JP2016186975A - Led module and led module manufacturing method - Google Patents

Led module and led module manufacturing method Download PDF

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JP2016186975A
JP2016186975A JP2015066032A JP2015066032A JP2016186975A JP 2016186975 A JP2016186975 A JP 2016186975A JP 2015066032 A JP2015066032 A JP 2015066032A JP 2015066032 A JP2015066032 A JP 2015066032A JP 2016186975 A JP2016186975 A JP 2016186975A
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electrode
led chip
package substrate
sealing resin
reflector
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JP6507007B2 (en
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雅充 山下
Masamitsu Yamashita
雅充 山下
高佳 藤元
Takayoshi Fujimoto
高佳 藤元
誠樹 森
Seiki Mori
誠樹 森
岡 裕
Yutaka Oka
裕 岡
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Toray Engineering Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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Abstract

PROBLEM TO BE SOLVED: To provide an LED module that prevents corrosion of the electrode of an LED chip and the electrode of a package substrate, and prevents disconnection of the connection portion between the electrode of the LED module and a wire and the connection portion between the electrode of the package substrate and a wire.SOLUTION: In an LED module in which an LED chip 2 is mounted on an electrode 5 of a package substrate 1, an electrode of the LED chip 2 and the electrode 5 of the package substrate 1 are electrically connected to each other by a wire 6, a reflector 4 is arranged around the LED chip 2, and the LED chip 2, the inner circumferential surface of the reflector 4, the electrode 5 of the package substrate 1, and the wire 6 are filled with a sealing resin 3, the same kind of inorganic insulation membranes 7 are integrally formed at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1.SELECTED DRAWING: Figure 1

Description

本発明は、ワイヤー断線及び封止樹脂内への大気や水分の浸入を抑制したLEDモジュールおよびその製造方法に関するものである。   The present invention relates to an LED module that suppresses intrusion of air and moisture into a wire breakage and sealing resin, and a manufacturing method thereof.

従来から、LEDチップを樹脂で封止したLEDモジュールが照明具として広く用いられている。LEDモジュールの一般的な構造は、図2に示す断面図のようにパッケージ基板1の電極5上にLEDチップ2を搭載し、そのLEDチップ2の電極とパッケージ基板1の電極5とをワイヤー6で電気的に接続するととともに、LEDチップ2の周囲に光を反射させるリフレクター4を配置し、リフレクター4の内周面、ワイヤー6、及びLEDチップ2並びにパッケージ基板1の電極5からなる凹部空間にシリコーン樹脂からなる封止樹脂3を充填して大気から封止した構造となっている。   Conventionally, LED modules in which LED chips are sealed with resin have been widely used as lighting fixtures. The general structure of the LED module is that the LED chip 2 is mounted on the electrode 5 of the package substrate 1 as shown in the cross-sectional view of FIG. 2, and the electrode 6 of the LED chip 2 and the electrode 5 of the package substrate 1 are connected to the wire 6. And a reflector 4 that reflects light around the LED chip 2 is arranged, and the inner peripheral surface of the reflector 4, the wire 6, the LED chip 2, and the recessed space composed of the electrode 5 of the package substrate 1 are arranged. The sealing resin 3 made of silicone resin is filled and sealed from the atmosphere.

LEDチップ2は、点灯、消灯により加熱、冷却を繰り返すことになるが、その際の熱膨張、収縮により、パッケージ基板1、リフレクター4、ワイヤー6、及びLEDチップ2等の各素材の線膨張係数の違いによる応力が発生し、接続が弱いLEDチップ2の電極又はパッケージ基板1の電極5とワイヤー6との接続部が断線してLEDチップ2が点灯しなくなるという問題があった。   The LED chip 2 is repeatedly heated and cooled by turning on and off, and the linear expansion coefficient of each material such as the package substrate 1, the reflector 4, the wire 6, and the LED chip 2 due to thermal expansion and contraction at that time. There is a problem in that the stress due to the difference between the electrodes and the electrode of the LED chip 2 that is weakly connected or the connection part between the electrode 5 of the package substrate 1 and the wire 6 is disconnected and the LED chip 2 does not light.

また、シリコーン樹脂からなる封止樹脂3と、セラミック等からなるリフレクター4との密着性が弱く、LEDチップ2の点灯、消灯による膨張、収縮により、封止樹脂3の剥がれが発生して隙間が生じ、そこから大気や水分が浸入してLEDチップ2の電極やパッケージ基板1の電極5が腐食するという問題があった。   In addition, the adhesion between the sealing resin 3 made of silicone resin and the reflector 4 made of ceramic is weak, and the sealing resin 3 peels off due to expansion and contraction caused by turning on and off of the LED chip 2, thereby creating a gap. There arises a problem that air and moisture enter from there and the electrodes of the LED chip 2 and the electrodes 5 of the package substrate 1 corrode.

特許文献1(特開2011−134786号公報)には、銀からなるリフレクターの腐食を防止するために基板の内周面に無機絶縁層を形成した構成が記載されている。   Patent Document 1 (Japanese Patent Laid-Open No. 2011-134786) describes a configuration in which an inorganic insulating layer is formed on the inner peripheral surface of a substrate in order to prevent corrosion of a reflector made of silver.

