JP2016184620A - Multilayer wiring structural body - Google Patents

Multilayer wiring structural body Download PDF

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Publication number
JP2016184620A
JP2016184620A JP2015063319A JP2015063319A JP2016184620A JP 2016184620 A JP2016184620 A JP 2016184620A JP 2015063319 A JP2015063319 A JP 2015063319A JP 2015063319 A JP2015063319 A JP 2015063319A JP 2016184620 A JP2016184620 A JP 2016184620A
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Japan
Prior art keywords
insulating layer
bump
layer
multilayer wiring
embodiment
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JP2015063319A
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Japanese (ja)
Inventor
貴正 高野
Takamasa Takano
貴正 高野
工藤 寛
Hiroshi Kudo
寛 工藤
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大日本印刷株式会社
Dainippon Printing Co Ltd
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Priority to JP2015063319A priority Critical patent/JP2016184620A/en
Publication of JP2016184620A publication Critical patent/JP2016184620A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer wiring structural body capable of suppressing lateral shift and falling of a bump composed of a material containing a resin.SOLUTION: A multilayer wiring structural body according to an embodiment may comprise: a multilayer wiring structure laminated with a plurality of wiring layers; a bump arranged above the multilayer wiring structure, including a resin, and electrically connected to one of the plurality of wiring layers; and a structural body fixed to the multilayer wiring structure and supporting the bump from a lateral side.SELECTED DRAWING: Figure 3a

Description

  The present invention relates to a multilayer wiring structure. In particular, the present invention is disposed above the multilayer wiring structure, includes a resin, and is electrically connected to any one of the plurality of wiring layers, and fixed to the multilayer wiring structure, The present invention relates to a multilayer wiring structure including a structure that supports a bump from a side surface.

  In recent years, with the increase in the number of pins associated with higher performance of semiconductor elements, the importance of multilayer wiring boards in which wiring layers are multilayered is increasing as a wiring board for mounting semiconductor elements. Also, in a semiconductor test substrate for testing a semiconductor element, multilayering of wiring layers is indispensable. On the uppermost layer of the semiconductor test substrate, bumps connected to the electrode pads of the semiconductor element to be inspected are arranged. As a material for the bump, metals such as gold, silver, copper, nickel, solder (solder) are mainly used.

  By the way, a large number of semiconductor elements are inspected using a semiconductor test substrate. Therefore, it is necessary to repeat the operation of connecting or disconnecting the semiconductor element to be inspected. Therefore, the bump connected to the electrode pad of the semiconductor element is required to have elasticity. However, a bump made of a metal material has no elasticity. Therefore, it is conceivable that a material including a resin that is more elastic than metal is used as a material for forming the bump.

  Here, as a bump arrangement made of a metal material arranged in the uppermost layer of the multilayer wiring structure, a technique of arranging only the upper part of the wiring pad is disclosed (Patent Document 1).

JP 2006-173333 A

  When the technique disclosed in Patent Document 1 is applied to a bump made of a material containing a resin, the resin contains a resin because the resin has lower adhesion and lower rigidity than the metal than the metal. There arises a problem that the bumps made of are displaced laterally or fall down.

  The present invention is intended to solve the problems associated with the prior art as described above, and the object of the present invention is to prevent the bumps made of a resin-containing material from shifting laterally or falling down. By the way.

  According to an embodiment of the present invention, a multilayer wiring structure in which a plurality of wiring layers are stacked, and a resin disposed above the multilayer wiring structure, including resin, and electrically connected to any one of the plurality of wiring layers. There is provided a multilayer wiring structure comprising: a bump connected in general; and a structure fixed to the multilayer wiring structure and supporting the bump from a side surface.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down.

  The structure may include a thin film provided with an opening, and the bump may be supported by a side wall of the thin film in the opening.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down.

  The thin film may be an inorganic insulating layer.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. In addition, the film formed of the inorganic insulating layer has high rigidity, can support the bumps more firmly, and can further prevent the bumps from being laterally shifted or toppled.

  The thin film may be an organic insulating layer.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. In addition, since the film formed of the organic insulating layer can be made thick, the side walls supporting the bumps can be made higher, and the bumps can be further prevented from being laterally shifted or toppled. it can.

  The thin film may include a laminate of an inorganic insulating layer and an organic insulating layer.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. Further, the film formed of the inorganic insulating layer has high rigidity and can support the bumps more firmly. Since the film formed of the organic insulating layer can be made thick, the side walls supporting the bumps can be made higher, and the bumps can be further prevented from shifting or falling down.

  The structure includes a first thin film provided with a first opening, and a second thin film provided with a second opening larger than the first opening in plan view, and the bump includes the bump It may be supported by the first side wall of the first thin film in the first opening and the second side wall of the second thin film in the second opening.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. Further, the anchor effect can be increased by dividing the side wall into two stages.

  The first thin film and the second thin film may be organic insulating layers.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. In addition, since the film formed of the organic insulating layer can be made thick, the side walls supporting the bumps can be made higher, and the bumps can be further prevented from being laterally shifted or toppled. it can.

  The first thin film may include a laminate of an inorganic insulating layer and an organic insulating layer, and the second thin film may be an inorganic insulating layer.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. Further, the film formed of the inorganic insulating layer has high rigidity and can support the bumps more firmly. Since the film formed of the organic insulating layer can be made thick, the side walls supporting the bumps can be made higher, and the bumps can be further prevented from shifting or falling down.

  The wiring layer may include a first conductive layer, a barrier layer positioned above the first conductive layer, and a second conductive layer positioned above the barrier layer.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. The barrier layer also prevents the second conductive layer from diffusing into the first conductive layer.

  The second conductive layer may be made of a material containing gold.

  According to this embodiment, it can suppress that the bump which consists of material containing resin shifts | deviates sideways or falls down. In addition, by using a material containing gold as the second conductive layer, oxidation of the surface of the first conductive layer can be prevented, wettability with the bump can be improved, and adhesion with the bump can be improved. it can.

  The semiconductor device may further include a third insulating layer that is disposed above the multilayer wiring structure and supports the bump from a side surface.

  According to this embodiment, the durability of the bump can be improved.

  The upper surface of the third insulating layer may be higher than the upper surface of the bump.

  According to this embodiment, the durability of the bump can be further improved.

  According to the multilayer wiring structure according to the present invention, it is possible to prevent the bumps made of a resin-containing material from being laterally shifted or toppled.

It is a schematic diagram (plan view) of a multilayer wiring structure according to an embodiment. It is sectional drawing in the AA of FIG. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 178 vicinity of the multilayer wiring structure which concerns on one Embodiment. It is the schematic diagram (sectional drawing) which expanded the bump 188 vicinity at the time of replacing the bump consisting of the conventional metal material with the bump consisting of the material containing resin.

