JP2017036497A - Oxide sputtering target material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an oxide sputtering target material capable of suppressing generation of a crack caused by heat treatment in a bonding work process or a sputtering process of the oxide sputtering target material.SOLUTION: In an oxide sputtering target material containing a metal component having a composition containing Sn as much as 20-50 atom%, and a residue comprising Zn and inevitable impurities, and having a bending breaking strain rate at 22°C-400°C of 0.24% or higher, and having a transverse rupture strength at 200°C of 130 MPa or more, a mean value of a relative density is preferably 98.5% or more, and more preferably, its dispersion is 0.3% or less.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an oxide sputtering target material used for forming an oxide semiconductor layer of a thin film transistor for driving, for example, a large liquid crystal display or an organic EL display.

  Conventionally, in a display device such as a liquid crystal display or an organic EL display driven by a thin film transistor (hereinafter referred to as “TFT”), an amorphous silicon film or a crystalline silicon film is mainly used as a TFT channel layer. It is. With the demand for higher definition of displays, oxide semiconductors have attracted attention as materials used for TFT channel layers. For example, an oxide semiconductor film containing In (indium), Ga (gallium), Zn (zinc), and O (oxygen) disclosed in Patent Document 1 (hereinafter referred to as “IGZO thin film”). ) Has been put into practical use as having excellent TFT characteristics. In and Ga contained in the I-G-Z-O thin film are rare and expensive metals designated as rare metal stockpiling target steel types in Japan.

  Therefore, a Zn—Sn—O-based oxide semiconductor film (hereinafter referred to as “ZTO thin film”) is attracting attention as an oxide semiconductor film containing no In or Ga contained in the IGZO thin film. is there. And this ZTO thin film is formed into a film by the sputtering method using a sputtering target. In this sputtering method, ions, atoms, or clusters collide with the surface of the sputtering target, and the surface of the material is scraped (or skipped) to deposit components constituting the material on the surface of a substrate or the like. It is a method to form a film.

Here, since the ZTO thin film is a thin film containing oxygen, a so-called reactive sputtering method in which the film is formed in an atmosphere containing oxygen is used in the sputtering method. This reactive sputtering method is a method of sputtering in a mixed gas atmosphere composed of argon gas and oxygen gas. Sputtering while reacting ions, atoms or clusters with oxygen forms an oxide thin film. It is a technique to do.
And the sputtering target used for this reactive sputtering method is an oxide sputtering target material composed of a ZTO-based oxide sintered body having a component composition approximate to the component composition of the ZTO thin film, and bonded to the backing plate with a brazing material. It is used in the state that was done.
For example, in Patent Document 1, as an oxide sputtering target material made of a ZTO-based oxide sintered body, a slurry obtained by mixing zinc oxide powder and tin oxide powder with pure water, an organic binder, and a dispersant is dried and manufactured. There has been proposed a method of firing a molded body obtained by pressure molding the granulated granulated powder to obtain a sintered body.

JP 2013-36073 A

  According to the study of the present inventors, the oxide sputtering target material made of the ZTO-based oxide sintered body manufactured by the method disclosed in Patent Document 1 described above is cracked at the time of bonding to the backing plate, or at the time of sputtering. It was confirmed that cracking might occur.

  An object of the present invention is to provide an oxide sputtering target material that solves the above-described problems and is less likely to crack during bonding to a backing plate or sputtering.

  As a result of examining the above-mentioned problems, the present inventor has found that cracks occurring in the oxide sputtering target are caused by heat treatment in the manufacturing process or use process, and bending fracture at a specific temperature of the oxide sputtering target. The present inventors have found that the problem can be solved by setting the strain rate and / or the bending strength to a predetermined value or more.

  That is, the present invention has a composition in which the metal component contains 20 to 50 atomic% of Sn, the balance is made of Zn and inevitable impurities, and the bending fracture strain at 22 ° C. to 400 ° C. is 0.24% or more. It is an oxide sputtering target material.

The oxide sputtering target material of the present invention preferably has a bending fracture strain rate of 200% or more at 0.25%.
Moreover, the oxide sputtering target material of the present invention has a composition in which the metal component contains 20 to 50 atomic% of Sn, the balance is made of Zn and inevitable impurities, and the bending strength at 200 ° C. is 130 MPa or more. is there.
The oxide sputtering target material of the present invention preferably has a bending strength at 300 ° C. of 130 MPa or more.

