surface layer of the substrate by high-energy ion irradiation. This is a step of forming a mixed layer of irradiated ions and a substrate on the surface layer.
After completion of the bombardment, a vapor of metal ions is generated from the evaporation source 7A, irradiated onto the base material, and the voltage applied to the base material is set to about 0 to −300 V to start film formation. Usually, the film formed by the AIP method is a metal such as TiN, TiCN, CrN, TiAlN, TiC, or CrON and a compound such as nitrogen, carbon, or oxygen. A film forming gas such as hydrogen is introduced alone or in combination. For example, TiN (titanium nitride) is formed by introducing nitrogen while evaporating Ti.
When the bombardment or film is formed, the base material mounted on the base material holder 5 is rotated and rotated by the rotation of the rotary table 2, so that uniform ion irradiation is performed on the entire base material.
After the film formation, the substrate is cooled, the vacuum chamber 1 is released, the film-formed base material is taken out together with the base material holder 5, and the film-formed base material is collected.

The AIP apparatus performs film formation of a bombardment and a functional film using the evaporation source group 7 for film formation. However, in Patent Document 1 (Japanese Patent Laid-Open No. Hei 4-276062), the inside of a vacuum chamber is used. Discloses an AIP apparatus provided with a deposition evaporation source and a bombardment evaporation source having the same shape as this. According to this apparatus, even when a low melting point metal (for example, TiAl alloy) is used as the evaporation material for the film formation evaporation source, a high melting point metal and a high mass metal can be used as the evaporation material for the bombardment evaporation source. Since the low melting point metal has a low ionization rate, it cannot be effectively bombarded, and the problem of droplets adhering to the substrate surface can be solved.
JP-A-4-276062

To allow stable operation of the film formation evaporation source and bombarded for evaporation source, regardless of the size of the evaporation surface, it is known that not-cry at a certain current value or more Banara. The lower limit current value depends on the target (evaporation material) provided in the evaporation source and the gas atmosphere. However, when the material such as Ti or TiAl alloy used for hard film formation is used as the evaporation material, the gas is hardly introduced. In other words, in an environment where bombardment is performed, normally, at least about 80 A is necessary, and arc discharge becomes unstable at a current value smaller than this. In the bombard process, metal ions are generated from the evaporation source in a state where a negative voltage of several hundreds V or more (usually about −600 to −1000 V) is applied to the base material. As described above, stable operation is performed. Since the arc current to the evaporation source has a lower limit, the irradiation amount of metal ions inevitably reaches a certain amount.

For this reason, there are the following problems during bombardment. When arc discharge is performed stably, the amount of energy input to the base material becomes large even with the minimum current value, and particularly in the case of a base material with a small heat capacity such as a small diameter drill, the base material temperature rapidly increases. In order to prevent such excessive temperature rise, it is necessary to set the bombardment time to a short time and repeat the bombardment while cooling, etc., so that the process control conditions must be performed in units of short time, resulting in poor controllability and consequently productivity. descend.
Usually, a plurality of evaporation sources having a relatively small evaporation surface with a diameter of about 50 to 180 mm, typically about 100 to 150 mm, are often used. When many evaporation sources are operated at the same time, a large-capacity bias power source is required and a large amount of metal ions are irradiated at once. In addition to the problem of excessive heating of the substrate, abnormal discharge occurs at the substrate. There is a problem that occurs frequently. When an abnormal discharge occurs, the bias power supply temporarily stops outputting. Therefore, if abnormal discharge occurs frequently during a short bombardment, an accurate bombard process cannot be performed.
The present invention has been made in view of such a problem, and an object of the present invention is to provide an AIP apparatus which is less likely to cause excessive temperature rise and abnormal discharge on a base material during bombardment and thus has good process controllability.