  Hereinafter, a multilayer wiring structure and a manufacturing method thereof according to the present invention will be described with reference to the drawings. However, the multilayer wiring structure and the manufacturing method thereof according to the present invention are not construed as being limited to the description of the embodiments described below. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted. In addition, the dimensional ratios of the drawings (the ratios between the components, the ratios in the vertical and horizontal height directions, etc.) may be different from the actual ratios for convenience of explanation, or some of the configurations may be omitted from the drawings.

<First Embodiment>
Hereinafter, a description will be given with reference to FIGS. FIG. 1 is a schematic view (plan view) of a multilayer wiring structure according to an embodiment, and FIG. 2 is a cross-sectional view taken along line AA in FIG. In FIG. 2, an example of a multilayer wiring structure will be described using a cross-sectional view of a seven-layer wiring structure.

  The first to sixth insulating layers (110, 120, 130, 140, 150, 160, 170) and the first to sixth insulating layers (110, 170, 170) are separated from each other on the substrate 100. 119, 129, 139, 149, 159, 169) and the first to sixth wiring layers connecting the adjacent wiring layers among the first to seventh wiring layers (110, 120, 130, 140, 150, 160, 170). A multilayer wiring structure having vias (191, 192, 193, 194, 195, 196) is formed. An insulating base layer 101 that isolates the substrate 100 and the first wiring layer 110 is formed between the substrate 100 and the first wiring layer 110 that is the lowermost wiring layer of the multilayer wiring structure. The layer 110 and the substrate 100 are electrically insulated. Details of the configuration of the multilayer wiring structure of FIG. 2 will be described later.

  FIG. 3a is an enlarged schematic view (cross-sectional view) of the vicinity of the bump 178 of the multilayer wiring structure of FIG. In FIG. 3a, the eleventh conductive layer 161 and the fifth via 195 which are a part of the sixth wiring layer 160 shown in FIG. 2 are omitted, and the structure of the fifth organic insulating layer 155 or more is shown. Such omission is the same in the following drawings. As shown in FIG. 3 a, a thirteenth inorganic insulating layer 176 and a fourteenth inorganic insulating layer 177 are disposed on the sixth insulating layer 169 and the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 are provided with openings, and the bumps 178 are disposed in contact with the seventh wiring layer 170 in the openings. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 is fixed to the multilayer wiring structure. The structure including the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has an opening, and the bump 178 is supported by the side wall in the opening.

  As a material for forming the bump 178, conductive resin such as polyacetylene, polyparaphenylene, polyaniline, polythiophene, polyparaphenylene vinylene, epoxy conductive adhesive, urethane conductive adhesive, silicone conductive adhesive, Various conductive materials containing gold (Au), silver (Ag), Pd (palladium), Cu (copper), Ag-coated Cu, etc. as fillers in polyimide-based conductive adhesives, rubber-based conductive adhesives, and polymers, respectively. But is not limited to these. The height of the bump 178 is preferably 10 μm or more and 50 μm or less. The height of the bump 178 is preferably 20 μm or more and 40 μm or less. Further, the upper surface (not shown) of the bump 178 has a circular shape, and the diameter is preferably 35 μm or more and 45 μm or less. In the present embodiment, the upper surface of the bump 178 is described as a circle, but is not limited to a circle, and may be a polygon such as a triangle or a rectangle. In the present embodiment, the cross-sectional shape of the bump 178 is such that the upper side of the bump 178 is longer than the side when the lower surface of the bump 178 connects the portion in contact with the fourteenth inorganic insulating layer 177. However, the cross-sectional shape of the bump 178 is not limited to this, and the shape when the lower surface of the bump 178 connects the portion in contact with the fourteenth inorganic insulating layer 177 is longer than the upper side of the bump 178. The shape may be a part of a circle.

  According to the present embodiment, the convex portion of the bump 178 on the lower surface of the bump 178 is supported by the side wall of the structure including the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177, and thus the anchor effect works. , The bump 178 can be prevented from being laterally displaced or falling down. The film formed by the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bumps 178 more firmly.

  In the embodiment of FIG. 3b, a seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side. In FIG. 3 b, the upper surface of the seventh organic insulating layer 179 is lower than the upper surface of the bump 178, but may be the same as the upper surface of the bump 178. In addition, as illustrated in FIG. 3 c, the upper surface of the seventh organic insulating layer 179 may be higher than the upper surface of the bump 178. As shown in FIGS. 3b and 3c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface, whereby the durability of the bump 178 can be improved. .

  In FIG. 3 c, the upper surface of the seventh organic insulating layer 179 is preferably higher than the upper surface of the bump 178 by 10 μm or more and 40 μm or less. More preferably, the upper surface of the seventh organic insulating layer 179 may be 25 μm higher than the upper surface of the bump 178. In FIG. 3c, the diameter of the seventh organic insulating layer 179 is equal to or larger than the diameter of the bump 178, but is not limited thereto.

  In FIGS. 3b and 3c, the organic insulating layer is disposed as the insulating layer disposed above the sixth organic insulating layer 165 and supporting the bumps 178 from the side surface, but may be an inorganic insulating layer.

<Comparative example>
Here, the structure which does not have the bump and structure which concerns on this invention is demonstrated using FIG. 18 as a comparative example. When the conventional technique is applied to a bump made of a resin-containing material, as shown in FIG. 18, unlike the present embodiment, the bump 188 has no structure to be supported from the side surface and the anchor effect does not work. 188 is shifted to the side or falls down.

<Variation 1 of the first embodiment>
FIG. 4 a is an enlarged schematic view (cross-sectional view) of the vicinity of the bump 178 of the multilayer wiring structure according to the first modification of the first embodiment of the present invention.

  As shown in FIG. 4 a, a thirteenth inorganic insulating layer 176 and a fourteenth inorganic insulating layer 177 are disposed on the sixth insulating layer 169 and the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 are provided with openings, and the bumps 178 are disposed in contact with the seventh wiring layer 170 in the openings. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 is fixed to the multilayer wiring structure. The structure including the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has an opening, and the bump 178 is supported by the side wall in the opening. The sixteenth conductive layer 174 is a metal different from the fifteenth conductive layer 172. As the sixteenth conductive layer 174, for example, gold (Au), platinum (Pt), or the like can be used.

  According to the present embodiment, as in the embodiment of FIG. 3a, the bump 178 includes the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177, and is supported by the side wall in the opening of the structure having the opening. As a result, the anchor effect works, and the bump 178 can be prevented from being laterally shifted or falling down. The film formed by the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bumps 178 more firmly. However, unlike the embodiment of FIG. 3 a, the 16th conductive layer 174 made of Au is disposed on the 15th conductive layer 172, thereby preventing the surface of the 15th conductive layer 172 from being oxidized and the bump 178. It is possible to improve the wettability with the bumps 178 and improve the adhesion to the bumps 178.

