JP2016191140A - Raw material gas supply apparatus, and filming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a raw material gas supplying apparatus capable of supplying a material gas continuously to the consumption zone side even at the time of exchanging a raw material gas to the consumption zone side of the raw material gas, and a filming apparatus.SOLUTION: In a raw material gas supply apparatus 12 for sublimating a solid material to feed a raw material gas through a raw material gas common passage 42 to a consumption zone, a first raw material gas supply part 5 is connected to the raw material gas common passage 42, and includes first carrier gas introduction passages 711A and 711B, and first removable material containers 51A and 51B accommodating said solid material. A second material gas supply part 6 is connected to the material gas common passage 42, and is equipped with second carrier gas introduction passages 811A and 811B, and second removable raw material containers 61A and 61B accommodating a solid material. Moreover, a common heating part 9A heats the material gas common passage 42, and first and second heating parts 9B and 9C performs the heating for sublimating the solid materials in the first and second material gas supply parts 5 and 6.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a technique for supplying a raw material obtained by sublimating a solid raw material to a consumption area together with a carrier gas.

As one of methods for forming a film on a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”), a CVD (Chemical Vapor Deposition) method and an ALD (Atomic Layer Deposition) method are known. These processes are performed by supplying a raw material gas into a processing container in which a vacuum atmosphere is formed and a wafer is stored.
When supplying a raw material gas using a sublimable solid raw material, for example, the raw material stored in the raw material container is heated and sublimated, while the raw material is transported by the carrier gas introduced into the raw material container. Thus, the raw material gas (mixed gas of the raw material and the carrier gas) is supplied to the processing container.

  At this time, when the raw material in the raw material container is consumed and the remaining amount of the raw material decreases, the raw material container is replaced. However, when there is only one source container connected to the processing container, the source container cannot be replaced unless the operation of the film forming apparatus provided with the processing container is stopped. Considering the preparation for stopping the film forming apparatus, the work for replacing the raw material container, the subsequent airtight check and the preparation for restarting the film forming apparatus, it takes several hours to replace the raw material container once. There is a case.

  For example, when the frequency of replacing the material container is once a year or once every several months, even if several hours of work time is required, the influence of the material container replacement operation on the operation of the film forming apparatus is small. . However, in a film forming apparatus that consumes a large amount of raw material, the replacement operation becomes a major factor that reduces the operation of the film forming apparatus as the frequency of replacing the raw material container increases.

Here, in Patent Documents 1 to 3, a plurality of raw material containers (raw material containers A and B) for supplying raw materials to a processing container (reaction chamber 2, film forming chamber 16, and growth furnace 11) in which film formation is performed. , Column 1, bubblers 20a, 20b, 15) connected in parallel, the number of raw material containers connected to the processing vessel (Patent Document 1), the flow rate of the fluid transporting the raw material (Patent Document 2), and temperature control (Patent) A technique for adjusting the supply amount of the raw material by performing the literature 3) is described.
However, none of these Patent Documents 1 to 3 disclose a technique that allows wafer processing to be continued on the processing container side when the material container is replaced.

JP 2008-218760 A: Claims 1 and 3, paragraph 0025, FIGS. JP 2009-94276 A: claims 1, 3, 4, paragraphs 0018, 0024, FIGS. Japanese Patent Application Laid-Open No. 63-107111: Claim 1, page 3, upper left column, line 6 to lower left column, line 8, FIG.

  The present invention has been made in view of such circumstances, and the purpose thereof is a raw material gas supply device capable of continuously supplying a raw material gas to the consumption region side of the raw material gas even when the raw material container is replaced, And providing a film forming apparatus.

The raw material supply apparatus of the present invention is a raw material gas supply apparatus that supplies a raw material obtained by sublimating a solid raw material in a raw material container to a consumption area together with a carrier gas.
A raw material gas common flow path for sending out a carrier gas containing a sublimated raw material to the consumption area,
A first raw material gas passage whose downstream side is connected to the raw material gas common passage, a first carrier gas introduction passage through which the carrier gas is introduced, and the first separation valve; A first source gas supply comprising: a first source container containing the solid source provided detachably with respect to the upstream side of the source gas channel and the downstream side of the first carrier gas introduction channel And
A second raw material gas passage whose downstream side is connected to the raw material gas common passage, a second carrier gas introduction passage through which the carrier gas is introduced, and a second carrier gas through the second isolation valve; A second source gas supply comprising a second source container containing the solid source provided detachably with respect to the upstream side of the source gas channel and the downstream side of the second carrier gas introduction channel And
A common heating section for heating the source gas common flow path;
The first source gas supply unit and the second source gas supply unit are each provided with a first heating unit and a second heating unit for sublimating the solid source. .

The raw material supply apparatus described above may have the following features.
(A) A control signal for switching the first heating unit and the second heating unit independently of each other between a heating state for sublimating the solid raw material and a stopped state in which the heating is stopped. A control unit for output was provided.
(B) A gas-tightness check gas is introduced into the first gas-feeding check gas introduction path for introducing gas-tightness-checking gas into the first material gas supply unit, and a gas-tightness check gas is introduced into the second material gas supply unit. And a second gas-tightness check gas introduction passage for the purpose. At this time, in the first raw material gas flow path between the first separation valve and the first raw material container, heating by the first heating unit is stopped, and the airtightness using the gas for airtightness check is used. When performing the check, a first inflow prevention valve for preventing the gas heated by the common heating unit from flowing into the region where the airtightness check is performed is provided,
In the second source gas flow path between the second isolation valve and the second source container, heating by the second heating unit is stopped and an airtight check using an airtightness check gas is performed. In this case, a second inflow prevention valve is provided for preventing the gas heated by the common heating unit from flowing into the region where the airtightness check is performed.
(C) each including a first shelf and a second shelf for accommodating the first raw material container and the second raw material container, and the first shelf and the second shelf are mutually connected. Provide a common insulated cabinet.

  According to another aspect of the present invention, there is provided a film forming apparatus for performing a film forming process by supplying a source gas to a substrate, the source gas supply apparatus according to any one of the above, and the source gas common channel. And a processing container in which a mounting portion for mounting the substrate is disposed, and an exhaust mechanism for evacuating the processing container.

  The present invention provides first and second heating units for sublimating the solid source for the first and second source gas supply units having detachable first and second source containers. An independent common heating unit is provided in the source gas common flow path to which the source gas is supplied from the first and second source gas supply units. For this reason, even during the period in which the raw material containers of the first and second raw material gas supply units on one side are replaced, the second and first raw material gas supply units on the other side are used to share the raw material gas. The supply of the source gas from the flow path can be continued.