しかしながら、特許文献1に記載のものは、リフレクターには無機絶縁層が形成されているので腐食を防止できるが、LEDチップの電極やパッケージ基板の電極の表面に無機絶縁層が形成されていないため、LEDチップの電極やパッケージ基板の電極の腐食を防止することができない。また、LEDチップの電極又はパッケージ基板の電極とワイヤーとの接続部の断線を防止することもできない。   However, although the thing of patent document 1 can prevent corrosion since the inorganic insulating layer is formed in the reflector, since the inorganic insulating layer is not formed in the surface of the electrode of a LED chip, or the electrode of a package board | substrate. The corrosion of the electrode of the LED chip and the electrode of the package substrate cannot be prevented. In addition, disconnection of the connection portion between the electrode of the LED chip or the electrode of the package substrate and the wire cannot be prevented.

特許文献1:特開2011−134786号公報   Patent Document 1: Japanese Patent Application Laid-Open No. 2011-134786

本発明は、LEDチップの電極及びパッケージ基板の電極の腐食を防止するとともに、LEDチップの電極とワイヤーとの接続部及びパッケージ基板の電極とワイヤーとの接続部の断線を防止することを課題とする。   It is an object of the present invention to prevent corrosion of an electrode of an LED chip and an electrode of a package substrate, and to prevent disconnection of a connection portion between the electrode of the LED chip and a wire and a connection portion of the electrode of the package substrate and the wire. To do.

上記課題を解決するために本発明は、パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置され、前記LEDチップ、前記リフレクターの内周面、前記パッケージ基板の電極、及び前記ワイヤーが封止樹脂で充填されたLEDモジュールであって、前記封止樹脂と前記リフレクターとの境界、前記封止樹脂と前記LEDチップとの境界、及び前記封止樹脂と前記パッケージ基板の電極との境界に、同種の無機絶縁膜が一体的に成膜されていることを特徴とするLEDモジュールを提供するものである。   In order to solve the above-described problem, the present invention provides an LED chip mounted on an electrode of a package substrate, and the electrode of the LED chip and the electrode of the package substrate are electrically connected by a wire, A reflector is disposed, the LED chip, an inner peripheral surface of the reflector, an electrode of the package substrate, and an LED module in which the wire is filled with a sealing resin, a boundary between the sealing resin and the reflector, An LED module, wherein an inorganic insulating film of the same type is integrally formed at a boundary between the sealing resin and the LED chip and a boundary between the sealing resin and the electrode of the package substrate. It is to provide.

この構成により、封止樹脂とリフレクターとの間に隙間が生じることを防止して大気や水分が浸入することが防げることにより、LEDチップの電極及びパッケージ基板の電極の腐食を防止することができるとともに、LEDチップの電極とワイヤーとの接合部分及びパッケージ基板の電極とワイヤーとの接合部分とが無機絶縁膜で押さえられた構成となることにより、LEDチップの電極とワイヤーとの接続部及びパッケージ基板の電極とワイヤーとの接続部の断線を防止することができる。   With this configuration, it is possible to prevent corrosion of the electrode of the LED chip and the electrode of the package substrate by preventing the formation of a gap between the sealing resin and the reflector and preventing air and moisture from entering. In addition, the bonding portion between the LED chip electrode and the wire and the bonding portion between the package substrate electrode and the wire are held by the inorganic insulating film. The disconnection of the connection part between the electrode of the substrate and the wire can be prevented.

前記無機絶縁膜は、Si系の膜としてもよい。   The inorganic insulating film may be a Si-based film.

この構成により、シリコーン樹脂からなる封止樹脂との密着性が向上する。   With this configuration, adhesion with a sealing resin made of a silicone resin is improved.

また、前記Si系の膜は、SiCN膜からなる膜としてもよい。   The Si-based film may be a film made of a SiCN film.

この構成によって、シリコーン樹脂からなる封止樹脂との密着性が向上する。   With this configuration, adhesion with a sealing resin made of a silicone resin is improved.

また、前記無機絶縁膜は、バッファ層とバリア層とが積層された構成としてもよい。   The inorganic insulating film may have a structure in which a buffer layer and a barrier layer are stacked.

この構成により、シリコーン樹脂からなる封止樹脂との密着性が向上するとともに、バリア性が向上して大気や水分の浸入をさらに防止できる。   With this configuration, the adhesion with the sealing resin made of a silicone resin is improved, and the barrier property is improved to further prevent the intrusion of air and moisture.

さらに、前記バリア層はSiO2膜又はAL2O3膜からなるように構成してもよい。 Furthermore, the barrier layer may be composed of a SiO2 film or an AL2O3 film.

この構成により、シリコーン樹脂からなる封止樹脂との密着性が向上し、大気や水分の浸入をさらに防止できるとともに、光が透過しやすいように透明性を確保することができる。   With this configuration, the adhesion with the sealing resin made of a silicone resin is improved, the intrusion of air and moisture can be further prevented, and transparency can be ensured so that light can easily pass through.

また、上記課題を解決するために本発明は、パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置されたモジュールの前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に同種の無機絶縁膜を一体的に成膜する成膜工程と、前記無機絶縁膜が成膜された前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に封止樹脂を充填して、前記LEDチップ、前記ワイヤー、及び前記リフレクターの内周面を前記封止樹脂で封止する封止工程を備えたことを特徴とするLEDモジュールの製造方法を提供するものである。   In order to solve the above problems, the present invention provides an LED chip mounted on an electrode of a package substrate, and the electrode of the LED chip and the electrode of the package substrate are electrically connected by a wire, A film forming step of integrally forming the same kind of inorganic insulating film on the LED chip, the inner peripheral surface of the reflector, and the electrode of the package substrate in which the reflector is disposed around the reflector, and the inorganic insulating film is formed. The LED chip, the inner peripheral surface of the reflector, and the electrode of the package substrate are filled with a sealing resin, and the inner peripheral surfaces of the LED chip, the wire, and the reflector are sealed with the sealing resin. The manufacturing method of the LED module characterized by providing the sealing process to stop is provided.