  In the embodiment shown in FIGS. 4B and 4C, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bumps 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 2 of the first embodiment>
As shown in FIG. 5 a, a thirteenth inorganic insulating layer 176 and a fourteenth inorganic insulating layer 177 are disposed on the sixth insulating layer 169 and the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 are provided with openings, and the bumps 178 are disposed in contact with the seventh wiring layer 170 in the openings. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The thirteenth inorganic insulating layer 176 is fixed to the multilayer wiring structure. The structure including the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has an opening, and the bump 178 is supported by the side wall in the opening. A barrier layer 173 is disposed between the fifteenth conductive layer 172 and the sixteenth conductive layer 174.

  According to the present embodiment, as in the embodiment of FIGS. 3a and 4a, the bump 178 includes the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177, and the side wall at the opening of the structure having the opening. As a result, the anchor effect is exerted, and the bump 178 can be prevented from being laterally displaced or toppled. The film formed by the thirteenth inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bumps 178 more firmly. However, unlike the embodiment of FIG. 4 a, the barrier layer 173 between the fifteenth conductive layer 172 and the sixteenth conductive layer 174 causes the material of the sixteenth conductive layer 174 to diffuse into the fifteenth conductive layer 172. Is prevented. For example, nickel (Ni) can be used for the barrier layer 173, but the barrier layer 173 is not limited to nickel as long as the material of the fifteenth conductive layer 172 can be prevented from diffusing into the sixteenth conductive layer 174.

  In the embodiment of FIGS. 5b and 5c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bumps 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

  The configuration of the multilayer wiring structure according to the present embodiment will be described in more detail. In FIG. 2, the first wiring layer 110 has a first conductive layer 111 and a second conductive layer 112. The second conductive layer 112 is preferably a metal material with low electrical resistance. For example, copper (Cu), silver (Ag), gold (Au), aluminum (Al), or the like can be used. Alternatively, an aluminum alloy such as an aluminum-neodymium alloy (Al—Nd) or an aluminum-copper alloy (Al—Cu) can be used. As the first conductive layer 111, it is preferable to use a material having adhesiveness and a barrier property to the second conductive layer 112. For example, when Cu is used as the second conductive layer 112, the first conductive layer 111 is made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), chromium (Cr), or the like. Can be used.

  In this embodiment, the laminated structure of two conductive layers is exemplified as the wiring layer. However, the present invention is not limited to this structure, and a single-layer structure of one conductive layer may be used, and three or more conductive layers may be used. A laminated structure of layers may be used.

  In FIG. 2, the first insulating layer 119 includes a first inorganic insulating layer 113, a second inorganic insulating layer 114, and a first organic insulating layer 115. The first inorganic insulating layer 113 is formed so as to cover the first conductive layer 111, the second conductive layer 112, and the exposed underlayer 101. The second inorganic insulating layer 114 is formed so as to cover the first inorganic insulating layer 113, and the first organic insulating layer 115 is further formed thereon. Here, the dielectric constant of the first organic insulating layer 115 is preferably lower than the dielectric constant of each of the first inorganic insulating layer 113 and the second inorganic insulating layer 114. Note that the first insulating layer 119 is not limited to the above three-layer structure, and may be configured to include at least one organic insulating layer or inorganic insulating layer. The first insulating layer 119 may be composed of the first organic insulating layer 115 without the first inorganic insulating layer 113 and the second inorganic insulating layer 114.

The first inorganic insulating layer 113 is preferably made of a material having a barrier property with respect to the second conductive layer 112. In other words, the first inorganic insulating layer 113 is preferably made of a material having a slower diffusion rate of the second conductive layer 112 than the second inorganic insulating layer 114 and the first organic insulating layer 115. For example, when Cu is used as the second conductive layer 112, the first inorganic insulating layer 113 includes silicon nitride (SiN), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon carbide (SiC). Silicon nitride carbide (SiCN), carbon-added silicon oxide (SiOC), or the like can be used. The first inorganic insulating layer 113 is preferably formed under film formation conditions with good coverage. Further, when Cu is used as the second conductive layer 112 and SiN is used as the first inorganic insulating layer 113, it is preferable that the film has a certain thickness or more in order to obtain a Cu diffusion preventing function. Since the ratio is as high as 7.5, it is preferable to set the film thickness to a certain value or less in order to suppress parasitic capacitance between wiring layers. Specifically, the thickness of the SiN film is preferably 10 nm or more and 200 nm or less. More preferably, it is 50 nm or more and 100 nm or less.

  The first inorganic insulating layer 113 preferably prevents the first inorganic insulating layer 113 from being cracked or a region having a rough film at the step formed by the first wiring layer 110. For example, the first inorganic insulating layer 113 is desirably formed under a condition where the deposition temperature is high, and is preferably 200 ° C. or higher. More preferably, it is good at 250 degreeC or more. Further, in order to improve the coverage of the first inorganic insulating layer 113, the end surface of the first wiring layer 110 may have a forward taper shape inclined with respect to the surface of the base layer 101. The taper angle of the first wiring layer 110 is preferably 30 degrees or more and 90 degrees or less. More preferably, it is 30 degrees or more and 60 degrees or less. Here, both the first conductive layer 111 and the second conductive layer 112 included in the first wiring layer 110 do not have to have a forward taper shape, and any one of them may be a forward taper shape.

The second inorganic insulating layer 114 is preferably made of a material having good adhesion to the first inorganic insulating layer 113 and the first organic insulating layer 115 formed thereon. For example, as the second inorganic insulating layer 114, silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or the like can be used. The second inorganic insulating layer 114 is preferably formed under film formation conditions with good coverage. Further, the SiO 2 film preferably has a film thickness of a certain level or more for adjusting the warpage of the substrate and improving the reliability. If the film thickness is too thick, the polyimide is used as the first organic insulating layer 115. Is less than a certain thickness because it cannot balance the stress with the polyimide. Specifically, the thickness of the SiO 2 film is preferably 1 μm or more and 8 μm or less. More preferably, it is 2 μm or more and 5 μm or less.

  The first organic insulating layer 115 is made of a material that relaxes or flattens the step formed by the first wiring layer 110 and has a dielectric constant lower than that of the first inorganic insulating layer 113 and the second inorganic insulating layer 114. Preferably, it is good to form with resin materials, such as photosensitive polyimide, for example. The film thickness of the first organic insulating layer 115 is preferably at least as thick as the step formed by the first wiring layer 110. The film thickness of the first organic insulating layer 115 is preferably within a certain range in order to match the impedance of the wiring. Specifically, the film thickness of the first organic insulating layer is preferably 4 μm or more and 24 μm or less. More preferably, it is 8 μm or more and 20 μm or less. Moreover, photosensitive acrylic, photosensitive siloxane, etc. can be used instead of photosensitive polyimide. In addition, benzocyclobutene having a low dielectric constant and a barrier property against Cu may be used. Moreover, you may use not only photosensitive resin but non-photosensitive resin.

