JP2016529702A5 - - Google Patents
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- JP2016529702A5 JP2016529702A5 JP2016527009A JP2016527009A JP2016529702A5 JP 2016529702 A5 JP2016529702 A5 JP 2016529702A5 JP 2016527009 A JP2016527009 A JP 2016527009A JP 2016527009 A JP2016527009 A JP 2016527009A JP 2016529702 A5 JP2016529702 A5 JP 2016529702A5
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- tiers
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- 3dic
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Claims (20)
計算、デジタル処理、アナログ処理、無線周波数(RF)信号処理、アナログ/混合信号処理、電力管理、センサー、電源、バッテリー、メモリ、デジタル論理、低漏れ、低雑音/高利得、クロック、組合せ論理、および順序論理からなるグループから選択された複数の機能要素と、
前記複数のティアの間に分散された前記複数の機能要素と、
前記複数のティアを電気的に結合する複数のモノリシックティア間ビア(MIV)と、
自己充足型システムオンチップ(SOC)を与える前記複数の機能要素と
を備える、モノリシック3次元(3D)集積回路(IC)(3DIC)システム。 Multiple tiers placed one above the other,
Calculation, digital processing, analog processing, radio frequency (RF) signal processing, analog / mixed signal processing, power management, sensors, power supply, battery, memory, digital logic, low leakage, low noise / high gain, clock, combinational logic, And a plurality of functional elements selected from the group consisting of sequential logic,
The plurality of functional elements distributed among the plurality of tiers;
A plurality of inter-monolithic vias (MIVs) that electrically couple the plurality of tiers;
Self give satisfaction systems-on-chip (SOC) and a plurality of functional elements, monolithic three dimensional (3D) integrated circuit (IC) (3DIC) system.
計算、デジタル処理、アナログ処理、無線周波数(RF)信号処理、アナログ/混合信号処理、電力管理、センサー、電源、バッテリー、メモリ、デジタル論理、低漏れ、低雑音/高利得、クロック、組合せ論理、および順序論理からなるグループから選択された複数の機能を与えるための手段と、
前記複数のティア間に分散された前記複数の機能を与えるための前記手段と、
前記複数のティアを電気的に相互結合するための手段と、
自己充足型システムオンチップ(SOC)を与える前記複数の機能を与えるための前記手段と
を備える、モノリシック3次元(3D)集積回路(IC)(3DIC)システム。 Multiple tiers placed one above the other,
Calculation, digital processing, analog processing, radio frequency (RF) signal processing, analog / mixed signal processing, power management, sensors, power supply, battery, memory, digital logic, low leakage, low noise / high gain, clock, combinational logic, And means for providing a plurality of functions selected from the group consisting of sequential logic;
Said means for providing said plurality of functions distributed among said plurality of tiers;
Means for electrically interconnecting the plurality of tiers;
Self give satisfaction systems-on-chip (SOC) and a said means for providing said plurality of functional, monolithic three dimensional (3D) integrated circuit (IC) (3DIC) system.
前記3DIC内の複数のティアを与えることと、
前記複数のティアにわたる複数の機能要素を与えることと、
モノリシックティア間ビア(MIV)を使用して前記複数のティアを相互結合することと、
前記3DICを用いた自己充足型システムオンチップ(SOC)を与えることと
を備える方法。 A method of implementing a three-dimensional (3D) integrated circuit (IC) (3DIC) system comprising:
Providing multiple tiers within the 3DIC;
Providing a plurality of functional elements across the plurality of tiers;
Interconnecting the plurality of tiers using a monolithic inter-tier via (MIV);
How and a giving self sufficiency systems-on-chip (SOC) using the 3DIC.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361846648P | 2013-07-16 | 2013-07-16 | |
US61/846,648 | 2013-07-16 | ||
US14/013,399 | 2013-08-29 | ||
US14/013,399 US9418985B2 (en) | 2013-07-16 | 2013-08-29 | Complete system-on-chip (SOC) using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) technology |
PCT/US2014/046503 WO2015009614A1 (en) | 2013-07-16 | 2014-07-14 | Complete system-on-chip (soc) using monolithic three dimensional (3d) integrated circuit (ic) (3dic) technology |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016529702A JP2016529702A (en) | 2016-09-23 |
JP2016529702A5 true JP2016529702A5 (en) | 2016-11-17 |
Family
ID=52343114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016527009A Pending JP2016529702A (en) | 2013-07-16 | 2014-07-14 | Complete system-on-chip (SOC) using monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) technology |
Country Status (9)
Country | Link |
---|---|
US (2) | US9418985B2 (en) |
EP (1) | EP3022766A1 (en) |
JP (1) | JP2016529702A (en) |
KR (1) | KR101832330B1 (en) |
CN (1) | CN105378918B (en) |
BR (1) | BR112016000868B1 (en) |