It is a whole lineblock diagram showing the outline of the film deposition system provided with the source gas supply device of the present invention. It is a detailed block diagram of the said source gas supply apparatus. It is an external view of the cabinet which accommodates the raw material container provided in the said raw material gas supply apparatus. It is a vertical side view of the said cabinet and a raw material container. It is a 1st explanatory view showing an operation of the source gas supply device. It is the 2nd explanatory view showing an operation of the above-mentioned source gas supply device. It is a 3rd explanatory view showing an operation of the source gas supply device. It is a whole block diagram of the film-forming apparatus provided with the source gas supply apparatus which concerns on the other example of embodiment of this invention. It is a block diagram which shows the outline | summary of the film-forming apparatus provided with the source gas supply apparatus which concerns on the other example of embodiment of this invention.

  Hereinafter, an outline of a film forming apparatus provided with the source gas supply apparatus of the present invention will be described with reference to FIG. The film forming apparatus 1 is provided for performing a film forming process by, for example, the ALD method on the wafer 100 which is a substrate, and the film forming process unit 11 corresponding to the source gas consumption area and the film forming process unit 11 And a raw material gas supply device 12 for supplying the raw material gas.

  In the film forming processing unit 11, for example, a processing unit 21 that is a vacuum container, and the wafer 100 is horizontally held and a mounting unit 22 including a heater (not shown), a source gas, and the like are introduced into the processing container 21. And a gas inlet 23. The inside of the processing vessel 21 is composed of a vacuum pump or the like, and is evacuated by a vacuum evacuation unit 24 that constitutes an evacuation mechanism. The film formation is advanced.

  A gas supply path 25 is connected to the gas introduction unit 23, and the gas supply path 25 constitutes a part of the source gas supply device 12, and a source gas common channel 42 that supplies the source gas toward the processing vessel 21. Are connected via a valve V1. Further, a reaction gas channel 27 for supplying a reaction gas that reacts with the source gas and a replacement gas channel 28 for supplying a replacement gas are joined to the gas supply channel 25 via valves V27 and V28, respectively. Yes.

For example, when a tungsten (W) film is formed on the wafer 100, WCl ₆ that is solid at room temperature is used as a raw material, and hydrogen (H) is used as a reactive gas (reducing gas) that reacts with the raw material. ₂ ) Gas is used. The upstream side of the reaction gas channel 27 is connected to a reaction gas supply source 271 and supplies an inert gas such as nitrogen (N ₂ ) gas via a gas channel 272 branched from the reaction gas channel 27. Connected to source 273. The other end side of the replacement gas channel 28 is connected to a supply source 281 of a replacement gas, for example, N ₂ gas.
Further, a branch passage 43 provided with a valve V43 branches from the aforementioned raw material gas common passage 42, and the downstream end of the branch passage 43 is connected to the vacuum exhaust part 24.

  A mass flow meter 341 for measuring the flow rate of the source gas supplied to the film forming unit 11 side is provided on the upstream side of the source gas common channel 42. Further, on the upstream side of the mass flow meter 341, two source gas supply units (first source gas supply unit 5 and second source gas supply unit 6) are connected in parallel to the source gas common flow path 42. ing.

Each of the source gas supply units 5 and 6 has a source gas channel (on the downstream side of which is connected to the source gas common channel 42 via a valve V423 (first isolation valve) and V424 (second isolation valve)). A first source gas channel 421, a second source gas channel 422), and a carrier gas introduction channel (first carrier) into which an inert gas, eg, nitrogen (N ₂ ) gas, serving as a source carrier gas is introduced. A gas introduction path 711, a second carrier gas introduction path 811), a position upstream of the source gas flow paths 421, 422, and a position downstream of the carrier gas introduction paths 711, 811. And a raw material container (first raw material container 51, second raw material container 61) containing WCl ₆ which is a solid raw material.

Here, as shown in FIG. 2, in the source gas supply device 12 of this example, each source gas supply unit 5, 6 includes two source containers 51A, 51B, 61A, 61B. In FIG. 1, in order to show a schematic configuration of the entire film forming apparatus 1, the source gas containers 51 and 61 in the source gas supply units 5 and 6, and the carrier gas introduction path 711 connected to the source containers 51 and 61. , 811 etc. are displayed together in one set.
Hereinafter, the detailed configuration of the source gas supply device 12 will be described with reference to FIG.

In the raw material gas supply device 12, the first raw material gas supply unit 5 and the second raw material gas supply unit 6 have substantially the same configuration, so the description will be made with a focus on the first raw material gas supply unit 5. Do.
In the first source gas channel 421 described above for supplying source gas to the source gas common channel 42, source gas extraction channels 721A and 721B are provided via a valve V421 provided further upstream of the valve V423. Connected in parallel. These source gas extraction paths 721A and 721B are inserted into the gas phase portions in the first source containers 51A and 51B via valves V724A and V724B and valves V723A and V723B. The upstream ends of the source gas extraction paths 721A and 721B serve as extraction nozzles for extracting the source gas from the first source containers 51A and 51B.
In the present embodiment, the source gas extraction paths 721A and 721B constitute a part of the “first source gas channel” together with the first source gas channel 421 described above.

  The first raw material containers 51A and 51B are configured as cylindrical containers containing, for example, 5 to 60 kg of solid raw materials, and the outer wall surfaces thereof are, for example, jacket-shaped external heating units 52A and 52B provided with resistance heating elements. Covered by. The external heating units 52A and 52B are connected to a power supply unit (not shown), and preset the first raw material containers 51A and 51B in order to sublimate the solid raw material based on a control signal from the control unit 200 described later. It is possible to switch between a heating state in which the heating is performed and a stopped state in which the heating is stopped.

  Further, first carrier gas introduction paths 711A and 711B for introducing a carrier gas into the first raw material containers 51A and 51B are connected to the first raw material containers 51A and 51B. The first carrier gas introduction passages 711A and 711B have downstream end portions inserted into the gas phase portions of the first raw material containers 51A and 51B, and carrier gas is introduced into the first raw material containers 51A and 51B. It is an introduction nozzle to introduce. On the upstream side of the introduction nozzle, valves V722A and V722B, valves V721A and V721B, and valves V711A and V711B are sequentially provided in the first carrier gas introduction paths 711A and 711B, and the upstream end portion is a carrier. The gas introduction paths 41A and 41B are connected.