この製造方法により、封止樹脂とリフレクターとの間に隙間が生じることを防止して大気や水分が浸入することが防げることにより、LEDチップの電極及びパッケージ基板の電極の腐食を防止することができるとともに、LEDチップの電極とワイヤーとの接合部分及びパッケージ基板の電極とワイヤーとの接合部分とが無機絶縁膜で押さえられた構成となることにより、LEDチップの電極とワイヤーとの接続部及びパッケージ基板の電極とワイヤーとの接続部の断線を防止することができるLEDモジュールを製造することができる。   By this manufacturing method, it is possible to prevent the formation of a gap between the sealing resin and the reflector and prevent the intrusion of air and moisture, thereby preventing the corrosion of the electrode of the LED chip and the electrode of the package substrate. In addition, the connection portion between the electrode of the LED chip and the wire and the connection portion between the electrode of the LED chip and the wire and the connection portion of the electrode of the package substrate and the wire are pressed by the inorganic insulating film, It is possible to manufacture an LED module that can prevent disconnection of the connection portion between the electrode of the package substrate and the wire.

上記のように、パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置され、前記LEDチップ、前記リフレクターの内周面、前記パッケージ基板の電極、及び前記ワイヤーが封止樹脂で封止されたLEDモジュールであって、前記封止樹脂と前記リフレクターとの境界、前記封止樹脂と前記LEDチップとの境界、及び前記封止樹脂と前記パッケージ基板の電極との境界に、同種の無機絶縁膜が一体的に成膜されていることを特徴とするLEDモジュールにより、LEDチップの電極及びパッケージ基板の電極の腐食を防止するとともに、LEDチップの電極とワイヤーとの接続部及びパッケージ基板の電極とワイヤーとの接続部の断線を防止することができる。   As described above, an LED chip is mounted on the electrode of the package substrate, the electrode of the LED chip and the electrode of the package substrate are electrically connected by a wire, a reflector is disposed around the LED chip, An LED module in which an LED chip, an inner peripheral surface of the reflector, an electrode of the package substrate, and the wire are sealed with a sealing resin, a boundary between the sealing resin and the reflector, and the sealing resin The LED module is characterized in that the same kind of inorganic insulating film is integrally formed at the boundary between the LED chip and the boundary between the sealing resin and the electrode of the package substrate. In addition to preventing corrosion of the electrode of the package substrate and the connection between the electrode of the LED chip and the wire and the electric power of the package substrate. And it is possible to prevent disconnection of the connection portion of the wire.

また、パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置されたモジュールの前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に同種の無機絶縁膜を一体的に成膜する成膜工程と、前記無機絶縁膜が成膜された前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に封止樹脂を充填して、前記LEDチップ、前記ワイヤー、前記リフレクターの内周面を前記封止樹脂で封止する封止工程を備えたことを特徴とするLEDモジュールの製造方法により、LEDチップの電極及びパッケージ基板の電極の腐食を防止するとともに、LEDチップの電極とワイヤーとの接続部及びパッケージ基板の電極とワイヤーとの接続部の断線を防止することができるLEDモジュールを製造することができる。   The LED of the module in which an LED chip is mounted on the electrode of the package substrate, the electrode of the LED chip and the electrode of the package substrate are electrically connected by a wire, and a reflector is disposed around the LED chip A film forming step of integrally forming an inorganic insulating film of the same type on a chip, an inner peripheral surface of the reflector, and an electrode of the package substrate; an LED chip on which the inorganic insulating film is formed; an inner surface of the reflector A sealing process is provided in which a sealing resin is filled in the peripheral surface and the electrode of the package substrate, and the inner peripheral surface of the LED chip, the wire, and the reflector is sealed with the sealing resin. The LED module manufacturing method prevents the corrosion of the electrode of the LED chip and the electrode of the package substrate, and the electrode of the LED chip It is possible to manufacture an LED module capable of preventing the disconnection of the connection portion between the electrode and the wire connecting portion and the package substrate and wires.

本発明のLEDモジュールの断面を示す図。The figure which shows the cross section of the LED module of this invention. 従来のLEDモジュールの断面を示す図。The figure which shows the cross section of the conventional LED module.

(LEDモジュール)
図1を用いて、本発明の実施例1について説明する。図1は、LEDモジュールの断面を示す図である。パッケージ基板1の電極5上にLEDチップ2が搭載され、そのLEDチップ2の電極とパッケージ基板1の電極5とがワイヤー6で電気的に接続されている。また、LEDチップ2の周囲には、セラミック等からなるリフレクター4が配置されてLEDチップ2が発光した光の一部が反射して大気に向かうことにより、より多くの光がLEDモジュールから放出されるようにされている。
(LED module)
A first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a view showing a cross section of the LED module. The LED chip 2 is mounted on the electrode 5 of the package substrate 1, and the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 are electrically connected by a wire 6. In addition, a reflector 4 made of ceramic or the like is disposed around the LED chip 2 so that a part of the light emitted from the LED chip 2 is reflected and travels to the atmosphere, so that more light is emitted from the LED module. It is supposed to be.