The oxide sputtering target material of the present invention preferably contains 0.005 to 4,000 atomic percent in total of at least one of Al, Si, Ga, Mo, and W with respect to the entire metal component.
The oxide sputtering target material of the present invention preferably has an average relative density of 98.5% or more. The variation in relative density [(maximum value−minimum value) / average value] × 100 (%) is more preferably 0.3% or less.

  The oxide sputtering target material of the present invention can suppress cracking even in a state where it is subjected to a high-temperature load during bonding to the backing plate or during sputtering. Thus, the present invention is a useful technique for forming a TFT channel layer in a manufacturing process of a large liquid crystal display or an organic EL display.

The relationship figure of the bending fracture | rupture distortion rate in each temperature of this invention example 1 and a thermal expansion coefficient. The relationship figure of the bending fracture | rupture distortion rate in each temperature of this invention example 2 and a thermal expansion coefficient. The relationship figure of the bending fracture | rupture distortion factor in each temperature of a comparative example, and a thermal expansion coefficient. The figure which shows the relationship between the temperature of an oxide sputtering target material, and bending strength. The figure which shows the measurement site | part of the density of an oxide sputtering target material. The relationship figure of the bending fracture | rupture distortion rate in each temperature of the example 3 of this invention, and a thermal expansion coefficient. The relationship figure of the bending fracture strain rate in each temperature of the example 4 of this invention, and a thermal expansion coefficient. The relationship figure of the bending fracture | rupture distortion factor in each temperature of this invention example 5 and a thermal expansion coefficient. The figure which shows the relationship between the temperature of an oxide sputtering target material, and bending strength.

The oxide sputtering target material of the present invention has a bending fracture strain rate of 0.24% or more at 22 ° C to 400 ° C. As described above, the oxide sputtering target material is usually used in a state where it is bonded to the backing plate with a brazing material. Here, in the bonding step, the heated oxide sputtering target material and the backing plate are bonded via the molten In. At this time, the oxide sputtering target material, the backing plate, and In are each heated to a temperature of 22 ° C to 400 ° C. For this reason, an oxide sputtering target material receives a high temperature load.
On the other hand, in the formation of the ZTO thin film by the sputtering method, the oxide sputtering target material is subjected to a high temperature load of 200 ° C. or higher even during sputtering due to high power input or long-time sputtering.

The oxide sputtering target material of the present invention has a bending fracture strain rate of 22 to 400 ° C. of 0.24% or more. Thereby, the oxide sputtering target material of this invention can suppress generation | occurrence | production of the crack by the high temperature load like the time of bonding to the backing plate mentioned above, or sputtering. In addition, in the sputtering method, depending on the film formation conditions, the input power may increase at a high temperature, so that the bending fracture strain at 200 ° C. is more preferably 0.25% or more.
Here, the bending fracture strain rate in the present invention is a bending strain rate when a material defined in JIS K7171 breaks. This bending fracture strain rate can be calculated by performing a three-point bending test on a test piece taken from the oxide sputtering target material, measuring the amount of deflection until the test piece breaks, and substituting it into the equation (1). Here, ε _fB is the bending fracture strain rate, s _B is the deflection amount until fracture, h is the thickness of the test piece, and L is the distance between the fulcrums. For example, when measuring in an environment of 200 ° C., measurement is performed in a state where a thermostat is attached to the tester and the test piece is heated and held at 200 ° C.

In the oxide sputtering target material of the present invention, the bending fracture strain ratio ε _fB at 22 ° C. to 400 ° C. is defined by the temperature applied to the oxide sputtering target material during bonding to the backing plate or during sputtering. This is because is in the range of 22 ° C to 400 ° C. And the thermal expansion coefficient in 22 to 400 degreeC of the oxide sputtering target material of this invention at this time can be made into the range of 0.00 to 0.30% on the basis of 22 degreeC.

The oxide sputtering target material of the present invention can suppress the occurrence of cracking due to a high temperature load such as bonding to the backing plate or sputtering described above by setting the bending strength at 200 ° C. to 130 MPa or more. it can. Moreover, since the sputtering method may be a higher temperature depending on the film forming conditions, the bending strength at 300 ° C. is more preferably 130 MPa or more.
The bending strength according to the present invention means that a load is gradually applied at a moving speed of 0.5 mm / min in a state where a test piece is placed on two supports installed at intervals of 20 mm and a pusher is applied to the center. In addition, the load when it breaks is measured.