The AIP apparatus of the present invention is provided in a vacuum chamber, a vacuum chamber, a moving member that moves the substrate in a direction perpendicular to the height direction of the vacuum chamber in the vacuum chamber, and evaporated by arc discharge. A bombardment evaporation source group that cleans metal ions by colliding with the surface of the substrate; and a deposition evaporation source group that deposits metal ions evaporated by arc discharge on the surface of the substrate. The film evaporation source group is composed of a plurality of film formation evaporation sources arranged to face the base material installed on the moving member and not overlapped in the height direction of the vacuum chamber, and the bombardment evaporation source group , the opposite to the substrate, composed of a plurality of evaporation sources for bombardment fewer than the number of the height of one or the film formation evaporation source arranged without overlapping in the direction of the vacuum chamber It is one in which the vertical width of the bombardment for evaporation source in the height direction is longer than the height of the evaporation source for the deposition.
The AIP apparatus according to the present invention includes a vacuum chamber, a moving member that is provided in the vacuum chamber, moves the substrate in a direction perpendicular to the height direction of the vacuum chamber in the vacuum chamber, and arc discharge. At least one bombardment evaporation source for causing the evaporated metal ions to collide with the surface of the base material for cleaning, and a plurality of film formation evaporation sources for forming metal ions evaporated by arc discharge on the surface of the base material; Is provided. The number of bombardment evaporation sources is smaller than the number of film formation evaporation sources, and the vertical width of the evaporation chamber in the height direction of the vacuum chamber is the vertical width of the evaporation surfaces of the plurality of film formation evaporation sources. It is formed larger than the maximum vertical width. Alternatively, the bombardment evaporation source is formed such that the evaporation surface area of the bombardment evaporation source is larger than the maximum evaporation surface area among the evaporation surface areas of the plurality of film formation evaporation sources.

According to these AIP apparatuses, the number of bombardment evaporation sources is smaller than the number of film formation evaporation sources, and the vertical width of the evaporation surface or the area of the evaporation surface is smaller than that of the film formation evaporation source. Because it is formed to be large, the minimum current value required to stabilize arc discharge per unit length of the evaporation surface of the evaporation source for film formation or the evaporation surface of the evaporation source for film formation Compared with the average metal ion dose per unit area, the ion dose of the bombardment evaporation source can be reduced. For this reason, the amount of heat input to the base material can be suppressed during bombardment, and thus excessive temperature rise and abnormal discharge can be suppressed in the base material, thereby improving process controllability.

  Further, the bombardment evaporation source is preferably arranged without overlapping in the height direction of the vacuum chamber. Thereby, bombardment can be efficiently performed with respect to the base material mounted on the moving member.

  The bombardment evaporation sources may have substantially the same dimensions, and the film formation evaporation sources may have approximately the same dimensions. As a result, in each of the bombardment evaporation source and the film formation evaporation source, the evaporation sources are compatible with each other, and the types of evaporation sources to be stored as an evaporation source mounting member and spares can be reduced.

  The bombardment evaporation source preferably has a vertical width of the evaporation surface of 0.5 to 2.0 m. It has been found by the present inventors that the length of the space treated with one bombarding evaporation source is 400 mm or more, more preferably 500 mm or more, in order to prevent heating in the bombardment. When this is the vertical width of the evaporation source, it is desirable that the length be 0.5 m or more, preferably 0.6 m or more. On the other hand, if the vertical width of the evaporation surface of the evaporation source exceeds 2 m or less, it becomes difficult to manufacture the evaporation material (target). Therefore, the vertical width of the evaporation source is preferably limited to 2 m or less.

  Preferably, the bombardment evaporation source has a target formed of an evaporation material, and an electromagnetic coil formed long in the vertical width direction is attached to the back surface of the target. By providing such an electromagnetic coil, the arc spot can be scanned in a racetrack shape that is long in the vertical width direction of the evaporation surface, and metal ions are uniformly supplied from the entire surface of the evaporation surface to the substrate during bombardment. be able to. In addition, the evaporation surface of the target can be consumed uniformly, which is economical.

  The AIP apparatus further includes a plurality of deposition evaporation source groups provided with a plurality of deposition evaporation sources not overlapping each other in the height direction of the vacuum chamber, and the plurality of deposition evaporation source groups are arranged in the vacuum chamber. It can be provided in parallel in the chamber. Thus, by using the same evaporation material for the evaporation source constituting these film formation evaporation source groups, the film formation rate of the film can be increased, and the evaporation material for these evaporation sources can be made of different materials. By doing so, a different kind of film can be coated on the substrate.

  According to the AIP apparatus of the present invention, the ion irradiation amount from the bombarding evaporation source can be reduced with respect to the minimum current value required for stabilizing the arc discharge, and thus the heat input amount to the base material. Can be suppressed. For this reason, in the case of a bombardment, the excessive temperature rise and abnormal discharge of a base material can be suppressed, and process controllability improves.