そして、リフレクター4の内周面、LEDチップ2の表面、及びパッケージ基板1の電極5が同種の無機絶縁膜7で一体的に覆われている。また、ワイヤー6の一部又は全部にも無機絶縁膜7が形成されている。無機絶縁膜7は、バッファ層とも呼ばれ、SiCNを用いて成膜されている。SiCNからなる無機絶縁膜7を成膜することにより、シリコーン樹脂からなる封止樹脂3との密着性が向上する。 The inner peripheral surface of the reflector 4, the surface of the LED chip 2, and the electrode 5 of the package substrate 1 are integrally covered with the same type of inorganic insulating film 7. An inorganic insulating film 7 is also formed on part or all of the wire 6. The inorganic insulating film 7 is also called a buffer layer, and is formed using SiCN. By forming the inorganic insulating film 7 made of SiCN, the adhesion with the sealing resin 3 made of silicone resin is improved.

なお、無機絶縁膜7のSiCNには、製造工程で混入する可能性のある少ない原子%割合のOが含まれてもよい。具体的には、Oが含まれる割合は、10%以下である。   Note that the SiCN of the inorganic insulating film 7 may contain a small atomic% ratio of O that may be mixed in the manufacturing process. Specifically, the proportion of O is 10% or less.

但し、無機絶縁膜7としてSiO2を成膜する場合のように多くのOを含む場合は、パッケージ基板の電極5やLEDチップ2の電極を酸化させるおそれがある。   However, when a large amount of O is contained as in the case where SiO2 is formed as the inorganic insulating film 7, the electrode 5 of the package substrate and the electrode of the LED chip 2 may be oxidized.

ここで、一体的に覆われているとは、切れ目なく全体的に覆われていることであり、これにより、大気や水分が切れ目等から侵入することを防ぐことができる。   Here, being integrally covered means that it is entirely covered without a break, and thus, it is possible to prevent air and moisture from entering from a break or the like.

無機絶縁膜7の厚さは、1μm程度であってよいが、これ以上の厚さであってもこれ以下の厚さであってもよい。 The thickness of the inorganic insulating film 7 may be about 1 μm, but may be greater than this or less than this.

無機絶縁膜7は、無機物からなるバッファ層である。なお、無機物とは、有機物を除く物質であり、具体的には炭素骨格を持たない物質である。つまり無機物には、合成/天然樹脂及び炭素骨格(炭化水素骨格を含む)を有するその他化合物は含まれない。 The inorganic insulating film 7 is a buffer layer made of an inorganic material. Note that an inorganic substance is a substance excluding an organic substance, and specifically, a substance having no carbon skeleton. That is, the inorganic substance does not include synthetic / natural resins and other compounds having a carbon skeleton (including a hydrocarbon skeleton).

そして、この無機絶縁膜7が成膜された凹部空間には、シリコーン樹脂からなる封止樹脂3が充填されて、LEDチップ2、パッケージ基板1の電極5、ワイヤー6、及びリフレクター4の内周面が大気から封止されている。   The recess space where the inorganic insulating film 7 is formed is filled with a sealing resin 3 made of silicone resin, and the inner periphery of the LED chip 2, the electrode 5 of the package substrate 1, the wire 6, and the reflector 4. The surface is sealed from the atmosphere.

すなわち、封止樹脂3とリフレクター4との境界、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に、同種の無機絶縁膜7が一体的に成膜されている。   That is, the same kind of inorganic insulating film 7 is integrally formed at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1. The film is formed.

封止樹脂3とリフレクター4との境界に無機絶縁膜7を成膜したことにより、封止樹脂3とリフレクター4との密着性がよくなり、封止樹脂3とリフレクター4との間に隙間が生じることを防止して大気や水分が浸入することが防げることにより、LEDチップ2の電極及びパッケージ基板1の電極5が腐食することを防止できる。   By forming the inorganic insulating film 7 at the boundary between the sealing resin 3 and the reflector 4, the adhesion between the sealing resin 3 and the reflector 4 is improved, and there is a gap between the sealing resin 3 and the reflector 4. By preventing the generation of air and moisture, the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 can be prevented from corroding.

また、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に無機絶縁膜7が成膜されたことにより、LEDチップ2の電極とワイヤー6の接合部分、及びパッケージ基板1の電極5とワイヤー6との接合部分とが無機絶縁膜7で押さえられた構成となり、LEDチップ2の電極とワイヤー6との接続部及びパッケージ基板1の電極5とワイヤー6との接続部の断線を防止することができる。   Further, the inorganic insulating film 7 is formed at the boundary between the sealing resin 3 and the LED chip 2 and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1, so that the electrode of the LED chip 2 and the wire 6 are formed. And the connection portion between the electrode 5 of the package substrate 1 and the wire 6 are held by the inorganic insulating film 7, and the connection portion between the electrode of the LED chip 2 and the wire 6 and the electrode 5 of the package substrate 1. And disconnection of the connecting portion between the wire 6 and the wire 6 can be prevented.

また、封止樹脂3とリフレクター4との境界、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に、同種の無機絶縁膜7が一体的に成膜されていることにより、膜に切れ目が存在しないから隙間が生じることなく、大気や水分の浸入を防止でき、LEDチップ2の電極又はパッケージ基板1の電極5が腐食することを防止できる。   Further, the same kind of inorganic insulating film 7 is integrated at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1. Since the film is formed in a film, there is no gap in the film, so that no gap is generated, and the intrusion of air and moisture can be prevented, and the electrode of the LED chip 2 or the electrode 5 of the package substrate 1 is prevented from corroding. it can.