Mass flow controllers (MFCs) 331 and 332 for adjusting the flow rate of the carrier gas supplied to the first raw material containers 51A and 51B are interposed in the carrier gas introduction paths 41A and 41B, and the upstream end portions thereof are Are connected to a common carrier gas supply source 31.
In this example, the case where the inert gas N ₂ gas is used as the carrier gas supplied from the carrier gas supply source 31 is shown, but the film forming process is affected without reacting with the raw material. If there is no gas, a gas other than N ₂ gas (eg, argon gas) may be employed as the “inert gas”.

Further, a bypass for bypassing the first raw material containers 51A and 51B between the raw material gas extraction paths 721A and 721B in the vicinity of the first raw material containers 51A and 51B and the first carrier gas introduction paths 711A and 711B. Channels 722A and 722B are provided. These bypass passages 722A and 722B are provided between the source gas extraction passages 721A and 721B side valves V724A and V724B and the valves V723A and V723B, and the first carrier gas introduction passages 711A and 711B side valves V721A and V721B. And a pipe between the valves V722A and V722B.
Furthermore, the first raw material containers 51A and 51B are configured to be detachable from the raw material gas extraction passages 721A and 721B and the first carrier gas introduction passages 711A and 711B, so that the first raw material remaining amount is reduced. The raw material containers 51A and 51B can be replaced with new first raw material containers 51A and 51B.

In addition to the above-described configuration, the carrier gas supply source 31 described above has the dilution gas flow path 26 for supplying the dilution gas mixed with the source gas extracted from the first source containers 51A and 51B. The carrier gas introduction paths 41A and 41B are connected in parallel. The dilution gas flow path 26 is provided with a mass flow controller 36 for adjusting the flow rate of the dilution gas, and the downstream ends thereof are the first source gas supply unit 5 side and the second source gas supply unit, respectively. Branching into a first dilution gas introduction path 261 and a second dilution gas introduction path 262 for supplying dilution gas to the 6th side.
A valve V261 is interposed in the first dilution gas introduction path 261, and the downstream end of the first dilution gas introduction path 261 has a first source gas at a position between the junction of the source gas extraction paths 721A and 721B and the valve V421. It merges with the flow path 421.

  The detailed configuration on the first source gas supply unit 5 side has been described above, but the second source gas supply unit 6 has the same configuration. That is, (1) The second source gas channel 422 is provided with a source gas extraction path 821A for extracting source gas from the second source containers 61A and 61B via the valve V422 provided further upstream of the valve V424. 821B are connected in parallel. (2) For example, the second raw material containers 61A and 61B can store 5 to 60 kg of solid raw material, and the raw material gas extraction passages 821A and 821B and the second carrier gas introduction passage 811A and 811B are configured to be detachable, and their outer wall surfaces are covered with jacket-like external heating units 62A and 62B having resistance heating elements, and can be switched between a heating state and a stopped state. It has become. Further, (3) the second carrier gas introduction path 811A, 811B for introducing the carrier gas into the second raw material containers 61A, 61B is a common carrier gas supply via the carrier gas introduction paths 41A, 41B described above. Connected to the source 31. The carrier gas supply source 31 that supplies the carrier gas to the second source gas supply unit 6 may be provided independently of the carrier gas supply source 31 on the first source gas supply unit 5 side.

  Furthermore, (4) bypass flow paths 822A and 822B for bypassing the second raw material containers 61A and 61B are provided as raw material gas extraction paths 821A and 821B and second carriers in the vicinity of the second raw material containers 61A and 61B. (5) The second dilution gas introduction path 262 branched from the dilution gas path 26 is connected to the confluence portion of the source gas extraction paths 821A and 821B, and the valve V422 is connected to the gas introduction paths 811A and 811B. Are joined to the second source gas flow path 422 at a position therebetween.

Here, in FIGS. 1, 2, and 5 to 7, the flow path and the valve on the first raw material gas supply unit 5 side are marked with “700 series” while the second raw material gas supply unit 6 side The flow path and the valve are labeled with “800 series”, and the flow path and the valve having the same last two digits have a common function. Further, the configuration of the raw material container on the first raw material gas supply unit 5 side is given a reference numeral “50 series”, while the constituent component of the raw material container on the second raw material gas supply unit 6 side is “60 series”. Those having the same reference numerals and having the same number in the last digit are common components.
Furthermore, in FIG. 2, 5-7, each component which attached | subjected the identification code | symbol of "A, B" to the end of the code | symbol is described collectively in FIG.

  For the raw material gas supply apparatus 12 described above, after the first raw material containers 51A and 51B (second raw material containers 61A and 61B) are exchanged, the first raw material containers 51A and 51B and the raw material Connection portions of gas extraction paths 721A and 721B, first carrier gas introduction paths 711A and 711B (second raw material containers 61A and 61B, raw material gas extraction paths 821A and 821B, second carrier gas introduction paths 811A and 811B) It is possible to supply gas for airtightness check.

The airtight check gas supply source 32 can supply, for example, N ₂ gas having a preset pressure as a gas for airtight check. The airtight check the gas supply passage 44 connected to the hermetically check gas supply source 32, the first material container 51A of the first source gas supply portion 5, and supplies a N ₂ gas for airtight checked 51B first The gas introduction passages 731A and 731B for airtightness check and the second gas introduction passages 831A and 831B for airtightness feeding to the second raw material containers 61A and 61B on the second raw material gas supply unit 6 side are branched. doing. Valves V731A, V731B, V831A, and V831B are interposed in the first gas-introducing gas introduction paths 731A, 731B, 831A, and 831B, respectively.

The downstream end of the first gas-tightness check gas introduction path 731A joins the pipe between the valve V711A and the valve V721A of the first carrier gas introduction path 711A on the first raw material container 51A side. The downstream end of the second gas-tightness check gas introduction path 831A is joined to a pipe between the valve V811A and the valve V821A of the second carrier gas introduction path 811A on the second raw material container 61A side.
Similarly, the downstream end of the gas introduction path 731B for the airtightness check joins the pipe between the valve V711B and the valve V721B of the first carrier gas introduction path 711B on the first raw material container 51B side, The downstream end portion of the gas introduction path 831B for the airtightness check joins the pipe between the valve V811B and the valve V821B of the second carrier gas introduction path 811B on the second raw material container 61B side.

Note that the position at which the N ₂ gas for airtightness check is supplied from the first airtightness check gas introduction paths 731A, 731B, 831A, and 831B is not limited to the above example. For example, for the first airtight check so that N ₂ gas for airtightness check is supplied from the upstream side of the valves V711A, V711B, V811A, V811B provided in the carrier gas introduction paths 711A, 711B, 811A, 811B. You may set the confluence | merging position of gas introduction path 731A, 731B, 831A, 831B.