The oxide sputtering target material of the present invention is composed of Zn, Sn, and O (oxygen), and specifically contains 20 to 50 atomic% of Sn with respect to the entire metal component, with the balance being Zn and inevitable. It is an oxide sintered body made of impurities. In the present invention, by a Zn 50 atomic% or more, and suppress the SnO ₂ is excessive, to improve the sinterability, it is possible to improve the density of the oxide sputtering target material.
In the present invention, by setting Sn to 20 atomic% or more, vacancies generated by evaporation of ZnO having a high vapor pressure can be suppressed, and the density of the oxide sputtering target material can be improved. On the other hand, Sn to be to 50 atomic% or less, and suppress the SnO ₂ is excessive, to improve the sinterability, it is possible to improve the density of the oxide sputtering target material. Sn is atomic%, preferably 20 ≦ Sn ≦ 40, and more preferably 25 ≦ Sn ≦ 35.
Further, by setting Zn to 80 atomic% or less, vacancies generated by evaporation of ZnO having a high vapor pressure can be suppressed, and the density of the oxide sputtering target material can be improved. Zn is atomic%, preferably 50 ≦ Zn ≦ 80, and more preferably 65 ≦ Zn ≦ 75.

The oxide sputtering target material of the present invention preferably contains 0.005 to 4,000 atomic percent in total of at least one of Al, Si, Ga, Mo, and W with respect to the entire metal component. At this time, in the oxide sputtering target material of the present invention, a part of Zn and / or Sn which are metal components is one or more of Al, Si, Ga, Mo and W in a total of 0.005 to 4. Substitution in the range of 000 atomic%.
Among these elements, Al, Ga, Mo, and W are useful elements for controlling carrier mobility and preventing photodegradation. Si is an element useful for improving sinterability.

The oxide sputtering target material of the present invention preferably has an average relative density of 98.5% or more. Thereby, generation | occurrence | production of a nodule can also be suppressed in addition to being able to improve the film quality of the ZTO thin film formed by suppressing generation | occurrence | production of the abnormal discharge at the time of sputtering, and obtaining the stable discharge.
Moreover, as for the oxide sputtering target material of this invention, it is more preferable that the variation [(maximum value−minimum value) / average value] × 100 (%) of the relative density is 0.3% or less. Thereby, generation | occurrence | production of the crack at the time of machining of an oxide sputtering target material and a chip | tip can be suppressed.

The relative density of the oxide sputtering target material in the present invention refers to a value obtained by dividing the bulk density of the oxide sputtering target material measured by the Archimedes method by its theoretical density in percentage. Here, the theoretical density uses a value obtained as a weighted average calculated by a mass ratio obtained from a composition ratio.
For example, in the case of a disk-shaped oxide sputtering target material as shown in FIG. 5, the measurement position corresponds to a portion i to a portion iv corresponding to the outer peripheral portion of the oxide sputtering target material and a central portion. There are a total of 5 sites v. Further, in the case of a rectangular oxide sputtering target material such as a rectangle, there are a total of five sites including four portions corresponding to corner portions of the oxide sputtering target material and portions corresponding to the central portion. In the present invention, an average value of these five relative density values is employed.

Below, an example of the manufacturing method of the oxide sputtering target material of this invention is demonstrated.
The oxide sputtering target material of the present invention is, for example, a mixture of ZnO powder and SnO ₂ powder with pure water and a dispersing agent to form a slurry, and after drying this slurry, a granulated powder is produced. Is calcined to prepare a calcined powder. And after carrying out wet crushing of this calcined powder, a molded object is produced by casting and it can obtain by baking at normal pressure through degreasing.
The calcining temperature of the granulated powder for producing the calcined powder is preferably set to 1000 to 1200 ° C. By setting the calcining temperature to 1000 ° C. or higher, the reaction between the ZnO powder and the SnO ₂ powder can sufficiently proceed. On the other hand, by setting the calcining temperature to 1200 ° C. or lower, it is possible to maintain an appropriate powder particle size, and thus a dense oxide sputtering target material can be obtained.

  The firing temperature at normal pressure is preferably set to 1300 to 1500 ° C. By setting the firing temperature to 1300 ° C. or higher, sintering is promoted and a dense oxide sputtering target material can be obtained. Thereby, even if the oxide sputtering target material of this invention is a state which receives a high load, it can suppress a crack. On the other hand, by setting the firing temperature to 1500 ° C. or lower, the ZnO powder can be prevented from evaporating, and a dense oxide sputtering target material can be obtained.