(製造方法)
次に、本発明の実施例1におけるLEDモジュールの製造方法について説明する。図1のようにリフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップ2の電極とパッケージ基板1の電極5とがワイヤー6で電気的に接続されたモジュールに対して、プラズマCVD装置によりこのモジュールの内周面の凹部空間に無機絶縁膜7を成膜する成膜工程を実施する。
(Production method)
Next, the manufacturing method of the LED module in Example 1 of this invention is demonstrated. As shown in FIG. 1, the LED chip 2 is mounted on the electrode 5 of the package substrate 1 having the reflector 4, and the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 are electrically connected by the wire 6. On the other hand, the film-forming process which forms the inorganic insulating film 7 in the recessed space of the internal peripheral surface of this module with a plasma CVD apparatus is implemented.

すなわち、リフレクター4の内周面、LEDチップ2の表面、及びパッケージ基板1の電極5を同種の無機絶縁膜7で一体的に成膜する。また、ワイヤー6の一部又は全部にも無機絶縁膜7が形成されてもよい。無機絶縁膜7は、SiCNを用いて成膜する。無機絶縁膜7の厚さは、1μm程度であってよいが、これ以上の厚さであってもこれ以下の厚さであってもよい。 That is, the inner peripheral surface of the reflector 4, the surface of the LED chip 2, and the electrode 5 of the package substrate 1 are integrally formed with the same kind of inorganic insulating film 7. Further, the inorganic insulating film 7 may be formed on part or all of the wire 6. The inorganic insulating film 7 is formed using SiCN. The thickness of the inorganic insulating film 7 may be about 1 μm, but may be greater than this or less than this.

実施例1ではSiCNからなる無機絶縁膜7を成膜するために、プラズマCVD装置を用いたが、必ずしもこれに限定されるものではなく、スパッタ装置や蒸着装置等を用いて成膜することができる。   In Example 1, a plasma CVD apparatus was used to form the inorganic insulating film 7 made of SiCN. However, the present invention is not necessarily limited to this, and the film can be formed using a sputtering apparatus, a vapor deposition apparatus, or the like. it can.

最後に、無機絶縁膜7が成膜されたモジュールの凹部空間内に、シリコーン樹脂からなる封止樹脂3を充填する封止工程を実施して、LEDチップ2、パッケージ基板1の電極5、ワイヤー6、及びリフレクター4の内周面を大気から封止してLEDモジュールを完成する。   Finally, a sealing process of filling the sealing resin 3 made of silicone resin into the recessed space of the module on which the inorganic insulating film 7 is formed is performed, so that the LED chip 2, the electrode 5 of the package substrate 1, the wire 6 and the inner peripheral surface of the reflector 4 are sealed from the atmosphere to complete the LED module.

この製造方法により、封止樹脂3とリフレクター4との間に隙間が生じることを防止して大気や水分が浸入することが防げることにより、LEDチップ2の電極及びパッケージ基板1の電極5の腐食を防止するとともに、LEDチップ2の電極とワイヤー6との接合部分及びパッケージ基板1の電極5とワイヤー6との接合部分とが無機絶縁膜7で押さえられた構成となり、LEDチップ2の電極とワイヤー6との接続部、及びパッケージ基板1の電極5とワイヤー6との接続部の断線を防止することができるLEDモジュールを製造することができる。   By this manufacturing method, it is possible to prevent the gap between the sealing resin 3 and the reflector 4 and prevent air and moisture from entering, thereby corroding the electrode of the LED chip 2 and the electrode 5 of the package substrate 1. In addition, the bonding portion between the electrode of the LED chip 2 and the wire 6 and the bonding portion between the electrode 5 of the package substrate 1 and the wire 6 are pressed by the inorganic insulating film 7. An LED module that can prevent disconnection of the connection portion between the wire 6 and the connection portion between the electrode 5 of the package substrate 1 and the wire 6 can be manufactured.

また、封止樹脂3とリフレクター4との境界、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に、同種の無機絶縁膜7を一体的に成膜することにより、膜と膜との境界が存在しないから隙間が生じることなく、大気や水分の浸入を防止でき、LEDチップ2の電極又はパッケージ基板1の電極5が腐食することを完全に防止できる。 Further, the same kind of inorganic insulating film 7 is integrally formed at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1. By forming the film, the boundary between the films does not exist, so that no gaps are generated, the intrusion of air and moisture can be prevented, and the electrode of the LED chip 2 or the electrode 5 of the package substrate 1 is corroded. Can be completely prevented.

(LEDモジュール)
本発明の実施例2におけるLEDモジュールは、無機絶縁膜7が積層構造となっている点で実施例1と異なっている。すなわち、図1に示すようにリフレクター4の内周面、LEDチップ2の表面、及びパッケージ基板1の電極5が同種の無機絶縁膜7で一体的に覆われている。そして、無機絶縁膜7は無機物からなるバッファ層と、さらにその表面に無機物からなるバリア層とからなる積層構造とされている。つまり、同種の無機物からなるバッファ層と同種の無機物からなるバリア層の2層により、無機絶縁膜7が構成されている。
(LED module)
The LED module in Example 2 of the present invention is different from Example 1 in that the inorganic insulating film 7 has a laminated structure. That is, as shown in FIG. 1, the inner peripheral surface of the reflector 4, the surface of the LED chip 2, and the electrode 5 of the package substrate 1 are integrally covered with the same type of inorganic insulating film 7. The inorganic insulating film 7 has a laminated structure including a buffer layer made of an inorganic material and a barrier layer made of an inorganic material on the surface thereof. That is, the inorganic insulating film 7 is composed of two layers, a buffer layer made of the same kind of inorganic material and a barrier layer made of the same kind of inorganic substance.

