JP2017066188A - Semiconductor adhesive and semiconductor device - Google Patents
Semiconductor adhesive and semiconductor device Download PDFInfo
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- JP2017066188A JP2017066188A JP2015189955A JP2015189955A JP2017066188A JP 2017066188 A JP2017066188 A JP 2017066188A JP 2015189955 A JP2015189955 A JP 2015189955A JP 2015189955 A JP2015189955 A JP 2015189955A JP 2017066188 A JP2017066188 A JP 2017066188A
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Abstract
Description
本発明は、速硬化性と絶縁性に優れ、接合体の信頼性を高めることができる半導体用接着剤及び半導体装置に関する。 The present invention relates to an adhesive for semiconductor and a semiconductor device, which are excellent in rapid curing and insulating properties and can improve the reliability of a bonded body.
半導体装置の小型化及び高密度化に伴い、半導体チップを基板上に実装する方法としてフリップチップ実装が注目され急速に広まってきている。フリップチップ実装は、はんだ等からなる多数のバンプ電極を基板上に直接一括で接合するため、従来のワイヤーボンディング方式に比べ、実装面積を小さくできる、電気的特性が良好等の利点を有している。 As semiconductor devices are miniaturized and densified, flip-chip mounting is attracting attention and rapidly spreading as a method for mounting a semiconductor chip on a substrate. Flip chip mounting has many advantages such as a smaller mounting area and better electrical characteristics compared to conventional wire bonding methods, since many bump electrodes made of solder or the like are directly bonded onto the substrate. Yes.
フリップチップ実装において、半導体チップを基盤と接合する方法として、特許文献１には半導体チップの突起電極と基板の電極部とを接合した後に、半導体チップと基板との隙間に液状封止接着剤（アンダーフィル）を注入し、硬化させる方法が開示されている。
また、特許文献２には、半導体ウエハ又は半導体チップ上にフィルム状接着剤を予め供給した後、接着剤付き半導体チップを基板上に搭載する方法が開示されている。
In flip chip mounting, as a method for bonding a semiconductor chip to a substrate, Patent Document 1 discloses a method of bonding a protruding electrode of a semiconductor chip and an electrode portion of a substrate and then a liquid sealing adhesive (in a gap between the semiconductor chip and the substrate). A method of injecting and curing an underfill is disclosed.
Patent Document 2 discloses a method of mounting a semiconductor chip with an adhesive on a substrate after supplying a film adhesive on a semiconductor wafer or semiconductor chip in advance.
このような半導体用接着剤は、生産性の観点から速硬化性が、また、ショートを防止して接続信頼性を向上させるために、高い絶縁性が求められる。そのため、半導体用接着剤としては、接着性、硬化性、電気特性等の観点からエポキシ化合物を含有する硬化性の接着剤が用いられている（例えば特許文献３）。 Such an adhesive for a semiconductor is required to be fast curable from the viewpoint of productivity and to have high insulation properties in order to prevent short circuit and improve connection reliability. Therefore, as a semiconductor adhesive, a curable adhesive containing an epoxy compound is used from the viewpoint of adhesiveness, curability, electrical characteristics, and the like (for example, Patent Document 3).
半導体用接着剤は、速硬化性を向上させたり、硬化後の物性をコントロールする目的で硬化剤が配合される。硬化剤としてはアミン類やイミダゾール類、酸無水物等の化合物が目的に応じて用いられるが、硬化剤の中でも特にチオール硬化剤は速硬化性に優れていることが知られている。しかしながら、チオールを硬化剤に用いると、速硬化性には優れるものの、絶縁性が低下してしまうという問題があった。 The semiconductor adhesive is blended with a curing agent for the purpose of improving the fast curability or controlling the physical properties after curing. As the curing agent, compounds such as amines, imidazoles, and acid anhydrides are used depending on the purpose. Among the curing agents, thiol curing agents are known to be excellent in rapid curability. However, when thiol is used as a curing agent, there is a problem that although the quick curing property is excellent, the insulating property is lowered.