Furthermore, each piping which comprises the raw material gas supply apparatus 12 is heated to the temperature more than the sublimation temperature of a raw material in order to prevent precipitation of the raw material in piping. As an example of the heating means, an example in which a tape heater is wound around each pipe is given, and electric power is supplied to these tape heaters from a power supply unit (not shown). In FIG. 2, the heated pipe (heated pipe) has a notation in which two broken lines are written together with a solid line indicating the pipe line.
As shown in FIGS. 2 and 5 to 6, the area where the piping is heated is divided into a plurality of heating areas 9 </ b> A to 9 </ b> C, and each heating area 9 </ b> A to 9 </ b> C can be heated independently. it can.

As shown in FIG. 2, the heating region 9 </ b> A includes a source gas common channel 42 and a branch channel 43, and a junction of the first source gas channel 421 and the second source gas channel 422. The heating area 9 </ b> A is always heated during the operation of the film forming apparatus 1.
In the heating region 9A, the heating means for heating each pipe corresponds to the “common heating unit” in the present embodiment.

  The heating region 9B includes the first source gas flow path 421, the source gas extraction paths 721A and 721B, the bypass paths 722A and 722B, and the first carrier gas introduction paths 711A and 711B on the first source gas supply unit 5 side. Part (on the downstream side of valves V711A and V711B) is included. Further, a part of the first dilution gas introduction path 261 (downstream of the valve V261) and a part of the first gas-tightness check gas introduction paths 731A and 731B (downstream of the valves V731A and V731B) are heated. Also good.

In the heating region 9B, the heating means for heating each pipe is based on a control signal from the control unit 200 described later, during the period in which the solid raw material in the first raw material containers 51A and 51B is sublimated. It is possible to switch between a heating state in which the inside is heated to a preset temperature and a stopped state in which heating is stopped when the first raw material containers 51A and 51B are replaced.
The heating means for heating each pipe in the heating region 9B and the external heating parts 52A and 52B for heating the first raw material containers 51A and 51B correspond to the “first heating part” in the present embodiment. . In the following description, the heating state / stop state of the first raw material containers 51A, 51B by the external heating units 52A, 52B and the heating state / stop state of the piping in the heating region 9B by the heating means are collectively referred to as “heating region 9B. "Heating state / stop state".

  On the other hand, the heating region 9C includes the second source gas flow path 422, the source gas extraction paths 821A and 821B, the bypass paths 822A and 822B, and the second carrier gas introduction path 811A on the second source gas supply unit 6 side. , 811B (on the downstream side of valves V811A and V811B). Further, a part of the second dilution gas introduction path 262 (downstream of the valve V262) and a part of the second gas-tightness check gas introduction paths 831A and 831B (downstream of the valves V831A and V831B) are heated. Also good.

In the heating region 9C, the heating means for heating each pipe is based on a control signal from the control unit 200 described later, during the period in which the solid raw material in the second raw material containers 61A and 61B is sublimated. It is possible to switch between a heating state in which the inside is heated to a preset temperature and a stopped state in which heating is stopped when the second raw material containers 61A and 61B are exchanged.
The heating means for heating each pipe in the heating region 9C and the external heating units 62A and 62B for heating the second raw material containers 61A and 61B correspond to the “second heating unit” in the present embodiment. . In the following description, the heating state / stopped state of the second raw material containers 61A, 61B by the external heating units 62A, 62B and the heating state / stopped state of the piping in the heating region 9C by the heating means are collectively referred to as “heating region 9C. "Heating state / stop state".

  Next, FIGS. 3 and 4 show the cabinet 13 that houses the first raw material containers 51A and 51B and the second raw material containers 61A and 61B provided in the above-described raw material gas supply apparatus 12. FIG. The cabinet 13 is divided into an upper first shelf 131 for accommodating the first raw material containers 51A, 51B and a lower second shelf 132 for accommodating the second raw material containers 61A, 61B. ing. The first shelf 131 and the second shelf 132 are openable and closable by the open / close door 133 and are insulative from each other when the open / close door 133 is closed.

  As shown in FIG. 4, on the floor surface of each shelf 131, 132, a socket part 134 that fixes each raw material container 51 </ b> A, 51 </ b> B, 61 </ b> A, 61 </ b> B to a preset arrangement position, and these raw material containers 51 </ b> A, 51 </ b> B. , 61A, 61B are provided from the lower surface side.

  In addition, when the raw material containers 51A, 51B, 61A, 61B are arranged at predetermined positions in the respective shelves 131, 132, the pipes 70, 80 connected to the raw material containers 51A, 51B, 61A, 61B ( 2), source gas extraction paths 721A and 721B, first carrier gas introduction paths 711A and 711B, source gas extraction paths 821A and 821B, second carrier gas introduction paths 811A and 811B shown in FIG. , Valve mechanisms 701 and 801 (constituting valves V723A, V723B, V722A, and V722B and valves V823A, V823B, V822A, and V822B in FIG. 2) are provided.

  Furthermore, the upper part of the cabinet 13 is supplied from the first raw material containers 51A and 51B, the second raw material containers 61A and 61B, the power supply unit that supplies power to the heating means of each pipe, and these power supply units. A control box 136 that houses a power control unit that increases or decreases power is provided.

  As shown in FIG. 1, the film forming apparatus 1 includes a control unit 200. The control unit 200 includes, for example, a computer including a CPU and a storage unit (not shown). The storage unit stores a program in which a group of steps (commands) for control related to the operation of the film forming apparatus 1 is assembled. . In the operation of the film forming apparatus 1, the wafer 100 is mounted on the mounting portion 22, the inside of the processing container 21 is evacuated, and then the source gas, the reactive gas, and the replacement gas are supplied to form a film by the ALD method. After that, the heating regions 9B and 9C are heated and stopped in accordance with the operation until the wafer 100 is unloaded and the replacement of the first raw material containers 51A and 51B and the second raw material containers 61A and 61B. The operation to switch to is included. This program is stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card, and installed in the computer therefrom.

Next, the operation of the film forming apparatus 1 will be described with reference to FIGS. For convenience of illustration, in these drawings, some of the reference numerals shown in FIG. 2 are omitted from the reference numerals given to components that do not appear in the description. In FIGS. 5 to 7, the open valve is denoted by “O”, and the closed valve is denoted by “S”. Further, in these drawings, when the heating regions 9A to 9C are in a heated state, the regions 9A to 9C are surrounded by a double line, and when they are in a stopped state, they are surrounded by a broken line. It is shown.
First, an outline of a film forming process using the source gas supply device 12 and the film forming processing unit 11 will be briefly described.