ここで、バリア層とは、上記のバッファ層よりも密度が高い層であり、その結果、密着性は、バッファ層より低いが、バリア性がバッファ層より向上する。無機物からなるバリア層は、具体的には、SiO2を用いて成膜しているが、必ずしもこれに限定されるものではなく、Al2O3を用いて成膜してもよい。   Here, the barrier layer is a layer having a higher density than the buffer layer. As a result, the adhesion is lower than that of the buffer layer, but the barrier property is improved as compared with the buffer layer. The barrier layer made of an inorganic material is specifically formed using SiO2, but is not necessarily limited thereto, and may be formed using Al2O3.

なお、バリア層には、密着性、大気や水分の浸入防止性に加えて、光を取り出すために高い透明性が必要となるので透明性が高い酸化膜(SiO2、AL2O3)が好ましく、シリコーン樹脂からなる封止樹脂3との密着性も考慮するとSiO2が最も好ましい。ただ、薄い膜で構成することで透光性への影響を少なくする場合は、窒化膜(SiN、SiON)であってもよい。   The barrier layer needs to have high transparency in order to extract light in addition to adhesion and prevention of intrusion of air and moisture. Therefore, a highly transparent oxide film (SiO2, AL2O3) is preferable, and a silicone resin is used. Considering the adhesion with the sealing resin 3 made of SiO2, SiO2 is most preferable. However, a nitride film (SiN, SiON) may be used in the case where the thin film is used to reduce the influence on translucency.

バッファ層とは、上記バリア層よりもバリア性は低い代わりに密着性が上記バリア層よりも高い膜であり、封止樹脂3より線膨張係数の小さい材質からなる無機物である。具体的にバッファ層は、H、C、N及びSiを含むシリコン系膜であってよい。より具体的には、SiCN膜でよいが、これに必ずしも限定するものではなく、SiN膜、SiON膜であってもよい。   The buffer layer is an inorganic substance made of a material having a lower linear expansion coefficient than that of the sealing resin 3, although it has a lower barrier property than the barrier layer and has a higher adhesion than the barrier layer. Specifically, the buffer layer may be a silicon-based film containing H, C, N, and Si. More specifically, a SiCN film may be used, but the present invention is not necessarily limited thereto, and a SiN film or a SiON film may be used.

なお、実施例2においては、無機物からなるバッファ層と無機物からなるバリア層とを1層ずつ成膜して2層の無機絶縁膜7としたが、これに限定されるものではなく、無機物からなるバッファ層と無機物からなるバリア層とを交互にそれぞれ複数積層成膜して一体的に覆われる無機絶縁膜7としてもよい。これにより、密着性とバリア性をさらに高めることができる。   In Example 2, the buffer layer made of an inorganic material and the barrier layer made of an inorganic material were formed one by one to form a two-layer inorganic insulating film 7, but the present invention is not limited to this. Alternatively, a plurality of buffer layers and barrier layers made of an inorganic material may be alternately stacked to form an inorganic insulating film 7 that is integrally covered. Thereby, adhesiveness and barrier property can further be improved.

また、一体的に覆われているとは、切れ目なく全体的に覆われていることであり、これにより、大気や水分が切れ目等から侵入することを防ぐことができる。   Moreover, being covered integrally is covering the whole without a cut | interruption, and it can prevent that air | atmosphere and a water | moisture content penetrate | invade from a cut | interruption etc. by this.

そして、積層構造である無機絶縁膜7の表面の凹部空間にシリコーン樹脂からなる封止樹脂3が充填されてLEDチップ等が大気から封止されている。   The recessed space on the surface of the inorganic insulating film 7 having a laminated structure is filled with the sealing resin 3 made of silicone resin, and the LED chip and the like are sealed from the atmosphere.

封止樹脂3とリフレクター4との境界に、バッファ層に加えて無機物からなるバリア層を積層して無機絶縁膜7とすることにより、封止樹脂3とリフレクター4との密着性が向上して封止樹脂3とリフレクター4との間に隙間が生じることが防止できるとともに、大気や水分の浸入をさらに防げることにより、LEDチップ2の電極及びパッケージ基板1の電極5の腐食を防止することができる。   By laminating a barrier layer made of an inorganic material in addition to the buffer layer at the boundary between the sealing resin 3 and the reflector 4 to form the inorganic insulating film 7, the adhesion between the sealing resin 3 and the reflector 4 is improved. It is possible to prevent a gap from being formed between the sealing resin 3 and the reflector 4 and to further prevent corrosion of the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 by further preventing air and moisture from entering. it can.

また、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に積層構造の無機絶縁膜7が成膜されたことにより、LEDチップ2の電極とワイヤー6の接合部分、及びパッケージ基板1の電極5とワイヤー6との接合部分とが無機絶縁膜7で押さえられた構成となり、LEDチップ2の電極及びパッケージ基板1の電極5とワイヤー6との接続部の断線をさらに防止することができる。 Further, the inorganic insulating film 7 having a laminated structure is formed on the boundary between the sealing resin 3 and the LED chip 2 and on the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1, whereby the electrode of the LED chip 2 is formed. And the bonding portion of the wire 6 and the bonding portion of the electrode 5 of the package substrate 1 and the wire 6 are held by the inorganic insulating film 7, and the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 and the wire 6 Disconnection of the connecting portion can be further prevented.