  Non-photosensitive resins include epoxy resin, polyimide resin, benzocyclobutene resin, polyamide, phenol resin, silicone resin, fluororesin, liquid crystal polymer, polyamideimide, polybenzoxazole, cyanate resin, aramid, polyolefin, polyester, BT resin , FR-4, FR-5, polyacetal, polybutylene terephthalate, syndiotactic polystyrene, polyphenylene sulfide, polyether ether ketone, polyether nitrile, polycarbonate, polyphenylene ether polysulfone, polyether sulfone, polyarylate, polyetherimide, etc. Can be used. The above resins may be used alone or in combination of two or more kinds of resins. Further, an inorganic filler such as glass, talc, mica, silica, alumina or the like may be used in combination with the above resin.

  The first insulating layer 119 is provided with an opening 181, and the opening 181 is filled with the first via 191. In FIG. 2, the structure in which the first via 191 is formed by filling a part of the second wiring layer 120 into the opening 181 is illustrated, but the structure is not limited to this structure, for example, as the first via 191. A conductive layer different from the second wiring layer 120 may be used. 2 illustrates the structure in which the opening 181 and the first via 191 have a right-angled shape with respect to the substrate. However, the present invention is not limited to this structure, and the opening 181 and the first via 191 are formed with respect to the substrate. It may have a forward tapered shape, and the opening 181 and the first via 191 may have a reverse tapered shape with respect to the substrate. 2 illustrates a structure in which the opening 181 is filled with a conductive layer, the vias may be connected between adjacent wiring layers, and a part of the opening 181 may be a cavity.

  As shown in FIG. 2, when the second wiring layer 120 is used as the first via 191, the fourth conductive layer 122 has copper (Cu), silver (Ag), low electrical resistance like the second conductive layer 112, and the like. Gold (Au), aluminum (Al), or the like can be used. Alternatively, an aluminum alloy such as an aluminum-neodymium alloy (Al—Nd) or an aluminum-copper alloy (Al—Cu) can be used. Further, as the third conductive layer 121, it is preferable to use a material having a barrier property with respect to the fourth conductive layer 122 like the first conductive layer 111. For example, when the fourth conductive layer 122 contains Cu, titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), chromium (Cr), or the like is used as the third conductive layer 121. can do.

  The first via 191 is in contact with the second conductive layer 112 of the first wiring layer 110 at the bottom thereof, and the first wiring layer 110 and the second wiring layer 120 are electrically connected.

  A second insulating layer 129 is formed on the second wiring layer 120. The second insulating layer 129 has the same structure as the first insulating layer 119, and includes a third inorganic insulating layer 123, a fourth inorganic insulating layer 124, and a second organic insulating layer 125. In FIG. 2, since the material used for each layer of the second insulating layer 129 is the same as that of each layer of the first insulating layer 119, detailed description thereof is omitted here. Similar to the first insulating layer 119, the second insulating layer 129 may include the second organic insulating layer 125 without the third inorganic insulating layer 123 and the fourth inorganic insulating layer 124. However, the material used for each layer of the second insulating layer 129 is not limited to the same material as each layer of the first insulating layer 119, and can be appropriately selected depending on the purpose of the insulating layer.

  Thereafter, similarly to the second wiring layer 120, the third to seventh wiring layers (130, 140, 150, 160, 170) can be formed. The fifth conductive layer 131 of the third wiring layer 130, the seventh conductive layer 141 of the fourth wiring layer 140, the ninth conductive layer 151 of the fifth wiring layer 150, the eleventh conductive layer 161 and the seventh of the sixth wiring layer 160. The thirteenth conductive layer 171 of the wiring layer can be formed of the same material as the first conductive layer 111, respectively. The sixth conductive layer 132 of the third wiring layer 130, the eighth conductive layer 142 of the fourth wiring layer 140, the tenth conductive layer 152 of the fifth wiring layer 150, the twelfth conductive layer 162 of the sixth wiring layer, the first The fourteenth conductive layers 172 of the seven wiring layers 170 can be formed of the same material as the second conductive layer 112, respectively. However, these conductive layers are not necessarily the same as the first conductive layer 111 or the second conductive layer 112, and can be appropriately selected according to the purpose of the wiring layer.

  Similarly to the second insulating layer 129, third to sixth insulating layers (139, 149, 159, 169) can be formed. The fifth inorganic insulating layer 133 of the third insulating layer 139, the seventh inorganic insulating layer 143 of the fourth insulating layer 149, the ninth inorganic insulating layer 153 of the fifth insulating layer 159, and the eleventh inorganic insulating layer of the sixth insulating layer 169 163 can be formed using the same material as the first inorganic insulating layer 113. The sixth inorganic insulating layer 134 of the third insulating layer 139, the eighth inorganic insulating layer 144 of the fourth insulating layer 149, the tenth inorganic insulating layer 154 of the fifth insulating layer 159, and the twelfth inorganic of the sixth insulating layer 169 The insulating layers 164 can be formed of the same material as the second inorganic insulating layer 114, respectively. In addition, the third organic insulating layer 135 of the third insulating layer 139, the fourth organic insulating layer 145 of the fourth insulating layer 149, the fifth organic insulating layer 155 of the fifth insulating layer 159, and the sixth organic of the sixth insulating layer 169. The insulating layers 165 can be formed using the same material as the first organic insulating layer 115, respectively. Similarly to the first insulating layer 119 and the second insulating layer 129, the third to sixth insulating layers (139, 149, 159, 169) are the third to sixth organic insulating layers (135, 145, 155). 165). However, these insulating layers are not necessarily the same as the first inorganic insulating layer 113, the second inorganic insulating layer 114, or the first organic insulating layer 115, and may be appropriately selected depending on the purpose of the insulating layer. it can.

Second Embodiment
FIG. 6A is an enlarged schematic view (sectional view) of the vicinity of the bump 178 of the multilayer wiring structure according to the embodiment. In the present embodiment, a seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170 as in the embodiment of FIG. However, unlike the embodiment of FIG. 3 a, an opening is provided in the seventh organic insulating layer 179, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure including the seventh organic insulating layer 179 has an opening, and the bump 178 is supported by the side wall in the opening.

  According to the present embodiment, the convex portion of the bump 178 on the lower surface of the bump 178 is supported by the side wall of the structure made of the seventh organic insulating layer 179, so that the anchor effect works and the bump 178 is displaced laterally. Can be suppressed. Further, since the film formed by the seventh organic insulating layer 179 can be thick, the side wall supporting the bump 178 can be made higher, and the bump 178 can be laterally displaced or fall down. It can be suppressed more.

  In the embodiment of FIG. 6b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification Example 1 of Second Embodiment>
In FIG. 7 a, as in the embodiment of FIG. 4 a, a seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170. However, unlike the embodiment of FIG. 4 a, an opening is provided in the seventh organic insulating layer 179, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure including the seventh organic insulating layer 179 has an opening, and the bump 178 is supported by the side wall in the opening. Further, unlike the embodiment of FIG. 6 a, a sixteenth conductive layer 174 is disposed above the fifteenth conductive layer 172. The sixteenth conductive layer 174 is a metal different from the fifteenth conductive layer 172. As the sixteenth conductive layer 174, for example, gold (Au), platinum (Pt), or the like can be used.