CA (1) | CA2917586C (en) |
TW (1) | TWI618222B (en) |
WO (1) | WO2015009614A1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9418985B2 (en) | 2013-07-16 | 2016-08-16 | Qualcomm Incorporated | Complete system-on-chip (SOC) using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) technology |
ES2798115T3 (en) * | 2014-06-20 | 2020-12-09 | Nagravision Sa | Physical interface module |
US9256246B1 (en) * | 2015-01-29 | 2016-02-09 | Qualcomm Incorporated | Clock skew compensation with adaptive body biasing in three-dimensional (3D) integrated circuits (ICs) (3DICs) |
US9628077B2 (en) | 2015-03-04 | 2017-04-18 | Qualcomm Incorporated | Dual power swing pipeline design with separation of combinational and sequential logics |
CN105391823B (en) * | 2015-11-25 | 2019-02-12 | 上海新储集成电路有限公司 | A method of reducing mobile device size and power consumption |
CN105742277B (en) * | 2016-04-13 | 2018-06-22 | 中国航天科技集团公司第九研究院第七七一研究所 | A kind of large-volume stereo integrates SRAM memory three-dimensional extended method |
US9523760B1 (en) * | 2016-04-15 | 2016-12-20 | Cognitive Systems Corp. | Detecting motion based on repeated wireless transmissions |
US9754923B1 (en) | 2016-05-09 | 2017-09-05 | Qualcomm Incorporated | Power gate placement techniques in three-dimensional (3D) integrated circuits (ICs) (3DICs) |
US9929149B2 (en) | 2016-06-21 | 2018-03-27 | Arm Limited | Using inter-tier vias in integrated circuits |
US9871020B1 (en) * | 2016-07-14 | 2018-01-16 | Globalfoundries Inc. | Through silicon via sharing in a 3D integrated circuit |
US10678985B2 (en) * | 2016-08-31 | 2020-06-09 | Arm Limited | Method for generating three-dimensional integrated circuit design |
US9712168B1 (en) * | 2016-09-14 | 2017-07-18 | Qualcomm Incorporated | Process variation power control in three-dimensional (3D) integrated circuits (ICs) (3DICs) |
US10176147B2 (en) | 2017-03-07 | 2019-01-08 | Qualcomm Incorporated | Multi-processor core three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods |
US10719100B2 (en) | 2017-11-21 | 2020-07-21 | Western Digital Technologies, Inc. | System and method for time stamp synchronization |
US10727965B2 (en) * | 2017-11-21 | 2020-07-28 | Western Digital Technologies, Inc. | System and method for time stamp synchronization |
CN110069795A (en) * | 2018-01-23 | 2019-07-30 | 长芯半导体有限公司 | Fast custom chip method |
GB2586050B (en) * | 2019-07-31 | 2021-11-10 | Murata Manufacturing Co | Power supply output device |
GB2586049B (en) * | 2019-07-31 | 2022-03-09 | Murata Manufacturing Co | Power supply output device |
US11270917B2 (en) * | 2020-06-01 | 2022-03-08 | Alibaba Group Holding Limited | Scalable and flexible architectures for integrated circuit (IC) design and fabrication |
CN112769402B (en) * | 2020-12-21 | 2024-05-17 | 中国航天科工集团八五一一研究所 | X/Ku wave band broadband variable frequency assembly based on TSV technology |
EP4024222A1 (en) | 2021-01-04 | 2022-07-06 | Imec VZW | An integrated circuit with 3d partitioning |
KR102443742B1 (en) * | 2021-02-08 | 2022-09-15 | 고려대학교 산학협력단 | A monolithic 3D based scratchpad memory |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131474A (en) * | 1984-11-30 | 1986-06-19 | Agency Of Ind Science & Technol | Laminated semiconductor device |
US6046078A (en) * | 1997-04-28 | 2000-04-04 | Megamos Corp. | Semiconductor device fabrication with reduced masking steps |
US20030015768A1 (en) | 2001-07-23 | 2003-01-23 | Motorola, Inc. | Structure and method for microelectromechanical system (MEMS) devices integrated with other semiconductor structures |
WO2003030252A2 (en) | 2001-09-28 | 2003-04-10 | Hrl Laboratories, Llc | Process for producing interconnects |
US7126214B2 (en) | 2001-12-05 | 2006-10-24 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
JP2004165269A (en) * | 2002-11-11 | 2004-06-10 | Canon Inc | Laminated semiconductor device |
KR100569590B1 (en) | 2003-12-30 | 2006-04-10 | 매그나칩 반도체 유한회사 | Radio frequency semiconductor device and method of manufacturing the same |
DE102006030267B4 (en) * | 2006-06-30 | 2009-04-16 | Advanced Micro Devices, Inc., Sunnyvale | Nano embossing technique with increased flexibility in terms of adjustment and shaping of structural elements |