また、封止樹脂3とリフレクター4との境界、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に、同種の無機絶縁膜7が一体的に成膜されていることにより、膜に切れ目が存在しないから隙間が生じることなく、大気や水分の浸入を防止でき、LEDチップ2の電極又はパッケージ基板1の電極5が腐食することを防止できる。 Further, the same kind of inorganic insulating film 7 is integrated at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1. Since the film is formed in a film, there is no gap in the film, so that no gap is generated, and the intrusion of air and moisture can be prevented, and the electrode of the LED chip 2 or the electrode 5 of the package substrate 1 is prevented from corroding. it can.

(製造方法)
次に、本発明の実施例2におけるLEDモジュールの製造方法について説明する。図1のようにリフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップ2の電極とパッケージ基板1の電極5とがワイヤー6で電気的に接続されたモジュールに対して、プラズマCVD装置によりこのモジュールの内周面の凹部空間に同種の無機物からなるバッファ層を成膜するバッファ層成膜工程を実施する。無機物からなるバッファ層は、具体的には、SiCNで成膜することができる。
(Production method)
Next, the manufacturing method of the LED module in Example 2 of this invention is demonstrated. As shown in FIG. 1, the LED chip 2 is mounted on the electrode 5 of the package substrate 1 having the reflector 4, and the electrode of the LED chip 2 and the electrode 5 of the package substrate 1 are electrically connected by the wire 6. On the other hand, a buffer layer film forming step is performed in which a buffer layer made of the same kind of inorganic material is formed in the concave space on the inner peripheral surface of the module by a plasma CVD apparatus. Specifically, the buffer layer made of an inorganic material can be formed of SiCN.

さらに、プラズマCVD装置により、同種の無機物からなるバッファ層の表面に、同種の無機物からなるバリア層を成膜するバリア層成膜工程を実施して、複層の無機絶縁膜7を形成する。無機物からなるバリア層は、具体的には、SiO2を用いて成膜することができるが、必ずしもこれに限定するものではなく、Al2O3を用いて成膜してもよい。   Further, a multi-layered inorganic insulating film 7 is formed by performing a barrier layer forming step of forming a barrier layer made of the same kind of inorganic material on the surface of the buffer layer made of the same kind of inorganic substance by a plasma CVD apparatus. The barrier layer made of an inorganic material can be specifically formed using SiO 2, but is not necessarily limited thereto, and may be formed using Al 2 O 3.

なお上記したように、バリア層には、密着性、水分の浸入防止性に加えて、光を取り出すために高い透明性が必要となるので透明性が高い酸化膜(SiO2、AL2O3)が好ましく、シリコーン樹脂からなる封止樹脂3との密着性も考慮するとSiO2が最も好ましい。ただ、薄い膜で構成することで透光性への影響を少なくする場合は、窒化膜(SiN、SiON)であってもよい。   As described above, the barrier layer is preferably an oxide film (SiO2, AL2O3) having high transparency because it requires high transparency in order to extract light in addition to adhesion and moisture penetration prevention, Considering the adhesion to the sealing resin 3 made of silicone resin, SiO2 is most preferable. However, a nitride film (SiN, SiON) may be used in the case where the thin film is used to reduce the influence on translucency.

実施例2においては、バッファ層成膜工程とバリア層成膜工程とを実施することで、成膜工程が完了する。   In Example 2, the film formation process is completed by performing the buffer layer film formation process and the barrier layer film formation process.

また、SiCNからなるバッファ層やSiO2からなるバリア層を成膜するために、プラズマCVDを用いたが、必ずしもこれに限定されるものではなく、スパッタ装置や蒸着装置等を用いて成膜することができる。   In addition, although plasma CVD is used to form a buffer layer made of SiCN or a barrier layer made of SiO 2, the present invention is not necessarily limited to this, and the film is formed using a sputtering apparatus, a vapor deposition apparatus, or the like. Can do.

最後に、バッファ層及びバリア層からなる無機絶縁膜7が成膜されたモジュールの空間内に、シリコーン樹脂からなる封止樹脂3充填して、LEDチップ2、パッケージ基板1の電極5、ワイヤー6、及びリフレクター4の内周面を大気から封止する封止工程を実施してLEDモジュールを完成させる。   Finally, the sealing resin 3 made of silicone resin is filled in the space of the module in which the inorganic insulating film 7 made of the buffer layer and the barrier layer is formed, and the LED chip 2, the electrode 5 of the package substrate 1, the wire 6. And the sealing process which seals the internal peripheral surface of the reflector 4 from air | atmosphere is implemented, and an LED module is completed.

この製造方法により、封止樹脂3とリフレクター4との密着性が向上して、隙間が生じることが防止されて大気や水分が浸入することがさらに防げることにより、LEDチップ2の電極及びパッケージ基板1の電極5の腐食を防止することができるとともに、LEDチップ2の電極とワイヤー6との接合部分及びパッケージ基板1の電極5とワイヤー6との接合部分とが無機絶縁膜7で押さえられた構成とすることができ、LEDチップ2の電極とワイヤー6との接続部、及びパッケージ基板1の電極5とワイヤー6との接続部の断線を防止することができるLEDモジュールを製造することができる。   By this manufacturing method, the adhesiveness between the sealing resin 3 and the reflector 4 is improved, the gap is prevented from being generated, and the air and moisture can be further prevented from entering, whereby the electrode of the LED chip 2 and the package substrate 1 can prevent corrosion of the electrode 5 and the bonded portion between the electrode of the LED chip 2 and the wire 6 and the bonded portion between the electrode 5 of the package substrate 1 and the wire 6 are pressed by the inorganic insulating film 7. The LED module which can be comprised and can prevent the disconnection of the connection part of the electrode of the LED chip 2 and the wire 6 and the connection part of the electrode 5 of the package substrate 1 and the wire 6 can be manufactured. .