In the source gas supply device 12, one side of the first source gas supply unit 5 and the second source gas supply unit 6 is connected to the processing container 21 of the film forming unit 11. For example, in the example shown in FIG. 5, the second source gas supply unit 6 is connected to the processing vessel 21 with the two valves V424 and V422 provided on the second source gas channel 422 side opened. On the other hand, in the first source gas channel 421, the downstream valve V423 is closed, and the first source gas supply unit 5 is disconnected from the processing vessel 21.
The heating region 9B (first source gas supply unit 5) and the heating region 9C (second source gas supply unit 6) are both in a heated state.

Since the second source gas supply unit 6 is in a heated state, the heated WCl ₆ is sublimated in the second source containers 61A and 61B. The electric power supplied to the external heating units 62A and 62B is set to a temperature equal to or higher than the sublimation temperature of WCl ₆ that is a solid material, for example, 150 ° C.

  In the film formation processing unit 2, the wafer 100 is mounted on the mounting unit 22, and the processing chamber 21 is evacuated to heat the wafer 100. When the preparation for film formation is completed, the carrier gas is introduced into the second raw material containers 61A and 61B from the second carrier gas introduction paths 811A and 811B, and a predetermined amount of dilution is performed from the second dilution gas introduction path 262. Supply gas. When the valve V1 on the processing container 21 side is opened, the sublimated raw material is transported by the carrier gas, diluted with the dilution gas, and then supplied to the processing container 21 as the raw material gas.

When the source gas is supplied into the processing container 21 shown in FIG. 1, WCl ₆ is adsorbed on the surface of the wafer 100. When a tungsten film is formed by the ALD method, the valve V1 is closed after a predetermined time has elapsed, and the supply of the source gas to the processing vessel 21 is stopped. Next, a replacement gas (N ₂ gas) is supplied from the replacement gas flow path 28 to the processing container 21 to replace the gas in the processing container 21. Subsequently, when the valve V27 is opened and a reaction gas (mixed gas of H ₂ gas and inert gas) is supplied from the reaction gas channel 27 to the processing container 21, WCl ₆ adsorbed on the wafer 100 is reduced by H _2. Then, for example, a single atomic layer tungsten film is formed.

Thereafter, the supply of the reaction gas is stopped by closing the valve V27, and then the replacement gas is supplied to the processing container 21 to replace the gas in the processing container 21. Thus, a tungsten film having a predetermined thickness is formed in the processing vessel 21 by repeating the cycle of supplying the source gas containing WCl ₆ → the replacement gas → the reaction gas → the replacement gas a plurality of times.

  When the above-described film forming process is performed on a large number of wafers 100, the solid raw materials in the second raw material containers 61A and 61B are consumed. After film formation, the source of the source gas is switched from the second source gas supply unit 6 to the first source gas supply unit 5.

  In this case, as shown in FIG. 6, the valve V424 (second separation valve) of the second source gas flow path 422 on the second source gas supply unit 6 side is closed to supply the second source gas. The part 6 is separated from the processing container 21. On the other hand, the valve V423 (second separation valve) and V421 of the first source gas flow path 421 are opened, and the first source gas supply unit 5 is connected to the processing vessel 21. Since the heating region 9B is in a heated state and ready to supply the source gas, the wafer is introduced into the first source container 51A, 51B from the first carrier gas introduction path 711A, 711B. The film forming apparatus 1 can be continuously operated without interrupting the film forming process 100.

  On the other hand, in order to replace the second raw material containers 61A and 61B, the piping in the heating region 9C heated to about 150 ° C. above the sublimation temperature of the raw materials and the second raw material containers 61A and 61B are cooled. There is a need to. Therefore, the heating region 9C is switched from the heating state to the stop state. At this time, in order to promote the cooling of each part in the heating region 9C, in each piping of the second source gas supply unit 6, the second source containers 61A and 61B, and further in the second shelf 132 of the cabinet 13. A cooling gas (for example, air at normal temperature) may be passed.

When the temperature of the second raw material containers 61A, 61B, etc. decreases to a predetermined temperature, the open / close door 133 on the second shelf 132 side of the cabinet 13 shown in FIG. 3 is opened, and the raw material gas extraction paths 821A, 821B and The second raw material containers 61A and 61B are removed from the second carrier gas introduction paths 811A and 811B (FIG. 6). Thereafter, new second raw material containers 61A and 61B containing solid raw materials are attached.
In these operations, the equipment in the heating region 9B supplying the source gas is in a heated state, but the first shelf 131 in which these equipments are accommodated is connected to the second shelf 132. On the other hand, the second raw material containers 61A and 61B can be exchanged without any trouble because they are sufficiently insulated.

When the replacement of the second raw material containers 61A and 61B is completed, an airtight check is performed to check whether leakage from the connecting portion with the raw material gas extraction paths 821A and 821B and the second carrier gas introduction paths 811A and 811B occurs. To do.
In the airtight check, the second source gas supply unit 6 is disconnected from the processing container 21 and the second source gas supply unit 6 is also disconnected from the carrier gas supply source 31 side (valves V811A, V811B, V424, V262 is closed). Then, the valves V831A and V831B are opened, and N ₂ gas having a preset pressure is supplied from the airtight check gas supply source 32 as an airtight check gas.

In the example shown in FIG. 7, the valves V822A, V822B, V823A, and V823B in the vicinity of the second raw material containers 61A and 61B are closed, while the valves V825A and V825B are opened to bypass the flow paths 822A and 822B. Therefore, the airtight check is performed in a state where the second raw material containers 61A and 61B are bypassed.
On the other hand, an airtight check in the second source gas supply unit 6 including the second source containers 61A and 61B may be performed without using the bypass channels 822A and 822B as necessary.

In the second source gas supply unit 6 separated from the adjacent system (carrier gas supply source 31 and film formation processing unit 11), the second source gas supply is performed unless the respective connection parts are connected in an airtight manner. N ₂ gas leaks from the portion 6 to the outside. Such leakage of N ₂ gas is caused by a decrease in the indicated value of a pressure gauge (not shown) provided in the second raw material gas supply unit 6 or a mass flow meter (not shown) provided on the airtight check gas supply source 32 side. Can be detected as an increase in the flow rate of N ₂ gas.

  Here, in the heating region 9C in the cooling state, the second source gas flow path 422 is always adjacent to the heating region 9A in the heating state. For this reason, the temperature of the gas in the 2nd source gas channel 422 may rise by heat transfer via piping of the 2nd source gas channel 422, or valve V424. As a result, if the heated gas flows into the region in the second source gas supply unit 6 where the airtightness check is performed, pressure and flow fluctuations may occur, and there is a risk that correct airtightness check cannot be performed.