Hereinafter, an embodiment of an AIP device of the present invention will be described with reference to the drawings.
FIG. 1 shows an AIP device according to the first embodiment, and the same members as those in the conventional AIP device shown in FIG.
The AIP apparatus includes a vacuum chamber 1 and a rotary table 2 (corresponding to the “moving member” of the present invention) having a table top surface disposed horizontally at the bottom of the vacuum chamber 1. The rotary table 2 is rotated by a rotary shaft 3 having a central axis disposed along the height direction of the vacuum chamber 1 (sometimes referred to as “longitudinal direction”) and provided in the rotary table 2. The planetary shaft 4 protruding from the upper surface of the rotary table 2 is rotated by the planetary gear mechanism. A base material holder 5 for holding the base material is detachably attached to each of the planetary shafts 4. Therefore, the rotation of the rotary table 2 causes the base material holders 5 to move horizontally in the circumferential direction around the rotation axis 3 in the vertical direction (also referred to as “lateral direction”) with respect to the vertical direction. . For this reason, the base material held by the base material holder 5 rotates while revolving by the rotation of the rotary table 2. A negative voltage is applied to the turntable 2 by a bias power source (not shown), and this negative voltage is applied to a substrate mounted thereon via a substrate holder 5. Further, a radiation heater (not shown) is provided on the inner side of the side wall of the vacuum chamber 1 at a portion that does not interfere with a film-forming evaporation source group 7 to be described later. The rotary table 2 does not include a planetary gear mechanism and can prevent the substrate holder from rotating.

  On the inner surface of the side wall of the vacuum chamber 1, a plurality of (three in the illustrated example) evaporation sources 7 </ b> A are arranged in the height direction of the vacuum chamber 1 at a substantially constant interval. On the other hand, one evaporation source 9A having a rectangular shape in plan view is disposed as the bombardment evaporation source group 9 on the inner wall side of the side wall opposite to the film formation evaporation source group 7. The respective evaporation sources 7 A and 9 A are connected to the negative electrodes of the arc power supplies 8 and 10, and the positive electrodes are connected to the vacuum chamber 1. A positive electrode member may be provided in the vicinity of the evaporation sources 7A and 9A, and a positive electrode of an arc power source may be connected thereto.

  The film-forming evaporation source 7A typically has a circular evaporation surface, and the diameter thereof is about φ50 to 180 mm, and generally about φ100 to 150 mm. Considering that the metal ion vapor evaporated from the evaporation source spreads slightly, the evaporation source 7A is usually arranged at an interval of about 1.5 to 2.5 times the evaporation surface diameter. The evaporation source 7A usually generates a vacuum arc discharge with an arc current of about 50A to 300A, more generally about 80A to 150A, and an arc voltage of about 15V to 40V, and a target (evaporation material) attached to the evaporation source 7A. ) Is evaporated, and the substrate is irradiated with metal ions to form a film.

  On the other hand, as shown in FIG. 6, the bombardment evaporation source 9A has a rectangular shape in plan view in which the long side is oriented in the vertical direction and the short side is arranged in the horizontal direction, and the evaporation of the target T, which is an evaporation material, is performed. The surface is also rectangular in plan view. Regarding the evaporation source and its evaporation surface including the film-forming evaporation source 7A, the length in the vertical direction is called the vertical width, and the length in the horizontal direction is called the horizontal width. Further, unless otherwise specified, the “vertical width (horizontal width) of the evaporation surface of the evaporation source” is simply referred to as “vertical width (horizontal width) of the evaporation source”. In addition, when an evaporation surface is circular, the outer diameter shall give vertical width and horizontal width.

  The bombardment evaporation source 9A has a vertical width of an irradiation region (hereinafter simply referred to as “irradiation width”) in which metal ions can be irradiated in the vertical direction by the three evaporation sources 7A of the film formation evaporation source group 7. An irradiation region having an irradiation width equivalent to the above is formed by one evaporation source. The bombarding evaporation source 9A is disposed to face the substrate in the vacuum chamber 1, and the upper end position and the lower end position of its evaporation surface are the upper end positions of the uppermost evaporation source 7A of the film forming evaporation source group 7. Are arranged so as to substantially correspond to the lower end position of the lowermost evaporation source 7A.

  The arc current region in which the bombarding evaporation source 9A is operated is in the same range as each evaporation source 7A of the film forming evaporation source group 7. For this reason, the amount of metal ions irradiated on the substrate from the evaporation surface of the bombardment evaporation source 9A can be reduced to about 1/3 per unit area, compared with the case where bombardment is performed with the film formation evaporation source 7A. The heat input per unit time / unit area to the substrate surface during bombardment can be suppressed to about 1/3.