また、封止樹脂3とリフレクター4との境界、封止樹脂3とLEDチップ2との境界、及び封止樹脂3とパッケージ基板1の電極5との境界に、同種の無機物からなるバッファ層及び同種の無機物からなる酸化膜からなる複層の無機絶縁膜7を一体的に成膜することにより、膜に切れ目が存在しないから隙間が生じることなく、大気や水分の浸入を防止でき、LEDチップ2の電極及びパッケージ基板1の電極5が腐食することがさらに防止できる。 In addition, a buffer layer made of the same kind of inorganic substance is formed at the boundary between the sealing resin 3 and the reflector 4, the boundary between the sealing resin 3 and the LED chip 2, and the boundary between the sealing resin 3 and the electrode 5 of the package substrate 1. By integrally forming a multi-layered inorganic insulating film 7 made of an oxide film made of the same kind of inorganic substance, there is no gap in the film, so that no gaps are formed, and intrusion of air and moisture can be prevented. The corrosion of the second electrode and the electrode 5 of the package substrate 1 can be further prevented.

本発明は、LEDモジュールおよびLEDモジュールの製造方法に広く適用することができる。 The present invention can be widely applied to LED modules and LED module manufacturing methods.

1 パッケージ基板
2 LEDチップ
3 封止樹脂
4 リフレクター
5 電極
6 ワイヤー
7 無機絶縁膜


1 Package substrate 2 LED chip 3 Sealing resin 4 Reflector 5 Electrode 6 Wire 7 Inorganic insulating film


Claims (6)

パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置され、前記LEDチップ、前記リフレクターの内周面、前記パッケージ基板の電極、及び前記ワイヤーが封止樹脂で充填されたLEDモジュールであって、前記封止樹脂と前記リフレクターとの境界、前記封止樹脂と前記LEDチップとの境界、及び前記封止樹脂と前記パッケージ基板の電極との境界に、同種の無機絶縁膜が一体的に成膜されていることを特徴とするLEDモジュール。   An LED chip is mounted on an electrode of the package substrate, an electrode of the LED chip and an electrode of the package substrate are electrically connected by a wire, a reflector is disposed around the LED chip, and the LED chip and the reflector An LED module in which the electrode of the package substrate and the wire are filled with a sealing resin, the boundary between the sealing resin and the reflector, the boundary between the sealing resin and the LED chip And the same kind of inorganic insulating film is integrally formed at the boundary between the sealing resin and the electrode of the package substrate. 前記無機絶縁膜は、Si系の膜であることを特徴とする請求項1に記載のLEDモジュール。   The LED module according to claim 1, wherein the inorganic insulating film is a Si-based film. 前記Si系の膜は、SiCN膜からなることを特徴とする請求項2に記載のLEDモジュール。   The LED module according to claim 2, wherein the Si-based film is a SiCN film. 前記無機絶縁膜は、バッファ層とバリア層とが積層された構成とすることを特徴とする請求項1に記載のLEDモジュール。   The LED module according to claim 1, wherein the inorganic insulating film has a configuration in which a buffer layer and a barrier layer are stacked. 前記バリア層はSiO2膜又はAL2O3膜からなることを特徴とする請求項4に記載のLEDモジュール。   The LED module according to claim 4, wherein the barrier layer is made of a SiO 2 film or an AL 2 O 3 film. パッケージ基板の電極上にLEDチップが搭載され、前記LEDチップの電極と前記パッケージ基板の電極間がワイヤーで電気的に接続され、前記LEDチップの周囲にリフレクターが配置されたモジュールの前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に同種の無機絶縁膜を一体的に成膜する成膜工程と、前記無機絶縁膜が成膜された前記LEDチップ、前記リフレクターの内周面、及び前記パッケージ基板の電極に封止樹脂を充填して、前記LEDチップ、前記ワイヤー、及び前記リフレクターの内周面を前記封止樹脂で封止する封止工程を備えたことを特徴とするLEDモジュールの製造方法。









An LED chip mounted on an electrode of the package substrate, the LED chip electrode and the electrode of the package substrate are electrically connected by a wire, and the LED chip of the module in which a reflector is disposed around the LED chip; A film forming step of integrally forming the same type of inorganic insulating film on the inner peripheral surface of the reflector and the electrode of the package substrate, the LED chip on which the inorganic insulating film is formed, and the inner peripheral surface of the reflector And a sealing step of filling the electrode of the package substrate with a sealing resin and sealing the inner peripheral surfaces of the LED chip, the wire, and the reflector with the sealing resin. Manufacturing method of LED module.









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JP2012064713A (en) * 2010-09-15 2012-03-29 Toshiba Corp Manufacturing method for semiconductor device
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JPS6285481A (en) * 1985-10-09 1987-04-18 Nippon Telegr & Teleph Corp <Ntt> Resin-sealed light emitting diode and manufacture thereof
JP2003234348A (en) * 2002-02-08 2003-08-22 Hitachi Ltd Semiconductor integrated circuit device and method of manufacturing the same
US20040169181A1 (en) * 2002-06-26 2004-09-02 Yoo Myung Cheol Thin film light emitting diode
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