Therefore, in the raw material gas supply apparatus 12 of this example, as shown in FIG. 7, the valve V422 (second inflow prevention valve) provided on the upstream side of the valve V424 (second separation valve) is closed. Airtight check is performed in the state. Thereby, it is possible to prevent the heated gas from flowing into the region where the airtightness check is performed, and to perform an accurate airtightness check.
Further, in order to suppress the occurrence of pressure fluctuations due to the expansion of the gas in the heating area 9C where the airtightness check is performed due to the heat received from the heating area 9A, the heating area 9A and the heating area 9C subject to the airtightness check are It is preferable to arrange them as far apart as possible. In this respect, the above-described two valves V424 and V422 may be arranged at least 10 cm or more, preferably several 10 cm or more apart.

  In the piping in the region sandwiched between the two valves V424 and V422 in the closed state, the temperature of the fluid may increase due to heat transfer from the heating region 9A, and the internal pressure may increase. Therefore, a pipe having the pressure resistance corresponding to the pressure increase may be adopted as the pipe constituting the second source gas flow path 422. In addition, when the pressure in the second source gas flow path 422 becomes equal to or higher than a preset pressure, a depressurization line for discharging the internal fluid may be connected.

If a leak is detected as a result of the airtightness check using the above-described method, the location where the leak has occurred is identified by a leak checker or the like, and measures such as retightening the joint or re-installing the pipe seal are taken.
On the other hand, if the occurrence of leakage is not detected, the valves V831A and V831B are closed to stop the supply of N ₂ gas from the airtight check gas supply source 32 side, and the inside of the second source gas supply unit 6 is removed. The valves V825A and V825B of the bypass flow paths 822A and 822B are closed, while the valves V811A, V811B, V822A, V822B, V823A, V823B, V422, and V262 are opened, and the second raw material containers 61A and 61B are opened. Go online. Thereafter, the heating region 9C is switched to the heating state, and the apparatus waits in a state where the supply of the raw material gas toward the processing container 21 can be started.

  As described above, with reference to FIGS. 5 to 7, the source of the source gas is switched to the first source gas supply unit 5 from the state in which the source gas is supplied from the second source gas supply unit 6 side. The description has been given by taking, as an example, the operation of waiting in a state where the raw material gas can be supplied from the second raw material gas supply unit 6 side after the replacement of the raw material containers 61A and 61B and the airtight check.

  Contrary to the above example, from the state in which the source gas is supplied from the first source gas supply unit 5 side, the source of the source gas is switched to the second source gas supply unit 6, and the first source container The case of exchanging 51A, 51B, etc. is the same except that the contents of the operation are exchanged between the first source gas supply unit 5 side and the second source gas supply unit 6 side.

  That is, (1) the valve V423 (first disconnecting valve) of the first source gas flow path 421 on the first source gas supply unit 5 side is closed, and the first source gas supply unit 5 is removed from the processing vessel 21. On the other hand, the valve V424 (second separation valve) of the second source gas flow path 422 is opened, the second source gas supply unit 6 is connected to the processing vessel 21, and the second source gas supply unit The source gas is supplied from the 6th side. Thereafter, (2) after the temperature is lowered with the heating region 9B being stopped, the first raw material containers 51A and 51B are replaced. (3) The airtight check of the first source gas supply unit 5 is performed with the valves V423 (first disconnect valve) and V421 (first inflow prevention valve) of the first source gas flow path 421 being closed. (4) Return the heating area 9B to the heated state and wait. (5) Since the heating region 9A in the heated state and the heating region 9B subject to the airtightness check are always separated as much as possible, at least two valves V423 and V421 provided in the first source gas flow path 421 are provided. It is preferable to arrange them more than 10 cm or more, preferably several 10 cm or more apart.

  The raw material gas supply apparatus 12 according to the present embodiment has the following effects. With respect to the 1st, 2nd source gas supply parts 5 and 6 provided with detachable 1st source containers 51A and 51B and 2nd source containers 61A and 61B, a heating state and a stop state which stopped heating 1st and 2nd heating parts (external heating parts 52A and 52B, external heating parts 62A and 62B, and heating means for piping of heating regions 9B and 9C) that can be switched between are provided, and these first and second raw materials are provided. In the source gas common channel 42 to which source gas is supplied from the gas supply units 5 and 6, an independent common heating unit (heating means for heating the piping of the heating region 9 </ b> A) is provided. For this reason, even during the period when the raw material containers 51A and 51B (61A and 61B) of the first and second raw material gas supply units 5 (6) on one side are replaced, the second and first first and second raw material gas supply units 5 (6) are replaced. The supply of the source gas from the source gas common flow path 42 can be continued using the source gas supply unit 6 (5).

Here, in the embodiment described with reference to FIGS. 3 to 7, an example in which the two source gas supply units 5 and 6 are connected in parallel to the source gas common flow path 42 is shown. Three or more source gas supply units may be connected in parallel to the gas common channel 42. In this case, for example, in order to replace the raw material container, the one raw material gas supply unit that is in a stopped state is regarded as the “first raw material gas supply unit”, and the raw material gas is supplied or is in a standby state. Thus, the remaining source gas supply unit in the heated state can be regarded as a “second source gas supply unit”.
Further, the number of source containers 51A, 51B, 61A, 61B provided in each source gas supply unit 5, 6 is not limited to two, and one source container 51 may be provided, or three or more. It may be provided.

3 and 4, the first shelf 131 for accommodating the first raw material containers 51A and 51B and the second shelf 132 for accommodating the second raw material containers 61A and 61B are stacked one above the other. Although the configured vertical cabinet 13 is shown, the specific configuration of the cabinet 13 is not limited to the vertical example. For example, the horizontal cabinet 13 in which the first shelf 131 and the second shelf 132 are arranged adjacent to each other in the horizontal direction may be used. In this case, the control box 136 may be disposed on the upper surface side of the first and second shelf portions 131 and 132, or may be disposed on the side surface side or the back surface side. When the cabinet 13 is configured as a horizontal type, the horizontal cabinet 13 is incorporated into the film forming apparatus 1 by being disposed below the processing container 21 provided in the film forming processing unit 11 shown in FIG. In addition, an increase in the footprint of the film forming apparatus 1 can be suppressed.
The first shelf 131 and the second shelf 132 are not limited to being configured in the common cabinet 13, and the first shelf and the second shelf are respectively separated in separate cabinets. Of course, 131 and 132 may be provided.