  The arc discharge current in the bombardment is preferably set so that there is mainly one arc spot generated on the target surface for the purpose of ensuring uniformity during bombardment, and is usually 150 A or less, more preferably 120 A or less. It is good to hold. On the other hand, since it is not preferred that arc misfire occurs during bombardment due to the stability of arc discharge, the arc current is preferably 80 A or more at which arc discharge is stabilized.

  The AIP apparatus of the embodiment is used in the same manner as in the prior art except that the bombardment is performed using the bombardment evaporation source 9A. That is, the substrate holder 5 on which the substrate is mounted is set on the rotary table 2, the inside of the vacuum chamber 1 is evacuated, the substrate is heated by a heater provided in the vacuum chamber 1, and then the bombardment evaporation source 9 </ b> A is set. Then, bombarding is performed, and then a functional film is formed on the surface of the base material using the evaporation source group 7 for film formation.

  In the AIP apparatus of the above embodiment, the vertical width of the bombardment evaporation source 9A is formed larger than the vertical width of the film formation evaporation source 7A, or the evaporation surface area of the bombardment evaporation source 9A is equal to that of the film formation evaporation source 7A. Since it is formed larger than the evaporation surface area, an abrupt increase in substrate temperature during bombardment is suppressed. For this reason, problems such as overheating in a base material having a small heat capacity, which has been a conventional problem, can be solved. In addition, since the bombard process can be performed with one evaporation source 9A, the capacity of the bias power source can be reduced. Furthermore, the frequency of occurrence of abnormal discharge decreases due to a decrease in the ion density near the substrate. In addition, since the bombard time required to obtain the same bombard effect is extended several times, the condition setting time is extended, the controllability is improved, and the influence of the bias voltage cutoff period at the time of abnormal discharge is relatively Can be reduced.

As in the above-described embodiment, the irradiation region width of the metal ions processed by one bombardment evaporation source is 400 mm or more, more preferably 500 mm or more, to prevent overheating of the substrate in the bombardment. It is effective for. This is based on the empirical knowledge of the inventors, but is consistent with the following considerations. That is, the bias voltage during film formation is set to a value of up to −300 V. One of the reasons is to prevent overheating of the substrate. The arc current value during film formation with a φ100 mm evaporation source is 100 to 200 A, typically 150 A. That is, operation is performed with a bias voltage of −300 V and an arc current of 150 A, and an irradiation region with an irradiation width of 500 mm is irradiated with three evaporation sources. In the bombard process, the evaporation source is operated at an arc current of 80 to 120 A, typically 100 A in consideration of the lower limit of the arc current, and a bias voltage of −600 to −1000 V is applied to the substrate. When the maximum bias voltage (−1000 V) is applied as in the film formation, the metal bombardment is typically operated with an arc current of 100 A.
Where (arc current) x (number of evaporation sources) x (bias voltage) ÷ (irradiation width)
Is an instantaneous heat input, the bombardment irradiation width is calculated to be 370 mm so that the maximum value (150 A × 3 units × 300 V / 500 mm) at the time of film formation becomes equal at the time of bombardment. That is, if the bombardment region width is increased beyond this irradiation width, the risk of overheating is reduced, which is a rough study, but is consistent with the above empirical knowledge.

In the above case, as the bombardment evaporation source 9A, one having a vertical width of 0.5 m or more, more preferably 0.6 m or more is suitable. On the other hand, since the evaporation source needs to have a vertical width within a range in which the target can be manufactured, it is appropriate to set the maximum vertical length of the evaporation source to about 2 m or less. Note that, if the irradiation width becomes too large, the bombard processing time becomes long. Therefore, the irradiation region width of the bombardment evaporation source group is preferably about 1.2 m or less. When a longer irradiation area width is required, a plurality of bombardment evaporation sources may be arranged side by side without overlapping in the vertical direction.