本発明は、速硬化性と絶縁性に優れ、接合体の信頼性を高めることができる半導体用接着剤及び半導体装置を提供することを目的とする。 An object of the present invention is to provide an adhesive for semiconductor and a semiconductor device, which are excellent in fast curability and insulation, and can improve the reliability of a joined body.
本発明は、エピスルフィド化合物と２級チオールとを含有する半導体用接着剤である。以下、本発明を詳述する。 The present invention is a semiconductor adhesive containing an episulfide compound and a secondary thiol. The present invention is described in detail below.
本発明者は絶縁性を向上させるために、チオール基のα位にある炭素原子に一つの置換基を有する、２級のチオールを硬化剤とする方法を検討した。しかしながら、２級のチオールを硬化剤に用いた場合、絶縁性は改善するものの充分ではなく、チオール基周りの立体障害が増加することによって、チオール硬化剤の利点である速硬化性が低下してしまうという問題が生じた。
これに対して、本発明者は鋭意検討した結果、エポキシ化合物に代えてエピスルフィド化合物を用い、２級チオール硬化剤を組み合わせることにより、優れた速硬化性を維持しつつも絶縁性を劇的に向上できることを見出し、本発明を完成させるに至った。
In order to improve the insulating property, the present inventor examined a method using a secondary thiol having a substituent on the carbon atom at the α-position of the thiol group as a curing agent. However, when secondary thiol is used as the curing agent, the insulation is improved, but it is not sufficient. By increasing the steric hindrance around the thiol group, the rapid curability that is an advantage of the thiol curing agent is reduced. The problem of end.
On the other hand, as a result of intensive studies, the present inventors have dramatically improved insulation while maintaining excellent rapid curability by using an episulfide compound instead of an epoxy compound and combining a secondary thiol curing agent. It has been found that it can be improved, and the present invention has been completed.
本発明の半導体用接着剤はエピスルフィド化合物を含有する。エピスルフィド化合物を含有することによって、本発明の半導体用接着剤は優れた絶縁性に加えて充分な速硬化性を発揮することができる。上記エピスルフィド化合物は特に限定されず、例えば、ビスフェノールＡ型エピスルフィド化合物（ビスフェノールＡ型エポキシ化合物のエポキシ基の酸素原子を硫黄原子に置換した化合物）、ビスフェノールＦ型エピスルフィド化合物（ビスフェノールＦ型エポキシ化合物のエポキシ基の酸素原子を硫黄原子に置換した化合物）、ビスフェノールＳ型エピスルフィド化合物（ビスフェノールＳ型エポキシ化合物のエポキシ基の酸素原子を硫黄原子に置換した化合物）、水添ビスフェノールＡ型エピスルフィド化合物、水添ビスフェノールＦ型エピスルフィド化合物、水添ビスフェノールＳ型エピスルフィド化合物、ジシクロペンタジエン型エピスルフィド化合物、ビフェニル型エピスルフィド化合物、フェノールノボラック型エピスルフィド化合物、フルオレン型エピスルフィド化合物、ポリエーテル変性エピスルフィド化合物、ブタジエン変性エピスルフィド化合物、トリアジンエピスルフィド化合物、レゾルシノール型エピスルフィド化合物、ナフタレン型エピスルフィド化合物等が挙げられる。なかでも、より高い絶縁性と速硬化性を発揮できることから、ビスフェノールＦ型エピスルフィド化合物、フルオレン型エピスルフィド化合物、レゾルシノール型エピスルフィド化合物、ナフタレン型エピスルフィド化合物が好ましい。これらのエピスルフィド化合物は単独で用いてもよく、２種類以上を併用してもよい。 The adhesive for semiconductors of the present invention contains an episulfide compound. By containing an episulfide compound, the adhesive for semiconductors of the present invention can exhibit sufficient rapid curability in addition to excellent insulating properties. The episulfide compound is not particularly limited. For example, a bisphenol A type episulfide compound (a compound in which an oxygen atom of an epoxy group of a bisphenol A type epoxy compound is substituted with a sulfur atom), a bisphenol F type episulfide compound (an epoxy of a bisphenol F type epoxy compound) Compound in which oxygen atom of group is substituted with sulfur atom), bisphenol S type episulfide compound (compound in which oxygen atom of epoxy group of bisphenol S type epoxy compound is substituted with sulfur atom), hydrogenated bisphenol A type episulfide compound, hydrogenated bisphenol F-type episulfide compound, hydrogenated bisphenol S-type episulfide compound, dicyclopentadiene-type episulfide compound, biphenyl-type episulfide compound, phenol novolac-type episulfide Compounds, fluorene type episulfide compound, polyether-modified episulfide compound, a butadiene-modified episulfide compounds, triazine polyepisulfide compounds, resorcinol-type episulfide compound, naphthalene type episulfide compounds. Of these, bisphenol F-type episulfide compounds, fluorene-type episulfide compounds, resorcinol-type episulfide compounds, and naphthalene-type episulfide compounds are preferred because they can exhibit higher insulating properties and faster curability. These episulfide compounds may be used alone or in combination of two or more.