  According to the present embodiment, the convex portion of the bump 178 on the lower surface of the bump 178 is supported by the side wall of the structure made of the seventh organic insulating layer 179, so that the anchor effect works and the bump 178 is displaced laterally. Can be suppressed. Further, since the film formed by the seventh organic insulating layer 179 can be thick, the side wall supporting the bump 178 can be made higher, and the bump 178 can be laterally displaced or fall down. It can be suppressed more. Further, in the present embodiment, unlike the embodiment of FIG. 6, the surface of the fifteenth conductive layer 172 is oxidized by arranging the sixteenth conductive layer 174 made of Au on the fifteenth conductive layer 172. Thus, wettability with the bump 178 can be improved, and adhesion with the bump 178 can be improved.

  In the embodiment of FIG. 7b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 2 of the second embodiment>
In FIG. 8a, the seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170, as in the embodiment of FIG. 5a. However, unlike the embodiment of FIG. 5 a, an opening is provided in the seventh organic insulating layer 179, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure including the seventh organic insulating layer 179 has an opening, and the bump 178 is supported by the side wall in the opening. Further, in the present embodiment, unlike the embodiment of FIG. 6 a, the sixteenth conductive layer 174 is disposed above the fifteenth conductive layer 172. The sixteenth conductive layer 174 is a metal different from the fifteenth conductive layer 172. As the sixteenth conductive layer 174, for example, gold (Au), platinum (Pt), or the like can be used. In the present embodiment, unlike the embodiment of FIG. 7, the barrier layer 173 is disposed between the fifteenth conductive layer 175 and the sixteenth conductive layer 174.

  According to the present embodiment, as in the embodiment of FIGS. 6 a and 7 a, the bumps 178 on the lower surface of the bumps 178 are supported by the side walls of the structure including the seventh organic insulating layer 179. The anchor effect works, and the bump 178 can be prevented from being laterally shifted or toppled. Further, since the film formed by the seventh organic insulating layer 179 can be thick, the side wall supporting the bump 178 can be made higher, and the bump 178 can be laterally displaced or fall down. It can be suppressed more. On the other hand, in the present embodiment, unlike the embodiment of FIG. 7, the barrier layer 173 is disposed between the fifteenth conductive layer 172 and the sixteenth conductive layer 174, so that the material of the sixteenth conductive layer 174 is the first. The diffusion to the 15 conductive layer 172 can be prevented.

  In the embodiment of FIG. 8b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Third Embodiment>
FIG. 9 a is an enlarged schematic view (cross-sectional view) of the vicinity of the bump 178 of the multilayer wiring structure according to the embodiment. In the present embodiment, the twelfth conductive layer 162 that is a part of the sixth wiring layer 160 is the uppermost layer of the multilayer wiring structure, and the bump 178 is the twelfth conductive layer 162 that is the uppermost layer of the multilayer wiring structure. It is disposed above the sixth insulating layer 169. The sixth insulating layer 169 is provided with an opening, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the sixth insulating layer 169. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the sixth wiring layer 160. The eleventh inorganic insulating layer 163 is fixed to the multilayer wiring structure. The structure including the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, and the sixth organic insulating layer 165 has an opening, and the bump 178 is supported by the side wall in the opening.

  According to the present embodiment, the convex portion of the bump 178 on the lower surface of the bump 178 is supported by the side wall of the structure including the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, and the sixth organic insulating layer 165. As a result, the anchor effect works and the bump 178 can be prevented from being laterally displaced or toppled. Further, the film formed by the eleventh inorganic insulating layer 163 and the twelfth inorganic insulating layer 164 has high rigidity and can support the bumps more firmly. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do.

  In the embodiment of FIGS. 9b and 9c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 1 of 3rd Embodiment>
In FIG. 10a, as in the embodiment of FIG. 9a, the twelfth conductive layer 162 that is a part of the sixth wiring layer 160 is the top layer of the multilayer wiring structure, and the bump 178 is the top layer of the multilayer wiring structure. Are disposed above the twelfth conductive layer 162 and the sixth insulating layer 169. The sixth insulating layer 169 is provided with an opening, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the sixth insulating layer 169. On the other hand, in the present embodiment, unlike the embodiment of FIG. 9 a, the sixth wiring layer 160 includes a thirteenth conductive layer 167. The thirteenth conductive layer 167 is a metal different from the twelfth conductive layer 162. As the thirteenth conductive layer 167, for example, gold (Au), platinum (Pt), or the like can be used.

  According to the present embodiment, similar to the embodiment of FIG. 9 a, the bumps 178 on the lower surface of the bump 178 are protruded from the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, and the sixth organic insulating layer 165. By being supported by the side wall of the structure, the anchor effect works, and the bump 178 can be prevented from being laterally displaced or toppled. Further, the film formed by the eleventh inorganic insulating layer 163 and the twelfth inorganic insulating layer 164 has high rigidity and can support the bumps more firmly. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do. On the other hand, in the present embodiment, unlike the embodiment of FIG. 9A, the 13th conductive layer 167 made of Au is disposed on the 12th conductive layer 162, thereby oxidizing the surface of the 12th conductive layer 162. Thus, wettability with the bump 178 can be improved, and adhesion with the bump 178 can be improved.

  In the embodiment of FIGS. 10b and 10c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bumps 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 2 of 3rd Embodiment>
In FIG. 11a, as in the embodiment of FIGS. 9a and 10a, the twelfth conductive layer 162 that is a part of the sixth wiring layer 160 is the uppermost layer of the multilayer wiring structure, and the bump 178 is the multilayer wiring structure. The uppermost layer is disposed above the twelfth conductive layer 162 and the sixth inorganic insulating layer 169. The sixth insulating layer 169 is provided with an opening, and the bump 178 is disposed in contact with the sixth wiring layer 160 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the sixth insulating layer 169. On the other hand, in the present embodiment, unlike the embodiment of FIG. 9 a, the sixth wiring layer 160 includes a thirteenth conductive layer 167. The thirteenth conductive layer 167 is a metal different from the twelfth conductive layer 162. As the thirteenth conductive layer 167, for example, gold (Au), platinum (Pt), or the like can be used. Further, in the present embodiment, unlike the embodiment of FIG. 10 a, the barrier layer 166 is disposed between the twelfth conductive layer 162 and the thirteenth conductive layer 167.

  According to the present embodiment, as in the embodiment of FIGS. 9a and 10a, the convex portions of the bumps 178 on the lower surface of the bump 178 are formed by the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, and the sixth organic insulating layer. By being supported by the side wall of the structure formed of the layer 165, an anchor effect works, and the bump 178 can be prevented from being laterally shifted or toppled. Further, the film formed by the eleventh inorganic insulating layer 163 and the twelfth inorganic insulating layer 164 has high rigidity and can support the bumps more firmly. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do. On the other hand, in the present embodiment, unlike the embodiment of FIG. 10 a, the barrier layer 166 is disposed between the twelfth conductive layer 162 and the thirteenth conductive layer 167, so that the material of the thirteenth conductive layer 167 is the first. Diffusion to the 12 conductive layers 162 can be prevented.