  When the maximum temperature holding time during firing is 10 hours or more, densification by firing proceeds, but when it exceeds 50 hours, the evaporation of ZnO increases and the density decreases. For this reason, in order to obtain the oxide sputtering target material of this invention, it is preferable to make holding time into 10 to 50 hours.

Below, another example of the manufacturing method of the oxide sputtering target material of this invention is demonstrated.
The oxide sputtering target material of the present invention is prepared, for example, by mixing ZnO powder and SnO ₂ powder with pure water and a dispersant to form a slurry, drying the slurry, and then crushing, granulating, and degreasing. It can also be obtained by pressure sintering the granulated powder. As a means for pressure sintering, methods such as hot pressing, discharge plasma sintering, hot isostatic pressing can be applied. Among these, hot pressing and spark plasma sintering are preferable because the residual stress of the sintered body can be reduced and cracking of the oxide sputtering target material can be prevented.

The sintering temperature for pressure sintering is preferably set to 900 to 1100 ° C. By setting the sintering temperature to 900 ° C. or higher, sintering can be promoted, and a dense oxide sputtering target material having a high bending fracture strain rate can be obtained. On the other hand, by setting the sintering temperature to 1100 ° C. or lower, in addition to suppressing evaporation of the ZnO powder, it is possible to suppress a reduction reaction in which the SnO ₂ powder reacts with the pressure sintering member.
The pressure for pressure sintering is preferably set to 20 to 40 MPa. When the applied pressure is 20 MPa or more, densification is possible and an oxide sputtering target material having a high bending fracture strain rate can be obtained. On the other hand, by setting the applied pressure to 40 MPa or less, it is possible to suppress the cracking of the pressure sintering member and the cracking of the resulting oxide sputtering target material.
The sintering time for pressure sintering is preferably set to 3 to 15 hours. By setting the sintering time to 3 hours or more, the sintering can be sufficiently advanced, and a dense oxide sputtering target material having a high bending fracture strain rate can be obtained. On the other hand, a decrease in production efficiency can be suppressed by setting the sintering time to 15 hours or less.

First, ZnO powder having an average particle size (D50 of cumulative particle size distribution) of 0.70 μm and an average particle size (cumulative particle size distribution) such that Sn is 30 atomic% and Zn is 70 atomic% with respect to the entire metal component. D50) of 1.85 μm SnO ₂ powder is weighed, put into a stirring vessel containing a predetermined amount of pure water and a dispersing agent, mixed to make a slurry, dried this slurry, and then crushed Granulation and degreasing were carried out to obtain a granulated powder having an average particle size (D50 of cumulative particle size distribution) of 45 μm.
Next, the granulated powder obtained above is filled in a carbon pressure vessel, placed inside the furnace body of a discharge plasma sintering apparatus, and pressure sintered at 950 ° C., 40 MPa for 12 hours. Carried out. After pressure sintering, it was taken out from the carbon pressure vessel to obtain a sintered body.
The obtained sintered body was subjected to plate thickness processing by surface grinding using a diamond grindstone, and then using a water jet cutting machine, an oxide sputtering target serving as Example 1 of the present invention having a thickness of 10 mm and an outer diameter of 100 mm A material was prepared.

Moreover, the granulated powder obtained above was filled in a carbon pressure vessel, installed inside the furnace body of a hot press apparatus, and pressure sintered at 1050 ° C., 40 MPa for 4 hours. .
The obtained sintered body was subjected to plate thickness processing by surface grinding using a diamond grindstone, and then an oxide sputtering target serving as Example 2 of the present invention having a thickness of 10 mm and an outer diameter of 100 mm using a water jet cutting machine. A material was prepared.

As a comparative example, an oxide sputtering target material was manufactured as follows. First, ZnO powder having an average particle size (D50 of cumulative particle size distribution) of 0.70 μm and an average particle size (cumulative particle size distribution) such that Sn is 30 atomic% and Zn is 70 atomic% with respect to the entire metal component. 30% by weight of SnO ₂ powder having a D50) of 1.85 μm was weighed and put into a stirring vessel containing a predetermined amount of pure water and a dispersant to form a slurry, and this slurry was dried. Thereafter, pulverization, granulation, and degreasing were performed to obtain a granulated powder having an average particle size (D50 of cumulative particle size distribution) of 45 μm. This granulated powder was wet pulverized, and the resulting slurry was cast to form a molded body.
Next, the obtained molded body was fired at 1550 ° C. under normal pressure for 4 hours to obtain a fired body.
The obtained fired body was subjected to plate thickness processing by surface grinding using a diamond grindstone, and then an oxide sputtering target material serving as a comparative example having a thickness of 10 mm and an outer diameter of 100 mm was produced using a water jet cutting machine. did.