上記エピスルフィド化合物のうち、市販品として、例えば、ＹＬ−７００７（水添ビスフェノールＡ型エピスルフィド化合物、三菱化学社製）等が挙げられる。また、上記エピスルフィド化合物は、例えば、チオシアン酸カリウム、チオ尿素等の硫化剤を使用して、エポキシ化合物から容易に合成される。 Among the above-mentioned episulfide compounds, for example, YL-7007 (hydrogenated bisphenol A type episulfide compound, manufactured by Mitsubishi Chemical Corporation) can be mentioned as a commercial product. Moreover, the said episulfide compound is easily synthesize | combined from an epoxy compound, for example using sulfurizing agents, such as potassium thiocyanate and thiourea.
本願発明の半導体用接着剤は硬化剤として２級チオールを含有する。本願発明は、エピスルフィド化合物に硬化剤として２級チオールを配合することで、速硬化性を維持しつつも優れた絶縁性能を発揮することができる。エピスルフィドと２級チオールの組み合わせが優れた絶縁性能を発揮する理由については不明であるが、エピスルフィドの開環により発生するチオエーテル部位とチオール基に対するα水素引き抜き部位が相互に絶縁性を向上させているものと考えられる。 The semiconductor adhesive of the present invention contains a secondary thiol as a curing agent. The present invention can exhibit excellent insulation performance while maintaining fast curability by blending secondary thiol as a curing agent with the episulfide compound. The reason why the combination of episulfide and secondary thiol exhibits excellent insulation performance is unclear, but the thioether moiety generated by ring opening of episulfide and the alpha hydrogen abstraction moiety for the thiol group improve the insulation properties. It is considered a thing.
上記２級チオールは特に限定されず、例えば、ペンタエリスリトールテトラキス（３−メルカプトブチレート）、トリメチロールプロパントリス（３−メルカプトブチレート）、トリメチロールエタントリス（３−メルカプトブチレート）等が挙げられる。これらは単独で用いてもよく、２種類以上を併用してもよい。 The secondary thiol is not particularly limited, and examples thereof include pentaerythritol tetrakis (3-mercaptobutyrate), trimethylolpropane tris (3-mercaptobutyrate), trimethylolethane tris (3-mercaptobutyrate), and the like. . These may be used alone or in combination of two or more.
上記２級チオールのうち、市販品として、例えば、ＰＥ−１、ＴＰＭＢ、ＴＥＭＢ（いずれも昭和電工社製）等が挙げられる。 Among the above-mentioned secondary thiols, examples of commercially available products include PE-1, TPMB, TEMB (all manufactured by Showa Denko KK) and the like.
上記エピスルフィド化合物１００重量部における上記２級チオールの含有量は特に限定されないが、好ましい下限は、５重量部、好ましい上限は、４０重量部である。上記２級チオールのより好ましい下限は７重量部、より好ましい上限は３５重量部である。 The content of the secondary thiol in 100 parts by weight of the episulfide compound is not particularly limited, but a preferred lower limit is 5 parts by weight and a preferred upper limit is 40 parts by weight. The more preferable lower limit of the secondary thiol is 7 parts by weight, and the more preferable upper limit is 35 parts by weight.