  In the embodiment of FIGS. 11b and 11c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

<Fourth embodiment>
FIG. 12 a is an enlarged schematic view (cross-sectional view) of the vicinity of the bump 178 of the multilayer wiring structure according to the embodiment. In the present embodiment, as in the embodiment of FIG. 6a, the seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170, and the seventh organic insulating layer 179 has an opening. Is provided. However, in the present embodiment, unlike the embodiment of FIG. 6 a, there is not only the seventh organic insulating layer 179 but also the eighth organic insulating layer 180. Not only the seventh organic insulating layer 179 but also the eighth organic insulating layer 180 is provided with an opening, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179 and the eighth organic insulating layer 180. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure that supports the bumps 178 from the side has a seventh organic insulating layer 179 provided with a first opening and an eighth organic insulating layer 180 provided with a second opening larger than the first opening in plan view. The bump 178 is supported by the side wall of the seventh organic insulating layer 179 in the first opening and the side wall of the eighth organic insulating layer 180 in the second opening. In this embodiment, the structure that supports the bump 178 from the side surface includes the seventh organic insulating layer 179 and the eighth organic insulating layer 180. However, the present invention is not limited to this, and two layers of inorganic insulating layers are used. It may consist of. Also in Modification 1 and Modification 2 of this embodiment below, the structure that supports the bump 178 from the side surface is composed of the seventh organic insulating layer 179 and the eighth organic insulating layer 180. It may consist of two layers.

  According to the present embodiment, unlike the embodiment of FIG. 3a, the bumps 178, which are the lower surfaces of the bumps 178, have the projections on the side walls of the seventh organic insulating layer 179 in the first opening and the eighth in the second opening. By being supported by the side wall of the organic insulating layer 180, a larger anchor effect than that of the embodiment of FIG. 3a works, and the bumps 178 can be prevented from being laterally displaced or toppled. In addition, since the film formed by the seventh organic insulating layer 179 and the eighth organic insulating layer 180 can be thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be placed horizontally. It can suppress more that it slips and falls.

  In the embodiment of FIG. 12b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 1 of 4th Embodiment>
In FIG. 13a, as in the embodiment of FIGS. 7a and 12a, a seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170. Is provided with an opening. However, in the present embodiment, unlike the embodiment of FIG. 7 a, not only the seventh organic insulating layer 179 but also the eighth organic insulating layer 180 is provided with openings, and the bumps 178 are formed in the openings in the openings. 7 are arranged in contact with the wiring layer 170. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179 and the eighth organic insulating layer 180. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure that supports the bumps 178 from the side has a seventh organic insulating layer 179 provided with a first opening and an eighth organic insulating layer 180 provided with a second opening larger than the first opening in plan view. The bump 178 is supported by the side wall of the seventh organic insulating layer 179 in the first opening and the side wall of the eighth organic insulating layer 180 in the second opening. In the present embodiment, unlike the embodiment of FIG. 12 a, the seventh wiring layer 170 includes a sixteenth conductive layer 174. The sixteenth conductive layer 174 is a metal different from the fifteenth conductive layer 172. As the sixteenth conductive layer 174, for example, gold (Au), platinum (Pt), or the like can be used.

  According to the present embodiment, unlike the embodiment of FIG. 7a, the convex portions of the bump 178 on the lower surface of the bump 178 have the sidewalls of the seventh organic insulating layer 179 in the first opening and the eighth in the second opening. By being supported by the side wall of the organic insulating layer 180, a larger anchor effect than in the embodiment of FIG. 7a works, and the bump 178 can be prevented from being laterally shifted or toppled. In addition, since the film formed by the seventh organic insulating layer 179 and the eighth organic insulating layer 180 can be thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be placed horizontally. It can suppress more that it slips and falls. On the other hand, in the present embodiment, unlike the embodiment of FIG. 12A, the 16th conductive layer 174 made of Au is disposed on the 15th conductive layer 172, thereby oxidizing the surface of the 15th conductive layer 172. Thus, wettability with the bump 178 can be improved, and adhesion with the bump 178 can be improved.

  In the embodiment of FIG. 13b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 2 of 4th Embodiment>
In FIG. 14a, as in the embodiment of FIGS. 8a, 12a and 13a, a seventh organic insulating layer 179 is disposed on the sixth insulating layer 169 and the seventh wiring layer 170. The layer 179 is provided with an opening. However, in the present embodiment, unlike the embodiment of FIG. 8 a, not only the seventh organic insulating layer 179 but also the eighth organic insulating layer 180 is provided. Not only the seventh organic insulating layer 179 but also the eighth organic insulating layer 180 is provided with an opening, and the bump 178 is disposed in contact with the seventh wiring layer 170 in the opening. In other words, the convex portion of the bump 178 on the lower surface of the bump 178 is fitted in the opening provided in the seventh organic insulating layer 179 and the eighth organic insulating layer 180. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the seventh wiring layer 170. The seventh organic insulating layer 179 is fixed to the multilayer wiring structure. The structure that supports the bumps 178 from the side has a seventh organic insulating layer 179 provided with a first opening and an eighth organic insulating layer 180 provided with a second opening larger than the first opening in plan view. The bump 178 is supported by the side wall of the seventh organic insulating layer 179 in the first opening and the side wall of the eighth organic insulating layer 180 in the second opening. In the present embodiment, unlike the embodiment of FIG. 12 a, the seventh wiring layer 170 includes a sixteenth conductive layer 174. The sixteenth conductive layer 174 is a metal different from the fifteenth conductive layer 172. As the sixteenth conductive layer 174, for example, gold (Au), platinum (Pt), or the like can be used. In the present embodiment, unlike the embodiment of FIG. 13, the barrier layer 173 is disposed between the fifteenth conductive layer 172 and the sixteenth conductive layer 174.

  According to the present embodiment, unlike the embodiment of FIG. 8 a, the bumps 178 on the lower surface of the bump 178 have the protrusions on the side walls of the seventh organic insulating layer 179 in the first opening and the eighth in the second opening. By being supported by the side wall of the organic insulating layer 180, a larger anchoring effect than that of the embodiment of FIG. 8a works, and the bump 178 can be prevented from being laterally shifted or toppled. In addition, since the film formed by the seventh organic insulating layer 179 and the eighth organic insulating layer 180 can be thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be placed horizontally. It can suppress more that it slips and falls. On the other hand, in the present embodiment, unlike the embodiment of FIG. 13a, the barrier layer 173 is disposed between the fifteenth conductive layer 172 and the sixteenth conductive layer 174, so that the material of the sixteenth conductive layer 174 is changed. Diffusion to the fifteenth conductive layer 172 can be prevented.