A bending test piece of 3 mm × 4 mm × 40 mm was cut out from each sintered body and fired body obtained above, and the bending fracture strain rate was measured by the measurement method described above. Further, from each of the sintered bodies and the fired bodies obtained above, a 3 mm × 4 mm × 40 mm bending strength test piece was cut out and the bending strength was measured. At this time, a test piece was placed on two supports installed at intervals of 20 mm, and a load was gradually applied at a moving speed of 0.5 mm / min in a state in which a pusher was applied to the center portion, and statically fractured. When the load was measured.
The results are shown in Tables 1 and 2 and FIGS. From the results of Table 1, FIG. 1 and FIG. 2, it was confirmed that the oxide sputtering target material of the present invention had a bending fracture strain rate of 0.24% or more at 22 ° C. to 400 ° C. Moreover, from the results of Table 2 and FIG. 4, it was confirmed that the oxide sputtering target material of the present invention had a bending strength of 130 MPa or more at any temperature of 22 ° C., 100 ° C., 200 ° C., and 300 ° C.
Also, no significant reduction in bending fracture strain rate was observed at 22 ° C. to 400 ° C. reached during bonding to the backing plate or sputtering. In addition, the bending strength was not greatly reduced even at a temperature of 200 to 300 ° C. reached during bonding to the backing plate or sputtering.

Next, a sputtering test was performed using the oxide sputtering target material of the present invention example. Sputtering was performed under the conditions of an Ar pressure of 0.5 Pa and a DC power of 300 W for an integrated time of 4 hours. In addition, this time, in order to evaluate the sputtering target itself, the sputtering test was performed in an Ar atmosphere instead of reactive sputtering.
When the oxide sputtering target material after use was visually confirmed, no cracks were confirmed.
On the other hand, the oxide sputtering target material of the comparative example had a bending fracture strain of less than 0.24% at all temperatures of 22 ° C., 100 ° C., 200 ° C., 300 ° C., and 400 ° C. The oxide sputtering target material of the comparative example had a bending strength of less than 130 MPa at all temperatures of 22 ° C., 100 ° C., 200 ° C., and 300 ° C.
Next, when sputtering was performed using the oxide sputtering target material of the comparative example, it was confirmed that four cracks were generated in a radial pattern from the approximate center of the surface of the oxide sputtering target material.

  In addition, each of the sintered bodies and the fired bodies obtained above are analyzed samples each having a size of 10 mm × 20 mm × 20 mm from a portion 5 mm away from the edge of four locations corresponding to the corners and a portion corresponding to the center portion. The true density of each part was measured, and the relative density and its variation [(maximum value−minimum value) / average value] × 100 (%) were calculated by the method described above. The results are shown in Tables 3 and 4.

  From the results of Table 3 and Table 4, when the oxide sputtering target material of the present invention was subjected to density measurement at five locations of the site i to the site iv corresponding to the outer peripheral portion and the site v corresponding to the central portion, It was confirmed that the relative density was 98.5% or more in any part, and the variation [(maximum value−minimum value) / average value] × 100 (%) of the relative density was 0.3% or less. .

  On the other hand, the oxide sputtering target material of the comparative example was subjected to density measurement at five locations, ie, a site i to site iv corresponding to the outer peripheral portion and a site v corresponding to the central portion. It was less than 5%. The relative density variation [(maximum value−minimum value) / average value] × 100 (%) was 0.7% at the maximum, which was larger than the variation of the oxide sputtering target material of the present invention.