本発明の半導体用接着剤は、硬化促進剤を含有してもよい。
上記硬化促進剤は特に限定されず、例えば、イミダゾール系硬化促進剤、３級アミン系硬化促進剤等が挙げられる。これらの硬化促進剤は、単独で用いられてもよく、２種以上が併用されてもよい。
The semiconductor adhesive of the present invention may contain a curing accelerator.
The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. These hardening accelerators may be used independently and 2 or more types may be used together.
本発明の半導体用接着剤は、無機充填材を含有してもよい。無機充填材を含有することで、半導体用接着剤の硬化物の線膨張率が低下し、接合された半導体装置における応力の発生、及び、はんだ等の導通部分へのクラックの発生が良好に防止される。
上記無機充填材は特に限定されず、例えば、ヒュームドシリカ、コロイダルシリカ等のシリカ、アルミナ、窒化アルミニウム、窒化ホウ素、窒化ケイ素、ガラスパウダー、ガラスフリット等が挙げられる。
The semiconductor adhesive of the present invention may contain an inorganic filler. By containing an inorganic filler, the linear expansion coefficient of the cured product of the semiconductor adhesive is reduced, and the generation of stress in the bonded semiconductor device and the occurrence of cracks in the conductive parts such as solder are well prevented. Is done.
The inorganic filler is not particularly limited, and examples thereof include silica such as fumed silica and colloidal silica, alumina, aluminum nitride, boron nitride, silicon nitride, glass powder, and glass frit.
上記無機充填材として粒子状の無機充填材を用いる場合、平均粒子径の好ましい下限は０．０１μｍ、好ましい上限は３０μｍである。上記無機充填材の平均粒子径が０．０１μｍ未満であると、半導体用接着剤の粘度が高くなりすぎることがある。上記無機充填材の平均粒子径が３０μｍを超えると、半導体用接着剤を用いて半導体チップを加圧接合する際に、半導体チップ等の電極間で上記無機充填材を噛み込むことがある。 When a particulate inorganic filler is used as the inorganic filler, the preferable lower limit of the average particle diameter is 0.01 μm, and the preferable upper limit is 30 μm. When the average particle size of the inorganic filler is less than 0.01 μm, the viscosity of the semiconductor adhesive may be too high. When the average particle diameter of the inorganic filler exceeds 30 μm, the inorganic filler may be caught between electrodes of the semiconductor chip or the like when the semiconductor chip is pressure bonded using the semiconductor adhesive.
上記無機充填材の市販品として、例えば、ＳＥ４０５０、ＳＥ２０５０、ＳＥ２０５０−ＳＰＪ、ＳＥ２０５０−ＳＭＪ、ＳＥ２０５０−ＳＴＪ、ＳＥ１０５０−ＳＰＴ、ＳＥ１０５０−ＳＭＴ、ＳＥ１０５０−ＳＴＴ、ＹＡ０５０Ｃ−ＳＰ３（アドマテックス社製）等が挙げられる。 Examples of commercially available inorganic fillers include SE4050, SE2050, SE2050-SPJ, SE2050-SMJ, SE2050-STJ, SE1050-SPT, SE1050-SMT, SE1050-STT, YA050C-SP3 (manufactured by Admatex). Can be mentioned.
上記無機充填材の含有量は特に限定されないが、半導体用接着剤の全体重量１００重量部中、５０〜７５重量部が好ましい。
上記無機充填材の含有量が５０重量部未満であると、半導体用接着剤の硬化物の線膨張率が上昇し、接合された半導体装置における応力の発生、はんだ等の導通部分へのクラックの発生等が生じることがある。上記無機充填材の含有量が７５重量部を超えると、半導体用接着剤の粘度が高くなりすぎることがある。
Although content of the said inorganic filler is not specifically limited, 50-75 weight part is preferable in 100 weight part of whole weight of the adhesive agent for semiconductors.