  In the embodiment of FIG. 14b, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. This improves the durability of the bump 178. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIG. 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Fifth Embodiment>
FIG. 15A is an enlarged schematic view (cross-sectional view) of the vicinity of the bump 178 of the multilayer wiring structure according to the embodiment. In the present embodiment, as in the embodiment of FIG. 9a, the twelfth conductive layer 162 that is a part of the sixth wiring layer 160 is the uppermost layer of the multilayer wiring structure, and the bumps 178 are the uppermost layers of the multilayer wiring structure. It is disposed above the twelfth conductive layer 162 and the sixth insulating layer 169 which are upper layers. The sixth insulating layer 169 is provided with an opening. On the other hand, in this embodiment, unlike the embodiment of FIG. 9a, not only the sixth insulating layer 169 but also the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180 are provided with openings, Bumps 178 are disposed in contact with the sixth wiring layer 160 in the openings of the insulating layer 169 and the openings of the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180. In other words, the bump 178 convex portion on the lower surface of the bump 178 has an opening provided in the sixth insulating layer 169 and a thirteenth inorganic insulation larger in plan view than the opening provided in the sixth insulating layer 169. The layer 176 and the opening provided in the fourteenth inorganic insulating layer 177 are fitted. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the sixth wiring layer 160. The eleventh inorganic insulating layer 163 is fixed to the multilayer wiring structure. The structure that supports the bump 178 from the side includes a sixth insulating layer 169 provided with a first opening, a thirteenth inorganic insulating layer 176 provided with a second opening larger than the first opening in plan view, and The bump 178 is supported by the side wall of the thirteenth inorganic insulating layer 176 in the first opening and the side wall of the fourteenth inorganic insulating layer 177 in the second opening.

  According to the present embodiment, unlike the embodiment of FIG. 9a, the protrusions on the lower surface of the bump 178 have the sidewalls of the sixth insulating layer 169 in the first opening and the thirteenth inorganic insulating layer 176 in the second opening. And by being supported by the side wall of the fourteenth inorganic insulating layer 177, a larger anchor effect than that of the embodiment of FIG. 9a works, and the bump 178 can be prevented from being laterally displaced or toppled. Further, the film formed by the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, the thirteenth inorganic insulating layer 176, and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bump 178 more firmly. it can. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do.

  In the embodiment of FIGS. 15b and 15c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bumps 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 1 of 5th Embodiment>
In FIG. 16a, as in the embodiment of FIGS. 10a and 15a, the twelfth conductive layer 162 that is a part of the sixth wiring layer 160 is the uppermost layer of the multilayer wiring structure, and the bump 178 is the multilayer wiring structure. The uppermost layer is disposed above the twelfth conductive layer 162 and the sixth insulating layer 169. The sixth insulating layer 169 is provided with an opening. On the other hand, in the present embodiment, unlike the embodiment of FIG. 10a, not only the sixth insulating layer 169 but also the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180 are provided with openings. Bumps 178 are disposed in contact with the sixth wiring layer 160 in the openings of the insulating layer 169 and the openings of the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180. In other words, the bump 178 convex portion on the lower surface of the bump 178 has an opening provided in the sixth insulating layer 169 and a thirteenth inorganic insulation larger in plan view than the opening provided in the sixth insulating layer 169. The layer 176 and the opening provided in the fourteenth inorganic insulating layer 177 are fitted. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the sixth wiring layer 160. The eleventh inorganic insulating layer 163 is fixed to the multilayer wiring structure. The structure that supports the bump 178 from the side includes a sixth insulating layer 169 provided with a first opening, a thirteenth inorganic insulating layer 176 provided with a second opening larger than the first opening in plan view, and The bump 178 is supported by the side wall of the thirteenth inorganic insulating layer 176 in the first opening and the side wall of the fourteenth inorganic insulating layer 177 in the second opening. In the present embodiment, unlike the embodiment of FIG. 15 a, the sixth wiring layer 160 includes a thirteenth conductive layer 167. The thirteenth conductive layer 167 is a metal different from the twelfth conductive layer 162. As the thirteenth conductive layer 167, for example, gold (Au), platinum (Pt), or the like can be used.

  According to the present embodiment, unlike the embodiment of FIG. 10a, the bumps 178 on the lower surface of the bump 178 have the protrusions on the side walls of the sixth insulating layer 169 in the first opening and the thirteenth in the second opening. By being supported by the side walls of the inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177, an anchor effect larger than that of the embodiment of FIG. 10a works, and the bump 178 is prevented from being laterally shifted or toppled. Can do. Further, the film formed by the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, the thirteenth inorganic insulating layer 176, and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bump 178 more firmly. it can. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do. On the other hand, in the present embodiment, unlike the embodiment of FIG. 15A, the 13th conductive layer 167 made of Au is disposed on the 12th conductive layer 162, thereby oxidizing the surface of the 12th conductive layer 162. Thus, wettability with the bump 178 can be improved, and adhesion with the bump 178 can be improved.

  In the embodiment of FIGS. 16b and 16c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bumps 178 from the side surface. The improvement, the height of the bump 178, and the diameter of the seventh organic insulating layer 179 are the same as those in the embodiment of FIGS. 3b and 3c. Therefore, the detailed description regarding these is abbreviate | omitted.

<Modification 2 of Fifth Embodiment>
In FIG. 17a, as in the embodiment of FIGS. 11a, 15a and 16a, the twelfth conductive layer 162 which is a part of the sixth wiring layer 160 is the uppermost layer of the multilayer wiring structure, and the bump 178 is a multilayer It is disposed above the twelfth conductive layer 162 and the sixth insulating layer 169 which are the uppermost layers of the wiring structure. The sixth insulating layer 169 is provided with an opening. On the other hand, in the present embodiment, unlike the embodiment of FIG. 11a, not only the sixth insulating layer 169 but also the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180 are provided with openings. Bumps 178 are disposed in contact with the sixth wiring layer 160 in the openings of the insulating layer 169 and the openings of the thirteenth inorganic insulating layer 179 and the fourteenth inorganic insulating layer 180. In other words, the bump 178 convex portion on the lower surface of the bump 178 has an opening provided in the sixth insulating layer 169 and a thirteenth inorganic insulation larger in plan view than the opening provided in the sixth insulating layer 169. The layer 176 and the opening provided in the fourteenth inorganic insulating layer 177 are fitted. In other words, the bump 178 is disposed above the multilayer wiring structure and is electrically connected to the sixth wiring layer 160. The eleventh inorganic insulating layer 163 is fixed to the multilayer wiring structure. The structure that supports the bump 178 from the side includes a sixth insulating layer 169 provided with a first opening, a thirteenth inorganic insulating layer 176 provided with a second opening larger than the first opening in plan view, and The bump 178 is supported by the side wall of the thirteenth inorganic insulating layer 176 in the first opening and the side wall of the fourteenth inorganic insulating layer 177 in the second opening. In the present embodiment, unlike the embodiment of FIG. 15 a, the sixth wiring layer 160 includes a thirteenth conductive layer 167. The thirteenth conductive layer 167 is a metal different from the twelfth conductive layer 162. As the thirteenth conductive layer 167, for example, gold (Au), platinum (Pt), or the like can be used. Furthermore, in the present embodiment, unlike the embodiment of FIG. 16 a, the barrier layer 163 is disposed between the twelfth conductive layer 162 and the thirteenth conductive layer 167.