Next, an AIP apparatus according to a second embodiment of the present invention will be briefly described with reference to FIG. In addition to the second embodiment, in the other embodiments described below, the same reference numerals are given to the same members as those of the AIP device of the first embodiment.
This AIP apparatus is different from the AIP apparatus according to the first embodiment in the first film-forming evaporation source group 71 including three evaporation sources 7A arranged in parallel in the vertical direction, and for the second film-forming having the same configuration. An evaporation source group 72 is provided, and these two rows of evaporation source groups 71 and 72 for film formation are provided in parallel in the circumferential direction of the vacuum chamber 1 with an interval of 90 °. In this embodiment, since the film formation is performed by the two film formation evaporation source groups 71 and 72 at the time of film formation, as long as the evaporation materials of the film formation evaporation source 7A are the same, the first implementation is performed. A film formation rate twice as high as that of the apparatus of the embodiment can be realized. However, since bombardment is performed by one rectangular evaporation source 9A as in the first embodiment, problems such as overheating in the bombard process do not occur. Further, by using different materials for the evaporation material of the evaporation source 7A of the film formation evaporation source group 71 and the evaporation material of the evaporation source 7A of the film formation evaporation source group 72, a multilayer structure film composed of two types of films is formed. A membrane can be performed.

  An AIP device according to a third embodiment of the present invention will be briefly described with reference to FIG. In the AIP apparatus according to the first embodiment, the evaporation sources 7A of the film-forming evaporation source group 7 are arranged in a line in the vertical direction, but the evaporation sources 7A are not necessarily arranged in a line. As described above, the vacuum chamber 1 may be arranged so as to be shifted stepwise in the circumferential direction of the vacuum chamber 1 so that the positions in the vertical direction do not overlap. Even with such an evaporation source group 7 for film formation, uniform coating on the substrate surface can be realized by rotating the rotary table 2 and rotating the substrate holder 5 in the vacuum chamber 1.

  An AIP device according to a fourth embodiment of the present invention will be briefly described with reference to FIG. Similar to the AIP apparatus of the second embodiment, this AIP apparatus includes a first film-forming evaporation source group 71 and a second film-forming evaporation source group 72 including three vertical evaporation sources 7A in the circumferential direction of the chamber. However, the evaporation source 7A of one evaporation source group 71 is arranged with its vertical installation position shifted from the evaporation source 7A of the other evaporation source group 72 by about 1/2 times the attachment interval of the evaporation source 7A. Yes. Thereby, a coating with higher uniformity can be formed.

  An AIP device according to a fifth embodiment of the present invention will be briefly described with reference to FIG. In this AIP apparatus, the deposition source group 7 for film formation and the evaporation source group 9 for bombardment are arranged in the circumferential direction of the vacuum chamber in the same manner as the AIP apparatus of the first embodiment, but there are six deposition source groups 7 for film formation. The evaporation source group 9 for bombarding is composed of two evaporation sources 9A. Further, the evaporation sources 7A and 9A are arranged in the longitudinal direction without overlapping at equal intervals so that the film formation evaporation source group 7 and the bombardment evaporation source group 9 each form the same irradiation width. In the fifth embodiment, a large amount of processing can be performed, and the heat load on the base material in the bombardment can be reduced to about 1/3 of the conventional case.

  Further, as shown in FIG. 5, the upper end position of the uppermost bombardment evaporation source (the upper end position of the bombardment evaporation source group) is the upper end position of the uppermost film formation evaporation source (the upper end position of the film formation evaporation source group). The lower end position of the bottom bombardment evaporation source (the lower end position of the bombardment evaporation source group) is set to the lower end position of the bottommost film formation evaporation source (the lower end position of the film formation evaporation source group). It is preferable to arrange a plurality of bombardment evaporation sources and film formation evaporation sources so as to correspond. By arranging in this way, it is possible to form a film formation region in the same part in the vertical direction with the same irradiation width formed by each of the plurality of film formation evaporation sources and the plurality of bombardment evaporation sources. it can. However, the upper end position of the bombardment evaporation source group may be set higher than the upper end position of the film formation evaporation source group, and the lower end position of the bombardment evaporation source group is set lower than the lower end position of the film formation evaporation source group. It may be set.

  In addition, as a target material of the bombardment evaporation source, metals including various alloys can be used through the first to fifth embodiments, and preferable materials include, for example, Ti and Cr. it can.