When the content of the inorganic filler is less than 50 parts by weight, the coefficient of linear expansion of the cured product of the semiconductor adhesive increases, stress is generated in the bonded semiconductor device, and cracks are generated in the conductive parts such as solder. Occurrence etc. may occur. When content of the said inorganic filler exceeds 75 weight part, the viscosity of the adhesive agent for semiconductors may become high too much.
本発明の半導体用接着剤は、必要に応じて、シランカップリング剤、チタンカップリング剤、亜リン酸エステル、ホウ酸エステル、有機酸、増粘剤、消泡剤、ゴム粒子等の添加剤を含有してもよい。 The adhesive for semiconductors of the present invention includes additives such as a silane coupling agent, a titanium coupling agent, a phosphite ester, a boric acid ester, an organic acid, a thickener, an antifoaming agent, and rubber particles as necessary. It may contain.
本発明の半導体用接着剤を製造する方法は特に限定されず、例えば、上記エピスルフィド化合物、上記２級チオール及び必要に応じて他の成分を所定量配合して混合する方法等が挙げられる。上記混合する方法は特に限定されず、例えば、ホモディスパー、万能ミキサー、バンバリーミキサー、ニーダー等を用いて混合する方法等が挙げられる。 The method for producing the semiconductor adhesive of the present invention is not particularly limited, and examples thereof include a method in which the episulfide compound, the secondary thiol and, if necessary, other components are blended in a predetermined amount and mixed. The method of mixing is not particularly limited, and examples thereof include a method of mixing using a homodisper, a universal mixer, a Banbury mixer, a kneader, and the like.
本発明の半導体用接着剤の用途は特に限定されないが、電子部品用途に好適に用いられる。具体的には例えば、本発明の半導体接合用接着剤は、半導体チップと基板との接合、半導体チップと半導体チップの接合（チップオンチップ）、半導体チップとウエハとの接合（チップオンウエハ）等に好適に使用することができる。
本願発明の半導体用接着剤を用いてなる半導体装置もまた、本発明の１つである。
Although the use of the adhesive for semiconductors of this invention is not specifically limited, It uses suitably for an electronic component use. Specifically, for example, the adhesive for semiconductor bonding of the present invention can be used for bonding a semiconductor chip and a substrate, bonding a semiconductor chip and a semiconductor chip (chip-on-chip), bonding a semiconductor chip and a wafer (chip-on-wafer), and the like. Can be suitably used.
A semiconductor device using the semiconductor adhesive of the present invention is also one aspect of the present invention.
本発明によれば、速硬化性と絶縁性に優れ、接合体の信頼性を高めることができる半導体用接着剤及び半導体装置を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the adhesive agent for semiconductors and semiconductor devices which are excellent in quick-hardening property and insulation, and can improve the reliability of a joined body can be provided.
以下に実施例を掲げて本発明の態様を更に詳しく説明するが、本発明はこれら実施例のみに限定されない。 Examples of the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
（実施例１〜３、比較例１〜７）
（１）半導体用接着剤の製造
表１に記載の組成に従って、下記に示す各材料を、遊離攪拌器を用いて攪拌混合することにより半導体用接着剤を製造した。
(Examples 1-3, Comparative Examples 1-7)
(1) Manufacture of adhesive for semiconductors According to the composition described in Table 1, an adhesive for semiconductors was manufactured by stirring and mixing the materials shown below using a free stirrer.