Furthermore, as a raw material that can be supplied by the film forming unit 11 of the present invention, a raw material that is solid when filled in the raw material container is used. In addition to the above-described WCl ₆ , Ni (II), N′-jetter An example using butyl amidinate (Ni (II) (tBu-AMD) ₂ , hereinafter referred to as “Ni (AMD) ₂ ”) can be given. When Ni (AMD) ₂ is used as a raw material, a nickel (Ni) film is formed on the surface of the wafer 100 using ammonia gas as a reactive gas (reducing gas).
Ni (AMD) ₂ is a solid when filled in the raw material container, but may be vaporized via a liquid state when heated. In the present invention, not only the sublimation from the solid but also the gas raw material generation path that is once vaporized after being in the liquid state in the raw material containers 51 and 61 is referred to as “solid sublimation” for convenience. To do.

  As for the configuration of the film formation processing unit 11, in addition to the sheet format in which the wafers are mounted on the mounting table one by one and the film formation process is performed, the film is formed by holding the wafers on a wafer boat that holds a large number of wafers. It may be a batch type in which a plurality of wafers are arranged on a rotating mounting table to form a film.

  Furthermore, the film forming unit of the present invention is not limited to the configuration that performs the ALD method. For example, even in a film formation processing unit that performs a CVD method, a carrier gas is introduced into a raw material container containing a solid raw material via a carrier gas introduction path, and a raw material gas containing a sublimated raw material is formed into a raw material film Any configuration can be applied as long as it is supplied to the processing unit. Further, also in this CVD method, the first CVD source gas is supplied into the processing container to form the first CVD film, and then the second CVD source is different from the first CVD source gas. The second CVD film may be formed using the source gas. In this case, at least one of the first CVD source gas and the second CVD source gas introduces the carrier gas into the source container containing the solid source, and the source material includes the sublimated source and carrier gas. What is necessary is just to set it as the structure which supplies gas to a process container. Thus, the present invention can also be applied to a technique in which both raw material gases are supplied into the processing vessel a plurality of times through replacement of the atmosphere with a replacement gas and different types of thin films are stacked to form a film. Furthermore, the raw material gas supply device of the present invention is also applicable to a case where a raw material obtained by sublimating a solid raw material is supplied as an etching gas or a heat treatment gas together with a carrier gas to an etching device or a heating device which is a consumption area. Can do.

Furthermore, the source gas that can be supplied using the present invention is Ti, which is an element of the fourth period of the periodic table, such as Al and Si, which are elements of the third period of the periodic table, in addition to the WCl _{6 described} above. Ba, which is an element of the sixth period of the periodic table, such as Zr, Mo, Ru, Rh, Pd, Ag, which is an element of the fifth period of the periodic table, such as Cr, Mn, Fe, Co, Cu, Zn, Ge, A source gas containing an element such as Hf, Ta, W, Re, Ir, or Pt may be used. Examples of these source gases include cases where an organic metal compound, an inorganic metal compound, or the like is used. The reaction gas to be reacted with the source gas is an oxidizing gas using O ₂ , O ₃ , H ₂ O or the like, NH ₃ , H ₂ , HCOOH, CH ₃ COOH, CH ₃ OH, C ₂ H ₅ OH, or the like. A carbonization reaction gas using a reducing gas, CH ₄ , C ₂ H ₆ , C ₂ H ₄ , C ₂ H ₂ or the like, a nitriding reaction gas using NH ₃ , NH ₂ NH ₂ , N _2, or the like can be used. Further, a plurality of source gas supply devices may be provided, and the present invention may be applied to the case where two or more types of source gases are intermittently supplied to the film formation processing unit to form an alloy or composite metal oxide film.

In addition, when the first raw material container 51 or the second raw material container 61 is replaced, the replacement is performed before removing one of the first and second raw material containers 51 and 61 (61). It is preferable to remove the source gas remaining in the source gas flow paths 421 and (422) to which the source containers 51 and (61) are connected by drawing with a purge gas. In addition, after attaching a new source container 51, (61) to the source gas extraction path 821 or the carrier gas introduction path 811, the atmosphere that has entered the first source gas channel 421 or the second source gas channel 422 In order to exhaust the atmosphere, a purge gas is preferably introduced and sucked. A configuration example suitable for such a case is shown below.
For example, as shown in FIG. 8, in the plurality of film formation processing sections 120A to 120D for performing film formation processing on the wafer 100, and in each of the film formation processing sections 120A to 120D, the first raw material container 51 or the second An example in which a common second vacuum exhaust unit 46 for exhausting the purge gas at the time of replacement of the raw material container 61 is provided.

  The film forming process sections 120A to 120D will be described by taking the film forming process section 120A and the second vacuum exhaust unit 46 connected to the film forming process section 120A as an example. As shown in FIG. 9, the film formation treatment section 120 </ b> A includes the film formation apparatus shown in FIG. 1, and is provided on the downstream side of the first inflow prevention valve V <b> 421 of the first source gas flow path 421 and the first separation valve V <b> 423. One end of the branch path 451 is connected to the upstream side. A branch path 452 is connected to the second source gas flow path 422 downstream of the second inflow prevention valve V422 and upstream of the second disconnection valve V424. The branch paths 451 and 452 are each connected to a common exhaust path 45, and the exhaust path 45 is connected to the second vacuum exhaust section 46. In FIG. 9, some piping shown in FIG. 1 is omitted in order to prevent the drawing from being complicated. Further, in FIG. 8, the respective film forming treatment sections 120A to 120D are simplified.

  Next, the operation of the above embodiment will be described. Here, an example in which an airtight check gas flowing from the airtight check gas introduction path 831 is used as the purge gas will be described. For example, when replacing the second raw material container 61, first, the valve V424 of the second raw material gas flow path 422 is closed, and the second raw material gas supply unit 6 is disconnected from the processing container 21. On the other hand, the valve V423 (second disconnecting valve) and V421 of the first source gas flow path 421 are opened to connect the first source gas supply unit 5 to the processing vessel 21. Further, the valve V811 is closed and the valve V831 is opened. As a result, the purge gas flows into the second raw material container 61 from the gas introduction path 831 for airtightness check, and the pressure in the second raw material container 61 rises to atmospheric pressure.

Further, the valves V822 and V823 are closed, and the valves V825 and V452 are opened. As a result, the purge gas supplied from the gas-tightness check gas introduction path 831 flows through the bypass flow path 822, and from the second vacuum exhaust section 46 via the second source gas flow path 422, the branch path 452, and the exhaust path 45. Exhausted. As a result, the source gas remaining in the second source gas channel 422 is exhausted.
Thereafter, the second raw material container 61 is removed from the raw material gas extraction passage 821 and the second carrier gas introduction passage 811.