  In each of the above embodiments, each evaporation source 9A in the bombardment evaporation source group 9 uses the rectangular evaporation source (first form evaporation source) shown in FIG. 6, but the bombardment evaporation source in the present invention is the same. For example, as illustrated in FIG. 7, the outer shape of the evaporation source 9 </ b> B and the evaporation surface of the target T may have a racetrack shape in plan view. The evaporation source 9B is also installed so that its vertical width is along the vertical direction. Furthermore, as shown in FIG. 8, a bombarding evaporation source 9C having a racetrack electromagnetic coil C disposed on the back side of the target T can be used. By generating a magnetic field with the coil C, an arc spot generated on the evaporation surface can be guided in a racetrack shape on the evaporation surface of the target. Thereby, the vapor | steam irradiated to a base material from the bombardment evaporation source can be made more uniform.

  Furthermore, as an evaporation source 9D for other forms of bombardment, as shown in FIG. 9, the target T has a cylindrical shape and both ends thereof are closed by the arc confinement member 12, and as shown in FIG. The thing which has arrange | positioned the racetrack-like electromagnetic coil C inside the cylindrical target T can be used. In the evaporation source 9D, the electromagnetic coil C can generate a racetrack-shaped magnetic field, scan the arc spot in a racetrack shape, and uniformly irradiate the substrate with vapor. Further, it is preferable that the cylindrical target is rotatable in a state where the arc spot scanning track corresponding to the coil C arranged in the racetrack shape is held at a position facing the substrate. Thereby, the target can be consumed uniformly. In the case of an evaporation source using an electromagnetic coil (for example, the evaporation sources 9C and 9D), a permanent magnet that forms a magnetic field having a corresponding shape may be disposed on the target surface instead of the electromagnetic coil.

  Furthermore, a solid round bar-shaped target can be used in the vertical direction as an evaporation source for bombardment. In this case, the negative electrode of another arc power source is connected to the upper end portion or the lower end portion, and the positive electrode of each arc power source is connected to the vacuum chamber, and the arc current supplied to the evaporation source is alternately supplied from the upper end portion or the lower end portion. It is preferable to do. Since the arc spot where steam is generated on the target tends to run toward the end on the side where the arc current is supplied, the arc spot is cylindrically supplied by alternately supplying the arc current to the evaporation source from the upper end or the lower end. It becomes possible to scan more widely over the entire evaporation surface of the target, and the metal ion vapor can be uniformly supplied to the substrate.

  Here, various substrates can be used as the substrate on which the film is formed. For example, a drill can be used as a base material and can be mounted on the moving member so that the length direction thereof is the height direction of the vacuum chamber. This prevents softening of the cutting edge of the drill due to excessive temperature rise during bombardment, and the desired hard film can be formed on the cutting edge. For this reason, the drill formed into a film does not produce the cutting defect considered to be the cause of softening of a blade edge, and can obtain favorable cutting performance.

  Further, when the substrate is mounted on the turntable, the substrate holder is not necessarily used, and a film forming component such as a mold may be directly placed on the turntable. Further, a holding shaft may be provided on a rotating shaft for attaching the rotary table, and large disk parts may be held on the rotating shaft at regular intervals in the vertical direction.

  Next, although the example of the film-forming of the base material using the AIP apparatus of the said 1st Embodiment is demonstrated concretely, this invention is not limitedly interpreted by this film-forming example.

  Three deposition evaporation sources 7A having an evaporation surface with a diameter of 100 mm were arranged in the vertical direction at equal intervals. On the other hand, one bombarding evaporation source 9A having a vertical width (long side) of 600 mm and a horizontal width (short side) of 100 mm is set so that the long side is in the vertical direction so as to face the three film-forming evaporation sources 7A. Was installed on the inner surface of the side wall of the vacuum chamber 1. An irradiation region of metal ions having an irradiation width of 500 mm is formed at the same position in the vertical direction toward the substrate holder 5 by the three deposition evaporation sources 7A and one bombardment evaporation source 9A. It was done. As a base material, a high speed test piece (dimensions 12 mm × 12 mm × 5 mm) and a high speed drill 3 mm in diameter were mounted on a base material holder 5 attached to the planetary shaft 4 of the rotary table 2. A Ti target was attached to each of the evaporation sources 7A and 9A. The number of rotations of the rotary table during bombardment and film formation was 2 rpm.

