JP2017045802A5 - - Google Patents

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Publication number
JP2017045802A5
JP2017045802A5 JP2015166053A JP2015166053A JP2017045802A5 JP 2017045802 A5 JP2017045802 A5 JP 2017045802A5 JP 2015166053 A JP2015166053 A JP 2015166053A JP 2015166053 A JP2015166053 A JP 2015166053A JP 2017045802 A5 JP2017045802 A5 JP 2017045802A5
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JP
Japan
Prior art keywords
semiconductor layer
photoconductive element
light
element according
photoconductive
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Pending
Application number
JP2015166053A
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English (en)
Japanese (ja)
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JP2017045802A (ja
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Priority to JP2015166053A priority Critical patent/JP2017045802A/ja
Priority claimed from JP2015166053A external-priority patent/JP2017045802A/ja
Priority to US15/228,959 priority patent/US9722126B2/en
Publication of JP2017045802A publication Critical patent/JP2017045802A/ja
Publication of JP2017045802A5 publication Critical patent/JP2017045802A5/ja
Pending legal-status Critical Current

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JP2015166053A 2015-08-25 2015-08-25 光伝導素子 Pending JP2017045802A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015166053A JP2017045802A (ja) 2015-08-25 2015-08-25 光伝導素子
US15/228,959 US9722126B2 (en) 2015-08-25 2016-08-04 Photoconductive device, measurement apparatus, and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015166053A JP2017045802A (ja) 2015-08-25 2015-08-25 光伝導素子

Publications (2)

Publication Number Publication Date
JP2017045802A JP2017045802A (ja) 2017-03-02
JP2017045802A5 true JP2017045802A5 (enExample) 2018-09-20

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Family Applications (1)

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JP2015166053A Pending JP2017045802A (ja) 2015-08-25 2015-08-25 光伝導素子

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US (1) US9722126B2 (enExample)
JP (1) JP2017045802A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017104697A1 (ja) * 2015-12-15 2017-06-22 国立大学法人東京工業大学 テラヘルツ検出センサ及びテラヘルツ画像測定装置
JP6981820B2 (ja) * 2017-09-06 2021-12-17 浜松ホトニクス株式会社 量子カスケードレーザ光源の製造方法
CN108281504B (zh) * 2018-01-08 2019-07-05 华东师范大学 一种室温高灵敏硅基光电导太赫兹检测器及其制备方法
JP7730113B2 (ja) * 2021-03-25 2025-08-27 国立大学法人徳島大学 検査装置、検査方法および食品製造方法
JP7651502B2 (ja) * 2022-03-23 2025-03-26 株式会社東芝 光スイッチ
AU2022463003A1 (en) * 2022-06-09 2024-10-17 National Tsing Hua University Ultra-wideband omnidirectional duo aloe vera cruces concentricis antenna structure
KR102711235B1 (ko) * 2022-06-24 2024-09-27 주식회사 트루픽셀 단일 광자 검출 소자, 전자 장치, 및 라이다 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4985954B2 (ja) * 2006-06-27 2012-07-25 セイコーエプソン株式会社 面発光型半導体レーザ
JP5885414B2 (ja) * 2010-08-05 2016-03-15 キヤノン株式会社 光周波数変換素子
US9804026B2 (en) 2012-01-23 2017-10-31 The Regents Of The University Of Michigan Photoconductive emitter device with plasmonic electrodes
US8785855B2 (en) * 2012-10-16 2014-07-22 Uvic Industry Partnerships Inc. Interlaced terahertz transceiver using plasmonic resonance
JP5955203B2 (ja) 2012-11-29 2016-07-20 パイオニア株式会社 光伝導基板およびこれを用いた電磁波発生検出装置
JP6332980B2 (ja) * 2013-03-08 2018-05-30 キヤノン株式会社 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置

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