JP2017028247A5 - - Google Patents

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Publication number
JP2017028247A5
JP2017028247A5 JP2016081747A JP2016081747A JP2017028247A5 JP 2017028247 A5 JP2017028247 A5 JP 2017028247A5 JP 2016081747 A JP2016081747 A JP 2016081747A JP 2016081747 A JP2016081747 A JP 2016081747A JP 2017028247 A5 JP2017028247 A5 JP 2017028247A5
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JP
Japan
Prior art keywords
silicon
graphite
intermediate layer
oxygen
conjugates
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JP2016081747A
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English (en)
Japanese (ja)
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JP6590322B2 (ja
JP2017028247A (ja
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Publication of JP2017028247A5 publication Critical patent/JP2017028247A5/ja
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JP2016081747A 2015-07-16 2016-04-15 グラファイトとシリコンとの結合体及びその製造方法 Active JP6590322B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015141731 2015-07-16
JP2015141731 2015-07-16

Publications (3)

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JP2017028247A JP2017028247A (ja) 2017-02-02
JP2017028247A5 true JP2017028247A5 (https=) 2019-01-24
JP6590322B2 JP6590322B2 (ja) 2019-10-16

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ID=57775434

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JP2016081747A Active JP6590322B2 (ja) 2015-07-16 2016-04-15 グラファイトとシリコンとの結合体及びその製造方法

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US (1) US10357942B2 (https=)
JP (1) JP6590322B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200338860A1 (en) * 2018-06-21 2020-10-29 Jinan Jingzheng Electronics Co., Ltd. Composite monocrystalline film
JP7199743B2 (ja) 2018-12-28 2023-01-06 国立研究開発法人産業技術総合研究所 グラファイト薄膜/シリコン基板積層体、及びその製造方法、高排熱型電子デバイス用基板
JPWO2023243225A1 (https=) * 2022-06-14 2023-12-21

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505212B1 (https=) 1966-04-09 1975-03-01
JPS586712B2 (ja) 1976-07-01 1983-02-05 財団法人特殊無機材料研究所 耐熱性高強度接合体の製造方法
JPS6311509A (ja) * 1986-07-03 1988-01-19 Hitachi Chem Co Ltd 黒鉛モノクロメ−タ−の製造法
JP4182323B2 (ja) 2002-02-27 2008-11-19 ソニー株式会社 複合基板、基板製造方法
JP5138244B2 (ja) * 2007-03-20 2013-02-06 日本電信電話株式会社 電子デバイス用基板の製造方法
JP2008294110A (ja) 2007-05-23 2008-12-04 Nippon Telegr & Teleph Corp <Ntt> 電子デバイス用基板およびその製造方法
JP5091920B2 (ja) * 2009-06-23 2012-12-05 株式会社沖データ 半導体ウエハの製造方法
US8822306B2 (en) * 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

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