First, as an example of film formation by a conventional method (conventional example), a bombard process was performed and a TiN film was formed in the following manner using only a film formation evaporation source group without using a bombardment evaporation source.
(1) The inside of the vacuum chamber was evacuated to a vacuum, and the substrate temperature was heated to 400 ° C. by a radiation heater (not shown) installed in the vacuum chamber.
(2) Each deposition evaporation source was operated at an arc current of 100 A, and a metal bombardment process was performed at a bias voltage of −1000 V for 5 minutes.
(3) After the bombarding process, each film-forming evaporation source was operated at an arc current of 150 A, and after forming a TiN film of about 3 μm while introducing a bias voltage of −50 V and nitrogen gas at a pressure of 3.9 Pa, 30 minutes The treated substrate was removed by cooling.
In the above conventional example, the required film formation time of 3 μm of TiN was 90 minutes, and the total cycle time from the start of evacuation to extraction was 3 hours and 15 minutes.

Next, as an example of film formation by a comparative method (comparative example), bombardment and film formation were performed in the following manner using only the bombardment evaporation source.
(1) Same as conventional example (1).
(2) The bombardment evaporation source was operated at an arc current of 100 A, and metal bombardment was performed at a bias voltage of −1000 for 15 minutes.
(3) After the bombardment, the bombardment evaporation source is operated at an arc current of 150 A, and a TiN film of about 3 μm is formed while introducing a bias voltage of −50 V and nitrogen gas at a pressure of 3.9 Pa, and then cooled for 30 minutes. Was taken out.
In the above comparative example, the required film formation time for 3 μm TiN was about 5 hours, and the total cycle time from the start of evacuation to removal was 7 hours.

Next, as an example of film formation (example) by the original usage of the AIP apparatus of the embodiment, bombardment processing is performed using a bombardment evaporation source in the following manner, and film formation is performed using the film formation evaporation source. Processed.
(1) Same as conventional example (1).
(2) The bombardment evaporation source was operated at an arc current of 100 A, and metal bombardment was performed at a bias voltage of −1000 V for 15 minutes.
(3) After the bombarding process, each film-forming evaporation source was operated at an arc current of 150 A, and a TiN film of about 3 μm was formed while introducing a bias voltage of −50 V and nitrogen gas at a pressure of 3.9 Pa. Cooled out for minutes and removed.
In the above example, the film formation time of 3 μm TiN was 90 minutes, and the total cycle time from the start of evacuation to removal was 3 hours 25 minutes.
Further, except for the comparative example which is clearly inferior in productivity, the film formation of the conventional example and the example was evaluated for each item in Table 1. The results are also shown in Table 1.

From Table 1, no significant difference in characteristics is observed in the film on the test piece in any film formation, but in the cutting test of a small-diameter drill, the edge of the cutting edge is partially used in the conventional example. In contrast to cutting defects that were thought to be due to softening, such problems did not occur in the examples.
In addition, the bias current naturally decreases in the embodiment, and the bombard process can be performed with a bias power source having a smaller capacity. In particular, with regard to abnormal discharge detected by the bias power source, in the conventional example, abnormal discharge occurred for 3 minutes before the bombarding process (total processing time 5 minutes), and the voltage could be applied without abnormal discharge for 2 minutes in the subsequent stage. It was only. When the bias power supply senses an abnormal discharge, the output is once cut off and reapplied after the pause, so that the normal bias voltage is not applied during the period of occurrence of the abnormal discharge. On the other hand, in the case of the embodiment, in addition to the tendency that the number of abnormal discharges is decreasing, the bombardment processing time is about three times longer, so the time during which a relatively normal voltage is applied is increased. As a result, the reproducibility of the film formation process was further improved.
Furthermore, when the film on the test piece was observed with a microscope, macro particles mixed in the film were reduced in the examples. This is thought to be because the amount of macro particles generated in the bombardment was reduced because the heat load per unit area was reduced by increasing the area of the evaporation source for bombardment.

It is a schematic diagram which shows the AIP apparatus which concerns on 1st Embodiment, (A) is the side view which carried out the longitudinal cross-section of the vacuum chamber, (B) is the top view seen from the A arrow of (A) figure. It is a schematic diagram which shows the AIP apparatus which concerns on 2nd Embodiment, (A) is the side view which carried out the longitudinal cross-section of the vacuum chamber, (B) is the top view seen from the A arrow of (A) figure. It is a schematic diagram which shows the AIP apparatus which concerns on 3rd Embodiment, (A) is the side view which carried out the longitudinal cross-section of the vacuum chamber, (B) is the top view seen from the A arrow of (A) figure. It is a schematic diagram which shows the AIP apparatus which concerns on 4th Embodiment, (A) is the side view which carried out the longitudinal cross-section of the vacuum chamber, (B) is the top view seen from the A arrow of (A) figure. It is the model which shows the AIP apparatus which concerns on 5th Embodiment, and is the side view which carried out the longitudinal cross-section of the vacuum chamber. It is a perspective view of the evaporation source for bombards having a rectangular shape in plan view. It is a perspective view of the evaporation source for bombards having a racetrack shape in plan view. The bombardment evaporation source provided with the electromagnetic coil is shown, (A) is a front view, (B) is the sectional view on the AA line of (A) figure. The bombardment evaporation source provided with the electromagnetic coil and the cylindrical target is shown, (A) is a front view, and (B) is a cross-sectional view along the line AA in FIG. It is a schematic diagram which shows the conventional AIP apparatus, (A) is the side view which longitudinally crossed the vacuum chamber, (B) is the top view seen from the A arrow of (A) figure.