１．主剤
（エピスルフィド化合物）
ビスフェノールＦ型エピスルフィド樹脂（ＤＩＣ社製、「ＥＸＡ−８３０ＣＲＰ」のエピスルフィド）
（エポキシ化合物）
ビスフェノールＦ型エポキシ樹脂（ＤＩＣ社製、「ＥＸＡ−８３０ＣＲＰ」）
２．硬化剤
（２級チオール）
ペンタエリスリトールテトラキス（３−メルカプトブチレート）（昭和電工社製、「ＰＥ−１」）
（１級チオール）
トリメチロールプロパントリス（３−メルカプトプロピオネート）（ＳＣ有機化学社製、「ＴＭＭＰ」）
（フェノール化合物）
ジアリールビスフェノールＡ（明和化成社製、「ＭＥＨ−８０００Ｈ」）
（アミン類）
エポキシアダクトアミン（Ｔ＆Ｋ ＴＯＫＡ社製、「ＦＸＲ−１０５０」）
（酸無水物）
トリアルキルテトラヒドロ無水フタル酸（三菱化学社製、「ＹＨ３０６」）
３．硬化促進剤
（イミダゾール類）
２，４−ジアミノー６−［２’−メチルイミダゾリル−（１’）］−エチル−ｓ−トリアジン （四国化成社製、「２ＭＺ−Ａ」）
1. Main agent (episulfide compound)
Bisphenol F type episulfide resin (DIC Corporation, "EXA-830CRP" episulfide)
(Epoxy compound)
Bisphenol F type epoxy resin (manufactured by DIC, "EXA-830CRP")
2. Curing agent (secondary thiol)
Pentaerythritol tetrakis (3-mercaptobutyrate) ("PE-1" manufactured by Showa Denko KK)
(Primary thiol)
Trimethylolpropane tris (3-mercaptopropionate) (manufactured by SC Organic Chemical Co., “TMMP”)
(Phenol compound)
Diarylbisphenol A (Maywa Kasei Co., Ltd., “MEH-8000H”)
(Amines)
Epoxy adduct amine (manufactured by T & K TOKA, “FXR-1050”)
(Acid anhydride)
Trialkyltetrahydrophthalic anhydride (Mitsubishi Chemical Corporation, “YH306”)
3. Curing accelerator (imidazoles)
2,4-Diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine (“2MZ-A” manufactured by Shikoku Chemicals)
（２）半導体装置の製造
（１）で得られた半導体用接着剤を１０ｍＬのシリンジ（岩下エンジニアリング社製）に充填し、シリンジ先端に精密ノズル（岩下エンジニアリング社製、ノズル先端径０．３ｍｍ）を取り付け、ディスペンサ装置（ＳＨＯＴ ＭＡＳＴＥＲ３００、武蔵エンジニアリング社製）を用いて塗布量が２．０ｍｇとなるように基板（ＷＡＬＴＳ−ＫＩＴ ＭＢ５０−０１０１ＪＹ、ウォルツ社製）上に塗布した。塗布した半導体用接着剤を介して、フリップチップボンダ（ＦＣ３００００Ｓ、東レエンジニアリング社製）を用いて、０．１ＭＰａの押圧下、７０℃から２８０℃まで５秒間で昇温させるにより、はんだからなる突起状電極を有する半導体チップ（ＷＡＬＴＳ−ＴＥＧ ＭＢ５０−０１０１ＪＹ、はんだの溶融温度２３５℃、ウォルツ社製）を基板上に接合した。次いで、１７０℃のオーブンで３０分間加熱し、半導体用接着剤を完全硬化させ、半導体装置を得た。
(2) Manufacturing of semiconductor device The semiconductor adhesive obtained in (1) is filled into a 10 mL syringe (manufactured by Iwashita Engineering Co., Ltd.), and a precision nozzle (manufactured by Iwashita Engineering Co., Ltd., nozzle tip diameter 0.3 mm) is used at the syringe tip. Was applied onto a substrate (WALTS-KIT MB50-0101JY, manufactured by Waltz) using a dispenser device (SHOT MASTER300, manufactured by Musashi Engineering Co., Ltd.) so that the applied amount was 2.0 mg. Using a flip chip bonder (FC30000S, manufactured by Toray Engineering Co., Ltd.) through the coated semiconductor adhesive, the temperature is raised from 70 ° C. to 280 ° C. in 5 seconds under a pressure of 0.1 MPa, thereby forming a protrusion made of solder. A semiconductor chip (WALTS-TEG MB50-0101JY, solder melting temperature of 235 ° C., manufactured by Waltz) having a cylindrical electrode was joined on the substrate. Subsequently, it heated for 30 minutes in 170 degreeC oven, the adhesive for semiconductors was fully hardened, and the semiconductor device was obtained.
＜評価＞
実施例及び比較例で得られた半導体用接着剤又は半導体装置について、以下の評価を行った。結果を表１に示した。
<Evaluation>
The following evaluation was performed about the adhesive agent for semiconductors or semiconductor device obtained by the Example and the comparative example. The results are shown in Table 1.