  According to the present embodiment, unlike the embodiment of FIG. 11 a, the bumps 178 on the lower surface of the bump 178 have the projections on the side walls of the sixth insulating layer 169 in the first opening and the thirteenth in the second opening. By being supported by the side walls of the inorganic insulating layer 176 and the fourteenth inorganic insulating layer 177, a larger anchor effect than that of the embodiment of FIG. 11a works, and the bump 178 is prevented from being laterally shifted or toppled. Can do. Further, the film formed by the eleventh inorganic insulating layer 163, the twelfth inorganic insulating layer 164, the thirteenth inorganic insulating layer 176, and the fourteenth inorganic insulating layer 177 has high rigidity and can support the bump 178 more firmly. it can. Since the film formed by the sixth organic insulating layer 165 can be made thick, the side walls supporting the bumps 178 can be made higher, and the bumps 178 can be further prevented from being laterally displaced or toppled. can do. On the other hand, in the present embodiment, unlike the embodiment of FIG. 16a, the barrier layer 163 is disposed between the twelfth conductive layer 162 and the thirteenth conductive layer 167, so that the material of the thirteenth conductive layer 167 is changed. Diffusion to the twelfth conductive layer 162 can be prevented.

  In the embodiment of FIGS. 17b and 17c, the seventh organic insulating layer 179 is disposed above the sixth organic insulating layer 165 and supports the bump 178 from the side surface. The height of the bump 178 and the diameter of the seventh organic insulating layer 179 are the same as those of the embodiment of FIGS. 3b and 3c, respectively. Therefore, the detailed description regarding these is abbreviate | omitted.

DESCRIPTION OF SYMBOLS 100: Substrate 101: Underlayer 110: 1st wiring layer 111: 1st conductive layer 112: 2nd conductive layer 113: 1st inorganic insulating layer 114: 2nd inorganic insulating layer 115: 1st organic insulating layer 119: 1st Insulating layer 120: second wiring layer 121: third conductive layer 122: fourth conductive layer 123: third inorganic insulating layer 124: fourth inorganic insulating layer 125: second organic insulating layer 129: second insulating layer 130: first 3 wiring layers 131: fifth conductive layer 132: sixth conductive layer 133: fifth inorganic insulating layer 134: sixth inorganic insulating layer 135: third organic insulating layer 139: third insulating layer 140: fourth wiring layer 141: Seventh conductive layer 142: Eighth conductive layer 143: Seventh inorganic insulating layer 144: Eighth inorganic insulating layer 145: Fourth organic insulating layer 149: Fourth insulating layer 150: Fifth wiring layer 151: Ninth conductive layer 152 : 10th conductive layer 153: 9th inorganic Edge layer 154: Tenth inorganic insulating layer 155: Fifth organic insulating layer 159: Fifth insulating layer 160: Sixth wiring layer 161: Eleventh conductive layer 162: Twelfth conductive layer 163: Eleventh inorganic insulating layer 164: Tenth 12 Inorganic insulating layer 165: Sixth organic insulating layer 166: Barrier layer 167: Thirteenth conductive layer 169: Sixth insulating layer 170: Seventh wiring layer 171: Fourteenth conductive layer 172: Fifteenth conductive layer 173: Barrier layer 174 : 16th conductive layer 176: 13th inorganic insulating layer 177: 14th inorganic insulating layer 178, 188: Bump 179: 7th organic insulating layer 180: 8th organic insulating layer 181, 182, 183, 184, 185, 186: Opening 191: First via 192: Second via 193: Third via
194: 4th via 195: 5th via 196: 6th via

Claims (12)

  1. A multilayer wiring structure in which a plurality of wiring layers are laminated;
    A bump disposed above the multilayer wiring structure, including a resin, and electrically connected to any one of the plurality of wiring layers;
    A multilayer wiring structure comprising: a structure that is fixed to the multilayer wiring structure and supports the bump from a side surface.
  2. The structure has a thin film provided with an opening,
    The multilayer wiring structure according to claim 1, wherein the bump is supported by a side wall of the thin film in the opening.
  3.   The multilayer wiring structure according to claim 2, wherein the thin film is an inorganic insulating layer.
  4.   The multilayer wiring structure according to claim 2, wherein the thin film is an organic insulating layer.
  5.   The multilayer wiring structure according to claim 2, wherein the thin film includes a laminate of an inorganic insulating layer and an organic insulating layer.
  6. The structure includes a first thin film provided with a first opening, and a second thin film provided with a second opening larger than the first opening in plan view,
    The bump is supported by the first side wall of the first thin film in the first opening and the second side wall of the second thin film in the second opening. Multilayer wiring structure.
  7.   The multilayer wiring structure according to claim 6, wherein the first thin film and the second thin film are organic insulating layers.
  8. The first thin film includes a laminate of an inorganic insulating layer and an organic insulating layer,
    The multilayer wiring structure according to claim 6, wherein the second thin film is an inorganic insulating layer.
  9.   The wiring layer includes a first conductive layer, a barrier layer positioned above the first conductive layer, and a second conductive layer positioned above the barrier layer. The multilayer wiring structure according to any one of 8.
  10.   The multilayer wiring structure according to claim 9, wherein the second conductive layer is made of a material containing gold.
  11.   The multilayer wiring structure according to claim 1, further comprising a third insulating layer disposed above the multilayer wiring structure and supporting the bump from a side surface.
  12.   The multilayer wiring structure according to claim 11, wherein an upper surface of the third insulating layer is higher than an upper surface of the bump.
JP2015063319A 2015-03-25 2015-03-25 Multilayer wiring structural body Pending JP2016184620A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574857A (en) * 1991-09-11 1993-03-26 Akita Denshi Kk Semiconductor device
JP2000195887A (en) * 1998-12-25 2000-07-14 Sanyo Electric Co Ltd Electronic component
JP2005503020A (en) * 2001-09-12 2005-01-27 ダウ コーニング コーポレーション Semiconductor device with compliant electrical terminal, apparatus including semiconductor device, and manufacturing method thereof
JP2008135518A (en) * 2006-11-28 2008-06-12 Matsushita Electric Ind Co Ltd Electronic component mounting structure and method for manufacturing the structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574857A (en) * 1991-09-11 1993-03-26 Akita Denshi Kk Semiconductor device
JP2000195887A (en) * 1998-12-25 2000-07-14 Sanyo Electric Co Ltd Electronic component
JP2005503020A (en) * 2001-09-12 2005-01-27 ダウ コーニング コーポレーション Semiconductor device with compliant electrical terminal, apparatus including semiconductor device, and manufacturing method thereof
JP2008135518A (en) * 2006-11-28 2008-06-12 Matsushita Electric Ind Co Ltd Electronic component mounting structure and method for manufacturing the structure

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