Then, a new second raw material container 61 is attached to the raw material gas extraction passage 821 and the second carrier gas introduction passage 811. Further, the valve V825 is closed, the valve V822 and the valve V823 are opened, and a purge gas is caused to flow into the new second raw material container 61. This purge gas is supplied to the raw material gas extraction passage 821, the second raw material gas passage 422, and the branch passage. The second vacuum exhaust part 46 evacuates through 452 and the exhaust path 45. As a result, the atmospheric atmosphere that has entered the second raw material container 61, the portion upstream of the valve V823 in the raw material gas extraction passage 821 and the portion downstream of the valve V822 in the second carrier gas introduction passage 811 is removed. These parts are in a vacuum atmosphere.
Thereafter, the valves V831, V821, V822, V823, V824, V422 and V452 are closed.

  For example, when exchanging the second raw material container 61, purge gas is caused to flow through the second raw material gas flow path 422, and the purge gas exhausted from the exhaust path 45 is exhausted by the vacuum exhaust part 24 connected to the processing container 21. There are the following disadvantages. That is, when the raw material gas is supplied from the first raw material container 51 to the processing container 21 and the film forming process is performed, if the purge gas is exhausted from the vacuum exhaust part 24, the purge gas diffuses into the processing container 21 or the vacuum By flowing purge gas through the exhaust part 24, the pressure in the processing container 21 changes, which may adversely affect the film forming process.

  In particular, when performing a film forming process by the ALD method, the raw material gas is intermittently supplied to the processing container 21 while the opening of the exhaust pipe connecting the processing container 21 and the vacuum exhaust unit 24 is fixed and the exhaust is performed at a constant flow rate. To supply. For this reason, the pressure in the processing container 21 repeatedly increases and decreases, and when the purge gas flows into the evacuation unit 24, the pressure in the processing container 21 is likely to be disturbed, which may adversely affect the film forming process. Therefore, when the second raw material container 61 is replaced and the purge gas is exhausted, it is necessary to temporarily stop the film forming process.

In contrast, according to the above-described embodiment, when the raw material gas is supplied from the first raw material container 51 to the processing container 21 to perform the film forming process, the second raw material container 61 is replaced. Since the purge gas flowing through the second raw material container 61 is exhausted from the second vacuum exhaust part 46, adverse effects on the processing container 21 caused by exhausting the purge gas from the vacuum exhaust part 24 can be prevented. It is not necessary to stop the film forming process.
Further, when replacing the first raw material container 51, the same effect is obtained by exhausting the purge gas from the second vacuum exhaust part 46 via the first raw material gas channel 421, the branch channel 451, and the exhaust channel 45. be able to.

  In the present invention, a mass flow meter may be provided in the exhaust passage 45, and before the raw material gas is allowed to flow from the replaced raw material container, for example, the second raw material container 61 to the processing container 21, the raw material gas is caused to flow through the exhaust passage 45, After confirming the flow rate of the raw material gas, the raw material gas may flow from the second raw material container 61 to the processing container 21 side. This eliminates the need to check the flow rate of the raw material gas after switching from the second raw material container 61 to the processing container 21, thereby reducing the downtime when replacing the raw material containers 51 and 61. it can.

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 100 Wafer 11 Film-forming process part 12 Raw material gas supply apparatus 200 Control part 41, 41A, 41B
Carrier gas introduction channel 42 Source gas common channel 421 First source gas channel 422 Second source gas channel 5 First source gas supply parts 51, 51A, 51B
First raw material container 52, 52A, 52B
External heating unit 6 Second source gas supply unit 61, 61A, 61B
Second raw material container 62, 62A, 62B
External heating unit 711, 711A, 711B
First carrier gas introduction path 721, 721A, 721B
Source gas extraction passages 731, 731A, 731B
First gas check path for airtightness check 811, 811A, 811B
Second carrier gas introduction path 821, 821A, 821B
Source gas extraction path 831, 831A, 831B
Second airtight check gas introduction passages 9A to 9C Heating region

Claims (6)

In the raw material gas supply device for supplying the raw material obtained by sublimating the solid raw material in the raw material container to the consumption area together with the carrier gas,
A raw material gas common flow path for sending out a carrier gas containing a sublimated raw material to the consumption area,
A first raw material gas passage whose downstream side is connected to the raw material gas common passage, a first carrier gas introduction passage through which the carrier gas is introduced, and the first separation valve; A first source gas supply comprising: a first source container containing the solid source provided detachably with respect to the upstream side of the source gas channel and the downstream side of the first carrier gas introduction channel And
A second raw material gas passage whose downstream side is connected to the raw material gas common passage, a second carrier gas introduction passage through which the carrier gas is introduced, and a second carrier gas through the second isolation valve; A second source gas supply comprising a second source container containing the solid source provided detachably with respect to the upstream side of the source gas channel and the downstream side of the second carrier gas introduction channel And
A common heating section for heating the source gas common flow path;
The first source gas supply unit and the second source gas supply unit are each provided with a first heating unit and a second heating unit for sublimating the solid source. Raw material gas supply device.   Control that outputs a control signal for switching the first heating unit and the second heating unit, independently of each other, between a heating state for sublimating the solid material and a stopped state in which heating is stopped The raw material gas supply apparatus according to claim 1, further comprising a section. A first gas-tightness check gas introduction path for introducing gas for gas-tightness check into the first source gas supply unit;
3. The raw material gas supply apparatus according to claim 1, further comprising: a second gas tightness check gas introduction path for introducing a gas for air tightness check into the second raw material gas supply unit. . In the first source gas flow path between the first isolation valve and the first source container, heating by the first heating unit is stopped and an airtight check using an airtightness check gas is performed. A first inflow prevention valve for preventing the gas heated by the common heating unit from flowing into the region where the airtightness check is performed,
In the second source gas flow path between the second isolation valve and the second source container, heating by the second heating unit is stopped and an airtight check using an airtightness check gas is performed. In this case, a second inflow prevention valve is provided to prevent the gas heated by the common heating unit from flowing into the region where the airtightness check is performed. Raw material gas supply device.   Each of the first shelf and the second shelf is provided with a first shelf and a second shelf, respectively, and the first shelf and the second shelf are insulated from each other. 5. The raw material gas supply apparatus according to claim 1, further comprising a common cabinet. In a film forming apparatus that performs a film forming process by supplying a source gas to a substrate,
6. The raw material gas supply device according to claim 1, a processing container connected to the raw material gas common flow path and having a mounting portion for mounting a substrate disposed therein, and the processing A film forming apparatus comprising: an exhaust mechanism for evacuating the inside of the container.

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