（速硬化性）
ＪＩＳ Ｃ２１６１Ｂに準拠して、得られた半導体用接着剤の１７０℃でのゲル化時間を求めた。ゲル化時間が１０秒未満の場合を◎、ゲル化時間が１０秒以上２０秒未満の場合を○、ゲル化時間が２０秒以上の場合を×として評価した。
(Fast curing)
Based on JIS C2161B, the gelation time at 170 ° C. of the obtained adhesive for semiconductor was determined. A case where the gelation time was less than 10 seconds was evaluated as ◎, a case where the gelation time was 10 seconds or more and less than 20 seconds was evaluated as ◯, and a case where the gelation time was 20 seconds or more was evaluated as ×.
（耐ＨＡＳＴ性（絶縁性））
得られた半導体装置をＨＡＳＴチャンバー（ｅｓｐｅｃ社製）中に温度１３０℃、湿度 ８５％（飽和）の環境下で１００時間保持した。保持後の絶縁抵抗値が初期抵抗値と比較して９０％以上の場合を◎、９０％未満６０以上の場合を○、６０％未満の場合を×として評価した。
(HAST resistance (insulation))
The obtained semiconductor device was kept in a HAST chamber (manufactured by espec) for 100 hours in an environment of a temperature of 130 ° C. and a humidity of 85% (saturated). The case where the insulation resistance value after holding was 90% or more compared to the initial resistance value was evaluated as ◎, the case where it was less than 90% and 60 or more was evaluated as ○, and the case where it was less than 60% was evaluated as ×.
表１より、エピスルフィド化合物と２級チオールを用いた実施例１〜３は、速硬化性及び絶縁性に優れていることがわかる。一方、エピスルフィド化合物とチオールの組み合わせであっても、チオールが１級である場合や、２級チオールを用いていても主剤がエポキシ化合物である場合は、速硬化性及び絶縁性が両立できていないことがわかる。 From Table 1, it can be seen that Examples 1 to 3 using an episulfide compound and a secondary thiol are excellent in fast curability and insulation. On the other hand, even if it is a combination of an episulfide compound and a thiol, if the thiol is primary, or if a secondary thiol is used and the main agent is an epoxy compound, fast curing and insulating properties are not compatible. I understand that.
本発明によれば、速硬化性と絶縁性に優れ、接合体の信頼性を高めることができる半導体用接着剤及び半導体装置を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the adhesive agent for semiconductors and semiconductor devices which are excellent in quick-hardening property and insulation, and can improve the reliability of a joined body can be provided.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010001465A (en) * | 2008-05-22 | 2010-01-07 | Sekisui Chem Co Ltd | Adhesive for bonding electronic parts |
| JP2013079316A (en) * | 2011-10-03 | 2013-05-02 | Sekisui Chem Co Ltd | Adhesive for electronic component |
| JP2014133875A (en) * | 2012-12-13 | 2014-07-24 | Three Bond Co Ltd | Curable composition |
| WO2014208656A1 (en) * | 2013-06-27 | 2014-12-31 | 三菱瓦斯化学株式会社 | Curable composition |
| JP2016127011A (en) * | 2014-12-26 | 2016-07-11 | 積水化学工業株式会社 | Conductive film, connection structure and method for producing connection structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010001465A (en) * | 2008-05-22 | 2010-01-07 | Sekisui Chem Co Ltd | Adhesive for bonding electronic parts |
| JP2013079316A (en) * | 2011-10-03 | 2013-05-02 | Sekisui Chem Co Ltd | Adhesive for electronic component |
| JP2014133875A (en) * | 2012-12-13 | 2014-07-24 | Three Bond Co Ltd | Curable composition |
| WO2014208656A1 (en) * | 2013-06-27 | 2014-12-31 | 三菱瓦斯化学株式会社 | Curable composition |
| JP2016127011A (en) * | 2014-12-26 | 2016-07-11 | 積水化学工業株式会社 | Conductive film, connection structure and method for producing connection structure |
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