JP2016212009A5 - - Google Patents
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- Publication number
- JP2016212009A5 JP2016212009A5 JP2015097366A JP2015097366A JP2016212009A5 JP 2016212009 A5 JP2016212009 A5 JP 2016212009A5 JP 2015097366 A JP2015097366 A JP 2015097366A JP 2015097366 A JP2015097366 A JP 2015097366A JP 2016212009 A5 JP2016212009 A5 JP 2016212009A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- silicon nitride
- component
- transmittance
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
また、シリコン窒化膜は一般的に光が深部まで到達しやすい物質として知られている。言い換えると、シリコン窒化膜の透過率は、シリコンの透過率より高い。しかし、図８に示す富士電機、成田、小山、市川らの報告（富士時報、Ｖol.78 No.4 2005 プラズマCVD窒化膜の組成制御技術）によれば、シリコン窒化膜中の窒素濃度（膜中窒素量Ｎ／（Ｓｉ＋Ｎ））を３０％以上に制御することでシリコン窒化膜の屈折率を大きくできる。屈折率を大きくすることで、次のＳ３の工程の検査において、シリコン窒化膜表面でのレーザー光の反射成分（散乱成分）が増え、直進する成分（透過成分）を減少させることができる。これにより、シリコン窒化膜中のパーティクルに達するレーザー光の照射エネルギーを十分に小さくし、パーティクルを焼失することなく計測が可能であると推測できる。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015097366A JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015097366A JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016212009A JP2016212009A (ja) | 2016-12-15 |
| JP2016212009A5 true JP2016212009A5 (ja) | 2017-06-29 |
| JP6414801B2 JP6414801B2 (ja) | 2018-10-31 |
Family
ID=57551613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015097366A Active JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6414801B2 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11442024B2 (en) | 2017-09-11 | 2022-09-13 | Hitachi High-Technologies Corporation | Defect classification device, inspection device, and inspection system |
| CN108010863B (zh) * | 2017-12-07 | 2021-10-01 | 武汉新芯集成电路制造有限公司 | 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆 |
| KR102060084B1 (ko) * | 2018-01-22 | 2019-12-30 | 에스케이실트론 주식회사 | 웨이퍼의 결함 측정 방법 |
| CN109059812B (zh) * | 2018-09-11 | 2020-11-24 | 太原理工大学 | 一种精确测量曲面上多层微纳米薄膜厚度的方法 |
| JP7103211B2 (ja) | 2018-12-27 | 2022-07-20 | 株式会社Sumco | 半導体ウェーハの評価方法および製造方法ならびに半導体ウェーハの製造工程管理方法 |
| CN116130377B (zh) * | 2023-04-17 | 2023-09-29 | 西安奕斯伟材料科技股份有限公司 | 外延晶圆的缺陷检测方法、装置、系统及其制造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473203A (en) * | 1987-09-14 | 1989-03-17 | Oki Electric Ind Co Ltd | Inspection of surface foreign matter |
| JPH06252230A (ja) * | 1993-02-24 | 1994-09-09 | Hitachi Ltd | 欠陥検査方法および装置 |
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2015
- 2015-05-12 JP JP2015097366A patent/JP6414801B2/ja active Active
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