Explanation of symbols

1 Vacuum chamber 2 Rotary table (moving member)
7, 71, 72 Deposition evaporation source group 7A Deposition evaporation source 9 Bombard evaporation source group 9A Bombard evaporation source T Target C Electromagnetic coil

Claims (8)

A vacuum chamber, a moving member that is provided in the vacuum chamber and moves the base material in a direction perpendicular to the height direction of the vacuum chamber in the vacuum chamber, and metal ions evaporated by arc discharge of the base material. An arc ion plating apparatus comprising: a bombardment evaporation source group for cleaning by colliding with a surface; and a film formation evaporation source group for forming a metal ion evaporated by arc discharge on the surface of the substrate;
The film-forming evaporation source group is composed of a plurality of film-forming evaporation sources arranged to face the base material installed on the moving member and not overlapped in the height direction of the vacuum chamber. The source group is composed of one or a plurality of bombardment evaporation sources smaller than the number of evaporation sources for film formation that are opposed to the base material and do not overlap in the height direction of the vacuum chamber. An arc ion plating apparatus, wherein a vertical width of the bombardment evaporation source in the vertical direction is longer than a vertical width of the film formation evaporation source. A vacuum chamber, a moving member that is provided in the vacuum chamber and moves the base material in a direction perpendicular to the height direction of the vacuum chamber in the vacuum chamber, and metal ions evaporated by arc discharge of the base material. An arc ion plating apparatus comprising: at least one bombardment evaporation source for cleaning by colliding with a surface; and a plurality of film formation evaporation sources for forming metal ions evaporated by arc discharge on the surface of the substrate. There,
The number of bombardment evaporation sources is smaller than the number of film formation evaporation sources, and the vertical width of the evaporation chamber in the height direction of the vacuum chamber is the vertical width of the evaporation surfaces of the plurality of film formation evaporation sources. Arc ion plating device formed larger than the maximum vertical width. A vacuum chamber, a moving member that is provided in the vacuum chamber and moves the base material in a direction perpendicular to the height direction of the vacuum chamber in the vacuum chamber, and metal ions evaporated by arc discharge of the base material. An arc ion plating apparatus comprising: at least one bombardment evaporation source for cleaning by colliding with a surface; and a plurality of film formation evaporation sources for forming metal ions evaporated by arc discharge on the surface of the substrate. There,
The number of bombardment evaporation sources is smaller than the number of film formation evaporation sources, and the evaporation surface area of the bombardment evaporation source is larger than the maximum evaporation surface area of the evaporation surface areas of the plurality of film formation evaporation sources. A large arc ion plating device.   The arc ion plating apparatus according to claim 2 or 3, wherein the bombardment evaporation sources are arranged without overlapping in a height direction of the vacuum chamber.   5. The arc ion plating apparatus according to claim 1, wherein each of the bombardment evaporation sources has substantially the same size, and each of the film formation evaporation sources has approximately the same size. 6.   The arc ion plating apparatus according to any one of claims 1 to 5, wherein the bombardment evaporation source has an evaporation surface having a vertical width of 0.5 to 2.0 m.   The said bombardment evaporation source has the target formed with the evaporation material, The electromagnetic coil formed long in the vertical width direction was attached to the back surface of the said target, The any one of Claim 1 to 6 Arc ion plating device.   A plurality of film-forming evaporation source groups are provided in which a plurality of film-forming evaporation sources are provided without overlapping in the height direction of the vacuum chamber, and the plurality of film-forming evaporation source groups are provided in parallel in the vacuum chamber. The arc ion plating apparatus according to any one of claims 1 to 7.

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