US8136071B2 (en) | 2007-09-12 | 2012-03-13 | Neal Solomon | Three dimensional integrated circuits and methods of fabrication |
US7692448B2 (en) | 2007-09-12 | 2010-04-06 | Neal Solomon | Reprogrammable three dimensional field programmable gate arrays |
ATE512114T1 (en) * | 2008-09-03 | 2011-06-15 | St Microelectronics Tours Sas | THREE-DIMENSIONAL STRUCTURE WITH VERY HIGH DENSITY |
US8115511B2 (en) * | 2009-04-14 | 2012-02-14 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US7986042B2 (en) * | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US20110199116A1 (en) | 2010-02-16 | 2011-08-18 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
KR20120027339A (en) * | 2009-05-14 | 2012-03-21 | 에스알아이 인터내셔널 | Low cost high efficiency transparent organic electrodes for organic optoelectronic devices |
TWI501380B (en) * | 2010-01-29 | 2015-09-21 | Nat Chip Implementation Ct Nat Applied Res Lab | Three-dimensional soc structure stacking by multiple chip modules |
US8450779B2 (en) | 2010-03-08 | 2013-05-28 | International Business Machines Corporation | Graphene based three-dimensional integrated circuit device |
JP2012019018A (en) * | 2010-07-07 | 2012-01-26 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
CN102024782B (en) * | 2010-10-12 | 2012-07-25 | 北京大学 | Three-dimensional vertical interconnecting structure and manufacturing method thereof |
EP2469597A3 (en) | 2010-12-23 | 2016-06-29 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Multi-level integrated circuit, device and method for modeling multi-level integrated circuits |
TWI496271B (en) * | 2010-12-30 | 2015-08-11 | Ind Tech Res Inst | Wafer level molding structure and manufacturing method thereof |
DE102011004581A1 (en) * | 2011-02-23 | 2012-08-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | A technique for reducing plasma-induced etch damage during the fabrication of vias in inter-layer dielectrics by modified RF power ramp-up |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
JP6019599B2 (en) * | 2011-03-31 | 2016-11-02 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
WO2013052679A1 (en) | 2011-10-04 | 2013-04-11 | Qualcomm Incorporated | Monolithic 3-d integration using graphene |
US9496255B2 (en) * | 2011-11-16 | 2016-11-15 | Qualcomm Incorporated | Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same |
JP5981711B2 (en) * | 2011-12-16 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP2013215917A (en) | 2012-04-05 | 2013-10-24 | Seiko Epson Corp | Printing apparatus and printing method |
CN103545275B (en) * | 2012-07-12 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole encapsulating structure and formation method |
US8889491B2 (en) * | 2013-01-28 | 2014-11-18 | International Business Machines Corporation | Method of forming electronic fuse line with modified cap |
US9171608B2 (en) * | 2013-03-15 | 2015-10-27 | Qualcomm Incorporated | Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods |
KR20140113024A (en) * | 2013-03-15 | 2014-09-24 | 에스케이하이닉스 주식회사 | Resistance variable Memory Device And Method of Driving The Same |
US9418985B2 (en) | 2013-07-16 | 2016-08-16 | Qualcomm Incorporated | Complete system-on-chip (SOC) using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) technology |
US9070711B2 (en) * | 2013-08-02 | 2015-06-30 | Globalfoundries Inc. | Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices |
-
2013
- 2013-08-29 US US14/013,399 patent/US9418985B2/en not_active Expired - Fee Related
-
2014
- 2014-06-30 TW TW103122569A patent/TWI618222B/en not_active IP Right Cessation
- 2014-07-14 KR KR1020167003723A patent/KR101832330B1/en active IP Right Grant
- 2014-07-14 JP JP2016527009A patent/JP2016529702A/en active Pending
- 2014-07-14 BR BR112016000868-5A patent/BR112016000868B1/en active IP Right Grant
- 2014-07-14 WO PCT/US2014/046503 patent/WO2015009614A1/en active Application Filing
- 2014-07-14 CN CN201480039458.6A patent/CN105378918B/en active Active
- 2014-07-14 EP EP14747230.2A patent/EP3022766A1/en not_active Ceased
- 2014-07-14 CA CA2917586A patent/CA2917586C/en active Active
-
2016
- 2016-08-09 US US15/231,836 patent/US9583473B2/en active Active
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