First, ZnO powder having an average particle size (D50 of cumulative particle size distribution) of 0.70 μm and an average particle size (cumulative particle size distribution) such that Sn is 30 atomic% and Zn is 70 atomic% with respect to the entire metal component. SnO ₂ powder having a D50 of 1.85 μm was weighed, put into a stirring vessel containing a predetermined amount of pure water and a dispersant, and mixed to obtain a slurry. The slurry was dried and granulated and then calcined at 1090 ° C. to obtain a calcined powder. In this calcined powder, the average particle size (D50 of cumulative particle size distribution) was adjusted so that Zn was 69.928 atomic%, Sn was 29.940 atomic%, and Al was 0.132 atomic% with respect to the entire metal component. ) Was mixed with AZO (zinc aluminum oxide) powder having a particle size of 54.03 μm, and the particle size was adjusted by wet crushing so that the average particle size (D50 of cumulative particle size distribution) was 1 μm.
After the above-mentioned wet crushing, three molded bodies having a long side: 830 mm × short side: 250 mm × thickness: 16 mm were obtained by casting.
Next, each of the obtained molded bodies was fired at 1400 ° C. for 17 hours, 20 hours, or 34 hours in a non-reducing atmosphere to obtain a fired body. Then, this fired body was machined to obtain an oxide sputtering target material which is Invention Example 3 to Invention Example 5 having a long side: 750 mm × short side: 220 mm × thickness: 14 mm.

A bending test piece of 3 mm × 4 mm × 40 mm was cut out from each fired body obtained above, and the bending fracture strain rate was measured by the measurement method described above. Moreover, the bending strength test piece of 3 mm x 4 mm x 40 mm was cut out from each sintered body obtained above, and the bending strength was measured. At this time, a test piece was placed on two supports installed at intervals of 20 mm, and a load was gradually applied at a moving speed of 0.5 mm / min in a state in which a pusher was applied to the center portion, and statically fractured. When the load was measured.
The results are shown in Tables 5 and 6 and FIGS. From the results of Table 5 and FIGS. 6 to 8, it was confirmed that the oxide sputtering target material of the present invention had a bending fracture strain rate of 0.24% or more at 22 ° C. to 400 ° C. Moreover, from the results of Table 6 and FIG. 9, it was confirmed that the oxide sputtering target material of the present invention had a bending strength of 130 MPa or more at any temperature of 200 ° C. and 300 ° C.
Also, no significant reduction in bending fracture strain rate was observed at 22 ° C. to 400 ° C. reached during bonding to the backing plate or sputtering. In addition, the bending strength was not greatly reduced even at a temperature of 200 to 300 ° C. reached during bonding to the backing plate or sputtering.
Next, a sputtering test was performed using the oxide sputtering target material of the present invention example. Sputtering was performed under the conditions of an Ar pressure of 0.5 Pa and a DC power of 300 W for an integrated time of 4 hours. In addition, this time, in order to evaluate the sputtering target itself, the sputtering test was performed in an Ar atmosphere instead of reactive sputtering.
When the oxide sputtering target material after use was visually confirmed, no cracks were confirmed.

  In addition, an analysis sample of 10 mm × 20 mm × 20 mm was cut out from each of the four parts corresponding to the corners of each fired body obtained above and a part 5 mm away from the edge and the part corresponding to the central part, The relative density and its variation [(maximum value−minimum value) / average value] × 100 (%) were calculated by the method described above. The results are shown in Table 7 and Table 8.

  From the results of Table 7 and Table 8, when the oxide sputtering target material of the present invention was subjected to density measurement at five locations of the site i to site iv corresponding to the outer peripheral portion and the site v corresponding to the central portion, In any part, it was confirmed that the relative density was 98.5% or more, and the variation [(maximum value−minimum value) / average value] × 100 (%) of the relative density was 0.1% or less. .

Claims (7)

  The metal component contains 20 to 50 atomic% of Sn, the balance is composed of Zn and inevitable impurities, and the bending fracture strain at 22 ° C. to 400 ° C. is 0.24% or more. Oxide sputtering target material.   The oxide sputtering target material according to claim 1, wherein a bending fracture strain at 200 ° C. is 0.25% or more.   An oxide sputtering target material characterized in that the metal component contains 20 to 50 atomic% of Sn, the balance is composed of Zn and inevitable impurities, and the bending strength at 200 ° C. is 130 MPa or more.   4. The oxide sputtering target material according to claim 3, wherein the bending strength at 300 ° C. is 130 MPa or more.   The total metal component contains at least one of Al, Si, Ga, Mo and W in a total amount of 0.005 to 4.000 atomic%. The oxide sputtering target material described in 1.   The average value of relative density is 98.5% or more, The oxide sputtering target material in any one of Claim 1 thru | or 5 characterized by the above-mentioned. The oxide sputtering target material according to claim 6, wherein the variation [(maximum value−minimum value) / average value] × 100 (%) of the relative density is 0.3% or less.

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